WO2012174952A1 - 一种高倍聚光多结太阳能电池及其制备方法 - Google Patents

一种高倍聚光多结太阳能电池及其制备方法 Download PDF

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WO2012174952A1
WO2012174952A1 PCT/CN2012/075134 CN2012075134W WO2012174952A1 WO 2012174952 A1 WO2012174952 A1 WO 2012174952A1 CN 2012075134 W CN2012075134 W CN 2012075134W WO 2012174952 A1 WO2012174952 A1 WO 2012174952A1
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cell
layer
concentration
emission layer
junction
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PCT/CN2012/075134
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French (fr)
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宋明辉
林桂江
吴志浩
王良均
刘建庆
毕京锋
熊伟平
林志东
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厦门市三安光电科技有限公司
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Priority to US14/124,579 priority Critical patent/US20140090700A1/en
Publication of WO2012174952A1 publication Critical patent/WO2012174952A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of compound semiconductor solar cells, and in particular relates to a high-concentration multi-junction solar cell structure and a preparation method thereof.
  • CP V concentrated photovoltaic
  • the multi-junction solar cell is formed by a plurality of semiconductor sub-cells having different band gaps connected by tunneling junctions, and different sub-cells absorb solar light of different wavelength bands, thereby converting as much solar energy as possible into electric energy.
  • multi-junction solar cells have become the basic battery structure for solar cell research in various research institutes and enterprises in the world.
  • Spire Corporation of the United States announced that it has developed a three-junction solar cell.
  • atmospheric optical quality AM1.5, 25 °C the efficiency of 0.97cm 2 battery reached 42.3. %.
  • Such batteries can concentrate hundreds of thousands of times of solar energy through a condenser lens onto a small battery chip to generate electricity, thereby saving solar cell wafers on a large scale, but a higher concentration ratio ( ⁇ 1000X) can make When the concentrating battery obtains a large open circuit voltage and short circuit current, it will also cause the battery to generate a larger series resistance, which seriously affects The filling factor of the battery causes a decrease in the conversion efficiency of the battery.
  • the object of the present invention is to provide a novel high-concentration multi-junction solar cell which has a high open circuit voltage and a short-circuit current, and can maintain a high fill factor under high-concentration conditions, that is, in a high-concentration condition. High photoelectric conversion efficiency can still be maintained.
  • a high power concentrating multi-junction solar cell is provided.
  • the high-concentration multi-junction solar cell includes: a top cell, a middle cell, a bottom cell, and two tunnel junctions.
  • the emission layers of the top cell and the middle cell are all graded doped, and the thickness of the top cell emission layer is more than one hundred nanometers larger than the thickness of the conventional multi-junction cell.
  • the top cell emitting layer has a thickness of 0.05 to 0.5 m.
  • the top cell emissive layer has a thickness of 0.3 microns.
  • the emissive layer near the base region is a low concentration doping region, and the doping concentration thereof is 1 x l0 17 /cm 3 ⁇ lx l0 18 /cm 3 , and the emission away from the base region
  • the layer is a high concentration doping region having a doping concentration of 1 x l0 18 /cm 3 to 1 x l0 19 /cm 3 .
  • the doping concentration of the top cell emissive layer is ramped from 5 x 10 17 /cm 3 to 5 x 10 18 /cm 3 .
  • the doping concentration of the middle cell emissive layer is changed from 5 x 10 17 /cm 3 to 5 x 10 18 /cm 3 .
  • a method for fabricating a high-concentration multi-junction solar cell comprising the steps of: epitaxially growing Ge on a selected Ge substrate by an epitaxial method such as an MOCVD method, a MBE method, or a UHCVD method; a bottom cell; a GaAs tunneling junction epitaxially grown on the Ge bottom cell; a base region of the cell in the epitaxially grown (In) GaAs on the GaAs tunneling junction; a graded doped epitaxial growth on the base of the cell in the (In) GaAs (In) a cell emission layer in GaAs, constituting a cell in (In) GaAs; epitaxially growing an AlGaAs tunneling junction on a cell in (In) GaAs; epitaxially growing an InGaP top cell base region on an AlGaAs tunneling junction; in InGaP top cell A thicker, graded-doped InGaP top cell emit
  • the doping concentration of the emission layer of the middle cell is gradual, including a step-type gradual change, a continuous gradation; the emission layer near the base region is a low-concentration doped region, and the doping concentration thereof is lx l0 17 /cm 3 ⁇ 1 x l0 18 /cm 3 , the emission layer away from the base region is a high concentration doping region, and its doping concentration is lx l0 18 /cm 3 ⁇ 1 x l0 19 /cm 3 .
