WO2012165116A1 - 誘電体セラミック及び単板コンデンサ - Google Patents

誘電体セラミック及び単板コンデンサ Download PDF

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WO2012165116A1
WO2012165116A1 PCT/JP2012/061993 JP2012061993W WO2012165116A1 WO 2012165116 A1 WO2012165116 A1 WO 2012165116A1 JP 2012061993 W JP2012061993 W JP 2012061993W WO 2012165116 A1 WO2012165116 A1 WO 2012165116A1
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dielectric ceramic
content
parts
mole
dielectric
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French (fr)
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一二 久代
石川　達也
智光 山西
直樹 河原
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to CN201280021148.2A priority Critical patent/CN103502178A/zh
Priority to KR1020137031511A priority patent/KR101559036B1/ko
Priority to JP2013517942A priority patent/JP5742938B2/ja
Priority to TW101117638A priority patent/TWI435857B/zh
Publication of WO2012165116A1 publication Critical patent/WO2012165116A1/ja
Priority to US14/093,767 priority patent/US9001494B2/en
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    • H01G4/00—Fixed capacitors; Processes of their manufacture
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    • H01G4/018—Dielectrics
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Definitions

  • the present invention relates to a dielectric ceramic, and more particularly to a dielectric ceramic used for a capacitor for a medium to high voltage application.
  • Leakage current i is defined by the following equation (1) where frequency f, capacitance C, and voltage V are defined.
  • Formula (1): i 2 ⁇ fCV
  • a dielectric ceramic described in Patent Document 1 is known as a material having a small capacitance temperature change.
  • This dielectric ceramic is formed by firing a mixture of 100.0 parts by weight of a basic component and 0.2 to 5.0 parts by weight of an additive component, and the basic component is (1- ⁇ - ⁇ ) ( Ba k- (x + y) M x L y) O k TiO 2 + ⁇ JZrO 3 + ⁇ (R 1-z R 'z) O 3/2 + ⁇ AO 5/2 + ⁇ D
  • M is Mg and / or Zn
  • J is Ca and / or Ba
  • R is one or more elements selected from La, Ce, Pr, Nd, Pm, Sm and Eu
  • R ′ is Sc, Y, One or more elements selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu
  • A is selected from P and / or V
  • D is selected from Cr, Mn, Fe, Co
  • the above dielectric ceramic is a material for a multilayer ceramic capacitor having a base metal such as Ni as an internal electrode.
  • this dielectric ceramic is used for a capacitor for medium to high voltage applications, reliability after a moisture resistance load test is achieved. There was a problem.
  • the present invention has been made in view of the above problems, and provides a dielectric ceramic that has a small change in capacitance with temperature and that has good reliability after a moisture resistance load test even when used in a medium- or high-voltage capacitor.
  • the purpose is to do.
  • the dielectric ceramic of the present invention is mainly composed of a perovskite type compound containing Ba and Ti, and further contains Re1 (Re1 is at least one element of La and Nd), Y, Mg, and Fe, and has a Ti content.
  • Re1 is at least one element of La and Nd
  • Y is 0.1 to 3 mol parts
  • Mg is 0.3 to 13 mol parts
  • the Fe content is 0.01 to 5 mole parts.
  • the main component perovskite compound further contains Ca, and the molar ratio ⁇ of Ba / (Ba + Ca) is 0.4 ⁇ ⁇ ⁇ 1. It is preferable that
  • the dielectric ceramic of the present invention is preferably fired in the atmosphere.
  • the present invention is also directed to a single plate capacitor including the above dielectric ceramic and electrodes formed by sputtering on both main surfaces of the dielectric ceramic.
  • the present invention it is possible to provide a dielectric ceramic that has a small change in capacitance with temperature and that has good reliability after a moisture resistance load test even when used in a capacitor for medium to high voltage applications.
