WO2008089657A1 - Solar cell and method for reducing the serial resistance of solar cells - Google Patents

Solar cell and method for reducing the serial resistance of solar cells Download PDF

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Publication number
WO2008089657A1
WO2008089657A1 PCT/CN2008/000127 CN2008000127W WO2008089657A1 WO 2008089657 A1 WO2008089657 A1 WO 2008089657A1 CN 2008000127 W CN2008000127 W CN 2008000127W WO 2008089657 A1 WO2008089657 A1 WO 2008089657A1
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WIPO (PCT)
Prior art keywords
solar cell
surface
electrode
concentrator
light incident
Prior art date
Application number
PCT/CN2008/000127
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French (fr)
Chinese (zh)
Inventor
Binxuan Yi
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Binxuan Yi
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Filing date
Publication date
Priority to CN 200710007700 priority Critical patent/CN101226968A/en
Priority to CN200710007700.3 priority
Application filed by Binxuan Yi filed Critical Binxuan Yi
Publication of WO2008089657A1 publication Critical patent/WO2008089657A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433Particular geometry of the grid contacts
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

A solar cell is provided. The cross-section area of electrode conductors (113, 114) can be enlarged and the length of electrode conductors (113, 114) can be reduced by setting two solderable electrode conductors (113, 114) whose width is wider and length is shorter, therefore it can reduce the serial resistance of the solar cell. A solar cell module is also provided, which is formed by multiple solar cells connected in series. Besides, it provides a method, which can reduce the serial resistance of the solar cell module.

Description

A method for concentrating solar cells and concentrator solar cell to reduce the series resistance value Field

The present invention is in the field of solar photovoltaic power generation, particularly, to a concentrator solar cell.

The present invention further relates to a method for reducing the concentrator solar cell series resistance value.

The present invention also relates to a concentrator solar cell module. Background technique

Currently, due to the high purity single polysilicon production technology monopoly in several foreign high-tech companies, the price of crystalline silicon remains high, while solar photovoltaic systems requires a lot of single, polycrystalline silicon, a direct result of the high cost of solar power, current solar photovoltaic power generation cost about 4-5 yuan wH, is about 10 times the cost of thermal power, thus solar power projects in large scale disruption.

At the same time, domestic and foreign experts have found that crystalline silicon photovoltaic cells is actually overkill in normal use under strong sunlight, because crystalline silicon photovoltaic cells can withstand higher intensity, increase proportional to the current emitted without getting Effect of photovoltaic battery life, if the condenser is improved by several times or even hundreds of times the light intensity of area of ​​photovoltaic cell, the photovoltaic cell area of ​​the output current of the same power can be reduced considerably, so that, in the crystalline silicon solar cell panel the amount can be significantly reduced, the cost of solar photovoltaic power generation can be greatly decreased, the cost of wind power or hydroelectric close, reaching the level of the user can be received.

However, it was found experimentally that the ordinary solar heat in full, with a strong concentrated solar bare 6 times, 4.8 times of the power can be output, but if it continues to increase the light intensity, and found that the actual output power We did not continue linearly proportional growth.

Therefore, the study has a high rate and condensing power output can be simultaneously increased solar concentrator photovoltaic become arduous task scientists, scientists think a lot of ways, such as grooved buried technology, photolithography thin gate line, using better semiconductor materials like gallium shredding. But these basic techniques for various reasons did not form large-scale production, that is not good economic value.

A large number of people through experimental analysis, the study concluded: The main factors affecting the power output of concentrator solar cells is the series resistance, i.e., resistance of the semiconductor body, the surface sheet resistance, and an electrode conductor resistance and contact resistance between the electrode and the surface of the silicon integrated composition factors; higher series resistance, as the light intensity increases, the conversion efficiency of the condenser battery will fall faster. The bulk resistance of the semiconductor material of the semiconductor is determined to select can not be improved by improving the process; not a surface sheet resistance as low as possible, the lower surface of the sheet resistance, the electron - hole recombination velocity also exponentially magnification ratio rise, it is not conducive to large to produce the desired photo-generated electron - hole pairs, and therefore the value is a certain range of, for example: 20Ω /. ~ 100Ω / port, a conventional concentrator solar cells so that products can be lower, but can not be made low, and two resistors relative to the overall series resistance of the composition, a relatively small proportion.

If you need to effectively reduce the resistor value, only on the "contact resistance between the electrode and the silicon surface" "electrode conductor resistance" and improvements, such as: ①, using better electrode conductive material; ②, widened electrode conductor width; ③, using grooved buried art; the resistance of the electrode can effectively reduce conductor resistance, so as to achieve the purpose of reducing the series resistance; however, one, a better electrically conductive material used, the manufacturing cost will rapidly rise, and the limited reduction resistor; 2, the current common solar cell, the basic requirement is that the electrode conductor element should be as narrow as possible so as to maximize the light receiving portion of the light incident surface area ratio of the electrode conductor being masked light incident surface element the smaller, the better the performance of the battery, the general area of ​​the electrode conductor element does not exceed 10% of the total area of ​​the solar cell; 3, using grooved buried techniques, i.e., by reducing the width of the electrode conductor, electrode conductors increase! ^ People deep, can reduce the number of series resistance, but also increases the manufacturing costs, and the current production technology is not sufficient to support large-scale production.

Has now been found, using a simple electrode conductor element width widening techniques, series resistance can be obtained relatively small concentrator solar cells, but the electrode element is widened, while the cell area covered by the electrode is also increased, and did not get Good results. SUMMARY

An object of the present invention is to provide a concentrating solar cell by providing a wide width and a short length of two-conductor element may be welded to increase the cross-sectional area of ​​the electrode conductor, reduce the length of the electrode conductor, reduce concentrating the series resistance of the solar cell.

Another object of the present invention is to provide a concentrating solar cell module, a plurality of concentrator solar cells in series to each other, having the maximum light incident surface, and improve the utilization efficiency of solar power generation resources.

Another object of the present invention to provide a method for concentrating solar cell series resistance value decreases. According to an aspect of the present invention, a concentrating solar cell comprising a body of semiconductor material having a dopant ρ / η junction, characterized in that said solar energy concentrating primary cell comprises a first opposing face, a semiconductor material based on top region of the light incident surface of the diffusion region; a second opposite major surface, the back surface of the light incident surface is formed; and

A plurality of sides, positioned between said first major surface and a second opposite major surface opposite; Zi major opposing faces of the longer side of one side of the first weld electrode conductor member, said second main surface opposing parallel opposing second side disposed electrode solderable conductor element.

The concentrating solar cell of the present invention, wherein the width of the first weld electrode and second weld conductor element electrode conductor elements are equal to said first major surface and a second opposing major faces opposing longer sides, which length is 0.5mm ~ 1.5mm, the width of the light incident surface concentrator solar cell is 1.0mm ~ 4.0mm, the first major surface and the opposite second shorter side length of the main opposing faces of 1.5mm ~ 5.5 mm. The preferred length of the first weldable member and a second conductor electrode welding electrode conductor element is 1.0mm, the width of the light incident surface concentrator solar cell of 2.0mm.

Concentrator solar cell according to the present invention, wherein the doped semiconductor material of the body material may be selected from silicon, gallium arsenide, indium phosphide, copper indium selenide, germanium, and zinc oxide.

Concentrator solar cell according to the present invention, wherein the material of the welding electrode conductor element may be selected from one or more mixed material of the metal material such as aluminum, silver, titanium, and nickel. Preferably the material of the first weldable member silver electrode conductor material of the second welding electrode conductor element may be a mixture of silver and aluminum.

Concentrator solar cell according to the present invention, wherein the body is a doped semiconductor material doped semiconductor wafer.

According to another aspect of the present invention, there is provided a concentrator solar cell module, consisting of concentrator solar cells in series according to the present invention, a first welding electrode through a conductive member concentrator solar cell adjacent to another solar concentrator second welding electrode conductor element cell directly contact each other in series.

