WO2011145418A1 - Dispositif d'affichage à matériau fluorescent, et couche de matériau fluorescent - Google Patents

Dispositif d'affichage à matériau fluorescent, et couche de matériau fluorescent Download PDF

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WO2011145418A1
WO2011145418A1 PCT/JP2011/059371 JP2011059371W WO2011145418A1 WO 2011145418 A1 WO2011145418 A1 WO 2011145418A1 JP 2011059371 W JP2011059371 W JP 2011059371W WO 2011145418 A1 WO2011145418 A1 WO 2011145418A1
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phosphor
light
layer
display device
organic
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PCT/JP2011/059371
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English (en)
Japanese (ja)
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昌人 大江
勇毅 小林
誠 山田
克己 近藤
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シャープ株式会社
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • C09K11/7789—Oxysulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/664—Halogenides
    • C09K11/665—Halogenides with alkali or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7736—Vanadates; Chromates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7737—Phosphates
    • C09K11/7738—Phosphates with alkaline earth metals
    • C09K11/7739—Phosphates with alkaline earth metals with halogens
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7794—Vanadates; Chromates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7795—Phosphates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to a phosphor display device and a phosphor layer. More specifically, the present invention relates to a phosphor display device and a phosphor layer that have a wide viewing angle and can realize a highly efficient multicolor light emitting element.
  • an electroluminescence (EL) element is self-luminous and thus has high visibility and is a completely solid element. Therefore, the EL element has excellent impact resistance and is easy to handle. Therefore, the EL element is attracting attention as a light emitting element in various display devices.
  • the EL element includes an inorganic EL element using an inorganic compound as a light emitting material and an organic EL element using an organic compound as a light emitting material. Among these, organic EL elements have been actively researched for practical use since the applied voltage can be significantly reduced.
  • the structure of the organic EL element is based on an anode / light emitting layer / cathode structure, and a hole injection / transport layer and an electron injection / transport layer are appropriately provided.
  • anode / hole injection / transport layer / light emitting layer / cathode and anode / hole injection / transport layer / light emitting layer / electron injection / transport layer / cathode are known.
  • the hole injecting and transporting layer has a function of transmitting holes injected from the anode to the light emitting layer.
  • the electron injecting and transporting layer has a function of transmitting electrons injected from the cathode to the light emitting layer. Therefore, by interposing the hole injecting and transporting layer between the light emitting layer and the anode, many holes are injected into the light emitting layer with a lower electric field. Furthermore, the hole injection transport layer does not transport electrons. For this reason, it is known that electrons injected from the cathode or the electron injecting and transporting layer into the light emitting layer are accumulated at the interface between the hole injecting and transporting layer and the light emitting layer, thereby increasing the light emission efficiency.
  • the organic EL element In order to make the organic EL element a multicolor light emitting element, for example, in a conventional display, pixels emitting red, green, and blue are arranged as one unit. Thereby, full colorization is performed by creating various colors typified by white (for example, see Non-Patent Document 1). In order to realize this, a method of forming red, green, and blue pixels by separately coating the organic light emitting layer by a mask vapor deposition method using a shadow mask is adopted. However, in this method, mask processing accuracy, mask alignment accuracy, and mask enlargement are major issues. In particular, in the field of large displays typified by television, the size of the mother glass for taking out the substrate has increased from the sixth generation (G6) to G8 and G10, and the substrate size has been increasing.
  • G6 sixth generation
  • G8 and G10 the sixth generation
  • the conventional method requires a mask having a size equal to or larger than the substrate size, it is necessary to manufacture and process a mask corresponding to a large substrate. Since this mask requires a very thin metal (general film thickness: 50 to 100 nm), it is very difficult to increase the size of the mask.
  • the problem of mask processing accuracy and alignment accuracy causes color mixing due to mixing of light emitting layers.
  • the area of the pixel is determined, the area of the non-light emitting portion is reduced and the aperture ratio of the pixel is lowered, leading to a decrease in luminance, an increase in power consumption, and a decrease in lifetime.
  • the organic material that is the vapor deposition source is disposed below the substrate, and the organic layer is formed by depositing and vaporizing constituent particles of the vapor deposition source from the bottom upward. Yes.
  • the mask is bent at the central portion, which causes color mixture of the light emitting layer as described above.
  • a portion where the organic layer is not formed is formed, which may lead to defects due to leakage of the upper and lower electrodes.
  • the problem of increasing the size of the mask leads to an increase in display cost.
  • the cost problem is regarded as the biggest problem in the organic EL display.
  • a light conversion method in which a fluorescent material that absorbs light in a light emitting region of an organic light emitting element and emits fluorescence in a visible light region is used as a filter without coating an organic light emitting layer for each color.
  • This method uses an organic EL having a light emitting layer that emits blue to blue green light. Further, this method uses a green pixel composed of a phosphor layer that absorbs blue to blue-green light emitted from the organic EL and emits green light. In addition, this method uses a red pixel composed of a phosphor layer that absorbs blue to blue-green light emitted from the organic EL and emits red light.
  • This method uses a blue pixel formed of a blue color filter for the purpose of improving color purity.
  • full colors are emitted by combining organic EL, green pixels, red pixels, and blue pixels.
  • This method is superior to the above-described coating method in that it is not necessary to pattern the organic light emitting layer and can be easily manufactured, and in terms of cost.
  • a phosphor display device that excites the phosphor layer using such blue light emission from the organic EL and realizes green and red to achieve full color is promising, and research and development are underway.
  • the present invention has been made in view of such conventional circumstances, and provides a phosphor display device and a phosphor layer that have high-efficiency fluorescence conversion (light extraction efficiency) and good viewing angle characteristics. For the purpose.
  • the present inventors have excited phosphors with light from a light source, and in phosphor display devices that display using light emitted from the phosphors. It has been found that the phosphor display device can be adapted to the purpose by changing the particle size distribution of the phosphor contained in the layer in the depth direction. That is, the present invention employs the following configuration.
  • a phosphor display device includes a light source and a phosphor layer including a phosphor that converts light from the light source into light having a different wavelength, and is included in the phosphor layer.
  • the average particle size of the phosphor is different on the side where the light from the light source is incident and on the side where the converted light is emitted.
  • the average particle diameter of the phosphor included in the phosphor layer is a side that emits converted light rather than a side on which light from the light source is incident. May be larger.
  • the phosphor display device may further include a light control unit that is provided between the light source and the phosphor layer and controls blocking and transmission of light emitted from the light source. good.
  • the light source is an organic EL element in which at least one organic layer including a light-emitting layer is held between a pair of electrodes, and light from the organic EL element is emitted.
  • the phosphor layer may be disposed on the surface to be taken out.
  • the light control unit may be a liquid crystal layer containing liquid crystal.
  • the electrode is a reflective electrode, and the optical film thickness between the reflective interfaces defined by the pair of reflective electrodes is emitted from the organic EL element. It may be set so as to enhance the intensity of light of a specific wavelength among the emitted light.
  • the light source emits light in a blue region
  • the phosphor layer can perform at least two kinds of color conversion, one of which emits light in the blue region.
  • a multicolor light emitting element including a phosphor that converts light in a green region and another phosphor that converts light in a blue region into light in a red region may be used.
  • a color filter may be provided on the side of the phosphor layer that emits the converted light.
  • the phosphor layer includes a first phosphor layer including a phosphor having an average particle diameter of 10 nm to 1 ⁇ m arranged on the light incident side of the light source; Alternatively, it may have a two-layer structure with a second phosphor layer including a phosphor having an average particle diameter of 10 ⁇ m to 50 ⁇ m arranged on the side of emitting the converted light.
  • the phosphor layer includes a phosphor that converts light from a light source into light having a different wavelength.
  • the side on which the incident light is incident is different from the side on which the converted light is emitted.
  • the average particle diameter of the phosphor may be larger on the side emitting the converted light than on the side on which the light from the light source is incident.
  • a first phosphor layer including a phosphor having an average particle diameter of 10 nm to 1 ⁇ m disposed on a side on which light from the light source is incident, and the converted light It may have a two-layer structure with a second phosphor layer containing a phosphor having an average particle diameter of 10 ⁇ m to 50 ⁇ m arranged on the emission side.
  • a phosphor display device and a phosphor layer capable of highly efficient fluorescence conversion, having a wide viewing angle, high color purity, and realizing a multicolor light emitting element.
  • FIG. 1 is a schematic cross-sectional view showing an example of a phosphor display device according to a first embodiment of the present invention. It is a schematic sectional drawing which shows the other example of the fluorescent substance display device which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows an example of the fluorescent substance display device which concerns on 2nd Embodiment of this invention. It is a schematic sectional drawing which shows an example of the fluorescent substance display device which concerns on 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the other example of the fluorescent substance display device concerning 3rd Embodiment of this invention.
  • each member is shown with a different scale so that each member has a size that can be recognized on the drawings.
  • FIG. 1 is a schematic sectional view showing an example of the phosphor display device according to the first embodiment of the present invention.
