JP6827309B2 - Manufacturing method of liquid crystal display panel and manufacturing method of liquid crystal display device - Google Patents

Description

The techniques disclosed in the present specification relate to liquid crystal display panels and liquid crystal display devices.

As a display method of a liquid crystal display device, a twisted nematic (TN) method has been widely used. However, these days, a transverse electric field method is used, which is a method in which a voltage is applied between the upper electrode and the lower electrode to generate an electric field substantially horizontal to the liquid crystal panel, and the electric field drives the liquid crystal molecules in the horizontal direction. It is being done.

Since the lateral electric field method is advantageous for a wide viewing angle, high definition, and high brightness, it is expected that it will become the mainstream method used for small and medium-sized liquid crystal panels such as smartphones and tablets in the future. ..

As the lateral electric field method, an in-plane switching (IPS: registered trademark) method and a fringe field switching (FFS) method are known.

In the FFS method, an insulating film is arranged between the upper electrode having a slit and the lower electrode. Then, in the FFS method, an electric field is generated from the slit of the upper electrode toward the upper liquid crystal, so that the liquid crystal is driven according to the electric field.

In the display region of the active matrix type liquid crystal display device, a thin film transistor is arranged on the lower layer side of the lower electrode via a protective insulating film. An arbitrary control signal from the outside, that is, a voltage signal is given to the thin film transistor via a signal line. Then, by the on-operation of the thin film transistor, a predetermined voltage is applied to the lower electrode or the upper electrode through the contact hole formed in the protective insulating film.

A liquid crystal display panel having such a configuration is exemplified in Patent Document 1 (Japanese Patent Laid-Open No. 2009-031468) or Patent Document 2 (Japanese Patent Laid-Open No. 2014-106437).

Japanese Unexamined Patent Publication No. 2009-031468 Japanese Unexamined Patent Publication No. 2014-106437

In the case of the FFS type liquid crystal display device, different potentials are applied to the plurality of upper electrodes located on the uppermost layer according to the display. Here, if there is a short circuit between the upper electrodes, a display failure occurs because the upper electrodes do not have a normal potential.

In order to repair the above display defect, there is a method of removing the short-circuited region by irradiating the short-circuited region between the upper electrodes with a laser beam.

As the laser beam used for removing the short-circuit region between the upper electrodes, indium tin oxide (tin-doped indium oxide, or indium tin oxide, that is, ITO), which is generally used as the upper electrode, is oxidized. An ultraviolet laser that is well absorbed by a transparent conductive film such as indium zinc (zinc-doped indium electrode, or indium zinc oxide, that is, IZO) is used.

On the other hand, the same transparent conductive film as the upper electrode is used as the material of the lower electrode. Therefore, the lower electrode absorbs the ultraviolet laser well. In addition, an interlayer insulating film such as SiN formed between the lower electrode and the upper electrode also absorbs the ultraviolet laser well.

Therefore, when laser light is irradiated to remove the short-circuit region between the upper electrodes, the structure around the short-circuit region, that is, the upper electrodes at both ends of the short-circuit region, the interlayer insulating film located directly under the short-circuit region, and the short-circuit region The lower electrode located directly under the is also damaged. Then, due to the damage, a short circuit may occur between the upper electrode and the lower electrode. Then, since the upper electrode does not have a normal potential, display failure may occur.

The technique disclosed in the present specification has been made to solve the problems described above, and is a technique capable of removing the short-circuited region while suppressing damage to the structure around the short-circuited region. It is about.

The first aspect of the technique disclosed in the present specification is a lower electrode, an interlayer insulating film provided on the upper surface of the lower electrode, an upper surface of the interlayer insulating film, and the lower electrode in a plan view. A plurality of pixel portions each including an upper electrode provided at an overlapping position are formed, and a short-circuit region is formed which is a region for short-circuiting the adjacent upper electrodes of the upper electrodes in each of the plurality of pixel portions. In this case, the removal region is partially formed at a position overlapping the short-circuit region in the plan view, and the removal region is irradiated with light in the wavelength band absorbed by the removal region to form the removal region in the plan view. The removal region is removed together with the overlapping short-circuit region. The wavelength band of light absorbed by the removal region is different from the wavelength band of light absorbed by the lower electrode, the interlayer insulating film, the upper electrode, and the short-circuit region.

The second aspect of the technique disclosed in the present specification is to manufacture a liquid crystal display device by using the liquid crystal display panel manufactured by the above-mentioned method for manufacturing a liquid crystal display panel.

The first aspect of the technique disclosed in the present specification is a lower electrode, an interlayer insulating film provided on the upper surface of the lower electrode, an upper surface of the interlayer insulating film, and the lower electrode in a plan view. A plurality of pixel portions each including upper electrodes provided at overlapping positions are formed, and a short-circuit region which is a region for short-circuiting the adjacent upper electrodes of the upper electrodes in each of the plurality of pixel portions is formed. In this case, the removal region is partially formed at a position overlapping the short-circuit region in the plan view, and the removal region is irradiated with light in the wavelength band absorbed by the removal region to form the removal region in the plan view. The removal region is removed together with the overlapping short-circuit region, and the wavelength band of light absorbed by the removal region includes the lower electrode, the interlayer insulating film, the upper electrode, and the wavelength band of light absorbed by the short-circuit region. Is different. According to such a configuration, the wavelength band of light well absorbed by the removal region is the wavelength band of light well absorbed by the short-circuit region, the wavelength band of light well absorbed by the upper electrode, and further absorbed well by the lower electrode. The wavelength band is different from the wavelength band of the light. Therefore, when the removed region is irradiated with light to remove the short-circuit region, damage to the structure around the short-circuit region can be suppressed.

The second aspect of the technique disclosed in the present specification is to manufacture a liquid crystal display device by using the liquid crystal display panel manufactured by the above-mentioned method for manufacturing a liquid crystal display panel. According to such a configuration, when the removal region is irradiated with light to remove the short-circuit region, damage to the structure around the short-circuit region can be suppressed.

