10:第一暫時載板
10: The first temporary carrier board
10u、541a、541b:上表面
10u, 541a, 541b: upper surface
20:第二暫時載板
20: The second temporary carrier board
100、200、500:發光裝置
100, 200, 500: light-emitting device
100a:發光區
100a: luminous area
110、520a:第一發光元件
110, 520a: the first light-emitting element
111:承載基板
111: Carrier substrate
111a、112a:外表面
111a, 112a: outer surface
112:發光疊層
112: Light-emitting stack
140b:下表面
140b: bottom surface
112、526a:第一電極
112, 526a: first electrode
113、526b:第二電極
113, 526b: second electrode
110u、120u、130u:頂面
110u, 120u, 130u: top surface
120、520b:第二發光元件
120, 520b: second light-emitting element
130、520c:第三發光元件
130, 520c: third light-emitting element
140、560:反射圍欄
140, 560: reflective fence
150、250:顯色層
150, 250: color layer
150R1:第一區域
150R1: The first area
150R2:第二區域
150R2: second area
150R3:第三區域
150R3: The third area
151:透明材料
151: Transparent material
152、544a:第一波長轉換材料
152, 544a: the first wavelength conversion material
153、544b:第二波長轉換材料
153, 544b: second wavelength conversion material
160:黏合層
160: Adhesive layer
251:光吸收區
251: light absorption area
251a:網格
251a: Grid
520d:第四發光元件
520d: fourth light-emitting element
526c:第三電極
526c: third electrode
526d:第四電極
526d: fourth electrode
540a:第一波長轉換層
540a: The first wavelength conversion layer
540b:第二波長轉換層
540b: second wavelength conversion layer
542a、542b:接著劑
542a, 542b: Adhesive
561:頂表面
561: Top Surface
562:上部份
562: upper part
563:底表面
563: bottom surface
564:下部份
564: The next part
565:側表面
565: side surface
612:暫時性基板
612: Temporary Substrate
614:黏膠層
614: Adhesive layer
640a’、640a”:第一波長轉換層材料
640a’, 640a”: first wavelength conversion layer material
640b’、640b”:第二波長轉換層材料
640b’, 640b”: the material of the second wavelength conversion layer
642a’:部分的第一波長轉換層材料
642a’: Part of the first wavelength conversion layer material
660’:反射覆蓋物
660’: reflective covering
660a:反射圍欄下部
660a: The lower part of the reflective fence
660b:反射圍欄上部
660b: The upper part of the reflective fence
662:反射圍欄的移除部分
662: Removal part of reflective fence
700:發光模組
700: Light-emitting module
720:光學元件
720: optical components
740:承載板
740: Carrier Board
742:絕緣層
742: Insulation layer
744:電路層
744: Circuit Layer
C1:切割道
C1: Cutting road
L1:第一光線
L1: First light
L21:第二光線
L21: second light
L22:第三光線
L22: third ray
L31:第四光線
L31: Fourth ray
L32:第五光線
L32: Fifth ray
T1~T6:厚度
T1~T6: thickness
W1、W2:寬度
W1, W2: width
第1A圖繪示依照本發明一實施例之發光裝置的俯視圖。
FIG. 1A is a top view of a light emitting device according to an embodiment of the invention.
第1B圖繪示第1A圖之發光裝置沿方向1B-1B’的剖視圖。
Fig. 1B shows a cross-sectional view of the light-emitting device of Fig. 1A along the direction 1B-1B'.
第2A圖繪示依照本發明另一實施例之發光裝置的俯視圖。
FIG. 2A is a top view of a light emitting device according to another embodiment of the invention.
第2B圖繪示第2A圖之發光裝置沿方向2B-2B’的剖視圖。
Figure 2B shows a cross-sectional view of the light emitting device of Figure 2A along the direction 2B-2B'.
第3A1~3G2圖繪示第1B圖之發光裝置的製造過程圖。
Figures 3A1~3G2 show the manufacturing process diagram of the light-emitting device shown in Figure 1B.
第4A及4B圖繪示第2B圖之發光裝置的製程過程圖。
4A and 4B show the manufacturing process diagram of the light-emitting device of FIG. 2B.
第5A圖係顯示根據本發明另一實施例所揭露之發光裝置的俯視圖。
FIG. 5A is a top view of a light emitting device disclosed according to another embodiment of the invention.
第5B圖係顯示第5A圖之發光裝置沿方向A-A1的剖視圖。
Fig. 5B shows a cross-sectional view of the light-emitting device of Fig. 5A along the direction A-A1.
第5C圖係顯示第5A圖之發光裝置沿方向B-B1的剖視圖。
Fig. 5C shows a cross-sectional view of the light-emitting device of Fig. 5A along the direction B-B1.
第5D圖係顯示第5A圖之發光裝置的底部。
Figure 5D shows the bottom of the light-emitting device in Figure 5A.
第6A~第6I圖係顯示第5A圖之發光裝置的製造過程圖。
Figures 6A to 6I are diagrams showing the manufacturing process of the light-emitting device in Figure 5A.
第7A圖係顯示根據本發明一實施例所揭露之發光模組的俯視圖。
FIG. 7A is a top view of a light emitting module disclosed according to an embodiment of the present invention.
第7B圖係顯示第7A圖之發光模組沿方向A-A1的剖視圖。
Fig. 7B shows a cross-sectional view of the light-emitting module of Fig. 7A along the direction A-A1.
請參照第1A及1B圖，第1A圖繪示依照本發明一實施例之發光裝置100的俯視圖，而第1B圖繪示第1A圖之發光裝置100沿方向1B-1B’的剖視圖。
Please refer to FIGS. 1A and 1B. FIG. 1A is a top view of the light emitting device 100 according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view of the light emitting device 100 of FIG. 1A along the direction 1B-1B'.
發光裝置100包括第一發光元件110、第二發光元件120、第三發光元件130、反射圍欄140、顯色層150及黏合層160。
The light-emitting device 100 includes a first light-emitting element 110, a second light-emitting element 120, a third light-emitting element 130, a reflective fence 140, a color layer 150 and an adhesive layer 160.
在一實施例中，第一發光元件110、第二發光元件120與第三發光元件130為可發出相同波長或顏色的光線。例如，第一發光元件110、第二發光元件120與第三發光元件130可發出波峰不大於500奈米(nm)的光線，例如：藍光。藍光的主波長(dominant wavelength)或峰值波長(peak wavelength)大致介於430奈米(nm)~490nm之間。在另一實施例中，第一發光元件110、第二發光元件120與第三發光元件130發出的光線不限於藍光，亦可為具有其它波長範圍的色光，例如：紫光或紫外光。紫光的主波長(dominant wavelength)或峰值波長(peak wavelength)大致介於400nm至430nm之間。紫外光的峰值波長(peak wavelength)大致介於315nm至400nm之間。在另一實施例中，第一發光元件110、第二發光元件120與第三發光元件130可以是分別發出相異波長或
顏色的光線。在一實施例中，第一發光元件110發出藍光的光線，第二發光元件120及第三發光元件130發出紫外光的光線。
In an embodiment, the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 can emit light of the same wavelength or color. For example, the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 can emit light with a peak not greater than 500 nanometers (nm), such as blue light. The dominant wavelength or peak wavelength of blue light is approximately between 430 nanometers (nm) and 490 nm. In another embodiment, the light emitted by the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 is not limited to blue light, and may be colored light having other wavelength ranges, such as violet light or ultraviolet light. The dominant wavelength or peak wavelength of violet light is approximately between 400 nm and 430 nm. The peak wavelength of ultraviolet light is approximately between 315nm and 400nm. In another embodiment, the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 may emit different wavelengths or
Color light. In one embodiment, the first light emitting element 110 emits blue light, and the second light emitting element 120 and the third light emitting element 130 emit ultraviolet light.
此外，在一實施例中，第一發光元件110、第二發光元件120及第三發光元件130例如是發光二極體晶粒。
In addition, in an embodiment, the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 are, for example, light-emitting diode dies.
如第1B圖所示，第一發光元件110包括承載基板111、發光疊層112、第一電極113及第二電極114。承載基板111具有一外表面111a(亦稱第一外表面)，且發光疊層112具有一外表面112a(亦稱第二外表面)。在一實施例中，承載基板111為成長基板(growth substrate)，例如可以是藍寶石(sapphire)基板，作為發光疊層112磊晶成長時之基板。在另一實施例中，承載基板111並非成長基板，在製造第一發光元件110之製程中成長基板被移除或置換為其他基板(例如，不同材料、不同結構、或不同形狀的基板)。雖然圖未繪示，然發光疊層112包括數層半導體磊晶層。例如，發光疊層112依序包含第一型半導體層、發光層及第二型半導體層，其中發光層設於第一型半導體層與第二型半導體層之間。第一型半導體層例如是N型半導體層，而第二型半導體層則為P型半導體層；或是，第一型半導體層是P型半導體層，而第二型半導體層則為N型半導體層。在一實施例中，第一電極113及第二電極114位在第一發光元件110之同一側，作為第一發光元件110與外界電性連結之介面。
As shown in FIG. 1B, the first light-emitting element 110 includes a carrier substrate 111, a light-emitting stack 112, a first electrode 113 and a second electrode 114. The carrier substrate 111 has an outer surface 111a (also called a first outer surface), and the light-emitting stack 112 has an outer surface 112a (also called a second outer surface). In one embodiment, the carrier substrate 111 is a growth substrate, for example, a sapphire substrate, which serves as a substrate for epitaxial growth of the light-emitting stack 112. In another embodiment, the carrier substrate 111 is not a growth substrate, and the growth substrate is removed or replaced with another substrate (for example, a substrate of a different material, a different structure, or a different shape) during the process of manufacturing the first light-emitting element 110. Although not shown in the figure, the light-emitting stack 112 includes several semiconductor epitaxial layers. For example, the light-emitting stack 112 sequentially includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer, wherein the light-emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first type semiconductor layer is, for example, an N type semiconductor layer, and the second type semiconductor layer is a P type semiconductor layer; or, the first type semiconductor layer is a P type semiconductor layer, and the second type semiconductor layer is an N type semiconductor layer. Floor. In one embodiment, the first electrode 113 and the second electrode 114 are located on the same side of the first light-emitting element 110 and serve as an interface for electrically connecting the first light-emitting element 110 to the outside world.
