WO2012122034A1 - Method of tuning work function of metal nanostructure-based transparent conductor - Google Patents

Method of tuning work function of metal nanostructure-based transparent conductor Download PDF

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WO2012122034A1
WO2012122034A1 PCT/US2012/027541 US2012027541W WO2012122034A1 WO 2012122034 A1 WO2012122034 A1 WO 2012122034A1 US 2012027541 W US2012027541 W US 2012027541W WO 2012122034 A1 WO2012122034 A1 WO 2012122034A1
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dipole
metal
ink composition
work function
nanostructures
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French (fr)
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Florian Pschenitzka
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Cambrios Technologies Corp
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Cambrios Technologies Corp
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Priority to KR1020137026283A priority Critical patent/KR20140020957A/ko
Priority to CN201280011724.5A priority patent/CN103503191A/zh
Priority to JP2013556911A priority patent/JP2014511551A/ja
Priority to SG2013065818A priority patent/SG193253A1/en
Priority to EP12710827.2A priority patent/EP2681780B1/en
Priority to TW101107221A priority patent/TWI577237B/zh
Publication of WO2012122034A1 publication Critical patent/WO2012122034A1/en
Anticipated expiration legal-status Critical
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80Constructional details
    • H10K10/82Electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/52Electrically conductive inks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/76Chemiluminescence; Bioluminescence
    • G01N21/763Bioluminescence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/816Multilayers, e.g. transparent multilayers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This disclosure generally relates to tuning the working function of transparent electrode in electroluminescence (EL) devices, in particular, organic light-emitting diodes (OLEDs).
  • EL electroluminescence
  • OLEDs organic light-emitting diodes
  • FIG 1 shows a typical OLED (10) formed on a transparent substrate (20).
  • An anode (30) is disposed on the transparent substrate (20) and is also transparent to allow the internally generated light to exit.
  • the light-emitting layer takes the form of an organic emissive stack (40), which is disposed between the anode (30) and a cathode (50).
  • the organic emissive stack (40) includes a thin film of electroluminescent chemical compounds (60) flanked by two charge injection layers (70 and 80, one for electron injection and one for hole injection).
  • metal nanostructure-based transparent conductors represent an emerging class of transparent electrodes. Unlike the ITO, which is vacuum deposited on a substrate, metal nanostructure-based transparent conductors are formed by coating an ink formulation of metal nanowires on a substrate. The process addresses certain production limitations encountered by the ITO, and is particularly suitable for printing or coating on large area and/or flexible substrates.
  • the light generation mechanism of the OLED is based on radiative recombination of excitons of electrically excited organic compound(s).
  • LUMO lowest unoccupied molecular orbital
  • HOMO highest occupied molecular orbital
  • the process of withdrawing the electrons from the HOMO may also be described as injecting holes into the HOMO.
  • Electrostatic forces bring the electrons and the holes toward each other and they recombine forming an exciton, an excided state of the electron bound to the hole.
  • the excited state relaxes to the ground state of the electron, accompanied by emission of radiation, the frequency of which is in the visible region (380-800nm). The frequency of the radiation depends on the difference in energy between the HOMO and LUMO.
  • FIG. 2 shows schematically an energy diagram of an OLED.
  • the energy difference between the anode and HOMO represents an energy barrier (E h ) for the hole injection.
  • the energy difference between the cathode and LUMO represents an energy barrier (E e ) for the electron injection.
  • Work function of an anode corresponds to the minimum amount of energy needed to remove an electron from the surface of the anode (or cathode). As shown in Figure 2, increasing the work function of the anode (e.g., to the dashed line) decreases the energy barrier (E h ), thereby increasing the efficiency of the hole injection from the anode.
  • the work function of a surface is strongly affected by the condition of the surface.
  • the work function of ITO can be increased from 4.2eV to 4.8eV by oxygen plasma.
  • oxygen plasma See, e.g., Wu, C. C. et al. Appl. Phys. Lett. 70(11): 1348 (1997).