The objectives, features, aspects and advantages of the technology disclosed herein will be further clarified by the detailed description and accompanying drawings set forth below.

It is a top view which schematically exemplifies the plan structure of the liquid crystal display panel which concerns on embodiment. FIG. 5 is a plan view schematically illustrating the configuration of a pixel portion formed in a display area according to an embodiment. It is sectional drawing which illustrates the cross section AA'in FIG. It is sectional drawing which illustrates the BB'cross section in FIG. FIG. 5 is a plan view schematically illustrating the configuration of a pixel portion formed in a display region when a short circuit occurs between adjacent pixels due to the influence of a foreign substance or the like when the upper electrode is patterned into a predetermined shape. It is sectional drawing which illustrates the BB'cross section in FIG. It is sectional drawing which illustrates the cross section of BB'in FIG. 5 in the state where the short-circuit region is removed. FIG. 5 is a plan view schematically illustrating the configuration of a pixel portion formed in a display region when a short circuit occurs between adjacent pixels due to the influence of a foreign substance or the like when the upper electrode is patterned into a predetermined shape. It is sectional drawing which illustrates the BB'cross section in FIG. It is a top view which schematically illustrates the structure of the pixel part formed in the display area when the metal film is formed on the upper surface of the short circuit area. It is sectional drawing which illustrates the BB'cross section in FIG. It is a top view which schematically illustrates the structure of the pixel part formed in the display area which illustrates the laser irradiation area. It is sectional drawing which illustrates the BB'cross section in FIG. It is a top view which schematically illustrates the structure of the pixel part formed in the display area in a state where a part of a short-circuit area is removed. It is sectional drawing which illustrates the BB'cross section in FIG. FIG. 5 is a plan view schematically illustrating the configuration of a pixel portion formed in a display region when a short circuit occurs between adjacent pixels due to the influence of a foreign substance or the like when the upper electrode is patterned into a predetermined shape. It is sectional drawing which illustrates the BB'cross section in FIG. FIG. 5 is a plan view schematically illustrating the configuration of a pixel portion formed in a display region when a part of the short-circuit region is colored. It is sectional drawing which illustrates the BB'cross section in FIG. It is a top view which schematically illustrates the structure of the pixel part formed in the display area which illustrates the laser irradiation area. It is sectional drawing which illustrates the BB'cross section in FIG. It is a top view which schematically illustrates the structure of the pixel part formed in the display area in the state where the colored area is removed. It is sectional drawing which illustrates the BB'cross section in FIG.

Hereinafter, embodiments will be described with reference to the attached drawings.

It should be noted that the drawings are shown schematically, and for convenience of explanation, the configuration is omitted or the configuration is simplified as appropriate. Further, the interrelationship between the sizes and positions of the configurations and the like shown in the different drawings is not always accurately described and can be changed as appropriate.

Further, in the description shown below, similar components are illustrated with the same reference numerals, and their names and functions are also the same. Therefore, detailed description of them may be omitted to avoid duplication.

Also, in the description described below, a specific position and direction such as "top", "bottom", "left", "right", "side", "bottom", "front" or "back". Even if terms that mean are used, these terms are used for convenience to facilitate understanding of the content of the embodiments and have nothing to do with the direction in which they are actually implemented. It doesn't.

<First Embodiment>
Hereinafter, a method for manufacturing a liquid crystal display panel according to the present embodiment will be described. The case where the FFS type liquid crystal display panel is used will be described below.

<About the configuration of the liquid crystal panel>
FIG. 1 is a plan view schematically illustrating a plan configuration of a liquid crystal display panel according to the present embodiment. It should be noted that FIG. 1 is a schematic one and does not reflect the exact size of the indicated components. In addition, in order to avoid complication, parts other than those related to the present embodiment may be omitted or partially simplified.

As illustrated in FIG. 1, the liquid crystal display panel 100 is provided with a display area 101 for displaying an image and a frame area 102 provided so as to surround the display area 101 in a plan view.

Although not shown, the TFT array substrate and the opposing substrate such as the color filter substrate are superimposed in the display area 101. On the other hand, the frame region 102 includes only the TFT array substrate. In other words, the TFT array substrate is larger than the facing substrate, and the region protruding from the facing substrate is the frame region 102. Further, although not shown, a liquid crystal is enclosed between the TFT array substrate and the facing substrate, which contributes to the display of an image in the display area 101.

In the display area 101, the plurality of signal lines 103 and the plurality of scanning lines 104 are arranged so as to be orthogonal to each other in a plan view. Further, a plurality of common wirings 105 are arranged in parallel with the scanning line 104.

A region surrounded by adjacent signal lines 103 and adjacent scanning lines 104 constitutes one pixel unit. In the display area 101, a plurality of pixel portions are arranged in a matrix.

Further, a thin film transistor 106 is arranged at each intersection of the signal line 103 and the scanning line 104. One thin film transistor 106 is provided for each pixel.

The frame area 102 is provided with a plurality of mounting terminals 107 and a plurality of external connection terminals 1071 connected to each of the plurality of mounting terminals 107.

The lead-out wiring extending from the signal line 103 in the display area 101 or the lead-out wiring extending from the scanning line 104 in the display area 101 is connected to each mounting terminal 107.

Further, the plurality of common wirings 105 are bound in the frame region 102, and a common potential is given. Further, the common wiring 105 is connected to the common wiring pad.

An integrated circuit (IC) chip 109 for signal control is connected to the mounting terminal 107. Further, a wiring board 108 such as a flexible printed circuit board (flexible printed circuit board, that is, FPC) is connected to the external connection terminal 1071.

FIG. 2 is a plan view schematically illustrating the configuration of the pixel portion formed in the display area according to the present embodiment. In this embodiment, the configuration of the so-called TFT substrate will be mainly described, and the description and illustration of the color filter substrate arranged to face the TFT substrate may be omitted.