第一電極113及第二電極114形成於發光疊層112下方，使第一發光元件110成為覆晶(flip-chip)。第二發光元件120及第三發光元件130具有或同於第一發光元件110的結構，於此不再贅述。
The first electrode 113 and the second electrode 114 are formed under the light-emitting stack 112 to make the first light-emitting element 110 a flip-chip. The second light-emitting element 120 and the third light-emitting element 130 have or have the same structure as the first light-emitting element 110, and will not be repeated here.
如第1B圖所示，反射圍欄140直接接觸第一發光元件110、第二發光元件120與第三發光元件130的側面，因此反射圍欄140與此些發光元件的
側面之間不具有間隙。如此，第一光線L1、第二光線L21及第四光線L31射出後直接接觸到反射圍欄140。反射圍欄140亦可部分接觸第一發光元件110、第二發光元件120與第三發光元件130的側面。或者，反射圍欄140與第一發光元件110、第二發光元件120與第三發光元件130的側面形成一個距離。在一實施例中，反射圍欄140具有一斜面或弧面(圖未示)，因此反射圍欄140的厚度並非是均一的。在一實施例中，反射圍欄140的厚度由第一外表面向第二外表面增加。
As shown in Figure 1B, the reflective fence 140 directly contacts the sides of the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130, so the reflective fence 140 and these light-emitting elements
There is no gap between the sides. In this way, the first light L1, the second light L21, and the fourth light L31 directly contact the reflection fence 140 after being emitted. The reflective fence 140 may also partially contact the side surfaces of the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130. Alternatively, the reflective fence 140 forms a distance from the side surfaces of the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130. In one embodiment, the reflective fence 140 has an inclined surface or a curved surface (not shown), so the thickness of the reflective fence 140 is not uniform. In an embodiment, the thickness of the reflective fence 140 increases from the first outer surface to the second outer surface.
如第1B圖所示，第一發光元件110、第二發光元件120、第三發光元件130及反射圍欄140構成一發光區100a。黏合層160位於發光區100a與顯色層150之間，以固定發光區100a與顯色層150的相對位置。黏合層160例如是透光黏合層。黏合層160可包括但不限於透光樹脂，而透光樹脂的材料包括但不限於矽膠(silicone)、環氧樹脂(epoxy resin)或其他合成樹脂。在另一實施例中，發光裝置100不包含黏合層160，顯色層150與發光區100a可直接黏合。
As shown in FIG. 1B, the first light-emitting element 110, the second light-emitting element 120, the third light-emitting element 130, and the reflective fence 140 constitute a light-emitting area 100a. The adhesion layer 160 is located between the light-emitting area 100 a and the color layer 150 to fix the relative position of the light-emitting area 100 a and the color layer 150. The adhesive layer 160 is, for example, a light-transmitting adhesive layer. The adhesive layer 160 may include, but is not limited to, a light-transmitting resin, and the material of the light-transmitting resin includes, but is not limited to, silicone, epoxy resin, or other synthetic resins. In another embodiment, the light-emitting device 100 does not include the adhesion layer 160, and the color layer 150 and the light-emitting region 100a can be directly bonded.
如第1B圖所示，反射圍欄140的下表面140b與發光疊層112的外表面112a大致齊平，且第一電極113及第二電極114突出超過發光疊層112的外表面112a，或是第一電極113及第二電極114的側壁及下表面並未被反射圍欄140所覆蓋。如此，當發光裝置100配置在一電子元件(未繪示)上時，第一電極113及第二電極114被導電材料，例如：錫膏，包覆的表面積更多，因此可提高發光裝置100與電子元件的接著強度。此處的電子元件例如是電路板。此外，第二發光元件120與反射圍欄140的關係以及第三發光元件130與反射圍欄140的關係類似或同於第一發光元件110與反射圍欄140的關係，於此不再贅述。
As shown in Figure 1B, the lower surface 140b of the reflective fence 140 is approximately flush with the outer surface 112a of the light-emitting stack 112, and the first electrode 113 and the second electrode 114 protrude beyond the outer surface 112a of the light-emitting stack 112, or The sidewalls and lower surfaces of the first electrode 113 and the second electrode 114 are not covered by the reflective fence 140. In this way, when the light-emitting device 100 is configured on an electronic component (not shown), the first electrode 113 and the second electrode 114 are covered with conductive materials, such as solder paste, to cover more surface area, so the light-emitting device 100 can be improved. Adhesion strength to electronic components. The electronic component here is, for example, a circuit board. In addition, the relationship between the second light-emitting element 120 and the reflective fence 140 and the relationship between the third light-emitting element 130 and the reflective fence 140 are similar or the same as the relationship between the first light-emitting element 110 and the reflective fence 140, and will not be repeated here.
在一實施例中，反射圍欄140的組成中包含樹脂以及分散於樹脂內的反射粒子，例如：氧化鈦(titanium oxide)、氧化鋅、氧化鋁、硫酸鋇或碳酸鈣。於一實施例中，反射粒子為氧化鈦，氧化鈦相對於反射圍欄140的重量百分比不小於60%，於另一實施例中，氧化鈦相對於反射圍欄140的重量百分比在10%至60%之間。於一實施例中，反射圍欄140之厚度在10微米(μm)至200微米之間。於另一實施例中，反射圍欄140之厚度在20微米至100微米之間。
In one embodiment, the composition of the reflective fence 140 includes a resin and reflective particles dispersed in the resin, such as titanium oxide, zinc oxide, aluminum oxide, barium sulfate, or calcium carbonate. In one embodiment, the reflective particles are titanium oxide, and the weight percentage of titanium oxide relative to the reflective fence 140 is not less than 60%. In another embodiment, the weight percentage of titanium oxide relative to the reflective fence 140 is 10% to 60%. between. In one embodiment, the thickness of the reflective fence 140 is between 10 micrometers (μm) and 200 micrometers. In another embodiment, the thickness of the reflective fence 140 is between 20 μm and 100 μm.
如第1B圖所示，顯色層150包括第一區域150R1、第二區域150R2及第三區域150R3。第一區域150R1覆蓋第一發光元件110，並允許第一光線L1直接通過。第二區域150R2覆蓋第二發光元件120並包含波長轉換材料(亦稱第一波長轉換材料)，將第二光線L21轉換成一波峰大於500nm的第三光線L22，例如，將藍光轉換成綠光。綠光波長大致介於510nm至560nm之間。相似地，第三區域150R3覆蓋第三發光元件130並包含另一波長轉換材料(亦稱第二波長轉換材料)，將第四光線L31轉換成一波峰大於500nm的第五光線L32。第五光線L32的波長可與第三光線L22的波長相異，例如，第五光線L32為紅光，紅光波長大致介於600nm至660nm之間。在另一實施例中，第三光線L22與第五光線L32可以是與前述色光相異的色光。第一區域150R1、第二區域150R2及第三區域150R3可顯示不同顏色的光，所對應顏色的排列也可依需要做調整。在另一實施例中，第一區域150R1發出綠光，第二區域150R2發出紅光，以及第三區域150R3發出藍光。
As shown in FIG. 1B, the color layer 150 includes a first region 150R1, a second region 150R2, and a third region 150R3. The first area 150R1 covers the first light emitting element 110 and allows the first light L1 to pass directly. The second area 150R2 covers the second light-emitting element 120 and contains a wavelength conversion material (also called a first wavelength conversion material), which converts the second light L21 into a third light L22 with a peak greater than 500 nm, for example, converts blue light into green light. The wavelength of green light is roughly between 510nm and 560nm. Similarly, the third region 150R3 covers the third light-emitting element 130 and includes another wavelength conversion material (also called a second wavelength conversion material), which converts the fourth light L31 into a fifth light L32 with a peak greater than 500 nm. The wavelength of the fifth light L32 may be different from the wavelength of the third light L22. For example, the fifth light L32 is red light, and the wavelength of the red light is approximately between 600 nm and 660 nm. In another embodiment, the third light L22 and the fifth light L32 may be colored lights different from the foregoing colored lights. The first area 150R1, the second area 150R2, and the third area 150R3 can display light of different colors, and the arrangement of the corresponding colors can also be adjusted as needed. In another embodiment, the first area 150R1 emits green light, the second area 150R2 emits red light, and the third area 150R3 emits blue light.
