CN106409930B - Fine metal wire solar cell grid and preparation method thereof - Google Patents
Fine metal wire solar cell grid and preparation method thereof Download PDFInfo
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- CN106409930B CN106409930B CN201610963416.2A CN201610963416A CN106409930B CN 106409930 B CN106409930 B CN 106409930B CN 201610963416 A CN201610963416 A CN 201610963416A CN 106409930 B CN106409930 B CN 106409930B
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- 229910001111 Fine metal Inorganic materials 0.000 title claims abstract description 9
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims description 28
- 239000004332 silver Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 229910000510 noble metal Inorganic materials 0.000 abstract description 6
- 239000007769 metal material Substances 0.000 abstract description 4
- 239000007772 electrode material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 58
- 239000000463 material Substances 0.000 description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 description 13
- 238000007650 screen-printing Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000010248 power generation Methods 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, in particular to a micro metal wire solar cell grid and a preparation method thereof. The utility model provides a fine metal line solar cell grid, includes the battery, its characterized in that: a silicon nitride film is arranged on the surface of the battery, a wire groove is arranged on the silicon nitride film by adopting a laser process, and a metal wire is embedded in the wire groove; the surface of the metal wire is coated with a nano silver film. Compared with the prior art, the metal wire plated with the nano silver film is used as an electrode grid wire, is particularly suitable for adopting a novel fine grid wire array structure, can very uniformly collect the photocurrent of the battery together, has low internal resistance, high efficiency and little noble metal material use, has small shading area, can greatly improve the photoelectric conversion efficiency of the battery, and simultaneously effectively reduces the use amount of the electrode noble metal material so as to greatly reduce the cost of the electrode material of the battery.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a micro metal wire solar cell grid and a preparation method thereof.
Background
As the earth's climate warms, the human society's petrochemical-based structure will gradually be replaced by clean-energy-based structure, and the utilization of solar energy in clean energy will ultimately dominate the energy field. The solar energy is mainly utilized to convert energy in the forms of photo-thermal and photovoltaic, wherein photovoltaic power generation is to obtain electric energy by photoelectric conversion with a solar cell as a core. The solar cell mainly comprises crystalline silicon and a thin film cell, wherein the crystalline silicon solar cell dominates the photovoltaic power generation field due to wide material sources and mature manufacturing process, and occupies more than 90% of market share; the thin film battery mainly comprises amorphous (micro) silicon, copper indium gallium selenide, cadmium telluride and other compound semiconductor thin film solar cells, and the thin film battery also occupies a certain market share due to the characteristics of light weight and thin thickness and the like. At present, the power generation cost of the solar cell is still higher than that of the traditional petrochemical fuel, and the solar cell technology with high efficiency and low cost needs to be further developed, so that the cost of photovoltaic power generation can compete with petrochemical energy and can be applied on a large scale. Crystalline silicon solar cells can be classified into polycrystalline silicon and monocrystalline silicon cells, and with technological progress, the photoelectric conversion efficiency of crystalline silicon cell products has exceeded 20% and the laboratory efficiency of monocrystalline silicon cells has exceeded 25% while the cost of silicon materials and cell fabrication has continuously decreased. In the manufacture of various solar cells, the cost is reduced mainly from the energy consumption and material links of the manufacture, and the photoelectric conversion efficiency of the cells is improved from the structural optimization of devices. Taking a crystalline silicon solar cell as an example, except for energy consumption of each manufacturing process link, the most proportion of the cell materials mainly comprises silicon chips and electrode grid line noble metal silver materials of the cell. The silicon wafer cost is mainly reduced by reducing the thickness of the silicon wafer (such as from 200 mu m to 100 mu m), so that the consumption of materials is reduced; the electrode grid line of the battery is mainly formed by printing silver paste on the surface of silicon into a film through a screen printing process and then sintering at a high temperature (800 ℃) to form a conductive electrode. Typical widths of surface electrode grid lines of crystalline silicon solar cells and thin film solar cell products mainly adopting screen printing technology at present are 70-80 mu m. In order to reduce the dosage of silver materials and reduce the shading area of the electrode grid line at the same time so as to improve the efficiency of the battery, the newly developed screen printing technology can print the grid line width to about 40-50 mu m, and if the width is further reduced, the performances of uniformity, conductivity, yield and the like of the grid line process are affected, so that the large-scale production is not easy to realize. The method of reducing the width of the silver electrode gate line by using the screen printing technique to reduce the cost is limited. The method for reducing the width of the silver electrode grid line is mainly to print nano silver ink on the surface of a battery by adopting an ink-jet printing process, and then to obtain the silver grid line with the line width of about 20-30 mu m after heat treatment, but the problems of high cost of the nano silver ink, high production efficiency and consistency of ink-jet printing and the like are required to be researched and solved, and the technology is difficult to be industrially applied in a laboratory research stage. In addition, the cost of the electrode grid line is reduced by adopting a process capable of replacing noble metal silver materials, such as an electroplating copper process, mainly comprising the steps of firstly electroplating a nickel film as a barrier layer after etching a film layer of silicon nitride and the like on the surface of a silicon battery by laser, and then adopting an electroplating or chemical plating process to prepare the copper electrode grid line, wherein the process relates to an electroplating (chemical plating) process and is easy to cause pollution; meanwhile, the processes of conductivity, consistency, adhesiveness and the like of the prepared copper electrode grid line are further researched. The electroplating process of the grid electrode of the solar cell is also in the laboratory research stage at present, and whether the large-scale industrial application can be realized or not needs further verification.