  • a phosphor display device 20 shown in FIG. 1 is roughly configured by a substrate 1, an organic EL element (light source) 10, a sealing substrate 9, a red phosphor layer 8R, a green phosphor layer 8G, and a functional layer 28B.
  • the substrate 1 includes a TFT (Thin Film Transistor) circuit 2.
  • the organic EL 10 is provided on the substrate 1.
  • the red phosphor layer 8 ⁇ / b> R, the green phosphor layer 8 ⁇ / b> G, and the functional layer 28 ⁇ / b> B are partitioned by the black matrix 7 and arranged in parallel on one surface of the sealing substrate 9.
  • the substrate 1 and the sealing substrate 9 are arranged so that the organic EL element 10 and the phosphor layers 8R and 8G and the functional layer 28B face each other with the sealing material 6 interposed therebetween.
  • light emitted from the organic EL element 10 that is a light source is incident on the phosphor layers 8R and 8G and the functional layer 28B. This incident light is transmitted as it is in the functional layer 28B, converted in each phosphor layer 8R, 8G, and emitted to the sealing substrate 9 side (observer side) as light of three colors of red, green, and blue. Is done.
  • a TFT circuit 2 and various wirings (not shown) are formed on the substrate 1.
  • An interlayer insulating film 3 and a planarizing film 4 are sequentially stacked so as to cover the upper surface of the substrate 1 and the TFT circuit 2.
  • the substrate for example, an inorganic material substrate made of glass, quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide or the like, an insulating substrate such as a ceramic substrate made of alumina or the like, aluminum (Al), iron (Fe ), Etc., a substrate coated with an insulating material made of an organic insulating material such as silicon oxide (SiO 2 ) on the surface, or a surface of a metal substrate made of Al or the like by a method such as anodization.
  • this invention is not limited to these.
  • a plastic substrate or a metal substrate since it becomes possible to form a bending part and a bending part without stress, it is preferable to use a plastic substrate or a metal substrate. It is more preferable to use a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material.
  • a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material.
  • the TFT circuit 2 In order to form the TFT circuit 2 on the base material 1, it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion.
  • a metal substrate When a metal substrate is used as the substrate 1, it is preferable to use a metal substrate formed of an iron-nickel alloy having a linear expansion coefficient of 1 ⁇ 10 ⁇ 5 / ° C. or less. Since a general metal substrate has a thermal expansion coefficient different from that of glass, it is difficult to form the TFT circuit 2 on the metal substrate with a conventional production apparatus. However, using a metal substrate formed of an iron-nickel alloy having a linear expansion coefficient of 1 ⁇ 10 ⁇ 5 / ° C.
  • the TFT circuit 2 is conventionally formed on the metal substrate by matching the linear expansion coefficient with glass. It can be formed at low cost using this production apparatus. Further, when a plastic substrate is used as the substrate 1, the heat resistant temperature is very low. Therefore, it is possible to transfer and form the TFT circuit 2 on the plastic substrate by forming the TFT circuit 2 on the glass substrate and then transferring the TFT substrate 2 to the plastic substrate.
  • the TFT circuit 2 is formed in advance on the substrate 1 before the organic EL element 10 is formed, and functions as a switching device and a driving device.
  • a conventionally known TFT circuit 2 can be used.
  • a metal-insulator-metal (MIM) diode can be used instead of TFT for switching and driving.
  • the TFT circuit 2 can be formed using a known material, structure, and formation method. Examples of the material of the active layer of the TFT circuit 2 include amorphous semiconductor materials such as amorphous silicon (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, and cadmium selenide, zinc oxide, indium oxide-oxide.
  • Examples thereof include oxide semiconductor materials such as gallium-zinc oxide, and organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene.
  • Examples of the structure of the TFT circuit 2 include a stagger type, an inverted stagger type, a top gate type, and a coplanar type.
  • the active layer forming the TFT circuit 2 can be formed by (1) a method of ion doping impurities into amorphous silicon formed by plasma enhanced chemical vapor deposition (PECVD), and (2).
  • Amorphous silicon is formed by low pressure chemical vapor deposition (LPCVD) using silane (SiH 4 ) gas, and amorphous silicon is crystallized by solid phase growth to obtain polysilicon.
  • LPCVD low pressure chemical vapor deposition
  • SiH 4 silane
  • Amorphous silicon is formed by LPCVD using Si 2 H 6 gas or PECVD using SiH 4 gas, and annealed by a laser such as an excimer laser to crystallize amorphous silicon.
  • a polysilicon layer is formed by LPCVD method or PECVD method, and a gate insulating film is formed by thermal oxidation at 1000 ° C. or higher, and n + polysilicon is formed thereon.
  • Examples include a method of forming a gate electrode and then performing ion doping (high-temperature process), (5) a method of forming an organic semiconductor material by an inkjet method or the like, and (6) a method of obtaining a single crystal film of an organic semiconductor material. It is done.
  • the gate insulating film of the TFT circuit 2 used in the present invention can be formed using a known material. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film. Further, the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT circuit 2 used in the present invention can be formed using a known material, for example, tantalum ( Ta), aluminum (Al), copper (Cu) and the like.
  • the interlayer insulating film 3 can be formed using a known material, for example, silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O). 5 )) or an organic material such as an acrylic resin or a resist material.
  • a known material for example, silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O). 5 )
  • an organic material such as an acrylic resin or a resist material.
  • Examples of the method for forming the interlayer insulating film 3 include a chemical vapor deposition (CVD) method, a dry process such as a vacuum deposition method, and a wet process such as a spin coating method. Moreover, it can also pattern by the photolithographic method etc. as needed.
  • CVD chemical vapor deposition
  • a dry process such as a vacuum deposition method
  • a wet process such as
  • the interlayer insulating film 3 (light-shielding insulating film) having light-shielding properties is used. Is preferred. In the present invention, the interlayer insulating film 3 and the light-shielding insulating film can be used in combination.
  • the light-shielding insulating film examples include a material in which a pigment or dye such as phthalocyanine or quinaclone is dispersed in a polymer resin such as polyimide, a color resist, a black matrix material, or an inorganic insulating material such as NixZnyFe 2 O 4 .
  • the planarizing film 4 is provided in order to prevent a defect or the like of the organic EL element 10 from being generated due to irregularities on the surface of the TFT circuit 2.
  • defects in the organic EL element 10 include a pixel electrode defect, an organic EL layer defect, a counter electrode disconnection, a pixel electrode-counter electrode short circuit, a breakdown voltage reduction, and the like.
  • the planarization film 4 can be omitted.
  • the planarization film 4 can be formed using a known material, and examples thereof include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material.
  • planarizing film 4 examples include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method, but the present invention is not limited to these materials and the forming method.
  • the planarizing film 4 may have a single layer structure or a multilayer structure.
  • an organic EL element 10 as a light source (light emission source) is formed.
  • the organic EL element 10 includes a first electrode 12, a second electrode 16, and an organic EL layer (organic layer) 17.
  • the first electrode 12 is an anode.
  • the second electrode 16 is a cathode disposed so as to face the first electrode 12.
  • the organic EL layer (organic layer) 17 is composed of at least one layer including the light emitting layer 14 sandwiched between the first electrode 12 and the second electrode 16.
  • the first electrode 12 and the second electrode 16 function as a pair as an anode or a cathode of the organic EL element 20. That is, when the first electrode 12 is an anode, the second electrode 16 is a cathode.
  • the second electrode 16 is an anode.
  • the hole injection layer and the hole transport layer are arranged on the second electrode side 16 in a laminated structure of an organic EL layer (organic layer) 17 described later.
  • the electron injection layer and the electron transport layer may be on the first electrode 12 side.
  • an electrode material for forming the first electrode 12 and the second electrode 16 a known electrode material can be used.
  • a material for forming the first electrode 12 that is an anode from the viewpoint of efficiently injecting holes into the organic EL layer 17, gold (Au), platinum (Pt), a work function of 4.5 eV or more, Metals such as nickel (Ni) and oxides (ITO) made of indium (In) and tin (Sn), oxides made of tin (Sn) (SnO 2 ), oxides made of indium (In) and zinc (Zn) (IZO) etc. are mentioned.
  • lithium (Li), calcium (with a work function of 4.5 eV or less) from the viewpoint of more efficiently injecting electrons into the organic EL layer 17
  • metals such as Ca), cerium (Ce), barium (Ba), and aluminum (Al), or alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.
  • the first electrode 12 and the second electrode 16 can be formed by a known method such as an EB (electron beam) vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials.
  • the present invention is not limited to these forming methods.
  • the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thickness of the first electrode 12 and the second electrode 16 is preferably 50 nm or more. When the film thicknesses of the first electrode 12 and the second electrode 16 are less than 50 nm, the wiring resistance increases, so that the drive voltage may increase.
  • the fluorescent display device 20 of the present embodiment light emitted from the light emitting layer 14 of the organic EL element 10 that is a light source is extracted from each phosphor layer 8R, 8G and the second electrode 16 side that is the functional layer 28B side. It is preferable to use a translucent electrode as the second electrode 16.