  • the doping concentration of the emissive layer of the top cell is gradual, including a step-type gradual change, a continuous gradation; the emissive layer near the base region is a low-concentration doped region, and the doping concentration thereof is lx l0 17 /cm 3 ⁇ 1 x l0 18 /cm 3 , the emission layer away from the base region is a high concentration doping region, and its doping concentration is lx l0 18 /cm 3 ⁇ 1 x l0 19 /cm 3 .
  • the doping concentration of the top cell and the middle cell emissive layer is changed from 5 x 10 17 /cm 3 to 5 x 10 18 /cm 3 .
  • the entire top cell emitting layer has a thickness of 0.05 to 0.5 ⁇ m.
  • the emission layers of each sub-cell of a conventional multi-junction solar cell are uniformly doped, and the thinner the emission layer is, the higher the photoelectric conversion efficiency of the battery is.
  • the thinner top cell emitter layer will have a larger series resistance under high-concentration conditions, which will reduce the cell's fill factor and ultimately affect the cell's conversion efficiency under high-concentration conditions.
  • the invention relates to a high-concentration multi-junction solar cell, wherein the emitter layers of the top and middle cells are graded doped, have a high open circuit voltage and a short circuit current, and allow a top cell under high concentration conditions.
  • the emissive layer has a larger thickness than the conventional multi-junction cell to reduce the series resistance of the multi-junction cell as a whole, improve the fill factor of the cell, and finally obtain higher photoelectric conversion efficiency.
  • FIG. 1 is a side cross-sectional view of a high power concentrating multi-junction solar cell according to the present invention.
  • a high-concentration multi-junction solar cell includes a Ge bottom cell A, a middle cell B, a top cell C, and two tunnel junctions 200 and 400 therebetween.
  • the figure shows a P-type Ge substrate 100 on which an n-type Ga is deposited.
  • 5 In 0 . 5 P Window layer 101 constitutes Ge bottom battery A.
  • a series of heavily doped P-type and n-type layers are deposited on top of the Ge bottom cell A to form a GaAs tunnel junction 200 for connecting the Ge bottom cell A to the middle cell B.
  • a middle cell back field layer 300 for reducing the composite loss is deposited on top of the GaAs tunneling junction 200.
  • the layer is preferably composed of P-type AlGaAs.
  • a middle battery base region 301 and a middle battery emission layer 302 are deposited on the middle battery back field layer 300.
  • the battery base region 301 is made of P-type (In) GaAs and has a thickness of 3.5 ⁇ m;
  • the emissive layer 302 is composed of n-type (In) GaAs, and the n-type doping amount is gradually increased as the thickness is increased, and the doping concentration is continuously changed from 5x10 17 /cm 3 to 5 x 10 18 /cm 3 and the thickness is 0.1.
  • a middle cell window layer 303 composed of n-type AllnP is deposited on the middle cell emissive layer 302 to form a middle cell B.
  • a tunneling junction 400 preferably composed of AlGaAs, is deposited on top of the middle cell B for connecting the middle cell B to the top cell C.
  • a top cell backfield layer 500 preferably comprised of P-type AlInGaP, is deposited on top of the tunneling junction 400.
  • a top cell base region 501 and a top cell emitter layer 502 are deposited on top of the top cell backfield layer 500.
  • the top cell base region 501 is composed of P-type GalnP and has a thickness of 0.8 ⁇ m;
  • the top cell emissive layer 502 is composed of n-type GalnP, and the n-type doping amount is gradually increased as the thickness is increased.
  • the doping concentration was continuously changed from 5 x 10 17 /cm 3 to 5 x 10 18 /cm 3 and the thickness was 0.3 ⁇ m.
  • a top cell window layer 503 composed of n-type AllnP is deposited on the top cell emissive layer 502 to form a top cell C.
