WO2013011921A1 - 研磨パッド - Google Patents
研磨パッド Download PDFInfo
- Publication number
- WO2013011921A1 WO2013011921A1 PCT/JP2012/067835 JP2012067835W WO2013011921A1 WO 2013011921 A1 WO2013011921 A1 WO 2013011921A1 JP 2012067835 W JP2012067835 W JP 2012067835W WO 2013011921 A1 WO2013011921 A1 WO 2013011921A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- angle
- rate
- groove
- pad
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
Definitions
- the present invention relates to a polishing pad. More specifically, the present invention relates to a polishing pad that is preferably used for forming a flat surface in semiconductors, dielectric / metal composites, integrated circuits, and the like.
- CMP Chemical Mechanical Polishing
- a CMP apparatus includes a polishing head that holds a semiconductor wafer that is an object to be processed, a polishing pad that performs polishing of the object to be processed, and a polishing surface plate that holds the polishing pad.
- the polishing process of the semiconductor wafer uses a slurry to move the semiconductor wafer and the polishing pad relative to each other, thereby removing the protruding portion of the layer on the surface of the semiconductor wafer and flattening the layer on the surface of the wafer.
- the pad surface is updated by dressing using a diamond dresser or the like to prevent clogging and sharpening.
- the present inventors provide not only scratches by providing an inclined surface at the boundary between the polishing surface and the groove, but also an improvement in suction force and slurry flow between the wafer and the polishing pad, It has been found that the polishing rate is increased. However, it has also been found that the fluctuation of the polishing rate cannot be suppressed depending on the angle of the inclined surface. It has also been found that providing an inclined surface reduces the polishing surface area, increases the pad cut rate, and shortens the life of the pad.
- the present invention has been made in view of the above-described problems of the prior art, and it is an object of the present invention to provide a long-life polishing pad that can suppress fluctuations in the polishing rate while maintaining a high polishing rate, among other polishing characteristics.
- the present inventors considered that the inclination from the polishing surface to the groove bottom has an influence on the pad cut rate, and the angle between the polishing surface and the boundary between the grooves has an influence on the polishing rate. In order to achieve both, we thought that the problem could be solved by combining the angle at which the pad cut rate is reduced and the angle at which the polishing rate fluctuation is reduced.
- a polishing pad having at least a polishing layer, wherein the polishing layer includes a groove having a side surface on a polishing surface, and at least one of the side surfaces is continuous from the polishing surface, and an angle formed with the polishing surface is ⁇
- the first side surface is a second side surface that is continuous from the first side surface and is parallel to the polishing surface, and the angle ⁇ formed with the polishing surface is 95.
- the angle ⁇ formed by the surface parallel to the polishing surface is greater than 95 degrees, and the angle ⁇ formed by the surface parallel to the polishing surface is smaller than the angle ⁇ formed by the polishing surface.
- a polishing pad wherein a bending point depth from the polishing surface to a bending point of the first side surface and the second side surface is greater than 0.2 mm and 3.0 mm or less.
- the present invention can provide a long-life polishing pad that can suppress fluctuations in the polishing rate while maintaining a high polishing rate.
- FIG. 1 is a partial cross-sectional view showing a configuration of a main part of a polishing pad according to an embodiment of the present invention.
- FIG. 2 is a partial cross-sectional view showing the configuration (second example) of the main part of the polishing pad according to one embodiment of the present invention.
- FIG. 3 is a partial cross-sectional view showing the configuration (third example) of the main part of the polishing pad according to one embodiment of the present invention.
- FIG. 4 is a partial cross-sectional view showing the configuration (fourth example) of the main part of the polishing pad according to one embodiment of the present invention.
- the present inventor has intensively studied a long-life polishing pad that can suppress fluctuations in the polishing rate while maintaining a high polishing rate.
- the present inventor is a polishing pad having at least a polishing layer, wherein the polishing layer includes a groove having a side surface on a polishing surface, and at least one of the side surfaces is continuous from the polishing surface, An angle formed between the first side surface having an angle ⁇ and a second side surface continuous with the first side surface and having an angle ⁇ with the surface parallel to the polishing surface, the angle formed with the polishing surface ⁇ is greater than 95 degrees, the angle ⁇ formed with the surface parallel to the polishing surface is greater than 95 degrees, and the angle ⁇ formed with the surface parallel to the polishing surface is greater than the angle ⁇ formed with the polishing surface.
- a polishing pad that is small and has a bending point depth from the polishing surface to a bending point of the first side surface and the second side surface of greater than 0.2 mm and not greater than 3.0 mm.
- the polishing pad preferably has a cushion layer separately from at least the polishing layer.
- the strain constant of the cushion layer is preferably in the range of 7.3 ⁇ 10 ⁇ 6 ⁇ m / Pa or more and 4.4 ⁇ 10 ⁇ 4 ⁇ m / Pa or less.
- the upper limit is preferably 3.0 ⁇ 10 ⁇ 4 ⁇ m / Pa or less and more preferably 1.5 ⁇ 10 ⁇ 4 ⁇ m / Pa or less from the viewpoint of polishing rate fluctuation and local flatness of the material to be polished.
- the lower limit is preferably 1.0 ⁇ 10 ⁇ 5 ⁇ m / Pa or more, and more preferably 1.2 ⁇ 10 ⁇ 5 ⁇ m / Pa or more.
- the polishing rate fluctuation rate is preferably 20% or less, 15% or less is more preferable.
- the strain constant in the present invention is such that when a pressure of 27 kPa is applied with a dial gauge for 60 seconds using an indenter with a tip diameter of 5 mm, the thickness is (T1) ⁇ m, and then the pressure at 177 kPa is 60 seconds.
- cushion layers examples include natural rubber, nitrile rubber, “neoprene (registered trademark)” rubber, polybutadiene rubber, thermosetting polyurethane rubber, thermoplastic polyurethane rubber, silicone rubber, and “Hytrel (registered trademark)”.
- foamed elastomers examples include foamed elastomers, polyolefin foams such as “Tolepef (registered trademark, Pef manufactured by Toray Industries, Inc.)”, and non-woven fabrics such as “suba400” manufactured by Nitta Haas Co., but are not limited thereto. is not.
- the strain constant of the cushion layer can be adjusted according to the material. For example, when the cushion layer is a foam, the strain constant tends to increase because the degree of foaming tends to soften. Further, when the cushion layer is non-foamed, the hardness can be adjusted by adjusting the degree of crosslinking in the cushion layer.
