CN103503191A - 调节基于金属纳米结构的透明导体的功函数的方法 - Google Patents

调节基于金属纳米结构的透明导体的功函数的方法 Download PDF

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Publication number
CN103503191A
CN103503191A CN201280011724.5A CN201280011724A CN103503191A CN 103503191 A CN103503191 A CN 103503191A CN 201280011724 A CN201280011724 A CN 201280011724A CN 103503191 A CN103503191 A CN 103503191A
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dipolar
ligand
ink composition
nanostructure
dipole
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Chinese (zh)
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弗络瑞恩·普舍尼茨卡
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Cambrios Technologies Corp
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Cambrios Technologies Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/76—Chemiluminescence; Bioluminescence
    • G01N21/763—Bioluminescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Conductive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
CN201280011724.5A 2011-03-04 2012-03-02 调节基于金属纳米结构的透明导体的功函数的方法 Pending CN103503191A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161449519P 2011-03-04 2011-03-04
US61/449,519 2011-03-04
PCT/US2012/027541 WO2012122034A1 (en) 2011-03-04 2012-03-02 Method of tuning work function of metal nanostructure-based transparent conductor

Publications (1)

Publication Number Publication Date
CN103503191A true CN103503191A (zh) 2014-01-08

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CN201280011724.5A Pending CN103503191A (zh) 2011-03-04 2012-03-02 调节基于金属纳米结构的透明导体的功函数的方法

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Country Link
US (1) US8723216B2 (enExample)
EP (1) EP2681780B1 (enExample)
JP (1) JP2014511551A (enExample)
KR (1) KR20140020957A (enExample)
CN (1) CN103503191A (enExample)
SG (1) SG193253A1 (enExample)
TW (1) TWI577237B (enExample)
WO (1) WO2012122034A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110739097A (zh) * 2019-11-07 2020-01-31 浙江大学 功函数可调的银纳米线复合透明导电薄膜的制备方法

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US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10020807B2 (en) 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
JP6201345B2 (ja) * 2013-03-07 2017-09-27 三菱マテリアル株式会社 Ｉｔｏ粒子を製造する方法
JP2014224199A (ja) * 2013-05-16 2014-12-04 Ｄｏｗａエレクトロニクス株式会社 銀ナノワイヤインクの製造方法および銀ナノワイヤインク
FR3011973B1 (fr) 2013-10-10 2016-01-01 Commissariat Energie Atomique Materiau multicouches comprenant des nanofils metalliques et un polymere non conducteur electriquement
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US9183968B1 (en) 2014-07-31 2015-11-10 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
WO2016073717A1 (en) * 2014-11-05 2016-05-12 Champ Great Int'l Corporation Short-chain fluorosurfactants with iodide additives for forming silver nanowire-based transparent conductive films
KR102685407B1 (ko) * 2019-08-02 2024-07-18 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
FR3104173B1 (fr) 2019-12-06 2023-07-21 Centre Nat Rech Scient : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent

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US20080210052A1 (en) * 2006-06-21 2008-09-04 Cambrios Technologies Corporation Methods of controlling nanostructure formations and shapes
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CN101512754A (zh) * 2006-07-28 2009-08-19 奈米系统股份有限公司 用来形成纳米结构单层的方法和器件，以及包括该单层的器件
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CN101292362A (zh) * 2005-08-12 2008-10-22 凯博瑞奥斯技术公司 基于纳米线的透明导体
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CN101512754A (zh) * 2006-07-28 2009-08-19 奈米系统股份有限公司 用来形成纳米结构单层的方法和器件，以及包括该单层的器件
CN101589473A (zh) * 2006-10-12 2009-11-25 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
CN101953231A (zh) * 2008-02-15 2011-01-19 昭和电工株式会社 电极的表面处理方法和电极、以及有机电致发光元件的制造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110739097A (zh) * 2019-11-07 2020-01-31 浙江大学 功函数可调的银纳米线复合透明导电薄膜的制备方法
CN110739097B (zh) * 2019-11-07 2021-07-16 浙江大学 功函数可调的银纳米线复合透明导电薄膜的制备方法

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SG193253A1 (en) 2013-10-30
JP2014511551A (ja) 2014-05-15
KR20140020957A (ko) 2014-02-19
WO2012122034A1 (en) 2012-09-13
EP2681780A1 (en) 2014-01-08
US20120223358A1 (en) 2012-09-06
US8723216B2 (en) 2014-05-13
TWI577237B (zh) 2017-04-01
EP2681780B1 (en) 2018-11-28
TW201242425A (en) 2012-10-16

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Application publication date: 20140108