  • a translucent electrode As a material of the semitransparent electrode, a metal semitransparent electrode alone or a combination of a metal semitransparent electrode and a transparent electrode material can be used, and silver is preferable from the viewpoint of reflectance and transmittance.
  • the film thickness of the translucent electrode is preferably 5 to 30 nm.
  • the film thickness of the semitransparent electrode is less than 5 nm, when using the microcavity effect described later, there is a possibility that the light cannot be sufficiently reflected and the interference effect cannot be obtained sufficiently. Moreover, when the film thickness of a semi-transparent electrode exceeds 30 nm, since the light transmittance falls rapidly, there exists a possibility that a brightness
  • the extraction efficiency of light emission from the light emitting layer 14 is used as the first electrode 12 located on the side opposite to the side from which light emission from the light emitting layer 14 of the organic EL element 10 as a light source is extracted.
  • an electrode that reflects light and has a high reflectance.
  • electrode materials used at this time include reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys, and transparent and reflective metal electrodes (reflective electrodes). Combination electrodes and the like can be mentioned.
  • FIG. 1 shows an example in which the first electrode 12 that is a transparent electrode is formed on the planarizing film 4 via the reflective electrode 11.
  • the first electrode 12 positioned on the substrate 1 side (the side opposite to the side from which light emission from the light emitting layer 14 is extracted) is connected to each pixel (each phosphor layer 8R, 8G). , And a plurality of functional layers 28B).
  • An edge cover 19 made of an insulating material is formed so as to cover each edge portion (end portion) of the adjacent first electrode 12. The edge cover 19 is provided for the purpose of preventing leakage between the first electrode 12 and the second electrode 16.
  • the edge cover 19 can be formed using an insulating material by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, or the like, and a pattern can be formed by a known dry or wet photolithography method.
  • a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, or the like
  • a pattern can be formed by a known dry or wet photolithography method.
  • the present invention is not limited to these forming methods.
  • an insulating material layer which comprises the edge cover 19 a conventionally well-known material can be used and it does not specifically limit in this invention.
  • the insulating material layer constituting the edge cover 19 needs to transmit light, and examples thereof include SiO, SiON, SiN, SiOC, SiC, HfSiON, ZrO, HfO, and LaO.
  • the film thickness of the edge cover 19 is preferably 100 to 2000 nm. By setting the film thickness of the edge cover 19 to 100 nm or more, sufficient insulation is maintained, and leakage occurs between the first electrode 12 and the second electrode 16 to prevent an increase in power consumption and non-light emission. be able to. Further, by setting the film thickness of the edge cover 19 to 2000 nm or less, it is possible to prevent the productivity of the film forming process from being lowered and the disconnection of the second electrode 16 in the edge cover 19 from occurring.
  • the organic EL layer (organic layer) 17 may have a single layer structure of the light emitting layer 14 or a multilayer structure such as a stacked structure of the hole transport layer 13, the light emitting layer 14, and the electron transport layer 15 as shown in FIG. good. Specific examples include the following, but the present invention is not limited thereto.
  • the hole injection layer and the hole transport layer 13 are arranged on the first electrode 12 side that is an anode.
  • the electron injection layer and the electron transport layer 15 are disposed on the second electrode 16 side that is a cathode.
  • each of the light emitting layer 14, the hole injection layer, the hole transport layer 13, the hole prevention layer, the electron prevention layer, the electron transport layer 15 and the electron injection layer may have a single layer structure or a multilayer structure.
  • the light emitting layer 14 may be composed only of an organic light emitting material, or may be composed of a combination of a light emitting dopant and a host material, and optionally a hole transport material, an electron transport material, an additive (donor, Etc.) may be included.
  • the light emitting layer 14 may have a configuration in which these materials are dispersed in a polymer material (binding resin) or an inorganic material. From the viewpoint of luminous efficiency and lifetime, a material in which a luminescent dopant is dispersed in a host material is preferable.
  • the light emitting layer 14 recombines holes injected from the first electrode 12 and electrons injected from the second electrode 16 to emit (emit) light in a blue region (wavelength 350 to 500 nm).
  • organic light emitting material used for the light emitting layer 14 a conventionally known light emitting material for organic EL can be used, and a material that emits light in a blue region (wavelength 350 to 500 nm) can be used.
  • a low molecular weight organic light emitting material or a high molecular weight organic light emitting material can be used.
  • organic light emitting material either a fluorescent material or a phosphorescent material can be used. From the viewpoint of reducing power consumption, it is preferable to use a phosphorescent material having high light emission efficiency.
  • low-molecular organic light-emitting material examples include aromatic dimethylidene compounds such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 5-methyl-2- [2- [4- ( Oxadiazole compounds such as 5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole, 3- (4-biphenylyl) -4-phenyl-5-t-butylphenyl-1,2,4- Examples thereof include triazole derivatives such as triazole (TAZ), styrylbenzene compounds such as 1,4-bis (2-methylstyryl) benzene, and fluorescent organic materials such as fluorenone derivatives.
  • aromatic dimethylidene compounds such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 5-methyl-2- [2- [4- ( Oxadiazole compounds such as 5-methyl-2-benzoxazolyl) phen
  • polymer light emitting material examples include polyphenylene vinylene derivatives such as poly (2-decyloxy-1,4-phenylene) (DO-PPP), and polyspiro derivatives such as poly (9,9-dioctylfluorene) (PDAF). It is done.
  • polyphenylene vinylene derivatives such as poly (2-decyloxy-1,4-phenylene) (DO-PPP)
  • polyspiro derivatives such as poly (9,9-dioctylfluorene) (PDAF). It is done.
  • a conventionally well-known dopant material for organic EL can be used as a luminescent dopant.
  • dopant materials include fluorescent materials such as styryl derivatives, bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′ , 6′-difluorophenylpolydinato) tetrakis (1-pyrazoyl) borateiridium (III) (FIr6), and the like.
  • a conventionally well-known host material for organic EL can be used as a host material in the case of using a luminescent dopant.
  • host materials include the above-described low-molecular organic light-emitting materials, the above-described high-molecular organic light-emitting materials, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene ( Carbazole such as CPF), 3,6-bis (triphenylsilyl) carbazole (mCP), poly (N-octyl-2,7-carbazole-O-9,9-dioctyl-2,7-fluorene) (PCF) Derivatives, aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3-bis (9-phenyl-9H-fluoren-9-yl) benzene (m
  • the hole injection layer and the hole transport layer 13 are used for the purpose of more efficiently injecting holes from the first electrode 12 serving as an anode and transporting (injecting) them to the light emitting layer 14.
  • the electron injection layer and the electron transport layer 15 are formed between the second electrode 16 and the light emitting layer 14 for the purpose of more efficiently injecting electrons from the second electrode 16 serving as a cathode and transporting (injecting) them to the light emitting layer 14.
  • Each of these hole injection layer, hole transport layer 13, electron injection layer, and electron transport layer 15 can use a conventionally known material, and may be composed of only the materials exemplified below.
  • An additive donor, acceptor, etc.
  • Examples of the material constituting the hole transport layer 13 include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis ( Aromatics such as 3-methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD)
  • Low molecular weight materials such as tertiary amine compounds, hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (polyaniline-camphorsulfonic acid; PANI-CSA), 3,4-polyethylenedioxy Thiophene / polystyrene sulfonate (PEDOT / PSS), poly (triphenylamine) derivative (Poly
  • the material used as the hole injection layer is the highest occupied molecular orbital than the material used for the hole transport layer 13 in that the injection and transport of holes from the first electrode 12 that is the anode is performed more efficiently.
  • a material having a low (HOMO) energy level is preferably used.
  • the hole transport layer 13 is preferably a material having a higher hole mobility than the material used for the hole injection layer. Examples of the material for forming the hole injection layer include phthalocyanine derivatives such as copper phthalocyanine, 4,4 ′, 4 ′′ -tris (3-methylphenylphenylamino) triphenylamine, 4,4 ′, 4 ′′.
  • the hole injection layer and the hole transport layer 13 are preferably doped with an acceptor.
  • an acceptor a conventionally well-known material can be used as an acceptor material for organic EL.
  • Acceptor materials include Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ) and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF4 (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc.
  • Examples thereof include compounds, compounds having a nitro group such as TNF (trinitrofluorenone) and DNF (dinitrofluorenone), and organic materials such as fluoranyl, chloranil and bromanyl.
  • compounds having a cyano group such as TCNQ, TCNQF4, TCNE, HCNB, and DDQ are more preferable because they can increase the carrier concentration effectively.
  • the electron blocking layer the same materials as those described above as the hole transport layer 13 and the hole injection layer can be used.
  • Examples of the material constituting the electron transport layer 15 include an inorganic material that is an n-type semiconductor, an oxadiazole derivative, a triazole derivative, a thiopyrazine dioxide derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a diphenoquinone derivative, a fluorenone derivative, Low molecular materials such as benzodifuran derivatives; polymer materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS).
  • the material constituting the electron injection layer examples include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 )
  • oxides such as lithium oxide (Li 2 O).
  • the energy level of the lowest unoccupied molecular orbital (LUMO) is higher than that of the material used for the electron transport layer 15 in that electrons are injected and transported more efficiently from the second electrode 16 serving as the cathode. It is preferable to use a material having a high value. Further, as the material used for the electron transport layer 15, it is preferable to use a material having higher electron mobility than the material used for the electron injection layer.
  • Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, and In, anilines, phenylenediamines, N, N, N ′, N′-tetraphenylbenzidine, N , N′-bis- (3-methylphenyl) -N, N′-bis- (phenyl) -benzidine, N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine, etc.
  • Benzidines triphenylamine, 4,4 ′, 4 ′′ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4 ′, 4 ′′ -tris (N-3-methylphenyl-N Triphenylamines such as -phenyl-amino) -triphenylamine, 4,4 ', 4 "-tris (N- (1-naphthyl) -N-phenyl-amino) -triphenylamine, N, N' -Di- (4-methyl-phen Nyl) -N, N'-diphenyl-1,4-phenylenediamine and other aromatic tertiary amine compounds such as phenanthrene, pyrene, perylene, anthracene, tetracene, pentacene, etc.
  • organic materials such as a compound (however, the condensed polycyclic compound may have a substituent), TTF (tetrathiafulvalene), dibenzofuran, phenothiazine, carbazole and the like.
  • TTF tetrathiafulvalene
  • dibenzofuran phenothiazine
  • carbazole carbazole
  • a compound having an aromatic tertiary amine as a skeleton, a condensed polycyclic compound, and an alkali metal are more preferable because the carrier concentration can be increased more effectively.
  • the hole blocking layer the same materials as those described above as the electron transport layer 15 and the electron injection layer can be used.
  • the above materials are used as solvents.
  • a coating liquid for forming an organic EL layer dissolved and dispersed in a coating method such as spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method, ink jet method, letterpress printing method, intaglio printing method .
  • a method of forming by a known wet process such as a printing method such as a screen printing method or a micro gravure coating method, or a resistance heating vapor deposition method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method.
  • EB electron beam
  • MBE molecular beam epitaxy
  • a method of forming by a known dry process such as sputtering, organic vapor deposition (OVPD), or a method of forming by laser transfer. Rukoto can.
  • the organic EL layer 17 is formed by a wet process, the organic EL layer forming coating solution may contain additives for adjusting the physical properties of the coating solution, such as a leveling agent and a viscosity modifier. .
  • the film thickness of each layer constituting the organic EL layer 17 is usually about 1 to 1000 nm, and more preferably 10 to 200 nm. If the thickness of each layer constituting the organic EL layer 17 is less than 10 nm, the properties (charge (electron, hole) injection characteristics, transport characteristics, confinement characteristics) that are originally required may not be obtained. . In addition, pixel defects due to foreign matters such as dust may occur. Furthermore, when the thickness of each layer constituting the organic EL layer 17 exceeds 200 nm, the drive voltage increases, which may lead to an increase in power consumption.
  • the first electrode 12 and the second electrode 16 in the organic EL element 10 are reflective electrodes having light reflectivity.
  • the optical film thickness L between the reflective interfaces defined by the pair of reflective electrodes 12 and 16 is set so as to enhance the intensity of light of a specific wavelength among the light emitted from the light emitting layer 14.
  • “light of a specific wavelength” means light in the blue region (wavelength 350 to 500 nm).
  • the optical film thickness L By setting the optical film thickness L in this way, a microcavity effect (multiple reflection interference effect) appears between the first electrode 12 (reflecting electrode) and the second electrode 16 (semi-transparent electrode) which are reflective electrodes. Further, the light extraction efficiency can be improved. More specifically, by setting the optical film thickness L of the organic EL element 10 as described above, the light emitted from the light emitting layer 14 is repeatedly reflected between the first electrode 12 and the second electrode 16 facing each other. At this time, the light in the blue wavelength region is strengthened by the multiple interference, and is emitted from the second electrode 16 toward the phosphor layers 8R and 8G and the functional layer 28B.
  • the intensity of light in the blue region incident on each of the phosphor layers 8R and 8G and the functional layer 28B increases, and the light in the red region and the green surface region that are converted and emitted in each phosphor layer 8R and 8G. Since the amount of light and the amount of light in the blue region that passes through the functional layer 28B increase, good light emission efficiency can be achieved.
  • An inorganic sealing film 5 made of SiO, SiON, SiN or the like is formed so as to cover the upper surface and side surfaces of the organic EL element 10.
  • the inorganic sealing film 5 can be formed by depositing an inorganic film such as SiO, SiON, SiN or the like by plasma CVD, ion plating, ion beam, sputtering, or the like.
  • the inorganic sealing film 5 needs to be light transmissive in order to extract light from the second electrode 16 side of the organic EL element 10.
  • the sealing substrate 9 has the phosphor layers 8 ⁇ / b> R and 8 ⁇ / b> G, the functional layer 28 ⁇ / b> B, and the organic EL element 10 facing each other.
  • a red phosphor layer 8R, a green phosphor layer 8G, and a functional layer 28B that are partitioned by the black matrix 7 and arranged in parallel are formed.
  • a sealing material 6 is sealed between the inorganic sealing film 5 and the sealing substrate 9.
  • the red phosphor layer 8 ⁇ / b> R, the green phosphor layer 8 ⁇ / b> G, and the functional layer 28 ⁇ / b> B that are disposed to face the organic EL element 10 are each surrounded by the black matrix 7 and partitioned by the sealing material 6. It is enclosed in an enclosed sealing area.
  • the sealing substrate 9 As the sealing substrate 9, the same thing as the board
  • the sealing substrate 9 is light transmissive. It is necessary to use materials.
  • a conventionally known sealing material can be used for the sealing material 6, and a conventionally known sealing method can also be used as a method for forming the sealing material 6. Specifically, for example, when an inert gas such as nitrogen gas or argon gas is used as the sealing material 6, a method of sealing the inert gas such as nitrogen gas or argon gas with a sealing substrate 9 such as glass. Is mentioned.
  • a moisture absorbent such as barium oxide in the enclosed inert gas because deterioration of the organic EL due to moisture can be effectively reduced.
  • resin curable resin
  • a curable resin (a photocurable resin or a thermosetting resin) is applied onto each of the phosphor layers 8R and 8G and the functional layer 28B using a spin coating method or a laminating method.
  • the sealing material 6 can be formed.
  • the sealing material 6 it is possible to prevent the entry of oxygen and moisture into the organic EL element 10 from the outside, and the life of the organic EL element 10 can be improved.
  • the sealing material 6 needs to have a light transmittance.
  • the red phosphor layer 8R absorbs blue region light emitted from the organic EL element 10 as a light source, converts the light into red region light, and emits red region light to the sealing substrate 9 side.
  • the green phosphor layer 8G absorbs blue region light emitted from the organic EL element 10 as a light source, converts it into green region light, and emits green region light to the sealing substrate 9 side.
  • the functional layer 28B is provided for the purpose of improving the viewing angle characteristics and extraction efficiency of light in the blue region emitted from the organic EL element 10 as a light source, and emits light in the blue region to the sealing substrate 9 side. To do.
  • the functional layer 28B can be omitted.
  • the red phosphor layer 8R and the green phosphor layer 8G (and the functional layer 28B) are provided.
  • the light emitted from the organic EL element 10 is converted, and light of three colors of red, green, and blue is emitted from the sealing substrate 9 side, thereby achieving full color.
  • the transparent particles 28B 1 is formed are dispersed in a binder resin 28B 2.
  • the film thickness of the functional layer 28B is usually 10 to 100 ⁇ m, preferably 20 to 50 ⁇ m.
  • the binder resin 28B 2 used in the functional layer 28B conventionally can be used known ones, is not particularly limited, those having optical transparency is preferable.
  • the transparent particle 28B 1 is not particularly limited as long as it can scatter and transmit light from the organic EL element 10, and for example, polystyrene particles having an average particle size of 25 ⁇ m and a standard deviation of particle size distribution of 1 ⁇ m are used. can do.
  • the content of the transparent particles 28B 1 in the functional layer 28B is can be appropriately changed, not particularly limited.
  • Functional layer 28B is conventionally can be formed by a known method, is not particularly limited, for example, dissolving a binder resin 28B 2 and the transparent particles 28B 1 in the solvent, by using a coating solution prepared by dispersing , Known by coating methods such as spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method, ink jet method, letterpress printing method, intaglio printing method, screen printing method, microgravure coating method, etc. It can be formed by a wet process or the like.
  • the red phosphor layer 8R absorbs and excites light in the blue region emitted from the organic EL element 10, and emits fluorescence in the red region (converts into light having a wavelength different from that of the light source). including.
  • a conventionally known material can be used as the phosphor that converts light in the blue region into light in the red region.
  • cyanine dyes such as 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, 1-ethyl-2- [4- (p-dimethylamino) Pyridine dyes such as phenyl) -1,3-butadienyl] -pyridinium-perchlorate, and rhodamine dyes such as rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101, etc.
