WO2013111696A1 - Substrat de matériau fluorescent, appareil d'affichage et appareil électronique - Google Patents

Substrat de matériau fluorescent, appareil d'affichage et appareil électronique Download PDF

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Publication number
WO2013111696A1
WO2013111696A1 PCT/JP2013/051066 JP2013051066W WO2013111696A1 WO 2013111696 A1 WO2013111696 A1 WO 2013111696A1 JP 2013051066 W JP2013051066 W JP 2013051066W WO 2013111696 A1 WO2013111696 A1 WO 2013111696A1
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Prior art keywords
light
substrate
layer
phosphor
partition wall
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PCT/JP2013/051066
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English (en)
Japanese (ja)
Inventor
晶子 岩田
充浩 向殿
近藤　克己
悦昌 藤田
勇毅 小林
別所　久徳
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シャープ株式会社
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Publication of WO2013111696A1 publication Critical patent/WO2013111696A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight

Definitions

  • the present invention relates to a phosphor substrate, a display device, and an electronic device.
  • Patent Documents 1 and 2 as a method for improving viewing angle characteristics in a liquid crystal display device, a phosphor layer is disposed on the front surface of the liquid crystal display device, and a blue light emitted from a light source is obtained.
  • a method is disclosed in which a part is used for blue display and the remaining part is converted into red light and green light with a phosphor to perform full color display.
  • the organic EL display has display characteristics excellent in contrast, viewing angle, and response speed.
  • the organic EL display has a problem that it is difficult to achieve high definition and large size because it is necessary to pattern light emitting layers of RGB colors using mask vapor deposition in order to realize full color display.
  • Patent Documents 3 and 4 disclose a method of emitting phosphor layers of RGB colors using a monochromatic organic EL element as an excitation light source.
  • JP 2000-131683 A Japanese Patent Laid-Open No. 62-194227 Japanese Patent Laid-Open No. 3-152897 JP 2010-282916 A
  • the present invention has been made to solve the above-described problem, and is a phosphor substrate, a display device, and an electronic device that can suppress excitation light from being incident on an adjacent pixel of a pixel that should be incident.
  • the purpose is to provide.
  • Another object of the present invention is to provide a phosphor substrate, a display device, and an electronic apparatus that can suppress undesired phosphor layers from emitting light and causing color bleeding.
  • a phosphor substrate of the present invention includes a substrate, a phosphor layer that is provided on the substrate and emits fluorescence by incident excitation light, and a partition wall that surrounds the side surface of the phosphor layer.
  • the shape of at least the side away from the substrate of the partition wall is such that the cross-sectional area when cut along a plane parallel to one surface of the substrate is small on the side away from the substrate and gradually toward the substrate. It is characterized by a large shape.
  • the phosphor substrate of the present invention is characterized in that the partition wall has light scattering property or light reflecting property.
  • the partition includes a light scattering layer having a light scattering property, and a light absorbing layer having a light absorption property disposed between the substrate and the light scattering layer,
  • the portion of the light absorbing layer on the substrate side has a larger cross-sectional area when cut along a plane parallel to one surface of the substrate than a cross-sectional area when the light scattering layer is cut along a plane parallel to one surface of the substrate. It is characterized by that.
  • the phosphor substrate according to the present invention is characterized in that at least a portion of the light scattering layer in contact with the phosphor layer is formed of a material containing a resin and light scattering particles.
  • the phosphor substrate of the present invention is characterized in that at least a portion of the light scattering layer in contact with the phosphor layer is white.
  • the phosphor substrate of the present invention is characterized in that at least a portion of the light scattering layer in contact with the phosphor layer has an uneven shape.
  • the shape of at least the side surface of the partition wall on the side away from the substrate is a curved shape having a concave cross-sectional shape when cut along a plane orthogonal to one surface of the substrate.
  • the shape of at least a side surface of the partition wall on the side away from the substrate is a curved shape in which a cross-sectional shape is convex when cut along a plane orthogonal to one surface of the substrate.
  • the phosphor substrate of the present invention is characterized in that a low refractive index layer having a refractive index lower than that of the substrate is provided between the substrate and the phosphor layer.
  • the phosphor substrate of the present invention transmits light from the blue region to the incident side of the excitation light of the phosphor layer and transmits light from green to the near infrared region.
  • a reflective band-pass filter is provided.
  • the phosphor substrate of the present invention transmits light in the ultraviolet region to the incident side of the excitation light of the phosphor layer, and transmits light from green to the near infrared region.
  • a reflective band-pass filter is provided.
  • the display device of the present invention includes the phosphor substrate of the present invention, and a light source that emits excitation light that irradiates the phosphor layer.
  • the display device of the present invention includes a plurality of pixels including at least a red sub-pixel that performs display with red light, a green sub-pixel that performs display with green light, and a blue sub-pixel that performs display with blue light.
  • Blue light as the excitation light is emitted from the light source, and as the phosphor layer, a red phosphor layer that emits red light using the blue light as the excitation light is provided in the red sub-pixel, and the green sub-pixel is provided in the green sub-pixel.
  • a green phosphor layer that emits green light using the blue light as the excitation light is provided, and a scattering layer that scatters the blue light is provided in the blue sub-pixel.
  • the display device of the present invention emits blue light as the excitation light from the light source, transmits light in a blue region between the light source and the phosphor substrate, and transmits light from green to the near infrared region.
  • a reflective band-pass filter is provided.
  • the display device of the present invention includes a plurality of pixels including at least a red sub-pixel that performs display with red light, a green sub-pixel that performs display with green light, and a blue sub-pixel that performs display with blue light.
  • Ultraviolet light as the excitation light is emitted from the light source, and as the phosphor layer, a red phosphor layer that emits red light using the ultraviolet light as the excitation light is provided in the red subpixel, and the green subpixel is provided with A green phosphor layer that emits green light using the ultraviolet light as the excitation light is provided, and a blue phosphor layer that emits blue light using the ultraviolet light as the excitation light is provided in the blue sub-pixel.
  • the display device of the present invention emits ultraviolet light as the excitation light from the light source, transmits light in the ultraviolet region between the light source and the phosphor substrate, and transmits light from green to the near infrared region.
  • a reflective band-pass filter is provided.
  • the light source includes an active matrix driving system including a plurality of light emitting elements provided corresponding to the plurality of pixels, and a plurality of driving elements that respectively drive the plurality of light emitting elements. It is characterized by being a light source.
  • the display device of the present invention is characterized in that the light source is any one of a light emitting diode, an organic electroluminescent element, and an inorganic electroluminescent element.
  • the light source is a planar light source that emits light from a light emitting surface, and is emitted from the planar light source for each pixel between the planar light source and the phosphor substrate.
  • a liquid crystal element capable of controlling the light transmittance is provided.
  • the display device of the present invention is characterized in that the light source has directivity.
  • the display device of the present invention is characterized in that a polarizing plate having an extinction ratio of 10,000 or more at a wavelength of 435 nm or more and 480 nm or less is provided between the light source and the phosphor substrate.
  • the display device of the present invention is characterized in that a color filter is provided on either the upper surface or the lower surface of the phosphor layer.
  • the phosphor layer in the region surrounded by the partition wall has a concave shape when cut along a plane orthogonal to one surface of the substrate, and at least a peripheral portion is a side surface of the partition wall. It is arrange
  • An electronic apparatus includes the display device according to the present invention.
  • a phosphor substrate, a display device, and an electronic device that can suppress excitation light from being incident on a pixel adjacent to a pixel that should originally be incident.
  • a phosphor substrate, a display device, and an electronic device that can suppress undesired phosphor layers from emitting light and causing color bleeding.
  • action of a partition It is a cross-sectional schematic diagram of the display apparatus of 5th Embodiment of this invention. It is a cross-sectional schematic diagram of the display apparatus of 6th Embodiment of this invention. It is a cross-sectional schematic diagram which shows the modification of the partition in the fluorescent substance substrate of this invention. It is a cross-sectional schematic diagram which shows the modification of the partition in the fluorescent substance substrate of this invention. It is a cross-sectional schematic diagram which shows the modification of the partition in the fluorescent substance substrate of this invention. It is a cross-sectional schematic diagram which shows the modification of the partition in the fluorescent substance substrate of this invention. It is a cross-sectional schematic diagram which shows the modification of the partition in the fluorescent substance substrate of this invention.
  • FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 1.
  • FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 1.
  • FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 1.
  • FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 1.
  • FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 1.
  • FIG. 3 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 1.
  • FIG. 3 is a schematic cross-sectional view of a display device of Example 1.
  • FIG. 6 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 2.
  • FIG. 6 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 2.
  • FIG. 6 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 2.
  • FIG. 6 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 2.
  • FIG. 6 is a schematic cross-sectional view showing a method for manufacturing the phosphor substrate of Example 2.
  • FIG. 6 is a schematic cross-sectional view of a display device of Example 2.
  • FIG. 6 is a schematic cross-sectional view showing
  • FIG. 1 is a schematic cross-sectional view of a display device 100 according to a first embodiment of the present invention.
  • the cross section of FIG. 1 is a cross section when the display device 100 is cut along a plane orthogonal to the upper surface of the substrate 1.
  • a schematic diagram of a cross section when the display device is cut along a plane orthogonal to the upper surface of the substrate 1 may be referred to as a cross sectional view of the display device.
  • the display device 100 includes a phosphor substrate 10 and a light source substrate 11 bonded to the phosphor substrate 10 via an adhesive layer 14.
  • one pixel which is the minimum unit constituting an image, is configured by three sub-pixels that respectively display red, green, and blue.
  • a sub pixel that performs red display is referred to as a red sub pixel PR
  • a sub pixel that performs green display is referred to as a green sub pixel PG
  • a sub pixel that performs blue display is referred to as a blue sub pixel PB.
  • the light source substrate 11 includes a substrate 9 and a light source 2 disposed on the phosphor substrate 10 side of the substrate 9.
  • ultraviolet light is emitted from the light source 2 as the excitation light L1.
  • red fluorescence L2 is produced in the red subpixel PR
  • green fluorescence L2 is produced in the green subpixel PG
  • blue fluorescence is produced in the blue subpixel PB.
  • Fluorescence L2 is generated. Then, full color display is performed by these three color lights of red, green and blue.
  • FIG. 2A and 2B are schematic views of the phosphor substrate 10 according to the first embodiment.
  • FIG. 2A is a schematic cross-sectional view of the phosphor substrate 10 according to the present embodiment.
  • FIG. 2B is a schematic plan view of the phosphor substrate 10 according to the present embodiment.
  • the cross section of FIG. 2A is a cross section when the phosphor substrate 10 is cut along a plane orthogonal to the upper surface of the substrate 1.
  • a schematic diagram of a cross section when the phosphor substrate is cut along a plane orthogonal to the upper surface of the substrate 1 may be referred to as a sectional view of the phosphor substrate.
  • the phosphor substrate 10 includes a substrate 1, phosphor layers 3R, 3G, and 3B, barrier ribs 5, and color filters 4R, 4G, and 4B. ing.
  • the phosphor layers 3R, 3G, and 3B are provided on the substrate 1 and generate fluorescence L2 by the excitation light L1 incident from above the substrate 1.
  • the barrier ribs 5 surround the side surfaces of the phosphor layers 3R, 3G, 3B.
  • the excitation light incident surface 3a on which the excitation light L1 of the phosphor layers 3R, 3G, 3B is incident is exposed from the opening of the partition wall 5. That is, the excitation light incident surface 3a is a surface on which the excitation light L1 emitted from the light source 2 of the light source 2 can enter.
  • the excitation light L1 is converted into fluorescence L2 in the phosphor layers 3R, 3G, 3B, and the fluorescence L2 is emitted from the emission surface 3b of the phosphor layers 3R, 3G, 3B.
  • the phosphor layers 3R, 3G, and 3B are composed of a plurality of phosphor layers that are divided for each sub-pixel, and the plurality of phosphor layers 3R, 3G, and 3B emit different color lights depending on the sub-pixels. Consists of body materials. The phosphor materials constituting the plurality of phosphor layers 3R, 3G, 3B may have different refractive indexes.
  • a wavelength selective transmission / reflection member that transmits the excitation light L1 and reflects the fluorescence L2 emitted from the phosphor layers 3R, 3G, and 3B to the outer surface side of the excitation light incident surface 3a of the phosphor layers 3R, 3G, and 3B.
  • a pass filter may be formed. Note that “transmitting excitation light” means transmitting at least light corresponding to the peak wavelength of excitation light. Further, “reflect the fluorescence generated in the phosphor layers 3R, 3G, 3B” means that at least the light corresponding to the respective emission peak wavelengths from the phosphor layers 3R, 3G, 3B is reflected.
  • the partition wall 5 has a laminated structure of a light absorbing layer 6 having a light absorbing property and a light scattering layer 7 having a light scattering property from the substrate 1 side.
  • the cross-sectional shape of the light absorption layer 6 has a trapezoidal shape in which the side (bottom base) on the side in contact with the substrate 1 is longer than the side (upper base) on the side away from the substrate 1.
  • the cross-sectional shape of the light scattering layer 7 is a trapezoidal shape in which the side (lower base) on the side in contact with the light absorption layer 6 is longer than the side (upper base) on the side away from the light absorption layer 6.
  • the cross-sectional shape of the partition wall 5 is a cross-sectional shape when the partition wall 5 (light absorption layer 6 and light scattering layer 7) is cut along a plane orthogonal to the upper surface of the substrate 1. It is.
  • the cross-sectional shape when the partition wall (light absorption layer, light scattering layer) is cut along a plane orthogonal to the upper surface of the substrate 1 may be referred to as a side cross-sectional shape of the partition wall (light absorption layer, light scattering layer).
  • a light absorption layer 6 is provided on the lower surface of the light scattering layer 7 (between the substrate 1 and the light scattering layer 7).
  • the side of the light scattering layer 7 that is in contact with the light absorption layer 6 (lower base) is shorter than the side of the light absorption layer 6 that is away from the substrate 1 (upper bottom).
  • the width of the light absorption layer 6 is larger than the width of the light scattering layer 7.
  • the thickness of the light absorption layer 6 is thinner than the thickness of the light scattering layer 7.
  • the thickness of the light absorption layer 6 is about 0.01 ⁇ m to 3 ⁇ m.
  • the area of the portion of the light absorption layer 6 on the side in contact with the substrate 1 is larger than the area of the light scattering layer 7.
  • the areas of the light absorption layer 6 and the light scattering layer 7 are cross-sectional areas when the light absorption layer 6 and the light scattering layer 7 are cut along a plane parallel to the upper surface of the substrate 1.