  • Embodiment 2 is a preparation process of a high-concentration multi-junction solar cell described in Example 1, which comprises a process of forming sub-cells A, B, C and respective layers between the sub-cells.
  • the gradation of the doping concentration of the emissive layer can be achieved by adjusting the flow ratio of the n-type doping source in the reaction source.
  • the specific preparation process includes the following steps: A p-type doped single crystal germanium substrate 100 having a thickness of 150 ⁇ m is used as a base of the Ge bottom cell.
  • the P-type Ge substrate 100 is cleaned and placed in an MOCVD reaction chamber, first baked at 750 ° C for 10 minutes, and then cooled to 600 ° C to epitaxially grow n-type Ga Q . 5 In Q . 5 P window layer 101, forming a Ge bottom battery A.
  • a GaAs tunneling junction 200 of the midsole cell is epitaxially grown on a Ge bottom cell.
  • the back field layer 300 of the battery B is grown to prevent the photogenerated electrons in the base region of the battery from diffusing into the bottom cell.
  • the specific method is: adjusting the temperature in the MOCVD reaction chamber to 620 ° C, the molar ratio of the five-three source source to 120, and epitaxially growing a layer of P-type Al on the GaAs tunneling junction 200. 2 Gao. 8 As as the back field layer of the battery B. A base region 301 and an emission layer 302 of the intermediate battery B are epitaxially grown on the back field layer of the battery B.
  • the molar ratio of the five or three sources in the MOCVD reaction chamber was changed to 40, and a layer of P-type epitaxially was grown on the back field layer 300 of the middle battery B. (nGa.. 99 As as the base region 301 of the middle battery B, having a thickness of 3.5 ⁇ m.
  • the emission layer 302 is epitaxially grown on the middle battery base region 301.
  • a smaller n-type is used at the initial stage of growth.
  • the doping source flow rate gradually increases the doping source flow rate as the thickness of the emissive layer increases, and finally obtains a medium emission layer n-type in which the doping concentration is continuously changed from 5 x 10 17 /cm 3 to 5 x 10 18 /cm 3 . .. m Ga .. 99 as 302, a thickness of 0.1 m. on the emission layer 302 in the cell B is epitaxially grown n-type layer of the battery B AllnP as a window layer 303 is formed in 0. 01 Ga 0. 99 Battery B in As.
  • the AlGaAs tunneling junction 400 is epitaxially grown on the battery B in In. 01 Ga.. 99 As.
  • the back field layer 500 of the top cell C is grown to prevent the photogenerated electrons in the base cell of the top cell from diffusing into the middle cell.
  • Specific method: The temperature in the MOCVD reaction chamber is adjusted to 650 ° C, the molar ratio of the five-three source source is 200, and a layer of p-type AlInGaP is epitaxially grown on the AlGaAs tunneling junction 400 as the back field layer 500 of the top cell C.
  • the base region 501 and the emissive layer of the top cell C are epitaxially grown on the back field layer 500 of the battery C.
  • a five-three source molar flow ratio of 180 was changed, and a P-type Gao. 5 In was epitaxially grown on the back field layer 500 of the battery C.
  • 5 P is the base region 501 of the top cell C and has a thickness of 0.8 ⁇ m.
  • a top cell emissive layer 502 is epitaxially grown on the base region 501 of the top cell C.
  • a small n-type dopant source flow rate is used at the initial stage of growth, and the doping source flow rate is gradually increased as the thickness of the emission layer increases, and finally the doping concentration is continuously changed from 5xl0 17 /cm 3 .
  • An n-type AllnP is epitaxially grown on the emissive layer 502 of the top cell C as a window layer 503 of the top cell C to form a top cell C of Gao.5Ino.5P.