As illustrated in FIG. 2, the upper electrode 91 and the lower electrode 71 are arranged in the pixel portion so as to form a vertical relationship. A voltage is applied between the upper electrode 91 and the lower electrode 71, and a substantially horizontal electric field is generated in the liquid crystal display panel 100. The electric field drives the liquid crystal molecules in the horizontal direction to display the liquid crystal.

The thin film transistor 106 is arranged on the upper surface of a transparent insulating substrate (not shown here) corresponding to the lower part of the upper electrode 91 and the lower part of the lower electrode 71. The thin film transistor 106 controls the supply of the display voltage in order to apply the display voltage based on the control signal input from the outside to the upper electrode 91.

The gate electrode of the thin film transistor 106 is connected to the scanning line 104, and the source electrode of the thin film transistor 106 is connected to the signal line 103. Further, a protective insulating film (not shown here) is provided on the upper surface of the transparent insulating substrate. Then, the upper electrode 91 is electrically connected to the drain electrode (not shown here) of the thin film transistor 106 via the contact hole 51 provided in the protective insulating film and the gate insulating film. Further, the lower electrode 71 is electrically connected to the common wiring 105 via the contact hole 52 provided in the protective insulating film.

In such a configuration, when a control signal is supplied from the scanning line 104, a current flows from the source electrode side of the thin film transistor 106 toward the drain electrode side of the thin film transistor 106. That is, the display voltage based on the control signal supplied from the signal line 103 is applied to the upper electrode 91. A plurality of slits 500 are formed in the upper electrode 91 so that the electric field generated by the display voltage based on the control signal is directed upward.

The control signal supplied from the signal line 103 is the IC chip 109 connected to the mounting terminal 107 in the frame area 102 or the wiring board 108 connected to the external connection terminal 1071 in the frame area 102, which is exemplified in FIG. Given by. Then, the display voltage corresponding to the display data is applied to each upper electrode 91 by the control signal.

Next, the cross-sectional configuration of the pixel portion will be described. FIG. 3 is a cross-sectional view illustrating the AA'cross section in FIG.

As illustrated in FIG. 3, the gate electrode 11 is partially formed on the upper surface of the transparent insulating substrate 10 in the display region. The region where the gate electrode 11 is formed is a region where the thin film transistor 106 is formed in a plan view.

Further, the gate electrode 11 is connected to the scanning line 104. Then, the gate insulating film 2 is formed so as to cover the gate electrode 11. Further, the gate insulating film 2 is formed so as to cover the scanning line 104, the common wiring 105 wired in parallel with the scanning line 104, and the common wiring pad. As the gate insulating film 2, for example, a SiN film can be used.

A semiconductor film 31 is partially formed on the upper surface of the gate insulating film 2 in a region overlapping the gate electrode 11 in a plan view.

The semiconductor film 31 is composed of any one of amorphous silicon, microcrystalline silicon, and polycrystalline silicon, a silicon semiconductor film in which a plurality of these are combined and laminated, an oxide semiconductor film, and the like.

In a plan view, the semiconductor film 31 is divided into a source region and a drain region with a channel region in between. A source electrode 41 is formed on the upper surface of the semiconductor film 31 which is a source region. Further, a drain electrode 42 is formed on the upper surface of the semiconductor film 31 which is a drain region.

The thin film transistor 106 in FIG. 2 includes a gate electrode 11, a semiconductor film 31, a source electrode 41, and a drain electrode 42.

Further, as illustrated in FIGS. 2 and 3, the gate electrode 11 and the gate insulating film 2 are formed on the surface of the insulating substrate 1. A signal line 103 made of a metal film made of the same material as the source electrode 41 and the drain electrode 42 is formed on the upper surface of the gate insulating film 2. The signal line 103 is connected to the source electrode 41.

Then, the protective insulating film 5 is formed so as to cover the entire upper surface of the thin film transistor 106 and the entire upper surface of the signal line 103.

The protective insulating film 5 is an inorganic insulating film. The protective insulating film 5 may be, for example, a single-layer film of a SiN film or a multilayer film including a SiO film and a SiN film.

Then, the flattening film 6 is formed on the protective insulating film 5. The protective insulating film 5 which is a SiN film prevents the characteristics of the thin film transistor 106 from being deteriorated by moisture or the like from the flattening film 6 or the like. The flattening film 6 may not be provided, and only the protective insulating film 5 which is a SiN film may be provided.

Further, the flattening film 6 is an organic resin film mainly composed of acrylic or a spin on glass (SOG) film. The reason why the material of the flattening film 6 is the above is that noise from the signal line 103 may affect the upper electrode 91, and the influence may deteriorate the display quality. The dielectric constant ε of the acrylic resin and the dielectric constant ε of the SOG film are both 3 or more and 4 or less. On the other hand, the dielectric constant ε of the SiN film is 6 or more and 7 or less. That is, the dielectric constant ε of the acrylic resin and the dielectric constant ε of the SOG film are lower than the dielectric constant ε of the SiN film. Therefore, according to the acrylic resin or the SOG film, it is possible to suppress the influence of noise by reducing the parasitic capacitance.

In addition, acrylic resin has high transparency and is inexpensive. In addition, the acrylic resin can be used as a coating film by dissolving it in an organic solvent. Therefore, the acrylic resin has the characteristics that it is easy to handle and can be fired at a relatively low temperature.

The SiO ₂ film formed by the chemical vapor deposition (CVD) method, the sputtering method, or the like also has the same dielectric constant ε as the SOG film. However, like the SiN film, the SiO ₂ film has a characteristic that it is difficult to flatten.

A lower electrode 71 made of a transparent conductive film such as ITO or IZO is partially formed on the upper surface of the flattening film 6 which is a flat surface. Further, an interlayer insulating film 8 such as SiN or SiO ₂ is formed on the upper surface of the flattening film 6 so as to cover the lower electrode 71.