顯色層150中，第一區域150R1可包含透明材料151(亦稱第一透明材料)，第二區域150R2可包含第一波長轉換材料152，以及第三區域150R3
可包含第二波長轉換材料153。在一實施例中，第二區域150R2包含透明材料154(亦稱第二透明材料)以及分散在透明材料154中的第一波長轉換材料152。在一實施例中，第三區域150R3包含透明材料155(亦稱第三透明材料)以及分散在透明材料155中的第二波長轉換材料153。透明材料例如是矽膠或環氧樹脂。第一透明材料，第二透明材料以及第三透明材料彼此可以相同或不同。第一波長轉換材料152例如是可將第二光線L21轉換成第三光線L22的螢光顆粒，而第二波長轉換材料153例如是可將第四光線L31轉換成第五光線L32的螢光顆粒。顯色層150的第一區域150R1只包含第一透明材料151，不包含任何波長轉換材料，因此通過第一區域150R1的第一光線L1仍保持原本光色。第二區域150R2包含透明材料154及第一波長轉換材料152，因此能將第二光線L21轉換成不同波長的第三光線L22。第三區域150R3包含透明材料155及第二波長轉換材料153，因此能將第四光線L31轉換成不同波長的第五光線L32。在另一實施例中，顯色層150中，第一區域150R1包含第一波長轉換材料，第二區域150R2包含第二波長轉換材料，以及第三區域150R3可包含第三波長轉換材料(圖未示)。
In the color layer 150, the first region 150R1 may include a transparent material 151 (also referred to as a first transparent material), the second region 150R2 may include a first wavelength conversion material 152, and a third region 150R3
The second wavelength conversion material 153 may be included. In one embodiment, the second region 150R2 includes a transparent material 154 (also referred to as a second transparent material) and a first wavelength conversion material 152 dispersed in the transparent material 154. In an embodiment, the third region 150R3 includes a transparent material 155 (also referred to as a third transparent material) and a second wavelength conversion material 153 dispersed in the transparent material 155. The transparent material is, for example, silicone or epoxy. The first transparent material, the second transparent material, and the third transparent material may be the same or different from each other. The first wavelength conversion material 152 is, for example, a fluorescent particle that can convert the second light L21 into a third light L22, and the second wavelength conversion material 153 is, for example, a fluorescent particle that can convert the fourth light L31 into a fifth light L32. . The first region 150R1 of the color layer 150 only includes the first transparent material 151 and does not include any wavelength conversion material. Therefore, the first light L1 passing through the first region 150R1 still maintains the original light color. The second region 150R2 includes a transparent material 154 and a first wavelength conversion material 152, so that the second light L21 can be converted into a third light L22 of a different wavelength. The third area 150R3 includes a transparent material 155 and a second wavelength conversion material 153, so that the fourth light L31 can be converted into a fifth light L32 of a different wavelength. In another embodiment, in the color layer 150, the first region 150R1 includes a first wavelength conversion material, the second region 150R2 includes a second wavelength conversion material, and the third region 150R3 may include a third wavelength conversion material (not shown) Show).
在一實施例中，顯色層150可以是片狀的透明材料151中摻雜第一波長轉換材料152及/或第二波長轉換材料153所形成，其中未摻雜波長轉換材料的區域定義為第一區域150R1，摻雜有第一波長轉換材料152的區域定義為第二區域150R2，而摻雜有第二波長轉換材料153的區域定義為第三區域150R3。在發光裝置100的製程中，顯色層150可另外製作完成後，然後再貼附在發光元件上。另外製作的顯色層150本身為片狀且具有可撓性。
In an embodiment, the color layer 150 may be formed by doping the first wavelength conversion material 152 and/or the second wavelength conversion material 153 into a sheet-shaped transparent material 151, and the region where the wavelength conversion material is not doped is defined as In the first region 150R1, the region doped with the first wavelength conversion material 152 is defined as the second region 150R2, and the region doped with the second wavelength conversion material 153 is defined as the third region 150R3. During the manufacturing process of the light-emitting device 100, the color layer 150 may be separately fabricated and then attached to the light-emitting element. In addition, the color-developing layer 150 itself is sheet-shaped and flexible.
在一實施例中，第一波長轉換材料152及/或第二波長轉換材料153及/或第三波長轉換材料，例如是無機的螢光粉(phosphor)、有機分子螢光色素(organic fluorescent colorant)、半導體材料(semiconductor)、或上述材料的組合。半導體材料包含奈米尺寸結晶體(nano crystal)的半導體材料，例如量子點(quantum-dot)發光材料。在一實施例中，無機的螢光粉可選自於由Y3Al5O12：Ce、Gd3Ga5O12：Ce、Lu3Al5O12：Ce、(Lu、Y)3Al5O12：Ce、Tb3Al5O12：Ce、SrS：Eu、SrGa2S4：Eu、(Sr、Ca、Ba)(Al、Ga)2S4：Eu、(Ca、Sr)S：(Eu、Mn)、(Ca、Sr)S：Ce、(Sr、Ba、Ca)2Si5N8：Eu、(Sr、Ba、Ca)(Al、Ga)SiN3：Eu、SrLiAl3N4：Eu2+、CaAlSi ON：Eu、(Ba、Sr、Ca)2SiO4：Eu、(Ca、Sr、Ba)8MgSi4O16(F,Cl,Br)2：Eu、(Ca、Sr、Ba)Si2O2N2：Eu、K2SiF6：Mn、K2TiF6：Mn、及K2SnF6：Mn所組成之群組。半導體材料可包含II-VI族半導體化合物、III-V族半導體化合物、IV-VI族半導體化合物、或上述材料的組合。量子點發光材料可包含主要發光的核心區(core)以及包覆核心區的殼(shell)，核心區的材料可選自於由硫化鋅(ZnS)、硒化鋅(ZnSe)、碲化鋅(ZnTe)、氧化鋅(ZnO)、硫化鎘(CdS)、硒化鎘(CdSe)、碲化鎘(CdTe)、氯化銫鉛(CsPbCl3)、溴化銫鉛(CsPbBr3)、碘化銫鉛(CsPbI3)、氮化鎵(GaN)、磷化鎵(GaP)、硒化鎵(GaSe)、銻化鎵(GaSb)、砷化鎵(GaAs)、氮化鋁(AlN)、磷化鋁(AlP)、砷化鋁(AlAs)、磷化銦(InP)、砷化銦(InAs)、碲(Te)、硫化鉛(PbS)、銻化銦(InSb)、碲化鉛(PbTe)、硒化鉛(PbSe)、碲化銻(SbTe)、硒化鋅鎘(ZnCdSe)、硫化鋅鎘硒(ZnCdSeS)、及硫化銅銦(CuInS)所組成之群組。
In an embodiment, the first wavelength conversion material 152 and/or the second wavelength conversion material 153 and/or the third wavelength conversion material are, for example, inorganic phosphors, organic fluorescent colorants (organic fluorescent colorants). ), semiconductor material (semiconductor), or a combination of the above materials. The semiconductor material includes nano-crystal semiconductor materials, such as quantum-dot light-emitting materials. In one embodiment, the inorganic phosphor can be selected from Y 3 Al 5 O 12 : Ce, Gd 3 Ga 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, (Lu, Y) 3 Al 5 O 12 : Ce, Tb 3 Al 5 O 12 : Ce, SrS: Eu, SrGa 2 S 4 : Eu, (Sr, Ca, Ba)(Al, Ga) 2 S 4 : Eu, (Ca, Sr)S : (Eu, Mn), (Ca, Sr) S: Ce, (Sr, Ba, Ca) 2 Si 5 N 8 : Eu, (Sr, Ba, Ca) (Al, Ga) SiN 3 : Eu, SrLiAl 3 N 4 : Eu 2+ , CaAlSi ON: Eu, (Ba, Sr, Ca) 2 SiO 4 : Eu, (Ca, Sr, Ba) 8 MgSi 4 O 16 (F, Cl, Br) 2 : Eu, (Ca , Sr, Ba) Si 2 O 2 N 2 : Eu, K 2 SiF 6 : Mn, K 2 TiF 6 : Mn, and K 2 SnF 6 : Mn. The semiconductor material may include a group II-VI semiconductor compound, a group III-V semiconductor compound, a group IV-VI semiconductor compound, or a combination of the foregoing materials. The quantum dot luminescent material may include a core area that mainly emits light and a shell covering the core area. The material of the core area may be selected from zinc sulfide (ZnS), zinc selenide (ZnSe), and zinc telluride. (ZnTe), zinc oxide (ZnO), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), cesium lead chloride (CsPbCl 3 ), cesium lead bromide (CsPbBr 3 ), iodide Cesium lead (CsPbI 3 ), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide (GaSe), gallium antimonide (GaSb), gallium arsenide (GaAs), aluminum nitride (AlN), phosphorus Aluminum (AlP), aluminum arsenide (AlAs), indium phosphide (InP), indium arsenide (InAs), tellurium (Te), lead sulfide (PbS), indium antimonide (InSb), lead telluride (PbTe) ), lead selenide (PbSe), antimony telluride (SbTe), zinc cadmium selenide (ZnCdSe), zinc cadmium selenium sulfide (ZnCdSeS), and copper indium sulfide (CuInS).
在本實施例中，顯色層150可將一光色完全轉換成另一光色。例如，第二區域150R2可將第二光線L21完全轉換成第三光線L22。換言之，第三光線L22是第二光線L21被完全轉換後形成，而非二光色混光而成。同理，第五光線L32是第四光線L31被完全轉換後形成，而非二光色混光而成。
In this embodiment, the color rendering layer 150 can completely convert one light color into another light color. For example, the second area 150R2 can completely convert the second light L21 into the third light L22. In other words, the third light L22 is formed after the second light L21 is completely converted, and is not formed by mixing two light colors. In the same way, the fifth light L32 is formed after the fourth light L31 is completely converted, instead of being formed by mixing two light colors.