  • FIG. 1 is a partially cutaway front view of a single plate capacitor as an example of an electronic component manufactured using the dielectric ceramic of the present invention.
  • This single plate capacitor is used for medium and high voltage applications, and is electrically connected to the electrode 2 via the dielectric ceramic 1, the electrode 2 formed on both main surfaces of the dielectric ceramic 1, and the solder 3.
  • a pair of lead wires 4 a and 4 b and an exterior resin 5 covering the dielectric ceramic 1 are provided.
  • the dielectric ceramic of the present invention is mainly composed of a perovskite type compound containing Ba and Ti. Then, 0.15 to 3 mol parts of Re1 (Re1 is at least one element of La and Nd), 0.1 to 3 mol parts of Y, and 0.1 to 3 mol parts of Mg with respect to 100 mol parts of Ti. 3 to 13 mol parts and Fe in the range of 0.01 to 5 mol parts. In this case, it is possible to obtain a single plate capacitor having a small change in capacitance with temperature and having good reliability after the moisture resistance load test.
  • the dielectric ceramic of the present invention may contain rare earth elements, V, Al, Ni, and the like as long as the object of the present invention is not impaired.
  • the amount of A site, B site and O of the perovskite type compound may not be the stoichiometric composition of 1: 1: 3, and may deviate from the stoichiometric composition.
  • an oxide or carbonate powder of Ba, Ca, Ti is prepared as a main starting material. These starting material powders are weighed and mixed and ground in a liquid using media. After drying, the obtained mixed powder is heat-treated to obtain a main component powder.
  • This method is generally called a solid-phase synthesis method, but as another method, a wet synthesis method such as a hydrothermal synthesis method, a hydrolysis method, or an oxalic acid method may be used.
  • La, Nd, Y, Mg, Fe oxide, hydroxide or carbohydrate powder is added to the main component powder.
  • These powders are not limited to oxide powders, hydroxide powders, or carbonate powders as long as the object of the present invention is not impaired.
  • a binder is added, mixed in the liquid, dried and granulated to obtain a ceramic raw material powder.
  • the ceramic raw material powder is formed into a predetermined disk shape by a press forming method.
  • the obtained molded body is fired at a predetermined temperature to obtain the dielectric ceramic 1.
  • electrodes 2 are formed on both main surfaces of the dielectric ceramic 1.
  • An example of a method for forming the electrode 2 is a sputtering method. Other thin film forming methods such as ion plating may be used.
  • the electrode 2 and the lead wires 4 a and 4 b are connected via the solder 3. Thereafter, an exterior resin is formed by a resin molding method or the like. Through the above process, a single plate capacitor is manufactured.
  • the calcium titanate powder and La 2 O 3 , Nd 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Y 2 O 3 , Dy 2 O 3 , Mg (OH) 2 , Fe 2 O 3 , MnCO 3 , Co 3 O 4 were weighed so as to have the ratios shown in Table 1 and mixed to obtain a mixture.
  • ⁇ in Table 1 is a molar ratio (Ba content) / (total content of Ba and Ca) in the mixture.
  • (Ba, Ca) / Ti in Table 1 is a molar ratio (total content of Ba and Ca) / (Ti content) in the mixture.
  • Sample numbers 1 to 6 are obtained by changing the La content.
  • Sample numbers 7 to 10 were obtained by changing the Y content.
  • Sample numbers 11 to 13 are obtained by changing the element type of Re1.
  • Sample Nos. 14 to 16 are obtained by changing the element type of Re2.
  • Sample numbers 17 to 20 were obtained by changing the Mg content.
  • Sample numbers 21 to 24 are obtained by changing the Fe content.
  • Sample numbers 25 and 26 are obtained by changing the element type of M1.
  • Sample numbers 27 and 28 are obtained by changing the (Ba, Ca) / Ti ratio.
  • Sample numbers 29 and 30 are obtained by changing the ⁇ of Ba ⁇ Ca 1- ⁇ TiO 3 .
