WO2012151830A1 - 进气环、进气组件、工艺腔装置和cvd设备 - Google Patents
进气环、进气组件、工艺腔装置和cvd设备 Download PDFInfo
- Publication number
- WO2012151830A1 WO2012151830A1 PCT/CN2011/079857 CN2011079857W WO2012151830A1 WO 2012151830 A1 WO2012151830 A1 WO 2012151830A1 CN 2011079857 W CN2011079857 W CN 2011079857W WO 2012151830 A1 WO2012151830 A1 WO 2012151830A1
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- WIPO (PCT)
- Prior art keywords
- intake
- ring
- ring body
- holes
- rings
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
Definitions
- the present invention relates to an intake ring, an intake assembly having the intake ring, a process chamber device having the intake assembly, and a chemical vapor deposition apparatus having the process chamber device.
- Chemical vapor deposition (CVD) equipment is a key component in the production of LED (light-emitting diode) epitaxial wafers.
- the principle of the CVD apparatus is that a high-temperature chemical reaction occurs when the process gas passes through the surface of the substrate sheet at a high temperature, and a film is deposited on the surface of the substrate sheet.
- various films can be deposited on the LED substrate using CVD equipment, including multiple quantum well structures that determine the luminescent properties of the LED chip. In the process of depositing multiple quantum wells, it is generally desirable to use multiple process gases simultaneously.
- FIG. 6 shows a process chamber structure of a conventional MOCVD apparatus in which a multi-layer tray 200' is disposed in an up-and-down direction, and a plurality of substrate sheets can be placed on each tray, and a plurality of trays can be rotated together by a rotating mechanism Rotate.
- the air intake assembly 100' is installed at the center of the process chamber, corresponding to each layer of the tray.
- the side of the air intake assembly 100' has an air outlet opening in the up and down direction, and the process gas is mixed outside the process chamber and then passed through the air intake assembly 100'. They are supplied together into the process chamber.
- the process gases are mixed before entering the interior of the process chamber, it is easy to cause a pre-reaction between the process gases, consuming a part of the expensive process gas.
- the flow rate and pressure between the trays 200' of the multi-layer tray 200' cannot be adjusted, so that it is difficult to achieve the uniformity of the process gas flow rate of each tray 200'. This results in variations in the performance of the substrate sheet between the various layers of trays 200'.
- the mixed process gas is introduced into the gap between the trays 200' of each layer, it will contact the lower surface of the high-temperature multi-layer tray 200' to undergo a high-temperature chemical reaction, which not only consumes expensive process gas, but also is in the tray.
- a film is deposited on the lower surface of the 200', and even particles are formed to contaminate the upper surface of the substrate sheet on the lower side thereof, and by-products formed by the pre-reaction between the process gases It will deposit inside the gas pipeline, causing clogging inside the pipeline and unstable process gas supply in severe cases. Further, the above-mentioned existing air intake system is an integral structure, which is inconvenient to clean and maintain. Summary of the invention
- the present invention aims to solve at least one of the above technical problems.
- an object of the present invention is to provide an intake ring which is simple in structure, convenient in processing, low in cost, and capable of achieving uniform distribution of gas.
- Another object of the present invention is to provide an air intake assembly having the above-mentioned intake ring, which has high air intake and stability, and can be controlled in layers by an intake air flow and pressure, and is simple to manufacture. Easy to disassemble.
- a further object of the present invention is to provide a chemical vapor deposition apparatus having the above-described process chamber apparatus.
- An intake ring includes: a ring body, wherein the ring body is respectively provided with an air outlet groove, a flow distribution groove, a plurality of air supply holes, and a plurality of introduction channels, wherein the air outlet groove a circumferential direction of the ring body is formed on an outer circumferential surface of the ring body, and the flow equalization groove is formed on a lower surface of the ring body along a circumferential direction of the ring body and communicates with the air outlet groove,
- the air supply hole penetrates the ring body in a thickness direction of the ring body, the air supply hole is located inside the flow sharing groove in a radial direction of the ring body, and the introduction passage is formed along a radial direction of the ring body At least one of the air supply holes is communicated with the current sharing groove on a lower surface of the ring body and each of the introduction channels.
- the intake ring according to the embodiment of the present invention has a simple structure, is easy to process, has low cost, and can achieve uniform gas distribution.
- the intake ring may further have the following additional technical features:
- the ring body is further provided with a plurality of vent holes distributed along the circumferential direction of the ring body.
- the plurality of vent holes extend in a thickness direction of the ring body to make the current sharing groove
- the air outlet is communicated through the plurality of vent holes.
- the plurality of introduction channels are evenly distributed along the circumferential direction of the ring body.
- the equalizing groove is adjacent to an outer circumference of the ring body and the air supply hole is adjacent to an inner circumference of the ring body.
- the air supply holes are evenly distributed in the circumferential direction.
- the ring body is further provided with a plurality of air venting holes respectively corresponding to the plurality of air supply holes to respectively respectively connect the plurality of air supply holes and the ring body The center hole is connected.
- the bleed hole is a groove formed on a lower surface of the ring body and extending in a radial direction of the ring body.
- the ring body is further provided with a plurality of connecting holes, and the connecting holes penetrate the ring body in the thickness direction of the ring body.
- the connecting hole is a threaded hole.
- connection hole includes a first connection hole and a second connection hole
- the second connection hole is a countersunk threaded hole
- the first connection hole and the second connection hole are along The circumferential direction of the rings is alternately arranged.
- the ring body is further provided with a plurality of cooling through holes, and the cooling through holes penetrate the ring body in the thickness direction of the ring body.
- a seal groove for accommodating a seal ring is provided around each of the cooling through holes on at least one of an upper surface and a lower surface of the ring body.
- an intake assembly includes: a plurality of intake rings, each of which is an intake ring according to any of the above embodiments, At least a part of the connection holes of the intake rings are stacked together in the up and down direction, the plurality of air supply holes of the plurality of intake rings are respectively aligned in the up and down direction, and the said on the adjacent intake rings
- the introduction channels are offset from each other in the circumferential direction of the intake ring; and a plurality of air supply pipes, the plurality of air supply pipes are respectively inserted from below Into the aligned air supply holes, each air supply pipe is provided with an air outlet and the air outlet penetrates the wall of the air supply pipe in a radial direction, and the air outlets of the plurality of air supply pipes are respectively associated with the plurality of air supply pipes
- the current sharing grooves of the intake ring correspond to each other.
- the intake assembly according to the above embodiment of the present invention may further have the following additional technical features:
- the air intake assembly further includes a plurality of connectors, wherein the plurality of connectors are respectively fitted into the aligned connection holes of the adjacent two intake rings to connect the adjacent two intake rings.
- the connecting hole includes a first connecting hole and a second connecting hole
- the second connecting hole is a countersunk threaded hole
- the first connecting hole and the second connecting hole are alternated along a circumferential direction of the ring body
- the intake ring is provided with a plurality of cooling through holes, at least a part of the plurality of cooling through holes of the plurality of intake rings are aligned in the vertical direction.
- each of the gas supply pipes can be closed.
