CN106784108A - 一种双结薄膜太阳能电池组件及其制作方法 - Google Patents
一种双结薄膜太阳能电池组件及其制作方法 Download PDFInfo
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- CN106784108A CN106784108A CN201510811983.1A CN201510811983A CN106784108A CN 106784108 A CN106784108 A CN 106784108A CN 201510811983 A CN201510811983 A CN 201510811983A CN 106784108 A CN106784108 A CN 106784108A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201510811983.1A CN106784108B (zh) | 2015-11-20 | 2015-11-20 | 一种双结薄膜太阳能电池组件及其制作方法 |
PCT/CN2016/104204 WO2017084492A1 (zh) | 2015-11-20 | 2016-11-01 | 双结薄膜太阳能电池组件及其制作方法 |
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CN201510811983.1A CN106784108B (zh) | 2015-11-20 | 2015-11-20 | 一种双结薄膜太阳能电池组件及其制作方法 |
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CN106784108A true CN106784108A (zh) | 2017-05-31 |
CN106784108B CN106784108B (zh) | 2019-05-31 |
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CN201510811983.1A Active CN106784108B (zh) | 2015-11-20 | 2015-11-20 | 一种双结薄膜太阳能电池组件及其制作方法 |
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CN (1) | CN106784108B (zh) |
WO (1) | WO2017084492A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112713205A (zh) * | 2021-03-29 | 2021-04-27 | 南昌凯迅光电有限公司 | 一种高抗辐照三结砷化镓太阳电池及其制备方法 |
Citations (9)
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CN1431721A (zh) * | 2003-01-14 | 2003-07-23 | 河北科技大学 | 一种太阳能转换多结极联光电池 |
CN101459204A (zh) * | 2007-12-13 | 2009-06-17 | 昂科公司 | 反项变质多结太阳能电池中的指数掺杂层 |
CN101499493A (zh) * | 2009-02-23 | 2009-08-05 | 东南大学 | 一种三结太阳能电池 |
CN101651169A (zh) * | 2009-07-07 | 2010-02-17 | 扬州汉光光电有限公司 | 一种高效太阳电池的制备方法 |
US20100244169A1 (en) * | 2009-03-31 | 2010-09-30 | Sony Corporation | Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure |
WO2011112612A1 (en) * | 2010-03-08 | 2011-09-15 | Alliance For Sustainable Energy, Llc | Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices |
CN102790120A (zh) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge三结级联太阳能电池及其制备方法 |
WO2012174952A1 (zh) * | 2011-06-22 | 2012-12-27 | 厦门市三安光电科技有限公司 | 一种高倍聚光多结太阳能电池及其制备方法 |
CN104241416A (zh) * | 2014-09-18 | 2014-12-24 | 瑞德兴阳新能源技术有限公司 | 一种含量子阱结构的三结太阳能电池 |
Family Cites Families (3)
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---|---|---|---|---|
CN101345268B (zh) * | 2007-07-13 | 2012-05-30 | 晶元光电股份有限公司 | 具有结合结构的半导体光电元件 |
EP2650930A1 (de) * | 2012-04-12 | 2013-10-16 | AZURSPACE Solar Power GmbH | Solarzellenstapel |
CN104091849B (zh) * | 2014-07-29 | 2017-01-18 | 天津三安光电有限公司 | 多结太阳能电池及其制备方法 |
-
2015
- 2015-11-20 CN CN201510811983.1A patent/CN106784108B/zh active Active
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2016
- 2016-11-01 WO PCT/CN2016/104204 patent/WO2017084492A1/zh active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1431721A (zh) * | 2003-01-14 | 2003-07-23 | 河北科技大学 | 一种太阳能转换多结极联光电池 |
CN101459204A (zh) * | 2007-12-13 | 2009-06-17 | 昂科公司 | 反项变质多结太阳能电池中的指数掺杂层 |
CN101499493A (zh) * | 2009-02-23 | 2009-08-05 | 东南大学 | 一种三结太阳能电池 |
US20100244169A1 (en) * | 2009-03-31 | 2010-09-30 | Sony Corporation | Solid-state imaging device, fabrication method thereof, imaging apparatus, and fabrication method of anti-reflection structure |
CN101651169A (zh) * | 2009-07-07 | 2010-02-17 | 扬州汉光光电有限公司 | 一种高效太阳电池的制备方法 |
WO2011112612A1 (en) * | 2010-03-08 | 2011-09-15 | Alliance For Sustainable Energy, Llc | Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices |
WO2012174952A1 (zh) * | 2011-06-22 | 2012-12-27 | 厦门市三安光电科技有限公司 | 一种高倍聚光多结太阳能电池及其制备方法 |
CN102790120A (zh) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge三结级联太阳能电池及其制备方法 |
CN104241416A (zh) * | 2014-09-18 | 2014-12-24 | 瑞德兴阳新能源技术有限公司 | 一种含量子阱结构的三结太阳能电池 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112713205A (zh) * | 2021-03-29 | 2021-04-27 | 南昌凯迅光电有限公司 | 一种高抗辐照三结砷化镓太阳电池及其制备方法 |
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WO2017084492A1 (zh) | 2017-05-26 |
CN106784108B (zh) | 2019-05-31 |
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Effective date of registration: 20210907 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: Room a129-1, No. 10, Zhongxing Road, science and Technology Park, Changping District, Beijing Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |