WO2012149692A1 - Method for manufacturing front gate line electrode of solar cell - Google Patents
Method for manufacturing front gate line electrode of solar cell Download PDFInfo
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- WO2012149692A1 WO2012149692A1 PCT/CN2011/073747 CN2011073747W WO2012149692A1 WO 2012149692 A1 WO2012149692 A1 WO 2012149692A1 CN 2011073747 W CN2011073747 W CN 2011073747W WO 2012149692 A1 WO2012149692 A1 WO 2012149692A1
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- bonding
- solar cell
- silicon wafer
- pressing head
- preparing
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 238000003825 pressing Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 238000012806 monitoring device Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 208000010727 head pressing Diseases 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000004332 silver Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to the technical field of preparation of a crystalline silicon solar cell, and in particular to a method for preparing a front gate electrode of a solar cell. Background technique
- a solar cell is a device that directly converts light energy into electrical energy through a photoelectric effect or a photochemical effect.
- Solar photovoltaic power generation will occupy an important seat in the world's energy consumption in the near future, not only to replace some of the conventional energy, but also to become the main body of the world's energy supply. Efficient and low cost has become an important goal for the development of solar cells.
- the front gate line In order to obtain a high-efficiency solar cell, the front gate line has a reduced light-shielding area and an efficient charge collection capability, so the preparation of the front gate line of the solar cell is particularly important.
- the preparation of the front gate electrode of the crystalline silicon solar cell generally adopts a screen printing process, and the prepared gate line has a width of more than 80 micrometers and a height of 5 to 30 micrometers, and a wide grid line has a large light-shielding area, which affects light absorption; After the gate line is thinned, the height of the gate line is lowered, and the ohmic contact resistance of the battery is large, which limits the current collecting ability and reduces the conversion efficiency of the solar cell. Therefore, in order to obtain a battery with high conversion efficiency, the width of the gate line must be reduced, and the aspect ratio of the gate line must be increased.
- the conventional screen printing process has been difficult to achieve.
- the silver paste used in the screen printing process is mainly composed of silver powder particles, an inorganic phase and an organic carrier.
- the silicon wafer needs to be rapidly sintered in a sintering furnace to form a silver electrode.
- the silver electrode and the silicon reach the eutectic temperature, the crystalline silicon atoms are incorporated into the silver electrode in a certain ratio to form an ohmic contact.
- the size, distribution ratio and sintering process of the silver powder in the silver paste will be ohmic The resistance has a large influence, so poor quality silver paste or improper sintering process will increase the series resistance of the electrode and reduce the conversion efficiency of the solar cell. Summary of the invention
- the present invention provides a novel solar cell front gate line electrode preparation method.
- the silicon wafer and the metal grid line are respectively fixed on the lower pressing head and the upper pressing head of the bonding machine, and the metal grid line and the silicon wafer are bonded together by direct bonding to obtain the solar cell grid line electrode. .
- the invention provides a method for preparing a front surface gate electrode of a solar cell, wherein the method specifically fixes a silicon wafer and a metal grid line on a lower pressing head and an upper pressing head of a bonding device, respectively, by direct bonding The metal gate line is bonded to the silicon wafer.
- the method specifically includes:
- the process parameters of the bonding apparatus include the degree of vacuum of the bonding chamber, the temperature of the bonding material, and the bonding energy.
- the step of adjusting the process parameter of the bonding device to enter a preset value range of the direct bonding process condition specifically includes:
- the preset bonding temperature ranges from 20 to 1000 ° C;
- the force applied by the upper ram to the lower ram is controlled to bring the bonding energy into a preset bonding energy range, and the predetermined bonding energy ranges from 10 to 10000 mJ/m 2 .
- the bonding device is a bonding machine; the bonding machine includes a bonding cavity and a bonding component; the bonding component includes the upper pressing head and the lower pressing head; the upper pressing head includes a force console a heating station and a grid clamp; the force console is configured to control a force applied by the upper pressing head to the lower pressing head to provide bonding energy; the heating stage is configured to heat the bonding material to provide bonding a grid clamp for fixing the metal grid to the upper indenter; the lower indenter includes a silicon wafer holder and a platform; the silicon fixture is for fixing the silicon wafer On the lower ram, the platform is used to carry the force applied during bonding.
- the bonding machine also includes a monitoring device for detecting the quality of the grid wire bonding in real time.
- the monitoring device is an infrared transmission detector.
- the silicon wafer is monocrystalline or polycrystalline silicon.
- the metal gate lines are A 1 and A 1 alloy wires, or Ag and Ag alloy wires, or Cu and Cu alloy wires.
- the metal grid lines are circular, square or rectangular in shape and have a diameter ranging from 10 to 80 ⁇ m.
- the invention overcomes the bottleneck of the screen printing process by the direct bonding process, can prepare a gate line electrode with good aspect ratio on the silicon wafer, improves the light absorption and current collecting capability of the solar cell, and converts the solar cell. Efficiency and production efficiency.
