WO2012161304A1 - シンチレータパネルおよびシンチレータパネルの製造方法 - Google Patents
シンチレータパネルおよびシンチレータパネルの製造方法 Download PDFInfo
- Publication number
- WO2012161304A1 WO2012161304A1 PCT/JP2012/063441 JP2012063441W WO2012161304A1 WO 2012161304 A1 WO2012161304 A1 WO 2012161304A1 JP 2012063441 W JP2012063441 W JP 2012063441W WO 2012161304 A1 WO2012161304 A1 WO 2012161304A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- partition
- coating film
- partition wall
- scintillator panel
- mass
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/007—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character containing a dispersed phase, e.g. particles, fibres or flakes, in a continuous phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/006—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
- C03C17/008—Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28
- C03C17/009—Mixtures of organic and inorganic materials, e.g. ormosils and ormocers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/44—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the composition of the continuous phase
- C03C2217/445—Organic continuous phases
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
- C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
- C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
- C03C2217/475—Inorganic materials
Definitions
- This invention relates to the scintillator panel which comprises the radiation detection apparatus used for a medical diagnostic apparatus, a nondestructive inspection apparatus, etc.
- X-ray images using films have been widely used in medical practice.
- digital radiation such as computed radiography (CR) and flat panel type radiation detectors (flat panel detector: FPD) has been used.
- Detection devices have been developed.
- a scintillator panel In a flat plate X-ray detector (FPD), a scintillator panel is used to convert radiation into visible light.
- the scintillator panel includes an X-ray phosphor such as cesium iodide (CsI), and the X-ray phosphor emits visible light in response to the irradiated X-rays, and the light emission is converted into an electrical signal by a TFT or CCD. Is converted into digital image information.
- CsI cesium iodide
- TFT or CCD TFT or CCD. Is converted into digital image information.
- FPD has a problem that the S / N ratio is low. This is because visible light is scattered by the phosphor itself when the X-ray phosphor emits light. In order to reduce the influence of this light scattering, a method of filling a phosphor in a cell partitioned by a partition has been proposed (Patent Documents 1 to 4).
- a conventionally used method is a method of etching a silicon wafer or a screen printing method using a glass paste which is a mixture of a pigment or ceramic powder and a low-melting glass powder.
- the size of the scintillator panel that can be formed is limited by the size of the silicon wafer, and a large size such as a 500 mm square cannot be obtained.
- the multi-layer screen printing method using glass paste high-precision processing is difficult due to changes in the dimensions of the screen printing plate.
- a certain partition wall width is required to increase the strength of the partition pattern in order to prevent the collapse defect of the partition pattern.
- the width of the barrier rib pattern is widened, the space between the barrier ribs is relatively narrow, the volume that can be filled with the phosphor is reduced, and the filling amount is not uniform.
- the scintillator panel obtained by this method has the drawbacks that the amount of X-ray phosphor is small, so that light emission becomes weak and light emission unevenness occurs. This is an obstacle to clear imaging in low-dose imaging.
- Japanese Patent Laid-Open No. 5-60871 Japanese Patent Laid-Open No. 5-188148 JP 2011-188148 A JP 2011-007552 A
- An object of the present invention is to provide a scintillator panel that eliminates the above-mentioned drawbacks, forms a narrow partition wall in a large area with high accuracy, has high luminous efficiency, and realizes clear image quality.
- a scintillator panel having a flat substrate, a grid-like partition provided on the substrate, and a scintillator layer made of a phosphor filled in a cell partitioned by the partition,
- a method of manufacturing a partition member having a flat substrate and a grid-shaped partition provided on the substrate Applying a photosensitive paste containing a low melting point glass powder containing 2 to 20% by mass of an alkali metal oxide and a photosensitive organic component on a substrate to form a photosensitive paste coating film;
- a step of exposing the obtained photosensitive paste coating film through a photomask having a predetermined opening A development process for dissolving and removing a portion soluble in the developer of the photosensitive paste coating film after exposure, A baking process in which the photosensitive paste coating film pattern after development is heated to 500 ° C. to 700 ° C. to remove organic components and soften and sinter low-melting glass to form partition walls;
- the manufacturing method of the partition member containing this.
- a method of manufacturing a scintillator panel having a flat substrate, a grid-like partition provided on the substrate, and a scintillator layer made of a phosphor filled in a cell defined by the partition There, Applying a photosensitive paste containing a low melting point glass powder containing 2 to 20% by mass of an alkali metal oxide and a photosensitive organic component on a substrate to form a photosensitive paste coating film; A step of exposing the obtained photosensitive paste coating film through a photomask having a predetermined opening; A development process for dissolving and removing a portion soluble in the developer of the photosensitive paste coating film after exposure, A baking process for forming the partition wall by heating the developed photosensitive paste coating film pattern to 500 ° C.
- a method of manufacturing a scintillator panel including: (4) From a flat substrate, a buffer layer provided on the substrate, a grid-like partition provided on the buffer layer, and a phosphor filled in a cell partitioned by the partition
- a scintillator panel having a scintillator layer comprising: Applying a buffer layer paste containing an inorganic powder selected from a low-melting glass powder and a ceramic powder and a photosensitive organic component on the substrate to form a buffer layer paste coating film; Exposing the entire surface of the buffer layer paste coating film, A barrier rib photosensitive paste containing a low melting glass powder containing 2 to 20% by mass of an alkali metal oxide and a photosensitive organic component is coated on the buffer layer paste coating film after the exposure.
- the buffer layer paste coating film and the developed photosensitive paste coating film pattern are heated to 500 ° C. to 700 ° C. to remove organic components and soften and sinter low-melting glass to simultaneously form the buffer layer and partition walls.
- a method of manufacturing a scintillator panel including:
- the partition wall can be formed with high accuracy with a large area, it is possible to provide a scintillator panel and a method for manufacturing the scintillator panel for realizing a large size and clear photographing.
- FIG. 1 is a cross-sectional view schematically showing a configuration of a radiation detection apparatus including a scintillator panel of the present invention.
- FIG. 2 is a perspective view schematically showing the configuration of the scintillator panel of the present invention.
- the radiation detection apparatus 1 includes a scintillator panel 2, an output substrate 3, and a power supply unit 12.
- the scintillator panel 2 includes a scintillator layer 7 made of a phosphor, absorbs the energy of incident radiation such as X-rays, and emits electromagnetic waves having a wavelength in the range of 300 nm to 800 nm, that is, from ultraviolet light centering on visible light. Emits electromagnetic waves (light) in the range of infrared light.
- the scintillator panel 2 is composed of a substrate 4, a grid-like partition wall 6 for partitioning cells formed thereon, and a scintillator layer 7 made of phosphor filled in a space formed by the partition wall. Is done. Further, by further forming the buffer layer 5 between the substrate 1 and the partition wall 6, the partition wall 6 can be stably formed. Further, by increasing the reflectance of the buffer layer 5 with respect to visible light, the light emitted from the scintillator layer 7 can efficiently reach the photoelectric conversion layer 9 on the output substrate 3.
- the output substrate 3 has a photoelectric conversion layer 9 and an output layer 10 in which pixels including photosensors and TFTs are two-dimensionally formed on a substrate 11.
- the radiation detection apparatus 1 is formed by adhering or bringing the light output surface of the scintillator panel 2 and the photoelectric conversion layer 9 of the output substrate 3 into contact with each other via a diaphragm layer 8 made of polyimide resin or the like.
- the light emitted from the scintillator layer 7 reaches the photoelectric conversion layer 9, performs photoelectric conversion at the photoelectric conversion layer 9, and outputs the result.
- each cell is partitioned by a partition wall.
- the substrate used in the scintillator panel of the present invention various types of glass, polymer materials, metals, and the like can be used as long as the materials have radiation transparency.
- plate glass made of glass such as quartz, borosilicate glass, chemically tempered glass
- ceramic substrate made of ceramic such as sapphire, silicon nitride, silicon carbide
- semiconductor such as silicon, germanium, gallium arsenide, gallium phosphorus, gallium nitrogen
- Semiconductor substrate comprising: cellulose acetate film, polyester film, polyethylene terephthalate film, polyamide film, polyimide film, triacetate film, polycarbonate film, carbon fiber reinforced resin sheet and other polymer films (plastic film); aluminum sheet, iron sheet, copper
- a metal sheet such as a sheet; a metal sheet having a metal oxide coating layer, an amorphous carbon substrate, or the like can be used.
- the thickness of the plate glass is preferably 2.0 mm or less, and more preferably 1.0 mm or less.
- the partition walls are made of a material mainly composed of low melting point glass containing 2 to 20% by mass of an alkali metal oxide.
- a material mainly composed of a low melting point glass containing 2 to 20% by mass of an alkali metal oxide has an appropriate refractive index and softening temperature, and is suitable for forming a narrow partition wall in a large area with high accuracy.
- the low melting point glass is a glass having a softening temperature of 700 ° C. or lower.
- the phrase “low melting point glass as a main component” means that 50% by mass to 100% by mass of the material constituting the partition walls is low melting point glass powder.
- a photosensitive paste containing a low melting point glass powder containing 2 to 20% by mass of an alkali metal oxide and a photosensitive organic component is applied on a substrate, and a photosensitive paste coating film is applied.
- An exposure step of exposing the obtained photosensitive paste coating film through a photomask having a predetermined opening, and dissolving and removing a portion soluble in the developer of the photosensitive paste coating film after exposure includes a baking process in which the developed photosensitive paste coating film pattern is heated to a high temperature to remove organic components and soften and sinter low-melting glass to form partition walls.
- a necessary portion of the photosensitive paste coating film is photocured by exposure, or an unnecessary portion of the photosensitive paste coating film is photodecomposed, so that the dissolution contrast of the photosensitive paste coating film with respect to the developer is increased.
- the development step unnecessary portions of the photosensitive paste coating film after exposure are removed with a developer, and a photosensitive paste coating film pattern in which only necessary portions remain is obtained.
- the obtained photosensitive paste coating film pattern is fired at a temperature of preferably 500 to 700 ° C., more preferably 500 to 650 ° C., whereby organic components are decomposed and distilled, and a low melting point is obtained.
- the glass powder is softened and sintered to form partition walls containing low melting glass.
- the firing temperature is preferably 500 ° C. or higher. Further, when the firing temperature exceeds 700 ° C., when a general glass substrate is used as the substrate, the deformation of the substrate becomes large, and therefore the firing temperature is desirably 700 ° C. or less.
- the method of the present invention can be processed with higher accuracy than a processing method in which a glass paste is laminated and printed by multilayer screen printing and then fired.
- the photosensitive paste used in the present invention is composed of an inorganic powder containing an organic component containing a photosensitive organic component and a low melting glass powder containing 2 to 20% by mass of an alkali metal oxide.
- the organic component needs a certain amount to form the photosensitive paste coating film pattern before firing, but if there is too much organic component, the amount of the substance to be removed in the firing process increases and the firing shrinkage ratio is large. Therefore, pattern defects are likely to occur in the firing process.
- the organic component is too small, the mixing and dispersibility of the inorganic fine particles in the paste will be reduced, so that not only will defects easily occur during firing, but the applicability of the paste will decrease due to an increase in paste viscosity.
- the content of the inorganic powder in the photosensitive paste is preferably 30% by mass to 80% by mass, and more preferably 40% by mass to 70% by mass.
- the low melting point glass powder is preferably 50% by mass to 100% by mass with respect to the whole inorganic powder. When the low melting point glass powder is less than 50% by mass of the inorganic powder, sintering does not proceed well in the firing step, and the strength of the obtained partition wall is lowered, which is not preferable.
- a glass composed of a low-melting glass having a softening temperature of 480 ° C. or higher is used as the low-melting glass powder to be used. It is preferable to use a powder.
- the softening temperature is less than 480 ° C.
- the low-melting glass is softened before the organic component is sufficiently removed during firing, and the organic component residue is taken into the glass. In this case, there is a concern that the organic components are gradually released later and the product quality is deteriorated.
- organic component residues incorporated in the glass cause the coloring of the glass.
- the organic components can be completely removed.
- the firing temperature in the firing step is preferably 500 to 700 ° C., more preferably 500 to 650 ° C.
- the softening temperature of the low-melting glass is preferably 480 to 700 ° C., more preferably 480 to 640 ° C. More preferably, the temperature is 480 to 620 ° C.
- the softening temperature is determined by calculating the endothermic temperature at the endothermic peak from the DTA curve obtained by measuring the sample using a differential thermal analyzer (DTA, “Differential Differential Thermal Balance TG8120” manufactured by Rigaku Corporation). Obtained by extrapolation. Specifically, using a differential thermal analyzer, the temperature is increased from room temperature to 20 ° C./min using alumina powder as a standard sample, and the inorganic powder as a measurement sample is measured to obtain a DTA curve. The softening point Ts obtained by extrapolating the endothermic end temperature at the endothermic peak from the obtained DTA curve by the tangent method is defined as the softening temperature.
- DTA differential Thermal analyzer
- the thermal expansion coefficient of the low-melting glass is preferably 40 to 90 ⁇ 10 ⁇ 7 (/ K), more preferably 40 to 65 ⁇ 10 ⁇ 7 .
- the thermal expansion coefficient is larger than 90 ⁇ 10 ⁇ 7 , the panel is greatly warped, so that it can be assembled as a radiation detection device. It becomes difficult.
- crosstalk of emitted light occurs in the panel surface, and variations in detection sensitivity of emitted light amount occur, making it difficult to detect high-definition images.
- the thermal expansion coefficient is smaller than 40 ⁇ 10 ⁇ 7 , the softening temperature of the low-melting glass cannot be lowered sufficiently.
- a metal oxide selected from lead oxide, bismuth oxide, zinc oxide and alkali metal oxide which is an effective material for lowering the glass melting point, can be used.
- alkali metal refers to lithium, sodium, potassium, rubidium, and cesium, but the alkali metal oxide used in the present invention refers to a metal oxide selected from lithium oxide, sodium oxide, and potassium oxide. .
- the content X (M 2 O) of the alkali metal oxide in the low-melting glass needs to be in the range of 2 to 20% by mass. If the content of the alkali metal oxide is less than 2% by mass, the softening temperature becomes high, and thus the firing step needs to be performed at a high temperature. For this reason, when a glass substrate is used as the substrate, the substrate is deformed in the baking process, and thus the resulting scintillator panel is likely to be distorted or defects in the partition walls are easily generated. Moreover, when there is more content of an alkali metal oxide than 20 mass%, the viscosity of glass will fall too much in a baking process. Therefore, the shape of the obtained partition wall is likely to be distorted. Moreover, when the porosity of the obtained partition wall becomes too small, the light emission luminance of the obtained scintillator panel is lowered.
- the alkali metal oxide it is desirable to add 3 to 10% by mass of zinc oxide in order to adjust the viscosity of the glass at a high temperature.
- the content of zinc oxide is 3% by mass or less, the viscosity of the glass at a high temperature is high, and when 10% by mass or more is added, the cost of the glass tends to be high.
- the low melting glass contains silicon oxide, boron oxide, aluminum oxide, alkaline earth metal oxides, etc. to stabilize the low melting glass. Properties, crystallinity, transparency, refractive index, thermal expansion characteristics, and the like can be controlled.
- the composition of the low-melting glass is preferably set to the composition range shown below because a low-melting glass having viscosity characteristics suitable for the present invention can be produced.
- Alkali metal oxide 2 to 20% by mass Zinc oxide: 3-10% by mass Silicon oxide: 20-40% by mass Boron oxide: 25-40% by mass Aluminum oxide: 10-30% by mass Alkaline earth metal oxide: 5 to 15% by mass
- the alkaline earth metal refers to one or more metals selected from magnesium, calcium, barium and strontium.
- the particle size of the inorganic particles containing the low-melting glass powder was evaluated using a particle size distribution measuring device (“MT3300” manufactured by Nikkiso Co., Ltd.). As a measurement method, the inorganic powder was put into a sample chamber filled with water, and the measurement was performed after ultrasonic treatment for 300 seconds.
- MT3300 particle size distribution measuring device
- the particle size of the low-melting glass powder is preferably 50% volume average particle size (D50) in the range of 1.0 to 4.0 ⁇ m.
- D50 volume average particle size
- the particle size of the low-melting glass powder is preferably 50% volume average particle size (D50) in the range of 1.0 to 4.0 ⁇ m.
- D50 volume average particle size
- the aggregation of particles becomes strong, it becomes difficult to obtain uniform dispersibility, and the fluidity of the paste becomes unstable. In such a case, the thickness uniformity when the paste is applied decreases.
- D50 exceeds 4.0 ⁇ m, the surface unevenness of the obtained sintered body becomes large, and the pattern tends to be crushed in a subsequent process.
- the photosensitive paste used in the present invention may contain, as a filler, high melting point glass that does not soften at 700 ° C. or ceramic particles such as silicon oxide, aluminum oxide, titanium oxide, and zirconium oxide, in addition to the above-described low melting point glass powder.
- high melting point glass that does not soften at 700 ° C.
- ceramic particles such as silicon oxide, aluminum oxide, titanium oxide, and zirconium oxide
- the filler preferably has an average particle size of 0.5 to 4.0 ⁇ m for the same reason as the low melting point glass powder.
- the average refractive index n1 of the low-melting glass powder and the average refractive index n2 of the photosensitive organic component preferably satisfy ⁇ 0.1 ⁇ n1-n2 ⁇ 0.1, It is more preferable that ⁇ 0.01 ⁇ n1 ⁇ n2 ⁇ 0.01 is satisfied, and it is further more preferable that ⁇ 0.005 ⁇ n1 ⁇ n2 ⁇ 0.005 is satisfied.
- ⁇ 0.01 ⁇ n1 ⁇ n2 ⁇ 0.01 is satisfied
- ⁇ 0.005 ⁇ n1 ⁇ n2 ⁇ 0.005 is satisfied.
- the refractive index of the low melting point glass powder can be measured by the Becke line detection method.
- the refractive index at a wavelength of 436 nm (g line) at 25 ° C. was defined as the refractive index of the low-melting glass powder in the present invention.
- the average refractive index of the photosensitive organic component can be determined by measuring the coating film composed of the photosensitive organic component by ellipsometry.
- the refractive index at a wavelength of 436 nm (g line) at 25 ° C. was defined as the average refractive index of the photosensitive organic component.
- the photosensitive paste used in the present invention contains a photosensitive organic component as an organic component, and can be patterned by the photosensitive paste method as described above.
- the reactivity can be controlled by using a photosensitive monomer, photosensitive oligomer, photosensitive polymer, photopolymerization initiator, or the like as the photosensitive organic component.
- the photosensitivity in the photosensitive monomer, photosensitive oligomer and photosensitive polymer means that when the paste is irradiated with actinic rays, the photosensitive monomer, photosensitive oligomer or photosensitive polymer is photocrosslinked or photopolymerized. It means that the chemical structure changes due to the reaction.
- the photosensitive monomer is a compound having an active carbon-carbon double bond, and examples thereof include monofunctional compounds and polyfunctional compounds having a vinyl group, acryloyl group, methacryloyl group, and acrylamide group as functional groups.
- a compound selected from a polyfunctional acrylate compound and a polyfunctional methacrylate compound in an organic component in an amount of 10 to 80% by mass increases the crosslink density during curing by photoreaction and improves pattern formation. This is preferable. Since various types of compounds have been developed as the polyfunctional acrylate compound and the polyfunctional methacrylate compound, it is possible to appropriately select them from the viewpoint of reactivity, refractive index, and the like.
- Photosensitive oligomers and photosensitive polymers include, for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetic acid or their anhydrides and other carboxyl group-containing monomers and methacrylic acid esters, acrylic acid. It can be obtained by copolymerizing monomers such as ester, styrene, acrylonitrile, vinyl acetate, 2-hydroxyacrylate.
- an ethylenically unsaturated group having a glycidyl group or an isocyanate group with respect to a mercapto group, amino group, hydroxyl group or carboxyl group in the oligomer or polymer As a method for introducing an active carbon-carbon unsaturated double bond into an oligomer or polymer, an ethylenically unsaturated group having a glycidyl group or an isocyanate group with respect to a mercapto group, amino group, hydroxyl group or carboxyl group in the oligomer or polymer.
- a method in which a saturated compound, a carboxylic acid such as acrylic acid chloride, methacrylic acid chloride or allyl chloride, or maleic acid is reacted can be used.
- the photopolymerization initiator is a compound that generates radicals when irradiated with an active light source.
- Specific examples include benzophenone, methyl o-benzoylbenzoate, 4,4-bis (dimethylamino) benzophenone, 4,4-bis (diethylamino) benzophenone, 4,4-dichlorobenzophenone, 4-benzoyl-4-methyl.
- the photosensitive paste can contain a copolymer having a carboxyl group as a binder.
- a copolymer having a carboxyl group for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetic acid or a carboxyl group-containing monomer such as acid anhydride thereof, and methacrylic acid ester, It can be obtained by selecting other monomers such as acrylate, styrene, acrylonitrile, vinyl acetate, 2-hydroxyacrylate and copolymerizing using an initiator such as azobisisobutyronitrile.
- a copolymer having acrylic acid ester or methacrylic acid ester and acrylic acid or methacrylic acid as a copolymerization component is preferably used since the thermal decomposition temperature at the time of firing is low.
- the photosensitive paste becomes a paste excellent in solubility in an alkaline aqueous solution by containing a copolymer having a carboxyl group.
- the acid value of the copolymer having a carboxyl group is preferably 50 to 150 mgKOH / g.
- an acid value shall be 50 mgKOH / g or more. Therefore, it is not necessary to increase the concentration of the developing solution, and it is possible to prevent peeling of the exposed portion and obtain a high-definition pattern.
- the copolymer having a carboxyl group has an ethylenically unsaturated group in the side chain.
- the ethylenically unsaturated group include an acryl group, a methacryl group, a vinyl group, and an allyl group.
- the photosensitive paste is prepared by adding an organic solvent and a binder to a photosensitive organic component comprising a low melting glass powder and a photosensitive monomer, photosensitive oligomer, photosensitive polymer, photopolymerization initiator, etc. Then, the mixture is uniformly mixed and dispersed with three rollers or a kneader.
- the viscosity of the photosensitive paste can be appropriately adjusted depending on the addition ratio of inorganic powder, thickener, organic solvent, polymerization inhibitor, plasticizer, anti-settling agent, etc., but the range is in the range of 2 to 200 Pa ⁇ s.
- the inside is preferable.
- a viscosity of 2 to 5 Pa ⁇ s is preferable.
- a viscosity of 50 to 200 Pa ⁇ s is preferable.
- a viscosity of 10 to 50 Pa ⁇ s is preferable.
- a partition wall can be formed by applying the photosensitive paste thus obtained onto a substrate, forming a desired pattern by a photolithography method, and further baking.
- the barrier rib is manufactured using the photosensitive paste by a photolithography method
- the present invention is not limited to this.
- a photosensitive paste coating film is formed by coating a photosensitive paste on the entire surface or partially on the substrate.
- a coating method methods such as a screen printing method, a bar coater, a roll coater, a die coater, and a blade coater can be used.
- the coating thickness can be adjusted by selecting the number of coatings, screen mesh and paste viscosity.
- an exposure process is performed.
- a method of exposing through a photomask is common, as is done in normal photolithography.
- a method of directly drawing with a laser beam or the like without using a photomask may be used.
- a proximity exposure machine or the like can be used as the exposure apparatus.
- when performing exposure of a large area after apply
- examples of the actinic rays used include near infrared rays, visible rays, and ultraviolet rays.
- ultraviolet rays are most preferable, and as the light source, for example, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a halogen lamp, or a germicidal lamp can be used.
- a low-pressure mercury lamp for example, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a halogen lamp, or a germicidal lamp can be used.
- an ultrahigh pressure mercury lamp is suitable.
- exposure conditions vary depending on the coating thickness, exposure is usually performed for 0.01 to 30 minutes using an ultrahigh pressure mercury lamp with an output of 1 to 100 mW / cm 2 .
- development is performed using the difference in solubility in the developer between the exposed portion and the unexposed portion of the photosensitive paste coating film to obtain a photosensitive paste coating film pattern having a desired lattice shape.
- Development is performed by dipping, spraying, or brushing.
- a solvent that can dissolve the organic components in the paste can be used for the developer.
- the developer is preferably composed mainly of water.
- development can be performed with an alkaline aqueous solution.
- an inorganic alkaline aqueous solution such as sodium hydroxide, sodium carbonate, calcium hydroxide or the like can be used.
- an organic alkaline aqueous solution because an alkaline component can be easily removed during firing.
- the organic alkali include tetramethylammonium hydroxide, trimethylbenzylammonium hydroxide, monoethanolamine, and diethanolamine.
- the concentration of the alkaline aqueous solution is preferably 0.05 to 5% by mass, more preferably 0.1 to 1% by mass. If the alkali concentration is too low, the soluble portion is not removed, and if the alkali concentration is too high, the pattern portion may be peeled off and the insoluble portion may be corroded.
- the development temperature at the time of development is preferably 20 to 50 ° C. for process control.
- a firing process is performed in a firing furnace.
- the atmosphere and temperature of the firing process vary depending on the type of photosensitive paste and substrate, but firing is performed in air, nitrogen, hydrogen, or the like.
- the firing furnace a batch-type firing furnace or a belt-type continuous firing furnace can be used.
- the firing is preferably carried out by holding at a temperature of 500 to 700 ° C. for 10 to 60 minutes.
- the firing temperature is more preferably 500 to 650 ° C.
- the height (H) of the partition walls is preferably 100 to 1000 ⁇ m, more preferably 160 to 500 ⁇ m, and further preferably 250 to 500 ⁇ m.
- the height of the partition wall exceeds 1000 ⁇ m, pattern formation during processing becomes difficult.
- the height of the partition walls is lowered, the amount of phosphor that can be filled is reduced, so that the light emission luminance of the obtained scintillator panel is lowered, and clear photographing becomes difficult.
- the pattern shape of the partition wall is not particularly limited, but a lattice shape or a stripe shape is preferable.
- the pitch (P) of the partition walls is preferably 60 ⁇ m to 1000 ⁇ m. If the pitch is less than 60 ⁇ m, pattern formation during processing becomes difficult. On the other hand, if the pitch is too large, it is difficult to perform high-accuracy image capturing using the obtained scintillator panel.
- the bottom width (Lb) of the partition walls is preferably 20 ⁇ m to 150 ⁇ m, and the top width (Lt) of the partition walls is preferably 15 ⁇ m to 80 ⁇ m. If the bottom width of the partition is less than 20 ⁇ m, defects in the partition are likely to occur during firing. On the other hand, when the bottom width of the partition wall is increased, the amount of phosphor that can be filled in the space partitioned by the partition wall is reduced. When the top width of the partition is less than 15 ⁇ m, the strength of the partition is lowered. On the other hand, when the top width of the partition wall exceeds 80 ⁇ m, the region from which the emitted light of the scintillator layer can be extracted becomes narrow.
- the aspect ratio (H / Lb) of the partition wall height (H) to the partition wall bottom width (Lb) is preferably 1.0 to 25.0.
- the aspect ratio (H / P) of the partition wall height (H) to the partition wall pitch (P) is preferably 0.1 to 3.5.
- a partition wall having a higher aspect ratio (H / P) with respect to the partition wall pitch is one pixel divided with higher definition, and more phosphor can be filled in a space per pixel.
- shapes such as a square, a rectangle, a parallelogram, and a trapezoid can be selected as appropriate.
- a grid-like partition wall having a square cell shape is preferable. It is not limited.
- the height and width of the partition walls were measured by exposing a section of the partition walls perpendicular to the substrate and observing the section with a scanning electron microscope (S2400, manufactured by Hitachi, Ltd.).
- the width of the partition wall at the contact portion between the partition wall and the substrate was measured as the bottom width (Lb).
- the width of the partition wall at the contact portion between the partition wall and the buffer layer was measured as the bottom width (Lb).
- variety of the partition topmost part was measured as top part width (Lt).
- the partition walls are formed by sintering inorganic powder contained in the photosensitive paste.
- the inorganic powders forming the partition walls are fused, but voids remain between them.
- the ratio of the voids included in the partition walls can be adjusted by the temperature design of the firing process for firing the partition walls. It is preferable to set the ratio (void ratio) of the void portion in the entire partition wall to 2 to 25%, because a partition wall having both visible light reflection characteristics and strength can be formed.
- the porosity is less than 2%, the light emission luminance of the obtained scintillator panel is lowered due to the low reflectance of the partition walls.
- the porosity exceeds 25%, the strength of the partition wall is insufficient, and it tends to collapse.
- the porosity is more preferably 5 to 25%, further preferably 5 to 20%.
- the porosity is measured by precisely polishing the cross section of the partition wall, then observing with an electron microscope, converting the inorganic material part and the void part into two gradations, and determining the ratio of the area of the void part closed to the area of the partition wall cross section. calculate.
- the buffer layer is also preferable to provide a buffer layer made of an inorganic component selected from low melting glass and ceramics between the partition wall and the substrate.
- the buffer layer has an effect of relaxing the stress applied to the partition walls in the firing step and realizing stable partition formation.
- the buffer layer has a high reflectance because the light emission luminance of the scintillator panel can be increased by reflecting visible light emitted by the phosphor in the direction of the photoelectric conversion element.
- the buffer layer is preferably made of low-melting glass and ceramics.
- the low melting point glass the same glass as the partition wall can be used.
- the ceramic titanium oxide, aluminum oxide, zirconium oxide and the like are preferable.
- a paste in which an organic component and an inorganic powder such as a low-melting glass powder and a ceramic powder are dispersed in a solvent is applied to a substrate and dried to form a buffer layer paste coating film.
- the buffer layer paste coating film is baked at a temperature of preferably 500 to 700 ° C., more preferably 500 to 650 ° C., whereby the buffer layer can be formed.
- the buffer layer paste coating film is formed using the same photosensitive organic component as the barrier rib photosensitive paste as the organic component of the buffer layer paste, and then the buffer layer paste coating film is formed. It is preferable to expose the entire surface of the paste coating film for curing and cure the coating film.
- a buffer layer paste is applied using a thermosetting organic component containing any polymerizable compound selected from a polymerizable monomer, a polymerizable oligomer and a polymerizable polymer as an organic component of the buffer layer paste, and a thermal polymerization initiator. It is also preferable to heat cure after forming the film. Since these methods make the buffer layer paste coating film insoluble in the solvent, the buffer layer paste coating film is prevented from dissolving or peeling off in the step of applying the barrier rib photosensitive paste thereon. be able to.
- thermosetting buffer layer paste a binder such as ethyl cellulose, a dispersant, a thickener, a plasticizer, an anti-settling agent, and the like can be appropriately added to the thermosetting buffer layer paste.
- the reflectance of the buffer layer with respect to a wavelength of 550 nm is preferably 60% or more.
- the scintillator panel can be completed by filling the cells partitioned by the barrier ribs with phosphors.
- the cell refers to a space partitioned by a grid-like partition wall.
- the phosphor filled in the cell is called a scintillator layer.
- CsI is preferable because it has a relatively high conversion rate from X-rays to visible light and high reflectivity due to phosphor crystals.
- activators for example, a mixture of CsI and sodium iodide (NaI) at an arbitrary molar ratio, indium (In), thallium (Tl), lithium (Li), potassium (K), rubidium (Rb), sodium (Na) CsI containing an activator such as is preferable.
- thallium compounds such as thallium bromide (TlBr), thallium chloride (TlCl), or thallium fluoride (TlF, TlF 3 ) can be used as an activator.
- the scintillator layer is formed by, for example, a method of depositing crystalline CsI (in this case, a thallium compound such as thallium bromide can be co-deposited) by vacuum deposition, or phosphor slurry dispersed in water on a substrate.
- crystalline CsI in this case, a thallium compound such as thallium bromide can be co-deposited
- phosphor slurry dispersed in water on a substrate for example, a method of depositing crystalline CsI (in this case, a thallium compound such as thallium bromide can be co-deposited) by vacuum deposition, or phosphor slurry dispersed in water on a substrate.
- Application method phosphor powder, phosphor binder prepared by mixing organic binders such as ethyl cellulose and acrylic resin, and organic solvents such as terpineol and ⁇ -butyrolactone, etc. it can.
- the amount of phosphor filled in the cell partitioned by the partition wall is such that the volume fraction occupied by the phosphor (hereinafter referred to as phosphor volume filling factor) is 55% to 100% with respect to the space volume in the cell. It is preferably 60% to 100%, more preferably 70% to 100%. If the phosphor volume fraction is less than 55%, incident X-rays cannot be efficiently converted into visible light. In order to increase the conversion efficiency of incident X-rays, it is preferable to fill the space of the cell with a high density of phosphors.
- Photosensitive monomer M-1 Trimethylolpropane triacrylate
- photosensitive monomer M-2 Tetrapropylene glycol dimethacrylate
- photosensitive monomer M-3 In the following formula (A), R 1 and R 2 are hydrogen, and R 3 is ethylene Oxide-propylene oxide co-oligomer, R 4 is isophorone diisocyanate residue, molecular weight is 19,000 R 1- (R 4 -R 3 ) n -R 4 -R 2
- Polymerization inhibitor 1,6-hexanediol-bis [(3,5-di-tert-butyl-4-hydroxyphenyl) propionate])
- Ultraviolet absorber solution Sudan IV (manufactured by Tokyo Ohka Kogyo Co., Ltd.) ⁇ -butyrolactone 0.3 mass% solution
- Binder polymer Ethyl cellulose (manufactured by Hercules)
- Viscosity modifier Flownon EC121 (manufactured by Kyoeisha Chemical Co., Ltd.)
- Solvent A ⁇ -butyrolactone
- Solvent B Terpineol low melting glass powder A: SiO 2 27% by mass, B 2 O 3 31% by mass, ZnO 6% by mass, Li 2 O 7% by mass, MgO 2% by mass, CaO 2% by mass, BaO 2% by mass, Al 2 O 3 23% by mass, refraction.
- Low melting glass powder B SiO 2 28% by mass, B 2 O 3 30% by mass, ZnO 6% by mass, Li 2 O 2% by mass, MgO 3% by mass, CaO 3% by mass, BaO 3% by mass, Al 2 O 3 25% by mass, refraction.
- Low melting glass powder D SiO 2 27 mass%, B 2 O 3 33 mass%, ZnO 4 mass%, Li 2 O 4 mass%, K 2 O 2 mass%, MgO 2 mass%, CaO 3 mass%, BaO 2 mass%, Al 2 O 3 23 mass%, refractive index (ng): 1.553, softening temperature 613 ° C., thermal expansion coefficient 55 ⁇ 10 ⁇ 7 , average particle diameter 2.1 ⁇ m
- Photosensitive paste A for partition walls 4 parts by weight of photosensitive monomer M-1, 6 parts by weight of photosensitive monomer M-2, 24 parts by weight of photosensitive polymer, 6 parts by weight of photopolymerization initiator, 0.2 of polymerization inhibitor Part by mass and 12.8 parts by mass of the ultraviolet absorber solution were dissolved in 38 parts by mass of the solvent A by heating at a temperature of 80 ° C. After cooling the obtained solution, 9 mass parts of viscosity modifiers were added, and the organic solution 1 was produced.
- the refractive index (ng) of the organic coating film obtained by applying and drying the organic solution 1 on a glass substrate was 1.555.
- Paste A 30 parts by mass of the low-melting glass powder A and 10 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 1, and then kneaded with a three-roller kneader, so Paste A was prepared.
- Barrier photosensitive paste B An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 30 parts by mass of the low-melting glass powder B and 10 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 1, and then kneaded with a three-roller kneader, so Paste B was prepared.
- Photosensitive paste C for partition walls 5 parts by weight of photosensitive monomer M-1, 5 parts by weight of photosensitive monomer M-3, 24 parts by weight of photosensitive polymer, 6 parts by weight of photopolymerization initiator, 0.2 of polymerization inhibitor Part by mass and 12.8 parts by mass of the ultraviolet absorber solution were dissolved in 38 parts by mass of the solvent A by heating at a temperature of 80 ° C. After cooling the obtained solution, 9 mass parts of viscosity modifiers were added, and the organic solution 2 was produced.
- the refractive index (ng) of the organic coating film obtained by applying and drying the organic solution 2 on a glass substrate was 1.559.
- Paste C was prepared.
- Barrier photosensitive paste D An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 40 parts by mass of the low-melting glass powder A was added to 60 parts by mass of the produced organic solution 1, and then kneaded with a three-roller kneader to produce a photosensitive paste D for partition walls.
- Barrier photosensitive paste E An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 39 parts by mass of low-melting glass powder A and 1 part by mass of high-melting glass powder A were added to 60 parts by mass of the prepared organic solution 1, and then kneaded with a three-roller kneader to produce a photosensitive film for partition walls. Paste E was prepared.
- Barrier photosensitive paste F An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 25 parts by mass of the low-melting glass powder A and 15 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the produced organic solution 1, and then kneaded with a three-roller kneader to produce a photosensitive film for the partition wall. Paste F was prepared.
- Barrier photosensitive paste G An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 20 parts by mass of the low-melting glass powder A and 20 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 1, and then kneaded with a three-roller kneader, so Paste G was prepared.
- Barrier photosensitive paste H An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 30 parts by mass of the low-melting glass powder D and 10 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 1, and then kneaded with a three-roller kneader to produce a photosensitive film for the partition wall. Paste H was prepared.
- Photosensitive paste I for barrier ribs 8 parts by weight of photosensitive monomer M-1, 4 parts by weight of photosensitive monomer M-3, 24 parts by weight of photosensitive polymer, 4 parts by weight of photopolymerization initiator, 0.2 of polymerization inhibitor Part by mass and 12.8 parts by mass of the ultraviolet absorber solution were dissolved in 38 parts by mass of the solvent A by heating at a temperature of 80 ° C. After cooling the obtained solution, 9 mass parts of viscosity modifiers were added, and the organic solution 3 was produced. The refractive index (ng) of the organic coating film obtained by applying the organic solution 3 to a glass substrate and drying was 1.553.
- Paste I 30 parts by mass of the low-melting glass powder A and 10 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 3, and then kneaded with a three-roller kneader, so Paste I was prepared.
- Barrier photosensitive paste J An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 40 parts by mass of the low-melting glass powder E was added to 60 parts by mass of the produced organic solution 1, and then kneaded with a three-roller kneader to prepare a photosensitive paste J for partition walls.
- Barrier photosensitive paste K An organic solution 3 was prepared in the same manner as the barrier rib photosensitive paste I. Next, 35 parts by mass of the low-melting glass powder F and 5 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 3, and then kneaded with a three-roller kneader, so Paste K was prepared.
- Barrier photosensitive paste L An organic solution 3 was prepared in the same manner as the barrier rib photosensitive paste I. Next, 35 parts by mass of the low-melting glass powder D and 5 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 3, and then kneaded with a three-roller kneader, so Paste L was produced.
- Barrier photosensitive paste M An organic solution 1 was prepared in the same manner as the barrier rib photosensitive paste A. Next, 40 parts by mass of glass powder G was added to 60 parts by mass of the produced organic solution 1, and then kneaded with a three-roller kneader to produce a photosensitive paste M for partition walls.
- Barrier photosensitive paste N An organic solution 2 was prepared in the same manner as the barrier rib photosensitive paste C. Next, 30 parts by mass of the low-melting glass powder H and 10 parts by mass of the high-melting glass powder A are added to 60 parts by mass of the prepared organic solution 1, and then kneaded with a three-roller kneader to produce a photosensitive film for the partition wall. Paste N was prepared.
- Screen printing paste A was prepared by mixing 50 parts by mass of a terpineol solution containing 10% by mass of ethyl cellulose and 50 parts by mass of low-melting glass powder A.
- the refractive index (ng) of the organic coating film obtained by applying and drying a terpineol solution containing 10% by mass of ethyl cellulose on a glass substrate was 1.49.
- Screen printing paste B for partition walls 50 parts by mass of terpineol solution containing 10% by mass of ethyl cellulose, 40 parts by mass of low-melting glass powder A, and 10 parts by mass of high-melting glass powder A were prepared to produce paste B for screen printing. did.
- a photocurable buffer layer paste A was prepared by adding 3 parts by mass of the above titanium oxide powder to 97 parts by mass of the photosensitive paste A for partition walls and re-kneading.
- thermosetting buffer layer paste B was prepared by kneading.
- thermosetting buffer layer paste C was prepared by kneading.
- the phosphor volume filling factor was measured as follows. The difference between the weight of the barrier rib member on which the buffer layer and the barrier ribs were formed on the substrate and the weight of the scintillator panel after filling the phosphor was taken as the total weight of the phosphors filled. The total phosphor weight thus calculated was divided by the specific gravity of the phosphor to calculate the phosphor volume. Further, a calculated value obtained by dividing the volume of the phosphor by the volume of space in all the cells was used as the volume filling rate of the phosphor.
- the total cell volume is a value obtained by multiplying the space volume in one cell partitioned by the partition walls and the total number of cells included in the scintillator panel.
- the spatial volume in one cell can be calculated
- the space shape of the cell is a regular square frustum having the same vertical and horizontal partition wall pitch, partition wall bottom width (Lb), and partition wall top width
- the relationship between the partition bottom width (Lb), the partition top width (Lt), and the partition height (H) is expressed by the following formula 1.
- the amount of warpage of the panel is 50 ⁇ m or less, it is a smooth scintillator panel, and the variation in the detection sensitivity of the amount of emitted light when the entire panel surface emits light can be suppressed to less than 2%, resulting in a high-definition image. Can be detected. If the amount of warpage of the panel is greater than 50 ⁇ m and less than 100 ⁇ m, the variation in the detection sensitivity of the emitted light is slightly increased, but the variation in the detection sensitivity of the emitted light amount when the entire surface of the panel is emitted is suppressed to less than 5%. It is possible.
- the amount of warpage of the panel is larger than 100 ⁇ m, the variation in the detection sensitivity of the amount of emitted light when the entire panel surface emits light is 5% or more. In addition, since many crosstalks of emitted light occur, high-definition image detection becomes difficult.
- the produced scintillator panel was set in any of PaxScan2520, PaxScan4336, and PaxScan3030 (Varian FPD) to produce a radiation detection apparatus.
- X-rays having a tube voltage of 80 kVp were irradiated from the substrate side of the scintillator panel, and the amount of light emitted from the phosphor layer was detected by any of PaxScan 2520, PaxScan 4336, and PaxScan 3030.
- the evaluation of luminance was performed by relative evaluation with respect to the result of Example 1.
- the produced scintillator panel was set in one of PaxScan 2520, PaxScan 4336, and PaxScan 3030 to produce a radiation detection apparatus.
- X-rays with a tube voltage of 80 kVp were irradiated from the substrate side of the scintillator panel, and a solid image was taken. This was reproduced as an image by an image reproducing device, and the obtained print image was visually observed to evaluate the presence or absence of image defects, crosstalk and linear noise.
- Example 1 The partition wall photosensitive paste A is dried to 500 ⁇ m on a 500 mm ⁇ 500 mm glass substrate (OA-10, manufactured by Nippon Electric Glass Co., Ltd., thermal expansion coefficient 38 ⁇ 10 ⁇ 7 , substrate thickness 0.7 mm). Then, it was coated with a die coater and dried to form a photosensitive paste coating film for partition walls. Next, the photosensitive paste coating film for barrier ribs is applied to an ultrahigh pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 127 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m) in which openings corresponding to a desired barrier rib pattern are formed.
- a photomask a chromium mask having a grid-like opening having a pitch of 127 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m
- Exposure was performed at 600 mJ / cm 2 with a mercury lamp.
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the photosensitive paste coating film pattern is baked in the air at 585 ° C. for 15 minutes, and the partition pitch is 127 ⁇ m, the partition top width is 25 ⁇ m, the partition bottom width is 50 ⁇ m, the partition height is 340 ⁇ m, and the grid partition size is 480 mm ⁇ 480 mm. A partition wall member having was obtained. The porosity of the partition wall was 8.3%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 1 was 50 ⁇ m or more and 60 ⁇ m or less.
- Example 2 The buffer layer paste A was applied to a 500 mm ⁇ 500 mm glass substrate (OA-10, manufactured by Nippon Electric Glass Co., Ltd.) with a 15 ⁇ m bar coater, dried, and then exposed to 500 mJ / cm 2 on the entire surface with an ultrahigh pressure mercury lamp. Then, a buffer layer paste coating film having a thickness of 12 ⁇ m was formed.
- OA-10 manufactured by Nippon Electric Glass Co., Ltd.
- the barrier rib photosensitive paste A is applied by a die coater so as to have a dry thickness of 500 ⁇ m, and dried to form a barrier rib photosensitive paste coating film. Formed.
- the photosensitive paste coating film for barrier ribs is applied to the ultra high pressure mercury lamp through a photomask having openings corresponding to the desired barrier rib pattern (a chromium mask having a grid-like opening having a pitch of 127 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m). And exposed at 600 mJ / cm 2 .
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously baked in the air at 585 ° C. for 15 minutes.
- the partition pitch was 127 ⁇ m
- the partition top width was 25 ⁇ m
- the partition bottom width was 50 ⁇ m
- the partition height was 480 ⁇ m, and 480 mm.
- a partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 8.0%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 2 was 70 ⁇ m or more and 80 ⁇ m or less.
- Example 3 A partition wall member was prepared in the same manner as in Example 2 except that baking was performed at 645 ° C. for 15 minutes using the partition wall photosensitive paste B.
- the partition walls of the partition member thus obtained were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 22 ⁇ m, partition wall bottom width of 60 ⁇ m, partition wall height of 325 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 53%.
- the partition wall porosity was 9.5%.
- the amount of substrate warpage of the scintillator panel 3 was 30 ⁇ m or less.
- Example 4 A barrier rib member was prepared in the same manner as in Example 2 except that baking was performed at 540 ° C. for 15 minutes using the barrier rib photosensitive paste C.
- the partition walls of the obtained partition member were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 23 ⁇ m, partition wall bottom width of 55 ⁇ m, partition wall height of 320 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 70%.
- the partition wall porosity was 4.4%.
- CsI: Tl 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 4 was 130 ⁇ m or more and 150 ⁇ m or less.
- the luminance was 110% of Example 1 and the luminance variation was 6.5%.
- Example 5 A partition wall member was produced in the same manner as in Example 2 except that the partition wall photosensitive paste D was used.
- the partition walls of the obtained partition member were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 24 ⁇ m, partition wall bottom width of 53 ⁇ m, partition wall height of 320 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 0.8%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 5 was 130 ⁇ m or more and 150 ⁇ m or less.
- the luminance was 105% of Example 1 and the luminance variation was 6.0%.
- Example 6 A partition wall member was produced in the same manner as in Example 2 except that the partition wall photosensitive paste E was used.
- the partition walls of the obtained partition member were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 24 ⁇ m, partition wall bottom width of 53 ⁇ m, partition wall height of 320 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 2.0%.
- the amount of substrate warpage of the scintillator panel 6 was 90 ⁇ m or more and 100 ⁇ m or less.
- a good image with 4.7% luminance variation was obtained without defects including linear noise, and the luminance was 120% of Example 1. It was.
- Example 7 A partition wall member was produced in the same manner as in Example 2 except that the partition wall photosensitive paste F was used.
- the partition walls of the obtained partition member were lattice partition walls having a partition pitch of 127 ⁇ m, partition top width 34 ⁇ m, partition bottom width 60 ⁇ m, partition height 370 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the porosity of the partition walls was 24.8%.
- the amount of substrate warpage of the scintillator panel 7 was 50 ⁇ m or more and 60 ⁇ m or less.
- As a result of evaluating the radiation detection apparatus comprising the manufactured scintillator panel 7 and PaxScan 2520 there was no defect including linear noise, a good image with a luminance variation of 2.2% was obtained, and the luminance was 140% of Example 1. It was.
- Example 8 A partition wall member was produced in the same manner as in Example 2 except that the partition wall photosensitive paste G was used.
- the partition walls of the obtained partition member were lattice-shaped partition walls having a partition pitch of 127 ⁇ m, partition top width of 35 ⁇ m, partition wall bottom width of 60 ⁇ m, partition wall height of 380 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 32.3%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 8 was 50 ⁇ m or more and 60 ⁇ m or less.
- the luminance was 140% of Example 1 and the luminance variation was 2.1%. However, 15 image defects occurred in the plane.
- Example 9 A barrier rib member was prepared in the same manner as in Example 2 except that baking was performed at 620 ° C. for 15 minutes using the barrier rib photosensitive paste H.
- the partition walls of the obtained partition member were lattice-shaped partitions having a partition pitch of 127 ⁇ m, a partition top width of 25 ⁇ m, a partition bottom width of 40 ⁇ m, and a partition wall height of 340 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 60%.
- the partition wall porosity was 9.4%.
- CsI: Tl 1 mol: 0.003 mol
- CsI: TlI 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 9 was 30 ⁇ m or more and 40 ⁇ m or less.
- Example 10 The buffer layer paste B is applied to a 500 mm ⁇ 500 mm glass substrate (OA-10 manufactured by Nippon Electric Glass Co., Ltd.) with a 15 ⁇ m bar coater, dried and heat-cured at 150 ° C. for 30 minutes, and a buffer layer having a thickness of 12 ⁇ m.
- a partition wall member was produced in the same manner as in Example 2 except that the paste coating film was formed.
- the partition walls of the partition member thus obtained were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 25 ⁇ m, partition wall bottom width of 48 ⁇ m, partition wall height of 340 ⁇ m, and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 66%.
- the partition wall porosity was 8.1%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 10 was 70 ⁇ m or more and 80 ⁇ m or less.
- Example 11 The above buffer layer paste B was applied to a 500 mm ⁇ 500 mm glass substrate (OA-10 manufactured by Nippon Electric Glass Co., Ltd.) with a 15 ⁇ m bar coater, dried and heat-cured at 150 ° C. for 30 minutes, and a buffer layer having a thickness of 12 ⁇ m. A paste coating film was formed. The buffer layer paste coating film formed on the substrate was baked in air at 585 ° C. for 15 minutes to form a buffer layer. Thereafter, the barrier rib photosensitive paste was formed in the same manner as in Example 2 to form a lattice-shaped photosensitive paste coating film pattern. Furthermore, the photosensitive paste coating film pattern was baked in the air at 585 ° C. for 15 minutes.
- the partition walls of the obtained partition member were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 25 ⁇ m, partition wall bottom width of 51 ⁇ m, partition wall height of 340 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 60%.
- the partition wall porosity was 8.1%.
- the substrate warpage amount of the scintillator panel 11 was 90 ⁇ m or more and 100 ⁇ m or less.
- a good image with a brightness variation of 4.4% was obtained without defects including linear noise, and the brightness was 132% of Example 1. It was.
- Example 12 A partition wall member was produced in the same manner as in Example 10 except that the partition wall photosensitive paste I was used.
- the partition walls of the obtained partition member were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 25 ⁇ m, partition wall bottom width of 60 ⁇ m, partition wall height of 340 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 8.2%.
- CsI: Tl 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 12 was 70 ⁇ m or more and 80 ⁇ m or less.
- a good image with a brightness variation of 3.5% was obtained without defects including linear noise, and the brightness was 135% of Example 1. It was.
- Example 13 A partition wall member was prepared in the same manner as in Example 1 except that the partition wall photosensitive paste J was used and the firing temperature was 565 ° C. for 15 minutes. However, although the exposure amount at the time of exposure of the photosensitive paste coating film was adjusted, a part of the photosensitive paste pattern was buried and a partition wall having a uniform in-plane partition width was not obtained.
- the partition wall obtained by exposure with an ultra-high pressure mercury lamp at 500 mJ / cm 2 was measured at a portion where no filling occurred, partition wall pitch 127 ⁇ m, partition top width 25 ⁇ m, partition bottom It was a grid-like partition wall having a width of 75 ⁇ m and a partition wall height of 340 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance for light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 67%, but the low melting point glass of the buffer paste did not sinter and cracks occurred at the interface between the partition walls and the buffer layer.
- the partition wall porosity was 3.0%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 13 was 90 ⁇ m or more and 100 ⁇ m or less.
- the luminance was 110% of Example 1 and the luminance variation was 4.2%.
- Example 14 Similarly to Example 2, a buffer layer paste coating film was formed on a glass substrate.
- the barrier rib photosensitive paste A was applied with a die coater so as to have a dry thickness of 590 ⁇ m and dried to form a barrier rib photosensitive paste coating film.
- the photosensitive paste coating film for barrier ribs is applied to an ultrahigh pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 127 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m) in which openings corresponding to a desired barrier rib pattern are formed. Exposure was performed at 750 mJ / cm 2 with a mercury lamp.
- a photomask a chromium mask having a grid-like opening having a pitch of 127 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously fired in the air at 585 ° C. for 15 minutes, and the partition pitch was 127 ⁇ m, the partition top width was 27 ⁇ m, the partition bottom width was 65 ⁇ m, the partition height was 400 ⁇ m, and 480 mm. A partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained. The reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%. The partition wall porosity was 8.1%.
- the amount of substrate warpage of the scintillator panel 14 was 60 ⁇ m or more and 70 ⁇ m or less.
- there was no defect including linear noise a good image with a brightness variation of 3.2% was obtained, and the brightness was 119% of Example 1. It was.
- Example 15 Similarly to Example 2, a buffer layer paste coating film was formed on a glass substrate.
- the barrier rib photosensitive paste A was applied by a die coater so as to have a dry thickness of 740 ⁇ m and dried to form a barrier rib photosensitive paste coating film.
- the photosensitive paste coating film for barrier ribs is applied to an ultra-high pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 194 ⁇ m and a line width of 20 ⁇ m in both vertical and horizontal directions) in which openings corresponding to a desired barrier rib pattern are formed. Exposure was performed at 950 mJ / cm 2 with a mercury lamp.
- a photomask a chromium mask having a grid-like opening having a pitch of 194 ⁇ m and a line width of 20 ⁇ m in both vertical and horizontal directions
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously fired in the air at 585 ° C. for 15 minutes, and the partition pitch was 194 ⁇ m, the partition top width was 28 ⁇ m, the partition bottom width was 58 ⁇ m, and the partition height was 500 ⁇ m, and 480 mm. A partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained. The reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 64%. The partition wall porosity was 7.9%.
- the amount of substrate warpage of the scintillator panel 15 was 70 ⁇ m or more and 80 ⁇ m or less.
- Example 16 Similarly to Example 2, a buffer layer paste coating film was formed on a glass substrate. Next, the barrier rib photosensitive paste A was applied by a die coater so as to have a dry thickness of 210 ⁇ m and dried to form a barrier rib photosensitive paste coating film. Next, the photosensitive paste coating film for the partition is formed through a photomask (a chromium mask having a grid-shaped opening with a pitch of 63.5 ⁇ m and a line width of 14 ⁇ m in both length and width) in which openings corresponding to a desired partition pattern are formed. It exposed at 450 mJ / cm ⁇ 2 > with the ultrahigh pressure mercury lamp.
- a photomask a chromium mask having a grid-shaped opening with a pitch of 63.5 ⁇ m and a line width of 14 ⁇ m in both length and width
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Furthermore, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously baked in the air at 585 ° C. for 15 minutes, and the partition pitch was 63.5 ⁇ m, the partition top width was 16 ⁇ m, the partition bottom width was 22 ⁇ m, and the partition height was 160 ⁇ m. A partition member having a lattice partition having a size of 480 mm ⁇ 480 mm was obtained. The reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 64%. The partition wall porosity was 7.9%.
- the amount of substrate warpage of the scintillator panel 16 was 60 ⁇ m or more and 70 ⁇ m or less.
- a good image with a luminance variation of 3.0% was obtained without defects including linear noise, and the luminance was 92% of Example 1. It was.