  • this ceramic raw material powder was poured into a mold and molded at a pressure of 1 ton / cm 2 . And the obtained molded object was baked at 1350 degreeC in air
  • electrodes mainly composed of Cu were formed on both main surfaces of the dielectric ceramic by a sputtering method.
  • the dielectric constant ( ⁇ r), dielectric loss tangent (tan ⁇ ), and temperature characteristics of dielectric constant were measured under the following conditions.
  • Dielectric constant and dielectric loss tangent were measured at a temperature of 20 ° C. by applying a current of 1 kHz and 1 Vrms.
  • the temperature characteristics of dielectric constant were measured for two types of Y5R characteristics by EIA and B characteristics by JIS.
  • EIA the change rate of the dielectric constant in the temperature range of ⁇ 30 ° C. to + 85 ° C. is within ⁇ 15% with respect to the dielectric constant at + 20 ° C.
  • the change rate of the dielectric constant in the temperature range of ⁇ 25 ° C. to + 85 ° C. is within ⁇ 10% with respect to the dielectric constant at + 20 ° C.
  • the electrodes and lead terminals were connected by solder. Thereafter, the dielectric ceramic was covered with an epoxy resin to obtain a single plate capacitor.
  • the sintered dielectric ceramic was dissolved in a solvent and analyzed by ICP emission spectroscopy.
  • the composition was almost the same as shown in Table 1. It was confirmed.
  • the moisture resistance load test was conducted on this single plate capacitor.
  • a voltage of 60 Hz and 2.0 kVrms was applied for 4000 hours under the conditions of 60 ° C. and relative humidity of 90 to 95%.
  • the insulation resistance was measured at a temperature of 20 ° C. by applying a current of DC 500V.
  • the insulation resistance was 10 ⁇ 10 10 ⁇ or higher.
  • the AC voltage characteristics are as follows: in the temperature chamber maintained at + 25 ° C., the AC voltage is changed to 1 Vrms, 200 Vrms, and 400 Vrms, and the change rate of the dielectric constant of 200 Vrms and the change of the dielectric constant of 400 Vrms with respect to the dielectric constant at 1 Vrms. Asked. The rate of change in dielectric constant was determined to be non-defective within 40% under the condition of 200 Vrms and within 55% under the condition of 400 Vrms.
  • the main component is a perovskite type compound containing Ba and Ti, and Re1 (Re1 is at least one element of La and Nd) is 0.15 to 3 with respect to 100 mole parts of Ti.
  • the dielectric ceramic containing the mol part, Y in the range of 0.1 to 3 mol part, Mg in the range of 0.3 to 13 mol part, and Fe in the range of 0.01 to 5 mol part satisfies the Y5R and B characteristics. It was revealed that the insulation resistance and AC voltage characteristics after the moisture resistance load test were good.