- FIG. 1 is a schematic structural view of a bonding machine for preparing a front gate electrode of a solar cell according to an embodiment of the present invention
- FIG. 2 is a flow chart of a method for preparing a front gate electrode of a solar cell by using a direct bonding process according to an embodiment of the present invention
- 3 is a flow chart of a method for preparing a front gate electrode of a solar cell by adjusting a direct bonding process condition according to an embodiment of the present invention.
- the present invention provides a method for preparing a front gate electrode of a solar cell by using a direct bonding process, which comprises placing the processed silicon wafer into a bonding machine cavity, using a direct bonding method, at a preset temperature and Under the action of pressure, the metal grid wire is bonded to the silicon wafer to obtain the front gate electrode of the solar cell.
- the present embodiment provides a method for preparing a solar cell front gate electrode using a direct bonding process, comprising the following steps:
- Step 101 The processed silicon wafer is placed in a cavity of the bonding machine, and is fixed on the lower pressing head of the bonding machine by a silicon wafer clamp;
- the bonding machine used in this embodiment includes a bonding cavity and a bonding component; the bonding component includes an upper pressing head and a lower pressing head, and the upper pressing head includes a force console, a heating table, and a grid wire fixture;
- the bonding force is provided by controlling the force applied to the lower pressing head by the upper pressing head; the heating stage is used for heating the bonding material to provide the bonding temperature; the grid line clamp is used for fixing the metal grid line on the upper pressing head; the lower pressing head Including silicon wafer fixture and platform; silicon wafer fixture is used to fix the silicon wafer on the lower pressing head, and the platform is used to carry the force applied during bonding; in practical applications, the vacuum degree of the bonding environment in the bonding cavity can be set. , providing a clean bonding environment for the bonding process; performing the entire bonding process in a vacuum environment by a preset bonding vacuum;
- the silicon wafer in this embodiment may be single crystal silicon, polycrystalline silicon, single crystal silicon grown with an antireflection film or polycrystalline silicon grown with an antireflection film;
- the silicon wafer shape may be a conventional shape such as a circle, a square or a rectangle;
- Step 102 Fix the metal grid line to be bonded to the upper pressing head of the bonding machine through the grid wire clamp;
- the material of the metal gate line may be an A1 and A1 alloy wire, or an Ag and Ag alloy wire, or a Cu and Cu alloy wire, etc.;
- the metal gate wire may have a circular, square or rectangular shape and a diameter of 10 -80 ⁇ , the length depends on the size of the silicon wafer;
- Step 103 Adjust the direct bonding process parameters of the bonding machine to achieve the working condition of directly bonding the front gate electrode of the solar cell;
- the direct bonding process parameters of the bonding machine include the vacuum degree of the bonding cavity, the bonding material temperature and the bonding energy; the vacuum degree of the bonding cavity can be set in the range of 1 (T 3 Pa ⁇ 10 5 Pa, The better vacuum degree can be set according to the actual bonding effect; the temperature of the bonding material is set at 20-1000. C, the bonding energy is 10-10000 mJ/m 2 ; during the bonding process, the detection key can be passed.
- Step 104 After the direct bonding process parameter is adjusted to the preset direct bonding working range, the metal grid line is pressed onto the silicon wafer by the bonding upper pressing head of the bonding machine; at a certain high temperature and the key Under the capability, the metal gate line and the silicon wafer are directly bonded together to obtain the front gate electrode of the solar cell;
- the bonder can also include a monitoring device that monitors the bonding conditions within the bonding chamber, such as an infrared transmission detector, for detecting the quality of the grid bond in real time.
- a monitoring device that monitors the bonding conditions within the bonding chamber, such as an infrared transmission detector, for detecting the quality of the grid bond in real time.
- the infrared transmission detector can be used to detect in real time whether the bonding strength of the front gate electrode of the solar cell reaches the bonding strength requirement.
- the bonding energy can be adjusted again by the force console until the bonding energy reaches the target bonding effect, thereby preparing the solar cell front gate line. electrode.
- Step 302 The vacuuming system of the bonding machine extracts the gas in the bonding cavity
- Step 304 The vacuum detecting device detects whether the degree of vacuum in the bonding chamber enters a preset vacuum range, and if so, step 306 is performed, otherwise step 302 is performed;
- the vacuum bonding chamber is preset 10- 2 Pa ⁇ 10Pa;
- Step 306 heating the bonding material on the heating platform on the bonding machine
- Step 308 The temperature detecting device detects whether the bonding temperature in the bonding cavity reaches the preset temperature value of the bonding material, and if so, step 310 is performed, otherwise step 306 is performed;
- the temperature of the bonding material is preset to 300-400. C;
- Step 310 bonding the metal grid wire to the silicon wafer on the lower pressing head through the upper pressing head of the bonding machine;
- Step 312 The infrared transmission detector detects whether the bonding strength reaches the preset value of the bonding strength, and if so, executing Step 316, otherwise step 314 is performed;
- Step 314 The infrared transmission detector detects whether the bonding strength is greater than the preset value of the bonding strength, and if so, step 320 is performed, otherwise step 318 is performed;
- Step 316 Prepare the solar cell front gate electrode by direct bonding, and the bonding ends; Step 318: Adjust the bonding energy through the bonding force console, and perform step 310;
- Step 320 The bonding strength is too large, causing the gate electrode preparation to fail and the bonding to end.
- the embodiment of the invention adopts a direct bonding mode, so that the surface characteristics of the gate line are superior to those of the screen printing, and the gate line size is easy to control, and an ideal gate line aspect ratio can be obtained, thereby improving the light absorption and charge collection capability of the solar cell.
- the embodiment of the invention adopts a direct bonding manner, so that the prepared gate line has a lower temperature than the screen printing temperature in the subsequent co-sintering, and the energy consumption is reduced.
Abstract
A method for manufacturing a front gate line electrode of a solar cell is provided which belongs to the field of manufacturing the crystalline silicon solar cell. The detail of said method is to fix a silicon wafer and a metal gate line on a lower pressing head and an upper pressing head of a bonding machine respectively to bond the metal gate line and the silicon wafer into one body. The gate line electrode with good ration of height-width on the silicon wafer can be produced by a direct bonding process, which can overcome the bottle-neck point of screen printing process, and improve the light receiving and current collecting ability of the solar cell, and it can also improve transmission efficiency of the solar cell and production profit.
Description
一种太阳能电池正面栅线电极的制备方法 Method for preparing solar cell front gate line electrode
技术领域 Technical field
本发明涉及晶硅太阳能电池制备技术领域， 特别涉及一种太阳能电池正面 栅线电极的制备方法。 背景技术 The invention relates to the technical field of preparation of a crystalline silicon solar cell, and in particular to a method for preparing a front gate electrode of a solar cell. Background technique
太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装 置。 太阳能光伏发电在不远的将来会占据世界能源消费的重要席位， 不但要替 代部分常规能源， 而且将会成为世界能源供应的主体。 高效、 低成本已成为太 阳能电池发展的重要目标。 为了获得高效太阳能电池， 正面栅线的遮光面积要 减小， 同时又要具备高效的电荷收集能力， 因此太阳能电池正面栅线的制备显 得尤其重要。 A solar cell is a device that directly converts light energy into electrical energy through a photoelectric effect or a photochemical effect. Solar photovoltaic power generation will occupy an important seat in the world's energy consumption in the near future, not only to replace some of the conventional energy, but also to become the main body of the world's energy supply. Efficient and low cost has become an important goal for the development of solar cells. In order to obtain a high-efficiency solar cell, the front gate line has a reduced light-shielding area and an efficient charge collection capability, so the preparation of the front gate line of the solar cell is particularly important.
目前， 晶硅太阳能电池正面栅线电极的制备一般采用丝网印刷工艺， 制备 的栅线宽度在 80微米以上， 高度为 5 ~ 30微米， 较宽的栅线遮光面积大， 影响 光吸收； 但是栅线变细后， 栅线的高度会降低， 电池的欧姆接触电阻大， 限制 了电流的收集能力， 降低了太阳能电池的转化效率。 所以， 要获得高转化效率 的电池， 必须减小栅线宽度， 提高栅线的高宽比， 传统的丝网印刷工艺已经很 难做到。 At present, the preparation of the front gate electrode of the crystalline silicon solar cell generally adopts a screen printing process, and the prepared gate line has a width of more than 80 micrometers and a height of 5 to 30 micrometers, and a wide grid line has a large light-shielding area, which affects light absorption; After the gate line is thinned, the height of the gate line is lowered, and the ohmic contact resistance of the battery is large, which limits the current collecting ability and reduces the conversion efficiency of the solar cell. Therefore, in order to obtain a battery with high conversion efficiency, the width of the gate line must be reduced, and the aspect ratio of the gate line must be increased. The conventional screen printing process has been difficult to achieve.
另外， 丝网印刷工艺中使用的银浆主要由银粉颗粒、 无机相和有机载体组 成， 经过丝网印刷后的硅片， 需要经过烧结炉快速烧结才能形成银电极。 当银 电极与硅达到共晶温度时， 晶体硅原子就会以一定的比例融入到银电极中， 形 成欧姆接触。 由于银浆中的银粉颗粒大小、 成分配比以及烧结工艺都会对欧姆
电阻有较大影响， 因此质量差的银浆或者不合适的烧结工艺都会增加电极的串 联电阻， 降低太阳能电池的转换效率。 发明内容 In addition, the silver paste used in the screen printing process is mainly composed of silver powder particles, an inorganic phase and an organic carrier. After the screen printing, the silicon wafer needs to be rapidly sintered in a sintering furnace to form a silver electrode. When the silver electrode and the silicon reach the eutectic temperature, the crystalline silicon atoms are incorporated into the silver electrode in a certain ratio to form an ohmic contact. Because the size, distribution ratio and sintering process of the silver powder in the silver paste will be ohmic The resistance has a large influence, so poor quality silver paste or improper sintering process will increase the series resistance of the electrode and reduce the conversion efficiency of the solar cell. Summary of the invention
为了解决现有太阳能电池栅线制备工艺中由光吸收率低导致的太阳能电池 转换效率降低的问题， 本发明提供了一种新的太阳能电池正面栅线电极的制备 方法。 该方法是将硅片和金属栅线分别固定于键合机的下压头和上压头上， 通 过直接键合的方式将金属栅线与硅片键合为一体， 得到太阳能电池栅线电极。 In order to solve the problem of reduced solar cell conversion efficiency caused by low light absorption rate in the prior art solar cell grid line fabrication process, the present invention provides a novel solar cell front gate line electrode preparation method. In the method, the silicon wafer and the metal grid line are respectively fixed on the lower pressing head and the upper pressing head of the bonding machine, and the metal grid line and the silicon wafer are bonded together by direct bonding to obtain the solar cell grid line electrode. .
本发明提供了一种太阳能电池正面栅线电极的制备方法， 所述方法具体是 将硅片和金属栅线分别固定于键合装置的下压头和上压头上， 通过直接键合方 式将所述金属栅线与硅片键合为一体。 The invention provides a method for preparing a front surface gate electrode of a solar cell, wherein the method specifically fixes a silicon wafer and a metal grid line on a lower pressing head and an upper pressing head of a bonding device, respectively, by direct bonding The metal gate line is bonded to the silicon wafer.
所述方法具体包括： The method specifically includes:
将硅片和金属栅线分别固定于键合装置的下压头和上压头上； Fixing the silicon wafer and the metal grid line to the lower pressing head and the upper pressing head of the bonding device respectively;
调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围； 所述上压头通过直接键合方式将所述金属栅线压制于所述硅片上。 Adjusting a process parameter of the bonding device into a preset value range of the direct bonding process condition; the upper pressing head pressing the metal gate wire on the silicon wafer by a direct bonding manner.
所述键合装置的工艺参数包括键合腔体的真空度、 键合材料温度和键合能 量。 The process parameters of the bonding apparatus include the degree of vacuum of the bonding chamber, the temperature of the bonding material, and the bonding energy.
所述调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围的 步骤具体包括： The step of adjusting the process parameter of the bonding device to enter a preset value range of the direct bonding process condition specifically includes:
抽取所述键合装置内的气体， 使所述键合装置内的压强进入预先设置的键 合真空度参数范围内， 所述预先设置的真空度参数范围为 1 0— 3Pa ~ 1 05Pa ; Extracting the gas in the bonding device, so that the pressure in the bonding device enters a preset range of the bonding vacuum parameter, and the preset vacuum parameter ranges from 10 to 3 Pa to 1 0 5 Pa ;
加热所述键合装置， 使所述键合装置内的温度进入预先设置的键合温度范
围内， 所述预先设置的键合温度范围为 20_1000°C; Heating the bonding device to bring the temperature in the bonding device into a preset bonding temperature range In the circumference, the preset bonding temperature ranges from 20 to 1000 ° C;
控制所述上压头施加于所述下压头的力， 使键合能量进入预先设置的键合 能量范围内， 所述预先设置的键合能量范围为 10-10000mJ/m2。 The force applied by the upper ram to the lower ram is controlled to bring the bonding energy into a preset bonding energy range, and the predetermined bonding energy ranges from 10 to 10000 mJ/m 2 .
所述键合装置为键合机； 所述键合机包括键合腔体和键合部件； 所述键合 部件包括所述上压头和下压头； 所述上压头包括力控制台、 加热台和栅线夹具； 所述力控制台用于控制所述上压头施加于所述下压头的力， 提供键合能量； 所 述加热台用于加热键合材料， 提供键合温度； 所述栅线夹具用于固定所述金属 栅线于所述上压头上； 所述下压头包括硅片夹具和平台； 所述硅片夹具用于固 定所述硅片于所述下压头上， 所述平台用于承载键合时施加的力。 The bonding device is a bonding machine; the bonding machine includes a bonding cavity and a bonding component; the bonding component includes the upper pressing head and the lower pressing head; the upper pressing head includes a force console a heating station and a grid clamp; the force console is configured to control a force applied by the upper pressing head to the lower pressing head to provide bonding energy; the heating stage is configured to heat the bonding material to provide bonding a grid clamp for fixing the metal grid to the upper indenter; the lower indenter includes a silicon wafer holder and a platform; the silicon fixture is for fixing the silicon wafer On the lower ram, the platform is used to carry the force applied during bonding.
所述键合机还包括监控设备， 用于实时检测栅线键合的质量。 The bonding machine also includes a monitoring device for detecting the quality of the grid wire bonding in real time.
所述监控设备为红外透射检测仪。 The monitoring device is an infrared transmission detector.
所述硅片为单晶硅或多晶硅。 The silicon wafer is monocrystalline or polycrystalline silicon.
所述金属栅线为 A 1及 A 1合金线， 或 Ag及 Ag合金线， 或 Cu及 Cu合金线。 所述金属栅线的形状为圓形、 方形或矩形， 直径范围为 1 0-80μηι。 The metal gate lines are A 1 and A 1 alloy wires, or Ag and Ag alloy wires, or Cu and Cu alloy wires. The metal grid lines are circular, square or rectangular in shape and have a diameter ranging from 10 to 80 μm.
与现有技术相比， 本发明的上述技术方案的有益效果如下： Compared with the prior art, the beneficial effects of the above technical solutions of the present invention are as follows:
本发明通过直接键合工艺， 克服了丝网印刷工艺的瓶颈， 能够在硅片上制 备出良好高宽比的栅线电极， 提高了太阳能电池的光吸收和电流收集能力， 以 及太阳能电池的转化效率和生产效益。 附图说明 The invention overcomes the bottleneck of the screen printing process by the direct bonding process, can prepare a gate line electrode with good aspect ratio on the silicon wafer, improves the light absorption and current collecting capability of the solar cell, and converts the solar cell. Efficiency and production efficiency. DRAWINGS
图 1是本发明实施例制备太阳能电池正面栅线电极的键合机结构示意图； 图 2是本发明实施例利用直接键合工艺制备太阳能电池正面栅线电极的方 法流程图；
图 3 是本发明实施例调整直接键合工艺条件制备太阳能电池正面栅线电极 的方法流程图。 具体实施方式 1 is a schematic structural view of a bonding machine for preparing a front gate electrode of a solar cell according to an embodiment of the present invention; FIG. 2 is a flow chart of a method for preparing a front gate electrode of a solar cell by using a direct bonding process according to an embodiment of the present invention; 3 is a flow chart of a method for preparing a front gate electrode of a solar cell by adjusting a direct bonding process condition according to an embodiment of the present invention. detailed description
为了深入了解本发明， 下面结合附图及具体实施例对本发明进行详细说明。 本发明提供了一种利用直接键合工艺制备太阳能电池正面栅线电极的方 法， 该方法是将处理后的硅片放入键合机腔体内， 采用直接键合方式， 在预先 设置的温度和压力作用下把金属栅线键合于硅片上面， 得到太阳能电池正面栅 线电极。 The present invention will be described in detail below with reference to the drawings and specific embodiments. The invention provides a method for preparing a front gate electrode of a solar cell by using a direct bonding process, which comprises placing the processed silicon wafer into a bonding machine cavity, using a direct bonding method, at a preset temperature and Under the action of pressure, the metal grid wire is bonded to the silicon wafer to obtain the front gate electrode of the solar cell.
参见图 1和图 2,本实施例提供了一种利用直接键合工艺制备太阳能电池正 面栅线电极的方法， 包括以下步骤： Referring to Figures 1 and 2, the present embodiment provides a method for preparing a solar cell front gate electrode using a direct bonding process, comprising the following steps:
步骤 101: 将处理后的硅片放置于键合机腔体内， 通过硅片夹具固定于键合 机下压头上； Step 101: The processed silicon wafer is placed in a cavity of the bonding machine, and is fixed on the lower pressing head of the bonding machine by a silicon wafer clamp;
本实施例使用的键合机包括键合腔体和键合部件； 键合部件包括上压头和 下压头， 上压头包括力控制台、 加热台和栅线夹具等； 力控制台用于控制上压 头施加于下压头的力， 提供键合能量； 加热台用于加热键合材料， 提供键合温 度； 栅线夹具用于固定金属栅线于上压头上； 下压头包括硅片夹具和平台； 硅 片夹具用于固定硅片于下压头上， 平台用于承载键合时施加的力； 在实际应用 中， 可设置键合腔体中键合环境的真空度， 为键合过程提供洁净的键合环境； 通过预先设置的键合真空度， 使整个键合过程在真空环境内进行； The bonding machine used in this embodiment includes a bonding cavity and a bonding component; the bonding component includes an upper pressing head and a lower pressing head, and the upper pressing head includes a force console, a heating table, and a grid wire fixture; The bonding force is provided by controlling the force applied to the lower pressing head by the upper pressing head; the heating stage is used for heating the bonding material to provide the bonding temperature; the grid line clamp is used for fixing the metal grid line on the upper pressing head; the lower pressing head Including silicon wafer fixture and platform; silicon wafer fixture is used to fix the silicon wafer on the lower pressing head, and the platform is used to carry the force applied during bonding; in practical applications, the vacuum degree of the bonding environment in the bonding cavity can be set. , providing a clean bonding environment for the bonding process; performing the entire bonding process in a vacuum environment by a preset bonding vacuum;
本实施例中的硅片可以为单晶硅、 多晶硅、 生长有减反膜的单晶硅或生长 有减反膜的多晶硅； 硅片形状可以为圓形、 方形或矩形等常规形状； The silicon wafer in this embodiment may be single crystal silicon, polycrystalline silicon, single crystal silicon grown with an antireflection film or polycrystalline silicon grown with an antireflection film; the silicon wafer shape may be a conventional shape such as a circle, a square or a rectangle;
步骤 102: 将待键合的金属栅线通过栅线夹具固定于键合机的上压头上；
本实施例中金属栅线的材料可以为 A1及 A1合金线， 或 Ag及 Ag合金线， 或 Cu及 Cu合金线等； 金属栅线的形状可以为圓形、 方形或矩形， 尺寸直径为 10-80μιη, 长度根据硅片尺寸而定； Step 102: Fix the metal grid line to be bonded to the upper pressing head of the bonding machine through the grid wire clamp; In this embodiment, the material of the metal gate line may be an A1 and A1 alloy wire, or an Ag and Ag alloy wire, or a Cu and Cu alloy wire, etc.; the metal gate wire may have a circular, square or rectangular shape and a diameter of 10 -80μιη, the length depends on the size of the silicon wafer;
步骤 103: 调整键合机的直接键合工艺参数， 使之达到直接键合太阳能电池 正面栅线电极的工作条件； Step 103: Adjust the direct bonding process parameters of the bonding machine to achieve the working condition of directly bonding the front gate electrode of the solar cell;
键合机的直接键合工艺参数包括键合腔体的真空度、 键合材料温度和键合 能量； 键合腔体的真空度可以设定在 l(T3Pa ~ 105Pa范围内， 更优的真空度可以 根据实际键合效果来设置； 键合材料的温度设定在 20-1000。C , 键合能量在 10-10000mJ/m2; 在键合的过程中， 可以通过检测键合金属栅线的强度等参数来 调整直接键合的工艺参数范围； 由于直接键合工艺参数在一定范围内可以相互 影响， 因此可以根据实际键合效果作相应调整使之达到最优的键合工艺参数； 步骤 104: 在直接键合工艺参数调整至预设直接键合工作范围内之后， 通过 键合机的键合上压头将金属栅线压制于硅片上； 在一定的高温和键合能下， 金 属栅线与硅片直接键合在一起， 得到太阳能电池正面栅线电极； The direct bonding process parameters of the bonding machine include the vacuum degree of the bonding cavity, the bonding material temperature and the bonding energy; the vacuum degree of the bonding cavity can be set in the range of 1 (T 3 Pa ~ 10 5 Pa, The better vacuum degree can be set according to the actual bonding effect; the temperature of the bonding material is set at 20-1000. C, the bonding energy is 10-10000 mJ/m 2 ; during the bonding process, the detection key can be passed. The strength of the metal grid line and other parameters to adjust the range of the direct bonding process parameters; because the direct bonding process parameters can affect each other within a certain range, it can be adjusted according to the actual bonding effect to achieve the optimal bonding Process parameter; Step 104: After the direct bonding process parameter is adjusted to the preset direct bonding working range, the metal grid line is pressed onto the silicon wafer by the bonding upper pressing head of the bonding machine; at a certain high temperature and the key Under the capability, the metal gate line and the silicon wafer are directly bonded together to obtain the front gate electrode of the solar cell;
在具体实践中， 键合机还可以包括监测键合腔体内键合条件的监控设备， 例如红外透射检测仪， 用于实时检测栅线键合的质量。 在金属栅线与硅片的直 接键合过程中， 可以通过红外透射检测仪实时检测太阳能电池正面栅线电极的 键合强度是否达到键合强度要求。 当键合能量不够而使得键合强度未达到键合 强度要求时， 可通过力控制台调整键合能量再次键合， 直到键合能量达到目标 键合效果为止， 从而制备得到太阳能电池正面栅线电极。 In a specific practice, the bonder can also include a monitoring device that monitors the bonding conditions within the bonding chamber, such as an infrared transmission detector, for detecting the quality of the grid bond in real time. In the direct bonding process between the metal grid line and the silicon wafer, the infrared transmission detector can be used to detect in real time whether the bonding strength of the front gate electrode of the solar cell reaches the bonding strength requirement. When the bonding energy is insufficient and the bonding strength does not reach the bonding strength requirement, the bonding energy can be adjusted again by the force console until the bonding energy reaches the target bonding effect, thereby preparing the solar cell front gate line. electrode.
在利用本实施例的直接键合法制备太阳能电池正面栅线电极的过程中， 调 整直接键合的工艺参数对最终获得优质太阳能电池正面栅线电极非常重要。 下 面给出了本实施例步骤 103和 104中调整直接键合工艺参数和键合过程的具体
执行步骤， 如图 3所示： In the process of preparing the front gate electrode of the solar cell by the direct key method of the present embodiment, it is very important to adjust the process parameters of the direct bonding to obtain the front gate electrode of the high quality solar cell. The specifics of adjusting the direct bonding process parameters and the bonding process in steps 103 and 104 of the present embodiment are given below. Perform the steps, as shown in Figure 3:
步骤 302: 键合机的抽真空系统抽取键合腔体内的气体； Step 302: The vacuuming system of the bonding machine extracts the gas in the bonding cavity;
步骤 304:真空度检测装置检测键合腔体内的真空度是否进入预设定的真空 度范围， 如果是， 则执行步骤 306, 否则执行步骤 302; Step 304: The vacuum detecting device detects whether the degree of vacuum in the bonding chamber enters a preset vacuum range, and if so, step 306 is performed, otherwise step 302 is performed;
本实施例中， 键合腔体内的真空度预设值为 10—2Pa ~ 10Pa; In this embodiment, the vacuum bonding chamber is preset 10- 2 Pa ~ 10Pa;
步骤 306: 键合机上的加热台加热键合材料； Step 306: heating the bonding material on the heating platform on the bonding machine;
步骤 308:温度检测装置检测键合腔体内的键合温度是否达到键合材料的温 度预设值， 如果是， 则执行步骤 310, 否则执行步骤 306; Step 308: The temperature detecting device detects whether the bonding temperature in the bonding cavity reaches the preset temperature value of the bonding material, and if so, step 310 is performed, otherwise step 306 is performed;
本实施例中， 键合材料的温度预设值为 300-400。C; In this embodiment, the temperature of the bonding material is preset to 300-400. C;
步骤 310: 通过键合机上压头将金属栅线键合于下压头上的硅片上； 步骤 312:红外透射检测仪检测键合强度是否达到键合强度预设值，如果是， 则执行步骤 316, 否则执行步骤 314; Step 310: bonding the metal grid wire to the silicon wafer on the lower pressing head through the upper pressing head of the bonding machine; Step 312: The infrared transmission detector detects whether the bonding strength reaches the preset value of the bonding strength, and if so, executing Step 316, otherwise step 314 is performed;
实际应用中， 可以通过检查键合材料内的空洞形状和大小是否在允许范围 内来判断键合强度是否达到键合强度预设值； In practical applications, it can be determined whether the bonding strength reaches the preset value of the bonding strength by checking whether the shape and size of the cavity in the bonding material are within the allowable range;
步骤 314:红外透射检测仪检测键合强度是否大于键合强度预设值，如果是， 则执行步骤 320, 否则执行步骤 318; Step 314: The infrared transmission detector detects whether the bonding strength is greater than the preset value of the bonding strength, and if so, step 320 is performed, otherwise step 318 is performed;
步骤 316: 利用直接键合方式制备太阳能电池正面栅线电极， 键合结束； 步骤 318: 通过键合力控制台调整键合能量， 执行步骤 310; Step 316: Prepare the solar cell front gate electrode by direct bonding, and the bonding ends; Step 318: Adjust the bonding energy through the bonding force console, and perform step 310;
步骤 320: 键合强度过大， 导致栅线电极制备失败， 键合结束。 Step 320: The bonding strength is too large, causing the gate electrode preparation to fail and the bonding to end.
本发明实施例采用直接键合方式， 使得栅线表面结特性优于丝网印刷， 栅 线尺寸易于控制， 可以获得比较理想的栅线高宽比， 提高了太阳能电池的光吸 收和电荷收集能力； 本发明实施例采用直接键合方式， 使得制备的栅线在后续 共烧结时所需温度比丝网印刷的温度低， 降低了能耗。
以上所述的具体实施方式， 对本发明的目的、 技术方案和有益效果进行了 进一步详细说明， 所应理解的是， 以上所述仅为本发明的具体实施方式而已， 并不用于限制本发明， 凡在本发明的精神和原则之内， 所做的任何修改、 等同 替换、 改进等， 均应包含在本发明的保护范围之内。
The embodiment of the invention adopts a direct bonding mode, so that the surface characteristics of the gate line are superior to those of the screen printing, and the gate line size is easy to control, and an ideal gate line aspect ratio can be obtained, thereby improving the light absorption and charge collection capability of the solar cell. The embodiment of the invention adopts a direct bonding manner, so that the prepared gate line has a lower temperature than the screen printing temperature in the subsequent co-sintering, and the energy consumption is reduced. The above described embodiments of the present invention are further described in detail, and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.
Claims
1、 一种太阳能电池正面栅线电极的制备方法， 其特征在于， 所述方法具体 是将硅片和金属栅线分别固定于键合装置的下压头和上压头上， 通过直接键合 方式将所述金属栅线与硅片键合为一体。 A method for preparing a front surface of a solar cell, wherein the method comprises: fixing a silicon wafer and a metal grid line to a lower pressing head and an upper pressing head of the bonding device, respectively, by direct bonding The metal grid line is bonded to the silicon wafer in a manner.
2、如权利要求 1所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述方法具体包括： The method for preparing a front surface of a solar cell of the solar cell according to claim 1, wherein the method specifically comprises:
将硅片和金属栅线分别固定于键合装置的下压头和上压头上； Fixing the silicon wafer and the metal grid line to the lower pressing head and the upper pressing head of the bonding device respectively;
调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围； 所述上压头通过直接键合方式将所述金属栅线压制于所述硅片上。 Adjusting a process parameter of the bonding device into a preset value range of the direct bonding process condition; the upper pressing head pressing the metal gate wire on the silicon wafer by a direct bonding manner.
3、如权利要求 2所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述键合装置的工艺参数包括键合腔体的真空度、 键合材料温度和键合能量。 The method for preparing a solar cell front gate electrode according to claim 2, wherein the bonding device process parameters include a vacuum degree of the bonding cavity, a bonding material temperature, and a bonding energy.
4、如权利要求 3所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述调整所述键合装置的工艺参数进入直接键合工艺条件的预设值范围的步骤 具体包括： The method for preparing a solar cell front gate electrode according to claim 3, wherein the step of adjusting the process parameter of the bonding device to enter a preset value range of the direct bonding process condition comprises:
抽取所述键合装置内的气体， 使所述键合装置内的压强进入预先设置的键 合真空度参数范围内， 所述预先设置的真空度参数范围为 l(T3Pa ~ 105Pa; Extracting the gas in the bonding device to bring the pressure in the bonding device into a preset range of bonding vacuum parameters, wherein the preset vacuum parameter ranges from 1 (T 3 Pa to 10 5 Pa) ;
加热所述键合装置， 使所述键合装置内的温度进入预先设置的键合温度范 围内， 所述预先设置的键合温度范围为 20-1000°C; Heating the bonding device to bring the temperature in the bonding device into a preset bonding temperature range, the preset bonding temperature range is 20-1000 ° C;
控制所述上压头施加于所述下压头的力， 使键合能量进入预先设置的键合 能量范围内， 所述预先设置的键合能量范围为 10-10000mJ/m2。 The force applied by the upper ram to the lower ram is controlled to bring the bonding energy into a preset bonding energy range, and the predetermined bonding energy ranges from 10 to 10000 mJ/m 2 .
5、如权利要求 4所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述键合装置为键合机； 所述键合机包括键合腔体和键合部件； 所述键合部件 包括所述上压头和下压头； 所述上压头包括力控制台、 加热台和栅线夹具； 所 述力控制台用于控制所述上压头施加于所述下压头的力， 提供键合能量； 所述 加热台用于加热键合材料， 提供键合温度； 所述栅线夹具用于固定所述金属栅 线于所述上压头上； 所述下压头包括硅片夹具和平台； 所述硅片夹具用于固定 所述硅片于所述下压头上， 所述平台用于承载键合时施加的力。 The method for preparing a solar cell front gate electrode according to claim 4, wherein the bonding device is a bonding machine; the bonding machine comprises a bonding cavity and a bonding component; The bonding component includes the upper pressing head and the lower pressing head; the upper pressing head includes a force console, a heating stage, and a grid line fixture; a force console for controlling a force applied by the upper ram to the lower ram to provide bonding energy; the heating stage for heating the bonding material to provide a bonding temperature; the grid clamp is used for Fixing the metal grid line on the upper indenter; the lower indenter includes a silicon wafer holder and a platform; the silicon wafer holder is configured to fix the silicon wafer on the lower pressing head, and the platform is used The force applied when carrying the bond.
6、如权利要求 5所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述键合机还包括监控设备， 用于实时检测栅线键合的质量。 6. The method according to claim 5, wherein the bonding machine further comprises a monitoring device for detecting the quality of the grid wire bonding in real time.
7、如权利要求 6所述的太阳能电池正面栅线电极的制备方法，其特征在于， 所述监控设备为红外透射检测仪。 The method of preparing a solar cell front gate electrode according to claim 6, wherein the monitoring device is an infrared transmission detector.
8、 如权利要求 1-7中任一所述的太阳能电池正面栅线电极的制备方法， 其 特征在于， 所述硅片为单晶硅或多晶硅。 The method of producing a front surface gate electrode for a solar cell according to any one of claims 1 to 7, wherein the silicon wafer is single crystal silicon or polycrystalline silicon.
9、 如权利要求 1-7中任一所述的太阳能电池正面栅线电极的制备方法， 其 特征在于， 所述金属栅线为 A1及 A1合金线， 或 Ag及 Ag合金线， 或 Cu及 Cu 合金线。 The method for preparing a solar cell front gate electrode according to any one of claims 1 to 7, wherein the metal gate line is an A1 and A1 alloy wire, or an Ag and Ag alloy wire, or Cu and Cu alloy wire.
10、如权利要求 1-7中任一所述的太阳能电池正面栅线电极的制备方法， 其 特征在于， 所述金属栅线的形状为圓形、 方形或矩形， 直径范围为 10-80μιη。 The method for preparing a front surface gate electrode of a solar cell according to any one of claims 1 to 7, wherein the metal grid line has a circular, square or rectangular shape and a diameter ranging from 10 to 80 μm.
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| US20090266412A1 (en) * | 2006-03-31 | 2009-10-29 | Antulio Tarazona Labrador | Solar Cell, Prefabricated Base Part for a Solar Cell and Method for Manufacturing Such a Base Part and a Solar Cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114883426A (en) * | 2022-04-26 | 2022-08-09 | 中威新能源(成都)有限公司 | Solar cell interconnection method, solar cell and solar cell module |
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| CN102769064B (en) | 2015-04-01 |
| CN102769064A (en) | 2012-11-07 |
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