WO2013023493A1

WO2013023493A1 - Ito through hole capacitive touch screen and manufacturing method therefor

Info

Publication number: WO2013023493A1
Application number: PCT/CN2012/077366
Authority: WO
Inventors: 曹晓星; 李晗
Original assignee: 深圳市宝明科技股份有限公司
Priority date: 2011-08-16
Filing date: 2012-06-21
Publication date: 2013-02-21
Also published as: CN102289334B; CN102289334A

Abstract

Disclosed are an ITO through hole capacitive touch screen and a manufacturing method therefor. The ITO through hole capacitive touch screen comprises a decorative glass substrate, a capacitive functional substrate stacked on the decorative glass substrate via an optical glue, and, sequentially stacked on the capacitive functional substrate, an ITO electrode, a first insulation layer, an ITO through hole electrode, a metal electrode, and a second insulation layer. The ITO electrode comprises a capacitive screen driver (ITO electrode 1) and a sensing electrode (ITO electrode 2), and is provided with a patterned graphic design. ITO electrode 1 and ITO electrode 2 are on a same layer, and are mutually independent, mutually insulated, and vertical in design. The present invention uses for the capacitive touch screen the stacked structure and an ITO conduction scheme to perform a logical design, and employs the ITO through hole scheme to conduct up and down the ITO signal electrodes, thus allowing for the capacitive touch screen effectively improved transmittance, operational stability, and sensitivity to touch.

Description

ITO through-hole capacitance touch screen and manufacturing method thereof

The present invention relates to the field of capacitive touch screen technologies, and in particular, to a capacitive touch screen designed through a ΙΤ0 through hole and a method of fabricating the same. Background technique

With the development of electronic technology, keyboards or mice for mobile phones, digital cameras, handheld game consoles, car DVDs, MP3s, instrumentation, etc. are gradually being replaced by touch screens. The products of touch screens were not very hot a few years ago, and with the increasing contact with touch screen products, they have been recognized by more people in the past two years, and the speed of development has gradually accelerated. The rapid growth of the touch screen has not only stimulated more intense industry competition, but also indirectly promoted the development of technology. Its multi-touch operation method has increased the influence of touch screen products to a new height, and has gradually been adopted by people. Concerned.

The touch screen is mainly composed of a touch detecting component and a touch screen controller. The touch detecting component is installed in front of the display screen for detecting the touch position of the user, and is sent to the touch screen controller after receiving; and the main function of the touch screen controller is to receive from the touch point detecting device. Touch the information, convert it to the contact coordinates, and send it to the CPU. It can also receive commands from the CPU and execute them.

According to the working principle of the touch screen and the medium for transmitting information, the touch screen can be divided into four types: resistive type, capacitive sensing type, infrared type and surface acoustic wave type. Currently, a resistive touch screen is widely used, which uses pressure sensing. Resistively controlled; Resistive touch screen is a multi-layer composite film, the main part of which is a resistive film screen that fits perfectly with the display surface. The resistive film screen is a layer of glass or hard plastic plate as a base layer coated with a transparent oxidized metal (transparent conductive resistor) ITO (Indium Tin Oxide) conductive layer, which is covered with an outer surface hardened smooth anti-scratch The plastic layer, its inner surface is also coated with an ITO coating, there are many small between them (less than 1 / 1000) The transparent isolation point of the inch separates the two conductive layers from each other. When the finger touches the screen, the two conductive layers have contact at the touch point, the resistance changes, and signals are generated in both X and Y directions. Sending the touch screen controller, the controller detects this contact and calculates the position of (X, Y), and then operates according to the way of simulating the mouse.

The basic principle of the capacitive touch screen is to use the current sensing of the human body. The capacitive touch screen is a two-layer composite glass screen, and the inner surface of the glass screen is coated with ιτο.

(Indium Tin Oxide) conductive film (coated conductive glass), the outermost layer is a thin layer of bauxite glass protective layer, ITO coating as the working surface, four electrodes are led out at the four corners, when the finger touches the screen, Due to the human body electric field, the user and the touch screen surface form a coupling capacitor. For high-frequency current, the capacitor is a direct conductor, so the finger sucks a small current from the contact point, and this current flows out from the electrodes on the four corners of the touch screen. And the current flowing through the four electrodes is proportional to the distance from the finger to the four corners. The controller calculates the position of the touch point by accurately calculating the ratio of the four currents.