An upper electrode 91 made of a transparent conductive film such as ITO or IZO is formed on the upper surface of the interlayer insulating film 8.

Then, the contact hole 51 is formed so as to penetrate the protective insulating film 5 on the upper surface of the drain electrode 42 and reach the drain electrode 42.

A lower electrode 71 is formed on the inner wall of the contact hole 51. The lower electrode 71 comes into contact with the drain electrode 42 on the bottom surface of the contact hole 51. Further, the upper electrode 91 covers the lower electrode 71 formed on the inner wall of the contact hole 51.

FIG. 4 is a cross-sectional view illustrating the BB'cross section in FIG. In the cross section illustrated in FIG. 4, the gate insulating film 2 is formed on the upper surface of the transparent insulating substrate 10, and the signal line 103 is partially formed on the upper surface of the gate insulating film 2.

Further, the protective insulating film 5 is formed so as to cover the signal line 103 and the gate insulating film 2, and the flattening film 6 is formed so as to cover the protective insulating film 5.

Further, the lower electrode 71 is formed on the upper surface of the flattening film 6, and the interlayer insulating film 8 is formed on the upper surface of the lower electrode 71. Then, the upper electrode 91 is partially formed on the upper surface of the interlayer insulating film 8.

FIG. 5 is a plane that schematically illustrates the configuration of the pixel portion formed in the display area when a short circuit occurs between adjacent pixels due to the influence of foreign matter or the like when the upper electrode is patterned into a predetermined shape. It is a figure.

As illustrated in FIG. 5, the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001, which are originally located apart from each other, are connected via the short-circuit region 201.

In order to display an image, an electric potential is applied to the upper electrode 91A of the pixel 1000 via the thin film transistor 106A. Further, in order to display an image, a potential is applied to the upper electrode 91B of the pixel 1001 via the thin film transistor 106B.

However, since the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001 are short-circuited via the short-circuit region 201, an appropriate voltage is not applied to the upper electrode 91A and the upper electrode 91B. Therefore, display defects occur.

FIG. 6 is a cross-sectional view illustrating the BB'cross section in FIG. As illustrated in FIG. 6, the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001 are short-circuited via the short-circuit region 201.

The short-circuit region 201 is made of the same material as the upper electrode 91A or the upper electrode 91B. The short-circuit region 201 is a transparent conductive film made of, for example, ITO or IZO.

Generally, in order to remove a short circuit caused by such a transparent conductive film, a method of irradiating the transparent conductive film with a laser beam having a wavelength of around 350 nm, which is well absorbed by the transparent conductive film, is used.

However, the interlayer insulating film 8 made of SiN, SiO ₂ , or the like transmits ultraviolet rays having a wavelength of around 350 nm better than the transparent conductive film. Therefore, the laser beam irradiated to remove the short-circuit region 201 reaches the transparent conductive film forming the lower electrode 71. Then, the lower electrode 71 of the portion irradiated with the laser beam is removed together with the interlayer insulating film 8.

FIG. 7 is a cross-sectional view illustrating the BB'cross section in FIG. 5 in a state where the short-circuit region is removed. By irradiating the laser beam, the short-circuit region 201 is removed, as illustrated in FIG.

On the other hand, the irradiated laser light removes the interlayer insulating film 8 and the lower electrode 71, so that between the upper electrode 91A and the lower electrode 71 and the upper electrode 71 as illustrated in FIG. A short-circuit region 202 may be formed between the 91B and the lower electrode 71, respectively. In this case, since appropriate voltages are not applied to the upper electrode 91A and the upper electrode 91B, display defects occur.

Hereinafter, an embodiment in which the short circuit generated between the upper electrodes is removed without causing a short circuit between the upper electrode and the lower electrode will be described.

FIG. 8 is a plane that schematically illustrates the configuration of the pixel portion formed in the display area when a short circuit occurs between adjacent pixels due to the influence of foreign matter or the like when the upper electrode is patterned into a predetermined shape. It is a figure. Further, FIG. 9 is a cross-sectional view illustrating the BB'cross section in FIG.

Further, FIG. 10 is a plan view schematically illustrating the configuration of the pixel portion formed in the display region when the metal film is formed on the upper surface of the short-circuit region. Further, FIG. 11 is a cross-sectional view illustrating the BB'cross section in FIG.

As illustrated in FIGS. 10 and 11, in the adjacent pixel 1000 and pixel 1001, a short-circuit region 201 is formed between the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001. Further, on the upper surface of the short-circuit region 201, a metal film 301 extending in a direction intersecting the direction connecting the pixel 1000 and the pixel 1001, for example, a direction orthogonal to the direction connecting the pixel 1000 and the pixel 1001 is formed. ..

The length of the metal film 301 in the longitudinal direction in a plan view is longer than the width of the short-circuit region 201. Here, the width of the short-circuit region 201 is the length of the short-circuit region 201 in a plan view in a direction orthogonal to the direction connecting the pixels.

By making the length of the metal film 301 in the longitudinal direction longer than the width of the short-circuit region 201, the metal film 301 is formed so as to cover the short-circuit region 201 in the longitudinal direction of the metal film 301.

Further, the length of the metal film 301 in the lateral direction is shorter than the distance between the pixels 1000 and the pixels 1001. Therefore, the metal film 301 does not directly short-circuit the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001.

The method for forming the metal film 301 is not particularly limited, but is a method capable of forming a finely patterned metal film at an arbitrary location in view of the fact that the location where the short-circuit region 201 is formed is arbitrary. Certain laser CVD methods can be used.

