WO2012176701A1

WO2012176701A1 - Device board, display apparatus, television receiver apparatus, and method for making device board

Info

Publication number: WO2012176701A1
Application number: PCT/JP2012/065331
Authority: WO
Inventors: 達朗黒田
Original assignee: シャープ株式会社
Priority date: 2011-06-22
Filing date: 2012-06-15
Publication date: 2012-12-27

Abstract

An array board (device board) comprises: gate wires (first wires) (26); capacitance wires (second wires) (33) arranged in parallel with and adjacent to the gate wires; a guiding wire (third wire) (43) crossing the gate and capacitance wires with a gate insulating film (insulating layer) intervening between the guiding wire and the gate and capacitance wires; slits (44) arranged at least in those portions of the capacitance wires which cross over the guiding wire; and at least one pair of bridges (45) positioned and arranged such that the guiding wire exists between the bridges and that the gate insulating film intervenes between the pair of bridges and the gate and capacitance wires to insulate the pair of bridges from the gate and capacitance wires and that each bridge extends between the gate and capacitance wires.

Description

Element substrate, display device, television receiver, and element substrate manufacturing method

The present invention relates to an element substrate, a display device, a television receiver, and a method for manufacturing the element substrate.

A liquid crystal panel used for a liquid crystal display device has a structure in which a liquid crystal layer is sandwiched between a pair of glass substrates. One of the glass substrates has a TFT as an active element for controlling the operation of each pixel. The formed array substrate is used. The display area of the array substrate has a structure in which a large number of gate lines and source lines are provided in a grid pattern, and TFTs are provided at intersections between the gate lines and the source lines. In addition, between the adjacent gate lines, capacitor lines parallel to the gate lines are formed. On the other hand, in the non-display area of the array substrate, a lead-out line is formed in parallel with the source line and across each gate line and each capacitor line. By being connected to the wiring, it is possible to supply a signal to each capacitor wiring through the lead wiring.

By the way, although the intersections between the routing wiring and each gate wiring are kept insulative with each other via the insulating layer, the insulating layer may be destroyed by the influence of static electricity generated during the manufacturing process of the array substrate. Then, there is a possibility that the lead wiring and the gate wiring are short-circuited. As an example of one that addresses such a problem, one described in Patent Document 1 below is known.

Japanese Patent Laid-Open No. 2005-215094

(Problems to be solved by the invention)
In the above-mentioned Patent Document 1, a slit is formed in the lead wiring to divide the lead wiring into a plurality of parts, and when a short circuit occurs, a short-circuit portion in a portion divided by the slit in the lead wiring. Repair is performed by selectively cutting off the portion having the. However, since the slits are provided, the line width of the routing wiring is increased, and the overlapping area with each gate wiring and each capacitance wiring is increased accordingly. For this reason, the parasitic capacitance generated between the routing wiring and each gate wiring is increased, the signal transmitted to each gate wiring is likely to become dull, and the overlapping area is large. There is a risk that a short circuit is likely to occur between the wiring and each gate wiring and each capacitor wiring.

The present invention has been completed based on the above situation, and is an element suitable for repairing when a short circuit occurs while reducing the overlapping area of the first wiring, the second wiring, and the third wiring. An object is to provide a substrate.

(Means for solving problems)
The element substrate of the present invention includes a first wiring, a second wiring that is parallel to the first wiring and arranged adjacent to the first wiring, and an insulating layer for the first wiring and the second wiring. A third wiring intersecting with each other through, a slit disposed in at least a portion of the second wiring straddling the third wiring, and at least a pair disposed at a position sandwiching the third wiring, By being arranged with respect to the first wiring and the second wiring through an insulating layer, the first wiring and the second wiring are insulated and spanned between the first wiring and the second wiring. And a transfer section.

Since the first wiring and the second wiring are insulated from the bridging portion by being arranged via the insulating layer with respect to the bridging portion spanned between the first wiring and the second wiring, If a short circuit does not occur at the intersection with the three wirings, a signal or the like can be transmitted to each of the first wiring, the second wiring, and the third wiring.

Here, for example, when a short circuit occurs at the intersection of the first wiring and the third wiring, a portion of the first wiring that sandwiches the third wiring and is sandwiched between at least a pair of the bridging portions. Disconnect and disconnect from the first wiring. On the other hand, at least a pair of the bridging portions spanned between the first wiring and the second wiring adjacent thereto are short-circuited to the first wiring and the second wiring, respectively. Further, among the plurality of portions arranged across the slit in the second wiring, a portion that is short-circuited by at least a pair of bridge portions with respect to the first wiring is cut and separated from the second wiring. As described above, a signal or the like can be transmitted to the first wiring by using a part of the second wiring.

As described above, since a part of the second wiring adjacent to the first wiring can be used for repair when a short circuit occurs in the first wiring, it is possible to cope by providing a slit in the third wiring. As compared with the above, the line width of the third wiring can be reduced. Since the third wiring intersects with both the first wiring and the second wiring, the overlapping area between the first wiring and the second wiring decreases as the line width decreases. Accordingly, it is possible to obtain an effect that the parasitic capacitance that can be generated between the first wiring, the second wiring, and the third wiring is reduced, and the possibility that a short circuit occurs is reduced. In addition, the space between the first wiring and the second wiring can be reduced as compared with the case where the wiring dedicated for repair is provided separately from the first wiring and the second wiring, so that space saving can be achieved. This is suitable for achieving the above.

For example, when a short circuit occurs at the intersection of the third wiring and one of the plurality of parts arranged with the slit in the second wiring, the second wiring is arranged with the slit in between. By cutting a portion short-circuited with the third wiring among the plurality of portions, a signal or the like can be transmitted to the second wiring using a portion that is not short-circuited with the third wiring.

The following configuration is preferable as an embodiment of the present invention.
(1) A plurality of the first wirings and the second wirings are arranged alternately. In this way, it is possible to increase the number of installations of the transfer section, as compared with the case where a plurality of the first wirings or the second wirings are continuously arranged, which is preferable in increasing the degree of freedom of repair. Become.

(2) At least a pair of the bridging portions are formed so as to bridge between the first wiring and a pair of the second wirings adjacent to each other with the first wiring interposed therebetween. In this way, when the first wiring is short-circuited with the third wiring, any of the pair of second wirings adjacent to the first wiring can be used for repair. The degree of freedom increases. For example, even when one second wiring adjacent to the first wiring short-circuited with the third wiring is short-circuited with the third wiring, the first second wiring adjacent to the first wiring is used to make the first wiring. While repairing to transmit the signal of the wiring, it is possible to repair the one second wiring by separating the short-circuited portion from the third wiring.

(3) One of the bridging portions that bridges between the first wiring and one of the pair of second wirings, and of the first wiring and the pair of second wirings The other bridging portion that bridges the other second wiring is arranged at a position shifted from each other in the extending direction of the first wiring. If it does in this way, compared with the case where one bridging part and the other bridging part are arranged in the same position about the extension direction of the 1st wiring, one bridging part and the other bridging part Since the distance between the two is relatively large, it is difficult to short-circuit one of the bridges and the other bridge.

(4) One of the bridging portions that bridges between the second wiring and the first wiring of one of the pair of the first wirings arranged across the second wiring, and the second wiring The other bridging portion that bridges between the wiring and the other first wiring of the pair of first wirings is disposed at a position shifted from each other in the extending direction of the second wiring. . If it does in this way, compared with the case where one bridging part and the other bridging part are arranged in the same position about the extension direction of the 2nd wiring, one bridging part and the other bridging part Since the distance between the two is relatively large, it is difficult to short-circuit one of the bridges and the other bridge.

(5) The second wiring includes a slit forming portion in which the slit is formed and a slit non-forming portion in which the slit is not formed, and the slit forming portion and the slit non-forming portion have the same line width. It is said. In this way, the line width of the second wiring does not change between the slit forming portion and the slit non-forming portion, which is more suitable for facilitating manufacture and space saving.

(6) The insulating portion interposed between the bridge portion and the third wire, and the first wire and the second wire, wherein the bridge portion and the third wire are arranged in the same layer. The layers are the same. This makes it possible to form the crossover portion all together when forming the third wiring, which is suitable for reducing the manufacturing cost.

(7) The slit is formed over a range exceeding at least a pair of the spanning portions arranged at a position sandwiching the third wiring in the second wiring. In this way, for example, when a short circuit occurs at the intersection between the first wiring and the third wiring, the second wiring is connected to the first wiring out of the plurality of portions arranged with the slit interposed therebetween. Then, at least a portion that is short-circuited by the pair of bridge portions is cut. At this time, the cutting position in the second wiring can be set to a positional relationship that overlaps with the slit in the extending direction of the second wiring, so that a part of the second wiring can be cut in a straight line. It becomes possible. Therefore, it is possible to obtain an effect that the certainty at the time of separating a part of the second wiring is increased.

(8) Fourth wiring parallel to the third wiring and adjacent to the third wiring and intersecting the first wiring and the second wiring through an insulating layer, and the first wiring And at least a pair of second slits arranged in a portion straddling the fourth wiring, and at a position sandwiching the fourth wiring, and with respect to the first wiring and the second wiring The second wiring part is provided between the first wiring and the second wiring while being insulated from the first wiring and the second wiring by being arranged through an insulating layer. In this way, for example, when a short circuit occurs at the intersection of the second wiring and the fourth wiring, the fourth wiring among the second wirings is sandwiched and at least a pair of the second bridge portions The part sandwiched between them is cut and separated from the second wiring. On the other hand, at least a pair of second bridging portions spanned between the second wiring and the first wiring adjacent thereto are short-circuited to the first wiring and the second wiring, respectively. Furthermore, among the plurality of portions arranged across the second slit in the first wiring, the first wiring is cut by cutting at least a portion short-circuited by the pair of second bridging portions with respect to the second wiring. Disconnect from. As described above, a signal or the like can be transmitted to the second wiring by using a part of the first wiring.

Thus, since the slit is formed in the second wiring and the second slit is formed in the first wiring, the first wiring is compared with the case where both the slit and the second slit are formed in the second wiring. The difference in wiring resistance that can occur between the first wiring and the second wiring can be reduced.

For example, when a short circuit occurs between one of a plurality of portions arranged across the second slit in the first wiring and the fourth wiring, the second slit is formed in the first wiring. By cutting a portion that is short-circuited with the fourth wiring among a plurality of portions arranged with being sandwiched, signals or the like can be transmitted to the first wiring using a portion that is not short-circuited with the fourth wiring. .

(9) A plurality of the first wirings and the second wirings are arranged in an alternating manner, and the bridge portion includes a pair of adjacent ones sandwiching the first wiring and the first wiring. Whereas at least one pair is formed so as to bridge between the second wirings, the second bridging portion is a pair of the second wirings and the second wirings adjacent to each other. At least one pair is formed so as to bridge the first wiring. In this way, when the first wiring is short-circuited with the third wiring, any of the pair of second wirings adjacent to the first wiring can be used for repair, and in addition, the second wiring Even if a short circuit occurs with the fourth wiring, any one of the pair of first wirings adjacent to the second wiring can be used for repair, and the degree of freedom in repairing is extremely high. Become.

(10) A switching element having at least an electrode connected to the first wiring or the second wiring is provided. In this way, a short circuit occurring at the intersection of the first wiring and the third wiring and a short circuit occurring at the intersection of the second wiring and the third wiring can be repaired, respectively. Can be driven.

Next, in order to solve the above problem, a display device of the present invention is sealed between the element substrate described above, a counter substrate facing the element substrate, and the element substrate and the counter substrate. A liquid crystal layer.