- the thickness of the cushion layer is preferably in the range of 0.1 to 2 mm. From the viewpoint of in-plane uniformity over the entire surface of the semiconductor substrate, it is preferably 0.25 mm or more, and more preferably 0.3 mm or more. Moreover, from a viewpoint of local flatness, 2 mm or less is preferable and 1 mm or less is more preferable.
- the polishing layer surface (polishing surface) of the polishing pad in the present invention has a groove.
- Examples of the shape of the groove viewed from the surface of the polishing layer include, but are not limited to, a lattice shape, a radial shape, a concentric shape, and a spiral shape.
- the grooves are most preferably lattice-shaped because an open system extending in the circumferential direction can renew the slurry efficiently.
- At least one of the side surfaces of the groove in the present invention is a first side surface that is continuous from the polishing surface and has an angle ⁇ with the polishing surface, and a surface that is continuous from the first side surface and is parallel to the polishing surface. It is comprised from the 2nd side surface which makes the angle which is (beta).
- Each of the first side surface and the second side surface may be flat (linear in the cross-sectional shape of the groove) or curved surface (curved in the cross-sectional shape of the groove).
- the angle ⁇ is larger than 95 degrees
- the angle ⁇ is larger than 95 degrees
- the angle ⁇ is smaller than the angle ⁇ .
- the groove has a structure in which the contact area increases after a certain depth.
- Such an object can be achieved by adjusting the angles ⁇ and ⁇ as described above.
- the difference between the angle ⁇ and the angle ⁇ is more preferably 55 degrees or less, and further preferably 50 degrees or less.
- the angle ⁇ is preferably 105 degrees or more as a lower limit, and more preferably 115 degrees or more. Further, the upper limit of the angle ⁇ is preferably 150 degrees or less, and more preferably 140 degrees or less.
- the opposite side surfaces forming the groove may have the same shape, but since the slurry flows due to centrifugal force, it is better that at least the side surface on the circumferential side is inclined among the opposing side surfaces forming the groove. More effective.
- the angle ⁇ is not particularly limited as long as it is smaller than the angle ⁇ , but the upper limit is more preferably less than 150 degrees, and further preferably less than 140 degrees.
- the side surface (side surface 3) may be continuous from the side surface 2 in the opposite direction to the side surface 1, in which case the angle (angle 3) formed by the side surface 3 and the polishing surface is greater than 95 degrees, and the angle ⁇ Preferably it is smaller.
- n may be a natural number of 3 or more, and may have a side surface (side surface (n + 1)) continuous with the side surface n in the opposite direction to the side surface (n ⁇ 1).
- the angle (angle (n + 1)) made with the polishing surface is preferably larger than 95 degrees and smaller than the angle n.
- the polishing layer is scraped with the polishing of the material to be polished, and the polishing rate fluctuates when the polishing surface passes through the bending point which is the boundary between the first side surface and the second side surface. Further, since the pad cut rate is different between the first side surface and the second side surface of the shallowest groove side surface, the depth from the polishing surface to the bending point is an inclined groove portion on the polishing surface side. It is preferable that the depth is not less than a depth that does not reduce the effect.
- the depth from the polishing surface to the bending point is specifically preferably 10% or more and 95% or less of the entire depth of the groove, More preferably, it is 20% or more and 90% or less.
- the bending point depth from the polishing surface to the bending points of the first side surface and the second side surface is less than 0.2 mm.
- the range is large and 3.0 mm or less.
- the polished surface here is a polished surface before the polishing layer is shaved.
- the upper limit of the bending point depth from the polished surface to the bending point of the first side surface and the second side surface is preferably 2.5 mm or less, more preferably 2.0 mm or less, and even more preferably 1.8 mm or less.
- the lower limit of the bending point depth from the polishing surface to the bending point of the first side surface and the second side surface is preferably 0.3 mm or more, more preferably 0.4 mm or more, and further preferably 0.5 mm or more.
- FIG. 1 is a partial cross-sectional view showing a configuration of a main part of a polishing pad according to an embodiment of the present invention.
- a polishing pad 1 shown in the figure has a polishing layer 10.
- a groove 12 is formed in the polishing surface 11 of the polishing layer 10.
- the groove 12 is continuous with the polishing surface 11, is inclined with respect to the polishing surface 11 at an angle ⁇ , is continuous with the first side surface 13, and is bent with respect to the first side surface 13.
- 14 has a second side surface 15 bent through 14 and a deepest groove portion 16.
- the angle ⁇ of the second side surface with respect to the surface parallel to the polishing surface 11 is smaller than the angle ⁇ of the first side surface 13 with respect to the polishing surface 11.
- channel is not necessarily restricted to the shape shown in FIG.
- the deepest portion 18 may have a bottom surface substantially parallel to the polishing surface 11.
- the boundary portion between the second side surface 15 and the deepest portion 20 may be curved.
- the cross-sectional shape of the 2nd side surface 15 and the deepest part 22 may comprise U shape.
- the polishing layer constituting the polishing pad one having a structure having closed cells is preferable because it forms a flat surface in semiconductors, dielectric / metal composites, integrated circuits, and the like.
- the hardness of the polishing layer is preferably 45 to 65 degrees as measured by an Asker D hardness meter. When the Asker D hardness is less than 45 degrees, the uniformity of planarization characteristics (planarity) within the wafer surface is reduced as the polishing rate of the material to be polished decreases in the wafer surface uniformity (uniformity). ) Tend to decrease.
- materials for forming such a structure include polyethylene, polypropylene, polyester, polyurethane, polyurea, polyamide, polyvinyl chloride, polyacetal, polycarbonate, polymethyl methacrylate, polytetrafluoroethylene, epoxy resin, ABS resin, AS resin, phenol resin, melamine resin, “neoprene (registered trademark)” rubber, butadiene rubber, styrene butadiene rubber, ethylene propylene rubber, silicon rubber, fluororubber, and resins mainly composed of these. Two or more of these may be used. Even in such a resin, a material mainly composed of polyurethane is more preferable in that the closed cell diameter can be controlled relatively easily.
- Polyurethane is a polymer synthesized by polyaddition reaction or polymerization reaction of polyisocyanate.
- the compound used as the symmetry of the polyisocyanate is an active hydrogen-containing compound, that is, a compound containing two or more polyhydroxy groups or amino groups.
- Examples of the polyisocyanate include tolylene diisocyanate, diphenylmethane diisocyanate, naphthalene diisocyanate, hexamethylene diisocyanate, and isophorone diisocyanate, but are not limited thereto. Two or more of these may be used.
