SG194576A1 - Gas inlet ring, gas inlet component, process chamber device and cvd equipment - Google Patents
Gas inlet ring, gas inlet component, process chamber device and cvd equipment Download PDFInfo
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- SG194576A1 SG194576A1 SG2013078498A SG2013078498A SG194576A1 SG 194576 A1 SG194576 A1 SG 194576A1 SG 2013078498 A SG2013078498 A SG 2013078498A SG 2013078498 A SG2013078498 A SG 2013078498A SG 194576 A1 SG194576 A1 SG 194576A1
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- gas inlet
- gas
- ring body
- ring
- holes
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- 238000000034 method Methods 0.000 title claims abstract description 105
- 230000008569 process Effects 0.000 title claims abstract description 104
- 230000002093 peripheral effect Effects 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009827 uniform distribution Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000000707 layer-by-layer assembly Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- UHZZMRAGKVHANO-UHFFFAOYSA-M chlormequat chloride Chemical compound [Cl-].C[N+](C)(C)CCCl UHZZMRAGKVHANO-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Disclosed are a gas inlet ring, a gas inlet component, a process chamber device and CVD equipment, wherein the gas inlet ring (10) comprises a ring body (101) respectively provided with a gas outlet groove (1011), a flow-equalizing groove (1012), gas feeding holes (1013) and inlet channels (1018); the gas outlet groove (1011) is formed on the outer peripheral surface of the ring body (101) along the peripheral direction of the ring body (101); the flow-equalizing groove (1012) is formed on the lower surface of the ring body along the peripheral direction of the ring body (101) and connected to the gas outlet groove (1011), the gas feeding holes (1013) penetrate the ring body (101) along the thickness direction of the ring body and are located on the inner side of the flow-equalizing groove (1012); the inlet channels (1018) are formed on the lower surface of the ring body (101) along the radial direction of the ring body (101); and each of the inlet channels (1018) connects at least one of the gas feeding holes (1013) to the flow-equalizing groove (1012). The gas inlet ring (10) has a simple structure and low cost, is convenient to manufacture, and can achieve a uniform distribution of gas.
Description
GAS INLET RING, GAS INLET COMPONENT, PROCESS CHAMBER
DEVICE AND CVD APPARATUS
The present invention relates to a gas inlet ring, a gas inlet component having the gas inlet ring, a process chamber device having the gas inlet component and a chemical vapor deposition apparatus having the process : chamber device.
Chemical vapor deposition (CVD) apparatus is a critical apparatus for manufacturing LED (light emitting diode) epitaxial wafers. Operation principle of the CVD apparatus is as follows: high temperature chemical reaction will occur when process gas passes through the surface of a high temperature substrate wafer and a thin film is deposited on the surface of the substrate wafer. By adjusting process gas and process temperature, CVD apparatus can be used to deposit various thin films on the substrate wafer of LED, including a multiple quantum well structure determining lighting performance of a LED chip.
During the process of depositing the multiple quantum well structure, it generally needs various kinds of process gas simultaneously.
Fig.6 illustrates a structure of a process chamber of a MOCVD apparatus in the prior art, in which a plurality of layers of trays 200’ are provided along the vertical direction, a plurality of substrate wafers can be placed on each tray, and the plurality of trays can be rotated together by a rotating mechanism. A gas inlet component 100’ is mounted at the center of the process chamber, gas outlet holes are opened at sides of the gas inlet component 100’ along the vertical direction to correspond to each layer of tray, and various kinds of process gas are mixed outside the process chamber and then together supplied to the process chamber by the gas inlet component 100’.
However, since the various kinds of process gas are mixed before entering the process chamber, it is apt to result in pre-reaction between the various kinds of process gas, and consume a part of expensive process gas. In addition, according to the existing gas inlet component 100’, flow and pressure of process gas between respective layers of trays among the plurality of layers of trays 200" may not be adjusted, so it is difficult to achieve uniform flow of process gas for each layer of tray 200’, resulting in different performance between substrate wafers on respective layers of trays 200’. After mixed process gas is introduced into gaps between respective layers of trays 200, it will contact with lower surfaces of the plurality of layers of trays 200’ which are at a high temperature so that a high temperature chemical reaction will take : place, which not only consumes expensive process gas but also make a thin film deposited on lower surfaces of the trays 200’, and even forms particles which will in turn contaminate upper surfaces of substrate wafers located at lower sides of respective gaps. Moreover, by-products produced by the pre-reaction between the various kinds of process gas may deposit on inner surfaces of the gas channels, and when this case is serious, a problem that the gas channels will be blocked at inside and process gas supply is not stable will be arise. Further, the above gas inlet system in the prior art is an integral structure and so is not convenient to clean and maintain.
The present invention aims to solve at least one of the above technical problems.
To this end, an object of the present invention is to propose a gas inlet ring, which is simple in structure, easy to be manufactured, low in cost and able to achieve uniform distribution of gas.
Another object of the present invention is to provide a gas inlet component having the above gas inlet ring, using this gas inlet component, inlet gas uniformity and stability are relatively high, and inlet gas flow and pressure can be under a layered control; and it is simple to manufacture the gas inlet component and convenient to disassemble it.
Another object of the present invention is to propose a process chamber device having the above gas inlet component.
Another object of the present invention is to propose chemical vapor deposition apparatus having the above process chamber device.