- the air intake assembly further includes: an upper seal, the upper seal being disposed on an upper surface of the uppermost intake ring; and a lower seal, the lower seal It is placed on the lower surface of the lowermost intake ring.
- a process chamber apparatus includes: a chamber body having a process chamber defined therein and the chamber body having an exhaust port; The plurality of trays are disposed in the process chamber at a distance from each other in the up and down direction; and an air intake assembly, wherein the air intake assembly is the air intake assembly of any of the above embodiments, and the air intake assembly is disposed at the The lower end of the plurality of gas supply tubes in the process chamber and the inlet assembly extends out of the process chamber.
- a process chamber device in accordance with the above described embodiments of the present invention is included.
- FIG. 1 is a perspective view of an intake assembly in accordance with one embodiment of the present invention.
- Figure 2a is a front elevational view of an intake ring in accordance with one embodiment of the present invention.
- Figure 2b is a side view of the intake ring of Figure 2a;
- Figure 2c is a rear elevational view of the intake ring of Figure 2a;
- FIG. 3 is a schematic cross-sectional view of an air intake assembly in accordance with one embodiment of the present invention.
- Figure 4 is a partially enlarged schematic view showing a portion of the air intake assembly shown in Figure 3;
- Figure 5 is a partially enlarged schematic view showing another portion of the air intake assembly shown in Figure 3;
- Figure 6 is a schematic illustration of a process chamber apparatus of a prior art CVD apparatus. detailed description
- installation In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixedly connected, integrally connected, for example, unless otherwise specifically defined and defined. It may be a detachable connection; it may also be a communication inside the two components; it may be directly connected or indirectly connected through an intermediate medium, and those skilled in the art may understand the above terms in the present invention according to specific circumstances. The specific meaning.
- an air intake assembly 100 and an intake ring 10 for supplying a gas to a process chamber device are provided as an example.
- the process chamber device is provided with three layers of trays for carrying substrates, and is required for each tray.
- the upper substrate provides three process gases. It is to be understood that the invention is not limited thereto.
- an intake assembly 100 according to an embodiment of the present invention includes a plurality of intake rings 10 and a plurality of air supply pipes 30.
- the intake ring 10 includes a ring body 101.
- the ring body 101 is provided with an air outlet groove 1011, a flow dividing groove 1012, a plurality of air supply holes 1013, and a plurality of introduction passages 1018, respectively.
- the air outlet groove 1011 is formed on the outer circumferential surface of the ring body 101 in the circumferential direction of the ring body 101.
- a flow equalizing groove 1012 is formed on the lower surface of the ring body 101 in the circumferential direction of the ring body 101 and communicates with the air outlet groove 1011.
- the air supply hole 1013 penetrates the ring body 101 in the thickness direction of the ring body 101, and the air supply hole 1013 is located inside the equalizing groove 1012 in the radial direction.
- the introduction passages 1018 are formed on the lower surface of the ring body 101 in the radial direction of the ring body 101 and each of the introduction passages 1018 communicates one air supply hole 1013 with the flow equalization groove 1012.
- each of the introduction channels 1018 may also connect two or more air supply holes 1013 with the same current sharing groove 1012.
- the two or more The air supply hole 1013 has a feature that the two or more air supply holes 1013 are located on one surface of the same ring body 101, and these air supply holes 1013 are preferably adjacent to each other.
- the situation is particularly applicable to the case where the air supply holes 1013 on the ring body 101 are equal in size, and the process amount of one of the plurality of gases is greater than the process amount of the other gases, Two or more air supply holes 1013 are supplied to supply the one gas.
- a cooling through hole 1016 for providing a cooling medium is provided on the ring body 101, and the cooling through hole 1016 penetrates the ring body 101 in the thickness direction of the ring body 101.
- the ring body 101 is further provided with a plurality of intake rings 10 connected together.
- the hole 1015 is connected, and the connection of the plurality of intake rings 10 is realized by means of a connecting member such as a bolt or the like.
- a connecting member such as a bolt or the like.
- the connection of the plurality of intake rings 10 is realized, and the adjacent intake rings 10 can also be joined together by welding to realize assembly of the intake assembly 100 and the like.
- air supply holes 1013 are shown in the figure, in practical applications, the number of air supply holes 1013 is not limited thereto, and the specific number thereof may be determined according to the type of process gas used, and the graphite tray. Set by the number of layers, etc.
- the intake assembly 100 has a plurality of intake rings 10 described with reference to the above embodiments, and a plurality of intake rings 10 are stacked together in the up and down direction.
- the intake ring 10 is an intake ring provided by a preferred embodiment of the present invention, that is, the intake ring 10 used in the preferred embodiment has a connecting hole 1015 formed in the ring body 101 and The through hole 1016 is cooled. It can be understood that, corresponding to the connecting hole 1015 of the intake ring 10, the air intake assembly 100 provided in this embodiment further has a plurality of connecting members 20 for realizing the connection of the plurality of intake rings 10.
- the plurality of air supply holes 1013 of the plurality of intake rings 10 are respectively aligned in the up and down direction; the plurality of cooling through holes 1016 of the plurality of intake rings 10 are respectively aligned in the up and down direction.
- the plurality of connection holes 1015 of the adjacent two intake rings 10 are respectively aligned in the up and down direction.
- the introduction channels 1018 on the adjacent intake rings 10 are offset from each other in the circumferential direction of the intake ring 10 to further prevent premature mixing of various process gases, and further improve the uniformity of various process gases in the process chamber. Sex.
- a plurality of connecting members 20 are respectively fitted into the connecting holes 1015 respectively aligned with the adjacent two intake rings 10 to realize the connection of the adjacent two intake rings 10, and by means of the plurality of intake rings 10
- the two inlets of the intake rings 10 are connected to each other to achieve the connection of the plurality of intake rings 10.
- a plurality of air supply pipes 30 are respectively inserted into the aligned plurality of air supply holes 1013 from below, and an air outlet 301 is disposed on the pipe wall of each air supply pipe 30 and the air outlet 301 penetrates in the radial direction.
- the wall of the air supply pipe 30 is connected to the inside and outside of the air supply pipe 30 via the air outlet 301.
- the air outlets 301 of the plurality of air supply pipes 30 respectively correspond to the corresponding equalizing grooves 1012 of the plurality of intake rings 10.
- an air intake assembly 100 for providing a process gas for a process chamber device is provided as an example.
- the process chamber device is provided with three layers of trays for carrying substrates, and needs to be lining on each layer of trays. Three process gases are available at the bottom.
- the present invention is not limited thereto, and those skilled in the art can understand that the number of intake rings 10 and the supply on each intake ring 10 can be changed as needed within the scope of the present invention.
- the intake assembly 100 of the present embodiment includes three intake rings 10 (hereinafter referred to as first to third intake rings, respectively), and each intake ring 10 has three introduction passages 1018 and 27 air supply holes 1013. Three cooling through holes 1016 and six connecting holes 1015.
- the first and second intake rings 10 are stacked in the up and down direction, and the air supply holes 1013 of the first and second intake rings 10 are respectively aligned in the up and down direction, and the first and second are confirmed.