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Abstract

一种高倍聚光多结太阳能电池及其制备方法。太阳能电池由顶电池（C）、中电池（B）、底电池（A）、顶电池与中电池之间的隧穿结（400）以及中电池与底电池之间的隧穿结（200）组成，其中，顶电池和中电池的发射层（302，502）为渐变掺杂层。顶电池发射层的厚度较传统多结电池的发射层厚数百纳米。由于顶部和中部子电池的发射层均使用渐变掺杂方式，使得这种高倍聚光多结太阳能电池具有较高的开路电压和短路电流，同时在高倍聚光条件下，顶电池发射层具有比传统多结电池更大的厚度以降低多结电池整体的串联电阻，提高电池的填充因子，最终获得高的光电转换效率。

Description

一种高倍聚光多结太阳能电池及其制备方法 本申请要求于 2011 年 06 月 22 日提交中国专利局、 申请号为 201110168522.9、 发明名称为"一种高倍聚光多结太阳能电池及其制备方法"的 中国专利申请的优先权， 其全部内容通过引用结合在本申请中。 技术领域
本发明属于化合物半导体太阳能电池领域，具体涉及一种高倍聚光多结太 阳能电池结构及其制备方法。
背景技术
光伏发电经历了第一代晶体硅电池和第二代薄膜电池发展之后， 目前正步 入第二代聚光光伏 (CP V)技术。 CPV技术的核心是 III-V族聚光多结太阳电池， 与其他种类的太阳电池相比， 聚光多结太阳能电池具有光电转换效率高、温度 特性好、 能耗回收周期短等优点， 可以最大限度的利用太阳能资源， 降低建设 电站对环境的破坏。
多结太阳能电池是由多个具有不同带隙的半导体子电池通过隧穿结连接 而成的， 不同子电池吸收不同波段的太阳光语，从而可以将尽可能多的太阳能 转换为电能。 以其独特的设计思想和较高的光电转换效率， 多结太阳能电池已 成为目前世界光伏领域各科研单位、 企业进行太阳能电池研究的基本电池结 构。 2010年 10月， 美国 Spire公司宣布其研制出的三结太阳能电池， 在 406 倍太阳辐射聚光、 大气光学质量 AM1.5、 25°C的测试条件下， 0.97cm2电池的 效率达到 了 42.3%。 国 际上 CPV 的主要生产商 Emcore 制备的 InGaP/(In)GaAs/Ge三结电池效率在 500倍聚光下为 39% , 1150倍聚光下达到 36.3%。伴随着 CP V技术产业化进展， 高倍聚光 (；〜 1000X)太阳能电池以其突出 的成本优势成为了 CPV产业的主要产品。 此类电池可以将数百上千倍的太阳 能通过聚光透镜浓缩聚焦到一个很小的电池芯片上发电，从而大规模节约了太 阳能电池晶片， 但是较高的聚光倍数（〜1000X )可以使聚光电池获得较大的 开路电压和短路电流的同时，也将使电池产生更大的串联电阻， 这严重影响了 电池的填充因子， 促使电池转换效率的降低。
发明内容
本发明的目的是提供一种新型的高倍聚光多结太阳能电池， 其具有较 高的开路电压和短路电流， 同时在高倍聚光条件下可以保持较高的填充因 子， 即在高倍聚光条件下仍可保持较高的光电转换效率。 根据本发明的一个方面， 提供了一种高倍聚光多结太阳能电池。 该高 倍聚光多结太阳能电池包括： 顶电池、 中电池、 底电池以及两个隧穿结。 其中， 顶电池和中电池的发射层均为渐变掺杂， 顶电池发射层的厚度比传 统多结电池的厚度大一百纳米以上。 优选地， 顶电池发射层的厚度为 0.05〜0.5 米。
优选地， 顶电池发射层的厚度为 0.3微米。
优选地， 所述顶电池和中电池中， 靠近基区的发射层为低浓度掺杂区， 其 掺杂浓度为 1 x l017/cm3〜 l x l018/cm3, 远离基区的发射层为高浓度掺杂区， 其 掺杂浓度为 1 x l018/cm3〜 1 x l019/cm3。
优选地， 顶电池发射层的掺杂浓度从 5x l017/cm3渐变到 5x l018/cm3。
优选地， 中电池发射层的掺杂浓度从 5x l017/cm3渐变到 5x l018/cm3。