Disclosure of Invention
The invention adopts a metal wire plated with a nano silver film as an electrode grid line of a battery to overcome the defects of the prior art, can replace the prior screen printing silver electrode grid line, can greatly reduce the dosage and cost of silver materials, and can increase the conductivity of the electrode grid line; the silver-plated fine metal wire can increase the reflection and scattering of incident light to improve the luminous flux irradiated to the surface of the battery, and the electrode shading area is reduced due to the reduction of the width of the grid wire, so that the photoelectric conversion efficiency of the battery can be remarkably improved.
In order to achieve the above purpose, a micro metal wire solar cell grid is designed, which comprises a cell and is characterized in that: a silicon nitride film is arranged on the surface of the battery, a wire groove is arranged on the silicon nitride film by adopting a laser process, and a metal wire is embedded in the wire groove; the surface of the metal wire is coated with a nano silver film.
The metal wire is a silver wire, a copper wire, an aluminum wire or an alloy wire thereof, and the diameter of the metal wire is 10-20 mu m.
The width of wire casing be 5~15 mu m, the degree of depth of wire casing is 0.2~5 mu m.
The thickness of the nano silver film is 0.2-2 mu m.
The nano silver film is composed of nano silver particles with the particle size distribution in the range of 5-150 nm.
The nano silver film is composed of silver wires with diameters of 5-150 nm and lengths of 1-10 mu m.
The preparation method comprises the following steps:
(1) Etching the silicon nitride film on the surface of the solar cell plated with the silicon nitride film by adopting laser according to a designed grid line pattern to expose the surface of the cell, wherein the width range of the etched wire groove is 5-15 mu m, and the depth is 0.2-5 mu m;
(2) The metal wire plated with the nano silver film is aligned with the wire groove etched by laser for application, and then the metal wire is cut by laser, so that the grid electrode on the surface of the battery is fixed;
(3) And welding the metal wire plated with the nano silver film with the surface of the battery, wherein the nano silver film contacted with the surface of the battery is melted under the action of the welding temperature, so that the metal wire and the surface of the silicon form good ohmic contact.
In the step (2), 1 or more metal wires are simultaneously aligned with the wire grooves and are applied to the surface of the battery.
In the step (3), the welding process is infrared irradiation or heat treatment, and the welding temperature is 120-250 ℃.
The micro metal wire solar cell grid is applied to solar cells and comprises the manufacture of one or more devices of monocrystalline silicon, polycrystalline silicon, non (micro) crystalline silicon, cadmium telluride and copper indium gallium tin.
Compared with the prior art, the metal wire plated with the nano silver film is used as an electrode grid wire, is particularly suitable for adopting a novel fine grid wire array structure, can very uniformly collect the photocurrent of the battery, has low internal resistance, high efficiency and small shading area of the battery, can greatly improve the photoelectric conversion efficiency of the battery, and simultaneously effectively reduces the use amount of the electrode noble metal material so as to greatly reduce the electrode material cost of the battery.