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  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Capacitors (AREA)

Abstract

　静電容量の温度変化が小さく、中高圧用途のコンデンサに用いた場合にも耐湿負荷試験後の信頼性が良好な誘電体セラミックを提供する。　ＢａおよびＴｉを含むペロブスカイト型化合物を主成分とし、Ｔｉの含有量１００モル部に対して、Ｒｅ１（Ｒｅ１はＬａ、Ｎｄの少なくとも１種の元素）を０．１５～３モル部、Ｙを０．１～３モル部、Ｍｇを０．３～１３モル部、Ｆｅを０．０１～５モル部の範囲で含有することを特徴とする。

Description

誘電体セラミック及び単板コンデンサ
　本発明は、誘電体セラミック、特に中高圧用途のコンデンサに用いる誘電体セラミックに関するものである。
　近年、中高圧用途（例えば直流定格電圧１ｋＶ～６ｋＶ）のコンデンサに使用される誘電体セラミックには、静電容量の温度変化の抑制とともに、漏れ電流の低減が求められている。漏れ電流ｉは、周波数ｆ、容量Ｃ、電圧Ｖとすると、以下の式（１）で定義される。
式（１）：ｉ＝２πｆＣＶ
　式（１）より、容量値Ｃが大きくなると、漏れ電流は大きくなることが分かる。そのため、容量値の大きい中高圧用途のコンデンサでは、特に漏れ電流の低減が求められ、これに使用される誘電体セラミックは絶縁性を向上させる必要がある。
　従来、静電容量の温度変化の小さい材料として、特許文献１に記載の誘電体セラミックが知られている。この誘電体セラミックは、１００．０重量部の基本成分と、０．２～５．０重量部の添加成分との混合物を焼成したものからなり、基本成分が、（１－γ－η）（Ｂａk-(x+y)ＭxＬy）ＯkＴｉＯ2 +ηＪＺｒＯ3＋γ（Ｒ1-zＲ’z）Ｏ3/2＋αＡＯ5/2+βＤ（ＭはＭｇ及び／又はＺｎ、ＬはＣａ及び／又はＳｒ、ＪはＣａ及び／又はＢａ、ＲはＬａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｓｍ及びＥｕから選択された１種又は２種以上の元素、Ｒ’はＳｃ、Ｙ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ及びＬｕから選択された１種又は２種以上の元素、ＡはＰ及び／又はＶ、ＤはＣｒ、Ｍｎ、Ｆｅ、Ｃｏ及びＮｉから選択された１種又は２種以上の酸化物）で表わされる物質からなり、添加成分はＬｉ2ＯとＳｉＯ2とＭＯ（ＭＯはＢａＯ、ＳｒＯ、ＣａＯ、ＭｇＯ及びＺｎＯから選択された１種又は２種以上の酸化物）とするものである。
特開平７－２７２９７２号公報
　ところが、上記の誘電体セラミックはＮｉ等の卑金属を内部電極とする積層セラミックコンデンサ向けの材料であり、この誘電体セラミックを中高圧用途のコンデンサに用いた場合には、耐湿負荷試験後の信頼性に問題が生じていた。
　本発明は、かかる課題に鑑みてなされたものであり、静電容量の温度変化が小さく、中高圧用途のコンデンサに用いた場合にも耐湿負荷試験後の信頼性が良好な誘電体セラミックを提供することを目的とする。
　本発明の誘電体セラミックは、ＢａおよびＴｉを含むペロブスカイト型化合物を主成分とし、さらにＲｅ１（Ｒｅ１はＬａ、Ｎｄの少なくとも１種の元素）、Ｙ、Ｍｇ、Ｆｅを含み、Ｔｉの含有量を１００モル部としたとき、Ｒｅ１の含有量が０．１５～３モル部であり、Ｙの含有量が０．１～３モル部であり、Ｍｇの含有量が０．３～１３モル部であり、Ｆｅの含有量が０．０１～５モル部であることを特徴とする。
　また、本発明の誘電体セラミックでは、主成分のペロブスカイト型化合物が、さらにＣａを任意で含み、Ｂａ／（Ｂａ＋Ｃａ）のモル比αが、０．４≦α≦１