  • an inorganic red phosphor because stability such as deterioration due to excitation light and light emission becomes good.
  • the inorganic red phosphor may be subjected to a surface modification treatment if necessary.
  • the method may be a chemical treatment such as a silane coupling agent or a physical treatment by adding fine particles of submicron order. The thing by a process, the thing by those combined use etc. are mentioned.
  • the green phosphor layer 8G absorbs and excites light in the blue region emitted from the organic EL element 10, and emits fluorescence in the green region (converts into light having a wavelength different from that of the light source). including.
  • a conventionally known material can be used as the phosphor that converts light in the blue region into light in the green region.
  • 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153), 3- (2′-benzothiazolyl) ) -7-diethylaminocoumarin (coumarin 6), 3- (2′-benzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7) and other coumarin dyes, basic yellow 51, solvent yellow 11, solvent yellow 116, etc.
  • an inorganic green phosphor since stability such as deterioration due to excitation light and light emission becomes good.
  • the inorganic green phosphor may be subjected to surface modification treatment as necessary, and the method may be by chemical treatment such as a silane coupling agent or by addition of fine particles of submicron order. The thing by physical processing and the thing by those combined use etc. are mentioned.
  • the red phosphor layer 8R and the green phosphor layer 8G may be composed of only the phosphors described above, and may optionally contain additives such as polymers, silica, metal particles, and the like. May be dispersed in an inorganic material such as a binder resin or silica. Among these, those in which a phosphor is dispersed in a binder resin are preferable. A conventionally well-known thing can be used as binder resin, It does not specifically limit. It is preferable to use a photosensitive resin as the binder resin because patterning is possible by a photolithography method.
  • the photosensitive resin one of photosensitive resins having a reactive vinyl group (photo-curable resist material) such as acrylic acid resin, methacrylic acid resin, polyvinyl cinnamate resin, and hard rubber resin.
  • the seeds can be used alone or in combination of two or more.
  • the red phosphor layer 8R and the green phosphor layer 8G can be formed by a conventionally known method.
  • a phosphor layer in which the above-described phosphor and a resin material such as a binder resin are dissolved and dispersed in a solvent.
  • coating liquid spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method and other coating methods, ink jet method, letterpress printing method, intaglio printing method, screen printing method, micro gravure coating method, etc. It can be formed by a wet process such as a printing method.
  • the resistance heating vapor deposition method using the above-described phosphor electron beam (EB) deposition method, molecular beam epitaxy (MBE) method, sputtering method, organic vapor deposition (OVPD: Organic vapor phase) It can also be formed by a known dry process such as a Deposition method or a laser transfer method.
  • red phosphor layer 8R and green phosphor layer 8G are used in which a phosphor is dispersed in a binder resin or an inorganic material
  • the phosphor content in each phosphor layer 8R, 8G The amount is preferably 1 to 50% by mass (or volume%), more preferably 5 to 30% by mass, based on the total amount of the body layers 8R and 8G.
  • the phosphor layer according to the embodiment of the present invention is characterized in that the average particle diameter of the phosphor contained in the phosphor layer is different on the side where the light from the light source is incident and the side where the converted light is emitted. . That is, the red phosphor layer 8R and the green phosphor layer 8G emit fluorescence when the average particle diameter of the phosphors included in the phosphor layers 8R and 8G faces the organic EL element 10 that is a light source. It differs from the sealing substrate 9 side.
  • the average particle diameter of the phosphors included in each of the phosphor layers 8R and 8G is set so that the light emitted from the light source (the side facing the organic EL element 10) emits the converted light (sealed). Setting the stop substrate 9 side (observer side) to be larger is preferable because it enables efficient light extraction.
  • the phosphor usually used is powder, and its particle size is several ⁇ m to several tens ⁇ m, although it depends on the pulverization process.
  • a phosphor layer is formed using a phosphor having such a diameter, light (excitation light) incident from the light source is scattered, so that the efficiency of exciting the phosphor is lowered.
  • the phosphor layer has a small particle size with good light absorption and excitation efficiency on the side where light (excitation light) from the light source is incident. It is possible to excite the phosphor efficiently and to improve the viewing angle characteristics by arranging the phosphor and arranging a phosphor having a large particle size that scatters light on the side from which the light emission (fluorescence) is emitted. The conclusion that it becomes the means to do.
  • an average particle diameter of 10 nm to 10 nm on the incident side of the light (excitation light) from the light source (excitation light side) It is preferable to arrange a phosphor of 1 ⁇ m and a standard deviation of the particle size distribution of 5 to 500 nm. Further, it is preferable to arrange a phosphor having an average particle size of 10 ⁇ m to 50 ⁇ m and a standard deviation of particle size distribution of 3 to 8 ⁇ m on the emission (fluorescence) emission side (fluorescence) from the phosphor.
  • the particle size of the phosphor contained in the phosphor layer is decreased on the excitation light incident side and increased on the fluorescence emission side. Thereby, the effect of the embodiment of the present invention can be produced.
  • the phosphor 18 ⁇ / b > R in the red phosphor layer 8 ⁇ / b > R has the phosphor 18 ⁇ / b > R 1 having a small average particle diameter disposed on the organic EL element 10 side, and the phosphor 18 ⁇ / b > R 2 having a large average particle diameter is the sealing substrate 9. It only has to be arranged on the side. Further, as long as the average particle diameters of the phosphors 18R 1 and 18R 2 satisfy the above-described relationship, about 5% of the phosphor 18R 2 may be included in the region where the phosphors 18R 1 are dispersed. The phosphor 18R 2 may be included phosphor 18R 1 is around 5% in regions dispersed. Similarly to the red phosphor layer 8R, the green phosphor layer 8G may be provided with a phosphor 18G 1 having a small average particle diameter and a phosphor 18G 2 having a large average particle diameter.
  • the film thickness of the red phosphor layer 8R and the green phosphor layer 8G can usually be about 100 nm to 100 ⁇ m, and preferably 1 to 100 ⁇ m.
  • the film thickness of each phosphor layer 8R, 8G is less than 100 nm, the blue light emission from the organic EL element 10 cannot be sufficiently absorbed, the light emission efficiency is lowered, or the blue light transmitted to the converted fluorescence is transmitted. There is a possibility that the color purity is deteriorated due to the mixing. Further, if the thickness of each phosphor layer 8R, 8G exceeds 100 ⁇ m, the blue light emission from the organic EL element 10 is already sufficiently absorbed, so that the efficiency is not increased and only the consumption of the material is produced.
  • each phosphor layer 8R, 8G is set to 1 ⁇ m or more. It is preferable to do.
  • FIG. 2 is a schematic cross-sectional view showing another example of the phosphor display device according to the present embodiment.
  • the red phosphor layer 8R is disposed on the first red phosphor layer 8R 1 including the phosphor 18R 1 having a small average particle diameter disposed on the organic EL element 10 side, and on the sealing substrate 9 side. It is preferable to have a two-layer structure including the second red phosphor layer 8R 2 including the phosphor 18R 2 having a large average particle diameter.
  • each layer can be sequentially stacked on the sealing substrate 9, so that the distribution and arrangement of the phosphors 18R 1 and 18R 2 in the red phosphor layer 8R are controlled.
  • the light extraction efficiency can be improved.
  • the phosphor 18R 1 preferably has an average particle size of 10 nm to 1 ⁇ m and a standard deviation of the particle size distribution of 3 to 300 nm.
  • the phosphor 18R 2 preferably has an average particle size of 10 ⁇ m to 50 ⁇ m and a standard deviation of particle size distribution of 3 to 8 ⁇ m.
  • Red phosphor layer 8R is, if the first red phosphor layer 8R 1 and a laminated structure of the second red phosphor layer 8R 2, the thickness of the first red phosphor layer 8R 1 shall be 1 ⁇ 70 [mu] m It is preferably 5 to 30 ⁇ m.
  • the thickness of the second red phosphor layer 8R 2 is preferably set to 50 ⁇ 100 [mu] m, and more preferably set near 50 ⁇ m is the particle size as possible phosphor.
  • the green phosphor layer 8G is disposed on the first phosphor layer including the phosphor having a small average particle diameter disposed on the organic EL element 10 side and on the sealing substrate 9 side. It is preferable to have a two-layer structure including a second phosphor layer containing a phosphor having a large average particle diameter.
  • the film thickness of the first phosphor layer and the second phosphor layer, the particle size and content of the phosphor contained in each layer, and the method for forming each layer are the same as those for the first red phosphor layer 8R 1 and the first phosphor layer described above. it can be similar to second red phosphor layer 8R 2.
  • the black matrix 7 is formed between the respective phosphor layers and functional layers adjacent to the respective phosphor layers 8R and 8G and the functional layer 28B.
  • the black matrix 7 conventionally known materials and forming methods can be used, and are not particularly limited. Among them, light that is incident on and scattered by the phosphor layers 8R and 8G and the functional layer 28B is further reflected to the phosphor layers 8R and 8G and the functional layer 28B, for example, has light reflectivity. It is preferably formed of metal or the like.