- Example 17 Similarly to Example 2, a buffer layer paste coating film was formed on a glass substrate.
- the barrier rib photosensitive paste A was applied by a die coater so as to have a dry thickness of 680 ⁇ m and dried to form a barrier rib photosensitive paste coating film.
- the photosensitive paste coating film for barrier ribs is applied to an ultrahigh pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 139 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m) in which openings corresponding to a desired barrier rib pattern are formed. Exposure was performed at 820 mJ / cm 2 with a mercury lamp.
- a photomask a chromium mask having a grid-like opening having a pitch of 139 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously fired in the air at 585 ° C. for 15 minutes.
- the partition pitch was 139 ⁇ m
- the partition top width was 26 ⁇ m
- the partition bottom width was 51 ⁇ m
- the partition height was 450 ⁇ m
- 480 mm A partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 8.1%.
- CsI: Tl 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 17 was 60 ⁇ m or more and 70 ⁇ m or less.
- Example 18 Using the photosensitive paste K for partition walls and the buffer layer paste C, partition members were prepared in the same manner as in Example 10 except that firing was performed at 650 ° C. for 15 minutes.
- the partition walls of the partition member thus obtained were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 24 ⁇ m, partition wall bottom width of 70 ⁇ m, partition wall height of 370 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 66%.
- the porosity of the partition walls was 14.1%.
- CsI: Tl 1 mol: 0.003 mol
- CsI: TlI 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 18 was 30 ⁇ m or less.
- a good image with 1.3% luminance variation was obtained without defects including linear noise, and the luminance was 128% of Example 1. It was.
- Example 19 A buffer layer paste coating film was formed on a glass substrate in the same manner as in Example 10.
- the barrier rib photosensitive paste H was applied by a die coater so as to have a dry thickness of 290 ⁇ m and dried to form a barrier rib photosensitive paste coating film.
- the photosensitive paste coating film for barrier ribs is applied to an ultrahigh pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 127 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m) in which openings corresponding to a desired barrier rib pattern are formed. Exposure was performed at 550 mJ / cm 2 with a mercury lamp.
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously baked in the air at 620 ° C. for 15 minutes.
- the partition pitch was 127 ⁇ m
- the partition top width was 20 ⁇ m
- the partition bottom width was 30 ⁇ m
- the partition height was 200 ⁇ m
- and 480 mm A partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 61%.
- the partition wall porosity was 9.0%.
- CsI: Tl 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 19 was 30 ⁇ m or more and 40 ⁇ m or less.
- Example 20 A barrier rib member was prepared in the same manner as in Example 19 except that the photosensitive paste H for barrier ribs had a dry thickness of 360 ⁇ m and was exposed to 600 mJ / cm 2 with an ultrahigh pressure mercury lamp.
- the partition wall of the obtained partition wall member had a partition wall pitch of 127 ⁇ m, a partition wall top width of 22 ⁇ m, a partition wall bottom width of 35 ⁇ m, a partition wall height of 250 ⁇ m, and a partition wall member having a grid-shaped partition wall of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 61%. Further, the porosity of the partition walls was 9.2%.
- CsI: Tl 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 20 was 30 ⁇ m or more and 40 ⁇ m or less.
- Example 21 A buffer layer paste coating film was formed on a glass substrate in the same manner as in Example 15. Next, the barrier rib photosensitive paste A was applied by a die coater so as to have a dry thickness of 580 ⁇ m and dried to form a barrier rib photosensitive paste coating film. Next, the photosensitive paste coating film for barrier ribs is applied to an ultra-high pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 194 ⁇ m and a line width of 20 ⁇ m in both vertical and horizontal directions) in which openings corresponding to a desired barrier rib pattern are formed. It exposed at 1000 mJ / cm ⁇ 2 > with the mercury lamp.
- a photomask a chromium mask having a grid-like opening having a pitch of 194 ⁇ m and a line width of 20 ⁇ m in both vertical and horizontal directions
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously baked in the air at 585 ° C. for 15 minutes.
- the partition pitch was 194 ⁇ m
- the partition top width was 25 ⁇ m
- the partition bottom width was 50 ⁇ m
- the partition height was 400 ⁇ m
- 480 mm A partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 66%.
- the partition wall porosity was 8.5%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 21 was 50 ⁇ m or more and 60 ⁇ m or less.
- Example 22 A barrier rib member was prepared in the same manner as in Example 19 except that the photosensitive paste H for barrier ribs had a dry thickness of 500 ⁇ m and was exposed to 600 mJ / cm 2 with an ultrahigh pressure mercury lamp.
- the partition wall of the obtained partition wall member had a partition wall pitch of 127 ⁇ m, a partition wall top width of 24 ⁇ m, a partition wall bottom width of 45 ⁇ m, a partition wall height of 340 ⁇ m, and a partition wall member having a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 61%. Further, the porosity of the partition walls was 9.2%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 22 was 30 ⁇ m or more and 40 ⁇ m or less.
- Example 23 A partition wall member was produced in the same manner as in Example 22 using the photosensitive paste H for partition walls.
- the partition wall of the obtained partition wall member had a partition wall pitch of 127 ⁇ m, a partition wall top width of 25 ⁇ m, a partition wall bottom width of 50 ⁇ m, a partition wall height of 340 ⁇ m and a grid partition wall having a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 62%. Further, the porosity of the partition walls was 9.4%.
- the amount of substrate warpage of the scintillator panel 23 was 50 ⁇ m or more and 60 ⁇ m or less.
- crosstalk of emitted light occurred at 20 locations in the plane, but an image was obtained and the luminance was 145% of Example 1.
- Example 24 A buffer layer paste coating film was formed on a glass substrate in the same manner as in Example 10.
- the barrier rib photosensitive paste A was applied by a die coater so as to have a dry thickness of 1000 ⁇ m and dried to form a barrier rib photosensitive paste coating film.
- the photosensitive paste coating film for barrier ribs is applied to an ultrahigh pressure via a photomask (a chromium mask having a grid-like opening having a pitch of 508 ⁇ m and a line width of 35 ⁇ m in both vertical and horizontal directions) in which openings corresponding to a desired barrier rib pattern are formed. It exposed at 1750 mJ / cm ⁇ 2 > with the mercury lamp.
- a photomask a chromium mask having a grid-like opening having a pitch of 508 ⁇ m and a line width of 35 ⁇ m in both vertical and horizontal directions
- the exposed photosensitive paste coating film for barrier ribs was developed in a 0.5% aqueous ethanolamine solution, and unexposed portions were removed to form a lattice-shaped photosensitive paste coating film pattern. Further, the buffer layer paste coating film and the photosensitive paste coating film pattern were simultaneously fired in the air at 585 ° C. for 15 minutes, and the partition pitch 508 ⁇ m, the partition top width 45 ⁇ m, the partition bottom width 100 ⁇ m, the partition height 700 ⁇ m, and 480 mm. A partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained. The reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%. Further, the porosity of the partition walls was 10.2%.
- the amount of substrate warpage of the scintillator panel 24 was 130 ⁇ m or more and 150 ⁇ m or less.
- an image having periodic detection unevenness was obtained for every four pixels.
- the luminance was 115% of Example 1.
- Example 25 A barrier rib member was prepared in the same manner as in Example 19 except that the photosensitive paste H for barrier ribs and the buffer layer paste C were used, the photosensitive paste coating film thickness was 620 ⁇ m, and exposure was performed at 700 mJ / cm 2 with an ultrahigh pressure mercury lamp. did.
- the partition wall of the obtained partition wall member had a partition wall pitch of 127 ⁇ m, a partition wall top width of 25 ⁇ m, a partition wall bottom width of 37 ⁇ m, a partition wall height of 420 ⁇ m, and a partition wall member having a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 68%. Further, the porosity of the partition walls was 9.4%.
- the amount of substrate warpage of the scintillator panel 25 was 40 ⁇ m or more and 50 ⁇ m or less.
- a good image with a brightness variation of 1.8% was obtained without defects including linear noise, and the brightness was 152% of Example 1. It was.
- Example 26 The buffer layer paste A was applied to a 500 mm ⁇ 500 mm glass substrate (OA-10, manufactured by Nippon Electric Glass Co., Ltd.) with a 15 ⁇ m bar coater, dried, and then exposed to light of 500 mJ / cm 2 over about 12 ⁇ m. The buffer layer was formed.
- OA-10 500 mm ⁇ 500 mm glass substrate
- 15 ⁇ m bar coater 15 ⁇ m bar coater
- the photosensitive paste for barrier ribs of the previous period was applied with a die coater so as to have a dry thickness of 400 ⁇ m and dried.
- exposure was performed through a photomask (a chromium mask having a grid-like opening having a pitch of 160 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m) in which openings corresponding to the partition wall pattern were formed.
- a photomask a chromium mask having a grid-like opening having a pitch of 160 ⁇ m in both vertical and horizontal directions and a line width of 20 ⁇ m
- partition pitch 160 ⁇ m partition top width 30 ⁇ m, partition bottom width 55 ⁇ m, partition height 340 ⁇ m, 480 mm
- partition member having a grid-like partition wall having a size of ⁇ 480 mm was obtained.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 72%. Further, the porosity of the partition walls was 8.3%.
- the amount of substrate warpage of the prepared scintillator panel 26 was 70 ⁇ m or more and 80 ⁇ m or less.
- the luminance was 108% of Example 1. It was.
- Example 27 Buffer layer paste A was applied with a 30 ⁇ m bar coater, dried, and then exposed to 600 mJ / cm 2 of whole surface light with an ultrahigh pressure mercury lamp to form a buffer layer paste coating film having a thickness of 23 ⁇ m. Similarly, a partition member was produced. The partition walls of the obtained partition member were lattice-shaped partitions having a partition pitch of 127 ⁇ m, a partition top width of 22 ⁇ m, a partition bottom width of 55 ⁇ m, and a partition wall height of 325 ⁇ m and a size of 480 mm ⁇ 480 mm. The reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 64%. The partition wall porosity was 9.5%.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 3 was 30 ⁇ m or more and 40 ⁇ m or less.
- Comparative Example 1 The above-mentioned screen printing paste B for buffer layer is applied to a 500 mm ⁇ 500 mm glass substrate (OA-10 manufactured by Nippon Electric Glass Co., Ltd.) by screen printing to a film thickness of 15 ⁇ m, dried, and then buffer layer paste. A coating film was formed. Thereafter, the partition wall screen-printing glass paste A is formed into a film by screen printing using a pattern having a vertical and horizontal pitch of 160 ⁇ m, an opening length of 130 ⁇ m ⁇ 130 ⁇ m, a wall width of 35 ⁇ m and a size corresponding to a predetermined number of pixels. Coating and drying at a thickness of 40 ⁇ m were repeated 12 layers. Thereafter, firing was performed in air at 550 ° C.
- OA-10 manufactured by Nippon Electric Glass Co., Ltd.
- a partition wall having a partition wall top width of 35 ⁇ m, a partition wall bottom width of 65 ⁇ m, a partition wall height of 450 ⁇ m and a size of 480 mm ⁇ 480 mm as a size corresponding to a predetermined number of pixels.
- the reflectance with respect to 550 nm light of the portion where only the buffer layer was formed was 69%.
- the partition wall porosity was 2%.
- the substrate warpage amount of the created scintillator panel 28 was 80 ⁇ m or more and 100 ⁇ m or less.
- the luminance was 88% of that of Example 1.
- 40 or more image defects occurred in the plane.
- CsI: Tl 1 mol: 0.003 mol
- the substrate warpage amount of the scintillator panel 29 was 80 ⁇ m or more and 100 ⁇ m or less.
- the luminance was only 88% of that of Example 1. Further, the brightness variation was 7.5%, and 35 image defects were generated in the plane.
- Comparative Example 3 A partition wall member was produced in the same manner as in Comparative Example 2 except that the partition wall screen printing paste B was used.
- the partition wall of the obtained partition member was a grid-like partition wall having a partition wall pitch of 127 ⁇ m, a partition wall top width of 35 ⁇ m, a partition wall bottom width of 55 ⁇ m, and a partition wall height of 350 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 65%.
- the partition wall porosity was 4.1%.
- the amount of substrate warpage of the scintillator panel 30 was 60 ⁇ m or more and 70 ⁇ m or less.
- the luminance was only 90% of that of Example 1.
- the luminance variation was 6.5%, and 35 image defects occurred in the plane.
- Comparative Example 4 A partition wall member was prepared in the same manner as in Example 2, except that the partition wall photosensitive paste M was used and the firing temperature was changed to 710 ° C. for 20 minutes.
- the partition walls of the partition member obtained were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 35 ⁇ m, partition wall bottom width of 48 ⁇ m, partition wall height of 380 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance with respect to light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 53%.
- the partition wall porosity was 30%.
- the warpage amount of the obtained panel was greatly distorted to 700 ⁇ m or more and 800 ⁇ m or less, and the partition wall was not cut or cracked.
- Comparative Example 5 A partition wall member was produced in the same manner as in Example 2 except that the baking temperature was set to 530 ° C. for 15 minutes using the partition wall photosensitive paste N.
- the partition walls of the partition member thus obtained were lattice-shaped partition walls having a partition wall pitch of 127 ⁇ m, partition wall top width of 35 ⁇ m, partition wall bottom width of 100 ⁇ m, partition wall height of 280 ⁇ m and a size of 480 mm ⁇ 480 mm.
- the reflectance of light having a wavelength of 550 nm in the portion where only the buffer layer was formed was 75%, but the low melting point glass of the buffer paste did not sinter and cracks occurred at the interface between the partition walls and the buffer layer.
- the partition wall porosity was 1%.
- CsI: Tl 1 mol: 0.003 mol
- CsI: TlI 1 mol: 0.003 mol
- the amount of substrate warpage of the scintillator panel 31 was 250 ⁇ m or more and 300 ⁇ m or less.
- deformation of the partition wall occurred, and the phosphor adhered to the top of the partition wall.
- the luminance was only 75% of that of Example 1. Further, the brightness variation was 9.8%, and 50 image defects occurred in the plane.
- a radiation detection apparatus can be obtained that has a high light emission luminance and that has little distortion of the partition wall structure, image unevenness, and linear noise, and that can provide a good image.
