CN106409953B - Solar cell coated copper wire grid current collector structure and preparation method - Google Patents
Solar cell coated copper wire grid current collector structure and preparation method Download PDFInfo
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- CN106409953B CN106409953B CN201610963396.9A CN201610963396A CN106409953B CN 106409953 B CN106409953 B CN 106409953B CN 201610963396 A CN201610963396 A CN 201610963396A CN 106409953 B CN106409953 B CN 106409953B
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- Prior art keywords
- copper wire
- coated copper
- current collector
- battery
- solar cell
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000004907 flux Effects 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 16
- 239000011889 copper foil Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cells, in particular to a solar cell current collector structure and a preparation method thereof. The utility model provides a solar cell coating film copper line bars electric current collector structure, includes the battery, its characterized in that: the surface of the battery is transversely provided with a plurality of gate lines, the surface of the battery is vertically provided with a plurality of coated copper wires, the surfaces of the gate lines and the coated copper wires are provided with transparent polymers, and the upper layer of the transparent polymers is provided with protective glass; the coated copper wire is a tinned film or a nano silver film coated on the surface of the copper wire. Compared with the prior art, the cylindrical thin copper wire with the coating can reduce the shading area of incident light, meanwhile, the radian surface with high reflection can reflect the incident light at different angles, and then the light can be incident to the surface of the battery again to be absorbed through the reflection of the inner surface of the packaging glass, so that the incident light flux of the surface of the battery can be improved, and the photoelectric conversion efficiency of the battery can be effectively improved by more than 0.3%.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a solar cell current collector structure and a preparation method thereof.
Background
With the rise of global air temperature and the increase of environmental pollution, the application of fossil fuels including coal, petroleum, natural gas and the like as main energy sources is increasingly limited, and the reserves of fossil fuels are gradually exhausted with the increase of the usage. The use of renewable energy, especially solar energy, will be the dominant clean energy source. Solar cells have been rapidly developed over the past decade as core devices and applications for photovoltaic power generation. At present, the cost of photovoltaic power generation is higher than the cost of traditional petrochemical energy, so that the photoelectric conversion efficiency of a solar cell is improved as soon as possible, the manufacturing cost of devices is reduced, the photovoltaic power generation can compete with the petrochemical energy earlier, and the development of clean energy technology is promoted.
Currently, solar cell products mainly include crystalline silicon including monocrystalline and polycrystalline silicon and thin films including amorphous silicon, cadmium telluride, copper indium gallium tin and other cells. The cell structure is a semiconductor photodiode with a P-N junction, and photon energy of sunlight is mainly converted into electric energy through photo-generated electrons, namely a photovoltaic effect. The P-N junction of the battery generates current and then is converged to a collector (main grid line) through a grid electrode (thin grid line) on the surface of the battery to be output. At present, a screen printing process is mainly adopted for preparing a silver film electrode grid line, and then a copper foil belt with a tin plated surface is used as a current collector to be welded on the silver film electrode grid line. Typical silver grid line width is 70-80 mu m, line spacing is 2-3mm, copper collector foil strip width is 1-2mm, and spacing is 30-100mm, so that shading area of grid and collector on the surface of the battery is larger, and photoelectric conversion efficiency of the battery is reduced. The design and structure of the grid and the collector are important to the improvement of the photoelectric efficiency of the solar cell. If the shading area of the electrode on the surface of the battery can be reduced under the condition of not influencing current transmission, the luminous flux of the incident battery can be increased, so that the photoelectric conversion efficiency of the battery is effectively improved.
Disclosure of Invention
The invention provides a solar cell coated copper wire grid current collector structure and a preparation method thereof, which aim to overcome the defects in the prior art, wherein a cylindrical thin copper wire with a coating can reduce the shading area of incident light, meanwhile, a high-reflection radian surface can reflect the incident light at different angles, and then the reflection of the inner surface of packaging glass can lead light to be incident to the surface of a cell again to be absorbed, so that the incident luminous flux of the surface of the cell can be improved, and the photoelectric conversion efficiency of the cell can be effectively improved by more than 0.3%.
In order to achieve the above purpose, a solar cell coated copper wire grid current collector structure is designed, which comprises a cell and is characterized in that: the surface of the battery is transversely provided with a plurality of gate lines, the surface of the battery is vertically provided with a plurality of coated copper wires, the surfaces of the gate lines and the coated copper wires are provided with transparent polymers, and the upper layer of the transparent polymers is provided with protective glass; the coated copper wire is a tinned film or a nano silver film coated on the surface of the copper wire.
The coated copper wires and the gate wires are mutually perpendicular.
The diameter of the copper wire in the coated copper wire is 100-500 mu m.
The thickness of the tinning film is 0.5-10 mu m.
The thickness of the nano silver film is 0.5-10 mu m, and the nano silver film is composed of nano silver particles with the particle size distribution in the range of 5-150 nm.
The preparation method comprises the following steps:
(1) The method comprises the steps of (1) taking a coated copper wire as a current collector to be attached to the surface of a solar cell or the back of the cell of an existing grid line, wherein the coated copper wire is perpendicular to the grid line;
(2) And welding the coated copper wire and the grid wire together by adopting an infrared irradiation or laser welding or spot welding process, wherein the welding temperature is 150-250 ℃.
The coated copper wire grid current collector is applied to manufacturing of one or more devices of single crystal silicon, polycrystalline silicon, amorphous silicon, cadmium telluride and copper indium gallium tin.
Compared with the prior art, the invention provides the solar cell coated copper wire grid current collector structure and the preparation method, wherein the cylindrical thin copper wire with the coating can reduce the shading area of incident light, meanwhile, the high-reflection radian surface can reflect the incident light at different angles, and the reflection of the inner surface of the packaging glass can enable light to be incident to the surface of the cell again and absorbed, so that the incident luminous flux on the surface of the cell can be improved, and the photoelectric conversion efficiency of the cell can be effectively improved by more than 0.3%.
The coated copper wires are used as current collectors of the gate electrodes, can be distributed into 3-30 groups, have the interval of 5-50mm, can reduce interface resistance of contact between electrodes, reduce power consumption and obtain more uniform and efficient current collection efficiency.
The coated copper wire is used as a current collector of the gate electrode, can be used as a front electrode and a back electrode of the battery, and can be used as a series and parallel lead wire between the batteries when the battery module is packaged.
Drawings
Fig. 1 is a top view of the structure of the present invention.
Fig. 2 is an enlarged front view of the structure of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1 and 2, the surface of a battery 1 is transversely provided with a plurality of gate lines 2, the surface of the battery 1 is vertically provided with a plurality of coated copper wires 3, the surfaces of the gate lines 2 and the coated copper wires 3 are provided with transparent polymers 4, and the upper layer of the transparent polymers 4 is provided with protective glass 5; the coated copper wire 3 is a tinned film or a nano silver film coated on the surface of the copper wire.
The coated copper wire 3 and the grid wire 2 are mutually perpendicular.
The diameter of the copper wire in the coated copper wire 3 is 100-500 mu m.
The thickness of the tinning film is 0.5-10 mu m.
The thickness of the nano silver film is 0.5-10 mu m, and the nano silver film consists of nano silver particles with the particle size distribution in the range of 5-150 nm.
The preparation method comprises the following steps:
(1) The method comprises the steps of (1) taking a coated copper wire as a current collector to be attached to the surface of a solar cell or the back of the cell of an existing grid line, wherein the coated copper wire is perpendicular to the grid line;
(2) And welding the coated copper wire and the grid wire together by adopting an infrared irradiation or laser welding or spot welding process, wherein the welding temperature is 150-250 ℃.
The coated copper wire grid current collector is applied to the manufacture of one or more devices of single crystal silicon, polycrystalline silicon, amorphous silicon, cadmium telluride and copper indium gallium tin.