- the introduction passages 1018 of the intake ring 10 are staggered from each other in the circumferential direction of the intake ring 10. Further, with respect to the intake ring 10 of the above preferred embodiment, at least a part of all the connection holes 1015 of the first and second intake rings 10 are also aligned in the up and down direction while also ensuring the first and second intake rings. 10 multiple cooling
- the through holes 1016 are respectively aligned in the up and down direction.
- first and second intake rings 10 are joined.
- the first and second intake rings 10 are connected by a connecting member 20.
- the third intake ring 10 is stacked on the upper surface of the upper first intake ring 10 or below the second intake ring 10, and the plurality of air supply holes 1013 of the third intake ring 10 are provided.
- the plurality of air supply holes 1013 of the intake ring 10 adjacent to the third intake ring 10 in the first and second intake rings 10 are aligned in the up and down direction while confirming the introduction passage 1018 of the third intake ring 10.
- the introduction passage 1018 of the intake ring 10 adjacent thereto is shifted in the circumferential direction of the intake ring 10.
- the intake ring 10 of the above preferred embodiment it is also necessary to make the plurality of cooling through holes 1016 of the third intake ring 10 and the plurality of cooling through holes 1016 of the first and second intake rings 10 in the up and down direction. Aligning, and connecting the connecting hole 1015 of the third intake ring 10 with the connecting hole 1015 of the first and second intake rings 10 adjacent to the third intake ring 10 in the up and down direction Aligning and inserting the connector 20 into the aligned connecting hole 1015 to connect the third intake ring 10 to the one of the first and second intake rings 10 adjacent to the third intake ring 10 10 on.
- a predetermined number of intake rings 10 may be connected by repeating the above operation.
- the air supply pipes 30 are respectively inserted into the plurality of air supply holes 1013 aligned in the up and down direction, and the air outlets 301 of the plurality of air supply pipes 30 are respectively associated with the equalizing grooves 1012 of the plurality of intake rings 10.
- the number of the supply pipes 30 is It is 9.
- the three process gases required for the substrate can be provided by the first to third gas supply rings 10, respectively, and each process gas passes through three gas supply pipes. 30 is further supplied to the substrate after being equalized in the equalizing grooves 1012 via the three introduction passages 1018 communicating therewith.
- the assembly in order to ensure that the inserted air supply pipe 30 is provided for each layer separately for the process gas, it is necessary to align at least a part of the plurality of air supply holes 1013 in the up and down direction, that is, the portion of the air supply holes 10 to be inserted into the air supply pipe 30 in each of the intake rings 10 must be aligned in the up and down direction.
- the number of specific supply holes 1013 to be aligned may be determined according to the number of types of gas to be supplied.
- each intake ring 10 in order to be able to cool the respective intake rings 10 by the cooling medium during use, it may be according to the needs of the specific application and each intake ring 10
- the number of cooling through holes 1016 is such that at least a part of the plurality of cooling through holes 1016 are aligned in the up and down direction.
- the plurality of connection holes 1015 of the plurality of intake rings 10 since the intake assembly 100 can be assembled in a layer-by-layer assembly manner, only at least a part of the plurality of connection holes 1015 of the adjacent two intake rings 10 are provided. Just align in the up and down direction.
- the assembly of the intake unit 100 is described above by way of a layer-by-layer assembly, but the present invention is not limited thereto.
- the assembly of the intake assembly 100 is accomplished by a plurality of attachment holes 1015, thereby joining the plurality of intake rings 10 together.
- the intake ring 10 has not only the advantages of simple structure, convenient processing, low cost, but also uniform distribution of gas.
- various process gases need not be premixed before entering the process chamber, but may enter the equalization tank 1012 through the respective dedicated air supply holes 1013 and through the introduction passage 1018.
- the flow cell 1012 is homogenized and then supplied to the process chamber through the gas outlet 1011.
- the equalizing groove 1012 does not need to directly communicate with the air supply hole 1013 in the radial direction, thereby not only improving the strength of the intake ring 10, but also shortening the indwelling time of various process gases in the equalizing groove 1012, thereby It will help to further solve the adverse effects caused by the pre-reaction of process gases.
- the number of the intake rings 10 can be easily changed according to the structure of the process chamber using the intake assembly 100, so that the applicability is good, and a standardized design can also be performed.
- At least two adjacent intake rings 10 can be conveniently mounted and detached by the connecting member 20, thereby being easy to clean and maintain, and the intake assembly provided by the embodiment is compared to the snap-fit structure.
- the structure of 100 is more tight and stronger.
- the intake ring 10 is formed with the air outlet groove 1011 on the outer circumferential surface of the ring body 101 and in the circumferential direction of the ring body 101, which is not only easier to process, but also compared with the prior art. It also makes the flow of gas supplied to the process chamber more uniform.
- each gas for each layer of the tray has a dedicated air supply hole 1013, so that it is convenient to independently adjust the flow rate and pressure of the gas between the layers of the trays, thereby It is advantageous to improve the uniformity of the substrate sheets processed between the layers of the trays.
- the ring body 101 may further be provided with a plurality of vent holes 1017 uniformly distributed along the circumferential direction of the ring body 101, and the vent holes 1017 extend in the thickness direction of the ring body 101 to make the flow sharing groove 1012.
- the plurality of vent holes 1017 communicate with the air outlet 1011.
- the process gas flowing out from the air supply hole 1013 flows into the equalizing groove 1012 which communicates with the air supply hole 1013, and thereafter changes direction and is released from the vent hole 1017 to the air outlet groove 1011, and is supplied to each layer of the tray. Substrate.
- the intake assembly 100 provided by the embodiment of the present invention changes the direction of the air flow by the manner described above, and is more advantageous for improving gas uniformity and stability than introducing the gas linearly into the process chamber.
- a plurality of (three in the present embodiment) introduction channels 1018 extend in the radial direction of the ring body 101 and are uniformly distributed along the circumferential direction of the ring body 101. .
- the equalizing groove 1012 is formed adjacent to the outer peripheral edge of the ring body 101, and the air supply hole 1013 is formed adjacent to the inner peripheral edge of the ring body 101. Thereby, the indwelling time of the various process gases in the equalizing tank 1012 can be further shortened.
- the process gas can be further improved. Body uniformity.
- connecting hole 1015 and the cooling through hole 1016 may be located between the equalizing groove 1012 and the air supply hole 1013 in the radial direction.
- the connecting hole 1015 may be a threaded hole.
- the connecting hole 1015 includes a first connecting hole 1015a and a second connecting hole 1015b, wherein the second connecting hole 1015b is a countersunk threaded hole, and the first connecting hole 1015a and the second connecting hole 1015b are along the circumference of the ring body 101 Alternate distribution.
- the second connecting hole 1015b in FIGS. 1 to 5 is a countersunk threaded hole formed on the upper surface of the intake ring 10, and at this time, the second connecting hole 1015b of the upper intake ring 10 is located. It is aligned with the first connection hole 1015a of the intake ring 10 located below.
- the second connecting hole 1015b may also be a countersunk threaded hole formed on the lower surface of the intake ring 10, in this case, as long as the second connecting hole 1015b of the intake ring 10 located below is located.
- the first connection holes 1015a of the upper intake ring 10 are aligned, and the adjacent two intake rings 10 are joined together from the bottom to the top through a joint 20 such as a bolt or the like.
- the ring body 101 may further be provided with a plurality of air venting holes 1019 corresponding to the plurality of air supply holes 1013 to respectively connect the plurality of air supply holes 1013 with the center holes of the ring body 101.
- the vent hole 1019 may be a groove formed on the lower surface of the ring body 101 and extending in the radial direction.
- cooling through hole 1016 is provided in the ring body 101
- 1016 is provided with a sealing groove 1016A for accommodating a sealing ring, respectively.
- a seal ring is provided in the seal groove 1016A to seal the cooling through hole 1016.
- the upper ends of the plurality of air supply pipes 30 may be closed. Thereby, it is possible to prevent the process gas from overflowing through the upper end of the gas supply pipe 30.
- the intake assembly 100 may further include an upper seal (not shown) disposed on the upper surface of the uppermost intake ring 10 and a lower seal disposed on the lower surface of the lowermost intake ring 10 ( Not shown).
- a process chamber device includes: a chamber body, the chamber body defines a process chamber and the chamber body has an exhaust port; and a plurality of trays, the plurality of trays are spaced apart in the up and down direction a distance disposed within the process chamber; and an intake assembly, which may be an intake assembly 100 described in accordance with any of the above-described embodiments of the present invention, the intake assembly 100 being disposed within the process chamber and The lower ends of the plurality of air supply tubes 30 of the air intake assembly 100 extend out of the process chamber.
- the structure and function of other parts of the process chamber apparatus are known to those of ordinary skill in the art and will not be described again. Cavity device.
- the process chamber device and the chemical vapor deposition apparatus can significantly improve the uniformity and stability of the process gas in the process chamber.
- the process gas is not pre-mixed prior to introduction into the process chamber, which not only avoids waste of process gases due to pre-reactions caused by gas premixing, but also avoids gas blockage due to by-products of pre-reaction and Problems such as unstable process gas supply.
- the process chamber device and the chemical vapor deposition device according to the embodiments of the present invention can separately control the flow rate and pressure of each layer of gas, and significantly improve the uniformity and stability of the process gas in the process chamber, thereby improving the substrate processing result. And its performance and consistency.
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Description
进气环、 进气组件、 工艺腔装置和 CVD设备 技术领域
本发明涉及一种进气环、 具有该进气环的进气组件、 具有该进气组件的 工艺腔装置和具有所述工艺腔装置的化学气相沉积设备。 背景技术
化学气相沉积( CVD )设备是生产 LED (发光二极管)外延片的关键设 备。 CVD设备的原理是, 工艺气体通过高温的衬底片表面时发生高温化学反 应, 并在衬底片的表面沉积薄膜。 通过调整工艺气体和工艺温度, 利用 CVD 设备可以在 LED衬底片上沉积各种薄膜, 包括决定 LED芯片发光性能的多 量子阱结构。 在沉积多量子阱的工艺过程中, 一般需要同时使用多种工艺气 体。
图 6示出了一种现有的 MOCVD设备的工艺腔结构,其中沿上下方向设 置了多层托盘 200' , 每个托盘的上面可以摆放多片衬底片, 多个托盘可以通 过旋转机构一起旋转。 进气组件 100'被安装在工艺腔的中心, 对应于每层托 盘, 进气组件 100'的侧面沿上下方向上开有出气孔, 工艺气体在工艺腔外部 混合后通过进气组件 100'被一起供入工艺腔内。
然而, 由于工艺气体在进入工艺腔内部之前混合, 容易造成工艺气体之 间的预反应, 消耗部分昂贵的工艺气体。 此外, 根据现有的进气组件 100' , 不能调节多层托盘 200'中各层托盘 200'之间的流量、 压力, 因此很难实现每 层托盘 200'的工艺气体流量的均勾性, 从而造成各层托盘 200'之间的衬底片 性能上的变动。 混合的工艺气体被导入各层托盘 200'之间的间隙后, 会接触 到高温的多层托盘 200'的下表面而发生高温化学反应, 这不仅会消耗昂贵的 工艺气体, 而且还会在托盘 200'的下表面沉积薄膜, 甚至会形成颗粒进而污 染位于其下侧的衬底片的上表面, 而且工艺气体之间的预反应生成的副产物