- the polyhydroxy group-containing compound is typically a polyol, and examples thereof include polyether polyol, polytetramethylene ether glycol, epoxy resin-modified polyol, polyester polyol, acrylic polyol, polybutadiene polyol, and silicone polyol. Two or more of these may be used. It is preferable to determine the combination and optimum amount of polyisocyanate and polyol, catalyst, foaming agent, and foam stabilizer depending on the hardness, the cell diameter and the expansion ratio.
- the chemical foaming method is generally used by blending various foaming agents into the resin during polyurethane production, but it is cured after foaming the resin by mechanical stirring.
- the method of making it can also be used preferably.
- the average cell diameter of closed cells is preferably 30 ⁇ m or more from the viewpoint of reducing scratches.
- the average bubble diameter is preferably 150 ⁇ m or less, more preferably 140 ⁇ m or less, and further preferably 130 ⁇ m or less.
- the average bubble diameter is observed in a circular shape that is missing at the edge of the field among the bubbles observed in one field of view when the cross section of the sample is observed at a magnification of 400 times with a VK-8500 ultra-deep microscope manufactured by Keyence.
- the circular bubbles excluding the generated bubbles are obtained by measuring the equivalent circle diameter from the cross-sectional area with an image processing apparatus and calculating the number average value.
- a preferred embodiment of the polishing pad according to the present invention is a pad containing a polymer of a vinyl compound and polyurethane and having closed cells.
- the toughness and hardness can be increased only with the polymer from the vinyl compound, it is difficult to obtain a uniform polishing pad having closed cells.
- Polyurethane becomes brittle when its hardness is increased.
- a vinyl compound is a compound having a polymerizable carbon-carbon double bond. Specifically, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-butyl acrylate, n-butyl methacrylate, 2-ethylhexyl methacrylate, isodecyl methacrylate, n-lauryl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl Methacrylate, 2-hydroxybutyl methacrylate, dimethylaminoethyl methacrylate, diethylaminoethyl methacrylate, glycidyl methacrylate, ethylene glycol dimethacrylate, acrylic acid, methacrylic acid, fumaric acid, dimethyl fumarate, diethyl fumarate, dipropyl fumarate, maleic acid, maleic Dimethyl acid, diethyl maleate, dipropyl maleate,
- CH 2 CR 1 COOR 2 (R 1 : methyl group or ethyl group, R 2 : methyl group, ethyl group, propyl group or butyl group) is preferable.
- R 1 methyl group or ethyl group
- R 2 methyl group, ethyl group, propyl group or butyl group
- methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, and isobutyl methacrylate are easy to form closed cells in polyurethane, good in impregnation of monomers, easy to cure by polymerization, and vinyl compounds that have been cured by polymerization.
- the foamed structure containing the polymer and polyurethane is preferred because of its high hardness and good flattening characteristics.
- Polymerization initiators preferably used for obtaining polymers of these vinyl compounds include azobisisobutyronitrile, azobis (2,4-dimethylvaleronitrile), azobiscyclohexanecarbonitrile, benzoyl peroxide, lauroyl peroxide. Examples thereof include radical initiators such as oxide and isopropyl peroxydicarbonate. Two or more of these may be used.
- a redox polymerization initiator for example, a combination of a peroxide and an amine can also be used.
- a method for impregnating a polyurethane with a vinyl compound a method of immersing the polyurethane in a container containing a vinyl compound can be mentioned.
- the amount of vinyl compound impregnated in polyurethane should be determined by the type of vinyl compound and polyurethane used and the characteristics of the polishing pad to be produced.
- the content ratio of the polymer obtained from the vinyl compound in the body and the polyurethane is preferably 30/70 to 80/20 by weight. If the content ratio of the polymer obtained from the vinyl compound is 30/70 or more by weight, the hardness of the polishing pad can be sufficiently increased. Further, if the content ratio is 80/20 or less, the elasticity of the polishing layer can be sufficiently increased.
- the polymer and polyurethane content obtained from the polymerized and cured vinyl compound in polyurethane can be measured by a pyrolysis gas chromatography / mass spectrometry method.
- a pyrolysis gas chromatography / mass spectrometry method As an apparatus that can be used in this method, a double shot pyrolyzer “PY-2010D” (manufactured by Frontier Laboratories) is used as a thermal decomposition apparatus, and “TRIO-1” (manufactured by VG) is used as a gas chromatograph / mass spectrometer. ).
- the polymer phase obtained from the vinyl compound and the polyurethane phase are contained without being separated.
- the infrared spectrum of the polishing pad observed with a micro-infrared spectrometer having a spot size of 50 ⁇ m has an infrared absorption peak of a polymer polymerized from a vinyl compound and an infrared absorption peak of polyurethane.
- the infrared spectra at various locations are substantially the same.
- IR ⁇ s manufactured by SPECTRA-TEC can be mentioned.
- the polishing pad may contain various additives such as an abrasive, an antistatic agent, a lubricant, a stabilizer, and a dye for the purpose of improving characteristics.
- the density of the polishing layer is preferably 0.3 g / cm 3 or more, more preferably 0.6 g / cm 3 or more, and 0.65 g / cm 3 from the viewpoint of reducing local flatness defects and global steps. More preferably, it is cm 3 or more. On the other hand, from the viewpoint of reducing scratches, 1.1 g / cm 3 or less is preferable, 0.9 g / cm 3 or less is more preferable, and 0.85 g / cm 3 or less is more preferable.
- the density of the polishing layer in the present invention is a value measured using a Harvard pycnometer (JIS R-3503 standard) and water as a medium.
- Examples of the material to be polished in the present invention include the surface of an insulating layer or metal wiring formed on a semiconductor wafer.
- Examples of the insulating layer include an interlayer insulating film of metal wiring, a lower insulating film of metal wiring, and shallow trench isolation used for element isolation.
- Examples of the metal wiring include aluminum, tungsten, copper, and alloys thereof, and structurally include damascene, dual damascene, and plug.
- a barrier metal such as silicon nitride is also subject to polishing.
- silicon oxide is currently mainstream, but a low dielectric constant insulating film is also used. In addition to semiconductor wafers, it can also be used for polishing magnetic heads, hard disks, sapphire, SiC, MEMS (Micro Electro Mechanical Systems) and the like.
- the polishing method of the present invention is suitably used for forming a flat surface on glass, semiconductors, dielectric / metal composites, integrated circuits and the like.
- ⁇ Micro rubber A hardness measurement> A sample obtained by cutting out the cushion layer into a size of 3 cm ⁇ 3 cm was used as a sample for hardness measurement, and was allowed to stand for 16 hours in an environment of a temperature of 23 ° C. ⁇ 2 ° C. and a humidity of 50% ⁇ 5%. Using a micro rubber hardness meter MD-1 manufactured by Kobunshi Keiki Co., Ltd., three different points were measured in one sample, and the calculated average value was defined as micro rubber A hardness.