As a procedure, the laser CVD apparatus accommodates a liquid crystal panel in which a short circuit occurs between the upper electrode 91A and the upper electrode 91B. Then, in a carbonyl metal-based material gas such as hexacarbonyl tungsten (W (CO) ₆ ), hexacarbonyl chromium (Cr (CO) ₆ ), or hexacarbonyl molybdenum (Mo (CO) ₆ ), the wavelength is around 350 nm. Irradiate the area where you want to form a metal film with the laser beam. By doing so, a metal film made of W, Cr, Mo, or the like can be formed only in the region irradiated with the laser beam.

<Removal of short-circuit area>
FIG. 12 is a plan view schematically illustrating the configuration of the pixel portion formed in the display region, exemplifying the laser irradiation region. Further, FIG. 13 is a cross-sectional view illustrating the BB'cross section in FIG.

By setting the laser irradiation region 302 to a region as illustrated in FIGS. 12 and 13, a part of the short-circuit region 201 is removed. By removing a part of the short-circuit region 201, it is possible to prevent a short-circuit from occurring between the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001.

Specifically, as illustrated in FIGS. 12 and 13, a region including the metal film 301 is designated as a laser irradiation region 302, and by irradiating the region with a laser beam, W, Cr, can be generated by the heat generated by the laser beam. Alternatively, the metal film 301 made of Mo or the like is sublimated. By doing so, the metal film 301 made of W, Cr, Mo, or the like is removed.

When the metal film 301 sublimates, the metal becomes a gas together with the film of the underlying portion. Therefore, a part of the short-circuit region 201 in contact with the metal film 301 is also removed at the same time when the metal film 301 is sublimated.

FIG. 14 is a plan view schematically illustrating the configuration of the pixel portion formed in the display region in a state where a part of the short-circuit region is removed. Further, FIG. 15 is a cross-sectional view illustrating the BB'cross section in FIG.

As illustrated in FIGS. 14 and 15, by removing a part of the short-circuit region 201, the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001 are electrically separated. Therefore, an appropriate voltage is applied to each of the upper electrode 91A and the upper electrode 91B of the pixel 1000. Therefore, a normal liquid crystal display can be performed.

Generally, for removing a metal film, laser light having a wide wavelength range from ultraviolet rays to infrared rays is used depending on the application. This is because the metal film can absorb light in the wavelength band from ultraviolet rays to infrared rays as compared with the transparent conductive film described later, and the absorbed light raises the temperature and sublimates. Also in this embodiment, laser light having a wide wavelength range from ultraviolet rays to infrared rays can be used for removing the metal film 301.

The transparent conductive film such as ITO or IZO forming the upper electrode 91A and the upper electrode 91B transmits about 80% of light in the wavelength band from visible light having a wavelength of 400 nm to infrared light having a wavelength of 1100 nm.

However, the transmittance of the transparent conductive film decreases as the wavelength becomes shorter for light having a wavelength of 400 nm or less, and the transmittance decreases to about 10% for light having a wavelength of 300 nm. Further, the transparent conductive film has a reduced transmittance even for light having a wavelength of 1100 nm or more.

Therefore, when a laser beam having a wavelength of 400 nm or more and a wavelength of 1100 nm or less is used to remove the metal film 301, only the metal film 301 is mainly heated by the laser beam. Then, the metal film 301 involves a part of the short-circuit region 201 in contact with the metal film 301 and sublimates. That is, the wavelength band of light absorbed by the removal region and the wavelength band of light absorbed by the short-circuit region may partially overlap, but it is sufficient if only the removal region absorbs light. , It suffices to irradiate the light of the different wavelength band. Specifically, when the short-circuit region is a transparent conductive film, the wavelength band of light absorbed by the removal region may include a part of the wavelength band of at least 400 nm or more and 1100 nm or less.

On the other hand, within the range of the laser irradiation region 302, there is also a short-circuit region 201, an upper electrode 91A, or an upper electrode 91B at a position that does not overlap with the metal film 301 in a plan view. However, even when the laser beam is irradiated to the short-circuit region 201, the upper electrode 91A, or the upper electrode 91B at a position that does not overlap with the metal film 301 in the plan view, most of the irradiated laser light is short-circuited. It passes through the region 201, the upper electrode 91A, or the upper electrode 91B.

Therefore, the temperature of the short-circuit region 201, the upper electrode 91A, or the upper electrode 91B at a position that does not overlap with the metal film 301 in the plan view within the range of the laser irradiation region 302 is high even when the laser beam is irradiated. Does not rise significantly and is hardly damaged.

Further, in general, the longer the wavelength of the irradiated laser beam, the more easily the temperature of the metal film rises even when the energy of the irradiated laser beam is low. Therefore, for example, when a laser beam having a wavelength of 800 nm or more and 1100 nm or less is used, the short-circuit region 201, the upper electrode 91A, or the upper electrode 91B at a position that does not overlap with the metal film 301 in a plan view is almost damaged. The metal film 301 can be removed without giving.

On the other hand, when a laser beam having a wavelength of 400 nm or less is used, the energy required to remove the metal film 301 increases. When laser light having a wavelength of 400 nm or less is used, the laser light is well absorbed even in the short-circuit region 201, the upper electrode 91A, or the upper electrode 91B at a position that does not overlap with the metal film 301 in a plan view.

Therefore, when a laser beam having a wavelength of 400 nm or less is used, the short-circuit region 201, the upper electrode 91A, or the upper electrode 91B at a position that does not overlap with the metal film 301 in a plan view may be damaged. Further, the short-circuit region 201, the upper electrode 91A, or the upper electrode 91B at a position not overlapping with the metal film 301 in the plan view is sublimated by involving the interlayer insulating film 8 located directly below, so that the exposed lower electrode 71 is exposed. And the remaining upper electrode 91A or upper electrode 91B may be short-circuited via a transparent conductive film formed by reattaching the sublimated material of the upper electrode.

<Second Embodiment>
A method of manufacturing a liquid crystal display panel according to the present embodiment will be described. In the following description, the same configurations as those described in the above-described embodiments will be illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate.

Hereinafter, an embodiment in which the short circuit generated between the upper electrodes is removed without causing a short circuit between the upper electrode and the lower electrode will be described.

<About the configuration of the liquid crystal panel>
FIG. 16 is a plane that schematically illustrates the configuration of the pixel portion formed in the display area when a short circuit occurs between adjacent pixels due to the influence of foreign matter or the like when the upper electrode is patterned into a predetermined shape. It is a figure. Further, FIG. 17 is a cross-sectional view illustrating the BB'cross section in FIG.

Further, FIG. 18 is a plan view schematically illustrating the configuration of the pixel portion formed in the display region when a part of the short-circuit region is colored. Further, FIG. 19 is a cross-sectional view illustrating the BB'cross section in FIG.

As illustrated in FIGS. 18 and 19, the short-circuit region 201A between the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001 extends in a direction intersecting the direction connecting the pixel 1000 and the pixel 1001. The colored region 401 is formed. The length of the colored region 401 in the lateral direction is shorter than the distance between the pixels 1000 and the pixels 1001. That is, the length of the colored region 401 in the lateral direction is shorter than the length of the short-circuit region 201A in the direction connecting the pixels 1000 and the pixels 1001.

The colored region 401 formed in the short-circuit region 201A between the upper electrode 91A and the upper electrode 91B is formed by partially reducing the transparent conductive film forming the short-circuit region 201A.

The method for reducing the transparent conductive film is not particularly limited, and for example, a method in which a liquid crystal panel is arranged in a vacuum and a focused hydrogen ion beam is irradiated to a region to be colored can be used.

<Removal of colored areas>
FIG. 20 is a plan view schematically illustrating the configuration of the pixel portion formed in the display region, which illustrates the laser irradiation region. 21 is a cross-sectional view illustrating the BB'cross section in FIG. 20.

By setting the laser irradiation region 302A to a region as exemplified in FIGS. 20 and 21, a part of the short-circuit region 201A is removed. By removing a part of the short-circuit region 201A, it is possible to prevent a short-circuit from occurring between the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001.

Specifically, as illustrated in FIGS. 20 and 21, the region including the colored region 401 is designated as the laser irradiation region 302A, and by irradiating the region with laser light, the colored region 401 is heated by the heat of the laser beam. Sublimate. By doing so, the colored region 401 is removed.

When the colored region 401 sublimates, the colored region 401 becomes a gas with a film of the underlying portion. Therefore, a part of the short-circuit region 201A that contacts the colored region 401 is also removed at the same time when the colored region 401 sublimates.

FIG. 22 is a plan view schematically illustrating the configuration of the pixel portion formed in the display region in the state where the colored region is removed. Further, FIG. 23 is a cross-sectional view illustrating the cross section of BB'in FIG. 22.

As illustrated in FIGS. 22 and 23, the colored region 401 is sublimated by laser light to electrically separate the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001. Therefore, an appropriate voltage is applied to each of the upper electrode 91A and the upper electrode 91B of the pixel 1000. Therefore, a normal liquid crystal display can be performed.

Generally, a laser beam having a wavelength of 400 nm or less is used to remove a transparent conductive film such as ITO and IZO. The transparent conductive film transmits about 80% of light in the wavelength band from visible light having a wavelength of 400 nm to infrared light having a wavelength of 1100 nm. Therefore, when a laser beam having a wavelength of 400 nm or more is used for removing the transparent conductive film, most of the irradiated laser beam is transmitted, resulting in poor efficiency.

On the other hand, when a transparent conductive film such as ITO or IZO is reduced, the color of the transparent conductive film changes from transparent to yellow and further from yellow to brown as the reduction progresses. The reason why the color of the transparent conductive film changes in this way is that the transparent conductive film absorbs light having a wavelength of 400 nm or more well as the reduction progresses, that is, the transparent conductive film becomes more and more as the reduction progresses. This is because it absorbs long-wavelength light well.

For this reason, in order to remove the colored region 401, it is desirable to use laser light having a wavelength that is absorbed in the colored region 401 but is transmitted through the interlayer insulating film 8 and the lower electrode 71. Specifically, it is desirable to use laser light having a wavelength of 400 nm or more and a wavelength of 1100 nm or less.

Furthermore, since the colored region 401 formed by reducing the transparent conductive film is yellow to brown, it is clear that light from blue to green is particularly well absorbed. Therefore, it is desirable to use laser light having a wavelength in the range of 430 nm or more and 560 nm or less.

<About the effect caused by the above-described embodiment>
Next, the effects produced by the above-described embodiments will be illustrated. In the following description, the effect is described based on the specific configuration exemplified in the above-described embodiment, but is exemplified in the present specification to the extent that the same effect occurs. It may be replaced with other specific configurations.

Further, the replacement may be made across a plurality of embodiments. That is, it may be the case that the respective configurations exemplified in the different embodiments are combined to produce the same effect.

According to the embodiment described above, in the method for manufacturing a liquid crystal display panel, a plurality of pixel portions each including a lower electrode 71, an interlayer insulating film 8, and an upper electrode are formed. Then, when the short-circuit region 201, which is a region for short-circuiting the adjacent upper electrodes of the upper electrodes in each of the plurality of pixel portions, is formed, the removal region is partially set at a position overlapping the short-circuit region 201 in the plan view. Form. Then, by irradiating the removal region with light in the wavelength band absorbed by the removal region, the removal region is removed together with the short-circuit region 201 that overlaps the removal region in a plan view. Here, the interlayer insulating film 8 is provided on the upper surface of the lower electrode 71. Further, the upper electrode is provided on the upper surface of the interlayer insulating film 8 and at a position overlapping with the lower electrode 71 in a plan view. Further, the wavelength band of light absorbed by the removal region is different from the wavelength band of light absorbed by the lower electrode 71, the interlayer insulating film 8, the upper electrode, and the short-circuit region 201. Here, the removal region corresponds to, for example, the metal film 301.

