CN106409930A - Fine metal wire solar cell grid and preparation method thereof - Google Patents
Fine metal wire solar cell grid and preparation method thereof Download PDFInfo
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- CN106409930A CN106409930A CN201610963416.2A CN201610963416A CN106409930A CN 106409930 A CN106409930 A CN 106409930A CN 201610963416 A CN201610963416 A CN 201610963416A CN 106409930 A CN106409930 A CN 106409930A
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- 229910001111 Fine metal Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 210000004027 cell Anatomy 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 53
- 239000000463 material Substances 0.000 abstract description 20
- 238000005516 engineering process Methods 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000010970 precious metal Substances 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- 230000009466 transformation Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 CIGS Chemical compound 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the technical field of a solar cell, and specifically relates to a fine metal wire solar cell grid and a preparation method thereof. The fine metal wire solar cell grid comprises a cell. The fine metal wire solar cell grid is characterized in that the surface of the cell is provided with a silicon nitride thin film; the silicon nitride thin film is provided with a wire groove through laser technology; a metal wire is embedded in the wire groove; the surface of the metal wire is wrapped by a nano silver film. Compared with the prior art, the metal wire plated with the nano silver film serves as an electrode grid line, and a novel fine grid line array structure is especially suitable for use, so that light current of cells can be gathered together uniformly; internal resistance is low, efficiency is high and consumption of precious metal materials is small; and cell shading area is small, photoelectric conversion efficiency of the cell can be improved greatly, and meanwhile, since the consumption of precious metal materials is reduced effectively, the cost of electrode materials of the cell is reduced greatly.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically a kind of fine metal line solar cell grid and
Preparation method.
Background technology
Warming with terrestrial climate, structure based on fossil energy for the human society will be progressively by based on clean energy resource
Structure substituted, and in clean energy resource, energy field will be finally dominated in the utilization of solar energy.The utilization of solar energy mainly with
The form of photo-thermal and photovoltaic carries out the conversion of energy, wherein photovoltaic generation be to carry out opto-electronic conversion with solar cell for core and
Obtain electric energy.Solar cell mainly includes crystalline silicon and hull cell, crystal silicon solar energy battery because material source extensively and
Manufacturing process is more ripe and dominated field of photovoltaic power generation, occupy more than 90% market share；Hull cell mainly includes non-
Brilliant（Micro-）The compound semiconductor thin film solar cells such as silicon, CIGS, cadmium telluride, certain because also taking up the features such as it is frivolous
The market share.The cost of electricity-generating of solar cell is still above the cost of electricity-generating of traditional fossil fuel at present, needs into one
The solar battery technology of step development high-efficiency and low-cost, just can be big so that the cost of photovoltaic generation can be competed with fossil energy
Sizable application.Crystal silicon solar energy battery can be divided into polysilicon and monocrystalline silicon battery, with the progress of technology, in silicon materials and electricity
The cost that pond manufactures is while constantly decline, the photoelectric transformation efficiency of crystal silicon battery product more than 20%, the reality of monocrystalline silicon battery
Test room efficiency more than 25%.In the manufacture of all kinds of solar cells, mainly to reduce into material link from the energy consumption manufacturing
This, and the photoelectric transformation efficiency of battery is lifted from device architecture optimization., except each manufacture taking crystal silicon solar energy battery as a example
Outside the energy consumption of process procedure, the gate electrode line noble silver material of the maximum main inclusion silicon chip of ratio and battery in battery material
Material.Wherein silicon chip cost mainly passes through to reduce silicon wafer thickness（As reduced to 100 m from 200 m）To reduce the consumption of material；Electricity
The gate electrode line in pond mainly by silk-screen printing technique by silver paste after silicon face is printed as film, then through high temperature（800℃）
Sinter and form conductive electrode.Mainly adopt crystal silicon solar energy battery and the thin-film solar cells of silk-screen printing technique at present
The representative width of the surface electrode grid line of product is 70-80 m.For reducing the consumption of ag material, reduce the screening of gate electrode line simultaneously
Light area and lift the efficiency of battery, grid line width can be printed onto about 40-50 m by the screen printing technique of new development, if further
Reduce width, it will the performance such as the uniformity of impact grid line technique, electrical conductivity, yield rate, be difficult to accomplish scale production.Therefore adopt
Reduce the width of silver electrode grid line with screen printing technique and the method for reduces cost is limited.The reduction of research at present
The method of silver electrode grid line width is mainly printed silver ink to battery surface using InkJet printing processes, then carries out heat
The silver grating line of live width about 20-30 m after process, can be obtained, but because silver ink is relatively costly, the production of inkjet printing simultaneously
The problems such as efficiency and uniformity, also needs to be researched and solved, and this technology is also in the laboratory research stage it is difficult to commercial application.Separately
Outer method is to reduce the cost of gate electrode line using the technique such as copper plating process of alternative noble silver material, mainly
It is after laser is by the film layers such as the silicon nitride on silion cell surface etching, first one layer of nickel film of plating be as barrier layer, then
Carry out the preparation of copper electrode grid line using plating or chemical plating process, this technique is related to electroplate（Chemical plating）Technique, easily causes dirt
Dye；The techniques such as the simultaneously prepared electrical conductivity of copper electrode grid line, uniformity, tack also need to study further.Solar-electricity
The electroplating technology of the gate line electrode in pond is also at the laboratory research stage at present, if enables scale industrialization application and is also required to
Verify further.