According to such a display device, since the overlapping area of the first wiring, the second wiring, and the third wiring can be reduced and the repair can be suitably performed even when a short circuit occurs, the display quality is high and the display reliability is improved. It becomes a thing with high property. Further, such a display device can be applied as a liquid crystal display device to various uses such as a display of a television or a personal computer, and is particularly suitable for a large screen. In addition, when such a display device includes a lighting device that emits light toward the element substrate and the counter substrate, high luminance can be obtained and display quality can be improved.

Next, in order to solve the above-described problem, a method for manufacturing an element substrate according to the present invention includes a first wiring and a first wiring arranged in parallel with the first wiring and adjacent to the first wiring. Two wirings, a third wiring intersecting the first wiring and the second wiring with an insulating layer interposed therebetween, a slit disposed in at least a portion of the second wiring across the third wiring, At least a pair is arranged at a position sandwiching the third wiring, and is insulated from the first wiring and the second wiring by being arranged through an insulating layer with respect to the first wiring and the second wiring. And a wiring forming step for forming a bridging portion that is bridged between the first wiring and the second wiring, an intersection between the first wiring and the third wiring, and the second wiring Whether or not a short circuit has occurred at the intersection of the wiring and the third wiring In the case where a short circuit has occurred at each of the inspection step for inspecting and the intersection of the first wiring and the third wiring, at least a pair of the bridges sandwiching the third wiring among the first wiring While cutting the portion sandwiched between the first wiring and separating from the first wiring, at least a pair of the bridging portions spanned between the first wiring and the second wiring adjacent to the first wiring, Each of the first wiring and the second wiring is short-circuited, and among the plurality of portions arranged across the slit in the second wiring, at least a pair of the bridging portions with respect to the first wiring The part to be short-circuited is cut off and separated from the second wiring, and when a short circuit occurs at the intersection of the second wiring and the third wiring, the slit is sandwiched in the second wiring. so Cutting the portion of short-circuited with the third wiring among the plurality of portions to be performed and a repair process.

(The invention's effect)
ADVANTAGE OF THE INVENTION According to this invention, the element board | substrate suitable for performing the repair at the time of the occurrence of a short circuit can be provided, reducing the overlapping area of 1st wiring, 2nd wiring, and 3rd wiring.

1 is an exploded perspective view showing a schematic configuration of a television receiver according to Embodiment 1 of the present invention. The exploded perspective view which shows schematic structure of the liquid crystal display device with which a television receiver is equipped Sectional drawing which shows schematically the cross-sectional structure of a liquid crystal display device Sectional drawing which shows the cross-sectional structure of a liquid crystal panel roughly The top view which shows the plane structure of the display area in the array substrate which comprises a liquid crystal panel The top view which shows the plane structure of the display area in CF substrate which comprises a liquid crystal panel Vii-vii cross-sectional view of FIG. A plan view schematically showing a wiring configuration in an array substrate constituting a liquid crystal panel The top view which shows the structure in the intersection of gate wiring and capacity wiring, and lead wiring Xx sectional view of FIG. Xi-xi sectional view of FIG. Plan view showing the repair method when the gate wiring and lead-out wiring are short-circuited, or when the capacity wiring and lead-out wiring are short-circuited The top view which shows the structure in the cross | intersection part of the gate wiring which concerns on the modification 1 of Embodiment 1, and a capacity | capacitance wiring and lead wiring. The top view which shows the structure in the intersection part of the gate wiring which concerns on the modification 2 of Embodiment 1, and a capacity | capacitance wiring and a lead wiring. The top view which shows the structure in the intersection part of the gate wiring which concerns on the modification 3 of Embodiment 1, and a capacity | capacitance wiring and a lead wiring. The top view which shows the structure in the cross | intersection part of the gate wiring which concerns on Embodiment 2 of this invention, a capacity | capacitance wiring, and a lead wiring. A plan view showing a case where a patterning defect occurs in the transfer part The top view which shows the repair method when the gate wiring and lead wiring which concern on Embodiment 3 of this invention short-circuit Sectional drawing which shows the lamination | stacking relationship between the bridge | bridging part which concerns on Embodiment 4 of this invention, a gate wiring, and a capacity | capacitance wiring The top view which shows roughly the wiring structure in the array board | substrate which comprises the liquid crystal panel which concerns on Embodiment 5 of this invention. Plan view showing the configuration at the intersection of source wiring and spare wiring Xxii-xxii cross-sectional view of FIG. Xxiii-xxiii sectional view of FIG. The top view which shows the structure in the cross | intersection part of the gate wiring which concerns on Embodiment 6, and the capacity | capacitance wiring and the lead wiring. The top view which shows the structure in the cross | intersection part of the gate wiring which concerns on Embodiment 7, and routing wiring The top view which shows the structure in the cross | intersection part of the gate wiring which concerns on Embodiment 8, and a capacity | capacitance wiring and a lead wiring. The top view which shows the structure in the cross | intersection part of the gate wiring and the lead wiring which concern on Embodiment 9.

<Embodiment 1>
A first embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a method for manufacturing the array substrate 20 provided in the liquid crystal panel (display panel) 11 constituting the liquid crystal display device 10 is illustrated. In addition, a part of each drawing shows an X axis, a Y axis, and a Z axis, and each axis direction is drawn to be a direction shown in each drawing. Moreover, let the upper side shown in FIG. 3 be a front side, and let the lower side of the figure be a back side.

As shown in FIG. 1, the television receiver TV according to this embodiment includes a liquid crystal display device (display device) 10, front and back cabinets Ca and Cb that are accommodated so as to sandwich the liquid crystal display device 10, a power supply P, A tuner T and a stand S are provided. The liquid crystal display device 10 has a horizontally long rectangular shape as a whole, and includes a liquid crystal panel 11 as a display panel and a backlight device (illumination device) 12 as an external light source, as shown in FIGS. Is integrally held by the bezel 13 or the like.

First, an outline of the configuration of the backlight device 12 will be described. The backlight device 12 is a so-called direct type in which a light source is disposed directly under the back surface of the liquid crystal panel 11. The backlight device 12 includes a chassis 14 having a light emitting portion opened on the front side (light emitting side, liquid crystal panel 11 side), a reflective sheet (reflecting member) 15 laid in the chassis 14, and light emitting from the chassis 14. An optical member 16 attached so as to cover the portion, a frame 17 for holding the optical member 16, a plurality of cold cathode tubes (light sources) 18 accommodated in parallel in the chassis 14, and a cold cathode The lamp holder 19 is configured to shield the end of the tube 18 and to have light reflectivity.

Next, the liquid crystal panel 11 will be described. As shown in FIG. 4, the liquid crystal panel 11 is formed by enclosing a liquid crystal layer 22 containing a liquid crystal material, which is a substance whose optical characteristics change with application of an electric field, between a pair of

substrates

20 and 21. The liquid crystal panel 11 has a frame shape (frame shape) surrounding the display area AA on the outer periphery side of the screen, whereas the area on the center side of the screen is a display area (inner periphery area) AA capable of displaying an image. This area is a non-display area (outer peripheral area) NAA incapable of displaying an image (see FIG. 8). In FIG. 8, the inner area surrounded by the alternate long and short dash line indicates the display area AA. In addition, a pair of front and back polarizing plates 23 are respectively attached to the outer surface sides of the

substrates

20 and 21.

Of the pair of

substrates

20 and 21 constituting the liquid crystal panel 11, the one disposed on the back side (backlight device 12 side) is an array substrate (element substrate, active matrix substrate) 20, as shown in FIG. A substrate disposed on the front side (light emitting side) is a CF substrate (counter substrate) 21. Each of the array substrate 20 and the CF substrate 21 is formed by laminating various structures (thin films) described later on a transparent (translucent) glass substrate GS.

First, an outline of the configuration related to the display area AA in the array substrate 20 will be described. As shown in FIG. 5, three electrodes 24a to 24c are provided in the display area AA on the inner surface side (the liquid crystal layer 22 side, the surface facing the CF substrate 21, and the wiring forming surface) of the array substrate 20 (glass substrate GS). A large number of TFTs (Thin Film Transistors) 24 and pixel electrodes 25 that are switching elements having a plurality of TFTs are provided side by side, and the TFTs 24 and the pixel electrodes 25 extend in the X-axis direction in a lattice shape. A large number of gate wirings (first wirings) 26 and a large number of source wirings 27 extending along the Y-axis direction are disposed so as to surround them. The gate wiring 26 and the source wiring 27 are connected to the gate electrode 24a and the source electrode 24b of the TFT 24, respectively, and the pixel electrode 25 is connected to the drain electrode 24c of the TFT 24 via the drain wiring 34. The array substrate 20 is provided with a large number of capacitor wirings (second wirings, auxiliary capacitor wirings, storage capacitor wirings, Cs wirings) 33 that are parallel to the gate wirings 26 and overlap the pixel electrodes 25 in plan view. Yes. The capacitor wiring 33 is made of the same material as the gate wiring 26 and is formed in the same layer in the same process in the manufacturing process. A large number of capacitor wirings 33 and gate wirings 26 are arranged in a line alternately in the Y-axis direction. The gate wiring 26 is disposed between the pixel electrodes 25 adjacent in the Y-axis direction, while the capacitor wiring 33 is disposed at a position that substantially crosses the central portion of each pixel electrode 25 in the Y-axis direction. . The gate wiring 26 and the capacitor wiring 33 that are parallel to each other and the source wiring 27 that intersects with the gate wiring 26 and the capacitor wiring 33 are kept in an insulated state by interposition of a gate insulating film (insulating layer) 35 to be described later. On the other hand, the pixel electrode 25 and the source wiring 27 that overlap each other in a plan view are kept in an insulated state by interposition of an interlayer insulating film 37 and a protective film 38 described later (see FIG. 7). The pixel electrode 25 is made of a translucent conductive material (transparent conductive material) such as ITO (Indium Tin Oxide). Both the gate wiring 26 and the source wiring 27 are made of a conductive metal material. In particular, the source wiring 27 has a two-layer structure in which

different metal films

39 and 40 are laminated. Of these, the lower metal film 39 is made of titanium (Ti), whereas the upper metal film is formed. 40 is made of aluminum (Al) (see FIG. 7). An alignment film 28 for aligning liquid crystal molecules contained in the liquid crystal layer 22 is formed on the inner surface side of the array substrate 20 (FIG. 4).

Next, an outline of the configuration related to the display area AA in the CF substrate 21 will be described. In the display area AA on the inner surface side (the liquid crystal layer 22 side, the surface facing the array substrate 20) of the CF substrate 21 (glass substrate GS), as shown in FIGS. A large number of color filters are arranged side by side at a position overlapping the electrode 25 in a plan view. In the color filter, the colored portions 29 exhibiting R (red), G (green), and B (blue) are arranged alternately along the X-axis direction. In addition, the outer shape of each colored portion 29 has a vertically long rectangular shape in plan view following the outer shape of the pixel electrode 25. Between each coloring part 29 which comprises a color filter, the light-shielding part (black matrix) 30 which makes the grid | lattice shape for preventing color mixing is formed. The light shielding portion 30 is disposed so as to overlap with the gate wiring 26, the source wiring 27, and the capacitor wiring 33 on the array substrate 20 in plan view. A counter electrode 31 is provided on the surface of each colored portion 29 and the light shielding portion 30 so as to face the pixel electrode 25 on the array substrate 20 side. An alignment film 32 for aligning liquid crystal molecules contained in the liquid crystal layer 22 is formed on the inner surface side of the CF substrate 21.

Here, the TFT 24 that is a switching element in the structure of the array substrate 20 will be described in detail. As shown in FIG. 7, the TFT 24 has a structure in which a plurality of thin films are sequentially stacked on a glass substrate GS forming the array substrate 20, and specifically, gates in order from the lower layer side (glass substrate GS side). A gate electrode 24a connected to the wiring 26, a gate insulating film (insulating layer) 35, a semiconductor film 36, a doping semiconductor film 42, a source electrode 24b connected to the source wiring 27, and a drain electrode 24c connected to the drain wiring 34; An interlayer insulating film (passivation film) 37 and a protective film 38 are stacked.