In the capacitive touch screen, the projected capacitive touch screen is a widely used one, which has the characteristics of simple structure and high light transmittance. The touch sensing component of the projected capacitive touch screen generally has a plurality of row electrodes and column electrodes staggered to form an inductive matrix. The commonly used design method includes disposing the row electrode and the column electrode on both sides of the same transparent substrate to prevent short circuit at the staggered position; or disposing the row electrode and the column electrode on the same side of the same transparent substrate to form the same conductive film ( Generally, it is an ITO conductive film), and the row electrode and the column electrode are separated by an insulating layer and a conductive bridge is disposed at a position where the row electrode and the column electrode are staggered, and the row electrode and the column electrode are separated to ensure conduction in respective directions, which is effective. Prevent it from shorting in the staggered position.

A commonly adopted design is: one of the row electrodes or the column electrodes is continuously disposed on the conductive film, and the other electrode is disposed on the conductive film at intervals of electrodes arranged in a plurality of electrode blocks, and the conductive bridge is disposed at the position of the staggered point. The adjacent electrode blocks are electrically connected to form a continuous electrode in the other direction; the conductive bridge is separated from the continuously disposed electrodes by an insulating layer, thereby effectively preventing the row electrode and the column electrode from being short-circuited at the staggered point. Usually used The plan is: (1) the laminated structure is a transparent substrate, a first direction electrode, an insulating layer, and a conductive bridge; or (2) the laminated structure is a transparent substrate, a conductive bridge, an insulating layer, and a first direction electrode.

However, the capacitive touch screen adopting the traditional design scheme may have the defects of low light transmittance and poor working stability. The transmittance of the capacitive touch screen of the conventional design scheme is difficult to break through 80%, and the whole force is bent and deformed easily. Separation occurs at the interface, causing the electrode to open the touch to fail and the touch sensing component to be damaged. Summary of the invention

One of the objectives of the present invention is to provide a ιτο through-hole capacitive touch screen. By rationally designing the laminated structure of the capacitive touch screen and the ITO conduction mode, the ITO signal electrode is electrically connected up and down by means of an ITO through hole, thereby effectively increasing the capacitance. Light transmittance, work stability and touch sensitivity of the touch screen.

To achieve the above object, the present invention adopts the following technical solutions:

An ITO through-hole capacitive touch screen, including

The invention comprises a decorative glass substrate (cover glass), a capacitor functional substrate laminated on the decorative glass substrate by optical glue, and an ITO electrode, a first insulating layer, an ITO via electrode, a metal electrode and a second layer which are sequentially laminated on the capacitor functional substrate. The ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed .

Preferably, the capacitive functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; the decorative glass substrate has a thickness of 0.5 to 2.0 mm of a chemically strengthened glass substrate; and the capacitive functional substrate is made of borosilicate or sodium calcium. The number of the through holes of the through hole electrode may be one or several, and the through hole electrode has a circular hole, an elliptical hole, a triangular hole, a trapezoidal hole, or a rectangular hole;

The ITO electrode layer has a thickness of 50 to 2000 angstroms (face resistance is 10 to 430 ohms); The thickness of the first insulating layer is 0.5~3um _; the thickness of the IT0 via electrode is 50 angstroms to 2000 angstroms (the surface resistance is 10~430 ohms); the thickness of the metal electrode layer is 500~4000 angstroms; The thickness of the second insulating layer is 0.5~3um.

The metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. The mass ratio of Mo and Nb in the MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in the AlNd alloy material is 95~98: 2-5 The first insulating layer makes the ITO electrode and the ITO through hole The electrodes are in an insulated condition and do not conduct each other. The ITO via electrode acts as an ITO turn-on, turns on the capacitive screen drive or senses the line electrode, and has a regular pattern structure. The flexible circuit board bonding area where the electrode signal is turned on is realized by the metal electrode. The second insulating layer protects the metal electrode from the ITO wire to insulate it from the air.

A second object of the present invention is to provide a method for manufacturing a ιτο through-hole capacitive touch screen, which adopts the following technical solutions:

Formation of ITO electrodes:

The capacitive functional substrate is chemically strengthened, and then ITO coated to form a transparent and uniform thickness ITO film layer on the capacitive functional substrate, the thickness of which is 50 angstroms to 2000 angstroms (the surface resistance is 10 to 430 ohms);

The ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um;

The photoresist is pre-baked, exposed, developed, etched, and stripped to a final thickness of 50-2000 angstroms (face resistance of 10 to 430 ohms) and regular ITO patterns or electrodes.

The ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.

