WO2012121372A1 - Élément d'affichage et dispositif électronique - Google Patents

Élément d'affichage et dispositif électronique Download PDF

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Publication number
WO2012121372A1
WO2012121372A1 PCT/JP2012/056122 JP2012056122W WO2012121372A1 WO 2012121372 A1 WO2012121372 A1 WO 2012121372A1 JP 2012056122 W JP2012056122 W JP 2012056122W WO 2012121372 A1 WO2012121372 A1 WO 2012121372A1
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WIPO (PCT)
Prior art keywords
light
pixel
light emitting
wavelength
emitted
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PCT/JP2012/056122
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English (en)
Japanese (ja)
Inventor
大江　昌人
勇毅 小林
別所　久徳
晶子 岩田
近藤　克己
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シャープ株式会社
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Publication of WO2012121372A1 publication Critical patent/WO2012121372A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/04—Materials and properties dye
    • G02F2202/046—Materials and properties dye fluorescent

Definitions

  • the present invention relates to a display element used for display in which light emitted from a light emitting element such as a light emitting diode or a laser diode is subjected to light-to-light conversion by a phosphor layer, and an electronic apparatus including the display element.
  • the present invention relates to, for example, an organic EL display element in which organic EL elements (light-emitting elements) that emit light by organic electroluminescence (hereinafter sometimes abbreviated as organic EL) are arranged for each pixel, and more specifically, a specific configuration
  • organic EL organic electroluminescence
  • the present invention relates to an organic EL display element that has a wide viewing angle, high color purity, and can realize a highly efficient multicolor light emitting display element.
  • the present invention also relates to, for example, a display element in which light from a light emitting element is converted into light by a phosphor layer, and the light is modulated by a liquid crystal element and used for display.
  • the present invention also relates to a display element that uses an organic laser as a light source instead of the organic EL.
  • EL elements are self-luminous and have high visibility, and are completely solid elements, so that they have excellent impact resistance and are easy to handle. EL elements having such features are attracting attention as light sources for various display elements. EL elements are roughly classified into inorganic EL elements using an inorganic compound as a light-emitting material and organic EL elements using an organic compound. Organic EL elements have been actively researched for practical use since the applied voltage can be significantly reduced.
  • the organic EL element has a basic configuration in which a light emitting layer is disposed between an anode and a cathode. Moreover, the organic EL element can take the structure by which the electron carrying layer is arrange
  • An organic EL device having a structure in which a hole injecting and transporting layer is arranged has many holes injected into the light emitting layer at a lower electric field, and further, since the hole injecting and transporting layer does not transport electrons, it is injected into the light emitting layer. It is known that the electrons are accumulated at the interface between the hole injecting and transporting layer and the light emitting layer, and the luminous efficiency is increased.
  • a pixel that emits red light also referred to as a sub-pixel, hereinafter the same
  • a pixel that emits green light and a pixel that emits blue light constitute a single pixel set, and a large number of pixel sets are included.
  • This type of display element can produce various colors by additive color mixing of 3 pixels in each pixel set, and each pixel set can display a full color pixel.
  • An organic EL display element in which an organic EL element is arranged in each pixel is realized by, for example, separately applying a light emitting layer for each color pixel by a mask vapor deposition method using a shadow mask.
  • the substrate size is increasing from G6 to G8 and G10.
  • the substrate size In order to manufacture an organic EL display device, it is equal to or larger than the substrate size. It is necessary to make and process the mask.
  • the mask since the mask is made of a very thin metal (for example, 50 nm to 100 nm), it is difficult to increase the size, and as a result, it is difficult to realize a large-screen organic EL display element.
  • the vapor deposition source is disposed below the substrate, and the organic layer is deposited on the substrate from below by depositing the organic material. Therefore, as the substrate becomes larger (mask becomes larger), the deflection of the mask at the center becomes remarkable, which also causes the color mixture described above. In an extreme case, a portion where the organic layer is not formed is formed, resulting in a defect due to leakage between the cathode and the anode. Further, since the mask deteriorates and becomes unusable after being used a specific number of times, an increase in the size of the mask tends to increase the cost of the display element.
  • Patent Documents 1 to 3 use an organic EL element having a light emitting layer that emits light in a blue to blue-green wavelength band as a light source for each color pixel, and are emitted from the organic EL element. Light is converted into red light or green light according to the color of each pixel by the phosphor layer. For blue pixels, when the wavelength band of light emitted from the organic EL element (for example, bluish green) and the wavelength band of light to be emitted from the blue pixel are different, the purpose is to improve color purity.
  • the wavelength band of light emitted from the organic EL element for example, bluish green
  • the wavelength band of light to be emitted from the blue pixel are different, the purpose is to improve color purity.
  • a color filter that absorbs light other than blue a phosphor layer that receives blue-green light and emits blue light, or the like may be used. This method can reduce the labor and cost required for patterning the organic layer, and is superior in terms of manufacturing efficiency and cost, as compared with a method of painting each pixel of each color.
  • Patent Documents 1 to 3 can display a full-color image by converting blue excitation light into light-light by a phosphor layer.
  • this type of display element when light leaks in the optical path on the light source side of the phosphor layer, the phosphor layer is excited by the leaked light, and light emitted from each pixel does not become a desired light amount. there is a possibility.
  • an organic EL element is a surface-emitting light-emitting element, and it is difficult to obtain completely collimated light even though the directivity of light from the organic EL element can be enhanced by a microcavity effect by a resonator. . Therefore, the light emitted from each light emitting element becomes excitation light for the phosphor layer corresponding to the light emitting element, while part of the light becomes leakage light that travels toward other pixels. This leaked light excites the phosphor layer of the adjacent pixel, which may cause display defects as contrast reduction or crosstalk.
  • the above problems may occur not only in organic EL display elements in which organic EL elements are provided in each pixel, but also in other types of display elements.
  • a light source such as a light emitting diode (LED)
  • an optical switch device such as a liquid crystal element or a micromirror device (DMD)
  • the light whose amount is adjusted is changed to light of another color.
  • a display element that is converted and used for display it is difficult to make light passing through each pixel into highly directional light collimated like a laser. Therefore, even in this type of display element, light leaking to the phosphor layer of an adjacent pixel can cause the above-described display defect. Further, in this type of display element, the phosphor layer may be excited by leakage light from the optical switch device, which may cause the above-described display defect.
  • An aspect of the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a display element that can suppress a decrease in contrast and occurrence of crosstalk.
  • the display element includes a plurality of pixels including at least a first pixel that emits light having different wavelengths and a second pixel adjacent to the first pixel.
  • a plurality of elements arranged in a one-to-one correspondence with each pixel of the plurality of pixels, and emitting a first wavelength of light according to a pixel value of the corresponding pixel.
  • a light emitting unit having, a first fluorescent unit that is provided in the first pixel and converts light having a first wavelength incident from the light emitting unit into light having a second wavelength, and is provided in the first pixel.
  • the first light absorption unit may have a non-linear light absorption amount with respect to light intensity.
  • the display element according to the first aspect further includes a second fluorescent part that is provided in the second pixel and converts light having the first wavelength incident from the light emitting part into light having a third wavelength
  • the plurality of elements are provided in one-to-one correspondence with the pixels of the plurality of pixels, and are a plurality of light emitting elements that emit light with a light amount corresponding to a pixel value of the corresponding pixel, and correspond to the first pixel.
  • L is a distance obtained by orthogonally projecting the distance from the end of the light emitting surface of the light emitting element to the end of the light incident surface of the second fluorescent part in the direction perpendicular to the optical axis of the light emitting element corresponding to the first pixel.
  • the display element according to the first aspect further includes a second fluorescent part that is provided in the second pixel and converts light having the first wavelength incident from the light emitting part into light having a third wavelength
  • the plurality of elements are provided in one-to-one correspondence with the pixels of the plurality of pixels, and are a plurality of light emitting elements that emit light with a light amount corresponding to a pixel value of the corresponding pixel, and correspond to the first pixel.
  • L is a distance obtained by orthogonally projecting the distance from the end of the light emitting surface of the light emitting element to the end of the light incident surface of the second fluorescent part in the direction perpendicular to the optical axis of the light emitting element corresponding to the first pixel.
  • the light emitting element corresponding to the first pixel has a pixel value of the darkest gradation as 0, and a pixel value of the brightest gradation with respect to an integer N of 2 or more as N.
  • the light of the first wavelength can be emitted with the light amount of the gradation of each pixel value from 1 to N ⁇ 1
  • the P max is when the pixel value is N ⁇ 1
  • the light emitting element corresponding to the first pixel has a pixel value of the darkest gradation as 0, and a pixel value of the brightest gradation with respect to an integer N of 2 or more as N ⁇ .
  • N the number of pixels adjacent to the first pixel
  • A the following equation (4); y ⁇ P min / M ⁇ A (4) May be satisfied.
  • A represents the following formula (5): y ⁇ P max / M ⁇ A (5) May be satisfied.
  • each of the light-emitting elements includes at least an organic material sandwiched between the first electrode, the second electrode facing the first electrode, and the first electrode and the second electrode.
  • An organic layer including a light emitting layer may be provided, and the first electrode and the second electrode may constitute a resonator that resonates light emitted from the organic light emitting layer.
  • the light emitting unit further includes a light source unit that emits light of the first wavelength, and the plurality of elements emit light of the first wavelength emitted from the light source unit.
  • the light emitting unit has a value from 1 to N when a pixel value of the darkest gradation is 0 and a pixel value of the brightest gradation with respect to an integer N of 2 or more is N-1.
  • the light of the first wavelength can be emitted with the light amount of the gradation of each pixel value up to ⁇ 1, and the P max is the first emitted from the light emitting unit when the pixel value is N ⁇ 1.
  • the amount of light having a wavelength, where A is the following formula (7) when the light amount of the first wavelength emitted from the light emitting unit when the pixel value is 1 is P min ; P min / CR ⁇ A (7) You may be satisfied.
  • the first light absorbing portion may be disposed between the light emitting portion and the fluorescent portion.
  • the first fluorescent part may be disposed between the light emitting part and the first light absorbing part.
  • the first light absorption unit includes a second light absorption unit and a third light absorption unit
  • the second light absorption unit includes the light emitting unit and the first fluorescent unit.
  • the first fluorescent part may be arranged between the second light absorbing part and the third light absorbing part.
  • the first fluorescent part may be made of phosphor particles, and the first light absorbing part may cover the phosphor particles.
  • the wavelength of light emitted from the light emitting unit may be not less than 250 nm and not more than 500 nm.
  • the first light absorption portion may be formed of an organic material.
  • the first light absorbing portion may be formed of a material including at least one of a red pigment, a green pigment, and a blue pigment.
  • the first light absorbing portion may be formed of a metal material.
  • the electronic device includes the display element according to the first aspect.
  • FIG. 3 is an equivalent circuit diagram of one pixel in the first embodiment. It is sectional drawing which shows typically the structure of the display element in 1st Embodiment. It is a figure for demonstrating the light absorption amount of the light absorption part in 1st Embodiment. In 1st Embodiment, it is a graph which shows the ratio of the light quantity of the leakage light which occupies for the light quantity of the light inject
  • FIG. 1 is a conceptual diagram showing a display device configured to include the display element of the first embodiment.
  • FIG. 2 is an equivalent circuit diagram of one pixel of the display element.
  • FIG. 3 is a cross-sectional view schematically showing the configuration of the display element.
  • a display device (electronic device) 1 shown in FIG. 1 includes a display element 2A, a scanning circuit 3, a video signal driving circuit 4, a power supply circuit 5, and a controller 6.
  • the controller 6 can receive image data from a signal source S outside the display element 2A.
  • the controller 6 is electrically connected to each of the scanning circuit 3 and the video signal driving circuit 4 and can control the scanning circuit 3 and the video signal driving circuit 4 based on the image data.
  • the scanning circuit 3 and the video signal driving circuit 4 are electrically connected to the light emitting element 15 and the power supply circuit 5, respectively.
  • the scanning circuit 3 and the video signal driving circuit 4 can drive the display element 2 ⁇ / b> A using the power supplied from the power supply circuit 5, and cause the display element 2 ⁇ / b> A to display an image defined in the image data.
  • the display element 2A of the present embodiment has a plurality of pixel sets P arranged two-dimensionally.
  • One of the two arrangement directions of the pixel set may be referred to as a horizontal scanning direction, and the other of the two arrangement directions of the pixel set may be referred to as a vertical scanning direction.
  • Each pixel set P can display one full-color pixel.
  • Each pixel set P includes a plurality of pixels P1 to P3 that are continuous in one direction of the arrangement direction of the pixel set P.
  • Each pixel of the plurality of pixels P1 to P3 is a minimum unit of a region in which the amount of light emitted from the display element 2A can be controlled independently of each other.
  • the plurality of pixels P1 to P3 constituting each pixel set P have different wavelengths of emitted light.
  • the first pixel P1 can emit light in a red wavelength band (620 nm or more and less than 750 nm)
  • the second pixel P2 can emit light in a green wavelength band (495 nm or more and less than 570 nm).
  • the third pixel P3 can emit light in a blue wavelength band (450 nm or more and less than 495).
  • the pixel set P may be simply referred to as a pixel, and in this case, each of the plurality of pixels P1 to P3 is referred to as a sub-pixel.
  • the display element 2 ⁇ / b> A includes a plurality of scanning lines 10 and a plurality of signal lines 11.
  • the plurality of scanning lines 10 extend in parallel with each other and are all electrically connected to the scanning circuit 3.
  • the plurality of signal lines 11 extend in parallel to each other in the direction intersecting with the scanning line 10, and all of them are electrically connected to the video signal driving circuit 4.
  • each pixel of the display element 2 ⁇ / b> A includes a first switching element 12, a storage capacitor 13, a second switching element 14, and a light emitting element 15.
  • the gate electrode of the first switching element 12 is electrically connected to the scanning line 10.
  • the source region of the first switching element 12 is electrically connected to the signal line 11.