After the current collector of the coated copper wire replaces the traditional tin-plated copper foil belt, on one hand, the light shielding area of incident light can be reduced due to the smaller diameter of the copper wire (less than 500 mu m); on the other hand, because the surface of the cylindrical copper wire has radian, after the cylindrical copper wire is assembled into a module, the tin film or the silver film plated on the surface of the copper wire can reflect incident light at different angles, and then the light can be incident on the surface of the battery again to be absorbed through the reflection of the inner surface of the packaging glass, so that the incident light flux of the surface of the battery can be further improved. By combining the two effects, the photoelectric conversion efficiency of the battery can be effectively improved by 0.3-0.6% after the thin copper wire current collector with the film coating replaces a tinned copper foil belt.
Taking crystalline silicon solar cells as an example, the metallization electrode on the surface of a typical cell has a gate linewidth of 1.5mm and a total width of 4.5mm; the diameter of the coated copper wire is 0.3mm, the total width is 1.5mm, the shading area of the electrode adopting the structure is smaller, and the current collecting efficiency is higher. The invention increases the number of the collectors, so that the current distribution is more uniform, the number of the silver grid lines can be reduced, and the use amount of silver materials is reduced, thereby reducing the manufacturing cost of the battery. For standard silicon solar cells with dimensions 156mm by 156mm, the current collectors of conventional tin-plated copper foil with gate electrodes can generally be distributed in groups 2-3; the coated copper wire can be used as a current collector of a gate electrode and can be distributed into 3-30 groups, so that the interface resistance of contact between electrodes can be effectively reduced, the power consumption is reduced, more uniform and efficient current collection efficiency is obtained, and the photoelectric conversion efficiency of a battery is improved.
When the solar cell is applied, a plurality of cell devices are assembled in series and parallel to form a module. When the batteries are assembled into a module, the circuit collectors of the batteries are required to be connected in series and in parallel, and are assembled with packaging protective glass and an aluminum frame substrate through transparent polymers (EVA or PEO), a typical unit electrode structure adopts a tinned copper foil belt as a current collector, for example, the width is 1.5mm, incident light is almost totally blocked on the surface of the tinned copper foil and reflected along an original path, the incident light cannot be absorbed by the batteries, and the photoelectric conversion efficiency of the batteries is low; by adopting the structure of the invention, the diameter of the coated copper wire is 0.3mm, and compared with a tinned copper foil belt, the electrode width can be reduced by 60-80%, so that most of incident light 6 can be directly irradiated to the surface of the battery and absorbed. Meanwhile, due to the reflection of the arc-shaped surface of the tin plating or silver film, a part of incident light 6 incident to the surface of the coated copper wire 3 changes direction through the reflection of the film surface, and then the light rays irradiate to the surface of the battery 1 through the reflection of the inner surface of the protective glass 5 to be absorbed, so that the total luminous flux of the incident battery is increased, and the photoelectric conversion efficiency of the battery is improved.
The structure and the manufacturing method of the coated copper wire serving as the grid current collector of the solar cell can be applied to the grid current collector of the surface of the solar cell of which crystalline silicon comprises monocrystalline and polycrystalline solar cells and thin films comprise amorphous silicon, cadmium telluride, copper indium gallium tin and the like, overcome the defect of large shading area of the traditional tinned copper foil belt, increase incident luminous flux and obviously improve the photoelectric conversion efficiency of the cell.
Claims (5)
1. The utility model provides a solar cell coating film copper line bars electric current collector structure, includes the battery, its characterized in that: a plurality of gate lines (2) are transversely arranged on the surface of the battery (1), a plurality of coated copper wires (3) are vertically arranged on the surface of the battery (1), transparent polymers (4) are arranged on the surfaces of the gate lines (2) and the coated copper wires (3), and protective glass (5) is arranged on the upper layer of the transparent polymers (4); the coated copper wire (3) is a surface coated tin-plated film or a nano silver film of the copper wire;
the diameter of the copper wire in the coated copper wire (3) is 100-500 mu m;
the thickness of the nano silver film is 0.5-10 mu m, and the nano silver film consists of nano silver particles with the granularity distribution in the range of 5-150 nm.
2. The solar cell coated copper wire gate current collector structure of claim 1, wherein: the coated copper wires (3) and the grid wires (2) are mutually perpendicular.
3. The solar cell coated copper wire gate current collector structure of claim 1, wherein: the thickness of the tinning film is 0.5-10 mu m.
4. The solar cell coated copper wire gate current collector structure of claim 1, wherein: the coated copper wire grid current collector is applied to manufacturing of one or more devices of single crystal silicon, polycrystalline silicon, amorphous silicon, cadmium telluride and copper indium gallium tin.
5. The method for preparing the solar cell coated copper wire grid current collector structure according to claim 1, wherein the method comprises the following steps: the preparation method comprises the following steps:
(1) The method comprises the steps of (1) taking a coated copper wire as a current collector to be attached to the surface of a solar cell or the back of the cell of an existing grid line, wherein the coated copper wire is perpendicular to the grid line;
(2) Welding the coated copper wire and the grid wire together by adopting an infrared irradiation or laser welding or spot welding process, wherein the welding temperature is 150-250 ℃;
the coated copper wire (3) is a surface coated tin-plated film or a nano silver film of the copper wire;
the diameter of the copper wire in the coated copper wire (3) is 100-500 mu m;
the thickness of the nano silver film is 0.5-10 mu m, and the nano silver film consists of nano silver particles with the granularity distribution in the range of 5-150 nm.
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CN201610963396.9A CN106409953B (en) | 2016-11-04 | 2016-11-04 | Solar cell coated copper wire grid current collector structure and preparation method |
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CN201610963396.9A CN106409953B (en) | 2016-11-04 | 2016-11-04 | Solar cell coated copper wire grid current collector structure and preparation method |
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CN106409953B true CN106409953B (en) | 2024-03-29 |
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CN109273548A (en) * | 2018-10-16 | 2019-01-25 | 广东尚瑞新材料有限公司 | A kind of photovoltaic module reflective membrane |
CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
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JP2005085924A (en) * | 2003-09-08 | 2005-03-31 | Sanyo Electric Co Ltd | Photovoltaic device and its manufacturing method |
JP2010123675A (en) * | 2008-11-18 | 2010-06-03 | Fuji Electric Holdings Co Ltd | Thin-film solar cell, and method of manufacturing the same |
CN102737847A (en) * | 2011-04-11 | 2012-10-17 | 中国科学院物理研究所 | Light collecting device for a sensitized solar battery |
CN104201227A (en) * | 2014-09-24 | 2014-12-10 | 电子科技大学 | Silicon solar cell and preparation method thereof |
CN105789345A (en) * | 2016-04-28 | 2016-07-20 | 泰州乐叶光伏科技有限公司 | Front side electrode structure of solar cell and manufacturing method thereof |
CN206179884U (en) * | 2016-11-04 | 2017-05-17 | 上海纳晶科技有限公司 | Solar cell coating film copper wiregrating current collection utmost point structure |
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- 2016-11-04 CN CN201610963396.9A patent/CN106409953B/en active Active
Patent Citations (6)
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JP2005085924A (en) * | 2003-09-08 | 2005-03-31 | Sanyo Electric Co Ltd | Photovoltaic device and its manufacturing method |
JP2010123675A (en) * | 2008-11-18 | 2010-06-03 | Fuji Electric Holdings Co Ltd | Thin-film solar cell, and method of manufacturing the same |
CN102737847A (en) * | 2011-04-11 | 2012-10-17 | 中国科学院物理研究所 | Light collecting device for a sensitized solar battery |
CN104201227A (en) * | 2014-09-24 | 2014-12-10 | 电子科技大学 | Silicon solar cell and preparation method thereof |
CN105789345A (en) * | 2016-04-28 | 2016-07-20 | 泰州乐叶光伏科技有限公司 | Front side electrode structure of solar cell and manufacturing method thereof |
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