  • Changing the work function of a material by absorption of a thin layer of a substance with an electrostatic dipole has also been reported. See, e.g., Gu, D. et al. J. Appl. Phys. 97: 123710 (2005).
  • Provided herein include a method for adjusting work function of a metal nanostructure -based conductive film, the method comprising: providing a plurality of metal nanostructures, each metal nanostructure having an outer surface; and forming a dipole surface layer on the outer surface of the metal nanostructure, wherein the dipole surface layer includes a plurality of dipole ligands.
  • forming the dipole surface layer on the outer surface of the metal nanostructure includes: forming an ink composition that comprises the plurality of metal nanostructures and the plurality of dipole ligand, and coating the ink composition on a substrate to provide the conductive film.
  • adjusting work function includes increasing the work function by about 0.8-1.2 eV as compared to a conductive film form of metal nanostructures without a dipole surface layer.
  • the dipole ligand is a polar molecule such as a surfactant.
  • an anionic fluorosurfactant is used as the dipole ligand.
  • the dipole ligand is lithium carboxylate anionic fluorosurfactant.
  • an ink composition that comprises: a plurality of metal nanowires, and a dipole ligand, wherein the dipole ligand is present at about 10 "6 to 10 "4 moles per m 2 surface area of the metal nanostructures.
  • the dipole ligand is present at about 10 "5 to 10 "4 moles per m 2 surface area of the metal nanostructures.
  • the metal nanostructures are silver nanowires.
  • the dipole ligand is an anionic fluorosurfactant.
  • the anionic fluorosurfactant is a lithium carboxylate anionic fluorosurfactant.
  • the ink composition may further comprise a surfactant, wherein a weight ratio of the plurality of the metal nanowires and the surfactant is in a range of 560: 1 to 5 : 1.
  • the ink composition may further comprise a viscosity modifier, such as hydroxypropyl methylcellulose (HPMC).
  • a viscosity modifier such as hydroxypropyl methylcellulose (HPMC).
  • a further embodiment provides an OLED device comprising, a cathode, an anode, and an organic emissive stack disposed between the cathode and the anode, wherein the anode includes a conductive film of a plurality of metal nanostructures, each metal nanostructure having an outer surface and a dipole surface layer disposed on the outer surface, and wherein the dipole surface layer includes a plurality of dipole ligands.
  • Figure 1 shows a diagram of an OLED.
  • Figure 2 shows an energy diagram of an OLED.
  • FIG. 3 shows an embodiment according to the present disclosure.
  • Described herein are methods for adjusting work function of nanostructure-based transparent conductor.
  • the methods are directed to increasing the work function of a metal nanostructure-based transparent conductor (anode) in an OLED by modifying the surface of the metal nanostructures.
  • anode a metal nanostructure-based transparent conductor
  • the energy levels of the organic emissive stack and the anode are better aligned, thereby enhancing the quantum efficiency of the OLED and/or lowering the turn-on voltage.
  • the overall power efficiency of the device is increased.
  • one embodiment provides a method for adjusting work function of a metal nanostructure-based transparent conductor comprising: providing a plurality of metal nanostructures, each metal nanostructure having an outer surface; forming a dipole surface layer on the outer surface of the metal nanostructure, wherein the dipole surface layer includes a plurality of dipole ligands.
  • a "dipole ligand” refers to a molecule or a particle that has a non-uniform distribution of positive and negative charges.
  • the dipole ligand may have a permanent dipole.
  • a polar molecule such as an ionic surfactant has a permanent dipole, which arises from substantially different electronegativity at one part of the molecule (e.g. , the polar head of the surfactant) from another part of the molecule (e.g., the lipophilic tail of the surfactant).
  • the dipole ligand may also have an induced dipole (e.g., a polarizable molecule), in which case, the non-uniform distribution of the positive and negative charges are caused by a nearby molecule or particle that has a permanent dipole.
  • an induced dipole e.g., a polarizable molecule
  • Figure 3 schematically shows a nanowire (100) with an outer surface
  • dipole ligands (120) adsorb.
  • Dipole ligands (120) in the surface region are subjected to orienting forces as a result of the anisotropic force field.
  • Polar molecules e.g. permanent dipoles
  • polarizable molecules may be polarized (induced dipoles) and oriented.
  • the dipole ligands (100) are oriented in such a way that the negative end of the dipole ligand adsorbs to the surface (110), whereas the positive end of the dipole ligand points away from the surface (110).
  • the preferential orientation causes the dipole ligands to form an array, typically of a single layer of the dipole ligands that are oriented in substantially the same direction.
  • Such an array is called a surface dipole layer (130), with which an electric potential drop is associated. It is believed that the electric potential drop causes the increase of the work function of an anode formed by the metal nano wires.
  • the dipole ligand may orient in such a way that the positive end of the dipole ligand adsorbs to the surface while the negative end points away from the surface.
  • a surface dipole layer thus formed is associated with an electrical potential increase, which decreases the work function.
  • forming the dipole surface layer on the outer surface of the metal nanostructure includes first forming an ink composition that comprises the metal nanostructures and the dipole ligand, followed by coating the ink composition on a substrate to provide a conductive film of interconnecting or networking nanostructures.
  • the method described herein is therefore compatible with the solution-based approach to forming nanostructure-based conductive film.
  • the dipole ligands adsorb to the outer surface of individual metal nanostructures in the liquid phase, and as the ink composition dries or cures on the substrate, a dipole surface layer is formed on each individual metal nanostructure.
  • metal nanostructures in the presence of the dipole surface layer, are capable of forming conductive films in which the work function could increase by about 0.8eV-1.2eV as compared to conductive films made of the same metal nanostructures but without the dipole surface layer.
  • the dipole ligand is an ionic surfactant molecule, which can be either an anionic (negatively charged) or cationic (positively charged) molecule.
  • the surfactant molecule is an anionic fluorosurfactant.
  • Non-limiting examples include ZONYL FSA (lithium carboxylate anionic fluorosurfactant).
  • Other dipole ligands with similar properties as ZONYL ® FSA can be used, including, e.g., ZONYL ® FSN, ZONYL ® FSO, ZONYL ® FSH (DuPont Chemicals, Wilmington, DE), and NOVECTM (3M, St. Paul, MN).
  • the shift in work function is intrinsic to the material depending on the strength of the dipole moment.
  • the dipole ligand can be added directly into an ink composition that comprises metal nanostructures. It is important that the dipole ligand is in sufficient amount relative to the metal nanostructures to form a dipole surface layer on each metal nanostructure. In various embodiments, the dipole ligand is present at about 10 "6 to 10 "4 moles per m 2 surface area of the metal nanostructures. In further embodiments, the dipole ligand is present at about 10 ⁇ 5 to 10 ⁇ 4 moles per m 2 surface area of the metal nanostructures.
  • a surfactant is not necessarily a dipole ligand, as defined. While non-ionic surfactants can function as conventional surfactants by adsorbing on the nanostructures by static interaction (as opposed to ionic interaction), they may not be capable of forming an array or monolayer. Even ionic surfactants, unless reaching a critical concentration threshold in the ink composition, may not be capable of forming an array or monolayer.
  • one embodiment provides an ink composition that comprises a plurality of silver nanowires, a surfactant, a viscosity modifier, and a dipole ligand, wherein the dipole ligand is present at about 10 "6 to 10 "4 moles per m 2 surface area of the metal nanostructures. In further embodiments, the dipole ligand is present at about 10 "5 to 10 "4 moles per m 2 surface area of the metal nanostructures.
  • the work function of the conductive film increases from a range of about 4.5eV - 4.7eV (without FSA) to a range of about 5.2eV - 5.4eV.
  • the conductive film described herein is suitable as an anode in an OLED device. It can be expected that the increase in work function in the film would increase the efficiency of the OLED device.
  • an OLED device comprising, a cathode, an anode, and an organic emissive stack disposed between the cathode and the anode, wherein the anode includes a conductive film of a plurality of metal nanostructures, each metal nanostructure having an outer surface and a dipole surface layer disposed on the outer surface, and wherein the dipole surface layer includes a plurality of dipole ligands.
  • the dipole ligands are present at 10 ⁇ 6 to 10 ⁇ 4 moles per m 2 surface area of the metal nanostructures. In further embodiments, the dipole ligand is present at about 10 ⁇ 5 to 10 ⁇ 4 moles per m 2 surface area of the metal nanostructures. In further embodiments, the dipole ligands are anionic surfactants. In further embodiments, the anode has a work function of 5.2-5.7 eV.
  • metal nanostructures or “nanostructures” generally refer to electrically conductive nano-sized structures, at least one dimension of which is less than 500nm, more preferably, less than 250nm, lOOnm, 50nm or 25nm.
  • the nanostructures can be of any shape or geometry.
  • Typical isotropic nanostructures include nanoparticles.
  • the nanostructures are anisotropically shaped (i.e., aspect ratio ⁇ 1).
  • aspect ratio refers to the ratio between the length and the width (or diameter) of the nanostructure.
  • the anisotropic nanostructure typically has a longitudinal axis along its length.
  • Exemplary anisotropic nanostructures include nanowires and nanotubes, as defined herein.
  • the nanostructures can be solid or hollow. Solid nanostructures include, for example, nanoparticles and nanowires.
  • Nanowires thus refers to solid anisotropic nanostructures.
  • each nanowire has an aspect ratio (length: diameter) of greater than 10, preferably greater than 50, and more preferably greater than 100.
  • the nanowires are more than 500nm, more than ⁇ ⁇ , or more than ⁇ long.
  • Hollow nanostructures include, for example, nanotubes.
  • the nanotube has an aspect ratio (length: diameter) of greater than 10, preferably greater than 50, and more preferably greater than 100.
  • the nanotubes are more than 500nm, more than l um, or more than ⁇ in length.
  • the metal nanostructures can be formed of any electrically conductive metallic material.
  • the metallic material can be an elemental metal (e.g., transition metals) or a metal compound (e.g., metal oxide).
  • the metallic material can also be a bimetallic material or a metal alloy, which comprises two or more types of metal. Suitable metals include, but are not limited to, silver, gold, copper, nickel, gold-plated silver, platinum and palladium.
  • a conductive film is typically in a multi-film configuration, and at least includes a nanostructure layer coated on a substrate.
  • the nanostructure layer is formed by depositing an ink composition (also referred to as
  • coating composition comprising a liquid carrier and a plurality of metal nanostructures on the substrate.
  • the nanostructure layer or film comprises nanostructures that are randomly distributed and interconnect with one another. As the number of the nanostructures reaches the percolation threshold, the thin film is electrically conductive. Other non-volatile components of the ink composition, including, for example, one or more binders, surfactants and additional viscosity modifiers, may form part of the conductive film.
  • the liquid carrier for the dispersion may be water, an alcohol, a ketone or a combination thereof.
  • Exemplary alcohols may include isopropanol (IP A), ethanol, diacetone alcohol (DAA) or a combination of IPA and DAA.
  • Exemplary ketones may include methyl ethyl ketone (MEK) and methyl propyl ketone (MPK).
  • the surfactants serve to reduce aggregation of the nanostructures.
  • suitable surfactants include fluorosurfactants such as ZONYL® surfactants, including ZONYL® FSN, ZONYL® FSO, ZONYL® FSA, ZONYL® FSH (DuPont Chemicals, Wilmington, DE), and NOVECTM (3M, St. Paul, MN).
  • fluorosurfactants such as ZONYL® surfactants, including ZONYL® FSN, ZONYL® FSO, ZONYL® FSA, ZONYL® FSH (DuPont Chemicals, Wilmington, DE), and NOVECTM (3M, St. Paul, MN).
  • Other exemplary surfactants include non-ionic surfactants based on alkylphenol ethoxylates.
  • Preferred surfactants include, for example, octylphenol ethoxylates such as TRITONTM (xlOO, xl l4, x45), and nonylphenol ethoxylates such as TERGITOLTM (Dow Chemical Company, Midland MI).
  • Further exemplary non-ionic surfactants include acetylenic-based surfactants such as DYNOL® (604, 607) (Air Products and Chemicals, Inc., Allentown, PA) and n-dodecyl ⁇ -D- maltoside.
  • the surfactant may be the same as the dipole ligand. In other embodiments, the surfactant may be different from the dipole ligand and co-exist with the dipole ligand in the ink composition.
  • the binder acts as a viscosity modifier in the ink composition and may affect the rheology of the same during the coating process.
  • the binder also helps to immobilize the nanostructures on a substrate.
  • suitable binders include hydroxypropyl methylcellulose (HPMC), methyl cellulose, xanthan gum, polyvinyl alcohol, carboxy methyl cellulose, and hydroxy ethyl cellulose.
  • the weight ratio of the surfactant to the binder in the coating solution is preferably in the range of about 80: 1 to about 0.01 : 1; the weight ratio of the binder to the conductive nanostructures is preferably in the range of about 5: 1 to about 0.000625: 1; and the weight ratio of the conductive nanostructures to the surfactant is preferably in the range of about 560: 1 to about 5: 1.
  • the ratios of components of the coating solution may be modified depending on the substrate and the method of application used.
  • a preferred viscosity range for the coating solution is between about 1 and 100 cP.
  • the electrical conductivity of the conductive film is often measured by "sheet resistance," which is represented by Ohms/square (or “ohms/sq”).
  • the sheet resistance is a function of at least the surface loading density, the size/shapes of the nanostructures, and the intrinsic electrical property of the nanostructure constituents.
  • a thin film is considered conductive if it has a sheet resistance of no higher than 10 8 ohms/sq.
  • the sheet resistance is no higher than 10 4 ohms/sq, 3,000 ohms/sq, 1 ,000 ohms/sq, 350 ohms/sq, or 100 ohms/sq.
  • the sheet resistance of a conductive network formed by metal nanostructures is in the range of from 10 ohms/sq to 1000 ohms/sq, from 100 ohms/sq to 750 ohms/sq, 50 ohms/sq to 200 ohms/sq, from 100 ohms/sq to 500 ohms/sq, from 100 ohms/sq to 250 ohms/sq, 10 ohms/sq to 200 ohms/sq, from 10 ohms/sq to 50 ohms/sq, or from 1 ohms/sq to 10 ohms/sq.
  • the sheet resistance is typically less than 1000 ohms/sq, less than 500 ohms/sq, less than 100 ohms/sq, less than 50 ohms/square, less than 20 ohms/square, or less than 10 ohms/square.
  • the nanostructure-based transparent conductors have high light transmission in the visible region (400nm-700nm).
  • the transparent conductor is considered optically clear when the light transmission is more than 70%, or more typically more than 85% in the visible region. More preferably, the light transmission is more than 90%, more than 93%, or more than 95%.
  • a conductive film is optically transparent (e.g., more than 70% in transmission).
  • transparent conductor; transparent conductive film, layer or coating; conductive film, layer or coating; and transparent electrode are used interchangeably.
  • the substrate supports the nanostructure layer.
  • the substrate is the support on which the ink composition is directly coated to form the nanostructure film, as defined herein.
  • an intermediate layer i.e., an undercoat
  • an undercoat is coated on the substrate before the ink composition is coated.
  • the substrate can be rigid or flexible.
  • rigid substrates include glass, polycarbonates, acrylics, and the like.
  • flexible substrates include, but are not limited to: polyesters (e.g., polyethylene terephthalate (PET), polyester naphthalate, and polycarbonate), polyolefms (e.g., linear, branched, and cyclic polyolefms), polyvinyls (e.g., polyvinyl chloride, polyvinylidene chloride, polyvinyl acetals, polystyrene, polyacrylates, and the like), cellulose ester bases (e.g., cellulose triacetate, and cellulose acetate), polysulphones such as polyethersulphone, polyimides, silicones, and other conventional polymeric films.
  • polyesters e.g., polyethylene terephthalate (PET), polyester naphthalate, and polycarbonate
  • polyolefms e.g., linear, branched,
  • Silver nanowires were synthesized by the reduction of silver nitrate dissolved in ethylene glycol in the presence of poly(vinyl pyrrolidone) (PVP) following the "polyol” method described in, e.g., Y. Sun, B. Gates, B. Mayers, & Y. Xia, "Crystalline silver nanowires by soft solution processing," Nanoletters 2(2): 165-168, 2002.
  • a modified polyol method described in co-pending and co- owned U.S. Patent Application No. 11/766,552, produces more uniform silver nanowires at higher yields than does the conventional "polyol” method. This application is incorporated by reference herein in its entirety. Resulting nanowires primarily had lengths from about 13 ⁇ to about 17 ⁇ and diameters from about 25-45nm.
  • a standard coating composition for depositing metal nanowires comprises, by weight, from 0.0025% to 0.1% surfactant (e.g., a preferred range is from 0.0025% to 0.05% for the non-ionic surfactant ZONYL® FSO-100), from 0.02% to 4%) viscosity modifier (e.g., a preferred range is 0.02%> to 0.5%> for hydroxypropyl methylcellulose (HPMC), from 94.5% to 99.0% solvent, and from 0.05% to 1.4% metal nanowires.
  • This standard coating solution was used to form a reference film (SI), i.e., one without any dipole ligand.
  • ZONYL® FSA was added to the standard coating composition.
  • the silver nanowire:FSA ratio (by weight) was 1 :0.7. This dispersion was used to make films for samples S2 and S3 of Example 4.
  • the weight ratio of the silver nanowires and FSA can also be 1 :0.1 to 1 : 1.
  • the coating composition can be prepared based on a desired concentration of the nanowires, which is an index of the loading density of the final conductive film formed on the substrate.
  • the coating composition can be deposited on a substrate according to, for example, the methods described in co-pending U.S. Patent Application No. 11/504,822.
  • the Work function may be measured by an absolute scan with tip tracking.
  • the absolute scan is a scan of approximate dimensions of 6x6 cm 2 conducted with a 2mm diameter Kelvin probe tip.
  • the tip Work Function (WF) has been determined with reference to a pristine gold surface, the work function of which is 5.10eV.
  • the scan may be performed at a constant tip to sample spacing, i.e., tracking, to ensure accurate comparison with the same tip on different samples.
  • Both samples S2 and S3 were measured with Kelvin probe.
  • SI Three samples of conductive films were prepared (SI -S3) according to the method described in Example 2. Each sample was 15 x 15 mm 2 . The samples were affixed to the sample holder with a conductive tape. SI did not contain any FSA (dipole ligand) and was used as reference.
  • the work function data has standard deviations in the 20-100 meV range, which is consistent with macroscopic work function measurements on real surfaces, i.e., surfaces that contain modest inhomogeneity such as scratches.
  • the surfaces were well prepared, i.e., clean and free from fingerprints. The surfaces were further protected by lint-free tissue.
  • the standard deviation was expected to be less than 20meV.
  • the work function data of these samples are shown in Table 1 below.
  • the data are the mean WF across the whole scan area ⁇ e.g., 8 x 8 mm 2 ) and the standard deviation. These two values serve to differentiate between a homogeneous surface and one exhibiting significant artifacts.
  • the work function data are smoothed.
  • conductive films e.g., SI
  • conductive films formed of metal nanostructures without a dipole surface layer typically have work functions in the range of 4.5-4.7 eV.
  • the work function of S2-S3 increased by about 0.8 - 1.2 eV.
  • the work function distribution on a given conducive film is substantially uniform.

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PCT/US2012/027541 2011-03-04 2012-03-02 Method of tuning work function of metal nanostructure-based transparent conductor Ceased WO2012122034A1 (en)

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