  • a cross-sectional area when the light absorption layer 6 and the light scattering layer 7 are cut along a plane parallel to the upper surface of the substrate 1 may be referred to as a plane cross-sectional area of the light absorption layer and the light scattering layer.
  • the partition wall 5 has a tapered shape such that the opening on the side away from the substrate 1 is wider than the opening on the side in contact with the substrate 1.
  • the ratio of the height of the partition wall 5 (aspect ratio) to the width of the end of the partition wall 5 on the substrate 1 side is desirably 10 or less.
  • the barrier ribs 5 may be formed of a material that reflects the fluorescence generated in the phosphor layer 3. Thereby, the fluorescence component which escapes from the phosphor layer 3 to the side can be reflected. Moreover, the structure by which the surface of the partition 5 was covered with the reflective material may be sufficient. Examples of such a reflective material include reflective metals such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys.
  • various shapes surrounding the phosphor layers 3R, 3G, 3B such as a lattice shape and a stripe shape, can be adopted.
  • a red color filter 4R is provided between the substrate 1 and the red phosphor layer 3R.
  • a green color filter 4G is provided between the substrate 1 and the green phosphor layer 3G.
  • a blue color filter 4B is provided between the substrate 1 and the blue phosphor layer 3B.
  • the film thickness of the light absorption layer 6 and the color filter 4 it is desirable that the film thickness of the color filter 4 is thicker than the film thickness of the light absorption layer 6.
  • the side surface of the phosphor layer 3 and the light absorption layer 6 are in contact with each other. This is because light emitted from the phosphor layer 3 is absorbed by the light absorption layer 6 and the light extraction efficiency is reduced.
  • FIG. 3A and 3B are schematic views for explaining the operation of the partition wall 5 of the display device 100 according to the first embodiment.
  • FIG. 3A is a cross-sectional view showing a conventional phosphor substrate 10X
  • FIG. 3B is a cross-sectional view showing the phosphor substrate 10 according to the present embodiment.
  • 3A and 3B, the light absorption layer and the color filter are not shown for convenience.
  • the excitation light L1 if the directivity of the excitation light L1 is insufficient and the distance between the light source (not shown) and the phosphor substrate is large, the excitation light L emitted from the light source. Is incident on the phosphor substrate with a certain extent.
  • a partition wall 5X having a rectangular side cross-sectional shape is formed around the phosphor layer 3X. Therefore, a part of the excitation light L1 emitted from the light source and transmitted through the bandpass filter 12X is incident on a desired pixel, but the remaining part is reflected on the upper surface of the partition wall 5X. A part of the excitation light L1 reflected by the upper surface of the partition wall 5X is reflected by the band pass filter 12X and enters a pixel adjacent to a desired pixel. Therefore, desired color light cannot be extracted.
  • the partition wall 5 has a side cross-sectional shape of the substrate 1, and the side (lower bottom) on the side in contact with the substrate 1 is away from the substrate 1. It has a trapezoidal shape longer than the side (upper base). For this reason, a part of the excitation light L1 emitted from the light source and transmitted through the bandpass filter 12X is directly incident on a desired pixel. On the other hand, the remaining part is reflected by the side surface of the partition wall 5 and enters a desired pixel.
  • the excitation light L1 is reflected toward the side opposite to the substrate 1X, whereas in the phosphor substrate 10 of the present embodiment, a part of the excitation light L1 is reflected on the substrate 1. Reflect toward you. That is, when the size of the portion of the partition wall 5 that is away from the substrate 1 (the area of the upper surface of the substrate 1) is small as in the phosphor substrate 10 of this embodiment, the side of the partition wall 5X that is away from the substrate 1X. Compared with the case where the size of the portion (the area of the upper surface of the substrate 1X) is large, the excitation light L1 emitted from the light source is suppressed from entering the adjacent pixel of the desired pixel.
  • the excitation light L1 emitted from the light source can be incident on the desired phosphor layer with minimal loss. Therefore, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer.
  • the partition wall 5 has a laminated structure of the light absorption layer 6 and the light scattering layer 7 from the substrate 1 side, the area of the light absorption layer 6 is relatively wide. Can take. Therefore, reflection of external light can be suppressed and contrast can be improved.
  • the structural member and the formation method of the fluorescent substance substrate 10 concerning this embodiment are explained concretely, the structural member and the formation method of the fluorescent substance substrate 10 are not limited to this.
  • the substrate 1 for the phosphor substrate 10 used in the present embodiment needs to take out the fluorescence L2 from the phosphor layers 3R, 3G, 3B to the outside, in the emission region of the phosphor layers 3R, 3G, 3B. It is necessary to transmit the fluorescence L2. Therefore, as the substrate 1 for the phosphor substrate 10, for example, an inorganic material substrate made of glass, quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like can be used. However, the substrate 1 for the phosphor substrate 10 is not limited to these substrates.
  • the phosphor layers 3R, 3G, and 3B of the present embodiment absorb excitation light L1 from the light source 2 such as an ultraviolet light emitting organic EL element, a blue light emitting organic EL element, an ultraviolet light emitting LED, and a blue LED, and are red, green, and blue. It comprises a red phosphor layer 3R, a green phosphor layer 3G, and a blue phosphor layer 3B. However, when blue light emission is applied as the light source 2, the blue phosphor layer 3B is not provided, and the blue excitation light L1 may be emitted from the blue subpixel PB.
  • the blue phosphor layer 3B is not provided, and the directional excitation light L1 is scattered so that it can be taken out as isotropic light emission.
  • a simple light scattering layer may be applied.
  • a phosphor layer that emits cyan light and yellow light to the pixels as necessary.
  • the color reproduction range can be further expanded as compared with a display device using pixels that emit three primary colors of red, green, and blue.
  • the phosphor layers 3R, 3G, and 3B may be composed of only the phosphor materials exemplified below, and may optionally contain additives and the like, and these materials are polymer materials (binding resins). Or the structure disperse
  • a known phosphor material can be used as the phosphor material of the present embodiment.
  • Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials, and specific examples of these compounds are shown below, but the phosphor materials are not limited to these materials. . Moreover, you may use combining these several fluorescent material.
  • Organic phosphor materials include blue fluorescent dyes, stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene, coumarin dyes: 7-hydroxy- 4-methylcoumarin and the like can be mentioned.
  • a green fluorescent dye a coumarin dye: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153), 3- ( 2'-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2'-benzoimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), naphthalimide dyes: basic yellow 51, solvent yellow 11, Solvent yellow 116 etc. are mentioned.
  • the red fluorescent dye includes cyanine dye: 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, pyridine dye: 1-ethyl-2- [4- ( p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate, and rhodamine dyes: rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101 and the like. .
  • blue phosphors such as Sr 2 P 2 O 7 : Sn 4+ , Sr 4 Al 14 O 25 : Eu 2+ , BaMgAl 10 O 17 : Eu 2+ , SrGa 2 S 4 are used.
  • Y 2 O 2 S Eu 3+ , YAlO 3 : Eu 3+ , Ca 2 Y 2 (SiO 4 ) 6 : Eu 3+ , LiY 9 (SiO 4 ) 6 O 2 : Eu 3+ , YVO 4 : Eu 3+ , CaS: Eu 3+ , Gd 2 O 3 : Eu 3+ , Gd 2 O 2 S: Eu 3+ , Y (P, V) O 4 : Eu 3+ , Mg 4 GeO 5.5 F: Mn 4+ , Mg 4 GeO 6 : Mn 4+ , K 5 Eu 2.5 (WO 4 ) 6.25 , Na 5 Eu 2.5 (WO 4 ) 6.25 , K 5 Eu 2.5 (MoO 4 ) 6.25 , Na 5 Eu 2.5 (MoO 4 ) 6.25 and the like.
  • the inorganic phosphor may be subjected to a surface modification treatment as necessary.
  • a surface modification treatment physical treatment by chemical treatment such as a silane coupling agent or addition of fine particles of submicron order, etc. And the like due to the combined treatment thereof.
  • an inorganic material it is preferable to use an inorganic material.
  • the average particle diameter (d 50 ) is preferably 0.5 to 50 ⁇ m. When the average particle size is 1 ⁇ m or less, the luminous efficiency of the phosphor is drastically reduced. Moreover, when it is 50 ⁇ m or more, it becomes difficult to pattern at a high resolution.
  • the phosphor layer is formed by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, a discharge coating method, a spraying method.
  • Known wet processes such as coating methods such as coating methods, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, printing methods such as micro gravure coating methods, etc.
  • It can be formed by a known dry process such as a vapor deposition method, molecular beam epitaxy (MBE) method, sputtering method, organic vapor deposition (OVPD) method, or a laser transfer method.
  • the film thickness of the phosphor layer is usually about 100 nm to 100 ⁇ m, preferably 1 ⁇ m to 100 ⁇ m. If the film thickness is less than 100 nm, it is impossible to sufficiently absorb the excitation light from the light source, so that the light emission efficiency decreases, and the color purity deteriorates due to the mixture of the transmitted light of the excitation light with the required color. Problems arise. Further, in order to increase absorption of excitation light from the light source and reduce transmitted light of excitation light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 ⁇ m or more. Further, when the film thickness exceeds 100 ⁇ m, the excitation light from the light source is already sufficiently absorbed, so that the efficiency is not increased, the material is consumed only, and the material cost is increased.
  • the light scattering particles may be made of an organic material or an inorganic material, but may be made of an inorganic material. It is preferable. Thereby, the light having directivity from the light source 2 can be diffused or scattered more isotropically and effectively. Further, by using an inorganic material, it is possible to provide a light scattering layer that is stable to light and heat. Moreover, it is preferable that the light scattering particles have high transparency.
  • the light scattering particles are preferably particles in which fine particles having a higher refractive index than the base material are dispersed in a low refractive index base material.
  • the particle size of the light scattering particle is in the Mie scattering region, so the particle size of the light scattering particle is 100 nm to 500 nm. The degree is preferred.
  • the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples thereof include particles (fine particles).
  • particles (inorganic fine particles) made of an inorganic material for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), titanium oxide. Beads (refractive index anatase type: 2.50, rutile type: 2.70), zirconia bead (refractive index: 2.05), zinc oxide beads (refractive index: 2.00), barium titanate (BaTiO 3 ) (Refractive index: 2.4).
  • particles (organic fine particles) made of an organic material are used as the light scattering particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic- Styrene copolymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57), Styrene beads (refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), benzoguanamine-melamine formaldehyde beads (refractive index: 1.68), Examples thereof include silicone beads (refractive index: 1.50).
  • the resin material used by mixing with the above-described light scattering particles is preferably a translucent resin.
  • the resin material include acrylic resin (refractive index: 1.49), melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60).
  • Melamine beads (refractive index: 1.57), polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate ( Refractive index: 1.46), polyethylene (refractive index: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1) .53), high density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), poly (trifluoroethylene chloride) (refractive index: 1.42), polytetrafluoroethylene (refractive index) : .35), and the like.
  • Partition wall As a material for the partition, a black matrix or metal used as a partition for a conventional display can be used. In order to improve the light extraction efficiency to the emission side, a resin in a low refractive index resin is used. It is desirable to use a light-scattering partition wall made of a light-scattering material in which light-scattering particles having a higher refractive index are dispersed. More preferably, in order to achieve both high contrast and high light extraction efficiency, after forming a light absorption layer of about 0.01 ⁇ m to 3 ⁇ m on the substrate, the light absorption layer has a ground contact area smaller than the ground contact area to the substrate.
  • a light scattering layer having a thickness of about 1 ⁇ m to 100 ⁇ m is formed so as to be in contact with the absorption layer.
  • the film thickness of the light scattering layer is not sufficiently thicker than the film thickness of the light absorption layer, improvement in light extraction efficiency due to the light scattering effect cannot be expected.
  • the particle size of the light-scattering particles needs to be in the Mie scattering region.
  • About 500 nm is preferable.
  • the CIE 1976 L * a * b display system has a reflectance of 80% or more.
  • the resin for example, the resin materials listed in paragraph [0076] can be used.
  • the light scattering particles for example, the light scattering particles as listed in the paragraphs [0073], [0074], and [0075] can be used.
  • Examples of the method for forming the partition include a photolithography method, a screen printing method, a vapor deposition method, a sand blast method, and a transfer method.
  • Photolithography is used because a partition having a high definition and a high aspect ratio can be formed at a low cost. Formation by the method is desirable.
  • the partition wall material can be made into a negative photoresist, or instead of a photopolymerizable monomer or a photopolymerization initiator. It is possible to make a positive photoresist by adding a photosensitizer such as diazonaphthoquinone, and patterning can be performed by photolithography.
  • the vertical and horizontal sizes of the openings of the partition walls 5 are preferably about 20 ⁇ m ⁇ 20 ⁇ m to about 500 ⁇ m ⁇ 500 ⁇ m.
  • excitation light designed to enter a certain pixel further passes to adjacent pixels.
  • the light scattering layer 7 having a thickness of about 0.01 ⁇ m to 3 ⁇ m is formed on the side opposite to the light extraction direction of the light scattering layer 7 in order to absorb light entering the adjacent pixels.
  • a thin black layer may be inserted.
  • Providing liquid repellency to partition walls When the phosphor layer is patterned by a dispenser method, an ink jet method, or the like, it is essential to impart liquid repellency to the partition wall in order to prevent the phosphor solution from overflowing from the partition wall and mixing colors between adjacent pixels.
  • a method for imparting liquid repellency to the partition include the following methods.
  • (1) Fluorine plasma treatment For example, as disclosed in Japanese Patent Application Laid-Open No. 2000-76979, a plasma treatment is performed on a substrate on which a partition wall is formed under a condition in which an introduced gas is a fluorine-based gas. Liquidity can be imparted.
  • a liquid repellency can be imparted to the partition walls by adding a fluorinated surface modifier to the light scattering partition material.
  • a fluorinated surface modifier for example, a UV curable surface modifier Defenser (manufactured by DIC Corporation), Mega Fuck, or the like can be used.
  • Color filter In the phosphor substrate 10 of the present embodiment, a conventional color filter can be used as the color filter provided between the substrate 1 on the light extraction side and the phosphor layers 3R, 3G, 3B.
  • the color filter by providing the color filter, the color purity of the red subpixel PR, the green subpixel PG, and the blue subpixel PB can be increased, and the color reproduction range of the display device 100 can be expanded.