The gate electrode 24a is made of the same material as the gate wiring 26 and is patterned immediately above the glass substrate GS in the same process as the gate wiring 26 and the capacitor wiring 33. For example, in addition to aluminum (Al), chromium (Cr), It can be formed of a single metal film such as tantalum (Ta), titanium (Ti), copper (Cu), or a laminated film thereof. As shown in FIG. 5, the gate electrode 24a extends from the vicinity of the intersection of the gate wiring 26 extending along the X-axis direction with the source wiring 27 in the branch line extending along the Y-axis direction. It is constituted by. The gate insulating film 35 is made of, for example, a silicon nitride film (SiNx), and as shown in FIG. 7, the gate electrode 24a and the semiconductor film 36 described below are kept in an insulating state. The gate insulating film 35 has a solid pattern that covers not only the TFT 24 formation region but also the entire surface of the glass substrate GS. Outside the formation region of the TFT 24, the gate insulating film 35 is located at the intersection of the relatively lower gate wiring 26 and the capacitor wiring 33, the relatively upper source wiring 27, and a later-described routing wiring 43. It is assumed that they are interposed between them and kept in an insulated state.

The semiconductor film 36 is made of, for example, amorphous silicon (a-Si). As shown in FIG. 7, one end side is connected to the source electrode 24b and the other end side is connected to the drain electrode 24c. It has a channel region CH for conducting. The doped semiconductor film 42 is made of amorphous silicon (n + Si) doped with an n-type impurity such as phosphorus (P) at a high concentration. The doping semiconductor film 42 extends along the semiconductor film 36 but is removed with respect to the range of the channel region CH, and a pair of portions arranged with the channel region CH interposed therebetween are a source electrode 24b and a drain described below. It constitutes a part of the electrode 24c.

As shown in FIG. 7, the source electrode 24 b and the drain electrode 24 c include the same material as the source wiring 27 and the drain wiring 34 and are patterned on the glass substrate GS in the same process as the source wiring 27 and the drain wiring 34. . The source electrode 24b and the drain electrode 24c are arranged to face each other with a predetermined interval in the X-axis direction. The source electrode 24b and the drain electrode 24c are disposed on the upper layer side with respect to the gate electrode 24a via the gate insulating film 35 and the semiconductor film 36, respectively, and a part (opposing portion) of the source electrode 24b and the drain electrode 24c is planar with respect to the gate electrode 24a. The overlapping portion is placed on the gate electrode 24a. The source electrode 24b and the drain electrode 24c are formed by laminating first conductive films 24b1 and 24c1 on the lower layer side (semiconductor film 36 side) and second conductive films 24b2 and 24c2 on the upper layer side (interlayer insulating film 37 side). Is done. The first conductive films 24b1 and 24c1 on the lower layer side are respectively constituted by the end portions of the doping semiconductor film 42 described above, and function as ohmic contact layers that are in ohmic contact with the semiconductor film 36 on the lower layer side. is there. The second conductive films 24b2 and 24c2 on the upper layer side have a two-layer structure in which different metal films are laminated, and the metal film 39 on the lower layer side is made of titanium (Ti), whereas the metal on the upper layer side is made. The film 40 is made of aluminum (Al). That is, the source electrode 24b and the drain electrode 24c are common to the source wiring 27 in that they have the second conductive films 24b2 and 24c2 made of two

metal films

39 and 40. The structure differs from the source wiring 27 in that the first conductive films 24b1 and 24c1 are provided. Further, as shown in FIG. 5, the source electrode 24b extends along a branch line extending along the X-axis direction from the vicinity of the intersection with the gate wiring 26 in the source wiring 27 extending along the Y-axis direction. It is comprised by the front-end | tip part.

The interlayer insulating film 37 is made of, for example, a silicon nitride film (SiNx), and is made of the same material as the gate insulating film 35 described above. The protective film 38 is made of an acrylic resin (for example, polymethyl methacrylate resin (PMMA)) or a polyimide resin, which is an organic material. Therefore, the protective film 38 is thicker than the gate insulating film 35 and the interlayer insulating film 37 made of other inorganic materials and functions as a planarizing film. Each of the interlayer insulating film 37 and the protective film 38 has a substantially solid pattern that covers not only the region where the TFT 24 is formed but also the entire surface of the glass substrate GS. The interlayer insulating film 37 and the protective film 38 are interposed between the relatively lower source wiring 27 and drain wiring 34 and the relatively upper pixel electrode 25 outside the TFT 24 formation region. These are kept in an insulating state.

Of the TFT 24 configured as described above, the drain wiring 34 connected to the drain electrode 24c is substantially L-shaped in plan view as shown in FIG. 5, and one end side of the drain wiring 34 is connected to the drain electrode 24c. In contrast, the other end is connected to the pixel connection portion 41 connected to the pixel electrode 25. As shown in FIG. 7, the drain wiring 34 is formed on the gate insulating film 35, is made of the same material as the source wiring 27, and has the same two-layer structure. Titanium (Ti) A lower metal film 39 made of aluminum and an upper metal film 40 made of aluminum (Al). Therefore, the drain wiring 34 is composed of only the second conductive films 24b2 and 24c2 (39, 40) of the source electrode 24b and the drain electrode 24c, as in the case of the source wiring 27, and the first conductive films 24b1, 24c1 (42). It differs from these in that it does not have.

Subsequently, a configuration related to the non-display area NAA in the array substrate 20 will be described. In the non-display area NAA on the inner surface side of the glass substrate GS constituting the array substrate 20, as shown in FIG. 8, a gate driver (gate side driving component) GD and a source driver (source side driving component) for driving the TFT 24 are provided. ) SD is connected through an anisotropic conductive film. The gate driver GD and the source driver SD are connected to a control board (not shown), and the TFT 24 can be driven by supplying various signals output from the control board to each wiring of the array substrate 20. Has been. The source driver SD is attached to one end (upper end shown in FIG. 8) of the array substrate 20 along the long side direction (X-axis direction). On the other hand, the gate driver GD is attached to one end (the right end shown in FIG. 8) of the array substrate 20 along the short side direction (Y-axis direction).

In the non-display area NAA of the array substrate 20, as shown in FIG. 8, a gate wiring 26, a source wiring 27, and a capacitor wiring 33 existing on the display area AA side are respectively extended. The source wiring 27 reaches the connection point of the source driver SD at the connection point of the driver GD. That is, the gate line 26, the source line 27, and the capacitor line 33 are formed so as to straddle the display area AA and the non-display area NAA. Regarding the capacitor wiring 33, its extended end is arranged at a position inside the display area AA side of the non-display area NAA than the connection position of the gate driver GD, and the lead wiring 43 formed there. Connected to. The routing wiring 43 is arranged at one end of the non-display area NAA of the array substrate 20 along the short side direction, and extends along the Y-axis direction while crossing each gate wiring 26 and each capacitance wiring 33 arranged in parallel. (In parallel with the source wiring 27), and its end reaches the connection location of the source driver SD and is connected to the source driver SD. A plurality of lead wirings 43 are arranged in parallel with each other, and are connected to specific capacitance wirings 33 respectively. The lead wiring 43 is made of the same material as that of the source wiring 27 and is formed in the same layer in the same manufacturing process. As shown in FIG. 10, the lower metal film 39 and the upper metal film 40 are formed. With. Therefore, the routing wiring 43 is arranged on the upper layer side with respect to each intersecting gate wiring 26 and each capacitance wiring 33 via the gate insulating film 35, so that the gate wiring 26 and the capacitance wiring 33 are different. Insulated state is maintained. However, a contact hole (not shown) is formed in the gate insulating film 35 at the intersection of the routing wiring 43 with the predetermined capacitance wiring 33, so that the predetermined capacitance wiring 33 is connected to the contact wiring through the contact hole. Are electrically connected. In this way, various signals and the like are supplied from the gate driver GD to the gate wiring 26 and from the source driver SD to the capacitor wiring 33 via the source wiring 27 and the routing wiring 43, respectively. Yes.

Next, in the non-display area NAA of the array substrate 20, the configuration related to the intersection of the gate wiring 26, the capacitor wiring 33 and the lead wiring 43 will be described in detail. As shown in FIG. 9, a slit 44 is formed at the intersection of the capacitive wiring 33 with the routing wiring 43. The slit 44 is formed over a predetermined range across the lead wire 43 in the capacitor wire 33. Specifically, the overlapping portion of the capacitor wire 33 that overlaps the lead wire 43 in a plan view (shown in FIG. 9). The portion shown by the broken line in the formation range of the surrounding wiring 43) and the pair of non-overlapping portions that sandwich the overlapping portion from both sides and do not overlap the surrounding wiring 43. The slit 44 is formed of an elongated opening extending linearly in parallel with the X-axis direction, that is, the extending direction of the capacitor wiring 33, and both end portions thereof have a semicircular shape when viewed in a plane. In the capacitor wiring 33, a slit forming portion 33a in which a slit 44 is formed is divided into two, and these are defined as two divided portions 33a1. The capacitor wiring 33 includes a slit forming portion 33a and a slit non-forming portion 33b in which the slit 44 is not formed. The line widths of the slit forming portion 33a and the slit non-forming portion 33b are equal to each other. Therefore, the capacity wiring 33 has a substantially uniform size over almost the entire length, with the line width hardly changing in the middle. In the present embodiment, all of the many gate wirings 26 become “first wirings” that do not have the slits 44, and all of the many capacitive wirings 33 become “second wirings” that have the slits 44, and these The routing wiring 43 that intersects with the "third wiring". Note that FIG. 9 focuses on representing the planar configuration of each of the

wirings

26, 33, 43 and the transfer portion 45, so that the gate insulating film 35, the interlayer insulating film 37, and the protective film 38 are illustrated. Omitted.

Further, as shown in FIG. 9, a bridge portion 45 is bridged between the gate wirings 26 and the capacitor wirings 33 that are arranged in large numbers alternately in the Y-axis direction. The bridge portion 45 extends along the Y-axis direction (the direction orthogonal to the extending direction of the gate wiring 26 and the capacitor wiring 33, the extending direction of the routing wiring 43), and is adjacent to each other. 26 and the capacitor wiring 33 are bridged between the two. One end of the transfer portion 45 overlaps the gate wiring 26 in a plan view, while the other end overlaps the capacitance wiring 33 adjacent to the gate wiring 26 in a plan view. Are superimposed. As shown in FIG. 11, the bridge portion 45 is made of the same material as the source wiring 27 and the routing wiring 43 and is formed in the same layer in the same process in the manufacturing process. And an upper metal film 40. That is, the bridge portion 45 has conductivity similar to the source wiring 27 and the routing wiring 43, but is arranged on the upper layer side through the gate insulating film 35 with respect to the gate wiring 26 and the capacitor wiring 33. Thus, normally, the gate wiring 26 and the capacitor wiring 33 are kept in an insulated state. However, when laser light or the like is irradiated to a portion of the transfer portion 45 that overlaps with the gate wiring 26 and the capacitor wiring 33 in a plan view, the gate insulating film 35 is melted at the irradiated portion, whereby the transfer portion 45. The gate line 26 and the capacitor line 33 are short-circuited.