The method for plating the micro metal wire of the nano silver film as the gate electrode of the solar cell is suitable for preparing the gate electrode of a monocrystalline silicon cell, a polycrystalline silicon cell, a non (micro) crystalline silicon Heterojunction (HIT) cell, a non (micro) crystalline silicon film cell, a copper indium gallium selenium film cell, a cadmium antimonide film cell and the like, and compared with the prior process for screen printing the silver film gate electrode, the method can greatly reduce the consumption of silver materials and obviously improve the photoelectric conversion efficiency of the cell. Meanwhile, the low-temperature sintering process is adopted, so that the energy consumption for manufacturing the electrode is reduced, the manufacturing cost of the battery is further reduced, and a foundation is laid for the popularization and application of the solar battery power generation technology.
Drawings
FIG. 1 is a schematic diagram of the process flow of the present invention.
FIG. 2 is an enlarged schematic view of the process flow and structure of the present invention.
Fig. 3 is a schematic diagram of a typical screen printed silver grid use.
Fig. 4 is a schematic view of a battery grid according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1 and 2, a silicon nitride film 2 is arranged on the surface of a battery 1, a wire groove 4 is arranged on the silicon nitride film 2 by adopting a laser 3 process, and a metal wire 5 is embedded in the wire groove 4; the surface of the metal wire 5 is coated with a nano silver film 6.
The metal wire 5 is a silver wire, a copper wire, an aluminum wire or an alloy wire, and the diameter of the metal wire 5 is 10-20 mu m.
The width of the wire groove 4 is 5-15 mu m, and the depth of the wire groove 4 is 0.2-5 mu m.
The thickness of the nano silver film 6 is 0.2-2 mu m.
The nano silver film 6 is composed of nano silver particles with the particle size distribution in the range of 5-150 nm.
The nano silver film 6 is composed of silver wires with diameters of 5-150 nm and lengths of 1-10 mu m.
The preparation method comprises the following steps:
(1) Etching the silicon nitride film on the surface of the solar cell plated with the silicon nitride film by adopting laser according to a designed grid line pattern to expose the surface of the cell, wherein the width range of the etched wire groove is 5-15 mu m, and the depth is 0.2-5 mu m;
(2) The metal wire plated with the nano silver film is aligned with the wire groove etched by laser for application, and then the metal wire is cut by laser, so that the grid electrode on the surface of the battery is fixed;
(3) And welding the metal wire plated with the nano silver film with the surface of the battery, wherein the nano silver film contacted with the surface of the battery is melted under the action of the welding temperature, so that the metal wire and the surface of the silicon form good ohmic contact.
In the step (2), 1 or more metal wires are simultaneously aligned with the wire grooves and are applied to the surface of the battery.
In the step (3), the welding process is infrared irradiation or heat treatment, and the welding temperature is 120-250 ℃.
The micro metal wire solar cell grid is applied to the manufacture of one or more devices of solar cells, including monocrystalline silicon, polycrystalline silicon, non (micro) crystalline silicon, cadmium telluride and copper indium gallium tin.
The process of the gate electrode preparation process of the present invention is schematically shown in fig. 1 and 2. Taking a crystalline silicon solar cell device as an example, 1 in fig. 1 is a cell, and 2 is a silicon nitride film; after being irradiated by the laser beam 3, the silicon nitride film is etched to form a wire groove 4 on the silicon surface; then the metal wire 5 plated with the nano silver film is attached to the wire slot 4, and the nano silver is melted after heating so that the metal wire and the silicon surface are welded together. As shown in fig. 2, the metal wire 5 plated with the nano silver film 6 is connected with the surface of the battery 1 by aligning with the wire slot 4, and infrared light irradiation is adopted, so that the nano silver on the surface of the metal wire 5 is melted to form a compact nano silver film 6 and is welded with the surface of the battery 1 to form good ohmic contact.
The invention adopts the metal wire with single crystal or polycrystal structure, which comprises one of silver, copper and aluminum or the alloy wire thereof as the electrode grid wire, so that the conductivity of the electrode grid wire is greatly improved. The silver paste by screen printing contains non-conductive oxide such as silicon oxide, bismuth oxide, boron oxide and other particles, so that the resistivity of the formed film is high after high-temperature treatment, for example, the typical value of the film resistance is about 3 mu omega/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the After the nano silver film coated on the surface of the metal wire is irradiated by infrared rays, a compact polycrystalline metal silver film can be formed, and good ohmic contact is formed between the metal wire and the surface of the battery, for example, typical resistance value is less than 1 mu omega/cm 2 . Therefore, the silver-plated film metal wire can reduce the contact resistance between the electrode and the surface of the battery and ohmic loss in the conducting process, and can increase the photocurrent generated by the silicon battery to increase the photoelectric conversion efficiency (0.1-0.2%) of the battery.
Compared with the width of the typical screen printing silver grid line at present, as shown in fig. 3 and 4, the metal line plated with the nano silver film is used as an electrode grid line of a solar cell, the line width can be controlled within 25 mu m, the shading area of a grid line electrode is obviously reduced by more than 60%, and the photoelectric conversion efficiency can be improved by more than 0.5%. If the metal wire plated with the nano silver film is adopted, the use amount of the silver material can be reduced to more than 60% of the screen printing process; if the metal copper wire or the aluminum wire plated with the nano silver film is adopted, only a small amount of nano silver material is consumed, and the consumption of the silver material can be saved by more than 95 percent. By adopting the technology of the invention, the cost of the electrode grid line material of the solar cell can be greatly reduced as a whole, and the photoelectric conversion efficiency of the cell can be obviously improved.
As can be seen from fig. 3, the silver film using screen printing is relatively wide and flat, and the incident light is blocked by the silver film and reflected out of the package glass through the transparent polymer when it is irradiated vertically. As shown in fig. 4, the nano silver of the present invention forms a dense nano silver film on the surface of the metal wire after being heated or irradiated by an infrared light source. Because the silver nano silver film has the highest reflectivity (average reflectivity in the range of 400-800nm is more than 97%), and because the metal wire has a surface with a cylindrical radian, when incident light rays vertically irradiate through the packaging glass and the transparent polymer, most of the incident light rays are reflected and scattered by the arc-shaped silver surface in different directions, and then are reflected by the inner surface of the glass, irradiated to the silicon surface and absorbed. When the metal wire plated with the nano silver film reflects incident light, the path of the reflected light is changed, and the luminous flux of the incident light into the battery is generally increased, so that the photoelectric conversion efficiency (0.1-0.3%) of the battery is further improved.
The invention can be prepared according to the traditional electrode grid line distribution structure, and can also be prepared by adopting a novel grid line structure. The traditional electrode grid line can be divided into a thin grid line and main grid line combined process, wherein the thin grid line is a screen-printed silver line film (70-80 mu m), and the main grid line is a copper foil tinned sheet (1-2 mm). The distance between the fine grid lines is generally 2-3mm, the current generated by each fine grid line is collected through welding the main grid lines on the surfaces of the fine grid lines, and the distance between the main grid lines is 30-60mm.
The metal wire plated with the nano silver film can directly replace a screen printed fine grid line, and then the combination of main grid lines is adopted. The structure of the main grid line is not needed, and only the structure of the thin grid line array is adopted, so that the main grid line of the structure is identical to the thin grid line and is uniformly distributed, and the current distribution is uniform, so that the luminous flux incident on the surface of the battery can be obviously improved, the resistance power consumption between electrodes is reduced, and the photoelectric conversion efficiency of the battery is improved.
The silver-plated film metal thin wire is particularly suitable for adopting a novel fine grid line array structure, can very uniformly collect photocurrent of a battery, has low internal resistance, high efficiency and small shading area of the battery, can greatly improve the photoelectric conversion efficiency of the battery, and simultaneously effectively reduces the use amount of the electrode noble metal material so as to greatly reduce the cost of the electrode material of the battery.
The method for plating the micro metal wire of the nano silver film as the gate electrode of the solar cell is suitable for preparing the gate electrode of a monocrystalline silicon cell, a polycrystalline silicon cell, a non (micro) crystalline silicon Heterojunction (HIT) cell, a non (micro) crystalline silicon film cell, a copper indium gallium selenium film cell, a cadmium antimonide film cell and the like, and compared with the prior process for screen printing the silver film gate electrode, the method can greatly reduce the consumption of silver materials and obviously improve the photoelectric conversion efficiency of the cell. Meanwhile, the low-temperature sintering process (< 250 ℃) is adopted, so that the energy consumption for manufacturing the electrode is reduced, the manufacturing cost of the battery is further reduced, and a foundation is laid for the popularization and application of the solar battery power generation technology.