Content of the invention
The present invention is to overcome the deficiencies in the prior art, employs a kind of metal wire being coated with nano silver film as battery
Gate electrode line, can replace existing serigraphy silver electrode grid line, consumption and the cost of ag material can be greatly reduced, can increase simultaneously
Plus the electrical conductivity of gate electrode line；Because employing silver-plated fine metal line, the reflection to incident light and scattering can be increased and improve
Expose to the luminous flux of battery surface, and so that electrode shading-area is reduced, be remarkably improved battery
Photoelectric transformation efficiency.
For achieving the above object, design a kind of fine metal line solar cell grid, including battery it is characterised in that：
Silicon nitride film is provided with the surface of battery, silicon nitride film is provided with wire casing using laser technology, in wire casing, be embedded with gold
Belong to line；The Surface coating of described metal wire has nano silver film.
Described metal wire is silver wire or copper cash or aluminum steel or its alloy wire, a diameter of 10 ~ 20 m of metal wire.
The width of described wire casing is 5 ~ 15 m, and the depth of wire casing is 0.2 ~ 5 m.
The thickness of described nano silver film is 0.2 ~ 2 m.
Described nano silver film is made up of the nano-Ag particles that size distribution is 5 ~ 150nm scope.
By a diameter of 5 ~ 150nm, length is the silver wire composition of 1 ~ 10 m to described nano silver film.
Concrete preparation method is as follows：
（1）The grid lines figure by design for the silicon nitride film of the solar cell surface of silicon nitride film will be coated with using laser
Case performs etching, and exposes the surface of battery, and the wire casing width range being carved is 5 ~ 15 m, and depth is 0.2 ~ 5 m；
（2）The wire casing that the metal wire being coated with nano silver film is directed at laser ablation is sticked, and then adopts laser again by gold
Belong to wire cutting to break, that is, the gate line electrode completing battery surface is fixed；
（3）The metal wire being coated with nano silver film is welded with battery surface, the Nano Silver that metal wire is contacted with battery surface is thin
Film can melt in the presence of welding temperature so that metal wire and silicon face form good Ohmic contact.
Described step（2）In, metal wire is 1 or many and is directed at wire casing simultaneously and is pasted on battery surface.
Described step（3）In, welding procedure is infrared radiation or heat treatment, and welding temperature is 120 ~ 250 DEG C.
Described fine metal line solar cell gate application in solar cell, including monocrystalline silicon, polysilicon, non-
（Micro-）Crystal silicon, cadmium telluride, the manufacture of copper and indium gallium one or more device of tin.
Compared with the existing technology, the metal wire being coated with nano silver film, as gate electrode line, is particularly suitable for adopting the present invention
The photoelectric current of battery can be equably collected together by new thin grid line array structure very much, and internal resistance is low, efficiency high, noble metal
Materials'use is few, and battery shading-area is little, and the photoelectric transformation efficiency of battery can be substantially improved, and effectively reduces the expensive gold of electrode simultaneously
Belong to the usage amount of material and battery electrode material cost is greatly reduced.