- a pad with grooves formed on the surface of the polishing layer is arranged so that the razor blade is perpendicular to the groove direction and sliced in the groove depth direction, and the cross section of the groove is measured with a VK-8500 ultra-deep microscope manufactured by Keyence.
- the angle (angle ⁇ ) formed between the polishing surface and the side surface continuous with the polishing surface of the groove was measured.
- the closest groove was measured at the position of 1/3 of the radius and the position of 2/3 from the center of the pad, and the average of the two points in each place was taken as the inclination angle.
- the angle ⁇ was measured in the same manner.
- a pad with grooves formed on the surface of the polishing layer is arranged so that the razor blade is perpendicular to the groove direction and sliced in the groove depth direction, and the cross section of the groove is measured with a VK-8500 ultra-deep microscope manufactured by Keyence. By observing, the vertical distance from the polished surface to the midpoint of two opposing bending points consisting of the first side surface and the second side surface was measured. The nearest groove was measured at the position of 1/3 and 2/3 of the radius from the center of the pad, and the average of the two points in each place was taken as the bending point depth.
- a pad with grooves formed on the surface of the polishing layer is arranged so that the razor blade is perpendicular to the groove direction and sliced in the groove depth direction, and the cross section of the groove is measured with a VK-8500 ultra-deep microscope manufactured by Keyence. Observed, the distance between the two bending points facing each other between the polished surface having the angle ⁇ and the side surface 1 was measured and defined as the bending point distance. Further, the distance between the bending points at the initial stage of polishing was defined as the distance between the initial bending points.
- Polishing was performed while detecting the end point under predetermined polishing conditions using a Mirror 3400 manufactured by Applied Materials. The polishing characteristics were measured in the diameter direction, excluding the outermost periphery of 10 mm of the 8-inch wafer. An average polishing rate (nm / min) was calculated by measuring 37 points every 5 mm within a surface within a radius of 90 mm from the center.
- polishing rate fluctuation rate (%) ⁇ (maximum wafer average polishing rate) ⁇ (minimum wafer average polishing rate) ⁇ / (1000th wafer average polishing rate)
- the fluctuation rate of the polishing rate is preferably small, preferably 30% or less, more preferably 20% or less.
- Example 1 30 parts by weight of polypropylene glycol, 40 parts by weight of diphenylmethane diisocyanate, 0.5 parts by weight of water, 0.3 parts by weight of triethylamine, 1.7 parts by weight of a silicone foam stabilizer and 0.09 parts by weight of tin octylate are mixed in a RIM molding machine. Then, it was discharged into a mold and subjected to pressure molding to produce a closed-cell foamed polyurethane sheet.
- the foamed polyurethane sheet was immersed in methyl methacrylate to which 0.2 part by weight of azobisisobutyronitrile was added for 60 minutes. Next, 15 parts by weight of polyvinyl alcohol “CP” (degree of polymerization: about 500, manufactured by Nacalai Tesque), 35 parts by weight of ethyl alcohol (special grade reagent, manufactured by Katayama Chemical), water 50 The foamed polyurethane sheet surface layer was coated with polyvinyl alcohol by being immersed in a solution consisting of parts by weight and then dried.
- polyvinyl alcohol “CP” degree of polymerization: about 500, manufactured by Nacalai Tesque
- ethyl alcohol special grade reagent, manufactured by Katayama Chemical
- the foamed polyurethane sheet was sandwiched between two glass plates via a vinyl chloride gasket and polymerized and cured by heating at 65 ° C. for 6 hours and at 120 ° C. for 3 hours. After releasing from between the glass plates and washing with water, vacuum drying was performed at 50 ° C.
- a polishing layer was prepared by slicing the hard foam sheet thus obtained to a thickness of 2.00 mm.
- the methyl methacrylate content in the polishing layer was 66% by weight.
- the D hardness of the polishing layer was 54 degrees, the density was 0.81 g / cm 3 , and the average cell diameter of closed cells was 45 ⁇ m.
- the obtained hard foam sheet was ground on both sides to prepare a polishing layer having a thickness of 2.4 mm.
- thermoplastic polyurethane (cushion layer thickness: 0. 0) made by Nippon Matai Co., Ltd. having a strain constant of 0.15 ⁇ 10 ⁇ 4 ⁇ m / Pa (micro rubber A hardness 89) as a cushion layer was obtained on the polishing layer obtained by the above method. 3 ⁇ m) was laminated through a MA-6203 adhesive layer manufactured by Mitsui Chemicals Polyurethane Co., Ltd. using a roll coater, and a double-sided tape 5604TDM manufactured by Sekisui Chemical Co., Ltd. was bonded to the back surface as a back tape.
- This laminate is punched into a circle having a diameter of 508 mm, and grooves having a groove pitch of 15 mm, an angle ⁇ of 135 degrees, an angle ⁇ of 120 degrees, and a groove depth of 1.9 mm are formed in an XY lattice pattern on the polishing layer surface.
- a polishing pad was obtained.
- the bending point depth was 0.69 mm, and the distance between the initial bending points was 3 mm.
- a polishing machine (“Mirra 3400” manufactured by Applied Materials Co., Ltd.).
- Retainer ring pressure 41 kPa (6 psi)
- inner tube pressure 28
- the average polishing rate of the 1000th oxide film was 192.2 nm / min.
- the fluctuation rate of the polishing rate in 1000 sheets was 8.5%.
- the average pad cut rate was 1.22 ⁇ m / min, and the polishing pad life was 22 hours.
- Example 2 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was changed to 145 degrees, the polishing layer thickness was changed to 2.25 mm, and the groove depth was changed to 1.75 mm. At this time, the bending point depth was 0.46 mm, and the distance between the initial groove bending points was 3 mm. The average polishing rate was 195.2 nm / min, and the polishing rate fluctuation rate was 13.2%. The average pad cut rate was 1.15 ⁇ m / min, and the polishing pad life was 21 hours.
- Example 3 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was changed to 100 degrees, the polishing layer thickness was changed to 3.15 mm, and the groove depth was changed to 2.65 mm. At this time, the bending point depth was 1.37 mm, and the distance between the initial bending points was 3.4 mm. The average polishing rate was 184.1 nm / min, and the polishing rate fluctuation rate was 17.2%. The average pad cut rate was 1.22 ⁇ m / min, and the polishing pad life was 32 hours.