根据本发明的一个方面， 提供了一种制作高倍聚光多结太阳能电池的方 法， 其包括如下步骤： 通过 MOCVD方法、 MBE方法或 UHCVD方法等外延 方法， 在所选 Ge衬底上外延生长 Ge底电池； 在 Ge底电池上外延生长 GaAs 隧穿结； 在 GaAs隧穿结上外延生长 (In) GaAs中电池的基区； 在 (In) GaAs中 电池的基区上外延生长渐变掺杂的 (In) GaAs中电池发射层， 构成 (In) GaAs中 电池； 在 (In) GaAs中电池上外延生长 AlGaAs隧穿结； 在 AlGaAs隧穿结上外 延生长 InGaP顶电池基区；在 InGaP顶电池基区上外延生长较厚的、渐变掺杂 的 InGaP顶电池发射层， 构成 InGaP顶电池。
优选地， 中电池的发射层的掺杂浓度为渐变的， 包括阶梯型渐变、 连续型 渐变； 靠近基区的发射层为低浓度掺杂区， 其掺杂浓度为 l x l017/cm3 〜 1 x l018/cm3, 远离基区的发射层为高浓度掺杂区， 其掺杂浓度为 l x l018/cm3 〜 1 x l019/cm3。
优选地， 顶电池的发射层的掺杂浓度为渐变的， 包括阶梯型渐变、 连续型 渐变；靠近基区的发射层为低浓度掺杂区， 其掺杂浓度为 l x l017/cm3 〜 1 x l018/cm3 , 远离基区的发射层为高浓度掺杂区， 其掺杂浓度为 l x l018/cm3 〜 1 x l019/cm3。
优选地， 所述顶电池和中电池发射层的掺杂浓度从 5 x l017/cm3渐变到 5x l018/cm3。
优选地， 整个顶电池发射层厚度为 0.05〜0.5微米。
传统多结太阳能电池的各子电池发射层均为均勾掺杂的，发射层厚度越薄 电池的光电转换效率越高。 然而，在高倍聚光条件下较薄的顶电池发射层将带 来更大的串联电阻， 降低了电池的填充因子， 最终影响电池在高倍聚光条件下 的转换效率。本发明涉及的一种高倍聚光多结太阳能电池， 其顶部和中电池的 发射层均使用渐变掺杂方式， 具有较高的开路电压和短路电流， 同时在高倍聚 光条件下，允许顶电池发射层具有比传统多结电池更大的厚度以降低多结电池 整体的串联电阻， 提高电池的填充因子， 最终获得较高的光电转换效率。
附图说明
附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发 明的实施例一起用于解释本发明， 但并不构成对本发明的限制。 此外， 附图数 据是描述概要， 不是按比例绘制。
图 1是本发明所涉及的一种高倍聚光多结太阳能电池侧面剖视图。
图中
100: p型 Ge衬底；
101 : n型 Ga。.5In。.5P窗口层；
200： GaAs隧穿结；
300: (In)GaAs中电池背场层；
301 : (In) GaAs中电池基区； 302： (In) GaAs中电池发射层;
303 ： (In) GaAs中电池窗口层;
400 ： AlGaAs隧穿结；
500 ： GalnP顶电池背场层；
501 ： GalnP顶电池基区；
502 ： GalnP顶电池发射层；
503 ： GalnP顶电池窗口层；
A: Ge底电池；
B: 中电池；
C: 顶电池。 具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式。 需要说明的是， 均落在本发明的保护范围之内。
实施例一
如图 1所示， 一种高倍聚光多结太阳能电池， 包括一个 Ge底电池 A, — 个中电池 B , —个顶电池 C和其间的两个隧穿结 200和 400。
更具体而言，图中显示：一 P型 Ge衬底 100,在衬底上沉积一 n型 Ga。.5In0.5P 窗口层 101 , 构成 Ge底电池 A。
在 Ge底电池 A顶部沉积一系列的重掺杂的 P型和 n型层， 构成 GaAs隧 穿结 200, 用于将 Ge底电池 A连接至中电池 B。 在构成 GaAs 隧穿结 200顶部沉积一用于降^ ^复合损失的中电池背场层 300 , 该层较佳的由 P型 AlGaAs构成。