A gas inlet according to an embodiment of a first aspect of the present invention includes: a ring body, the ring body is provided with a gas outlet groove, a flow equalization groove, a plurality of gas feeding holes and a plurality of introduction channels, wherein the gas outlet groove is formed on the outer peripheral surface of the ring body along the peripheral direction of the ring body; the flow equalization groove is formed on the lower surface of the ring body along the peripheral direction of the ring body and communicates with the gas outlet groove; the plurality of gas feeding holes run through the - ring body along the thickness direction of the ring body, and in the radial direction of the ring body, the plurality of gas feeding holes are located at an inner side of the flow equalization groove; and the plurality of introduction channels are formed on the lower surface of the ring body along the radial direction of the ring body and each of the plurality of introduction channels communicates at least one of the plurality of gas feeding holes with the flow equalization groove.
The gas inlet ring according to the embodiment of the present invention is simple in structure, easy to be manufactured, low in cost and able to achieve uniform distribution of gas.
In addition, the gas inlet ring according to the above embodiment of the present invention further includes the following additional technical features.
According to one embodiment of the present invention, the ring body is further provided with a plurality of gas vents which are uniformly distributed along the peripheral direction of the ring body and extend along the thickness direction of the ring body to communicate the flow equalization groove with the gas outlet groove by the plurality of gas vents.
According to one embodiment of the present invention, the plurality of introduction channels are uniformly distributed along the peripheral direction of the ring body.
According to one embodiment of the present invention, the flow equalization groove is adjacent to the outer peripheral edge of the ring body, and the plurality of gas feeding holes are adjacent to the inner peripheral edge of the ring body.
According to one embodiment of the present invention, the plurality of gas feeding holes are uniformly distributed along the peripheral direction.
According to one embodiment of the present invention, the ring body is further provided with a plurality of exhaust holes, which correspond to the plurality of gas feeding holes to communicate the plurality of gas feeding holes with a center hole of the ring body respectively.
According to one embodiment of the present invention, the plurality of exhaust holes are grooves formed on the lower surface of the ring body and extending along the radial direction of the ring body. :
According to one embodiment of the present invention, the ring body is further provided with a plurality of connection holes which run through the ring body along the thickness direction of the ring body.
According to one embodiment of the present invention, the connection holes are threaded holes.
According to one embodiment of the present invention, the connection holes includes first connection holes and second connection holes, the second connection holes are countersunk head threaded holes, and the first and second connection holes are alternately distributed along the peripheral : direction of the ring body.
According to one embodiment of the present invention, the ring body is further provided with a plurality of cooling through holes which run through the ring body along the thickness direction of the ring body.
According to one embodiment of the present invention, on at least one of the upper and lower surfaces of the ring body, there are sealing grooves for accommodating sealing rings to surround the plurality of cooling through holes respectively.
In order to achieve the above object, the gas inlet component according to the embodiment of the second aspect of the present invention, includes: a plurality of gas inlet rings, each of the plurality of gas inlet rings is the gas inlet ring according to any one of the above embodiments, at least part of the connection holes of the plurality of gas inlet rings are stacked together in the vertical direction, the plurality of gas feeding holes of the plurality of gas inlet rings are respectively aligned in the vertical direction, and the introduction channels of two adjacent gas inlet rings stagger with each other in the peripheral direction of the ring body; and a plurality of gas feeding pipes, the plurality of gas feeding pipes are inserted into the aligned gas feeding holes from below respectively, each of the plurality of gas feeding pipes is provided with an gas outlet which runs through the wall of the gas feeding pipe along the radial direction, the gas outlets of the plurality of gas feeding pipes correspond to the flow equalization grooves of the plurality of gas inlet rings respectively.
In addition, the gas inlet component according to the above embodiment of the present invention has the following additional technical features.
In the case that the gas inlet ring is provided with a plurality of connection holes, at least part of the plurality of connection holes of two adjacent gas inlet rings among the plurality of gas inlet rings are respectively aligned in the vertical direction, the gas inlet component further includes a plurality of connection parts which are respectively fitted into the aligned connection holes of the two adjacent gas inlet rings to connect the two adjacent gas inlet rings.
Further, in the case that the plurality of connection holes include first connection holes and second connection holes, the second connection holes are countersunk head threaded holes, and the first and second connection ' holes are alternately distributed along the peripheral direction of the ring body, among two adjacent gas inlet rings, the first connection hole of one gas inlet ring and the second connection hole of the other gas inlet ring are aligned, and the connection part is a bolt.
In the case that the gas inlet ring is provided with a plurality of cooling through holes, at least part of the plurality of cooling through holes of the plurality of gas inlet rings are respectively aligned in the vertical direction.
Wherein, an upper end of each of the plurality of gas feeding pipes is closed.
In addition, according to one embodiment of the present invention, the gas inlet component further includes an upper sealing part, which is provided on the upper surface of the uppermost gas inlet ring; and a lower sealing part, which is provided on the lower surface of the lowermost gas inlet ring.
In order to achieve the above object, a process chamber device according to embodiments of the third aspect of the present invention includes a chamber body, inside which a process chamber is defined and the chamber body is provided with a gas outlet; a plurality of trays, which are arranged in the process chamber at intervals along the vertical direction; and a gas inlet component, which is the gas inlet component according to any one of the above embodiments, the gas inlet component is provided in the process chamber, and lower ends of the plurality of gas feeding pipes of the gas inlet component extend outside the process chamber.