According to such a configuration, the wavelength band of light well absorbed by the removal region is the wavelength band of light well absorbed by the short-circuit region 201, the wavelength band of light well absorbed by the upper electrode 91A or the upper electrode 91B, and further. , The wavelength band is different from the wavelength band of light well absorbed by the lower electrode 71. Therefore, when the removal region is irradiated with light to remove the short-circuit region 201, damage to the structure around the short-circuit region 201 can be suppressed.

In addition to these configurations, other configurations exemplified in the present specification may be omitted as appropriate. That is, if at least these configurations are provided, the effects described above can be produced.

However, when at least one of the other configurations exemplified in the present specification is appropriately added to the above-described configuration, that is, in the present specification not described as the above-described configuration. Even when the other configurations described above are added to the configurations described above, the effects described above can be similarly produced.

Further, unless otherwise specified, the order in which each process is performed can be changed.

Further, according to the above-described embodiment, in a plan view, a removal region extending in a direction intersecting the direction connecting the plurality of pixel portions is formed. Then, in the direction in which the removal region extends, the formation width of the removal region is equal to or larger than the formation width of the short-circuit region 201. Here, the removal region corresponds to, for example, the metal film 301. According to such a configuration, by setting the length of the metal film 301 in the longitudinal direction to be equal to or greater than the width of the short-circuit region 201, the metal film 301 is formed so as to cover the short-circuit region 201 in the longitudinal direction of the metal film 301. It becomes. Therefore, when the removal region is removed, the short-circuit region 201 is surely divided accordingly, so that the short-circuit between the upper electrode 91A of the pixel 1000 and the upper electrode 91B of the pixel 1001 can be eliminated. Can be done.

Further, according to the embodiment described above, the metal film 301 which is the removal region is formed on the upper surface of the short-circuit region 201. According to such a configuration, the wavelength band of light well absorbed by the metal film 301 is the wavelength band of light well absorbed by the short-circuit region 201, the wavelength band of light well absorbed by the upper electrode 91A or the upper electrode 91B, and further. Is a wavelength band different from the wavelength band of light well absorbed by the lower electrode 71. By irradiating light in a wavelength band of light that is well absorbed by the metal film 301, for example, a wavelength band of 400 nm or more and a wavelength of 1100 nm or less, only the metal film 301 can be mainly heated. Therefore, when the removal region is irradiated with light to remove the short-circuit region 201, damage to the structure around the short-circuit region 201 can be suppressed.

Further, according to the embodiment described above, the short-circuit region 201 is a transparent conductive film, and the wavelength band of light absorbed by the removal region is at least a part of the wavelength band of 400 nm or more and 1100 nm or less. including. Here, the removal region corresponds to, for example, the metal film 301. According to such a configuration, the wavelength band of light well absorbed by the removal region is the wavelength band of light well absorbed by the short-circuit region 201, the wavelength band of light well absorbed by the upper electrode 91A or the upper electrode 91B, and further. , The wavelength band is different from the wavelength band of light well absorbed by the lower electrode 71. Therefore, when the removed region is irradiated with light having a wavelength band of 400 nm or more and 1100 nm or less in order to remove the short-circuit region 201, damage to the structure around the short-circuit region 201 can be suppressed.

Further, according to the above-described embodiment, the wavelength band of light absorbed by the removal region includes a part of the wavelength band of at least 800 nm or more and 1100 nm or less. Here, the removal region corresponds to, for example, the metal film 301. According to such a configuration, the wavelength band of light well absorbed by the removal region is the wavelength band of light well absorbed by the short-circuit region 201, the wavelength band of light well absorbed by the upper electrode 91A or the upper electrode 91B, and further. , The wavelength band is different from the wavelength band of light well absorbed by the lower electrode 71. Further, since the irradiated light has a long wavelength, the temperature of the metal film 301 tends to rise. Therefore, since the energy of the emitted light can be suppressed to a low level, damage to the structure around the short-circuit region 201 can be effectively suppressed.

Further, according to the embodiment described above, the removal region is formed by reducing the short-circuit region 201A. Here, the removal region corresponds to, for example, the colored region 401. According to such a configuration, the removal region formed by reducing the short-circuit region 201A absorbs light having a longer wavelength than the short-circuit region 201A. Therefore, the wavelength band of light that is well absorbed by the removal region is often the wavelength band of light that is well absorbed by the short-circuit region 201A, the wavelength band of light that is well absorbed by the upper electrode 91A or the upper electrode 91B, and further the lower electrode 71. The wavelength band is different from the wavelength band of the absorbed light. Therefore, when the removal region is irradiated with light to remove the short-circuit region 201A, damage to the structure around the short-circuit region 201A can be suppressed.

Further, according to the above-described embodiment, the wavelength band of light absorbed by the removal region includes a part of the wavelength band of at least 400 nm or more and 1100 nm or less. Here, the removal region corresponds to, for example, the colored region 401. According to such a configuration, the wavelength band of light well absorbed by the removal region is the wavelength band of light well absorbed by the short-circuit region 201A, the wavelength band of light well absorbed by the upper electrode 91A or the upper electrode 91B, and further. Since the wavelength band of the light absorbed by the lower electrode 71 is different from the wavelength band of the light well absorbed, when the removal region is irradiated with light having a wavelength band of 400 nm or more and 1100 nm or less in order to remove the short-circuit region 201A. , Damage to the structure around the short-circuit region 201A can be suppressed.

Further, according to the above-described embodiment, the wavelength band of light absorbed by the removal region includes a part of the wavelength band of at least 430 nm or more and 560 nm or less. Here, the removal region corresponds to, for example, the colored region 401. According to such a configuration, the wavelength band of light well absorbed by the removal region is the wavelength band of light well absorbed by the short-circuit region 201A, the wavelength band of light well absorbed by the upper electrode 91A or the upper electrode 91B, and further. Since the wavelength band of the light absorbed by the lower electrode 71 is significantly different from that of the light absorbed well, when the removal region is irradiated with light having a wavelength band of 430 nm or more and 560 nm or less in order to remove the short-circuit region 201A. In addition, damage to the structure around the short-circuit region 201A can be effectively suppressed.

