TW201240183A - Fluorescent substrate and display device and lighting device using the same - Google Patents

Abstract

A fluorescent substrate includes a substrate, a first fluorescent substance layer, and a first intermediate layer. The first fluorescent substance layer generates fluorescence by incident excitation light and emits the generated light from a light emitting surface. The first intermediate layer is provided between the first fluorescent substance layer and the substrate and has a refractive index sloping from a vicinity of the first fluorescent substance layer to a vicinity of the substrate.

Description

201240183 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a phosphor substrate, a display device using the same, and a lighting device. [Prior Art] In recent years, with the high level of informationization in society, the demand for flat panel displays has been increasing. As a flat panel display, it is well known as a liquid crystal display (LCD ' Liquid Crystal Display), a self-luminous type plasma display panel (PDP 'Plasma Display Panel), an inorganic electroluminescence (inorganic EL (Electroluminescence)) display, Electroluminescence (hereinafter also referred to as "organic EL" or "organic LED") displays. Among these flat panel displays, organic EL displays are particularly attracting attention due to self-luminescence. Regarding an organic EL display, a technique of performing animation display by simple matrix driving or an animation display using an active matrix driving using a thin film transistor (hereinafter also referred to as TFT) is known. . In the conventional organic EL display, pixels emitting red light, green light, and blue light are arranged side by side as one unit, and various colors including white are displayed for full color display. In order to realize such an organic EL display, a method of separately coating the respective organic light-emitting layer materials by a masking method using a masking mask to form respective pixels of red, green, and blue is employed. However, in this method, the processing accuracy of the mask is increased, the alignment accuracy of the mask and the substrate is improved, and the size of the mask is increased. Especially in the field of large-scale displays represented by televisions, the 'substrate size' is from the so-called G6 generation (1800 mmx 1500 mm) to the G8 generation 161804.doc 201240183 (2460 mmx2160 _), G1 generation (3〇5〇_χ285〇) In the prior manufacturing method t 'requires a mask equal to or larger than the substrate size, it is necessary to manufacture and process a mask corresponding to a large substrate. The substrate of the mask is made of a very thin metal (general film) Thickness: 5〇nm~i〇〇nm), it is difficult to enlarge the mask. Moreover, due to the masking and processing of the mask corresponding to the large substrate, the processing precision of the mask is reduced. In the case where the alignment accuracy of the mask and the substrate t is lowered, the color mixture between the pixels is caused by the mixing of the different light-emitting layer materials. To prevent such phenomena, it is necessary to increase the width of the insulating layer provided between the pixels. When the pixel area is fixed, the area of the light-emitting portion is reduced. That is, these phenomena cause a decrease in the aperture ratio of the pixel, and the luminance of the organic EL element is lowered, the power consumption is increased, and the lifetime is lowered. Manufacturing method The vapor deposition source is disposed on the lower side of the substrate, and the organic material is deposited from the lower side toward the upper side to form the organic layer. Thus, as the substrate and the mask are enlarged, the mask of the central portion is deflected. The deflection of the mask also becomes the cause of the above-mentioned color mixing. In the extreme case, 'the portion where the organic layer is not formed is generated, and the leakage of the upper and lower electrodes occurs. In the previous method, the mask is covered after a certain number of uses. Since the cover is deteriorated and cannot be used, the enlargement of the mask leads to an increase in the manufacturing cost of the display. Therefore, there has been proposed an EL element including an organic EL material portion that emits light in a blue to blue-green region, and emits an ultraviolet region. The organic EL material portion of the light, the light from the blue region to the blue-green region of the organic EL material portion is emitted as the excitation light, the phosphor material portion of the red light, and the light from the blue region to the blue-green region are the excitation light. A fluorescent material portion that emits green light and a fluorescent material portion that emits blue light by using the light in the ultraviolet region as the excitation light of I61804.doc 201240183 (see Patent Document 1 below). The EL element is coated separately from the above. Compared with the organic element of the type, it can be easily manufactured and is excellent in cost. Similarly, an organic element is proposed which includes an EL light-emitting element portion and a light-resistant layer, and a reflective film is provided on the side of the working layer. Thereby, the light toward the side can be efficiently swept forward (see Patent Document 2 below). Further, a color display device is proposed which is a light source that emits light having a peak wavelength of 400 nm to 500 nm. The liquid crystal display element and the wavelength conversion unit including the phosphor are combined (see Patent Document 3 and Non-Patent Document 1 below). For example, Patent Document 3 describes the following: The light-emitting layer of r, G, and B provided on the outer side of the liquid crystal layer emits light, so that a color display device having high light use efficiency and brightness can be realized. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Non-Patent Document 1] [Non-Patent Document 1] IDW, 09, p. 1001 (2009) [Disclosure] [Problems to be Solved by the Invention] However, the following phenomenon occurs in the above prior art. In the EL element described in Patent Document 1, the light emitted from the phosphor layer is isotropically diffused. Therefore, it is incident on the substrate of the substrate material having a refractive index different from that of the fluorescent material layer 161804.doc 201240183. The 反 split breaks the interface reflection of the S-base material portion, and does not become loss to the outside, so that the obtained luminous efficiency is lowered. Therefore, in order to transmit a specific luminous efficiency, it is necessary to increase the power-on, which is a major cause of an increase in power consumption. In the organic EL device described in Patent Document 2, light emitted toward the light source side cannot be efficiently swept out, and it is difficult to sufficiently improve the light-emitting efficiency. In the color display device described in Patent Document 3, similarly to the above-described Patent Document 1 and Patent Document 2, since the light emitted from the phosphor layer is the same as 1±', the light from the phosphor layer is swept to the outside. When the light & light loss is large, the resulting luminous efficiency is low. An object of one aspect of the present invention is to provide a phosphor substrate which can efficiently illuminate the phosphor emitted from the phosphor layer toward the substrate side, that is, in the light-emitting direction, without being reflected by the interface with the substrate, thereby improving the efficiency. The efficiency of the light from the phosphor layer increases the conversion efficiency. Further, another aspect of the present invention is to provide a display device which is excellent in viewing angle characteristics and can achieve low power consumption by combining the above-described phosphor substrate with an organic EL element, a liquid crystal element or the like. Further, another object of the present invention is to provide a lighting device which is bright and can achieve low power consumption. [Means for Solving the Problem] A phosphor substrate according to an aspect of the present invention includes: a substrate; the first glory layer ' is configured to generate fluorescence by incident excitation light, and emit light generated from the light-emitting surface; and first The intermediate layer is disposed between the first phosphor layer and the substrate and has a refractive index gradient from a vicinity of the first phosphor layer to a vicinity of the substrate. 161804.doc 201240183 The phosphor substrate of one embodiment of the present invention may have a first intermediate layer when the refractive index of the first phosphor layer is n1 and the refractive index of the substrate is "" The refractive index is from the phosphor layer toward the substrate, and is in a gradient in the thickness direction orthogonal to the light-emitting surface in a range of "to the center of the heart." In the phosphor substrate according to the aspect of the invention, the first intermediate layer may be formed of one or more microstructures, and the vicinity of the phosphor layer may be adjacent to the substrate, and the cross-sectional area of the microstructure may be changed. Small shape. The work piece substrate according to one aspect of the present invention may have a substantially conical shape of the minute structure system, and an apex angle of the apex portion of the substantially conical shape may be 45 or less. The phosphor substrate according to one aspect of the present invention may be provided with a protective layer which is provided on the outer surface of the substrate and which has the refractive index gradient in a direction away from the outer surface of the substrate. In the case where the refractive index of the substrate is n3 and the refractive index of air is n4, the protective layer has a refractive index which is away from the outer surface of the substrate. The direction and the gradient in the thickness direction orthogonal to the above-mentioned light-emitting surface in the range of n3 to n4. In the phosphor substrate of the present invention, the protective layer may be formed of one or more microstructures, and may have a shape in which the cross-sectional area of the microstructure is small from the vicinity of the substrate to the vicinity of the outer layer. . The phosphor substrate of one embodiment of the present invention may have a substantially conical shape of the fine structure system and an apex angle 161804.doc 201240183 of the apex portion of the substantially conical shape is 45 or less. In the phosphor substrate of one embodiment of the present invention, a reflective layer may be provided on one or more side surfaces of the phosphor layer. In the phosphor substrate of the first aspect of the present invention, the surface of the first phosphor layer on which the excitation light is incident may be provided with a wavelength selective transmission reflection layer, and the wavelength selective transmission reflection layer may be configured to transmit at least the excitation light. The light of the peak wavelength reflects at least the light of the peak wavelength of the emission of the first phosphor layer. In the phosphor substrate of one aspect of the present invention, the first phosphor layer may include a plurality of second phosphor layers divided into a plurality of corresponding regions, and the first intermediate layer may be formed in the second plurality. The phosphor layer is between the substrate and the substrate. In the phosphor substrate of one aspect of the present invention, the plurality of second phosphor layers may have refractive indices different from each other, and the first intermediate layer may include a second (four) of a plurality of plural regions corresponding to a specific region, the plurality of The second intermediate layer is respectively disposed between the plurality of second phosphor layers and the substrate, and the plurality of second intermediate layers have refractive index gradients different from each other. A display device according to another aspect of the present invention includes the above-described phosphor substrate of one embodiment of the present invention and a light source having a first light-emitting element that emits excitation light that is incident on the first phosphor layer. Further, the display device according to another aspect of the present invention further includes a plurality of pixels including at least a red pixel for performing red light display, a green pixel for performing green light display, and a blue pixel for performing blue light display, and emitting light from the light source as an upward light. The ultraviolet light is used as the second phosphor layer in 161804.doc 201240183. The red pixel is provided with a red phosphor layer that emits red light as the excitation light as the excitation light, and the ultraviolet light is disposed on the green pixel. The excitation light emits a green phosphor layer of green light, and the blue pixel is provided with a blue phosphor layer that emits blue light as the excitation light. The display device according to another aspect of the present invention may further include: a plurality of pixels including at least a red pixel for performing red light display, a green pixel for performing green light display, and a blue pixel for performing blue light display; and a scattering layer. The blue pixel is provided on the blue pixel to scatter the blue light; the blue light as the excitation light is emitted from the light source, and the second phosphor layer is provided with the blue light as the excitation light. The red light layer of red light is emitted. In a display device according to another aspect of the present invention, the light source may include a plurality of first light-emitting elements corresponding to at least each of the red pixel, the green pixel, and the blue pixel, and drive the plural The light source of the active matrix driving method of the plurality of driving elements of the second light emitting element. The display device according to another aspect of the present invention may be configured such that the plurality of driving elements are disposed on the red phosphor layer and the green phosphor layer. And each of the blue working layer and the substrate on which the plurality of driving elements are formed, and each of the red phosphor layer, the green phosphor layer, and the blue phosphor layer The plurality of driving elements emit light in opposite directions. The display device according to another aspect of the present invention may be any one of the above-mentioned light sources including the light source 161S04.doc 201240183 - a polar body, an organic electroluminescent element, or an inorganic electroluminescent element. The display device according to another aspect of the present invention may be configured between (4) between the light source and the phosphor substrate. The liquid crystal element ′ is configured to control the transmittance of light emitted from the light source corresponding to the red pixel, the green pixel, and the blue pixel, and the light source is a planar light source that emits light from the light exit surface. The illuminating device of another aspect includes a phosphor substrate of one embodiment of the present invention and a light source having a light-emitting element that emits excitation light that is irradiated onto the phosphor layer. [Effect of the Invention] According to the aspect of the present invention, it is possible to realize The fluorescent substrate which is emitted from the phosphor layer and which is emitted from the phosphor layer in the direction of the substrate is not reflected by the interface between the phosphor layer and the substrate, and is effectively detached from the substrate. Further, the light incident into the substrate can be prevented from being externally applied to the substrate. A phosphor substrate which is reflected by the interface of the layer and is effectively swept out to the outer layer side. Further, a phosphor substrate which improves the light-pumping efficiency of the phosphor and improves the conversion efficiency can be realized. When a light-emitting board is combined with an organic ELtg device, a liquid crystal element, or the like, a display device having excellent viewing angle characteristics and two display qualities and low power consumption can be realized, and bright and low-cost can be realized. [Embodiment] Hereinafter, the embodiment of the present invention will be described in more detail with reference to the embodiments and examples. However, the embodiment of the present invention is not limited to the embodiments and the embodiment 0 161804.doc 201240183 [ 1A and 1B are views showing a schematic configuration of a display device according to a first embodiment of the present invention. Fig. 1A is a cross-sectional view showing the entire display of the present embodiment. Fig. 1B is a view showing an organic EL device. The cross-sectional view of the main part of the substrate. In the following drawings, in order to facilitate observation of each component, the size scale of the components may be different. The symbol 1 in Fig. 1A is a display device, and the display device 1 includes fluorescent light. The body substrate 2 and the organic EL element substrate 4 (light source) bonded to the phosphor substrate 2 via the planarizing film 3. In the display device 1 of the present embodiment, three of the red, green, and blue displays are respectively displayed. The dot constitutes one pixel as the smallest unit constituting the image. However, in the following description, a point in which red is displayed is referred to as a red pixel PR, a point in which green display is to be referred to as a green pixel PG, and a point in which a blue display is to be referred to as a blue pixel pb. In the first embodiment, the ultraviolet light is emitted from the organic EL element substrate 4 as a light source, and the ultraviolet light is incident on the phosphor substrate 2 as excitation light. The red light of the excitation light 'red pixel PR produces red fluorescence, the green pixel PG produces green fluorescent light, and the blue pixel PB produces blue fluorescent light, and the full color display is performed by the respective color lights. (Fluorescent Substrate) Hereinafter, the phosphor substrate of the present embodiment will be described in detail. In the phosphor substrate 2 of the present embodiment, the light absorbing layer 6 and the phosphor layers 7R, 7G, and 7B are formed by interposing the intermediate layer 10 on the inner surface side (i-th surface) of the substrate 5 to cover the light absorption. The planarizing film 3 is formed in the form of the layer 6 and the phosphor layers 7R, 7G, and 7B. Further, on the outer surface side (second surface) of the substrate 5, in the above 161804.doc

S 12 201240183 A substrate (4) is formed between the substrate 5 and the gas side outside the outer layer of the substrate 5. That is, the protective layer u is formed on the second surface of the substrate 5. Each pixel is provided with a plurality of phosphor layers 7R, 7G, 7B. The plurality of phosphor layers 7R, 7G, and 7B are composed of different phosphor materials to emit light of different colors according to different pixels. Further, the refractive indices of the phosphor materials of the phosphor layers 7R, 7G, and 7B constituting the plurality of materials may be different from each other. The light absorbing layer 6 is made of a material having light absorbing properties and is formed corresponding to a region between adjacent pixels. The contrast of the display can be improved by the light absorbing layer 6. Moreover, by flattening the phosphor layers 7R, 7 (}, and 7B by the planarization film 3, it is possible to prevent the occurrence of a lack of space between the organic EL element 12 and the phosphor layers 7R, 7G, and 7B, and to improve organic £ [Adhesiveness between the element substrate 4 and the phosphor substrate 2. The phosphor layers 7R, 7G, and 7B include, for example, a film having a rectangular shape in plan view, and the side surface thereof is formed on all sides of the above-mentioned camp layer 7R, 7G, and 7B. There is a reflective layer 8. Further, even if the reflective layer 8 is formed only on at least one side surface and not on all of the side faces of the phosphor layers 7R, 7G, and 7B, the following reflection effect can be obtained. Further, in the phosphor layer 7R, In the case of the incident surface (outer surface side) from which the excitation light of the organic EL element substrate 4 (light source) is incident, the wavelength selective transmission and reflection layer 9 is formed on the 7G and 7B. Hereinafter, the fluorescent light of the embodiment is formed. The constituent members of the bulk substrate 2 will be specifically described. "Substrate" The substrate 5' for the phosphor substrate 2 used in the present embodiment is required to 161804.doc 13 201240183 to illuminate the light from the phosphor layers 7R, 7G, and 7B. To the external 'the light-emitting wavelength region of the phosphor For example, the material of the substrate 5 can be transmitted, and examples thereof include an inorganic material substrate containing glass, quartz, or the like, and a plastic substrate including polyethylene terephthalate, polycarbazole, and polyimide. As described above, the present embodiment is not limited to the substrates. Here, it is preferable to use a plastic substrate from the viewpoint of bending or bending without generating stress, and to improve gas barrier properties. In addition, it is more preferable to use a substrate in which an inorganic material is coated on a plastic substrate, thereby eliminating deterioration of the organic EL element due to the passage of moisture which may occur when the plastic substrate is used as the substrate of the organic EL. The phosphor layer 7R, 7G, and 7B of the present embodiment are red phosphor layers 7R which are emitted from the excitation light emitted from the organic EL element 12 that emits ultraviolet light, and emit red light, green light, and blue light, respectively. The green phosphor layer 7G and the blue phosphor layer 7B are formed. Further, if necessary, a phosphor layer emitting blue-green light or yellow light may be added to the pixel. In this case, blue-green light is emitted. The color purity of each pixel of the yellow light is set to a triangle on the chromaticity diagram indicating a color purity of a pixel emitting red light, green light, or blue light, thereby emitting a red color, The display device of the pixels of the green and blue primary colors can increase the color reproducibility. The phosphor layers 7R, 7G, and 7B can be composed only of the phosphor materials exemplified below. The phosphor layers 7R and 7G, 7B may include any additive or the like in the phosphor material exemplified below. The phosphor layers 7r, 7G, and 7B may be configured to disperse the phosphor materials in a polymer material (adhesive resin) or no. 161804. Doc 201240183 In the machine material, as the phosphor material of the present embodiment, a well-known glory material can be used. Such a phosphor material is classified into an organic phosphor material and an inorganic phosphor material. These specific compounds are exemplified below, but the present embodiment is not limited to these materials. Examples of the organic fluorescent material include a styryl-based dye: 1,4-bis(2-mercaptostyryl)benzene, which is a fluorescent dye that converts ultraviolet excitation light into blue light. , trans-4,4·-diphenylstyrylbenzene, coumarin pigment: 7- mercapto-4-mercaptocoumarin. Further, examples of the coloring pigment which converts ultraviolet and blue excitation light into green light include coumarin dyes. 2,3,5,6·1Η, 4H-tetrahydro-8-trifluoromethyl喧Oxazine (9,9a, Ι-gh) coumarin (coumarin 153), 3-(2'-benzothiazole)_7_diethylamine coumarin (coumarin 6), 3-(2 '-Benzimidazole)-7-]^,;^-diethylamine coumarin (coumarin 7), naphthalene diimine pigment: yellow (51), solvent yellow 11, solvent yellow 116, etc. . Further, as a fluorescent pigment which converts ultraviolet and blue excitation light into red light, a cyanine dye: 4-dicyanodecyl-2-methyl-6-(p-monomethylaminobenzene) Ethyl)-4H-〇 〇, ° ratio bite pigment: i_ethyl_2_ [4-(p-diaminophenyl)-i,3-butadienyl]-pyridinium·overgas Acid salt, and rose red pigment: rose red B, rose red 6G, rose red 3B, rose red 101, rose red 110, alkaline purple 11, acid rose red 1〇1 and so on. Further, as the inorganic phosphor material, as a phosphor that converts ultraviolet excitation light into blue light, Sr2P2〇7: Sn4+,