In order to achieve the above object, a chemical vapor deposition apparatus according to embodiments of the fourth aspect of the present invention includes the process chamber device according to the above embodiment.
Additional aspects and advantages of the present invention will be given in the following description, will become apparent from the following description or will be appreciated from implementation of the present invention.
Above and/or additional aspects and advantages of the present invention will be become apparent and easy to be understood by description of embodiments in conjunction with following figures.
Fig.1 is a three-dimensional schematic view of a gas inlet component according to one embodiment of the present invention;
Fig.2a is a top view of a gas inlet ring according to one embodiment of the present invention;
Fig.2b is a side view of the gas inlet ring illustrated in Fig.2a;
Fig.2¢ is a bottom view of the gas inlet ring illustrated in Fig. 2a;
Fig.3 is a perspective schematic view of a gas inlet component according to one embodiment of the present invention;
Fig.4 is a locally enlarged schematic view of a part of the gas inlet component illustrated in Fig.3;
Fig.5 is a locally enlarged schematic view of another part of the gas inlet component illustrated in Fig.3; and
Fig.6 is a schematic view of a process chamber device of CVD apparatus in the prior art.
In the following, embodiments of the present invention will be described in detail, examples of the embodiments are illustrated in the Figures throughout which like or equivalent parts or elements having like or equivalent functions are labeled with like or equivalent numerals. Embodiments described below by referring to the Figures are illustrative, are only intended to explain the present invention and should not be interpreted as limiting the present invention. :
In the description of the present invention, it should be understood that, terms “center”, “longitudinal”, “lateral”, “above”, “below”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside” etc. denote oriental and positional relationships which are based on oriental and positional relationships illustrated in the Figures, are only intended to facilitate describing the present invention and making the description simple, and are not intended to denote or imply that the referred device or element must have the particular orientation and must be configured or operated to be at the particular orientation, and so should not be interpreted to limit the present invention. In addition, the term “a plurality of’ should be interpreted as "at least two".
In the description of the present invention, it should be pointed out that unless additionally explicitly regulated and defined, terms “mount”, “connect”, and “link” should be comprehended in a wider sense, for example, it may be a fixed connection, an integrated connection, or a detachable connection; it may be communication between two elements at the inside; it may be a direct connection, or may be an indirect connection via a middle medium. Persons skilled in the art may understand the particular meanings of the above terms according to the specific conditions.
In the following, a gas inlet ring 10 and a gas inlet component 100 according to an embodiment of the present invention will be first described with reference to Figs.1 to 5.
The following embodiment will be described taking the gas inlet component 100 and the gas inlet ring 10 supplying gas to a process chamber as an example, the process chamber device is provided with three layers of trays for carrying substrates and is required to supply three kinds of process gas to substrates on each layer of tray. It should be understood that, the present invention is not limited thereto. As shown in Fig.1, the gas inlet component 100 according to the embodiment of the present invention includes a plurality of gas inlet rings 10 and a plurality of gas feeding pipes 30.
First, the gas inlet ring 10 of the gas inlet component 100 according to the embodiment of the present invention will be described.
As shown in Figs. 2a to 2c, the gas inlet ring 10 includes a ring body 101, and the ring body 101 is provided with a gas outlet groove 1011, a flow : equalization groove 1012, a plurality of gas feeding holes 1013 and a plurality of introduction channels 1018.
In particular, as shown in Fig.2b, the gas outlet groove 1011 is formed on the outer peripheral surface of the ring body 101 along the peripheral direction of the ring body 101. As shown in Figs.2c and 3, the flow equalization groove 1012 is formed on the lower surface of the ring body 101 along the peripheral direction of the ring body 101 and communicates with the gas outlet groove 1011. The gas feeding holes 1013 run through the ring body 101 along the thickness direction of the ring body 101, and are located at the inner side of the : gas equalization groove 1012 in the radial direction. The introduction channels 1018 are formed on the lower surface of the ring body 101 along the radial direction of the ring body 101 and each introduction channel 1018 communicates one gas feeding hole 1013 with the flow equalization groove 1012.
It should be understood that, in practical applications, each introduction channel 1018 may also communicate two or more gas feeding holes 1013 with the same flow equalization groove 1012, in which case the two or more gas feeding holes 1013 are configured to be located on one surface of the same ring body 101 and preferably to be adjacent to each other. In fact, this case is particularly applicable to a following circumstance in which respective gas feeding holes 1013 on the ring body 101 are of the same size and one kind of process gas among various kinds of process gas is larger than others in consumption during a process, and in such a circumstance two or more gas feeding holes 1013 can be used to feed the one kind of process gas.
In addition, in order to cool the gas inlet ring 10, optionally, the ring body 101 is further provided with a cooling through hole 1016 supplying cooling medium, and this cooling through hole 1016 runs through the ring body 101 along the thickness direction of the ring body 101.