  • the surfaces of the red phosphor layer 8R, the green phosphor layer 8G, and the functional layer 28B on the side opposite to the sealing substrate 9 are flattened by a flattening film or the like (not shown). This can prevent depletion between the organic EL element 10 and each of the phosphor layers 8R and 8G and the functional layer 28B, and the organic EL element 10, the substrate 1, and each phosphor layer 8R. 8G, the functional layer 28B, the adhesion between the sealing substrate 9 and the sealing material 6 can be increased.
  • the planarizing film the same one as the planarizing film 4 described above can be used.
  • the phosphor display devices 20 and 20B of the present embodiment are provided with a polarizing plate on the light extraction side (on the sealing substrate 9).
  • a polarizing plate a combination of a conventionally known linearly polarizing plate and a ⁇ / 4 plate can be used.
  • a polarizing plate it is possible to prevent external light reflection from the first electrode 12 and the second electrode 16 and external light reflection on the surface of the substrate 1 or the sealing substrate 9.
  • the contrast of the display devices 20 and 20B can be improved.
  • the phosphor display devices 20 and 20B of the present embodiment in the phosphor layer for color-converting the light emitted from the organic EL element 10 as a light source, the fluorescence having a small average particle diameter on the side on which the excitation light from the light source is incident. And a phosphor having a large average particle diameter is arranged on the side from which fluorescence is emitted.
  • FIG. 3 is a schematic sectional view showing an example of the phosphor display device according to the second embodiment of the present invention.
  • the same components as those of the phosphor display devices 20 and 20B of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the phosphor display device 30 of the present embodiment includes a red phosphor layer 8R, a green phosphor layer 8G, a functional layer 28B, and a sealing substrate 9 in addition to the configuration of the phosphor display device 20B of the first embodiment. Color filters 21R, 21G, and 21B are interposed therebetween.
  • the color filters 21R, 21G, and 21B are formed on the light extraction side (sealing substrate 9 side) corresponding to the color of light emitted from the phosphor layers 8R and 8G and the functional layer 28B.
  • a red color filter 21R is provided on the fluorescence emission side of the red phosphor layer 8R
  • a green color filter 21G is provided on the fluorescence emission side of the green phosphor layer 8G
  • the organic EL of the functional layer 28B is provided.
  • a blue color filter 21B is provided on the side from which light emission (blue light) is emitted from the element 10.
  • the color filters 21R, 21G, and 21B are not particularly limited, and conventionally known color filters can be used.
  • the color filters 21R, 21G, and 21B can be formed by a conventionally known method, and the film thickness can be adjusted as appropriate.
  • the phosphor display device 30 is provided by providing the color filters 21R, 21G, and 21B between the sealing substrate 9 on the light extraction side (observer side), the phosphor layers 8R and 8G, and the functional layer 28. It is possible to increase the color purity of red, green, and blue emitted from the fluorescent light, and the color reproduction range of the phosphor display device 30 can be expanded.
  • the red color filter 21R formed on the red phosphor layer 8R and the green color filter 21G formed on the green phosphor layer 8G absorb the blue component and the ultraviolet component of external light. Therefore, it is possible to reduce and prevent light emission of the phosphor layers 8R and 8G due to external light, and it is possible to reduce and prevent a decrease in contrast.
  • FIG. 3 shows an example in which the functional layer 28B is used as a pixel that emits blue
  • the present embodiment is not limited to this.
  • the blue color filter 21B is provided on the sealing substrate 9 so as to correspond to the position of the pixel that emits blue, and the blue color light emitted from the organic EL element 10 is converted into the blue color filter. You may make it radiate
  • the red phosphor layer 8R and the red color filter 21R are stacked. However, the red phosphor layer 8R and the red color filter 21R may be integrated to form a red phosphor layer. good.
  • the green phosphor layer 8 ⁇ / b> R and the green color filter 21 ⁇ / b> R may be integrated into a phosphor layer as described above.
  • FIG. 4 is a schematic sectional view showing an example of the phosphor display device according to the third embodiment of the present invention.
  • the same components as those of the phosphor display devices 20 and 20B of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the phosphor display device 40 shown in FIG. 4 includes a light emitting diode (hereinafter abbreviated as “blue LED”) 41 that emits blue light instead of the organic EL element 10 as a light source in the first and second embodiments. The difference is that the light guide member 41A is used.
  • liquid crystal including liquid crystal as light control means capable of controlling blocking and transmission of light emitted from the blue LED 41 as a light source between the blue LED 41 and each of the phosphor layers 8R and 8G and the functional layer 28B.
  • the difference is that the layer 42 is disposed.
  • a blue LED 41 as a light source is provided on each pixel (each phosphor layer 8R, 8G) on the side opposite to the sealing substrate 9 on the light extraction side (observer side).
  • a polarizing plate 47a, a TFT substrate 44, an electrode 45, an alignment film 43a, a liquid crystal layer 42, an alignment film 43b, a substrate 46, and a polarizing plate 47b are stacked above the light emitting portion 4a of the light guide member 41A including the blue LED 41.
  • a red phosphor layer 8R, a green phosphor layer 8G, a functional layer 28, and a sealing substrate 9 that are surrounded by the sealing material 6 are formed.
  • the light guide member 41A provided with the light guide part 4b and the light emitting part 4a is configured such that a blue LED 41 is arranged at one end of the light guide part 4b, and a plurality of adjacent light guide parts 4b and light emitting parts 4a are overlapped.
  • the polarizing plates 47a and 47b the same materials as those described in the first embodiment can be used.
  • the TFT substrate 44 a combination of the substrate 1 and the TFT circuit 2 of the first embodiment described above can be used.
  • substrate 46 the thing similar to the thing quoted by the board
  • the electrode 45 those mentioned in the first electrode 12 and the second electrode 13 of the first embodiment can be used, and there are no particular restrictions on the material as long as it is a metallic material with low electrical resistance.
  • the material for example, aluminum , Chromium, copper or the like.
  • the electrode 45 needs to be light transmissive in order to transmit light of the blue LED 41 that is a light source.
  • the liquid crystal layer 42 includes a liquid crystal, and a conventionally known one can be used.
  • the alignment films 43a and 43b are films having a function of aligning liquid crystals, and conventionally known films can be used.
  • As the alignment films 43a and 43b for example, a polymer material such as polyimide can be used.
  • the phosphor display device 40 of the present embodiment includes the red phosphor layer 8R and the green phosphor layer 8G according to the above-described embodiment of the present invention. Therefore, as in the first and second embodiments, highly efficient fluorescence conversion can be realized, the light extraction efficiency can be improved, and good viewing angle characteristics can be obtained.
  • FIG. 4 shows an example in which the functional layer 28B is used as a pixel emitting blue
  • the present embodiment is not limited to this.
  • the blue color filter 21B is provided on the sealing substrate 9 so as to correspond to the position of the pixel that emits blue, and the light emitted from the blue LED is transmitted through the blue color filter 21B. You may make it radiate
  • color filters 21R, 21G, and 21B may be interposed between the sealing substrate 9 and the sealing substrate 9, respectively.
  • the fluorescent substance display apparatus 40B of such a structure By setting it as the fluorescent substance display apparatus 40B of such a structure, the color purity of the red, green, and blue light radiate
  • 4 and 5 show an example in which the light guide member 41A including the blue LED 41 is arranged corresponding to the position of each pixel (each phosphor layer 8R, 8G) and the functional layer 28.
  • the embodiment is not limited to this example.
  • the arrangement, size, and shape of the light guide member 41A are not limited as long as the light emitted from the blue LED 41 can be applied to the liquid crystal layer 42, the phosphor layers 8R, 8G, and the functional layer 28B.
  • the present invention is not limited to the above embodiment.
  • the method for driving the organic EL element and the liquid crystal layer (liquid crystal element) is not particularly limited, and the active driving method or the passive driving method may be used, but the organic EL element is active. It is preferable to drive by a driving method. Employing the active drive method is preferable because the light emission time of the organic EL element can be extended compared to the passive drive method, the drive voltage for obtaining a desired luminance can be reduced, and the power consumption can be reduced.
  • Example 1 The phosphor display device 20B shown in FIG. 2 was produced by the following procedure.
  • a reflective electrode is formed on a 0.7 mm thick glass substrate by a sputtering method so that silver has a thickness of 100 nm, and indium-tin oxide (ITO) is formed thereon by a sputtering method so that the thickness becomes 20 nm.
  • a reflective electrode (anode) was formed as the first electrode.
  • the first electrode was patterned into 90 stripes having a width of 2 mm by a conventional photolithography method.
  • SiO 2 was deposited to 200 nm on the first electrode by a sputtering method, and patterned to cover the edge portion of the first electrode by a conventional photolithography method to form an edge cover.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 . Subsequently, this was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 100 ° C. for 1 hour.
  • the dried substrate was fixed to a substrate holder in an in-line resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less.
  • Each organic layer was formed.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • NPD N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine
  • a hole transport layer having a film thickness of 40 nm was formed on the hole injection layer by resistance heating vapor deposition.