Sr4Al丨4025 : Eu2+, BaMgAl10O17 : Eu2+, SrGa2S4 : Ce3+, CaGa2S4 : Ce3+, (Ba, Sr)(Mg, Mn)Al1Q〇17 : Eu2+, (Sr, Ca, Ba2, OMg)10(PO4)6Cl2 : Eu2+ , BaAl2Si08 : Eu2+, 161804.doc 15· 201240183

Sr2P207 : Eu2+, Sr5(P〇4)3Cl : Eu2+, (Sr, Ca, Ba)5(P04)3Cl : Eu2+, BaMg2Al丨6〇27 : Eu2+, (Ba,Ca)5(P04)3Cl : Eu2+, Ba3MgSi208 : Eu2+, Sr3MgSi208 : Eu2+ and the like. Further, examples of the phosphor that converts ultraviolet and blue excitation light into green light include (BaMg)Al16027: Eu2+, Mn2+, Sr4Al14025: Eu2+, (SrBa)Al12Si208: Eu2+, (BaMg)2Si04: Eu2+, and Y2Si05. : Ce3+, Tb3+, Sr2P207-Sr2B205 : Eu2+, (BaCaMg)5(P04)3Cl : Eu2+, Sr2Si308-2SrCl2 : Eu2+, Zr2Si04, MgAlu019 : Ce3+, Tb3+, Ba2Si04 : Eu2+, Sr2Si04 : Eu2+, (BaSr)Si04 : Eu2+ Wait. Further, examples of the phosphor that converts ultraviolet and blue excitation light into red light include Y202S: Eu3+, YAl〇3: Eu3+, Ca2Y2(Si〇4)6: Eu3+, and LiY9(Si04)602: Eu3+. Γν〇4 : Eu3+, CaS : Ειι3+, Gd2〇3 : Eu3+, Gd202S : Eu3+, Y(p, V)04 : Eu3+, Mg4Ge05 5F : Mn4+,

Mg4Ge06 : Mn4+, K5Eu25 (W04) 6.25, Na5Eu25 (W〇4) 6 25, K5Eu2 5 (Mo04) 6.25, Na5Eu2 5 (Mo〇4) 6 25 and the like. Further, the above-mentioned inorganic phosphor may be subjected to surface modification treatment as needed. Examples of the surface modification method include a chemical processor using a decane coupling agent or the like, a physical processor using a submicron-sized fine particle or the like, and the like. In consideration of the stability of the deterioration of the excitation light, the deterioration of the light emission, etc., an inorganic material is preferably used. Further, in the case of using an inorganic material, the average particle diameter (d5.) is preferably 〇5 (4) to 5 〇μιηβ. If the average particle diameter is 1 μηη or less, the luminous efficiency of the light body is sharply lower and the average particle diameter is When it is 50 μπι or more, it is very difficult to form a flat film, and a deficiency H (four) is formed between the phosphor layer and the organic member, such as a refractive index of 161804.doc _

S 201240183 When the inorganic phosphor layer of the force 2 _ 3 and the organic element u having a refractive index of about 0.7 have a depletion (air layer) having a refractive index of 1.0, the light from the organic EL element 12 cannot be effective. When the inorganic phosphor layer (phosphor layer 7r, 7G 7B) is reached, the luminous efficiency of the phosphor layers 7R, 7G, and 78 is lowered. Further, it is difficult to realize the flattening of the phosphor layers 7R and 7G, and the liquid crystal element is combined as described below. The distance between the electrodes sandwiching the liquid crystal layer is not uniform, and a uniform electric field cannot be applied. The phenomenon that the liquid crystal layer does not operate uniformly. In addition, as the phosphor layer 7R, 7G, and 7B, a coating liquid for forming a phosphor layer obtained by melting the above-described phosphor material and a resin material and dispersing it in a solvent can be used, and the coating method can be carried out by a square coating method, a secondary collapse method, or a knife. Formed by a known wet process such as a coating method such as a coating method, a discharge coating method, or a spray coating method, an inkjet method, a letterpress printing method, a gravure printing method, a screen printing method, or a micro gravure coating method. Or the above materials by electric resistance heating method, electron beam (EB, Electron

Beam) is formed by a known dry process such as a plating method, a molecular beam epitaxy (MBE, Molecular Beam Epitaxy) method, a clock reduction method, an organic vapor phase forging (1) method, or a laser transfer method. The phosphor layers 7R and 7G can be formed by (4) photosensitive resin as the above-mentioned tree (four) material and (iv) photolithography. As the photosensitive resin, a photosensitive resin having a reactive styrene group such as an acrylic resin, a methyl acrylate resin, a polyglycol cinnamic acid I resin, or a hard rubber resin can be used (photohardening) Type or combination of a plurality of types of anti-materials. "The wet process can be performed by the above-described inkjet method, letterpress printing method, gravure printing method, screen printing method, etc., and the resistance heating steaming chain using a shadow mask 161804.doc -17-201240183 method, electron beam (EB ) Known dry process such as vapor deposition method, molecular beam epitaxy (MBE) method, sputtering method, organic vapor phase vapor deposition (OVPD) method, or laser transfer method: etc. Direct patterning of phosphor material The film thickness of the phosphor layers 7R, 7G, and 7B is preferably about 1 〇〇 nm to 100 μηη, more preferably about 1 μηη to 100 μηη. If the film thickness is less than 10 〇 nm, the following modification is particularly preferable. When the organic EL emits blue light, the organic EL light is not sufficiently absorbed, so that the light-emitting efficiency is lowered or the color light is mixed by the blue light transmitted through the desired color light. Therefore, the organic EL element 12 is improved. The absorbing of the illuminating light 'reducing the transmitted light of blue to the extent that the color purity is not adversely affected' is preferably set to a film thickness of 1 μηι or more. Further, if the film thickness exceeds 100 μηι, the blue of the organic EL element 12 Color luminescence is fully absorbed 'will not bring efficiency , Only the material consumption resulting in increased material costs. "Light absorbing layer" of the present embodiment, the labor of the light in the substrate 2, preferably in each of the phosphor layer 7R, 7G, the light absorbing layer 6 is formed between the 7p. Thereby, the contrast can be improved. The light absorbing layer 6 can be formed by a metal material such as chrome or a black resin or the like. The film thickness of the light absorbing layer 6 is preferably about 1 〇〇 nm to 10 0 μηι, more preferably about 1 〇〇 nm to 10 μηι. Further, in order to efficiently illuminate the side faces of the phosphor layers 7R, 7G, and 7 藉 to the outside by the reflective layer 8, the film thickness of the light absorbing layer 6 is preferably thinner than the film of the glory body layer 7R '7G, 7Β. thick. "Reflective layer" The reflective layer 8 of the present embodiment is provided on the side surfaces of the respective phosphor layers, 7G, 78 on the light incident side and the light exit side. Reflective layer 8

161804.doc •18· S 201240183 The function of illuminating the light emitted from the phosphor layers 7R, 7G, and 7B toward the side surface side to the front direction (light-emitting direction). Specifically, examples of the reflective layer 8 include a reflective metal powder such as Al, Ag, Au, Cr, or an alloy thereof, or a structure of a reflective resin film formed of a resin containing the metal particles. However, the embodiment is not limited to the layers. "Wavelength selective transmission reflection layer" The wavelength selective transmission reflection layer 9 of the present embodiment is provided on the phosphor layers 7R, 7G, and 7B, that is, the wavelength selective transmission reflection layer 9 is provided in the phosphor layers 7R, 7G, and 7B. The outer surface side of the incident surface (the side of the organic EL element substrate 4). The wavelength selective transmission reflection layer 9 has a property of transmitting excitation light and reflecting the light emission from the phosphor layers 7R, 7G, and 7B. Here, the term "permeation excitation light" means, in the present embodiment, light that transmits at least the peak wavelength of the excitation light. Further, the reflection of the light emitted from the phosphor layers 7R, 7G, and 7B refers to the reflection of the wavelengths of the respective emission peaks from the phosphor layers 7R, 7G, and 7B. Examples of such a wavelength-selective transmission-reflecting layer include inorganic material substrates including, for example, a dielectric multilayer film, a metal thin film glass, and quartz, and polyethylene terephthalate, polystyrene, polyamidiamine, and the like. A plastic substrate or the like is used, but the embodiment is not limited to the layers. Further, the phosphor layers 7R, 7G, and 7B, i.e., the wavelength selective transmission/reflection layer 9, are planarized by the planarization film 3 as described above. Thereby, it is possible to prevent the organic EL element 12 from being depleted between the phosphor layers 7R, 7G, and 7B, and to improve the adhesion between the organic EL element substrate 4 and the phosphor substrate 2. As a method of forming the planarizing film 3, it is preferable to use a spin coating method β "intermediate layer" before the function as a planarizing film. 161804.doc -19-201240183 The intermediate layer 1 of the present embodiment is as described above. It is disposed between the phosphor layers 7R, 7G, and 7B and the substrate 5. The intermediate layer 1 has a refractive index gradient between the side of the phosphor layers 7R, 7g, and 7B and the side of the substrate 5. That is, in the intermediate layer, the refractive index in the vicinity of the phosphor layers 7R, 7G, and 7B is different from the refractive index in the vicinity of the substrate 5, and the intermediate layer 10 has a refractive index from the vicinity of the phosphor layers 7R, 7G, and 7B to the vicinity of the substrate 5. gradient. The refractive index gradient is preferably such that when the refractive indices of the phosphor layers 7R' 7G and 7B are n1 and the refractive index of the substrate 5 is n2, the phosphor layers 7R, 7G, and 7B are oriented. The substrate 5 gradually changes in the thickness direction orthogonal to the light-emitting surface (surface on the substrate 5 side) of the phosphor layers 7R, 7G, and 7B in the range of n1 to n2. Specifically, the refractive index of the intermediate layer 10 preferably has a stepwise or continuously varying gradient. Here, the refractive index nl of the phosphor layers 7R, 7G, and 7B is, for example, about 2. 〇 to 2 3 . The refractive index n2 of the substrate 5 is, for example, about 15 in the case of a glass substrate. Therefore, the refractive index gradient of the intermediate layer 1 is preferably as follows: from the phosphor layers 7R, 7G, and 7B toward the substrate 5, in a stepwise or continuous manner from about 2·〇 to about 2.3 to about 1.5. Become smaller. With such a configuration, the intermediate layer 10 can have a fluorescent component having a larger angle with respect to the normal direction of the light-emitting surfaces of the phosphor layers 7R, 7G, and 7B as a result of the phosphor layers 7R, 7G, and 7B. The optical loss caused by the total reflection of the interface having the difference in refractive index between the substrates 5 is suppressed to a minimum. As the intermediate layer 1 having such a refractive index gradient, for example, a plurality of layers (materials) having different refractive indices may be laminated in stages or in a continuous layer. 161804.doc • 20· 201240183 = two (2) One or more having a slight inclination in the thickness direction may be formed: a small structure w', and the ratio occupied by the structure is continuous in the thickness direction to form an intermediate layer having a refractive index gradient. In the case of (1), for example, a laminated structure of a TiO 2 layer and a SiO 2 layer can be cited. Further, a laminated structure in which a Mgo layer and a SiO 2 layer, a Zr02 layer and a SiO 2 layer, a p 黯 layer and a Shih ole oil layer are combined may be mentioned. However, the present embodiment is not limited to the combination of these materials. In the case of (7), examples of the material for forming the fine structure include transparent resins such as polyethylene, polypropylene, polycarbonate, and epoxy, and transparent inorganic materials such as SiO 2 and Si 3 N 4 . Further, it is preferable to add a compound having a relatively high refractive index, for example, a metal oxide such as Ti 2 , Cu 2 〇, or Fe 2 〇 3 to the material material towel. However, this embodiment is not limited to these materials. Further, as the above-mentioned fine structure, it is preferable that the wearing area of the minute structure is reduced from the phosphor layers 7R, 7G, and 7B toward the substrate 5. For example, as shown in the perspective view of Fig. 2A, it is preferable to include the conical-shaped minute structure 10a. The minute structure 1〇a may have a substantially conical shape. The intermediate layer 1 having a plurality of such conical-shaped microstructures 1a is formed such that the apex becomes the substrate 5 side as shown in FIG. 1A, and the refractive index is higher in the vicinity of the phosphor layers 7R, 7G, and 7B. It is lower near the substrate 5. In addition, according to the structure, the cross-sectional area of the conical-shaped micro-structure 1〇3 (the cross-sectional area of the surface parallel to the light-emitting surfaces of the phosphors 7R, 7G, and 7B) is directed toward the substrate from the phosphor layers 7R, 7G, and 7B. 5 and continuously smaller, the refractive index of the intermediate layer 连续 is also continuously reduced from the vicinity of the phosphor layers 7R, 7G, and 7B toward the vicinity of the substrate 5. Here, the conical shape formed as the microstructure 10a is as shown in Fig. 2B, 161804.doc • 21·201240183, preferably the apex angle θ formed by the apex portion, that is, the longitudinal section after the cone is cut along the central axis. The apex angle 二 of the square is formed to be larger than 〇〇 and 45. the following. If the apex angle Θ is formed to 45 in this way. Hereinafter, the cross-sectional area of the microstructures 丨〇a is continuously and gradually decreased from the phosphor layers 7R, 7G, and 7B toward the substrate 5, so that the refractive index of the intermediate layer 10 is also from the phosphor layers 7R, 7G, and 7]8. The substrate 5 is continuously and gradually reduced in size. Therefore, the light transmitted through the intermediate layer 1 is substantially absent due to total reflection or the like due to the difference in refractive index in the intermediate layer 1 , and is efficiently emitted to the substrate 5 side. However, the minute structure of the present embodiment is not limited to the conical shape, and for example, the cross section of the microstructure may be curved. Further, a material having a refractive index substantially equal to the refractive index of the substrate 5, and an example of the bonding between the intermediate layer 1A including the fine structure 1A and the substrate 5 can be used. A polysulfuric acid mixture or the like is carried out. "Protective layer" The protective layer of this embodiment is provided between the substrate 5 and the outer layer (e.g., outside air) as described above. The protective layer 11 has a refractive index gradient from the vicinity of the substrate 5 toward the vicinity of the outer layer. The refractive index gradient is preferably such that when the refractive index of the substrate 5 is n3 (=n2) and the refractive index of the outer layer is ^, the substrate 5 faces the outer layer and the above-mentioned camp layer The light-emitting surfaces of 7r, 7g, and π (surfaces on the substrate 5 side) are gradually changed in the thickness direction in the range of nun4. Gp , &# a + The protective layer 11 may also have a refractive index gradient in a direction away from the outer surface of the substrate. Specifically, the refractive index of the protective layer 11 preferably has a gradient of a stepwise or continuous change. 161804.doc

S -22- 201240183 Here, the refractive index n3 (= n2) of the substrate 5 is about 1,500, for example, in the case of a glass substrate. The refractive index n4 of the outer layer is, for example, about 1.0 in the case of the air layer. Therefore, the refractive index gradient of the protective layer U is preferably from about 15 to about 1 自 from the substrate 5 toward the outer layer. The protective layer 丨i can be from the substrate 5 toward the outer layer. The side, that is, the fluorescent component having a larger angle with respect to the normal direction of the light-emitting surface of the substrate 5 in the fluorescent light emitted in the light-emitting direction, due to the difference in refractive index between the substrate 5 and the outer P-layer The optical loss caused by the total reflection of the interface is suppressed to a minimum. The protective layer u having such a refractive index gradient is formed in the same manner as the above-described intermediate layer ι, for example, (1) by laminating or laminating a plurality of layers (materials) having different refractive indices. Further, (7) a microstructure having a slight inclination (10) or more in the thickness direction may be formed, and the ratio of the structure may be continuously changed in the thickness direction to form a protective layer 1 i having a refractive index gradient. In the case of the wide (1), it may be mentioned, for example, that the layered layer and the Si〇2 layer are laminated, and the combination of the Mg0 layer and the Si〇2 layer, the Zr02 layer and the Si〇2 layer, the PMMA layer and the eucalyptus layer, and the like may be mentioned. The laminated structure is formed 'However, the present embodiment is not limited to the combination of these materials. In the case of the If form, the material for forming the above-mentioned minute structure may, for example, be a transparent resin such as polyethylene, polyacrylic acid polyacrylate or epoxide, or a transparent resin such as Si 〇 2 or Sis N 4 . , ^ month... machine. Further, it is preferred to add a compound having a high refractive index to the materials such as Ti02, Cu2, Fe2〇3, etc. 161804.doc • 23- s 201240183 metal oxide. However, this embodiment is not limited to these materials. In addition, as for the fine structure of the intermediate layer 1A, it is preferable that the cross-sectional area of the minute structure is reduced from the vicinity of the substrate 5 toward the vicinity of the outer layer. For example, similarly to the microstructure 10a shown in Fig. 2, it is preferable to include a conical-shaped minute structure. The above-mentioned minute structure may have a substantially conical shape. As shown in FIG. 1A, the protective layer formed with a plurality of such conical-shaped microstructures is arranged such that the vertex side becomes the outer layer side, and the refractive index is higher on the substrate 5 side and on the outer 4 layer side. low. Further, according to this configuration, the cross-sectional area of the conical-shaped minute structure (the cross-sectional area of the surface parallel to the outer surface of the substrate 5) continuously decreases from the substrate 5 toward the outer layer, so that the refractive index of the protective layer u is also from the substrate 5. The outer layer is continuously smaller. Here, the conical shape formed by the minute structure of the protective layer 11 is preferably formed so that the vertex of the apex portion is larger than 〇, similarly to the microstructure 10a of the intermediate layer 10. And 45. the following. If the apex angle θ is formed to 45 in this way. In the following, the cross-sectional area of the microstructure is continuously and gradually decreased from the substrate 5 toward the outer layer. Therefore, the refractive index of the protective layer u is continuously and gradually decreased from the substrate 5 toward the outer layer. Therefore, the light transmitted through the protective layer is substantially free from loss due to total reflection caused by the difference in refractive index in the protective layer 1 and is efficiently emitted to the outer layer side. Further, for the bonding between the protective layer U and the substrate 5, a material having a refractive index substantially equal to the refractive index of the substrate 5, for example, a colorless transparent optical bonding polyoxyxene oil mixture or the like is preferably used. . Next, one of the methods for producing the phosphor substrate 2 having the above configuration is 161804.doc • 24· 201240183 Example A diagram showing the manufacturing steps using the mode is described from ～31. Further, in the example described here, a method of forming the intermediate layer 10 and the protective layer u into a structure including a conical microstructure is employed. When the phosphor substrate 2 is formed, first, as shown in FIG. 3A, an injection molding machine having a concave mold having a concave structure having a conical shape (for example, a apex angle of 30) is used as an intermediate layer. A thin plate-like intermediate layer forming material 31 of 10 precursors. Thereby, an intermediate layer 1 having a plurality of minute conical shapes and having a refractive index gradient is formed as shown in Fig. 3B. Next, the formed intermediate layer 1 is bonded to the substrate 5 by using, for example, a colorless and transparent optical joining material having a refractive index substantially equal to the refractive index of the formed substrate 5. Next, as shown in Fig. 3C, phosphor layers 7R, 7G, and 7B are formed on the intermediate layer 1A using a dispenser. Then, as shown in Fig. 3D, the reflective layer 8a is formed on the phosphor layers 7R, 7G, and 7B by a vacuum evaporation method. Then, the photoresist layer 32 is formed on the reflective layer 8a by spin coating as shown in FIG. 3E. Further, as shown in Fig. 3F, the photoresist layer 32 is subjected to UV exposure using a mask 33, and then developed by a developing solution. A resist pattern 34 is formed as shown in Fig. 3G. Then, wet etching is performed using the above-described resist pattern 34, and the reflective layer 8a on the side opposite to the substrate 5 of the phosphor layers 7R, 7G, and 7B is not removed as shown in Fig. 3H. That is, the reflective layer 8a formed in the vicinity of the top of the phosphor layers 7R, 7B is removed. Thereby, the reflective layer is "set to the reflective layer 8 covering the side faces of the phosphor layers 7R, 7G, 7B as shown in Fig. 8. Then, as shown in Fig. 31, the phosphor layers 7R, 7g, 7B and the reflection are shown. On the layer 8 161804.doc -25· 201240183, the wavelength selective transmission reflection layer 9 is formed by spin coating. Thereafter, the surface of the substrate 5 opposite to the surface on which the phosphor layers 7R, 7G, and 7B are formed is opposite. The protective layer 11 which is produced in the same manner as the intermediate layer 1 贴 is attached to the surface of the phosphor layer substrate 2. (Organic EL element substrate) Next, the display device 1 of the present embodiment is used as a light source. The organic EL element substrate 4 of the present embodiment will be described. The organic EL element substrate 4 of the present embodiment has an anode 13, a hole injection layer 14, and a hole transport layer laminated on one surface of the substrate 22 as shown in FIG. 1B. 15. A plurality of organic EL elements 12 formed by a light-emitting layer 16, a hole blocking layer 17, an electron transport layer 18, an electron injection layer 19, and a cathode 20. The organic EL element 12 constitutes an excitation light source as shown in Fig. 1A. 4. Further, an edge guard is formed to cover the end surface of the anode 13. 21. The organic EL element 12 of the organic EL element substrate 4 of the present embodiment emits ultraviolet light, and the emission peak of the ultraviolet light is preferably 360 nm to 410 nm. Among them, the organic EL element 12 can be used by a known person. The specific configuration of the organic el layer containing at least the organic light-emitting material between the anode 13 and the cathode 20 is not limited to the above. Further, in the following description, the hole injection layer 14 to the electron injection layer may be used in some cases. The layer of 19 is referred to as an organic EL layer. Further, the plurality of organic EL elements 12 are arranged in a matrix corresponding to each of the red pixel PR, the green pixel PG, and the blue pixel PB, and are individually controlled to be turned on and off. The driving method of the plurality of organic EL elements 12 can be an active matrix drive