As shown in FIG. 9, the bridge portion 45 is arranged as a pair at a position sandwiching the routing wiring 43 in the extending direction between the adjacent gate wiring 26 and the capacitor wiring 33. 26 and two sets of capacitor wirings 33 are arranged. That is, four transfer portions 45 are provided for each of the gate lines 26 and the capacity lines 33. A pair of spanning portions 45 forming one set are positioned closer to the routing wiring 43 than both ends of the slit 44 in the X-axis direction, that is, between the end of the slit 44 and the routing wiring 43. Each is arranged. In other words, the slit 44 is formed over a range that exceeds the pair of bridge portions 45 that sandwich the routing wiring 43 in the capacitor wiring 33. Therefore, the bridging portion 45 bridges the slit forming portion 33a of the capacitor wiring 33 and the gate wiring 26, and more specifically, one of the two divided portions 33a1 constituting the slit forming portion 33a and the gate. The wiring 26 is bridged. That is, one set (one pair) of the crossover portions 45 is arranged for each of the two divided portions 33a1 with respect to the capacitor wiring 33. Then, the pair of spanning portions 45 forming one set has one division portion 33a1 at two positions separated in the X-axis direction with respect to the gate wiring 26 adjacent on the opposite side to the other division portion 33a1 side. It will be handed over. A pair of bridge portions 45 that bridges one divided portion 33a1 and the gate wiring 26 and a pair of bridge portions 45 that bridge the other divided portion 33a1 and the gate wiring 26 opposite to the above are X It is arranged at almost the same position in the axial direction. In addition, the pair of spanning portions 45 forming a pair are substantially equal in distance from the routing wire 43 (distance from each end portion of the slit 44), and in a symmetrical position with the routing wire 43 as the center. It is arranged.

This embodiment has the structure as described above, and its operation will be described next. First, a manufacturing method of the liquid crystal display device 10 will be schematically described. When the liquid crystal display device 10 is manufactured, the liquid crystal panel 11 and the backlight device 12 are separately manufactured, and the liquid crystal panel 11 and the backlight device 12 are assembled via a bezel 13 or the like. Below, the manufacturing method of the liquid crystal panel 11, especially the manufacturing method of the array substrate 20, will be described in detail.

When manufacturing the liquid crystal panel 11, an array substrate structure forming step (wiring forming step) for forming each structure on the glass substrate GS forming the array substrate 20, and each structure on the glass substrate GS forming the CF substrate 21. After performing the CF substrate structure forming step for forming the object, the substrate bonding step for bonding the glass substrate GS forming the array substrate 20 and the glass substrate GS forming the CF substrate 21 with the liquid crystal layer 22 interposed therebetween is performed. . Next, an inspection process is performed for inspecting whether or not the

wirings

26, 27, 33, and 43 are broken or short-circuited. For the liquid crystal panel 11 in which a defect is detected, repair for repairing the defective part is performed. Perform the process. Then, after performing a polarizing plate attaching step of attaching the polarizing plate 23 to the outer surface side of the pair of glass substrates GS forming the liquid crystal panel 11, the gate driver GD and the source driver SD are mounted on the non-display area NAA of the array substrate 20. The liquid crystal panel 11 is manufactured by performing the driver mounting process. Subsequently, each step will be described in detail.

In the array substrate structure forming step, the TFT 24, the

wirings

26, 27, 33, and 43, the insulating

films

35, 37, and 38, and the pixel electrode 25 are formed on the glass substrate GS that forms the array substrate 20 by a known photolithography method. Etc. are sequentially laminated. In this array substrate structure forming process, the gate wiring 26 and the capacitor wiring 33 are formed in the same process at the same time using the same material and the same manufacturing apparatus, and particularly when the capacitor wiring 33 is formed. A slit 44 is formed at a portion that intersects the circuit wiring 43. Similarly, in the array substrate structure forming process, the source wiring 27, the routing wiring 43, and the transfer portion 45 are formed in a lump in the same process using the same material and the same manufacturing apparatus. Thus, it can be said that the array substrate structure forming process includes a wiring forming process for forming the slits 44 and the bridge portions 45 in addition to the

wirings

26, 27, 33, and 43. In addition, after the pixel electrode 25 is formed, an alignment film 28 is formed and the alignment process is performed.

The substrate bonding step is performed by applying a sealing agent on one glass substrate GS and dropping a liquid crystal material, and then curing the sealing agent while bonding the other glass substrate GS. In the inspection process, the liquid crystal panel 11 is irradiated with light from a backlight device for inspection (not shown), and each

wiring

26, 27, 33 (43) of the array substrate 20 is inspected from an inspection device (not shown). By inputting a signal, it is performed while displaying a predetermined inspection image, and an operator visually observes the displayed inspection image or picks up the inspection image with an image sensor and performs image processing. Therefore, the presence or absence of defects is inspected. At this time, for example, when a certain gate wiring 26 is short-circuited to the routing wiring 43 at an intersection, a linear display defect called a line defect occurs. In addition, for example, when a certain capacitance wiring 33 is short-circuited at a crossing portion with respect to the routing wiring 43 that is not scheduled to be connected among the plurality of routing wirings 43, the same line defect may occur. There is.

In the repair process, troublesome wiring is repaired for the liquid crystal panel 11 in which a defect is detected in the inspection process. For example, when a short-circuit portion SP1 occurs at a portion where a certain gate wiring 26 (the gate wiring 26 illustrated at the top in FIG. 12) intersects the routing wiring 43, the gate wiring 26 is irradiated with laser light. By doing so, the short-circuited portion with the lead wiring 43 is cut off. Specifically, as shown in FIG. 12, in the X-axis direction of the gate wiring 26, laser light is irradiated to two positions between the short-circuited wiring wiring 43 and the pair of bridge portions 45, A cut portion BP1 is formed by linearly cutting along the Y-axis direction so as to cross the gate wiring 26 at the position. As a result, it is possible to separate from the gate wiring 26 the portion sandwiched between the short-circuited routing wiring 43 and sandwiched between the pair of bridge portions 45. Therefore, a portion of the gate wiring 26 that is short-circuited with the lead wiring 43 can be separated from the main body portion of the gate wiring 26 to be electrically isolated.

On the other hand, by irradiating a pair of spanning portions 45 spanned between the gate wiring 26 in which the short circuit has occurred and the capacitor wiring 33 adjacent thereto, each of the bridging portions 45 and the gate wiring. 26 and the capacitor wiring 33 are short-circuited. Specifically, as shown in FIG. 12, laser light is respectively applied to a portion of the bridge portion 45 that overlaps with the gate wiring 26 where the short circuit has occurred and a portion that overlaps with the capacitance wiring 33 in plan view. When the irradiation is performed, the gate insulating film 35 at the irradiation location is melted, whereby each of the overlapping portions in the transfer portion 45 is short-circuited with respect to the gate wiring 26 and the capacitor wiring 33 to form a short-circuit portion SP2. Thereby, the main body part (the part excluding the shorted part) of the gate wiring 26 short-circuited to the routing wiring 43 can be electrically connected to the divided portion 33 a 1 which is a part of the adjacent capacitor wiring 33. it can.

Further, of the two divided portions 33a1 arranged across the slit 44 in the capacitor wiring 33, the divided portion 33a1 that is short-circuited to the gate wiring 26 by the transfer portion 45 is irradiated with laser light to cut it. To separate. Specifically, as shown in FIG. 12, among the divided portions 33 a 1 that are short-circuited to the gate wiring 26 by the bridge portion 45, the X-axis direction is opposite to the routed wire 43 side with respect to each bridge portion 45. Laser light is irradiated to two positions on the side (each end side of the slit 44). Since the irradiation position (cutting position) of this laser beam is in a positional relationship overlapping with the slit 44 in the X-axis direction, it can be cut linearly along the Y-axis direction across the dividing portion 33a1. Thereby, the cutting part BP2 is formed. Thereby, the division part 33a1 short-circuited with the gate wiring 26 by the bridge | crossover part 45 can be isolate | separated from the original capacity | capacitance wiring 33, and can be made electrically independent.

By performing the above repair, the signal supplied to the gate wiring 26 short-circuited to the routing wiring 43 is transmitted from the main body portion of the gate wiring 26 to a part of the adjacent capacitive wiring 33 via the bridge 45. Displayed normally by bypassing a certain divided portion 33a1 (specifically, the divided portion 33a1 on the gate wiring 26 side where the short circuit occurred) and flowing again to the main body portion of the gate wiring 26 via the transfer portion 45 The data is transmitted to each TFT 24 in the area AA. As described above, since the gate wiring 26 can be repaired by using a part of the capacitor wiring 33 adjacent to the gate wiring 26, compared with the conventional case where a slit is provided in the lead wiring. Thus, the line width of the lead wiring 43 can be reduced. Since the routing wiring 43 intersects with both the gate wiring 26 and the capacitor wiring 33, the overlapping area between the gate wiring 26 and the capacitor wiring 33 decreases as the line width decreases. Therefore, the parasitic capacitance that can be generated between the gate wiring 26 and the capacitor wiring 33 and the routing wiring 43 is reduced, and the possibility of a short circuit itself is reduced. Further, as compared with the case where a wiring dedicated for repair is provided, the space between the gate wiring 26 and the capacitor wiring 33 can be reduced, so that space saving can be achieved and the pitch between wirings can be reduced. This is also suitable for (high definition).

By the way, in the present embodiment, when repairing the gate wiring 26 short-circuited with the routing wiring 43, it is possible to use any of the pair of capacitor wirings 33 adjacent to each other across the gate wiring 26 for repair. ing. That is, as shown in FIG. 12, the gate wirings 26 are respectively spanned by the bridging portions 45 with respect to the pair of capacitive wirings 33 adjacent to each other in the Y-axis direction. Among the portions 33a, the divided portions 33a1 on the side of the shorted gate wiring 26 can be selectively used as detours for transmitting the signal of the gate wiring 26, respectively. Thereby, the following effects can be obtained. In other words, for example, one of the capacitor wirings 33 adjacent to the gate wiring 26 short-circuited to the routing wiring 43 (capacitance wiring 33 adjacent to the upper side of the shorted gate wiring 26 in FIG. 12) on the gate wiring 26 side. When even the divided portion 33a1 is short-circuited to the routing wiring 43 (when a short-circuited portion SP3 indicated by a two-dot chain line in FIG. 12 occurs), when repairing the gate wiring 26, the other adjacent one is repaired. What is necessary is just to repair so that the division | segmentation part 33a1 by the side of the gate wiring 26 in the capacity | capacitance wiring 33 (capacity wiring 33 adjacent to the lower side of the shorted gate wiring 26 in FIG. 12) may be utilized. Here, if the gate wiring is not bridged only to the capacitive wiring on one side by the spanning part, it cannot be repaired if the bridged capacitive wiring is short-circuited to the routing wiring. End up. In this respect, in the present embodiment, the repair can be performed by selectively using the pair of capacitor wirings 33 adjacent to the gate wiring 26, so that the degree of freedom in repairing is high, and the gate wiring 26 can be repaired. The probability of being able to rescue is high.

Further, for example, when a short-circuit spot SP3 (shown by a two-dot chain line in FIG. 12) occurs at a crossing portion of a certain capacitance wiring 33 with respect to the routing wiring 43, the capacitance wiring 33 is short-circuited. By irradiating a laser beam to the divided portion 33a1 where the occurrence of the problem occurs, a portion short-circuited with the lead wiring 43 is separated. Specifically, as shown in FIG. 12, among the divided portions 33a1 in which the short circuit occurs in the capacitor wiring 33, two positions between the short-circuited wiring wire 43 and the pair of bridge portions 45 in the X-axis direction. Is irradiated with a laser beam, and is cut linearly along the Y-axis direction so as to cross the dividing portion 33a1 at that position to form a cut portion BP3 (shown by a two-dot chain line in FIG. 12). To do. As a result, it is possible to separate a portion sandwiched between the short-circuited routing wire 43 and between the pair of spanning portions 45 from the divided portion 33 a 1 of the capacitor wiring 33. Accordingly, a portion of the divided portion 33a1 of the capacitive wiring 33 that is short-circuited with the lead wiring 43 can be separated from the main body portion of the capacitive wiring 33 and electrically isolated. By performing the repair described above, the signal supplied to the capacitor wiring 33 short-circuited to the lead wiring 43 is appropriately transmitted by the dividing portion 33a1 on the side where no short-circuiting occurs.