  • the red color filter 4R facing the red phosphor layer 3R absorbs excitation light that excites the red phosphor layer 3R of external light. For this reason, it becomes possible to reduce and prevent light emission of the red phosphor layer 3R due to external light, and it is possible to reduce and prevent a decrease in contrast. Further, the red color filter 4R can prevent the excitation light L1 that is not absorbed and transmitted by the red phosphor layer 3R from leaking outside. For this reason, it is possible to prevent a decrease in the color purity of the light emission due to the color mixture by the light emission from the red phosphor layer 3R and the excitation light L1.
  • the green color filter 4G facing the green phosphor layer 3G absorbs excitation light that excites the green phosphor layer 3G of external light. For this reason, it becomes possible to reduce and prevent light emission of the green phosphor layer 3G due to external light, and it is possible to reduce and prevent a decrease in contrast. Further, the green color filter 4G can prevent the excitation light L1 that is not absorbed and transmitted by the green phosphor layer 3G from leaking outside. For this reason, it is possible to prevent a decrease in the color purity of the light emission due to the color mixture by the light emission from the green phosphor layer 3G and the excitation light L1.
  • the blue color filter 4B facing the blue phosphor layer 3B absorbs excitation light that excites the blue phosphor layer 3B of external light. For this reason, it becomes possible to reduce and prevent light emission of the blue phosphor layer 3B due to external light, and it is possible to reduce and prevent a decrease in contrast. Further, the blue color filter 4B can prevent the excitation light L1 that is not absorbed and transmitted by the blue phosphor layer 3B from leaking outside. For this reason, it is possible to prevent a decrease in the color purity of the light emission due to the color mixture by the light emission from the blue phosphor layer 3B and the excitation light L1.
  • FIG. 4 is a cross-sectional view of the phosphor substrate 10A of the second embodiment.
  • the basic structure of the phosphor substrate 10A of the present embodiment is the same as that of the first embodiment, and only the shapes of the phosphor layers 3RA, 3GA, 3BA provided in the region surrounded by the partition walls 5 are different from those of the first embodiment. .
  • the same components as those in FIG. 2A of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the side sectional shape of the phosphor layers 3RA, 3GA, 3BA in the region surrounded by the partition walls 5 is a concave shape, and the phosphor layers 3RA, 3GA, A peripheral portion of 3BA is arranged along the side surface of the partition wall 5.
  • the phosphor layers 3RA, 3GA, 3BA have a flat upper surface at the center of the phosphor layers 3RA, 3GA, 3BA.
  • the height of the upper surface of the central part of the phosphor layers 3RA, 3GA, 3BA is approximately half the height of the partition wall 5.
  • the height of the peripheral part of the phosphor layers 3RA, 3GA, 3BA is substantially the same as the height of the partition walls 5.
  • the excitation light traveling from the light source toward the pixel is prevented from being absorbed by the partition wall 5 or transmitted through the partition wall 5. Therefore, the light extraction efficiency can be improved.
  • FIG. 5 is a cross-sectional view of the phosphor substrate 10B of the third embodiment.
  • the basic configuration of the phosphor substrate 10B of the present embodiment is the same as that of the second embodiment, and is different from the second embodiment in that a low refractive index layer 16 having a refractive index lower than that of the substrate 1 is provided.
  • symbol is attached
  • the low refractive index layer 16 is formed between the phosphor layer 3RA and the color filter 4R, between the phosphor layer 3GA and the color filter 4G, They are respectively provided between the layer 3BA and the color filter 4B.
  • the low refractive index layer 16 is a layer having a property of reducing the incident angle of the fluorescence incident on the color filters 4R, 4G, and 4B out of the fluorescence emitted isotropically from the phosphor layers 3RA, 3GA, and 3BA.
  • the low refractive index layer 16 is not limited to being disposed between the phosphor layer 3 and the color filter 4, and may be disposed between the color filter 4 and the substrate 1. In other words, the low refractive index layer 16 may be disposed between the phosphor layer and the substrate 1.
  • the refractive index of the low refractive index layer 16 is such that the outgoing angle (refractive angle) of incident light that passes through the low refractive index layer 16 and enters the substrate 1 from the color filter 4 is at least that of incident light that can be emitted from the substrate to the outside. It is preferable that the value be smaller than the critical angle.
  • the fluorescence emitted isotropically from the phosphor layers 3RA, 3GA, 3BA is transmitted through the low refractive index layer 16, so that the light incident on the substrate 1 can be reliably taken out to the outside, which is very efficient. It becomes possible to take out fluorescence outside.
  • the refractive index of the low refractive index layer 16 is preferably in the range of 1.0 to 1.4.
  • the refractive index of the low refractive index layer 16 is larger than 1.4, the refractive index difference between the substrate 1 and the low refractive index layer 16 is reduced, and most of the light incident on the substrate 1 from the low refractive index layer 16 is The light is reflected at the interface between the substrate 1 and the outside and cannot be taken out to the outside.
  • the light-emitting device has a plurality of phosphor layers divided into predetermined regions, light reflected at the interface between the substrate and the outside enters at least two adjacent phosphor layers, and display blur or There is a concern about blurring.
  • the material of the low refractive index layer 16 include a fluororesin having a refractive index of about 1.35 to 1.4, a silica airgel having a refractive index of about 1.003 to 1.3, and a refractive index of about 1.2 to 1.3.
  • the present embodiment is not limited to these materials. A combination of the above materials may be used.
  • the film thickness of the low refractive index layer 16 is preferably in the range of 10 nm to 50 ⁇ m.
  • the film thickness of the low refractive index layer 16 is greater than 50 ⁇ m, in particular, light incident on the low refractive index layer 16 in an oblique direction from the phosphor layers 3RA, 3GA, 3BA is interfaced between the low refractive index layer 16 and the substrate 1.
  • the distance traveled in the horizontal direction (direction perpendicular to the thickness direction of the substrate 1) with respect to the substrate 1 becomes longer.
  • the fluorescent light emission region extracted from the substrate 1 to the outside is enlarged relative to the light emission region of the phosphor layer itself, which is not preferable particularly for a display device or the like for high definition.
  • the low refractive index layer 16 is more preferably a thin film.
  • the low refractive index layer 16 is preferably made of a gas. As described above, it is desirable that the refractive index of the low refractive index layer 16 is as low as possible. However, when the low refractive index layer 16 is formed of a material such as a solid, liquid, or gel, U.S. Pat. No. 4,402,827, No. 4,279,971, As described in JP-A-2001-202827 and the like, the lower limit of the refractive index is about 1.003. On the other hand, if the low refractive index layer 16 is a gas layer made of a gas such as air or nitrogen, for example, the refractive index can be set to 1.0, and from the phosphor layers 3RA, 3GA, 3BA. Isotropically emitted fluorescence is transmitted through the gas layer (low refractive index layer), so that the light incident on the substrate can be reliably extracted to the outside, and the fluorescence can be extracted to the outside very efficiently. It becomes possible.
  • FIG. 6 is a cross-sectional view of a display device 100C according to the fourth embodiment.
  • the basic configuration of the display device 100C of the present embodiment is the same as that of the first embodiment, and only the configuration of the partition walls 5C is different from that of the first embodiment. Therefore, in the present embodiment, description of the basic configuration of the display device 100C is omitted, and only the partition 5C is described.
  • the portions of the partition walls 5 that are in contact with the phosphor layers 3R, 3G, 3B are flat surfaces.
  • portions of the partition 5C that are in contact with the phosphor layers 3R, 3G, and 3B (side surfaces of the partition 5C) are uneven.
  • Other configurations are the same as those of the first embodiment.
  • the entire surface of the partition wall 5C (the upper surface of the partition wall 5C in addition to the side surface of the partition wall 5C) may be uneven. That is, it is only necessary that at least portions of the partition walls 5C that are in contact with the phosphor layers 3R, 3G, and 3B have an uneven shape.
  • FIG. 7 is a schematic diagram for explaining the operation of the partition wall 5C of the display device 100C according to the fourth embodiment.
  • the fluorescence L2 generated in the phosphor layer 3 is scattered by the uneven shape of the portion in contact with the partition wall 5C, and the fluorescence L2 is Difficult to be absorbed by the partition 5C. For this reason, the loss of the fluorescence L2 due to the fluorescence L2 generated in the phosphor layer 3 being absorbed by the partition walls 5C can be reduced, and the fluorescence L2 can be sufficiently extracted outside.
  • the partition wall 5C may be white. Specifically, the partition wall 5C may be formed including a white resist. In addition, the whole partition 5C may be formed including a white resist, or only portions of the partition 5C that are in contact with the phosphor layers 3R, 3G, and 3B may be formed including a white resist. That is, it is only necessary that at least portions of the partition walls 5C that are in contact with the phosphor layers 3R, 3G, and 3B are white. Thereby, compared with the case where a partition is black, fluorescence can be made hard to be absorbed by the partition 5C.
  • FIG. 8 is a cross-sectional view of a display device 100D of the fifth embodiment.
  • the basic configuration of the display device 100D of the present embodiment is the same as that of the first embodiment, and only the configuration of the partition wall 5D is different from that of the first embodiment. Therefore, in the present embodiment, the description of the basic configuration of the display device 100D is omitted, and only the partition wall 5D is described.
  • the black layer 8 is provided on the upper surface of the light scattering layer 7. Thereby, since a part of the excitation light emitted from the light source 2 is absorbed by the black layer 8, light leakage to adjacent pixels can be suppressed and color mixing can be avoided.
  • the thickness of the black layer 8 is thinner than the thickness of the light scattering layer 7. For example, the thickness of the black layer 8 is about 0.01 ⁇ m to 3 ⁇ m. Further, the width of the black layer 8 is equal to the width of the upper surface of the light scattering layer 7.
  • the black layer 8 is provided on the upper surface of the light scattering layer 7 and the light absorption layer 6 is provided on the lower surface of the light scattering layer 7.
  • the present invention is not limited to this.
  • the black layer 8 may be provided only on the upper surface of the light scattering layer 7, and the light absorption layer 6 may not be provided on the lower surface of the light scattering layer 7.
  • FIG. 9 is a cross-sectional view of a display device 100E according to the sixth embodiment.
  • the basic configuration of the display device 100E of the present embodiment is the same as that of the fifth embodiment, and is different from the fifth embodiment in that the band pass filter 12 is provided on the upper surface of the planarization layer 13. Therefore, in this embodiment, the description of the basic configuration of the display device 100E is omitted.
  • a planarizing layer 13 is formed on the upper surface of each phosphor layer 3R, 3G, 3B of the phosphor substrate 10E.
  • a band pass filter 12 is provided on the upper surfaces of the planarizing layer 13 and the partition walls 5D.
  • the bandpass filter 12 When blue light is emitted as excitation light from the light source 2, the bandpass filter 12 transmits light in the blue region (light in the wavelength range of 435 to 480 nm) and transmits light from green to the near infrared region ( A function of reflecting light outside the wavelength range of the blue region.
  • the band-pass filter 12 is composed of a thin film such as gold or silver, or a dielectric multilayer film. Thereby, the blue light emitted from the light source 2 is transmitted through the band pass filter 12 and wavelength-converted by the phosphor layer 3 so that green light and red light can be emitted. Furthermore, since the bandpass filter 12 reflects the green light and red light toward the bandpass filter 12 again to the phosphor layer side, the green light and red light can be used efficiently.
  • the band pass filter 12 is provided on the upper surface of the planarizing layer 13, but the present invention is not limited to this.
  • the band pass filter 12 may be provided on the upper surface of each phosphor layer 3R, 3G, 3B formed in the opening of the partition wall 5 without providing the planarizing layer 13. That is, the band pass filter 12 only needs to be provided between the light source substrate 11 and the phosphor substrate 10.
  • the bandpass filter 12 transmits light in the ultraviolet region (light in the wavelength range of 360 to 410 nm) and emits light from green to the near infrared region. It may have a function of reflecting (light outside the wavelength range of the ultraviolet region). Thereby, the ultraviolet light emitted from the light source 2 is transmitted through the band-pass filter 12 and wavelength-converted by the phosphor layer 3 to emit green light or red light. Furthermore, since the bandpass filter 12 reflects the green light and red light toward the bandpass filter 12 again to the phosphor layer side, the green light and red light can be used efficiently.
  • FIG. 10A is a cross-sectional view showing a first modification of the partition wall.
  • the partition wall 5 has a laminated structure of the light absorption layer 6 and the light scattering layer 7 from the substrate 1 side.
  • the partition 15 of this modification has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10A.
  • the side cross-sectional shape of the partition wall 15 is a trapezoidal shape in which the side (lower bottom) on the side in contact with the substrate 1 is longer than the side (upper bottom) on the side away from the substrate 1.
  • FIG. 10B is a cross-sectional view showing a second modification of the partition wall.
  • the partition wall 15A of this modification also has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10B.
  • the side cross-sectional shape of the partition wall 15 ⁇ / b> A is a triangular shape having a base on the side in contact with the substrate 1.
  • the side cross-sectional shape of the partition wall 15A is an isosceles triangle shape in which the lengths of two sides adjacent to the bottom side are equal to each other.
  • the portion of the partition wall 15A on the side away from the substrate 1 is pointed, so that the substrate 1 of the partition wall 15A and the portion on the side of the partition wall 15A away from the substrate 1 are flat.
  • the opening on the far side becomes wider. Therefore, it can suppress more reliably that excitation light injects into the adjacent pixel of the pixel which should originally enter, and can fully suppress that the fluorescent substance layer which is not desired light-emits and color blurring arises.
  • FIG. 10C is a cross-sectional view showing a third modification of the partition wall.
  • the partition wall 15B of this modification also has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10C.
  • the area of the partition wall 15B is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the area of the partition wall 15B is a cross-sectional area when the partition wall 15B is cut along a plane parallel to the upper surface of the substrate 1.
  • the cross-sectional area when the partition wall is cut along a plane parallel to the upper surface of the substrate 1 may be referred to as a planar cross-sectional area of the partition wall.
  • the shape of the side surface of the partition wall 15B on the side away from the substrate 1 is a curved shape having a convex side cross-sectional shape. That is, the tip of the partition wall 15B is rounded.
  • the side cross-sectional shape is a triangular shape
  • the portion of the partition wall away from the substrate 1 is pointed. If the part of the partition wall on the side away from the substrate 1 is too sharp, a part having a lateral width locally smaller than the incident direction of the excitation light is generated in the part of the partition wall on the side away from the substrate 1. Therefore, when the excitation light is incident on the part of the partition wall that is away from the substrate 1, the excitation light is transmitted through the part of the partition wall that is away from the substrate 1 and is incident on the adjacent pixel of the pixel that should be incident. There are concerns.