  • a blue organic light emitting layer (thickness: 30 nm) was formed on a desired blue light emitting pixel on the hole transport layer.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium ( III) (FIrpic) (blue phosphorescent light emitting dopant) was prepared by co-evaporation at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • a hole blocking layer (thickness: 10 nm) was formed on the blue organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and then tris.
  • An electron transport layer (thickness: 30 nm) was formed using (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the substrate on which the electron injection layer was formed as described above was fixed in a metal deposition chamber.
  • a shadow mask for forming the second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction opposite to the stripe of the first electrode manufactured in the above-described process);
  • the substrate was aligned.
  • magnesium and silver are co-deposited on the surface of the electron injection layer at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, by a vacuum evaporation method to form magnesium silver in a desired pattern (thickness: 1 nm).
  • the second electrode was formed.
  • the produced organic EL element exhibits a microcavity effect between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and can increase the front luminance, and emit light from the organic EL element. Energy can be more efficiently propagated to the phosphor layer and the orientation enhancement layer.
  • the emission peak was adjusted to 460 nm and the half width to 50 nm by the microcavity effect.
  • an inorganic sealing film made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions by a plasma CVD method.
  • an organic EL element substrate was produced.
  • the red phosphor layer forming coating liquid includes a first red phosphor layer forming coating liquid having a normal distribution in which the phosphor particle diameter is 500 nm and the standard deviation ⁇ is 170 nm;
  • Two types of coating liquids for forming a second red phosphor layer having a diameter of 30 ⁇ m and a normal distribution with a standard deviation ⁇ of 6.5 ⁇ m were prepared.
  • the prepared second red phosphor layer forming coating solution is printed and applied at a desired position with a width of 3 mm on a glass substrate having a thickness of 0.7 mm by screen printing, and then the first red phosphor layer is applied.
  • a layer forming coating solution was printed and applied.
  • a red phosphor layer in which a 50 ⁇ m thick second red phosphor layer and a 50 ⁇ m thick first red phosphor layer were sequentially laminated was formed on a glass substrate by heating and drying in a vacuum oven.
  • a coating solution was prepared.
  • the green phosphor layer forming coating solution includes a first green phosphor layer forming coating solution having a normal distribution in which the phosphor particle diameter is 500 nm and the standard deviation ⁇ is 170 nm; Two types of coating solutions for forming a second green phosphor layer having a diameter of 30 ⁇ m and a normal distribution with a standard deviation ⁇ of 6.5 ⁇ m were prepared. Next, the prepared second green phosphor layer forming coating solution is printed and applied at a desired position with a width of 3 mm on the glass substrate on which the red phosphor layer is formed by the screen printing method. A green phosphor layer forming coating solution was printed and applied.
  • a green phosphor layer in which a second green phosphor layer having a thickness of 50 ⁇ m and a first green phosphor layer having a thickness of 50 ⁇ m were sequentially laminated was formed on the glass substrate by heating and drying in a vacuum oven.
  • a functional layer was formed where the blue pixels were arranged.
  • the produced functional layer forming coating solution was applied to a desired position with a width of 3 mm on the glass substrate on which the red phosphor layer and the green phosphor layer were formed by the screen printing method. Subsequently, by heating and drying in a vacuum oven, a functional layer having a thickness of 50 ⁇ m was formed where the blue pixels were arranged. Thus, a phosphor substrate was produced.
  • the organic EL element substrate and the phosphor substrate prepared above were aligned using an alignment marker formed outside the display unit.
  • a thermosetting resin was applied to the phosphor substrate in advance, and both substrates were brought into close contact with each other through the thermosetting resin, and cured by heating at 90 ° C. for 2 hours.
  • the bonding process of both the substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) for the purpose of preventing deterioration of the organic EL element due to water.
  • a phosphor display device was fabricated by connecting terminals formed in the periphery to an external power source.
  • a desired good image could be obtained by applying a desired current to the desired stripe-shaped electrode from an external power source to the manufactured phosphor display device.
  • the phosphor of Comparative Example 1 using a phosphor layer (a red phosphor layer and a green phosphor layer) composed only of a phosphor composed of a normal distribution having an average particle size of 30 ⁇ m and a standard deviation ⁇ of 6.5 ⁇ m.
  • the luminance is directed in the front direction.
  • the phosphor display device obtained in Example 1 showed a luminance distribution of Lambertian in which the luminance was uniformly distributed over all viewing angles, and showed favorable viewing angle characteristics.
  • the average luminance of the phosphor display device of Example 1 was improved by about 5 to 10% as compared with that of Comparative Example 1.
  • Example 2 The phosphor display device shown in FIG. 3 was produced.
  • the phosphor display device of Example 2 is significantly different from Example 1 in that a red phosphor layer, a green phosphor layer, and a functional layer are formed on a color filter substrate in which a color filter is formed on a glass substrate. is there.
  • the other structure is the same as that of Example 1, and the red phosphor layer and the green phosphor layer are arranged such that the first phosphor layer having a thickness of 20 ⁇ m arranged on the light incident side has an average particle diameter of 70 nm and a standard deviation ⁇ .
  • Example 2 The phosphor display device shown in FIG. 3 was produced.
  • the phosphor display device of Example 2 is significantly different from Example 1 in that a red phosphor layer, a green phosphor layer, and a functional layer are formed on a color filter substrate in which a color filter is formed on a glass substrate. is there.
  • the other structure is the same as that of Example 1, and the red phospho
  • the second phosphor layer having a thickness of 70 ⁇ m disposed on the emission side of the fluorescence was prepared so as to include a phosphor composed of a normal distribution having an average particle diameter of 50 ⁇ m and a standard deviation ⁇ of 5.0 ⁇ m.
  • a desired good image could be obtained by applying a desired current to a desired stripe-shaped electrode from an external power source to the manufactured phosphor display device.
  • the phosphor display device obtained in Example 2 showed a Lambertian luminance distribution in which the luminance was uniformly distributed over all viewing angles, and showed good viewing angle characteristics. Further, the average luminance of the phosphor display device of Example 2 was improved by about 3 to 8% as compared with that of Comparative Example 2. In addition, in the phosphor display device of Example 2, it was possible to control light emission by external light and obtain a display with good contrast.
  • Example 3 The phosphor display device shown in FIG. 4 was produced.
  • the phosphor display device of Example 3 is significantly different from Example 1 in that a blue light emitting diode (LED) is used as a light source (excitation light) instead of light emitted from the organic EL element, and the excitation light is blocked. And the transmission was performed in the liquid crystal element (liquid crystal layer).
  • the other structures are almost the same as those in Example 1.
  • the red phosphor layer and the green phosphor layer have a 10 ⁇ m-thick first phosphor layer arranged on the light incident side and an average particle diameter of 10 nm and a standard deviation.
  • the phosphor was prepared so as to include a phosphor having a normal distribution with ⁇ of 5.0 nm.
  • the second phosphor layer having a thickness of 60 ⁇ m disposed on the emission side of the fluorescence was prepared so as to include a phosphor composed of a normal distribution having an average particle diameter of 25 ⁇ m and a standard deviation ⁇ of 5.0 ⁇ m.
  • the liquid crystal element was produced by the following procedure.
  • a scan electrode made of Al was formed on an unpolished glass substrate. Further, the surface of the scan electrode was covered with an alumina film which is an anodic oxide film of Al. Next, a gate insulating (gate SiN) film and an amorphous silicon (a-Si) film were formed so as to cover the scanning electrodes.
  • An n-type a-Si film, a pixel electrode, and a signal electrode were formed on the a-Si film. Further, a common electrode is provided in the same layer as the pixel electrode and the signal electrode.
  • the pixel electrode and the signal electrode are both parallel to the stripe-shaped common electrode and intersect with the scanning electrode, and a thin film transistor and a metal electrode group are formed on one substrate.
  • an electric field is applied between the pixel electrode on one substrate and the common electrode, and the direction thereof is substantially parallel to the substrate interface, whereby an IPS (In-Plane Switching) liquid crystal element is obtained.
  • the pixel electrode, the signal electrode, and the common electrode were all formed from aluminum.
  • the number of pixels was 40 ( ⁇ 3) ⁇ 30, and the horizontal direction (that is, between the common electrodes) of the pixel pitch was 80 ⁇ m, and the vertical direction (that is, between the gate electrodes) was 240 ⁇ m.
  • the width of the common electrode was 12 ⁇ m, which was narrower than the 68 ⁇ m gap between adjacent common electrodes, and a high aperture ratio was secured. Further, on the substrate opposite to the substrate having the thin film transistor, only the polarizing plate having the polarization axis orthogonal to the polarizing plate provided on the TFT substrate was provided.
  • the major axis directions of the liquid crystal molecules in the vicinity of the upper and lower interfaces were substantially parallel to each other, and the angle formed with the applied electric field direction was 15 degrees.
  • the cell gap was 3.8 ⁇ m in the liquid crystal sealed state.
  • the panel is sandwiched between two polarizing plates (G1220DU manufactured by Nitto Denko Corporation), and the polarization transmission axis of one polarizing plate is made substantially parallel to the rubbing direction (the liquid crystal molecule major axis direction in the vicinity of the interface), and the other is orthogonal to it. did. Thereby, normally closed characteristics were obtained.