The fine metal line of the plating nano silver film of the present invention as the gate electrode of solar cell method it is adaptable to list
Crystal silicon battery, polycrystal silicon cell, non-（Micro-）Silicon/crystalline silicon heterojunction（HIT）Battery, non-（Micro-）Polycrystal silicon film battery, CIGS thin-film
The gate electrode preparation of battery, cadmium antimonide hull cell etc., compared with the technique of existing serigraphy Ag films gate electrode, can be big
Width reduces the consumption of ag material, and is obviously improved the photoelectric transformation efficiency of battery.Simultaneously because employing low temperature sintering technology, reduce
The energy consumption of electrode manufacture so that the manufacturing cost of battery reduces further, is that the universalness of solar cell power generation technology should
With laying the foundation.
Brief description
Fig. 1 is present invention process schematic flow sheet.
Fig. 2 is present invention process flow process and structure enlarged diagram.
Fig. 3 is that typical serigraphy silver grid uses schematic diagram.
Fig. 4 uses schematic diagram for battery grid of the present invention.
Specific embodiment
Below according to accompanying drawing, the present invention is described further.
As Fig. 1, shown in Fig. 2, silicon nitride film 2 is provided with the surface of battery 1, silicon nitride film 2 adopts laser 3 work
Skill is provided with wire casing 4, is embedded with metal wire 5 in wire casing 4；The Surface coating of described metal wire 5 has nano silver film 6.
Metal wire 5 is silver wire or copper cash or aluminum steel or its alloy wire, a diameter of 10 ~ 20 m of metal wire 5.
The width of wire casing 4 is 5 ~ 15 m, and the depth of wire casing 4 is 0.2 ~ 5 m.
The thickness of nano silver film 6 is 0.2 ~ 2 m.
Nano silver film 6 is made up of the nano-Ag particles that size distribution is 5 ~ 150nm scope.
By a diameter of 5 ~ 150nm, length is the silver wire composition of 1 ~ 10 m to nano silver film 6.
Concrete preparation method is as follows：
（1）The grid lines figure by design for the silicon nitride film of the solar cell surface of silicon nitride film will be coated with using laser
Case performs etching, and exposes the surface of battery, and the wire casing width range being carved is 5 ~ 15 m, and depth is 0.2 ~ 5 m；
（2）The wire casing that the metal wire being coated with nano silver film is directed at laser ablation is sticked, and then adopts laser again by gold
Belong to wire cutting to break, that is, the gate line electrode completing battery surface is fixed；
（3）The metal wire being coated with nano silver film is welded with battery surface, the Nano Silver that metal wire is contacted with battery surface is thin
Film can melt in the presence of welding temperature so that metal wire and silicon face form good Ohmic contact.
Step（2）In, metal wire is 1 or many and is directed at wire casing simultaneously and is pasted on battery surface.
Step（3）In, welding procedure is infrared radiation or heat treatment, and welding temperature is 120 ~ 250 DEG C.
Fine metal line solar cell gate application in solar cell, including monocrystalline silicon, polysilicon, non-（Micro-）Brilliant
Silicon, cadmium telluride, the manufacture of copper and indium gallium one or more device of tin.
The gate electrode preparation process schematic diagram of the present invention is as depicted in figs. 1 and 2.With crystal silicon solar energy battery device
As a example, in Fig. 11 is battery, and 2 is silicon nitride film；Through laser beam 3 irradiate after, silicon nitride film be etched after in silicon table
Face forms wire casing 4；Then the metal wire 5 of plating nanometer silverskin is directed at wire casing 4 note attached, heated rear Nano Silver melting makes metal
Line is welded together with silicon face.As shown in Fig. 2 being coated with metal wire 5 be aligned wire casing 4 and the battery 1 surface phase of nano silver film 6
Connect, using infrared light irradiation so that metal wire 5 surface Nano Silver fusing after formed densification nano silver film 6 and with electricity
Pond 1 surface soldered forms good Ohmic contact.