会在气体管道内部沉积, 严重的时候会引发管道内部的堵塞以及工艺气体供 应不稳定的问题。 进一步, 上述现有进气系统为一体结构, 不便于清洗和维 护。 发明内容
本发明旨在至少解决上述技术问题之一。
为此, 本发明的一个目的在于提出进气环, 该进气环结构简单、 加工方 便、 成本低、 可以实现气体的均匀分配。
本发明的另一目的在于提出一种具有上述进气环的进气组件, 该进气组 件的进气均勾性和稳定性较高、进气流量和压力可以分层控制,且制造简单、 便于拆卸。
本发明的又一目的在于提出一种具有上述进气组件的工艺腔装置。
本发明的再一目的在于提出一种具有上述工艺腔装置的化学气相沉积 设备。
根据本发明第一方面的实施例的进气环, 包括: 环体, 所述环体分别设 有出气槽、 均流槽、 多个供气孔和多个导入通道, 其中所述出气槽沿所述环 体的周向形成在所述环体的外周面上, 所述均流槽沿所述环体的周向形成在 所述环体的下表面上且与所述出气槽连通, 所述供气孔沿所述环体的厚度方 向贯穿所述环体, 所述供气孔在所述环体的径向上位于所述均流槽的内侧, 所述导入通道沿所述环体的径向形成在所述环体的下表面上且每个所述导入 通道将至少一个所述供气孔与所述均流槽连通。
根据本发明实施例的进气环, 结构简单、 加工方便、 成本低, 并且可以 实现气体的均匀分配。
另外,根据本发明上述实施例的进气环,还可以具有以下附加技术特征: 根据本发明的一个实施例, 所述环体还设有沿所述环体的周向均勾分布 的多个通气孔, 所述多个通气孔沿所述环体的厚度方向延伸以使所述均流槽
通过所述多个通气孔与所述出气槽连通。
根据本发明的一个实施例, 所述多个导入通道沿所述环体的周向均匀分 布。
根据本发明的一个实施例, 所述均流槽邻近所述环体的外周沿且所述供 气孔邻近所述环体的内周沿。
根据本发明的一个实施例, 所述供气孔沿周向均匀分布。
根据本发明的一个实施例, 所述环体还设有多个泄气孔, 所述多个泄气 孔分别与所述多个供气孔对应以分别将所述多个供气孔与所述环体的中心孔 连通。
根据本发明的一个实施例, 所述泄气孔为形成在所述环体的下表面上且 沿所述环体的径向延伸的凹槽。
根据本发明的一个实施例, 所述环体还设有多个连接孔, 所述连接孔沿 所述环体的厚度方向贯穿所述环体。
根据本发明的一个实施例, 所述连接孔为螺紋孔。
根据本发明的一个实施例, 所述连接孔包括第一连接孔和第二连接孔, 所述第二连接孔为沉头螺紋孔, 且所述第一连接孔和第二连接孔沿所述环体 的周向交替布置。
根据本发明的一个实施例, 所述环体还设有多个冷却通孔, 所述冷却通 孔沿所述环体的厚度方向贯穿所述环体。
根据本发明的一个实施例, 在所述环体的上表面和下表面至少之一上绕 每个所述冷却通孔分别设有用于容纳密封圈的密封槽。
为了达到上述目的, 根据本发明第二方面的实施例的进气组件, 包括: 多个进气环, 每个所述进气环为上述任一实施例所述的进气环, 所述多个进 气环中的至少一部分连接孔在上下方向上叠置在一起, 所述多个进气环的所 述多个供气孔在上下方向上分别对齐, 且相邻进气环上的所述导入通道在所 述进气环的周向上彼此错开; 和多个供气管, 所述多个供气管分别从下面插
入到所述对齐的供气孔内, 每个供气管上设有出气口且所述出气口沿径向贯 穿供气管的壁, 所述多个供气管的所述出气口分别与所述多个进气环的所述 均流槽对应。
另外, 根据本发明上述实施例的进气组件, 还可以具有以下附加技术特 征:
在所述进气环设有多个连接孔的情况下, 所述多个进气环中相邻两个进 气环的所述多个连接孔的至少一部分连接孔在上下方向上分别对齐, 所述进 气组件还包括多个连接件, 其中所述多个连接件分别配合到相邻两个进气环 的所述对齐的连接孔内以连接该相邻的两个进气环。
进一步, 在所述连接孔包括第一连接孔和第二连接孔、 所述第二连接孔 为沉头螺紋孔且所述第一连接孔和第二连接孔沿所述环体的周向交替布置的 情况下, 在相邻两个所述进气环中, 其中一个所述进气环的所述第一连接孔 与另一个所述进气环的所述第二连接孔对齐, 且所述连接件为螺栓。
在所述进气环设有多个冷却通孔的情况下, 所述多个进气环的所述多个 冷却通孔中的至少一部分冷却通孔在上下方向上分别对齐。
其中, 每个所述供气管的上端可以封闭。
另外, 根据本发明的一个实施例, 所述进气组件还包括: 上密封件, 所 述上密封件设置在最上面的进气环的上表面上; 和下密封件, 所述下密封件 设置在最下面的进气环的下表面上。
为了达到上述目的, 根据本发明第三方面实施例的工艺腔装置, 包括: 腔室本体, 所述腔室本体内限定有工艺腔且所述腔室本体具有排气口; 多个 托盘, 所述多个托盘沿上下方向间隔一定距离地布置在所述工艺腔内; 和进 气组件, 所述进气组件为上述任一实施例所述的进气组件, 所述进气组件设 置在所述工艺腔内且所述进气组件的所述多个供气管的下端延伸出所述工艺 腔。
为了达到上述目的, 根据本发明第四方面实施例的化学气相沉积设备,
包括根据本发明上述实施例的工艺腔装置。
本发明的附加方面和优点将在下面的描述中部分给出, 部分将从下面的 描述中变得明显, 或通过本发明的实践了解到。 附图说明
本发明的上述和 /或附加的方面和优点从结合下面附图对实施例的描述 中将变得明显和容易理解, 其中:
图 1是根据本发明一个实施例的进气组件的立体示意图;
图 2a是根据本发明一个实施例的进气环的主视图;
图 2b是图 2a所示进气环的侧视图;
图 2c是图 2a所示进气环的后视图;
图 3是根据本发明一个实施例的进气组件的剖视示意图;
图 4是图 3所示进气组件的一部分的局部放大示意图;
图 5是图 3所示进气组件的另一部分的局部放大示意图; 和
图 6是现有 CVD设备的工艺腔装置的示意图。 具体实施方式
下面详细描述本发明的实施例, 所述实施例的示例在附图中示出, 其中 自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的 元件。 下面通过参考附图描述的实施例是示例性的, 仅用于解释本发明, 而 不能理解为对本发明的限制。
在本发明的描述中, 需要理解的是, 术语"中心"、 "纵向"、 "横向"、 "上"、 "下"、 "前"、 "后"、 "左"、 "右"、 "竖直"、 "水平"、 "顶"、 "底"、 "内"、 "外"等指示 的方位或位置关系为基于附图所示的方位或位置关系, 仅是为了便于描述本 发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、 以特定的方位构造和操作, 因此不能理解为对本发明的限制。 此外, 术语"多
个"应理解为至少两个。
在本发明的描述中, 需要说明的是, 除非另有明确的规定和限定, 术语 "安装"、 "相连"、 "连接 "应做广义理解, 例如, 可以是固定连接, 一体地连接, 也可以是可拆卸连接; 也可以是两个元件内部的连通; 可以是直接相连, 也 可以通过中间媒介间接相连, 对于本领域的普通技术人员而言, 可以根据具 体情况理解上述术语在本发明中的具体含义。
下面, 首先参考附图 1〜图 5描述本发明实施例的进气环 10和进气组件
100。
在下面的实施例中, 以为工艺腔装置提供气体的进气组件 100和进气环 10为例进行说明, 该工艺腔装置设置有 3层用于承载衬底的托盘, 且需要为 每层托盘上的衬底提供 3种工艺气体。 需要理解的是, 本发明并不限于此。 如图 1所示, 根据本发明实施例的进气组件 100包括多个进气环 10、 多个供 气管 30。
首先, 描述本发明实施例的进气组件 100的进气环 10。
如图 2a〜图 2c所示, 进气环 10包括环体 101 , 在环体 101上分别设有 出气槽 1011、 均流槽 1012、 多个供气孔 1013和多个导入通道 1018。
具体而言,如图 2b所示,出气槽 1011沿环体 101的周向形成在环体 101 的外周面上。 如图 2c和图 3所示, 均流槽 1012沿环体 101的周向形成在环 体 101的下表面上且与出气槽 1011连通。 供气孔 1013沿环体 101的厚度方 向贯穿环体 101 , 供气孔 1013在径向上位于均流槽 1012的内侧。 导入通道 1018沿环体 101的径向形成在环体 101的下表面上且每个导入通道 1018将 一个供气孔 1013与均流槽 1012连通。
可以理解的是, 在实际应用中, 每个导入通道 1018也可以将两个或两 个以上的供气孔 1013与同一均流槽 1012连通, 这种情况下, 所述两个或两 个以上的供气孔 1013具有下述特点,即,所述两个或两个以上的供气孔 1013 位于同一个环体 101的一个表面上,且这些供气孔 1013优选彼此相邻。事实
上, 这种情形特别适用于下述情况, 即, 环体 101上的各供气孔 1013大小相 等, 而多种气体中的一种气体的工艺用量大于其它气体的工艺用量时, 就可 以釆用两个或两个以上的供气孔 1013来供应所述这一种气体。
此外, 为了对进气环 10进行冷却, 可选地, 在环体 101上还设有用于 提供冷却介质的冷却通孔 1016, 该冷却通孔 1016沿环体 101的厚度方向贯 穿环体 101。
另外, 为了更便于将进气环 10组装成进气组件 100且使进气组件 100 的结构更稳定、 易拆卸,在环体 101上还设有用于将多个进气环 10连接在一 起的连接孔 1015 , 并借助于诸如螺栓等的连接部件而实现多个进气环 10的 连接。 需要理解的是, 本发明并不限于此, 本领域普通技术人员可以理解, 在不脱离本发明宗旨的范围内,也可以根据需要在进气环 10上设置诸如卡扣 机构等的连接部来实现多个进气环 10的连接,还可以通过焊接方式而将相邻 的进气环 10连接在一起以实现进气组件 100的组装等。需要说明的是, 图中 虽然示出了 27个供气孔 1013 , 但在实际应用中, 供气孔 1013的个数并不限 于此, 其具体个数可以根据所使用的工艺气体种类、 石墨托盘的层数等而设 定。
接下来, 描述本发明实施例的进气组件 100。
进气组件 100具有多个参考上述实施例描述的进气环 10, 多个进气环 10在上下方向上叠置在一起。 以下, 以上述进气环 10为本发明的优选实施 方式提供的进气环, 也就是说, 本优选实施例中所釆用的进气环 10, 其环体 101上设有连接孔 1015以及冷却通孔 1016。 可以理解的是, 对应于进气环 10的连接孔 1015 , 本实施例提供的进气组件 100还具有多个连接件 20, 以 便实现所述多个进气环 10的连接。
其中, 多个进气环 10的多个供气孔 1013在上下方向上分别对齐; 多个 进气环 10的多个冷却通孔 1016在上下方向上分别对齐。 并且, 在所述多个 进气环 10中,相邻两个进气环 10的多个连接孔 1015在上下方向上分别对齐。
同时, 使相邻进气环 10上的导入通道 1018在进气环 10的周向上彼此错开, 以进一步避免多种工艺气体过早地混合, 并进一步提高各种工艺气体在工艺 腔内的均匀性。
多个连接件 20分别配合到相邻两个进气环 10所分别对齐的连接孔 1015 内, 以实现相邻的两个进气环 10的连接, 并借助于所述多个进气环 10中各 进气环 10的两两相连而实现所述多个进气环 10的连接。
在本实施例中, 多个供气管 30分别从下面插入到所述已对齐的多个供 气孔 1013内, 每个供气管 30的管壁上设有出气口 301且出气口 301沿径向 贯穿供气管 30的壁, 以便经由出气口 301而将供气管 30的内外环境连通。 并且,多个供气管 30的出气口 301分别与多个进气环 10中相应的均流槽 1012 对应。
再接下来, 描述本发明上述实施例的进气组件 100的组装。
在下面的实施例中, 以为如下工艺腔装置提供工艺气体的进气组件 100 为例进行说明, 该工艺腔装置设置有 3层用于承载衬底的托盘, 且需要为每 层托盘上的衬底提供 3种工艺气体。 需要理解的是, 本发明并不限于此, 本 领域普通技术人员可以理解, 在不脱离本发明宗旨的范围内可以根据需要改 变进气环 10的个数、每个进气环 10上的供气孔 1013的个数、导入通道 1018 的个数等。
本实施例的进气组件 100包括三个进气环 10(下面分别称为第一至第三 进气环), 且每个进气环 10具有 3个导入通道 1018、 27个供气孔 1013、 3 个冷却通孔 1016以及 6个连接孔 1015。
首先, 将第一和第二进气环 10在上下方向上叠置在一起, 并使第一和 第二进气环 10的供气孔 1013在上下方向上分别对齐, 并确认第一和第二进 气环 10的导入通道 1018在进气环 10的周向上彼此错开。此外,针对上述优 选实施方式的进气环 10,还使第一和第二进气环 10的所有连接孔 1015中的 至少一部分在上下方向上对齐,同时还保证第一和第二进气环 10的多个冷却
通孔 1016在上下方向上分别对齐。
接下来, 将第一和第二进气环 10连接起来。 例如, 针对上述优选实施 方式的进气环 10, 通过连接件 20将第一和第二进气环 10连接起来。
然后, 在处于上面的第一进气环 10的上面或处于下面的第二进气环 10 的下面再叠置第三进气环 10, 并使第三进气环 10的多个供气孔 1013与第一 和第二进气环 10中与第三进气环 10相邻的那个进气环 10的多个供气孔 1013 在上下方向上对齐, 同时确认第三进气环 10的导入通道 1018与其相邻的进 气环 10的导入通道 1018在进气环 10的周向上错开。此外,针对上述优选实 施方式的进气环 10,还需使第三进气环 10的多个冷却通孔 1016与第一和第 二进气环 10的多个冷却通孔 1016在上下方向上对齐, 且使第三进气环 10 的连接孔 1015与第一和第二进气环 10中的与第三进气环 10相邻的那个进气 环 10上的连接孔 1015在上下方向上对齐,并将连接件 20插入对齐的连接孔 1015内, 以将第三进气环 10连接到第一和第二进气环 10中的与第三进气环 10相邻的那个进气环 10上。
可以理解的是, 在需要为每层托盘及其所承载的衬底提供更多种 (多于
3种)工艺气体时, 可以通过重复上述操作将预定个数的进气环 10连接在一 起。
最后, 在上下方向上的分别对齐的多个供气孔 1013 内分别插入供气管 30, 并使多个供气管 30的出气口 301分别与多个进气环 10的均流槽 1012 对应。 在本实施例中, 由于为每层托盘所承载的衬底提供的工艺气体种类为 3种, 并且每个进气环 10上设置的导入通道 1018的数量为 3个, 因此供气 管 30的数量为 9个。 由此, 借助于本实施例提供的进气组件 100, 衬底所需 的 3种工艺气体可以分别由第一至第三供气环 10—一提供 ,且每种工艺气体 通过 3个供气管 30并经由与其连通的 3个导入通道 1018而在均流槽 1012 中均流后再提供给衬底。
需要说明的是, 在组装时, 为了保证插入的供气管 30分别对各层提供
工艺气体,需要使多个供气孔 1013中的至少一部分在上下方向上对齐,也就 是说,必须使各进气环 10上需要插入供气管 30的那一部分供气孔 1013在上 下方向上对齐。在实际应用中,具体所需对齐的供气孔 1013的个数可以根据 所需供应气体的种类数量来确定。