161804.doc •26· S 201240183 “ can also be a passive matrix drive. A configuration example of an organic EL element substrate using an active matrix method will be described in detail in the second embodiment below. Hereinafter, each constituent element of the organic EL element substrate will be described in detail. As the substrate 22, substantially the same material as the substrate 5 of the phosphor substrate 2 can be used. In other words, examples of the material of the substrate 22 include an inorganic material substrate containing glass or quartz, a plastic substrate containing polyethylene terephthalate, polycarbazole, polystyrene, and a ceramic containing oxidized material. An insulating substrate such as a substrate or a metal substrate containing aluminum (AI) or iron (Fe) or the like, or an insulating material containing yttrium oxide (Si〇2) or an organic insulating material is applied onto the other substrate. The substrate or the substrate on which the surface of the metal substrate including ruthenium or the like is subjected to an insulating treatment by anodization isotropic method is not limited to the substrate. Among them, a plastic substrate or a metal substrate is preferably used from the viewpoint of no stress and being bendable or bendable. Further, it is more preferably a substrate coated with an inorganic material on a plastic substrate or a substrate coated with an inorganic insulating material on the metal substrate. Thereby, the deterioration of the organic EL due to the permeation of moisture which may occur when the plastic substrate is used as the substrate of the organic EIj can be eliminated. Further, it can eliminate the leakage (short circuit) caused by the protrusion of the metal substrate which may occur when the metal substrate is used as the substrate of the organic EL. Furthermore, the film thickness of the organic EL layer is usually very thin, ranging from 1 nm to 200 nm. Left and right, it is well known that the protrusions cause leakage or short circuit of the pixel portion. Since the light from the organic EL layer is emitted from the side opposite to the substrate, the substrate 22 may be transparent or opaque. Next, as the electrode material for forming the anode 13 and the cathode 20, the electrode material can be used for the period 161804.doc • 27-201240183. In the case of the anode 13, from the viewpoint of more efficiently injecting a hole into the light-emitting layer 16, as the transparent electrode material, gold (Au), foil (pt), and nickel (Ni) having a work function of 4.5 eV or more can be cited. And other metals, and oxides containing indium (In) and tin (Sn) (ιτο), tin (Sn) oxide (Sn〇2), indium (In) and Zn (Zn) oxide (ιζο) )Wait. Further, in the case of the cathode 2, lithium (U), calcium (Ca), cesium (Ce), cesium having a work function of 4.5 eV or less can be cited from the viewpoint of more efficiently injecting electrons into the light-emitting layer 16 . (Ba), a metal such as aluminum (A1), or an alloy such as a MgAg alloy or alloy containing the metal. The anode 13 and the cathode 20 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion implantation method, or a resistance heating vapor deposition method, but the present embodiment is not limited to these formation methods. Further, if necessary, the formed electrode may be patterned by a photolithography method or a laser lift-off method, or a patterned electrode may be directly formed by combining with a shadow mask. The film thickness of the anode 13 and the cathode 20 is preferably 50 nm or more. When the film thickness is less than 5 〇 nm, the wiring voltage is increased, and the driving voltage may rise. When the microcavity effect is used for the purpose of improving the color purity, improving the luminous efficiency, and improving the front luminance, when the light from the light-emitting layer 16 is swept from the anode 13 side (the cathode 20 side), it is preferable to use half. The transparent electrode serves as the anode 13 (cathode 20). The material used herein may be a metal translucent electrode unit or a combination of a metal translucent electrode and a transparent electrode material. As the semi-transparent electrode material, silver is preferable from the viewpoint of reflectance and transmittance. The film thickness of the translucent electrode is preferably from 5 nm to 30 nm. When the film thickness is less than 5 nm, the light is not sufficiently reflected, and sufficient interference effect cannot be obtained. 161804.doc -28 - 201240183 In the case where the film thickness exceeds 3 〇 nm, the light transmittance is drastically lowered, which may cause a decrease in brightness and efficiency. Further, it is preferable to use an electrode having a high light reflectance as the electrode on the opposite side to the light exiting side. The electrode material used at this time may, for example, be a combination of a reflective metal electrode such as aluminum, silver, gold, aluminum-lithium gold-aluminum-salt alloy, aluminum-lithium alloy, or a transparent electrode and a reflective metal electrode (reflective electrode). Electrodes, etc. The organic EL layer used in the present embodiment may have a single layer structure of an organic light-emitting layer, or a multilayer structure of an organic light-emitting layer, a charge transport layer, and a charge injection layer. Specifically, the following configuration may be mentioned. The form is not limited by this. 0) Organic light-emitting layer (2) Hole transport layer/organic light-emitting layer (3) Organic light-emitting layer/electron transport layer (4) Hole transport layer/organic light-emitting layer/electron transport layer (5) Hole injection layer/electricity Hole transport layer/organic light-emitting layer/electron transfer layer (6) Hole injection layer/hole transport layer/organic light-emitting layer/electron transport layer/electron injection layer (7) Hole injection layer/hole transport layer/organic Light Emitting Layer / Hole Barrier Layer / Electron Transport Layer (8) Hole Injection Layer / Hole Transport Layer / Organic Light Emitting Layer / Hole Barrier Layer / Electron Transport Layer / Electron Injection Layer (9) Hole Injection Layer / Hole Transport layer/electron barrier layer/organic light-emitting layer/hole barrier layer/electron transport layer/electron injection layer Further, in the present embodiment, the above (8) is employed as shown in FIG. 1B. 161804.doc -29- 201240183 In the above configuration example, each layer of the light-emitting layer, the hole injection layer, the hole transport layer, the hole barrier layer, the electron barrier layer, the electron transport layer, and the electron injection layer may be a single layer structure Alternatively, the organic light-emitting layer may be composed of only the organic light-emitting material exemplified below. The organic light-emitting layer may also be composed of a combination of a light-emitting dopant and a host material. Further, the organic light-emitting layer may optionally contain a hole transporting material, an electron transporting material, an additive (precursor, acceptor, etc.). The organic light-emitting layer may be configured to disperse the materials in a high molecular material (adhesive resin) or an inorganic material. From the viewpoint of luminous efficiency and life, it is preferred that a dopant having luminescent properties is dispersed in the host material. As the organic light-emitting material, a well-known light-emitting material for organic EL can be used. Such a light-emitting material is classified into a low molecular light-emitting material and a high-grade material, and the above-mentioned compounds are exemplified below, but the present embodiment is derived from these materials. λ, the above luminescent material may also be classified into a fluorescent material, a ray material, or the like. In this case, it is preferable to use a phosphorescent material having a high luminous efficiency from the viewpoint of low power consumption. As the dopant for luminescence which is arbitrarily contained in the light-emitting layer, a well-known dopant material for organic EL can be used. As such a dopant material, for example, as an ultraviolet luminescent material, p-terphenyl, 3,5 3 5 4 hexaphenyl, 3,5,3'5 tetra-t-butyl _ couplet 5 may be mentioned. Stupid and so on. Examples of the blue light-emitting material include a fluorescent material such as a styrene derivative, a bismuth 4,6-difluorophenyl group, a π ratio bite, and a N, C2,]n ratio than a bite formate silver double (4, '6, · Difluorophenyl group is called "battery-emitting organic metal complexes such as cuprate silver (III) (FIr6), etc. 161804.doc

S -30- 201240183 Further, as a host material when a dopant is used, a known host material for organic EL can be used. Examples of such a host material include the above-mentioned low molecular light-emitting materials, polymer light-emitting materials, 4, 4, bis (n-caloric) biphenyl, 99•2 (4_monosyl) (CPF), 3, 6 _ bis (triphenylpyrazine) miso (mCP), (PCF) P card saliva derivative, 4-(diphenylphosphine) hydrazine, hydrazine-diphenylaniline (ΗΜ-Α1) and other aniline derivatives , 13 bis(9phenyl | epoxide) benzene (mDPFB), 1,4-bis(9-phenyl -9 quinone 9 yl) benzene (pDpFB), etc., etc., charge injection layer More efficient charge (hole, electron) from the injection of the electrode and transport (injection) to the light-emitting layer, and is classified into a charge injection layer (m-input 'electron injection layer) and charge transport layer (hole) Transport layer electron transport layer). The charge injection transport layer may also be composed only of the charge injection transport material exemplified below. The charge injection transfer layer may also include any additives (precursors, acceptors, etc.) in the electroporation transport material exemplified below: the charge injection transport layer may be configured to disperse the materials in the polymer material (for bonding) Resin) or inorganic material. As the charge injection material, organic coffee, organic light conduction, and a known charge transport material can be used. Such a charge injection transport material is classified into a plasma injection transport material and an electron injection transport material, and specific compounds are exemplified below, but the present embodiment is not limited to these materials. Examples of the hole injection hole transporting material include an oxide such as yttrium oxide, yttrium oxide (Mo〇2), an inorganic p-type semiconductor material Μ compound, and N,N,·bis (3-methylphenyl). )·Ν, the present amine (TPD)H (Naphthyl-Bu W diphenyl-benzidine 161804.doc • 31- 201240183 () Specialized in the aromatic secondary amine compound, knee compound, 啥. Low molecular materials such as compounds, styrylamine compounds, polyaniline (PANI), polyphenylamine-camphorsulfonic acid (PANI_CSA), 3,4_polyethylenedioxythiophene/polystyrene sulfonate (PED〇T/ Pss), poly(trimamine) derivatives (p〇iy_TPD), polystyrene carbazole (pvCz), poly(p-acetylene 乂 ppv), poly(9) stilbene acetylene (PNV), etc. Materials, etc. In order to more efficiently perform the injection and transport of the holes from the anode, the material used as the hole injection layer is preferably the most occupied molecular orbital region than the hole injection transport material used for the hole transport layer. (H〇M〇,

Highest Occupied Molecular Orbital) is a lower energy material. Further, as the hole transport layer, it is preferable to use a material having a higher mobility of the hole than the hole injection transport material used for the hole injection layer. Further, in order to further improve the injection and transportability of the holes, it is preferable to inject the transport material doping receptor into the holes. As the acceptor, a known acceptor material for organic EL can be used. The specific compounds are exemplified below, but the embodiment is not limited to the materials. Examples of the acceptor material include inorganic materials such as Au, Pt, W, Ir, P0C13, AsF6, Cl, Br, I, vanadium oxide (v2〇5), and molybdenum oxide (m〇02), and TCNQ (7, 7). ,8,8,·tetracyanoquinol dimethane), TCNQF4 (tetrafluorotetracyanoquinolidine dioxane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (bicyclodene) a compound having a cyano group such as cyanobenzoquinone or the like, a compound having a nitro group such as TNF (trinitro--), DNF (dinitrofluorenone), tetrafluorobenzene, tetra-p-benzoquinone, tetrabromobenzene Organic materials such as 醌. Among them, a compound having a cyano group such as TCNQ 'TCNQF4, TCNE, HCNB, DDQ or the like is more preferably added by 32-161804.doc 5 201240183 to more effectively increase the concentration of the carrier. Examples of the electron injecting electron transporting material include an inorganic material of an n-type semiconductor, an oxadiazole derivative, a triazole derivative, a thiopyran dioxide derivative, a benzoquinone derivative, a (tetra) derivative, a brewing derivative, and Low molecular materials such as biphenyl brewed derivatives, anthrone derivatives, dibenzofuran derivatives; polymers such as poly(oxadiazole) (P〇ly-〇XZ) and polystyrene derivatives (pss) material. In particular, examples of the electron injecting material include lithium fluoride (LiF), cesium fluoride (fluoride such as BaFd, and oxides such as lithium oxide (Li 2 〇), etc., and more efficient injection of electrons from the cathode. For the purpose of transporting, the material used as the electron/main layer is preferably used in comparison with the electron injecting and transporting material used in the electron transporting layer, and the lowest unoccupied molecular orbital (LUm〇, lowest unoccupied molecular orbital) has a higher energy level. The material used as the electron transport layer is preferably a material having a higher electron mobility than the electron injecting and transporting material used for the electron injecting layer. Further, in order to further improve the injection and transportability of electrons, It is preferable to dope the above-mentioned electron injecting and transporting material. As the precursor, a known precursor material for organic EL can be used. The specific compounds are exemplified below, but the present embodiment is not limited to these materials. The material 'can be enumerated as a metal, a metal such as a rare earth element, an inorganic material such as Ag, Cu, or In, an aniline, a stupid diamine, or a benzidine. Ν,Ν·,Ν·-Tetraphenylbenzidine, N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)benzidine, ν,Ν·-二( (Naphthyl-1-yl)-N,N'-diphenyl-benzidine, etc., triphenylamines (triphenylamine, 4,4'4Π-tris(N,N-diphenyl-161804.doc • 33· 201240183 Amino)-triphenylamine, 4,4'4'-:(N_3_methylphenyl_N_phenylamino)·Trisamine, 4,4′4′-tris(Ν-( 1·naphthyl)·Ν_phenyl-amino)-triphenylamine, etc., tris-diamines (Ν,Ν'-di-(4-methyl-phenyl)·Ν,Ν,_diphenyl a compound having an aromatic tertiary amine on the bone I, a condensed polycyclic compound such as phenanthrene, a flower, a flower, a condensed tetraphenyl or a fused pentabenzene (wherein a condensed polycyclic compound) It may also have an organic material such as a substituent, TTF (tetrathiafulvalene), dibenzofuran, phenothiazine, carbazole, etc. Among them, A has an aromatic tertiary amine on its skeleton. The compound, the condensed polycyclic compound, and the metal test are more preferable because the carrier inversion can be more effectively increased. The light-emitting layer, the hole transport layer, the electron transport layer, and the hole injection are included. And the organic EL layer such as the electron-injecting layer can be applied by a spin coating method, a dipping method, a doctor blade method, a discharge coating method, or the like, by using a coating liquid for forming an organic EL layer in which the above materials are dissolved and dispersed in a solvent. A well-known wet process such as a coating method such as a spray coating method, an inkjet method, a relief printing method, a gravure printing method, a screen printing method, or a micro gravure coating method, or a resistance heating steam using the above materials It is formed by a plating method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) sputtering method, an organic vapor phase distillation (OVPD) method, or the like, or a laser transfer method. When the organic EL layer is formed by a wet process, the coating liquid for forming an organic EL layer may further contain an additive for adjusting the physical properties of the coating liquid, such as a leveling agent or a viscosity modifier. The film thickness of each layer of the above organic EL layer is preferably! Nm~i〇〇〇 nm& 2, more preferably 10 nm~200 If the film thickness is less than 1 〇 nm, the original physical properties cannot be obtained (charge injection characteristics, transport characteristics, and closure characteristics).