Formation of the first insulating layer:

The transparent substrate after passing through the ITO bridge electrode is coated with a thickness on the surface of the ITO film. Uniform negative photoresist material, photoresist coating thickness is 0.5um~3um;

The photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.

The pattern opening and quantity of the pattern is the position of the ITO through hole, and the pattern has a regular pattern, which is a circular opening, an elliptical opening, a triangular opening, a trapezoidal opening, a rectangular opening, and the like.

Formation of ITO via electrode layer:

Forming a transparent substrate of the first insulating layer, and again performing ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, the thickness of which is 50 angstroms to 2000 angstroms;

The photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular ITO pattern or electrode having a thickness of 50-2000 Å.

The ITO through-hole electrode has a regular pattern structure, and the number of the through holes may be one or several, and the through-hole electrode method has a circular punching, an elliptical punching, a triangular punching, a trapezoidal punching, a rectangular, etc. Hole mode, the purpose is to make the ITO via electrode and the ITO electrode (including ITO electrode 1 and ITO electrode 2) more stable and more reliable. The through hole is opened on the first insulating layer (the position where the ITO through hole is required).

ITO via electrode conduction mode: ITO electrode 1 is electrically connected upward through the via electrode of the first insulating layer, horizontally connected through the ITO via electrode on the first insulating layer, and then through the via electrode of the first insulating layer The lower electrode is connected to the ITO electrode 1, and the ITO electrode 1 is formed into a capacitive screen driving path. The ITO electrode 2 is directly formed on the glass substrate, and the single ITO electrodes are connected to each other to directly conduct.

Formation of the metal electrode layer:

The transparent substrate forming the ITO electrode layer is subjected to a metal plating film to form a metal film layer having a uniform thickness on the transparent substrate, and has a thickness of 500 angstroms to 4000 angstroms. The metal-coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the metal surface, and the photoresist coating thickness is lum~5um;

The photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular metal pattern or electrode having a thickness of 500-4000 angstroms.

Formation of the second insulating layer:

After passing through the transparent substrate of the metal electrode, a thin layer of negative photoresist material is coated on the surface of the metal film, and the thickness of the photoresist coating is 0.5 um~3 um;

Preferably, the capacitive functional substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm;

The ITO comprises In203 and Sn02, and the mass ratio thereof is 85~95: 5~15.

The ITO coating method can be vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, or sol gel.

The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and photosensitive material; the main components of the negative photoresist material are cyclohexanone, acrylic resin, epoxy resin and photosensitive material.

Coating photoresist materials are by roller coating, spin coating, and scraping.

The metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. Among them, the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2-5

Metal material selection can also be composed of silver alloy or copper alloy, and the components are combined in a certain proportion. The metal coating is vacuum magnetron sputtering.

Compared with the prior art, the present invention has the following advantages and beneficial effects:

The invention optimizes the laminated structure by rationally setting the laminated structure, and is designed as an ITO through-hole conducting electrode layer, thereby greatly improving the yield of the product and reducing the cost. Improve product reliability. Through reasonable design of each layer, the transmittance can reach more than 90%. DRAWINGS

1 is a schematic structural view of an ITO through-hole capacitive touch screen according to the present invention;

2 is a schematic view showing a partial enlarged structure of an ITO through hole;

Figure 3 is a schematic cross-sectional view of the ITO via. detailed description

The present invention will be further described in detail below in conjunction with specific embodiments.

As shown in FIG. 1 , the ITO through-hole capacitive touch screen comprises a chemically-reinforced decorative glass substrate 11 having a thickness of 0.5 to 2.0 mm, and a capacitor functional substrate 13 laminated on the decorative glass substrate through an optical adhesive layer 12, and has a thickness of 0.33 to 0.7 mm, and an ITO electrode 14, a first insulating layer 15, an ITO via electrode 16, a metal electrode 17, and a second insulating layer 18 which are sequentially laminated on a capacitor functional substrate; the ITO electrode includes a capacitive screen drive (ITO) The electrode 1) and the sensing electrode (ITO electrode 2) have a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.

FIG. 2 and FIG. 3 are schematic diagrams showing a partial structure or a cross-sectional structure of the ITO through-hole capacitive touch screen according to the embodiment: The first insulating layer 35 is insulated from the ITO via electrode 36 and is not electrically connected to each other. The ITO electrode includes a capacitive screen drive (ITO electrode 1) 32 and a sensing electrode (ITO electrode 2) 33. The ITO via electrode 36 serves as an ITO conduction function, turns on the capacitive screen drive or senses the line electrode, and has a regular pattern structure. The flexible circuit board area where the ITO electrode signal is turned on is realized by the metal electrode. The second insulating layer 34 protects the metal electrode from the ITO wire to insulate it from the air.