The present invention includes one of silver, copper, aluminium or its alloy wire conduct because of the metal wire employing monocrystalline or polycrystalline structure
Gate electrode line is so that the electrical conductivity of gate electrode line is substantially improved.And adopt in the silver paste of serigraphy because containing non-conductive
The oxide such as particulate such as silica, bismuth oxide, boron oxide, the resistivity of the film being formed after high-temperature process is higher, such as thin
The representative value of film resistance is about 3 Ω/cm2；And the nano silver film of metal line surface coating, after infrared irridiation, can be formed
Fine and close Polycrystalline Metals Ag films, define good Ohmic contact with battery surface, such as typical resistance value be less than 1 Ω/
cm2.Therefore the Europe in the contact resistance of electrode and battery surface and conducting process can be reduced using the silver-plated film metal wire of the present invention
Nurse is lost, and can increase the photoelectric current of silion cell generation and increase the photoelectric transformation efficiency of battery（0.1-0.2%).
Compared with typical serigraphy silver grating line width 70-80 m at present, such as Fig. 3, shown in Fig. 4, the present invention is coated with
The metal wire of nano silver film, as the gate electrode line of solar cell, within live width can be controlled in 25 m, significantly reduces grid
The shading-area more than 60% of line electrode, can make photoelectric transformation efficiency improve more than 0.5%.According to being coated with nano silver film
Metal wire, can make the usage amount of ag material be reduced to more than the 60% of silk-screen printing technique；According to being coated with nano silver film
Copper lines or aluminum steel, the consumption of only a small amount of nano silver material, the consumption of more than 95% ag material can be saved.Using this
Bright technology, totally can be greatly reduced the cost of electrode of solar battery grid line material, and significantly improve the opto-electronic conversion of battery
Efficiency.
From figure 3, it can be seen that the Ag films using serigraphy are relatively wide and flat, can be by Ag films during incident light vertical irradiation
Packaged glass is reflected through transparent polymer after blocking.As shown in figure 4, the Nano Silver of the present invention is in heating or infrared light supply irradiation
One layer of fine and close nano silver film can be formed in metal line surface afterwards.Because silver nanoparticle Ag films have highest reflectivity（?
The average reflectance of 400-800nm scope>97%）, simultaneously because metal wire has the surface of cylindrical radian, when incident ray leads to
When crossing packaged glass and transparent polymer vertical irradiation, the silver surface of arc can by most of incident light press different directions reflection and
Scattering, then be irradiated to silicon face after interior surfaces of glass reflection and absorbed.Be coated with the metal wire of nano silver film reflect into
When penetrating light, change the path of reflected light, generally increased the luminous flux injecting battery, thus further increasing the light of battery
Photoelectric transformation efficiency（0.1-0.3%）.
The present invention can be prepared by traditional gate electrode line distributed architecture, and new grid line structure preparation may also be employed.Traditional
Gate electrode line can be divided into thin grid line and main gate line group technology, and thin grid line is the silver wire film of serigraphy（70-80µm）, main grid
Line is the tin plating thin slice of Copper Foil（1-2mm）.Thin grating spacing is generally 2-3mm, is welded on thin grid line surface by main gate line, will
The electric current collection that each thin grid line produces is got up, and main grid distance between centers of tracks is 30-60mm.
The metal wire being coated with nano silver film of the present invention can directly substitute the thin grid line of serigraphy, then adopts main gate line
Combination.Can also be without the structure of main gate line, only with the structure of thin grid line array, the main gate line of this structure and thin grid line phase
With, and be evenly distributed, CURRENT DISTRIBUTION can be made also uniform, be so remarkably improved the luminous flux of incident battery surface, reduce electrode
Between resistance power consumption, and improve the photoelectric transformation efficiency of battery.
The silver-plated film metal fine of the present invention, as gate electrode line, is particularly suitable for using new thin grid line array structure,
Equably the photoelectric current of battery can be collected together very much, internal resistance is low, efficiency high, precious metal material are using few, battery shading
Area is little, and the photoelectric transformation efficiency of battery can be substantially improved, and effectively reduces the usage amount of electrode precious metal material simultaneously and makes
Battery electrode material cost is greatly reduced.
The fine metal line of the plating nano silver film of the present invention as the gate electrode of solar cell method it is adaptable to list
Crystal silicon battery, polycrystal silicon cell, non-（Micro-）Silicon/crystalline silicon heterojunction（HIT）Battery, non-（Micro-）Polycrystal silicon film battery, CIGS thin-film
The gate electrode preparation of battery, cadmium antimonide hull cell etc., compared with the technique of existing serigraphy Ag films gate electrode, can be big
Width reduces the consumption of ag material, and is obviously improved the photoelectric transformation efficiency of battery.Simultaneously because employing low temperature sintering technology（<250
℃）, reduce the energy consumption of electrode manufacture so that the manufacturing cost of battery reduces further, be solar cell power generation technology
Universalness application lays the foundation.