在中电池背场层 300上沉积中电池基区 301和中电池发射层 302。 在该较 佳实例中， 中电池基区 301由 P型 (In) GaAs构成， 其厚度为 3.5微米； 中电池 发射层 302由 n型 (In) GaAs构成， n型掺杂量随着厚度的增加而逐渐地提高， 其掺杂浓度从 5xl017/cm3连续渐变到 5 xl018/cm3, 厚度为 0.1微米。 在中电池 发射层 302上沉积一由 n型 AllnP构成的中电池窗口层 303 , 形成中电池 B。 在中电池 B顶部沉积一较佳由 AlGaAs构成的隧穿结 400, 用于将中电池 B连接至顶电池 C。
在隧穿结 400顶部上沉积一较佳由 P型 AlInGaP构成的顶电池背场层 500。 在顶电池背场层 500顶部上沉积顶电池基区 501和顶电池发射层 502。 在 该较佳实例中， 顶电池基区 501由 P型 GalnP构成， 厚度为 0.8微米； 顶电池 发射层 502由 n型 GalnP构成， n型掺杂量随着厚度的增加而逐渐地提高， 其 掺杂浓度从 5 xl017/cm3连续渐变到 5xl018/cm3, 厚度为 0.3微米。 在顶电池发 射层 502上沉积一由 n型 AllnP构成的顶电池窗口层 503 , 形成顶电池 C。
实施例二 本实施例为实例一中所述的一种高倍聚光多结太阳能电池的制备工艺，其 包括子电池 A、 B、 C及各子电池之间各层的形成工艺。 其中在 MOCVD外延 生长过程中，通过调节 n型掺杂源在反应源中的流量比， 可以实现发射层的掺 杂浓度的渐变。
具体制备工艺包括如下步骤： 采用 p型掺杂的单晶锗衬底 100, 厚度为 150微米， 作为 Ge底电池的基 区。
将 P型 Ge衬底 100清洗干净， 并装入 MOCVD反应室， 首先在 750 °C下 烘烤 10分钟， 然后降温至 600 °C , 外延生长 n型 GaQ.5InQ.5P窗口层 101 , 形成 Ge底电池 A。 在 Ge底电池上外延生长中底电池的 GaAs隧穿结 200。 生长中电池 B的背场层 300 , 阻止中电池基区的光生电子扩散到底电池。 具体方法:调节 MOCVD反应室内的温度为 620 °C ,五三族源摩尔流量比为 120, 在 GaAs隧穿结 200上外延生长一层 P型 Al。.2Gao.8As作为中电池 B的背场层。 在电池 B的背场层上外延生长形成中电池 B的基区 301和发射层 302。改 变 MOCVD反应室内的五三族源摩尔流量比为 40, 在中电池 B的背场层 300 上外延生长一层 P型 In。.(nGa。.99As作为中电池 B的基区 301 ,厚度为 3.5微米。 在中电池基区 301上外延生长发射层 302。在 MOCVD外延生长过程中，在生 长初期使用较小的 n型掺杂源流量，随着发射层厚度的增加而逐渐地提高掺杂 源流量， 最终获得掺杂浓度从 5 xl017/cm3连续渐变到 5 xl018/cm3的中电池发 射层 n型 In。.mGa。.99As 302, 其厚度为 0.1微米。 在中电池 B的发射层 302上外延生长一层 n型 AllnP作为中电池 B的窗口 层 303 , 形成 In0.01Ga0.99As中电池 B。 在 In。.01Ga。.99As中电池 B上外延生长 AlGaAs隧穿结 400。 生长顶电池 C的背场层 500, 阻止顶电池基区的光生电子扩散到中电池。 具体方法： 调节 MOCVD反应室内的温度为 650 °C , 五三族源摩尔流量比为 200, 在 AlGaAs隧穿结 400上外延生长一层 p型 AlInGaP作为顶电池 C的背 场层 500。 在顶电池 C的背场层 500上外延生长形成顶电池 C的基区 501和发射层
502。 改变五三族源摩尔流量比为 180, 在电池 C的背场层 500上外延生长出 一层 P型 Gao.5In。.5P作为顶电池 C的基区 501 , 厚度为 0.8微米。 在顶电池 C 的基区 501上外延生长顶电池发射层 502。在 MOCVD外延生长过程中， 在生 长初期使用较小的 n型掺杂源流量，随着发射层厚度的增加而逐渐地提高掺杂 源流量， 最终获得掺杂浓度从 5xl017/cm3连续渐变到 5xl018/cm3的 n 型 Gao.5Ino.5P顶电池发射层 502, 其厚度为 0.3微米。