In addition, in order to make it more convenient to assemble the gas inlet ring 10 into the gas inlet component 100 and make the gas inlet component 100 more stable and easy to be detached, the ring body 101 is further provided with a connection hole 1015 for connecting a plurality of gas inlet rings 10 together, and a connection part (such as a bolt) can be used to achieve : connection among the plurality of gas inlet rings 10. It should be understood that, the present invention is not limited thereto, and persons skilled in the art will be appreciated that without departing from the scope intended by the present invention, according to requirements the gas inlet ring 10 may be provided with a connection part (such as a snap-in mechanism) to achieve connection among the plurality of gas inlet rings 10, a welding method may be used to connect adjacent gas inlet rings 10 together so as to achieve assembly of the gas inlet component 100, and so on. It should be pointed out that, there are twenty-seven gas feeding holes 1013 illustrated in the Figure, however, in practical applications, the number of the gas feeding holes 1013 is not limited thereto and the particular number thereof may be set according to the kind(s) of used process gas, the layer number of graphite trays, etc.
In the following, the gas inlet component 100 according to an embodiment of the present invention will be described.
The gas inlet component 100 has a plurality of gas inlet rings 10 described with reference to the above embodiment, and the plurality of gas inlet rings 10 are stacked together along the vertical direction. Below, the gas inlet ring 10 is the gas inlet ring provided by the above preferred embodiment of the present invention, that is, as for the gas inlet ring 10 used in the present embodiment, the ring body 101 thereof is provided with a connection hole 1015 and a cooling through hole 1016. It should be understood that, correspondingly to the connection hole 1015 of the gas inlet ring 10, the gas inlet component 100 provided by the present embodiment is further provided with a plurality of connection parts 20 to achieve connection among the plurality of gas inlet rings 10.
Wherein, the plurality of gas feeding holes 1013 of the plurality of gas inlet rings 10 are aligned along the vertical direction respectively; and the plurality of cooling through holes 1016 of the plurality of gas inlet rings 10 are aligned in the vertical direction respectively. Moreover, among the plurality of gas inlet rings 10, the plurality of connection holes 1015 of two adjacent gas inlet rings are aligned in the vertical direction respectively. At the same time, the introduction channels 1018 on two adjacent gas inlet rings 10 stagger with each other in the peripheral direction of the gas inlet rings 10, to further prevent : the various kinds of process gas from mixing too early, and further improve uniformity of the various kinds of process gas in the process chamber. 10 The plurality of connection parts 20 are respectively fitted into the connection holes 1015 with which two adjacent gas inlet rings 10 are respectively aligned to achieve connection between the two adjacent gas inlet rings 10, and connection among the plurality of gas inlet rings 10 can be achieved by connection between every two gas inlet rings 10 among the plurality of gas inlet rings 10.
In the present embodiment, the plurality of gas feeding pipes 30 are ' respectively inserted into the aligned plurality of gas feeding holes 1013 from below, the pipe wall of each gas feeding pipe 30 is provided with a gas outlet 301 and the gas outlet 301 runs through the wall of the gas feeding pipe 30 along the radial direction, so as to communicate internal and external environments of the gas feeding pipe 30 with each other via the gas outlet 301.
Moreover, gas outlets 301 of a plurality of gas feeding pipes 30 correspond to respective flow equalization grooves 1012 of the plurality of gas inlet rings 10.
In the following, assembly of the gas inlet component 100 according to the above embodiment of the present invention will be described.
In the following embodiment, the description will be made taking the gas inlet component 100 supplying process gas to the following process chamber device as an example: the process chamber device is provided with three layers of trays for carrying substrates and is required to supply three kinds of process gas to substrates on each tray. It should be understood that, the present invention is not limited thereto and persons skilled in the art will be appreciated that without departing from the scope intended by the present invention, the number of the gas inlet rings 10, the number of the gas feeding holes 1013 on each gas inlet ring 10, the number of the introduction channels 1018 etc. may be changed according to requirements.
The gas inlet component 100 according to the present embodiment includes three gas inlet rings 10 (which are referred to as the first to the third gas inlet rings below), and each gas inlet ring 10 is provided with three introduction channels 1018, twenty-seven gas feeding holes 1013, three cooling through holes 1016 and six connection holes 10153. .
First, the first and second gas inlet rings 10 are stacked together in the vertical direction, the gas feeding holes 1013 of the first and second gas inlet rings 10 are made to be respectively aligned in the vertical direction, and it is confirmed that the introduction channels 1018 of the first and second gas inlet rings 10 stagger with each other in the peripheral direction of the gas inlet rings 10. In addition, when using the gas inlet rings 10 according to the above preferred embodiment, at least part of all the connection holes 1015 of the first and second gas inlet rings 10 are made to be aligned in the vertical direction, and the plurality of cooling through holes 1016 of the first and second gas inlet rings 10 are ensured to be aligned in the vertical direction.
In the following, the first and second gas inlet rings 10 are connected together. For example, when using the gas inlet rings 10 according to the above referred embodiment, the first and second gas inlet rings 10 are connected together by the connection part 20.