であることが好ましい。
　また、本発明の誘電体セラミックでは、主成分のペロブスカイト型化合物が、チタン酸バリウムであり、αがα＝１であることが好ましい。
　また、本発明の誘電体セラミックでは、誘電体セラミックは大気中で焼成されたものであることが好ましい。
　また、本発明は、上記の誘電体セラミックと、誘電体セラミックの両主面にスパッタリング法により形成された電極と、を備える単板コンデンサにも向けられる。
　本発明によれば、静電容量の温度変化が小さく、中高圧用途のコンデンサに用いた場合にも耐湿負荷試験後の信頼性が良好な誘電体セラミックを提供することが可能である。
単板コンデンサの一部破断正面図である。
　以下において、本発明を実施するための形態について説明する。
　図１は、本発明の誘電体セラミックを使用して製造された電子部品の一例である単板コンデンサの一部破断正面図である。この単板コンデンサは、中高圧用途に用いられ、誘電体セラミック１と、誘電体セラミック１の両主面に形成された電極２と、はんだ３を介して電極２と電気的に接続されている一対のリード線４ａ、４ｂと、誘電体セラミック１を被覆する外装樹脂５と、を備えている。
　本発明の誘電体セラミックは、ＢａおよびＴｉを含むペロブスカイト型化合物を主成分としている。そして、Ｔｉの含有量１００モル部に対して、Ｒｅ１（Ｒｅ１はＬａ、Ｎｄの少なくとも１種の元素）を０．１５～３モル部、Ｙを０．１～３モル部、Ｍｇを０．３～１３モル部、Ｆｅを０．０１～５モル部の範囲で含有する。この場合に、静電容量の温度変化が小さく、耐湿負荷試験後の信頼性が良好な単板コンデンサが得られる。
　なお、本発明の誘電体セラミックには、本発明の目的を損なわない範囲において、希土類元素、Ｖ、Ａｌ、Ｎｉ等が含まれていてもよい。
　また、ペロブスカイト型化合物のＡサイト、ＢサイトおよびＯの量は１：１：３の化学量論組成でなくてもよく、化学量論組成からずれていてもよい。
　次に、本発明の誘電体セラミックの製造方法について、図１の単板コンデンサを例にとり説明する。
　まず、主成分の出発原料として、Ｂａ、Ｃａ、Ｔｉの酸化物または炭酸化物の粉末を用意する。これら出発原料の粉末を秤量して、液中にてメディアを用いて混合粉砕する。乾燥後、得られた混合粉末を熱処理することにより、主成分粉末を得る。この方法は一般に固相合成法と呼ばれるものであるが、他の方法として、水熱合成法、加水分解法、シュウ酸法等の湿式合成法を用いても構わない。
　次に、この主成分粉末に対し、所定量のＬａ、Ｎｄ、Ｙ、Ｍｇ、Ｆｅの酸化物、水酸化物または炭水化物の粉末を添加する。これらの粉末としては、本発明の目的を損なわない限り酸化物粉末、水酸化物粉末、または炭酸化物粉末に限られるものではない。そして、バインダを添加して液中にて混合し、乾燥及び造粒して、セラミック原料粉末を得る。
　次に、上記のセラミック原料粉末を用いて、プレス成形法により所定の円板状に成形する。そして得られた成形体を所定の温度で焼成して、誘電体セラミック１を得る。
　次に、誘電体セラミック１の両主面に電極２を形成する。電極２の形成方法の例としては、スパッタリング法が挙げられる。また、イオンプレーティング等の他の薄膜形成法でも良い。
　次に、電極２とリード線４ａ、４ｂとをはんだ３を介して接続する。その後、樹脂モールド法等により外装樹脂を形成する。以上の工程により、単板コンデンサが作製される。
　［実験例］
　まず、ＢａＣＯ3とＴｉＯ2の粉末を所定のモル量秤量した。そして、ボールミルで混合し、乾燥後１１００℃で２時間仮焼して、ペロブスカイト型化合物であるチタン酸バリウムの粉末を得た。一方、ＣａＣＯ3とＴｉＯ2の粉末を所定のモル量秤量した。そして、ボールミルで混合し、乾燥後１１００℃で２時間仮焼して、ペロブスカイト型化合物であるチタン酸カルシウムの粉末を得た。