  • the portion of the partition wall 15B on the side away from the substrate 1 is rounded and has a certain lateral width with respect to the incident direction of the excitation light. Therefore, even when the excitation light is incident on the part of the partition wall 15B on the side away from the substrate 1, the excitation light can be prevented from passing through the part of the partition wall on the side away from the substrate 1.
  • FIG. 10D is a cross-sectional view showing a fourth modification of the partition wall.
  • the partition wall 15C of this modification also has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10D.
  • the shape of the partition wall 15 ⁇ / b> C is such that the cross-sectional area is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the part of the partition wall 15C on the side away from the substrate 1 is pointed.
  • the shape of the side surface of the partition wall 15C is a curved shape having a concave side cross-sectional shape.
  • the side cross-sectional shape of the side wall of the partition wall 15C is a curved shape having a concave shape, so that excitation light is emitted from the opening of the partition wall 15C as compared to the curved shape having a convex side cross-sectional shape. It becomes easy to enter the back (substrate 1 side). Therefore, it can suppress more reliably that excitation light injects into the adjacent pixel of the pixel which should originally enter, and can fully suppress that the fluorescent substance layer which is not desired light-emits and color blurring arises.
  • FIG. 10E is a cross-sectional view showing a fifth modification of the partition wall.
  • the partition 15D of this modification also has a single-layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10E.
  • the shape of the side surface of the central portion in the height direction of the partition wall 15D is a curved shape in which the side cross-sectional shape is convex.
  • the shape above the central portion in the height direction of the partition wall 15D is such that the cross-sectional area is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the portion of the partition wall 15D on the side away from the substrate 1 is pointed.
  • the shape of the side surface above the central portion in the height direction of the partition wall 15D is a curved shape having a concave side cross-sectional shape.
  • FIG. 10F is a cross-sectional view illustrating a sixth modification of the partition wall.
  • the partition wall 15E of this modification also has a single-layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10F.
  • the shape of the partition wall 15 ⁇ / b> E is such that the cross-sectional area is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • a portion of the partition wall 15E on the side away from the substrate 1 is flat.
  • the shape of the side surface of the partition wall 15E is a curved shape having a concave side cross-sectional shape.
  • the side cross-sectional shape of the side wall of the partition wall 15E is a concave curved shape, so that excitation light is emitted from the opening of the partition wall 15E as compared to the curved shape of the side cross-sectional shape being convex. It becomes easy to enter the back (substrate 1 side). Therefore, it can suppress more reliably that excitation light injects into the adjacent pixel of the pixel which should originally enter, and can fully suppress that the fluorescent substance layer which is not desired light-emits and color blurring arises.
  • FIG. 10G is a cross-sectional view showing a seventh modification of the partition wall.
  • the partition wall 15F of this modification also has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10G.
  • the shape of the partition wall 15F is such that the cross-sectional area is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the shape of the side surface on the side away from the substrate 1 of the partition wall 15F is a curved shape having a convex side cross-sectional shape. That is, the tip of the partition wall 15F is rounded.
  • the shape of the partition wall 15 ⁇ / b> F is such that the cross-sectional area is substantially the same on the side near the substrate 1.
  • the portion of the partition wall 15F on the side away from the substrate 1 is rounded, and has a certain lateral width with respect to the incident direction of the excitation light. Therefore, even when the excitation light is incident on the part of the partition wall 15F on the side away from the substrate 1, the excitation light can be prevented from passing through the part of the partition wall 15F on the side away from the substrate 1.
  • FIG. 10H is a cross-sectional view illustrating an eighth modification of the partition wall.
  • the partition 15G of this modification also has a single-layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10H.
  • the partition wall 15G of this modification has a shape in which the inclination angle of the side surface of the partition wall 15G is changed halfway with respect to the side cross-sectional shape shown in FIG. 10B. Further, the shape of the partition wall 15G is such that the cross-sectional area is substantially the same on the side close to the substrate 1.
  • the portion of the partition wall 15G on the side away from the substrate 1 is pointed, so that the substrate 1 of the partition wall 15G and the partition 1 on the side away from the substrate 1 are flat as compared with the configuration in which the portion of the partition wall away from the substrate 1 is flat.
  • the opening on the far side becomes wider. Therefore, it can suppress more reliably that excitation light injects into the adjacent pixel of the pixel which should originally enter, and can fully suppress that the fluorescent substance layer which is not desired light-emits and color blurring arises.
  • FIG. 10I is a cross-sectional view showing a ninth modification of the partition wall.
  • the partition wall 15H of this modification also has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10I.
  • the partition wall 15H of this modification has a shape in which the inclination angle of the side surface of the partition wall 15H is changed in the middle with respect to the side cross-sectional shape shown in FIG. 10B.
  • the shape of the partition wall 15H is such that the plane cross-sectional area is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the shape of the partition wall 15H is such that the inclination angle of the side surface is gentle on the distal end side of the partition wall 15H, and the inclination angle of the side surface is steep on the proximal end side of the partition wall 15H.
  • the portion of the partition wall 15H on the side away from the substrate 1 is pointed, so that the substrate 1 of the partition wall 15H is different from the configuration in which the portion of the partition wall on the side away from the substrate 1 is flat.
  • the opening on the far side becomes wider. Therefore, it can suppress more reliably that excitation light injects into the adjacent pixel of the pixel which should originally enter, and can fully suppress that the fluorescent substance layer which is not desired light-emits and color blurring arises.
  • FIG. 10J is a cross-sectional view illustrating a tenth modification of the partition wall.
  • the partition 15I of this modification also has a single-layer structure of a light scattering layer (light reflection layer) as shown in FIG. 10J.
  • the shape of the partition wall 15I is such that the plane cross-sectional area is small on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the part of the partition 15I on the side away from the substrate 1 is pointed.
  • the shape of the side surface of the partition wall 15I is a curved shape having a convex side sectional shape.
  • the side cross-sectional shape of the side surface of the partition wall 15I is a curved shape, so Have a certain thickness. Therefore, even when the excitation light is incident on the portion of the partition wall 15I that is away from the substrate 1, the excitation light can be prevented from passing through the portion of the partition wall 15I that is away from the substrate 1.
  • FIG. 10K is a cross-sectional view showing an eleventh modification of the partition wall.
  • the partition wall 5 has a two-layered structure of the light absorption layer 6 and the light scattering layer 7 from the substrate 1 side.
  • the partition wall 15J according to the present modification has a three-layer structure including a light absorption layer 15Ja, a first light scattering layer 15Jb, and a second light scattering layer 15Jc.
  • the light-absorbing layer 15Ja has a trapezoidal shape in which the side cross-sectional side (bottom base) on the side in contact with the substrate 1 is longer than the side (top bottom) on the side away from the substrate 1.
  • the first light-scattering layer 15Jb has a trapezoidal shape in which the side cross-sectional side (lower base) on the side in contact with the light-absorbing layer 15Ja is longer than the side (upper base) on the side away from the light-absorbing layer 15Ja.
  • the second light scattering layer 15Jc has a trapezoidal shape in which the side cross-sectional shape of the side (lower base) on the side in contact with the first light scattering layer 15Jb is longer than the side (upper base) on the side away from the first light scattering layer 15Jb. It has become.
  • the side (lower base) of the first light scattering layer 15Jb in contact with the light absorption layer 15Ja is shorter than the side (upper bottom) of the light absorption layer 15Ja on the side away from the substrate 1.
  • the side (lower bottom) of the second light scattering layer 15Jc that is in contact with the first light scattering layer 15Jb is shorter than the side (upper bottom) of the first light scattering layer 15Jb that is away from the light absorption layer 15Ja.
  • the partition 15J has been described with reference to an example in which the barrier 15J has a three-layer structure of the light absorption layer 15Ja, the first light scattering layer 15Jb, and the second light scattering layer 15Jc.
  • the partition may have a laminated structure of four or more layers.
  • the first layer may be a light scattering layer.
  • all the layers constituting the laminated structure in the partition may be light scattering layers.
  • the shape of the partition wall is such that at least the shape of the partition wall on the side away from the substrate 1 has a smaller plane cross-sectional area on the side away from the substrate 1 and gradually increases toward the substrate 1.
  • the present invention is not limited to the shapes shown in the above embodiment and the above modified examples, and various shapes can be adopted.
  • FIG. 11A is a cross-sectional view showing a twelfth modification of the partition wall.
  • the partition wall 15K of the present modification has a single layer structure of a light scattering layer (light reflection layer).
  • the partition wall 15K of the present modification has a shape in which the plane cross-sectional area of the partition wall 15K changes in the middle.
  • the shape of the partition wall 15 ⁇ / b> K is such that the plane cross-sectional area is small at the portion on the side away from the substrate 1 and large at the portion on the side in contact with the substrate 1.
  • the shape of the partition wall 15K is a shape (a configuration including a shape perpendicular to the substrate 1) in which the cross-sectional area is substantially the same in each of the portion in contact with the substrate 1 and the portion away from the substrate 1. ing.
  • the side cross-sectional shape of the partition wall 15K is a rectangular shape in which the portion on the side away from the substrate 1 is smaller in width than the portion on the side in contact with the substrate 1, and thus the side cross-sectional shape of the partition wall Compared to the configuration (rectangular shape) in which the width of the portion on the side away from the substrate 1 and the portion on the side in contact with the substrate 1 are equal (rectangular shape), the opening on the side away from the substrate 1 of the partition wall 15K becomes wider. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11B is a cross-sectional view showing a thirteenth modification of the partition wall.
  • the partition 15L of this modification also has a single-layer structure of a light scattering layer (light reflection layer) as shown in FIG. 11B.
  • the partition wall 15L of this modification also has a shape in which the plane cross-sectional area of the partition wall 15L changes in the middle.
  • the shape of the partition wall 15 ⁇ / b> L is such that the plane cross-sectional area is small at the part away from the substrate 1 and large at the part in contact with the substrate 1.
  • the shape of the partition wall 15 ⁇ / b> L is a shape (a configuration including a shape perpendicular to the substrate 1) in which the plane cross-sectional area is substantially the same in the portion on the side away from the substrate 1.
  • the portion on the side in contact with the substrate 1 has a shape in which the plane cross-sectional area gradually decreases toward the substrate 1.
  • the side cross-sectional area of the partition wall 15L is smaller on the side away from the substrate 1 although the plane cross-sectional area gradually decreases toward the substrate 1 at the portion of the partition wall 15L on the side in contact with the substrate 1.
  • the width of the portion is smaller than that of the portion in contact with the substrate 1. Therefore, the partition wall 15L is separated from the substrate 1 in comparison with the configuration (rectangular shape) in which the side cross-sectional shape of the partition wall is the same width between the portion on the side away from the substrate 1 and the portion on the side in contact with the substrate 1
  • the opening on the side is widened. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11C is a cross-sectional view showing a fourteenth modification of the partition wall.
  • the partition wall 15M of this modification also has a single layer structure of a light scattering layer (light reflection layer) as shown in FIG. 11C.
  • the partition wall 15M of the present modification also has a shape in which the plane cross-sectional area of the partition wall 15M changes midway.
  • the shape of the partition wall 15 ⁇ / b> M is small in the portion on the side away from the substrate 1 and large in the portion on the side in contact with the substrate 1.
  • the shape of the partition wall 15 ⁇ / b> M is a shape (a configuration including a shape perpendicular to the substrate 1) in which the plane cross-sectional area is substantially the same in the portion in contact with the substrate 1.
  • the portion on the side away from the substrate 1 has a shape in which the plane cross-sectional area gradually decreases toward the substrate 1.
  • the side cross-sectional shape of the partition 15M is the side away from the substrate 1, although the flat cross-sectional area gradually decreases toward the substrate 1 at the portion of the partition 15L away from the substrate 1.
  • This portion has a smaller width than the portion in contact with the substrate 1.
  • the partition wall 15M is separated from the substrate 1 in comparison with the configuration (rectangular shape) in which the side cross-sectional shape of the partition wall is a shape in which the width of the portion on the side away from the substrate 1 and the portion on the side in contact with the substrate 1 are equal.
  • the opening on the side is widened. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11D is a cross-sectional view showing a fifteenth modification of the partition wall.
  • the partition wall 15N of this modification also has a single-layer structure of a light scattering layer (light reflection layer) as shown in FIG. 11D.
  • the partition wall 15N of this modification also has a shape in which the plane cross-sectional area of the partition wall 15N changes in the middle.
  • the shape of the partition wall 15N is small at the portion on the side away from the substrate 1 and large at the portion on the side in contact with the substrate 1.
  • the shape of the partition wall 15N is such that the cross-sectional area gradually decreases toward the substrate 1 in each of the portion on the side in contact with the substrate 1 and the portion on the side away from the substrate 1.
  • the cross-sectional area of the partition wall 15N is gradually reduced toward the substrate 1 in each of the portion on the side in contact with the substrate 1 and the portion on the side away from the substrate 1.
  • the opening on the side is widened. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11E is a cross-sectional view showing a sixteenth modification of the partition wall.
  • the partition wall 15O of this modification has a two-layer structure of a light absorption layer 15Oa and a light scattering layer 15Ob.
  • the partition wall 15O of this modification includes a light absorption layer 15Oa having a rectangular side cross-sectional shape and a light scattering layer 15Ob having a rectangular side cross-sectional shape smaller than the width of the light absorption layer 15Oa.
  • the side cross-sectional shape of the partition wall 15O is a rectangular shape having a smaller width than the light absorption layer 15Oa on the side where the light scattering layer 15Ob on the side away from the substrate 1 is in contact with the substrate 1.
  • the opening on the side away from the substrate 1 of the partition wall 15O is widened. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11F is a cross-sectional view showing a seventeenth modification of the partition wall. Also in the partition wall 15P of this modification, as shown in FIG. 11F, it has a two-layer laminated structure of a light absorption layer 15Pa and a light scattering layer 15Pb.
  • the light absorbing layer 15Pa has a trapezoidal shape in which the side cross-sectional shape is a side (lower bottom) on the side in contact with the substrate 1 shorter than the side (upper bottom) on the side away from the substrate 1.
  • the light scattering layer 15Pb has a rectangular shape in which the side cross-sectional side (lower side) on the side in contact with the light absorption layer 15Pa is shorter than the side (upper bottom) on the side away from the substrate 1 of the light absorption layer 15Pa.
  • the side cross-sectional shape of the partition wall 15P is that the light scattering layer 15Pb on the side away from the substrate 1 is the substrate. 1 has a smaller width than the light absorption layer 15Pa on the side in contact with 1.
  • substrate 1 is wide. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11G is a cross-sectional view showing an eighteenth modification of the partition wall.
  • the partition wall 15Q of the present modification also has a two-layer structure of a light absorption layer 15Qa and a light scattering layer 15Qb.
  • the light absorption layer 15Qa has a rectangular side cross-sectional shape.
  • the light scattering layer 15 ⁇ / b> Qb has a trapezoidal shape in which the side cross-section side (lower base) on the side in contact with the light absorption layer 15 ⁇ / b> Qa is shorter than the side (upper base) on the side away from the substrate 1.
  • the side cross-sectional shape is such that the side (lower bottom) on the side in contact with the light absorption layer 15Qa is shorter than the side (upper bottom) on the side away from the substrate 1 of the light absorption layer 15Qa.
  • the side cross-sectional shape of the partition wall 15Q is that the light scattering layer 15Qb on the side away from the substrate 1 is the substrate. 1, the width is smaller than that of the light absorption layer 15Qa on the side in contact with 1. For this reason, compared with the configuration (rectangular shape) in which the side cross-sectional shape of the partition wall has the same width between the light scattering layer and the light absorption layer (rectangular shape), the opening portion on the side away from the substrate 1 of the partition wall 15Q becomes wider. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • FIG. 11H is a cross-sectional view showing a nineteenth modification of the partition wall.
  • the partition wall 15R of this modification also has a two-layer structure of a light absorption layer 15Ra and a light scattering layer 15Rb as shown in FIG. 11H.
  • the light absorption layer 15 ⁇ / b> Ra has a trapezoidal shape in which the side cross-section side (lower base) on the side in contact with the substrate 1 is shorter than the side (upper base) on the side away from the substrate 1.
  • the light scattering layer 15 ⁇ / b> Rb has a trapezoidal shape in which the side section (lower base) on the side in contact with the light absorption layer 15 ⁇ / b> Ra is shorter than the side (upper base) on the side away from the substrate 1.
  • the light scattering layer 15Rb has a side cross-sectional shape whose side (lower bottom) on the side in contact with the light absorption layer 15Ra is shorter than the side (upper bottom) on the side away from the substrate 1 of the light absorption layer 15Ra.
  • the side cross-sectional shape of the partition wall 15R is separated from the substrate 1, although the planar cross-sectional area gradually decreases toward the substrate 1 in each of the light absorption layer 15Ra and the light scattering layer 15Rb.
  • the light scattering layer 15 ⁇ / b> Rb on the side has a shape smaller in width than the light absorption layer 15 ⁇ / b> Ra on the side in contact with the substrate 1.
  • the opening portion on the side away from the substrate 1 of the partition wall 15R becomes wider. Therefore, also in the configuration of the present modification, it is possible to suppress the excitation light from entering the adjacent pixel of the pixel that should be incident, and to suppress the occurrence of color blur due to the emission of an undesired phosphor layer. .
  • the shape of the partition wall includes a configuration that includes a shape perpendicular to the substrate 1 in at least a part of the partition wall, and gradually decreases as the cross-sectional area toward the substrate 1.
  • the present invention is not limited to the shape shown in the modification example, and various shapes can be adopted.
  • the light source 2 for exciting the phosphor layers 3R, 3G, 3B is preferably ultraviolet light or blue light.
  • EL etc. are mentioned, this embodiment is not limited to these light sources.
  • by directly switching these light sources 2 it is possible to control ON / OFF of light emission for displaying an image. It is also possible to control the ON / OFF of light emission by arranging a layer having a shutter function such as liquid crystal between the phosphor layers 3R, 3G, 3B and the light source 2, and controlling it. is there. It is also possible to control ON / OFF of both the layer having a shutter function such as liquid crystal and the light source 2.
  • the light source 2 a known ultraviolet LED, blue LED, ultraviolet light emitting inorganic EL, blue light emitting inorganic EL, ultraviolet light emitting organic EL, blue light emitting organic EL or the like can be used, and is not particularly limited. It can be produced by a known production method.
  • the ultraviolet light preferably emits light having a main light emission peak of 360 nm to 410 nm, and the blue light preferably has light emission of a main light emission peak of 435 nm to 480 nm.
  • the light source 2 desirably has directivity. Directivity refers to the property that the intensity of light varies depending on the direction. The directivity may be provided at the time when light enters the phosphor layer.
  • the light source 2 desirably makes parallel light incident on the phosphor layer.
  • the degree of directivity of the light source 2 is preferably a half width of ⁇ 30 degrees or less, more preferably ⁇ 10 degrees or less. This is because when the half-value width is larger than 30 degrees, light emitted from the backlight is incident on a pixel other than a desired pixel and excites an undesired phosphor to reduce color purity and contrast.
  • the light source 2A that can be suitably used for the light source 2 will be described.
  • an LED light emitting diode
  • a known LED can be used.
  • an ultraviolet light emitting inorganic LED and a blue light emitting inorganic LED are suitable. These LEDs include, for example, a first buffer layer 23, an n-type contact layer 24, a second n-type cladding layer 25, a first n-type cladding layer 26, an active layer 27, a first layer on one surface of the substrate 9.
  • a p-type cladding layer 28, a second p-type cladding layer 29, and a second buffer layer 30 are sequentially stacked, a cathode 22 is formed on the n-type contact layer 24, and an anode 21 is formed on the second buffer layer 30. It is the light source 2A of the formed structure.
  • the specific structure of LED is not restricted to the above-mentioned thing.
  • the active layer 27 is a layer that emits light by recombination of electrons and holes, and a known active layer material for LED can be used as the active layer material.
  • a known active layer material for LED can be used as the active layer material.
  • an active layer material for example, as an ultraviolet active layer material, AlGaN, InAlN, In a Al b Ga 1-ab N (0 ⁇ a, 0 ⁇ b, a + b ⁇ 1), blue active layer material In z Ga 1 -z N (0 ⁇ z ⁇ 1) and the like are exemplified, but the active layer material is not limited thereto.
  • the active layer 27 a single quantum well structure or a multiple quantum well structure can be used.
  • the active layer of the quantum well structure may be either n-type or p-type.
  • the half-value width of the emission wavelength is narrowed by band-to-band emission, and emission with good color purity is obtained. Therefore, it is preferable.
  • the active layer 27 may be doped with at least one of a donor impurity and an acceptor impurity. If the crystallinity of the active layer doped with impurities is the same as that of non-doped, doping with donor impurities can further increase the emission intensity between bands as compared with non-doped ones.
  • the acceptor impurity is doped, the peak wavelength can be shifted to a lower energy side by about 0.5 eV than the peak wavelength of interband light emission, but the full width at half maximum is increased.
  • both the acceptor impurity and the donor impurity are doped, the light emission intensity can be further increased as compared with the light emission intensity of the active layer doped only with the acceptor impurity.
  • the conductivity type of the active layer is preferably doped with a donor impurity such as Si to be n-type.
  • the n-type cladding layers 25 and 26 known n-type cladding layer materials for LEDs can be used.
  • the n-type cladding layer is composed of two layers, a first n-type cladding layer 26 and a second n-type cladding layer 25, but the n-type cladding layer may be a single layer, Three or more layers may be used.
  • the n-type cladding layer By forming the n-type cladding layer with a material formed of an n-type semiconductor having a band gap energy larger than that of the active layer 27, a potential barrier for holes is formed between the n-type cladding layer and the active layer 27. Can be confined in the active layer.
  • n-type cladding layers 25 and 26 can be formed by n-type Inx Ga1-x N (0 ⁇ x ⁇ 1), but n-type cladding layers 25 and 26 are limited to these. is not.
  • the p-type cladding layers 28 and 29 a known p-type cladding layer material for LED can be used.
  • the p-type cladding layer is composed of two layers, a first p-type cladding layer 28 and a second p-type cladding layer 29, but the p-type cladding layer may be a single layer, Three or more layers may be used.
  • the p-type cladding layer By forming the p-type cladding layer with a material formed of a p-type semiconductor having a band gap energy larger than that of the active layer 27, a potential barrier for electrons is formed between the p-type cladding layer and the active layer 27, and the electrons are active. It becomes possible to confine in the layer 27.
  • the p-type cladding layers 28 and 29 can be formed of Aly Ga1-y N (0 ⁇ y ⁇ 1), but the p-type cladding layers 28 and 29 are not limited to these.
  • n-type contact layer 24 a known contact layer material for LED can be used.
  • an n-type contact layer made of n-type GaN can be formed as a layer for forming an electrode (cathode 22) in contact with the n-type cladding layer.
  • a p-type contact layer made of p-type GaN as a layer for forming the electrode (anode 21) in contact with the p-type cladding layer.
  • this contact layer need not be formed if the second n-type cladding layer 25 and the second p-type cladding layer 29 are made of GaN.
  • the second n-type and p-type cladding layers are not necessary. Can be used as a contact layer.
  • a known film formation process for LED can be used, but the film formation process is not particularly limited thereto.
  • a vapor phase growth method such as MOVPE (metal organic vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), HDVPE (hydride vapor phase epitaxy), for example, sapphire (C plane, A plane, R ), SiC (including 6H—SiC, 4H—SiC), spinel (MgAl 2 O 4 , especially its (111) plane), ZnO, Si, GaAs, or other oxide single crystal substrates (such as NGO)
  • MOVPE metal organic vapor phase epitaxy
  • MBE molecular beam vapor phase epitaxy
  • HDVPE hydrogen vapor phase epitaxy
  • sapphire C plane, A plane, R
  • SiC including 6H—SiC, 4H—SiC
  • spinel MgAl 2 O 4 , especially its (111) plane
  • an organic EL element can be used as the light source 2B.
  • a known organic EL can be used.
  • the organic EL element 2B includes, for example, an anode 41, a hole injection layer 43, a hole transport layer 44, a light emitting layer 45, a hole prevention layer 46, an electron transport layer 47, an electron injection layer 48, and a cathode 49 on one surface of the substrate 9.
  • An edge cover 42 is formed so as to cover the end face of the anode 41.
  • the organic EL element 2B only needs to include an organic EL layer including at least a light emitting layer (organic light emitting layer) 45 made of an organic light emitting material between the anode 41 and the cathode 49.
  • a light emitting layer organic light emitting layer
  • the specific configuration is as described above. It is not limited to.
  • the layers from the hole injection layer 43 to the electron injection layer 48 may be referred to as an organic EL layer.
  • the organic EL element 2B is provided in a matrix corresponding to each of the red subpixel PR, the green subpixel PG, and the blue subpixel PB shown in FIG. 1, and is individually controlled to be turned on / off. Yes.
  • the driving method of the plurality of organic EL elements 2B may be active matrix driving or passive matrix driving. A configuration example using an active matrix organic EL element will be described in detail later.
  • substrate As the substrate 9 used in this embodiment, for example, an inorganic substrate made of glass, quartz, etc., a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, etc., an insulating substrate such as a ceramic substrate made of alumina, or the like, or A metal substrate made of aluminum (Al), iron (Fe), or the like, or a substrate in which an insulating material made of silicon oxide (SiO 2 ) or an organic insulating material is coated on the substrate, or a metal substrate made of Al or the like Examples thereof include a substrate whose surface is subjected to insulation treatment by a method such as anodization.
  • a substrate in which the plastic substrate is coated with an inorganic material, and a substrate in which the metal substrate is coated with an inorganic insulating material are more preferable.
  • deterioration of organic EL due to moisture permeation which is the biggest problem when a plastic substrate is used as an organic EL substrate (organic EL is known to occur particularly even with a low amount of moisture, is known. Can be resolved.
  • leakage (short) due to protrusions on the metal substrate which is the biggest problem when a metal substrate is used as an organic EL substrate (the film thickness of the organic EL is as thin as about 100 to 200 nm, so the pixel portion due to the protrusions) It is known that leakage (short-circuit) occurs in the current at (1).
  • a substrate that does not melt at a temperature of 500 ° C. or lower and does not cause distortion.
  • a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT on the metal substrate with a conventional production apparatus, but the linear expansion coefficient is 1 ⁇ 10 ⁇ 5 / ° C. or less.
  • a metal substrate which is an iron-nickel alloy of this type and adjusting the linear expansion coefficient to glass, it becomes possible to form TFTs on the metal substrate at low cost using a conventional production apparatus.
  • the heat-resistant temperature is very low, it is possible to transfer and form the TFT on the plastic substrate by forming the TFT on the glass substrate and then transferring the TFT to the plastic substrate. is there.
  • the substrate used is from the organic EL layer. In order to extract emitted light to the outside, it is necessary to use a transparent or translucent substrate.
  • the anode 41 and the cathode 49 used in the present embodiment function as a first electrode and a second electrode that supply current to the organic EL layer.
  • the anode 41 that is the first electrode is disposed on the substrate 9 side with the organic EL layer interposed therebetween, and the cathode 49 that is the second electrode is disposed on the side opposite to the substrate 9 with the organic EL layer interposed therebetween.
  • this relationship may be reversed.
  • the anode 41 that is the first electrode may be disposed on the side opposite to the substrate 9 with the organic EL layer interposed therebetween, and the cathode 49 that is the second electrode may be disposed on the substrate 9 side with the organic EL layer interposed therebetween.
  • Specific compounds and formation methods are exemplified below, but the compounds and formation methods are not limited to these.
  • an electrode material for forming the anode 41 and the cathode 49 a known electrode material can be used.
  • an electrode material for forming the anode gold (Au), platinum (Pt), nickel (Ni) or the like having a work function of 4.5 eV or more is used from the viewpoint of efficiently injecting holes into the organic EL layer.
  • Metals and oxides (ITO) made of indium (In) and tin (Sn), oxides of tin (Sn) (SnO 2 ), oxides of indium (In) and zinc (Zn) (IZO), etc. It is mentioned as a transparent electrode material.
  • metals such as barium (Ba) and aluminum (Al), or alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.
  • the anode 41 and the cathode 49 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials. It is not limited to the forming method. If necessary, the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thickness is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.
  • a translucent electrode is used as the anode 41. It is preferable to use it.
  • the material used here it is possible to use a metal translucent electrode alone or a combination of a metal translucent electrode and a transparent electrode material, but as a translucent electrode material, from the viewpoint of reflectance and transmittance Silver is preferred.
  • the film thickness of the translucent electrode is preferably 5 to 30 nm. When the film thickness is less than 5 nm, light cannot be sufficiently reflected, and interference effects cannot be obtained sufficiently.
  • the film thickness exceeds 30 nm, the light transmittance is drastically reduced, so that the luminance and efficiency may be lowered.
