WO2012108384A1 - Substrat fluorescent et dispositif d'affichage et dispositif d'éclairage l'utilisant - Google Patents

Substrat fluorescent et dispositif d'affichage et dispositif d'éclairage l'utilisant Download PDF

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WO2012108384A1
WO2012108384A1 PCT/JP2012/052615 JP2012052615W WO2012108384A1 WO 2012108384 A1 WO2012108384 A1 WO 2012108384A1 JP 2012052615 W JP2012052615 W JP 2012052615W WO 2012108384 A1 WO2012108384 A1 WO 2012108384A1
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Prior art keywords
light
layer
substrate
phosphor
blue
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PCT/JP2012/052615
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English (en)
Japanese (ja)
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別所　久徳
悦昌 藤田
勇毅 小林
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シャープ株式会社
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a phosphor substrate, a display device using the phosphor substrate, and an illumination device.
  • This application claims priority on February 10, 2011 based on Japanese Patent Application No. 2011-027215 for which it applied to Japan, and uses the content here.
  • Flat panel displays include non-self-luminous liquid crystal display (LCD), self-luminous plasma display (PDP), inorganic electroluminescence (inorganic EL) display, organic electroluminescence (hereinafter referred to as “organic EL” or “ A display or the like is also known.
  • organic EL organic electroluminescence
  • the organic EL display has attracted particular attention because it can emit light by itself.
  • a technique for displaying a moving picture by simple matrix driving or a technique for displaying a moving picture by active matrix driving using a thin film transistor (hereinafter abbreviated as TFT) is known.
  • TFT thin film transistor
  • a conventional organic EL display pixels emitting red light, green light, and blue light are juxtaposed as one unit, and various colors including white are generated to perform full color display.
  • the base material of the mask is composed of a very thin metal (general film thickness: 50 nm to 100 nm), it is difficult to increase the size of the mask.
  • a very thin metal generally film thickness: 50 nm to 100 nm
  • different light emitting layer materials are mixed and the pixels are mixed.
  • color mixing In order to prevent these phenomena, it is necessary to increase the width of the insulating layer provided between the pixels. However, when the area of the pixels is determined, the area of the light emitting portion is reduced.
  • the deposition source is disposed below the substrate, and the organic material is deposited from below to above to form an organic layer. Deflection of the mask occurs. This bending of the mask also causes the above color mixture. In an extreme case, a portion where the organic layer is not formed is formed, and leakage of the upper and lower electrodes occurs. In the conventional method, the mask becomes unusable due to deterioration of the mask after a predetermined number of times of use. Therefore, an increase in the size of the mask leads to an increase in the manufacturing cost of the display.
  • an organic EL material part that emits light in the blue to blue-green region an organic EL material part that emits light in the ultraviolet region, and red light using blue to blue-green light from the organic EL material part as excitation light.
  • EL elements have been proposed (see Patent Document 1 below). This EL element can be easily manufactured as compared with the organic EL element of the above-described separate coating method, and is excellent in terms of cost.
  • an organic EL element that includes an EL light emitting element portion and a fluorescent layer and has a reflective film provided on the side surface of the fluorescent layer to enable efficient extraction of light toward the side surface to the front side has been proposed ( See Patent Document 2 below).
  • Patent Document 3 a color display device has been proposed in which a light source that emits light having an emission peak wavelength of 400 nm to 500 nm, a liquid crystal display element, and a wavelength conversion unit made of a phosphor are combined (Patent Document 3 below, Non-Patent Document 3).
  • Patent Document 3 describes that in this device, light is emitted from the phosphor layers of R, G, and B provided outside the liquid crystal layer, so that a light display efficiency is high and a bright color display device can be realized. Has been.
  • the light emitted from the phosphor layer is isotropic, as in Patent Document 1 and Patent Document 2, so that the light from the phosphor layer is taken out to the outside.
  • the loss of light is large and the luminous efficiency obtained is low.
  • fluorescence emitted from the phosphor layer in the substrate side can be efficiently extracted without being reflected at the interface with the substrate, whereby light extraction efficiency from the phosphor layer is improved.
  • An object of the present invention is to provide a phosphor substrate capable of improving the conversion efficiency and the conversion efficiency.
  • Another object of the present invention is to provide a display device that is excellent in viewing angle characteristics and can reduce power consumption by combining the phosphor substrate with an organic EL element, a liquid crystal element, or the like.
  • Another object of the present invention is to provide a lighting device that is bright and capable of reducing power consumption.
  • the phosphor substrate in one aspect of the present invention includes a substrate, a first phosphor layer configured to generate fluorescence by incident excitation light, and to emit the generated light from a light extraction surface, and the first phosphor layer And a first intermediate layer having a refractive index gradient from the vicinity of the first phosphor layer to the vicinity of the substrate.
  • the first intermediate layer has a refractive index that is different from that of the phosphor layer.
  • the first intermediate layer is formed of one or more microstructures, and a cross-sectional area of the microstructure is directed from the vicinity of the phosphor layer to the vicinity of the substrate. It may have a shape that becomes smaller.
  • the microstructure may have a substantially conical shape, and a vertex angle formed by a vertex portion of the generally conical shape may be 45 ° or less.
  • the phosphor substrate in one embodiment of the present invention may be provided on the outer surface of the substrate, and may be provided with a protective layer having the refractive index gradient in a direction away from the outer surface of the substrate.
  • the protective layer has a refractive index in a direction away from the outer surface of the substrate. You may have the gradient which changes in the range from n3 to n4 in the thickness direction orthogonal to the light extraction surface.
  • the protective layer is formed of one or more microstructures, and the sectional area of the microstructures decreases from the vicinity of the substrate toward the vicinity of the outer layer. You may have a shape.
  • the microstructure may have a substantially conical shape, and a vertex angle formed by a vertex portion of the generally conical shape may be 45 ° or less.
  • a reflective layer may be provided on one or more side surfaces of the phosphor layer.
  • the phosphor substrate according to an aspect of the present invention transmits at least light corresponding to the peak wavelength of the excitation light on the surface on which the excitation light is incident on the first phosphor layer, and emits light from the first phosphor layer.
  • a wavelength selective transmission / reflection layer configured to reflect at least light corresponding to the peak wavelength may be provided.
  • the phosphor substrate according to an aspect of the present invention includes a plurality of second phosphor layers in which the first phosphor layer is divided into a plurality of predetermined regions, and the first intermediate layer includes the plurality of second phosphor layers. It may be formed between the phosphor layer and the substrate.
  • the plurality of second phosphor layers have different refractive indexes
  • the first intermediate layer includes a plurality of second intermediate layers divided into predetermined regions.
  • the plurality of second intermediate layers are provided between the plurality of second phosphor layers and the substrate, respectively, and the plurality of second intermediate layers have different refractive index gradients. Also good.
  • a display device includes the phosphor substrate according to one aspect of the present invention, and a light source including a first light emitting element that emits excitation light that irradiates the first phosphor layer. Yes.
  • the display device further includes a plurality of pixels including at least a red pixel that performs display using red light, a green pixel that performs display using green light, and a blue pixel that performs display using blue light.
  • ultraviolet light as the excitation light is emitted from the light source, and a red phosphor layer that emits red light with the ultraviolet light as the excitation light is provided on the red pixel as the second phosphor layer,
  • the green pixel may be provided with a green phosphor layer that emits green light using the ultraviolet light as the excitation light
  • the blue pixel may be provided with a blue phosphor layer that emits blue light using the ultraviolet light as the excitation light.
  • the display device may further include a plurality of pixels including at least a red pixel that performs display using red light, a green pixel that performs display using green light, and a blue pixel that performs display using blue light.
  • a scattering layer that is provided in a blue pixel and scatters the blue light, and the blue light as the excitation light is emitted from the light source, and the blue light is emitted to the red pixel as the second phosphor layer.
  • a red phosphor layer that emits red light as the excitation light may be provided.
  • the light source includes a plurality of second light emitting elements provided corresponding to each of at least the red pixel, the green pixel, and the blue pixel, and the plurality of second light sources.
  • An active matrix drive type light source including a plurality of drive elements that respectively drive the light emitting elements may be used.
  • a display device is disposed between any one of the red phosphor layer, the green phosphor layer, and the blue phosphor layer and the substrate on which the plurality of driving elements are formed,
  • Each of the red phosphor layer, the green phosphor layer, and the blue phosphor layer may emit light in a direction opposite to the plurality of driving elements.
  • the light source may include any of a light emitting diode, an organic electroluminescence element, and an inorganic electroluminescence element.
  • the display device further controls a transmittance of light emitted from the light source for each of the red pixel, the green pixel, and the blue pixel between the light source and the phosphor substrate.
  • a liquid crystal element configured to do so may be provided, and the light source may be a planar light source that emits light from a light exit surface.
  • An illumination device includes the phosphor substrate according to one aspect of the present invention and a light source having a light emitting element that emits excitation light that irradiates the phosphor layer.
  • the aspect of the present invention it is possible to realize a fluorescent substrate that can efficiently extract the light emitted from the phosphor layer in the direction of the substrate without reflecting it at the interface between the phosphor layer and the substrate. . Further, it is possible to realize a phosphor substrate that can efficiently extract light incident on the substrate to the outer layer side without reflecting it at the interface between the substrate and the outer layer. Furthermore, it is possible to realize a phosphor substrate capable of improving the light extraction efficiency from the phosphor and improving the conversion efficiency. In addition, by combining the phosphor substrate with an organic EL element, a liquid crystal element, or the like, a display device having excellent viewing angle characteristics, high display quality, and low power consumption can be realized. In addition, a bright lighting device capable of reducing power consumption can be realized.
  • FIG. 4 is a side cross-sectional view for explaining the structure of a microstructure.
  • a schematic view for explaining a manufacturing process of a phosphor substrate (A schematic view for explaining a manufacturing process of a phosphor substrate. (A schematic view for explaining a manufacturing process of a phosphor substrate. (A schematic view for explaining a manufacturing process of a phosphor substrate. (A schematic view for explaining a manufacturing process of a phosphor substrate. (A schematic view for explaining a manufacturing process of a phosphor substrate. (A schematic view for explaining a manufacturing process of a phosphor substrate. It is a schematic cross section which shows the display apparatus of the 1st modification of 1st Embodiment. It is a schematic cross section which shows the whole display apparatus of the 2nd modification of 1st Embodiment.
  • FIG. 1A and 1B are diagrams showing a schematic configuration of a first embodiment of a display device according to the present invention.
  • FIG. 1A is a cross-sectional view showing the entire display device of the present embodiment.
  • FIG. 1B is a cross-sectional view showing the main part of the organic EL element substrate.
  • the scale of the size may be varied depending on the component.
  • reference numeral 1 denotes a display device.
  • the display device 1 includes a phosphor substrate 2 and an organic EL element substrate 4 (light source) bonded to the phosphor substrate 2 via a planarizing film 3. It is configured.
  • one pixel which is the minimum unit that constitutes an image, is configured by three dots that respectively display red, green, and blue.
  • a dot that performs red display is referred to as a red pixel PR
  • a dot that performs green display is referred to as a green pixel PG
  • a dot that performs blue display is referred to as a blue pixel PB.
  • ultraviolet light is emitted from the organic EL element substrate 4 as a light source, and the ultraviolet light is incident on the phosphor substrate 2 as excitation light.
  • red fluorescence is generated in the red pixel PR
  • green fluorescence is generated in the green pixel PG
  • blue fluorescence is generated in the blue pixel PB, and full color display is performed by these color lights.
  • the phosphor substrate of this embodiment will be described in detail.
  • the light absorption layer 6 and the phosphor layers 7R, 7G, and 7B are formed on the inner surface side (first surface) of the substrate 5 via the intermediate layer 10.
  • a planarizing film 3 is formed so as to cover the light absorption layer 6 and the phosphor layers 7R, 7G, and 7B.
  • a protective layer 11 is formed on the outer surface side (second surface) of the substrate 5 between the substrate 5 and the outside air side serving as an outer layer thereof. That is, the protective layer 11 is formed on the second surface of the substrate 5.
  • a plurality of phosphor layers 7R, 7G, and 7B are provided for each pixel.
  • the plurality of phosphor layers 7R, 7G, and 7B are made of different phosphor materials so as to emit different colors depending on the pixels. Note that the phosphor materials constituting the plurality of phosphor layers 7R, 7G, and 7B may have different refractive indexes.
  • the light absorption layer 6 is made of a light-absorbing material and is formed corresponding to a region between adjacent pixels. The light absorption layer 6 can improve display contrast.
  • the phosphor layers 7R, 7G, and 7B are planarized by the planarization film 3, it is possible to prevent depletion between the organic EL element 12 and the phosphor layers 7R, 7G, and 7B, which will be described later, In addition, the adhesion between the organic EL element substrate 4 and the phosphor substrate 2 can be enhanced.
  • the phosphor layers 7R, 7G, and 7B are made of, for example, a thin film having a rectangular shape in plan view, and the reflection layer 8 is formed on the side surfaces of all of the phosphor layers 7R, 7G, and 7B.
  • the reflection layer 8 is not formed on all the side surfaces of the phosphor layers 7R, 7G, and 7B, and the reflection effect described later can be obtained even if it is formed on at least one side surface.
  • a wavelength selective transmission / reflection layer 9 is formed on the phosphor layers 7R, 7G, and 7B, that is, on an incident surface (external surface side) on which excitation light from the organic EL element substrate 4 (light source) is incident as described later. Is formed.
  • substrate As the substrate 5 for the phosphor substrate 2 used in the present embodiment, it is necessary to extract light from the phosphor layers 7R, 7G, and 7B to the outside, and thus it is necessary to transmit light in the emission wavelength region of the phosphor. is there. Accordingly, examples of the material of the substrate 5 include an inorganic material substrate made of glass, quartz, and the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, and the like. However, as described above, the present embodiment is not limited to these substrates.
  • a plastic substrate from the viewpoint that it can be bent or bent without causing stress. Further, from the viewpoint of improving gas barrier properties, it is more preferable to use a substrate in which a plastic substrate is coated with an inorganic material. Thereby, it is possible to eliminate the deterioration of the organic EL element due to the permeation of moisture which may occur when the plastic substrate is used as the organic EL substrate.
  • the phosphor layers 7R, 7G, and 7B of the present embodiment absorb the excitation light emitted from the organic EL element 12 that emits ultraviolet light, and emit red light, green light, and blue light, respectively. It consists of a green phosphor layer 7G and a blue phosphor layer 7B. If necessary, a phosphor layer that emits cyan light and yellow light may be added to the pixels. In that case, the color purity of the pixels emitting cyan light and yellow light is outside the triangle connected by the points indicating the color purity of the pixels emitting red light, green light and blue light on the chromaticity diagram. By setting the color reproducibility, it is possible to expand the color reproducibility as compared with a display device using pixels that emit light of three primary colors of red, green, and blue.
  • the phosphor layers 7R, 7G, and 7B may be composed only of the phosphor materials exemplified below.
  • the phosphor layers 7R, 7G, and 7B may optionally contain additives and the like in the phosphor materials exemplified below.
  • the phosphor layers 7R, 7G, and 7B may have a configuration in which these phosphor materials are dispersed in a polymer material (binding resin) or an inorganic material.
  • a known phosphor material can be used as the phosphor material of the present embodiment. This type of phosphor material is classified into an organic phosphor material and an inorganic phosphor material. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • Organic phosphor materials include stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene as fluorescent dyes that convert ultraviolet excitation light into blue light And coumarin dyes: 7-hydroxy-4-methylcoumarin and the like.
  • coumarin dyes 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1 -Gh) Coumarin (coumarin 153), 3- (2'-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2'-benzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), na Phthalimide dyes: basic yellow 51, solvent yellow 11, solvent yellow 116 and the like.
  • cyanine dyes 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran
  • pyridine dyes 1-ethyl-2- [4- (p-dimethylaminophenyl) -1,3-butadienyl] -
  • Y 2 O 2 S Eu 3+ , YAlO 3 : Eu 3+ , Ca 2 Y 2 (SiO 4 ) 6 : Eu 3+ , LiY 9 ( SiO 4 ) 6 O 2 : Eu 3+ , YVO 4 : Eu 3+ , CaS: Eu 3+ , Gd 2 O 3 : Eu 3+ , Gd 2 O 2 S: Eu 3+ , Y (P, V) O 4 : Eu 3+ , Mg 4 GeO 5.5 F: Mn 4+ , Mg 4 GeO 6 : Mn 4+ , K 5 Eu 2.5 (WO 4 ) 6.25 , Na 5 Eu 2.5 (WO 4 ) 6.25 , K 5 Eu 2.5 (MoO 4 ) 6.25 , Na 5 Eu 2.5 (MoO 4 ) 6.25, and the like.
  • the inorganic phosphor may be subjected to surface modification treatment as necessary.
  • the surface modification method include a chemical treatment such as a silane coupling agent, a physical treatment by adding submicron order fine particles, and a combination of these.
  • a chemical treatment such as a silane coupling agent
  • a physical treatment by adding submicron order fine particles such as a silane coupling agent
  • a combination of these such as deterioration due to excitation light and deterioration due to light emission
  • the average particle diameter (d 50 ) is preferably 0.5 ⁇ m to 50 ⁇ m. When the average particle size is 1 ⁇ m or less, the luminous efficiency of the phosphor is rapidly reduced.
  • the phosphor layers 7R, 7G, and 7B are formed by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, or a doctor blade method.
  • a known wet process such as a coating method such as a discharge coating method, a spray coating method, an ink jet method, a relief printing method, an intaglio printing method, a screen printing method, a micro gravure coating method, or the like.
  • It can be formed by a known dry process such as a method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor phase vapor deposition (OVPD) method, or a laser transfer method.
  • EB electron beam
  • MBE molecular beam epitaxy
  • OVPD organic vapor phase vapor deposition
  • the phosphor layers 7R, 7G, and 7B can be patterned by a photolithography method.
  • a photosensitive resin one or more types of photosensitive resin (photo-curable resist material) having a reactive vinyl group such as acrylic resin, methacrylic resin, polyvinyl cinnamate resin, and hard rubber resin.
  • Various types of mixtures can be used.
  • wet processes such as the ink jet method, relief printing method, intaglio printing method, screen printing method, resistance heating vapor deposition method using shadow mask, electron beam (EB) vapor deposition method, molecular beam epitaxy (MBE) method, sputtering It is also possible to directly pattern the phosphor material by a known dry process such as an organic vapor deposition (OVPD) method or a laser transfer method.
  • OVPD organic vapor deposition
  • the film thickness of the phosphor layers 7R, 7G, and 7B is preferably about 100 nm to 100 ⁇ m, and more preferably about 1 ⁇ m to 100 ⁇ m.
  • the film thickness is less than 100 nm, particularly when the organic EL emits blue light as in the modification described later, the light from the organic EL cannot be sufficiently absorbed, so that the light emission efficiency is lowered or the desired color light is obtained. Color purity due to mixing of blue transmitted light may decrease. Therefore, in order to increase absorption of light emitted from the organic EL element 12 and reduce blue transmitted light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 ⁇ m or more. On the other hand, when the film thickness exceeds 100 ⁇ m, the blue light emission from the organic EL element 12 is already sufficiently absorbed, so that the efficiency is not increased, but only the material is consumed, and the material cost is increased.
  • Light absorption layer In the phosphor substrate 2 of this embodiment, it is preferable that a light absorption layer 6 is formed between the phosphor layers 7R, 7G, and 7B. Thereby, contrast can be improved.
  • the light absorption layer 6 can be formed of, for example, a metal material such as chromium or a black resin.
  • the film thickness of the light absorption layer 6 is preferably about 100 nm to 100 ⁇ m, and more preferably about 100 nm to 10 ⁇ m.
  • the thickness of the light absorption layer 6 is thinner than the thickness of the phosphor layers 7R, 7G, and 7B Is preferred.
  • the reflective layer 8 of this embodiment is provided on the side surfaces of the phosphor layers 7R, 7G, 7B other than the light incident side surface and the light emission side surface.
  • the reflection layer 8 has a function of extracting light emitted toward the side surface in the phosphor layers 7R, 7G, and 7B in the front direction (light extraction direction).
  • a reflective metal powder such as Al, Ag, Au, Cr or an alloy thereof, or a structure in which a reflective resin film made of a resin containing these metal particles is formed.
  • the present embodiment is not limited to these layers.
  • the wavelength selective transmission / reflection layer 9 of the present embodiment is provided on the phosphor layers 7R, 7G, 7B. That is, the wavelength selective transmission / reflection layer 9 is on the outer surface side of the incident surface of the phosphor layers 7R, 7G, 7B ( Provided on the organic EL element substrate 4 side).
  • the wavelength selective transmission / reflection layer 9 has a property of transmitting excitation light and reflecting light emitted from the phosphor layers 7R, 7G, and 7B.
  • transmitting the excitation light means transmitting at least the light corresponding to the peak wavelength of the excitation light in the present embodiment.
  • reflecting the light emitted from the phosphor layers 7R, 7G, and 7B means reflecting at least the light corresponding to the respective emission peak wavelengths from the phosphor layers 7R, 7G, and 7B.
  • a wavelength selective transmission / reflection layer include a dielectric multilayer film, a metal thin film glass, an inorganic material substrate made of quartz, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, and the like. Is not limited to these layers.
  • the phosphor layers 7R, 7G, and 7B are planarized by the planarization film 3 as described above. Thereby, it is possible to prevent depletion between the organic EL element 12 and the phosphor layers 7R, 7G, and 7B, and to improve the adhesion between the organic EL element substrate 4 and the phosphor substrate 2.
  • a spin coating method is preferably employed in order to function as a planarizing film.
  • the intermediate layer 10 of the present embodiment is provided between the phosphor layers 7R, 7G, and 7B and the substrate 5 as described above.
  • the intermediate layer 10 has a refractive index gradient between the phosphor layers 7R, 7G, and 7B and the substrate 5 side. That is, in the intermediate layer 10, the refractive index in the vicinity of the phosphor layers 7R, 7G, and 7B is different from the refractive index in the vicinity of the substrate 5, and the intermediate layer 10 extends from the vicinity of the phosphor layers 7R, 7G, and 7B to the vicinity of the substrate 5. It has a refractive index gradient.
  • the refractive index gradient is such that when the refractive index of the phosphor layers 7R, 7G, and 7B is n1, and the refractive index of the substrate 5 is n2, the phosphor layer 7R faces the substrate 5 from the phosphor layers 7R, 7G, and 7B. , 7G, and 7B, it is preferable that the gradient gradually change in a range from n1 to n2 in the thickness direction orthogonal to the light extraction surface (surface on the substrate 5 side).
  • the refractive index of the intermediate layer 10 preferably has a gradient that changes stepwise or continuously.
  • the refractive index n1 of the phosphor layers 7R, 7G, and 7B is, for example, about 2.0 to 2.3.
  • the refractive index n2 of the substrate 5 is about 1.5 in the case of a glass substrate, for example.
  • the refractive index gradient of the intermediate layer 10 is stepwise or continuously from about 2.0 to 2.3 to about 1.5 in the direction from the phosphor layers 7R, 7G, and 7B toward the substrate 5. It is preferable to be small.
  • the intermediate layer 10 has a fluorescent component having a large angle with respect to the normal direction of the light extraction surface of the phosphor layers 7R, 7G, and 7B as in the prior art. The loss of light caused by total reflection at the interface where there is a difference in refractive index from 5 can be minimized.
  • the intermediate layer 10 having such a refractive index gradient can be formed by, for example, (1) laminating a plurality of layers (materials) having different refractive indexes stepwise or continuously. Further, (2) by forming one or more microstructures having a minute inclination in the thickness direction, and continuously changing the proportion of the structure in the thickness direction, the intermediate layer 10 having a refractive index gradient is obtained. Can be formed.
  • a structure in which a TiO 2 layer and a SiO 2 layer are laminated is mentioned.
  • a stacked structure including a combination of an MgO layer and an SiO 2 layer, a ZrO 2 layer and an SiO 2 layer, a PMMA layer and a silicon oil layer, and the like can be given.
  • this embodiment is not limited to the combination of these materials.
  • examples of the material for forming the microstructure include transparent resins such as polyethylene, polypropylene, polycarbonate, and epoxy, and transparent inorganic materials such as SiO 2 and Si 3 N 4 .
  • a compound having a high refractive index for example, a metal oxide such as TiO 2 , Cu 2 O, Fe 2 O 3 or the like to these materials.
  • this embodiment is not limited to these materials.
  • the microstructure is preferably formed so that the cross-sectional area of the microstructure becomes smaller from the phosphor layers 7R, 7G, and 7B toward the substrate 5.
  • the micro structure 10a has a conical shape.
  • the microstructure 10a may have a substantially conical shape.
  • the intermediate layer 10 formed with a large number of such conical microstructures 10a is arranged so that the apex is on the substrate 5 side as shown in FIG. 1A, whereby the refractive index thereof is changed to the phosphor layers 7R and 7G. , 7B and high near the substrate 5.
  • the cross-sectional area of the conical microstructure 10a (the cross-sectional area in a plane parallel to the light extraction surface of the phosphors 7R, 7G, and 7B) is changed from the phosphor layers 7R, 7G, and 7B to the substrate.
  • the refractive index of the intermediate layer 10 also decreases continuously from the vicinity of the phosphor layers 7R, 7G, 7B toward the vicinity of the substrate 5.
  • the apex angle ⁇ formed by the apex portion that is, the apex angle ⁇ of the triangle in the longitudinal section obtained by cutting the cone along the central axis
  • the angle is greater than 0 ° and not greater than 45 °.
  • the apex angle ⁇ is formed to be 45 ° or less in this way, the cross-sectional area of the microstructure 10a is continuously and gradually decreased from the phosphor layers 7R, 7G, and 7B toward the substrate 5, so that the intermediate layer 10 The refractive index of the light source decreases continuously and gradually from the phosphor layers 7R, 7G, and 7B toward the substrate 5.
  • the light transmitted through the intermediate layer 10 has almost no loss due to total reflection or the like due to the refractive index difference in the intermediate layer 10 and is efficiently emitted to the substrate 5 side.
  • the microstructure of the present embodiment is not limited to these conical shapes, and for example, the cross-sectional inclination of the microstructure may be a curve.
  • a material having a refractive index substantially equal to the refractive index of the substrate 5 for example, a colorless and transparent optical oil silicone compound for optical bonding, etc. It is preferable to perform using.
  • the protective layer 11 of this embodiment is provided between the substrate 5 and an external layer (for example, outside air).
  • the refractive index n4 of the outer layer is about 1.0 in the case of an air layer, for example. Therefore, it is preferable that the refractive index gradient of the protective layer 11 is gradually reduced from about 1.5 to about 1.0 from the substrate 5 toward the outer layer in a stepwise or continuous manner.
  • the protective layer 11 is a fluorescent component having a large angle with respect to the normal direction of the light extraction surface of the substrate 5 as in the past, among the fluorescence emitted from the substrate 5 to the outer layer side, that is, in the light extraction direction.
  • the loss of light caused by total reflection at the interface where there is a difference in refractive index between the substrate 5 and the outer layer can be minimized.
  • the protective layer 11 having such a refractive index gradient for example, as in the case of the intermediate layer 10, for example, (1) a plurality of layers (materials) having different refractive indexes are laminated stepwise or continuously. It can be formed by stacking. Further, (2) by forming one or more microstructures having a minute inclination in the thickness direction and continuously changing the proportion of the structure in the thickness direction, the protective layer 11 having a refractive index gradient is obtained. Can be formed.
  • a structure in which a TiO 2 layer and a SiO 2 layer are laminated is mentioned.
  • a stacked structure including a combination of an MgO layer and an SiO 2 layer, a ZrO 2 layer and an SiO 2 layer, a PMMA layer and a silicon oil layer, and the like can be given.
  • this embodiment is not limited to the combination of these materials.
  • examples of the material for forming the microstructure include transparent resins such as polyethylene, polypropylene, polycarbonate, and epoxy, and transparent inorganic materials such as SiO 2 and Si 3 N 4 .
  • a compound having a high refractive index for example, a metal oxide such as TiO 2 , Cu 2 O, Fe 2 O 3 or the like to these materials.
  • this embodiment is not limited to these materials.
  • the cross-sectional area of the microstructure may be formed in a shape that decreases from the vicinity of the substrate 5 to the vicinity of the outer layer.
  • the microstructure 10a shown in FIG. 2A it is preferably made of a cone-shaped microstructure.
  • the microstructure may have a substantially conical shape.
  • the cross-sectional area of the conical microstructure (the cross-sectional area in a plane parallel to the outer surface of the substrate 5) continuously decreases from the substrate 5 toward the outer layer, so that the protective layer 11 Also decreases continuously from the substrate 5 toward the outer layer.
  • the vertex angle ⁇ formed by the apex portion is formed to be larger than 0 ° and not more than 45 °, similarly to the microstructure 10a of the intermediate layer 10. It is preferable.
  • the apex angle ⁇ is formed to be 45 ° or less in this way, the cross-sectional area of the microstructure is continuously and gently reduced from the substrate 5 toward the outer layer, so that the refractive index of the protective layer 11 is also from the substrate 5. Smaller continuously and slowly toward the outer layer. Therefore, the light transmitted through the protective layer 11 is almost free from loss due to total reflection or the like due to the refractive index difference in the protective layer 11, and is efficiently emitted to the outer layer side.
  • the bonding between the protective layer 11 and the substrate 5 is also performed using a material having a refractive index substantially equal to the refractive index of the substrate 5, such as a colorless and transparent silicone oil compound for optical bonding. preferable.
  • FIGS. 3A to 3I schematically showing manufacturing steps.
  • the example described here is a method in which the intermediate layer 10 and the protective layer 11 are each formed of a conical microstructure.
  • an injection molding machine including an aluminum mold 30 having a concave shape of the conical microstructure (for example, apex angle is 30 °) is used.
  • a thin plate-shaped intermediate layer forming material 31 that is used as a precursor of the intermediate layer 10 is formed.
  • FIG. 3B an intermediate layer 10 having a refractive index gradient having a large number of minute conical shapes is formed.
  • the formed intermediate layer 10 is bonded onto the substrate 5 using, for example, a colorless and transparent optical bonding material having a refractive index substantially equal to the refractive index of the formed substrate 5.
  • phosphor layers 7R, 7G, and 7B are formed on the intermediate layer 10 using a dispenser.
  • a reflective layer 8a is formed on the phosphor layers 7R, 7G, and 7B by vacuum deposition.
  • a photoresist layer 32 is formed on the reflective layer 8a by spin coating.
  • the photoresist layer 32 is UV-exposed using a photomask 33, and then developed with a developer to form a resist pattern 34 as shown in FIG. 3G.
  • wet etching is performed using the resist pattern 34 to remove the reflective layer 8a on the opposite side of the phosphor layer 7R, 7G, 7B from the substrate 5 as shown in FIG. 3H. That is, the sales company layer 8a formed near the tops of the phosphor layers 7R, 7G, and 7B is removed. Thereby, the reflective layer 8a is made the reflective layer 8 that covers the side surfaces of the phosphor layers 7R, 7G, and 7B as shown in FIG. 1A.
  • the wavelength selective transmission / reflection layer 9 is formed on the phosphor layers 7R, 7G, 7B and the reflection layer 8 by spin coating.
  • the protective layer 11 produced in the same manner as the intermediate layer 10 is attached to the surface (second surface) opposite to the surface on which the phosphor layers 7R, 7G, and 7B are formed. Thereby, the phosphor substrate 2 is obtained.
  • the organic EL element substrate 4 that functions as a light source in the display device 1 of the present embodiment will be described.
  • the organic EL element substrate 4 of the present embodiment has an anode 13, a hole injection layer 14, a hole transport layer 15, a light emitting layer 16, a hole blocking layer 17, an electron transport on one surface of the substrate 22.
  • a plurality of organic EL elements 12 having a configuration in which a layer 18, an electron injection layer 19, and a cathode 20 are sequentially stacked are provided.
  • the said organic EL element 12 comprises the excitation light source 4 shown to FIG. 1A.
  • An edge cover 21 is formed so as to cover the end face of the anode 13.
  • the organic EL element 12 in the organic EL element substrate 4 of the present embodiment emits ultraviolet light, and the emission peak of ultraviolet light is preferably 360 nm to 410 nm.
  • the organic EL element 12 a known element can be used.
  • the organic EL element 12 only needs to include at least an organic EL layer made of an organic light emitting material between the anode 13 and the cathode 20, and the specific configuration is not limited to the above.
  • layers from the hole injection layer 14 to the electron injection layer 19 may be referred to as an organic EL layer.
  • the plurality of organic EL elements 12 are provided in a matrix corresponding to each of the red pixel PR, the green pixel PG, and the blue pixel PB, and are turned on and off individually.
  • the driving method of the plurality of organic EL elements 12 may be active matrix driving or passive matrix driving. A configuration example using an active matrix organic EL element substrate will be described in detail in a second embodiment later.
  • the substrate 22 substantially the same material as the substrate 5 of the phosphor substrate 2 can be used. That is, as a material of the substrate 22, for example, an inorganic material substrate made of glass, quartz, etc., an insulating substrate such as a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., a ceramic substrate made of alumina, or the like, or aluminum (Al)
  • a metal substrate made of iron (Fe) or the like, or a substrate coated with an insulator made of silicon oxide (SiO 2 ) or an organic insulating material on another substrate, or a metal substrate made of Al or the like is an anode.
  • substrate etc. which performed the insulation process by methods, such as oxidation, are mentioned, This embodiment is not limited to these board
  • a plastic substrate or a metal substrate from the viewpoint that it can be bent or bent without causing stress. Furthermore, a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are more preferable. Accordingly, it is possible to eliminate the deterioration of the organic EL due to the permeation of moisture that may occur when a plastic substrate is used as the organic EL substrate. Further, it is possible to eliminate leakage (short circuit) due to protrusions of the metal substrate that may occur when a metal substrate is used as the organic EL substrate.
  • the film thickness of the organic EL layer is as very thin as about 100 nm to 200 nm, it is known that a leakage current or a short circuit occurs in the pixel portion due to the protrusion. Since the light from the organic EL layer is emitted from the opposite side of the substrate, the substrate 22 may or may not be transparent.
  • an electrode material for forming the anode 13 and the cathode 20 a known electrode material can be used.
  • a metal such as gold (Au), platinum (Pt), nickel (Ni) having a work function of 4.5 eV or more
  • an oxide (IZO) composed of indium (In) and zinc (Zn) are transparent electrodes.
  • a material As a material.
  • metals such as Ba) and aluminum (Al)
  • alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.
  • the anode 13 and the cathode 20 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above-described materials. It is not limited to. Further, if necessary, the formed electrode can be patterned by a photolithography method or a laser peeling method, and a directly patterned electrode can also be formed by combining with a shadow mask.
  • the film thickness of the anode 13 and the cathode 20 is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.
  • the anode 13 (cathode) It is preferable to use a semitransparent electrode as 20).
  • a material used here a metal translucent electrode alone or a combination of a metal translucent electrode and a transparent electrode material can be used.
  • the translucent electrode material silver is preferable from the viewpoints of reflectance and transmittance.
  • the film thickness of the translucent electrode is preferably 5 nm to 30 nm. When the film thickness is less than 5 nm, the light is not sufficiently reflected, and a sufficient interference effect cannot be obtained.
  • an electrode with a high light reflectivity for the electrode opposite to the light extraction side.
  • electrode materials used in this case include reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys, and transparent and reflective metal electrodes (reflective electrodes). A combined electrode or the like can be given.
  • the organic EL layer used in the present embodiment may have a single layer structure of an organic light emitting layer, or a multilayer structure of an organic light emitting layer, a charge transport layer, and a charge injection layer.
  • the present embodiment is not limited to these.
  • each of the light emitting layer, the hole injection layer, the hole transport layer, the hole blocking layer, the electron blocking layer, the electron transport layer, and the electron injection layer may have a single layer structure or a multilayer structure.
  • the organic light emitting layer may be comprised only from the organic light emitting material illustrated below.
  • the organic light emitting layer may be composed of a combination of a light emitting dopant and a host material.
  • the organic light emitting layer may optionally contain a hole transport material, an electron transport material, an additive (donor, acceptor, etc.) and the like.
  • the organic light emitting layer may have a configuration in which these materials are dispersed in a polymer material (binding resin) or an inorganic material. From the viewpoint of luminous efficiency and lifetime, those in which a luminescent dopant is dispersed in a host material are preferable.
  • the organic light emitting material a known light emitting material for organic EL can be used. Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials.
  • the light emitting material may be classified into a fluorescent material, a phosphorescent material, and the like. In that case, it is preferable to use a phosphorescent material with high emission efficiency from the viewpoint of low power consumption.
  • a known dopant material for organic EL can be used as the light-emitting dopant optionally contained in the light-emitting layer.
  • dopant materials include, for example, p-quaterphenyl, 3,5,3,5 tetra-t-butylsecphenyl, 3,5,3,5 tetra-t-butyl-p.
  • -Fluorescent materials such as quinckphenyl.
  • Fluorescent light-emitting materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6′-difluorophenyl) And phosphorescent organometallic complexes such as polydinato) tetrakis (1-pyrazolyl) borate iridium (III) (FIr 6 ).
  • a known host material for organic EL can be used as a host material when using a dopant.
  • host materials include the low-molecular light-emitting materials, polymer light-emitting materials, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene (CPF), 3 , 6-bis (triphenylsilyl) carbazole (mCP), carbazole derivatives such as (PCF), aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3- And fluorene derivatives such as bis (9-phenyl-9H-fluoren-9-yl) benzene (mDPFB) and 1,4-bis (9-phenyl-9H-fluoren-9-yl) benzene (pDPFB).
  • the charge injection and transport layer is used to efficiently inject charges (holes and electrons) from the electrode and transport (injection) to the light-emitting layer with the charge injection layer (hole injection layer and electron injection layer) and the charge. It is classified as a transport layer (hole transport layer, electron transport layer).
  • the charge injecting and transporting layer may be composed only of the charge injecting and transporting material exemplified below.
  • the charge injection / transport layer may optionally contain an additive (donor, acceptor, etc.) and the like in the charge injection / transport material exemplified below.
  • the charge injecting and transporting layer may have a configuration in which these materials are dispersed in a polymer material (binding resin) or an inorganic material.
  • charge injecting and transporting material known charge transporting materials for organic EL and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but this embodiment is not limited to these materials. .
  • hole injection hole transport materials include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis (3- Aromatic third compounds such as methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD)
  • TPD methylphenyl
  • TPD N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine
  • Low molecular weight materials such as quaternary amine compounds, hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythiophene / polystyren
  • the material used for the hole injection layer is the highest occupied molecular orbital (HOMO) than the hole injection transport material used for the hole transport layer. It is preferable to use a material having a low energy level. Further, as the hole transport layer, it is preferable to use a material having a higher hole mobility than the hole injection transport material used for the hole injection layer.
  • HOMO occupied molecular orbital
  • the hole injection / transport material In order to further improve the hole injection and transport properties, it is preferable to dope the hole injection / transport material with an acceptor.
  • an acceptor a known acceptor material for organic EL can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • Acceptor materials include Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF 4 (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc.
  • TNF trinitrofluorenone
  • DNF dinitrofluorenone
  • organic materials such as fluoranyl, chloranil and bromanyl.
  • compounds having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB, DDQ and the like are more preferable because the carrier concentration can be increased more effectively.
  • Examples of electron injection electron transport materials include inorganic materials that are n-type semiconductors, oxadiazole derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, benzodifuran derivatives, etc. And low molecular weight materials; polymer materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS).
  • examples of the electron injection material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • the material used for the electron injection layer has a higher energy level of the lowest unoccupied molecular orbital (LUMO) than the electron injection transport material used for the electron transport layer. It is preferable to use a material.
  • LUMO lowest unoccupied molecular orbital
  • a material used for the electron transport layer it is preferable to use a material having higher electron mobility than the electron injection transport material used for the electron injection layer.
  • a known donor material for organic EL can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, In, anilines, phenylenediamines, benzidines (N, N, N ′, N′-tetraphenyl) Benzidine, N, N'-bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl- Benzidine, etc.), triphenylamines (triphenylamine, 4,4′4 ′′ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N-3- Methylphenyl-N-phenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N- (1-naphthyl) -N
  • organic materials such as condensed polycyclic compounds (wherein the condensed polycyclic compounds may have a substituent), TTF (tetrathiafulvalene) s, dibenzofuran, phenothiazine, and carbazole.
  • TTF tetrathiafulvalene
  • dibenzofuran phenothiazine
  • carbazole a compound having an aromatic tertiary amine as a skeleton, a condensed polycyclic compound, and an alkali metal are particularly preferable because the carrier concentration can be increased more effectively.
  • An organic EL layer including a light emitting layer, a hole transport layer, an electron transport layer, a hole injection layer, an electron injection layer, and the like is prepared using a coating liquid for forming an organic EL layer in which the above materials are dissolved and dispersed in a solvent.
  • coating methods such as spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method, ink jet method, letterpress printing method, intaglio printing method, screen printing method, microgravure coating method, etc.
  • a known dry process such as a wet process, a resistance heating vapor deposition method using the above materials, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor deposition (OVPD) method, or the like It can be formed by a laser transfer method or the like.
  • the coating liquid for organic EL layer formation may contain the additive for adjusting the physical properties of coating liquid, such as a leveling agent and a viscosity modifier.
  • the film thickness of each layer of the organic EL layer is preferably about 1 nm to 1000 nm, more preferably 10 nm to 200 nm. If the film thickness is less than 10 nm, the physical properties (charge injection characteristics, transport characteristics, confinement characteristics, etc.) that are originally required cannot be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, if the film thickness exceeds 200 nm, the drive voltage increases due to the resistance component of the organic EL layer, leading to an increase in power consumption.
  • an edge cover 21 is formed for the purpose of preventing leakage current between the anode 13 and the cathode 20 at the end of the anode 13.
  • the edge cover 21 can be formed by a known method such as an EB vapor deposition method using an insulating material, a sputtering method, an ion plating method, a resistance heating vapor deposition method, or the like, by a known dry method or a wet photolithography method. Patterning can be performed, but the present embodiment is not limited to these forming methods.
  • the material constituting the edge cover 21 can be a known insulating material, and is not particularly limited in the present embodiment, but it is necessary to transmit light.
  • the film thickness of the edge cover 21 is preferably 100 nm to 2000 nm.
  • the thickness is 100 nm or less, the insulating property is not sufficient, and leakage occurs between the anode 13 and the cathode 20, causing an increase in power consumption and non-light emission.
  • the thickness is 2000 nm or more, the film forming process takes time, which causes a decrease in productivity and disconnection of the electrode at the edge cover 21.
  • the organic EL element 12 preferably has a microcavity structure (optical microresonator structure) due to an interference effect between a reflective electrode and a translucent electrode used as the anode 13 and the cathode 20 or a dielectric multilayer film.
  • a microcavity structure optical microresonator structure
  • light escaping to the surroundings can be reduced, and the light emission efficiency at the front can be increased.
  • the emission spectrum can be adjusted due to the interference effect, and the emission spectrum can be adjusted by adjusting to a desired emission peak wavelength and half width. Thereby, the spectrum which can excite the fluorescent substance which light-emits each color light more effectively can be controlled.
  • the present inventors have examined a conventional display device using a phosphor. As a result, the fluorescent light emitted from the phosphor layer in the substrate side, that is, in the light extraction direction, is efficiently extracted without being reflected at the interface with the substrate. As a result of paying close attention to the above and making intensive efforts, we came up with the following composition. That is, according to the phosphor substrate 2 of the present embodiment and the display device 1 using the same, the intermediate layer 10 having a refractive index gradient is provided between the phosphor layers 7R, 7G, and 7B and the substrate 5.
  • the refractive index gradient of the intermediate layer 10 is configured to change gently within the range from n1 to n2 in the thickness direction from the phosphor layers 7R, 7G, 7B toward the substrate 5.
  • the fluorescent component having a large angle with respect to the normal direction of the light extraction surfaces of the phosphor layers 7R, 7G, and 7B as in the prior art is reflected by the refractive index between the phosphor layers 7R, 7G, and 7B and the substrate 5.
  • Light loss caused by total reflection at the interface where there is a difference can be minimized. Therefore, the light extraction efficiency from the phosphor layers 7R, 7G, and 7B can be improved, and the conversion efficiency can be improved.
  • by combining the phosphor substrate 2 with an organic EL element it is possible to provide an excellent display device that is excellent in viewing angle characteristics and capable of reducing power consumption.
  • the component C1 shown by a solid line in FIG. 13A
  • the component C2 indicated by a two-dot chain line in FIG. 13A
  • the component C2 that emits light in the side direction and on the side opposite to the light extraction side (light source side) cannot be extracted outside, resulting in a loss of light emission.
  • the fluorescence component C3 having a large angle with respect to the normal direction is also reflected at the interface between the phosphor layer 7 and the substrate 5 having different refractive indices (FIG. 13A). It is reflected at the interface between the substrate 5 and the outer layer (indicated by a broken line in FIG. 13A). Then, it is impossible to extract these fluorescent components to the outside, resulting in a loss of light emission. Considering these losses, the light emission that can actually be extracted to the light extraction side is about 20% of the total light emission.
  • FIG. 13B As shown in a schematic diagram of another example of the conventional display device in FIG. 13B, when the side surface of the phosphor 7 is covered with a reflective layer 8 such as metal, a component that emits light in the side surface direction (solid line in FIG. 13B). A portion C1 of (shown in FIG. 1) is efficiently guided to the outside by being reflected by the reflective layer 8 and taken out. However, the component C2 that emits light on the side opposite to the light extraction side (light source side) cannot be extracted in the front direction. Similarly to the structure of FIG.
  • the fluorescence component C3 having a large angle with respect to the normal direction includes the phosphor layer 7 and the substrate 5 having different refractive indexes. Or is reflected at the interface between the substrate 5 and the outer layer (shown by a broken line in FIG. 13A), resulting in a loss of light emission. Therefore, in the conventional structure shown in FIGS. 13A and 13B, the loss of light when the light from the phosphor layer 7 is extracted to the outside is large, and the light emission efficiency obtained is low.
  • the phosphor layers 7R, 7G, and 7B are configured by a plurality of types of phosphor layers having different refractive indexes that are divided for each predetermined region on the substrate 5.
  • the intermediate layer 10 is preferably provided between the individual phosphor layers 7R, 7G, and 7B and the substrate 5.
  • the intermediate layer 10 is formed of one or more microstructures, and the cross-sectional area of the microstructures is directed from the phosphor layers toward the substrate. It is preferable to have a smaller shape. Accordingly, it is possible to provide a gentle refractive index gradient between the phosphor layers 7R, 7G, and 7B and the substrate 5. Therefore, light loss caused by total reflection at the interface where the refractive index difference between the phosphor layers 7R, 7G, and 7B and the substrate 5 exists is minimized, and the light extraction efficiency is remarkably increased. Can be improved.
  • the microstructure has a conical shape, and the apex angle formed by the apex portion of the conical shape is formed at 45 ° or less. Accordingly, it is possible to provide a gentle refractive index gradient between the phosphor layers 7R, 7G, and 7B and the substrate 5. Therefore, light loss caused by total reflection at the interface where the refractive index difference between the phosphor layers 7R, 7G, and 7B and the substrate 5 exists is minimized, and the light extraction efficiency is further improved. Can be improved.
  • Layer 11 is provided.
  • the protective layer 11 has a refractive index from the substrate 5 toward the outer layer.
  • the protective layer 11 has a refractive index from the substrate 5 toward the outer layer.
  • the protective layer 11 is formed of one or more microstructures, and the sectional area of the microstructures decreases from the substrate 5 toward the external layer. It preferably has a shape. This makes it possible to provide a gentle refractive index gradient between the substrate 5 and the outer layer. Therefore, among the fluorescent light emitted from the substrate 5 in the outer layer side, that is, in the light extraction direction, the fluorescent component having a large angle with respect to the normal direction is entirely present at the interface where the refractive index difference exists between the substrate 5 and the outer layer. The loss of reflected light can be minimized, and fluorescence can be efficiently extracted outside.
  • the microstructure has a conical shape, and the apex angle formed by the apex portion of the conical shape is formed at 45 ° or less.
  • the apex angle formed by the apex portion of the conical shape is formed at 45 ° or less.
  • the reflection layer 8 is provided on the side surfaces of the phosphor layers 7R, 7G, and 7B, isotropic in all directions from the phosphor layers 7R, 7G, and 7B.
  • the fluorescent light that emits light the fluorescent light directed toward the side surface can be efficiently guided in the front direction by the reflective layer 8. Therefore, it is possible to improve the light emission efficiency (improve the luminance in the front direction).
  • the light extracted in the front direction is about 20% of the total, and thus extracting the leaked light emitted on the side surface side is effective for improving the light emission efficiency. .
  • the phosphor substrate 2 of the present embodiment at least the light corresponding to the peak wavelength of the excitation light is transmitted to the outer surface side of the incident surface on which the excitation light is incident in the phosphor layers 7R, 7G, and 7B.
  • a wavelength selective transmission / reflection layer 9 having a property of reflecting at least light corresponding to the emission peak wavelength of the body layers 7R, 7G, 7B is provided. Therefore, the fluorescent light that is isotropically emitted in all directions from the phosphor layers 7R, 7G, and 7B toward the back side (excitation light side) is efficiently guided in the front direction by the wavelength selective transmission / reflection layer 9. be able to. Therefore, it is possible to improve the light emission efficiency (improve the luminance in the front direction).
  • the amount of light that can be extracted in the front direction is about 20% of the total, so that extracting leakage light emitted on the back side to the front side is effective for improving the light emission efficiency. is there.
  • FIG. 4 is a cross-sectional view showing a display device of this modification.
  • the same components as those in FIG. 1A used in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the display device 25 of the present modification includes a phosphor substrate 26 and an organic EL element substrate 27 (light source) bonded to the phosphor substrate 26 via the planarizing film 3.
  • blue light is emitted from the organic EL element substrate 27 as a light source.
  • the main emission peak of blue light is preferably 410 nm to 470 nm, for example.
  • the red pixel PR is provided with a red phosphor layer 7R that emits red light using blue light as excitation light
  • the green pixel PG emits green light using blue light as excitation light.
  • a green phosphor layer 7G is provided.
  • the blue pixel PB is provided with a light scattering layer 28 for scattering incident blue light and emitting it to the outside.
  • the light scattering layer 28 has a configuration in which, for example, particles having a refractive index different from these materials are dispersed in a light-transmitting inorganic or organic material, and the light incident on the light scattering layer 28 is a layer. It is scattered isotropically inside.
  • the reflection layer 8 is formed on the side surface of each phosphor layer 7R, 7G, and the wavelength selective transmission / reflection layer 9 is formed on the back surface (surface facing the light source). Is formed.
  • the blue pixel PB also has a reflective layer 8 formed on the side surface and a wavelength selective transmission / reflection layer 9 formed on the back surface (the surface facing the light source).
  • Other configurations of the display device 25 are the same as those in the first embodiment.
  • blue light from the organic EL element substrate 27 is incident on the phosphor substrate 26 as excitation light, and red fluorescence is generated by the red phosphor layer 7R in the red pixel PR, and the green pixel PG. Then, green fluorescence is generated by the green phosphor layer 7G.
  • the incident blue light is scattered by the light scattering layer 28 and emitted as it is, and full color display is performed by each of these color lights.
  • the display principle of the blue pixel PB is different from that of the first embodiment, also in this modification, the light extraction efficiency is improved to improve the conversion efficiency, the viewing angle characteristics are excellent, and the consumption is low. It is possible to obtain the same effect as that of the first embodiment that an excellent display device that can be powered can be realized.
  • FIG. 5A is a cross-sectional view showing an overall configuration of a display device according to this modification.
  • FIG. 5B is a cross-sectional view showing an LED substrate as a light source.
  • symbol is attached
  • the configuration of the phosphor substrate 2 is the same as that of the first embodiment, and the configuration of the light source is different.
  • the LED substrate 52 (light source) has an LED (light emitting diode) 64 as shown in FIG. 5B.
  • the LED 64 includes a first buffer layer 54, an n-type contact layer 55, a second n-type clad layer 56, a first n-type clad layer 57, an active layer 58, and a first p-type clad layer on one surface of the substrate 53.
  • a cathode 62 is formed on the n-type contact layer 55
  • an anode 63 is formed on the second buffer layer 61.
  • LED for example, ultraviolet light emission inorganic LED, blue light emission inorganic LED, etc. can be used as LED, A specific structure is not restricted to the above-mentioned thing.
  • the active layer 58 used in this modification is a layer that emits light by recombination of electrons and holes.
  • a known active layer material for LED can be used.
  • the active layer material for example, as ultraviolet active layer material, AlGaN, InAlN, In a Al b Ga 1-a-b N (0 ⁇ a, 0 ⁇ b, a + b ⁇ 1), as a blue active layer material includes In z Ga 1-z N (0 ⁇ z ⁇ 1) and the like, but this embodiment is not limited thereto.
  • As the active layer 58 a single quantum well structure or a multiple quantum well structure is used.
  • the active layer of the quantum well structure may be either n-type or p-type. However, when it is a non-doped (no impurity added) active layer, the half-value width of the emission wavelength is narrowed due to interband emission, and light emission with good color purity is achieved. Since it is obtained, it is preferable.
  • the active layer 58 may be doped with at least one of a donor impurity and an acceptor impurity. If the crystallinity of the active layer doped with the impurity is the same as that of the non-doped layer, the emission intensity between bands can be further increased by doping the donor impurity as compared with the non-doped layer.
  • the acceptor impurity is doped, the peak wavelength can be shifted to the lower energy side by about 0.5 eV from the peak wavelength of interband light emission, but the full width at half maximum is widened.
  • the light emission intensity can be further increased as compared with the light emission intensity of the active layer doped only with the acceptor impurity.
  • the conductivity type of the active layer is preferably doped with a donor impurity such as Si to be n-type.
  • n-type cladding layers 56 and 57 used in this modification a known n-type cladding layer material for LED can be used, and a single layer or a multilayer structure may be used.
  • the n-type cladding layers 56 and 57 are formed of an n-type semiconductor having a band gap energy larger than that of the active layer 58, a potential barrier against holes is formed between the n-type cladding layers 56 and 57 and the active layer 58. Holes can be confined in the active layer 58.
  • the n - type cladding layers 56 and 57 can be formed of n - type In x Ga 1-x N (0 ⁇ x ⁇ 1), but the present embodiment is not limited to these.
  • the p-type cladding layers 59 and 60 used in this modification a known p-type cladding layer material for LED can be used, and may be a single layer or a multilayer structure.
  • the p-type cladding layers 59 and 60 are made of a p-type semiconductor having a band gap energy larger than that of the active layer 58, a potential barrier against electrons is formed between the p-type cladding layers 59 and 60 and the active layer 58, and the electron Can be confined in the active layer 58.
  • the p-type cladding layers 59 and 60 can be formed from Al y Ga 1-y N (0 ⁇ y ⁇ 1), but the present embodiment is not limited to these.
  • n-type contact layer 55 used in this modification a known contact layer material for LED can be used.
  • an n-type contact layer 55 made of n-type GaN can be formed as a layer for forming an electrode in contact with the n-type cladding layers 56 and 57.
  • a p-type contact layer made of p-type GaN is also possible.
  • this contact layer is not particularly required if the second n-type cladding layer 56 and the second p-type cladding layer 60 are formed of GaN, and the second cladding layer is used as a contact layer. It is also possible.
  • a known film forming process for LEDs can be used, but the present embodiment is not particularly limited thereto.
  • a vapor phase growth method such as MOVPE (metal organic vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), HDVPE (hydride vapor phase epitaxy), for example, sapphire (C plane, A plane, R ), SiC (including 6H—SiC, 4H—SiC), spinel (MgAl 2 O 4 , especially its (111) plane), ZnO, Si, GaAs, or other oxide single crystal substrates (such as NGO) ) Or the like.
  • the light extraction efficiency is improved to improve the conversion efficiency, the same as in the first embodiment in which an excellent display device having excellent viewing angle characteristics and low power consumption can be realized. The effect of can be obtained.
  • FIG. 6A is a cross-sectional view illustrating an overall configuration of a display device according to this modification.
  • FIG. 6B is a cross-sectional view showing an inorganic EL substrate as a light source side substrate.
  • symbol is attached
  • the inorganic EL element substrate 68 (light source) has an inorganic EL element 75 as shown in FIG. 6B.
  • the inorganic EL element 75 has a configuration in which a first electrode 70, a first dielectric layer 71, a light emitting layer 72, a second dielectric layer 73, and a second electrode 74 are sequentially stacked on one surface of a substrate 69.
  • a known inorganic EL for example, an ultraviolet light emitting inorganic EL, a blue light emitting inorganic EL, or the like can be used, and the specific configuration is not limited to the above.
  • the substrate 69 the same one as the organic EL element substrate 4 described above can be used.
  • metals such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), and indium (In) and tin (Sn) are used.
  • a transparent electrode such as ITO is preferable for the electrode on the side from which light is extracted, and a reflective film such as aluminum is preferably used for the electrode on the side opposite to the direction from which light is extracted.
  • the first electrode 70 and the second electrode 74 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above-described materials. It is not limited to these formation methods. If necessary, the formed electrode can be patterned by a photolithography method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thicknesses of the first electrode 70 and the second electrode 74 are preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance increases and the drive voltage may increase.
  • a known dielectric material for inorganic EL can be used as the first dielectric layer 71 and the second dielectric layer 73 used in this modification.
  • a known dielectric material for inorganic EL examples include tantalum pentoxide (Ta 2 O 5 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum titanate ( Examples include AlTiO 3 ), barium titanate (BaTiO 3 ), and strontium titanate (SrTiO 3 ).
  • the present embodiment is not limited to these.
  • first dielectric layer 71 and the second dielectric layer 73 of the present embodiment may be configured by one type selected from the dielectric materials described above, or may be configured by stacking two or more types of materials. Good.
  • the thickness of each dielectric layer 71, 73 is preferably about 200 nm to 500 nm.
  • the light emitting layer 72 used in this modification a known light emitting material for inorganic EL can be used.
  • a light emitting material for example, as an ultraviolet light emitting material, ZnF 2 : Gd, and as a blue light emitting material, BaAl 2 S 4 : Eu, CaAl 2 S 4 : Eu, ZnAl 2 S 4 : Eu, Ba 2 SiS. 4 : Ce, ZnS: Tm, SrS: Ce, SrS: Cu, CaS: Pb, (Ba, Mg) Al 2 S 4 : Eu, and the like are exemplified, but the present embodiment is not limited thereto.
  • the film thickness of the light emitting layer 72 is preferably about 300 nm to 1000 nm.
  • the light extraction efficiency is improved to improve the conversion efficiency, the same as in the first embodiment in which an excellent display device with excellent viewing angle characteristics and low power consumption can be realized. The effect of can be obtained.
  • the organic EL element is exemplified in the above embodiment
  • the LED is exemplified in the second modification
  • the inorganic EL element is exemplified in the third modification.
  • a sealing film or a sealing substrate for sealing a light emitting element such as an organic EL element, an LED, or an inorganic EL element.
  • the sealing film and the sealing substrate can be formed by a known sealing material and sealing method.
  • the sealing film can be formed by applying a resin on the surface opposite to the substrate main body constituting the light source by using a spin coat method, an ODF, or a laminate method.
  • resin is further applied using spin coating, ODF, or lamination.
  • the sealing film can be formed by bonding.
  • Such a sealing film or a sealing substrate can prevent entry of oxygen and moisture into the light emitting element from the outside, thereby improving the life of the light source.
  • the light source and the phosphor substrate when they are bonded, they can be bonded with a general ultraviolet curable resin, a thermosetting resin, or the like.
  • a method of sealing an inert gas such as nitrogen gas or argon gas with a glass plate, a metal plate or the like can be mentioned.
  • a hygroscopic agent such as barium oxide in the enclosed inert gas because deterioration of the organic EL due to moisture can be more effectively reduced.
  • this embodiment is not limited to these members and forming methods.
  • the light emitted from the phosphor layers 7R, 7G, and 7B is directly emitted to the substrate 5.
  • a color filter may be disposed between the layer 10 and the purity of each color may be increased. Specifically, a red color filter is provided for the red pixel PR, a green color filter is provided for the green pixel PG, and a blue color filter is provided for the blue pixel PB. Conventional color filters can be used as the color filter.
  • the refractive index of the red color filter is substantially the same as the refractive index of the red phosphor layer 7R.
  • the refractive index of the green color filter is preferably substantially the same as the refractive index of the green phosphor layer 7G.
  • the refractive index of the blue color filter is preferably substantially the same as the refractive index of the blue phosphor layer 7B.
  • a color filter may be disposed between the intermediate layer 10 and the substrate 5. When a color filter is disposed between the intermediate layer 10 and the substrate 5, it is preferable that the red color filter, the green color filter, and the blue color filter have substantially the same refractive index as that of the substrate 5.
  • the color purity of each of the red pixel PR, the green pixel PG, and the blue pixel PB can be increased, and the color reproduction range of the display device can be expanded.
  • the red color filter formed under the red phosphor layer 7R, the green color filter formed under the green phosphor layer 7G, and the blue color filter formed under the blue phosphor layer 7B are external light. Absorbs the excitation light component contained therein. Therefore, it is possible to reduce or prevent light emission of the phosphor layers 7R, 7G, and 7B due to external light, and it is possible to reduce or prevent a decrease in contrast.
  • the red color filter, the green color filter, and the blue color filter are not absorbed by the phosphor layers 7R, 7G, and 7B, it is possible to prevent the excitation light to be transmitted from leaking outside. It is possible to prevent the color purity of the display from being lowered due to the color mixture of the light emitted from 7G and 7B and the excitation light.
  • FIG. 7 is a cross-sectional view showing the display device of this embodiment.
  • FIG. 8 is a plan view showing the display device of this embodiment.
  • the same components as those in FIG. 1A used in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the display device 82 of the present embodiment includes a phosphor substrate 2 and an organic EL element substrate 83 (light source) bonded on the phosphor substrate 2.
  • the organic EL element substrate 83 of the present embodiment uses an active matrix driving system using TFTs as means for switching whether to irradiate each of the red pixel PR, the green pixel PG, and the blue pixel PB. .
  • the configuration of the phosphor substrate 2 is the same as that of the first embodiment.
  • the organic EL element substrate 83 of the present embodiment emits ultraviolet light
  • the blue pixel PB has a blue phosphor layer that emits blue light using ultraviolet light as excitation light.
  • the organic EL element substrate 83 of the present embodiment emits blue light
  • the blue pixel PB has a light scattering layer that scatters blue light.
  • the organic EL element substrate 83 of the present embodiment has a TFT 85 formed on one surface of a main body 84. That is, the gate electrode 86 and the gate line 87 are formed, and the gate insulating film 88 is formed on the substrate 84 so as to cover the gate electrode 86 and the gate line 87.
  • An active layer (not shown) is formed on the gate insulating film 88.
  • a source electrode 89, a drain electrode 90, and a data line 91 are formed on the active layer, and covers the source electrode 89, the drain electrode 90, and the data line 91.
  • a planarizing film 92 is formed.
  • planarizing film 92 does not have to have a single layer structure, and may be configured by combining another interlayer insulating film and the planarizing film. Further, a contact hole 93 reaching the drain electrode 90 through the planarizing film or the interlayer insulating film is formed, and the organic EL element electrically connected to the drain electrode 90 via the contact hole 93 on the planarizing film 92 Twelve anodes 13 are formed.
  • the configuration of the organic EL element 12 itself is the same as that of the first embodiment.
  • the substrate 84 used for the active matrix driving type it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion.
  • a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT on the metal substrate with a conventional production apparatus, but the linear expansion coefficient is 1 ⁇ 10 ⁇ 5 / ° C. or less.
  • the TFT can be transferred and formed on the plastic substrate by forming the TFT on the glass substrate and then transferring the TFT to the plastic substrate. Since the light emission from the organic EL layer is emitted from the side opposite to the substrate, the substrate may be transparent or not transparent.
  • the TFT 85 is formed on the substrate 84 before the organic EL element 12 is formed, and functions as a pixel switching element and an organic EL element driving element.
  • Examples of the TFT 85 used in this embodiment include known TFTs, which can be formed using known materials, structures, and formation methods.
  • a metal-insulator-metal (MIM) diode can be used instead of the TFT 85.
  • amorphous silicon amorphous silicon
  • polycrystalline silicon polysilicon
  • microcrystalline silicon inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-gallium oxide- Examples thereof include oxide semiconductor materials such as zinc oxide, or organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene.
  • oxide semiconductor materials such as zinc oxide
  • organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene.
  • the structure of the TFT 85 include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.
  • the method for forming the active layer constituting the TFT 85 (1) a method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD), and (2) a silane (SiH 4 ) gas is used.
  • PECVD plasma induced chemical vapor deposition
  • SiH 4 silane
  • amorphous silicon by low pressure chemical vapor deposition (LPCVD), crystallizing amorphous silicon by solid phase epitaxy to obtain polysilicon, and then ion doping by ion implantation, (3) Si 2 H A method in which amorphous silicon is formed by LPCVD using 6 gases or PECVD using SiH 4 gas, annealed by a laser such as an excimer laser, and amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (Low temperature process), (4) LPCVD How is a polysilicon layer is formed by a PECVD method, a gate insulating film formed by thermal oxidation at 1000 ° C.
  • LPCVD low pressure chemical vapor deposition
  • the gate insulating film 88 of the TFT 85 used in this embodiment can be formed using a known material. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film. Further, the data line 91, the gate line 87, the source electrode 89, and the drain electrode 90 of the TFT 85 used in this embodiment can be formed using a known conductive material, for example, tantalum (Ta), aluminum (Al ), Copper (Cu), and the like.
  • the TFT 85 according to the present embodiment can be configured as described above, but is not limited to these materials, structures, and formation methods.
  • the interlayer insulating film 92 used in the present embodiment can be formed using a known material.
  • the formation method include dry processes such as chemical vapor deposition (CVD) and vacuum deposition, and wet processes such as spin coating. Moreover, it can also pattern by the photolithographic method etc. as needed.
  • the interlayer insulating film 92 and the light-shielding insulating film can be used in combination.
  • Examples of the light-shielding interlayer insulating film include those obtained by dispersing pigments or dyes such as phthalocyanine and quinaclonone in a polymer resin such as polyimide, color resists, black matrix materials, inorganic insulating materials such as Ni x Zn y Fe 2 O 4, and the like. Can be mentioned. However, the present embodiment is not limited to these materials and forming methods.
  • the TFT 85 formed on the substrate 84, various wirings, and electrodes form irregularities on the surface, and this irregularity causes the organic EL element 12 to have, for example, defects or disconnections in the anode 13 or the cathode 20, organic There is a possibility that a phenomenon such as a defect in the EL layer, a short circuit between the anode 13 and the cathode 20, a decrease in breakdown voltage, or the like may occur. Therefore, it is desirable to provide the planarizing film 92 on the interlayer insulating film for the purpose of preventing these phenomena.
  • the planarization film 92 used in the present embodiment can be formed using a known material, for example, an inorganic material such as silicon oxide, silicon nitride, or tantalum oxide, or an organic material such as polyimide, acrylic resin, or resist material. Etc.
  • Examples of the formation method of the planarizing film 92 include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method, but the present embodiment is not limited to these materials and the formation method.
  • the planarization film 92 may have a single layer structure or a multilayer structure.
  • the display device 82 includes a pixel portion 94, a gate signal driving circuit 95, a data signal driving circuit 96, a signal wiring 97, and a current supply line formed on the organic EL element substrate 83. 98, a flexible printed wiring board 99 (FPC) connected to the organic EL element substrate 83, and an external drive circuit 111.
  • FPC flexible printed wiring board
  • the organic EL element substrate 83 is electrically connected to an external driving circuit 111 including a scanning line electrode circuit, a data signal electrode circuit, a power supply circuit, and the like via the FPC 99 in order to drive the organic EL element 12.
  • a switching circuit such as a TFT 85 is disposed in the pixel portion 94.
  • the TFT 85 and the like are connected to wiring such as a data line 91 and a gate line 87.
  • a data signal driving circuit 96 and a gate signal driving circuit 95 for driving the organic EL element 12 are connected to the data line 91 and the gate line 87, respectively.
  • the data signal driving circuit 96 and the gate signal driving circuit 95 are connected to the external driving circuit 111 through a signal wiring 97.
  • a plurality of gate lines 87 and a plurality of data lines 91 are disposed, and a TFT 85 is disposed in the vicinity of the intersection between the gate lines 87 and the data lines 91.
  • the organic EL element 12 is driven by a voltage-driven digital gradation method.
  • Two TFTs, a switching TFT and a driving TFT, are arranged for each pixel (each organic EL element 12).
  • the driving TFT and the anode 13 of the organic EL element 12 are electrically connected through a contact hole 93 formed in the planarizing film 92.
  • a capacitor (not shown) for making the gate potential of the driving TFT constant is disposed in one pixel so as to be connected to the gate electrode of the driving TFT.
  • the present embodiment is not particularly limited to these, and the driving method may be the voltage-driven digital gradation method described above or the current-driven analog gradation method.
  • the number of TFTs is not particularly limited, and the organic EL element 9 may be driven by the two TFTs described above. Further, for the purpose of preventing variations in the characteristics (mobility, threshold voltage) of the TFT 85, the organic EL element 9 may be driven using two or more TFTs having a compensation circuit built in the pixel.
  • the light extraction efficiency is improved, the conversion efficiency is improved, the viewing angle characteristic is excellent, and an excellent display device capable of reducing power consumption can be realized.
  • the effect of can be obtained.
  • the active matrix driving type light source substrate 83 since the active matrix driving type light source substrate 83 is employed, a display device having excellent display quality can be realized.
  • the light emission time of the organic EL element 12 can be extended as compared with passive driving, and the driving current for obtaining desired luminance can be reduced, so that the power consumption can be reduced.
  • the light emitting region can be widened regardless of the formation region of the TFT, various wirings, etc., and the aperture ratio of the pixel can be increased. it can.
  • FIG. 9 is a cross-sectional view showing the display device of this embodiment.
  • the same components as those in FIG. 1A used in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the display device 113 of this embodiment includes a phosphor substrate 2, an organic EL element substrate 114 (light source), and a liquid crystal element 115.
  • the configuration of the phosphor substrate 2 is the same as that of the first embodiment, and a description thereof will be omitted.
  • the laminated structure of the organic EL element substrate 114 is the same as that shown in FIG. 1B in the first embodiment.
  • driving signals are individually supplied to the organic EL elements corresponding to the respective pixels, and each organic EL element is independently controlled to emit or not emit light.
  • the organic EL element 116 is not divided for each pixel, and functions as a planar light source common to all the pixels.
  • the liquid crystal element 115 is configured to be able to control the voltage applied to the liquid crystal layer for each pixel by using a pair of electrodes, and to control the transmittance of light emitted from the entire surface of the organic EL element 116 for each pixel. . That is, the liquid crystal element 115 has a function as an optical shutter that selectively transmits light from the organic EL element substrate 114 for each pixel.
  • the liquid crystal element 115 of this embodiment a known liquid crystal element can be used.
  • the liquid crystal element 115 includes a pair of polarizing plates 117 and 118, electrodes 119 and 120, alignment films 121 and 122, and a substrate 123.
  • the liquid crystal 124 is sandwiched between the alignment films 121 and 122.
  • one optically anisotropic layer is disposed between the liquid crystal cell and one polarizing plate 117, 118, or the optically anisotropic layer is disposed between the liquid crystal cell and both polarizing plates 117, 118. 2 may be arranged.
  • the type of liquid crystal cell is not particularly limited and may be appropriately selected depending on the purpose. Examples thereof include TN mode, VA mode, OCB mode, IPS mode, and ECB mode.
  • the liquid crystal element 115 may be passively driven or may be actively driven using a switching element such as a TFT.
  • the light extraction efficiency is improved, the conversion efficiency is improved, the viewing angle characteristic is excellent, and an excellent display device capable of reducing power consumption can be realized.
  • the effect of can be obtained.
  • the power consumption can be further reduced by combining the pixel switching by the liquid crystal element 115 and the organic EL element substrate 114 functioning as a planar light source.
  • the divided phosphor layers 155R, 155G, and 155B have different refractive indexes.
  • Intermediate layers 153R, 153G, and 153B having different refractive index gradients are individually provided between the individual phosphor layers 155R, 155G, and 155B and the substrate 151.
  • intermediate layers 153R, 153G, and 153B having different refractive index gradients are formed on the inner surface side (first surface) of the substrate 152.
  • a light absorption layer 154 is formed between the intermediate layers 153R, 153G, and 153B.
  • Phosphor layers 155R, 155G, and 155B are formed on the intermediate layers 153R, 153G, and 153B, respectively.
  • a protective layer 156 is formed between the substrate 152 and the outside air side serving as an outer layer of the substrate 152. That is, the protective layer 156 is formed on the second surface of the substrate 152.
  • a plurality of phosphor layers 155R, 155G, and 155B are provided for each pixel.
  • the plurality of phosphor layers 155R, 155G, and 155B are made of different phosphor materials and refractive indexes so as to emit light of different colors depending on the pixels.
  • the light absorption layer 154 is made of a light absorptive material and is formed corresponding to a region between adjacent pixels. The light absorption layer 154 can improve display contrast.
  • the phosphor layers 155R, 155G, and 155B are made of, for example, a thin film having a rectangular shape in plan view.
  • Reflective layers 157 are formed on all side surfaces of the phosphor layers 155R, 155G, and 155B.
  • the reflection layer 157 may not be formed on all the side surfaces of the phosphor layers 155R, 155G, and 155B.
  • the reflective layer 157 may be formed on at least one side surface of the phosphor layers 155R, 155G, and 155B.
  • a wavelength selective transmission / reflection film 158 is formed on the phosphor layers 155R, 155G, and 155B, that is, on the incident surface (outer surface side) on which the excitation light is incident.
  • the basic components of the phosphor substrate 151 according to the present embodiment are the same as those of the phosphor substrate according to the first embodiment, but the refractive index gradient is different for each of the phosphor layers 155R, 155G, and 155B having different refractive indexes.
  • the difference from the first embodiment is that the intermediate layers 155R, 155G, and 155B are individually formed.
  • the intermediate layers 153R, 153G, and 153B of the present embodiment are provided between the phosphor layers 155R, 155G, and 155B and the substrate 152 as described above. From the phosphor layers 155R, 155G, and 155B to the substrate 152, the intermediate layers 153R, 153G, and 153B have different refractive index gradients. As the refractive index gradient, when the refractive index of the phosphor layer 155R is n1 (R) and the refractive index of the substrate 152 is n2, the light extraction surface of the phosphor layer 155R is directed from the phosphor layer 155R toward the substrate 152.
  • the thickness direction orthogonal to the (surface on the substrate 152 side) it is preferable to have a gradually changing gradient within a range from n1 (R) to n2. Specifically, it is preferable to have a gradient that changes stepwise or continuously. Further, when the refractive index of the phosphor layer 155G is n1 (G) and the refractive index of the substrate 152 is n2, the light extraction surface (on the substrate 152 side) of the phosphor layer 155G faces the substrate 152 from the phosphor layer 155G. In the thickness direction orthogonal to the plane, it is preferable to have a gently changing gradient in the range from n1 (R) to n2.
  • the refractive index of the phosphor layer 155B is n1 (B) and the refractive index of the substrate 152 is n2, the light extraction surface (on the substrate 152 side) of the phosphor layer 155B is directed from the phosphor layer 155B to the substrate 152.
  • the thickness direction orthogonal to the plane it is preferable to have a gently changing gradient in the range from n1 (R) to n2.
  • the refractive index n1 of the phosphor layers 155R, 155G, and 155B is, for example, about 2.0 to 2.3.
  • the refractive index n2 of the substrate 152 is about 1.5 in the case of a glass substrate, for example. Therefore, for example, when the refractive index n1 (R) of the phosphor layer 155R is 2.1, the refractive index gradient of the intermediate layer 153R is about 2.1 to 1 in the direction from the phosphor layer 155R to the substrate 152. It is preferable that it is reduced stepwise or continuously to about .5.
  • the refractive index gradient of the intermediate layer 153G is about 2.2 to 1 in the direction from the phosphor layer 155G to the substrate 152. It is preferable that it is reduced stepwise or continuously to about .5. Further, for example, when the refractive index n1 (R) of the phosphor layer 155B is 2.3, the refractive index gradient of the intermediate layer 153B is about 2.3 to 1 in the direction from the phosphor layer 155B to the substrate 152. It is preferable that it is reduced stepwise or continuously to about .5.
  • the intermediate layers 153R, 153G, and 153B have conventionally had fluorescent components having a large angle with respect to the normal direction of the light extraction surface of the phosphor layers 155R, 155G, and 155B.
  • Light loss caused by total reflection at the interface where there is a difference in refractive index between 155B and the substrate 152 can be minimized.
  • the intermediate layers 153R, 153G, and 153B having such a refractive index gradient are formed by, for example, (1) laminating a plurality of layers (materials) having different refractive indexes stepwise or continuously. be able to.
  • an intermediate layer having a refractive index gradient is formed.
  • the refractive index of the material to be laminated and in (2), the refractive index suitable for each layer of the intermediate layers 153R, 153G, and 153B is changed by changing the refractive index and the gradient of the microstructure material.
  • a rate gradient can be selected.
  • the example described here is a method in which the intermediate layers 153R, 153G, and 153B and the protective layer 156 are each formed of a structure having a conical microstructure.
  • a film in which a UV effect resin is mixed with an intermediate layer forming material serving as a precursor of the intermediate layer 153R is formed.
  • an injection molding machine having an aluminum mold having a concave shape of a cone-shaped microstructure (for example, the vertex nucleus is 30 °)
  • an intermediate layer 153R having a refractive index gradient having a number of micro-conical shapes. Is transferred to the substrate 152.
  • the intermediate layer 153R formed on the entire surface of the substrate is subjected to UV exposure and development by removing the light-shielding mask, thereby patterning the intermediate layer 153R on the substrate 152.
  • the intermediate layers 153G and 153B are formed by patterning.
  • phosphor layers 155R, 155G, and 155B are sequentially formed on the intermediate layers 153R, 153G, and 153B using a dispenser.
  • the reflective layer 157, the wavelength selective transmission / reflection layer 158, and the protective layer 156 are formed in this order to obtain the phosphor substrate 151.
  • Examples of the electronic device including the display device of the embodiment include a mobile phone shown in FIG. 10A and a television receiver shown in FIG. 10B.
  • a cellular phone 127 shown in FIG. 10A includes a main body 128, a display unit 129, an audio input unit 130, an audio output unit 131, an antenna 132, an operation switch 133, and the like. It has been.
  • a television receiver 135 illustrated in FIG. 10B includes a main body cabinet 136, a display unit 137, a speaker 138, a stand 139, and the like, and the display device of the above embodiment is used for the display unit 137.
  • the display device of the above-described embodiment is used, an electronic device with low power consumption and excellent display quality can be realized.
  • the illumination device 141 includes an optical film 142, a phosphor substrate 143, an organic EL element 147 including an anode 144, an organic EL layer 145, and a cathode 146, a thermal diffusion sheet 148, a sealing A substrate 149, a sealing resin 150, a heat dissipation material 151, a driving circuit 152, a wiring 153, and a hooking ceiling 154 are provided.
  • the phosphor substrate of the above-described embodiment is used as the phosphor substrate 143, a bright and low-power illuminating device can be realized.
  • the display device described in the embodiment preferably includes a polarizing plate on the light extraction side.
  • a polarizing plate a combination of a conventional linear polarizing plate and a ⁇ / 4 plate can be used.
  • the polarizing plate By providing such a polarizing plate, external light reflection from the electrode of the display device or external light reflection on the surface of the substrate or the sealing substrate can be prevented, and the contrast of the display device can be improved.
  • specific descriptions regarding the shape, number, arrangement, material, formation method, and the like of each component of the phosphor substrate and the display device are not limited to the above-described embodiments, and can be appropriately changed.
  • the substrate As the substrate, 0.7 mm glass was used. After washing with water, pure water ultrasonic cleaning 10 minutes, acetone ultrasonic cleaning 10 minutes, and isopropyl alcohol vapor cleaning 5 minutes were performed, followed by drying at 100 ° C. for 1 hour.
  • a green phosphor layer having a thickness of 100 ⁇ m was formed on the substrate.
  • the green phosphor layer was formed by the following method. First, 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour. 20 g of this mixture and green phosphor Ca 0.97 Mg 0.03 : ZrO 3 : Ho were transferred to a mortar, mixed well, and then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours. The surface modified Ba 2 SiO 4 : Eu 2+ was obtained.
  • a green phosphor-forming coating solution was prepared by stirring with a machine.
  • the green phosphor-forming coating solution prepared above was applied to a desired position with a width of 3 mm on the glass by a screen printing method. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a green phosphor layer, thereby completing a phosphor substrate.
  • Example 1 On the same glass substrate as that in the comparative example, an intermediate layer 10 composed of a plurality of micro-conical shapes having a refractive index gradient as shown in FIGS. 3A and 3B was formed.
  • the intermediate layer forming material 31 a transparent resin (polyethylene) added with a metal compound (TiO 2 ) was used.
  • a transparent resin polyethylene
  • TiO 2 metal compound
  • FIG. 3A an intermediate layer forming material 31 composed of these mixed materials is molded using an injection molding machine equipped with an aluminum mold 30, and as shown in FIG.
  • the intermediate layer 10 is bonded onto the glass substrate 5 as shown in FIG. 3B. It was.
  • a green phosphor layer was formed on the intermediate layer 10 by the same method as in the comparative example.
  • the luminance conversion efficiency at 25 ° C. of fluorescence extracted from the front surface was measured.
  • the luminance of the blue LED was 1000 cd / m 2 , but after passing through the phosphor, it emitted green light having a light emission peak at 547 nm, the luminance was 1105 cd / m 2 , the luminance The conversion efficiency was 110%, which was 1.1 times higher than that of the comparative example.
  • Example 2 An aluminum total reflection film was uniformly formed with a film thickness of 50 nm on the side surface of the phosphor substrate of Example 1 on the phosphor layer by sputtering. Thereafter, in the same manner as in the comparative example, when a blue LED was used as excitation light and 450 nm light was incident from the back surface of the phosphor substrate, the luminance conversion efficiency at 25 ° C. of fluorescence extracted from the front surface was measured.
  • the brightness of the blue LED was 1000 cd / m 2 , but after passing through the phosphor, it emitted green light having a light emission peak at 547 nm, the brightness was 2721 cd / m 2 , the brightness The conversion efficiency was 270%, which was 2.7 times higher than that of the comparative example.
  • the luminance conversion efficiency at 25 ° C. of fluorescence extracted from the front surface was measured.
  • the luminance of the blue LED was 1000 cd / m 2 , but after passing through the phosphor, it emitted green light having a light emission peak at 547 nm and the luminance was 3512 cd / m 2 .
  • the conversion efficiency was 350%, which was 3.5 times higher than the comparative example.
  • Example 4 On the glass substrate of the phosphor substrate produced in Example 3, as shown in FIG. 3I, the protective layer 11 composed of a plurality of microconical shapes having a refractive index gradient was formed.
  • a transparent resin polyethylene
  • This material was molded using an injection molding machine equipped with an aluminum mold having a plurality of concave microconical shapes as shown in FIG. 3A, and a large number of microconical shapes ( A protective layer 11 having a refractive index gradient having a vertex angle of 30 ° was formed.
  • the protective layer 11 was affixed on the glass substrate using the commercially available colorless and transparent silicone oil compound for optical joining which has a refractive index substantially equal to the refractive index of a glass substrate.
  • the luminance conversion efficiency at 25 ° C. of fluorescence extracted from the front surface was measured.
  • the brightness of the blue LED was 1000 cd / m 2 , but after passing through the phosphor, it emitted green light having a light emission peak at 547 nm, and the brightness was 3832 cd / m 2 .
  • the conversion efficiency was 380%, and an improvement in luminance of 3.8 times that of the comparative example was observed.
  • Example 5 On the same glass substrate as in the comparative example, magnesium fluoride (refractive index: 1.38) and titanium oxide (refractive index: 2.30) were simultaneously changed by changing the deposition rate little by little by the electron beam evaporation method. Vapor deposition at 200 ° C. The deposition rate was changed by changing the deposition rate ratio between magnesium fluoride and titanium oxide from 10: 0 to 0:10 at 1 minute intervals.
  • an intermediate layer having a gradual refractive index gradient in which the concentration of magnesium fluoride is high and the concentration of titanium oxide gradually increases as the distance from the glass substrate in the thickness direction is increased.
  • a green phosphor layer was formed on the intermediate layer by the same method as in the comparative example.
  • Example 2 an aluminum total reflection film was uniformly formed with a film thickness of 50 nm on the side surface of the phosphor substrate on the phosphor layer by sputtering.
  • the luminance conversion efficiency at 25 ° C. of fluorescence extracted from the front surface was measured.
  • the luminance of the blue LED was 1000 cd / m 2 , but after passing through the phosphor, it emitted green light having a light emission peak at 547 nm, the luminance was 3443 cd / m 2 , the luminance The conversion efficiency was 340%, which was 3.4 times higher than the comparative example.
  • Example 6 An intermediate layer composed of a plurality of microconical shapes having a refractive index gradient was formed on a 0.7 mm glass substrate.
  • a transparent resin polyethylene
  • a metal compound TiO 2
  • These mixed materials are molded using an injection molding machine having an aluminum mold having a plurality of concave microconical shapes shown in FIG. 3A, and a large number of microconical shapes (vertex angle: 30 °) are formed.
  • An intermediate layer having a refractive index gradient was formed.
  • the glass substrate and the intermediate layer were bonded together using a commercially available colorless and transparent silicone oil compound for optical bonding having a refractive index substantially equal to the refractive index of the glass substrate.
  • a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed on the intermediate layer to obtain a phosphor substrate.
  • a trapezoidal low-reflection layer (light absorption layer) made of chromium was formed on the substrate with a width of 20 ⁇ m, a film thickness of 500 nm, and a pitch of 200 ⁇ m.
  • red phosphor layer In the formation of the red phosphor layer, first, 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane were added to 0.16 g of aerosil having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour. This mixture and red phosphor K 5 Eu 2.5 (WO 4 ) 6.25 20 g were transferred to a mortar, thoroughly mixed, and then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours, Surface-modified K 5 Eu 2.5 (WO 4 ) 6.25 was obtained.
  • the green phosphor layer was formed by adding 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane to 0.16 g of aerosil having an average particle diameter of 5 nm and stirring for 1 hour at an open system room temperature.
  • This mixture and the green phosphor Ba 2 SiO 4 : Eu 2+ 20 g were transferred to a mortar, thoroughly mixed, and then heated in an oven at 70 ° C. for 2 hours and further in an oven at 120 ° C. for 2 hours, and surface-modified Ba 2.
  • SiO 4 : Eu 2+ was obtained.
  • the blue scattering layer-forming coating solution prepared above was applied to a region where the low reflection layer on the glass was not formed by screen printing. Then, it heat-dried for 4 hours in the vacuum oven (200 degreeC, 10 mmHg conditions), and formed the blue scattering layer.
  • an aluminum total reflection film was uniformly formed with a film thickness of 50 nm on the side surface of the phosphor layer by sputtering.
  • a dielectric multilayer film prepared by alternately forming six layers 47) by EB vapor deposition was formed to a thickness of 100 nm by sputtering.
  • a reflective electrode is formed on a 0.7 mm thick glass substrate by sputtering so that the film thickness is 100 nm, and an indium-tin oxide (ITO) film is formed thereon.
  • ITO indium-tin oxide
  • a film was formed by sputtering to a thickness of 20 nm, and a reflective electrode (anode) was formed as the first electrode.
  • the first electrode width was 160 ⁇ m
  • the pitch was 200 ⁇ m
  • 90 stripes were patterned by a conventional photolithography method.
  • SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • this substrate was fixed to a substrate holder in a resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less to form each organic layer.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • N, N′-di-l-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine NPD
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III ) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber.
  • a shadow mask for forming a second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 500 ⁇ m and a pitch of 600 ⁇ m in a direction opposite to the stripe of the first electrode) and the above-mentioned
  • the substrate is aligned, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ ⁇ ⁇ ⁇ / sec in a desired pattern (thickness) 1 nm).
  • silver was formed in a desired pattern (thickness: 19 nm) at a deposition rate of 1 cm / sec for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. .
  • the second electrode was formed.
  • a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be increased.
  • Light emission energy from the EL element can be more efficiently propagated to the phosphor layer.
  • the emission peak is adjusted to 460 nm and the half-value width is adjusted to 50 nm by the microcavity effect.
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method.
  • the light source substrate which consists of an organic EL element was produced by the above.
  • the organic EL element substrate and the phosphor substrate manufactured as described above are aligned by an alignment marker formed outside the display unit.
  • a thermosetting resin was applied to the phosphor substrate.
  • the two substrates were brought into close contact with each other through the thermosetting resin, and the thermosetting resin was cured by heating at 80 ° C. for 2 hours.
  • the above-mentioned bonding step was performed in a dry air environment (water content: ⁇ 80 ° C.) for the purpose of preventing deterioration of the organic EL due to water.
  • an organic EL display device was completed by connecting terminals formed in the periphery to an external power source.
  • a blue light emitting organic EL is used as an excitation light source that can be arbitrarily switched by applying a desired current to a desired striped electrode from an external power source, and light is emitted from blue light in each of the red phosphor layer and the green phosphor layer.
  • red and green isotropic light emission of red and green was obtained, and isotropic blue light emission could be obtained through the blue scattering layer. In this way, full color display was possible, and a good image and an image with good viewing angle characteristics could be obtained.
  • Example 7 [Active Driven Blue Organic EL + Phosphor Method]
  • the phosphor substrate was produced in the same manner as in Example 6.
  • An amorphous silicon semiconductor film was formed on a 100 ⁇ 100 mm square glass substrate by PECVD.
  • a polycrystalline silicon semiconductor film was formed by performing a crystallization treatment.
  • the polycrystalline silicon semiconductor film was patterned into a plurality of islands by using a photolithography method.
  • a gate insulating film and a gate electrode layer were formed in this order on the patterned polycrystalline silicon semiconductor layer, and patterning was performed using a photolithography method.
  • the patterned polycrystalline silicon semiconductor film was doped with an impurity element such as phosphorus to form source and drain regions, and a TFT element was produced. Thereafter, a planarizing film was formed.
  • the planarizing film was formed by laminating a silicon nitride film formed by PECVD and an acrylic resin layer in this order using a spin coater. First, after a silicon nitride film was formed, the silicon nitride film and the gate insulating film were collectively etched to form a contact hole leading to the source and / or drain region, and then a source wiring was formed.
  • the capacitor for setting the gate potential of the TFT to a constant potential is formed by interposing an insulating film such as an interlayer insulating film between the drain of the switching TFT and the source of the driving TFT.
  • a driving TFT, a first electrode of a red light emitting organic EL element, a first electrode of a green light emitting organic EL element, and a first electrode of a blue light emitting organic EL element are provided on the active matrix substrate through the planarization layer. Contact holes were formed for electrical connection.
  • a first electrode (anode) of each pixel is formed by sputtering so as to be electrically connected to a contact hole provided through a planarization layer connected to a TFT for driving each light emitting pixel. did.
  • the first electrode was formed by laminating Al (aluminum) with a thickness of 150 nm and IZO (indium oxide-zinc oxide) with a thickness of 20 nm.
  • the first electrode was patterned into a shape corresponding to each pixel by a conventional photolithography method.
  • the area of the first electrode was set to 300 ⁇ m ⁇ 160 ⁇ m. Further, it was formed on a 100 mm ⁇ 100 mm square substrate.
  • the display unit was 80 mm ⁇ 80 mm, a 2 mm wide sealing area was provided on the top, bottom, left, and right of the display unit, and a 2 mm terminal lead-out unit was provided on the short side outside the sealing area. On the long side, a 2 mm wide terminal lead-out portion was provided on the side to be bent.
  • the active substrate was cleaned.
  • acetone and IPA were used for ultrasonic cleaning for 10 minutes, and then UV-ozone cleaning was performed for 30 minutes.
  • this substrate was fixed to a substrate holder in an in-line type resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less.
  • Each organic layer was formed.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • N, N′-di-l-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine NPD
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating evaporation.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III ) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • UH-2 1,4-bis-triphenylsilyl-benzene
  • FIrpic picolinate iridium
  • a hole blocking layer (thickness: 10 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a translucent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber.
  • the shadow mask for forming the second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction facing the stripe of the first electrode) and the substrate are aligned.
  • magnesium and silver are formed into a desired pattern by co-evaporation at a rate of 0.1% / sec and 0.9% / sec on the surface of the electron injection layer by vacuum deposition, respectively (thickness: 1 nm) )did.
  • silver is formed in a desired pattern at a deposition rate of 1 ⁇ / sec (thickness: 19 nm). )did. Thereby, the second electrode was formed.
  • a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be increased. It becomes possible to propagate the luminescence energy from the phosphor layer more efficiently.
  • the emission peak is adjusted to 460 nm and the half-value width is adjusted to 50 nm by the microcavity effect.
  • an inorganic protective layer made of 3 ⁇ m of SiO 2 was patterned by plasma CVD from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions using a shadow mask.
  • an active drive type organic EL element substrate was produced.
  • the active drive type organic EL element substrate and the phosphor substrate produced as described above were aligned with an alignment marker formed outside the display unit.
  • a thermosetting resin was applied to the phosphor substrate, and both substrates were brought into close contact with each other through the thermosetting resin, and the thermosetting resin was cured by heating at 90 ° C. for 2 hours.
  • the above-mentioned bonding step was performed in a dry air environment (water content: ⁇ 80 ° C.) for the purpose of preventing deterioration of the organic EL due to water.
  • a blue light emitting organic EL is used as an excitation light source that can be arbitrarily switched by applying a desired current to each pixel from an external power source, and red light and green light are emitted from blue light in a red phosphor layer and a green phosphor layer, respectively. And isotropic light emission of red and green was obtained, and isotropic blue light emission could be obtained through the blue scattering layer. In this way, full color display was possible, and a good image and an image with good viewing angle characteristics could be obtained.
  • Example 8 [Blue LED + phosphor method]
  • the phosphor substrate was produced in the same manner as in Example 6.
  • TMG trimethylgallium
  • NH 3 a buffer layer made of GaN was grown to a thickness of 60 nm on the C surface of the sapphire substrate set in the reaction vessel at 550 ° C.
  • the temperature was raised to 1050 ° C., and an n-type contact layer made of Si-doped n-type GaN was grown to a thickness of 5 ⁇ m using SiH 4 gas in addition to TMG and NH 3 .
  • TMA trimethylaluminum
  • the temperature is lowered to 850 ° C., and the first n-type cladding layer made of Si-doped n-type In 0.01 Ga 0.99 N is made 60 nm using TMG, TMI (trimethylindium), NH 3 and SiH 4. It was made to grow with the film thickness. Subsequently, an active layer made of non-doped In 0.05 Ga 0.95 N was grown at a thickness of 5 nm at 850 ° C. using TMG, TMI, and NH 3 .
  • CPM cyclopentadienyl magnesium
  • TMG cyclopentadienyl magnesium
  • TMI cyclopentadienyl magnesium
  • a first p-type cladding layer made of Mg-doped p-type In 0.01 Ga 0.99 N at 850 ° C. has a thickness of 60 nm. It was made to grow with the film thickness.
  • the temperature is raised to 1100 ° C., and a second p-type cladding layer made of Mg-doped p-type Al 0.3 Ga 0.7 N is grown to a thickness of 150 nm using TMG, TMA, NH 3 , and CPMg. I let you.
  • a p-type contact layer made of Mg-doped p-type GaN is grown to a thickness of 600 nm.
  • the temperature is lowered to room temperature, the wafer is taken out of the reaction vessel, and the wafer is annealed at 720 ° C. to reduce the resistance of the p-type layer.
  • a mask having a predetermined shape was formed on the surface of the uppermost p-type contact layer, and etching was performed until the surface of the n-type contact layer was exposed.
  • a negative electrode made of titanium (Ti) and aluminum (Al) was formed on the surface of the n-type contact layer, and a positive electrode made of nickel (Ni) and gold (Au) was formed on the surface of the p-type contact layer.
  • the wafer is separated into 350 ⁇ m square chips, and the LED chip thus prepared is fixed with a UV curable resin on a substrate on which wiring for connecting to a separately prepared external circuit is formed, The chip and the wiring on the substrate were electrically connected to produce a light source substrate composed of a blue LED.
  • the light source substrate and the phosphor substrate produced as described above were aligned using an alignment marker formed outside the display unit.
  • a thermosetting resin was applied to the phosphor substrate.
  • the two substrates were brought into close contact with each other through the thermosetting resin, and the thermosetting resin was cured by heating at 80 ° C. for 2 hours.
  • the above-mentioned bonding step was performed in a dry air environment (water content: ⁇ 80 ° C.) for the purpose of preventing deterioration of the organic EL due to water.
  • the LED display device was completed by connecting terminals formed in the periphery to an external power source.
  • a blue light emitting organic EL is used as an excitation light source that can be arbitrarily switched by applying a desired current to a desired striped electrode from an external power source, and light is emitted from blue light in each of the red phosphor layer and the green phosphor layer.
  • red and green isotropic light emission of red and green was obtained, and isotropic blue light emission could be obtained through the blue scattering layer. In this way, full color display was possible, and a good image and an image with good viewing angle characteristics could be obtained.
  • Example 9 [Blue Organic EL + Liquid Crystal + Phosphor Method] An intermediate layer composed of a plurality of microconical shapes having a refractive index gradient was formed on a 0.7 mm glass substrate.
  • a transparent resin polyethylene
  • a metal compound TiO 2
  • These mixed materials are molded using an injection molding machine provided with an aluminum mold having a plurality of concave microconical shapes shown in FIG.
  • An intermediate layer having a refractive index gradient was formed.
  • the glass substrate and the intermediate layer were bonded together using a commercially available colorless and transparent silicone oil compound for optical bonding having a refractive index substantially equal to the refractive index of the glass substrate.
  • a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed on the intermediate layer to obtain a phosphor substrate.
  • a trapezoidal low-reflection layer (light absorption layer) made of chromium was formed on the substrate with a width of 20 ⁇ m, a film thickness of 500 nm, and a pitch of 200 ⁇ m.
  • the water repellent treatment of the surface of the low reflection layer was performed by CF 4 plasma treatment.
  • the red phosphor layer is formed by first [2- [2- [4- (dimethylamino) phenyl] ethenyl] -6-methyl-4H-pyran-4-ylidene] -propanedinitrile (DCM) (0. 02 mol / kg (solid content ratio)) was mixed with the epoxy thermosetting resin and stirred with a stirrer to prepare a red phosphor-forming coating solution.
  • the red phosphor-forming coating solution prepared above was applied to an area where the low reflection layer on the glass was not formed by an ink jet method. Subsequently, it was cured in a vacuum oven (150 ° C.) for 1 hour to form a red phosphor layer having a thickness of 2 ⁇ m.
  • the cross-sectional shape of the red phosphor layer was a bowl shape due to the effect of the water repellent treatment of the low reflection layer.
  • the green phosphor layer is formed by forming 2,3,6,7-tetrahydro-11-oxo-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolidine-10-carboxylic acid ( Coumarin 519) (0.02 mol / kg (solid content ratio)) was mixed with an epoxy thermosetting resin and stirred with a stirrer to prepare a green phosphor-forming coating solution.
  • the green phosphor-forming coating liquid prepared as described above was applied to an area where the low reflection layer on the glass was not formed by an ink jet method.
  • the cross-sectional shape of the green phosphor layer was a bowl-like shape due to the effect of the water repellent treatment of the low reflection layer.
  • the blue phosphor layer is formed by first mixing 7-hydroxy-4-methylcoumarin (coumarin 4) (0.02 mol / kg (solid content ratio)) with an epoxy thermosetting resin and stirring with a stirrer. A forming coating solution was prepared. The blue phosphor-forming coating solution prepared as described above was applied to an area where the low reflection layer on the glass was not formed by an inkjet method. Then, it hardened
  • the cross-sectional shape of the blue phosphor layer was a bowl shape due to the effect of the water repellent treatment of the low reflection layer.
  • an aluminum total reflection film having a thickness of 50 nm was uniformly formed on the side surface of the phosphor layer by sputtering.
  • a dielectric multilayer film produced by alternately depositing six layers by EB vapor deposition was formed to a thickness of 100 nm by sputtering.
  • a planarizing film is formed on the dielectric multilayer film using an acrylic resin by spin coating, and a polarizing film, a transparent electrode, and a light distribution film are formed on the planarizing film by a conventional method.
  • a phosphor substrate was prepared.
  • a switching element made of TFT was formed on a glass substrate by a conventional method.
  • an ITO transparent electrode having a thickness of 100 nm was formed so as to be in electrical contact with the TFT through a contact hole.
  • the transparent electrode was patterned by a normal photolithography method so as to have the same pitch as that of the pixels of the organic EL portion produced previously.
  • an alignment film was formed by a printing method.
  • the substrate on which the TFT was formed and the phosphor substrate were bonded via a 10 ⁇ m spacer, and a TN mode liquid crystal material was injected between both substrates to complete the liquid crystal / phosphor portion.
  • a reflective electrode is formed on a 0.7 mm thick glass substrate by sputtering so that the film thickness is 100 nm, and indium-tin oxide (ITO) is formed thereon.
  • ITO indium-tin oxide
  • a film was formed by sputtering to a thickness of 20 nm, and a reflective electrode (anode) was formed as the first electrode.
  • the first electrode was patterned to a desired size by a conventional photolithography method.
  • SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • this substrate was fixed to a substrate holder in a resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less to form each organic layer.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • CBP carbazole biphenyl
  • a 10 nm-thick hole transport layer was formed by resistance heating vapor deposition.
  • a near ultraviolet organic light emitting layer was formed on the hole transport layer.
  • This near-ultraviolet organic light-emitting layer is formed by depositing 3,5-bis (4-t-butyl-phenyl) -4-phenyl- [1,2,4] triazole (TAZ) (near-ultraviolet phosphorescent light-emitting material) with each deposition rate was made to be 1.5 liters / sec. Next, an electron transport layer (thickness: 20 nm) was formed on the light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • TTZ 3,5-bis (4-t-butyl-phenyl) -4-phenyl- [1,2,4] triazole
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron injection layer (thickness: 0.5 nm) is formed on the electron transport layer using lithium fluoride (LiF).
  • a translucent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber.
  • a shadow mask for forming a second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 500 ⁇ m and a pitch of 600 ⁇ m in a direction facing the stripe of the first electrode)
  • the substrate are aligned, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 ⁇ / sec and 0.9 sec / sec in a desired pattern. (Thickness: 1 nm).
  • silver was formed in a desired pattern (thickness: 19 nm) at a deposition rate of 1 cm / sec for the purpose of emphasizing the interference effect and preventing a voltage drop due to wiring resistance at the second electrode. .
  • the second electrode was formed.
  • a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be increased. It becomes possible to propagate the luminescence energy from the phosphor layer more efficiently.
  • the emission peak is adjusted to 370 nm and the half-value width is adjusted to 30 nm by the microcavity effect.
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method.
  • the light source substrate which consists of an organic EL element was produced by the above.
  • the organic EL part and the liquid crystal / phosphor part were aligned and cured with a thermosetting resin to complete the display device.
  • a desired good image and an image with good viewing angle characteristics could be obtained by applying a desired voltage to the electrode for driving the liquid crystal. .
  • the aspect of the present invention can be used for a phosphor substrate, various display devices using the phosphor substrate, and a lighting device.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention porte sur un substrat fluorescent qui comprend un substrat, une première couche fluorescente, et une première couche intermédiaire. Dans la première couche fluorescente, une fluorescence est produite par une lumière d'excitation incidente, et la lumière produite est émise à partir d'une surface d'extraction de lumière. La première couche intermédiaire est disposée entre la première couche fluorescente et le substrat, et a un gradient d'indice de réfraction allant du proche de la première couche fluorescente à proche du substrat.
PCT/JP2012/052615 2011-02-10 2012-02-06 Substrat fluorescent et dispositif d'affichage et dispositif d'éclairage l'utilisant WO2012108384A1 (fr)

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JP2015060789A (ja) * 2013-09-20 2015-03-30 ウシオ電機株式会社 蛍光光源装置およびその製造方法
WO2015072067A1 (fr) * 2013-11-13 2015-05-21 パナソニックＩｐマネジメント株式会社 Dispositif électroluminescent
EP2986082A4 (fr) * 2013-04-12 2016-05-11 Panasonic Ip Man Co Ltd Dispositif électroluminescent
JP2016194697A (ja) * 2016-05-10 2016-11-17 ウシオ電機株式会社 蛍光光源装置
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WO2014080120A1 (fr) * 2012-11-22 2014-05-30 Arkema France Procede de preparation de sel d'imides contenant un groupement fluorosulfonyle
FR2998297A1 (fr) * 2012-11-22 2014-05-23 Arkema France Procede de preparation de sel d'imides contenant un groupement fluorosulfonyle
US9725318B2 (en) 2012-11-22 2017-08-08 Arkema France Method for preparing imide salts containing a fluorosulphonyl group
EP2986082A4 (fr) * 2013-04-12 2016-05-11 Panasonic Ip Man Co Ltd Dispositif électroluminescent
US9595648B2 (en) 2013-04-12 2017-03-14 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device
US9647240B2 (en) 2013-05-21 2017-05-09 Panasonic Intellectual Property Management Co., Ltd. Light emitting apparatus
JP2015060789A (ja) * 2013-09-20 2015-03-30 ウシオ電機株式会社 蛍光光源装置およびその製造方法
US10047919B2 (en) 2013-09-20 2018-08-14 Ushio Denki Kabushiki Kaisha Fluorescent light source device, and method for manufacturing same
WO2015072067A1 (fr) * 2013-11-13 2015-05-21 パナソニックＩｐマネジメント株式会社 Dispositif électroluminescent
US9515239B2 (en) 2014-02-28 2016-12-06 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device and light-emitting apparatus
US9618697B2 (en) 2014-02-28 2017-04-11 Panasonic Intellectual Property Management Co., Ltd. Light directional angle control for light-emitting device and light-emitting apparatus
US9518215B2 (en) 2014-02-28 2016-12-13 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device and light-emitting apparatus
US9890912B2 (en) 2014-02-28 2018-02-13 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus including photoluminescent layer
US9880336B2 (en) 2014-02-28 2018-01-30 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device including photoluminescent layer
US10012780B2 (en) 2014-02-28 2018-07-03 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device including photoluminescent layer
US10031276B2 (en) 2015-03-13 2018-07-24 Panasonic Intellectual Property Management Co., Ltd. Display apparatus including photoluminescent layer
US10113712B2 (en) 2015-03-13 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device including photoluminescent layer
US10182702B2 (en) 2015-03-13 2019-01-22 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus including photoluminescent layer
USRE49093E1 (en) 2015-03-13 2022-06-07 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus including photoluminescent layer
US9899577B2 (en) 2015-06-08 2018-02-20 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus including photoluminescent layer
US10115874B2 (en) 2015-06-08 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device including photoluminescent layer
US9882100B2 (en) 2015-08-20 2018-01-30 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device having surface structure for limiting directional angle of light
US10359155B2 (en) 2015-08-20 2019-07-23 Panasonic Intellectual Property Management Co., Ltd. Light-emitting apparatus
US10094522B2 (en) 2016-03-30 2018-10-09 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device having photoluminescent layer
WO2017187386A1 (fr) * 2016-04-29 2017-11-02 Sabic Global Technologies B.V. Substrat d'extraction et son procédé de fabrication
JP2016194697A (ja) * 2016-05-10 2016-11-17 ウシオ電機株式会社 蛍光光源装置
US11649188B2 (en) 2017-08-18 2023-05-16 Corning Incorporated Coated cover substrates and electronic devices including the same
WO2019036702A1 (fr) * 2017-08-18 2019-02-21 Corning Incorporated Substrats revêtus de couverture et dispositifs électroniques les comprenant
CN111051931B (zh) * 2017-08-18 2022-05-13 康宁股份有限公司 经涂覆的覆盖基材以及包含其的电子装置
CN111051931A (zh) * 2017-08-18 2020-04-21 康宁股份有限公司 经涂覆的覆盖基材以及包含其的电子装置
EP3480516A1 (fr) * 2017-11-03 2019-05-08 LG Electronics Inc. Module de phosphore
US11067242B2 (en) 2017-11-03 2021-07-20 Lg Electronics Inc. Phosphor module
CN109751564B (zh) * 2017-11-03 2021-11-19 Lg电子株式会社 荧光体模块
US10670211B2 (en) 2017-11-03 2020-06-02 Lg Electronics Inc. Phosphor module
CN109751564A (zh) * 2017-11-03 2019-05-14 Lg电子株式会社 荧光体模块
EP3480517A1 (fr) * 2017-11-03 2019-05-08 LG Electronics Inc. Module de phosphore
CN113380842A (zh) * 2020-03-10 2021-09-10 夏普福山半导体株式会社 图像显示元件

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