As described above, the array substrate (element substrate) 20 of the present embodiment has the gate wiring (first wiring) 26 and the capacitor wiring (second wiring) arranged in parallel with the gate wiring 26 and adjacent to the gate wiring 26. Wiring) 33, a routing wiring (third wiring) 43 that intersects the gate wiring 26 and the capacitive wiring 33 with a gate insulating film (insulating layer) 35 interposed therebetween, and at least the routing wiring 43 among the capacitive wiring 33. At least a pair of slits 44 arranged in the straddling portion and the routing wiring 43 are arranged, and the gate wiring 26 and the capacitor wiring 33 are arranged via the gate insulating film 35 by being arranged. And a cross-over portion 45 that is insulated from the gate wiring 26 and the capacitive wiring 33 and is bridged between the gate wiring 26 and the capacitive wiring 33.

Since the gate wiring 26 and the capacitor wiring 33 are insulated from the bridge portion 45 by being arranged via the gate insulating film 35 with respect to the bridge portion 45 bridged between them, If a short circuit does not occur at the intersection between the wiring 33 and the routing wiring 43, a signal or the like can be transmitted to each of the gate wiring 26, the capacitance wiring 33, and the routing wiring 43.

Here, for example, when a short circuit occurs at the intersection between the gate wiring 26 and the routing wiring 43, the routing wiring 43 is sandwiched between the gate wiring 26 and at least between the pair of crossover portions 45. The portion to be cut is cut off from the gate wiring 26. On the other hand, at least a pair of the bridging portions 45 spanned between the gate wiring 26 and the capacitor wiring 33 adjacent thereto are short-circuited to the gate wiring 26 and the capacitor wiring 33, respectively. Further, among the plurality of portions arranged across the slit 44 in the capacitor wiring 33, at least a portion short-circuited by the pair of bridge portions 45 with respect to the gate wiring 26 is cut and separated from the capacitor wiring 33. As described above, a signal or the like can be transmitted to the gate wiring 26 using a part of the capacitor wiring 33.

In this way, a part of the capacitor wiring 33 adjacent to the gate wiring 26 can be used for repair when a short circuit occurs in the gate wiring 26, so that provision is made by providing a slit 44 in the lead wiring 43. Compared to the case, the line width of the lead wiring 43 can be reduced. Since the routing wiring 43 intersects with both the gate wiring 26 and the capacitor wiring 33, the overlapping area between the gate wiring 26 and the capacitor wiring 33 decreases as the line width decreases. Accordingly, it is possible to obtain an effect that the parasitic capacitance that can be generated between the gate wiring 26 and the capacitor wiring 33 and the lead wiring 43 is reduced, and that the possibility of a short circuit is reduced. Further, the space between the gate wiring 26 and the capacitor wiring 33 can be reduced as compared with the case where a repair-dedicated wiring is provided separately from the gate wiring 26 and the capacitor wiring 33, so that space saving can be achieved. This is suitable for achieving the above.

For example, when a short circuit occurs at an intersection between one of a plurality of portions arranged across the slit 44 in the capacitive wiring 33 and the lead wiring 43, the slit 44 is sandwiched in the capacitive wiring 33. By cutting a portion that is short-circuited with the lead-out wiring 43 among the plurality of portions that are arranged, a signal or the like can be transmitted to the capacitor wiring 33 using a portion that is not short-circuited with the lead-out wiring 43. . As described above, according to the present embodiment, it is possible to provide an array substrate 20 suitable for repairing when a short circuit occurs while reducing the overlapping area of the gate wiring 26 and the capacitor wiring 33 and the routing wiring 43. Can do.

In addition, a plurality of gate wirings 26 and capacitor wirings 33 are arranged alternately. In this way, it is possible to increase the number of installation portions 45 and to increase the degree of freedom in repair, as compared with a case where a plurality of gate wirings 26 or capacitor wirings 33 are continuously arranged. It becomes.

Further, at least one pair of the bridging portions 45 are formed so as to bridge between the gate wiring 26 and the pair of adjacent capacitor wirings 33 with the gate wiring 26 interposed therebetween. In this way, when the gate line 26 is short-circuited with the routing line 43, any of the pair of capacitor lines 33 adjacent to the gate line 26 can be used for repair. Increases freedom in For example, even when one capacitor wiring 33 adjacent to the gate wiring 26 short-circuited to the routing wiring 43 is short-circuited to the routing wiring 43, the other capacitance wiring 33 adjacent to the gate wiring 26 is used. While repairing to transmit the signal of the gate wiring 26, one capacity wiring 33 can be repaired by disconnecting the short-circuited portion with the lead wiring 43.

The capacitor wiring 33 includes a slit forming portion 33a where the slit 44 is formed and a slit non-forming portion 33b where the slit 44 is not formed, and the slit forming portion 33a and the slit non-forming portion 33b have the same line width. It is said. By doing so, the line width of the capacitor wiring 33 does not change between the slit forming portion 33a and the slit non-forming portion 33b, which is more suitable for facilitating manufacturing and space saving.

In addition, the transfer portion 45 and the routing wiring 43 are arranged in the same layer, and a gate insulating film 35 interposed between the routing portion 45 and the routing wiring 43, the gate wiring 26 and the capacitor wiring 33 is provided. Identical. In this way, the transfer portion 45 can be formed collectively when the lead wiring 43 is formed, which is preferable in reducing the manufacturing cost.

Further, the slit 44 is formed over a range exceeding at least a pair of the spanning portions 45 arranged at positions where the lead wiring 43 is sandwiched in the capacitor wiring 33. In this way, for example, when a short circuit occurs at the intersection of the gate wiring 26 and the routing wiring 43, the gate wiring 26 among the plurality of portions arranged with the slit 44 interposed in the capacitor wiring 33. In contrast, at least a portion short-circuited by the pair of spanning portions 45 is cut. At this time, the cutting position in the capacitor wiring 33 can be set to a positional relationship overlapping with the slit 44 in the extending direction of the capacitor wiring 33, thereby cutting a part of the capacitor wiring 33 linearly. Is possible. Therefore, it is possible to obtain an effect such as high reliability when part of the capacitor wiring 33 is cut off.

Further, a TFT (switching element) 24 having at least a gate electrode (first electrode) 24 a connected to the gate wiring 26 is provided. In this way, a short circuit occurring at the intersection between the gate wiring 26 and the routing wiring 43 and a short circuit occurring at the intersection between the capacitance wiring 33 and the routing wiring 43 can be repaired. Can be driven to.

In addition, the method for manufacturing the array substrate 20 according to the present embodiment includes a gate wiring 26 on the glass substrate (substrate) GS, and a capacitor wiring 33 that is arranged in parallel with the gate wiring 26 and adjacent to the gate wiring 26. The routing wiring 43 intersecting the gate wiring 26 and the capacitance wiring 33 with the gate insulating film 35 interposed therebetween, the slit 44 disposed at least in the portion of the capacitance wiring 33 across the routing wiring 43, and the routing wiring The gate wiring 26 and the capacitor wiring 33 are arranged via the gate insulating film 35 so as to be insulated from the gate wiring 26 and the capacitor wiring 33 and to be gated. A wiring forming step for forming a bridge portion 45 that is bridged between the wiring 26 and the capacitor wiring 33, an intersection between the gate wiring 26 and the routing wiring 43, When an inspection process for inspecting whether or not a short circuit has occurred at the intersection of the wiring 33 and the lead wiring 43 and when a short circuit has occurred at the intersection of the gate wiring 26 and the lead wiring 43, Of the gate wiring 26, a portion sandwiched between the routing wiring 43 and at least a pair of the crossing portions 45 is cut off and separated from the gate wiring 26, while the gate wiring 26 and the capacitor wiring 33 adjacent thereto are separated. At least a pair of the bridging portions 45 spanned between them are short-circuited with respect to the gate wiring 26 and the capacitor wiring 33, respectively. 26, at least a portion short-circuited by the pair of crossover portions 45 is cut so as to be separated from the capacitor wiring 33, and the capacitor wiring 33 and the lead wiring 43 are interchanged. When the short circuit has occurred in the portion cuts the portion of short-circuited with lead-wires 43 of the plurality of portions are arranged to sandwich the slit 44 in the capacitor line 33, it performs a repair process.

As mentioned above, although Embodiment 1 of this invention was shown, this invention is not restricted to the said embodiment, For example, the following modifications can also be included. In the following modifications, members similar to those in the above embodiment are denoted by the same reference numerals as those in the above embodiment, and illustration and description thereof may be omitted.

[Modification 1 of Embodiment 1]
A first modification of the first embodiment will be described with reference to FIG. Here, what changed the installation number of the transfer part 45-1 is shown.

As shown in FIG. 13, the number of installations of the transfer unit 45-1 according to this modification is about half that of the first embodiment described above. Specifically, the transfer part 45-1 is one of the divided parts 33a1-1 (the upper divided part in FIG. 13) of the pair of divided parts 33a1-1 constituting the slit forming part 33a-1 in the capacitor wiring 33-1. Only a portion that bridges the portion 33a1-1) and the gate wiring 26-1 adjacent thereto is formed, and the other divided portion 33a1-1 (the lower divided portion 33a1-1 in FIG. 13), No bridge is formed between adjacent gate lines 26-1. Even in such a configuration, each of the gate wirings 26-1 is bridged by the bridging portion 45-1 with respect to the adjacent one of the capacitance wirings 33-1. Even when the crossing point with the short circuit is short-circuited, it is possible to perform repair using the capacitive wiring 33-1 spanned over the bridging portion 45-1.

[Modification 2 of Embodiment 1]
A second modification of the first embodiment will be described with reference to FIG. Here, the configuration of the gate wiring 26-2 and the capacitor wiring 33-2 is changed.

As shown in FIG. 14, the gate wiring 26-2 and the capacitor wiring 33-2 according to the present modification are each formed with a slit 44-2 and without a slit 44-2. include. Specifically, the gate wiring 26-2 and the capacitor wiring 33-2 are formed in a plurality of lines alternately arranged in the Y-axis direction. However, the gate wiring 26-2 and the capacitor wiring 33- having the slit 44-2 are formed. 2 are arranged one by one, and then the gate wiring 26-2 and the capacitor wiring 33-2 not having the slit 44-2 are arranged one by one. That is, the gate wiring 26-2 and the capacitor wiring 33-2 are arranged in such a manner that two having a slit 44-2 and one having no slit are alternately arranged. The bridge portion 45-2 is formed so as to bridge the gate wiring 26-2 and the capacitor wiring 33-2 that have the slit 44-2 and the one that does not have the slit 44-2 adjacent thereto. ing. Accordingly, between the gate wiring 26-2 and the capacitor wiring 33-2 having the slits 44-2 adjacent to each other, the bridge portion 45-2 is not formed, and the slits 44 adjacent to each other are not formed. The bridge portion 45-2 is not formed between those having no -2. In the present modification, a large number of gate wirings 26-2 and a large number of capacitance wirings 33-2 each have a “first wiring” that does not have the slit 44-2 and a “second wiring that has the slit 44-2. ”And the routing wiring 43-2 intersecting with these are“ third wiring ”.

[Modification 3 of Embodiment 1]
A third modification of the first embodiment will be described with reference to FIG. Here, what changed the formation range (arrangement | positioning of the spanning part 45-3) of the slit 44-3 is shown.