S -34· 201240183 (·sheng, etc.). Moreover, there is a possibility that pixel defects occur due to foreign matter such as dust. Further, when the film thickness exceeds 200 nm, the driving voltage rises due to the resistance component of the organic layer, resulting in an increase in power consumption. In the case of the present embodiment, the edge shield 21 is formed for the purpose of preventing leakage between the anode 13 and the cathode 20 at the end of the anode 13. The edge shield 21 can be formed by a known method using an insulating material such as a vapor deposition method, a sputtering method, an ion implantation method, a resistance heating vapor deposition method, or the like, and can be known by a dry method or a wet method. The photolithography method is patterned, but the embodiment is not limited to the formation methods. The material constituting the edge shield 21 can be a known insulating material. However, the present embodiment is not particularly limited, and it is necessary to transmit light. For example, Si〇 'Si〇N, SiN, SiOC, SiC,

HfSiON, ZrO, HfO, La〇, and the like. The film thickness of the edge shield 21 is preferably from 100 nm to 2000 nm. When the film thickness is 1 〇〇 nm or less, the insulating property is insufficient, and electric leakage occurs between the anode 13 and the cathode 20, which causes an increase in power consumption and no light emission. Further, when the film thickness is 2 〇〇〇 nm or more, the film forming process is time consuming, and the productivity is lowered, and the electrode at the edge shroud 21 is broken. The organic EL element 12 preferably includes a microcavity structure (light microresonator structure) caused by an interference effect of a reflective electrode and a translucent electrode serving as the anode 13, the cathode 2, or a dielectric multilayer film. . Thereby, the light from the organic EL element 12 can be concentrated in the front direction (having directivity), and as a result, the light which is dissipated to the surroundings can be reduced, and the luminous efficiency of the front side can be improved. Thereby, the luminescence energy generated in the luminescent layer 16 of the organic EL element 12 can be more efficiently transmitted to the phosphor layers 7R, 7G, and 7B, thereby improving the surface luminance of the positive 161804.doc • 35 - 201240183. Further, by the interference effect, the luminescence spectrum can be adjusted, and the luminescence spectrum can be adjusted by adjusting the desired luminescence peak wavelength and half value width. Thereby, it can be controlled to more effectively excite the spectrum of the work light emitting the respective colors of light. (Effects of the present embodiment) The inventors of the present invention have studied the prior art display device using a phosphor, and have focused on how to make the phosphor emitted from the phosphor layer to the substrate side, that is, the light emitting direction, not to be bonded to the substrate. The interface was effectively reflected off, and after careful efforts, the following composition was considered. In other words, the intermediate layer 10 having a refractive index gradient is provided between the phosphor layers 7R, 7G, and 7B and the substrate 5 according to the phosphor substrate 2 of the present embodiment and the display device 1' using the same. Thus, for example, the refractive index gradient of the intermediate layer 1 缓 is gradually changed from the phosphor layers 7R and 7G' 7B toward the substrate 5 in the thickness direction in the range of n1 to n2. Thereby, the fluorescent component having a larger angle with respect to the normal direction of the light-emitting surface of the phosphor layers 7R, 7G, and 7B as before can be refracted by the phosphor layer 7R, 7G, and 7B and the substrate 5 The loss of light generated by total reflection at the interface of the rate difference is suppressed to a minimum. Thereby, the grazing efficiency of light from the phosphor layers 7R, 7G, and 7B can be improved, and the conversion efficiency can be improved. Moreover, by combining the phosphor substrate 2 and the organic EL element, it is possible to provide an excellent display device which is excellent in viewing angle characteristics and can achieve low power consumption. Here, the pattern diagram of an example of the display device of the prior art as shown in Fig. 13A is generally incident on the phosphor layer 7 from the outside (e.g., the organic EL element 12). 161804.doc • 36·

S 201240183 In the case of illuminating, the luminescence from the fluorescing layer 1 is emitted isotropically from the respective phosphors. Therefore, on the positive side, the component C1 (shown by the line in Fig. 13A) which emits light on the light-emitting side (substrate 5 side) in the plane direction can be swept out to the outside for effective illumination from the technical field J J 1 . However, the cutter C2 (indicated by the one-dot chain line in Fig. 13A) which emits light in the side direction and on the opposite side (light source side) from the light exiting side cannot be swept out to the outside, and becomes a loss of light. Further, among the light-emitting light emitted from the phosphor layer 7 in the JL plane direction, the fluorescent component C3 having a large angle with respect to the normal direction is also reflected by the interface between the working layer 7 having a different refractive index and the substrate 5 (Fig. nA) The middle-point key line is indicated, or is reflected by the interface between the substrate 5 and the outer layer (not shown by the broken line in FIG. nA). In this way, the fluorescent components cannot be swept out to the outside, and become a loss of light. When these losses are considered, the light that can actually be swept out to the light-emitting side is about 20% of the total light emission. On the other hand, as shown in the schematic diagram of another example of the display device of the prior art of FIG. 13B, when the side surface of the phosphor 7 is covered by the reflective layer 8 such as metal, the component which emits light in the side direction (solid line in FIG. 13B) One of the portions C1 is effectively guided out to the outside by being reflected by the reflective layer 8. However, the component C2 that emits light toward the opposite side (light source side) from the light exiting side cannot be swept out to the front direction. Further, similarly to the structure of FIG. 13A, among the fluorescent light emitted from the phosphor layer 7 in the front direction, the fluorescent component C3 having a large angle with respect to the normal direction is composed of the phosphor layer 7 and the substrate having different refractive indices. The interface reflection of 5 (indicated by a dotted line in Fig. 13A) or the interface reflection between the substrate 5 and the outer layer (indicated by a broken line in Fig. 13A) becomes a loss of light emission. Therefore, in the previous configuration shown in Figs. 13A and 13B, the light loss when the light from the phosphor layer 7 is swept out to the outside is large, and the light 161804.doc -37-201240183 is available. . Further, in the phosphor substrate 2 of the present embodiment, the phosphor layers 7R, 7G, and 7B are composed of a plurality of phosphor layers having different refractive indices divided by respective specific regions on the substrate 5, and each of the phosphor layers An intermediate layer 1 is preferably provided between the phosphor layers 7r, '7G, 7B and the substrate 5. Thereby, for each of the working layers 7R, 7G, and 7B having different refractive indices, a fluorescent component having a larger angle with respect to the normal direction of the light-emitting surfaces of the phosphor layers 7R, 7G, and 7B can be formed by the phosphor layer 7R. The loss of light generated by the total reflection of the interface between the 7G, 7B and the substrate 5 having a refractive index difference is minimized, thereby improving the light-pumping efficiency. Further, in the phosphor substrate 2 of the present embodiment, it is preferable that the intermediate portion (four) is formed of one or more minute structures, and that the cross-sectional area of the minute structure is smaller from the phosphor layer toward the substrate. The shape. By this, a gentle refractive index gradient can be provided between the working layers 7R, 7G, and 7B and the substrate 5. Therefore, the loss of light generated by the total reflection of the interface having the refractive index difference between the phosphor layers 7R, 7G, and 7b and the substrate 5 can be minimized, and the light pulsation efficiency can be remarkably improved. In the phosphor substrate 2 of the present embodiment, it is preferable that the microstructure is 81-cone shape and the apex portion of the conical shape is formed to have a vertex angle of 45 or less. Thereby, a gentle refractive index gradient can be provided between the light-receiving layer 7r, %, π and the substrate 5. (4) The loss of light generated by the total reflection of the interface between the phosphors 7R 7G and 7B and the substrate 5 with the refractive index difference can be minimized, and the light pick-up efficiency can be more significantly improved. 161804.doc

S-38-201240183 Further, the phosphor substrate 2 of the present embodiment is provided between the outer surface of the substrate 5 and the outer layer on the outer surface side between the substrate $ side and the outer layer side. A protective layer ii having a refractive index gradient. Thereby, a fluorescent component having a large angle with respect to the normal direction from the substrate 5 toward the outer layer side, that is, the fluorescent light emitted in the light emitting direction, and the refractive index difference between the substrate 5 and the outer layer can be formed. The loss of the & total reflection caused by the total reflection of the interface is minimized, so that the fluorescent light can be efficiently swept out to the outside. Further, in the case of the phosphor substrate 2 of the present embodiment, when the refractive index of the substrate 5 is n3 and the refractive index of the outer layer is n4, the refractive index of the protective layer 11 preferably has the self-substrate 5 The gradient toward the outer layer in the thickness direction orthogonal to the light-emitting surface is "gradually changed within a range from the substrate 5 to the outer layer side, that is, the light emitted in the light-emitting direction. With respect to the fluorescent component having a large angle in the normal direction, the loss of light generated by the total reflection of the interface having the refractive index difference between the substrate 5 and the external layer is minimized, so that the fluorescent light can be efficiently swept out. Further, in the phosphor substrate 2 of the present embodiment, it is preferable that the protective layer 11 is formed of one or more minute structures, and the cross-sectional area of the minute structure is small from the substrate 5 toward the outer layer. Therefore, a gentle refractive index gradient can be provided between the substrate $ and the outer layer. Therefore, the fluorescence from the substrate 5 toward the outer layer side and the light emitted in the light-emitting direction can be relatively opposite to the normal direction. Fluorescent component with a larger angle The loss of light generated by the total reflection of the interface having the difference in refractive index between the plate 5 and the outer layer is suppressed to a minimum', so that the fluorescent light can be efficiently swept out to the outside. Further, the phosphor substrate of the present embodiment 2, it is preferable that the small 161804.doc •39-201240183 structure is a +-cone shape, and the apex angle of the gj-cone shape is 45 or less. Thereby, the substrate 5 and the outer layer can be formed. A relatively low refractive index gradient is provided between the substrate 5 and the outer layer side, that is, the fluorescent component having a large angle with respect to the normal direction among the fluorescent light emitted from the light emitting direction, that is, the substrate 5 and the outer layer. The loss of light generated by the total reflection of the interface having the difference in refractive index is minimized, so that the fluorescent ray can be efficiently swept out to the outside. Further, with the phosphor substrate 2 of the present embodiment, Since the reflective layer 8 is provided on the side faces of the phosphor layers 7R, 7G, and 7B, the phosphors toward the side surface side among the phosphors that are isotropically emitted from the phosphor layers 7R, 7G, and 7B in all directions can be used. Effectively guided to the positive layer by the reflective layer 8. Direction. Therefore, it can improve the luminous efficiency (increasing the brightness of the front direction in the case of the luminous body such as the luminous body, the light that is swept out to the front direction is about 20% of the total, so the light that leaks to the side side is swept. When it is out to the front side, it is effective to increase the luminous efficiency of the south. In addition, the glory substrate 2 of the present embodiment is on the outer surface side of the incident surface on which the excitation light is incident on the working layers 7R, 7G, and 7B. The wavelength-selective transmission-reflecting layer 9 having a characteristic of transmitting at least the light of the peak wavelength of the excitation light and reflecting at least the light-emitting peak wavelength of the phosphor layers 7R, 7G, and 7B is provided. Thus, the self-phosphor layer 7R, The phosphors toward the back side (excitation light side) among the fluorescent light which is isotropically emitted in all directions in 7G and 7B are efficiently guided to the front direction by the wavelength selective transmission reflecting layer 9. Therefore, the luminous efficiency can be improved (increasing the brightness in the front direction). In the case of an illuminant layer such as a phosphor layer, the light that is swept out to the front direction is about 20% of the total of 161804.doc -40- § 201240183, so that the light that leaks toward the back side is swept out to the front side, which is effective. Improve luminous efficiency. [First Modification of First Embodiment] Hereinafter, a first modification of the above embodiment will be described with reference to Fig. 4 . The basic configuration of the display device of the present modification is the same as that of the first embodiment, and is different from the first embodiment in that an organic EL element substrate that emits blue light is used as a light source. Fig. 4 is a cross-sectional view showing the display device of the modification. In Fig. 4, the same components as those in Fig. 1A used in the first embodiment are denoted by the same reference numerals, and their description is omitted. As shown in Fig. 4, the display device 25 of the present modification is composed of a phosphor substrate 26 and an organic EL element substrate 27 (light source) bonded to the phosphor substrate 26 via the planarizing film 3. In the display device 25 of the present modification, blue light is emitted from the organic EL element substrate 27 as a light source. The main luminescence peak of blue light is preferably, for example, 410 nm to 470 nm. Further, in the phosphor substrate 26, a red phosphor layer 7r that emits red light using blue light as excitation light is provided on the red pixel PR, and blue light is emitted as excitation light on the green pixel PG. The green phosphor layer 7G. On the other hand, the blue pixel pB is provided with a light scattering layer 28 for scattering incident blue light and emitting it to the outside. The light-scattering layer 28 is configured such that, for example, a light-transmitting inorganic material or an organic material is dispersed with particles having a refractive index different from those of the materials, and the light incident on the light-scattering layer 28 is isotropically scattered in the layer. . In the same manner as in the first embodiment, the red pixel PR and the green pixel PG' are formed on the phosphor layer 7R and the side surface 161804.doc • 41 · 201240183, and the reflective layer 8 ′ is formed on the back surface (the surface facing the light source). There is a wavelength selective transmission through the reflective layer 9. Further, with respect to the blue pixel 叩, the reflection layer 8' is formed on the side surface thereof, and the wavelength selective transmission reflection layer 9 is formed on the back surface (the surface facing the light source). The other configuration of the display device 25 is the same as that of the i-th embodiment. In the display device 25 of the present modification, blue light from the organic element substrate 27 is incident on the phosphor substrate 26 as excitation light, and is red pixels. 11 Red fluorescence is generated by the red phosphor layer 7R, and green light is generated by the green working layer 7G in the green pixel pG. In the blue pixel pB, the incident blue light is scattered by the light scattering layer 28, and is directly emitted, and the full color display is performed by the respective color lights. As described above, the display principle of the blue pixel PB is different from that of the first embodiment. However, the present modification can improve the light-pumping efficiency and improve the conversion efficiency, and can achieve excellent viewing angle characteristics and excellent power consumption. The display device has the same effects as those of the first embodiment. [Second Modification of First Embodiment] Hereinafter, a second modification of the above embodiment will be described with reference to Figs. 5A and 5B. The basic configuration of the display device according to the present modification is the same as that of the first embodiment. The difference from the first embodiment is that an LED substrate is used as the light source. Fig. 5A is a cross-sectional view showing the overall configuration of a display device of the present modification. Fig. 5B is a cross-sectional view showing an LED substrate as a light source. 5A and 5B, the same components as those of Figs. 1A and 1B used in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. In the display device 51 of the present modification, the configuration of the phosphor substrate 2 is the same as that of the first embodiment, and the difference is in the configuration of the light source. As shown in Fig. 5B, the LED substrate 52 (light source) has an LED (Light Emitting Diode) 64. The LED 64 is formed by sequentially stacking one surface of the substrate 53 in order! Buffer layer 54, n-type contact layer 55, second n-type cladding layer 56, in-type cladding layer 57, activation layer 58, first p-type cladding layer 59, second p-type cladding layer 60' second buffer layer 61. A cathode 62 is formed on the n-type contact layer 55, and an anode 63 is formed on the second buffer layer 61. Further, as the LED, other well-known LEDs such as an ultraviolet ray-emitting inorganic LED or a blue luminescent inorganic LED may be used, but the specific configuration is not limited to the above. Hereinafter, each component of the LED substrate 52 will be described in detail. The active layer 58 used in the present modification is a layer which emits light by recombination of electrons and holes. As the material of the active layer, a well-known activation layer material for LED can be used. Examples of the material of the active layer include, for example, AlGaN, InAIN, InaAlbGa^bl^OSa, 〇$b, and a + 1) as the material of the blue activation layer, and may be exemplified as <z< However, the present embodiment is not limited to the above-described β, and a single quantum well structure or a multiple quantum well structure is used as the active layer 58. The activation layer of the quantum well structure may be either η-type or ρ-type, especially an undoped (no impurity-added) activation layer'. Since the half-value width of the emission wavelength is narrowed due to the narrowing of the inter-band luminescence, color purity can be obtained. Good luminescence is preferred. Further, at least one of the donor impurity and the acceptor impurity may be doped in the active layer 58. If the crystallinity of the active layer doped with impurities is the same as that of the undoped impurity phase, the inter-band luminescence intensity can be stronger than that of the undoped impurity by doping the host impurity. . When the acceptor impurity is doped, the peak wavelength can be shifted toward the low energy side by a difference of about 0.5 eV from the peak wavelength of the inter-band luminescence, and the half-value width becomes wider. If both the acceptor impurity and the host impurity are doped, the luminescence intensity can be further increased as compared with the luminescence intensity of the activation layer doped only with the acceptor impurity. In particular, in the case of forming an active layer doped with acceptor impurities, the conductive type of the active layer is preferably doped with a donor impurity such as si, and is set to n-type. The n-type package used in the present modification. As the cladding layers 56 and 57, a well-known n-type cladding layer material for LEDs can be used, and it can be composed of a single layer or a plurality of layers. When the n-type cladding layer 56, 57 is formed by an n-type semiconductor having a band gap energy larger than the active layer 58, a potential barrier for the hole between the n-type cladding layers 56, 57 and the active layer 58 may be The holes are enclosed within the active layer 58. For example, the n-type cladding layers 56 and 57 may be formed by n-type InxGai.xN (0$1), but the embodiment is not limited thereto. The p-type cladding layers 59 and 60 used in the present modification can be made of a known P-type cladding layer material for LEDs, and may be composed of a single layer or a plurality of layers. When the p-type cladding layers 59, 6〇 are formed by a p-type semiconductor having a band gap energy larger than the active layer 58, a potential barrier against electrons appears between the p-type cladding layers 59, 6〇 and the active layer 58. The electrons can be enclosed within the active layer 58. For example, the p-type cladding layers 59 and 6 can be formed by AlyGaNyN (〇SyS 1). However, the present embodiment is not limited to the above. The n-type contact layer 55 used in the present modification can be used for LEDs. The contact layer material is known. For example, an n-type contact layer 55 of n-type GaN can be formed as a layer forming an electrode by connecting 161804.doc 201240183 to the n-type cladding layers 56, 57. Further, as the layer in which the electrodes are formed by connecting the cladding layers 59 and 60, a (4) (10) type contact layer may be formed. When the second n-type cladding layer 56 and the second-type cladding layer 6 are formed of GaN, the contact layer does not need to be formed in particular, and the second cladding layer may be used as a contact layer. The above-described respective layers used in the present modification can be formed using a well-known film forming process for coffee makers, but the present embodiment is not particularly limited to these. For example, a gas phase insecticidal method such as MOWE (with a ruthenium metal gas phase 纟 day method), _ (molecular beam gas phase crystal method), HDVPE (hydride gas phase m), or the like can be used, for example, sapphire (for example) Contains C face, A face, ruler), Sic (also includes 6Hsic, 4η·SiC), spinel (MgAl2〇4, especially its (1)^ face), Ζη〇, &, GaAs, or other oxides It is formed on a substrate such as a single crystal substrate (NG〇 or the like). In the present modification, it is possible to obtain the same effect as that of the second embodiment, and it is possible to realize a display device which can improve the light-pumping efficiency, improve the conversion efficiency, and has excellent viewing angle characteristics and realize low power consumption. [Third Modification of First Embodiment] Hereinafter, a third modification of the above embodiment will be described with reference to Figs. 6A and 6B. The basic configuration of the display device according to the present modification is the same as that of the first embodiment, and is different from the first embodiment in that an inorganic eL substrate is used as a light source. Fig. 6A is a cross-sectional view showing the overall configuration of a display device of the present modification. Fig. 6 is a cross-sectional view showing an inorganic el substrate as a light source side substrate. In Figs. 6A and 6B, the same components as those in Figs. 1A and 1B used in the first embodiment are denoted by the same reference numerals, and their description will be omitted. 161804.doc • 45· 201240183 In the display device 67 of the present modification, as shown in FIG. 6B, the inorganic EL element substrate 68 (light source) includes the inorganic EL element 75. The inorganic EL element 75 is formed by sequentially laminating the first electrode 70, the first dielectric layer 71, the light-emitting layer 72, the second dielectric layer 73, and the second electrode 74 on one surface of the substrate 69. Further, as the inorganic EL element 75, a known inorganic EL, for example, an ultraviolet ray-emitting inorganic EL or a blue luminescent inorganic EL can be used. The specific configuration is not limited to the above. Hereinafter, each constituent element of the inorganic EL element substrate 68 will be described in detail. As the substrate 69, the same as the above-described organic sub-substrate 4 can be used. The first electrode 70 and the second electrode 74 used in the present modification include metals such as (A1), gold (Au), falling (Pt), and nickel (Ni), and indium (In) and tin (Sn). Oxide (ITO), tin (Sn) oxide (Sn02), and indium (In) and zinc (Zn) oxide (IZ0) are used as the transparent electrode material, but the present modification is not limited thereto. And other materials. However, it is preferable to use a 叮〇 4 transparent electrode for the electrode on the light-emitting side, and a reflective film of aluminum or the like is preferably used as the electrode on the opposite side to the light-emitting direction. The first electrode 70 and the second electrode 74 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion implantation method, or a resistance heating vapor deposition method, but the present modification is not limited to the formation. method. Alternatively, the formed electrode may be patterned by photolithography or laser lift-off, and the patterned electrode may be directly formed by combining with the mask. When the film thickness of the second electrode and the second electrode 74 is preferably 5 G nmm and the film thickness is less than 5 〇 (10), the wiring resistance may increase and the driving voltage may increase. The first used in this modification! As the dielectric layer 71 and the second dielectric body, a well-known dielectric material for inorganic EL can be used. As such a dielectric material, for example, 161804.doc 5 • 46 - 201240183, for example, tantalum pentoxide (Ta 2 〇 s), yttrium oxide (Si 〇 2 ), eucalyptus (Si 3 N 4 ), alumina (Al 2 〇 3) ), aluminum titanate (AlTi03), titanate lock (BaTi〇3), and barium titanate (SrTi〇3), etc., but the embodiment is not limited thereto. Further, the first dielectric layer 71 and the second dielectric layer 73 of the present embodiment may be composed of one selected from the above dielectric materials, or may be formed by laminating two or more kinds of materials. Further, each dielectric layer The film thickness of 71 and 73 is preferably about 200 nm to 500 nm. As the light-emitting layer 72 used in the present modification, a well-known light-emitting material for inorganic EL can be used. Examples of such a light-emitting material include ZnF2: Gd as an ultraviolet light-emitting material and BaAi2S4: Eu as a blue light-emitting material.

CaAl2S4 : Eu, ZnAl2S4 : Eu, Ba 2 SiS 4 : Ce, ZnS : Tm, SrS · Ce, SrS : Cu, CaS : Pb, (Ba, Mg) Al 2 S 4 : Eu, etc., but the embodiment is not limited thereto. Further, the film thickness of the light-emitting layer 72 is preferably about 300 nm to 1000 nm. In the present modification, it is possible to obtain the same effect as that of the first embodiment, and it is possible to realize a display device which can improve the conversion efficiency, improve the conversion efficiency, and has excellent viewing angle characteristics and can realize low power consumption. In the above-described embodiment, an organic EL element is exemplified as the configuration of the light source, and an LED is exemplified in the second modification, and an inorganic EL element is exemplified in the third modification. In these constitutional examples, a sealing film or a sealing substrate which seals a light-emitting element such as an organic EL element, an LED, or an inorganic EL element is preferably provided. Also, the sealing film and the sealing substrate can be formed by a known sealing material and sealing method. Specifically, it is also possible to form a film by applying a resin by spin coating, 〇DF, or lamination on the surface opposite to the substrate body constituting the light source, and 161804.doc •47·201240183. Alternatively, an inorganic film such as Si0, SiON, or SiN may be formed by a plasma CVD method, an ion implantation method, an ion beam method, a sputtering method, or the like, and then coated by a spin coating method, ODF, or a lamination method. The resin is bonded and used as a sealing film. By such a sealing film or a sealing substrate, it is possible to prevent the incorporation of oxygen or moisture from the outside into the light-emitting element, so that the life of the light source is improved. Further, when the light source is bonded to the phosphor substrate, it can be bonded by a general ultraviolet curable resin, a thermosetting resin or the like. Further, when a light source is directly formed on the phosphor substrate, a method of sealing an inert gas such as nitrogen or argon to a glass plate, a metal plate or the like can be mentioned. Furthermore, it is preferable to incorporate a moisture absorbent such as an oxidation pin into the inert gas to be enclosed, and it is possible to more effectively reduce the deterioration of the organic EL due to moisture. However, the present embodiment is not limited to these members and the formation method. Further, in order to sweep light from the opposite side of the substrate, it is necessary to use a light-transmitting material for both the sealing film and the sealing substrate. Further, in the first embodiment and its modifications, the light emitted from the phosphor layers 7R, 7G, and 7B is directly emitted to the substrate 5, but may be, for example, in the middle of the phosphor layers 7R, 7G, and 7B. Between the layers 1 and 遽, the color 遽 ' ' 提 提 提 提 提 提 提 提 提 提Specifically, a red color filter is disposed on the red pixel PR. A green color light-passing sheet is disposed on the green pixel PG, and a blue color filter is disposed on the blue pixel PB. As a color filter, a conventional color filter can be used. When a color filter is disposed between the phosphor layers 7R, 7G, and 7B and the intermediate layer 10, the refractive index of the red color light-emitting sheet is preferably substantially the same as the refractive index of the red phosphor layer 7R. The refractive index of the green color filter is preferably substantially the same as the refractive index of the green phosphor layer 7G -48-161804.doc 5 201240183. The refractive index of the blue color filter is preferably substantially the same as the refractive index of the blue phosphor layer 7B. Further, a color filter may be disposed between the intermediate layer 10 and the substrate 5. When a color filter is disposed between the intermediate layer 10 and the substrate 5, the refractive indices of the red color light-emitting sheet, the green color filter, and the blue color filter are preferably approximately the same as the refractive index of the substrate 5. the same. By providing the color filter in correspondence with each pixel in this manner, the color purity of each of the red pixel PR, the green pixel PG, and the blue pixel PB can be improved, and the color reproduction range of the display device can be expanded. Further, a red color filter formed under the red phosphor layer 7R, a green color filter formed under the green phosphor layer, and a blue color filter formed under the blue phosphor layer 7B are externally absorbed. The excitation light component contained in the light. Therefore, the emission of the phosphor layers 7R, 7G, 7B by external light can be reduced or prevented, so that the decrease in contrast can be reduced or prevented. Further, by the red color, the light-receiving sheet, the green color light-emitting sheet, and the blue color light-emitting sheet, it is possible to prevent the excitation light that is not absorbed by the phosphor layers 7R, 7G, and 7B from leaking to the outside, thereby preventing the light from being emitted to the outside. The color purity of the display is lowered due to the color mixture caused by the luminescence of the phosphor layers 7R, 7G, and 7B and the excitation light. [Second Embodiment] Hereinafter, a second embodiment of the present invention will be described with reference to Figs. 7 and 8 . The display device of the present embodiment is an example of a configuration in which an active matrix drive type organic EL element substrate is used as a light source. Fig. 7 is a cross-sectional view showing the display device of the embodiment. Fig. 8 is a plan view showing the display device of the embodiment. In Fig. 7, the same components as those in Fig. 1A used in the first embodiment of the present invention are incorporated with reference numerals, and the description thereof will be omitted. As shown in Fig. 7, the display device 82 of the present embodiment is composed of a phosphor substrate 2 and an organic EL element substrate 83 (light source) bonded to the phosphor substrate 2. In the organic EL element substrate 83 of the present embodiment, an active matrix driving method using TFTs is used as a means for switching whether or not to illuminate each of the red pixel PR, the green pixel PG, and the blue pixel 。. The other configuration of the phosphor substrate 2 is the same as that of the first embodiment. In the case where the organic EL element substrate 83 of the present embodiment emits ultraviolet light, the blue pixel PB includes a blue phosphor layer that emits blue light by using ultraviolet light as excitation light. Alternatively, when the organic EL element substrate 83 of the present embodiment emits blue light, the blue pixel PB includes a light scattering layer that scatters blue light. (Active Matrix Driven Organic EL Device Substrate) Hereinafter, the organic EL device substrate 83 of the present embodiment of the active matrix drive type will be described in detail. As shown in FIG. 7, the organic EL element substrate 83 of the present embodiment has a TFT 85 formed on one surface of the main body 84, that is, a gate electrode 86 and a gate line 87' are formed to cover the gate electrodes 86 and the gates. A gate insulating film 88 is formed on the substrate 84 in the manner of the electrode line 87. An active layer (not shown) is formed on the gate insulating film 88, and a source electrode 89, a drain electrode 90, and a data line 91 are formed on the active layer to cover the source electrode 89 and the electrodeless electrode. A flattening film 92 is formed in a manner of 9 turns and a data line 91. Further, the planarizing film 92 may not be a single layer structure, or may be formed by combining another interlayer insulating film and a planarizing film. Also, there is a through-ground θ 161804.doc

S 50. 201240183 The film or the interlayer insulating film reaches the contact hole 93 of the drain electrode 90, and the organic EL element 12 electrically connected to the electrode electrode 90 via the contact hole 93 is formed on the planarizing film 92. The configuration of the anode 13 »organic EL element 12 itself is the same as that of the first embodiment.

The substrate 84 used as an active matrix drive type is preferably used for 5 turns. 〇 The following substrates are not melted and do not cause distortion. Moreover, a general metal substrate differs from the thermal expansion coefficient of glass in that it is difficult to form a TFT on a metal substrate in a prior production apparatus, but by using an iron-nickel alloy having a linear expansion coefficient of 1×10 5 /° C. or less. The metal substrate 'adapts the linear expansion coefficient to the glass, and the TFT can be inexpensively formed on the metal substrate using the prior production apparatus. Further, in the case of a plastic substrate, since the heat-resistant temperature is low, the TFT is transferred to the plastic substrate after the TFT is formed on the glass substrate, whereby the TFT can be transferred onto the plastic substrate. Since the light emitted from the organic EL layer is emitted from the side opposite to the substrate, the substrate can be either transparent or opaque. The TFT 85 is formed on the substrate 84 before forming the organic EL element 12, and functions as a pixel switching element and an organic EL element driving element. The TFT 85 used in the present embodiment is a well-known TFT, and can be formed by using a known material, structure, and formation method. Further, in the present embodiment, a metal-insulator-metal (MIM) diode may be used instead of the TFT 85 as a material of the active layer of the TFT 85, and examples thereof include amorphous silicon and polycrystalline germanium (p〇ly_silic〇n). ), inorganic semiconductor materials such as microcrystalline germanium, tin selenide, oxide semiconductor materials such as zinc oxide, indium oxide, gallium oxide, or zinc oxide, or polythiophene derivatives, thiophene polymer, poly 161804.doc 51 201240183 γ pair An organic semiconductor material such as a phenylacetylene derivative, a thick tetraphenyl or a pentacene. Further, examples of the structure of the TFT 85 include a staggered type, an inverted staggered type, a top gate type, and a coplanar type. Examples of the method for forming the active layer constituting the TFT 85 include: (1) a method of doping impurity ions into amorphous film formed by a plasma-excited chemical vapor phase growth (pECVD) method; (7) by using money. Qing 4) Gas reduction, chemical vapor phase growth (LPCVD) method, non-, ################################################################################ (3) An amorphous germanium is formed by using Lpcvi^ of Si2H6 gas or a PECVD method using a gas, and annealing is performed by a laser such as an excimer laser to crystallize the amorphous germanium to obtain a polycrystalline germanium, and then an ion is obtained. Doping method (low temperature process); (4) forming a polysilicon layer by LPCVD method or pECVD method, forming a gate insulating film by 丨 (heat oxidation above HKTC), forming n+ on the gate insulating film a gate electrode of polycrystalline germanium, followed by a method of ion doping (high temperature process); (5) a method of forming an organic semiconductor material by an inkjet method or the like; (6) a method of obtaining a single crystal film of an organic semiconductor material Etc. The gate of TFT85 used in this embodiment is absolutely The film 88 can be formed using a known material, and examples thereof include Si〇2 obtained by thermally oxidizing Si〇2 or a polycrystalline germanium film formed by a pECVD method, an LpcvD method, etc. Further, information of the TFT 85 used in the present embodiment. The line 91, the gate line 87, the source electrode 89, and the drain electrode 90 can be formed using a well-known conductive material, and examples thereof include tantalum (Ta), aluminum (A1), copper (Cu), etc. The TFT 85 of the present embodiment can be used. The configuration is as described above, but is not limited to the materials, structures, and formations 161804.doc

S • 52· 201240183 Act. A well-known material can be used for the interlayer insulating film 92 used in this embodiment. The formation may, for example, be an inorganic material such as yttrium oxide (Si〇2), tantalum nitride (SiN or Si3N4), a oxidized button (TaO or Ta2〇5), or an organic material such as an acrylic resin or a resist material. Further, examples of the method for forming the same include a wet process such as a chemical vapor phase growth (CVD) method or a vacuum vapor deposition method, and a wet process such as a spin coating method. Further, it may be patterned by photolithography or the like as needed. Further, 'the light from the organic EL element 12 is swept out from the opposite side of the substrate 84', so that the external light is prevented from entering the lamp formed on the substrate body 84 to cause a change in the electrical characteristics of the TFT 85. Slightly insulating film. Further, the interlayer insulating film 92 may be used in combination with a light-shielding insulating film. Examples of the light-shielding interlayer insulating film include a pigment or a dye such as phthalocyanine or quinacridone dispersed in a polymer resin such as polyimine, a color resist, a black matrix material, and an inorganic material such as NixZnyFe2〇4. Insulation materials, etc. However, the present embodiment is not limited to these materials and forming methods. In the present embodiment, irregularities are formed on the surface of the substrate 84 by the TFTs 85 and various wirings and electrodes formed on the substrate 84. By the unevenness, for example, the anode 13 or the cathode 2 may be generated in the organic EL element 12. The lack or disconnection 'the lack of the organic EL layer, the short circuit between the anode 13 and the cathode 2, and the drop in withstand voltage. Therefore, in order to prevent such a phenomenon, it is preferable to provide the planarizing film 92 on the interlayer insulating film. The planarizing film 92 used in the present embodiment can be formed using a known material, and examples thereof include inorganic materials such as cerium oxide, cerium nitride, and cerium oxide, and polyimine, acrylic resin, and resist materials. -53- 201240183 Machine materials, etc. The method for forming the planarizing film 92 may be a wet process such as a dry process such as a CVD method or a vacuum vapor deposition method, or a spin coating method. However, the present embodiment is not limited to these materials and a forming method. Further, the planarizing film 92 may have a single layer structure or a multilayer structure. As shown in FIG. 8, the display device 82 of the present embodiment includes a pixel portion 94 formed on the organic EL element substrate 83, a gate signal driving circuit 95, a data k-number driving circuit 96, a signal wiring 97, and a current supply line 98. And a flexible printed circuit board 99 (FPC) and an external drive circuit 111 connected to the organic EL element substrate 83. The organic EL element substrate 83 of the present embodiment drives the organic EL element 12 to electrically connect the organic EL element 12 to an external driving circuit 111 including a scanning line electrode circuit, a data signal electrode circuit, a power supply circuit, and the like via the FPC 99. In the case of the present embodiment, the switching circuit such as the TFT 85 is disposed in the pixel portion 94. The TFT 85 or the like is connected to the wiring such as the data line 91 and the gate line 87. A data signal driving circuit 96 and a gate signal driving circuit 95 for driving the organic EL element 12 are connected to the data line 91 and the gate line 87, respectively. The data drive circuit 96 and the gate signal drive circuit 95 are connected to the external drive circuit 经由u via the signal wiring 97. A plurality of gate lines 87 and a plurality of data lines 91' are disposed in the pixel portion 94, and TFTs 85 are disposed in the vicinity of the intersection of the gate lines 87 and the data lines 91. The organic EL element 12 of the present embodiment is driven by a voltage-driven digital gray scale method. Two TFTs for the switching TFT and the driving TFT are disposed for each pixel (each organic EL element 12). The driving TFT and the anode 13 of the organic EL element 12 are electrically connected to each other via a contact hole 93 formed in the planarizing film 92, and electrically connected to the antenna 161804.doc • 54· 3 •-α· 201240183. In the other pixel, a gate electrode (not shown) for setting the gate potential of the driving TFT to a constant potential is disposed so as to be connected to the gate electrode of the driving TFT. However, the present embodiment is not particularly limited to the above-described 'drive mode', which may be the voltage-driven digital gray scale method or the current drive analog gray scale method. Further, the number of TFTs is not particularly limited, and the organic EL element 9 can be driven by the two TFTs described above, and the characteristics (movability, threshold voltage) of the TFT 85 are prevented from being used for the purpose, and the pixel may be built in. In the present embodiment, it is possible to obtain the same effect as that of the first embodiment, and it is possible to improve the conversion efficiency and the viewing angle characteristics. A display device capable of achieving low power consumption. Further, in particular, in the present embodiment, the active matrix drive type light source substrate 83 is used, so that a display device having excellent display quality can be realized. Further, compared with the passive driving, the light-emitting time of the organic EL element 12 can be lengthened, so that the driving current for obtaining the desired luminance can be reduced, so that the power consumption can be reduced. Further, since the light is swept away from the opposite side (the phosphor substrate side) of the light source substrate 83, the light-emitting region can be enlarged without forming regions of the TFT and various wirings, and the aperture ratio of the pixel can be improved. [Third embodiment] Hereinafter, a third embodiment of the present invention will be described with reference to Fig. 9 . The display device of the present embodiment is a configuration example in which a liquid crystal element is incorporated between a phosphor substrate and a light source. Fig. 9 is a cross-sectional view showing the display device of the embodiment. In Fig. 9, 16I 804.doc - 55 - 201240183 and the components of Fig. 1 which are used in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. As shown in Fig. 9, the display device 113 of the present embodiment includes a phosphor substrate 2, an organic EL element substrate 11 (light source), and a liquid crystal element 11 5 . The configuration of the phosphor substrate 2 is the same as that of the first embodiment, and the description thereof is omitted. Further, the laminated structure of the organic EL element substrate 114 is the same as that shown in the drawing b of the first embodiment. However, in the first embodiment, the organic EL elements corresponding to the respective pixels are individually supplied with drive signals, and the respective organic EL elements are controlled to emit light independently without emitting light. In the present embodiment, the organic EL elements 11 are controlled. 6 does not divide for each pixel, but functions as a common planar light source for all pixels. Further, the liquid crystal element 115 is configured to control the voltage applied to the liquid crystal layer by using a pair of electrodes for each pixel, and control the transmittance of light emitted from all the surfaces of the organic EL element 116 for each pixel. In other words, the liquid crystal element 115 has a function as a shutter that selectively transmits light from the organic EL element substrate 114 for each pixel. The liquid crystal element 11 5 of the present embodiment can use a well-known liquid crystal element including, for example, a pair of polarizing plates 117 and 118, electrodes 119 and 120, alignment films 121 and 122, and a substrate 123, and sandwich between the alignment films 121 and 122. Holds liquid crystal 124. Further, a layer of optical anisotropic layer may be disposed between the liquid crystal cell and one of the polarizing plates 117 and 117, or two layers of optical anisotropy may be disposed between the liquid crystal cell and the polarizing plates 117 and 118. Floor. The type of the liquid crystal cell is not particularly limited 'may be appropriately selected according to the purpose, and examples thereof include TN mode, VA mode, OCB mode, IPS mode, and ECB mode 161804.doc -56-201240183: On: Yuan == is a passive drive' In the present embodiment, it is possible to obtain the same effect as that of the first embodiment, and it is possible to realize a display device which can improve the light-pumping efficiency, improve the conversion efficiency, and has excellent viewing angle characteristics and can realize low power consumption. When the organic EL element substrate 114 having the image of the liquid crystal element 115 is in the form of the present embodiment, the switching of the element and the function as a planar light source can further reduce power consumption. [Fourth embodiment] Hereinafter, a fourth embodiment of the present invention will be described using Fig. 12 . In the phosphor substrate 151 of the present embodiment, the divided phosphor layers 15 5R, 15 5G, and 15 5B have different refractive indices. Intermediate layers 153R, 153G, and 153B having different refractive index gradients are provided between the respective phosphor layers 155R, 155G, and 155B and the substrate 151, respectively. As shown in Fig. 12, the phosphor substrate ι51 of the present embodiment has intermediate layers 153r, 153G, and 153B having different refractive index gradients on the inner surface side (first surface) of the substrate 152. A light absorbing layer 154 is formed between each of the intermediate layers 153R, 153G, and 153B. Phosphor layers 155R, 155G, and 15B are formed on the intermediate layers 153R, 153G, and 153B, respectively. On the outer surface side (second surface) of the substrate 152, a protective layer 156 is formed between the substrate 152 and the outer air side as the outer layer of the substrate 152. That is, a protective layer 156 is formed on the second surface of the substrate 152. The phosphor layers 155R, 155G, and 155B are provided in plural for each pixel. The complex phosphor layers 155R, 155G, and 155B are based on pixels. • 57· 161804.doc