Claims (10)
1. a kind of fine metal line solar cell grid, including battery it is characterised in that：In battery（1）Surface be provided with
Silicon nitride film（2）, silicon nitride film（2）Upper employing laser（3）Technique is provided with wire casing（4）, wire casing（4）Inside it is embedded with metal wire
（5）；Described metal wire（5）Surface coating have nano silver film（6）.
2. a kind of fine metal line solar cell grid according to claim 1 it is characterised in that：Described metal wire
（5）For silver wire or copper cash or aluminum steel or other alloy wires, metal wire（5）A diameter of 10 ~ 20 m.
3. a kind of fine metal line solar cell grid according to claim 1 it is characterised in that：Described wire casing
（4）Width be 5 ~ 15 m, wire casing（4）Depth be 0.2 ~ 5 m.
4. a kind of fine metal line solar cell grid according to claim 1 it is characterised in that：Described Nano Silver
Film（6）Thickness be 0.2 ~ 2 m.
5. a kind of fine metal line solar cell grid according to claim 1 it is characterised in that：Described Nano Silver
Film（6）It is made up of the nano-Ag particles that size distribution is 5 ~ 150nm scope.
6. a kind of fine metal line solar cell grid according to claim 1 it is characterised in that：Described Nano Silver
Film（6）By a diameter of 5 ~ 150nm, length is the silver wire composition of 1 ~ 10 m.
7. a kind of preparation method of fine metal line solar cell grid it is characterised in that：Concrete preparation method is as follows：
（1）The grid lines figure by design for the silicon nitride film of the solar cell surface of silicon nitride film will be coated with using laser
Case performs etching, and exposes the surface of battery, and the wire casing width range being carved is 5 ~ 15 m, and depth is 0.2 ~ 5 m；
（2）The wire casing that the metal wire being coated with nano silver film is directed at laser ablation is sticked, and then adopts laser again by gold
Belong to wire cutting to break, that is, the gate line electrode completing battery surface is fixed；
（3）The metal fine being coated with nano silver film is welded with battery surface, the nanometer that metal fine is contacted with battery surface
Ag films can melt in the presence of welding temperature so that metal fine and silicon face form good Ohmic contact.
8. a kind of fine metal line solar cell grid according to claim 7 preparation method it is characterised in that：Institute
The step stated（2）In, metal wire is 1 or many and is directed at wire casing simultaneously and is pasted on battery surface.
9. a kind of fine metal line solar cell grid according to claim 7 preparation method it is characterised in that：Institute
The step stated（3）In, welding procedure is infrared radiation or heat treatment, and welding temperature is 120 ~ 250 DEG C.
10. a kind of fine metal line solar cell grid according to claim 1 it is characterised in that：Described is fine
Metal wire solar cell gate application in solar cell, including monocrystalline silicon, polysilicon, non-（Micro-）Crystal silicon, cadmium telluride, copper and indium
The manufacture of gallium one or more device of tin.
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| CN109763153A (en) * | 2019-02-25 | 2019-05-17 | 常州安澜电气有限公司 | A kind of solar battery grid material and its manufacturing process |
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN113247859A (en) * | 2021-05-13 | 2021-08-13 | 北京理工大学 | Method for preparing crack type nano gap structure based on femtosecond laser |
| CN113306320A (en) * | 2021-05-19 | 2021-08-27 | 东北大学 | Solar cell metal grid spray printing forming method and device for laser in-situ film opening |
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| CN109763153A (en) * | 2019-02-25 | 2019-05-17 | 常州安澜电气有限公司 | A kind of solar battery grid material and its manufacturing process |
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| CN113247859A (en) * | 2021-05-13 | 2021-08-13 | 北京理工大学 | Method for preparing crack type nano gap structure based on femtosecond laser |
| CN113306320A (en) * | 2021-05-19 | 2021-08-27 | 东北大学 | Solar cell metal grid spray printing forming method and device for laser in-situ film opening |
| CN113306320B (en) * | 2021-05-19 | 2022-06-17 | 东北大学 | Solar cell metal grid spray printing forming method and device for laser in-situ film opening |
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