The preparation process is as follows:

Formation of ITO electrodes:

The capacitor functional substrate 31 is chemically strengthened, and then subjected to ITO coating to make the capacitor The functional substrate (functional sheet, which is a conductive glass) is formed with a transparent and uniform thickness of ιτο film layer having a thickness of 50 angstroms to 2000 angstroms; the ITO material is composed of In203 and Sn02, and the mass ratio is 85-95. : 5~15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.

The ITO coated transparent glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um; the main component of the positive photoresist material is propylene glycol monomethyl ether acetate. , epoxy resin and photosensitive materials. The photoresist coating thickness is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping.

After the above process, the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a regular ITO pattern or electrode having a thickness of 50 to 2000 angstroms. The pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from lOOmj to 500mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. The ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.

Formation of the first insulating layer:

A transparent glass substrate after passing through the ITO electrode is coated with a uniform thickness of a negative photoresist material on the surface of the ITO film. The main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and Negative light agent (trade name: Taiwan Daxing Company produces POC A46), photoresist coating thickness is 0.5um~3um; coating photoresist material has spin coating, scraping and other methods.

The pattern opening and quantity of the pattern is the position of the ITO through hole, and the pattern has a regular pattern, which is a circular opening, an elliptical opening, a triangular opening, a trapezoidal opening, and a rectangular shape. Opening holes, etc.

After the above process, the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. After hard baking through the insulating layer, the condition is 200 to 300 degrees, and the time is from half an hour to 3 hours. After the above process, a first insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.

Formation of ITO via electrode layer:

The transparent glass substrate forming the first insulating layer is again subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, and the thickness thereof is 50 angstroms to 2000 angstroms (the surface resistance is 10 430 ohms). The ITO material consists of In203 and Sn02 with a mass ratio of 85~95: 5~15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.

The ITO coated glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO. The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent (product) It is called TR400 produced by Taiwan New Materials Co., Ltd.; the thickness of photoresist coating is lum~5um. Coating photoresist materials are by roller coating, spin coating, and blade coating.

After the above process, the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ITO pattern or electrode. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. The ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees. The de-filming solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees. industry.

The ITO through-hole electrode has a regular pattern structure, and the number of the through holes may be one or several, and the through-hole electrode method has a circular punching, an elliptical punching, a triangular punching, a trapezoidal punching, a rectangular, etc. Hole mode, the purpose is to make the contact between the ΙΤΟ through hole electrode and the ΙΤΟ electrode (including ΙΤΟ electrode 1 and ΙΤΟ electrode 2) more stable and more reliable. The through hole is opened on the first insulating layer (the position where the through hole is required).

ΙΤΟthrough hole electrode conduction mode: the ΙΤΟ electrode 1 is electrically connected upward through the through hole electrode of the first insulating layer, horizontally connected through the ΙΤΟ through hole electrode on the first insulating layer, and then through the through hole electrode of the first insulating layer The lower electrode is connected to the germanium electrode 1, so that the germanium electrode 1 forms a capacitive screen drive path. The tantalum electrode 2 is directly formed on the glass substrate, and a single tantalum electrode is connected and directly turned on.

Formation of the metal electrode layer:

The glass substrate forming the through-hole electrode layer is further subjected to metal plating to form a metal film layer having a uniform thickness on the glass substrate, and has a thickness of 500 angstroms to 4000 angstroms. The metal film layer material is a sandwich structure composed of MoNb, AlNd, MoNb, and the thickness is matched in a certain proportion. The mass ratio of Mo and Nb in the MoNb alloy material is 90:10, and the mass ratio of A1 and Nd in the AlNd alloy material is 97: 3. The selection of the metal material can also be composed of a silver alloy or a copper alloy, and the components are combined in a certain ratio. The metal coating is a vacuum-magnetized metal-coated glass substrate coated with a uniform thickness of positive photoresist material on the metal surface. The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and Positive light agent; photoresist coating thickness is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping. After the above process, the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 500-4000 angstroms and a regular metal pattern or electrode. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. Metal etching solution using phosphoric acid, vinegar A chemical solution in which acid and nitric acid are mixed in a certain ratio, and the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.

Formation of the second insulating layer:

The glass substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film. The main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and negative Sexy light agent; photoresist coating thickness is 0.5um~3um. The photoresist material is applied by spin coating or scraping.