S 201240183 emits different colors of light' and is composed of different phosphor materials and refractive indices. The light absorbing layer 154 is made of a material having light absorbing properties and is formed corresponding to a region between adjacent pixels. With the light absorbing layer 154, the contrast of the display can be improved. The phosphor layers 155R, 155G, and 155B include, for example, a film having a rectangular shape in plan view. A reflective layer 157 is formed on all sides of the phosphor layers 155R, 155G, and 155B. Furthermore, the reflective layer 157 may not be formed on all sides of the phosphor layers 155R, 155G, 155B. The reflective layer 157 may also be formed on at least one side of the phosphor layers 15 5R, 155G, 155B. Further, a wavelength selective transmission reflection film i 58 is formed on the phosphor layers 155R, 155G, and 155B, that is, on the incident surface (outer surface side) where the excitation light is incident. The basic constituent members of the phosphor substrate 15 1 of the present embodiment are the same as those of the phosphor substrate of the first embodiment, but differ from the second embodiment in that each of the phosphor layers 155R and 155G having different refractive indices Intermediate layers 155R, 155G, and 155B having different refractive index gradients are formed on 155B, respectively. The intermediate layers 153R, 153G, and 153B of the present embodiment are disposed between the phosphor layers 155R, 155G, and 155B and the substrate 152 as described above. The layers from the phosphor layers 155R, 155G' 155B throughout the substrate 152, the intermediate layers 153R, 153G, 153B have different refractive index gradients. The refractive index gradient preferably has a gradient from the phosphor layer 155R toward the substrate 152 when the refractive index of the phosphor layer 155R is η 1 (R) and the refractive index of the substrate 152 is n2. The light-emitting surface (surface on the substrate 152 side) of the above-mentioned working layer 15511 is gradually changed in the thickness direction from 111 (foot) to 112 in the thickness direction. Specifically, it is preferable that the step 161804.doc 58·201240183 degrees with a stepwise or continuous change preferably has a gradient of setting the refractive index of the phosphor layer 550 to n1 (G), and the substrate 152 When the refractive index is set to the center of the core, the phosphor layer 155G faces the substrate 152 in the thickness direction orthogonal to the light-emitting surface (surface on the substrate 152 side) of the glory layer 15, and is in the range of ni(R) to n2. Slowly edged within the range. Specifically, it is preferred to have a gradient of a stepwise or continuous change. Further, it is preferable to have a gradient in which the refractive index of the phosphor layer 155B is n1 (B) and the refractive index of the substrate 152 is set to the center, and the phosphor layer 155B faces the substrate 152. The light-emitting surface of the light-emitting layer 155B (the surface on the substrate 152 side) is gradually changed in the thickness direction from nl (R) to the center of the core. Specifically, it is preferred to have a gradient of a stepwise or continuous change. Here, the refractive indices of the phosphor layers 155R, 155G, and 155B! ^ is for example 2.0~2.3 or so. The refractive index n2 of the substrate 152 is about 1.5 in the case of, for example, a glass substrate. Therefore, for example, when the refractive index of the phosphor layer 15511 is 2.1, the refractive index gradient of the intermediate layer 153R is preferably from the phosphor layer 155R toward the substrate 152, and is about 13 to 1.5 or about 1.5 or Continuously smaller. Further, for example, when the refractive index nl(R) of the camping layer 15 g is 2.2, the refractive index gradient as the intermediate layer i53g is preferably from the phosphor layer 155G toward the substrate 152, to 2 2 From left to right and around 1.5, it is gradually or continuously smaller. Further, for example, when the refractive index ni(R) of the camping body layer 155B is 2.3, the refractive index gradient of the intermediate layer 153B is preferably from about 2.3 to 1.5 in the direction from the phosphor layer 155B toward the substrate 152. The left and right are gradually reduced in stages or continuously. With such a configuration, the intermediate layers 153R, 153G, and 153B can have the fluorescent component having a larger angle in the normal direction of the light-emitting surface of the phosphor layers 155]1, 155G, and 155B than the phosphor layers 155, doc - 59, and 201240183. The loss of light generated by the total reflection of the interface between the phosphor layers 155R, 155G, and 155B and the substrate 152 having a refractive index difference is suppressed to a minimum. As the intermediate layers 153R, 153G, and 153B having such a refractive index gradient, for example, (1) can be formed by laminating a plurality of layers (materials) having different refractive indices or continuously laminating them. Further, (2) one or more minute structures having a slight j-direction in the thickness direction are formed, and the ratio of the minute structures is continuously changed in the thickness direction, whereby an intermediate layer having a refractive index gradient can be formed. Further, in (1), the refractive index of the material to be laminated is changed, and in (2), the refractive index and the gradient of the material of the microstructure are changed, whereby the refractive index gradient suitable for each layer of the intermediate layer, 153G, and 153b can be selected. The layers 153R and 153G of the manufacturing method of 151, and an example of the phosphor substrate of the present embodiment will be described. Further, the example described here is a method in which the intermediate portion 153B and the protective layer 156 are formed as a structure in which the horses and the horses each include a conical micro structure. In the case of the work substrate 151, the uv effect resin is first mixed with the intermediate layer forming material as the intermediate layer to form a film. The second use of a micro-structure having a conical shape (for example, an aluminum mold having a concave shape with a apex angle of 3), an injection molding machine having a chopstick shape, forming a plurality of minute circular shapes and having a refractive index gradient 152. - The intermediate layer is transferred to the base; secondly, on the intermediate layer 153R formed on one surface of the substrate, the 161804.doc • 60 · 3 201240183 optical mask is released for UV exposure and Development is performed to form an intermediate layer 153R on the substrate 152. Then, the intermediate layers 153G and 153B are patterned in the same manner as above. Next, the spacers are sequentially formed on the intermediate layers 153R, 153G, and 153B using a dispenser. After the light-emitting layers 155R, 155G, and 155B are formed, the reflective layer 157, the wavelength selective transmission and reflection layer 158, and the protective layer 156 are sequentially formed in the same manner as the phosphor substrate of the first embodiment, thereby obtaining the glotex substrate 151. Example of the machine As an example of the electronic device including the display device of the above-described embodiment, a mobile phone shown in Fig. 10A and a television receiver shown in Fig. B can be cited. The telephone 127 includes a main body 128, a display unit 129, an audio input unit 130, an audio output unit 13 1 , an antenna 132, an operation switch 133, etc., and the display unit 129 uses the display device of the above-described embodiment. The receiving device 135 includes a main body cabinet 136, a display unit 137 'speaker 138, a bracket 139, and the like, and the display unit 137 uses the display device of the above-described embodiment. The display device of the above embodiment is used in such an electronic device. An electronic device having a low-power consumption with excellent quality is now displayed. [Illumination device] Hereinafter, an illumination device including a phosphor substrate of the embodiment of the present invention will be described with reference to Fig. 11. As shown in Fig. 11, the illumination device 141 of the present embodiment includes Optical film 161804.doc -61 - 201240183 142, phosphor substrate 143, organic EL element 147 including anode 144, organic EL layer 145 and cathode 146, heat diffusion plate 148, sealing substrate 149, sealing resin 150, heat dissipation material 151 The driving circuit 152, the wiring 153, and the suspension ceiling 154. In the illuminating device, the phosphor substrate 143 is the phosphor substrate of the above embodiment. Therefore, it is possible to realize a bright and low-power illuminating device. Further, the technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. In the display device described in the above embodiment, it is preferable to provide a polarizing plate on the light-emitting side. As the polarizing plate, a combination of the previous linear polarizing plate and the λ/4 plate can be used. By providing such a polarizing plate, It is possible to prevent external light reflection from the display-exposed electrode or external light reflection on the surface of the substrate or the sealing substrate, thereby improving the contrast of the display device. In addition, the specific description of the shape, the number, the arrangement, the material, the formation method, and the like of each component of the phosphor substrate and the display device is not limited to the above embodiment, and can be appropriately changed. [Examples] Hereinafter, the form of the present invention will be described in more detail by way of examples and comparative examples, but the form of the invention is not limited to the examples. (Comparative Example) A glass of 0.7 mm was used as the substrate. After the substrate was washed with water, ultraponic cleaning with pure water for 1 minute, acetone ultrasonic cleaning for 1 minute, and isopropanol vapor cleaning for 5 minutes, and 100. (: Dry for 1 hour. 16l804.doc

S -62 - 201240183 Next, a green phosphor layer having a thickness of 1 μm was formed on the substrate. Here, the green phosphor layer was formed as follows. First, 15 g of ethanol and 22 g of glycidoxypropyldiethoxydecane oxime were added to 16 g of the vapor phase cerium oxide having an average particle diameter of 5 nm, and the mixture was stirred at room temperature for 1 hour at room temperature. The mixture was transferred to a mortar with green phosphor CaQ 97MgG G3: Zr〇3: Ho at 20 g, thoroughly ground and mixed, and then heated in an oven (for 2 hours, and further at 12 Torr.) The surface was modified by Ba2Si04: Eu2+ in an oven for 2 hours. Next, a mixture of water/dimercaptosulfoxide = 1/1 was added to the 〇giCaowMgow: Zr〇3: Ho which was subjected to surface modification. The solution (30 g of polystyrene alcohol dissolved in 3 Å was stirred by a disperser to prepare a coating liquid for forming a green phosphor. The coating liquid for green phosphor formation prepared above was subjected to screen printing method. It was applied to the desired position on the above glass at a width of 3 mm, and then dried by heating in a vacuum oven (200 C, 10 mmHg for 4 hours to form a green phosphor layer) to complete the phosphor substrate. In the case of a light-emitting substrate, a commercially available luminance meter (bm_7: manufactured by TOPCON TECHNOHOUSE Co., Ltd.) was used, and when a blue LED was used as excitation light and light of 450 ηπι was incident from the back surface of the phosphor substrate, it was measured from the front side. Luminance conversion efficiency of 25 ° C of fluorescent light The luminance of the blue LED of the excitation light is 1000 cd/m2, whereas the luminance of the green light having the luminescence peak at 547 nm after the phosphor is 1023 cd/m2 and the luminance conversion efficiency is 100%. Example 1) On the same glass substrate as the comparative example, as shown in FIGS. 3A and 3B, an intermediate layer 1 构成 composed of a plurality of minute conical shapes having a refractive index gradient was formed as shown in FIGS. 3A and 3B. The intermediate layer was formed. The material 31 is used for adding a metal compound (Ti〇2) to a transparent resin (polyethylene), and as shown in Fig. 3A, an injection molding machine having a mold 30 is used, and the material is included. The intermediate layer forming material 31 of the mixed material is shaped to form an intermediate layer 10 having a plurality of minute conical shapes (apex angle: 30) and having a refractive index gradient as shown in Fig. 3B. Next, 'the refractive index with the above glass substrate is used. A commercially available colorless transparent optically bonded polyoxyxene oil mixture having substantially the same refractive index, as shown in Fig. 3B, was bonded to the glass substrate 5 with the intermediate layer 1 〇. Then, by the same method as the comparative example In the middle layer 10 The green phosphor layer was formed. Then, in the same manner as in the comparative example, when the blue LED was used as the excitation light and the light of 45 0 nm was incident from the back surface of the phosphor substrate, the fluorescence of the light emitted from the front side was measured at 25 ° C. Luminance conversion efficiency: The luminance of the blue LED as the excitation light is 1000 cd/m2 'relative to the brightness of the green luminescence having a luminescence peak at 547 nm after passing through the phosphor is 1105 cd/m2 and the luminance conversion The efficiency was 110%, and a brightness increase of 1.1 times was observed with respect to the comparative example. (Example 2) On the side surface on the phosphor layer of the phosphor substrate produced in Example 1, a total reflection film of the name was uniformly formed by a film thickness of 5 0 τ rn. Then, in the same manner as in the comparative example, when the blue LED was used as the excitation light and the light of 45 nm was incident from the back surface of the phosphor substrate, the luminance conversion efficiency at 25 °C of the fluorescence emitted from the front surface was measured. The brightness of the blue LED as the excitation light is 161804.doc -64- § 201240183 degrees is 1000 cd/m. In contrast, the luminance of the green luminescence with the luminescence peak at 547 nm after the phosphor is 2721 cd/ The brightness conversion efficiency was 270%, and a brightness improvement of 2.7 times was observed with respect to the comparative example. (Example 3) The surface on the phosphor layer of the phosphor substrate produced in Example 2 on the side on which the excitation light was incident was selected as a wavelength selective transmission reflection film to cause titanium oxide (1'1〇2). : refractive index = 2.30) and yttrium oxide (81 〇 2: refractive index = 147), a dielectric multilayer film produced by alternately forming a film of 6 layers by a vapor deposition method, and a film thickness of 100 nm by sputtering form. Then, in the same manner as in the comparative example, when the blue LED was used as the excitation light and the light of 450 nm was incident from the back surface of the phosphor substrate, the luminance conversion efficiency of 25 C of the fluorescence emitted from the front surface was measured. The luminance of the blue LED as the excitation light is 1000 cd/m 2 , whereas the luminance of the green light by the luminescence peak at the nm after the phosphor is 3512 cd/m 2 and the luminance conversion efficiency is 350%. A luminance of 35 times was observed relative to the comparative example. (Example 4) On the glass substrate of the phosphor substrate produced in Example 3, as shown in Fig. 31, a protective layer 11 having a refractive index gradient and composed of a plurality of minute conical shapes was formed. The protective layer forming material is a transparent resin (polyethylene). The material is formed by using an injection molding machine including a micro-conical shape having a concave shape as shown in FIG. 3A, and has a plurality of minute conical shapes (apex angle: 30) as shown in FIG. Protection with refractive index gradient 161804.doc .65- 201240183 Layer 11. Next, a commercially available colorless transparent optical bonding polyoxyxene oil mixture having a refractive index substantially equal to the refractive index of the glass substrate was used, and a protective layer 11 was attached to the glass substrate. Then, in the same manner as in the comparative example, when the blue LED was used as the excitation light and the light of 45 〇 nm was incident from the back surface of the phosphor substrate, the luminance conversion efficiency at 25 ° C of the fluorescence emitted from the front surface was measured. The luminance of the blue LED as the excitation light is 1000 cd/m 2 'In contrast, the luminance of the green light having the luminescence peak at 547 nm after the phosphor is 3832 Cd/m 2 , and the luminance conversion efficiency is 380%. 'Eight to 8 times the brightness was observed with respect to the comparative example. (Example 5) On the same glass substrate as the comparative example, magnesium fluoride (refractive index: 1.38) was subjected to electron beam evaporation. Oxidation (refractive index: 2.30) - the surface slightly changes the steam speed while simultaneously 2 〇〇. (: vapor deposition is carried out. The vapor deposition rate is such that the vapor deposition rate of the fluorinated lock and the titanium oxide is higher than that of the titanium oxide: the film is formed at a time interval of 1 minute to 〇: 1 〇. The film is formed on the glass substrate by this method. On the side, an intermediate layer having a higher concentration of magnesium fluoride and having a higher concentration of titanium oxide in the thickness direction as the distance from the glass substrate is gradually increased, and a gradient of a refractive index is gradually formed. Next, 'by the same method as the comparative example Forming green on the middle layer

The technical SA SL goods have no flaws. Next, by the same method as in Example 2, the in-situ total reflection film was uniformly formed by sputtering on the side surface on the phosphor layer of the phosphor substrate by sputtering. 161804.doc