Claims (6)
1. The utility model provides a fine metal line solar cell grid, includes the battery, its characterized in that: a silicon nitride film (2) is arranged on the surface of the battery (1), a wire groove (4) is arranged on the silicon nitride film (2) by adopting a laser (3) process, and a metal wire (5) is embedded in the wire groove (4); the surface of the metal wire (5) is coated with a nano silver film (6); the metal wire (5) is a silver wire or a copper wire or an aluminum wire or other alloy wires, and the diameter of the metal wire (5) is 10-20 mu m;
the width of the wire groove (4) is 5-15 mu m, and the depth of the wire groove (4) is 0.2-5 mu m;
the thickness of the nano silver film (6) is 0.2-2 mu m;
the nano silver film (6) consists of nano silver particles with the granularity distribution of 5-150 nm.
2. The fine metal line solar cell grid according to claim 1, wherein: the nano silver film (6) consists of silver wires with the diameter of 5-150 nm and the length of 1-10 mu m.
3. The fine metal line solar cell grid according to claim 1, wherein: the micro metal wire solar cell grid is applied to solar cells and comprises the manufacture of one or more devices of monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride and copper indium gallium tin.
4. The method for manufacturing a micro metal wire solar cell grid electrode according to claim 1, wherein the method comprises the following steps: the preparation method comprises the following steps:
(1) Etching the silicon nitride film on the surface of the solar cell plated with the silicon nitride film by laser according to the designed grid line pattern to expose the surface of the cell, wherein the width of the etched wire groove is 5-15 mu m,
the depth is 0.2-5 mu m;
(2) The metal wire plated with the nano silver film is aligned with the wire groove etched by laser for application, and then the metal wire is cut by laser, so that the grid electrode on the surface of the battery is fixed;
(3) And welding the metal thin wire plated with the nano silver film with the surface of the battery, wherein the nano silver film in contact with the surface of the battery is melted under the action of the welding temperature, so that the metal thin wire and the surface of the silicon form good ohmic contact.
5. The method for manufacturing a fine metal line solar cell grid according to claim 4, wherein: in the step (2), 1 or more metal wires are simultaneously aligned with the wire grooves and are applied to the surface of the battery.
6. The method for manufacturing a fine metal line solar cell grid according to claim 4, wherein: in the step (3), the welding process is infrared irradiation or heat treatment, and the welding temperature is 120-250 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610963416.2A CN106409930B (en) | 2016-11-04 | 2016-11-04 | Fine metal wire solar cell grid and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610963416.2A CN106409930B (en) | 2016-11-04 | 2016-11-04 | Fine metal wire solar cell grid and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409930A CN106409930A (en) | 2017-02-15 |
| CN106409930B true CN106409930B (en) | 2024-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201610963416.2A Active CN106409930B (en) | 2016-11-04 | 2016-11-04 | Fine metal wire solar cell grid and preparation method thereof |
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| CN109763153B (en) * | 2019-02-25 | 2021-01-22 | 常州安澜电气有限公司 | Solar cell grid electrode material and manufacturing process thereof |
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN113247859B (en) * | 2021-05-13 | 2022-07-15 | 北京理工大学 | Method for preparing crack type nano gap structure based on femtosecond laser |
| CN113306320B (en) * | 2021-05-19 | 2022-06-17 | 东北大学 | Solar cell metal grid spray printing forming method and device for laser in-situ film opening |
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| CN105489784A (en) * | 2015-12-09 | 2016-04-13 | 苏州大学 | Fabrication method for flexible conductive electrode, electrode fabricated with method and application of electrode |
| CN206179877U (en) * | 2016-11-04 | 2017-05-17 | 上海纳晶科技有限公司 | Fine metal wire solar cell grid |
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| JP2009129552A (en) * | 2007-11-20 | 2009-06-11 | Konica Minolta Holdings Inc | Dye-sensitized solar cell |
| CN102214729A (en) * | 2010-04-09 | 2011-10-12 | 陕西众森电能科技有限公司 | Front electrode structure of solar battery and manufacturing method of front electrode structure |
| CN105489784A (en) * | 2015-12-09 | 2016-04-13 | 苏州大学 | Fabrication method for flexible conductive electrode, electrode fabricated with method and application of electrode |
| CN206179877U (en) * | 2016-11-04 | 2017-05-17 | 上海纳晶科技有限公司 | Fine metal wire solar cell grid |
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