如第1B圖所示，第一發光元件110可發出第一光線L1，第二發光元件120可發出第二光線L21，而第三發光元件130可發出第四光線L31。在一實施例中，第一光線L1、第二光線L21及第四光線L31可發出藍光。反射圍欄140位於第一發光元件110與第二發光元件120之間以及第二發光元件120與第三發光元件130之間，並環繞第一發光元件110、第二發光元件120與第三發光元件130的側面，以將第一光線L1、第二光線L21及第四光線L31反射後朝向顯色層150的方向。如此，可避免相鄰二發光元件的光線在入射至顯色層150前混光。
As shown in FIG. 1B, the first light-emitting element 110 can emit a first light L1, the second light-emitting element 120 can emit a second light L21, and the third light-emitting element 130 can emit a fourth light L31. In an embodiment, the first light L1, the second light L21, and the fourth light L31 can emit blue light. The reflective fence 140 is located between the first light-emitting element 110 and the second light-emitting element 120 and between the second light-emitting element 120 and the third light-emitting element 130, and surrounds the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element The side surface of 130 reflects the first light L1, the second light L21, and the fourth light L31 toward the color layer 150. In this way, the light from two adjacent light-emitting elements can be prevented from being mixed before being incident on the color layer 150.
前述實施例之發光裝置100係以包含三個發光元件為例說明。然在另一實施例中，發光裝置100可省略第二發光元件120與第三發光元件130之一者，且對應地省略第二區域150R2或第三區域150R3。
The light-emitting device 100 of the foregoing embodiment is illustrated by taking three light-emitting elements as an example. However, in another embodiment, the light emitting device 100 may omit one of the second light emitting element 120 and the third light emitting element 130, and correspondingly omit the second region 150R2 or the third region 150R3.
綜上，發光裝置100可發出至少二種不同光色的色光，成為一自發光的發光結構。發光裝置100可整合在一顯示裝置中，例如發光裝置100與顯示裝置的液晶顯示面板結合，以顯示一彩色畫面。在此設計下，顯示裝置可省略彩色濾光片及背光模組。換言之，發光裝置100提供了類似有機發光二極體的自發光功能。在配置上，一發光裝置100的一個區域(第一區域150R1、第二區域150R2或第三區域150R3)可對應液晶顯示面板的一個畫素區。
In summary, the light-emitting device 100 can emit at least two different light colors to form a self-luminous light-emitting structure. The light-emitting device 100 can be integrated into a display device, for example, the light-emitting device 100 is combined with a liquid crystal display panel of the display device to display a color image. Under this design, the display device can omit the color filter and the backlight module. In other words, the light emitting device 100 provides a self-luminous function similar to an organic light emitting diode. In terms of configuration, a region (the first region 150R1, the second region 150R2 or the third region 150R3) of a light emitting device 100 can correspond to a pixel region of the liquid crystal display panel.
請參照第2A及2B圖，第2A圖繪示依照本發明另一實施例之發光裝置200的俯視圖，而第2B圖繪示第2A圖之發光裝置200沿方向2B-2B’的剖視圖。發光裝置200包括第一發光元件110、第二發光元件120、第三發光元件130、反射圍欄140、顯色層250及黏合層160。
Please refer to FIGS. 2A and 2B. FIG. 2A is a top view of a light emitting device 200 according to another embodiment of the present invention, and FIG. 2B is a cross-sectional view of the light emitting device 200 of FIG. 2A along the direction 2B-2B'. The light-emitting device 200 includes a first light-emitting element 110, a second light-emitting element 120, a third light-emitting element 130, a reflective fence 140, a color layer 250, and an adhesive layer 160.
發光裝置200具有類似前述發光裝置100的結構，不同處在於，發光裝置200之顯色層250的結構不同於顯色層150。
The light-emitting device 200 has a structure similar to the aforementioned light-emitting device 100, except that the structure of the color-developing layer 250 of the light-emitting device 200 is different from that of the color-developing layer 150.
顯色層250包括第一區域150R1、第二區域150R2及第三區域150R3及光吸收區251。光吸收區251位於第一區域150R1、第二區域150R2與第三區域150R3之間，且圍繞第一區域150R1的側面、第二區域150R2的側面及第三區域150R3的側面。例如，光吸收區251直接接觸第一區域150R1的側面、第二區域150R2的側面及第三區域150R3的側面。光吸收區251具有數個網格251a，網格251a為光吸收區251的貫穿部。顯色層250的一個區域(如第一區域150R1、第二區域150R2或第三區域150R3)位於對應的一個網格251a內。顯色層250的相鄰二區域被網格251a完全隔離。
The color layer 250 includes a first region 150R1, a second region 150R2, a third region 150R3, and a light absorption region 251. The light absorption region 251 is located between the first region 150R1, the second region 150R2, and the third region 150R3, and surrounds the sides of the first region 150R1, the side of the second region 150R2, and the side of the third region 150R3. For example, the light absorbing region 251 directly contacts the side surface of the first region 150R1, the side surface of the second region 150R2, and the side surface of the third region 150R3. The light absorbing area 251 has a plurality of grids 251 a, and the grids 251 a are the penetrating parts of the light absorbing area 251. A region of the color layer 250 (for example, the first region 150R1, the second region 150R2, or the third region 150R3) is located in a corresponding grid 251a. The two adjacent regions of the color layer 250 are completely separated by the grid 251a.
光吸收區251可吸收通過顯色層250的光線(如第一光線L1、第三光線L22及第五光線L32)，可避免顯色層250的一區域內的光線穿透至另一區域而與該另一區域的光線混光。如此，發光裝置200發出的色光可保持顯色層250中所欲表現的光色。詳言之，由於光吸收區251的設計，使發光裝置200可發出非混光的藍光、綠光及紅光。
The light absorbing region 251 can absorb light passing through the color layer 250 (such as the first light L1, the third light L22, and the fifth light L32), and can prevent the light in one area of the color layer 250 from penetrating to another area. Mix the light with the light from the other area. In this way, the colored light emitted by the light-emitting device 200 can maintain the desired light color in the color developing layer 250. In detail, due to the design of the light absorption region 251, the light emitting device 200 can emit non-mixed blue light, green light, and red light.
在一實施例中，光吸收區251具有光密度(Optical Density,OD)不小於1的性質。在另一實施例中，光吸收區251具有光密度不小於2的性質。其中，光密度為遮光能力的特徵，OD=log(入射光強度/透射光強度)。光吸收
區251中，第一區域150R1的側面與第二區域150R2的側面之間的光吸收厚度T1、第二區域150R2的側面與第三區域150R3的側面之間的光吸收厚度T2、第一區域150R1外側面的光吸收厚度T3及第三區域150R3外側面的光吸收厚度T4彼此可以相同或不同。在一實施例中，光吸收厚度在0.1微米到100微米之間。在另一實施例中，光吸收厚度在0.5微米到20微米之間。在一實施例中，第一區域150R1的寬度與光吸收厚度的比值在2到3000之間。在另一實施例中，第一區域150R1的寬度與光吸收厚度的比值在5到30之間。在一實施例中，第一區域150R1的寬度與第一發光元件110的寬度的比值在1.0到2.0之間。在另一實施例中，第一區域150R1的寬度與第一發光元件110的寬度的比值在1.05到1.5之間。光吸收區251的材料可以是包含光吸收的材料，例如：黑色樹脂，黑色油墨或鍍鎳層。
In one embodiment, the light absorption region 251 has the property that the optical density (OD) is not less than one. In another embodiment, the light absorption region 251 has a property that the optical density is not less than 2. Among them, the optical density is the characteristic of the light-shielding ability, OD=log (incident light intensity/transmitted light intensity). Light absorption
In the region 251, the light absorption thickness T1 between the side surface of the first region 150R1 and the side surface of the second region 150R2, the light absorption thickness T2 between the side surface of the second region 150R2 and the side surface of the third region 150R3, and the first region 150R1 The light absorption thickness T3 of the outer surface and the light absorption thickness T4 of the outer surface of the third region 150R3 may be the same or different from each other. In one embodiment, the light absorption thickness is between 0.1 μm and 100 μm. In another embodiment, the light absorption thickness is between 0.5 μm and 20 μm. In an embodiment, the ratio of the width of the first region 150R1 to the light absorption thickness is between 2 and 3000. In another embodiment, the ratio of the width of the first region 150R1 to the light absorption thickness is between 5 and 30. In an embodiment, the ratio of the width of the first region 150R1 to the width of the first light-emitting element 110 is between 1.0 and 2.0. In another embodiment, the ratio of the width of the first region 150R1 to the width of the first light-emitting element 110 is between 1.05 and 1.5. The material of the light absorption region 251 may be a material containing light absorption, such as black resin, black ink, or a nickel-plated layer.
請參照第3A1~3G2圖，其繪示第1B圖之發光裝置100的製造過程圖。
Please refer to FIGS. 3A1 to 3G2, which show a manufacturing process diagram of the light emitting device 100 in FIG. 1B.
如第3A1及3A2圖所示，其中第3A1圖繪示數個發光元件配置在第一暫時載板10上的示意圖，而第3A2圖繪示第3A1圖之結構沿方向3A2-3A2’的剖視圖。
As shown in Figs. 3A1 and 3A2, Fig. 3A1 shows a schematic diagram of several light-emitting elements arranged on the first temporary carrier 10, and Fig. 3A2 shows a cross-sectional view of the structure of Fig. 3A1 along the direction 3A2-3A2' .