S: 66 · 201240183 Next, in the same manner as in the third embodiment, the surface on the side of the phosphor layer of the phosphor substrate on which the excitation light is incident is selected as a wavelength selective transmission reflection film to cause titanium oxide. (Ti〇2: refractive index = 2.3 〇) and yttrium oxide (SiCh. refractive index = 147) were formed by alternately forming a film of 6 layers by EB vapor deposition. It is formed with a film thickness of 100 nm. Then, in the same manner as in the comparative example, when the blue LED was used as the excitation light and the light of 450 nm was incident from the back surface of the phosphor substrate, the luminance conversion efficiency at 25 ° C of the fluorescence emitted from the front surface was measured. The luminance of the blue LED as the excitation light is 1000 cd/m2. On the other hand, the luminance of the green light having the luminescence peak at 547^11 after the phosphor is 3443 cd/m2, and the luminance conversion efficiency is 340. %, a brightness improvement of 34 times was observed with respect to the comparative example. The above results are summarized in the following [Table]. [Table 1] Brightness (cd/m2) Brightness conversion efficiency (%) Light comparison with Comparative Example Example 1023 100 Example 1 1105 110 1.1 times Example 2 2721 270 2.7 times Example 3 3512 350 3.5 times Example 4 Γ 3832 3443 _380_ 340 __3.8 times 3.4 times Example 5 (Example 6) [Blue organic EL + phosphor mode] On a 0.7 mm glass substrate, a micro-cone having a refractive index gradient and consisting of plural The middle layer of the shape. The interlayer forming material is used for adding a metal compound (Ti〇2) to a transparent resin (polyethylene). The mixed material is formed by using an injection molding machine including an aluminum 161804.doc .67·201240183 mold having a micro-conical shape having a concave shape as shown in FIG. 3A to form a plurality of micro-J conical shapes (apex angle: 3) and have an intermediate layer of refractive index gradient. Further, a commercially available colorless transparent optical bonding polyoxyxene oil mixture having a refractive index substantially equal to the refractive index of the glass substrate is used to bond the glass substrate to the intermediate layer. Then, a red phosphor layer and a green phosphor layer 'blue scatterer layer are formed on the intermediate layer, and the phosphor substrate is used. A low-reflection layer (light absorbing layer) on a trapezoidal layer containing chromium was formed on the substrate at a width of 20 μm, a film thickness of 500 nm, and a pitch of 200 μm. The formation of the red phosphor layer is firstly added to the gas phase method of ruthenium dioxide 0.16g with an average particle diameter of 5 nm, 15 g of ethanol and γ-glycidoxypropyl triethoxy decane 0·22 g in the open system. Stir at room temperature for 丨 hours. The mixture was transferred to a mortar with 20 g of red phosphor K5Eu 2.5 (W 4 ), and was thoroughly ground and mixed at 70. (: Heat in an oven for 2 hours, and then heat in an oven for 2 hours to obtain k5Eu2 5(w〇4) 6 25 which has been surface-modified. Secondly, the surface of the ίο g is modified. 5^25 (Review 4) 6 25 Adding a polystyrene alcohol 3〇g dissolved in a mixed solution of water/dimethyl sulfoxide = 1/1 (3〇〇g) by a disperser A coating liquid for forming a red phosphor is prepared, and the coating liquid for forming a red phosphor prepared above is applied to a region of the glass on which the low reflection layer is not formed by a screen printing method. (200 ° C, 10 mmHg conditions) heating and drying for 4 hours to form a red phosphor layer with a film thickness of 50 μη. Secondly, the formation of the green phosphor layer is firstly directed to a gas phase cerium oxide having an average particle diameter of 5 nm. Add 0.1 g of ethanol and 0.1 g of γ-glycidoxypropyl I61804.doc -68 - 201240183 diethoxy decane 0.22 g, while stirring at room temperature for hrs. The mixture was mixed with green phosphor. BajiCU: Eu2+ was transferred to the mortar at 2〇g, and the mixture was ground and heated in a 70C oven for 2 hours. Heating in an oven for 2 hours to obtain a surface modified Ba2si〇4: Eu2+. Next, add 10 g of the surface modified Busier: Eu2+ by water/dimethyl sulfoxide = 1/丨The mixed solution (3 〇〇g) of the polystyrene alcohol 3 〇g' dissolved by the disperser was used to prepare a coating liquid for forming a green phosphor. The coating liquid for green phosphor formation prepared above was used. The screen printing method is applied to the region of the glass on which the low-reflection layer is not formed. Then, it is dried by heating in a vacuum oven (200 ° C, 10 mmHg) for 4 hours to form a green phosphor having a film thickness of 50 μm. Secondly, the formation of the blue scattering layer is a mixture solution of water particles/dimercaptosulfoxide = 1/1 (3 〇〇g) added to the stone particles of 1. 5 μπι (refractive index: 1.65) 20 g. The polystyrene alcohol 30 g' after the dissolution was mixed by a disperser to prepare a coating liquid for forming a blue scattering layer. The coating liquid for forming a blue scattering layer prepared above was coated by a screen printing method. a region on the above glass where no low reflection layer is formed. Then, in a vacuum oven (200 ° C, 10 mmHg) The inside was heated and dried for 4 hours to form a blue scattering layer. Next, an aluminum total reflection film was uniformly formed on the side surface of the phosphor layer by a sputtering method at a film thickness of 5 〇 nm. The surface of the optical layer on which the excitation light is incident is selected as a wavelength selective transmission reflection film, and titanium oxide (Ti〇2: refractive index = 2.30) and yttrium oxide (Si〇2: refractive index = 1.47) are used by EB. The dielectric multilayer film produced by the vapor deposition method alternately formed into a film layer of 161804.doc -69-201240183 was formed by a sputtering method at a film thickness of 1 〇〇 nm 2 . Next, on a glass substrate having a thickness of 0.7 mm, a silver film was formed to a thickness of 100 nm by a ruthenium plating method to form a reflective electrode, and an indium-tin oxide was formed by sputtering on the reflective electrode ( ITO) has a film thickness of 2 〇 nm, and forms a reflective electrode (anode) as a first electrode. Then, by the previous photolithography method, the first electrode has a width of 160 μm and a pitch of 2 〇〇 μπι is patterned into 90 stripes. The a' is deposited on the first electrode by iridium plating of 2 〇〇 nm of SiO 2 , and patterned by the previous photolithography method so as to cover only the edge portion of the first electrode. Here, the structure in which the short side is covered by Si〇2 to the extent that the end of the first electrode is 1 〇 μΓη is formed. After washing with water, i0 minute pure water ultrasonic cleaning, 10 minute acetone ultrasonic cleaning, and 5 minute isopropanol vapor cleaning were performed and the temperature was 120. (: drying for 1 hour. Next, the substrate was fixed on a substrate holder in a resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1×10 〇-4 Pa or less to form a film of each organic layer. First, as a hole The material was injected, and a hole injection layer having a film thickness of 1 〇〇nm was formed by a resistance heating evaporation method using 丨, bis-bis-4_triamine-phenyl-cyclohexene (TAPC). As a hole transporting material, di-1-naphthyl-N,N,-diphenyl-1,1'-biphenyl phenylene-4,4,-diamine (NPD) is used to heat the ore by electric resistance heating. The method forms a hole transport layer having a film thickness of 4 〇 nm. Then a blue organic light-emitting layer (thickness: 30 nm) is formed on the hole transport layer, and the blue organic light-emitting layer is made by 丨, 4_ double -triphenylsulfanylbenzene 161804.doc 201240183 (UGH-2) (host material) and bis[(4,6-difluorophenyl)-pyridine_n, C2,; K bite bismuth citrate (III) (FIrPic) (blue phosphorescent dopant) was prepared by co-evaporation at a vaporization rate of 1.5 A/sec and 0.2 A/sec. Then '2,9-dimercapyl was used on the luminescent layer. -4,7-two stupid 1 〇 morpholine (BCP) to form a hole Stop layer (thickness: i〇nm). Then, three (8-hydroxyquinoline) aluminum (Alq3) was used on the hole barrier layer to form an electron transport layer (thickness: 30 nm). Then, in the electron transport layer On the top, an electron injecting layer (thickness: 0.5 nm) was formed using lithium fluoride (LiF). Thereafter, a translucent electrode was formed as the second electrode. First, the substrate was fixed in a metal vaporizing chamber. The substrate and the second electrode are formed with a shadow mask (the opening is formed so as to form a second electrode in a stripe shape having a width of 500 μm and a pitch of 600 μm facing the stripe of the second electrode; The mask of the part is aligned, and on the surface of the electron injection layer, magnesium and silver are vapor-deposited at a vapor deposition rate of 〇A/sec and 〇9 A/sec, respectively, by co-evaporation. Magnesium silver is formed into a desired pattern (thickness: 1 nmp and further for the purpose of emphasizing interference effect, and preventing voltage drop due to wiring resistance of the second electrode, so that silver is i A/sec The vapor deposition rate is formed into a desired pattern (thickness: i9 nm). Here, as the organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be improved, thereby enabling The luminescence energy of the organic component is more efficiently transmitted to the phosphor layer. Similarly, the luminescence bee value is adjusted to the nm and half value width by the microcavity effect. 161804.doc C: -71 - 201240183 50 nm. Next, by the electropolymerization CVD method, the inorganic protective layer, which is called 3, is covered with a mask to form a sealed region from the end of the display portion to a sealing area of 2 mm above, below, and to the left and right. According to the above description, a light source substrate including an organic team element is produced. Next, the organic EL element substrate produced in the above manner is aligned with the phosphor substrate by the alignment marks formed on the outside of the display portion. Further, before this, the thermosetting resin was applied to the phosphor substrate, and the two substrates were adhered via the thermosetting resin, and heated at 8 Torr for 2 hours to cure the thermosetting resin. Further, in order to prevent deterioration of the organic EL due to moisture, the bonding step is performed in a dry air atmosphere (water content: _8 〇. 〇. Finally, by connecting the peripherally formed terminal to an external power source The organic EL display device is completed. Here, the required current is applied to the desired stripe electrode by an external power source, whereby the blue light-emitting organic EL can be set as an excitation light source capable of any switch. The light body layer and the green phosphor layer convert the light from the blue light into red, green 'to obtain the red and green isotropic light', and the isotropic blue light can be obtained by inserting the blue scattering layer. A good image with good color display and an image with good viewing angle characteristics can be obtained. (Example 7) [Active Driving Blue Organic EL + Phosphor Method] The phosphor substrate is the same as in the sixth embodiment. Manufactured on a 100x100 mm square glass substrate using the PECvD method to form -72-161804.doc

S 201240183 Amorphous germanium semiconductor film. Then, a polycrystalline germanium semiconductor film is formed by performing a crystallization treatment. Next, the polycrystalline germanium semiconductor film is patterned into a plurality of islands by photolithography. Then, a gate insulating film and a gate electrode layer are sequentially formed on the patterned polysilicon semiconductor layer, and patterned by photolithography. Thereafter, the patterned polycrystalline germanium semiconductor film is doped with an impurity element such as phosphorus to form a source and a non-polar region, thereby fabricating a TFT element. Thereafter, a planarizing film is formed. The flattening film is formed by sequentially laminating a nitride film or an acrylic resin layer formed by a PECVD method by a spin coater. First, after the tantalum nitride film is formed, the tantalum nitride film and the gate insulating film are collectively patterned to form a contact hole penetrating the source and/or the drain region, and then a source wiring is formed. Thereafter, an acrylic resin layer is formed, and a contact hole penetrating the electrodeless region is formed on the gate insulating film and the tantalum nitride film at the same position as the contact hole of the drained drain region, thereby completing the active matrix substrate. . The function as a planarizing film is achieved by an acrylic resin layer. Further, a capacitor for setting the gate potential of the TFT to a constant potential is formed by inserting an insulating film such as an interlayer insulating film between the drain of the switching TFT and the source of the driving TFT. A contact hole is formed in the active matrix substrate, and the contact hole penetrates the planarization layer, and the driving TFT, the first electrode of the red light-emitting organic EL element, the first electrode of the green light-emitting organic EL element, and the blue light-emitting organic EL element The first electrodes are electrically connected to each other. Next, a first electrode of each of the 161804.doc • 73-201240183 pixels is formed by sputtering by electrically connecting to a contact hole provided through a planarization layer for driving the TFTs of the respective OLEDs. anode). The first! The electrode was formed by laminating a film thickness of 15 〇 nmiAl (aluminum) and a film thickness of 2 〇 nm (indium oxide-zinc oxide). In the human, the second electrode is patterned into a shape corresponding to each pixel by a prior art photolithography method. Here, the area of the i-th electrode is set to 3 〇() μηηχΐ6〇 μπι. Further, it was formed on a substrate of 100 mm x 10 mm square. The display portion is 80 mm x 80 mm, and a sealing portion of 2 mm width is provided on the upper and lower sides of the display portion, and a terminal take-out portion of 2 mm is provided on the short side and outside the sealed portion. The long side is provided with a 2 mm width terminal take-out portion on one side of the fold. The person layered Si〇2 of 200 nm by the money ore method on the first electrode, and patterned by covering the edge portion of the second electrode by the previous photolithography method. Here, the structure in which the four sides are covered by si 〇 2 to the extent of 1 〇 μη ΐ 2 from the end of the i-th electrode is referred to as an edge shield. Next, the active substrate is cleaned. As the cleaning of the active substrate, for example, (4), IPA is used for ultrasonic cleaning for 1Q minutes, and then UV-ozone cleaning is performed for 30 minutes. Next, the substrate was fixed to a substrate holder in the in-line type resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum under H Paa. Film formation of each organic layer was carried out. First, as a hole injecting material, a hole injection layer of 1 μm was formed by a resistance heating steaming method using 151_bis-bis-4-triamino-phenyl-cyclohexyl (TAPC). . Secondly, as a hole transporting material, N, N, · di-丨-naphthyl·v, ν,-diphenyl·1,1'-linked $_1,1'-biphenyl_4,4,_ is used. Diamine (_), Shaw by the resistance heating 161804.doc 201240183 steaming method to form a hole transport layer with a thickness of 40 nm. Then, a blue organic light-emitting layer (thickness: 30 nm) was formed on the hole transport layer. The blue organic light-emitting layer is obtained by using i,4-bis-triphenylmethyl-benzene (UGH-2) (host material) and bis[(4,6-difluorophenyl)-pyridine-N, C2 The pyruvate speed of the '] picolinate cerium (III) (FIrpic) (blue filled luminescent dopant) was 1.5 A/sec and 0.2 A/sec, and co-steaming was carried out. Then, 2,9-dimercapto-4,7-diphenyl-1,1〇-morpholine (BCP) was used on the light-emitting layer to form a hole prevention layer (thickness: 1 〇. An electron transport layer (thickness: 30 nm) is formed on the hole barrier layer using tris(8.hydroxyquinoline)aluminum (Alq3). Then, lithium fluoride (LiF) is used on the electron transport layer to form an electron injection layer. (thickness: 0.5 nm). Thereafter, a semi-transparent electrode is formed as the second electrode. First, the substrate is fixed in a chamber for metal deposition, and secondly, a mask for forming the substrate and the second electrode is provided ( Aligning with the mask in which the second electrode is formed in a stripe shape with a width of 2 mm in the direction opposite to the stripe of the electrode described above, on the surface of the electron injection layer, by vacuum The steaming method makes the magnesium and silver respectively] A/see, " seven coffee ratios of the steaming speed into a total of 4 plating, and the magnesium and silver are formed into the desired pattern (thickness: 1 (four) and then on it to emphasize The purpose of the interference effect is to prevent the voltage drop caused by the resistance of the second electrode, so that the speed of the silver magic A/Sec The desired pattern (thickness: 19 nm) e is used to form the second electrode. Second:: organic element, microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode) , can improve the brightness of the front 161804.doc -75- 201240183, so that the luminescence energy from the organic components can be transmitted to the crab light layer more efficiently. Also, the luminescence peak is adjusted to 460 nm by the microcavity effect. The half value width is adjusted to 5〇ηηι. Next, the inorganic protective layer containing Si〇2 of 3 μm is patterned by the plasma CVD method from the end of the display portion to the upper, lower, left and right sides. By the above description, an active driving type organic EL element substrate is produced. Next, an active driving type organic EL element substrate fabricated as described above is formed by an alignment mark formed outside the display portion. In alignment with the phosphor substrate, the thermosetting resin is applied to the phosphor substrate, and the two substrates are adhered to each other via the thermosetting resin and heated at 9 〇〇c for 2 hours. Hardening of the hardened resin. For the purpose of preventing deterioration of the organic EL due to moisture, the bonding step is carried out in a dry air environment (water content: -8 (TC). Next, the polarizing plate is attached to the substrate in the light-emitting direction. The active drive type organic EL is completed. Finally, the terminal formed on the short side is connected to the power supply circuit via the source driver, and the terminal formed on the long side is connected to the external power supply via the gate driver, thereby completing the mmX8. Active-type organic EL display of the display unit of 〇min. Here, the required current is applied to each pixel by an external power source, and the blue light-emitting organic EL is set as an excitation light source capable of any switch, by the red camp The light body layer and the green phosphor layer convert the luminescence from blue light to red and green, respectively, thereby obtaining red and green isotropic luminescence, and by inserting blue-76·161804.doc

S 201240183 color scattering layer to obtain isotropic blue light. In this way, a good image with a full color display and an image with good viewing angle characteristics can be obtained. (Example 8) [Blue LED + phosphor method] A phosphor substrate was produced in the same manner as in Example 6. Using TMG (trimethylgallium) and \%, on the c-plane of the sapphire substrate placed in the reaction vessel, the buffer layer containing GaN is grown at a thickness of 55 nm (the thickness of 60 nm is increased. Next, the temperature is raised to 105 (rc). In addition to using cyanide and NH3, S1H4 gas was used, and a Si-doped n-type n-type contact layer having a thickness of 5 μm was grown. Then, tma (trimethylaluminum) was added to the material gas, similarly to 1050. (: a second cladding layer containing a Si-doped n-type Al〇.3Ga〇.7N layer having a thickness of 0.2 μπι. Next, 'the temperature is lowered to 850 ° C, and TMG, TMI (trimethyl indium), NH3 and S1H4, the first n-type cladding layer containing Si-doped Ιη〇·〇1 Ga〇99N grown at a thickness of 60 nm, and then grown at 850 ° C with a film thickness of 5 nm using TMG, yttrium and yttrium 3 Contains an activation layer of undoped In.5Ga0.95N. Further, in addition to TMG, TMI, and NH3, CPMg (cyclopentadienyl magnesium magnesium) is newly used, and Mg-containing film thickness of 60 nm is grown at 850 ° C. Doping the lp-type cladding layer of p-type In^GaowN. The 夂' raises the temperature to 11 〇〇 °C, and uses TMG, TMA, NH; j, CPMg' to grow a 150 nm film thickness package. a second p-type cladding layer containing Mg-doped p-type Al0.3Ga0.7N. Then, Tg-type contact layer of Mg-doped p-type GaN containing 600 nm film thickness is grown at 1100 ° C using TMG, ΝΗ 3 and CPMg The above operation ends -77· 161804.doc

S 201240183 After that, the temperature was lowered to room temperature, the wafer was taken out from the reaction container, and the wafer was annealed at 720 C to lower the resistance of the p-type layer. Next, a mask of a specific shape is formed on the surface of the uppermost P-type contact layer, and the surface is exposed until the surface of the n-type contact layer is exposed. After the last name, a negative electrode including titanium (Ti) and aluminum (Α1) is formed on the surface of the n-type contact layer, and a positive electrode containing nickel (Ni) and gold (Au) is formed on the surface of the p-type contact layer. After the formation, the wafer is separated into a 350 μηι square wafer, and then separately formed on a substrate for wiring connected to an external circuit, and the LED wafer fabricated as described above is fixed by a UV curing resin. The wiring is electrically connected to form a light source substrate including a blue LED. Next, the light source substrate produced in the above manner is aligned with the phosphor substrate by the alignment marks formed on the outside of the display portion. Further, before this, the thermosetting resin was applied onto the phosphor substrate, and the two substrates were adhered via a thermosetting resin, and heated at 80 °C for 2 hours to harden the thermosetting resin. Further, in order to prevent deterioration of the organic EL due to moisture, the bonding step is carried out in a dry air atmosphere (water content: _8 〇). Finally, the leD display device is completed by connecting the peripherally formed terminals to an external power source. Here, the required current is applied to the desired stripe electrode by an external power source, and the blue light-emitting organic EL is set as an excitation light source capable of arbitrarily switching, and the red phosphor layer and the green phosphor layer emit light. The blue light is converted into red and green, respectively, and red and green isotropic light is obtained, and isotropic blue light is obtained by inserting the blue scattering layer. As a result, a good image with full color display and a good viewing angle characteristic can be obtained. 161804.doc •78· 201240183

On the 0.7 mm glass substrate, the intermediate layer is formed by a tiny conical shape of y. Forming a gradient of refractive index and consisting of