As shown in FIG. 15, the slit 44-3 according to the present modification extends over a range not exceeding a pair of spanning portions 45-3 arranged at positions where the lead wiring 43-3 is sandwiched in the capacitance wiring 33-3. Is formed. Specifically, the slit 44-3 has both ends positioned closer to the routing wiring 43-3 than the pair of routing portions 45-3 in the X-axis direction, that is, the routing portion 45-3 and the routing wiring 43-. It is arranged at a position between three. Therefore, the bridge portion 45-3 bridges the slit non-formed portion 33b-3 and the gate line 26-3 in the capacitor line 33-3. In such a configuration, when the gate wiring 26-3 is short-circuited to the routing wiring 43-3, the short-circuited portion in the gate wiring 26-3 is separated and adjacent to the main body portion of the shorted gate wiring 26-3. The connecting portion 45-3 that bridges the capacitor wiring 33-3 is short-circuited to the gate wiring 26-3 and the capacitor wiring 33-3, and the gate is formed by the connecting portion 45-3 of the capacitor wiring 33-3. Repair is performed so as to separate the part short-circuited to the wiring 26-3. Here, when part of the capacitor wiring 33-3 is cut off, laser light is irradiated to the end of the slit 44-3 in the slit non-formed portion 33b-3 of the capacitor wiring 33-3. Is cut linearly along the X-axis direction from the lead wire 43-3 toward the opposite side to the side of the lead wire 43-3 and beyond the crossover portion 45-3 short-circuited to the gate wire 26-3, the crossover portion Cut linearly along the Y-axis direction toward the gate wiring 26-3 side that is short-circuited by 45-3 (cutting portion BP2-3). In this way, by cutting the non-slit portion 33b-3 of the capacitor wiring 33-3 into an L shape, the portion short-circuited with the gate wiring 26-3 by the bridge portion 45-3 is replaced with the original capacitor wiring. It can be separated from 33-3 and made electrically independent.

<Embodiment 2>
A second embodiment of the present invention will be described with reference to FIG. 16 or FIG. In the second embodiment, the arrangement of the transfer unit 145 is changed. In addition, the overlapping description about the same structure, an effect | action, and effect as above-mentioned Embodiment 1 is abbreviate | omitted.

As shown in FIG. 16, the transfer portions 145 according to the present embodiment are arranged in a staggered manner when viewed in plan. Specifically, of a pair of capacitor wirings 133 that are adjacent to each other with the gate wiring 126 interposed therebetween, a pair of bridging portions 145 (hereinafter referred to as the first wiring section 145) spanned between one capacitor wiring 133 and the gate wiring 126. A pair of bridge portions 145A forming a pair) and a pair of bridge portions 145 (hereinafter referred to as a second pair of bridge portions 145) bridged between the other capacitor wiring 133 and the gate wiring 126. In this case, they are arranged at positions shifted from each other in the X-axis direction, that is, in the extending direction of the gate wiring 126 and the capacitor wiring 133. Therefore, the pair of the bridging portions 145A and the pair of the bridging portions 145B that form the first group spanned over the same gate wiring 126 or the capacitor wiring 133 extend along the Y-axis direction. They are not arranged in a straight line, but are arranged in a staggered (zigzag) pattern.

Specifically, of the pair of spanning portions 145A forming the first set, the distance between one spanning portion 145A and one end of the slit 144 is the other spanning as shown in FIG. The distance between the portion 145A and the other end of the slit 144 is different. Of the pair of spanning portions 145B forming the second set, the distance between one spanning portion 145B and one end of the slit 144 is the other spanning portion 145A forming the first set. Is substantially equal to the distance between the other end portion of the slit 144 and the distance between the other span portion 145B and the other end portion of the slit 144 is one of the above-mentioned first set. It is approximately equal to the distance between the span 145A and one end of the slit 144. Of the pair of gate wirings 126 adjacent to each other with the capacitor wiring 133 interposed therebetween, the pair of bridging portions 145 spanned between one gate wiring 126 and the capacitor wiring 133, the other gate wiring 126, and the above-described gate wiring 126. It can also be said that the pair of bridge portions 145 spanned between the capacitor wiring 133 are arranged at positions shifted from each other in the X-axis direction, that is, the extending direction of the gate wiring 126 and the capacitor wiring 133.

By the way, when patterning the transfer part 145, patterning failure may occur. In this case, as shown in FIG. 17, the size and shape of the transfer part 145 are not normal and normal. There is a possibility that it is formed over a wider range than the one. Even in such a case, as described above, the spanning portion 145A forming the first set and the spanning portion 145B forming the second set are arranged at positions shifted in the X-axis direction. The distance between 145A and 145B is secured sufficiently large, and even if a patterning failure occurs in any of the transfer portions 145, the transfer portion 145 in which the failure has occurred is adjacent to the adjacent transfer portion 145. In contrast, short-circuiting is unlikely to occur. Thereby, when repairing the gate wiring 126 and the capacitor wiring 133, the function of each bridge portion 145 can be reliably exhibited.

As described above, according to the present embodiment, one bridge portion 145A that bridges between the gate line 126 and one of the pair of capacitor lines 133, and the gate line 126 and the pair of capacitors. The other crossing part 145 </ b> B that bridges the other wiring line 133 among the wiring lines 133 is arranged at a position shifted from each other in the extending direction of the gate line 126. In this way, it is assumed that one of the crossover portions 145A and the other of the crossover portions 145A and the other crossover portion 145B are disposed at the same position in the extending direction of the gate wiring 126. Since the distance between the transfer part 145B is relatively large, it is difficult for one transfer part 145B and the other transfer part 145B to be short-circuited.

In addition, one cross-over portion 145A that bridges between the gate wiring 126 of the pair of gate wirings 126 arranged with the capacitance wiring 133 and the capacitance wiring 133 interposed therebetween, and the capacitance wiring 133 and the pair of gate wirings The other bridging portion 145B that bridges between the other gate wiring 126 of 126 is arranged at a position shifted from each other in the extending direction of the capacitor wiring 133. In this way, if compared with the case where one bridge 145A and the other bridge 145B are arranged at the same position in the extending direction of the capacitor wiring 133, the one bridge 145A and the other bridge 145B are compared with each other. Since the distance between the transfer part 145B is relatively large, it is difficult for one transfer part 145A and the other transfer part 145B to be short-circuited.

<Embodiment 3>
A third embodiment of the present invention will be described with reference to FIG. In the third embodiment, the configuration of each intersection of the gate wiring 226 and the capacitor wiring 233 with respect to the plurality of routing wirings 243 is shown. In addition, the overlapping description about the same structure, an effect | action, and effect as above-mentioned Embodiment 1 is abbreviate | omitted.

In the present embodiment, the configuration of each crossing portion of the two

routing wirings

243A and 243B, the gate wiring 226, and the capacitance wiring 233 among the plurality of routing wirings 243 parallel to each other will be described. In the following, of the two

routing wirings

243A and 243B, the one shown on the left side in FIG. 18 is referred to as a first routing wiring (third wiring) 243A, and the one shown on the right side in FIG. (Fourth wiring) 243B.

First, the configuration of the intersection of the first lead wiring 243A, the gate wiring 226, and the capacitor wiring 233 is substantially the same as in the first embodiment. That is, as shown in FIG. 18, a slit 244 is formed in a portion of the capacitor wiring 233 that straddles the first routing wiring 243A, and a pair of the wirings 233A that are disposed at positions sandwiching the first routing wiring 243A. The intermediate portion 245 bridges between the adjacent gate wiring 226 and the capacitor wiring 233. On the other hand, the configuration of the intersection of the second routing wiring 243B, the gate wiring 226, and the capacitance wiring 233 will be described. The second slit 46 is formed in the gate wiring 226 across the second routing wiring 243B. Is formed. Further, the adjacent gate wiring 226 and the capacitor wiring 233 are bridged by the second bridge 47 arranged in pairs at positions sandwiching the second routing wiring 243B. Therefore, in the present embodiment, the capacitor wiring 233 having the slit 244 at the intersection with the first routing wiring 243A and the gate wiring 226 having the second slit 47 at the intersection with the second routing wiring 243B are provided. It will be arranged in an alternating form. Since each of the gate wiring 226 and the capacitor wiring 233 has the slit 244 or the second slit 46, the wiring resistance difference between the

wirings

226 and 233 is different from that in the first embodiment. Is getting smaller.

As shown in FIG. 18, the second slit 46 included in the gate wiring 226 has a planar shape and a formation range substantially the same as the slit 244 included in the capacitor wiring 233. Further, the formation range and arrangement of the second transfer portion 47 are substantially the same as those of the transfer portion 245. Therefore, the second slit 46 is formed over a range exceeding the pair of second transfer portions 47 arranged at positions where the second lead wiring 243 </ b> B is sandwiched in the gate wiring 226. A pair of second bridging portions 47 are formed so as to bridge between the gate wiring 226 and a pair of adjacent capacitor wirings 233 across the gate wiring 226.

In such a configuration, when a short circuit occurs at the intersection between each routing wiring 243 and the gate wiring 226 or the capacitor wiring 233, the repair is performed as follows. The repair method related to the first lead wiring 243A is as described in the first embodiment, and therefore the description thereof will be omitted. Hereinafter, only the repair method related to the second lead wiring 243B will be described. When a short circuit (short circuit location SP4) occurs at the intersection between the second routing wiring 243B and the capacitance wiring 233, the second wiring wiring 243B shorted in the X-axis direction of the capacitance wiring 233 and a pair of Laser light is applied to two positions between the second crossing section 47 and linearly cut along the Y-axis direction so as to cross the capacitive wiring 233 at the position to form a cut section BP4. . Thereby, the short circuit location in the capacity wiring 233 is separated from the main body portion.

On the other hand, when the laser beam is irradiated to the portion of the second transfer portion 47 that overlaps the capacitor wiring 233 in which the short circuit occurs and the portion that overlaps the gate wiring 226 in plan view, When the gate insulating film is melted, the overlapping portions in the second transfer portion 47 are short-circuited to the gate wiring 226 and the capacitor wiring 233 to form the short-circuit portion SP5. As a result, the main body portion (the portion excluding the short-circuited portion) of the capacitor wiring 233 short-circuited with the second routing wiring 243B is electrically connected to a part of the adjacent gate wiring 226 (dividing portion 226a1). be able to. Further, of the two divided portions 226a1 arranged across the second slit 46 in the gate wiring 226, the laser light is irradiated to the divided portion 226a1 short-circuited with the capacitor wiring 233 by the second bridge portion 47. The cutting part BP5 is formed by cutting and cutting this. Thereby, the division part 226a1 short-circuited with the capacitor wiring 233 by the second transfer part 47 can be separated from the original gate wiring 226 and electrically independent.

As a result of the above repair, the signal supplied to the capacitor wiring 233 short-circuited to the second routing wiring 243 </ b> B is transmitted from the main body portion of the capacitance wiring 233 to the adjacent gate wiring via the second bridging portion 47. By diverting to the dividing unit 226a1 which is a part of the H.226 and flowing again to the main body portion of the capacitive wiring 233 via the second transfer unit 47, normal transmission is achieved.

As described above, according to the present embodiment, the gate wiring 226 and the capacitor wiring 233 are arranged via the gate insulating film in parallel with the first routing wiring 243A and adjacent to the first routing wiring 243A. The second routing wiring (fourth wiring) 243B intersecting with the second slit 46 sandwiched between at least the second routing wiring 243B of the gate wiring 226 and the second routing wiring 243B are sandwiched. At least a pair is arranged at the position, and the gate wiring 226 and the capacitor wiring 233 are arranged via a gate insulating film so as to be insulated from the gate wiring 226 and the capacitor wiring 233, and at the same time, the gate wiring 226 and the capacitor And a second bridge portion 47 that is bridged between the wiring 233 and the wiring 233. In this way, for example, when a short circuit occurs at the intersection between the capacitive wiring 233 and the second routing wiring 243B, the second routing wiring 243B of the capacitance wiring 233 is sandwiched and at least a pair of the second routing wiring 243B is interposed. The portion sandwiched between the two transfer portions 47 is cut and separated from the capacitor wiring 233. On the other hand, at least a pair of second bridging portions 47 spanned between the capacitor wiring 233 and the gate wiring 226 adjacent thereto are short-circuited to the gate wiring 226 and the capacitor wiring 233, respectively. Further, among the plurality of portions arranged with the second slit 46 interposed in the gate wiring 226, a portion short-circuited by at least the pair of second bridging portions 47 with respect to the capacitor wiring 233 is cut to form a gate. Disconnect from the wiring 226. As described above, a signal or the like can be transmitted to the capacitor wiring 233 by using part of the gate wiring 226.