在本步驟中，可採用例如是表面黏貼技術(Surface Mount Technology,SMT)，設置至少一第一發光元件110、至少一第二發光元件120及至少一第三發光元件130在第一暫時載板10上，其中第一發光元件110、第二發光元件120及第三發光元件130可分別用以發出一波峰不大於500nm的第一光線L1、第二光線L21及第四光線L31。
In this step, for example, Surface Mount Technology (SMT) can be used to arrange at least one first light-emitting element 110, at least one second light-emitting element 120, and at least one third light-emitting element 130 on the first temporary carrier board. 10, the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 can respectively be used to emit a first light L1, a second light L21, and a fourth light L31 with a peak not greater than 500 nm.
如第3A1圖所示，數個第一發光元件110、數個第二發光元件120及數個第三發光元件130沿一第一直線排列成直線，其中第一直線例如是X軸向。在另一實施例中，整排第一發光元件110、整排第二發光元件120與整排第三發光元件130沿第二直線排列，第二直線例如是Y軸向。
As shown in FIG. 3A1, a plurality of first light-emitting elements 110, a plurality of second light-emitting elements 120, and a plurality of third light-emitting elements 130 are arranged in a straight line along a first straight line, where the first straight line is, for example, the X-axis. In another embodiment, the entire row of the first light-emitting elements 110, the entire row of the second light-emitting elements 120, and the entire row of the third light-emitting elements 130 are arranged along a second straight line, and the second straight line is, for example, the Y-axis.
如第3A2圖的放大圖所示，第一發光元件110包括承載基板111、發光疊層112、第一電極113及第二電極114，其中發光疊層112包括數層半導體磊晶層，第一電極113及第二電極114形成於承載基板下方，使第一發光元件110成為覆晶。如第3A2圖所示，第一電極113及第二電極114的至少一部分陷入第一暫時載板10內。如此，使後續完成的發光裝置100中，第一發光元件110的電極可突出超過反射圍欄140的下表面140b，如第1B圖所示。在另一實施例中，第一電極113的端面及第二電極114的端面可接觸第一暫時載板10的上表面10u，而不陷入第一暫時載板10內。此外，第二發光元件120及第三發光元件130具有類似或同於第一發光元件110的結構，於此不再贅述。
As shown in the enlarged view of FIG. 3A2, the first light-emitting element 110 includes a carrier substrate 111, a light-emitting stack 112, a first electrode 113, and a second electrode 114. The light-emitting stack 112 includes several semiconductor epitaxial layers. The electrode 113 and the second electrode 114 are formed under the carrier substrate, so that the first light-emitting element 110 becomes a flip chip. As shown in FIG. 3A2, at least a part of the first electrode 113 and the second electrode 114 is trapped in the first temporary carrier board 10. In this way, in the subsequently completed light-emitting device 100, the electrode of the first light-emitting element 110 can protrude beyond the lower surface 140b of the reflective fence 140, as shown in FIG. 1B. In another embodiment, the end surface of the first electrode 113 and the end surface of the second electrode 114 can contact the upper surface 10 u of the first temporary carrier board 10 without sinking into the first temporary carrier board 10. In addition, the second light-emitting element 120 and the third light-emitting element 130 have a structure similar or the same as that of the first light-emitting element 110, which will not be repeated here.
然後，如第3B圖所示，可採用例如是塗佈技術，形成反射圍欄140於第一發光元件110、第二發光元件120與第三發光元件130之間，其中反射圍欄140環繞第一發光元件110、第二發光元件120與第三發光元件130。如圖所示，反射圍欄140更覆蓋第一發光元件110、第二發光元件120與第三發光元件130的頂面。
Then, as shown in Figure 3B, a coating technique can be used, for example, to form a reflective fence 140 between the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130, wherein the reflective fence 140 surrounds the first light-emitting element. The element 110, the second light-emitting element 120, and the third light-emitting element 130. As shown in the figure, the reflective fence 140 further covers the top surfaces of the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130.
然後，如第3C圖所示，可採用例如是機械式的磨平、濕式去膠法或兩者的組合，移除反射圍欄140之一部分，如反射圍欄140中覆蓋發光元件的部分，以露出第一發光元件110的頂面110u、第二發光元件120的頂面120u與第三發光元件130的頂面130u。濕式去膠法包含了水刀去膠法(Water Jet
Deflash)或濕式噴砂去膠法(Wet Blasting Deflash)。水刀去膠法的原理是利用噴嘴將液體，例如水，噴出後利用液體的壓力將反射圍欄140移除。濕式噴砂去膠法則在液體中添加特定的粒子，同時以液體的壓力以及粒子碰撞反射圍欄140的表面來移除反射圍欄140。如圖所示，第一發光元件110的頂面110u、第二發光元件120的頂面120u、第三發光元件130的頂面130u與反射圍欄140的頂面140u大致上對齊，如齊平。
Then, as shown in Figure 3C, for example, a mechanical flattening method, a wet stripping method, or a combination of the two can be used to remove a part of the reflective fence 140, such as the part of the reflective fence 140 that covers the light-emitting element, to The top surface 110u of the first light emitting element 110, the top surface 120u of the second light emitting element 120, and the top surface 130u of the third light emitting element 130 are exposed. The wet degumming method includes the water jet degumming method (Water Jet
Deflash) or Wet Blasting Deflash. The principle of the water jet degumming method is to use a nozzle to spray liquid, such as water, and use the pressure of the liquid to remove the reflective fence 140. The wet sandblasting method adds specific particles to the liquid, and at the same time, the pressure of the liquid and the particles collide with the surface of the reflective fence 140 to remove the reflective fence 140. As shown in the figure, the top surface 110u of the first light emitting element 110, the top surface 120u of the second light emitting element 120, and the top surface 130u of the third light emitting element 130 are substantially aligned with the top surface 140u of the reflective fence 140, such as flush.
然後，如第3D1及3D2圖所示，其中第3D1圖繪示顯色層150配置在發光元件上的示意圖，而第3D2圖繪示第3D1圖之結構沿方向3D2-3D2’的剖視圖。
Then, as shown in Figs. 3D1 and 3D2, Fig. 3D1 shows a schematic diagram of the color display layer 150 disposed on the light-emitting element, and Fig. 3D2 shows a cross-sectional view of the structure of Fig. 3D1 along the direction 3D2-3D2'.
在本步驟中，黏貼顯色層150於第一發光元件110、第二發光元件120及第三發光元件130上，其中顯色層150包括至少一第一區域150R1、至少一第二區域150R2及至少一第三區域150R3，其中一個第一區域150R1、一個第二區域150R2及一個第三區域150R3係依序排列，如第3D1圖所示。第一區域150R1為長條形，使第一區域150R1可覆蓋數個第一發光元件110。相似地，第二區域150R2為長條形，使第二區域150R2可覆蓋數個第二發光元件120，且第三區域150R3為長條形，使第三區域150R3可覆蓋數個第三發光元件130。
In this step, the color rendering layer 150 is pasted on the first light emitting element 110, the second light emitting element 120, and the third light emitting element 130. The color rendering layer 150 includes at least one first region 150R1, at least one second region 150R2, and At least one third area 150R3, one of the first area 150R1, one second area 150R2, and one third area 150R3 are arranged in sequence, as shown in FIG. 3D1. The first region 150R1 is elongated, so that the first region 150R1 can cover a plurality of first light-emitting elements 110. Similarly, the second region 150R2 is elongated, so that the second region 150R2 can cover several second light-emitting elements 120, and the third region 150R3 is elongated, so that the third region 150R3 can cover several third light-emitting elements 130.
然後，如第3E圖所示，倒置第3D2圖的整體結構，使第一暫時載板10朝上。然後，將倒置後的整體結構設置在一第二暫時載板20上。例如，以顯色層150黏貼在第二暫時載板20的方式，將整體結構設置在第二暫時載板20上。雖然未繪示，然第二暫時載板20可具有一黏合層，以黏合顯色層150。
Then, as shown in FIG. 3E, the overall structure of FIG. 3D2 is turned upside down so that the first temporary carrier 10 faces upward. Then, the inverted overall structure is set on a second temporary carrier board 20. For example, the entire structure is arranged on the second temporary carrier 20 in a manner that the color layer 150 is pasted on the second temporary carrier 20. Although not shown, the second temporary carrier board 20 may have an adhesive layer to bond the color layer 150.
然後，如第3F圖所示，移除第3E圖的第一暫時載板10，以露出發光元件的電極。
Then, as shown in FIG. 3F, the first temporary carrier 10 in FIG. 3E is removed to expose the electrodes of the light-emitting element.
然後，如第3G1及3 G 2圖所示，其中第3G1圖繪示切割第3F圖之結構的俯視圖，而第3G2圖繪示第3G1圖之結構沿方向3G2-3G2’的剖視圖。
Then, as shown in Figures 3G1 and 3G2, Figure 3G1 shows a top view of the structure of Figure 3F, and Figure 3G2 shows a cross-sectional view of the structure of Figure 3G1 along the direction 3G2-3G2'.
在本步驟中，可採用刀具或雷射，形成至少一切割道C1經過第3F圖之結構，以形成至少一如第1B圖的發光裝置100。由於發光元件的電極朝上露出，因此切割時可依據電極位置進行對位，可提升切割準確性。在切割步驟中，切割道C1未貫穿第二暫時載板20。雖然圖未繪示，然切割道C1可移除部分第二暫時載板20。
In this step, a cutter or a laser can be used to form at least one dicing line C1 passing through the structure of Figure 3F to form at least one light emitting device 100 as shown in Figure 1B. Since the electrode of the light-emitting element is exposed upward, the position can be aligned according to the electrode position during cutting, which can improve the cutting accuracy. In the cutting step, the cutting lane C1 does not penetrate the second temporary carrier board 20. Although not shown in the figure, part of the second temporary carrier board 20 can be removed from the cutting lane C1.