此外, 需要理解的是, 针对上述优选实施方式的进气环 10, 为了在使用 过程中能够通过冷却介质对各个进气环 10进行冷却,可以根据具体应用的需 要以及每个进气环 10中的冷却通孔 1016的个数,使多个冷却通孔 1016中的 至少一部分在上下方向上对齐。 至于多个进气环 10的多个连接孔 1015 , 由 于可以釆用逐层组装的方式组装进气组件 100, 因此只要使相邻两个进气环 10的多个连接孔 1015中的至少一部分在上下方向上分别对齐即可。
另外, 需要说明的是, 以上以逐层组装的方式为例来对进气组件 100的 组装进行描述, 然而本发明并不限于此。 例如, 也可以一次叠置全部的进气 环 10, 并使各进气环 10中的多个连接孔 1015在上下方向上分别对齐, 最后 将相应长度的连接件 20插入到所述已对齐的多个连接孔 1015中, 从而将多 个进气环 10连接在一起而完成进气组件 100的组装。
由上可知, 根据本发明实施例的进气环 10, 不仅具有结构简单、 加工方 便、 成本低等优点, 而且还可以实现气体的均匀分配。
根据本发明上述实施例的进气组件 100, 各种工艺气体无需在进入工艺 腔之前进行预混合, 而是可以通过各自专用的供气孔 1013 并经由导入通道 1018而进入均流槽 1012, 在均流槽 1012中进行均匀化后再通过出气槽 1011 提供到工艺腔内, 这样, 不仅可以避免由于气体预混产生的预反应所导致的 浪费, 而且也可避免由于预反应的副产物所造成的气路堵塞以及工艺气体供 应不稳定等问题。 另外, 均流槽 1012在径向上无需直接与供气孔 1013相连 通, 由此不仅可以提高进气环 10的强度, 而且也可以缩短各种工艺气体在均 流槽 1012内的留置时间,从而有利于进一步解决因工艺气体预反应所带来的 不良影响。
此外, 可以根据使用进气组件 100的工艺腔的结构来方便地改变进气环 10的个数, 因此其适用性好, 并且还可以进行标准化设计。
进而, 至少是相邻的两个进气环 10之间可以通过连接件 20方便地安装 和拆卸, 因此易于清洗和维护, 且相比于卡扣结构而言, 本实施例提供的进 气组件 100的结构更紧固, 强度更高。
而且, 与现有技术中相比, 根据本发明上述实施例的进气环 10是在环 体 101的外周面上且沿环体 101的周向上形成有出气槽 1011 , 这不仅更易于 加工, 而且也使得提供到工艺腔内的气体的气流更均匀。
最后, 使用根据本发明实施例的进气组件 100, 针对每层托盘的每种气 体都具有专用的供气孔 1013 , 因此可以方便独立地调节各层托盘之间的气体 的流量和压力, 从而有利于提高各层托盘间所处理的衬底片的均匀性。
在本发明的一些实施例中, 环体 101还可以设有沿环体 101的周向均匀 分布的多个通气孔 1017 , 通气孔 1017沿环体 101的厚度方向延伸, 以使均 流槽 1012通过该多个通气孔 1017与出气槽 1011连通。 如图 3〜图 5所示, 从供气孔 1013流出的工艺气体流入与供气孔 1013连通的均流槽 1012,此后 改变方向而由通气孔 1017释放至出气槽 1011 , 进而提供给各层托盘上的衬 底。 由此, 相比于把气体直线式地导入工艺腔而言, 本发明实施例提供的进 气组件 100通过如上所述的方式来改变气流方向, 而更有利于提高气体均匀 性和稳定性。
为了进一步提高各种工艺气体在工艺腔内沿周向上的均匀性, 多个(本 实施例中为 3个)导入通道 1018沿环体 101的径向延伸且沿环体 101的周向 均匀分布。
可选地, 均流槽 1012邻近环体 101的外周沿形成, 且供气孔 1013邻近 环体 101的内周沿形成。 由此, 可以进一步缩短各种工艺气体在均流槽 1012 内的留置时间。
当供气孔 1013沿环体 101的周向均匀分布时, 可以进一步提高工艺气
体的均匀性。
此外, 连接孔 1015和冷却通孔 1016在径向上可以位于均流槽 1012与 供气孔 1013之间。
此外, 连接孔 1015可以为螺紋孔。 有利地, 连接孔 1015包括第一连接 孔 1015a和第二连接孔 1015b, 其中第二连接孔 1015b为沉头螺紋孔, 且第 一连接孔 1015a和第二连接孔 1015b沿环体 101的周向交替分布。
相应地, 在组装后的进气组件 100中, 在相邻两个进气环 10中, 其中 的一个进气环 10的第一连接孔 1015a与另一个进气环 10的第二连接孔 1015b 对齐, 且连接件 20为螺栓。 由此, 可以简单地实现多个进气环 10的逐层组 装, 并有利于实现进气组件的标准化。
需要说明的是, 图 1〜图 5中的第二连接孔 1015b为形成在进气环 10的 上表面上的沉头螺紋孔, 此时, 位于上面的进气环 10 的第二连接孔 1015b 与位于下面的进气环 10的第一连接孔 1015a对齐。但可以理解的是, 第二连 接孔 1015b也可以是形成在进气环 10的下表面上的沉头螺紋孔,此时,只要 将位于下面的进气环 10的第二连接孔 1015b与位于上面的进气环 10的第一 连接孔 1015a对齐,并从下向上通过诸如螺栓等的连接件 20将相邻两个进气 环 10连接在一起。
此外, 环体 101还可以设有多个泄气孔 1019, 多个泄气孔 1019分别与 多个供气孔 1013对应,以分别将多个供气孔 1013与环体 101的中心孔连通。 由此, 各层进气环 10之间可能残留的各种气体可以通过多个泄气孔 1019迅 速排出工艺腔。例如, 泄气孔 1019可以为形成在环体 101的下表面上且沿径 向延伸的凹槽。
此外, 在环体 101上设有冷却通孔 1016的情况下, 可选地, 在环体 101 的上表面和下表面至少之一上(图 5 中为上表面上)绕每个冷却通孔 1016 分别设有用于容纳密封圈的密封槽 1016A。 相应地, 在进气组件 100中, 在 密封槽 1016A内设有密封圈以对冷却通孔 1016进行密封。 由此, 可以确保
对冷却介质进行密封以防止其泄漏至工艺腔中, 而且釆用密封圈这样的密封 方式可以便于拆除和清洗。
此外, 多个供气管 30 的上端可以封闭。 由此, 可以避免工艺气体经由 供气管 30的上端溢出。
此外, 进气组件 100还可以包括设置在最上面的进气环 10的上表面上 的上密封件(未图示)和设置在最下面的进气环 10的下表面上的下密封件(未 图示)。
下面, 描述根据本发明实施例的工艺腔装置。
根据本发明实施例的工艺腔装置包括: 腔室本体, 所述腔室本体内限定 有工艺腔且所述腔室本体具有排气口; 多个托盘, 所述多个托盘沿上下方向 间隔一定距离地布置在所述工艺腔内; 和进气组件, 所述进气组件可以为根 据本发明上述任一实施例描述的进气组件 100, 该进气组件 100设置在所述 工艺腔内且进气组件 100的多个供气管 30的下端延伸出所述工艺腔。工艺腔 装置的其他部分的结构和功能对于本领域的普通技术人员是已知的, 在此不 再重复描述。 腔装置。
根据本发明实施例的工艺腔装置和化学气相沉积设备, 可以显著提高工 艺腔内的工艺气体的均匀性和稳定性。 此外, 工艺气体在导入工艺腔之前没 有预混合, 这不仅可以避免由于气体预混产生的预反应所导致的工艺气体的 浪费, 而且也可避免由于预反应的副产物所造成的气路堵塞以及工艺气体供 应不稳定等问题。 此外, 根据本发明实施例的工艺腔装置和化学气相沉积设 备, 可以分别控制各层气体的流量和压力, 显著提高工艺腔内的工艺气体的 均匀性和稳定性, 由此提高衬底加工结果及其性能的均勾性和稳定性。
在本说明书的描述中, 参考术语"一个实施例"、 "一些实施例"、 "示例"、
"具体示例"、 或"一些示例"等的描述意指结合该实施例或示例描述的具体特
征、 结构、 材料或者特点包含于本发明的至少一个实施例或示例中。 在本说 明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且, 描述的具体特征、 结构、 材料或者特点可以在任何的一个或多个实施例或示 例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例, 本领域的普通技术人员可以理 解:在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、 修改、 替换和变型, 本发明的范围由权利要求及其等同物限定。