  • an electrode with high reflectivity that reflects light as the cathode 49.
  • electrode materials used in this case include reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys, transparent electrodes, and reflective metal electrodes (reflective electrodes). The electrode etc. which combined these are mentioned.
  • the anode 41 When light emitted from the organic EL layer is taken out from the cathode 49 side, the anode 41 may be formed of a highly reflective electrode and the cathode 49 may be a translucent electrode, contrary to the above.
  • Organic EL layer used in the present embodiment may be a single layer structure of an organic light emitting layer or a multilayer structure of an organic light emitting layer and a charge transport layer. Specifically, the following configurations may be mentioned. The configuration is not limited by these. In the example of FIG. 13, the following configuration (8) is used. In the following description, holes and electrons are referred to as charges, and a layer that injects charges from the anode 41 or the cathode 49 toward the light emitting layer 45 (hole injection layer or electron injection layer) is referred to as a charge injection layer.
  • a layer (hole transport layer, electron transport layer) that transports charges injected from the anode 41 or the cathode 49 by the charge injection layer toward the light emitting layer 45 is referred to as a charge transport layer, and the charge injection layer and the charge transport layer are collectively referred to. Therefore, it may be referred to as a charge injection / transport layer.
  • Organic light emitting layer (2) Hole transport layer / organic light emitting layer (3) Organic light emitting layer / electron transport layer (4) Hole transport layer / organic light emitting layer / electron transport layer (5) Hole injection layer / Hole transport layer / organic light emitting layer / electron transport layer (6) hole injection layer / hole transport layer / organic light emitting layer / electron transport layer / electron injection layer (7) hole injection layer / hole transport layer / organic Light emitting layer / Hole prevention layer / Electron transport layer (8) Hole injection layer / Hole transport layer / Organic light emitting layer / Hole prevention layer / Electron transport layer / Electron injection layer (9) Hole injection layer / Hole Transport layer / electron prevention layer / organic light emitting layer / hole prevention layer / electron transport layer / electron injection layer
  • Each layer of the organic light emitting layer, hole injection layer, hole transport layer, hole prevention layer, electron prevention layer, electron transport layer and electron injection layer may have a single layer structure or a multilayer structure.
  • the organic light emitting layer 45 may be composed of only an organic light emitting material exemplified below, or may be composed of a combination of a light emitting dopant and a host material, and optionally a hole transport material, an electron transport material, Additives (donor, acceptor, etc.) may be included, and these materials may be dispersed in a polymer material (binding resin) or an inorganic material. From the viewpoint of luminous efficiency and lifetime, those in which a luminescent dopant is dispersed in a host material are preferable.
  • organic light emitting material a known light emitting material for organic EL can be used. Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but organic light-emitting materials are not limited to these materials.
  • the light-emitting material may be classified into a fluorescent material, a phosphorescent material, and the like, and it is preferable to use a phosphorescent material with high light emission efficiency from the viewpoint of reducing power consumption.
  • organic light emitting material is not limited to these materials.
  • a known dopant material for organic EL can be used as the light-emitting dopant optionally contained in the light-emitting layer.
  • a dopant material for example, as an ultraviolet light emitting material, p-quaterphenyl, 3,5,3,5 tetra-t-butylsecphenyl, 3,5,3,5 tetra-t-butyl-p -Fluorescent materials such as quinckphenyl.
  • fluorescent light emitting materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate, iridium (III) (FIrpic), bis (4 ′, 6′-difluorophenyl) And phosphorescent organometallic complexes such as polydinato) tetrakis (1-pyrazoyl) borate, iridium (III) (FIr6), and the like.
  • a known host material for organic EL can be used as a host material when using a dopant.
  • host materials include the low-molecular light-emitting materials, the polymer light-emitting materials, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene (CPF), 3 , 6-bis (triphenylsilyl) carbazole (mCP), carbazole derivatives such as (PCF), aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3- And fluorene derivatives such as bis (9-phenyl-9H-fluoren-9-yl) benzene (mDPFB) and 1,4-bis (9-phenyl-9H-fluoren-9-yl) benzene (pDPFB).
  • the charge injection / transport layer is used to more efficiently inject charges (holes, electrons) from the electrode and transport (injection) to the light emitting layer, and the charge injection layer (hole injection layer, electron injection layer). It is classified as a transport layer (hole transport layer, electron transport layer).
  • the charge injecting and transporting layer may be composed only of the charge injecting and transporting material exemplified below, and may optionally contain additives (donor, acceptor, etc.), and these materials are polymer materials (conjugation). Wear resin) or a structure dispersed in an inorganic material.
  • charge injection / transport material known charge transport materials for organic EL and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but the charge injecting and transporting materials are not limited to these materials. Absent.
  • the hole injection / hole transport material examples include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis (3 -Methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD), etc.
  • oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 )
  • inorganic p-type semiconductor materials examples include porphyrin compounds, N, N′-bis (3 -Methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD), etc
  • Low molecular weight materials such as tertiary amine compounds, hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythiophene / polystyrene sulfonate ( PEDOT / PSS), poly (triphenylamine) derivative (Poly-TPD), polyvinylcarbazole (PVC) z), polymer materials such as poly (p-phenylene vinylene) (PPV), poly (p-naphthalene vinylene) (PNV), and the like.
  • PANI polyaniline
  • PANI-CSA polyaniline-camphor sulfonic acid
  • PEDOT / PSS poly (triphenylamine) derivative
  • PVC polyvinylcarbazole
  • polymer materials such as poly (p-phenylene vinylene) (PPV), poly (p-naphthalene
  • the highest occupied molecular orbital than the hole injection / transport material used for the hole transport layer 44 is used as a material used for the hole injection layer 43 in terms of more efficiently injecting / transporting holes from the anode 41.
  • a material having a low energy level of (HOMO) is preferably used, and a material having a higher hole mobility than the hole injection transport material used for the hole injection layer 43 is used as the hole transport layer 44. preferable.
  • acceptor In order to improve the hole injection / transport property, it is preferable to dope the hole injection / transport material with an acceptor.
  • an acceptor a known acceptor material for organic EL can be used. Although these specific compounds are illustrated below, acceptor material is not limited to these materials.
  • Acceptor materials include Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF 4 (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc.
  • TNF trinitrofluorenone
  • DNF dinitrofluorenone
  • organic materials such as fluoranyl, chloranil and bromanyl.
  • compounds having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB, DDQ and the like are more preferable because they can increase the carrier concentration more effectively.
  • Electron injection / electron transport materials include, for example, inorganic materials that are n-type semiconductors, oxadiazole derivatives, triazole derivatives, thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, diphenoquinone derivatives, fluorenone derivatives, benzodifuran derivatives And low molecular weight materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS).
  • examples of the electron injection material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • the energy level of the lowest unoccupied molecular orbital (LUMO) than the electron injection and transport material used for the electron transport layer 47 is used. It is preferable to use a material having a high electron mobility, and it is preferable to use a material having a higher electron mobility than the electron injection transport material used for the electron injection layer 48 as the material used for the electron transport layer 47.
  • LUMO lowest unoccupied molecular orbital
  • the electron injection / transport material In order to further improve the electron injection / transport property, it is preferable to dope the electron injection / transport material with a donor.
  • a donor a known donor material for organic EL can be used. Although these specific compounds are illustrated below, donor material is not limited to these materials.
  • Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, In, anilines, phenylenediamines, benzidines (N, N, N ′, N′-tetraphenyl) Benzidine, N, N'-bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl- Benzidine, etc.), triphenylamines (triphenylamine, 4,4′4 ′′ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N-3- Methylphenyl-N-phenyl-amino) -triphenylamine, 4,4′4 ′′ -tris (N- (1-naphthyl) -N
  • organic materials such as condensed polycyclic compounds (wherein the condensed polycyclic compounds may have a substituent), TTFs (tetrathiafulvalene), dibenzofuran, phenothiazine, and carbazole.
  • a compound having an aromatic tertiary amine as a skeleton, a condensed polycyclic compound, and an alkali metal are more preferable because the carrier concentration can be increased more effectively.
  • the organic EL layers such as the light-emitting layer 45, the hole transport layer 44, the electron transport layer 47, the hole injection layer 43, and the electron injection layer 48 are organic EL layer forming coating solutions in which the above materials are dissolved and dispersed in a solvent.
  • a known wet process such as a resistance heating vapor deposition method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor deposition (OVPD) method or the like, Alternatively, it can be formed by a laser transfer method or the like.
  • the coating liquid for organic EL layer formation may contain the additive for adjusting the physical properties of coating liquid, such as a leveling agent and a viscosity modifier.
  • the film thickness of each organic EL layer is usually about 1 nm to 1000 nm, but preferably 10 nm to 200 nm. If the film thickness is less than 10 nm, the properties (charge injection characteristics, transport characteristics, confinement characteristics) that are originally required cannot be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, if the film thickness exceeds 200 nm, the drive voltage increases due to the resistance component of the organic EL layer, leading to an increase in power consumption.
  • an edge cover 42 is provided for the purpose of preventing leakage between the anode 41 and the cathode 49 at the edge portion of the anode 41 formed on the substrate 9 side.
  • the edge cover 42 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using an insulating material, and a known dry or wet photolithography.
  • the method of forming the edge cover 42 is not limited to these methods.
  • a known material can be used as the material constituting the edge cover 42 and is not particularly limited in the present embodiment.
  • the film thickness is preferably 100 nm to 2000 nm.
  • the thickness is 100 nm or less, the insulating property is not sufficient, and leakage occurs between the anode 41 and the cathode 49, resulting in an increase in power consumption and non-light emission.
  • the thickness is 2000 nm or more, the film forming process takes time, and the productivity is deteriorated and the electrode is disconnected at the edge cover 42.
  • the organic EL element 2B preferably has a microcavity structure (optical microresonator structure) due to an interference effect between a reflective electrode and a translucent electrode used as the anode 41 and the cathode 49, or a dielectric multilayer film.
  • a microcavity structure optical microresonator structure
  • the emission spectrum can be adjusted due to the interference effect, and the emission spectrum can be adjusted by adjusting to a desired emission peak wavelength and half width. Thereby, it is possible to control the phosphor layers 3R, 3G, and 3B to a spectrum that can be excited more effectively.
  • Organic EL element 2B is electrically connected to an external drive circuit.
  • the organic EL element 2B may be directly connected to and driven by an external drive circuit, or a switching circuit such as a TFT is arranged in the pixel, and the external drive circuit (scan line electrode) is connected to a wiring to which the TFT or the like is connected.
  • Circuit source driver
  • data signal electrode circuit gate driver
  • power supply circuit may be electrically connected.
  • FIG. 14 is a cross-sectional view of an organic EL element substrate 70 (light source) using the active matrix driving type organic EL element 2B.
  • a TFT (driving element) 51 is formed on one surface of the substrate 9. That is, the gate electrode 52 and the gate line 53 are formed, and the gate insulating film 54 is formed on the substrate 9 so as to cover the gate electrode 52 and the gate line 53.
  • An active layer (not shown) is formed on the gate insulating film 54, and a source electrode 55, a drain electrode 56 and a data line 57 are formed on the active layer, and covers the source electrode 55, the drain electrode 56 and the data line 57.
  • a planarizing film 58 is formed.
  • planarization film 58 does not have to have a single layer structure, and may be configured by combining another interlayer insulating film and the planarization film. Further, a contact hole 59 that reaches the drain electrode 56 through the planarizing film or the interlayer insulating film is formed, and the organic EL element that is electrically connected to the drain electrode 56 through the contact hole 59 on the planarizing film 58. A 2B anode 41 is formed. The configuration of the organic EL element 2B itself is the same as that described above.
  • the TFT 51 is formed on the substrate 9 before forming the organic EL element 2B, and functions as a pixel switching element and an organic EL element driving element.
  • Examples of the TFT 51 used in this embodiment include known TFTs, which can be formed using known materials, structures, and formation methods.
  • a metal-insulator-metal (MIM) diode can be used instead of the TFT 51.
  • Examples of the material of the active layer of the TFT 51 include inorganic semiconductor materials such as amorphous silicon (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, and cadmium selenide, zinc oxide, indium oxide-gallium oxide, and the like. Examples thereof include oxide semiconductor materials such as zinc oxide, or organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene. Moreover, as a structure of TFT51, a stagger type
  • a method for forming the active layer constituting the TFT 51 (1) a method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD), and (2) a silane (SiH 4 ) gas is used.
  • PECVD plasma induced chemical vapor deposition
  • SiH 4 silane
  • amorphous silicon by low pressure chemical vapor deposition (LPCVD), crystallizing amorphous silicon by solid phase epitaxy to obtain polysilicon, and then ion doping by ion implantation, (3) Si 2 H A method in which amorphous silicon is formed by LPCVD using 6 gases or PECVD using SiH 4 gas, annealed by a laser such as an excimer laser, and amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (Low temperature process), (4) LPCVD How is a polysilicon layer is formed by a PECVD method, a gate insulating film formed by thermal oxidation at 1000 ° C.
  • LPCVD low pressure chemical vapor deposition
  • the gate insulating film 54 of the TFT 51 used in this embodiment can be formed using a known material. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film. Further, the data line 57, the gate line 53, the source electrode 55, and the drain electrode 56 of the TFT 51 used in this embodiment can be formed using a known conductive material, for example, tantalum (Ta), aluminum (Al ), Copper (Cu), and the like.
  • the TFT 51 according to this embodiment can be configured as described above, but is not limited to these materials, structures, and formation methods.
  • the interlayer insulating film used in the present embodiment can be formed using a known material.
  • the formation method include dry processes such as chemical vapor deposition (CVD) and vacuum deposition, and wet processes such as spin coating. Moreover, it can also pattern by the photolithographic method etc. as needed.
  • the present embodiment is not limited to these materials and forming methods.
  • unevenness is formed on the surface of the TFT 51 formed on the substrate 9 and various wirings and electrodes, and this unevenness causes defects in the organic EL element 2B (for example, defects or disconnection of the anode 41 or the cathode 49, There is a risk that a defect of the organic EL layer, a short circuit between the anode 41 and the cathode 49, a decrease in breakdown voltage, or the like) may occur. Therefore, it is desirable to provide the planarizing film 58 on the interlayer insulating film for the purpose of preventing these defects.
  • the planarization film 58 used in the present embodiment can be formed using a known material, for example, an inorganic material such as silicon oxide, silicon nitride, or tantalum oxide, or an organic material such as polyimide, acrylic resin, or resist material. Etc.