Abstract
Description
(1)平板状の基板、該基板の上に設けられた格子状の隔壁、および、前記隔壁により区画されたセル内に充填された蛍光体からなるシンチレータ層を有するシンチレータパネルであって、前記隔壁が、アルカリ金属酸化物を2~20質量%含有する低融点ガラスを主成分とする材料により構成されているシンチレータパネル。
(2)平板状の基板および該基板の上に設けられた格子状の隔壁を有する隔壁部材を製造する方法であって、
基板上に、アルカリ金属酸化物を2~20質量%含有する低融点ガラス粉末と感光性有機成分を含有する感光性ペーストを塗布し、感光性ペースト塗布膜を形成する工程、
得られた感光性ペースト塗布膜を所定の開口部を有するフォトマスクを介して露光する工程、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程、
現像後の感光性ペースト塗布膜パターンを500℃~700℃に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、隔壁を形成する焼成工程、
を含む隔壁部材の製造方法。
(3)平板状の基板、該基板の上に設けられた格子状の隔壁、および、該隔壁により区画されたセル内に充填された蛍光体からなるシンチレータ層を有するシンチレータパネルを製造する方法であって、
基板上に、アルカリ金属酸化物を2~20質量%含有する低融点ガラス粉末と感光性有機成分を含有する感光性ペーストを塗布し、感光性ペースト塗布膜を形成する工程、
得られた感光性ペースト塗布膜を所定の開口部を有するフォトマスクを介して露光する工程、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程、
現像後の感光性ペースト塗布膜パターンを500℃~700℃に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、隔壁を形成する焼成工程、および、
該隔壁により区画されたセル内に蛍光体を充填する工程、
を含むシンチレータパネルの製造方法。
(4)平板状の基板、該基板の上に設けられた緩衝層、該緩衝層の上に設けられた格子状の隔壁、および、該隔壁により区画されたセル内に充填された蛍光体からなるシンチレータ層を有するシンチレータパネルを製造する方法であって、
基板上に、低融点ガラス粉末およびセラミックス粉末から選ばれた無機粉末および感光性有機成分を含む緩衝層用ペーストを塗布し、緩衝層用ペースト塗布膜を形成する工程、
該緩衝層用ペースト塗布膜を全面露光する工程、
露光後の緩衝層用ペースト塗布膜の上に、アルカリ金属酸化物を2~20質量%含有する低融点ガラス粉末と感光性有機成分を含有する隔壁用感光性ペーストを塗布し、隔壁用感光性ペースト塗布膜を形成する工程、
得られた隔壁用感光性ペースト塗布膜を所定の開口部を有するフォトマスクを介して露光する工程、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程、
緩衝層用ペースト塗布膜および現像後の感光性ペースト塗布膜パターンを500℃~700℃に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、緩衝層および隔壁を同時に形成する焼成工程、および、
該隔壁により区画されたセル内に蛍光体を充填する工程、
を含むシンチレータパネルの製造方法。
酸化亜鉛:3~10質量%
酸化ケイ素:20~40質量%
酸化ホウ素:25~40質量%
酸化アルミニウム:10~30質量%
アルカリ土類金属酸化物:5~15質量%
なお、アルカリ土類金属とは、マグネシウム、カルシウム、バリウムおよびストロンチウムから選ばれる1種類以上の金属を指す。
(隔壁用感光性ペーストの原料)
実施例の感光性ペーストに用いた原料は次の通りである。
感光性モノマーM-1 : トリメチロールプロパントリアクリレート
感光性モノマーM-2 : テトラプロピレングリコールジメタクリレート
感光性モノマーM-3 : 下記式(A)において、R1、R2は水素、R3はエチレンオキサイド-プロピレンオキサイドコオリゴマー、R4はイソフォロンジイソシアネート残基、分子量は19,000
R1-(R4-R3)n-R4-R2 (A)
感光性ポリマー:メタクリル酸/メタクリル酸メチル/スチレン=40/40/30の質量比からなる共重合体のカルボキシル基に対して0.4当量のグリシジルメタクリレートを付加反応させたもの(重量平均分子量43000、酸価100)
光重合開始剤:2-ベンジル-2-ジメチルアミノ-1-(4-モルフォリノフェニル)ブタノン-1(BASF社製 IC369)。
重合禁止剤:1,6-ヘキサンジオール-ビス[(3,5-ジ-t-ブチル-4-ヒドロキシフェニル)プロピオネート])
紫外線吸収剤溶液:スダンIV(東京応化工業株式会社製)のγ―ブチロラクトン0.3質量%溶液
バインダーポリマー:エチルセルロース(ハーキュレス社製)
粘度調整剤:フローノンEC121(共栄社化学社製)
溶媒A:γ-ブチロラクトン
溶媒B:テルピネオール
低融点ガラス粉末A:
SiO2 27質量%、B2O3 31質量%、ZnO 6質量%、Li2O 7質量%、MgO 2質量%、CaO 2質量%、BaO 2質量%、Al2O3 23質量%、屈折率(ng):1.56、軟化温度588℃、熱膨張係数68×10-7、平均粒子径2.3μm
低融点ガラス粉末B:
SiO2 28質量%、B2O3 30質量%、ZnO 6質量%、Li2O 2質量%、MgO 3質量%、CaO 3質量%、BaO 3質量%、Al2O3 25質量%、屈折率(ng):1.551、軟化温度649℃、熱膨張係数49×10-7、平均粒子径2.1μm
低融点ガラス粉末C:
SiO2 28質量%、B2O3 23質量%、ZnO 4質量%、Li2O 5質量%、K2O 15質量%、MgO 4質量%、BaO 1質量%、Al2O3 20質量%、屈折率(ng):1.563、軟化温度540℃、熱膨張係数86×10-7、平均粒子径2.2μm
低融点ガラス粉末D:
SiO2 27質量%、B2O3 33質量%、ZnO 4質量%、Li2O 4質量%、K2O 2質量%、MgO 2質量%、CaO 3質量%、BaO 2質量%、Al2O3 23質量%、屈折率(ng):1.553、軟化温度613℃、熱膨張係数55×10-7、平均粒子径2.1μm
低融点ガラス粉末E:
SiO2 29質量%、B2O3 32質量%、ZnO 4質量%、Li2O 6質量%、K2O 8質量%、MgO 2質量%、CaO 2質量%、BaO 2質量%、Al2O3 15質量%、屈折率(ng):1.565、軟化温度570℃、熱膨張係数70×10-7、平均粒子径2.5μm
低融点ガラス粉末F:
SiO2 26質量%、B2O3 32質量%、ZnO 2質量%、Li2O 2質量%、K2O 1質量%、MgO 1質量%、CaO 2質量%、BaO 10質量%、Al2O3 24質量%、屈折率(ng):1.546、軟化温度655℃、熱膨張係数45×10-7、平均粒子径2.1μm
ガラス粉末G:
SiO2 30質量%、B2O3 34質量%、ZnO 4質量%、Li2O 1質量%、MgO 1質量%、CaO 2質量%、BaO 3質量%、Al2O3 26質量%、屈折率(ng):1.542、軟化温度721℃、熱膨張係数38×10-7、平均粒子径2.0μm
低融点ガラス粉末H:
SiO2 22質量%、B2O3 30質量%、ZnO 1質量%、Li2O 8質量%、Na2O 10質量%、K2O 6質量%、MgO 4質量%、BaO 11質量%、Al2O3 8質量%、屈折率(ng):1.589、軟化温度520℃、熱膨張係数89×10-7、平均粒子径2.4μm
高融点ガラス粉末A:
SiO2 30質量%、B2O3 31質量%、ZnO 6質量%、MgO 2質量%、CaO 2質量%、BaO 2質量%、Al2O3 27質量%、屈折率(ng):1.55、軟化温度790℃、熱膨張係数32×10-7、平均粒子径2.3μm
(隔壁用ペーストの作製)
上記材料を用いて、隔壁ペーストを以下の方法で作製した。
隔壁用ペーストに用いた原料以外について、以下に記載する。
重合性モノマー:ジペンタエリスリトールヘキサアクリレート(共栄社化学(株)製)
熱重合開始剤: アゾビスイソブチロニトリル
酸化チタン粉末:酸化チタン粉末、平均粒子径0.1μm。
隔壁用感光性ペーストA 97質量部に、上記の酸化チタン粉末3質量部を添加して、再混練することにより、光硬化型の緩衝層用ペーストAを作製した。
基板上に緩衝層および隔壁が形成された隔壁部材について、緩衝層のみが形成された部分を分光測色計(コニカミノルタ社製「CM-2002」)SCEモードで測定し、波長550nmの光の反射率を評価した。
蛍光体体積充填率は、次のようにして測定した。基板上に緩衝層および隔壁が形成された隔壁部材の重量と、さらに蛍光体充填後のシンチレータパネルの重量の差を充填された蛍光体の総重量とした。算出された蛍光体の総重量を、蛍光体の比重で除算し、蛍光体体積量を算出した。さらに、蛍光体体積量を全セル内の空間体積量で除算した計算値を、蛍光体の体積充填率とした。ここで、全セル体積量とは、隔壁で区画された1個のセル内の空間体積およびシンチレータパネルに含まれる全セル数を乗算した値である。
V={(P-Lb)×(P-Lt)+(P-Lb)2+(P-Lt)2}×H/3 ・・・(式1)
(シンチレータパネルの反り測定)
作製したシンチレータパネルの基板側を板ガラスなどの平板上に置き、平板とシンチレータパネル間に存在する隙間をシクネスゲージ(トラスコ中山社製)で測定し、パネルの反り量とした。
作製したシンチレータパネルを、PaxScan2520、PaxScan4336およびPaxScan3030(Varian社製FPD)のいずれかにセットして放射線検出装置を作製した。管電圧80kVpのX線をシンチレータパネルの基板側から照射し、蛍光体層から発光された光の発光量をPaxScan2520、PaxScan4336およびPaxScan3030のいずれかで検出した。輝度の評価は、実施例1の結果に対する相対評価で行った。
作製したシンチレータパネルをPaxScan2520、PaxScan4336およびPaxScan3030のいずれかにセットし、放射線検出装置を作製した。管電圧80kVpのX線をシンチレータパネルの基板側から照射し、ベタ画像を撮影した。これを画像再生装置によって画像として再生し、得られたプリント画像を目視により観察して、画像欠陥、クロストークや線状ノイズの有無を評価した。
500mm×500mmのガラス基板(日本電気硝子社製OA-10、熱膨張係数38×10-7、基板厚さ0.7mm)に、前記の隔壁用感光性ペーストAを乾燥厚さ500μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ127μm、線幅20μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で600mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で感光性ペースト塗布膜パターンを焼成し、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅50μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。隔壁の空隙率は、8.3%となった。
500mm×500mmのガラス基板(日本電気硝子社製OA-10)に、前記の緩衝層用ペーストAを15μmバーコーターで塗布し、乾燥した後に、超高圧水銀灯で500mJ/cm2の全面光照射を行い、厚さ12μmの緩衝層用ペースト塗布膜を形成した。
隔壁用感光性ペーストBを用いて、焼成を645℃で15分間実施した以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅22μm、隔壁底部幅60μm、隔壁高さ325μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、53%であった。また、隔壁の空隙率は、9.5%であった。
隔壁用感光性ペーストCを用いて、焼成を540℃で15分間実施した以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅23μm、隔壁底部幅55μm、隔壁高さ320μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、70%であった。また、隔壁の空隙率は、4.4%であった。
隔壁用感光性ペーストDを用いた以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅24μm、隔壁底部幅53μm、隔壁高さ320μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、0.8%であった。
隔壁用感光性ペーストEを用いた以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅24μm、隔壁底部幅53μm、隔壁高さ320μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、2.0%であった。
隔壁用感光性ペーストFを用いた以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅34μm、隔壁底部幅60μm、隔壁高さ370μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、24.8%であった。
隔壁用感光性ペーストGを用いた以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅35μm、隔壁底部幅60μm、隔壁高さ380μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、32.3%であった。
隔壁用感光性ペーストHを用いて、焼成を620℃で15分間実施した以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅40μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、60%であった。また、隔壁の空隙率は、9.4%であった。
500mm×500mmのガラス基板(日本電気硝子社製OA-10)に、前記の緩衝層用ペーストBを15μmバーコーターで塗布し、150℃、30分間乾燥・加熱硬化させて厚さ12μmの緩衝層用ペースト塗布膜を形成した以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅48μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、66%であった。また、隔壁の空隙率は、8.1%となった。
500mm×500mmのガラス基板(日本電気硝子社製OA-10)に、前記の緩衝層用ペーストBを15μmバーコーターで塗布し、150℃、30分間乾燥および加熱硬化させて厚さ12μmの緩衝層用ペースト塗布膜を形成した。基板上に形成した緩衝層用ペースト塗布膜を585℃で15分間、空気中で、焼成して緩衝層を形成した。以下、実施例2と同様に、隔壁用感光性ペーストを形成し、格子状の感光性ペースト塗布膜パターンを形成した。さらに、585℃で15分間、空気中で感光性ペースト塗布膜パターンを焼成した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅51μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、60%であった。また、隔壁の空隙率は、8.1%となった。
隔壁用感光性ペーストIを用いた以外は実施例10と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅60μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、8.2%となった。
隔壁用感光性ペーストJを用い、焼成温度を565℃15分とした以外は実施例1と同様に隔壁部材を作製した。しかし、感光性ペースト塗布膜露光時の露光量の調整を実施したが、感光性ペーストパターンの一部に埋まりが発生し、面内均一な隔壁幅の隔壁は得られなかった。適当な露光量として、超高圧水銀灯で500mJ/cm2で露光し、形成して得られた隔壁は、埋りが発生していない箇所を測定し、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅75μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、67%であったが、緩衝用ペーストの低融点ガラスの焼結が進まず、隔壁と緩衝層の界面に亀裂が発生した。また、隔壁の空隙率は、3.0%であった。
実施例2と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストAを乾燥厚さ590μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ127μm、線幅20μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で750mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ127μm、隔壁頂部幅27μm、隔壁底部幅65μm、隔壁高さ400μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、8.1%となった。
実施例2と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストAを乾燥厚さ740μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ194μm、線幅20μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で950mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ194μm、隔壁頂部幅28μm、隔壁底部幅58μm、隔壁高さ500μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、64%であった。また、隔壁の空隙率は、7.9%となった。
実施例2と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストAを乾燥厚さ210μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ63.5μm、線幅14μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で450mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ63.5μm、隔壁頂部幅16μm、隔壁底部幅22μm、隔壁高さ160μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、64%であった。また、隔壁の空隙率は、7.9%となった。
実施例2と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストAを乾燥厚さ680μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ139μm、線幅20μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で820mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ139μm、隔壁頂部幅26μm、隔壁底部幅51μm、隔壁高さ450μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、8.1%となった。