Then, the third gas inlet ring 10 is further superimposed on the upper first gas inlet ring 10 or below the lower second gas inlet ring 10, the plurality of gas feeding holes 1013 of the third gas inlet ring 10 and the plurality of gas feeding holes 1013 of one of the first and second gas inlet rings 10 adjacent to the third gas inlet ring 10 are made to be aligned in the vertical direction, and the introduction channels 1018 of the third gas inlet ring 10 and the introduction channels 1018 of the one gas inlet ring 10 adjacent to the third gas inlet ring 10 are ensured to stagger with each other in the peripheral direction of the gas inlet rings 10. In addition, when using the gas inlet rings 10 according to the above preferred embodiment, it is also required to make the plurality of cooling through holes 1016 of the third gas inlet ring 10 and the plurality of cooling through holes 1016 of the first and second gas inlet rings 10 aligned in the vertical direction, and make the connection hole 1015 of the third gas inlet ring 10 and the connection hole 1015 of the one gas inlet ring 10 of the first and second gas inlet rings 10 adjacent to the third gas inlet ring 10 aligned in the vertical direction, and the connection part 20 is inserted into the aligned connection holes 1015, so as to connect the third gas inlet ring 10 to the one gas inlet ring 10 of the first and second gas inlet rings 10 adjacent to the third gas inlet ring 10. -
It should be understood that, when it is required to supply more kinds of process gas (more than three kinds) to each layer of tray and substrates carried thereon, gas inlet rings 10 of a predetermined number can be connected together by repeating the above operations.
Finally, gas feeding pipes 30 are respectively inserted into the plurality of gas feeding holes 1013 respectively aligned in the vertical direction, and gas outlets 301 of the plurality of gas feeding pipes 30 are made to correspond to flow equalization grooves 1012 of the plurality of gas inlet rings 10 respectively.
In the present embodiment, since the number of kinds of process gas supplied ' to substrates carried by each layer of tray is three, and the number of introduction channels 1018 provided on each gas inlet ring 10 is three, the number of the gas feeding pipes 30 is nine. So, with the gas inlet component 100 provided by the present embodiment, the three kinds of process gas required by substrates can be respectively supplied by the first to three gas inlet rings 10 one by one, and every kind of process gas passes through the three gas feeding pipes 30, enters the flow equalization groove 1012 via the three introduction channels 1018 communicating with the three gas feeding pipes 30 to be equalized, and then supplied to substrates.
It should be pointed out that, when performing assembly, in order to ensure that the inserted gas feeding pipes 30 supply process gas to respective layers respectively, it is required to make at least part of the plurality of gas feeding holes 1013 aligned in the vertical direction, that is, it is necessary to make the part of gas feeding holes 1013, into which the gas feeding pipes 30 are required to be inserted, on the respective gas inlet rings 10 aligned in the vertical direction. In practical applications, the particular number of gas feeding holes 1013 that are required to be aligned may be determined based on the number of kinds of the required process gas.
In addition, it should be understood that, when using the gas inlet rings 10 according to the above referred embodiment, in order to cool the respective gas inlet rings 10 by cooling medium during operation, it is possible to make at least part of the plurality of cooling through holes 1016 aligned in the vertical direction based on requirements of a specific application and the number of the cooling through holes 1016 in every gas inlet ring 10. As for the plurality of . connection holes 1015 of the plurality of gas inlet rings 10, since the gas inlet component 100 may be assembled in a layer-by-layer assembly manner, it only needs to make at least part of the plurality of connection holes 1015 of two adjacent gas inlet rings 10 aligned in the vertical direction respectively.
In addition, it should be pointed out that, assembly of the gas inlet component 100 is described above taking the layer-by-layer assembly manner as an example and the present invention is not limited thereto. For example, it may also superimpose all the gas inlet rings 10 one time, make the plurality of connection holes 1015 in the respective gas inlet rings 10 aligned in the : vertical direction, and finally insert connection parts 20 of corresponding lengths into the aligned plurality of connection holes 1015, so as to connect the plurality of gas inlet rings 10 together to complete assembly of the gas inlet component 100.
In view of above, the gas inlet ring 10 according to the embodiment of the present invention not only has advantages such as simple structure, easy manufacture and low cost, but also can achieve uniform distribution of gas.
Using the gas inlet component 100 according to the above embodiment of the present invention, the various kinds of process don't need to be pre-mixed before entering the process chamber, but can pass through respective dedicated gas feeding holes 1013 and enter the flow equalization grooves 1012 via the introduction channels 1018 to be equalized, and then are supplied to the process chamber via the gas outlet grooves 1011, in this way, it not only can avoid waste resulted from pre-reaction caused by pre-mix of the various kinds of process gas, but also can avoid problems such as blocking of gas path resulted from by-products of the pre-reaction and unstable supply of process gas. In addition, it is not necessary to connect the flow equalization groove
1012 to the gas feeding holes 1013 directly, from which, not only strength of the gas inlet ring 10 can be increased, but also time of the various kinds of process gas remaining in the flow equalization grooves 1012 can be shortened, thereby facilitating of further avoiding adverse effects brought about by pre-reaction of the various kinds of process gas.
In addition, it is convenient to change the number of gas inlet rings 10 according to structure of the process chamber using the gas inlet component : 100, and so the gas inlet ring 10 adapts well and can be standardized on the design.
Further, at least two adjacent gas inlet rings 10 can be mounted together and detached from each other conveniently by the connection part 20, so it is easy to clean and maintain them, and compared to the snap-in mechanism, the gas inlet component 100 provided by the present embodiment is more rigid in structure and is stronger.
Moreover, compared to the prior art, in the gas inlet ring 10 according to the above embodiment of the present invention, the gas outlet groove 1011 is ‘ formed on the outer peripheral surface of the ring body 101 along the peripheral direction of the ring body 101, which not only make its manufacture more convenient, but also make the gas flow supplied into the process chamber more uniform.