  • Examples of the method for forming the planarizing film 58 include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coat method.
  • the present embodiment is not limited to these materials and the formation method. .
  • the planarizing film 58 may have a single layer structure or a multilayer structure.
  • FIG. 15 is a schematic configuration diagram of a display device 200 including the organic EL element substrate 70.
  • the display device 200 includes an organic EL element substrate 70, a phosphor substrate 10 disposed to face the organic EL element substrate 70, and a pixel unit 71 provided in a region where the organic EL element substrate 70 and the phosphor substrate 10 face each other.
  • a gate signal side drive circuit 72 for supplying a drive signal to the pixel portion 71, a data signal side drive circuit 73, a signal wiring 74, a current supply line 75, and a flexible printed wiring board 76 (connected to the organic EL element substrate 70).
  • FPC field-driven driving circuit
  • the organic EL element substrate 70 is connected to an external drive circuit 77 including a scanning line electrode circuit, a data signal electrode circuit, a power supply circuit, and the like via the FPC 76 in order to drive the organic EL element 2B shown in FIG. Are electrically connected.
  • the switching circuit such as the TFT 51 shown in FIG. 14 is arranged in the pixel portion 71, and the organic EL element 2B is driven to the wiring such as the data line 57 and the gate line 53 to which the TFT 51 is connected.
  • the data signal side driving circuit 73 and the gate signal side driving circuit 72 are connected to each other, and an external driving circuit 77 is connected to these driving circuits via a signal wiring 74.
  • a plurality of gate lines 53 and a plurality of data lines 57 are arranged, and TFTs 51 are arranged at intersections of the gate lines 53 and the data lines 57.
  • the organic EL element according to this embodiment is driven by a voltage-driven digital gradation method, and two TFTs, a switching TFT and a driving TFT, are arranged for each pixel, and the driving TFT And the anode of the light emitting portion (organic EL element 2B) are electrically connected through a contact hole 59 formed in the planarizing film 58 shown in FIG. Further, a capacitor for setting the gate potential of the driving TFT to a constant potential is arranged in one pixel so as to be connected to the gate electrode of the driving TFT.
  • the present embodiment is not particularly limited to these, and the driving method may be the voltage-driven digital gradation method described above or the current-driven analog gradation method.
  • the number of TFTs is not particularly limited, and the organic EL element may be driven by the two TFTs described above, and in order to prevent variations in TFT characteristics (mobility, threshold voltage), Alternatively, the organic EL element may be driven using two or more TFTs incorporating a compensation circuit.
  • an inorganic EL element can be used as the light source 2C.
  • a known inorganic EL element can be used.
  • an ultraviolet light emitting inorganic EL element and a blue light emitting inorganic EL element are suitable.
  • These inorganic EL elements are, for example, light sources having a configuration in which a first electrode 81, a first dielectric layer 82, a light emitting layer 83, a second dielectric layer 84, and a second electrode 85 are sequentially stacked on one surface of a substrate 9. 2C.
  • the specific configuration of the inorganic EL element is not limited to the above.
  • first electrode 81 and the second electrode 85 used in this embodiment metals such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), and indium (In) and tin (
  • transparent electrode material examples include an oxide (ITO) made of Sn), an oxide of Sn (Sn) (SnO 2 ), an oxide made of indium (In) and zinc (Zn) (IZO), etc. It is not limited to these materials. However, a transparent electrode such as ITO is better in the light extraction direction. A reflective film such as aluminum is preferably used on the side opposite to the light extraction direction.
  • the first electrode 81 and the second electrode 85 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials. Is not limited to these forming methods. If necessary, the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thickness is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance is increased, which may increase the drive voltage.
  • Dielectric layer As the first dielectric layer 82 and the second dielectric layer 84 used in the present embodiment, a known dielectric material for inorganic EL can be used. Examples of such dielectric materials include tantalum pentoxide (Ta 2 O 5 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum titanate ( AlTiO 3 ) barium titanate (BaTiO 3 ), strontium titanate (SrTiO 3 ) and the like can be mentioned, but the dielectric material is not limited to these.
  • first dielectric layer 82 and the second dielectric layer 84 of the present embodiment may have one type selected from the above dielectric materials or a structure in which two or more types of materials are laminated.
  • the film thicknesses of the first dielectric layer 82 and the second dielectric layer 84 are preferably about 200 nm to 500 nm.
  • Light emitting layer As the light emitting layer 83 used in the present embodiment, a known light emitting material for inorganic EL elements can be used. As such a light emitting material, for example, ZnF 2 : Gd as an ultraviolet light emitting material, BaAl 2 S 4 : Eu, CaAl 2 S 4 : Eu, ZnAl 2 S 4 : Eu, Ba 2 as a blue light emitting material. Examples include SiS 4 : Ce, ZnS: Tm, SrS: Ce, SrS: Cu, CaS: Pb, (Ba, Mg) Al 2 S 4 : Eu, and the like, but the light emitting material is not limited thereto.
  • the thickness of the light emitting layer 83 is preferably about 300 nm to 1000 nm.
  • an LED, an organic EL element, an inorganic EL element, or the like can be suitably used as the light source 2 according to the display device of the above embodiment.
  • a sealing film or a sealing substrate for sealing a light emitting element such as an LED, an organic EL element, or an inorganic EL element.
  • the sealing film and the sealing substrate can be formed by a known sealing material and sealing method.
  • the sealing film can be formed by applying a resin on the surface opposite to the substrate main body constituting the light source by using a spin coat method, an ODF, or a laminate method.
  • resin is further applied using spin coating, ODF, or lamination.
  • the sealing film can be formed by bonding.
  • Such a sealing film or sealing substrate can prevent the entry of oxygen and moisture into the light source 2 from the outside, and the life of the light source 2 is improved. Further, when the light source substrate 11 provided with the light source 2 and the phosphor substrate 10 are bonded, it is possible to bond them with an adhesive layer 14 such as a general ultraviolet curable resin or a thermosetting resin. Further, when the light source 2 is directly formed on the phosphor substrate 10, for example, a method of sealing an inert gas such as nitrogen gas or argon gas with a glass plate, a metal plate, or the like can be given.
  • a hygroscopic agent such as barium oxide in the enclosed inert gas because deterioration of the organic EL due to moisture can be more effectively reduced.
  • the above embodiment is not limited to these members and forming methods.
  • the display device 100 of FIG. 1 may be provided with a polarizing plate on the light extraction side.
  • a polarizing plate a combination of a conventional linear polarizing plate and a ⁇ / 4 plate can be used.
  • the polarizing plate it is possible to prevent external light reflection from the electrodes of the display device 100 and external light reflection from the surface of the substrates 1 and 9 or the sealing substrate. Can be improved.
  • FIG. 18 is a schematic cross-sectional view of a display device 300 according to the seventh embodiment.
  • the display device 300 is a configuration example in which a liquid crystal element 90 that is an optical member is inserted between the phosphor substrate 10F and the light source substrate 11F.
  • the same reference numerals are given to components common to the display device 100 of the first embodiment, and detailed description thereof is omitted.
  • the display device 300 of this embodiment includes a phosphor substrate 10F, an organic EL element substrate 11F (light source substrate), and a liquid crystal element 90.
  • the basic configuration of the phosphor substrate 10F is the same as that of the first embodiment, and only the configuration of the partition 15A is different from that of the first embodiment.
  • the partition wall 15A of the present embodiment is the same as the partition wall of the second modification shown in FIG. 10B, and the side cross-sectional shape of the partition wall 15A is a triangular shape having a base on the side in contact with the substrate 1.
  • the laminated structure of the organic EL element substrate 11F is the same as that shown in FIG.
  • a driving signal is individually supplied to the organic EL element corresponding to each pixel, and each organic EL element is independently controlled to emit light and not emit light
  • the organic EL element 2B is not divided for each pixel and functions as a planar light source common to all the pixels.
  • the liquid crystal element 90 is configured such that the voltage applied to the liquid crystal layer 98 can be controlled for each pixel using the pair of electrodes 93 and 94, and the transmittance of light emitted from the entire surface of the organic EL element 2B is set to the pixel. Control every time. That is, the liquid crystal element 90 has a function as an optical shutter that selectively transmits light from the organic EL element substrate 11F for each pixel.
  • a known liquid crystal element can be used as the liquid crystal element 90 of the present embodiment.
  • the liquid crystal element 90 includes a pair of polarizing plates 91 and 92, electrodes 93 and 94, alignment films 95 and 96, and a substrate 97.
  • a liquid crystal layer 98 is sandwiched between the alignment films 95 and 96.
  • one optically anisotropic layer is disposed between the liquid crystal cell and one polarizing plate 91 or 92, or the optically anisotropic layer is disposed between the liquid crystal cell and both polarizing plates 91 and 92. 2 may be arranged.
  • the type of liquid crystal cell is not particularly limited and may be appropriately selected depending on the purpose. Examples thereof include TN mode, VA mode, OCB mode, IPS mode, and ECB mode.
  • the liquid crystal element 90 may be passively driven or may be actively driven using a switching element such as a TFT.
  • the phosphor substrate 10F, the liquid crystal element 90, and the organic EL element substrate 11F are joined and integrated through the adhesive layer 14. That is, the surface of the phosphor substrate 10F on which the phosphor layers 3R, 3G, and 3B are formed and the polarizing plate 91 of the liquid crystal element 90 are bonded together via the adhesive layer 14, and the organic EL element 2B of the organic EL element substrate 11F. And the polarizing plate 92 of the liquid crystal element 90 are bonded to each other with the adhesive layer 14 interposed therebetween.
  • At least one of the polarizing plates 91 and 92 preferably has an extinction ratio of 10,000 or more at a wavelength of 435 nm or more and 480 nm or less.
  • the extinction ratio can be measured, for example, by a rotating analyzer method using a Glan-Thompson prism.
  • the polarization transmittance refers to the transmittance when ideal polarized light is incident using a Glan-Thompson prism.
  • the contrast and transmittance mainly in the region of 550 nm, and the quenching in the short wavelength region of 490 nm or less of the iodine polarizing plate used in the conventional liquid crystal is about 2000 to 3000 (the extinction ratio in the green region and the red region is about 10,000).
  • the polarizing plate for a blue excitation type display using the blue light backlight according to the present embodiment, an optimum design can be made for the blue region, so that the extinction ratio in the blue region is 10,000 or more.
  • a polarizing plate is used.
  • the contrast of the panel can be increased.
  • a polarizing plate with a high extinction ratio has high transmittance, the light use efficiency of the backlight can be increased, and power consumption can be reduced.
  • Examples of the electronic apparatus provided with the display device of the embodiment include a mobile phone shown in FIG. 19A and a television receiver shown in FIG. 19B.
  • a cellular phone 1000 illustrated in FIG. 19A includes a main body 1001, a display portion 1002, an audio input portion 1003, an audio output portion 1004, an antenna 1005, an operation switch 1006, and the like.
  • the display device according to the above embodiment is used as the display portion 1002. It has been.
  • a television receiver 1100 illustrated in FIG. 19B includes a main body cabinet 1101, a display portion 1102, a speaker 1103, a stand 1104, and the like, and the display device of the above embodiment is used for the display portion 1102. In such an electronic device, since the display device of the above-described embodiment is used, an electronic device having excellent display quality can be realized.
  • the display device according to the embodiment of the present invention can be applied to, for example, the portable game machine shown in FIG. 20A.
  • a portable game machine 1200 illustrated in FIG. 20A includes an operation button 1201, an LED lamp 1202, a housing 1203, a display portion 1204, an infrared port 1205, and the like.
  • the display device of the present invention can be suitably applied as the display unit 1204. By applying the display device according to an embodiment of the present invention to the display unit 1204 of the portable game machine 1200, a high-contrast image can be displayed with low power consumption.
  • the display device can be applied to, for example, a notebook computer shown in FIG. 20B.
  • a notebook personal computer 1300 illustrated in FIG. 20B includes a keyboard 1301, a pointing device 1302, a housing 1303, a display portion 1304, a camera 1305, an external connection port 1306, a power switch 1307, and the like.
  • the display device of the present invention can be suitably applied as the display unit 1304 of the notebook computer 1300.
  • the notebook computer 1300 capable of displaying a high-contrast image can be realized.
  • the display device according to the embodiment of the present invention can be applied to, for example, the ceiling light shown in FIG. 21A.
  • a ceiling light 1400 illustrated in FIG. 21A includes an illumination unit 1401, a hanging tool 1402, a power cord 1403, and the like.
  • the display device of the present invention can be preferably applied as the illumination unit 1401.
  • illumination light having a free color tone can be obtained, and an illumination fixture with high light performance can be realized.
  • the display device according to an embodiment of the present invention can be applied to, for example, a lighting stand shown in FIG. 21B.
  • a lighting stand 1500 illustrated in FIG. 21B includes a lighting unit 1501, a stand 1502, a power switch 1503, a power cord 1504, and the like.
  • the display device of the present invention can be suitably applied as the illumination unit 1501.
  • illumination light with a free color tone can be obtained, and an illumination fixture with high light performance can be realized.
  • FIG. 22A to 22E are cross-sectional views showing a method for manufacturing the phosphor substrate 410X of the comparative example. As shown in FIG. 22A, 0.7 mm glass was used as the substrate 101X. This was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 100 ° C. for 1 hour.
  • a BK resist manufactured by Tokyo Ohka Co., Ltd. was applied using a spin coater. Then, it prebaked at 70 degreeC for 15 minutes, and formed the coating film with a film thickness of 1 micrometer.
  • the coating film was covered with a mask (pixel pitch 500 ⁇ m, line width 70 ⁇ m) capable of forming a desired image pattern, and exposed to i-line (100 mJ / cm 2 ). Subsequently, it developed using the sodium carbonate aqueous solution as a developing solution, and the rinse process was performed with the pure water, and the pattern-shaped structure 108X was obtained.
  • a white photosensitive composition comprising a photopolymerization initiator and an aromatic solvent was stirred and mixed to obtain a negative resist.
  • This negative resist was applied onto the substrate 101X using a spin coater.
  • a pattern was formed with a pixel pitch of 500 ⁇ m and a line width of 60 ⁇ m, and a rectangular partition wall 104X having a thickness of 50 ⁇ m for partitioning the sub-pixels was manufactured (FIG. 22A).
  • a red color filter 109XR, a green color filter 109XG, and a blue color filter 109XB were formed in a pattern on the area partitioned by the partition 104X.
  • a red phosphor layer 121X, a green phosphor layer 122X, and a blue light scattering layer 123X were formed in a pattern in a region partitioned by the partition wall 104X.
  • red phosphor layer 121X In the formation process of the red phosphor layer 121X, first, 30 g of 10 wt% polyvinyl alcohol aqueous solution was added to 20 g of red phosphor CaS: Eu having an average particle diameter of 4 ⁇ m, and a red phosphor forming coating solution was prepared by stirring with a disperser. .
  • the prepared red phosphor forming coating solution was applied by patterning to the area partitioned by the partition 104X by a dispenser method. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a red phosphor layer 121 having a refractive index of 1.6 was patterned with a film thickness of 25 ⁇ m (FIG. 22C).
  • the green phosphor layer 122X In the formation process of the green phosphor layer 122X, first, 30 g of 10 wt% polyvinyl alcohol aqueous solution was added to 20 g of green phosphor Ga2SrS4: Eu having an average particle diameter of 4 ⁇ m, and a green phosphor forming coating solution was prepared by stirring with a disperser. .
  • the prepared green phosphor forming coating solution was applied in a pattern to the area partitioned by the partition 104X by a dispenser method. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a green phosphor layer 122X having a refractive index of 1.6 with a film thickness of 25 ⁇ m (FIG. 22D).
  • a blue scatterer layer forming coating solution obtained by adding 30 g of a 10 wt% polyvinyl alcohol aqueous solution to 20 g of 1.5 ⁇ m silica particles (refractive index: 1.65) and stirring with a disperser. was made.
  • the prepared blue scatterer layer forming coating solution was applied in a pattern to the region partitioned by the partition 104X by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a blue light scattering layer 123X having a refractive index of 1.6 with a film thickness of 50 ⁇ m (FIG. 22E). Thus, the phosphor substrate 410X was completed.
  • FIG. 23 is a cross-sectional view of a display device 400X of a comparative example.
  • symbol hX is a distance between the surface of the partition wall 104X on the substrate 101X side and the surface of the liquid crystal substrate 490 side.
  • the symbol hX is the height of the partition wall 104X.
  • hX 50 ⁇ m.
  • the symbol sX is the distance between the surface on the partition 104X side of the second adhesive layer 422 and the surface on the bandpass filter 415 side.
  • the symbol sX is the thickness of the second adhesive layer 422 between the surface on the liquid crystal substrate 490 side of the partition 104X and the surface on the phosphor substrate 410X side of the bandpass filter 415.
  • the symbol dX is a thickness obtained by adding the thicknesses sX, d1, d2, d3, and d4 of the five layers excluding the height hX of the partition wall 104X among these six layers.
  • the symbol dX is the thickness between the surface of the partition 104X on the liquid crystal substrate 490 side and the surface of the first substrate 493 on the liquid crystal layer 498 side.
  • dX 250 ⁇ m.
  • Symbol NL passes through one side edge (the right side edge in the drawing) of the surface of the black matrix 495 on the first substrate 493 side and is parallel to the normal line of the surface of the first substrate 493X on the liquid crystal layer 498 side. It is.
  • the symbol MLX is a line connecting one side edge of the surface of the black matrix 495 on the first substrate 493 side and one side edge (right side edge in the drawing) of the surface of the partition 104X on the liquid crystal substrate 490 side. is there.
  • the backlight 412 includes a light source 413 and a light guide plate 414.
  • a blue LED was used as the light source 413.
  • the liquid crystal substrate 490 includes a first polarizing plate 491, a first substrate 493, a liquid crystal layer 498, a second substrate 494, and a second polarizing plate 492.
  • the first polarizing plate 491 and the second polarizing plate 492 have an extinction ratio of 12000 at a wavelength of 435 nm to 480 nm.
  • the liquid crystal is driven by an active matrix driving method using TFTs.
  • the pixels of the liquid crystal substrate 490 are partitioned by a black matrix 495.
  • a band pass filter 415 that transmits light in the blue region and reflects light from green to the near infrared region is bonded to the first knitted light plate 491 through the first adhesive layer 421.
  • the phosphor substrate 410X prepared by the above method was bonded to a liquid crystal substrate 490 provided with a bandpass filter 415 via a second adhesive layer 422.
  • a thermosetting transparent elastomer was used as the first adhesive layer 421 and the second adhesive layer 422.
  • a directional backlight having a directional light source 413 blue LED 413, peak wavelength 450 nm
  • light having a certain range of directivity predetermined light distribution
  • Light having characteristics is emitted.
  • the inventor of the present application when the backlight 412 is used, forms the light emission angle from the backlight 412 when color blur occurs in the display device 400X, and the line NL and the line MLX. It has been found that there is a certain relationship with the angle ⁇ X.
  • the emission angle of the light from the backlight 412 is the light incident perpendicularly to the liquid crystal substrate 490 in the direction of the light having directivity from the backlight 412 incident on the liquid crystal substrate 490. And the direction of light incident on the liquid crystal substrate 490 at a wide angle.
  • the light emission angle from the backlight 412 is oblique to the liquid crystal substrate 490 from the backlight 412 with reference to the direction of light perpendicularly incident on the liquid crystal substrate 490 from the backlight 412 (0 °).
  • the right side in the figure relative to the reference direction is the + side
  • the left side in the figure relative to the reference direction is the ⁇ side.
  • the light emission angle from the backlight 412 has a predetermined angle from the ⁇ side to the + side.
  • Whether or not color blur occurs in the display device 400X when the backlight 412 is used is determined by irradiating blue light from the backlight 412 toward the liquid crystal substrate 490X and emitting light from the phosphor layer 121X with a spectral luminance light intensity. Evaluation was made using a meter.
  • Example 1 As shown in FIG. 24A, the substrate was washed and the black layer was formed in the same manner as in Comparative Example 1. Next, as a material for the partition wall 104, epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile type titanium oxide (refractive index: 2.71, particle size 250 nm), A white photosensitive composition composed of diazonaphthoquinone and an aromatic solvent was stirred and mixed to obtain a negative resist.
  • epoxy resin reffractive index: 1.59
  • acrylic resin reffractive index: 1.49
  • rutile type titanium oxide Refractive index: 2.71, particle size 250 nm
  • a positive resist was applied onto the substrate 101 using a spin coater. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
  • the coating film was covered with a mask (pixel pitch 500 ⁇ m, line width 60 ⁇ m) capable of forming a desired image pattern, and exposed to i-line (300 mJ / cm 2 ). Subsequently, it developed using the alkaline developing solution, and obtained the pixel pattern-like structure. Subsequently, using a hot air circulation type drying furnace, post-baking was performed at 140 ° C. for 60 minutes, and the partition wall 104 partitioning the sub-pixels was produced. When observed by SEM, as shown in FIG. 24A, a partition wall 104 having a trapezoidal side cross-sectional shape could be formed.
  • a red color filter 109R, a green color filter 109G, and a blue color filter 109B were formed in a pattern in the area partitioned by the partition wall 104.
  • the red phosphor layer 121, the green phosphor layer 122, and the blue light scattering layer 123 were formed in a pattern in the region partitioned by the partition wall 104. .
  • the phosphor substrate 410 was completed.
  • FIG. 25 is a cross-sectional view of the display device 400 according to the first embodiment.
  • symbol h is the distance between the surface of the partition 104 on the substrate 101 side and the surface on the liquid crystal substrate 490 side.
  • the symbol h is the height of the partition wall 104.
  • h 50 ⁇ m.
  • the symbol s is the distance between the surface of the second adhesive layer 422 on the partition wall 104 side and the surface of the bandpass filter 415 side.
  • the symbol s is the thickness of the second adhesive layer 422 between the surface of the partition wall 104 on the liquid crystal substrate 490 side and the surface of the bandpass filter 415 on the phosphor substrate 410 side.
  • s 10 ⁇ m.
  • Reference sign d1 denotes the thickness of the bandpass filter 415.
  • d1 30 ⁇ m.
  • Reference sign d ⁇ b> 2 is the thickness of the first adhesive layer 421.
  • Reference sign d2 10 ⁇ m.
  • Reference sign d3 is the thickness of the first polarizing plate 491.
  • Reference sign d4 is the thickness of the first substrate 493.
  • d4 150 ⁇ m.
  • the symbol d is a thickness obtained by adding the thicknesses s, d1, d2, d3, and d4 of the five layers excluding the height h of the partition wall 104 among these six layers.
  • the symbol d is the thickness between the surface of the partition 104 on the liquid crystal substrate 490 side and the surface of the first substrate 493 on the liquid crystal layer 498 side.
  • d 250 ⁇ m.
  • Symbol NL passes through one side edge (the right side edge in the drawing) of the surface of the black matrix 495 on the first substrate 493 side and is parallel to the normal line of the surface of the first substrate 493X on the liquid crystal layer 498 side. It is.
  • the symbol ML connects one side edge of the surface of the black matrix 495 on the first substrate 493 side and one side edge of the surface of the partition wall 104 away from the substrate 101 (right side edge in the drawing). Is a line.
  • the backlight 412 includes a light source 413 and a light guide plate 414.
  • a blue LED was used as the light source 413.
  • the phosphor substrate 410 prepared by the above method was bonded to the liquid crystal substrate 490 provided with the band pass filter 415 through the second adhesive layer 422.
  • Whether or not color blur occurs in the display device 400 when the backlight 412 is used is determined by irradiating blue light from the backlight 412 toward the liquid crystal substrate 490 and emitting light from the phosphor layer 121 using spectral luminance light intensity. Evaluation was made using a meter.
  • Example 2 As shown in FIG. 26A, the substrate was washed and the black layer was formed in the same manner as in Comparative Example 1. Next, as a material of the partition wall 104A, epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile titanium oxide (refractive index: 2.71, particle size 250 nm), A white photosensitive composition composed of diazonaphthoquinone and an aromatic solvent was stirred and mixed to obtain a positive resist.
  • epoxy resin reffractive index: 1.59
  • acrylic resin reffractive index: 1.49
  • rutile titanium oxide Refractive index: 2.71, particle size 250 nm
  • a positive resist was applied onto the substrate 101 using a spin coater. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
  • the coating film was covered with a mask (pixel pitch 500 ⁇ m, line width 60 ⁇ m) capable of forming a desired image pattern, and exposed to i-line (300 mJ / cm 2 ). Subsequently, it developed using the alkaline developing solution, and obtained the pixel pattern-like structure. Subsequently, using a hot air circulation type drying furnace, post-baking was performed at 140 ° C. for 60 minutes to produce partition walls 104A for partitioning the sub-pixels. When observed with an SEM, a partition wall 104A having a triangular side cross-sectional shape as shown in FIG. 26A was formed.
  • a red color filter 109R, a green color filter 109G, and a blue color filter 109B were formed in a pattern in an area partitioned by the partition 104A.
  • FIG. 27 is a cross-sectional view of the display device 400A of the second embodiment.
  • symbol hA is the distance between the apex of the partition 104A on the side away from the substrate 101 and the surface on the liquid crystal substrate 490 side.
  • the symbol hA is the height of the partition wall 104A.
  • hA 50 ⁇ m.
  • Symbol sA is the thickness of the second adhesive layer 422 between the apex of the partition 104A on the side away from the substrate 101 and the surface of the bandpass filter 415 on the phosphor substrate 410 side.
  • sA 10 ⁇ m.
  • Reference sign d1 denotes the thickness of the bandpass filter 415.
  • d1 30 ⁇ m.
  • Reference sign d ⁇ b> 2 is the thickness of the first adhesive layer 421.
  • Reference sign d2 10 ⁇ m.
  • Reference sign d3 is the thickness of the first polarizing plate 491.
  • Reference sign d4 is the thickness of the first substrate 493.
  • d4 150 ⁇ m.
  • the symbol dA is a thickness obtained by adding the thicknesses sA, d1, d2, d3, and d4 of five layers excluding the height hA of the partition wall 104A among these six layers.
  • the symbol dA is the distance between the vertex of the partition 104A on the side away from the substrate 101 and the surface of the first substrate 493 on the liquid crystal layer 498 side.
  • dA 250 ⁇ m.
  • Symbol NL passes through one side edge (the right side edge in the drawing) of the surface of the black matrix 495 on the first substrate 493 side and is parallel to the normal line of the surface of the first substrate 493X on the liquid crystal layer 498 side. It is.
  • a symbol MLA is a line connecting one side edge of the surface of the black matrix 495 on the first substrate 493 side and a vertex of the partition 104A on the side away from the substrate 101.
  • the backlight 412 includes a light source 413 and a light guide plate 414.
  • a blue LED was used as the light source 413.
  • the phosphor substrate 410A prepared by the above method was bonded to the liquid crystal substrate 490 provided with the band pass filter 415 through the second adhesive layer 422.
  • Whether or not color blur occurs in the display device 400A when the backlight 412 is used is determined by irradiating blue light from the backlight 412 toward the liquid crystal substrate 490, and emitting light from the phosphor layer 121 using spectral luminance luminous intensity. Evaluation was made using a meter.
  • the present invention can be used in the fields of phosphor substrates, display devices, and electronic devices.
  • notebook computer electronic device
  • 1400 ceiling light
  • 1500 lighting stand
  • L1 excitation light
  • L2 fluorescence
  • PR red subpixel
  • PG green subpixel
  • PB blue subpixel

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention concerne un substrat de matériau fluorescent (10) comprenant : un substrat (1) ; une couche de matériau fluorescent (3) qui est prévue sur le substrat et qui émet une fluorescence due à la lumière d'excitation qui y est appliquée ; et des barrières (5) qui entourent les surfaces latérales de la couche de matériau fluorescent. Une forme de barrière sur le côté à une certaine distance d'au moins le substrat comprend une surface transversale, qui est de petite taille sur le côté à une certaine distance du substrat, et qui augmente progressivement vers le substrat, ladite surface transversale étant obtenue en découpant les barrières sur un plan parallèle à une surface du substrat.
PCT/JP2013/051066 2012-01-23 2013-01-21 Substrat de matériau fluorescent, appareil d'affichage et appareil électronique WO2013111696A1 (fr)

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WO2020063157A1 (fr) * 2018-09-28 2020-04-02 深圳光峰科技股份有限公司 Écran d'affichage à del
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JP2019028380A (ja) * 2017-08-03 2019-02-21 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル
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JP7452592B1 (ja) 2022-08-31 2024-03-19 Ｔｏｐｐａｎホールディングス株式会社 表示装置
WO2024053451A1 (fr) * 2022-09-05 2024-03-14 Ｔｏｐｐａｎホールディングス株式会社 Substrat de conversion de longueur d'onde et dispositif d'affichage

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