  • the drain region of the first switching element 12 is electrically connected to one electrode of the storage capacitor 13.
  • the other electrode of the storage capacitor 13 is electrically connected to the power supply circuit 5.
  • the second switching element 14 is connected in parallel with the storage capacitor 13.
  • the gate electrode of the second switching element 14 is electrically connected to the drain region of the first switching element 12.
  • the source region of the second switching element 14 is electrically connected to the power supply circuit 5.
  • the drain region of the second switching element 14 is electrically connected to the light emitting element 15.
  • the scanning circuit 3 supplies a scanning signal indicating the display (lighting) timing of each pixel to the scanning line 10.
  • the first switching element 12 is turned on at a predetermined timing by a scanning signal supplied via the scanning line 10.
  • the video signal driving circuit 4 supplies a driving signal (voltage waveform) corresponding to the pixel value of each pixel to the signal line 11, and this driving signal is supplied to the first switching element 12. Is supplied to the storage capacitor 13 and the second switching element 14 through the channel region.
  • the second switching element 14 is turned on by the above driving signal, and the holding capacitor 13 is charged by the driving signal, thereby holding the on state for a predetermined period.
  • the power supply circuit 5 supplies power (current) to the light emitting element 15 via the channel region of the second switching element 14.
  • the light emitting element 15 emits light of a light amount corresponding to the pixel value over a predetermined period by the power supplied from the power supply circuit 5.
  • the display element 2A of the present embodiment shown in FIG. 3 is opposed to the light emitting panel 20 in which the light emitting section (light emitting element 15) is disposed in each of the plurality of pixels P1 to P3, and the light emitting surface of the light emitting panel 20. It has the arrange
  • the sealing part 22 is formed of, for example, a resin material, and bonds the light emitting panel 20 and the phosphor substrate 21 to each other.
  • the light emitting panel 20 can emit light of the first wavelength with a light amount corresponding to the pixel value of the pixel from the light emitting element 15 of each pixel.
  • the first wavelength is set to a wavelength band including a wavelength band of blue light emitted from the third pixel P3.
  • the phosphor substrate 21 can appropriately convert the light having the first wavelength emitted from each light emitting element 15 into light having a wavelength corresponding to the color of each pixel and emit the light to the display side.
  • the blue light emitted from the light emitting element 15 is converted into red light by the phosphor substrate 21 and emitted from the display element 2A.
  • the blue light emitted from the light emitting element 15 is converted into green light by the phosphor substrate 21 and emitted from the display element 2A.
  • the third pixel P3 corresponding to blue the blue light emitted from the light emitting element 15 is emitted from the display element 2A with the diffusion angle adjusted by the phosphor substrate 21.
  • the first wavelength is set in the ultraviolet to blue wavelength band of 250 nm to 500 nm.
  • the first wavelength light may be ultraviolet light (having a wavelength of less than 380 nm), or may include ultraviolet light and blue light.
  • the first wavelength light may include at least one of purple light and green light in addition to ultraviolet light and blue light.
  • the light emitting panel 20 of this embodiment includes a TFT substrate 23, a plurality of light emitting elements 15 provided on the TFT substrate 23, and an inorganic sealing film 24 that hermetically seals the plurality of light emitting elements 15.
  • the light emitting element 15 is an organic EL element
  • the light emitting panel 20 is a top emission type organic EL panel.
  • the light emitted from the light emitting element 15 is extracted from the side opposite to the TFT substrate 23 to the outside of the display element 2A.
  • the light emitting panel 20 may be a bottom emission type in which light emitted from the light emitting element 15 is extracted to the outside through the TFT substrate 23.
  • the light emitting element 15 may be comprised by LED and the quantum dot.
  • the TFT substrate 23 of this embodiment is an active matrix substrate capable of actively driving a plurality of light emitting elements 15.
  • the TFT substrate 23 includes a base substrate 25, an element layer 26 formed on the base substrate 25, and a planarization layer 27 formed on the element layer 26.
  • the element layer 26 is an interlayer that insulates between various wirings such as the scanning line 10 and the signal line 11, various semiconductor elements such as the first switching element 12 and the second switching element 14, various wirings, and various semiconductor elements. Insulating film is included.
  • the plurality of light emitting elements 15 are each formed in the planarization layer 27 and electrically connected to various wirings and various semiconductor elements of the element layer 26 through contact holes and the like.
  • the base substrate 25 is a substrate appropriately selected from various substrates such as an insulating substrate made of an insulating material, a semiconductor substrate made of a semiconductor material, and a conductive substrate made of a conductive material.
  • the insulating substrate is, for example, an inorganic material substrate made of glass or quartz, a plastic substrate made of an organic material such as polyethylene terephthalate, polycarbazole, or polyimide, or a ceramic substrate made of alumina or the like.
  • the semiconductor substrate is a silicon substrate made of, for example, single crystal silicon.
  • the conductive substrate is a metal substrate made of a metal material such as aluminum (Al) or iron (Fe).
  • the material and dimensions of the base substrate 25 are not limited, and can be selected as appropriate according to the usage environment or application assumed for the display element 2A.
  • a base substrate made of a plastic substrate or a metal substrate can form a bent portion and a bent portion without stress.
  • the base substrate formed of a metal substrate can suppress a deterioration gas (for example, water vapor or oxygen gas) that deteriorates the light emitting element 15 from entering the light emitting element 15.
  • the base substrate 25 may be a substrate in which at least one of an insulating film, a semiconductor film, and a conductive film is formed on the surface of each of the various substrates.
  • the base substrate 25 may be a substrate in which various surface treatments such as an insulation treatment are performed on the surfaces of the various substrates.
  • a base substrate having a structure in which a plastic substrate is coated with an inorganic material is advantageous in terms of weight reduction and improvement in flexibility.
  • the above-described deteriorated gas is transferred to the light emitting element 15 by a layer made of an inorganic material. Intrusion can also be suppressed.
  • the base substrate 25 having a configuration in which the surface of a metal substrate made of Al or the like is subjected to insulation treatment by an anodic oxidation method or the like is capable of suppressing intrusion of deteriorated gas, and in addition, is a portion subjected to insulation treatment
  • the occurrence of leakage (short circuit) of the light emitting element 15 due to the protrusion of the metal substrate can be suppressed.
  • the material of the base substrate 25 is selected according to the process conditions when forming each component on the base substrate 25.
  • the substrate is made of a material that does not melt at the process temperature (for example, 500 ° C.) at the time of forming the switching element, hardly generates distortion, and is chemically stable. Is selected.
  • a general metal substrate differs in thermal expansion coefficient from glass, it is difficult to form a switching element on a metal substrate using the apparatus etc. which form a switching element on the conventional glass substrate.
  • a switching element can be formed on the base substrate 25 at a low cost by using a normal device or the like.
  • An example of an alloy having a linear expansion coefficient comparable to that of glass is an iron-nickel alloy having a linear expansion coefficient of 1 ⁇ 10 ⁇ 5 / ° C. or less.
  • the switching element formed on another substrate such as a glass substrate may be transferred onto the base substrate 25. it can.
  • the base substrate 25 may be made of a material that almost completely transmits visible light, or may be made of a material that reflects at least part of visible light, or is visible. A material that absorbs at least part of the light may be used. Further, when the light emitting panel 20 is a bottom emission type, the base substrate 25 is selected from a material that transmits at least a part of visible light.
  • the first switching element 12 and the second switching element 14 of the element layer 26 are formed on the base substrate 25 in advance before the light emitting element 15 is formed.
  • the first switching element 12 and the second switching element 14 of the present embodiment are configured by known thin film transistors (hereinafter referred to as TFTs).
  • TFTs thin film transistors
  • at least one of the first switching element 12 and the second switching element 14 may be configured by an element capable of switching an electrical signal other than the TFT, such as a metal-insulator-metal (MIM) diode.
  • MIM metal-insulator-metal
  • the TFT can be formed using a known material, structure, and formation method, and the formation material, structure, and formation method are not limited.
  • amorphous silicon amorphous silicon
  • polycrystalline silicon polysilicon
  • microcrystalline silicon inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-gallium oxide-
  • oxide semiconductor material such as zinc oxide
  • organic semiconductor material such as a polythiophene derivative, a thiophene oligomer, a poly (p-ferylene vinylene) derivative, naphthacene, or pentacene
  • Examples of the TFT structure include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.
  • the method for forming the active layer constituting the TFT include the following first to sixth methods.
  • the first method is a method in which impurities are ion-doped into amorphous silicon formed by a plasma induced chemical vapor deposition (PECVD) method.
  • the second method is to form amorphous silicon by low pressure chemical vapor deposition (LPCVD) using silane (SiH4) gas, crystallize amorphous silicon by solid phase growth to obtain polysilicon, and then implant ions. This is a method of ion doping by the method.
  • PECVD plasma induced chemical vapor deposition
  • LPCVD low pressure chemical vapor deposition
  • SiH4 silane
  • This is a method of ion doping by the method.
  • amorphous silicon is formed by LPCVD using Si 2 H 6 gas or PECVD using SiH 4 gas, annealed by laser such as excimer laser, and amorphous silicon is crystallized to obtain polysilicon. Then, a method of performing ion doping (low temperature process).
  • a polysilicon layer is formed by LPCVD or PECVD, a gate insulating film is formed by thermal oxidation at 1000 ° C. or higher, an n + polysilicon gate electrode is formed thereon, and then This is a method of performing ion doping (high temperature process).
  • the fifth method is a method of forming an organic semiconductor material by an inkjet method or the like.
  • the sixth method includes a method of obtaining a single crystal film of an organic semiconductor material.
  • the gate insulating film of the TFT can be formed using a known material. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film.
  • electrodes such as a gate electrode, a source electrode, and a drain electrode of a TFT, and wiring such as a scanning line and a signal line connected to the TFT can be formed using a known material and a forming method. There is no limitation on the forming method. Examples of the electrode and wiring material include tantalum (Ta), aluminum (Al), and copper (Cu).
  • the interlayer insulating film of the element layer 26 can be formed using a known material and a forming method, and the material and the forming method are not limited.
  • the material for the interlayer insulating film include inorganic materials such as silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O 5 ), acrylic resin, Examples thereof include organic materials such as resist materials.
  • Examples of the method for forming the interlayer insulating film include a dry process such as a chemical vapor deposition (CVD) method and a vacuum deposition method, and a wet process such as a spin coating method.
  • CVD chemical vapor deposition
  • a vacuum deposition method such as a spin coating method.
  • the interlayer insulating film may be patterned by a photolithography method, an etching method, or the like, if necessary. Further, the insulating film appropriately used for the display element 2A may be formed using the same material or forming method as the interlayer insulating film.
  • the light emitting panel 20 may be a bottom emission type, and the interlayer insulating film may be formed of a light shielding material. With such a configuration, it is possible to suppress the light from entering the TFT, and to reduce the change in characteristics of the TFT due to the light.
  • the type of the light shielding material is not limited, but for example, a material in which a pigment or dye such as phthalocyanine or quinacridone is dispersed in a polymer resin such as polyimide, a color resist, a black matrix material, Ni x Zn y Fe 2 O 4 or the like. Inorganic insulating materials.
  • the planarization layer 27 is formed so that the surface of the planarization layer 27 becomes flat by embedding the unevenness.
  • the planarization layer 27 can be formed using a known material and a forming method, and the material and the forming method are not limited.
  • the planarizing layer 27 may have a single layer structure or a multilayer structure. Examples of the material of the planarizing layer 27 include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material.
  • Examples of the method for forming the planarizing layer 27 include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method.
  • a dry process such as a CVD method and a vacuum deposition method
  • a wet process such as a spin coating method.
  • the plurality of light emitting elements 15 of the present embodiment can each emit blue light as the first wavelength light.
  • Each light emitting element 15 includes a first electrode 30, a second electrode 31 disposed opposite to the first electrode 30, and an organic layer 32 disposed between the first electrode 30 and the second electrode 31.
  • the first electrode 30 of this embodiment is an anode that supplies holes to the organic layer 32.
  • the second electrode 31 of the present embodiment is a cathode that supplies electrons to the organic layer 32.
  • the organic layer 32 includes at least an organic light emitting layer 33 made of an organic light emitting material.
  • the organic layer 32 can emit light having a wavelength corresponding to the material of the organic layer 32 by utilizing recombination energy between holes supplied from the anode and electrons supplied from the cathode.
  • the first electrode may be a cathode and the second electrode may be an anode.
  • the first electrode 30 of the present embodiment is an electrode (pixel electrode) provided independently for each pixel.
  • the first electrode 30 is provided in an island shape on the planarization layer 27 and is electrically connected to the drain region of the second switching element 14 via the planarization layer 27.
  • the first electrode 30 can be formed of a conductive material selected as appropriate, and may have a single layer structure or a multilayer structure.
  • the first electrode 30 of this embodiment includes a surface layer 34 that is in contact with the organic layer 32, and a reflective layer 35 that is provided on the opposite side of the surface layer 34 from the organic layer 32.
  • the surface layer 34 is formed of a light-transmitting material having a work function of 4.5 eV or more.
  • the reflective layer 35 is provided in contact with the surface layer 34, and is formed of a conductive material having a characteristic that reflects light emitted from the organic layer 32. Since the work function of the portion (surface layer 34) in contact with the organic layer 32 in the first electrode 30 is 4.5 eV or more, holes are efficiently injected from the first electrode 30 into the organic layer 32.
  • Materials having a work function of 4.5 eV or more include metals such as gold (Au), platinum (Pt), nickel (Ni), indium tin oxide (ITO), tin oxide (SnO 2 ), and indium zinc oxide. Transparent electrode materials and the like.
  • the reflective layer 35 can be omitted when the surface layer 34 is formed of a light reflecting material or when the light emitting panel 20 is a bottom emission type.
  • the second electrode 31 of the present embodiment is an electrode (common electrode) provided in common for a plurality of pixels.
  • the second electrode 31 is provided so as to sandwich the organic layer 32 between the first electrode 30 and the second electrode 31.
  • the second electrode 31 is electrically connected to the element layer 26 via a wiring portion (not shown), and is held at the ground potential (see FIG. 3).
  • the second electrode 31 can be formed of an appropriately selected conductive material, and may have a single layer structure or a multilayer structure.
  • the second electrode 31 of this embodiment is formed of a light-transmitting material having a work function of less than 4.5 eV. Thereby, electrons are efficiently injected from the second electrode 31 into the organic layer 32.
  • Materials having a work function of less than 4.5 eV include metals such as lithium (Li), calcium (Ca), cerium (Ce), barium (Ba), aluminum (Al), and Mg: Ag alloys containing these metals. And alloys such as Li: Al alloy.
  • the first electrode 30 and the second electrode 31 can be formed by a known forming method using the above materials, and the forming method is not limited.
  • the electrode forming method include EB vapor deposition, sputtering, ion plating, and resistance heating vapor deposition.
  • at least one of the first electrode 30 and the second electrode 31 may be patterned as necessary.
  • the patterning technique a known technique can be used, and there is no limitation. Examples of the patterning technique include a photolithographic method and an etching method, a laser peeling method, a mask vapor deposition method using a shadow mask, and the like.
  • the thickness of various electrodes such as the first electrode 30 and the second electrode 31 and various wirings may be 50 nm or more. If the film thickness of the electrode or the wiring is 50 nm or more, the resistance of the electrode or the wiring is reduced to such an extent that an increase in the driving voltage of the display element 2A can be suppressed.
  • the second electrode 31 of the present embodiment has a characteristic that a part of light incident from the organic layer 32 is reflected.
  • the first electrode 30 and the second electrode 31 function as a pair of resonance mirrors and constitute a resonator using the microcavity effect.
  • the reflectance of the second electrode 31 of this embodiment is set so that the light emitted from the organic layer 32 resonates to such an extent that it does not cause laser oscillation. As the light emitted from the organic layer 32 resonates, color purity, light emission efficiency, front luminance, and the like can be improved.
  • the second electrode 31 may be made of silver and may have a film thickness of 5 nm or more and 30 nm or less from the viewpoint of reflectance and transmittance. . If the film thickness of the second electrode 31 is 5 nm or more, the reflectance at the second electrode 31 can be ensured to the extent that the microcavity effect is obtained. Moreover, if the film thickness of the 2nd electrode 31 is 30 nm or less, the transmittance
  • An auxiliary wiring that substantially reduces the resistance of the second electrode 31 is provided around the second electrode 31 of each pixel as necessary. The auxiliary wiring can also be handled as a part of the second electrode 31.
  • the material of the resonant mirror (the reflective layer 35 of the first electrode 30) paired with the second electrode 31 is, for example, aluminum, silver, gold, aluminum-lithium alloy, aluminum-neodymium alloy, aluminum-silicon alloy, or the like.
  • the reflective metal electrode is mentioned. Since these reflective metal electrodes have a particularly high reflectivity with respect to visible light, the microcavity effect can be improved.
  • the edge cover 36 is provided so as to cover the outer edge portion viewed from the thickness direction of the first electrode 30.
  • the edge cover 36 is formed across the outer edge portions of the plurality of first electrodes 30 and between the plurality of first electrodes 30.
  • the edge cover 36 can suppress the occurrence of leakage between the plurality of first electrodes 30 and the occurrence of leakage between the first electrode 30 and the second electrode 31.
  • the edge cover 36 can be formed by using a known material and a forming method, and the material, the size, and the forming method are not limited.
  • the material of the edge cover 36 include insulating materials such as SiO 2 , SiON, SiN, SiOC, SiC, HfSiON, ZrO, HfO, and LaO.
  • the method for forming the edge cover 36 include EB vapor deposition, sputtering, ion plating, and resistance heating vapor deposition.
  • the edge cover 36 may be patterned using, for example, the above patterning technique as necessary.
  • the film thickness of the edge cover 36 may be 100 nm or more and 2000 nm or less. If the film thickness of the edge cover 36 is 100 nm or more, leakage between the first electrode 30 and the second electrode 31 can be almost certainly prevented, and an increase in power consumption and non-light emission of the light emitting element 15 are prevented. can do. If the film thickness of the edge cover 36 is 2000 nm or less, it is possible to avoid a decrease in manufacturing efficiency due to a long process of forming the edge cover 36, and disconnection of the second electrode 31 at the edge cover 36 is avoided. It can also be prevented.
  • the organic layer 32 of this embodiment includes an organic light emitting layer 33, a hole injection / transport layer 37 disposed between the organic light emitting layer 33 and the first electrode 30, and between the organic light emitting layer 33 and the second electrode 31.
  • An electron injecting and transporting layer 38 is disposed.
  • the configuration of the organic layer 32 is not limited as long as the organic light emitting layer 33 is included. That is, the organic layer 32 may have a single layer structure of the organic light emitting layer 33, or at least one layer of a charge injection / transport layer and a charge prevention layer (a hole prevention layer, an electron prevention layer) that suppresses the movement of charges is an organic layer.
  • a multilayer structure laminated on the light emitting layer 33 may be used.
  • Said hole prevention layer suppresses a hole moving from an organic light emitting layer to a cathode.
  • Said electron prevention layer suppresses that an electron moves from an organic light emitting layer to an anode.
  • the organic layer 32 may have any of the following first to ninth configurations, for example.
  • the organic layer of 1st structure is comprised only with the organic light emitting layer.
  • the organic layer having the second configuration includes a hole transport layer disposed between the organic light emitting layer and the anode (hole transport layer / organic light emitting layer).
  • the organic layer of the third configuration includes an electron transport layer disposed between the organic light emitting layer and the cathode (organic light emitting layer / electron transport layer).
  • the organic layer having the fourth configuration includes a hole transport layer disposed between the organic light emitting layer and the anode (hole transport layer / organic light emitting layer / electron transport layer).
  • the organic layer of the fifth configuration has a hole injection layer disposed between the hole transport layer and the anode in addition to the fourth configuration (hole injection layer / hole transport layer / organic light emitting layer / electron). Transport layer).
  • the organic layer of the sixth configuration has an electron injection layer disposed between the electron transport layer and the cathode in addition to the fifth configuration (hole injection layer / hole transport layer / organic light emitting layer / electron transport layer). / Electron injection layer).
  • the organic layer of the seventh configuration includes a hole blocking layer disposed between the organic light emitting layer and the electron transport layer (hole injection layer / hole transport layer / organic light emitting layer / Hole prevention layer / electron transport layer).
  • the organic layer of the eighth configuration includes a hole blocking layer disposed between the organic light emitting layer and the electron transport layer (hole injection layer / hole transport layer / organic light emitting layer / Hole prevention layer / electron transport layer / electron injection layer).
  • the organic layer of the ninth configuration includes an electron blocking layer disposed between the hole transport layer and the organic light emitting layer (hole injection layer / hole transport layer / electron blocking layer / Organic light emitting layer / hole blocking layer / electron transport layer / electron injection layer).
  • Each layer of the organic light emitting layer, the hole injection layer, the hole transport layer, the hole prevention layer, the electron prevention layer, the electron transport layer, and the electron injection layer may have a single layer structure or a multilayer structure.
  • the organic light emitting layer 33 may be composed only of the organic light emitting material exemplified below, or may be composed of a combination of a light emitting dopant and a host material, and optionally a hole transport material, an electron transport material, Additives (donor, acceptor, etc.) may be included, and these materials may be dispersed in a polymer material (binding resin) or an inorganic material. If the organic light emitting layer 33 is formed of a material in which a light emitting dopant is dispersed in a host material, it is advantageous in terms of light emission efficiency and lifetime.
  • the organic light emitting material a known light emitting material for organic EL can be used, and the type thereof is not limited.
  • the light emitting material is classified into a low molecular light emitting material, a polymer light emitting material, and the like.
  • the light emitting material may be classified into a fluorescent material, a phosphorescent material and the like. Use of a phosphorescent material as the organic light emitting material is advantageous from the viewpoint of reducing power consumption.
  • low-molecular organic light-emitting material examples include aromatic dimethylidene compounds such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 5-methyl-2- [2- [4- ( Oxadiazole compounds such as 5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole, 3- (4-biphenylyl) -4-phenyl-5-t-butylphenyl-1,2,4- Examples thereof include triazole derivatives such as triazole (TAZ), styrylbenzene compounds such as 1,4-bis (2-methylstyryl) benzene, and fluorescent organic materials such as fluorenone derivatives.
  • aromatic dimethylidene compounds such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 5-methyl-2- [2- [4- ( Oxadiazole compounds such as 5-methyl-2-benzoxazolyl) phen
  • polymer light-emitting material examples include polyphenylene vinylene derivatives such as poly (2-decyloxy-1,4-phenylene) (DO-PPP), and polyspiro derivatives such as poly (9,9-dioctylfluorene) (PDAF). Can be mentioned.
  • the light-emitting dopant a known dopant material for organic EL can be used, and the kind thereof is not limited.
  • the dopant material include fluorescent materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate, iridium (III) (FIrpic), and bis (4 ′, 6′- Examples thereof include phosphorescent organic metal complexes such as difluorophenylpolydinato) tetrakis (1-pyrazolyl) borate, iridium (III) (FIr6), and the like.
  • a known host material for organic EL can be used, and the type thereof is not limited.
  • the host material the above-described low molecular light emitting material, polymer light emitting material, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene (CPF), 3,6- Carbazole derivatives such as bis (triphenylsilyl) carbazole (mCP) and (PCF), aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3-bis (9 Fluorene derivatives such as -phenyl-9H-fluoren-9-yl) benzene (mDPFB) and 1,4-bis (9-phenyl-9H-fluoren-9-yl) benzene (pDPFB).
  • the charge injection / transport layer is used to more efficiently inject charges (holes, electrons) from the electrode and transport (injection) to the light emitting layer, and the charge injection layer (hole injection layer, electron injection layer). It is classified as a transport layer (hole transport layer, electron transport layer).
  • the charge injecting and transporting layer may be composed only of the charge injecting and transporting material exemplified below, and may optionally contain additives (donor, acceptor, etc.), and these materials are polymer materials (conjugation). Wear resin) or a structure dispersed in an inorganic material.
  • the charge injecting and transporting material a known charge transporting material for organic EL or organic photoconductor can be used, and the kind thereof is not limited.
  • the charge injection transport material is classified into a hole injection transport material and an electron injection transport material.
  • the hole injection material and the hole transport material include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis ( Aromatics such as 3-methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD)
  • Low molecular weight materials such as tertiary amine compounds, hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythiophene / polystyrene sulfonate (PEDOT / PSS), poly (triphenylamine) derivatives (Poly-TPD), polyvinylcarbazole ( P
  • a material having a lower energy level of the highest occupied molecular orbital (HOMO) than the material used for the hole transport layer is used as the material for the hole injection layer, holes are efficiently injected and transported from the anode. Become so.
  • the material used for the hole transport layer may have a higher hole mobility than the material used for the hole injection layer.
  • an acceptor is doped into the hole injection / transport material, the hole injection / transport property can be improved.
  • a known acceptor material for organic EL can be used, and the type thereof is not limited.
  • Acceptor materials include Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ) and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF 4 (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc.
  • TNF trinitrofluorenone
  • DNF dinitrofluorenone
  • organic materials such as fluoranyl, chloranil and bromanyl.
  • Examples of the electron injection material and the electron transport material include inorganic materials that are n-type semiconductors, oxadiazole derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, benzodifurans. Low molecular materials such as derivatives; polymer materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS).
  • examples of the electron injection material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • a material having a higher energy level of the lowest unoccupied molecular orbital (LUMO) than a material used for the electron transport layer is used as a material used for the electron injection layer, electrons are efficiently injected and transported from the cathode. Become.
  • an electron injection material and an electron transport material are doped with a donor, electron injection and transport properties can be improved.
  • the donor a known donor material for organic EL can be used, and the type is not limited.
  • Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, and In, anilines, phenylenediamines, benzidines (N, N, N ′, N′-tetraphenyl) Benzidine, N, N′-bis- (3-methylphenyl) -N, N′-bis- (phenyl) -benzidine, N, N′-di (naphthalen-1-yl) -N, N′-diphenyl- Benzidine, etc.), triphenylamines (triphenylamine, 4,4′4 ′′ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N-3- Methylphenyl-N-phenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N- (1-naphthyl) -
  • Each layer constituting the organic layer 32 can be formed by a wet process or a dry process.
  • a functional liquid in which the above materials are dissolved or dispersed in a solvent is used.
  • This functional liquid may contain additives for adjusting the physical properties of the coating liquid, such as a leveling agent and a viscosity modifier.
  • wet processes include spin coating methods, dipping methods, doctor blade methods, discharge coating methods, spray coating methods, and other coating methods, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, microgravure coating methods, and the like. The printing method etc. are mentioned.
  • dry process include EB vapor deposition, molecular beam epitaxy (MBE), sputtering, organic vapor deposition (OVPD), and laser transfer.
  • the film thickness of each layer constituting the organic layer 32 may be 1 nm or more and 1000 nm or more, or 10 nm or more and 200 nm or less. If the thickness of each layer constituting the organic layer 32 is 10 nm or more, the physical properties required for each layer, for example, charge injection characteristics, transport characteristics, confinement characteristics, etc. can be sufficiently obtained, and pixel defects caused by foreign matters such as dust Is unlikely to occur. Further, if the thickness of each layer constituting the organic layer 32 is 200 nm or less, the resistance of the organic layer can be suppressed to the extent that an increase in power consumption due to an increase in driving voltage of the display element 2A can be avoided.
  • the phosphor substrate 21 includes a sealing substrate 40, a phosphor layer 41 formed on the sealing substrate 40, a film-shaped light absorption part 42 formed on the phosphor layer 41, and a sealing substrate 40. On the other hand, it has a conductive film 43 provided on the side opposite to the phosphor layer 41.
  • the phosphor layer 41 includes a first fluorescent part 44 arranged in the first pixel P1, a second fluorescent part 45 arranged in the second pixel P2, and a diffusion part arranged in the third pixel. 46, a light shielding part 47 provided between the plurality of pixels P1 to P3, and a wavelength selection film 48 provided on each of the first fluorescent part 44, the second fluorescent part 45, and the diffusion part 46, respectively.
  • the sealing substrate 40 is a light-transmitting substrate selected from the various substrates described as examples of the base substrate 25.
  • the sealing substrate 40 seals the light emitting element 15 together with the sealing portion 22.
  • the sealing portion 22 of the present embodiment is made of a light-transmitting resin material, fills the space between the light absorbing portion 42 and the light emitting element 15, and includes the TFT substrate 23 and the sealing substrate 40 outside the display region. Is glued.
  • the sealing portion 22 is formed, for example, by applying a resin material on the second electrode 31 using a spin coating method, ODF, or a lamination method, or by bonding a resin sheet on the second electrode. Can do.
  • the sealing portion 22 may have a single layer structure or a multilayer structure, and may include, for example, an inorganic sealing film and an organic sealing film.
  • the inorganic sealing film can function as a gas barrier film that suppresses the intrusion of moisture into the light emitting element 15.
  • an inorganic sealing film such as SiO 2 , SiON, SiN or the like is formed on the second electrode 31 by plasma CVD, ion plating, ion beam, sputtering, or the like. Later, it can be formed by applying a resin material on the inorganic sealing film by using a spin coating method, ODF, or a laminating method, or by bonding a resin sheet on the inorganic sealing film. .
  • the sealing portion for hermetically sealing the light emitting element 15 for example, an adhesive portion that bonds the sealing substrate 40 and the TFT substrate 23 to each other so as to surround the display region in an annular shape, and an enclosure inside the adhesive portion
  • the structure which has the gas layer containing the made inert gas may be sufficient.
  • the inert gas is, for example, nitrogen gas or argon gas.
  • a moisture absorbent such as barium oxide may be disposed inside the gas layer. With this hygroscopic agent, deterioration of the organic EL element due to moisture can be effectively suppressed.
  • the conductive film 43 is a thin film made of a metal material having translucency, for example.
  • the conductive film 43 can be used as an electrical or magnetic shield, and can suppress intrusion of noise from the outside of the display element 2A.
  • the conductive film 43 has a periodic structure, so that light incident on the conductive film 43 is diffracted and light extraction efficiency can be improved.
  • the first fluorescent part 44, the second fluorescent part 45, and the diffusing part 46 are spaced apart from each other and are provided in an island shape.
  • the first fluorescent part 44, the second fluorescent part 45, and the diffusing part 46 are viewed from the thickness direction of the phosphor layer 41 as they move away from the light emitting element 15 in the thickness direction of the phosphor layer 41.
  • the taper shape expands the outer shape.
  • the range occupied by each pixel is the light emission of each fluorescent part (first fluorescent part 44 or second fluorescent part 45, the same applies hereinafter) or the diffusing part 46 viewed from the thickness direction of the phosphor layer 41. This is the range occupied by the end face opposite to the element 15.
  • the first fluorescent unit 44 provided in the first pixel P1 corresponding to red emits light having a first wavelength (blue light) incident from the light emitting element 15 of the first pixel P1. Conversion to light of the second wavelength (red light).
  • the second fluorescent part 45 provided in the second pixel P2 corresponding to green converts the first wavelength light incident from the light emitting element 15 of the second pixel P2 into the third wavelength light (green light).
  • the diffusion unit 46 provided in the third pixel P3 corresponding to blue diffuses the light of the first wavelength incident from the light emitting element 15 of the third pixel P3, and the light emitted from each fluorescent unit and the diffusion unit The angle of diffusion is aligned with the light emitted from 46.
  • the first fluorescent part 44 and the second fluorescent part 45 can be formed using a known phosphor material and formation method, and the material and the formation method are not limited.
  • the phosphor material is roughly classified into an organic phosphor material and an inorganic phosphor material.
  • the inorganic phosphor material is less deteriorated by excitation light and light emission than the organic phosphor material.
  • organic phosphor material examples include the following materials.
  • fluorescent dyes that convert ultraviolet excitation light into blue light emission include stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene, coumarin dyes: 7- And hydroxy-4-methylcoumarin.
  • fluorescent dyes that convert ultraviolet or blue excitation light into green light emission include coumarin dyes: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh).
  • Examples of the inorganic phosphor material include the following materials.
  • Phosphors that convert ultraviolet excitation light into blue light emission include Sr 2 P 2 O 7 : Sn 4+ , Sr 4 Al 14 O 25 : Eu 2+ , BaMgAl 10 O 17 : Eu 2+ , SrGa 2 S 4 : Ce 3+ , CaGa 2 S 4 : Ce 3+ , (Ba, Sr) (Mg, Mn) Al 10 O 17 : Eu 2+ , (Sr, Ca, Ba 2 , 0 Mg) 10 (PO 4 ) 6 Cl 2 : Eu 2+ BaAl 2 SiO 8 : Eu 2+ , Sr 2 P 2 O 7 : Eu 2+ , Sr 5 (PO 4 ) 3 Cl: Eu 2+ , (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu 2+ , BaMg 2 Al 16 O 27: Eu 2+ , (Ba, Ca) 5 (PO 4) 3 Cl: Eu 2+
  • Y 2 O 2 S Eu 3+ , YAlO 3 : Eu 3+ , Ca 2 Y 2 (SiO 4 ) 6 : Eu 3+ , LiY 9 ( SiO 4 ) 6 O 2 : Eu 3+ , YVO 4 : Eu 3+ , CaS: Eu 3+ , Gd 2 O 3 : Eu 3+ , Gd 2 O 2 S: Eu 3+ , Y (P, V) O 4 : Eu 3+ , Mg 4 GeO 5.5 F: Mn 4+ , Mg 4 GeO 6 : Mn 4+ , K 5 Eu 2.5 (WO 4 ) 6.25 , Na 5 Eu 2.5 (WO 4 ) 6.25 , K 5 Eu 2.5 (MoO 4 ) 6.25 , Na 5 Eu 2.5 (MoO 4 ) 6.25, and the like.
  • the above-described inorganic phosphor may be subjected to surface modification treatment as necessary.
  • the surface modification treatment include chemical treatment using a silane coupling agent, physical treatment using addition of submicron order fine particles, and combinations thereof.
  • the average particle diameter (d50, the same applies hereinafter) of the phosphor particles may be 1 ⁇ m or more and 50 ⁇ m or less.
  • the average particle size is 1 ⁇ m or more, the luminous efficiency of the phosphor is increased.
  • the gap for example, the refractive index is 1.0
  • the fluorescent part for example, the refractive index is 2.3
  • the loss of light when the average particle diameter of the phosphor particles is 50 ⁇ m or less, the loss of light can be reduced, and the decrease in the light emission efficiency of each fluorescent part can be suppressed.
  • a flattening layer for flattening the surface (surface facing the light emitting element 15) of the phosphor layer 41 using an inorganic phosphor or an organic phosphor as a material may be provided.
  • This flattening layer it is possible to suppress a decrease in the light emission efficiency of each fluorescent part, increase the adhesion between the light emitting panel 20 and the phosphor substrate 21, and the like.
  • a photosensitive resin is used as the polymer resin used for the binder, patterning by photolithography is facilitated.
  • a known material can be used for the photosensitive resin, and the type thereof is not limited.
  • the photosensitive resin for example, one kind of photosensitive resin (photo-curable resist material) having a reactive vinyl group such as acrylic acid resin, methacrylic acid resin, poly vinyl cinnamate resin, and hard rubber resin. Alternatively, a plurality of types of mixtures can be used.
  • Each fluorescent part can be formed by a wet process or a dry process depending on the material.
  • a phosphor layer forming coating solution in which the above phosphor material and resin material are dissolved and dispersed in a solvent is used.
  • wet processes include spin coating methods, dipping methods, doctor blade methods, discharge coating methods, spray coating methods, and other coating methods, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, microgravure coating methods, and the like. The printing method etc. are mentioned.
  • the dry process include resistance heating vapor deposition, EB vapor deposition, molecular beam epitaxy (MBE), sputtering, organic vapor deposition (OVPD), and laser transfer.
  • the film thickness of the phosphor layer 41 is, for example, 100 nm to 100 ⁇ m, and may be 1 ⁇ m to 100 ⁇ m.
  • the thickness of the phosphor layer is 100 nm or more, the ratio of the amount of light absorbed by the phosphor layer out of the amount of light from the light emitting element 15 is increased, and the reduction in light emission efficiency is suppressed. Occurrence of color mixing due to light of the first wavelength mixed with light of each color emitted from the pixel is suppressed.
  • the thickness of the phosphor layer is 1 ⁇ m or more, the effect of suppressing the decrease in light emission efficiency and the occurrence of color mixing is enhanced.
  • the above ratio is saturated when the thickness of the phosphor layer becomes 100 ⁇ m, if the thickness of the phosphor layer 41 is 100 ⁇ m or less, waste of material can be omitted.
  • the light shielding part 47 is continuously provided between the plurality of pixels P1 to P3 so as to cover the outer edge part of each fluorescent part and the outer edge part of the diffusion part 46 as viewed from the thickness direction of the phosphor layer 41.
  • the light shielding part 47 has openings on the central part of each fluorescent part and the central part of the diffusing part 46 as seen from the thickness direction of the phosphor layer 41.
  • the light shielding part 47 is provided so as to cover the side wall of each phosphor part and the side wall of the diffusion part 46 with respect to the thickness direction of the phosphor layer 41.
  • the light shielding portion 47 is formed of a material that absorbs visible light, like a so-called black matrix.
  • each fluorescent part or diffusing part 46 in a direction crossing the thickness direction of the phosphor layer 41 is absorbed by the light shielding part 47 and is prevented from becoming stray light. Thereby, generation
  • the wavelength selection film 48 functions as a band pass filter that transmits light of a predetermined wavelength.
  • the wavelength selection film 48 is formed on the inner side of the opening of the light shielding part 47 on the first fluorescent part 44, on the inner side of the opening of the light shielding part 47 on the second fluorescent part 45, and on the diffusion part 46. It is formed inside the opening of the light shielding part 47.
  • the wavelength selection film 48 on the first fluorescent part 44 and the second fluorescent part 45 has a higher transmittance of light of the first wavelength than that of the fluorescence emitted from the fluorescent part.
  • the wavelength selection film 48 is made of, for example, a thin film such as gold or silver, or a dielectric multilayer film.
  • the wavelength selection film 48 of this embodiment is the same material on each fluorescent part and the diffusion part 46, and is formed of a thin film made of gold.
  • the transmittance of the first wavelength light is higher than the transmittance of the second wavelength light (red light) and the transmittance of the third wavelength light (green light). high.
  • at least a part of the light emitted toward the light emitting element 15 in each fluorescent part is reflected by the wavelength selection film 48 and turned back, and the opposite of the wavelength selection film 48 for each fluorescent part. Taken from the side.
  • the wavelength selection film 48 may have different materials and configurations in the first fluorescent part 44, the second fluorescent part 45, and the diffusing part 46 in accordance with the emission wavelength of each fluorescent part.
  • the wavelength selection film 48 includes an opening of the light shielding part 47 on the first fluorescent part 44, an opening of the light shielding part 47 on the second fluorescent part 45, and an opening of the light shielding part 47 on the diffusion part 46. Therefore, it may not be formed inside one or more openings.
  • Each phosphor part or diffusion part 46 may be in contact with the light absorption part 42 inside the opening of the light shielding part 47.
  • the light emitting part of each pixel (the light emitted from the light emitting element 15 has a divergence angle, and part of the light leaks into the fluorescent part or the diffusing part of the pixel adjacent to the same pixel as the light emitting part.
  • This leaked light can excite the fluorescent part and increase the amount of light emitted from the adjacent pixel by the amount of fluorescent light emission corresponding to the leaked light. It is also possible to increase the amount of light emitted from the adjacent pixel by the amount of the leaked light after entering the diffusing portion, and when the amount of light emitted from each pixel increases beyond a desired value. For example, even when black display is performed with a certain pixel, light is emitted from this pixel, which may be a cause of display defects such as a decrease in contrast ratio and crosstalk.
  • the inventor of the present application has generated fluorescence from the phosphor layer even if the phosphor layer is irradiated with light up to a certain amount of excitation light in the amount of light incident on the phosphor layer. I thought I would n’t. That is, even if a certain amount of light is irradiated onto the phosphor layer, it has been thought that the occurrence of the above-described problems can be suppressed by adopting a configuration in which fluorescence is not generated from the phosphor layer. That is, it is effective to provide a minimum excitation light amount that enables the phosphor layer to emit light. This can be realized by providing a light absorbing portion.
  • the light absorption behavior of the light absorber is originally non-linear. That is, a light absorber is used in which the amount of absorption increases nonlinearly up to a certain amount of incident light, but the amount of light absorption does not change above a certain amount of incident light.
  • a light absorber is used in which the amount of absorption increases nonlinearly up to a certain amount of incident light, but the amount of light absorption does not change above a certain amount of incident light.
  • it is a substance that acts as an absorber for incident light with a low intensity, and functions as a transparent body with its ability as an absorber saturated for incident light with a high intensity.
  • Such an absorber is typically a supersaturated absorbing dye.
  • the light absorbing unit 42 is provided in each of the plurality of pixels P1 to P3, and the light emitting element 15 of another pixel adjacent to this pixel out of the amount of light emitted from each of the plurality of pixels P1 to P3.
  • the amount of light absorption is set so as to reduce the increment due to the light incident from.
  • the amount of light absorption can be set according to the material and film thickness of the light absorbing portion 42. The amount of light absorbed by the light absorbing portion 42 will be described later.
  • the film thickness of the light absorption part 42 may be 1 nm or more and 1 ⁇ m or less, or 10 nm or less.
  • the light absorption part 42 is formed of a material that absorbs light of the first wavelength.
  • the material of the light absorption part that absorbs blue light may be, for example, a material that absorbs light in a wavelength band of 250 nm or more and 500 nm or less, or may be a material that absorbs light in a wavelength band of 350 nm or more and 480 nm or less. In general, materials that absorb light in the ultraviolet to blue wavelength band are used in a wide range of fields.
  • the degree of freedom in selecting the material of the light absorbing portion 42 is high.
  • the material of the light absorbing portion 42 can be appropriately selected from, for example, materials used in the fields of resist materials, insulating materials, sealing materials, photosensitive materials, recording materials, display materials, optical materials, biomaterials, and the like. it can.
  • the material of the light absorbing portion 42 is not particularly limited, and examples thereof include a polymer material containing a ⁇ -conjugated site, typically a benzene ring.
  • the above polymer materials include polyimide, epoxy, silicone, polyester, polyvinyl, polyacryl, polyphenol, polymethacrylate, polystyrene, polyurethane, etc. Examples include polymers having a relatively long system.
  • the material of the light absorption part 42 is not limited to an organic material, and may be an inorganic material such as a metal or a semiconductor.
  • the light absorption part 42 has an inorganic film thickness of several nm to several tens of nm.
  • the material of the inorganic film that may be a film include metals such as Au, Ag, Al, Pt, Cu, Mn, Mg, Ca, Li, Yb, Eu, Sr, Ba, and Na, or among these metals
  • An alloy composed of two or more kinds of metals appropriately selected from Mg, Ag, Li, Al: Ca, Mg: Li, and the like can be given.
  • the light absorbing part 42 may be composed of a light absorbing material provided so as to cover the surface of the phosphor particles.
  • the light absorbing material include organic pigments and inorganic pigments.
  • organic pigments include azo, anthanthrone, anthrapyrimidine, anthraquinone, isoindolinone, isoindoline, indanthrone, quinacridone, quinophthalone, dioxazine, diketopyrrolopyrrole, Examples include thiazine indigo, thioindigo, pyranthrone, phthalocyanine, flavanthrone, perinone, perylene, benzimidazolone, dioxazine purple pigment, and phthalocyanine blue pigment. Further, those similar to a supersaturated absorbing dye such as phthalocyanine and naphthalocyanine are also included.
  • examples of inorganic pigments include carbon black, titanium oxide, yellow lead, cadmium yellow, cadmium red, petal, iron black, zinc white, bitumen, and ultramarine blue. These pigments may be used in combination.
  • the light absorbing material examples include carbon compounds represented by fullerenes, carbon nanotubes, and graphene.
  • Another example of the light absorbing material is a material in which metal particles are dispersed in a polymer.
  • the light absorbing portion 42 formed of this light absorbing material can also suppress the charging of the phosphor substrate 21.
  • dye like a carbon nanotube is also mentioned.
  • a dye molecule or a material in which a dye molecule is dispersed in a binder can be given.
  • the dye molecule include C.I. I. DirectBlue67, Acid Red 266, Benzopurpurin (Benzopurpurin4B), DSCG (INTAL), Methyl orange, Sirius SuprapBrown RLL, AH 6R, A15
  • the binder used for the light absorbing material is not limited as long as it is a polymer that can disperse the dye molecules.
  • the binder include polymer materials such as polyimide, epoxy, siliconone, polyester, polyvinyl, polyacryl, polyphenol, polymethacrylate, polystyrene, and polyurethane. However, it is not limited to these mentioned as an example, What is necessary is just a polymer
  • the light absorbing material is an electrochromic material.
  • the electrochromic material include WO 3 , NiOxHy, Nb 2 O 5 , V 2 O 5 , TiO 2 , MoO 3 , polyaniline, polypyrrole, and Prussian blue.
  • the light absorbing portion can generally be formed at a low cost and with a simple process.
  • a thin-film light-absorbing portion made of metal is provided so as to cover the surface of the fluorescent portion, the emission intensity of the fluorescent portion is affected by the surface plasmon effect, resulting in an improvement in light extraction efficiency. I can expect.
  • FIG. 4 is a diagram for explaining the light absorption amount of the light absorption unit.
  • a symbol Pa in FIG. 4 indicates an arbitrary pixel, and a symbol Pb indicates another pixel adjacent to the pixel Pa.
  • the symbol L is orthogonally projected in the direction perpendicular to the optical axis of the light emitting element 15a from the end of the light emitting surface of the light emitting element 15a of the pixel Pa to the end of the light incident surface of the fluorescent part 41b of the pixel Pb. Show the distance.
  • the optical axis of the light emitting element 15a is defined as being substantially perpendicular to the light emitting surface of the light emitting element 15a.
  • a symbol D in FIG. 4 indicates an interval in a direction along the optical axis of the light emitting element 15a between the light emitting surface of the light emitting element 15a of the pixel Pa and the light incident surface of the fluorescent part 41b of the pixel Pb.
  • the distance D is the total thickness of the sealing portion 22 and the inorganic sealing film 24.
  • the range A1 of the light emission surface of the light emitting element 15a is the organic layer 32 in plan view from the direction parallel to the optical axis of the light emitting element 15a among the surfaces in contact with the second electrode in the organic layer 32. This is a range that overlaps the first electrode 31 at the portion in contact with the first electrode 31.
  • the range A2 of the light incident surface of the fluorescent part 41b of the pixel Pb is a range surrounded by the opening of the light shielding part 47 that covers the peripheral part of the fluorescent part 41b.
  • the material and the film thickness of the light absorption unit 42 of the present embodiment are set so as to absorb the light amount of weak light among the light amounts of light having the first wavelength incident from the light emitting element 15a.
  • the light absorption amount of the light absorption unit 42 is the total light amount of the diffusion component light (leakage light) in the angle range ⁇ that can enter the fluorescent unit 41b of the pixel Pb out of the light emitted from the light emitting element 15a of the pixel Pa.
  • the total amount of leakage light can be obtained from the orientation characteristics of the light emitting element and the angle range ⁇ . That is, the orientation characteristic of the light emitting element is a characteristic indicating the relationship between the angle with respect to the optical axis of the light emitting element and the intensity (light quantity) of the diffusion component at each angle. By obtaining the integral value, the total amount of leaked light can be obtained.
  • FIG. 5 is a graph showing the ratio of the amount of leaked light to the amount of light emitted from each light emitting element in the first embodiment.
  • the value obtained by multiplying the total amount of light emitted from each light emitting element by y with respect to the ratio y obtained from the above equation (1) is: This indicates the total amount of leaked light toward the adjacent pixels (hereinafter referred to as the leaked light amount). Therefore, if the amount of light leaked is set to the amount of absorption until it reaches the phosphor, the amount of light emitted from each pixel is, in principle, the case where the leaked light does not enter the fluorescent part of the adjacent pixel. Be the same.
  • the present inventor has set the light absorption amount A of the light absorbing portion 42 to satisfy the following formula (2) when the maximum value of the light emission amount of the light emitting element is P max. For example, it has been found that the increment due to the leaked light incident from the light emitting elements of other pixels can be effectively reduced in the amount of light emitted from each pixel.
  • the light emitting element 15 of the present embodiment when the pixel value of the darkest gradation is 0, and the pixel value of the brightest gradation is N ⁇ 1 (eg, 255) with respect to an integer N (eg, 256) of 2 or more.
  • the light of the first wavelength can be emitted with the light amount of the gradation of each pixel value from 1 to N ⁇ 1 (for example, 255).
  • P max is the amount of light of the first wavelength emitted from the light emitting element 15 when the pixel value is N ⁇ 1 (for example, 255).
  • the light absorption amount A satisfies the following formula (3) when the light amount of the first wavelength emitted from the light emitting element 15 when the pixel value is 1 is P min . y ⁇ P min ⁇ A (3)
  • the upper limit value shown in Equation (2) is a value that absorbs all leaked light. By doing so, the contrast ratio is improved, but on the other hand, the brightness is reduced.
  • the lower limit value shown in Expression (3) is effective for maintaining brightness.
  • the light absorption amount A may satisfy the following formula (4), The following formula (5) may be satisfied. y ⁇ P min / M ⁇ A (4) y ⁇ P max / M ⁇ A (5)
  • the arrangement of the plurality of pixels may not be an orthogonal grid.
  • the lower limit value shown in Expression (4) is that when the center pixel is one brighter display than the darkest gradation and the surrounding eight pixels are the darkest display, the center pixel is set to the surrounding eight. It is a value that absorbs leaked light toward one of the pixels.
  • the lower limit value shown in (5) indicates that light leaks from the center pixel to one of the surrounding 8 pixels when the center pixel is the brightest display and the surrounding 8 pixels are the darkest display. The value to absorb.
  • the lower limit value shown in Expression (5) is effective in maintaining the contrast ratio while maintaining the brightness.
  • the lower limit value shown in Expression (4) is more effective in maintaining brightness than the lower limit value shown in Expression (5).
  • the light absorption amount A may satisfy the following formula (9). y ⁇ P min / M ⁇ A ⁇ y ⁇ P max / M (9) If the light absorption amount A satisfies the formula (9), there is an effect in maintaining the contrast ratio while maintaining the brightness.
  • the light absorption amount A of the light absorbing portion 42 satisfies the expressions (1) and (2), even if the absorption is linear with respect to the light emission from the phosphor layer, Leakage light emission in the black state is eliminated. Further, it is more effective if the absorption amount itself of the absorber is non-linear. That is, the leakage light is less likely to affect the light emission amount of the phosphor layer 41. Therefore, it is possible to effectively suppress the reduction in contrast ratio and the occurrence of crosstalk due to leaked light, and it is possible to display a high-quality image. In addition, it is possible to suppress a decrease in light use efficiency due to excessive absorption of light of a light amount corresponding to the pixel value by the light absorption unit.
  • the range of the light absorption amount A can be defined using the larger D / L value in the two directions.
  • the above description is the same when the pixel Pa and the pixel Pb are pixels of the same color and when the diffusion unit 46 is arranged instead of the fluorescent unit 41b.
  • Example 1 Next, Example 1 will be described.
  • a phosphor substrate was produced as follows. First, by using a glass substrate having a thickness of 0.7 mm as a sealing substrate, and forming a stripe-shaped first fluorescent part, a second fluorescent part, and a diffusion part having a width of 3 mm on one surface thereof, A phosphor layer was formed. Next, a light absorption part was formed on the phosphor layer.
  • a coating liquid was prepared as a material for the first fluorescent part. Specifically, ethanol (15 g) and ⁇ -glycidoxypropyltriethoxysilane (0.22 g) were added to colloidal silicon dioxide (0.16 g) having an average particle diameter of 5 nm, and the system was opened at room temperature. Stir for 1 hour. This mixture and red phosphor material K 5 Eu 2.5 (WO 4 ) 6.25 (20 g) were transferred to a mortar and thoroughly mixed, then in an oven at 70 ° C. for 2 hours, and further in an oven at 120 ° C. For 2 hours to obtain surface-modified K 5 Eu 2.5 (WO 4 ) 6.25 .
  • the first fluorescent part forming coating solution was prepared by stirring with a machine.
  • the first fluorescent part forming coating solution was applied to a predetermined position on the sealing substrate by a screen printing method with a width of 3 mm.
  • the coating film on the sealing substrate was heated and dried in a vacuum oven (200 ° C., 10 mmHg condition) for 4 hours to form a first fluorescent part.
  • a coating liquid was prepared as a material for the second fluorescent part. Specifically, ethanol (15 g) and ⁇ -glycidoxypropyltriethoxysilane (0.22 g) were added to aerosil (0.16 g) having an average particle diameter of 5 nm, and the mixture was stirred for 1 hour at room temperature in an open system. did.
  • This mixture and the green phosphor material Ba 2 SiO 4 : Eu 2+ (20 g) were transferred to a mortar, thoroughly mixed, and then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours, Surface-modified Ba 2 SiO 4 : Eu 2+ was obtained.
  • a coating solution for forming the second fluorescent part was prepared.
  • the second fluorescent part forming coating solution was applied to a predetermined position on the sealing substrate by a screen printing method with a width of 3 mm. Subsequently, the coating film on the sealing substrate was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, thereby forming a second fluorescent part.
  • a coating liquid was prepared as a material for the diffusion part. Specifically, polyvinyl alcohol dissolved as a diffusing particle in silica particles (20 g) having an average particle diameter of 1.5 ⁇ m and a refractive index of 1.65 in a one-to-one mixed solution (300 g) of water and dimethyl sulfoxide. (30 g) was added and stirred with a disperser to prepare a coating solution for forming a diffusion region. Subsequently, the coating liquid for forming the diffusion portion was applied to a predetermined position on the sealing substrate by a screen printing method with a width of 3 mm. Next, the coating film on the sealing substrate was heat-dried in a vacuum oven (200 ° C., 10 mmHg conditions) for 4 hours, thereby forming a diffusion part not containing a phosphor.
  • a vacuum oven 200 ° C., 10 mmHg conditions
  • a coating liquid was prepared as a material for the light absorption part. Specifically, a container containing water (10 mL) and polyvinyl alcohol (500 mg) is placed on a heater equipped with a temperature controller, and the water is heated to 100 ° C. and stirred to thereby remove polyvinyl alcohol. It was completely dissolved. After putting cyanine dye (0.5 mg) in this polyvinyl alcohol aqueous solution, this aqueous solution was heated to 130 ° C. with the above heater and stirred to completely dissolve the cyanine dye, thereby forming a light absorption part. A coating solution was prepared. The concentration of the cyanine dye in the aqueous solution was 50 mg / L.
  • a coating solution for forming a light absorbing portion was dropped on the surface of the phosphor layer formed on the sealing substrate, and the surface of the phosphor layer was coated with the coating solution by a spinner.
  • the film thickness of this coating film was 10 nm.
  • the light emission panel was created as follows. First, a TFT substrate formed with a glass substrate having a thickness of 0.7 mm as a base substrate was prepared. Next, a first electrode was formed on the TFT substrate. Specifically, a film to be a reflective layer is formed on one surface of the TFT substrate by sputtering so that the film thickness is 100 nm, and indium-tin oxide (ITO) is formed on this film. Was formed by sputtering to form a surface layer film. Next, a laminated film of a film made of silver and a film made of ITO was patterned by using a photolithography method and an etching method to form 90 striped first electrodes having a width of 2 mm.
  • ITO indium-tin oxide
  • an edge cover was formed on the TFT substrate on which the first electrode was formed.
  • SiO 2 was formed to a thickness of 200 nm by sputtering over the plurality of first electrodes and between the plurality of first electrodes.
  • this film was patterned using a photolithography method and an etching method so as to open the central portion of the first electrode and cover the outer edge portion of the first electrode, thereby forming an edge cover.
  • the outer edge of the portion having a width of 10 ⁇ m from the edge of the outer periphery of the first electrode is covered with SiO 2 .
  • the TFT substrate on which the edge cover is formed is washed with water, subjected to 10 minutes of pure water ultrasonic cleaning, 10 minutes of acetone ultrasonic cleaning, and 5 minutes of isopropyl alcohol vapor cleaning, and then at 100 ° C. Dry for 1 hour.
  • the TFT substrate on which the edge cover was formed was fixed to the substrate holder in the chamber of the inline type resistance heating vapor deposition apparatus, and the inside of the chamber was depressurized to a pressure of 1 ⁇ 10 ⁇ 4 Pa or less. Next, each layer constituting the organic layer was formed.
  • a hole injection layer is formed by depositing 1,1 ⁇ bis ⁇ di ⁇ 4-tolylamino ⁇ phenyl ⁇ cyclohexane (TAPC) as a hole injection material to a thickness of 100 nm by resistance heating vapor deposition. did.
  • TAPC 4-tolylamino ⁇ phenyl ⁇ cyclohexane
  • NPD N, N′-di-1-naphthyl-N, N ′ ⁇ diphenyl ⁇ 1,1′-biphenyl 1,1 ′ ⁇ biphenyl ⁇ 4,4 ′ ⁇ diamine (NPD) as a hole transport material
  • a hole transport layer was formed by forming a film with a thickness of 40 nm by resistance heating vapor deposition.
  • an organic light emitting layer having a thickness of 30 nm was formed on the hole transport layer.
  • This organic light-emitting layer is formed by depositing 1,4 ⁇ bis-triphenylsilylbenzene (UGH-2) (host material) at a deposition rate of 1.5 kg / sec and bis [(4,6-difluorophenyl) -Pyridinato-N, C2 '] picolinate Iridium (III) (FIrpic) (blue phosphorescent dopant) was formed by co-evaporation at a deposition rate of 0.2 ⁇ / sec.
  • UH-2 bis-triphenylsilylbenzene
  • FIrpic bis [(4,6-difluorophenyl) -Pyridinato-N, C2 '] picolinate Iridium (III) (FIrpic) (blue phosphorescent dopant) was formed by co-evaporation at a deposition rate of 0.2 ⁇
  • a hole blocking layer having a thickness of 10 nm was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as a material.
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • tris (8-hydroxyquinoline) aluminum (Alq3) was used as a material to form an electron transport layer having a thickness of 30 nm on the hole blocking layer.
  • an electron injection layer having a thickness of 0.5 nm was formed on the electron transport layer using lithium fluoride (LiF) as a material.
  • LiF lithium fluoride
  • a second electrode was formed on the organic layer.
  • the TFT substrate on which the organic layer was formed was fixed in a chamber of a metal vapor deposition apparatus.
  • the shadow mask for forming the second electrode and the TFT substrate were aligned with each other.
  • the shadow mask is provided with an opening so as to form a stripe-shaped second electrode having a width of 2 mm in a direction facing the stripe of the first electrode.
  • magnesium is vapor-deposited at a vapor deposition rate of 0.1 ⁇ / sec and silver is co-deposited at a vapor deposition rate of 0.9 ⁇ / sec by a vacuum vapor deposition method.
  • a magnesium silver alloy film was formed in a predetermined pattern to a thickness of 1 nm.
  • a light emitting element (organic EL element) having a structure in which the organic light emitting layer was sandwiched between the first electrode and the second electrode was formed.
  • This organic EL element exhibits a microcavity effect between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and can increase the front luminance. Therefore, the light emitted from the organic EL element is efficiently propagated to the phosphor layer, and the light emission efficiency is improved.
  • the resonance wavelength and the intensity of the microcavity effect are adjusted so that the emission peak of light emitted from the organic EL element is 460 nm and the half width is 50 nm.
  • SiO 2 with a film thickness of 3 ⁇ m is formed on the display area on the organic EL element and the area (sealing area) extending 2 mm from the outer periphery of the display area by mask vapor deposition using a shadow mask.
  • an inorganic protective layer was formed.
  • a light emitting panel was produced as described above.
  • thermosetting resin was applied to the phosphor substrate.
  • This coating film is a portion that later becomes a sealing portion.
  • the light-emitting panel and the phosphor substrate were aligned with each other using an alignment marker formed outside the display area.
  • the light-emitting panel and the phosphor substrate are brought into close contact with each other through a thermosetting resin coating, and heated at a temperature of 90 ° C. for 2 hours to thermoset the thermosetting resin coating and did.
  • the light emitting panel and the phosphor substrate can be bonded together, and the organic EL element can be hermetically sealed.
  • This bonding step is performed in a dry air environment (moisture content (dew point): ⁇ 80 ° C.) from the viewpoint of preventing deterioration of the organic EL element due to moisture.
  • an IC chip on which a scanning circuit, a video signal driving circuit, a power supply circuit, and the like are formed is mounted on a light emitting panel, and terminals formed on the outer edge of the light emitting panel 20 are connected to a driving LSI (controller).
  • a display device was manufactured. This display device can display an image by connecting to an external power source or the like. When an image was displayed on the display device of Example 1, the contrast ratio was improved by about 5% to 10% as compared with the organic EL display element not provided with the light absorbing portion.
  • the display element 2A according to the first embodiment having the above-described configuration is based on leakage light incident on the fluorescent part of a pixel from a light emitting element of an adjacent pixel, out of the amount of light emitted from each pixel of the plurality of pixels. Since the light absorption amount of the light absorption unit is set so as to reduce the increment, it is possible to suppress the decrease in contrast ratio and the occurrence of crosstalk due to leaked light. In particular, since the light absorption amount of the light absorption part satisfies the above formulas (1) and (2), as illustrated in Example 1, compared with the configuration in which the light absorption part is not provided. The contrast ratio can be effectively improved.
  • FIG. 6 is a cross-sectional view schematically showing the configuration of the display element in the second embodiment.
  • a display element 2B shown in FIG. 6 includes a phosphor substrate 50, a light emitting panel 20 and a sealing portion 22 similar to those in the first embodiment.
  • the phosphor substrate 50 is opposite to the light emitting element 15 with respect to the phosphor layer 41 instead of the light absorbing portion 42 disposed between the light emitting element 15 and the phosphor layer 41 in the first embodiment ( It has a light absorption part 51 arranged on the display side.
  • the wavelength selection film 48 of the present embodiment is continuously provided across the surface of each fluorescent part and between each fluorescent part or diffusion part.
  • the light absorption part 51 of this embodiment is disposed between the sealing substrate 40 and the phosphor layer 41 in contact with the phosphor layer 41.
  • the light absorbing portion 51 emits light emitted from each fluorescent portion by leakage light incident on the fluorescent portion of each pixel from the light emitting element 15 of other pixels, or leaked light incident on the diffusion portion 46 from the light emitting element 15 of other pixels.
  • the amount of light absorption is set so as to absorb light.
  • the light absorption unit 51 includes, for example, a red absorption unit that is disposed in the first pixel P1 and absorbs red light, a green absorption unit that is disposed in the second pixel P2 and absorbs green light, and a third And a blue absorption portion that absorbs blue light and is disposed in the pixel P3.
  • a red absorption unit that is disposed in the first pixel P1 and absorbs red light
  • a green absorption unit that is disposed in the second pixel P2 and absorbs green light
  • a third And a blue absorption portion that absorbs blue light and is disposed in the pixel P3.
  • the light absorption amount of the red absorption portion or the green absorption portion it is assumed that light of the first wavelength having a light amount corresponding to the light absorption amount A satisfying the above formulas (1) and (2) is incident on each fluorescent portion. Sometimes, it is set in consideration of the light emission efficiency of each absorption part so as to absorb the amount of light emitted from each fluorescence part.
  • various functional films such as an optical film and a protective film may be provided between the light absorbing portion 51 and the phosphor layer 41. Further, the light absorbing portion 51 may be disposed on the opposite side (display side) to the phosphor layer 41 with respect to the sealing substrate 40.
  • Example 2 a display element was manufactured in the same manner as in Example 1 except for the arrangement of the light absorbing portion. That is, after forming the light absorption part on the sealing substrate, the phosphor layer was formed on the light absorption part in the same manner as in Example 1.
  • the contrast ratio was improved by about 5% to 10% as compared with the organic EL display element not provided with the light absorbing portion.
  • the display element 2B according to the second embodiment having the above-described configuration can suppress the reduction in contrast ratio and the occurrence of crosstalk due to leakage light, as in the first embodiment. Further, in the display element 2B of the second embodiment, at least a part of the external light incident from the outside of the display element 2B is absorbed by the light absorption part 51, so that the phosphor layer 41 may be excited by the external light. It is possible to suppress a reduction in contrast ratio caused by light emitted from the phosphor layer 41 due to external light.
  • FIG. 7 is a cross-sectional view schematically showing the configuration of the display element in the third embodiment.
  • a display element 2C shown in FIG. 7 includes a phosphor substrate 52, a light emitting panel 20 and a sealing portion 22 similar to those in the first embodiment.
  • the phosphor substrate 52 includes a light absorbing portion 42 (hereinafter referred to as a first light absorbing portion 42) disposed between the light emitting element 15 and the phosphor layer 41 in the first embodiment, and a phosphor substrate 52 in the second embodiment. It has the 2nd light absorption part 51 arrange
  • the amount of the first wavelength light (leakage light) from the second pixel P2 toward the first pixel P1 is Z1, and the first light absorption unit 42 in the first pixel P1 absorbs the first light.
  • Z2 be the amount of light of a wavelength.
  • the amount of leakage light incident on the first fluorescent part 44 of the first pixel P1 is (Z1-Z2).
  • the amount of light absorbed by the second light absorbing unit 51 in the first pixel. Is Z3.
  • the amount of light of the first wavelength necessary for exciting the light of the second wavelength with the light amount of Z3 by the first fluorescent part 44 is Z4.
  • the light absorption amount of the first light absorption unit 42 and the light absorption amount of the second light absorption unit 51 are light amounts corresponding to the sum (Z2 + Z4) of the light amount Z2 and the light amount Z4.
  • (Z2 + Z4) corresponds to the light absorption amount A in the above equation (2)
  • the light absorption amount of the first light absorption unit 42 and the light absorption amount of the second light absorption unit 51 are the above equations (1).
  • Equation (2) Equation (2).
  • Example 3 Next, Example 3 will be described. After forming the light absorption part on the sealing substrate in the same manner as in Example 2, the phosphor layer is formed on the light absorption part in the same manner as in Example 1, and then the second layer is formed on the phosphor layer. The light absorption part was formed. When an image was displayed on the display device of Example 3, the contrast ratio was improved by approximately 8% to 15% as compared with the organic EL display element not provided with the light absorbing portion.
  • the display element 2C according to the third embodiment configured as described above can suppress a decrease in contrast ratio and occurrence of crosstalk due to leakage light.
  • the display element 2C can also suppress a reduction in contrast ratio caused by light emitted from the phosphor layer 41 due to external light, like the display element 2B of the second embodiment.
  • FIG. 8 is a cross-sectional view schematically showing the configuration of the display element in the fourth embodiment.
  • FIG. 9 is an equivalent circuit diagram of one pixel in the fourth embodiment.
  • the display element 2D shown in FIG. 8 includes a backlight 60, a liquid crystal element 61, and a phosphor substrate 62.
  • the liquid crystal element 61 has a plurality of optical switch parts 63.
  • Each optical switch unit 63 is provided in a one-to-one correspondence with each of the plurality of pixels P1 to P3.
  • Each optical switch unit 63 has the circuit configuration shown in FIG. 9 and can adjust the amount of light emitted from each optical switch unit 63 based on the pixel value of the corresponding pixel.
  • the backlight 60 has a plurality of light source parts 64.
  • Each light source unit 64 is a part that supplies light of the first wavelength to each optical switch unit 63 of the liquid crystal element 61 in the backlight 60.
  • the light supplied from the light source unit 64 to the optical switch unit 63 is incident on the phosphor substrate 62 after the amount of light is adjusted by the optical switch unit 63.
  • the light is emitted from the display element 2D through the diffusion portion and used for displaying an image.
  • the light emitting unit of the present embodiment includes one optical switch unit 63 and one light source unit 64.
  • the backlight 60 includes a light source 65 that emits light of a first wavelength, and a light guide unit 66 that guides light emitted from the light source 65 to the liquid crystal element 61.
  • the light source 65 of this embodiment is configured by an LED.
  • the light source 65 may include a laser diode (LD) that emits laser light having a first wavelength instead of an LED, and a diffusing member that diffuses light emitted from the laser diode.
  • LD laser diode
  • the light source 65 and the light guide 66 are provided in a one-to-one correspondence with each of the plurality of pixels P1 to P3. Light emitted from each light source 65 passes through the light guide unit 66 corresponding to the light source 65 and enters each optical switch unit of the liquid crystal element 61.
  • the light guide unit 66 may be provided for each pixel in a one-to-one correspondence with each pixel, and one light source 65 may supply light of the first wavelength to two or more light guide units 66. .
  • two or more light guides 66 may be substantially integrated, and one or two or more light sources 65 may supply light having the first wavelength to the light guides.
  • one light guide part and one light source may be received in common by the plurality of pixels P1 to P3. In this case, the light source part has a first wavelength toward each optical switch part 63. It corresponds to each part that emits light.
  • the liquid crystal element 61 of the present embodiment is a transmissive liquid crystal element that employs an IPS (In-Plane Switch) system.
  • the liquid crystal element 61 includes a first substrate 70, a second substrate 71 disposed to face the first substrate 70, and a liquid crystal layer 72 disposed between the first substrate 70 and the second substrate 71.
  • the first substrate 70 and the second substrate 71 are formed of a material in which a light path corresponding to each pixel has a light-transmitting property.
  • the first substrate 70 and the second substrate 71 are bonded to each other.
  • the liquid crystal layer 72 is made of a liquid crystal material having refractive index anisotropy, and is sealed between the first substrate 70 and the second substrate 71.
  • the first substrate 70 includes a TFT substrate 73, an electrode layer 74 formed on the TFT substrate 73, a first alignment film 75 formed on the electrode layer 74, and a liquid crystal layer 72 with respect to the TFT substrate 73.
  • the second substrate 71 is provided on the base substrate 77, the second alignment film 78 formed on the base substrate 77, and the side opposite to the second alignment film 78 (light emission side) with respect to the base substrate 77.
  • a second polarizing plate 79 is provided. The first substrate 70 and the second substrate 71 are arranged so that the first alignment film 75 and the second alignment film 78 face each other with the liquid crystal layer 72 interposed therebetween.
  • the first alignment film 75 and the second alignment film 78 control the alignment of the liquid crystal layer 72.
  • Each of the first polarizing plate 76 and the second polarizing plate 79 has a characteristic of transmitting linearly polarized light parallel to the transmission axis, and is arranged so that the transmission axes are orthogonal to each other.
  • the TFT substrate 73 has the circuit configuration shown in FIG. 9 for each pixel.
  • the drain region of the first switching element 12 is electrically connected to the pixel electrode 81.
  • the storage capacitor 13 is connected in parallel to the liquid crystal capacitor.
  • One electrode of the storage capacitor 13 is electrically connected to the drain region of the first switching element 12.
  • the other electrode of the storage capacitor 13 is held at the same potential as the common electrode 82 via a capacitor line (not shown).
  • the electrode layer 74 includes a pixel electrode 81 (see FIG. 9) provided in a one-to-one correspondence with each pixel of the plurality of pixels P1 to P3, and a common electrode held at a common potential in the plurality of pixels P1 to P3. 82 and an insulating layer (not shown) provided so that the pixel electrode 81 and the common electrode 82 are not short-circuited.
  • a drive signal of each pixel is supplied from the signal line 11 with the first switching element 12 turned on, the pixel electrode 81 is charged by this drive signal (voltage waveform), and the pixel electrode 81, the common electrode 82, A transverse electric field is generated between the two. Then, the azimuth angle of the liquid crystal molecules in the liquid crystal layer 72 changes due to the lateral electric field, and the birefringence of the liquid crystal layer 72 changes.
  • linearly polarized light that has passed through the first polarizing plate 76 is incident on the liquid crystal layer 72.
  • the polarization state of this linearly polarized light changes depending on whether or not a lateral electric field is applied when passing through the liquid crystal layer 72.
  • the light passing through the liquid crystal layer 72 enters the second polarizing plate 79 and is absorbed by the second polarizing plate 79 according to the polarization state.
  • the liquid crystal element 61 can adjust the amount of light emitted from each optical switch unit 63 for each pixel.
  • an optical switch using a liquid crystal or a digital mirror device does not have a complete function of blocking light, and leakage light may be emitted even if the pixel value is minimum (dark).
  • the extinction ratio of the liquid crystal element 61 is such that when the pixel value is maximum (bright) with respect to the amount of light emitted from the optical switch unit 63 when the pixel value is minimum (dark), the optical switch unit 63 is a ratio of the amount of light emitted from 63.
  • the extinction ratio is 1000 when the amount of light emitted from the optical switch unit 63 when the pixel value is maximum is 1000 times the amount of light emitted from the optical switch unit 63 when the pixel value is minimum.
  • the extinction ratio may be further reduced.
  • each fluorescent part When the leakage light in the black state enters the phosphor layer 41, each fluorescent part is excited to emit light, or the leakage light passes through the diffusion part 46, so that the amount of light emitted from each pixel is increased. It can increase beyond the amount depending on the pixel value. That is, the leakage light generated in the optical switch unit 63 of the light emitting unit can be a cause of display defects such as a decrease in contrast ratio and crosstalk.
  • the inventor of the present application has a configuration in which light is not emitted from the phosphor layer when the intensity of light is low even when excitation light is incident on the phosphor layer. I came up with the idea that it was possible to control the occurrence. And this inventor can implement
  • the phosphor substrate 62 of the present embodiment has the same configuration as that of the phosphor substrate 52 of the third embodiment, but the light absorption amount of the light absorbing unit 83 disposed between the liquid crystal element 61 and the phosphor layer 41. Is different from the first embodiment.
  • the light absorption amount A of the light absorption unit 83 is expressed by the following equation (6), where CR is the extinction ratio of the optical switch unit 63 and P max is the maximum amount of light emitted from the light source unit 64. Fulfill.
  • the light emitting unit (the optical switch unit 63 and the light source unit 64) of the present embodiment sets the pixel value of the darkest gradation to 0, and the pixel value of the brightest gradation with respect to an integer N of 2 or more (for example, 256).
  • N for example, 2 or more
  • ⁇ 1 for example, 255
  • light having the first wavelength can be emitted with a light amount of gradation of each pixel value from 1 to N ⁇ 1 (for example, 255).
  • the P max is the light amount of the first wavelength emitted from the light source unit 64 through the optical switch unit 63 when the pixel value is N ⁇ 1 (for example, 255).
  • the light absorption amount A is expressed as follows when the light amount of the first wavelength emitted from the light source unit 64 through the optical switch unit 63 when the pixel value is 1 is P min .
  • Formula (7) is satisfy
  • the upper limit shown in Equation (6) is a value that absorbs all of the leaked light. By doing so, the contrast ratio is improved, but on the other hand, the brightness is reduced.
  • the lower limit value shown in Equation (7) is effective for maintaining brightness.
  • a threshold value can be given to the amount of light emitted from the phosphor layer 41, and the leakage light affects the light emission amount of the phosphor layer 41. It becomes difficult to exert. This is due to the non-linearity of human visibility in the case of a linear absorption material and to the non-linearity of the material absorption in the case of a non-linear absorption material. Therefore, it is possible to effectively suppress the reduction in contrast ratio and the occurrence of crosstalk due to leaked light, and it is possible to display a high-quality image.
  • Example 4 Next, Example 4 will be described.
  • a liquid crystal element was produced as follows. First, an unpolished glass substrate is prepared as a base substrate of the TFT substrate, and after forming a scanning electrode (scanning line and gate electrode of the first switching element) made of Al on the unpolished glass substrate, a surface layer of the scanning electrode is formed. Anodization was performed to obtain an alumina layer. Next, a gate insulating film made of SiN was formed so as to cover the scanning electrode, and an a-Si film was formed on the gate insulating film in a portion overlapping with the gate electrode of the first switching element.
  • a scanning electrode scanning line and gate electrode of the first switching element
  • an n-type a-Si film, a pixel electrode, and a signal electrode were formed on the a-Si film. Further, a common electrode is provided in the same layer as the pixel electrode and the signal electrode. The pixel electrode and the signal electrode were each formed in a stripe shape parallel to the common electrode and intersecting the scanning line.
  • all the various wirings and various electrodes are made of aluminum.
  • the material of various wirings and various electrodes is not particularly limited as long as it is a metallic material having a low electric resistance, and may be chromium, copper, or the like.
  • the test liquid crystal element had 40 ( ⁇ 3) ⁇ 30 pixels.
  • the pixel pitch was 80 ⁇ m (between common electrodes) on one side in the pixel arrangement direction, and 240 ⁇ m (between gate electrodes) on the other side.
  • the width of the common electrode was 12 ⁇ m, which was narrower than 68 ⁇ m of the gap between the adjacent common electrodes to ensure a high aperture ratio.
  • the polarizing plate having the polarization axis orthogonal to the polarizing plate provided on the TFT substrate was provided.
  • the major axis directions of the liquid crystal molecules in the vicinity of the upper and lower interfaces were substantially parallel to each other, and the angle formed with the direction of the applied electric field was 15 degrees.
  • the cell gap was 3.8 ⁇ m in the liquid crystal sealed state.
  • the panel is sandwiched between two polarizing plates (G1220DU manufactured by Nitto Denko Corporation), and the polarizing transmission axis of one polarizing plate is substantially parallel to the rubbing direction (the liquid crystal molecule major axis direction in the vicinity of the interface), and the other is orthogonal to it. did. Thereby, normally closed characteristics were obtained.
  • liquid crystal having positive dielectric anisotropy composed mainly of a compound having three fluoro groups at its ends was sealed.
  • a backlight was attached to the liquid crystal element, and an IC chip on which a scanning circuit, a video signal driving circuit, a power supply circuit, and the like were formed was mounted on the liquid crystal element.
  • a liquid crystal element and a phosphor substrate manufactured by the same method as in Example 1 were bonded to each other by a sealing portion, and the liquid crystal element was connected to a driving LSI (controller) to produce a display device.
  • This display device can display an image by connecting to an external power source or the like.
  • the contrast ratio was improved by about 8% to 10% as compared with a display element not provided with a light absorbing portion.
  • the display element 2D according to the fourth embodiment having the above-described configuration can suppress a decrease in contrast ratio and occurrence of crosstalk due to leakage light generated in the light emitting section. Further, in the display element 2D, since at least a part of the external light incident from the outside of the display element 2D is absorbed by the light absorbing portion 83, the phosphor layer 41 is suppressed from being excited by the external light. Accordingly, it is possible to suppress a decrease in contrast ratio caused by light emitted from the phosphor layer 41.
  • the configuration of the liquid crystal element can be changed as appropriate.
  • the driving method of the liquid crystal layer is not limited to the IPS method, but may be, for example, a VA method or a TN method.
  • the configuration of the first substrate, the configuration of the second substrate, the material of the liquid crystal layer, and the like It changes suitably according to a system etc.
  • Example 5 the light absorption part was formed as follows. First, a coating liquid was prepared as a material for the light absorption part. Specifically, a pigment dispersion (0.5 mL) containing an ⁇ -type copper phthalocyanine pigment (average particle size 30 nm to 50 nm) and a polyester acrylate resin (100 g) are stirred with a dispersion stirrer, and filtered with a filter having a pore size of 1.0 ⁇ m. Filtration gave a color resist (coating solution).
  • a pigment dispersion 0.5 mL
  • an ⁇ -type copper phthalocyanine pigment average particle size 30 nm to 50 nm
  • a polyester acrylate resin 100 g
  • the color resist was applied using a spin coater so that the film thickness after drying was 5 nm, and then preliminarily dried at 60 ° C. for 5 minutes to form a coating film.
  • Other configurations are the same as those in the fourth embodiment.
  • the contrast ratio was improved by about 8% to 10% as compared with the display element without the light absorbing portion.
  • FIG. 10 is a diagram illustrating phosphor particles and a light absorption unit in the fifth embodiment.
  • FIG. 11 is a cross-sectional view schematically showing the configuration of the display element in the fifth embodiment.
  • a display element 2E shown in FIG. 11 includes a phosphor substrate 84, and a backlight 60 and a liquid crystal element 61 similar to those in the fourth embodiment.
  • the phosphor layer 85 of the phosphor substrate 84 includes the first light adjustment unit 86 arranged in the first pixel P1 and the second light adjustment unit 87 arranged in the second pixel P2. And a third light adjusting unit 88 disposed in the third pixel, and a light shielding unit 47 and a wavelength selection film 48 similar to those of the first embodiment.
  • Each of the light adjustment units of the plurality of light adjustment units 86 to 88 has a configuration in which a plurality of light adjustment particles are dispersed in the base material.
  • the first light adjusting particles 89 dispersed in the first light adjusting unit 86 receive the light having the first wavelength (blue) and emit red light.
  • a portion of the light having the first wavelength incident on the first light adjusting unit 86 is absorbed by the light absorbing unit 91 and enters the first phosphor particle 90.
  • the red light emitted from the first phosphor particles 90 is emitted from the phosphor layer 85 through the light absorbing portion 91 and taken out of the display element 2E.
  • the second light adjusting particles 92 dispersed in the second light adjusting unit 87 include a second phosphor particle (fluorescent unit) that emits green light upon receiving light of the first wavelength, and a first wavelength of light. It has a light absorbing portion made of a material that absorbs light and covering the second phosphor particles.
  • the third light adjustment particles 93 dispersed in the third light adjustment portion 88 are made of a diffusion particle that diffuses light of the first wavelength and a material that absorbs light of the first wavelength, and covers the diffusion particles. It has a light absorption part.
  • Example 6 the first light adjusting particles were formed as follows. First, a coating liquid was prepared as a material for the light absorption part. Specifically, a container containing water (10 mL) and polyvinyl alcohol (500 mg) is placed on a heater equipped with a temperature controller, and the water is heated to 100 ° C. and stirred to thereby remove polyvinyl alcohol. It was completely dissolved. After putting cyanine dye (0.5 mg) in this polyvinyl alcohol aqueous solution, this aqueous solution was heated to 130 ° C. with the above heater and stirred to completely dissolve the cyanine dye, thereby forming a light absorption part. A coating solution was prepared.
  • the concentration of the cyanine dye in the aqueous solution was 50 mg / L.
  • the first light control particles are mixed by coating the aqueous solution thus prepared and the first phosphor particles, and coating the surface of the first phosphor particles with a coating liquid while dispersing with ultrasonic waves. Formed.
  • the film thickness of this coating film was 10 nm or less.
  • the second phosphor particles were coated with the above coating liquid to form second light adjusting particles.
  • the third light adjusting particles were formed by coating the diffusion particles with the coating liquid. Subsequently, each light adjustment part was formed using each said light adjustment particle
  • Other configurations are the same as those in the fourth embodiment.
  • the contrast ratio was improved by about 8% to 10% as compared with the display element not provided with the light absorbing portion.
  • the display element 2E according to the fifth embodiment having the above-described configuration can suppress a decrease in contrast ratio and occurrence of crosstalk due to leakage light generated in the light emitting unit. Further, in the display element 2E, since at least a part of the external light incident from the outside of the display element 2E is absorbed by the light absorbing portion, the phosphor particles are suppressed from being excited by the external light, and the fluorescent light is emitted by the external light. It is possible to suppress a decrease in contrast ratio due to light emitted from the body layer 85.
  • a light absorption unit that absorbs light of the first wavelength (for example, blue light) is provided, but light of the second wavelength is received (for example, red light).
  • a light absorbing portion that covers the first phosphor particles (fluorescent portion) that emit light) and absorbs light of the second wavelength may be provided.
  • covers a fluorescent substance particle may be comprised by the laminated film of two or more layers.
  • the film-shaped light absorbing portion is provided by covering the photophosphor particles to absorb the light having the second wavelength, and by covering the second film with the second film. You may have the 1st film which absorbs the light of the 1st wavelength.
  • FIG. 12 is a cross-sectional view schematically showing the configuration of the display element in the sixth embodiment.
  • the phosphor substrate 94 of the display element 2F illustrated in FIG. 12 includes a microlens (light absorption unit) 95 provided in each of the plurality of pixels P1 to P3.
  • Each microlens 95 condenses light emitted from the fluorescent part or the diffusing part of the pixel provided with the microlens 95.
  • the light absorption amount of each microlens 95 is the light absorption amount of the light emitted from each fluorescent portion when it is assumed that the light having the first wavelength having the light absorption amount satisfying the above formula (5) is incident on each fluorescent portion.
  • the light emission efficiency of each absorber is taken into account.
  • the contrast ratio was improved by about 8% to 10% compared to a display element not provided with a light absorbing portion. did.
  • the display element 2F according to the sixth embodiment having the above-described configuration can suppress a decrease in contrast ratio and occurrence of crosstalk due to leakage light generated in the light emitting section. Further, in the display element 2F, since at least a part of the external light incident from the outside of the display element 2F is absorbed by the light absorbing portion, the phosphor particles are suppressed from being excited by the external light, and are fluorescent by the external light. It is possible to suppress a decrease in contrast ratio due to light emitted from the body layer 85. In addition, since the light emitted from each fluorescent part or the diffusing part is condensed by the microlens 95, the occurrence of color mixing between pixels can be suppressed. The viewing angle can be widened by providing an optical sheet having a fine protrusion structure on the opposite side (display side) of the microlens 95 to the phosphor layer 85.
  • the first wavelength light is set to blue light, but may be ultraviolet light (wavelength is less than 380 nm), or may include ultraviolet light and blue light.
  • the first wavelength light may include at least one of purple light and green light in addition to ultraviolet light and blue light.
  • the material of each fluorescent part can be appropriately changed according to the first wavelength, the wavelength of light to be emitted from each pixel, and the like.
  • the wavelength of the light to be emitted from the third pixel P3 is different from the first wavelength, the light of the first wavelength is converted into the light of the wavelength corresponding to the third pixel P3 instead of the diffusion unit 46 described above.
  • a third fluorescent part may be provided.
  • the optical switch unit is configured by a part of a liquid crystal element, but may be configured by a part of a digital mirror device.
  • the digital mirror device has a structure in which a micromirror is disposed in each of a plurality of pixels, and the traveling direction of light reflected by the micromirror can be switched by changing the posture of each micromirror.
  • Such a micromirror device can utilize each micromirror as an optical switch unit.
  • the display element of each of the above embodiments may be provided with a position where light emitted from each fluorescent part or diffusion part is incident, and may include a color filter provided to increase the color purity of this light.
  • the color filter is, for example, a red color filter that is disposed in the first pixel P1 and absorbs light other than red, a green color filter that is disposed in the second pixel P2 and absorbs light other than green, and A blue color filter is disposed in the third pixel P3 and absorbs light other than blue.
  • the component corresponding to the excitation light (for example, blue light) of the fluorescent part among the external light incident on the fluorescent part emitting red light is absorbed by the red color filter.
  • at least part of the light corresponding to the excitation light of the fluorescent part of the external light is absorbed by the green color filter in the fluorescent part emitting green light. Therefore, it is possible to reduce or prevent light emission of the fluorescent part due to external light, and it is possible to reduce or prevent a decrease in contrast ratio due to external light.
  • the display element of each of the above embodiments may include a polarizing element provided on the display side with respect to the phosphor layer 41.
  • This polarizing element has a polarizing plate that transmits linearly polarized light parallel to the transmission axis, and a ⁇ / 4 plate that converts light transmitted through the polarizing plate into circularly polarized light.
  • Part of the external light incident on the display element from the display side passes through the polarizing element and becomes circularly polarized light, and at least a part of the external light is reflected on the interface inside the display element, for example, the surface of the phosphor layer.
  • Circularly polarized light reflected on the surface of the phosphor layer passes through the ⁇ / 4 plate and is converted into linearly polarized light perpendicular to the transmission axis of the polarizing plate and absorbed by the polarizing plate. Can be suppressed.
  • Electrodes 13A to 13D are diagrams each showing an electronic device.
  • the display 13A includes a housing 101, a support base 102, a display unit 103, a speaker unit 104, and a video input terminal 105.
  • the display unit 103 includes the display element of the above embodiment.
  • the display 13B includes a main body 111, a housing 112, a display unit 113, a keyboard 114, an external connection port 115, and a pointing device 116.
  • the display unit 113 includes the display element of the above embodiment.
  • the 13C includes a main body 121, a housing 122, a display unit 123, a voice input unit 124, a voice output unit 125, operation keys 126, an external connection port 127, and an antenna 128.
  • the display unit 123 includes the display element of the above embodiment.
  • a video camera 130 shown in FIG. 13D includes a main body 131, a housing 132, a display unit 133, an external connection port 134, a remote control receiving unit 135, an image receiving unit 136, a battery 137, an audio input unit 138, operation keys 139, and an eyepiece unit. 140.
  • the display unit 133 includes the display element of the above embodiment.
  • each display unit is configured to include the display element of the above-described embodiment, so that a reduction in contrast ratio and occurrence of crosstalk can be suppressed. A quality image can be displayed.
  • DESCRIPTION OF SYMBOLS 1 ... Display apparatus (electronic device), 2A to 2F ... Display element, 15 ... Light emitting element, 30 ... 1st electrode, 31 ... 2nd electrode, 32 ... Organic layer, 33 ... Organic light emitting layer, 42 ... Light absorption part, 44 ... Fluorescence part, 51 ... Second light absorption part, 63 ... Optical switch part, 64 ... Light source part, 90 ... Phosphor particles (fluorescent part), 91 ... light absorption part, 95 ... microlens (light absorption part), 100 ... thin display device (electronic device), 110 ... notebook personal computer (Electronic device), 120 ... mobile phone (electronic device), 130 ... video camera (electronic device), P ... pixel set, P1 ... first pixel, P2 ... second Pixel

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Abstract

La présente invention concerne un élément d'affichage qui comprend une pluralité de groupes de pixels, une unité d'émission de lumière, une unité fluorescente et une unité d'absorption de lumière. La pluralité de groupes de pixels est disposée suivant deux dimensions et comprend une pluralité de pixels qui comprennent au moins un premier pixel et un second pixel proche du premier pixel, et qui émettent des longueurs d'onde de lumière mutuellement différentes. L'unité d'émission de lumière possède une pluralité d'éléments qui sont disposés dans une correspondance un à un avec chacun de la pluralité de pixels, et qui émettent une première longueur d'onde de lumière ayant un volume de lumière correspondant aux valeurs de pixel des pixels correspondants. L'unité fluorescente est prévue pour le premier pixel et convertit en une seconde longueur d'onde de lumière la première longueur d'onde de lumière entrant en provenance de l'unité d'émission de lumière. Une quantité d'absorption de lumière est définie pour l'unité d'absorption de lumière de telle sorte que des augmentations du volume de lumière émise par l'unité fluorescente sont réduites, une telle augmentation de la lumière émise étant provoquée par au moins l'une de la lumière qui a fuit incidente sur l'unité fluorescente qui provient de l'élément disposé sur le premier pixel et associé au second pixel, ou de la lumière qui a fuit incidente sur l'unité fluorescente qui a été émise par l'élément correspondant au premier pixel en excès du volume de lumière conformément à la valeur de pixel correspondant au premier pixel.
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Cited By (10)

* Cited by examiner, † Cited by third party
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JP2016126352A (ja) * 2015-01-05 2016-07-11 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 液晶表示装置
KR20160140377A (ko) * 2015-05-29 2016-12-07 팔로 알토 리서치 센터 인코포레이티드 박막 광결합기들을 이용하여 형성된 능동 매트릭스 백플레인
TWI587278B (zh) * 2016-10-12 2017-06-11 友達光電股份有限公司 光學裝置及應用該光學裝置之顯示器
WO2019031102A1 (fr) * 2017-08-07 2019-02-14 パナソニックＩｐマネジメント株式会社 Élément de conversion de longueur d'onde, dispositif d'émission de lumière et dispositif d'éclairage
FR3075404A1 (fr) * 2017-12-20 2019-06-21 Valeo Comfort And Driving Assistance Dispositif de generation d'images et afficheur tete haute associe
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US11018118B2 (en) * 2018-09-30 2021-05-25 Wuhan China Star Optoelectronics Technology Co., Ltd. Backlight device and manufacturing method thereof
JP2022107676A (ja) * 2016-02-04 2022-07-22 晶元光電股▲ふん▼有限公司 発光素子及びその製造方法
WO2023206349A1 (fr) * 2022-04-29 2023-11-02 京东方科技集团股份有限公司 Panneau d'affichage et son procédé de préparation, et dispositif d'affichage
US11844235B2 (en) * 2016-02-23 2023-12-12 Samsung Display Co., Ltd. Organic light emitting display device comprising a reflective member having first opening formed in display area and second opening formed in peripheral area

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106067A (ja) * 1993-10-01 1995-04-21 Fuji Electric Co Ltd 薄膜エレクトロルミネセンス素子およびその製造方法
JPH08222369A (ja) * 1995-02-14 1996-08-30 Idemitsu Kosan Co Ltd 多色発光装置
JP2004288456A (ja) * 2003-03-20 2004-10-14 Denso Corp 有機ｅｌパネル
WO2006100957A1 (fr) * 2005-03-22 2006-09-28 Idemitsu Kosan Co., Ltd. Substrat de converion de couleurs, son procédé de fabrication et dispositif d’émission de lumière
JP2009205928A (ja) * 2008-02-27 2009-09-10 Fuji Electric Holdings Co Ltd 微小共振器色変換ｅｌ素子およびそれを用いた有機ｅｌディスプレイ
JP2010122520A (ja) * 2008-11-20 2010-06-03 Sony Corp 反射板、表示装置およびその製造方法
WO2011129135A1 (fr) * 2010-04-14 2011-10-20 シャープ株式会社 Substrat fluorescent et son procédé de production, et dispositif d'affichage
WO2012063864A1 (fr) * 2010-11-10 2012-05-18 シャープ株式会社 Élément électroluminescent et dispositif d'affichage

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106067A (ja) * 1993-10-01 1995-04-21 Fuji Electric Co Ltd 薄膜エレクトロルミネセンス素子およびその製造方法
JPH08222369A (ja) * 1995-02-14 1996-08-30 Idemitsu Kosan Co Ltd 多色発光装置
JP2004288456A (ja) * 2003-03-20 2004-10-14 Denso Corp 有機ｅｌパネル
WO2006100957A1 (fr) * 2005-03-22 2006-09-28 Idemitsu Kosan Co., Ltd. Substrat de converion de couleurs, son procédé de fabrication et dispositif d’émission de lumière
JP2009205928A (ja) * 2008-02-27 2009-09-10 Fuji Electric Holdings Co Ltd 微小共振器色変換ｅｌ素子およびそれを用いた有機ｅｌディスプレイ
JP2010122520A (ja) * 2008-11-20 2010-06-03 Sony Corp 反射板、表示装置およびその製造方法
WO2011129135A1 (fr) * 2010-04-14 2011-10-20 シャープ株式会社 Substrat fluorescent et son procédé de production, et dispositif d'affichage
WO2012063864A1 (fr) * 2010-11-10 2012-05-18 シャープ株式会社 Élément électroluminescent et dispositif d'affichage

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KR102441106B1 (ko) * 2015-05-29 2022-09-07 팔로 알토 리서치 센터 인코포레이티드 박막 광결합기들을 이용하여 형성된 능동 매트릭스 백플레인
JP2022107676A (ja) * 2016-02-04 2022-07-22 晶元光電股▲ふん▼有限公司 発光素子及びその製造方法
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US11844235B2 (en) * 2016-02-23 2023-12-12 Samsung Display Co., Ltd. Organic light emitting display device comprising a reflective member having first opening formed in display area and second opening formed in peripheral area
TWI587278B (zh) * 2016-10-12 2017-06-11 友達光電股份有限公司 光學裝置及應用該光學裝置之顯示器
WO2019031102A1 (fr) * 2017-08-07 2019-02-14 パナソニックＩｐマネジメント株式会社 Élément de conversion de longueur d'onde, dispositif d'émission de lumière et dispositif d'éclairage
FR3075404A1 (fr) * 2017-12-20 2019-06-21 Valeo Comfort And Driving Assistance Dispositif de generation d'images et afficheur tete haute associe
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