According to another aspect of the present invention, a method for reducing the series resistance of the doped semiconductor material body having a concentrator solar cell, comprising the steps of:

1) providing a doped semiconductor material of the body having a p / n sections;

2) in the doped semiconductor body making light incident surface solderable conductor element electrodes, no two adjacent conductor connecting between the solderable conductor element electrodes;

3) the back surface of the doped semiconductor material of the body of the light incident surface making solderable conductor element electrode, which is located in a position opposing the first major surface of the electrode conductor element offset, and shifting the location of all of the welding electrode conductor elements are consistent;

4) Preparation of an aluminum layer as a back surface field on the back surface of the body of doped semiconductor material of the light incident surface elsewhere;

5) the light incident surface antireflection film production;

6) sintering the metal electrode conductor element;

7) Application of laser scribing machine along said doped semiconductor material of the body of the light incident surface solderable conductor element and a back electrode welding electrode conductor element may be displaced positions diced to form separate concentrator solar cells having a low series resistance.

In order to avoid leakage due to the shunt resistance caused by too small too large, the first solution is more preferably in pure crystalline silicon surface and the step of applying the oxidizing agent groove, so that the surface to be engraved grooves forming an oxide layer, after cleaning the surface, and then the silicon step 1) to 6).

The above steps 2) to 7) produced sequence may be adjusted as desired, without affecting the effect of concentrating the solar cell. BRIEF DESCRIPTION OF DRAWINGS

Figure 1 is a front view of the light incident concentrated solar cell of the present invention;

FIG 2 is a rear view of the solar cell concentrator;

Figure 3 is a perspective view of a concentrator solar cell to the invention;

FIG 4 is a partial perspective view of the concentrator solar cells 3;

FIG 5 is a side view showing state before dicing two concentrator solar cells coupled together;

FIG 6 is a side view showing state after dicing two concentrator solar cells connected together in series;

FIG 7 is a plan view of a concentrating solar cell apparatus 10 concentrator solar cells connected in series is formed;

Figure 8 is another embodiment of the invention the cross sectional view of the solar concentrator before dicing; FIG. 9 is a sectional view of a battery in FIG. 8 after concentrating solar cell as dicing. Detailed Description of the Invention

DRAWINGS by the description of the preferred embodiment of the present invention, described in detail but do not limit the present invention.

Concentrator solar cell of the present invention is shown in FIG. 1 ~ 4, FIG. 1 shows a front concentrator solar cell scribe 11, 12, 13, 14 ..... consisting of a set of batteries, each concentrator body as a solar cell having a doped semiconductor material body p / n junction comprising a first major facing surface 111, 121, 131, 141 ......, the establishment of forming a light diffusion region in the semiconductor material of the top region incident surface and a second main surface located opposite the back light incident surface 112, 122, 132, 142 ...... (see FIG. 2), and a plurality of side surfaces, and 3, a concentrator solar cell is 11 is an enlarged perspective view, FIG. 4 shows a partially peeled anti-reflective coating layer 11 of the battery 116, a first electrode solderable conductor element in a first main surface opposite side longer sides 113, 123, 133, 143 in a second major surface opposing parallel side disposed opposite the second welding electrode conductor elements 114, 124, 134, 144 ......, in a battery module composed of a plurality of concentrator solar cells, a poly a second welding electrode of the light guide of the solar cell electrode Zi, a solderable conductor elements 113 and another adjacent sheet concentrating solar cell Element 124 firmly welded together, since the width W1 of the element electrode conductive solderable longer side length equal to a first major facing surface, and the length L1 is very narrow, is 0.5mm ~ 1.5mm, and therefore the solderability electrode conductor resistance can be ignored, in addition, the width of the battery concentrating solar light incident surface W2 is 1.0mm ~ 4.0mm, the first major surface and the opposite second shorter side length L2 of the main opposing faces 1.5mm ~ 5.5 mm. After the series of a concentrating solar cell element electrode conductive solderable light incident surface 113 is covered with the second block concentrator solar cell, and so on, FIG. 7 is the surface, only the light incident surface of the solar cell concentrator exposure to sunlight, no element electrode conductor covered sunlight resources 100% utilization, and improve the power generation efficiency of the solar cell concentrator.

Concentrator solar cell is doped monocrystalline silicon, with an active semiconductor device production made, taking 125nimx 125mm square and a thickness of a conventional silicon chip area 220μηι melt, such a wafer may be obtained on the market.

By a conventional etching process, and a cleaning wafer configuration, and the light incident surface of a silicon wafer by using a phosphorus compound, such as POCl 3 doping at 800 ~ 900 ° C, re-diffusion, which is made of n-type and is formed as basic p / active component n junction concentrator solar cell is about 117, the surface resistance value of 30Ω / port.

Through a mask, the solder paste will be applied in the light incident surface doped semiconductor material body, forming a plurality of stripe width lmm, the clearance between the electrode of any two conductive elements may be welded to 2mm, a length of 125mm solderability electrode conductor elements 113, 123, 133 ....., and there is no connection between the conductor electrodes adjacent two solderable conductor elements.

Similarly, through a mask, the silver-aluminum paste application may weld the back surface of the doped semiconductor material body, forming a plurality of stripe width of 1mm spacing between the two, as 2mm, a length of 125mm solderable conductor elements 114 of the electrode, 124, 134, ......, the position of the back surface of the semiconductor material of the body may be doped welding electrode conductor element coincides with the solderable conductor element electrode of the light incident surface shifted and shifted all position welding electrode conductor elements are consistent .

Doped semiconductor material on the back surface of the body without application of the position of the silver paste, the aluminum deposited layer 115 for generating back-surface field. High temperature sintering process for measures generally used, applied to the above material, so solid and reliable connection paste on the silicon surface, and the back-surface field is formed on the back surface.

The conventional process for the light incident surface of the converging solar cell layer antireflection film 116 is deposited. Laser scribing machine, along the light incident surface solderable conductor elements and the back surface electrode may be shifted at the welding electrode conductor element cut open, Figure 5, is formed independent of the length of 125mm, a width of 3mm condenser having a low series resistance The solar cell 11, 12, 13, 14 .......

The semiconductor material of the body not only concentrator solar battery comprising doped silicon, may further comprise any other semiconductor materials, Examples of other semiconductor materials are gallium arsenide, indium phosphide, copper indium selenide, germanium, and zinc oxide.

Solderable conductor element is an electrode free electron flow media, but also on concentrator solar cells connected in series in a manner concentrator solar cell at the soldering surface and the other surface of a concentrator solar cell, must ensure a high conductivity of the element high performance and weldability, the metallic materials are aluminum, silver, titanium, nickel, or integrated application of these metals.

Another embodiment of the present invention is shown in FIG. 8 and FIG. 9, in order to prevent side leakage phenomenon concentrator solar cell is formed after dicing, in the production, the light incident surface may be first coated with a semiconductor material of the body in the oxidizing agent layer and then the surface of laser scribing, groove 20 is formed, the surface is chamfered by dicing the reaction temperature with an oxidizing agent layer formed of an oxide layer 118 is covered, then the steps described above is formed a first welding electrode conductor element 113, the second electrode conductor elements 114 may be welded, aluminum BSF 115 and antireflection film 116 and the like, and then dicing the light incident surface is formed from a concentrator solar cell (FIG. 9), this the concentrating solar cell production process in which a side has p / n junction is formed a protective layer, i.e., oxide layer 118, which effectively prevents leakage phenomenon generated by the shunt resistor. Industrial Applicability

Concentrator solar cell of the present invention, the other side and the back side of the light incident surface of the semiconductor material of the body will be formed with a width equal to the length of the concentrator solar cell electrode solderable conductor element, and the length of the electrode can be welded conductor elements only a maximum of 1.5mm, according to general knowledge of physics know that the conductive cross-sectional area of ​​the solderable conductor element electrode width X height = semiconductor body element electrode conductor material, we know that, the larger the cross sectional area of ​​the conductor, the resistance to the smaller, at the same time, the shorter the length of the conductor, the smaller the resistance, and thus the present invention is a concentrating solar cell electrode conductor which is much smaller than the resistance value of the resistance value of the common electrode conductor solar cell element, the resistance element electrode conductor almost negligible, effectively reducing the overall series resistance of the solar cell concentrator.

Further, since the back surface of the light incident surface concentrator solar cell electrode conductor element may be welded one to another concentrator solar cell element can be welded to the welding electrode conductor, belonging to series connection, i.e. a concentrator solar cell covers the other on a concentrator solar cell electrode of the conductive member, the surface, the sunlight on the light incident surface of concentrator solar cells, no blocking object, all of concentrator solar cell is absorbed, more full use of the resources of sunlight improve the power generation efficiency of the solar cell concentrator.

Claims

Claims
A concentrator solar cell, comprising a body having a doped semiconductor material p / n junction, wherein said concentrator solar cell comprising
The first major facing surface, the light incident surface is formed to establish the top region of the semiconductor material of the diffusion region; undertaking of two major opposing surfaces, the back surface of the light incident surface is formed; and
A plurality of sides, positioned between said first major surface and a second opposite major surface opposite;
Said first major surface of the longer side of the opposing side of the welding electrode conductor disposed first element, the second major surface of the opposing opposite side of the second weld electrode disposed parallel to the conductor element.
2, concentrating solar cell according to claim 1, wherein the width of said first welding electrode and the second solderable conductor element electrode conductor element and the first major surface and second major opposing surfaces are opposed equal to the longer side having a length of 0.5mm ~ 1.5mm, the width of the light incident surface concentrator solar cell is 1.0mm ~ 4.0mm, the relatively short first main surface and the second major surface of the opposing edges a length of 1.5mm ~ 5.5mm.
3, a concentrator solar cell as claimed in claim 2, characterized in that the length of the first weldable member and a second conductor electrode welding electrode conductor element is 1.0mm, the width of the solar concentrator of the light incident surface 2.0mm.
4, the concentrator solar cell as claimed in claim 1, wherein said doped semiconductor material body is selected from silicon, gallium arsenide, indium phosphide, copper indium selenide, germanium, and zinc oxide.
5, concentrator solar cell according to claim 1, wherein the one or more selected from aluminum, silver, titanium, and nickel material of the solderable conductor element electrode.
6, the concentrator solar cell as claimed in claim 5, characterized in that the material of the first electrode solderable conductor element is silver, the material of the second welding electrode conductor element may be a mixture of silver and aluminum.
7, concentrating solar cell according to claim 1, wherein said body is a doped semiconductor material doped semiconductor wafer.
8. A concentrator solar cell module comprising a plurality of series-connected solar cell concentrator as claimed in claim 1, wherein the first conductor element by a welding electrode concentrator solar cell adjacent to another condensing the second element may be welded directly to the welding electrode conductor contact solar cells in series to each other.
9. A method of reducing the series resistance of the doped semiconductor material having a body concentrating solar cell apparatus, comprising:
a) providing a doped semiconductor material of the body having a p / n sections; no solderable conductor connecting member between the electrode conductor;
c) a doped semiconductor material of the body on the back surface of the light incident surface of the welding electrode conductor element may be produced, which is located at a position opposing the first major surface of the electrode conductor element offset, and shifting the location of all of the welding electrode conductor elements are consistent;
d) to produce an aluminum layer as a back surface field on the back surface of the body of doped semiconductor material of the light incident surface elsewhere;
e) the light incident surface antireflection film production;
f) sintering the metal electrode conductor element;
g) Application of laser scribing machine along said doped semiconductor material of the body of the light incident surface solderable conductor element and a back electrode welding electrode conductor element may be displaced positions diced to form separate concentrator solar cells having a low series resistance.
10. The method according to claim 9, characterized by further comprising a pre-production concentrator solar cell, the light incident surface is first coated surface of the semiconductor material of the body of an oxidizing agent and grooving step
PCT/CN2008/000127 2007-01-17 2008-01-17 Solar cell and method for reducing the serial resistance of solar cells WO2008089657A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN 200710007700 CN101226968A (en) 2007-01-17 2007-01-17 Method for reducing series resistance value of light gathering solar battery and light gathering solar battery obtained by the method
CN200710007700.3 2007-01-17

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WO2013020590A1 (en) * 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Rectangular solar cell and associated solar cell arrangement
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9461189B2 (en) 2012-10-04 2016-10-04 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9496427B2 (en) 2013-01-11 2016-11-15 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
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US9590132B2 (en) 2014-12-05 2017-03-07 Solarcity Corporation Systems and methods for cascading photovoltaic structures
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US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9793421B2 (en) 2014-12-05 2017-10-17 Solarcity Corporation Systems, methods and apparatus for precision automation of manufacturing solar panels
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US10084107B2 (en) 2010-06-09 2018-09-25 Tesla, Inc. Transparent conducting oxide for photovoltaic devices
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US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10236406B2 (en) 2014-12-05 2019-03-19 Solarcity Corporation Systems and methods for targeted annealing of photovoltaic structures
US10309012B2 (en) 2015-05-14 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769091A (en) * 1972-03-31 1973-10-30 Us Navy Shingled array of solar cells
CN86102164A (en) * 1985-04-01 1987-01-14 索冯尼克斯太阳能系统公司 Increased active area photovoltaic cell
JPS62195185A (en) * 1986-02-21 1987-08-27 Sharp Corp Amorphous solar battery module
US4877460A (en) * 1987-03-17 1989-10-31 Telefunken Electronic Gmbh Solar cell module
JPH06268241A (en) * 1993-03-15 1994-09-22 Fuji Electric Co Ltd Thin-film solar cell and manufacture thereof
US6414235B1 (en) * 1999-03-30 2002-07-02 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
WO2004066400A1 (en) * 2003-01-24 2004-08-05 Stichting Energieonderzoek Centrum Nederland Coupling device for thin-film photovoltaic cells

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769091A (en) * 1972-03-31 1973-10-30 Us Navy Shingled array of solar cells
CN86102164A (en) * 1985-04-01 1987-01-14 索冯尼克斯太阳能系统公司 Increased active area photovoltaic cell
JPS62195185A (en) * 1986-02-21 1987-08-27 Sharp Corp Amorphous solar battery module
US4877460A (en) * 1987-03-17 1989-10-31 Telefunken Electronic Gmbh Solar cell module
JPH06268241A (en) * 1993-03-15 1994-09-22 Fuji Electric Co Ltd Thin-film solar cell and manufacture thereof
US6414235B1 (en) * 1999-03-30 2002-07-02 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
WO2004066400A1 (en) * 2003-01-24 2004-08-05 Stichting Energieonderzoek Centrum Nederland Coupling device for thin-film photovoltaic cells

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084099B2 (en) 2009-11-12 2018-09-25 Tesla, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US10084107B2 (en) 2010-06-09 2018-09-25 Tesla, Inc. Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9887306B2 (en) 2011-06-02 2018-02-06 Tesla, Inc. Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
WO2013020590A1 (en) * 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Rectangular solar cell and associated solar cell arrangement
US9461189B2 (en) 2012-10-04 2016-10-04 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9502590B2 (en) 2012-10-04 2016-11-22 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10164127B2 (en) 2013-01-11 2018-12-25 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9496427B2 (en) 2013-01-11 2016-11-15 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10115839B2 (en) 2013-01-11 2018-10-30 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9590132B2 (en) 2014-12-05 2017-03-07 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9991412B2 (en) 2014-12-05 2018-06-05 Solarcity Corporation Systems for precision application of conductive adhesive paste on photovoltaic structures
US10043937B2 (en) 2014-12-05 2018-08-07 Solarcity Corporation Systems and method for precision automated placement of backsheet on PV modules
US10230017B2 (en) 2014-12-05 2019-03-12 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US10236406B2 (en) 2014-12-05 2019-03-19 Solarcity Corporation Systems and methods for targeted annealing of photovoltaic structures
US9793421B2 (en) 2014-12-05 2017-10-17 Solarcity Corporation Systems, methods and apparatus for precision automation of manufacturing solar panels
US9685579B2 (en) 2014-12-05 2017-06-20 Solarcity Corporation Photovoltaic structure cleaving system
US10309012B2 (en) 2015-05-14 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US10181536B2 (en) 2015-10-22 2019-01-15 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars

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