TWI577237B - 調節基於金屬奈米結構之透明導體之工作函數之方法 - Google Patents

調節基於金屬奈米結構之透明導體之工作函數之方法 Download PDF

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Publication number
TWI577237B
TWI577237B TW101107221A TW101107221A TWI577237B TW I577237 B TWI577237 B TW I577237B TW 101107221 A TW101107221 A TW 101107221A TW 101107221 A TW101107221 A TW 101107221A TW I577237 B TWI577237 B TW I577237B
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TW
Taiwan
Prior art keywords
dipole
metal
ink composition
nanostructure
surface layer
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TW101107221A
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English (en)
Chinese (zh)
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TW201242425A (en
Inventor
佛羅倫 波史考特卡
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凱姆控股有限公司
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Publication of TW201242425A publication Critical patent/TW201242425A/zh
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Publication of TWI577237B publication Critical patent/TWI577237B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/76—Chemiluminescence; Bioluminescence
    • G01N21/763—Bioluminescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Electroluminescent Light Sources (AREA)
  • Conductive Materials (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
TW101107221A 2011-03-04 2012-03-03 調節基於金屬奈米結構之透明導體之工作函數之方法 TWI577237B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161449519P 2011-03-04 2011-03-04
US13/411,154 US8723216B2 (en) 2011-03-04 2012-03-02 Method of tuning work function of metal nanostructure-based transparent conductor
PCT/US2012/027541 WO2012122034A1 (en) 2011-03-04 2012-03-02 Method of tuning work function of metal nanostructure-based transparent conductor

Publications (2)

Publication Number Publication Date
TW201242425A TW201242425A (en) 2012-10-16
TWI577237B true TWI577237B (zh) 2017-04-01

Family

ID=45888479

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101107221A TWI577237B (zh) 2011-03-04 2012-03-03 調節基於金屬奈米結構之透明導體之工作函數之方法

Country Status (8)

Country Link
US (1) US8723216B2 (enExample)
EP (1) EP2681780B1 (enExample)
JP (1) JP2014511551A (enExample)
KR (1) KR20140020957A (enExample)
CN (1) CN103503191A (enExample)
SG (1) SG193253A1 (enExample)
TW (1) TWI577237B (enExample)
WO (1) WO2012122034A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10020807B2 (en) 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
JP6201345B2 (ja) * 2013-03-07 2017-09-27 三菱マテリアル株式会社 Ｉｔｏ粒子を製造する方法
JP2014224199A (ja) * 2013-05-16 2014-12-04 Ｄｏｗａエレクトロニクス株式会社 銀ナノワイヤインクの製造方法および銀ナノワイヤインク
FR3011973B1 (fr) 2013-10-10 2016-01-01 Commissariat Energie Atomique Materiau multicouches comprenant des nanofils metalliques et un polymere non conducteur electriquement
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US9183968B1 (en) 2014-07-31 2015-11-10 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
KR101930385B1 (ko) * 2014-11-05 2018-12-18 씨에이엠 홀딩 코포레이션 은 나노와이어-기반 투명 전도성 필름을 형성하기 위한 아이오다이드 첨가제를 갖는 단쇄 플루오로계면활성제
KR102685407B1 (ko) * 2019-08-02 2024-07-18 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
CN110739097B (zh) * 2019-11-07 2021-07-16 浙江大学 功函数可调的银纳米线复合透明导电薄膜的制备方法
FR3104173B1 (fr) 2019-12-06 2023-07-21 Centre Nat Rech Scient : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004127562A (ja) * 2002-09-30 2004-04-22 Tokai Rubber Ind Ltd 有機エレクトロルミネッセンス素子用透明電極およびそれを用いてなる有機エレクトロルミネッセンス素子
TW201200467A (en) * 2010-02-24 2012-01-01 Cambrios Technologies Corp Nanowire-based transparent conductors and methods of patterning same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US7776758B2 (en) * 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7635858B2 (en) * 2005-08-10 2009-12-22 Au Optronics Corporation Organic light-emitting device with improved layer conductivity distribution
EP1965438A3 (en) * 2005-08-12 2009-05-13 Cambrios Technologies Corporation Nanowires-based transparent conductors
JP2007149577A (ja) * 2005-11-30 2007-06-14 Alps Electric Co Ltd 発光装置
TWI397446B (zh) * 2006-06-21 2013-06-01 Cambrios Technologies Corp 控制奈米結構形成及形狀之方法
CN102324462B (zh) * 2006-10-12 2015-07-01 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
US20110001423A1 (en) * 2008-02-15 2011-01-06 Showa Denko K.K. Process for treating an electrode surface, electrode, and process for manufacturing organic electroluminescence devices
US8323744B2 (en) * 2009-01-09 2012-12-04 The Board Of Trustees Of The Leland Stanford Junior University Systems, methods, devices and arrangements for nanowire meshes
JP5533669B2 (ja) * 2009-01-19 2014-06-25 コニカミノルタ株式会社 透明電極、その製造方法及び有機エレクトロルミネッセンス素子
US20110024159A1 (en) * 2009-05-05 2011-02-03 Cambrios Technologies Corporation Reliable and durable conductive films comprising metal nanostructures
CN102460600B (zh) 2009-05-05 2016-06-01 凯博瑞奥斯技术公司 包含金属纳米结构的可靠且持久的导电膜
US9244012B2 (en) * 2011-09-26 2016-01-26 University Of Maryland, Baltimore County Enhanced luminescence from nanopolished surfaces and plate wells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004127562A (ja) * 2002-09-30 2004-04-22 Tokai Rubber Ind Ltd 有機エレクトロルミネッセンス素子用透明電極およびそれを用いてなる有機エレクトロルミネッセンス素子
TW201200467A (en) * 2010-02-24 2012-01-01 Cambrios Technologies Corp Nanowire-based transparent conductors and methods of patterning same

Also Published As

Publication number Publication date
TW201242425A (en) 2012-10-16
WO2012122034A1 (en) 2012-09-13
US20120223358A1 (en) 2012-09-06
CN103503191A (zh) 2014-01-08
EP2681780B1 (en) 2018-11-28
JP2014511551A (ja) 2014-05-15
EP2681780A1 (en) 2014-01-08
KR20140020957A (ko) 2014-02-19
SG193253A1 (en) 2013-10-30
US8723216B2 (en) 2014-05-13

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