After the above process, the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. After hard baking through the insulating layer, the condition is 200 to 300 degrees, and the time is 0.5 hours to 3 hours. After the above process, a second insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.

The above is a further detailed description of the present invention in connection with the specific preferred embodiments, and the specific embodiments of the present invention are not limited to the description. It will be apparent to those skilled in the art that the present invention may be practiced without departing from the spirit and scope of the invention.

Claims

Claim

1. A lTO through-hole capacitive touch screen comprising a decorative glass substrate, a capacitive functional substrate laminated on the decorative substrate by optical glue, and an ITO electrode, a first insulating layer, an ITO via electrode, and a metal laminated on the capacitive functional substrate in this order. The electrode and the second insulating layer; the ITO electrode comprises a capacitive screen driving and sensing electrode, having a regular pattern structure; the capacitive screen driving and the sensing electrode are on the same level, independent of each other, insulated from each other, and vertically designed.

2. The ITO through-hole capacitive touch screen according to claim 1, wherein: said capacitive functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; and said decorative glass substrate has a thickness of 0.5 to 2.0 mm. The chemically strengthened glass substrate; the number of the through holes of the ITO through hole electrode may be one or several, and the through hole electrode has a circular hole, an elliptical hole, a triangular hole, a trapezoidal hole, or a rectangular shape. hole.

The ITO through-hole capacitive touch screen of claim 2, wherein: the ITO electrode layer has a thickness of 50 to 2000 angstroms; the first insulating layer has a thickness of 0.5 to 3 um _{; and} the ITO via electrode The thickness is 50 angstroms to 2000 angstroms; the thickness of the metal electrode layer is 500-4000 angstroms; and the thickness of the second insulating layer is 0.5-3 um.

4. The ITO through-hole capacitive touch screen according to claim 3, wherein: the metallized metal film layer is a sandwich structure of MoNb, AlNd, MoNb, and has a thickness of 50 angstroms to 500 angstroms. : 500 angstroms to 3000 angstroms: 50 angstroms to 500 angstroms, the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~ 98: 2-5

The ITO through-hole capacitive touch screen according to claim 4, wherein the ITO comprises In203 and Sn02, and the mass ratio is 85~95: 5~15.

6. A method of preparing an ITO through-hole capacitive touch screen, comprising the steps of:

Formation of ITO electrodes:

The capacitor functional substrate glass is chemically strengthened, and then subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the capacitor functional substrate, and has a thickness of 50 angstroms to 2000 angstroms;

The ITO-coated transparent substrate is coated with a uniform thickness on the ITO surface. Positive photoresist material, photoresist coating thickness is lum~5um;

After pre-baking, exposing, developing, etching, and removing the photoresist film, a thickness of 50-2000 angstroms and a regular ITO pattern or electrode are finally formed;

The ITO electrode comprises a capacitive screen driving and sensing electrode having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed;

Formation of the first insulating layer:

The transparent substrate after the ITO electrode is coated with a uniform thickness of the negative photoresist material on the surface of the ITO film, and the photoresist coating thickness is 0.5 um~3 um;

Pre-baked, exposed, and developed by photoresist, and finally formed a pattern of insulation layer with a thickness of 0.5~3um and regular;

Formation of ITO via electrodes:

Formation of the metal electrode layer:

The transparent substrate forming the ITO electrode layer is subjected to metal plating to form a uniform thickness metal film layer on the transparent substrate, and has a thickness of 500 angstroms to 4000 angstroms; the metal coated transparent substrate is on the metal surface thereof Applying a uniform thickness of positive photoresist material, the photoresist coating thickness is lum~5um;

Pre-baked, exposed, developed, etched, and stripped with photoresist to form a thickness of 500-4000 angstroms and a regular metal pattern or electrode;

Formation of the second insulating layer: The transparent substrate after the metal electrode is coated on the surface of the metal film with a uniform thickness of the negative photoresist material, and the thickness of the photoresist coating is 0.5 um~3 um;

7. The method according to claim 6, wherein the capacitive functional substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm; and the ITO comprises In203 and Sn02. Its mass ratio is 85~95: 5~15.

8. The method of preparing an ITO through-hole capacitive touch screen according to claim 7, wherein:

The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent; the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin And negative photosensitizers.

9. The method of preparing an ITO through-hole capacitive touch screen according to claim 8, wherein:

The method for preparing an ITO through-hole capacitive touch screen according to claim 9, wherein the ITO coating is performed by vacuum magnetron sputtering, or by chemical vapor deposition, or by thermal evaporation, or For sol gel.