  • liquid crystal having positive dielectric anisotropy composed mainly of a compound having three fluoro groups at its ends was sealed.
  • a driving LSI was connected to the phosphor display device thus fabricated, and active matrix driving was performed.
  • a desired good image could be obtained by applying a desired voltage to a desired pixel electrode from an external power source to the manufactured phosphor display device.
  • Comparative Example 3 using a phosphor layer (a red phosphor layer, a green phosphor layer) composed only of a phosphor composed of a normal distribution having an average particle size of 25 ⁇ m and a standard deviation ⁇ of 5.0 ⁇ m.
  • the phosphor display device shows a Lambertian luminance distribution in which the luminance is uniformly distributed in all viewing angles in the phosphor display device obtained in Example 3, and has a good field of view. Angular characteristics are shown.
  • the average luminance of the phosphor display device of Example 3 was improved by approximately 15 to 20% as compared with that of Comparative Example 3.
  • Example 4 The phosphor display device shown in FIG. 5 was produced.
  • the phosphor display device of Example 4 is significantly different from Example 3 in that a red phosphor layer, a green phosphor layer, and a functional layer are formed on a color filter substrate in which a color filter is formed on a glass substrate. is there.
  • the other structure is almost the same as in Example 3.
  • the red phosphor layer and the green phosphor layer have a 10 ⁇ m-thick first phosphor layer arranged on the light incident side and an average particle diameter of 30 nm and a standard deviation.
  • the phosphor was prepared so as to include a phosphor having a normal distribution with ⁇ of 10.5 nm.
  • the second phosphor layer having a thickness of 90 ⁇ m disposed on the emission side of the fluorescence was prepared so as to include a phosphor composed of a normal distribution with an average particle size of 30 ⁇ m and a standard deviation ⁇ of 7.5 ⁇ m.
  • a desired good image could be obtained by applying a desired current to the desired stripe-shaped electrode from an external power source to the manufactured phosphor display device.
  • Comparative Example 4 using a phosphor layer (a red phosphor layer or a green phosphor layer) composed only of a phosphor composed of a normal distribution having an average particle size of 30 ⁇ m and a standard deviation ⁇ of 7.5 ⁇ m.
  • the phosphor display device shows a Lambertian luminance distribution in which the luminance is uniformly distributed over all viewing angles in the phosphor display device obtained in Example 2, and has a good field of view. Angular characteristics are shown.
  • the average luminance of the phosphor display device of Example 4 was improved by about 5 to 10% as compared with that of Comparative Example 4.
  • light emission by external light could be controlled, and a display with good contrast could be obtained.
  • the present invention can be applied to a phosphor display device, a phosphor layer, and the like having high efficiency fluorescence conversion (light extraction efficiency) and good viewing angle characteristics.

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Abstract

L'invention porte sur une couche de matériau fluorescent, qui contient un matériau fluorescent qui peut convertir une lumière émise à partir d'une source de lumière en une lumière ayant une longueur d'onde différente, le diamètre de particules moyen du matériau fluorescent sur un côté sur lequel entre une lumière émise à partir de la source de lumière étant différent de celui sur un côté à partir duquel une lumière convertie est éjectée.
PCT/JP2011/059371 2010-05-19 2011-04-15 Dispositif d'affichage à matériau fluorescent, et couche de matériau fluorescent WO2011145418A1 (fr)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207436A (ja) * 2013-03-18 2014-10-30 日本碍子株式会社 波長変換体
JP2018509647A (ja) * 2015-03-23 2018-04-05 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ フォトルミネセンス・カラーディスプレイ
JPWO2017077739A1 (ja) * 2015-11-04 2018-07-26 シャープ株式会社 発光体、発光装置、照明装置、および発光体の製造方法
JP2019502954A (ja) * 2015-12-23 2019-01-31 アファンタマ アクチェンゲゼルシャフト ディスプレイデバイス
WO2019026826A1 (fr) * 2017-08-03 2019-02-07 株式会社ブイ・テクノロジー Panneau d'affichage à led de type pleine couleur
CN109782516A (zh) * 2017-11-15 2019-05-21 中强光电股份有限公司 投影机及波长转换元件
WO2019234555A1 (fr) * 2018-06-06 2019-12-12 株式会社半導体エネルギー研究所 Panneau d'affichage, dispositif d'affichage, dispositif d'entrée/sortie et dispositif de traitement d'informations
US20210074770A1 (en) * 2019-09-09 2021-03-11 Samsung Display Co., Ltd. Color filter unit and display apparatus including the same
EP4301115A3 (fr) * 2017-12-27 2024-03-20 LG Display Co., Ltd. Dispositif d'affichage

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071357A (ja) * 2002-08-06 2004-03-04 Shigeo Fujita 照明装置
JP2004228464A (ja) * 2003-01-27 2004-08-12 Rohm Co Ltd 半導体発光装置
JP2006236898A (ja) * 2005-02-28 2006-09-07 Fuji Electric Holdings Co Ltd 色変換フィルター基板及び色変換フィルターを具備した有機発光素子
JP2006308859A (ja) * 2005-04-28 2006-11-09 Mitsubishi Chemicals Corp 表示装置
JP2006313902A (ja) * 2005-05-02 2006-11-16 Samsung Electro Mech Co Ltd 白色発光素子
JP2010015785A (ja) * 2008-07-02 2010-01-21 Fujifilm Corp 発光素子、多色表示装置及び発光素子の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004071357A (ja) * 2002-08-06 2004-03-04 Shigeo Fujita 照明装置
JP2004228464A (ja) * 2003-01-27 2004-08-12 Rohm Co Ltd 半導体発光装置
JP2006236898A (ja) * 2005-02-28 2006-09-07 Fuji Electric Holdings Co Ltd 色変換フィルター基板及び色変換フィルターを具備した有機発光素子
JP2006308859A (ja) * 2005-04-28 2006-11-09 Mitsubishi Chemicals Corp 表示装置
JP2006313902A (ja) * 2005-05-02 2006-11-16 Samsung Electro Mech Co Ltd 白色発光素子
JP2010015785A (ja) * 2008-07-02 2010-01-21 Fujifilm Corp 発光素子、多色表示装置及び発光素子の製造方法

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207436A (ja) * 2013-03-18 2014-10-30 日本碍子株式会社 波長変換体
JP2018509647A (ja) * 2015-03-23 2018-04-05 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ フォトルミネセンス・カラーディスプレイ
JPWO2017077739A1 (ja) * 2015-11-04 2018-07-26 シャープ株式会社 発光体、発光装置、照明装置、および発光体の製造方法
CN112558345A (zh) * 2015-12-23 2021-03-26 凡泰姆股份公司 显示设备
JP2019502954A (ja) * 2015-12-23 2019-01-31 アファンタマ アクチェンゲゼルシャフト ディスプレイデバイス
JP7114784B2 (ja) 2015-12-23 2022-08-08 アファンタマ アクチェンゲゼルシャフト ディスプレイデバイス
JP7014718B2 (ja) 2015-12-23 2022-02-01 アファンタマ アクチェンゲゼルシャフト ディスプレイデバイス
JP2021192098A (ja) * 2015-12-23 2021-12-16 アファンタマ アクチェンゲゼルシャフト ディスプレイデバイス
JP2019028380A (ja) * 2017-08-03 2019-02-21 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル
CN110892470A (zh) * 2017-08-03 2020-03-17 株式会社V技术 全彩led显示面板
WO2019026826A1 (fr) * 2017-08-03 2019-02-07 株式会社ブイ・テクノロジー Panneau d'affichage à led de type pleine couleur
CN109782516A (zh) * 2017-11-15 2019-05-21 中强光电股份有限公司 投影机及波长转换元件
EP4301115A3 (fr) * 2017-12-27 2024-03-20 LG Display Co., Ltd. Dispositif d'affichage
CN112236809A (zh) * 2018-06-06 2021-01-15 株式会社半导体能源研究所 显示面板、显示装置、输入输出装置及数据处理装置
JPWO2019234555A1 (ja) * 2018-06-06 2021-07-08 株式会社半導体エネルギー研究所 表示パネル、表示装置、入出力装置、情報処理装置
WO2019234555A1 (fr) * 2018-06-06 2019-12-12 株式会社半導体エネルギー研究所 Panneau d'affichage, dispositif d'affichage, dispositif d'entrée/sortie et dispositif de traitement d'informations
US11574961B2 (en) 2018-06-06 2023-02-07 Semiconductor Energy Laboratory Co., Ltd. Display panel, display device, input/output device, and data processing device
US11903290B2 (en) 2018-06-06 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Display panel, display device, input/output device, and data processing device
US20210074770A1 (en) * 2019-09-09 2021-03-11 Samsung Display Co., Ltd. Color filter unit and display apparatus including the same
US11770960B2 (en) * 2019-09-09 2023-09-26 Samsung Display Co., Ltd. Color filter unit and display apparatus including the same

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