Finally, using the gas inlet component 100 according to the embodiment of the present invention, the dedicated gas feeding hole 1013 is provided for every kind of process gas of every layer of tray, so it is convenient to individually adjust flow and pressure of process gas of respective layers of trays, facilitating improving uniformity of the processed substrate wafers on respective layers of trays.
In some embodiments of the present invention, the ring body 101 may be further provided with a plurality of gas vents 1017 which are uniformly distributed along the peripheral direction of the ring body 101, and the plurality of gas vents 1017 extend along the thickness direction of the ring body 101 to communicate the flow equalization groove 1012 with the gas outlet groove 1011 via the plurality of gas vents 1017. As shown in Figs. 3 to 5, process gas flowing from the gas feeding hole 1013 flows into the flow equalization groove
1012 communicating with the gas feeding hole 1013, then changes its flow direction to be released to the gas outlet groove 1011 by the gas vent 1017, and in turn is supplied to substrates on every layer of tray. In this way, compared to the straight-lined introduction of process gas into the process chamber, the gas inlet component 100 provided by the embodiment of the present invention changes flow direction of process gas in the above manner, to more greatly facilitate improvement of uniformity and stability of process - gas.
In order to further improve uniformity of the various kinds of process gas inside the process chamber along the peripheral direction, a plurality of (in the embodiment, three) introduction channels 1018 extend along the radial direction of the ring body 101 and are uniformly distributed along the peripheral direction of the ring body 101.
Optionally, the flow equalization groove 1012 is formed adjacent to the outer peripheral edge of the ring body 101, and the gas feeding hole 1013 is formed adjacent to the inner peripheral edge of the ring body 101. In this way, ' time of the various kinds of process gas remaining in the flow equalization groove 1012 can be further shortened.
When the gas feeding holes 1013 are uniformly distributed along the peripheral direction of the ring body 101, uniformity of process gas can be further improved.
In addition, the connection hole 1015 and the cooling through hole 1016 can be located between the flow equalization groove 1012 and the gas feeding hole 1013 in the radial direction.
In addition, the connection hole 1015 can be a threaded hole. Preferably, the connection hole 1015 includes a first connection hole 1015a and a second connection hole 1015b, wherein the second connection hole 1015b is a countersunk head threaded hole, and the first connection hole 1015a and the second connection hole 1015b are alternately distributed along the peripheral direction of the ring body 101.
Correspondingly, in the assembled gas inlet component 100, of two adjacent gas inlet rings 10, the first connection hole 1015a of one gas inlet ring 10 and the second connection hole 1015b of the other gas inlet ring 10 are aligned and the connection part 20 is a bolt. In this way, the layer-by-layer assembly of the plurality of gas inlet rings 10 can be achieved easily and it is convenient to achieve standardization of the gas inlet component.
It should be pointed out that, the second connection hole 1015b in Figs.1 to 5 is a countersunk head threaded hole formed on the upper surface of the gas inlet ring 10 in which case the second connection hole 1015b of the upper gas inlet ring 10 and the first connection hole 1015a of the lower gas inlet ring : are aligned. However, it should be understood that, the second connection hole 1015b may also be a countersunk head threaded hole formed on the 10 lower surface of the gas inlet ring 10 in which case it is only required to make the second connection hole 1015b of the lower gas inlet ring 10 and the first connection hole 1015a of the upper gas inlet ring 10 aligned and connect two adjacent gas inlet rings 10 together in an upward direction by the connection part 20 such as a bolt.
In addition, the ring body 101 may be further provided with a plurality of exhaust holes 1019 which correspond to the plurality of gas feeding holes 1013 to communicate the plurality of gas feeding holes 1013 with a center hole of the ring body 101 respectively. In this way, possible residues of various kinds of gas existing between respective layers of gas inlet rings 10 can be exhausted outside of the process chamber rapidly via the plurality of exhaust holes 1019. For example, the exhaust hole 19 may be a groove formed on the lower surface of the ring body 101 and extending along the radial direction.
In addition, in the case that the ring body 101 is provided with the cooling through hole 1016, optionally, a sealing groove 1016A for accommodating a sealing ring is arranged on at least one of the upper and lower surfaces of the ring body 101 to surround every cooling through hole 1016. Correspondingly, in the gas inlet component 100, the sealing ring is provided in the sealing groove 1016A to seal the cooling through hole 1016. In this way, it is ensured that cooling medium is sealed so as to prevent it from leaking into the process chamber, and using the sealing ring as the sealing way can facilitate detaching and cleaning.
In addition, upper ends of the plurality of gas feeding pipes 30 may be closed. In this way, process gas can be prevented from overflowing via the end ends of the gas feeding pipes 30.
In addition, the gas inlet component 100 may also include a upper sealing part provided on the upper surface of the uppermost gas inlet ring 10 (not shown in the Figures) and a lower sealing part provided on the lower surface of the lowermost gas inlet ring 10 (not shown in the Figures).
In the following, a process chamber device according to an embodiment of the present invention will be described. :
The process chamber device according to the embodiment of the present invention includes: a chamber body, a process chamber is defined inside the chamber body and the chamber body has a gas outlet; a plurality of trays arranged in the process chamber at intervals along the vertical direction; and a gas inlet component, the gas inlet component may be the gas inlet component 100 according to any one of the above embodiments of the present invention, the gas inlet component 100 is provided in the process chamber, and lowered ends of a plurality of gas feeding pipes 30 included in the gas inlet component 100 extend outside the process chamber. Structures and functions of other ' parts of the process chamber device are known to persons skilled in the art and description thereof will be omitted.