隔壁用感光性ペーストK、緩衝層ペーストCを用いて、焼成を650℃で15分間実施した以外は実施例10と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅24μm、隔壁底部幅70μm、隔壁高さ370μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、66%であった。また、隔壁の空隙率は、14.1%であった。
実施例10と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストHを乾燥厚さ290μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ127μm、線幅20μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で550mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに620℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ127μm、隔壁頂部幅20μm、隔壁底部幅30μm、隔壁高さ200μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、61%であった。また、隔壁の空隙率は、9.0%となった。
隔壁用感光性ペーストHを乾燥厚み360μmとし、超高圧水銀灯で600mJ/cm2で露光した以外は、実施例19と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅22μm、隔壁底部幅35μm、隔壁高さ250μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、61%であった。また、隔壁の空隙率は、9.2%となった。
実施例15と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストAを乾燥厚さ580μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ194μm、線幅20μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で1000mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ194μm、隔壁頂部幅25μm、隔壁底部幅50μm、隔壁高さ400μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、66%であった。また、隔壁の空隙率は、8.5%となった。
隔壁用感光性ペーストHを乾燥厚み500μmとし、超高圧水銀灯で600mJ/cm2で露光した以外は、実施例19と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅24μm、隔壁底部幅45μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、61%であった。また、隔壁の空隙率は、9.2%となった。
隔壁用感光性ペーストHを用いて、実施例22と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅50μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、62%であった。また、隔壁の空隙率は、9.4%となった。
実施例10と同様にガラス基板上に緩衝層用ペースト塗布膜を形成した。次に、前記の隔壁用感光性ペーストAを乾燥厚み1000μmになるように、ダイコーターで塗布し、乾燥して、隔壁用感光性ペースト塗布膜を形成した。次に、所望の隔壁パターンに対応する開口部を形成したフォトマスク(縦横ともピッチ508μm、線幅35μmの格子状開口部を有するクロムマスク)を介して、隔壁用感光性ペースト塗布膜を超高圧水銀灯で1750mJ/cm2で露光した。露光後の隔壁用感光性ペースト塗布膜を、0.5%のエタノールアミン水溶液中で現像し、未露光部分を除去して、格子状の感光性ペースト塗布膜パターンを形成した。さらに585℃で15分間、空気中で、緩衝層用ペースト塗布膜と感光性ペースト塗布膜パターンを同時焼成し、隔壁ピッチ508μm、隔壁頂部幅45μm、隔壁底部幅100μm、隔壁高さ700μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、10.2%となった。
隔壁用感光性ペーストH、緩衝層ペーストCを用いて、感光性ペースト塗布膜の厚みを620μmとし、超高圧水銀灯で700mJ/cm2で露光した以外は、実施例19と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅25μm、隔壁底部幅37μm、隔壁高さ420μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を得た。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、68%であった。また、隔壁の空隙率は、9.4%となった。
500mm×500mmのガラス基板(日本電気硝子社製OA-10)に、前記の緩衝層用ペーストAを15μmバーコーターで塗布し、乾燥した後に、500mJ/cm2の全面光照射を行い、約12μmの緩衝層を形成した。
緩衝層ペーストAを30μmバーコーターで塗布し、乾燥した後、超高圧水銀灯で600mJ/cm2の全面光照射を行い、厚さ23μmの緩衝層用ペースト塗布膜を形成した以外は実施例3と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅22μm、隔壁底部幅55μm、隔壁高さ325μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、64%であった。また、隔壁の空隙率は、9.5%であった。
500mm×500mmのガラス基板(日本電気硝子社製OA-10)に、前述の緩衝層用スクリーン印刷用ペーストBを、スクリーン印刷により15μmの膜厚で塗工し、乾燥させて、緩衝層用ペースト塗布膜を形成した。その後、縦方向及び横方向のピッチ160μm、開口長さ130μm×130μm、壁幅35μmで所定の画素数に見合う大きさのパターンを用いて前記隔壁用スクリーン印刷用ガラスペーストAをスクリーン印刷によって、膜厚40μmでの塗布及び乾燥を12層繰り返した。その後、550℃の空気中で焼成を行い、隔壁頂部幅35μm、隔壁底部幅65μm、隔壁高さ450μmで所定の画素数に見合う大きさとして480mm×480mmの大きさの隔壁を形成した。緩衝層のみを形成した部分の550nmの光に対する反射率は、69%であった。また、隔壁の空隙率は、2%であった。
500mm×500mmのガラス基板(日本電気硝子社製OA-10)に、前述の緩衝層用スクリーン印刷用ペーストBを、スクリーン印刷により15μmの膜厚で塗工し、乾燥させて、緩衝層用ペースト塗布膜を形成した。次に、該緩衝層用ペースト塗布膜の上に、前記隔壁スクリーン印刷ペーストAをスクリーン印刷によって塗布した。スクリーン版として、縦方向および横方向のピッチ127μm、開口長さ92μm×92μm、壁幅35μmで所定の画素数に見合う大きさの格子状のパターンを有するスクリーンを用いて、1回あたり膜厚40μmの塗布および乾燥を10回繰り返し、高さ400μmの格子状の隔壁パターンを得た。その後、550℃の空気中で、緩衝層用ペースト塗布膜と隔壁パターンを585℃で15分間、空気中で同時焼成し、隔壁ピッチ127μm、隔壁頂部幅35μm、隔壁底部幅55μm、隔壁高さ340μmで、480mm×480mmの大きさの格子状隔壁を有する隔壁部材を形成した。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、1.5%であった。
隔壁用スクリーン印刷ペーストBを用いた以外、比較例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅35μm、隔壁底部幅55μm、隔壁高さ350μmで、480mm×480mmの大きさの格子状隔壁をであった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、65%であった。また、隔壁の空隙率は、4.1%であった。
隔壁用感光性ペーストMを用いて、焼成温度を710℃20分とした以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅35μm、隔壁底部幅48μm、隔壁高さ380μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、53%であった。また、隔壁の空隙率は、30%であった。得られたパネルの反り量は700μm以上、800μm以下と大きく歪み、また、隔壁の欠けや割れが発生するためパネル化することができなかった。
隔壁用感光性ペーストNを用いて、焼成温度を530℃15分とした以外は実施例2と同様に隔壁部材を作製した。得られた隔壁部材の隔壁は、隔壁ピッチ127μm、隔壁頂部幅35μm、隔壁底部幅100μm、隔壁高さ280μmで、480mm×480mmの大きさの格子状隔壁であった。緩衝層のみを形成した部分の波長550nmの光に対する反射率は、75%であったが、緩衝用ペーストの低融点ガラスの焼結が進まず、隔壁と緩衝層の界面に亀裂が発生した。また、隔壁の空隙率は、1%であった。
2 シンチレータパネル
3 出力基板
4 基板
5 緩衝層
6 隔壁
7 シンチレータ層
8 隔膜層
9 光電変換層
10 出力層
11 基板
12 電源部
Claims (9)
- 平板状の基板、該基板の上に設けられた格子状の隔壁、および、前記隔壁により区画されたセル内に充填された蛍光体からなるシンチレータ層を有するシンチレータパネルであって、前記隔壁が、アルカリ金属酸化物を2~20質量%含有する低融点ガラスを主成分とする材料により構成されているシンチレータパネル。
- 前記隔壁により区画されたセル内の空間体積に対して、蛍光体が占める体積分率が55%~100%である請求項1記載のシンチレータパネル。
- 前記低融点ガラスの熱膨張係数が40~70×10-7(/K)の低融点ガラスである請求項1または2に記載のシンチレータパネル。
- 前記隔壁が空隙を含み、隔壁全体に対する空隙部分の比率を空隙率としたときに、空隙率が、2~25体積%の範囲内である請求項1~3のいずれかに記載のシンチレータパネル。
- 前記隔壁と前記基板の間に、低融点ガラスおよびセラミックスから選ばれた無機成分からなる緩衝層をさらに有し、その緩衝層の550nmの波長の光に対する反射率が、60%以上である請求項1~4のいずれかに記載のシンチレータパネル。
- 平板状の基板および該基板の上に設けられた格子状の隔壁を有する隔壁部材を製造する方法であって、
基板上に、アルカリ金属酸化物を2~20質量%含有する低融点ガラス粉末と感光性有機成分を含有する感光性ペーストを塗布し、感光性ペースト塗布膜を形成する工程、
得られた感光性ペースト塗布膜を所定の開口部を有するフォトマスクを介して露光する工程、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程、
現像後の感光性ペースト塗布膜パターンを500℃~700℃に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、隔壁を形成する焼成工程、
を含む隔壁部材の製造方法。 - 平板状の基板、該基板の上に設けられた格子状の隔壁、および、該隔壁により区画されたセル内に充填された蛍光体からなるシンチレータ層を有するシンチレータパネルを製造する方法であって、
基板上に、アルカリ金属酸化物を2~20質量%含有する低融点ガラス粉末と感光性有機成分を含有する感光性ペーストを塗布し、感光性ペースト塗布膜を形成する工程、
得られた感光性ペースト塗布膜を所定の開口部を有するフォトマスクを介して露光する工程、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程、
現像後の感光性ペースト塗布膜パターンを500℃~700℃に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、隔壁を形成する焼成工程、および、
該隔壁により区画されたセル内に蛍光体を充填する工程、
を含むシンチレータパネルの製造方法。 - 平板状の基板、該基板の上に設けられた緩衝層、該緩衝層の上に設けられた格子状の隔壁、および、該隔壁により区画されたセル内に充填された蛍光体からなるシンチレータ層を有するシンチレータパネルを製造する方法であって、
基板上に、低融点ガラス粉末およびセラミックス粉末から選ばれた無機粉末および感光性有機成分を含む緩衝層用ペーストを塗布し、緩衝層用ペースト塗布膜を形成する工程、
該緩衝層用ペースト塗布膜を全面露光する工程、
露光後の緩衝層用ペースト塗布膜の上に、アルカリ金属酸化物を2~20質量%含有する低融点ガラス粉末と感光性有機成分を含有する隔壁用感光性ペーストを塗布し、隔壁用感光性ペースト塗布膜を形成する工程、
得られた隔壁用感光性ペースト塗布膜を所定の開口部を有するフォトマスクを介して露光する工程、
露光後の感光性ペースト塗布膜の現像液に可溶な部分を溶解除去する現像工程、
緩衝層用ペースト塗布膜および現像後の感光性ペースト塗布膜パターンを500℃~700℃に加熱して有機成分を除去すると共に低融点ガラスを軟化および焼結させ、緩衝層および隔壁を同時に形成する焼成工程、および、
該隔壁により区画されたセル内に蛍光体を充填する工程、
を含むシンチレータパネルの製造方法。 - 前記感光性ペースト中に含まれる低融点ガラス粉末の平均屈折率n1と感光性有機成分の平均屈折率n2が、-0.1<n1-n2<0.1を満たす請求項6~8のいずれかに記載のシンチレータパネルの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012525764A JP5110230B1 (ja) | 2011-05-26 | 2012-05-25 | シンチレータパネルおよびシンチレータパネルの製造方法 |
CN201280025379.0A CN103563006B (zh) | 2011-05-26 | 2012-05-25 | 闪烁体面板以及闪烁体面板的制造方法 |
US14/119,306 US9177683B2 (en) | 2011-05-26 | 2012-05-25 | Scintillator panel and method for manufacturing scintillator panel |
KR1020137026957A KR101925823B1 (ko) | 2011-05-26 | 2012-05-25 | 신틸레이터 패널 및 신틸레이터 패널의 제조 방법 |
EP12789890.6A EP2717272B1 (en) | 2011-05-26 | 2012-05-25 | Scintillator panel and method for manufacturing scintillator panel |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-117712 | 2011-05-26 | ||
JP2011117712 | 2011-05-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012161304A1 true WO2012161304A1 (ja) | 2012-11-29 |
Family
ID=47217369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/063441 WO2012161304A1 (ja) | 2011-05-26 | 2012-05-25 | シンチレータパネルおよびシンチレータパネルの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9177683B2 (ja) |
EP (1) | EP2717272B1 (ja) |
JP (1) | JP5110230B1 (ja) |
KR (1) | KR101925823B1 (ja) |
CN (1) | CN103563006B (ja) |
WO (1) | WO2012161304A1 (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0487359A (ja) * | 1990-07-31 | 1992-03-19 | Sanyo Electric Co Ltd | 混成集積回路装置 |
WO2014021415A1 (ja) * | 2012-08-03 | 2014-02-06 | 東レ株式会社 | シンチレータパネルおよびシンチレータパネルの製造方法 |
JP2014029314A (ja) * | 2012-06-25 | 2014-02-13 | Sony Corp | 放射線検出器及びその製造方法 |
WO2014054422A1 (ja) * | 2012-10-03 | 2014-04-10 | 東レ株式会社 | シンチレータパネルおよびシンチレータパネルの製造方法 |
WO2014080941A1 (ja) * | 2012-11-26 | 2014-05-30 | 東レ株式会社 | シンチレータパネルおよびその製造方法 |
JP2014126362A (ja) * | 2012-12-25 | 2014-07-07 | Toray Ind Inc | シンチレータパネルおよびシンチレータパネルの製造方法 |
WO2015068686A1 (ja) * | 2013-11-06 | 2015-05-14 | 東レ株式会社 | 立体構造物の製造方法、シンチレータパネルの製造方法、立体構造物及びシンチレータパネル |
CN105723468A (zh) * | 2013-11-20 | 2016-06-29 | 东丽株式会社 | 闪烁体面板 |
EP2924691A4 (en) * | 2012-11-26 | 2016-08-03 | Toray Industries | SCINTILLATE PANEL AND METHOD FOR PRODUCING A SCINTILLATE PANEL |
WO2016143401A1 (ja) * | 2015-03-10 | 2016-09-15 | 株式会社島津製作所 | X線検出器 |
KR20170039659A (ko) | 2014-08-08 | 2017-04-11 | 도레이 카부시키가이샤 | 신틸레이터 패널 및 방사선 검출기 |
US20170234993A1 (en) * | 2014-08-08 | 2017-08-17 | Toray Industries, Inc. | Method for manufacturing display member |
JP2017191113A (ja) * | 2012-06-25 | 2017-10-19 | ソニー株式会社 | 放射線検出器及びその製造方法 |
JP2018500549A (ja) * | 2014-11-13 | 2018-01-11 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 最適化された効率を有するピクセル化されたシンチレータ |