然後，可分離第二暫時載板20與數個發光裝置100。由於切割道C1未貫穿第二暫時載板20，因此切割後數個發光裝置100仍保持在第二暫時載板20上。如此，可提升數個發光裝置100自第二暫時載板20上分離的作業便利性。
Then, the second temporary carrier 20 and the plurality of light emitting devices 100 can be separated. Since the cutting lane C1 does not penetrate the second temporary carrier board 20, the several light-emitting devices 100 remain on the second temporary carrier board 20 after cutting. In this way, the work convenience of separating the several light emitting devices 100 from the second temporary carrier 20 can be improved.
請參照第4A及4B圖，其繪示第2圖之發光裝置200的製程過程圖。發光裝置200的製程類似發光裝置100，不同處在於顯色層250的製程。
Please refer to FIGS. 4A and 4B, which illustrate the manufacturing process diagram of the light-emitting device 200 in FIG. 2. The manufacturing process of the light-emitting device 200 is similar to that of the light-emitting device 100, and the difference lies in the manufacturing process of the color layer 250.
如第4A及4B圖所示，顯色層250透過黏合層160黏貼於第一發光元件110、第二發光元件120及第三發光元件130上。顯色層250包括第一區域150R1、第二區域150R2及第三區域150R3及光吸收區251。光吸收區251圍繞第一區域150R1、第二區域150R2及第三區域150R3。光吸收區251具有數個網格251a，第一區域150R1、第二區域150R2及第三區域150R3的一個區域(如第一區域150R1、第二區域150R2或第三區域150R3)位於對應的一個網格251a內。
As shown in FIGS. 4A and 4B, the color-developing layer 250 is adhered to the first light-emitting element 110, the second light-emitting element 120, and the third light-emitting element 130 through the adhesive layer 160. The color layer 250 includes a first region 150R1, a second region 150R2, a third region 150R3, and a light absorption region 251. The light absorption region 251 surrounds the first region 150R1, the second region 150R2, and the third region 150R3. The light absorbing area 251 has a plurality of grids 251a, and one area of the first area 150R1, the second area 150R2, and the third area 150R3 (such as the first area 150R1, the second area 150R2, or the third area 150R3) is located in a corresponding grid. Grid 251a.
發光裝置200的其它製程步驟類似於或相同於發光裝置100的對應步驟，於此不再贅述。
The other process steps of the light-emitting device 200 are similar to or the same as the corresponding steps of the light-emitting device 100, and will not be repeated here.
請參照第5A，5B及5C圖，第5A圖繪示依照本發明一實施例之發光裝置500的俯視圖，第5B圖繪示第5A圖之發光裝置500沿方向A-A’的剖視圖，而第5C圖繪示第5A圖之發光裝置500沿方向B-B’的剖視圖。
Please refer to FIGS. 5A, 5B, and 5C. FIG. 5A is a top view of a light emitting device 500 according to an embodiment of the present invention, and FIG. 5B is a cross-sectional view of the light emitting device 500 of FIG. 5A along the direction AA', and FIG. 5C is a cross-sectional view of the light emitting device 500 of FIG. 5A along the direction BB'.
發光裝置500包括第一發光元件520a、第二發光元件520b、第三發光元件520c、第四發光元件520d、第一波長轉換層540a、第二波長轉換層540b及反射圍欄560。
The light emitting device 500 includes a first light emitting element 520a, a second light emitting element 520b, a third light emitting element 520c, a fourth light emitting element 520d, a first wavelength conversion layer 540a, a second wavelength conversion layer 540b, and a reflective fence 560.
如第5A圖所示，在一實施例中，第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d可發出相同波長或顏色的光線。在另一實施例中，第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d可發出相異波長或顏色的光線。關於發光元件之波長及結構的描述可參閱[0021]至[0023]段落。在一實施例中，第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d的排列可以是矩陣方式排列，例如：2X2的矩陣。在一實施例中，第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d彼此具有大致相同的面積。在其他實施例中，第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d的面積也可不同。在一實施例中，第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d之間彼此分離。在一實施例中，第一發光元件520a與第二發光元件520b間具有一間距(第一間距)，第三發光元件520c與第四發光元件520d之間具有一間距(第二間距)，且第一間距與第二間距大致相等。相似地，第一發光元件520a
與第三發光元件520c間具有一間距(第三間距)，第二發光元件520b與第四發光元件520d之間具有一間距(第四間距)，且第三間距與第四間距大致相等。
As shown in FIG. 5A, in one embodiment, the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d can emit light of the same wavelength or color. In another embodiment, the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d can emit light of different wavelengths or colors. For the description of the wavelength and structure of the light-emitting element, please refer to paragraphs [0021] to [0023]. In an embodiment, the arrangement of the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d may be a matrix arrangement, for example, a 2×2 matrix. In an embodiment, the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d have substantially the same area as each other. In other embodiments, the areas of the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d may also be different. In an embodiment, the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d are separated from each other. In one embodiment, there is a pitch (first pitch) between the first light emitting element 520a and the second light emitting element 520b, and there is a pitch (second pitch) between the third light emitting element 520c and the fourth light emitting element 520d, and The first distance and the second distance are approximately equal. Similarly, the first light emitting element 520a
There is a distance (third distance) from the third light emitting element 520c, and a distance (fourth distance) between the second light emitting element 520b and the fourth light emitting element 520d, and the third distance and the fourth distance are substantially equal.
如第5A圖所示，在一實施例中，第一波長轉換層540a覆蓋第一發光元件520a及第二發光元件520b，且第二波長轉換層540b覆蓋第三發光元件520c及第四發光元件520d。詳言之，第一波長轉換層540a在第一發光元件520a的上方往第二發光元件520b的方向延伸，並穿過第一間距至第二發光元件520b上方。相似地，第二波長轉換層540b在第三發光元件520c的上方往第四發光元件520d的方向延伸，並穿過第二間距至第四發光元件520d上方。換言之，第一波長轉換層540a的面積大於第一發光元件520a及第二發光元件520b兩者的面積之和，且第二波長轉換層540b的面積大於第三發光元件520c及第四發光元件520d兩者的面積之和。在另一實施例中，第一波長轉換層540a與第二波長轉換層540b以相互交錯方式排列(圖未示)，因此第一波長轉換層540a覆蓋第一發光元件520a及第四發光元件520d，且第二波長轉換層540b覆蓋第二發光元件520b及第三發光元件520c。
As shown in FIG. 5A, in an embodiment, the first wavelength conversion layer 540a covers the first light-emitting element 520a and the second light-emitting element 520b, and the second wavelength conversion layer 540b covers the third light-emitting element 520c and the fourth light-emitting element 520d. In detail, the first wavelength conversion layer 540a extends above the first light emitting element 520a in the direction of the second light emitting element 520b, and passes through the first pitch to above the second light emitting element 520b. Similarly, the second wavelength conversion layer 540b extends above the third light emitting element 520c in the direction of the fourth light emitting element 520d, and passes through the second interval to above the fourth light emitting element 520d. In other words, the area of the first wavelength conversion layer 540a is greater than the sum of the areas of the first light-emitting element 520a and the second light-emitting element 520b, and the area of the second wavelength conversion layer 540b is greater than that of the third light-emitting element 520c and the fourth light-emitting element 520d The sum of the area of the two. In another embodiment, the first wavelength conversion layer 540a and the second wavelength conversion layer 540b are arranged in a staggered manner (not shown), so the first wavelength conversion layer 540a covers the first light-emitting element 520a and the fourth light-emitting element 520d And the second wavelength conversion layer 540b covers the second light-emitting element 520b and the third light-emitting element 520c.
在一實施例中，第一發光元件520a及第二發光元件520b發出第一波長的光並透過第一波長轉換層540a轉換成第二波長的光，且第一波長與第二波長混光後形成第一混光。相似地，第三發光元件520c及第四發光元件520d發出第三波長的光並透過第二波長轉換層540b轉換成第四波長的光，且第三波長與第四波長混光後形成第二混光。第一混光與第二混光的相對色溫(Correlated Color Temperature,CCT)或CIE色點座標不同。第一波長轉換層540a與第二波長轉換層540b的波長轉換材料的密度及/或種類不同可作為達成第一混光與第二混光的相對色溫不同的技術方案。在一實施例中，第一波長轉換層540a包含
接著劑542a以及波長轉換材料544a(亦稱第一波長轉換材料)，且第二波長轉換層540b包含接著劑542b以及波長轉換材料544b(亦稱第二波長轉換材料)。在一實施例中，第一混光的色溫小於第二混光的色溫，因此，第一波長轉換材料544a的密度大於第二波長轉換材料544b的密度。在一實施例中，第一混光與第二混光的相對色溫相差至少2000K。此外，發光裝置500在驅動射出一光線時，此光線的色溫是可變化的，可在第一混光與第二混光兩者相對色溫之間的範圍做調整。在一實施例中，發光裝置500射出之光線的色溫可操作在相對色溫2000K至6000K之間。在另一實施例中，發光裝置500射出之光線的色溫可操作在相對色溫2000K至8000K之間。
In one embodiment, the first light-emitting element 520a and the second light-emitting element 520b emit light of the first wavelength and pass through the first wavelength conversion layer 540a to be converted into light of the second wavelength, and the first wavelength and the second wavelength are mixed. Form the first mixed light. Similarly, the third light-emitting element 520c and the fourth light-emitting element 520d emit light of the third wavelength and pass through the second wavelength conversion layer 540b to be converted into light of the fourth wavelength, and the third wavelength and the fourth wavelength are mixed to form a second wavelength. Mixed light. Correlated Color Temperature (CCT) or CIE color point coordinates of the first mixed light and the second mixed light are different. The difference in the density and/or type of the wavelength conversion materials of the first wavelength conversion layer 540a and the second wavelength conversion layer 540b can be used as a technical solution for achieving different relative color temperatures of the first light mixing and the second light mixing. In an embodiment, the first wavelength conversion layer 540a includes
The adhesive 542a and the wavelength conversion material 544a (also referred to as the first wavelength conversion material), and the second wavelength conversion layer 540b includes the adhesive 542b and the wavelength conversion material 544b (also referred to as the second wavelength conversion material). In an embodiment, the color temperature of the first mixed light is lower than the color temperature of the second mixed light. Therefore, the density of the first wavelength conversion material 544a is greater than the density of the second wavelength conversion material 544b. In an embodiment, the relative color temperature difference between the first mixed light and the second mixed light is at least 2000K. In addition, when the light-emitting device 500 is driven to emit a light, the color temperature of the light is variable, and can be adjusted within the range between the relative color temperatures of the first mixed light and the second mixed light. In one embodiment, the color temperature of the light emitted by the light-emitting device 500 can be operated at a relative color temperature between 2000K and 6000K. In another embodiment, the color temperature of the light emitted by the light emitting device 500 can be operated at a relative color temperature between 2000K and 8000K.
如第5A圖所示，在一實施例中，反射圍欄560圍繞第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d。此外，反射圍欄560圍繞第一波長轉換層540a以及第二波長轉換層540b。反射圍欄560包含一頂表面561、一底表面563以及位於頂表面561及底表面563之間的一側表面565。反射圍欄560可反射發光元件以及波長轉換層所發出的光，並減小發光角度。在一實施例中，反射圍欄560對波長450nm以及560nm的光線的反射率皆大於50%以上。關於反射圍欄560之材料的描述可參閱[0028]段落。
As shown in FIG. 5A, in one embodiment, the reflective fence 560 surrounds the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d. In addition, the reflective fence 560 surrounds the first wavelength conversion layer 540a and the second wavelength conversion layer 540b. The reflective fence 560 includes a top surface 561, a bottom surface 563, and a side surface 565 located between the top surface 561 and the bottom surface 563. The reflective fence 560 can reflect the light emitted by the light-emitting element and the wavelength conversion layer, and reduce the light-emitting angle. In one embodiment, the reflectivity of the reflective fence 560 to light with wavelengths of 450 nm and 560 nm is greater than 50%. For a description of the material of the reflective fence 560, please refer to paragraph [0028].
如第5B圖所示，在一實施例中，第一波長轉換層540a的寬度W2大於第一發光元件520a的寬度W1。相似地，第二波長轉換層540b的寬度大於第三發光元件520c的寬度。在另一實施例中，第一波長轉換層540a的寬度W2大致等於第一發光元件520a的寬度W1。在一實施例中，如第5B圖所示，反射圍欄560具有上部份562以及下部份564。上部份562可分隔第一波長轉換層540a以及第二波長轉換層540b，且上部份562具有厚度T5。下部份564可分
隔第一發光元件520a以及第三發光元件520c，且下部份564具有厚度T6。在一實施例中，上部份562的厚度T5小於下部份564的厚度T6。在一實施例中，上部份562的厚度T5不大於100微米，且下部份564的厚度T6不大於325微米。若下部分564厚度大於325微米，將無法有效地減小發光裝置500整體的尺寸。在另一實施例中，上部份562的厚度T5在25微米至100微米之間。若上部分562的厚度T5小於25微米，可能無法有效地阻擋第一發光元件520a及/或第三發光元件520c的光線的穿透至隔壁的發光元件或波長轉換層，如此將會造成干擾。在另一實施例中，下部份564的厚度T6在200微米至325微米之間。在一實施例中，第一波長轉換層540a具有一上表面541a，第二波長轉換層540b具有一上表面541b。第一波長轉換層540a的上表面541a與第二波長轉換層540b的上表面541b以及反射圍欄560的頂表面561大致共平面。接著參閱第5C圖，第一波長轉換層540a從第一發光元件520a往第二發光元件520b的方向延伸並不存在上部份562。下部份564可分隔第一發光元件520a以及第二發光元件520b。
As shown in FIG. 5B, in one embodiment, the width W2 of the first wavelength conversion layer 540a is greater than the width W1 of the first light-emitting element 520a. Similarly, the width of the second wavelength conversion layer 540b is greater than the width of the third light-emitting element 520c. In another embodiment, the width W2 of the first wavelength conversion layer 540a is substantially equal to the width W1 of the first light-emitting element 520a. In one embodiment, as shown in FIG. 5B, the reflective fence 560 has an upper portion 562 and a lower portion 564. The upper portion 562 can separate the first wavelength conversion layer 540a and the second wavelength conversion layer 540b, and the upper portion 562 has a thickness T5. The lower part 564 can be divided
The first light-emitting element 520a and the third light-emitting element 520c are separated, and the lower portion 564 has a thickness T6. In one embodiment, the thickness T5 of the upper portion 562 is smaller than the thickness T6 of the lower portion 564. In one embodiment, the thickness T5 of the upper portion 562 is not greater than 100 μm, and the thickness T6 of the lower portion 564 is not greater than 325 μm. If the thickness of the lower portion 564 is greater than 325 microns, the overall size of the light emitting device 500 cannot be effectively reduced. In another embodiment, the thickness T5 of the upper portion 562 is between 25 microns and 100 microns. If the thickness T5 of the upper portion 562 is less than 25 microns, it may not be able to effectively block the light of the first light-emitting element 520a and/or the third light-emitting element 520c from penetrating to the light-emitting element or the wavelength conversion layer of the partition wall, which will cause interference. In another embodiment, the thickness T6 of the lower portion 564 is between 200 μm and 325 μm. In one embodiment, the first wavelength conversion layer 540a has an upper surface 541a, and the second wavelength conversion layer 540b has an upper surface 541b. The upper surface 541a of the first wavelength conversion layer 540a is substantially coplanar with the upper surface 541b of the second wavelength conversion layer 540b and the top surface 561 of the reflective fence 560. Next, referring to FIG. 5C, the first wavelength conversion layer 540a extends from the first light-emitting element 520a to the second light-emitting element 520b, and there is no upper portion 562. The lower portion 564 can separate the first light-emitting element 520a and the second light-emitting element 520b.
如第5D圖所示，在一實施例中，第一發光元件520a的底部具有兩個電極526a(亦稱第一電極)，第二發光元件520b的底部具有兩個電極526b(亦稱第二電極)，第三發光元件520c的底部具有兩個電極526c(亦稱第三電極)，以及第四發光元件520d的底部具有兩個電極526d(亦稱第四電極)。第一發光元件520a的底部，第二發光元件520b的底部，第三發光元件520c的底部，以及第四發光元件520d的底部皆從反射圍欄560暴露出。
As shown in Figure 5D, in one embodiment, the bottom of the first light-emitting element 520a has two electrodes 526a (also called the first electrode), and the bottom of the second light-emitting element 520b has two electrodes 526b (also called the second Electrodes), the bottom of the third light-emitting element 520c has two electrodes 526c (also referred to as the third electrode), and the bottom of the fourth light-emitting element 520d has two electrodes 526d (also referred to as the fourth electrode). The bottom of the first light emitting element 520a, the bottom of the second light emitting element 520b, the bottom of the third light emitting element 520c, and the bottom of the fourth light emitting element 520d are all exposed from the reflective fence 560.
發光裝置500中，透過反射圍欄560連結第一發光元件520a以及第三發光元件520c，並連結第一波長轉換層540a以及第二波長轉換層540b。如
此的設計可減少另一個反射圍欄的厚度以及反射圍欄彼此之間的間距，發光裝置500的尺寸可被縮小，如此對於電子產品小型化的設計有很大的幫助。
In the light emitting device 500, the first light emitting element 520a and the third light emitting element 520c are connected through the reflective fence 560, and the first wavelength conversion layer 540a and the second wavelength conversion layer 540b are connected. like
This design can reduce the thickness of another reflective fence and the distance between the reflective fences, and the size of the light-emitting device 500 can be reduced, which greatly helps the miniaturization of electronic products.
第6A~第6I圖係顯示第5A圖之發光裝置500的製造過程圖。參照第6A圖，在一實施例中，提供一暫時性基板612、一黏膠層614形成在暫時性基板612之上、以及發光元件520a、520c位於黏膠層614上，其中，發光元件的數量在此僅為例示，於本實施例中需為4個或其倍數。在一實施例中，暫時性基板612為玻璃、藍寶石基板、金屬或塑膠材料，可做為支撐之用。黏膠層614可作為發光元件520a、520c暫時的固定之用。在一實施例中，黏膠層614為一熱固化膠(thermal curing adhesive)，於此步驟，黏膠層614尚未被完全固化而仍具有黏性。在另一實施例中，黏膠層614可為光固化膠(photo curing adhesive)。
FIGS. 6A to 6I are diagrams showing the manufacturing process of the light-emitting device 500 in FIG. 5A. Referring to FIG. 6A, in one embodiment, a temporary substrate 612, an adhesive layer 614 are formed on the temporary substrate 612, and the light-emitting elements 520a and 520c are located on the adhesive layer 614, wherein the light-emitting element The number here is only an example, and it needs to be 4 or a multiple thereof in this embodiment. In one embodiment, the temporary substrate 612 is glass, sapphire substrate, metal or plastic material, which can be used as a support. The adhesive layer 614 can be used for temporarily fixing the light-emitting elements 520a and 520c. In one embodiment, the adhesive layer 614 is a thermal curing adhesive. In this step, the adhesive layer 614 has not been completely cured but still has adhesiveness. In another embodiment, the adhesive layer 614 may be a photo curing adhesive.
參照第6B圖，在一實施例中，於暫時性基板612上設置反射圍欄下部660a。反射圍欄下部660a的高度大致與發光元件520a、520c的厚度相同。在一實施例中，先覆蓋一反射圍欄材料(亦稱第一反射圍欄材料)於多個發光元件520a、520c，再移除部分的反射圍欄材料662以形成反射圍欄下部660a。移除部分的反射圍欄材料662可以透過機械式的磨平、濕式去膠法或兩者的組合。濕式去膠法包含了水刀去膠法(Water Jet Deflash)或濕式噴砂去膠法(Wet Blasting Deflash)。水刀去膠法的原理是利用噴嘴將液體，例如水，噴出後利用液體的壓力將部分的反射圍欄材料662移除。濕式噴砂去膠法則在液體中添加特定的粒子，同時以液體的壓力以及粒子碰撞絕緣層材料的表面來移除部分的反射圍欄材料662。
Referring to FIG. 6B, in one embodiment, a lower reflective fence 660a is provided on the temporary substrate 612. The height of the lower portion 660a of the reflective fence is approximately the same as the thickness of the light-emitting elements 520a and 520c. In one embodiment, a reflective fence material (also referred to as a first reflective fence material) is first covered on the plurality of light-emitting elements 520a, 520c, and then a part of the reflective fence material 662 is removed to form the lower reflective fence 660a. The removed part of the reflective fence material 662 can be mechanically flattened, wet stripped, or a combination of the two. Wet debinding methods include Water Jet Deflash or Wet Blasting Deflash. The principle of the water jet degumming method is to use a nozzle to spray liquid, such as water, and use the pressure of the liquid to remove part of the reflective fence material 662. The wet sandblasting method adds specific particles to the liquid, and at the same time, the pressure of the liquid and the particles collide with the surface of the insulating layer material to remove part of the reflective fence material 662.
參照第6C圖，在一實施例中，第一波長轉換層材料640a’覆蓋反射圍欄下部660a。在一實施例中，透過移除部分的第一波長轉換層材料642a’以形成第一波長轉換層材料640a’所欲形成的厚度。參照第6D圖，在一實施例中，第一波長轉換層材料640a’被部分地移除並露出發光元件520c以及部份的反射圍欄下部660a。此外，第一波長轉換層材料640a’被部分地移除後形成第一波長轉換層材料640a”。在一實施例中，第一波長轉換層材料640a’被部分地移除的方式可以是用刀具切除。
Referring to FIG. 6C, in one embodiment, the first wavelength conversion layer material 640a' covers the lower portion 660a of the reflective fence. In one embodiment, a portion of the first wavelength conversion layer material 642a' is removed to form the desired thickness of the first wavelength conversion layer material 640a'. Referring to FIG. 6D, in one embodiment, the first wavelength conversion layer material 640a' is partially removed to expose the light-emitting element 520c and part of the lower part of the reflective fence 660a. In addition, the first wavelength conversion layer material 640a' is partially removed to form the first wavelength conversion layer material 640a". In one embodiment, the first wavelength conversion layer material 640a' may be partially removed by Tool removal.
參照第6E圖，在一實施例中，第二波長轉換層材料640b’覆蓋反射圍欄下部660a、發光元件520c以及第一波長轉換層材料640a”。參照第6F圖，在一實施例中，第二波長轉換層材料640b”被部分地移除並露出第一波長轉換層材料640a”。第二波長轉換層材料640b”被移除的方式可與移除反射圍欄材料的方式相同或相似。
Referring to Figure 6E, in one embodiment, the second wavelength conversion layer material 640b' covers the lower portion of the reflective fence 660a, the light emitting element 520c, and the first wavelength conversion layer material 640a". Referring to Figure 6F, in one embodiment, The second wavelength conversion layer material 640b" is partially removed and the first wavelength conversion layer material 640a" is exposed. The second wavelength conversion layer material 640b" can be removed in the same or similar manner as the reflective fence material.
參照第6G圖，在一實施例中，第一波長轉換層材料640a”被部分地移除以形成第一波長轉換層640a。此外，第二波長轉換層材料640b”被部分地移除以形成第二波長轉換層640b。在一實施例中，移除第一波長轉換層材料640a”以及第二波長轉換層材料640b”的方式可以透過刀具切割。
Referring to Figure 6G, in an embodiment, the first wavelength conversion layer material 640a" is partially removed to form the first wavelength conversion layer 640a. In addition, the second wavelength conversion layer material 640b" is partially removed to form The second wavelength conversion layer 640b. In an embodiment, the method of removing the first wavelength conversion layer material 640a" and the second wavelength conversion layer material 640b" can be cut through a cutter.
參照第6H圖，在一實施例中，於反射圍欄下部660a上設置反射圍欄上部660b並形成反射覆蓋物660’。在一實施例中，反射圍欄上部660b的形成方式是先形成一反射圍欄材料(亦稱第二反射圍欄材料)於反射圍欄下部660a後，再透過移除部分的反射圍欄材料並露出第一波長轉換層640a以及第二波長轉換層640b。第二反射圍欄材料被移除的方式可與移除第一反射圍欄材料的方式相同或相似。
Referring to Figure 6H, in one embodiment, an upper reflective fence 660b is provided on the lower reflective fence 660a to form a reflective cover 660'. In one embodiment, the upper part of the reflective fence 660b is formed by first forming a reflective fence material (also known as a second reflective fence material) on the lower part of the reflective fence 660a, and then removing part of the reflective fence material and exposing the first wavelength The conversion layer 640a and the second wavelength conversion layer 640b. The manner in which the second reflective fence material is removed may be the same or similar to the manner in which the first reflective fence material is removed.
參照第6I圖，在一實施例中，反射覆蓋物660’被部分地移除(反射圍欄的移除部分662)以形成反射圍欄660並形成發光裝置。在一實施例中，移除反射覆蓋物660’的方式可以透過刀具切割。
Referring to FIG. 61, in an embodiment, the reflective cover 660' is partially removed (removed portion 662 of the reflective fence) to form the reflective fence 660 and form a light emitting device. In an embodiment, the way to remove the reflective cover 660' can be cut through a knife.
請參照第7A及7B圖，第7A圖繪示依照本發明一實施例之發光模組700的俯視圖，且第7B圖繪示第7A圖之發光模組700沿方向C-C’的剖視圖。
Please refer to FIGS. 7A and 7B. FIG. 7A is a top view of the light emitting module 700 according to an embodiment of the present invention, and FIG. 7B is a cross-sectional view of the light emitting module 700 of FIG. 7A along the direction C-C'.
發光模組700包含發光裝置500以及一光學元件720、一承載板740。發光裝置500形成在承載板740上，此外，光學元件720覆蓋發光裝置500。參照第7B圖，在一實施例中，光學元件720具有左半部及右半部，左半部對應第一發光元件520a以及第一波長轉換層640a，且右半部對應第三發光元件520c以及第二波長轉換層640b。此外，承載板740為一電路板，具有一絕緣層742以及一電路層744。電路層744與發光裝置500電性連接。在一實施例中，光學元件720為一菲涅耳透鏡(Fresnel lens)，具有多個區域各自對應發光元件。參照第7A圖，菲涅耳透鏡中具有四組的同心圓紋路各自面對發光裝置500中的第一發光元件520a、第二發光元件520b、第三發光元件520c以及第四發光元件520d。如此，發光裝置500透過菲涅耳透鏡可以近似或等同平行光方式發光。
The light-emitting module 700 includes a light-emitting device 500, an optical element 720, and a carrier board 740. The light emitting device 500 is formed on the carrier board 740, and in addition, the optical element 720 covers the light emitting device 500. Referring to FIG. 7B, in an embodiment, the optical element 720 has a left half and a right half, the left half corresponds to the first light emitting element 520a and the first wavelength conversion layer 640a, and the right half corresponds to the third light emitting element 520c And the second wavelength conversion layer 640b. In addition, the carrier board 740 is a circuit board with an insulating layer 742 and a circuit layer 744. The circuit layer 744 is electrically connected to the light emitting device 500. In one embodiment, the optical element 720 is a Fresnel lens, and has a plurality of regions corresponding to the light-emitting element. Referring to FIG. 7A, the Fresnel lens has four groups of concentric patterns facing each of the first light-emitting element 520a, the second light-emitting element 520b, the third light-emitting element 520c, and the fourth light-emitting element 520d in the light-emitting device 500. In this way, the light emitting device 500 can emit light in a manner similar to or equivalent to parallel light through the Fresnel lens.
發光模組700可應用於電子產品中的閃光燈上，透過不同色溫的光源設計，在不同環境可提供更細緻的白平衡處理，因此可更貼近真實的影像。
The light-emitting module 700 can be applied to a flashlight in an electronic product. Through the design of light sources with different color temperatures, it can provide more detailed white balance processing in different environments, so that it can be closer to the real image.
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。
The above-mentioned embodiments are only to illustrate the technical ideas and features of the present invention, and their purpose is to enable those who are familiar with the art to understand the content of the present invention and implement them accordingly. When they cannot be used to limit the patent scope of the present invention, That is, all equal changes or modifications made in accordance with the spirit of the present invention should still be covered by the patent scope of the present invention.