A chemical vapor deposition apparatus according to an embodiment of the present invention includes the process chamber device according to the embodiment of the present invention.
With the process chamber device and the chemical vapor deposition apparatus according to the embodiments of the present invention, uniformity and stability of process gas in the process chamber can be significantly improved. In addition, the various kinds of process gas are not be pre-mixed before being introduced into the process chamber, which not only can avoid waste of process gas resulted from pre-reaction due to pre-mix of the various kinds of process gas, but also can avoid problems such as blocking of gas paths and unstable supply of process gas resulted from by-products of pre-reaction. In addition, in the process chamber device and chemical vapor deposition apparatus according to the embodiments of the present invention, flow and pressure of process gas in respective layers can be controlled respectively, which will significantly improve uniformity and stability of the process gas in the process chamber, thus improving processing results of substrates and performance of the substrates such as uniformity and stability.
In the present disclosure, description of referred terms "an embodiment”, "some embodiments", "examples", "particular examples", or "some examples" etc. is intended to denote that the particular feature, structure, material or characteristic described in conjunction with the embodiment or example is included in at least one embodiment or example of the present invention. In the : specification, illustrative expression of the above terms is not necessarily referred to as the same embodiment or example. Moreover, described particular feature, structure, material or characteristic may be combined in any appropriate way in any one or more embodiments or examples.
Although embodiments of the present invention have been illustrated and described, any person skilled in the art can make various modifications, changes, substitutes and amendments without departing from the sprit and substance of the present invention and the protection scope of the present invention is defined by the claims and its equivalents.
Claims (20)
1. Agas inlet ring, including a ring body, the ring body is provided with a gas outlet groove, a flow equalization groove, a plurality of gas feeding holes and a plurality of introduction channels, wherein, the gas outlet groove is formed on the outer peripheral surface of the ring body along the peripheral direction of the ring body; : the flow equalization groove is formed on the lower surface of the ring body along the peripheral direction of the ring body and communicates with the gas outlet groove; the plurality of gas feeding holes run through the ring body along the thickness direction of the ring body, and in the radial direction of the ring body, the plurality of gas feeding holes are located at an inner side of the flow equalization groove; and the plurality of introduction channels are formed on the lower surface of the ring body along the radial direction of the ring body and each of the plurality ' of introduction channels communicates at least one of the plurality of gas feeding holes with the flow equalization groove.
2. The gas inlet ring according to claim 1, wherein the ring body is further provided with a plurality of gas vents which are uniformly distributed along the peripheral direction of the ring body and extend along the thickness direction of the ring body so that the flow equalization groove communicates with the gas outlet groove by the plurality of gas vents.
3. The gas inlet ring according to claim 1, wherein the plurality of introduction channels are uniformly distributed along the peripheral direction of the ring body.
4. The gas inlet ring according to claim 1, wherein the flow equalization groove is adjacent to the outer peripheral edge of the ring body, and the plurality of gas feeding holes are adjacent to the inner peripheral edge of the ring body.
5. The gas inlet ring according to claim 1, wherein the plurality of gas feeding holes are uniformly distributed along the peripheral direction.
6. The gas inlet ring according to any one of claims 1 to 5, wherein the ring body is further provided with a plurality of exhaust holes, which correspond to the plurality of gas feeding holes to communicate the plurality of gas feeding : holes with a center hole of the ring body respectively.
7. The gas inlet ring according to claim 6, wherein the plurality of exhaust holes are grooves formed on the lower surface of the ring body and extending along the radial direction of the ring body.
8. The gas inlet ring according to claim 1, wherein the ring body is further provided with a plurality of connection holes which run through the ring body along the thickness direction of the ring body.
9. The gas inlet ring according to claim 8, wherein the connection holes are threaded holes.
10. The gas inlet ring according to claim 9, wherein the connection holes include first connection holes and second connection holes, the second connection holes are countersunk head threaded holes, and the first and second connection holes are alternately distributed along the peripheral direction of the ring body.
11. The gas inlet ring according to claim 1, wherein the ring body is further provided with a plurality of cooling through holes which run through the ring body along the thickness direction of the ring body.
12. The gas inlet ring according to claim 11, wherein on at least one of the upper and lower surfaces of the ring body, there are sealing grooves for accommodating sealing rings to surround the plurality of cooling through holes respectively.
13. Agas inlet component, including: a plurality of gas inlet rings, each of the plurality of gas inlet rings is the gas inlet ring according to any one of claims 1 to 12, the plurality of gas inlet rings are stacked together in the vertical direction, at least part of the connection holes in the plurality of gas feeding holes of the plurality of gas inlet - rings are respectively aligned in the vertical direction, and the introduction channels of two adjacent gas inlet rings stagger with each other in the peripheral direction of the ring body; and a plurality of gas feeding pipes, which are respectively inserted into the aligned gas feeding holes from below, each of the plurality of gas feeding pipes is provided with an gas outlet which runs through the wall of the gas feeding pipe along the radial direction, the gas outlets of the plurality of gas feeding pipes correspond to the flow equalization grooves of the plurality of gas inlet rings respectively.