- Example 4 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 100 degrees, the angle ⁇ was 98 degrees, the polishing layer thickness was 2.0 mm, and the groove depth was 1.5 mm. At this time, the bending point depth was 0.3 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 187.8 nm / min, and the polishing rate fluctuation rate was 17.8%. The average pad cut rate was 1.20 ⁇ m / min, and the polishing pad life was 16 hours.
- Example 5 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 150 degrees, the angle ⁇ was 145 degrees, the polishing layer thickness was 2.0 mm, and the groove depth was 1.5 mm. At this time, the bending point depth was 0.27 mm, and the distance between the initial bending points was 5 mm. The average polishing rate was 201.9 nm / min, and the polishing rate fluctuation rate was 18.9%. The average pad cut rate was 1.24 ⁇ m / min, and the polishing pad life was 16 hours.
- Example 6 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 160 degrees, the angle ⁇ was 110 degrees, the polishing layer thickness was 2.5 mm, and the groove depth was 2.05 mm. At this time, the bending point depth was 0.79 mm, and the distance between the initial bending points was 5 mm. The average polishing rate was 183.8 nm / min, and the polishing rate fluctuation rate was 16.4%. The average pad cut rate was 1.35 ⁇ m / min and the polishing pad life was 21 hours.
- Example 7 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 115 degrees, the angle ⁇ was 100 degrees, the polishing layer thickness was 2.0 mm, and the groove depth was 1.5 mm. At this time, the bending point depth was 0.27 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 182.5 nm / min, and the polishing rate fluctuation rate was 17.5%. The average pad cut rate was 1.22 ⁇ m / min, and the polishing pad life was 16 hours.
- Example 8 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 165 degrees, the angle ⁇ was 155 degrees, the polishing layer thickness was 2.2 mm, and the groove depth was 1.7 mm. At this time, the bending point depth was 0.5 mm, and the distance between the initial bending points was 5 mm. The average polishing rate was 190.2 nm / min, and the polishing rate fluctuation rate was 15.6%. The average pad cut rate was 1.36 ⁇ m / min, and the polishing pad life was 17 hours.
- Example 9 Polishing was performed in the same manner as in Example 1 except that the polishing layer thickness was changed to 2.9 mm and the groove depth was changed to 2.4 mm. At this time, the bending point depth was 2.1 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 185.7 nm / min, and the polishing rate fluctuation rate was 14.4%. The average pad cut rate was 1.23 ⁇ m / min, and the polishing pad life was 28 hours.
- Example 10 Polishing was performed in the same manner as in Example 1 except that the polishing layer thickness was changed to 3.5 mm and the groove depth was changed to 3.0 mm. At this time, the bending point depth was 2.6 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 183.3 nm / min, and the polishing rate fluctuation rate was 15.1%. The average pad cut rate was 1.24 ⁇ m / min, and the polishing pad life was 36 hours.
- Example 11 Polishing was performed in the same manner as in Example 1 except that the two angles ⁇ facing each other across the groove on the polishing layer surface were 135 degrees and 130 degrees, and the two facing angles were changed to be different. At this time, the bending point depth was 0.69 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 191.8 nm / min, and the polishing rate fluctuation rate was 9.0%. The average pad cut rate was 1.20 ⁇ m / min, and the polishing pad life was 22 hours.
- Example 12 Polishing was performed in the same manner as in Example 1 except that a polyester film having a thickness of 188 ⁇ m was bonded to the back surface of the polishing layer via an adhesive and a cushion layer was bonded to the polyester film surface. At this time, the bending point depth was 0.69 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 192.8 nm / min, and the polishing rate fluctuation rate was 9.3%. The average pad cut rate was 1.22 ⁇ m / min, and the polishing pad life was 22 hours.
- Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 93 degrees, the angle ⁇ was 90 degrees, the polishing layer thickness was 2.0 mm, and the groove depth was 1.5 mm. At this time, the bending point depth was 0.27 mm, and the distance between the initial bending points was 1.5 mm.
- the average polishing rate was 180.1 nm / min, the polishing rate fluctuation rate was 45.1%, and the polishing rate fluctuation was large.
- the average pad cut rate was 1.12 ⁇ m / min, and the polishing pad life was 18 hours.
- Example 2 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 93 degrees, the angle ⁇ was 90 degrees, the polishing layer thickness was 2.0 mm, and the groove depth was 1.5 mm. At this time, the bending point depth was 0.27 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 189.5 nm / min, the polishing rate fluctuation rate was 30.8%, and the polishing rate fluctuation was large. The average pad cut rate was 1.5 ⁇ m / min, the polishing pad life was 13 hours, and the life was short.
- Example 3 Polishing was performed in the same manner as in Example 1 except that the angle ⁇ was 98 degrees, the polishing layer thickness was 2.0 mm, and the groove depth was 1.5 mm. At this time, the bending point depth was 0.15 mm, and the distance between the initial bending points was 3 mm. The average polishing rate was 190.1 nm / min, the polishing rate fluctuation rate was 36.2%, and the polishing rate fluctuation was large. The average pad cut rate was 1.42 ⁇ m / min, the polishing pad life was 14 hours, and the life was short.
- Example 4 Polishing was performed in the same manner as in Example 1 except that the groove angle ⁇ on the polishing layer surface was 160 degrees, the angle ⁇ was 100 degrees, the polishing layer thickness was 2.5 mm, and the groove depth was 2.0 mm. At this time, the bending point depth was 0.60 mm, and the distance between the initial bending points was 4 mm. The average polishing rate was 184.6 nm / min, the polishing rate fluctuation rate was 31.0%, and the polishing rate fluctuation was large. The average pad cut rate was 1.32 ⁇ m / min, and the polishing pad life was 21 hours.