　次に、得られた前記チタン酸バリウム粉末に対して、前記チタン酸カルシウム粉末とＬａ2Ｏ3、Ｎｄ2Ｏ3、Ｈｏ2Ｏ3、Ｅｒ2Ｏ3、Ｙ2Ｏ3、Ｄｙ2Ｏ3、Ｍｇ（ＯＨ）2、Ｆｅ2Ｏ3、ＭｎＣＯ3、Ｃｏ3Ｏ4の各粉末を表１に示す割合になるように秤量し、混合して、混合物を得た。なお、表１におけるαは、前記混合物中のモル比（Ｂａの含有量）／（ＢａとＣａの合計含有量）である。また、表１における（Ｂａ，Ｃａ）／Ｔｉは、前記混合物中のモル比（ＢａとＣａの合計含有量）／（Ｔｉの含有量）である。また、表１におけるＲｅ１（Ｒｅ１＝Ｌａ、Ｎｄ、Ｈｏ、Ｅｒ）、Ｒｅ２（Ｒｅ２＝Ｙ、Ｄｙ、Ｅｒ、Ｈｏ）、Ｍｇ、Ｍ１（Ｍ１＝Ｆｅ、Ｍｎ、Ｃｏ）の含有量は、前記混合物中のＴｉ１００モル部に対するモル部である。この混合物に酢酸ビニルのエマルジョン５０％溶液を１０重量％添加して、ボールミルで混合した。その後、乾燥及び造粒して、セラミック原料粉末を得た。
Figure JPOXMLDOC01-appb-T000001
　試料番号１～６は、Ｌａの含有量を変化させたものである。試料番号７～１０は、Ｙの含有量を変化させたものである。試料番号１１～１３はＲｅ１の元素の種類を変化させたものである。試料番号１４～１６はＲｅ２の元素の種類を変化させたものである。試料番号１７～２０はＭｇの含有量を変化させたものである。試料番号２１～２４はＦｅの含有量を変化させたものである。試料番号２５、２６はＭ１の元素の種類を変化させたものである。試料番号２７、２８は、（Ｂａ，Ｃａ）／Ｔｉ比を変化させたものである。試料番号２９、３０は、ＢａαＣａ1-αＴｉＯ3のαを変化させたものである。
　なお、得られたセラミック原料粉末をＩＣＰ発光分光分析したところ、表１に示した調合組成とほとんど同一であることが確認された。
　次に、このセラミック原料粉末を金型に注入して、１ｔｏｎ／ｃｍ2の圧力で成形した。そして、得られた成形体を大気雰囲気中１３５０℃で２時間焼成して、直径８．３ｍｍ、厚さ１．０ｍｍの円板状の誘電体セラミックを得た。
　次に、この誘電体セラミックの両主面に、スパッタリング法によりＣｕを主成分とした電極を形成した。
　この電極の形成された誘電体セラミックについて、誘電率（εｒ）、誘電正接（ｔａｎδ）、及び誘電率の温度特性を以下の条件で測定した。
　誘電率と誘電正接は、１ｋＨｚ、１Ｖｒｍｓの電流を通電して、２０℃の温度で測定した。誘電率の温度特性は、ＥＩＡによるＹ５Ｒ特性とＪＩＳによるＢ特性の２種類について測定した。ＥＩＡによるＹ５Ｒ特性では、－３０℃～＋８５℃の温度域での誘電率の変化率が＋２０℃での誘電率を基準として±１５％以内であることとなっている。また、ＪＩＳによるＢ特性では、－２５℃～＋８５℃の温度域での誘電率の変化率が＋２０℃での誘電率を基準として±１０％以内であることとなっている。
　次に、電極とリード端子をはんだで接続した。その後、エポキシ樹脂で誘電体セラミックを覆うことにより、単板コンデンサを得た。
　なお、得られた単板コンデンサからエポキシ樹脂、リード端子、電極を除去後、焼結した誘電体セラミックを溶剤により溶解し、ＩＣＰ発光分光分析したところ、表１に示した組成と殆ど同一であることが確認された。
　この単板コンデンサについて、耐湿負荷試験を実施した。耐湿負荷試験は６０℃、相対湿度９０～９５％の条件下で、６０Ｈｚ、２．０ｋＶｒｍｓの電圧を４０００時間印加した。
　その後、各条件の試料について、絶縁抵抗（ＩＲ）とＡＣ電圧特性を測定した。
　絶縁抵抗は、直流５００Ｖの電流を通電して、２０℃の温度で測定した。絶縁抵抗は、１０×１０10Ω以上を良品とした。
　また、ＡＣ電圧特性は、＋２５℃に保持された温度槽内で、交流電圧を１Ｖｒｍｓ、２００Ｖｒｍｓ、４００Ｖｒｍｓと変化させて、１Ｖｒｍｓでの誘電率に対する２００Ｖｒｍｓの誘電率と４００Ｖｒｍｓの誘電率の変化率を求めた。誘電率の変化率は、２００Ｖｒｍｓの条件で４０％以内、かつ、４００Ｖｒｍｓの条件で５５％以内を良品とした。
　これらの評価結果を表２に示す。なお、表１、表２で＊印を付したものは、本発明の範囲外のものである。
Figure JPOXMLDOC01-appb-T000002
　表２の結果より、ＢａおよびＴｉを含むペロブスカイト型化合物を主成分とし、Ｔｉの含有量１００モル部に対して、Ｒｅ１（Ｒｅ１はＬａ、Ｎｄの少なくとも１種の元素）を０．１５～３モル部、Ｙを０．１～３モル部、Ｍｇを０．３～１３モル部、Ｆｅを０．０１～５モル部の範囲で含有する誘電体セラミックでは、Ｙ５Ｒ特性とＢ特性を満足し、耐湿負荷試験後の絶縁抵抗とＡＣ電圧特性が良好であることが明らかになった。
　１　誘電体セラミック
　２　電極
　３　はんだ
　４ａ、４ｂ　リード線
　５　外装樹脂

Claims (5)

  1. 　ＢａおよびＴｉを含むペロブスカイト型化合物を主成分とし、さらにＲｅ１（Ｒｅ１はＬａ、Ｎｄの少なくとも１種の元素）、Ｙ、Ｍｇ、Ｆｅを含む誘電体セラミックであって、
    　Ｔｉの含有量を１００モル部としたとき、
    　Ｒｅ１の含有量が０．１５～３モル部であり、
    　Ｙの含有量が０．１～３モル部であり、
    　Ｍｇの含有量が０．３～１３モル部であり、
    　Ｆｅの含有量が０．０１～５モル部であることを特徴とする誘電体セラミック。
  2. 　前記主成分の前記ペロブスカイト型化合物が、さらにＣａを任意で含み、
    　Ｂａ／（Ｂａ＋Ｃａ）のモル比αが、０．４≦α≦１であることを特徴とする、請求項１に記載の誘電体セラミック。
  3. 　前記主成分の前記ペロブスカイト型化合物が、チタン酸バリウムであり、前記αがα＝１であることを特徴とする、請求項２に記載の誘電体セラミック。
  4. 　前記誘電体セラミックは大気中で焼成されたものであることを特徴とする、請求項１～３のいずれか１項に記載の誘電体セラミック。
  5. 　請求項１～４のいずれか１項に記載の誘電体セラミックと、前記誘電体セラミックの両主面にスパッタリング法により形成された電極と、を備える単板コンデンサ。

    　
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JP2007234677A (ja) * 2006-02-27 2007-09-13 Murata Mfg Co Ltd 誘電体セラミック組成物、およびそれを用いた積層セラミックコンデンサ
WO2009037922A1 (ja) * 2007-09-19 2009-03-26 Murata Manufacturing Co., Ltd. 誘電体セラミック、及び積層セラミックコンデンサ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016139801A (ja) * 2015-01-26 2016-08-04 Tdk株式会社 薄膜キャパシタ
JP2021148996A (ja) * 2020-03-19 2021-09-27 株式会社リコー 電源装置及び画像形成装置

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TW201323373A (zh) 2013-06-16
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