14. The gas inlet component according to claim 13, wherein the plurality of gas inlet rings are gas inlet rings according to any one of claims 8 to 10, and at least part of the plurality of connection holes of two adjacent gas inlet rings among the plurality of gas inlet rings are respectively aligned in the vertical direction, the gas inlet component further includes a plurality of connection parts which are respectively fitted into the aligned connection holes of the two adjacent gas inlet rings to connect the two adjacent gas inlet rings.
15. The gas inlet component according to claim 14, wherein the plurality of gas inlet rings are gas inlet rings according to claim 10, among two adjacent gas inlet rings, the first connection hole of one gas inlet ring and the second connection hole of the other gas inlet ring are aligned, and the connection part is a bolt.
16. The gas inlet component according to claim 13, wherein the plurality of gas inlet rings are gas inlet rings according to claim 11 or 12, at least part of the plurality of cooling through holes of the plurality of gas inlet rings are respectively aligned in the vertical direction.
17. The gas inlet component according to claim 13, wherein an upper end of each of the plurality of gas feeding pipes is closed.
18. The gas inlet component according to claim 13, further including: : an upper sealing part, which is provided on the upper surface of the uppermost gas inlet ring; and a lower sealing part, which is provided on the lower surface of the lowermost gas inlet ring.
19. A process chamber device, including: a chamber body, a process chamber is defined inside the chamber body and the chamber body is provided with a gas outlet; a plurality of trays, which are arranged in the process chamber at : intervals along the vertical direction; and a gas inlet component, which is the gas inlet component according to any one of claims 13 to 18, the gas inlet component is provided in the process chamber, and lower ends of the plurality of gas feeding pipes of the gas inlet component extend outside the process chamber.
20. A chemical vapor deposition apparatus, including the process chamber device according to claim 19.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110118979.9A CN102776489B (en) | 2011-05-09 | 2011-05-09 | Gas inlet ring, gas inlet assembly, process chamber apparatus and CVD equipment |
| PCT/CN2011/079857 WO2012151830A1 (en) | 2011-05-09 | 2011-09-20 | Gas inlet ring, gas inlet component, process chamber device and cvd equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG194576A1 true SG194576A1 (en) | 2013-12-30 |
Family
ID=47121591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013078498A SG194576A1 (en) | 2011-05-09 | 2011-09-20 | Gas inlet ring, gas inlet component, process chamber device and cvd equipment |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102776489B (en) |
| SG (1) | SG194576A1 (en) |
| WO (1) | WO2012151830A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850514A (en) * | 2020-06-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Air intake and exhaust component for epitaxial growth equipment and epitaxial growth equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101802254B (en) | 2007-10-11 | 2013-11-27 | 瓦伦斯处理设备公司 | Chemical vapor deposition reactor |
| DE102018130139A1 (en) * | 2018-11-28 | 2020-05-28 | Aixtron Se | Gas inlet device for a CVD reactor |
| US20220136107A1 (en) * | 2019-01-31 | 2022-05-05 | Lam Research Corporation | Showerhead with configurable gas outlets |
| CN114318301A (en) * | 2021-12-31 | 2022-04-12 | 拓荆科技股份有限公司 | Gas ring and semiconductor reaction cavity |
| CN116926507A (en) * | 2022-04-07 | 2023-10-24 | 中微半导体设备(上海)股份有限公司 | Air inlet device and substrate processing equipment |
| CN115178117B (en) * | 2022-07-06 | 2024-01-16 | 中国计量大学 | Be suitable for scene smell blending device of carrying on in multimedia device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058463A (en) * | 1998-08-17 | 2000-02-25 | Toshiba Corp | Semiconductor manufacturing equipment |
| CN100527361C (en) * | 2006-12-06 | 2009-08-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution apparatus |
| CN101355010B (en) * | 2007-07-26 | 2010-11-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake installation and reaction chamber |
| CN101369515B (en) * | 2007-08-16 | 2011-08-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity |
| KR100949914B1 (en) * | 2007-11-28 | 2010-03-30 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
| JP5015085B2 (en) * | 2008-07-15 | 2012-08-29 | シャープ株式会社 | Vapor growth equipment |
| CN101315880B (en) * | 2008-07-17 | 2010-06-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus adopting the same |
| CN101339895B (en) * | 2008-08-22 | 2010-06-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution device and plasma processing apparatus applying the same |
| CN101930889A (en) * | 2009-06-25 | 2010-12-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas input device and plasma processing equipment |
-
2011
- 2011-05-09 CN CN201110118979.9A patent/CN102776489B/en active Active
- 2011-09-20 WO PCT/CN2011/079857 patent/WO2012151830A1/en active Application Filing
- 2011-09-20 SG SG2013078498A patent/SG194576A1/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850514A (en) * | 2020-06-30 | 2020-10-30 | 北京北方华创微电子装备有限公司 | Air intake and exhaust component for epitaxial growth equipment and epitaxial growth equipment |
| CN111850514B (en) * | 2020-06-30 | 2022-11-22 | 北京北方华创微电子装备有限公司 | Air intake and exhaust component for epitaxial growth equipment and epitaxial growth equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102776489B (en) | 2014-08-27 |
| WO2012151830A1 (en) | 2012-11-15 |
| CN102776489A (en) | 2012-11-14 |
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