- Table 1 shows the results obtained in Examples 1 to 12 and Comparative Examples 1 to 4 described above.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本発明者は、高い研磨レートを保ちながら研磨レートの変動を抑制できる長寿命の研磨パッドについて、鋭意検討した。その結果、本発明者は、少なくとも研磨層を有する研磨パッドであって、前記研磨層は研磨面に側面を有する溝を備え、前記側面の少なくとも一方は、研磨面から連続し、研磨面とのなす角度がαである第1の側面、および該第1の側面から連続し、研磨面と平行な面とのなす角度がβである第2の側面から構成され、前記研磨面とのなす角度αは95度より大きく、前記研磨面と平行な面とのなす角度βは95度より大きく、かつ、前記研磨面と平行な面とのなす角度βが前記研磨面とのなす角度αよりも小さいものであり、前記研磨面から前記第1の側面と前記第2の側面の屈曲点までの屈曲点深さが0.2mmより大きく、3.0mm以下であることを特徴とする研磨パッドを構成することにより、上述した課題を一挙に解決することができることを究明した。
歪定数(μm/Pa)=(T1-T2)/(177-27)/1000
サンプル断面をキーエンス製VK-8500の超深度顕微鏡にて倍率400倍で観察したときに一視野内に観察される気泡のうち、視野端部に欠損した円状に観察される気泡を除く円状気泡を画像処理装置にて断面面積から円相当径を測定し、算出した数平均値を平均気泡径とした。
JIS K6253-1997に準拠して行った。作製したポリウレタン樹脂を2cm×2cm(厚み:任意)の大きさに切り出したものを硬度測定用試料とし、温度23℃±2℃、湿度50%±5%の環境で16時間静置した。測定時には、試料を重ね合わせ、厚み6mm以上とした。硬度計(高分子計器(株)製、アスカーD型硬度計)を用い、硬度を測定した。
クッション層を3cm×3cmの大きさに切り出したものを硬度測定用試料とし、温度23℃±2℃、湿度50%±5%の環境で16時間静置した。高分子計器(株)製マイクロゴム硬度計MD-1を用いて、試料1枚の中で異なる3点を測定し、算出した平均値をマイクロゴムA硬度とした。
研磨層表面に溝を形成したパッドを、剃刀刃が溝方向に対して垂直となるように配置して溝深さ方向にスライスし、溝の断面をキーエンス製VK-8500の超深度顕微鏡にて観察して、研磨面と前記溝の研磨面と連続する側面の成す角度(角度α)を測定した。パッドの中心から半径の1/3の位置と2/3の位置において、最も近い溝を測定し、各1箇所合計2点の平均を傾斜角度とした。角度βも同様に測定した。
研磨層表面に溝を形成したパッドを、剃刀刃が溝方向に対して垂直となるように配置して溝深さ方向にスライスし、溝の断面をキーエンス製VK-8500の超深度顕微鏡にて観察して、研磨面から、第1の側面と第2の側面からなる向かい合う2つの屈曲点の中点までの垂直距離を測定した。パッドの中心から半径の1/3の位置と2/3の位置において、最も近い溝を測定し、各1箇所合計2点の平均を屈曲点深さとした。
研磨層表面に溝を形成したパッドを、剃刀刃が溝方向に対して垂直となるように配置して溝深さ方向にスライスし、溝の断面をキーエンス製VK-8500の超深度顕微鏡にて観察して、角度αを有する研磨面と側面1の向かい合う2つの屈曲点の距離を測定し、屈曲点距離とした。また、研磨初期の屈曲点間距離を初期屈曲点間距離とした。
先端の直径が5mmの圧子を用いて、ダイヤルゲージで27kPaの圧力を60秒間加えたときの厚みを(T1)μmとし、続いて177kPaでの圧力を60秒間加えたときの厚みを(T2)μmとして、以下の式に従って歪定数を算出した。
歪定数(μm/Pa)=(T1-T2)/(177-27)/1000
アプライドマテリアルズ(株)製のMirra 3400を用いて、所定の研磨条件で終点検出を行いながら研磨を行った。研磨特性は、8インチウェハーの最外周10mmを除外して、直径方向に測定した。中心から半径90mm以内の面内を5mm毎に37点を測定して平均研磨レート(nm/分)を算出した。
ウェハーを1000枚研磨して、ウェハー毎の平均研磨レートを測定した後、以下の式に従って1枚目から700枚目までの研磨レート変動率を算出した。
研磨レート変動率(%)={(最大ウェハー平均研磨レート)-(最小ウェハー平均研磨レート)}/(1000枚目ウェハー平均研磨レート)
アプライドマテリアルズ(株)のMirra 3400を用いて、所定の研磨条件で終点検出を行いながら研磨し、デプスゲージで30枚研磨後の溝深さ(D1)mm、1000枚研磨後の溝深さ(D2)mmを測定し、ドレッサーによるドレス時間(td)分から算出した。
平均パッドカットレート(μm/分)=(D1-D2)×1000/td
また、平均パッドカットレートは屈曲点間距離と角度αおよび角度βに依存する。屈曲点間距離は研磨の進行により変化する。研磨初期から研磨終期までの平均屈曲点間距離が小さいほうが平均パッドカットレートは小さい。
平均屈曲点間距離(mm)={(研磨初期断面積)-(研磨終期断面積)}/{(研磨初期最深部溝深さ)-(研磨終期最深部溝深さ)}
研磨初期の溝深さを測定し、最深部から0.3mm浅い有効溝深さ(D3)mmを算出し、ウェハーを研磨した時間(tp)分と前記平均パッドカットレートから算出した。
研磨パッドの寿命(時間)=D3×1000/(平均パッドカットレート)×tp/60
研磨パッドの寿命は15時間以上が好ましい。
ポリプロピレングリコール30重量部とジフェニルメタンジイソシアネート40重量部と水0.5重量部とトリエチルアミン0.3重量部とシリコーン整泡剤1.7重量部とオクチル酸スズ0.09重量部をRIM成型機で混合して、金型に吐出して加圧成型を行い、独立気泡の発泡ポリウレタンシートを作製した。
研磨層表面の溝の角度αを145度、研磨層厚みを2.25mm、溝深さを1.75mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.46mmであり、初期溝屈曲点間距離は3mmであった。平均研磨レートは195.2nm/分、研磨レート変動率は13.2%であった。平均パッドカットレートは1.15μm/分、研磨パッド寿命は21時間であり、良好な結果であった。
研磨層表面の溝の角度βを100度、研磨層厚みを3.15mm、溝深さを2.65mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは1.37mmであり、初期屈曲点間距離は3.4mmであった。平均研磨レートは184.1nm/分、研磨レート変動率は17.2%であった。平均パッドカットレートは1.22μm/分、研磨パッド寿命は32時間であり、良好な結果であった。
研磨層表面の溝の角度αを100度、角度βを98度、研磨層厚みを2.0mm、溝深さを1.5mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.3mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは187.8nm/分、研磨レート変動率は17.8%であった。平均パッドカットレートは1.20μm/分、研磨パッド寿命は16時間であり、良好な結果であった。
研磨層表面の溝の角度αを150度、角度βを145度、研磨層厚みを2.0mm、溝深さを1.5mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.27mmであり、初期屈曲点間距離は5mmであった。平均研磨レートは201.9nm/分、研磨レート変動率は18.9%であった。平均パッドカットレートは1.24μm/分、研磨パッド寿命は16時間であり、良好な結果であった。
研磨層表面の溝の角度αを160度、角度βを110度、研磨層厚みを2.5mm、溝深さを2.05mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.79mmであり、初期屈曲点間距離は5mmであった。平均研磨レートは183.8nm/分、研磨レート変動率は16.4%であった。平均パッドカットレートは1.35μm/分、研磨パッド寿命は21時間であり、良好な結果であった。
研磨層表面の溝の角度αを115度、角度βを100度、研磨層厚みを2.0mm、溝深さを1.5mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.27mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは182.5nm/分、研磨レート変動率は17.5%であった。平均パッドカットレートは1.22μm/分、研磨パッド寿命は16時間であり、良好な結果であった。
研磨層表面の溝の角度αを165度、角度βを155度、研磨層厚みを2.2mm、溝深さを1.7mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.5mmであり、初期屈曲点間距離は5mmであった。平均研磨レートは190.2nm/分、研磨レート変動率は15.6%であった。平均パッドカットレートは1.36μm/分、研磨パッド寿命は17時間であり、良好な結果であった。
研磨層厚みを2.9mm、溝深さを2.4mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは2.1mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは185.7nm/分、研磨レート変動率は14.4%であった。平均パッドカットレートは1.23μm/分、研磨パッド寿命は28時間であり、良好な結果であった。
研磨層厚みを3.5mm、溝深さを3.0mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは2.6mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは183.3nm/分、研磨レート変動率は15.1%であった。平均パッドカットレートは1.24μm/分、研磨パッド寿命は36時間であり、良好な結果であった。
研磨層表面の溝を挟んで向かい合う2つの角度αを135度と130度とし向かい合う二つの角度を異なるように変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.69mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは191.8nm/分、研磨レート変動率は9.0%であった。平均パッドカットレートは1.20μm/分、研磨パッド寿命は22時間であり、良好な結果であった。
研磨層裏面に接着剤を介して厚さ188μmのポリエステルフィルムを貼り合わせて、ポリエステルフィルム面にクッション層を貼り合わせた以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.69mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは192.8nm/分、研磨レート変動率は9.3%であった。平均パッドカットレートは1.22μm/分、研磨パッド寿命は22時間であり、良好な結果であった。
研磨層表面の溝の角度αを93度、角度βを90度、研磨層厚みを2.0mm、溝深さを1.5mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.27mmであり、初期屈曲点間距離は1.5mmであった。平均研磨レートは180.1nm/分、研磨レート変動率は45.1%であり、研磨レート変動が大きかった。平均パッドカットレートは1.12μm/分、研磨パッド寿命は18時間であり、良好な結果であった。
研磨層表面の溝の角度αを93度、角度βを90度、研磨層厚みを2.0mm、溝深さを1.5mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.27mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは189.5nm/分、研磨レート変動率は30.8%であり、研磨レート変動が大きかった。平均パッドカットレートは1.5μm/分、研磨パッド寿命は13時間であり、寿命が短かった。
角度βを98度、研磨層厚みを2.0mm、溝深さを1.5mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.15mmであり、初期屈曲点間距離は3mmであった。平均研磨レートは190.1nm/分、研磨レート変動率は36.2%であり、研磨レート変動が大きかった。平均パッドカットレートは1.42μm/分、研磨パッド寿命は14時間であり、寿命が短かった。
研磨層表面の溝の角度αを160度、角度βを100度、研磨層厚みを2.5mm、溝深さを2.0mmに変更した以外は実施例1と同様にして研磨した。このとき、屈曲点深さは0.60mmであり、初期屈曲点間距離は4mmであった。平均研磨レートは184.6nm/分、研磨レート変動率は31.0%であり、研磨レート変動が大きかった。平均パッドカットレートは1.32μm/分、研磨パッド寿命は21時間であり、良好な結果であった。
10 研磨層
11 研磨面
12、17、19、21 溝
13 第1の側面
14 屈曲点
15 第2の側面
16、18、20、22 最深部
Claims (5)
- 少なくとも研磨層を有する研磨パッドであって、
前記研磨層は研磨面に側面を有する溝を備え、
前記側面の少なくとも一方は、前記研磨面と連続し、前記研磨面とのなす角度がαである第1の側面、および該第1の側面と連続し、前記研磨面と平行な面とのなす角度がβである第2の側面から構成され、
前記研磨面とのなす角度αは95度より大きく、前記研磨面と平行な面とのなす角度βは95度より大きく、かつ、前記研磨面と平行な面とのなす角度βが前記研磨面とのなす角度αよりも小さいものであり、
前記研磨面から前記第1の側面と前記第2の側面の屈曲点までの屈曲点深さが0.2mmより大きく、3.0mm以下であることを特徴とする研磨パッド。 - 前記研磨面とのなす角度αと前記研磨面と平行な面とのなす角度βの差が55度以下であることを特徴とする請求項1に記載の研磨パッド。
- 前記研磨面とのなす角度αが105度以上、150度以下であることを特徴とする請求項1または2に記載の研磨パッド。
- 前記研磨面と平行な面とのなす角度βが95度より大きく、150度未満であることを特徴とする請求項1~3のいずれかに記載の研磨パッド。
- 前記研磨面の溝のパターンが格子状であることを特徴とする請求項1~4のいずれかに記載の研磨パッド。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020147000489A KR20140039043A (ko) | 2011-07-15 | 2012-07-12 | 연마 패드 |
EP12815419.2A EP2732917A4 (en) | 2011-07-15 | 2012-07-12 | POLISHING CUSHION |
CN201280034917.2A CN103648718A (zh) | 2011-07-15 | 2012-07-12 | 研磨垫 |
US14/232,851 US20140141704A1 (en) | 2011-07-15 | 2012-07-12 | Polishing pad |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011156424 | 2011-07-15 | ||
JP2011-156424 | 2011-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013011921A1 true WO2013011921A1 (ja) | 2013-01-24 |
Family
ID=47558099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/067835 WO2013011921A1 (ja) | 2011-07-15 | 2012-07-12 | 研磨パッド |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140141704A1 (ja) |
EP (1) | EP2732917A4 (ja) |
JP (1) | JPWO2013011921A1 (ja) |
KR (1) | KR20140039043A (ja) |
CN (1) | CN103648718A (ja) |
TW (1) | TW201313388A (ja) |
WO (1) | WO2013011921A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015109437A (ja) * | 2013-10-24 | 2015-06-11 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | シリコンウェーハを化学機械研磨する方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2732916A1 (en) * | 2011-07-15 | 2014-05-21 | Toray Industries, Inc. | Polishing pad |
JPWO2013039181A1 (ja) * | 2011-09-15 | 2015-03-26 | 東レ株式会社 | 研磨パッド |
JP2017001111A (ja) * | 2015-06-05 | 2017-01-05 | 株式会社ディスコ | 研磨パッド及びcmp研磨方法 |
US9925637B2 (en) * | 2016-08-04 | 2018-03-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tapered poromeric polishing pad |
TWI595968B (zh) * | 2016-08-11 | 2017-08-21 | 宋建宏 | 研磨墊及其製造方法 |
WO2018142623A1 (ja) * | 2017-02-06 | 2018-08-09 | 株式会社大輝 | ポリッシングバッドの凹部形成方法およびポリッシングパッド |
JP7105334B2 (ja) * | 2020-03-17 | 2022-07-22 | エスケーシー ソルミックス カンパニー,リミテッド | 研磨パッドおよびこれを用いた半導体素子の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002144219A (ja) | 2000-08-31 | 2002-05-21 | Rodel Nitta Co | 研磨パッド及びその研磨パッドを用いた被加工物の研磨方法 |