Next, a glass substrate and an intermediate layer were bonded to each other by using a commercially available colorless transparent optical bonding polychlorinated oil # having a refractive index substantially equal to the refractive index of the glass substrate. Next, a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed on the intermediate layer to form a phosphor substrate. Forming a low-reflection layer containing a ladder shape of chromium on the substrate at a width of 20 μm, a film thickness of 5 〇〇 nm, and a thickness of 200 μm (the light absorbing layer is second, and the surface of the low-reflection layer is treated by CF4 plasma treatment) The formation of the red phosphor layer is first [2-[2-[4-(dimethylamino))]]vinyl]-6-mercapto-4Η-.pyran-4-ylidene]-propane Nitrile (DCM) (〇.〇2 mol/kg (solid content is prepared by mixing with an epoxide-based thermosetting resin by a mixer) to prepare a red phosphor-forming coating liquid. The coating liquid for forming a body is applied to the region of the glass on which the low-reflection layer is not formed by an inkjet method, and then hardened in a vacuum oven for 15 hours in a vacuum oven to form a film thickness of 2 μϊ. Red phosphor layer. Here, the cross-sectional shape of the red phosphor layer is a semi-cylindrical shape according to the effect of the water repellent treatment of the low-reflection layer. The formation of the green phosphor layer is first 2,3,6,7-tetrahydro-11-oxy-1H,5H,11H-[1]benzoquino[6,7,8-ij]quino-10-carboxylic acid (coumarin 519) (0.02 mol /kg (solid content ratio)) is mixed with an epoxide-based thermosetting resin, and a coating liquid for forming a green phosphor is prepared by stirring with a stirrer. The coating liquid for green phosphor formation prepared above is ink-jetted. The method was applied to a region of the above glass on which the low-reflection layer was not formed, and then hardened in a vacuum oven (at 150 ° C) for 1 hour to form a green phosphor layer having a film thickness of 2 μm. Here, the green phosphor layer The cross-sectional shape is a semi-cylindrical shape according to the effect of the water repellent treatment of the low-reflection layer. The formation of the blue phosphor layer is firstly based on 7-hydroxy-4-mercaptocoumarin (coumarin 4) (0.02 Mol/kg (solid content ratio) was mixed with an epoxide-based thermosetting resin, and a blue phosphor-forming coating liquid was prepared by stirring with a stirrer. The blue phosphor-forming coating liquid prepared above was used. The region on the glass which was not formed with the low-reflection layer was applied by an ink-jet method. Then, it was cured in a vacuum oven (at 150 ° C for 1 hour) to form a blue mortar layer having a film thickness of 2 μm. The cross-sectional shape of the blue phosphor layer is based on the low-reflection layer The effect of the water repellent treatment is a semi-cylindrical shape. Next, a total reflection film of aluminum is uniformly formed on the side surface of the phosphor layer by a sputtering method at a film thickness of 5 〇 nm 2 . The surface of the optical layer on which the excitation light is incident is used as a wavelength-selective transmission-reflecting film' to make titanium oxide (Ti〇2: refractive index = 2.30) and cerium oxide (Si〇2: refractive index = ι·47). Alternately formed by EB evaporation to 161804.doc -80-

S 201240183 A dielectric multilayer film produced by a film of 6 layers is formed by a sputtering method at a film thickness of 1 〇〇 nm. Next, 'the planarization film is formed by using an acrylic resin on the dielectric multilayer film by a spin coating method', and then formed into a polarizing film, a transparent electrode, and a light distribution film on the planarizing film by the prior method. A phosphor substrate is produced. Next, a switching element including a TFT is formed on the glass substrate by a prior method. Then, a 100 nm ITO transparent electrode was formed in a manner of electrically contacting the TFT via a contact hole. Next, the transparent electrode is patterned by the usual lithography method in such a manner as to be the same pitch as the pixels of the previously fabricated organic EL portion. Next, an alignment film is formed by a printing method. Next, the substrate on which the TFT was formed was bonded to the phosphor substrate via a spacer of 10 μηι, and a liquid crystal material of TN mode was injected between the substrates to complete the liquid crystal and glory body. Next, a reflective electrode is formed by depositing a silver film having a thickness of 100 nm on a glass substrate having a thickness of 0.7 mm, and a film having a film thickness of 20 nm is formed by sputtering on the reflective electrode. Tin oxide (IT〇), which forms a reflective electrode (anode) as the i-th electrode. Further, the first electrode is patterned in a desired size by the previous photolithography method. Next, 200 nm 2 Si 〇 2 was laminated on the first electrode by sputtering, and patterned by the previous photolithography method so as to cover only the edge portion of the second electrode. Here, it is assumed that the short side is covered by Si 〇 2 only by 1 〇 μπ ΐ 2 from the end of the first electrode. After washing with water, 1 minute of pure water ultrasonic cleaning, 1 minute of acetone ultrasonic cleaning, 5 minutes of isopropyl alcohol vapor cleaning, and drying at 120 ° C for 1 hour. I61804.doc -81 - 201240183 Next, the substrate is fixed to a substrate holder in a resistance heating and vaporizing apparatus, and a pressure of lxio·4 Pa or less is applied to a vacuum to form a film of each organic layer. First, as a hole injecting material, using 1,1 bis-bis-tetra-triamino-phenyl-cyclohexene (TAPC), a film thickness of 1 〇〇nm is formed by resistance heating evaporation. Hole injection layer. Next, as a hole transporting material, a hole transporting layer having a film thickness of 10 nm was formed by a resistance heating vapor deposition method using n-calene biphenyl (Cbp). Then, a near-ultraviolet organic light-emitting layer (thickness: 30 nm) is formed on the transport layer of the hole, and the near-ultraviolet organic light-emitting layer is made by making 3,5_bis(4_t-butyl-phenyl)-4 -Phenyl-[1,2,4]triazole (TAZ) (near-ultraviolet phosphorescent material) was produced by steaming at a steaming rate of 1.5 A/sec. Then, an electron transport layer is formed using 2,9-dimethyl-4,7-diphenyl_u〇_#«# (BCP) on the light-emitting layer (thickness: then, fluorine is used on the electron transport layer) Lithium (LiF) forms an electron injecting layer (thickness: 0, 5 nm). Thereafter, a semitransparent electrode is formed as the second electrode. First, the upper substrate is fixed in the metal vapor (four) chamber. Second, the substrate and the axe are made. a mask for forming an electrode (a mask in which an opening is formed so as to form a second pole in a stripe shape having a width of 500 μm and a pitch of 6 μm in a direction opposite to the stripe of the first pole) Aligning, on the surface of the electron injecting layer, magnesium and silver are co-steamed at a steaming rate of 〇i A/sec and 〇A/sec, respectively, by vacuum evaporation, and (iv) silver formation is required. Pattern (thickness: i nm). Further on it to emphasize the interference effect is 161804.doc

For the purpose of suppressing the voltage drop caused by the wiring resistance of the second electrode, silver is formed into a desired pattern (thickness: 19 (10)) at a steaming speed of 丄Α/sec. Thereby, the second electrode is formed. Here, as the organic EL element, a microcavity effect (interference effect) appears between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and the front luminance can be improved, and the light emitted from the organic EL element can be obtained. Can be transmitted to the phosphor layer more efficiently. χ Similarly, the luminescence peak is adjusted to 37G (10) by the microcavity effect, and the half value width is adjusted to 3 〇 nm °. Next, by using the plasma CVD method, the 3 μη χ is called the inorganic protective layer. The shadow mask is patterned from the end of the display portion to a sealing area of 2 mm up, down, left, and right. According to the above description, a light source substrate including an organic hole member was produced. Finally, the organic device and the liquid crystal phosphor portion are aligned and hardened by a thermosetting resin to complete the display device. Here, in order to cause the desired organic EL portion to emit light, a voltage required for application to the liquid crystal driving electrode is applied from an external power source, whereby an image having a desired good image and excellent viewing angle characteristics can be obtained. [Industrial Applicability] The aspect of the present invention can be applied to a phosphor substrate, various display devices using the phosphor substrate, and an illumination device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic cross-sectional view showing the entire configuration of a display device according to a first embodiment of the display device of the present invention. Fig. 1B is a cross-sectional view showing a principal part of a light source, showing a schematic configuration of a first embodiment of the display device of the present invention, 161804.doc; 83·201240183. Fig. 2A is a perspective view showing a schematic configuration of a minute structure. Fig. 2B is a side sectional view for explaining the structure of the minute structure. Fig. 3A is a schematic view for explaining a manufacturing step of a phosphor substrate. 3B is a schematic view for explaining a manufacturing step of the phosphor substrate. 3C is a schematic view for explaining a manufacturing step of the phosphor substrate. 3D is a schematic view for explaining a manufacturing step of a phosphor substrate. Circle 3E is a schematic view for explaining the manufacturing steps of the phosphor substrate. 3F is a schematic view for explaining a manufacturing step of the phosphor substrate. Fig. 3G is a schematic view for explaining a manufacturing step of the phosphor substrate. 3H is a schematic view for explaining a manufacturing step of the phosphor substrate. Figure 31 is a schematic view for explaining a manufacturing step of a phosphor substrate. Fig. 4 is a schematic cross-sectional view showing a display device according to a first modification of the second embodiment. Fig. 5A is a schematic cross-sectional view showing the entire display device according to a second modification of the second embodiment. Fig. 5B is a cross-sectional view showing a principal part of a light source of a display device according to a second modification of the first embodiment. Fig. 6A is a schematic cross-sectional view showing the entirety of a display device according to a third modification of the third embodiment. Fig. 6B is a cross-sectional view showing a principal part of a light source of a display device according to a third modification of the third embodiment. The circle 7 is a schematic cross-sectional view showing a schematic configuration of a second embodiment of the display device of the present invention. 1618〇4.d〇c • 84- 201240183 Fig. 8 is a plan view showing the display device of the second embodiment. Fig. 9 is a schematic cross-sectional view showing a schematic configuration of a third embodiment of the display device of the present invention. Fig. 10A is a schematic view showing an example of an electronic apparatus including the display device of the present invention. Fig. 10B is a schematic view showing an example of an electronic apparatus including the display device of the present invention. Fig. 11 is a cross-sectional view showing an example of an illumination device including the display device of the present invention. Fig. 12 is a schematic cross-sectional view showing the schematic configuration of a fourth embodiment of the display device of the present invention. Fig. 13A is a schematic side view showing a display device having a conventional phosphor substrate. Fig. 13B is a schematic side view showing a display device having a conventional phosphor substrate. [Description of main components] 1 Display device 2 Phosphor substrate 4 Organic EL device substrate (light source) 7B Phosphor layer 7G Phosphor layer 7R Phosphor layer 8 Reflecting layer 8a Reflecting layer 161804.doc -85- 201240183 9 Wavelength selection Transmissive layer 10 Intermediate layer 10a Microstructure 11 Protective layer 12 Organic EL element 13 Anode 14 Hole injection layer 15 Hole transport layer 16 Light-emitting layer 17 Hole barrier layer 18 Electron transport layer 19 Electron injection layer 20 Cathode 21 Edge protection Cover 22 Substrate 25 Display device 26 Phosphor substrate 27 Organic EL element substrate 28 Light scattering layer 30 Thin mold 31 Intermediate layer forming material 51 Display device 52 LED substrate (light source) 53 Substrate doc -86 - 201240183 54 First buffer layer 55 N-type contact layer 56 second n-type cladding layer 57 in-type cladding layer 58 activation layer 59 lp-type cladding layer 60 second p-type cladding layer 61 second buffer layer 62 cathode 63 anode 64 LED (light-emitting diode 67) Display device 68 Inorganic EL element substrate (light source) 69 Substrate 70 First electrode 71 First dielectric layer 72 Light-emitting layer 73 Second dielectric 74 second electrode 75 inorganic EL element 82 display device 83 organic EL element substrate (light source) 84 body 85 TFT 161804.doc -87- 201240183 86 gate electrode 87 gate line 88 gate insulating film 89 source electrode 90 drain Electrode 91 data line 92 planarization film 93 contact hole 94 pixel portion 95 gate signal drive circuit 96 data signal drive circuit 97 signal wiring 98 current supply line 99 flexible printed circuit board 111 external drive circuit 113 display device 114 organic EL element Substrate (light source) 115 Liquid crystal element 116 Organic EL element 117 Polarizing plate 118 Polarizing plate 119 Electrode 120 Electrode 121 Alignment film 161804.doc -88- 201240183 122 Alignment film 123 Substrate 124 Liquid crystal 127 Mobile phone 128 Main body 129 Display part 130 Sound input part 131 Sound output unit 132 Antenna 133 Operation switch 135 TV receiving device 136 Main cabinet 137 Display unit 138 Speaker 139 Bracket 141 Illumination device 142 Optical film 143 Phosphor substrate 144 Anode 145 Organic EL layer 146 Cathode 147 Organic EL element 148 Thermal diffusion plate 149 Sealing substrate 161804.doc -89- 201240183 150 Sealing resin 151 Heat radiating material 151 Phosphor substrate 152 Driving circuit 152 Substrate 153 Wiring 153R, 153G, 153 中间 Intermediate layer 154 Suspended ceiling 154 Light absorbing layer 155R, 155G, 155 萤Light body layer 156 Protective layer 157 Reflective layer 158 Wavelength selective transmission reflection film ΡΒ Blue pixel PG Green pixel PR Red pixel θ Vertex angle 161804.doc ·90·

Claims (1)

201240183 VII. Patent application scope: ι· A phosphor substrate comprising: a substrate; a first phosphor layer configured to generate fluorescence by incident excitation light to cause the generated light to be emitted from the light exit surface; An intermediate layer is disposed between the first phosphor layer and the substrate and has a refractive index gradient from a vicinity of the first phosphor layer to a vicinity of the substrate. 2. The phosphor substrate according to claim 1, wherein when the refractive index of the first phosphor layer is n1 and the refractive index of the substrate is "the refractive index of the first intermediate layer" The gradient from the first phosphor layer toward the substrate in the thickness direction orthogonal to the light-emitting surface is "in the range of Μ". 3. The phosphor substrate according to claim 1, wherein the first intermediate layer includes the above-described minute structure, and has a shape in which a cross-sectional area of the microstructure is reduced from the phosphor layer toward the substrate. 4. The phosphor substrate according to claim 3, wherein the minute structure has a substantially conical shape, and a vertex shape formed by a vertex portion of the substantially conical shape is 45 degrees or less. The phosphor substrate of claim 1, which is provided with a protective layer which is further on the outer surface of the substrate and has a refractive index gradient in a direction away from the outer surface of the substrate. 6. The phosphor substrate according to claim 5, wherein when the refractive index of the substrate is n3 and the refractive index of the air is n4, the refractive index of the protective layer is 161804.doc 201240183 A gradient that varies from n3 to n4 in the direction of the outer surface of the substrate and in the thickness direction orthogonal to the light-emitting surface. 7. The phosphor substrate according to claim 5, wherein the protective layer is formed of one or more minute structures, and has a shape in which a cross-sectional area of the microstructure is smaller from a vicinity of the substrate toward a vicinity of the outer layer. . 8. The phosphor substrate of claim 7, wherein the minute structure has a substantially conical shape, and a vertex shape formed by a vertex portion of the substantially conical shape is 45 or less. 9. The phosphor substrate of claim 1, wherein a reflective layer is provided on more than one of the sides of the first phosphor layer. 10. If requested! The phosphor substrate further includes a wavelength selective transmission transmissive layer, and the wavelength selective transmission reflection layer is configured to transmit at least a peak wavelength of the excitation light on a surface of the first phosphor layer on which the excitation light is incident. Light, and at least reflecting light of a peak wavelength of the first phosphor layer. The phosphor substrate of claim 1, wherein the first phosphor layer comprises a plurality of second phosphors that are divided corresponding to a specific region. And a first intermediate layer formed between the plurality of second phosphor layers and the substrate. 12. The phosphor substrate according to claim 1, wherein the plurality of second phosphor layers have refractive indices different from each other; and the first intermediate layer includes a plurality of second intermediate layers divided corresponding to a specific region; 161804 .doc 2 2 - S 201240183 The second intermediate layer of the plurality of complexes is respectively disposed between the plurality of second phosphor layers and the substrate; and the plurality of second intermediate layers have refractive index gradients different from each other. A display device comprising: the phosphor substrate of claim 1; and a light source ' comprising a first light-emitting element that emits excitation light that is incident on the first phosphor layer. 14. The display device according to claim 13, further comprising: a pixel including at least a red pixel for performing red light display, a green pixel for performing green light display, and a blue pixel for performing blue light display; and outputting from the light source The ultraviolet light of the excitation light; the red phosphor layer is provided with a red phosphor layer that emits red light as the excitation light as the excitation light, and the ultraviolet light is provided on the green pixel A green phosphor layer that emits green light as the excitation light, and a blue phosphor layer that emits blue light as the excitation light and emits blue light on the blue pixel. 15 t: The display device of claim 14 further comprises: a plurality of pixels, wherein the red pixel of the red light display, the green pixel for the green light display, and the blue pixel for the blue light display; a scattering layer disposed on the blue pixel to scatter the blue light; and emitting blue light as the excitation light from the light source; 161804.doc 201240183 as the second phosphor layer 'on the red pixel A red phosphor layer that emits red light by using the blue light as the excitation light is provided on the green pixel with a green phosphor layer that emits green light using the blue light as the excitation light. 16. The display device of claim 14, wherein the light source is an active matrix driving mode light source' and includes: a plurality of at least corresponding to each of the red pixel, the green pixel, and the blue pixel a second light emitting element; and a plurality of driving elements respectively driving the plurality of second light emitting elements. The display device of claim 16, wherein the plurality of driving elements are disposed on any one of the red phosphor layer, the green phosphor layer, and the blue working layer, and the plurality of driving elements are formed Between the substrates; and each of the red phosphor layer, the green phosphor layer, and the blue refractory layer emits light in a direction opposite to the plurality of driving elements. 18. The display device of claim 15, wherein the light source is an active matrix driving mode light source' and includes at least a plurality of colors corresponding to each of the red pixel, the green pixel, and the blue pixel. a second light emitting element; and a plurality of driving elements that respectively drive the plurality of second light emitting elements. The display device of claim 16, wherein the plurality of driving elements are disposed on any one of the red phosphor layer, the green phosphor layer, and the scattering layer, and a substrate on which the plurality of driving elements are formed. 161804.doc 201240183; and each of the red phosphor layer, the green phosphor layer, and the scattering layer emits light in a direction opposite to the plurality of driving elements. 20. 21. 22. 23. The display device of claim 13, wherein the light source comprises any one of a light-emitting diode organic electroluminescent element and an inorganic electroluminescent element. The display device according to claim 13, wherein a liquid crystal element is further provided between the source and the phosphor substrate, and the liquid crystal element is configured to control the light source corresponding to the red pixel, the green pixel, and the blue pixel. The transmittance of the emitted light; and the light source is a planar light source that emits light from the light exit surface. The display device of π, wherein the liquid crystal element is further disposed between the light source and the phosphor substrate, and the liquid crystal element is configured to control emission from the light source corresponding to the red pixel, the green pixel, and the blue pixel. The transmittance of the light; and the light source is a planar light source that emits light from the light exit surface. An illumination device comprising: a phosphor substrate as claimed in claim i; and a light source comprising a light-emitting element that emits excitation light that is incident on the phosphor layer. 161804.doc