Further, according to the above-described embodiment, the liquid crystal display device is manufactured by using the liquid crystal display panel manufactured by the above-mentioned manufacturing method of the liquid crystal display panel. According to such a configuration, when the removal region is irradiated with light to remove the short-circuit region 201, damage to the structure around the short-circuit region 201 can be suppressed.

Further, according to the embodiment described above, the liquid crystal display panel is manufactured by using the array substrate manufactured by the above-mentioned manufacturing method of the liquid crystal display panel, and further, the liquid crystal display device is manufactured by using the liquid crystal display panel. Can be manufactured. Specifically, a liquid crystal display panel is manufactured by bonding an array substrate manufactured by the above method for manufacturing a liquid crystal display panel and a facing substrate with a known sticker and enclosing a liquid crystal inside the array substrate. Further, after mounting the drive circuit on the liquid crystal display panel, the liquid crystal display device is formed by combining a planar light source including an LED and a light guide plate and a backlight including an optical sheet including a reflective sheet and a diffusion sheet. Can be manufactured.

<About the modified example in the above-described embodiment>
In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, conditions of implementation, etc. of the respective components may also be described, but these are examples in all aspects. Therefore, the present invention is not limited to those described in the present specification.

Therefore, innumerable variations and equivalents not exemplified are envisioned within the scope of the techniques disclosed herein. For example, when transforming, adding or omitting at least one component, or when extracting at least one component in at least one embodiment and combining it with the components of other embodiments. Shall be included.

In addition, as long as there is no contradiction, the components described as being provided with "one" in the above-described embodiment may be provided with "one or more".

Further, each component in the above-described embodiment is a conceptual unit, and within the scope of the technique disclosed in the present specification, one component is composed of a plurality of structures. And the case where one component corresponds to a part of a structure, and further, the case where a plurality of components are provided in one structure.

In addition, each component in the above-described embodiment shall include a structure having another structure or shape as long as it exhibits the same function.

In addition, the description in the present specification is referred to for all purposes relating to the present technology, and none of them is recognized as a prior art.

Further, in the above-described embodiment, when a material name or the like is described without being specified, the material contains other additives, for example, an alloy, etc., unless a contradiction occurs. It shall be included.

2 Gate insulating film, 5 Protective insulating film, 6 Flattening film, 8 Thin film transistor, 10 Transparent insulating substrate, 11 Gate electrode, 31 Semiconductor film, 41 Source electrode, 42 Drain electrode, 51, 52 Contact hole, 71 Lower part Electrodes, 91, 91A, 91B upper electrode, 100 liquid crystal display panel, 101 display area, 102 frame area, 103 signal line, 104 scanning line, 105 common wiring, 106, 106A, 106B thin film transistor, 107 mounting terminal, 108 wiring board, 109 IC chip, 201, 201A, 202 short-circuit region, 301 metal film, 302, 302A laser irradiation region, 401 colored region, 500 slits, 1000, 1001 pixels, 1071 external connection terminal.

Claims (11)

A plurality of pixels each including a lower electrode, an interlayer insulating film provided on the upper surface of the lower electrode, and an upper electrode provided on the upper surface of the interlayer insulating film and at a position overlapping the lower electrode in a plan view. Form a part,
When a short-circuit region is formed in each of the plurality of pixel portions, which is a region for short-circuiting the adjacent upper electrodes of the upper electrodes, the removal region is partially provided at a position overlapping the short-circuit region in a plan view. Form and
By irradiating the removal region with light in the wavelength band absorbed by the removal region, the removal region is removed together with the short-circuit region that overlaps the removal region in a plan view.
The wavelength band of light absorbed by the removal region is different from the wavelength band of light absorbed by the lower electrode, the interlayer insulating film, the upper electrode, and the short-circuit region.
Manufacturing method of liquid crystal display panel. In a plan view, the removal region extending in a direction intersecting the direction connecting the plurality of pixel portions is formed.
In the direction in which the removal region extends, the formation width of the removal region is equal to or larger than the formation width of the short-circuit region.
The method for manufacturing a liquid crystal display panel according to claim 1. A metal film, which is the removal region, is formed on the upper surface of the short-circuit region.
The method for manufacturing a liquid crystal display panel according to claim 1 or 2. The metal film is one of Cr, W, and Mo.
The method for manufacturing a liquid crystal display panel according to claim 3. The metal film is formed by a laser CVD method.
The method for manufacturing a liquid crystal display panel according to claim 4. The short-circuit region is a transparent conductive film, and the wavelength band of light absorbed by the removal region includes a part of a wavelength band of at least 400 nm or more and 1100 nm or less.
The method for manufacturing a liquid crystal display panel according to claim 3. The wavelength band of light absorbed by the removal region includes a part of the wavelength band of at least 800 nm or more and 1100 nm or less.
The method for manufacturing a liquid crystal display panel according to claim 6. The short-circuit region is a transparent conductive film, and the removal region is formed by reducing the short-circuit region.
The method for manufacturing a liquid crystal display panel according to claim 1 or 2. The wavelength band of light absorbed by the removal region includes a part of the wavelength band of at least 400 nm or more and 1100 nm or less.
The method for manufacturing a liquid crystal display panel according to claim 8. The wavelength band of light absorbed by the removal region includes a part of the wavelength band of at least 430 nm or more and 560 nm or less.
The method for manufacturing a liquid crystal display panel according to claim 9. A liquid crystal display device is manufactured by using the liquid crystal display panel manufactured by the method for manufacturing a liquid crystal display panel according to any one of claims 1 to 10.
A method for manufacturing a liquid crystal display device.

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