Claims
1、 一种进气环, 其特征在于, 包括环体, 所述环体分别设有出气槽、 均流槽、 多个供气孔和多个导入通道, 其中,
所述出气槽沿所述环体的周向形成在所述环体的外周面上;
所述均流槽沿所述环体的周向形成在所述环体的下表面上且与所述出 气槽连通;
所述供气孔沿所述环体的厚度方向贯穿所述环体, 所述供气孔在所述环 体的径向上位于所述均流槽的内侧;
所述导入通道沿所述环体的径向形成在所述环体的下表面上, 且每个所 述导入通道将至少一个所述供气孔与所述均流槽连通。
2、 根据权利要求 1 所述的进气环, 其特征在于, 所述环体还设有沿所 述环体的周向均勾分布的多个通气孔, 所述多个通气孔沿所述环体的厚度方 向延伸以使所述均流槽通过所述多个通气孔与所述出气槽连通。
3、 根据权利要求 1 所述的进气环, 其特征在于, 所述多个导入通道沿 所述环体的周向均勾分布。
4、 根据权利要求 1 所述的进气环, 其特征在于, 所述均流槽邻近所述 环体的外周沿, 且所述供气孔邻近所述环体的内周沿。
5、 根据权利要求 1 所述的进气环, 其特征在于, 所述供气孔沿周向均 匀分布。
6、根据权利要求 1-5中任一项所述的进气环, 其特征在于, 所述环体还 设有多个泄气孔, 所述多个泄气孔分别与所述多个供气孔对应, 以分别将所 述多个供气孔与所述环体的中心孔连通。
7、 根据权利要求 6所述的进气环, 其特征在于, 所述泄气孔为形成在 所述环体的下表面上且沿所述环体的径向延伸的凹槽。
8、 根据权利要求 1 所述的进气环, 其特征在于, 所述环体还设有多个 连接孔, 所述连接孔沿所述环体的厚度方向贯穿所述环体。
9、 根据权利要求 8所述的进气环, 其特征在于, 所述连接孔为螺紋孔。
10、 根据权利要求 9所述的进气环, 其特征在于, 所述连接孔包括第一 连接孔和第二连接孔, 所述第二连接孔为沉头螺紋孔, 且所述第一连接孔和 第二连接孔沿所述环体的周向交替布置。
11、 根据权利要求 1所述的进气环, 其特征在于, 所述环体还设有多个 冷却通孔, 所述冷却通孔沿所述环体的厚度方向贯穿所述环体。
12、 根据权利要求 11 所述的进气环, 其特征在于, 在所述环体的上表 面和下表面至少之一上且绕每个所述冷却通孔分别设有用于容纳密封圈的密 封槽。
13、 一种进气组件, 其特征在于, 包括:
多个进气环, 每个所述进气环为权利要求 1-12中任一项所述的进气环, 所述多个进气环在上下方向上叠置在一起, 所述多个进气环的所述多个供气 孔中的至少一部分连接孔在上下方向上分别对齐, 且相邻进气环上的所述导 入通道在所述进气环的周向上彼此错开; 和 多个供气管, 所述多个供气管分别从下面插入到所述对齐的供气孔内, 每个供气管上设有出气口且所述出气口沿径向贯穿供气管的壁, 所述多个供 气管的所述出气口分别与所述多个进气环的所述均流槽对应。
14、 根据权利要求 13 所述的进气组件, 其特征在于, 所述多个进气环 为根据权利要求 8至 10中的任一项所述的进气环,且所述多个进气环中相邻 两个进气环的所述多个连接孔中的至少一部分连接孔在上下方向上分别对 齐, 所述进气组件还包括多个连接件, 其中所述多个连接件分别配合到相邻 两个进气环的所述对齐的连接孔内以连接该相邻的两个进气环。
15、 根据权利要求 14所述的进气组件, 其特征在于, 所述多个进气环 为权利要求 10所述的进气环,在相邻两个所述进气环中,其中一个所述进气 环的所述第一连接孔与另一个所述进气环的所述第二连接孔对齐, 且所述连 接件为螺栓。
16、 根据权利要求 13 所述的进气组件, 其特征在于, 所述多个进气环 为根据权利要求 11或 12所述的进气环, 所述多个进气环的所述多个冷却通 孔中的至少一部分冷却通孔在上下方向上分别对齐。
17、 根据权利要求 13 所述的进气组件, 其特征在于, 每个所述供气管 的上端封闭。
18、 根据权利要求 13所述的进气组件, 其特征在于, 还包括: 上密封件, 所述上密封件设置在最上面的进气环的上表面上; 和 下密封件, 所述下密封件设置在最下面的进气环的下表面上。
19、 一种工艺腔装置, 其特征在于, 包括:
腔室本体, 所述腔室本体内限定有工艺腔且所述腔室本体具有排气口; 多个托盘, 所述多个托盘沿上下方向间隔一定距离地布置在所述工艺腔 内; 和
进气组件, 所述进气组件为根据权利要求 13-18中任一项所述的进气组 件, 所述进气组件设置在所述工艺腔内且所述进气组件的所述多个供气管的 下端延伸出所述工艺腔。
20、 一种化学气相沉积设备, 其特征在于, 包括根据权利要求 19所述 的工艺腔装置。
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JP2000058463A (ja) * | 1998-08-17 | 2000-02-25 | Toshiba Corp | 半導体製造装置 |
CN101355010A (zh) * | 2007-07-26 | 2009-01-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 进气装置及反应腔室 |
CN101445918A (zh) * | 2007-11-28 | 2009-06-03 | K.C.科技股份有限公司 | 一种原子层沉积装置 |
JP2010027675A (ja) * | 2008-07-15 | 2010-02-04 | Sharp Corp | 気相成長装置 |
CN101315880A (zh) * | 2008-07-17 | 2008-12-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种气体分配装置及采用该气体分配装置的等离子体处理设备 |
CN101339895A (zh) * | 2008-08-22 | 2009-01-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种气体分配装置及应用该分配装置的等离子体处理设备 |
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US8778079B2 (en) | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
WO2020159708A1 (en) * | 2019-01-31 | 2020-08-06 | Lam Research Corporation | Showerhead with configurable gas outlets |
CN113366145A (zh) * | 2019-01-31 | 2021-09-07 | 朗姆研究公司 | 具有可调式气体出口的喷头 |
TWI828538B (zh) * | 2022-04-07 | 2024-01-01 | 大陸商中微半導體設備(上海)股份有限公司 | 進氣裝置及襯底處理設備 |
Also Published As
Publication number | Publication date |
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CN102776489B (zh) | 2014-08-27 |
SG194576A1 (en) | 2013-12-30 |
CN102776489A (zh) | 2012-11-14 |
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