在顶电池 C的发射层 502上外延生长一层 n型 AllnP作为顶电池 C的窗口 层 503 , 形成 Gao.5Ino.5P顶电池 C。

Claims

权 利 要 求
1、 一种高倍聚光多结太阳能电池， 包含： 顶电池、 中电池、 底电池、 顶 电池与中电池之间的隧穿结以及中电池与底电池之间的隧穿结， 其特征在于： 顶电池和中电池的发射层的掺杂浓度都为渐变掺杂。
2、 根据权利要求 1所述的高倍聚光多结太阳能电池， 其特征在于： 所述 顶电池发射层的厚度为 0.05〜0.5 米。
3、 根据权利要求 1所述的高倍聚光多结太阳能电池， 其特征在于： 所述 顶电池发射层的厚度为 0.3微米。
4、 根据权利要求 1所述的高倍聚光多结太阳能电池， 其特征在于： 所述 顶电池和中电池中，靠近基区的发射层的掺杂浓度低于远离基区的发射层的掺 杂浓度。
5、 根据权利要求 4所述的高倍聚光多结太阳能电池， 其特征在于： 所述 顶电池的发射层的掺杂浓度从 5 x l017/cm3渐变到 5x l018/cm3。
6、 根据权利要求 4所述的高倍聚光多结太阳能电池， 其特征在于： 所述 中电池的发射层的掺杂浓度从 5 x l017/cm3渐变到 5x l018/cm3。
7、 一种制作高倍聚光多结太阳能电池的方法， 包括如下步骤：
制作底电池；
在所述底电池上外延生长第一隧穿结；
在所述第一隧穿结上制作中电池， 所述中电池具有掺杂浓度渐变的发射 层；
在所述中电池上外延生长第二隧穿结；
在所述第二隧穿结上制作顶电池， 所述顶电池具有掺杂浓度渐变的发射 层。
8、 根据权利要求 7所述的制作高倍聚光多结太阳能电池的方法， 其特征 在于，在所述第一隧穿结上制作中电池， 所述中电池具有掺杂浓度渐变的发射 层步骤包括：
在所述第一隧穿结上外延生长中电池的背场层；
在所述中电池的背场层上外延生长中电池的基区；
在所述中电池的基区上外延生长掺杂浓度渐变的中电池的发射层； 在所述中电池的发射层上外延生长中电池的窗口层。
9、 根据权利要求 8所述的制作高倍聚光多结太阳能电池的方法， 其特征 在于：所述中电池的基区上外延生长掺杂量随着厚度增加而逐渐地提高的中电 池的发射层。
10、根据权利要求 7所述的制作高倍聚光多结太阳能电池的方法， 其特征 在于，在所述第二隧穿结上制作顶电池， 所述顶电池具有掺杂浓度渐变的发射 层步骤包括：
在所述第二隧穿结上外延生长顶电池的背场层；
在所述顶电池的背场层上外延生长顶电池的基区；
在所述顶电池的基区上外延生长掺杂浓度渐变的顶电池的发射层； 在所述顶电池的发射层上外延生长顶电池的窗口层。
1 1、 根据权利要求 10所述的制作高倍聚光多结太阳能电池的方法， 其特 征在于：在所述顶电池的基区上外延生长掺杂量随着厚度增加而逐渐地提高的 顶电池的发射层。
12、 根据权利要求 10所述的制作高倍聚光多结太阳能电池的方法， 其特 征在于： 在所述顶电池基区上外延生长厚度为 0.05〜0.5 微米的顶电池的发射 层。
13、 根据权利要求 10所述的制作高倍聚光多结太阳能电池的方法， 其特 征在于： 在所述顶电池基区上外延生长厚度为 0.3微米的顶电池的发射层。
14、根据权利要求 7所述的制作高倍聚光多结太阳能电池的方法， 其特征 在于， 制作底电池步骤包括：
提供 Ge衬底；
在所述 Ge衬底上外延生长底电池的窗口层。
15、根据权利要求 7所述的制作高倍聚光多结太阳能电池的方法， 其特征 在于:所述顶电池的发射层和中电池的发射层的掺杂浓度分别从 5 x l017/cm3渐 变到 5x l 018/cm3。
16、根据权利要求 7所述的制作高倍聚光多结太阳能电池的方法， 其特征 过调节掺杂源在反应源中的流量比， 外延生长中电池的发射层和 /或顶电池的 发射层。
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