KR20180136430A (ko) | 2016-04-27 | 2018-12-24 | 도레이 카부시키가이샤 | 신틸레이터 패널 및 그 제조 방법, 및 방사선 검출 장치 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6277721B2 (ja) * | 2012-11-01 | 2018-02-14 | 東レ株式会社 | 放射線検出装置およびその製造方法 |
CN104781889B (zh) | 2012-11-16 | 2017-06-27 | 东丽株式会社 | 闪烁体面板 |
CN105093254B (zh) * | 2014-04-25 | 2018-06-19 | 中国科学院宁波材料技术与工程研究所 | 闪烁体阵列及其制备方法 |
WO2016006483A1 (ja) * | 2014-07-07 | 2016-01-14 | 東レ株式会社 | シンチレータパネル、放射線検出器およびその製造方法 |
US9436866B2 (en) * | 2014-08-01 | 2016-09-06 | General Electric Company | High sensitivity flat panel microbiology detection and enumeration system |
DE102014224449A1 (de) * | 2014-11-28 | 2016-06-02 | Forschungszentrum Jülich GmbH | Szintillationsdetektor mit hoher Zählrate |
JP6742593B2 (ja) * | 2015-01-05 | 2020-08-19 | 日本電気硝子株式会社 | 支持ガラス基板の製造方法及び積層体の製造方法 |
JP6575105B2 (ja) * | 2015-03-27 | 2019-09-18 | コニカミノルタ株式会社 | シンチレータパネルおよびその製造方法 |
JP2016188857A (ja) * | 2015-03-27 | 2016-11-04 | コニカミノルタ株式会社 | シンチレータパネル、放射線検出器およびシンチレータパネルの製造方法 |
CN106348333B (zh) * | 2016-08-31 | 2017-11-10 | 华中师范大学 | 萃取精制湿法磷酸中脱硫工序内硫酸钡的回收方法 |
JP6717126B2 (ja) * | 2016-09-01 | 2020-07-01 | コニカミノルタ株式会社 | 放射線画像検出器 |
KR101969024B1 (ko) | 2017-12-12 | 2019-04-15 | 주식회사 비투지코리아 | 섬광체 구조 및 그 제조 방법, 그리고 이를 포함하는 엑스선 영상 검출기 |
CN111410563B (zh) * | 2020-03-30 | 2020-12-04 | 肖贵遐 | 一种金属化隔离的闪烁陶瓷阵列结构及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0560871A (ja) | 1991-09-04 | 1993-03-12 | Hamamatsu Photonics Kk | 放射線検出素子 |
JPH05188148A (ja) | 1992-01-13 | 1993-07-30 | Hamamatsu Photonics Kk | 放射線検出素子 |
WO2003067282A1 (fr) * | 2002-02-08 | 2003-08-14 | Kabushiki Kaisha Toshiba | Detecteur de rayons x et procede de production d'un tel detecteur |
JP2011007552A (ja) | 2009-06-24 | 2011-01-13 | Konica Minolta Medical & Graphic Inc | シンチレータパネル、放射線検出装置、及びシンチレータパネルの製造方法 |
JP2011188148A (ja) | 2010-03-05 | 2011-09-22 | Toshiba Corp | 固体撮像装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5209688A (en) * | 1988-12-19 | 1993-05-11 | Narumi China Corporation | Plasma display panel |
TW375759B (en) * | 1996-07-10 | 1999-12-01 | Toray Industries | Plasma display and preparation thereof |
EP2163531A1 (en) * | 2008-09-11 | 2010-03-17 | Samsung SDI Co., Ltd. | Material for forming barrier ribs and pdp comprising the same |
JP2011021924A (ja) * | 2009-07-14 | 2011-02-03 | Konica Minolta Medical & Graphic Inc | シンチレータパネル、放射線検出装置、及びシンチレータパネルの製造方法 |
JP5593662B2 (ja) * | 2009-09-29 | 2014-09-24 | 東レ株式会社 | 感光性ペースト、絶縁性パターンの形成方法および平面ディスプレイ用パネルの製造方法 |
-
2012
- 2012-05-25 JP JP2012525764A patent/JP5110230B1/ja active Active
- 2012-05-25 EP EP12789890.6A patent/EP2717272B1/en active Active
- 2012-05-25 CN CN201280025379.0A patent/CN103563006B/zh active Active
- 2012-05-25 US US14/119,306 patent/US9177683B2/en active Active
- 2012-05-25 KR KR1020137026957A patent/KR101925823B1/ko active IP Right Grant
- 2012-05-25 WO PCT/JP2012/063441 patent/WO2012161304A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0560871A (ja) | 1991-09-04 | 1993-03-12 | Hamamatsu Photonics Kk | 放射線検出素子 |
JPH05188148A (ja) | 1992-01-13 | 1993-07-30 | Hamamatsu Photonics Kk | 放射線検出素子 |
WO2003067282A1 (fr) * | 2002-02-08 | 2003-08-14 | Kabushiki Kaisha Toshiba | Detecteur de rayons x et procede de production d'un tel detecteur |
JP2011007552A (ja) | 2009-06-24 | 2011-01-13 | Konica Minolta Medical & Graphic Inc | シンチレータパネル、放射線検出装置、及びシンチレータパネルの製造方法 |
JP2011188148A (ja) | 2010-03-05 | 2011-09-22 | Toshiba Corp | 固体撮像装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2717272A4 |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0487359A (ja) * | 1990-07-31 | 1992-03-19 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2017191113A (ja) * | 2012-06-25 | 2017-10-19 | ソニー株式会社 | 放射線検出器及びその製造方法 |
JP2014029314A (ja) * | 2012-06-25 | 2014-02-13 | Sony Corp | 放射線検出器及びその製造方法 |
WO2014021415A1 (ja) * | 2012-08-03 | 2014-02-06 | 東レ株式会社 | シンチレータパネルおよびシンチレータパネルの製造方法 |
US9684082B2 (en) | 2012-10-03 | 2017-06-20 | Toray Industries, Inc. | Scintillator panel and method for manufacturing scintillator panel |
JP5488773B1 (ja) * | 2012-10-03 | 2014-05-14 | 東レ株式会社 | シンチレータパネルおよびシンチレータパネルの製造方法 |
WO2014054422A1 (ja) * | 2012-10-03 | 2014-04-10 | 東レ株式会社 | シンチレータパネルおよびシンチレータパネルの製造方法 |
WO2014080941A1 (ja) * | 2012-11-26 | 2014-05-30 | 東レ株式会社 | シンチレータパネルおよびその製造方法 |
JPWO2014080941A1 (ja) * | 2012-11-26 | 2017-01-05 | 東レ株式会社 | シンチレータパネルおよびその製造方法 |
US9632185B2 (en) | 2012-11-26 | 2017-04-25 | Toray Industries, Inc. | Scintillator panel and method for manufacturing the same |
EP2924691A4 (en) * | 2012-11-26 | 2016-08-03 | Toray Industries | SCINTILLATE PANEL AND METHOD FOR PRODUCING A SCINTILLATE PANEL |
EP2924692A4 (en) * | 2012-11-26 | 2016-08-03 | Toray Industries | SCINTILLATOR PANEL AND ITS MANUFACTURING METHOD |
JP2014126362A (ja) * | 2012-12-25 | 2014-07-07 | Toray Ind Inc | シンチレータパネルおよびシンチレータパネルの製造方法 |
CN105705466A (zh) * | 2013-11-06 | 2016-06-22 | 东丽株式会社 | 立体结构物的制造方法、闪烁体面板的制造方法、立体结构物和闪烁体面板 |
WO2015068686A1 (ja) * | 2013-11-06 | 2015-05-14 | 東レ株式会社 | 立体構造物の製造方法、シンチレータパネルの製造方法、立体構造物及びシンチレータパネル |
KR102099091B1 (ko) | 2013-11-06 | 2020-04-09 | 도레이 카부시키가이샤 | 입체 구조물의 제조 방법, 신틸레이터 패널의 제조 방법, 입체 구조물 및 신틸레이터 패널 |
JPWO2015068686A1 (ja) * | 2013-11-06 | 2017-03-09 | 東レ株式会社 | 立体構造物の製造方法、シンチレータパネルの製造方法、立体構造物及びシンチレータパネル |
KR20160078958A (ko) | 2013-11-06 | 2016-07-05 | 도레이 카부시키가이샤 | 입체 구조물의 제조 방법, 신틸레이터 패널의 제조 방법, 입체 구조물 및 신틸레이터 패널 |
EP3067332A4 (en) * | 2013-11-06 | 2017-05-31 | Toray Industries, Inc. | Method for manufacturing three-dimensional structure, method for manufacturing scintillator panel, three-dimensional structure, and scintillator panel |
US10132937B2 (en) | 2013-11-06 | 2018-11-20 | Toray Industries, Inc. | Method for manufacturing three-dimensional structure, method for manufacturing scintillator panel, three-dimensional structure, and scintillator panel |
TWI639568B (zh) * | 2013-11-06 | 2018-11-01 | 東麗股份有限公司 | 立體結構物之製造方法、閃爍器面板之製造方法、立體結構物及閃爍器面板 |
US10176902B2 (en) * | 2013-11-20 | 2019-01-08 | Toray Industries, Inc. | Scintillator panel |
US20160293285A1 (en) * | 2013-11-20 | 2016-10-06 | Toray Industries, Inc. | Scintillator panel |
CN105723468A (zh) * | 2013-11-20 | 2016-06-29 | 东丽株式会社 | 闪烁体面板 |
CN106663488A (zh) * | 2014-08-08 | 2017-05-10 | 东丽株式会社 | 闪烁体面板和放射线检测器 |
US20170236609A1 (en) * | 2014-08-08 | 2017-08-17 | Toray Industries, Inc. | Scintillator panel and radiation detector |
US20170234993A1 (en) * | 2014-08-08 | 2017-08-17 | Toray Industries, Inc. | Method for manufacturing display member |
KR20170039659A (ko) | 2014-08-08 | 2017-04-11 | 도레이 카부시키가이샤 | 신틸레이터 패널 및 방사선 검출기 |
US10580547B2 (en) | 2014-08-08 | 2020-03-03 | Toray Industries, Inc. | Scintillator panel and radiation detector |
JP2018500549A (ja) * | 2014-11-13 | 2018-01-11 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 最適化された効率を有するピクセル化されたシンチレータ |
JPWO2016143401A1 (ja) * | 2015-03-10 | 2017-11-02 | 株式会社島津製作所 | X線検出器 |
US10295678B2 (en) | 2015-03-10 | 2019-05-21 | Shimadzu Corporation | X-ray detector |
WO2016143401A1 (ja) * | 2015-03-10 | 2016-09-15 | 株式会社島津製作所 | X線検出器 |
KR20180136430A (ko) | 2016-04-27 | 2018-12-24 | 도레이 카부시키가이샤 | 신틸레이터 패널 및 그 제조 방법, 및 방사선 검출 장치 |
US10741298B2 (en) | 2016-04-27 | 2020-08-11 | Toray Industries, Inc. | Scintillator panel and production method for same, and radiation detection apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN103563006B (zh) | 2016-08-24 |
EP2717272A4 (en) | 2015-04-08 |
CN103563006A (zh) | 2014-02-05 |
US9177683B2 (en) | 2015-11-03 |
US20140091235A1 (en) | 2014-04-03 |
EP2717272A1 (en) | 2014-04-09 |
JP5110230B1 (ja) | 2012-12-26 |
EP2717272B1 (en) | 2016-10-05 |
KR20140012728A (ko) | 2014-02-03 |
KR101925823B1 (ko) | 2018-12-06 |
JPWO2012161304A1 (ja) | 2014-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5110230B1 (ja) | シンチレータパネルおよびシンチレータパネルの製造方法 | |
JP6256006B2 (ja) | シンチレータパネルおよびその製造方法 | |
JP6277721B2 (ja) | 放射線検出装置およびその製造方法 | |
JP5704260B2 (ja) | シンチレータパネル | |
JP5488773B1 (ja) | シンチレータパネルおよびシンチレータパネルの製造方法 | |
JP5704258B2 (ja) | シンチレータパネルおよびシンチレータパネルの製造方法 | |
US10176902B2 (en) | Scintillator panel | |
WO2014021415A1 (ja) | シンチレータパネルおよびシンチレータパネルの製造方法 | |
JP6435861B2 (ja) | 立体構造物の製造方法、シンチレータパネルの製造方法及びシンチレータパネル | |
WO2015182524A1 (ja) | シンチレータパネル、放射線画像検出装置およびその製造方法 | |
JP2014106022A (ja) | シンチレータパネル | |
JP6075028B2 (ja) | シンチレータパネル | |
JP6217076B2 (ja) | シンチレータパネルおよびシンチレータパネルの製造方法 | |
JP6003623B2 (ja) | シンチレータパネルおよびシンチレータパネルの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2012525764 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12789890 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20137026957 Country of ref document: KR Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2012789890 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012789890 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14119306 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |