CN104505439A - Solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step - Google Patents
Solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step Download PDFInfo
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- CN104505439A CN104505439A CN201510011057.6A CN201510011057A CN104505439A CN 104505439 A CN104505439 A CN 104505439A CN 201510011057 A CN201510011057 A CN 201510011057A CN 104505439 A CN104505439 A CN 104505439A
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- Prior art keywords
- solar cell
- cell preparation
- reflection
- preparation
- surface passivation
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000002161 passivation Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000006117 anti-reflective coating Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 231100000252 nontoxic Toxicity 0.000 abstract description 2
- 230000003000 nontoxic effect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the technical field of solar photovoltaic cells, in particular to a solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step. The solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step includes steps that spin-coating or spraying a diffusion source or a gas source to the surface of a semiconductor chip; heating the semiconductor chip in the air, and meanwhile, forming a p-n junction, and passivation layers and anti-reflection films at the upper and lower surfaces; preparing an upper electrode and a lower electrode. The solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step greatly simplifies the solar cell preparation technique based on guaranteeing a high conversion efficiency of the cell, and moreover, the solar cell preparation method has low requirement on equipment, the preparation process is safe, nontoxic and simple, and the cost is low.
Description
Technical field
The invention belongs to solar-energy photo-voltaic cell technical field, be specifically related to a kind of solar cell preparation method.
Background technology
The emphasis that current photovoltaic industry is paid close attention to is cost, especially for the silicon solar cell of technology maturation, must reduce costs under the prerequisite of guaranteed efficiency.Conventional silicon solar cell generally needs cleaning, etching device manufactures matte, and diffusion facilities forms pn knot, and passivating material equipment prepares upper and lower surface passivation layer, and anti-reflection coating equipment prepares antireflective coating, and metal electrode manufacturing equipment manufactures positive and negative electrode.Apparatus expensive, complicate fabrication process, so solar cell cost is higher.
In recent years, although the new technology manufacturing silicon solar cell is not poor from going out, as ion implantation technique, plasma etching making herbs into wool technology, selective emitter technology, copper grid line technology, ultra thin silicon wafers technology, back of the body knot back contacts technology, heteroj unction technologies etc., but these technology are while raising the efficiency, significantly do not reduce costs, some technology add expensive equipment and complicated technical process on the contrary.
For solving above-mentioned Problems existing, needing to innovate the preparation process of silicon solar cell, reducing the critical process in battery manufacturing process, thus significantly reduce battery manufacture cost.
Summary of the invention
The object of the present invention is to provide the solar cell preparation method that a kind of technique is simple, with low cost.
Solar cell preparation method provided by the invention, concrete steps are as follows:
(1) semiconductor wafer surface spin coating or spraying diffuse source;
(2) semiconductor chip heats in air or oxygen, and temperature is 600 DEG C-1000 DEG C, and the time is 5min-120min, forms p-n junction, upper and lower surface passivation layer and antireflective coating simultaneously;
(3) upper/lower electrode is prepared.
The present invention simplifies the complicated technology that current solar cell manufactures greatly, and four processing step: the pn being about to manufacture solar cell key tie preparation, the preparation of upper surface passivation layer, the preparation of lower surface passivation layer and antireflective coating preparation, are reduced to a step.
In the present invention, described semiconductor chip is p-type or n-type silicon chip.
In the present invention, described diffuse source is the liquid source of phosphorus or boron.
In the present invention, described upper electrode material is silver, aluminium, copper, titanium silver, the silver-colored or nesa coating of aluminium etc., or is silk screen printing aluminium or silver paste; Described lower electrode material is silver, aluminium, copper, titanium silver, the silver-colored or nesa coating of aluminium etc., or is silk screen printing aluminium or silver paste.
In the present invention, preparation process can not have matte technique, does not need preheating process, does not need more expensive equipment and high-purity gas, and directly in air or oxygen, heating just can form pn, upper and lower surface passivation layer and antireflective coating.
Method key of the present invention is to heat in atmosphere or in oxygen, the oxide layer that now phosphorus glue (or boron glue) diffuses to form pn knot, the oxide layer of upper and lower surface forms passivation layer, upper surface is thicker is as antireflective coating, and this Si solar cell electrical property obtained is good.
The step that the present invention proposes completes the solar cell preparation method of diffusion, upper and lower surface passivation and antireflective coating, its advantage is: while guarantee battery high conversion efficiency, greatly simplifie the preparation technology of current solar cell complexity, and it is low for equipment requirements, avoid the expensive pn generally adopted in current industry and tie diffusion facilities, upper and lower surface passivation layer equipment and antireflective coating Preparation equipment, safe preparation process is nontoxic, be easy to industrialization, is a kind of process solar cell preparation method simple, with low cost.
Accompanying drawing explanation
Fig. 1 is the battery electrical property of embodiment.
Fig. 2 is the cell reflective spectrum of embodiment and the reflectance spectrum of polished silicon slice.
Embodiment
Following examples in order to the present invention to be described, but are not used in restriction the present invention.
The preparation process of solar cell:
1) silicon chip is 150 micron thickness p-type monocrystalline silicon silicon chip (100), and resistivity is 1-10 ohmcm.
2) adopt spin-coating method that phosphorus slurry is spin-coated on silicon chip surface, spin coating rotating speed 3000 revs/min, 30 seconds time.
3) silicon chip heated 5min by 2 hours in air atmosphere, and heating-up temperature is 800 DEG C-900 DEG C, now completed the preparation of diffusion pn knot, upper/lower electrode passivation and antireflective coating simultaneously.
4) power on the silver electrode of very evaporation or silk screen printing, and bottom electrode is the Al electrode of evaporation silk screen printing.
5) anneal 300 DEG C-550 DEG C, the time is 2min-15min.
Result and analysis
Key of the present invention is to heat in atmosphere, and the oxide layer that now phosphorus glue diffuses to form pn knot, the oxide layer of upper and lower surface forms passivation layer, upper surface is thicker is as antireflective coating, and the Si solar cell electrical property of this simple procedure obtained is better.As shown in Figure 1, the voltage-to-current test result of battery, open circuit voltage Voc is 0.561V, and short circuit current Jsc is by reaching 33.45 mA/cm
2, fill factor, curve factor FF is 0.841, conversion efficiency Eff is 15.77%.
The reflectance spectrum of cell reflective spectrum and polished silicon slice as shown in Figure 2, the reflection of visible battery surface is well below the reflection on polished silicon slice surface, and oxidated layer thickness is about 110nm, serves good antireflective effect.
Through preliminary test, battery efficiency reaches 15.77%, and fill factor, curve factor FF reaches 0.841, and the FF (being 0.828) of the silion cell that specific efficiency is the highest exceeds 0.013.And open circuit voltage Voc only has 0.561V, the further improvement through materials and process can significantly improve.
Claims (3)
1. a step completes diffusion, surface passivation and antireflecting solar cell preparation method, it is characterized in that concrete steps are:
(1) semiconductor wafer surface spin coating or spraying diffuse source; Described diffuse source is the liquid source of phosphorus or boron;
(2) semiconductor chip heats in air or oxygen, and temperature is 600 DEG C-1000 DEG C, and the time is 5min-120min, forms p-n junction, upper and lower surface passivation layer and antireflective coating simultaneously;
(3) upper/lower electrode is prepared.
2. preparation method according to claim 1, is characterized in that described semiconductor chip is p-type or n-type silicon chip.
3. preparation method according to claim 1, is characterized in that described upper and lower electrode material is silver, aluminium, copper, titanium silver, aluminium are silver-colored or nesa coating, or is silk screen printing aluminium or silver paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510011057.6A CN104505439A (en) | 2015-01-10 | 2015-01-10 | Solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510011057.6A CN104505439A (en) | 2015-01-10 | 2015-01-10 | Solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104505439A true CN104505439A (en) | 2015-04-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510011057.6A Pending CN104505439A (en) | 2015-01-10 | 2015-01-10 | Solar cell preparation method capable of finishing diffusion, surface passivation and anti-reflection in one step |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104505439A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799397A (en) * | 2017-10-13 | 2018-03-13 | 浙江昱辉阳光能源江苏有限公司 | A kind of P-type crystal silicon solar cell phosphorus spin coating method |
| CN113644152A (en) * | 2021-07-23 | 2021-11-12 | 杭州电子科技大学 | Thinned crystalline silicon battery pack |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1061492A (en) * | 1990-10-24 | 1992-05-27 | 无比太阳能公司 | On solar cell substrates, form the method and apparatus of diffused junction |
| CN102969371A (en) * | 2012-12-20 | 2013-03-13 | 揭阳中诚集团有限公司 | Structure of two-surface solar cell and manufacturing method of structure |
| CN103560178A (en) * | 2013-11-18 | 2014-02-05 | 北京金晟阳光科技有限公司 | Diffusing method capable of finishing doping PN junction and SE at one time |
| CN104221134A (en) * | 2012-04-13 | 2014-12-17 | 长濑化成株式会社 | Coating dispersant composition, method for producing coating dispersant composition, solar cell, and method for manufacturing solar cell |
-
2015
- 2015-01-10 CN CN201510011057.6A patent/CN104505439A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1061492A (en) * | 1990-10-24 | 1992-05-27 | 无比太阳能公司 | On solar cell substrates, form the method and apparatus of diffused junction |
| CN104221134A (en) * | 2012-04-13 | 2014-12-17 | 长濑化成株式会社 | Coating dispersant composition, method for producing coating dispersant composition, solar cell, and method for manufacturing solar cell |
| CN102969371A (en) * | 2012-12-20 | 2013-03-13 | 揭阳中诚集团有限公司 | Structure of two-surface solar cell and manufacturing method of structure |
| CN103560178A (en) * | 2013-11-18 | 2014-02-05 | 北京金晟阳光科技有限公司 | Diffusing method capable of finishing doping PN junction and SE at one time |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799397A (en) * | 2017-10-13 | 2018-03-13 | 浙江昱辉阳光能源江苏有限公司 | A kind of P-type crystal silicon solar cell phosphorus spin coating method |
| CN113644152A (en) * | 2021-07-23 | 2021-11-12 | 杭州电子科技大学 | Thinned crystalline silicon battery pack |
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