In this way, the slit 44 is formed in the capacitor wiring 233 and the second slit 46 is formed in the gate wiring 226, respectively. The difference in wiring resistance that can occur between the gate wiring 226 and the capacitor wiring 233 can be reduced.

For example, in the case where a short circuit occurs between one of the plurality of portions arranged across the second slit 46 in the gate wiring 226 and the second routing wiring 243B, the first in the gate wiring 226 By cutting a portion short-circuited with the second routing wiring 243B among a plurality of portions arranged with the two slits 46 interposed therebetween, gates are used by utilizing a portion not short-circuited with the second routing wiring 243B. A signal or the like can be transmitted to the wiring 226.

A plurality of gate wirings 226 and capacitor wirings 233 are arranged in an alternating manner, and the crossover portion 45 includes a gate wiring 226 and a pair of capacitor wirings 233 adjacent to each other with the gate wiring 226 interposed therebetween. Whereas each pair is formed so as to bridge between each other, the second bridging portion 47 is formed between the capacitor wiring 233 and a pair of adjacent gate wirings 226 across the capacitor wiring 233. At least one pair is formed so as to be bridged. In this way, when the gate wiring 226 is short-circuited with the first routing wiring 243A, any of the pair of capacitor wirings 233 adjacent to the gate wiring 226 can be used for repair. Even when the capacitor wiring 233 is short-circuited with the second lead wiring 243B, any one of the pair of gate wirings 226 adjacent to the capacitor wiring 233 can be used for repair. The degree is extremely high.

<Embodiment 4>
A fourth embodiment of the present invention will be described with reference to FIG. In this Embodiment 4, what changed the arrangement | positioning in the lamination direction of the transfer part 345 is shown. In addition, the overlapping description about the same structure, an effect | action, and effect as above-mentioned Embodiment 1 is abbreviate | omitted.

As shown in FIG. 18, the transfer portion 345 according to the present embodiment is made of the same material (ITO or the like) as the pixel electrode 25 described in the first embodiment, and is formed in the same layer in the same process in the manufacturing process. Yes. Therefore, the transfer portion 345 is disposed on the upper layer side of the protective film 338, and between the gate wiring 326 and the capacitor wiring 333 to be transferred, the gate insulating film 335, the interlayer insulating film 337, and the protective film With the film 338 interposed, an insulating state between the gate wiring 326 and the capacitor wiring 333 is maintained. Even in such a configuration, when the transfer portion 345 is short-circuited to the gate wiring 326 and the capacitor wiring 333 at the time of repair, the gate insulating film 335, the interlayer insulating film 337, and the protective film are irradiated by irradiating laser light. It is possible to melt the 338 and connect the transfer portion 345 to the gate wiring 326 and the capacitor wiring 333.

<Embodiment 5>
A fifth embodiment of the present invention will be described with reference to FIGS. In the fifth embodiment, one having a spare wiring 48 is shown. In addition, the overlapping description about the same structure, an effect | action, and effect as above-mentioned Embodiment 1 is abbreviate | omitted.

In the non-display area NAA of the array substrate 420 according to the present embodiment, as shown in FIG. 20, a plurality of spare wirings 48 are formed for repairing when a defect such as disconnection occurs in the source wiring 427. ing. The spare wiring 48 is formed so as to surround three ends of the non-display area NAA having a frame shape except for the end on the gate driver GD side, and is connected to the end on the source driver SD side. The other end of the source wiring 427 crosses each other while intersecting the opposite ends. The spare wiring 48 is made of the same material as the gate wiring 426 and the capacitor wiring 433 and is formed in the same layer in the same process in the manufacturing process. Therefore, as shown in FIG. 22, the spare wiring 48 is kept insulated from the source wiring 427 through the gate insulating film 435 at the intersection of the source wiring 427.

In the inspection process, if it is found that any of the source wirings 427 is disconnected, for example, laser light is irradiated to two intersecting portions of the disconnected source wiring 427 and the spare wiring 48 in the repair process. Thus, the two are short-circuited (see FIG. 20). Then, by supplying a signal or the like to be supplied to the source wiring 427 to the short-circuited spare wiring 48, the signal can be transmitted ahead (on the opposite side to the source driver SD side) in the source wiring 427. It is. Hereinafter, the configuration of the intersection of the spare wiring 48 and each source wiring 427 will be described in detail.

As shown in FIG. 21, a slit 444 is formed in either the odd-numbered or even-numbered source wiring 427 among the source wirings 427 arranged in parallel. Accordingly, on the array substrate 420, there are a source wiring 427 in which the slit 444 is not formed (hereinafter referred to as a first source wiring 427A) and a source wiring 427 in which the slit 444 is formed (hereinafter referred to as a second source wiring 427B). A plurality of lines are arranged alternately in the X-axis direction. The slit 444 is formed over a predetermined range across the spare wiring 48 in the second source wiring 427B. Specifically, in the second source wiring 427B, an overlapping portion that overlaps the spare wiring 48 in a plan view, The overlapping portion is formed in a range covering a pair of non-overlapping portions sandwiching the overlapping portion from both sides and not overlapping with the spare wiring 48. The slit 444 is formed of an elongated opening extending linearly in parallel with the Y-axis direction, that is, the extending direction of the source wiring 427, and both ends thereof have a semicircular shape when viewed in a plane. In the second source wiring 427B, the slit forming portion 427a in which the slit 444 is formed is divided into two, and these are defined as two divided portions 427a1. The second source wiring 427B includes a slit forming portion 427a and a slit non-forming portion 427b in which the slit 444 is not formed. The slit forming portion 427a and the slit non-forming portion 427b have the same line width. The Therefore, the capacity wiring 33 has a substantially uniform size over almost the entire length, with the line width hardly changing in the middle. In the present embodiment, a large number of source wirings 427 include a mixture of “first wirings” that do not have slits 444 and “second wirings” that have slits 444, and spare wirings 48 that intersect these. Is the “third wiring”.

FIG. 21 shows the gap between the second source wiring 427B in which a plurality of slits 444 are arranged in a line alternately in the X-axis direction and the first source wiring 427A in which no slit 444 is formed. As described above, the transfer unit 445 is set over. The bridge portion 445 is configured to extend along the X-axis direction, and is bridged between the two

source wires

427A and 427B adjacent to each other. The bridge portion 445 overlaps the

source wirings

427A and 427B whose both ends are adjacent to each other in a plan view. As shown in FIG. 23, the transfer portion 445 is made of the same material as the gate wiring 426 and the spare wiring 48 and is formed in the same layer in the same process in the manufacturing process. That is, the bridge portion 445 has conductivity similar to the gate wiring 426 and the spare wiring 48, but is disposed on the lower layer side with respect to the source wirings 427 A and 427 B via the gate insulating film 435. In general, the source wiring 427 is kept in an insulated state. However, when laser light or the like is irradiated on a portion of the transfer portion 445 that overlaps each of the

source wirings

427A and 427B in plan view, the gate insulating film 435 is melted at the irradiated portion, so that The overlapping portion and the

source wirings

427A and 427B are short-circuited.

As shown in FIG. 21, a pair of the bridging portions 445 is arranged at a position sandwiching the spare wiring 48 in the extending direction between

adjacent source wirings

427A and 427B, and does not have a slit 444. Two sets are arranged for each first source wiring 427A and each second source wiring 427B having slits 444. That is, four transfer portions 445 are provided for each of the first source wiring 427A and the second source wiring 427B. The pair of spanning portions 445 forming one set is arranged at a position closer to the spare wiring 48 than both ends of the slit 444 in the X-axis direction, that is, a position between the end of the slit 444 and the spare wiring 48. Has been. In other words, the slit 444 is formed over a range that exceeds the pair of bridge portions 445 that sandwich the spare wiring 48 in the second source wiring 427B. Accordingly, the bridge portion 445 bridges the slit forming portion 427a and the first source wire 427A of the second source wiring 427B, and more specifically, of the two divided portions 427a1 constituting the slit forming portion 427a. And the first source wiring 427A are bridged. That is, the bridging portion 445 is arranged for each of the two divided portions 427a1 with respect to the second source wiring 427B. The pair of crossing portions 445 that form one set are separated from each other in the X-axis direction with respect to the first source wiring 427A adjacent to the other divided portion 427a1 on the side opposite to the other divided portion 427a1 side. It will be bridged at the position. A pair of bridging portions 445 that bridges one dividing portion 427a1 and the first source wiring 427A, and a pair of bridging portions 445 that bridges the other dividing portion 427a1 and the first source wiring 427A opposite to the above. Are arranged at substantially the same position in the X-axis direction.

In such a configuration, when a short circuit occurs at the intersection between the spare wiring 48 and the source wiring 427, the repair is performed as follows. For example, when a short circuit occurs at the intersection between the spare wiring 48 and the first source wiring 427A, the shorted spare wiring 48 and the pair of bridge portions 445 in the X-axis direction of the first source wiring 427A The short-circuited portion is separated from the main body portion of the first source wiring 427A by irradiating the laser beam to the two positions between and cutting. On the other hand, the laser beam is irradiated to the portion of the bridge portion 445 that overlaps with the first source wiring 427A in which the short circuit occurs and the portion that overlaps with the second source wiring 427B in plan view. By melting the gate insulating film 435 at the irradiation location, the overlapping portions in the transfer portion 445 are short-circuited to the

source wirings

427A and 427B. Further, among the two divided portions 427a1 arranged across the slit 444 in the second source wiring 427B, the divided portion 427a1 short-circuited with the first source wiring 427A by the transfer portion 445 is irradiated with laser light. Cut this off. As described above, a signal supplied to the first source wiring 427A short-circuited to the spare wiring 48 is a part of the second source wiring 427B adjacent from the main body portion of the first source wiring 427A via the bridge portion 445. By diverting to a certain division part 427a1 and flowing again to the main body portion of the first source wiring 427A via the transfer part 445, normal transmission is achieved. In addition, the spare wiring 48 short-circuited to the first source wiring 427A can be used for repair when the other source wiring 427 is disconnected.

<Embodiment 6>
A sixth embodiment will be described with reference to FIG. In the sixth embodiment, a repair wiring 49 is provided separately from the gate wiring 526 and the capacitor wiring 533.

In this embodiment, as shown in FIG. 24, a repair wiring 49 for repairing each

wiring

526, 533 is formed between the adjacent gate wiring 526 and the capacitor wiring 533. The repair wiring 49 extends in parallel to the gate wiring 526 and the capacitor wiring 533 and extends over a predetermined range across the lead wiring 543. A pair of repair wirings 49 are arranged at positions sandwiching the respective gate wirings 526, and a pair of repair wirings 49 are disposed at positions sandwiching the respective capacitive wirings 533. That is, a pair of repair wirings 49 are individually arranged adjacent to each other in the Y-axis direction in each gate wiring 526 and each capacitance wiring 533. The repair wiring 49 is made of the same material as the gate wiring 526 and the capacitor wiring 533 and is formed in the same layer in the same process in the manufacturing process. Note that slits 544 are formed in all gate wirings 526 and capacitor wirings 533 so as to straddle the routing wirings 543.

Further, a bridge portion 545 is bridged between the adjacent repair wiring 49, the gate wiring 526, and the capacitor wiring 533. Therefore, when the gate wiring 526 or the capacitor wiring 533 is short-circuited to the routing wiring 543, the short-circuited portion is separated from the main body portion, and the repair wiring 49 adjacent to the main body portion is connected to the transfer portion 545. By short-circuiting, it is possible to transmit a signal or the like using the repair wiring 49 as a bypass. Thereby, since the signal etc. can be transmitted using both the short-circuited gate wiring 526 or the main body portion of the capacity wiring 533 and the repair wiring 49, the gate wiring 526 or the capacity wiring 533 and the wiring which do not require repair are transmitted. The effect that resistance becomes equal is obtained.

<Embodiment 7>
A seventh embodiment will be described with reference to FIG. The seventh embodiment should also be referred to as a modification of the above-described sixth embodiment, and shows a case where repair wiring 649 is provided using a part of the light shielding portion 50.

In this embodiment, as shown in FIG. 25, the light shielding portion 50 is formed adjacent to the gate wiring 626. The light shielding portion 50 is made of a conductive metal material, and is formed in a solid shape over a predetermined range. A slit 51 is formed in a portion of the light shielding portion 50 adjacent to the gate wiring 626, thereby forming a repair wiring 649 that straddles the lead wiring 643. Between the repair wiring 649 and the gate wiring 626, a pair of spanning portions 645 is spanned. As a result, even when the gate wiring 626 is short-circuited to the routing wiring 643, the repair can be performed by using the repair wiring 649 and the transfer portion 645.

<Eighth embodiment>
An eighth embodiment will be described with reference to FIG. In the eighth embodiment, a configuration that does not use a bridge is shown.

In the present embodiment, as shown in FIG. 26, the slits 744 are formed in all of the gate wiring 726 and the capacitor wiring 733, and the slits 52 are also formed in the routing wiring 743 that intersects these. Yes. Therefore, when a short circuit occurs at the intersection between the gate wiring 726 or the capacitor wiring 733 and the lead wiring 743, the gate wiring 726 or the capacitor wiring 733 and the lead wiring 743 are respectively located at two positions sandwiching the short circuit portion. Repair can be performed by cutting the divided portion.

<Ninth Embodiment>
A ninth embodiment will be described with reference to FIG. The ninth embodiment should be referred to as a modification of the above-described eighth embodiment, and shows a configuration in which a plurality of

slits

844 and 852 are formed.

In this embodiment, as shown in FIG. 27, three slits 844 are formed in each of the gate wiring 826 and the capacitor wiring 833, and three slits 852 are also formed in the lead wiring 843.

<Other embodiments>
The present invention is not limited to the embodiments described with reference to the above description and drawings. For example, the following embodiments are also included in the technical scope of the present invention.
(1) In the first and second embodiments, the case where the gate wiring is the “first wiring” having no slit and the capacitor wiring is the “second wiring” having the slit is shown. Of course, it is also possible to adopt a configuration in which a slit is formed in the wiring and this is used as a “second wiring”, and this is used as a “first wiring” without forming a slit in the capacitor wiring.

(2) In the above-described first and second embodiments, the case where the slits straddling the lead wiring is formed only on the capacitor wiring is shown. However, the slit straddling the lead wiring is formed on all of the gate wiring and the capacitor wiring. It doesn't matter.

(3) In the above-described third embodiment, the case where the gate wiring is the “first wiring” having the second slit and the capacitor wiring is the “second wiring” having the slit is shown. It is of course possible to adopt a configuration in which a slit is formed as a “second wiring” and a second slit is formed in the capacitor wiring as a “first wiring”.

(4) In the above-described third embodiment, the case where the slit extending over the first routing wiring is formed only on the capacitor wiring is shown. However, the slit extending over the first routing wiring is formed on all of the gate wiring and the capacitance wiring. It doesn't matter if you do. Similarly, a second slit that straddles the second lead wiring may be formed in all of the gate wiring and the capacitor wiring.

(5) In the above-described third embodiment, the configuration related to the intersection of the two routing wirings, the gate wiring, and the capacitance wiring is illustrated, but the intersection of three or more routing wirings, the gate wiring, and the capacitance wiring The technique can be applied to the portions as in the third embodiment. Specifically, as many as the number of routing lines crossing the gate wiring and the capacity wiring, slits are formed so as to straddle each routing line, and a pair of bridging portions are provided at positions straddling each routing line. What is necessary is just to form.

(6) The configuration described in each modification of the first embodiment can be applied to the fifth embodiment described above.

(7) In the first to fifth embodiments described above, the capacitor wiring or the gate wiring has been shown to have the same line width in the slit forming portion and the slit non-forming portion. A configuration in which the width is changed is also possible.

(8) In the first to fifth embodiments described above, the slit forming range extends beyond the pair of spanning portions. However, the slit forming range is set to be equal to the distance between the pair of spanning portions. It is also possible to set it to be shorter than the distance between the pair of spanning parts.

(9) In the first to fifth embodiments described above, the cold cathode tube is used as the light source of the backlight device that constitutes the liquid crystal display device, but other light sources such as a hot cathode tube and an LED are also used. It is included in the present invention.

(10) In Embodiments 1 to 5 described above, the direct type is exemplified as the backlight device included in the liquid crystal display device, but the present invention includes one using an edge light type backlight device.

(11) In the first to fifth embodiments described above, a transmissive liquid crystal display device including a backlight device as an external light source has been exemplified. However, the present invention is a reflective liquid crystal display that performs display using external light. The present invention can also be applied to a device, in which case the backlight device can be omitted.

(12) In Embodiments 1 to 5 described above, the TFT is used as the switching element of the liquid crystal display device. In addition to the liquid crystal display device for color display, the present invention can be applied to a liquid crystal display device for monochrome display.

(13) In the first to fifth embodiments described above, the liquid crystal display device using the liquid crystal panel as the display panel is exemplified, but the present invention is also applied to a display device using another type of display panel (PDP, organic EL panel, etc.). The invention is applicable. In that case, the backlight device can be omitted.

10 ... Liquid crystal display device (display device), 12 ... Backlight device (illumination device), 20 ... Array substrate (element substrate), 21 ... CF substrate (counter substrate), 22 ... Liquid crystal layer, 24 ... TFT (switching element), 24a ... Gate electrode (electrode), 26, 126, 226, 326 ... Gate wiring (first wiring), 33, 133, 233, 333,. .Capacitive wiring (second wiring), 33a ... slit forming portion, 33b ... slit non-forming portion, 35, 335, 435 ... gate insulating film (insulating layer), 43, 243 ... routing Wiring (third wiring), 44, 144, 244, 444 ... slit, 45, 145, 245, 345, 445 ... spanning part, 46 ... second slit, 47 ... first 2 spanning sections, 48 ... preliminary wiring (third wiring), 145A ... a pair of spanning sections (one bridging section) forming the first set, 45B ... a pair of spanning portions (the other spanning portion) forming the second set, 243A ... first routing wiring (third wiring), 243B ... second routing wiring (fourth) Wiring), 337 ... interlayer insulating film (insulating layer), 338 ... protective film (insulating layer), 427A ... first source wiring (first wiring), 427B ... second source wiring (first) 2 wiring), GS ... glass substrate (substrate), TV ... TV receiver

Claims

A first wiring;
A second wiring arranged in parallel with the first wiring and adjacent to the first wiring;
A third wiring that intersects the first wiring and the second wiring through an insulating layer;
A slit disposed in a portion straddling at least the third wiring among the second wiring;
A pair of at least a pair of positions sandwiching the third wiring, wherein the first wiring and the second wiring are arranged with respect to the first wiring and the second wiring through an insulating layer; An element substrate comprising: an insulating portion that is insulated and is bridged between the first wiring and the second wiring.
2. The element substrate according to claim 1, wherein a plurality of the first wirings and the second wirings are arranged alternately.
3. The element substrate according to claim 2, wherein at least a pair of the bridging portions are formed so as to bridge between the first wiring and a pair of the second wirings adjacent to each other with the first wiring interposed therebetween. .
One of the bridging portions that bridges between the first wiring and one of the pair of second wirings, and the other of the first wiring and the pair of second wirings 4. The element substrate according to claim 3, wherein the other bridging portion that bridges the second wiring is arranged at a position shifted from each other in the extending direction of the first wiring.
One of the bridging portions that bridges between the first wiring of one of the pair of the first wirings arranged across the second wiring and the second wiring, the second wiring, 4. The other bridging portion that bridges between the other first wiring of the pair of first wirings is disposed at a position shifted from each other in the extending direction of the second wiring. Alternatively, the element substrate according to claim 4.
The second wiring includes a slit forming portion where the slit is formed and a slit non-forming portion where the slit is not formed, and the slit forming portion and the slit non-forming portion have the same line width. The element substrate according to any one of claims 1 to 5.
The bridging portion and the third wiring are arranged in the same layer, and the insulating layer interposed between the bridging portion and the third wiring and the first wiring and the second wiring is the same The element substrate according to claim 1, wherein:
The said slit is formed over the range exceeding the at least one pair of said bridge | crossing part arrange | positioned in the position which pinches | interposes the said 3rd wiring in the said 2nd wiring. Element substrate.
A fourth wiring parallel to the third wiring and adjacent to the third wiring and intersecting the first wiring and the second wiring through an insulating layer;
A second slit disposed in a portion straddling at least the fourth wiring among the first wiring;
At least a pair is arranged at a position sandwiching the fourth wiring, and the first wiring and the second wiring are arranged with respect to the first wiring and the second wiring through an insulating layer. 9. The element substrate according to claim 1, further comprising a second bridge portion that is insulated and bridges between the first wiring and the second wiring. 10.
A plurality of the first wirings and the second wirings are arranged alternately in a line,
Whereas the bridging portion is formed at least one pair in a manner of bridging between the first wiring and a pair of adjacent second wirings across the first wiring,
The at least one pair of said 2nd bridge | crossover part is formed in the form which bridge | crosses between said 2nd wiring and a pair of said 1st wiring adjacent on both sides of said 2nd wiring, respectively. Element substrate.
The element substrate according to claim 1, further comprising a switching element having at least an electrode connected to the first wiring or the second wiring.
An element substrate according to any one of claims 1 to 11, a counter substrate facing the element substrate, and a liquid crystal layer sealed between the element substrate and the counter substrate. Display device.
The display device according to claim 12, further comprising an illumination device that irradiates light toward the element substrate and the counter substrate.
A television receiver comprising the display device according to claim 12 or 13.
On the substrate, the first wiring, the second wiring parallel to the first wiring and adjacent to the first wiring, and the first wiring and the second wiring through an insulating layer At least a pair of third wirings intersecting each other, a slit disposed in at least a portion of the second wiring across the third wiring, and a position sandwiching the third wiring, the first wiring And the second wiring being arranged via an insulating layer so as to be insulated from the first wiring and the second wiring and to be bridged between the first wiring and the second wiring. A wiring forming process for forming a portion;
An inspection process for inspecting whether or not a short circuit has occurred at the intersection between the first wiring and the third wiring and the intersection between the second wiring and the third wiring;
When a short circuit occurs at the intersection between the first wiring and the third wiring, a portion of the first wiring that sandwiches the third wiring and is sandwiched between at least a pair of the bridging portions Is cut off from the first wiring, and at least a pair of the bridging portions spanned between the first wiring and the second wiring adjacent to the first wiring are separated from the first wiring and the second wiring. Short-circuiting each of the wirings, and further cutting a portion short-circuited by at least a pair of the bridging portions with respect to the first wiring out of a plurality of portions arranged across the slit in the second wiring. A plurality of portions arranged so as to sandwich the slit in the second wiring when a short circuit occurs at the intersection of the second wiring and the third wiring. Of the above Cutting the wiring and short-circuit portion, a manufacturing method of an element substrate for performing a repair step.