JP2003163192A (ja) * | 2001-11-29 | 2003-06-06 | Shin Etsu Handotai Co Ltd | 溝入り研磨布並びにワークの研磨方法及び研磨装置 |
JP2004186392A (ja) | 2002-12-03 | 2004-07-02 | Toshiba Ceramics Co Ltd | 研磨布 |
JP2009023018A (ja) * | 2007-07-17 | 2009-02-05 | Jsr Corp | 化学機械研磨パッドおよび化学機械研磨方法 |
JP2009220265A (ja) * | 2008-02-18 | 2009-10-01 | Jsr Corp | 化学機械研磨パッド |
JP2010045306A (ja) | 2008-08-18 | 2010-02-25 | Kuraray Co Ltd | 研磨パッド |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882251A (en) * | 1997-08-19 | 1999-03-16 | Lsi Logic Corporation | Chemical mechanical polishing pad slurry distribution grooves |
EP1211023B1 (en) * | 1999-03-30 | 2008-05-28 | Nikon Corporation | Polishing body, polisher, polishing method, and method for producing semiconductor device |
US6238271B1 (en) * | 1999-04-30 | 2001-05-29 | Speed Fam-Ipec Corp. | Methods and apparatus for improved polishing of workpieces |
US7070480B2 (en) * | 2001-10-11 | 2006-07-04 | Applied Materials, Inc. | Method and apparatus for polishing substrates |
CN1270356C (zh) * | 2003-02-14 | 2006-08-16 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨垫 |
KR20070070094A (ko) * | 2005-12-28 | 2007-07-03 | 제이에스알 가부시끼가이샤 | 화학 기계 연마 패드 및 화학 기계 연마 방법 |
CN101637888B (zh) * | 2008-08-01 | 2013-09-18 | 智胜科技股份有限公司 | 研磨垫及其制造方法 |
TWM352127U (en) * | 2008-08-29 | 2009-03-01 | Bestac Advanced Material Co Ltd | Polishing pad |
JPWO2013039181A1 (ja) * | 2011-09-15 | 2015-03-26 | 東レ株式会社 | 研磨パッド |
TW201317082A (zh) * | 2011-09-16 | 2013-05-01 | Toray Industries | 研磨墊 |
-
2012
- 2012-07-12 KR KR1020147000489A patent/KR20140039043A/ko active IP Right Grant
- 2012-07-12 CN CN201280034917.2A patent/CN103648718A/zh active Pending
- 2012-07-12 JP JP2012532393A patent/JPWO2013011921A1/ja not_active Withdrawn
- 2012-07-12 WO PCT/JP2012/067835 patent/WO2013011921A1/ja active Application Filing
- 2012-07-12 US US14/232,851 patent/US20140141704A1/en not_active Abandoned
- 2012-07-12 EP EP12815419.2A patent/EP2732917A4/en not_active Withdrawn
- 2012-07-13 TW TW101125282A patent/TW201313388A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002144219A (ja) | 2000-08-31 | 2002-05-21 | Rodel Nitta Co | 研磨パッド及びその研磨パッドを用いた被加工物の研磨方法 |
JP2003163192A (ja) * | 2001-11-29 | 2003-06-06 | Shin Etsu Handotai Co Ltd | 溝入り研磨布並びにワークの研磨方法及び研磨装置 |
JP2004186392A (ja) | 2002-12-03 | 2004-07-02 | Toshiba Ceramics Co Ltd | 研磨布 |
JP2009023018A (ja) * | 2007-07-17 | 2009-02-05 | Jsr Corp | 化学機械研磨パッドおよび化学機械研磨方法 |
JP2009220265A (ja) * | 2008-02-18 | 2009-10-01 | Jsr Corp | 化学機械研磨パッド |
JP2010045306A (ja) | 2008-08-18 | 2010-02-25 | Kuraray Co Ltd | 研磨パッド |
Non-Patent Citations (1)
Title |
---|
See also references of EP2732917A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015109437A (ja) * | 2013-10-24 | 2015-06-11 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | シリコンウェーハを化学機械研磨する方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2732917A1 (en) | 2014-05-21 |
KR20140039043A (ko) | 2014-03-31 |
US20140141704A1 (en) | 2014-05-22 |
JPWO2013011921A1 (ja) | 2015-02-23 |
TW201313388A (zh) | 2013-04-01 |
EP2732917A4 (en) | 2015-04-15 |
CN103648718A (zh) | 2014-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013011921A1 (ja) | 研磨パッド | |
WO2012111502A1 (ja) | 研磨パッド | |
WO2013039181A1 (ja) | 研磨パッド | |
WO2013039203A1 (ja) | 研磨パッド | |
JP2013018056A (ja) | 研磨パッド | |
JP2006339570A (ja) | 研磨パッドおよび研磨装置 | |
WO2013011922A1 (ja) | 研磨パッド | |
WO2013103142A1 (ja) | 研磨パッド | |
JP2006339573A (ja) | 研磨パッドおよび研磨装置 | |
WO2013129426A1 (ja) | 研磨パッド | |
JP5292958B2 (ja) | 研磨パッド | |
JP2011200984A (ja) | 研磨パッド | |
JP2004014744A (ja) | 研磨パッド、研磨装置、およびそれを用いた研磨方法 | |
JP5454153B2 (ja) | 研磨方法および半導体デバイスの製造方法 | |
JP2014188647A (ja) | 研磨パッド | |
JP2007150337A (ja) | 研磨方法 | |
JP2007116194A (ja) | 研磨方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2012532393 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12815419 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20147000489 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012815419 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14232851 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |