WO2013183751A1 - Fluorescent substrate, light-emitting device, display device, and lighting device - Google Patents

Fluorescent substrate, light-emitting device, display device, and lighting device Download PDF

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Publication number
WO2013183751A1
WO2013183751A1 PCT/JP2013/065789 JP2013065789W WO2013183751A1 WO 2013183751 A1 WO2013183751 A1 WO 2013183751A1 JP 2013065789 W JP2013065789 W JP 2013065789W WO 2013183751 A1 WO2013183751 A1 WO 2013183751A1
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light
layer
phosphor
phosphor layer
substrate
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PCT/JP2013/065789
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French (fr)
Japanese (ja)
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別所 久徳
充浩 向殿
悦昌 藤田
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シャープ株式会社
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133617Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/877Arrangements for extracting light from the devices comprising scattering means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091Scattering means in or on the semiconductor body or semiconductor body package
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the present invention relates to a phosphor substrate, a light emitting device, a display device, and a lighting device that include a phosphor layer that emits fluorescence by excitation light.
  • the need for flat panel displays has increased with the advancement of information technology in society.
  • the flat panel display include a non-self-luminous liquid crystal display (LCD), a self-luminous plasma display (PDP), an inorganic electroluminescence (inorganic EL) display, and organic electroluminescence (hereinafter, “organic EL”). Or a display or the like.
  • an illumination device is generally provided as a light source on the back surface of a transmissive liquid crystal display element, and visibility is improved by irradiating the liquid crystal element from the back surface.
  • the light emitted from the light source is generally non-polarized light, and more than 50% is absorbed by the polarizing plate disposed on the illumination light incident side of the liquid crystal display element.
  • a color liquid crystal display device that uses a white light source as a light source and arranges a micro color filter corresponding to the three primary colors or the four primary colors in the display surface and performs color display by additive color mixing, light exceeding 70% is emitted by the color filter. Since it is absorbed, the utilization efficiency of the light source light is very low, and increasing the efficiency of the light utilization efficiency has become a major issue.
  • a liquid crystal display element having a voltage applying means for applying a voltage corresponding to an image signal to a matrix pixel formed by a transparent electrode, an illumination device emitting light from a blue region to a blue-green region, and a blue region to a blue-green region Wavelength-converting phosphor that emits red light using the light from the light source, wavelength-converting phosphor that emits green light using the light from the blue region to the blue-green region, and light other than the blue region to the blue-green region
  • a color display device including a color filter for cutting (see, for example, Patent Documents 1 and 2).
  • a blue light source that emits blue light
  • a liquid crystal element having a liquid crystal cell and a pair of deflecting plates sandwiching the liquid crystal cell, and excited by the blue light
  • a liquid crystal display comprising: a phosphor that emits red fluorescence; a color filter having a phosphor that emits green fluorescence when excited by the blue light; and a light scattering film that scatters at least the blue light.
  • An apparatus is known (see, for example, Patent Document 3).
  • the light traveling direction is set between the light emitting layer and the outside so that the front luminance value and the luminance value in the direction of the viewing angle of 50 ° to 70 ° satisfy the luminance value of the front luminance value ⁇ 50 ° to 70 °.
  • an organic EL element in which a layer that is disturbed by reflection and refraction is provided and light in a wide-angle region with a large proportion of the amount of light is extracted from the relationship of the solid angle to improve the light extraction efficiency (for example, (See Patent Document 4).
  • the phosphor layer is isotropic, that is, has the property of emitting light with equal energy in any direction, when considering the viewing angle characteristics of the brightness defined by the brightness level of the display, Due to the solid angle, it has a profile in which the luminance increases as the viewing angle increases when the viewing angle (angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is from 0 ° to around 80 °. There are many.
  • the direction of visually recognizing the display is mostly in the vicinity of 0 °, and even in a television, the viewing direction is up to about 60 ° (for example, see Reference 1). Therefore, in order to use light effectively, a means for optimizing the emission profile of the phosphor is necessary.
  • the liquid crystal display device described in Patent Document 3 has a light scattering film that scatters blue light to at least a blue pixel, so that the viewing angle of light emitted from the blue pixel can be increased, but the light scattering film Since only the function to scatter blue light is provided, the emission profiles of red and green pixels cannot be combined. That is, since there is no way to match the light emission profiles between the pixels, there is a problem that the color changes when the display image is viewed obliquely, and the viewing angle color display characteristics deteriorate.
  • the present invention has been made in view of the above circumstances, and adjusts the emission profile of fluorescence emitted from a phosphor layer to an optimum light distribution profile by combining the phosphor layer and the light distribution adjustment layer. And having a plurality of phosphor layers having different emission profiles, combining at least one light distribution adjusting layer suitable for each phosphor layer with the phosphor layer can produce different fluorescence layers.
  • An object of the present invention is to provide a phosphor substrate, a light emitting device, a display device, and an illuminating device that can be combined with a light emission profile from a body layer and have a good viewing angle color display characteristic that does not change in color depending on the viewing angle. And
  • the phosphor substrate of the present invention includes a substrate on which a phosphor layer that is excited by excitation light and emits fluorescence is formed on one surface, and a light distribution adjustment layer that changes at least the emission direction of fluorescence emitted from the phosphor layer. Is formed.
  • the light distribution adjusting layer is made of a light scattering material including a light-transmitting resin in which at least one particle is mixed.
  • a light emitting device includes the phosphor substrate described in each of the above items and an excitation light source that emits the excitation light.
  • the light distribution adjustment layer is disposed between the substrate and the phosphor layer.
  • the light distribution adjusting layer has a luminance value L1 in a direction of a viewing angle of 0 ° that is a normal direction perpendicular to the emitting surface and a viewing angle of 0 ° from the emitting surface facing the incident surface of the excitation light on the substrate.
  • the fluorescence is emitted so that the relationship with the luminance value L2 of a larger viewing angle satisfies at least L1 ⁇ L2.
  • the light distribution adjusting layer emits fluorescence so that a relationship between the luminance value L1 and the luminance value L3 in the direction of the viewing angle of 60 ° satisfies at least L3 / L1 ⁇ 0.8.
  • a light-reflective barrier is formed on at least one side surface along the thickness direction of the phosphor layer.
  • the excitation light incident surface side of the phosphor layer transmits at least excitation light in a peak wavelength region of the excitation light wavelength range and has a wavelength range of the fluorescence emitted from the phosphor layer.
  • a wavelength selection layer that reflects at least fluorescence in a peak wavelength region is formed.
  • a low refractive index layer having a refractive index smaller than that of the phosphor layer is disposed between the phosphor layer and the wavelength selection layer. Further, the low refractive index layer is further disposed between the light distribution adjusting layer and the phosphor layer. Further, the refractive index of the low refractive index layer is in the range of 1 to 1.5.
  • the low refractive index layer is composed of a gas.
  • a plurality of the phosphor layers are arranged side by side on one surface of the substrate.
  • a plurality of the light distribution adjustment layers are arranged side by side so as to correspond to each of the plurality of phosphor layers.
  • a light absorption layer is further disposed between the phosphor layers adjacent to each other.
  • the light absorption layer may be further disposed between the light distribution adjustment layers adjacent to each other.
  • the light absorption layer may be formed on at least one of an upper surface or a lower surface extending perpendicular to the thickness direction of the barrier.
  • At least a portion of the barrier that is in contact with the phosphor layer has light scattering properties.
  • at least a portion of the barrier that is in contact with the phosphor layer has an uneven shape.
  • the light distribution adjusting layer is characterized by spreading along an exit surface facing the incident surface of the excitation light on the substrate.
  • a display device includes the light-emitting device described in each of the above items.
  • the excitation light source emits excitation light in the ultraviolet wavelength region
  • the phosphor layer comprises a red phosphor layer that constitutes a red pixel that emits red light by excitation light in the ultraviolet wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by excitation light in the ultraviolet wavelength region And a blue phosphor layer that constitutes a blue pixel that emits blue light by excitation light in the ultraviolet wavelength region.
  • the excitation light source emits excitation light in a blue wavelength region
  • the phosphor layer includes a red phosphor layer that constitutes a red pixel that emits red light by the excitation light in the blue wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by the excitation light in the blue wavelength region. And a blue scatterer layer constituting a blue pixel that scatters the excitation light in the blue wavelength region. Further, the blue scatterer layer and the light distribution adjustment layer are integrally formed.
  • the excitation light source emits excitation light in a blue wavelength region
  • the phosphor layer includes a red phosphor layer that constitutes a red pixel that emits red light by the excitation light in the blue wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by the excitation light in the blue wavelength region. And a blue phosphor layer that constitutes a blue pixel that emits blue light by the excitation light in the blue wavelength region.
  • An active matrix driving element corresponding to the excitation light source is arranged. Further, the excitation light source is composed of any one of a light emitting diode, an organic electroluminescence element, and an inorganic electroluminescence element.
  • the excitation light source is a planar light source, and a liquid crystal element capable of controlling the transmittance of the excitation light is formed between the excitation light source and the substrate.
  • the excitation light emitted from the excitation light source has directivity.
  • a polarizing plate having an extinction ratio of 10,000 or more at a wavelength of 435 nm or more and 480 nm or less is provided between the excitation light source and the substrate. Further, a color filter is provided between at least one of the phosphor layer and the light distribution adjustment layer, or between the light distribution adjustment layer and the substrate.
  • the color change ⁇ u′v ′ of the omnidirectional chromaticity u ′, v ′ with respect to the value of the chromaticity u ′, v ′ in the front direction of the light emitted from the light emitting surface is 0.01 or less. It is characterized by.
  • the light distribution adjusting layer or an external light antireflection layer for preventing reflection of external light may be provided so as to overlap the substrate. Further, the refractive index of the external light antireflection layer has a refractive index gradient that gradually increases or decreases along the thickness direction.
  • a lighting device includes the light-emitting device described in each of the above items.
  • the present invention it is possible to adjust the light emission profile of the fluorescence emitted from the phosphor layer to an optimum light distribution profile, and to further match the light distribution profiles of the phosphor layers having different light emission profiles. Therefore, it is possible to provide a phosphor substrate, a light emitting device, a display device, and a lighting device having good viewing angle color display characteristics that do not change in color depending on the viewing angle.
  • 1 is a schematic plan view showing an organic EL display constituting a display device according to the present invention. It is a schematic sectional drawing of the display apparatus which concerns on this invention. It is a schematic sectional drawing of the display apparatus which concerns on this invention. It is an external view showing a mobile phone as an application example of a display device according to the present invention. It is an external view which shows the thin television which is one application example of the display apparatus which concerns on this invention.
  • FIG. 1 is a schematic cross-sectional view showing a first example of a conventional light emitting device.
  • a conventional light-emitting device 10 is generally configured by an excitation light source 11 that emits excitation light, and a substrate 13 that is arranged opposite to the excitation light source and on which a phosphor layer 12 that is excited by the excitation light and emits fluorescence is formed. ing.
  • the phosphor layer is isotropic, that is, has a characteristic of emitting light with equal energy in any direction.
  • the viewing angle characteristic of the brightness defined by the brightness level of the display, the light emitted from the phosphor layer and extracted outside through the substrate, as shown in FIG.
  • the viewing angle angle formed by the viewing direction and the surface perpendicular to the light emitting surface
  • the profile often has a higher luminance as the viewing angle increases.
  • the direction of visually recognizing the display is mostly in the vicinity of 0 °, and the viewing direction is about 60 ° even on a television. Therefore, there is a problem that light cannot be used effectively.
  • FIG. 2 is a schematic cross-sectional view showing a second example of a conventional light emitting device.
  • a conventional light emitting device 20 includes an excitation light source 11 that emits excitation light, a first phosphor layer 21 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer. 22, a third phosphor layer 23, and a substrate 13 in which a light absorption layer 24 is formed between the phosphor layers adjacent to each other.
  • the light distribution profile of the light emitted from the phosphor layer and extracted outside through the substrate is as follows. May vary by layer. In such a case, there is a problem that the tint changes between when the display image is viewed from the front and when viewed from an oblique direction, and the viewing angle color display characteristics are degraded.
  • the term viewing angle indicates that the phosphor Fm is formed as shown in FIG. )
  • a direction along the light emission surface FPa of the phosphor substrate FP made of the substrate P is defined as a viewing angle of 90 °
  • a direction perpendicular to the emission surface is defined as a viewing angle of 0 °.
  • the viewing angle is 45 °
  • the angle is inclined at 45 ° between the direction (90 °) along the emission surface of the phosphor substrate and the direction (0 °) perpendicular to the emission surface.
  • FIG. 3 is a schematic cross-sectional view showing a light emitting device according to the first embodiment.
  • the light emitting device 30 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed to face the excitation light source, and is formed with a phosphor layer 12 that is excited by the excitation light and emits fluorescence.
  • a light distribution adjusting layer 31 that is formed between the phosphor layers 12 and changes the emission direction of the fluorescence emitted from at least the phosphor layers is roughly constituted.
  • the phosphor layer 12 is formed on one surface of the substrate 13, and a light distribution adjustment layer 31 is formed between the phosphor layer 12 and the substrate 13.
  • each structural member which comprises the light-emitting device 30, and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
  • the excitation light source 11 for exciting the phosphor a light source that emits ultraviolet light or blue light is used.
  • a light source that emits ultraviolet light or blue light.
  • examples of such a light source include an ultraviolet light emitting diode (hereinafter sometimes abbreviated as “ultraviolet LED”), a blue light emitting diode (hereinafter sometimes abbreviated as “blue LED”), and an ultraviolet light emitting inorganic electroluminescence.
  • An element hereinafter sometimes abbreviated as “ultraviolet light emitting inorganic EL element”
  • a blue light emitting inorganic electroluminescence element hereinafter sometimes abbreviated as “blue light emitting inorganic EL element”
  • an ultraviolet light emitting organic electroluminescence element hereinafter, light emitting elements such as “ultraviolet light emitting organic EL element” and blue light emitting organic electroluminescence element (hereinafter sometimes abbreviated as “blue light emitting organic EL element”) may be used.
  • the excitation light source 11 include those described above, but are not limited thereto.
  • the excitation light source 11 by directly switching the excitation light source 11, it is possible to control ON / OFF of light emission for displaying an image.
  • a liquid crystal or the like is provided between the excitation light source 11 and the phosphor layer 12. It is also possible to control ON / OFF of light emission by arranging a layer having a proper shutter function and controlling it. Moreover, it is also possible to control ON / OFF of both the layer having a shutter function such as liquid crystal and the excitation light source 11.
  • the phosphor layer 12 absorbs excitation light from light emitting elements such as an ultraviolet LED, a blue LED, an ultraviolet light emitting inorganic EL element, a blue light emitting inorganic EL element, an ultraviolet light emitting organic EL element, and a blue light emitting organic EL element.
  • the red phosphor layer that emits blue light, the green phosphor layer, and the blue phosphor layer.
  • the red phosphor layer, the green phosphor layer, and the blue phosphor layer are made of, for example, a thin film having a rectangular shape in plan view.
  • each pixel constituting the phosphor layer 13 it is preferable to add phosphors emitting light of cyan and yellow to each pixel constituting the phosphor layer 13 as necessary.
  • phosphors emitting light of cyan and yellow by setting the color purity of each pixel emitting light to cyan and yellow outside the triangle connected by the color purity points of red, green, and blue light emitting pixels on the chromaticity diagram, red, The color reproduction range can be further expanded as compared with a display device that uses pixels that emit three primary colors of green and blue.
  • the phosphor layer 12 may be composed of only the phosphor material exemplified below, and may optionally contain additives, etc., and these materials are in a polymer material (binding resin) or an inorganic material. The configuration may be distributed in a distributed manner.
  • a known phosphor material can be used as the phosphor material constituting the phosphor layer 12. Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • stilbenzene dyes 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstil Benzene
  • coumarin dyes 7-hydroxy-4-methylcoumarin, 2,3,6,7-tetrahydro-11-oxo-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolidine- Ethyl 10-carboxylate (coumarin 314), 10-acetyl-2,3,6,7-tetrahydro-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolizin-11-one (coumarin) 334), anthracene dyes: 9,10 bis (phenylethynyl) anthracene, perylene and the like.
  • Organic phosphor materials include coumarin dyes: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine as green fluorescent dyes that convert ultraviolet and blue excitation light into green light emission (9,9a, 1-gh) coumarin (coumarin 153), 3- (2′-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2′-benzoimidazolyl) -7-N, N-diethylaminocoumarin (Coumarin 7), 10- (benzothiazol-2-yl) -2,3,6,7-tetrahydro-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolizin-11-one (Coumarin 545), coumarin 545T, coumarin 545P, naphthalimide dyes: basic yellow 51, solvent yellow 11, solvent Yellow 98, Solvent Yellow 116, Solvent Yellow 43, Solvent Yellow 44, Perylene dyes: Lum
  • Organic phosphor materials include cyanine dyes: 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H as red fluorescent dyes that convert ultraviolet and blue excitation light into red light emission.
  • pyridine dye 1-ethyl-2- [4- (p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate (pyridine 1)
  • xanthene dye rhodamine B, rhodamine 6G , Rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101, basic violet 11, basic red 2
  • perylene dye lumogen orange, lumogen pink, rumogen red, solvent orange 55, oxazine dye, chrysene dye, Thiofurabi Dye, pyrene dye, anthracene dye, acridone dye, a
  • each color phosphor When an organic phosphor material is used as each color phosphor, it is desirable to use a dye that is not easily degraded by blue light, ultraviolet light, or external light of the backlight. In this respect, it is particularly preferable to use a perylene dye having excellent light resistance and a high quantum yield.
  • Sr 2 P 2 O 7 Sn 4+
  • Sr 4 Al 14 O 25 Eu 2+
  • BaMgAl 10 O 17 Eu are used as blue phosphors that convert ultraviolet excitation light into blue light emission.
  • inorganic phosphor materials include (BaMg) Al 16 O 27 : Eu 2+ , Mn 2+ , Sr 4 Al 14 O 25 : Eu 2+ , as green phosphors that convert ultraviolet and blue excitation light into green light emission.
  • Y 2 O 2 S Eu 3+
  • YAlO 3 Eu 3+
  • Ca 2 Y 2 (SiO 4 ) 6 is used as a red phosphor that converts ultraviolet and blue excitation light into red light emission.
  • the inorganic phosphor material may be subjected to surface modification treatment as necessary.
  • the surface modification treatment include chemical treatment using a silane coupling agent, physical treatment using addition of submicron order fine particles, and combinations thereof.
  • the average particle diameter (d 50 ) is preferably 0.5 to 50 ⁇ m. If the average particle size of the inorganic phosphor material is less than 0.5 ⁇ m, the luminous efficiency of the phosphor is drastically lowered. If the average particle size of the inorganic phosphor material exceeds 50 ⁇ m, it becomes very difficult to form a planarizing film, and a gap is formed between the phosphor layer 12 and the excitation light source 11 (excitation light source). 11 and the phosphor layer 12 (refractive index: about 2.3), the light from the excitation light source 11 does not efficiently reach the phosphor layer 12, and the phosphor layer. There arises a problem that the luminous efficiency of 12 is lowered.
  • the phosphor layer 12 is prepared by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, a discharge coating method, Known wet processes such as coating methods such as spray coating, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, microgravure coating methods, and the like, and resistance heating vapor deposition method, electron beam ( EB) It can be formed by a known dry process such as a vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor deposition (OVPD) method, or a formation method such as a laser transfer method.
  • a spin coating method such as spray coating, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, microgravure coating methods, and the like
  • resistance heating vapor deposition method electron beam (
  • the phosphor layer 12 can be patterned by a photolithography method by using a photosensitive resin as a polymer resin.
  • a photosensitive resin a photosensitive resin (photocurable resist material) having a reactive vinyl group such as an acrylic acid resin, a methacrylic acid resin, a polyvinyl cinnamate resin, or a hard rubber resin is used. It is possible to use one kind or a mixture of several kinds.
  • wet process such as ink jet method, relief printing method, intaglio printing method, screen printing method, dispenser method, resistance heating vapor deposition method using shadow mask, electron beam (EB) vapor deposition method, molecular beam epitaxy (MBE) method, It is also possible to directly pattern the phosphor material by a known dry process such as a sputtering method or an organic vapor deposition (OVPD) method, or a laser transfer method.
  • a dry process such as a sputtering method or an organic vapor deposition (OVPD) method, or a laser transfer method.
  • the binder resin material is preferably a translucent resin.
  • the resin material include acrylic resin, melamine resin, polyester resin, polyurethane resin, alkyd resin, epoxy resin, butyral resin, polysilicone resin, polyamide resin, polyimide resin, melanin resin, phenol resin, polyvinyl alcohol, polyvinyl Hydrine, hydroxyethyl cellulose, carboxymethyl cellulose, aromatic sulfonamide resin, urea resin, benzoguanamine resin, triacetyl cellulose (TAC), polyethersulfone, polyetherketone, nylon, polystyrene, melamine beads, polycarbonate, polyvinyl chloride, Polyvinylidene chloride, polyvinyl acetate, polyethylene, polymethyl methacrylate, poly MBS, medium density polyethylene, high density polyethylene, tetrafluoroethylene Oroechiren, poly trifluorochloroethylene, polytetrafluoroethylene and the like.
  • the thickness of the phosphor layer 12 is usually about 100 nm to 100 ⁇ m, but preferably 1 ⁇ m to 100 ⁇ m. If the film thickness is less than 100 nm, it is impossible to sufficiently absorb the light emitted from the excitation light source 11, so that the light emission efficiency is reduced, or the required color is mixed with blue transmitted light, resulting in color purity. Problems such as deterioration. Furthermore, in order to increase absorption of light emitted from the excitation light source 11 and reduce blue transmitted light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 ⁇ m or more. Further, when the film thickness exceeds 100 ⁇ m, the blue light emission from the excitation light source 11 is already sufficiently absorbed, so that the efficiency is not increased but only the material is consumed and the material cost is increased.
  • an inorganic material substrate made of glass, quartz, etc., polyethylene
  • plastic substrates made of terephthalate, polycarbazole, polyimide, and the like, but the present embodiment is not limited to these substrates.
  • a plastic substrate from the viewpoint that it is possible to form a bent portion or a bent portion without any stress. Further, from the viewpoint that the gas barrier property can be improved, a substrate obtained by coating a plastic substrate with an inorganic material is more preferable. As a result, when the plastic substrate is used as the substrate of the organic EL element, the deterioration of the organic EL element due to the permeation of moisture, which is the biggest problem (the organic EL element is known to deteriorate even with a low amount of moisture, in particular). Can be eliminated.
  • the light distribution adjustment layer 31 is provided between the phosphor layer 12 and the substrate 13 and has a property of changing the light distribution profile of the fluorescence incident on the substrate 13 out of the fluorescence emitted from the phosphor layer 12. .
  • the light distribution adjusting layer 31 may be made of a light scattering material containing at least one particle and a light-transmitting resin.
  • the particles may be either inorganic materials or organic materials.
  • an inorganic material for example, a particle (fine particle) mainly composed of an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin and antimony.
  • the present embodiment is not limited to these inorganic materials.
  • particles (inorganic fine particles) made of an inorganic material for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), titanium oxide beads ( Anatase type refractive index: 2.52, rutile type refractive index: 2.71), zirconia bead (refractive index: 2.05), zinc oxide beads (refractive index: 2.00), barium titanate (BaTiO) 3 ) (refractive index: 2.4) and the like, but this embodiment is not limited to these inorganic fine particles.
  • particles composed of an organic material
  • polymethyl methacrylate beads reffractive index: 1.49
  • acrylic beads reffractive index: 1.50
  • acrylic-styrene Polymer beads reffractive index: 1.54
  • melamine beads reffractive index: 1.57)
  • high refractive index melamine beads refractive index: 1.65
  • polycarbonate beads refractive index: 1.57
  • styrene beads Refractive index: 1.60
  • crosslinked polystyrene beads Refractive index: 1.61
  • polyvinyl chloride beads reffractive index: 1.60
  • melamine formaldehyde beads reffractive index: 1.65
  • benzoguanamine-melamine formaldehyde Examples include beads (refractive index: 1.68) and silicone beads (refractive index: 1.50). It is not limited to the organic fine particles.
  • the translucent resin for example, acrylic resin (refractive index: 1.49), melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60). , Melamine beads (refractive index: 1.57), polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate ( Refractive index: 1.46), polyethylene (refractive index: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1) .53), high density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), poly (trifluoroethylene chloride) (refractive index: 1.42), polytetrafluoroethylene (refractive index) : .35), and the
  • the light scatterer material can be formed by dispersing particles in the above-described translucent resin.
  • the disperser is equipped with a general agitator equipped with mechanisms such as propeller blades, turbine blades, and battle blades at the tip, or a toothed disk-shaped impeller mechanism with circular saw blades bent alternately up and down.
  • the particle size, the refractive index, the concentration, the refractive index of the translucent resin, and the film thickness of the light distribution adjusting layer 31 of the particles constituting the light scatterer material depend on the light distribution profile of the fluorescence emitted from the phosphor layer 12. To optimize.
  • the luminance value of the oblique direction component is larger. Therefore, it is necessary to suppress the brightness to a value equal to or less than the luminance value in the 0 ° direction, so that particles having a particle size equivalent to the wavelength of light are used, the concentration of the particles is increased, or the particles and the translucent resin are used. It is preferable to increase the difference in refractive index or increase the film thickness.
  • the average particle size of the particles is more preferably 150 nm to 900 nm.
  • the particle size of the particles is about the same as the wavelength with respect to the light in the entire visible light region, and the light hitting the particles causes Mie scattering in which forward scattering and side scattering are dominant, and in an oblique direction.
  • the direction of the traveling light can be changed.
  • the concentration of the particles with respect to the translucent resin is more preferably 0.5 wt% to 5 wt%.
  • concentration of the particles with respect to the translucent resin is more preferably 0.5 wt% to 5 wt%.
  • it is 0.5 wt% or less, sufficient scattering characteristics cannot be obtained, and as a result, light in an oblique direction is lost as it is.
  • it is 5 wt% or more, the backscattered light component increases, resulting in a low transmittance.
  • the difference in refractive index between the particles and the translucent resin is 0.05 or more. If it is 0.05 or less, sufficient scattering characteristics cannot be obtained, and as a result, light in an oblique direction passes through as it is.
  • the film thickness of the light scattering layer 31 is more preferably 1 ⁇ m to 15 ⁇ m. If it is 1 ⁇ m or less, sufficient scattering characteristics cannot be obtained, and as a result, light in an oblique direction passes through as it is. On the other hand, when it is 15 ⁇ m or more, the backscattered light component increases, and as a result, the transmittance decreases.
  • the light distribution adjustment layer 31 is not limited to the above-described configuration including the particles and the translucent resin.
  • the light distribution adjustment layer 31 is incident by refraction and reflection by forming a random fine structure on the surface. It may be a layer that changes the direction of light.
  • the light emission in the light-emitting device 30 is demonstrated.
  • the light emitting device 30 when excitation light enters the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle.
  • the viewing angle the angle formed by the surface perpendicular to the light emitting surface and the viewing direction
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  • the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to.
  • a light-emitting device that does not change in brightness when viewed from any direction can be obtained.
  • the substrate 13 exists between the light distribution adjustment layer 31 and the outside, the influence on the characteristics of the light distribution adjustment layer 31 due to changes in the surrounding environment can be minimized.
  • FIG. 4 is a schematic cross-sectional view showing a second embodiment of the light emitting device. 4, the same components as those of the light emitting device 30 shown in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.
  • the light emitting device 40 changes an emission direction of fluorescence emitted from the excitation light source 11 that emits excitation light, a phosphor layer 12 that emits fluorescence when excited by the excitation light on the excitation light source, and at least the phosphor layer 12.
  • the light distribution adjusting layer 31 is generally configured.
  • the light emission in the light-emitting device 40 is demonstrated.
  • the light emitting device 40 when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle.
  • the viewing angle the angle formed by the surface perpendicular to the light emitting surface and the viewing direction
  • this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  • the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to.
  • a light-emitting device that does not change in brightness when viewed from any direction can be obtained.
  • the light emitted from the light distribution adjustment layer 31 is extracted as it is without passing through other layers, so that the emission profile can be optimized only by adjusting the light distribution adjustment layer 31. Can do.
  • FIG. 5 is a schematic cross-sectional view showing a light emitting device according to a third embodiment.
  • the light-emitting device 50 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed opposite to the excitation light source and on which a phosphor layer 12 that is excited by the excitation light and emits fluorescence is formed, the substrate 13, and the substrate At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer. It is generally composed of a light reflective barrier 51 on one or more sides.
  • Examples of the light-reflective barrier 51 include a structure in which a reflective metal powder such as Al, Ag, Au, Cr, or an alloy thereof, or a reflective resin film made of a resin containing metal particles is formed.
  • a reflective metal powder such as Al, Ag, Au, Cr, or an alloy thereof
  • a reflective resin film made of a resin containing metal particles is formed.
  • the present embodiment is not limited to these.
  • the barrier 51 may have a light scattering property at least in a portion in contact with the phosphor layer 12.
  • a material for forming the barrier 51 itself hereinafter referred to as “barrier material” or a material for forming a light scattering layer (light scattering film) provided on the side surface of the barrier 51 (hereinafter referred to as “light scattering film material”).
  • carrier material a material for forming the barrier 51 itself
  • light scattering film material a material for forming a light scattering layer (light scattering film) provided on the side surface of the barrier 51
  • a material containing a resin and light scattering particles is used.
  • the resin examples include acrylic resin (refractive index: 1.49), melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60), melamine beads. (Refractive index: 1.57), polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate (refractive index: 1.46), polyethylene (refractive index: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1.53) , High density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), poly (ethylene trifluoride) chloride (refractive index: 1.42), polytetrafluoroethylene (refractive index: 1.2. 3 ) And the like, but the
  • the light scattering particles may be either an inorganic material or an organic material.
  • the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples include particles (fine particles), but the present embodiment is not limited to these inorganic materials.
  • particles (inorganic fine particles) made of an inorganic material are used as the light scattering particles, for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), oxidation Titanium beads (anatase type refractive index: 2.50, rutile type refractive index: 2.70), zirconia oxide beads (refractive index: 2.05), zinc oxide beads (refractive index: 2.00), titanic acid barium (BaTiO 3) (refractive index: 2.4), but like the present embodiment is not limited to these inorganic fine particles.
  • particles (organic fine particles) made of an organic material are used as the light scattering particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic -Styrene copolymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57) Styrene beads (refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), benzoguanamine-melamine formaldehyde beads (refractive index: 1.68) And silicone beads (refractive index: 1.50), and the like, but this embodiment is not limited to these organic fine particles.
  • the barrier material and the light scattering film material may contain an antifoaming agent / leveling agent such as a photopolymerization initiator, dipropylene glycol monomethyl ether, and 1- (2-methoxy-2-methylethoxy) -2-propanol. .
  • the barrier 51 may be white.
  • the barrier material and the light scattering film material may contain a white resist.
  • the white resist include a carboxyl group-containing resin having no aromatic ring, a photopolymerization initiator, a hydrogenated epoxy compound, a rutile type titanium oxide, and a material containing a diluent.
  • the barrier material and the light scattering film material can be made into a photoresist.
  • the light scattering layer provided on the side surface of the barrier 15 can be patterned by photolithography.
  • the light emission in the light-emitting device 50 is demonstrated.
  • the light emitting device 50 when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle.
  • the viewing angle the angle formed by the surface perpendicular to the light emitting surface and the viewing direction
  • this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  • the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to.
  • a light-emitting device that does not change in brightness when viewed from any direction can be obtained.
  • the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence
  • the fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side.
  • the light-reflective barrier 51 on the side surface of the phosphor layer 12, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer 12 to the outside. If the portion of the barrier 51 in contact with the phosphor layer 12 has light scattering properties, for example, when the fluorescent component that has been totally reflected once by the substrate is reflected by the barrier 51 and reenters the substrate, first, the substrate The fluorescent component totally reflected at 13 and incident on the barrier 51 is reflected (scattered) by the barrier 51 at an angle different from the incident angle and is incident on the substrate at an angle different from the first angle. There is little possibility of being reflected, and it can be taken out to the outside. That is, by providing the light-scattering barrier 51 on the side surface of the phosphor layer 12, the fluorescent component emitted from the phosphor layer 12 can be taken out more efficiently.
  • FIG. 6 is a schematic cross-sectional view showing a light emitting device according to a fourth embodiment.
  • the light-emitting device 60 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed to face the excitation light source, and is formed with a phosphor layer 12 that is excited by the excitation light and emits fluorescence. At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer.
  • a light-reflective barrier 51 is formed on one or more side surfaces, and a wavelength selective transmission / reflection layer 61 formed on the phosphor layer 12 on the incident surface side on which excitation light is incident.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface of the excitation light of the phosphor layer 12 and the upper surface of the barrier 51, and transmits at least light corresponding to the peak wavelength of the excitation light from the excitation light source 11. It is a layer having a characteristic of reflecting at least light corresponding to the emission peak wavelength of the body layer 12.
  • the fluorescent component directed toward the back side of the light emitting device 60 is efficiently transmitted by the wavelength selective transmission / reflection layer 61 provided on the incident surface of the phosphor layer 12. Therefore, the light can be reflected in the front direction, and the light emission efficiency can be improved.
  • Examples of the wavelength selective transmission / reflection layer 61 include a dielectric multilayer film, a metal thin film glass, an inorganic material substrate made of quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like. However, it is not limited to these substrates.
  • the light emission in the light-emitting device 60 is demonstrated.
  • the light emitting device 60 when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile.
  • this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light.
  • the light path length in the light distribution adjusting layer 31 is longer in the light distribution layer 31 for light incident perpendicularly to the surface of the light scattering layer 31 and light incident in an oblique direction.
  • the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to.
  • a light-emitting device that does not change in brightness when viewed from any direction can be obtained.
  • the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence
  • the fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side.
  • the light-reflective barrier 51 on the side surface of the phosphor layer 12, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer 12 to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer 12, the opposite side (rear side) of the phosphor layer 12 to the light extraction side.
  • the fluorescent component that emits light is reflected at the interface between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the incident surface side of the phosphor layer 12 where the excitation light is incident, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. .
  • FIG. 7 is a schematic cross-sectional view showing a light emitting device according to a fifth embodiment.
  • the light-emitting device 70 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed opposite to the excitation light source, and is formed with a phosphor layer 12 that is excited by the excitation light and emits fluorescence. At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer.
  • the low refractive index layer 71 is provided between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and out of the fluorescence emitted from the phosphor layer, the critical angle of the interface between the phosphor layer and the low refractive index layer is greater than the critical angle.
  • a layer having a feature of reflecting at least the fluorescence incident on the interface is a low refractive index provided between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61.
  • the layer 71 can be efficiently reflected in the front direction, and the light emission efficiency can be improved.
  • Examples of the low refractive index layer 71 include a fluorine resin having a refractive index of about 1.35 to 1.4, a silicone resin having a refractive index of about 1.4 to 1.5, and a silica having a refractive index of about 1.003 to 1.3.
  • Examples include airgel and transparent materials such as porous silica having a refractive index of about 1.2 to 1.3. However, the present embodiment is not limited to these materials.
  • the refractive index of the low refractive index layer 71 is preferably as low as possible.
  • the low refractive index layer 71 is made of silica airgel or porous material in order to have pores or voids in the low refractive index layer 71. Those formed of silica or the like are more preferable. Silica airgel is particularly preferred because it has a very low refractive index.
  • Silica airgel is disclosed in, for example, US Pat. No. 4,402,827, Japanese Patent Publication “Patent No. 4279971”, Japanese Published Patent Publication “JP-A 2001-202827” and the like. It is produced by drying a gel compound in a wet state comprising a silica skeleton obtained by a polymerization reaction in the presence of a solvent such as alcohol or carbon dioxide in a supercritical state above the critical point of the solvent.
  • a solvent such as alcohol or carbon dioxide
  • the low refractive index layer 71 is preferably made of a gas. As described above, the refractive index of the low refractive index layer 71 is preferably as low as possible. However, when the low refractive index layer 71 is formed of a material such as a solid, liquid, or gel, US Pat. No. 4,402,827 and Japanese Patent Publication “ As described in Japanese Patent No. 4279971 ”, Japanese Patent Application Publication“ JP-A 2001-202827 ”and the like, the lower limit of the refractive index is about 1.003. On the other hand, if the low refractive index layer 16 is a gas layer made of a gas such as oxygen or nitrogen, for example, the refractive index can be set to 1.0, and the fluorescence is extracted to the outside very efficiently. It becomes possible.
  • the light emission in the light-emitting device 70 is demonstrated.
  • the light emitting device 70 when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle.
  • the viewing angle the angle formed by the surface perpendicular to the light emitting surface and the viewing direction
  • this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  • the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to.
  • a light-emitting device that does not change in brightness when viewed from any direction can be obtained.
  • the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence
  • the fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side.
  • the light-reflective barrier 51 on the side surface of the phosphor layer 12, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer 12 to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer 12, the opposite side (rear side) of the phosphor layer 12 to the light extraction side.
  • the fluorescent component that emits light is reflected at the interface between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the incident surface side of the phosphor layer 12 where the excitation light is incident, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. .
  • the phosphor layer 12 is on the opposite side (back side) to the light extraction side.
  • the fluorescent components that emit light the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced.
  • the wavelength selective transmission / reflection layer 61 when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently.
  • FIG. 8 is a schematic cross-sectional view showing a light emitting device of a sixth embodiment. 8, the same components as those of the light emitting device 30 shown in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.
  • the light-emitting device 80 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed opposite to the excitation light source and on which a phosphor layer 12 that is excited by the excitation light and emits fluorescence is formed. At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer.
  • a low refractive index layer 81 with a low refractive index It is schematic configuration.
  • the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layer 12, and the critical angle at the interface between the phosphor layer 31 and the low refractive index layer 81 among the fluorescence emitted from the phosphor layer.
  • the critical angle at the interface between the phosphor layer 31 and the low refractive index layer 81 among the fluorescence emitted from the phosphor layer.
  • it is incident on the substrate 13 from the phosphor layer 12 but cannot be taken out from the substrate.
  • It is a layer characterized by suppressing the component which carries out.
  • a fluorescent component directed to the front side of the light emitting device 80 is a low refractive index provided between the light distribution control layer 31 and the phosphor layer 12.
  • the layer 81 can be efficiently taken out, and the light emission efficiency can be improved.
  • the light emission in the light-emitting device 80 is demonstrated.
  • the light emitting device 70 when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31.
  • a light-emitting device that does not change in brightness when viewed from any direction can be obtained.
  • the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence
  • the fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 on the side surface of the phosphor layer 12, the fluorescent component emitted from the phosphor layer 12 can be efficiently extracted outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer 12, the opposite side (rear side) of the phosphor layer 12 to the light extraction side.
  • the fluorescent component that emits light is reflected at the interface between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the incident surface side of the phosphor layer 12 where the excitation light is incident, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. .
  • the phosphor layer 12 is on the opposite side (back side) to the light extraction side.
  • the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently.
  • the low refractive index layer 81 is provided between the light distribution adjustment layer 31 and the phosphor layer 12, among the fluorescent components that emit light on the light extraction side of the phosphor layer 12, fluorescence
  • the fluorescence component emitted from the phosphor layer 31 at a shallow angle is prevented from entering the substrate. be able to. That is, it is possible to suppress a loss component that is incident on the substrate 13 but is reflected at the interface between the substrate 13 and the outside and cannot be extracted to the outside and is guided in the substrate 13. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layer 12, the fluorescent component emitted from the phosphor layer 12 can be extracted outside without loss.
  • FIG. 9 is a schematic cross-sectional view showing a light emitting device according to a seventh embodiment.
  • the light-emitting device 90 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the light distribution adjusting layer 31 that changes the light intensity, the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the incident surfaces on which the excitation light is incident on the phosphor layers 91 to 93
  • the light distribution layer 31 and the fluorescence Between the layers 91-93 are schematic configuration of a small low-refractive index layer 81. refractive index than the phosphor layer 91-93.
  • the light emission in the light-emitting device 90 is demonstrated.
  • the light emitting device 90 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the incident fluorescence changes in the light distribution adjusting layer 31 due to light scattering.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31.
  • a light emission profile in which the luminance increases as the viewing angle increases has a light emission profile in which the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31.
  • the fluorescent component is extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced.
  • the wavelength selective transmission / reflection layer 61 when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out very efficiently to the outside. It becomes possible.
  • the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescent component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  • FIG. 10 is a schematic cross-sectional view showing a light emitting device according to an eighth embodiment.
  • the light-emitting device 100 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed opposite to the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the emission direction of fluorescence emitted from at least the phosphor layers 91 to 93 formed between the substrate 13 on which the third phosphor layer 93 is formed, and the substrate 13 and the phosphor layers 91 to 93.
  • the light distribution adjusting layer 31 includes the barrier 51 and the substrate 13. It is formed so as to spread upward.
  • the light emission in the light-emitting device 100 is demonstrated.
  • the light emitting device 100 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the incident fluorescence changes in the light distribution adjusting layer 31 due to light scattering.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31.
  • a light emission profile in which the luminance increases as the viewing angle increases has a light emission profile in which the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31.
  • the fluorescent component is extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled.
  • the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out very efficiently to the outside. It becomes possible.
  • the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layers 91 to 93, the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  • the light distribution adjusting layer 31 is formed between the barrier layers 51 on the side surfaces of the phosphor layers 91 to 93, the phosphor layers 91 to 93 laterally extend from the phosphor layers 91 to 93.
  • a part of the fluorescent component can be backscattered (reflected) by the light distribution adjusting layer 31.
  • the reflecting ability of the barrier can be enhanced through the light distribution adjusting layer 13, and light incident on the barrier 51 can be prevented from passing through the barrier 51 and entering an adjacent pixel. it can.
  • the light distribution adjustment layer is partitioned by a barrier when viewed from the light extraction direction, it is possible to prevent light from entering the adjacent pixels through the light distribution adjustment layer.
  • FIG. 11 is a schematic sectional view showing a light emitting device according to the ninth embodiment.
  • the light-emitting device 110 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • a light distribution adjustment layer 112 which is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and which changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other.
  • Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and between the light distribution control layers 111 to 113 and the phosphor layers 91 to 93, a low refractive index having a refractive index lower than that of the phosphor layers 91 to 93.
  • the refractive index layer 81 is generally configured.
  • the light emission in the light-emitting device 110 is demonstrated.
  • the light emitting device 110 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively.
  • the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction.
  • the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  • the low refractive index layer 81 is provided between the light distribution adjusting layers 111 to 113 and the phosphor layers 91 to 93, light is emitted to the light extraction side of the phosphor layers 91 to 93.
  • the fluorescent component emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed.
  • the light distribution adjustment layer is partitioned by a barrier when viewed from the light extraction direction, so that light can be prevented from entering the adjacent pixels by being guided through the light distribution adjustment layer. .
  • the particle size parameter ⁇ greatly affects the scattering characteristics.
  • forward scattering and side scattering are dominant, and a so-called Mie scattering region in which little scattering occurs in the back is obtained.
  • the particle size parameter ⁇ is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter ⁇ 1.
  • FIG. 12 is a schematic sectional view showing a light emitting device according to the tenth embodiment.
  • the light emitting device 120 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed to face the excitation light source, and that emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the light distribution adjusting layer 31 that changes the light intensity, the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the incident surfaces on which the excitation light is incident on the phosphor layers 91 to 93
  • the light distribution layer 31 and the firefly A low refractive index layer 81 having a refractive index smaller than that of the phosphor layers 91 to 93 and a light absorption layer 121 formed between the light distribution adjusting layer 31 and the barrier 51, respectively, between the body layers 91 to 93. It is roughly composed.
  • the light absorption layer 121 is made of a light-absorbing material, and is formed corresponding to a region between adjacent pixels.
  • the light absorption layer 121 can improve display contrast.
  • the film thickness of the light absorption layer 121 is usually about 100 nm to 100 ⁇ m, preferably 100 nm to 10 ⁇ m. Further, in order to efficiently extract light emitted from the side surface of the phosphor layer 13 to the outside, it is preferable that the thickness of the light absorption layer 121 is smaller than the thickness of the phosphor layers 91 to 93.
  • the light emission in the light-emitting device 120 is demonstrated.
  • the light emitting device 120 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the incident fluorescence changes in the light distribution adjusting layer 31 due to light scattering.
  • the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31.
  • a light emission profile in which the luminance increases as the viewing angle increases has a light emission profile in which the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31.
  • the fluorescent component is extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced.
  • the wavelength selective transmission / reflection layer 61 when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out very efficiently to the outside. It becomes possible.
  • the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescent component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  • the phosphor layer 91 is provided. It is possible to prevent the fluorescence emitted from .about.93 from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  • FIG. 13 is a schematic sectional view showing a light emitting device according to the eleventh embodiment.
  • the light-emitting device 130 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91 is defined.
  • a light distribution adjustment layer 112 that is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor. Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other.
  • Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and between the light distribution control layers 111 to 113 and the phosphor layers 91 to 93, a low refractive index having a refractive index lower than that of the phosphor layers 91 to 93.
  • a light absorbing layer 121 is formed between the refractive index layer 81 and the light distribution adjusting layers 111 to 113 adjacent to each other and between the substrate 13 and the barrier 51, respectively.
  • the light emission in the light-emitting device 130 is demonstrated.
  • the light emitting device 130 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively.
  • the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction.
  • the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  • the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided.
  • the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed.
  • the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out without loss. It becomes possible.
  • the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also.
  • the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  • the particle size parameter ⁇ greatly affects the scattering characteristics.
  • the particle size parameter ⁇ is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter ⁇ 1.
  • FIG. 14 is a schematic cross-sectional view showing a light emitting device according to the tenth embodiment.
  • the light-emitting device 140 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source and that is excited by the excitation light to emit fluorescence, and a second phosphor layer 92.
  • the emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91 is defined.
  • a light distribution adjustment layer 112 that is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor. Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other.
  • Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and light distribution control layers 111 to 113 and phosphor layers 91 to 93 having a refractive index lower than that of phosphor layers 91 to 93.
  • a light absorption layer 121 formed between the substrate 13 and the barrier 51, and an excitation light incident surface of the barrier 51 is formed roughly.
  • the light emission in the light-emitting device 140 is demonstrated.
  • the light emitting device 140 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively.
  • the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction.
  • the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  • the low refractive index layer 81 is provided between the light distribution adjusting layers 111 to 113 and the phosphor layers 91 to 93, light is emitted to the light extraction side of the phosphor layers 91 to 93.
  • the fluorescent component emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  • the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also.
  • the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  • the excitation light since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered.
  • the particle size parameter ⁇ greatly affects the scattering characteristics.
  • the particle size parameter ⁇ is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter ⁇ 1.
  • FIG. 15 is a schematic sectional view showing a light emitting device according to the thirteenth embodiment.
  • the light-emitting device 150 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed opposite to the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91 is defined.
  • a light distribution adjustment layer 112 that is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor. Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other.
  • Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and light distribution control layers 111 to 113 and phosphor layers 91 to 93 having a refractive index lower than that of phosphor layers 91 to 93.
  • a light absorption layer 121 formed between the substrate 13 and the barrier 51, and an excitation light incident surface of the barrier 51 Of the second light absorption layer 141 formed on the substrate, the substrate 13, the first color filter 151 formed between the first light distribution control layer 111, and the second light distribution adjustment layer 112.
  • a conventional color filter can be used as the color filter.
  • the color filter By providing the color filter, the color purity of the fluorescence emitted from the phosphor layer can be increased, and the color reproduction range can be expanded.
  • the color filter provided in each phosphor layer absorbs the excitation light component contained in the external light, so it is possible to reduce or prevent the phosphor layer from emitting light due to the external light, reducing the decrease in contrast Or it can be prevented.
  • the light emission in the light-emitting device 150 is demonstrated.
  • the light emitting device 150 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively.
  • the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction.
  • the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  • the low refractive index layer 81 is provided between the light distribution adjusting layers 111 to 113 and the phosphor layers 91 to 93, light is emitted to the light extraction side of the phosphor layers 91 to 93.
  • the fluorescent component emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  • the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also.
  • the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  • the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered.
  • the color filter formed on each phosphor layer absorbs the excitation light component contained in the external light, it is possible to reduce or prevent light emission of the phosphor layer due to the external light, resulting in a decrease in contrast. Can be reduced or prevented. Furthermore, since it is possible to prevent the excitation light that is not absorbed by the phosphor layer from leaking to the outside, it is possible to prevent the color purity from being deteriorated due to color mixture by light emission from the phosphor layer and the excitation light. it can.
  • the particle size parameter ⁇ greatly affects the scattering characteristics.
  • the particle size parameter ⁇ is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter ⁇ 1.
  • FIG. 16 is a schematic cross-sectional view showing a light emitting device according to a fourteenth embodiment.
  • the light-emitting device 160 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • a light distribution adjusting layer 111 that changes the emission direction of the fluorescence emitted from the layer 91 and a distribution that changes the emission direction of the fluorescence emitted from at least the phosphor layer 92 formed between the second phosphor layer 92.
  • And light distribution adjustment layer 1 1, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, the phosphor layers 91 to 92, the light distribution adjustment layer 161, and the wavelength selective transmission / reflection layer 61, A low refractive index layer 71 having a lower refractive index than the body layers 91 to 92, between the light distribution control layers 111 to 112 and the phosphor layers 91 to 92, and between the light distribution adjustment layer 161 and the color filter 153. Between the low refractive index layer 81 having a smaller refractive index than the phosphor layers 91 to 92 and the light distribution adjusting layers 111 to 112 and 161 adjacent to each other, between the substrate 13 and the barrier 51.
  • the light emission in the light-emitting device 160 is demonstrated.
  • the light emitting device 160 when excitation light is incident on the first phosphor layer 91 and the second phosphor layer 92 from the excitation light source 11, they are isotropic from each phosphor layer, that is, with equal energy in any direction. The light is emitted.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • the fluorescent component emitted from the first fluorescent layer 91 and the fluorescent component emitted from the second fluorescent layer 92 having different emission profiles are incident on the light distribution adjustment layer 111 and the light distribution adjustment layer 112, respectively, the incident fluorescence In the light distribution adjusting layer, the traveling direction of light changes due to light scattering.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91 and light emission 95 from the second phosphor layer 92. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 92 and the light distribution adjusting layer 161 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be very efficiently externally provided. It can be taken out.
  • the low refractive index layer 81 is provided between the substrate 13 and the phosphor layers 91 to 92 and the light distribution control layer 161, the light extraction side of the phosphor layers 91 to 92 is provided.
  • the fluorescent component that emits light the fluorescent component that is emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the substrate 13 and the phosphor layers 91 to 92, the fluorescent component emitted from the phosphor layers 91 to 92 can be extracted outside without loss.
  • the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also.
  • the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 92 are provided. It is possible to prevent the fluorescence emitted from the light or the light emitted from the light distribution adjustment layer 161 from entering the adjacent phosphor layers 91 to 92 or the light distribution adjustment layer 161 by light absorption. Can be improved.
  • the excitation light is the phosphor layers 91 to 92 or the light distribution adjustment. It is possible to prevent the light from entering the adjacent phosphor layers 91 to 92 or the light distribution adjusting layer 161 by light absorption without being incident on the layer 161 and being reflected by the bottom surface of the barrier 51, thereby reducing the display contrast. Can be prevented.
  • the color filter formed on each phosphor layer absorbs the excitation light component contained in the external light, it is possible to reduce or prevent light emission of the phosphor layer due to the external light, resulting in a decrease in contrast. Can be reduced or prevented. Furthermore, since it is possible to prevent the excitation light that is not absorbed by the phosphor layer from leaking to the outside, it is possible to prevent the color purity from being deteriorated due to color mixture by light emission from the phosphor layer and the excitation light. it can.
  • the third phosphor layer 93 and the third light distribution adjustment layer 113 in the thirteenth embodiment of the previous section are configured by only the light distribution adjustment layer 161, so that it is simple.
  • a light emitting device can be formed by the process.
  • the thickness of the light distribution adjusting layer can be increased by the thickness of the phosphor layers 91 to 92 of other pixels, so that the light distribution profile can be easily adjusted.
  • the particle size parameter ⁇ greatly affects the scattering characteristics.
  • the particle size parameter ⁇ is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter ⁇ 1.
  • FIG. 17 is a schematic sectional view showing a light emitting device according to the fifteenth embodiment.
  • the light-emitting device 170 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed opposite to the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the selective transmission / reflection layer 61, the phosphor layers 91 to 93, and the wavelength selective transmission / reflection layer 61 the low refractive index layer 71 having a refractive index smaller than that of the phosphor layers 91 to 93, and the light distribution control.
  • light emission in the light emitting device 170 will be described.
  • the light emitting device 170 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  • the light distribution profile of the fluorescence extracted outside is different for each phosphor layer.
  • a fluorescent component emitted from the first fluorescent layer 91, a fluorescent component emitted from the second fluorescent layer 92, and a fluorescent component emitted from the third fluorescent layer 93, each having a different emission profile, are arranged via the substrate 13.
  • the incident fluorescence changes in the light distribution adjustment layer due to light scattering in the light distribution adjustment layer.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  • the low refractive index layer 81 is provided between the substrate 13 and the phosphor layers 91 to 93, among the fluorescent components that emit light on the light extraction side of the phosphor layers 91 to 93,
  • the fluorescence incident on the interface at a critical angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. it can. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed.
  • the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss.
  • the phosphor layer is partitioned by the light absorption layer when viewed from the light extraction direction, light can be prevented from entering the adjacent pixels by being guided through the phosphor layer. .
  • the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  • the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered. Further, in this configuration, since the light emitted from the light distribution adjustment layer 171 is extracted as it is without passing through other layers, the light emission profile is optimized only by adjusting the light distribution adjustment layer 171. Can do.
  • FIG. 18 is a schematic sectional view showing a light emitting device according to the sixteenth embodiment.
  • the light emitting device 180 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92.
  • the selective transmission / reflection layer 61, the phosphor layers 91 to 93, and the wavelength selective transmission / reflection layer 61 the low refractive index layer 71 having a refractive index smaller than that of the phosphor layers 91 to 93, and the light distribution control.
  • the light reflection preventing layer 181 is generally configured. It is roughly composed.
  • the external light antireflection layer 181 is provided on the light distribution adjustment layer 171 and has, for example, a refractive index gradient between the light distribution adjustment layer 171 and the outside.
  • a refractive index gradient when the refractive index of the light distribution adjusting layer 171 is n1 and the external refractive index is n2, the light distribution adjusting layer 171 has a refractive index gradient from the light distribution adjusting layer 171 side toward the outside. It is preferable to have a gradient that gradually changes in the range from n1 to n2 in the thickness direction perpendicular to the light extraction surface. Specifically, it is preferable to have a gradient that changes stepwise or continuously.
  • the external light antireflection layer 181 can minimize the external light reflection component that is reflected when the external light hits the light distribution adjustment layer.
  • Such an external light antireflection layer 181 can be formed, for example, by (a1) laminating a plurality of layers (materials) having different refractive indexes stepwise or continuously. In addition, (a2) one or more microstructures having a minute inclination in the thickness direction are formed, and the proportion of the structure is continuously changed in the thickness direction, thereby preventing external light reflection having a refractive index gradient. Layer 151 can be formed.
  • a structure in which a TiO 2 layer and a SiO 2 layer are laminated can be mentioned.
  • a stacked structure including a combination of an MgO layer and an SiO 2 layer, a ZrO 2 layer and an SiO 2 layer, a PMMA layer and a silicon oil layer, and the like can also be given.
  • this embodiment is not limited to the combination of these materials.
  • examples of the material for forming the microstructure include transparent resins such as polyethylene, polypropylene, polycarbonate, and epoxy, and transparent inorganic materials such as SiO 2 and Si 3 N 4 . Furthermore, it is preferable to add a compound having a high refractive index to these materials, for example, a metal oxide such as TiO 2 , Cu 2 O, Fe 2 O 3 or the like. However, this embodiment is not limited to these materials.
  • the light emission in the light-emitting device 180 is demonstrated.
  • the light emitting device 180 when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction.
  • the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor.
  • the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer
  • the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • the phosphor layer is made of an inorganic phosphor material
  • the light emission characteristics vary depending on the particle size and shape of the phosphor particles. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  • a fluorescent component emitted from the first fluorescent layer 91, a fluorescent component emitted from the second fluorescent layer 92, and a fluorescent component emitted from the third fluorescent layer 93, each having a different emission profile, are arranged via the substrate 13.
  • the incident fluorescence changes in the light distribution adjustment layer due to light scattering in the light distribution adjustment layer.
  • the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  • the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  • the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side.
  • the fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side).
  • the fluorescent components the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  • the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle.
  • the reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  • the low refractive index layer 81 is provided between the substrate 13 and the phosphor layers 91 to 93, among the fluorescent components that emit light on the light extraction side of the phosphor layers 91 to 93, By reflecting the fluorescence incident on the interface at a critical angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. it can. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the substrate 13 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss.
  • the phosphor layer is partitioned by the light absorption layer when viewed from the light extraction direction, light can be prevented from entering the adjacent pixels by being guided through the phosphor layer.
  • the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  • the excitation light since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered.
  • the light emission profile is optimized only by adjusting the light distribution adjustment layer 171. Can do. Further, in this configuration, since the external light reflection preventing layer 181 formed on the light distribution adjustment layer 171 is provided, the external light reflection component that the external light reflects upon the light distribution adjustment layer 181 is minimized. Can be suppressed. That is, it is possible to minimize the decrease in contrast in a bright place.
  • the phosphor substrate refers to the phosphor layer, the light distribution adjusting layer, the barrier, and the light absorption layer in the first to sixteenth embodiments of the light emitting device described above. It is a substrate on which etc. are formed.
  • the light source is a substrate (light emitting element substrate) on which an excitation light source is formed in the first to sixteenth embodiments of the light emitting device described above.
  • the light source a known ultraviolet LED, blue LED, ultraviolet light emitting inorganic EL element, blue light emitting inorganic EL element, ultraviolet light emitting organic EL element, blue light emitting organic EL element, or the like is used.
  • the embodiment is not limited to these light sources, and a light source produced by a known material or a known manufacturing method can be used.
  • the ultraviolet light preferably emits light having a main light emission peak of 360 to 410 nm
  • the blue light preferably has light emission of a main light emission peak of 410 to 470 nm.
  • FIG. 19 is a schematic cross-sectional view showing an organic EL element substrate constituting a display device according to a first embodiment.
  • the display device of this embodiment includes a phosphor substrate comprising a substrate on which a phosphor layer, a light distribution adjusting layer, a barrier, a light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above.
  • the organic EL element substrate (light source) 210 is bonded to the phosphor substrate via a planarizing film or the like.
  • the organic EL element substrate 210 includes a substrate 211 and an organic EL element 212 provided on one surface 211a of the substrate 211.
  • the organic EL element 212 is schematically configured from a first electrode 213, an organic EL layer 214, and a second electrode 215 that are sequentially provided on one surface 211 a of the substrate 211. That is, the organic EL element 212 includes a pair of electrodes including the first electrode 213 and the second electrode 215 and an organic EL layer 214 sandwiched between the pair of electrodes on one surface 211a of the substrate 211. I have.
  • the first electrode 213 and the second electrode 215 function as a pair as an anode or a cathode of the organic EL element 212.
  • the optical distance between the first electrode 213 and the second electrode 215 is adjusted to constitute a microresonator structure (microcavity structure).
  • the organic EL layer 214 is laminated in order from the first electrode 213 side to the second electrode 215 side, the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer. 220 and an electron injection layer 221.
  • the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221 may each have a single layer structure or a multilayer structure.
  • the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221 may each be an organic thin film or an inorganic thin film.
  • the hole injection layer 216 efficiently injects holes from the first electrode 213.
  • the hole transport layer 217 efficiently transports holes to the light emitting layer 218.
  • the electron transport layer 220 efficiently transports electrons to the light emitting layer 218.
  • the electron injection layer 221 efficiently injects electrons from the second electrode 215.
  • the hole injection layer 216, the hole transport layer 217, the electron transport layer 220, and the electron injection layer 221 correspond to a carrier injection transport layer.
  • the organic EL element 212 is not limited to the above configuration, and the organic EL layer 214 may have a single layer structure of a light emitting layer or a multilayer structure of a light emitting layer and a carrier injection / transport layer. .
  • Specific examples of the configuration of the organic EL element 212 include the following. (1) Configuration in which only the light emitting layer is provided between the first electrode 213 and the second electrode 215 (2) The hole transport layer and the light emitting layer are formed from the first electrode 213 side toward the second electrode 215 side.
  • Second electrode 215 from the first electrode 213 side A structure in which a hole transport layer, a light emitting layer, and an electron transport layer are laminated in this order toward the side (5) From the first electrode 213 side to the second electrode 215 side, the hole injection layer, the hole transport layer (6) A structure in which a light emitting layer and an electron transport layer are laminated in this order (6) From the first electrode 213 side to the second electrode 215 side, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, Structure in which injection layers are laminated in this order (7) First electrode 213 side A structure in which a hole injection layer, a hole transport layer, a light emitting layer, a hole prevention layer, and an electron transport layer are laminated in this order toward the second electrode 215 side (8) From the first electrode 213 side to the second electrode 215 A structure in which a hole injection layer, a hole transport layer, a light emitting layer, a hole prevention layer, and an electron transport layer are laminated in this order toward the
  • An edge cover 222 is formed so as to cover the end face of the first electrode 213. That is, the edge cover 222 is formed on the one surface 211a of the substrate 211 between the first electrode 213 and the second electrode 215 in order to prevent leakage between the first electrode 213 and the second electrode 215. It is provided so as to cover the edge part of the formed first electrode 213.
  • each structural member which comprises the organic EL element substrate 210, and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
  • substrate etc. which performed the insulation process by this method are mentioned, this embodiment is not limited to these board
  • a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are preferable.
  • a substrate coated with such an inorganic material deterioration of organic EL due to moisture permeation, which is the biggest problem when a plastic substrate is used as a substrate of an organic EL element substrate (organic EL is particularly low in quantity) It is known that deterioration also occurs with respect to moisture.).
  • leakage (short) due to protrusions on the metal substrate which is the biggest problem when a metal substrate is used as the substrate of the organic EL element substrate (the film thickness of the organic EL layer is very thin, about 100 to 200 nm. It is known that leakage (short-circuiting) occurs in the current in the pixel portion due to the above.
  • a substrate that does not melt at a temperature of 500 ° C. or lower and does not generate distortion As the substrate 211.
  • a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT on a metal substrate with a conventional production apparatus, but the linear expansion coefficient is 1 ⁇ 10 ⁇ 5 / ° C. or less.
  • a metal substrate that is an iron-nickel alloy of this type and adjusting the linear expansion coefficient to glass it becomes possible to form TFTs on the metal substrate at low cost using a conventional production apparatus.
  • the TFT on the glass substrate is transferred to the plastic substrate, thereby transferring the TFT onto the plastic substrate. be able to.
  • the TFT formed on the substrate 211 is formed in advance on one surface 211a of the substrate 211 before the organic EL element 212 is formed, and functions as a pixel switching element and an organic EL element driving element.
  • a known TFT can be cited.
  • a metal-insulator-metal (MIM) diode can also be used.
  • TFTs that can be used in active drive organic EL display devices and organic EL display devices can be formed using known materials, structures, and formation methods.
  • the material of the active layer constituting the TFT include inorganic semiconductor materials such as amorphous silicon (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, cadmium selenide, zinc oxide, indium oxide-oxide Examples thereof include oxide semiconductor materials such as gallium-zinc oxide, and organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene.
  • the TFT structure include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.
  • an active layer forming method for forming a TFT (1) a method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD), and (2) a silane (SiH 4 ) gas is used.
  • PECVD plasma induced chemical vapor deposition
  • SiH 4 silane
  • amorphous silicon by low pressure chemical vapor deposition (LPCVD), crystallizing amorphous silicon by solid phase growth to obtain polysilicon, and then ion doping by ion implantation, (3) Si 2 H Amorphous silicon is formed by LPCVD using 6 gases or PECVD using SiH 4 gas, annealed by a laser such as an excimer laser, etc., and amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (Low temperature process), (4) LPCVD method or The polysilicon layer is formed by ECVD method, a gate insulating film formed by thermal oxidation at 1000 ° C.
  • LPCVD low pressure chemical vapor deposition
  • a method of performing ion doping high temperature Process
  • a method of forming an organic semiconductor material by an inkjet method a method of obtaining a single crystal film of the organic semiconductor material.
  • the gate insulating film constituting the TFT in this embodiment can be formed using a known material.
  • As the gate insulating film for example, PECVD method, and a SiO 2 or polysilicon film formed by the LPCVD method or the like insulating film made of SiO 2 or the like obtained by thermal oxidation.
  • the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT in this embodiment can be formed using a known material.
  • the material of the signal electrode line, the scan electrode line, the common electrode line, the first drive electrode, and the second drive electrode include tantalum (Ta), aluminum (Al), copper (Cu), and the like.
  • the TFT of the organic EL element substrate 210 can be configured as described above, but the present embodiment is not limited to these materials, structures, and formation methods.
  • the interlayer insulating film that can be used in the active drive organic EL display device and the organic EL display device can be formed using a known material.
  • a material of the interlayer insulating film for example, inorganic materials such as silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O 5 ), acrylic resin, resist material Organic materials, etc. are mentioned.
  • Examples of the method for forming the interlayer insulating film include a dry process such as a chemical vapor deposition (CVD) method and a vacuum deposition method, and a wet process such as a spin coating method. If necessary, the interlayer insulating film can be patterned by a photolithography method or the like.
  • the organic EL element 212 When light emitted from the organic EL element 212 is extracted from the side opposite to the substrate 211 (second electrode 215 side), external light is incident on the TFT formed on the one surface 211a of the substrate 211, and the characteristics of the TFT. In order to prevent the change from occurring, it is preferable to form a light-shielding insulating film having light-shielding properties. Further, the interlayer insulating film and the light-shielding insulating film can be used in combination.
  • Examples of the material of the light-shielding insulating film include, for example, pigments or dyes such as phthalocyanine and quinaclonone dispersed in a polymer resin such as polyimide, color resists, black matrix materials, and inorganic insulating materials such as Ni x Zn y Fe 2 O 4 Although materials etc. are mentioned, this embodiment is not limited to these materials and a formation method.
  • the active drive type organic EL display device when a TFT or the like is formed on one surface 211a of the substrate 211, an unevenness is formed on the surface, and this unevenness causes a defect in the organic EL element 212 (for example, a pixel electrode defect). There is a risk that a defect of the organic EL layer, a disconnection of the second electrode, a short circuit between the first electrode and the second electrode, a decrease in breakdown voltage, or the like) may occur.
  • a planarizing film may be provided on the interlayer insulating film.
  • planarization film can be formed using a known material.
  • the material for the planarizing film include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material.
  • the method for forming the planarization film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method.
  • the present embodiment is limited to these materials and the formation method. is not.
  • the planarization film may have either a single layer structure or a multilayer structure.
  • the first electrode 213 and the second electrode 215 function as a pair as an anode or a cathode of the organic EL element 212. That is, when the first electrode 213 is an anode, the second electrode 215 is a cathode, and when the first electrode 213 is a cathode, the second electrode 215 is an anode.
  • an electrode material for forming the first electrode 213 and the second electrode 215 a known electrode material can be used.
  • an electrode material for forming the anode gold (Au), platinum (Pt), nickel (Ni) or the like having a work function of 4.5 eV or more from the viewpoint of more efficiently injecting holes into the organic EL layer 214.
  • Metal oxide (ITO) composed of indium (In) and tin (Sn), oxide (SnO 2 ) of tin (Sn), oxide (IZO) composed of indium (In) and zinc (Zn) Transparent electrode materials and the like.
  • lithium (Li), calcium (Ca), cerium (Ce) having a work function of 4.5 eV or less from the viewpoint of more efficiently injecting electrons into the organic EL layer 214.
  • metals such as barium (Ba) and aluminum (Al), or alloys such as Mg: Ag alloys and Li: Al alloys containing these metals.
  • the first electrode 213 and the second electrode 215 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above-described materials. Is not limited to these forming methods. Moreover, the electrode formed by the photolithographic method and the laser peeling method can also be patterned as needed, and the electrode patterned directly by combining with a shadow mask can also be formed.
  • the film thicknesses of the first electrode 213 and the second electrode 215 are preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance increases and the drive voltage may increase.
  • a translucent electrode As the first electrode 213 or the second electrode 215.
  • a material for the semitransparent electrode a metal semitransparent electrode alone or a combination of a metal translucent electrode and a transparent electrode material can be used.
  • silver is preferable from the viewpoint of reflectance and transmittance.
  • the film thickness of the translucent electrode is preferably 5 to 30 nm.
  • the film thickness of the translucent electrode is less than 5 nm, the light cannot be sufficiently reflected, and the interference effect cannot be obtained sufficiently.
  • the film thickness of the translucent electrode exceeds 30 nm, the light transmittance is rapidly decreased, so that the luminance and light emission efficiency of the display device may be decreased.
  • the electrode having high reflectivity include a reflective metal electrode (reflective electrode) made of, for example, aluminum, silver, gold, aluminum-lithium alloy, aluminum-neodymium alloy, aluminum-silicon alloy, and the like. The electrode etc. which combined are mentioned.
  • the charge injection / transport layer is a charge injection layer (hole injection layer 216, electron injection layer 221) for the purpose of more efficiently injecting charges (holes, electrons) from the electrode and transporting (injection) to the light emitting layer.
  • a charge transport layer (hole transport layer 217, electron transport layer 220), and may be composed only of the charge injection transport material exemplified below, and optionally includes additives (donor, acceptor, etc.).
  • a structure in which these materials are dispersed in a polymer material (binding resin) or an inorganic material may be used.
  • charge injecting and transporting material known charge injecting and transporting materials for organic EL elements and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but this embodiment is not limited to these materials. .
  • oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), and inorganic p-type semiconductor materials are used.
  • a porphyrin compound N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N ′ -Diphenyl-benzidine ( ⁇ -NPD), 4,4 ', 4 "-tris (carbazol-9-yl) triphenylamine (TCTA), N, N-dicarbazolyl-3,5-benzene (m-CP), 4,4 ′-(cyclohexane-1,1-diyl) bis (N, N-di-p-tolylaniline) (TAPC), 2,2′-bis (N, N-diphenylamine) -9,9′- Spirofluorene (DPA S), N1, N1 ′-(biphenyl-4,4′-diyl) bis (N1-phenyl-N4, N4-di-m-tolylbenzene-1
  • the energy level of the highest occupied molecular orbital (HOMO) is higher than that of the material of the hole transport layer 217 from the viewpoint of more efficiently injecting and transporting holes from the anode. It is preferable to use a low material.
  • a material for the hole transport layer 217 a material having higher hole mobility than the material for the hole injection layer 216 is preferably used.
  • the hole injection layer 216 and the hole transport layer 217 may optionally contain an additive (donor, acceptor, etc.).
  • the hole injection layer 216 and the hole transport layer 217 preferably include an acceptor.
  • the acceptor a known acceptor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • the acceptor may be either an inorganic material or an organic material.
  • the inorganic material include gold (Au), platinum (Pt), tungsten (W), iridium (Ir), phosphorus oxychloride (POCl 3 ), hexafluoroarsenate ion (AsF 6 ⁇ ), chlorine (Cl), Examples include bromine (Br), iodine (I), vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and the like.
  • organic materials include 7,7,8,8, -tetracyanoquinodimethane (TCNQ), tetrafluorotetracyanoquinodimethane (TCNQF 4 ), tetracyanoethylene (TCNE), hexacyanobutadiene (HCNB), and dicyclohexane.
  • Compounds having a cyano group such as dicyanobenzoquinone (DDQ); compounds having a nitro group such as trinitrofluorenone (TNF) and dinitrofluorenone (DNF); fluoranil; chloranil; bromanyl and the like.
  • compounds having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB, and DDQ are preferable because the effect of increasing the hole concentration is higher.
  • a low molecular material an inorganic material that is an n-type semiconductor; 1,3-bis [2- (2,2′-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] benzene (Bpy-OXD), 1,3-bis (5- (4- (tert-butyl) phenyl) Oxadiazole derivatives such as -1,3,4-oxadiazol-2-yl) benzene (OXD7); 3- (4-biphenyl) -4-phenyl-5-tert-butylphenyl-1,2,4 -Triazole derivatives such as triazole (TAZ); thiopyrazine dioxide derivative; benzoquinone derivative; naphthoquinone derivative; anthraquinone derivative; diphenoquinone derivative; fluorenone derivative
  • a material having a higher energy level of the lowest unoccupied molecular orbital (LUMO) than that of the material of the electron transport layer 220 is used from the viewpoint of more efficiently injecting and transporting electrons from the cathode. Is preferred.
  • a material for the electron transport layer 220 a material having higher electron mobility than the material for the electron injection layer 221 is preferably used.
  • the electron transport layer 220 and the electron injection layer 221 may optionally contain an additive (donor, acceptor, etc.).
  • the electron transport layer 220 and the electron injection layer 221 preferably include a donor.
  • a donor the well-known donor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
  • the donor may be either an inorganic material or an organic material.
  • the inorganic material include alkali metals such as lithium, sodium and potassium; alkaline earth metals such as magnesium and calcium; rare earth elements; aluminum (Al); silver (Ag); copper (Cu); It is done.
  • organic material examples include a compound having an aromatic tertiary amine skeleton, a condensed polycyclic compound which may have a substituent such as phenanthrene, pyrene, perylene, anthracene, tetracene and pentacene, tetrathiafulvalene (TTF), Examples include dibenzofuran, phenothiazine, and carbazole.
  • Compounds having an aromatic tertiary amine skeleton include anilines; phenylenediamines; N, N, N ′, N′-tetraphenylbenzidine, N, N′-bis- (3-methylphenyl) -N, N Benzidines such as' -bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine; triphenylamine, 4,4'4 "-tris ( N, N-diphenyl-amino) -triphenylamine, 4,4'4 "-tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine, 4,4'4" -tris (N Triphenylamines such as-(1-naphthyl) -N-phenyl-amino) -triphenylamine; N, N'-di- (4-methyl-
  • the above-mentioned condensed polycyclic compound “has a substituent” means that one or more hydrogen atoms in the condensed polycyclic compound are substituted with a group other than a hydrogen atom (substituent).
  • the number of is not particularly limited, and all hydrogen atoms may be substituted with a substituent.
  • the position of the substituent is not particularly limited. Examples of the substituent include an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyloxy group having 2 to 10 carbon atoms, and an aryl group having 6 to 15 carbon atoms. An aryloxy group having 6 to 15 carbon atoms, a hydroxyl group, a halogen atom, and the like.
  • the alkyl group may be linear, branched or cyclic.
  • Examples of the linear or branched alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, and n-pentyl group.
  • the cyclic alkyl group may be monocyclic or polycyclic, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, norbornyl group, isobornyl Group, 1-adamantyl group, 2-adamantyl group, tricyclodecyl group and the like.
  • Examples of the alkoxy group include a monovalent group in which an alkyl group is bonded to an oxygen atom.
  • Examples of the alkenyl group include an alkyl group having 2 to 10 carbon atoms in which one single bond (C—C) between carbon atoms is substituted with a double bond (C ⁇ C).
  • Examples of the alkenyloxy group include a monovalent group in which the alkenyl group is bonded to an oxygen atom.
  • the aryl group may be monocyclic or polycyclic, and the number of ring members is not particularly limited, and preferred examples include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, and the like.
  • Examples of the aryloxy group include a monovalent group in which an aryl group is bonded to an oxygen atom.
  • Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
  • a compound having an aromatic tertiary amine skeleton, a condensed polycyclic compound which may have a substituent, and an alkali metal are preferable because the effect of increasing the electron concentration is higher.
  • the light-emitting layer 218 may be composed only of the organic light-emitting material exemplified below, or may be composed of a combination of a light-emitting dopant and a host material, and optionally includes a hole transport material, an electron transport material, and an addition An agent (donor, acceptor, etc.) may be included. Moreover, the structure by which these each material was disperse
  • organic light emitting material a known light emitting material for an organic EL element can be used.
  • Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials.
  • an aromatic dimethylidene compound such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi); Oxadiazole compounds such as 2- [2- [4- (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole; 3- (4-biphenyl) -4-phenyl-5-t-butyl Triazole derivatives such as phenyl-1,2,4-triazole (TAZ); styrylbenzene compounds such as 1,4-bis (2-methylstyryl) benzene; thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, Fluorescent organic materials such as diphenoquinone derivatives and fluorenone derivatives; azomethine zinc complexes, (8- Rokishi
  • Polymer light-emitting materials used for the light-emitting layer 218 include poly (2-decyloxy-1,4-phenylene) (DO-PPP), poly [2,5-bis- [2- (N, N, N-triethyl).
  • the organic light emitting material is preferably a low molecular light emitting material, and a phosphorescent material having high light emission efficiency is preferably used from the viewpoint of reducing power consumption.
  • a well-known dopant for organic EL elements can be used.
  • the dopant in the case of an ultraviolet light emitting material, p-quaterphenyl, 3,5,3,5-tetra-tert-butylsecphenyl, 3,5,3,5-tetra-tert-butyl-p- Examples thereof include fluorescent light emitting materials such as quinckphenyl.
  • a fluorescent light emitting material such as a styryl derivative; bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6 And phosphorescent organic metal complexes such as' -difluorophenylpolydinato) tetrakis (1-pyrazoyl) borate iridium (III) (FIr6).
  • the green light emitting material include phosphorescent organic metal complexes such as tris (2-phenylpyridinate) iridium (Ir (ppy) 3 ).
  • each layer which comprises the organic EL layer 214 was demonstrated, for example, a host material can also be used as a hole transport material or an electron transport material, and a hole transport material and an electron transport material can also be used as a host material.
  • a known wet process, dry process, and laser transfer method are used. Etc. are used.
  • a coating method such as a spin coating method, a dipping method, a doctor blade method, a discharge coating method, a spray coating method, or the like using a liquid in which a material constituting each layer is dissolved or dispersed in a solvent; an inkjet method; Examples thereof include a printing method such as a relief printing method, an intaglio printing method, a screen printing method, and a micro gravure coating method.
  • the liquid used in the above coating method and printing method may contain additives for adjusting the physical properties of the liquid, such as a leveling agent and a viscosity modifier.
  • a resistance heating vapor deposition method As the dry process, a resistance heating vapor deposition method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor phase vapor deposition (OVPD) method, or the like, using the material constituting each of the above layers is used. It is done.
  • the thickness of each of the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221 is usually about 1 to 1000 nm, but 10 to 200 nm. Is preferred. If the film thickness is less than 10 nm, the properties (charge injection characteristics, transport characteristics, confinement characteristics) that are originally required cannot be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, when the film thickness exceeds 200 nm, the driving voltage increases due to the resistance component of the organic EL layer 214, resulting in
  • the edge cover 222 can be formed by using an insulating material by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, or the like by a known dry method or a wet photolithography method. Patterning can be performed, but the present embodiment is not limited to these forming methods.
  • a known material is used as the insulating material constituting the edge cover 222, but the insulating material is not particularly limited in the present embodiment. Since the edge cover 222 needs to transmit light, examples of the insulating material constituting the edge cover 222 include SiO, SiON, SiN, SiOC, SiC, HfSiON, ZrO, HfO, and LaO.
  • the film thickness of the edge cover 222 is preferably 100 to 2000 nm. If the film thickness is less than 100 nm, the insulating property is not sufficient, and leakage occurs between the first electrode 213 and the second electrode 215, resulting in an increase in power consumption and non-light emission. On the other hand, if the film thickness exceeds 2000 nm, the film forming process takes time, which causes a decrease in production efficiency and causes the second electrode 215 to be disconnected by the edge cover 222.
  • the organic EL element 212 has a microcavity structure (optical microresonator structure) based on an interference effect between the first electrode 213 and the second electrode 215, or a microcavity structure (optical microresonator structure) based on a dielectric multilayer film. ).
  • the organic EL layer 214 emits light in the front direction (light extraction direction) due to the interference effect between the first electrode 213 and the second electrode 215. It can be condensed.
  • the light emission of the organic EL layer 214 can have directivity, the light emission loss escaping to the surroundings can be reduced, and the light emission efficiency can be increased. Thereby, it is possible to more efficiently propagate the light emission energy generated in the organic EL layer 214 to the phosphor layer, and the front luminance of the display device can be increased.
  • the emission spectrum of the organic EL layer 214 can be adjusted, and the desired emission peak wavelength and half width can be adjusted. Thereby, it is possible to control the red phosphor and the green phosphor to a spectrum that can be excited more effectively, and the color purity of the blue pixel can be improved.
  • the display device of this embodiment is electrically connected to an external drive circuit (scanning line electrode circuit, data signal electrode circuit, power supply circuit).
  • an external drive circuit scanning line electrode circuit, data signal electrode circuit, power supply circuit.
  • the substrate 211 constituting the organic EL element substrate 210 a substrate coated with an insulating material on a glass substrate, more preferably a metal substrate or a substrate coated with an insulating material on a plastic substrate, more preferably a metal substrate.
  • a substrate obtained by coating an insulating material on an upper or plastic substrate is used.
  • the display device of this embodiment may be driven by directly connecting the organic EL element substrate 210 to an external circuit, or a switching circuit such as a TFT is disposed in a pixel, and wiring connected to the TFT or the like
  • An external drive circuit (scanning line electrode circuit (source driver), data signal electrode circuit (gate driver), power supply circuit) for driving the organic EL element substrate 210 may be electrically connected.
  • a color filter between the phosphor substrate and the organic EL element substrate 210.
  • a conventional color filter can be used as the color filter.
  • the color filter by providing the color filter, the color purity of the red pixel, the green pixel, and the blue pixel can be increased, and the color reproduction range of the display device can be expanded.
  • the blue color filter formed on the blue phosphor layer, the green color filter formed on the green phosphor layer, and the red color filter formed on the red phosphor layer include excitation light contained in external light. Since the component is absorbed, light emission of the phosphor layer due to external light can be reduced or prevented, and a reduction in contrast can be reduced or prevented.
  • the blue color filter formed on the blue phosphor layer, the green color filter formed on the green phosphor layer, and the red color filter formed on the red phosphor layer are not absorbed by the phosphor layer, Since the excitation light to be transmitted can be prevented from leaking to the outside, it is possible to prevent the color purity of the display from being deteriorated due to a mixture of light emitted from the phosphor layer and excitation light.
  • the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced.
  • a display device can be realized.
  • FIG. 20 is a schematic sectional view showing an LED element substrate constituting a display device according to a second embodiment.
  • the display device of this embodiment includes a phosphor substrate comprising a substrate on which a phosphor layer, a light distribution adjusting layer, a barrier, a light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above.
  • the LED substrate (light source) 230 is bonded to the phosphor substrate via a flattening film or the like.
  • the LED substrate 230 includes a substrate 231, a first buffer layer 232, an n-type contact layer 233, a second n-type cladding layer 234, and a first n-type cladding that are sequentially stacked on one surface 211 a of the substrate 211.
  • a layer 235, an active layer 236, a first p-type cladding layer 237, a second p-type cladding layer 238, a second buffer layer 239, a cathode 240 formed on the n-type contact layer 233, and a second An anode 241 formed on the buffer layer 239 is schematically configured.
  • LED other well-known LED, for example, ultraviolet light emission inorganic LED, blue light emission inorganic LED, etc. can be used, However, A specific structure is not limited to said thing.
  • the active layer 236 is a layer that emits light by recombination of electrons and holes, and a known active layer material for LED can be used as the active layer material.
  • a known active layer material for LED can be used as the active layer material.
  • an active layer material for example, as an ultraviolet active layer material, AlGaN, InAlN, In a Al b Ga 1-ab N (0 ⁇ a, 0 ⁇ b, a + b ⁇ 1), blue active layer material Examples thereof include In z Ga 1-z N (0 ⁇ z ⁇ 1), but the present embodiment is not limited to these.
  • the active layer 236 has a single quantum well structure or a multiple quantum well structure.
  • the active layer of the quantum well structure may be either n-type or p-type. However, when it is a non-doped (no impurity added) active layer, the half-value width of the emission wavelength is narrowed due to interband emission, and light emission with good color purity is achieved. Since it is obtained, it is preferable.
  • the active layer 236 may be doped with at least one of a donor impurity and an acceptor impurity. If the crystallinity of the active layer doped with the impurity is the same as that of the non-doped layer, the emission intensity between bands can be further increased by doping the donor impurity as compared with the non-doped layer.
  • the acceptor impurity is doped, the peak wavelength can be shifted to the lower energy side by about 0.5 eV from the peak wavelength of interband light emission, but the full width at half maximum is widened.
  • the light emission intensity can be further increased as compared with the light emission intensity of the active layer doped only with the acceptor impurity.
  • the conductivity type of the active layer is preferably doped with a donor impurity such as Si to be n-type.
  • the second n-type cladding layer 234 and the first n-type cladding layer 235 a known n-type cladding layer material for LED can be used, and a single layer or a multilayer structure may be used.
  • the second n-type cladding layer 234 and the first n-type cladding layer 235 are formed of an n-type semiconductor having a band gap energy larger than that of the active layer 236, the second n-type cladding layer 234 and the first n-type cladding layer 234 are formed.
  • a potential barrier against holes is formed between the mold cladding layer 235 and the active layer 236, and holes can be confined in the active layer 236.
  • the second n-type cladding layer 234 and the first n-type cladding layer 235 can be formed from n-type In x Ga 1-x N (0 ⁇ x ⁇ 1). Is not limited to these.
  • the first p-type cladding layer 237 and the second p-type cladding layer 2308 a known p-type cladding layer material for LED can be used, and a single layer or a multilayer structure may be used.
  • the first p-type cladding layer 237 and the second p-type cladding layer 238 are formed of a p-type semiconductor having a band gap energy larger than that of the active layer 236, the first p-type cladding layer 237 and the second p-type cladding layer 238 are used.
  • a potential barrier against electrons is formed between the mold cladding layer 238 and the active layer 236, and the electrons can be confined in the active layer 236.
  • the first p-type cladding layer 237 and the second p-type cladding layer 238 can be formed from Al y Ga 1-y N (0 ⁇ y ⁇ 1). It is not limited to.
  • n-type contact layer 233 a known contact layer material for LED can be used.
  • a layer for forming an electrode in contact with the second n-type clad layer 234 and the first n-type clad layer 235 An n-type contact layer 233 made of n-type GaN can be formed. It is also possible to form a p-type contact layer made of p-type GaN as a layer for forming an electrode in contact with the first p-type cladding layer 237 and the second p-type cladding layer 238.
  • this p-type contact layer is not particularly required to be formed if the second n-type cladding layer 234 and the second p-type cladding layer 238 are formed of GaN.
  • the n-type cladding layer 234 and the second p-type cladding layer 238) may be used as contact layers.
  • a known film forming process for LEDs can be used, but the present embodiment is not particularly limited thereto.
  • a vapor phase growth method such as MOVPE (metal organic vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), HDVPE (hydride vapor phase epitaxy), for example, sapphire (C plane, A plane, R plane), SiC (including 6H—SiC, 4H—SiC), spinel (MgAl 2 O 4 , especially its (111) plane), ZnO, Si, GaAs, or other oxide single crystal substrates ( It is possible to form on a substrate such as NGO.
  • MOVPE metal organic vapor phase epitaxy
  • MBE molecular beam vapor phase epitaxy
  • HDVPE hydrogen vapor phase epitaxy
  • sapphire C plane, A plane, R plane
  • SiC including 6H—SiC, 4H—SiC
  • spinel MgAl 2 O 4 , especially its (111) plane
  • the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced.
  • a display device can be realized.
  • FIG. 21 is a schematic sectional view showing an inorganic EL element substrate constituting a display device according to a third embodiment.
  • the display device of this embodiment includes a phosphor substrate comprising a substrate on which a phosphor layer, a light distribution adjustment layer, a barrier, a light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. And an inorganic EL element substrate (light source) 250 bonded on a phosphor substrate via a planarizing film or the like.
  • the inorganic EL element substrate 250 is generally composed of a substrate 251 and an inorganic EL element 252 provided on one surface 251a of the substrate 251.
  • the inorganic EL element 252 includes a first electrode 253, a first dielectric layer 254, a light emitting layer 255, a second dielectric layer 256, and a second electrode 257, which are sequentially stacked on one surface 251a of the substrate 251. Yes.
  • the first electrode 253 and the second electrode 257 function as a pair as an anode or a cathode of the inorganic EL element 252.
  • a known inorganic EL element such as an ultraviolet light emitting inorganic EL element or a blue light emitting inorganic EL element can be used, but the specific configuration is not limited to the above. Absent.
  • each structural member which comprises the inorganic EL element substrate 250, and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
  • the same substrate as the substrate 211 constituting the organic EL element substrate 210 described above is used.
  • the first electrode 253 and the second electrode 257 function as a pair as an anode or a cathode of the inorganic EL element 252. That is, when the first electrode 253 is an anode, the second electrode 257 is a cathode, and when the first electrode 253 is a cathode, the second electrode 257 is an anode.
  • a metal such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), and an oxide made of indium (In) and tin (Sn) (ITO), tin (Sn) oxide (SnO 2 ), oxide (IZO) made of indium (In) and zinc (Zn), and the like can be cited as transparent electrode materials. It is not limited.
  • a transparent electrode such as ITO is good for the electrode on the light extraction side, and a reflective electrode made of aluminum or the like is preferably used for the electrode on the opposite side to the light extraction direction.
  • the first electrode 253 and the second electrode 257 can be formed by using a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials. Is not limited to these forming methods. Moreover, the electrode formed by the photolithographic method and the laser peeling method can also be patterned as needed, and the patterned electrode can also be formed by combining with a shadow mask.
  • the film thicknesses of the first electrode 253 and the second electrode 257 are preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance increases and the drive voltage may increase.
  • a known dielectric material for inorganic EL elements can be used as the first dielectric layer 254 and the second dielectric layer 256.
  • a known dielectric material for inorganic EL elements include tantalum pentoxide (Ta 2 O 5 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum titanate ( Examples include AlTiO 3 ), barium titanate (BaTiO 3 ), and strontium titanate (SrTiO 3 ).
  • the present embodiment is not limited to these dielectric materials.
  • first dielectric layer 254 and the second dielectric layer 256 may have a single layer structure made of one type selected from the above dielectric materials, or may have a multilayer structure in which two or more types are stacked. Also good.
  • the film thicknesses of the first dielectric layer 254 and the second dielectric layer 256 are preferably about 200 to 500 nm.
  • the light-emitting layer 255 a known light-emitting material for inorganic EL elements can be used.
  • a light emitting material for example, ZnF 2 : Gd as an ultraviolet light emitting material, BaAl 2 S 4 : Eu, CaAl 2 S 4 : Eu, ZnAl 2 S 4 : Eu, Ba 2 SiS 4 as a blue light emitting material.
  • the thickness of the light emitting layer 255 is preferably about 300 to 1000 nm.
  • the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced.
  • a display device can be realized.
  • the organic EL element substrate is exemplified in the first embodiment
  • the LED substrate is exemplified in the second embodiment
  • the inorganic EL element substrate is exemplified in the third embodiment.
  • the sealing film and the sealing substrate can be formed by a known sealing material and sealing method.
  • the sealing film can be formed by applying a resin on the surface opposite to the substrate constituting the light source by using a spin coat method, an ODF, a laminate method, or the like.
  • resin is further added using spin coating, ODF, lamination, etc.
  • a sealing film can be formed by coating, or a sealing substrate can be attached.
  • Such a sealing film or a sealing substrate can prevent entry of oxygen and moisture from the outside into the light-emitting element, thereby improving the life of the light source.
  • it can also be made to adhere
  • a method of sealing an inert gas such as nitrogen gas or argon gas with a glass plate, a metal plate, or the like can be given.
  • a hygroscopic agent such as barium oxide in the enclosed inert gas because deterioration of the organic EL element due to moisture can be more effectively reduced.
  • this embodiment is not limited to these members and forming methods.
  • when light is extracted from the side opposite to the substrate, it is necessary to use a light-transmitting material for both the sealing film and the sealing substrate.
  • FIG. 22 is a schematic sectional view showing a display device according to a fourth embodiment. 22, the same components as those of the light emitting device 30 illustrated in FIG. 3 and the organic EL element substrate 210 illustrated in FIG. 19 are denoted by the same reference numerals, and description thereof is omitted.
  • the display device 260 of the present embodiment has the same configuration as the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. It is schematically composed of a phosphor substrate 261 and an active matrix driving type organic EL element substrate (light source) 262 bonded on the phosphor substrate 261 via a planarizing film.
  • an active matrix driving method using TFTs is used as means for switching whether to irradiate each of the red pixel PR, the green pixel PG, and the blue pixel PB.
  • the blue pixel PB has a light scattering layer 263 that scatters blue light.
  • FIG. 23 is a schematic configuration diagram illustrating a display device including an organic EL element substrate.
  • the organic EL element substrate 262 has a TFT 264 formed on one surface 211 a of the substrate 211. That is, the gate electrode 265 and the gate line 266 are formed on one surface 211a of the substrate 211, and the gate insulating film 267 is formed on the one surface 211a of the substrate 211 so as to cover the gate electrode 265 and the gate line 266.
  • An active layer (not shown) is formed on the gate insulating film 267.
  • a source electrode 268, a drain electrode 269, and a data line 270 are formed on the active layer, and covers the source electrode 268, the drain electrode 269, and the data line 270.
  • the planarizing film 271 is formed.
  • planarization film 271 does not have to have a single layer structure, and may have a structure in which another interlayer insulating film and a planarization film are combined. Further, a contact hole 272 that penetrates the planarization film 271 or the interlayer insulating film and reaches the drain electrode 269 is formed, and the organic EL that is electrically connected to the drain electrode 269 via the contact hole 272 on the planarization film 271. A first electrode 213 of the element 212 is formed. The configuration of the organic EL element 212 is the same as that in the first embodiment.
  • the TFT 264 is formed in advance on one surface 211a of the substrate 211 before forming the organic EL element 212, and functions as a pixel switching element and an organic EL element driving element.
  • the TFT 264 includes a known TFT, and can be formed using a known material, structure, and formation method. In this embodiment, a metal-insulator-metal (MIM) diode can be used instead of the TFT 264.
  • MIM metal-insulator-metal
  • the material of the active layer constituting the TFT 264 the same material as in the first embodiment described above is used.
  • a method for forming the active layer constituting the TFT 264 the same method as in the first embodiment described above is used.
  • the gate insulating film 267 included in the TFT 264 can be formed using a known material.
  • As the gate insulating film 267 for example, PECVD method, SiO 2 or the like to the SiO 2 or polysilicon film formed by the LPCVD method or the like obtained by thermal oxidation.
  • the data line 270, the gate line 266, the source electrode 268, and the drain electrode 269 included in the TFT 264 can be formed using a known conductive material. Examples of the material of the data line 270, the gate line 266, the source electrode 268, and the drain electrode 269 include tantalum (Ta), aluminum (Al), copper (Cu), and the like.
  • the TFT 264 can be configured as described above, but the present embodiment is not limited to these materials, structures, and formation methods.
  • Examples of the interlayer insulating film used in the present embodiment are the same as those in the first embodiment described above.
  • a method for forming the interlayer insulating film the same method as in the first embodiment described above can be used.
  • the TFT 264 When light emitted from the organic EL element 212 is extracted from the side opposite to the substrate 211 (second electrode 215 side), external light is incident on the TFT 264 formed on one surface 211a of the substrate 211, and the TFT 264 is electrically connected. It is preferable to use a light-shielding insulating film having a light-shielding property for the purpose of preventing changes in the mechanical characteristics.
  • the interlayer insulating film and the light-shielding insulating film can be used in combination. Examples of the material for the light-shielding insulating film include the same materials as those in the first embodiment described above.
  • the planarization film 271 can be formed using a known material. Examples of the material for the planarizing film 271 include the same materials as those in the first embodiment described above. Further, the planarization film 271 may have either a single layer structure or a multilayer structure.
  • a sealing film 273 for sealing the organic EL element 212 is provided on the surface of the organic EL element 212 (surface facing the phosphor substrate 261).
  • the display device 260 includes a pixel portion 273, a gate signal side drive circuit 274, a data signal side drive circuit 275, a signal wiring 276, and a current supply line 277 formed on the organic EL element substrate 262. And a flexible printed wiring board (hereinafter sometimes abbreviated as “FPC”) 278 connected to the organic EL element substrate 262 and an external drive circuit 290.
  • FPC flexible printed wiring board
  • the organic EL element substrate 262 is electrically connected via an FPC 279 to an external drive circuit 290 including a scanning line electrode circuit, a data signal electrode circuit, a power supply circuit and the like for driving the organic EL element 212.
  • a switching circuit such as a TFT 264 is disposed in the pixel portion 274, and a data signal side driving circuit for driving the organic EL element 212 to a wiring such as a data line 270 and a gate line 266 to which the TFT 264 is connected. 276 and a gate signal side driving circuit 275 are connected to each other, and an external driving circuit 290 is connected to these driving circuits via a signal wiring 267.
  • a plurality of gate lines 266 and a plurality of data lines 270 are disposed, and a TFT 264 is disposed at an intersection of the gate lines 266 and the data lines 270.
  • the organic EL element 212 is driven by a voltage-driven digital gradation method, and two TFTs, a switching TFT and a driving TFT, are arranged for each pixel.
  • the driving TFT and the first electrode 213 of the organic EL element 212 Are electrically connected through a contact hole 272 formed in the planarizing film 271.
  • a capacitor (not shown) for setting the gate potential of the driving TFT to a constant potential is arranged in one pixel so as to be connected to the gate electrode of the driving TFT.
  • the present embodiment is not particularly limited to these, and the driving method may be the voltage driving digital gradation method described above or the current driving analog gradation method.
  • the number of TFTs is not particularly limited, and the organic EL element 212 may be driven by the two TFTs described above.
  • the organic EL element 212 may be driven using two or more TFTs each having a built-in compensation circuit in the pixel.
  • the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced.
  • a display device can be realized.
  • the active matrix driving type organic EL element substrate 262 since the active matrix driving type organic EL element substrate 262 is employed, a display device with excellent display quality can be realized.
  • the light emission time of the organic EL element 212 can be extended as compared with passive driving, and the driving current for obtaining desired luminance can be reduced, so that power consumption can be reduced.
  • the light emitting region can be expanded regardless of the formation region of the TFT, various wirings, etc., and the aperture ratio of the pixel Can be increased.
  • FIG. 24 is a schematic cross-sectional view showing a display device according to a fifth embodiment. 24, the same components as those of the light emitting device 30 shown in FIG. 3, the organic EL element substrate 210 shown in FIG. 19, and the display device 260 shown in FIG. To do.
  • the display device 300 of the present embodiment has the same configuration as that of the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above.
  • a fluorescent substrate 301, an organic EL element substrate (light source) 302, and a liquid crystal element 303 are roughly configured.
  • the organic EL element 212 constituting the organic EL element substrate 302 is not divided for each pixel and functions as a planar light source common to all the pixels. Further, the liquid crystal element 303 is configured to be able to control the voltage applied to the liquid crystal layer for each pixel using a pair of electrodes, and to control the transmittance of light emitted from the entire surface of the organic EL element 212 for each pixel. . In other words, the liquid crystal element 303 has a function as an optical shutter that selectively transmits light from the organic EL element substrate 302 for each pixel.
  • the liquid crystal element 303 includes, for example, a pair of polarizing plates 311 and 312, transparent electrodes 313 and 314, alignment films 315 and 316, and a substrate 317, and a liquid crystal 318 is sandwiched between the alignment films 315 and 316. It has a structure.
  • an optically anisotropic layer is provided between the liquid crystal cell and one of the polarizing plates 311 and 312, or an optical difference is provided between both the liquid crystal cell and the polarizing plates 311 and 312.
  • An isotropic layer may be provided.
  • a polarizing plate is preferably provided on the light extraction side.
  • the polarizing plates 311 and 312 a combination of a conventional linear polarizing plate and a ⁇ / 4 plate can be used. By providing the polarizing plates 311 and 312, reflection of external light from the electrodes of the display device 300 and reflection of external light on the surface of the substrate or the sealing substrate can be prevented, and the contrast of the display device 300 can be improved. it can. In addition, as the polarizing plates 311 and 312, those having an extinction ratio of 10,000 or more at wavelengths of 435 nm or more and 480 nm or less are suitably used.
  • the type of liquid crystal cell is not particularly limited, and can be appropriately selected according to the purpose.
  • Examples of the liquid crystal cell include TN mode, VA mode, OCB mode, IPS mode, ECB mode, and the like.
  • the liquid crystal element 303 may be passively driven or may be actively driven using a switching element such as a TFT.
  • the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced.
  • a display device can be realized. Further, in the present embodiment, power consumption can be further reduced by combining pixel switching by the liquid crystal element 303 and the organic EL element substrate 302 that functions as a planar light source.
  • FIG. 25 is a schematic cross-sectional view showing a sixth embodiment of the display device according to the present invention.
  • 25 the same components as those of the light-emitting device 30 illustrated in FIG. 3 and the liquid crystal element 303 illustrated in FIG. 24 are denoted by the same reference numerals, and description thereof is omitted.
  • the display device 400 of this embodiment has the same configuration as the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above.
  • a fluorescent substrate 301, a liquid crystal element 303, and a backlight unit 401 are roughly configured.
  • the backlight unit 401 has a light source disposed on the bottom surface or side surface of the backlight unit 401.
  • the backlight unit 401 includes, for example, a reflection sheet, a light source, a light guide plate, a first diffusion sheet, a prism sheet, and a second diffusion sheet.
  • a brightness enhancement film may be disposed between the backlight unit 401 and the backlight side polarizing plate 311.
  • the backlight unit 401 As the backlight unit 401, the light source 402 disposed on the side surface of the backlight unit 401, the light guide plate 403 that guides light from the light source 402 in the surface direction of the liquid crystal element 303, and the liquid crystal from the light guide plate 403 to the liquid crystal What was roughly comprised from the brightness enhancement film 404 which injects light into the element 303 efficiently was illustrated.
  • an excellent display device that does not change brightness when viewed from any direction, does not change color when viewed from any direction, and is capable of reducing power consumption. realizable. Further, in the present embodiment, power consumption can be further reduced by combining pixel switching by the liquid crystal element 303 and the backlight unit 401 that functions as a planar light source.
  • the display devices of the first to fifth embodiments described above can be applied to, for example, the mobile phone shown in FIG.
  • the cellular phone 310 includes a main body 311, a display unit 312, an audio input unit 313, an audio output unit 314, an antenna 315, an operation switch 316, and the like.
  • the display unit 312 the display devices of the first to fifth embodiments described above can be suitably applied.
  • a high-luminance video can be displayed with low power consumption.
  • the display devices of the first to fifth embodiments described above can be applied to, for example, a thin television shown in FIG.
  • the thin television 320 includes a main body cabinet 321, a display unit 322, speakers 323, a stand 324, and the like.
  • the display unit 322 the display devices of the first to fifth embodiments described above can be suitably applied.
  • FIG. 28 is a schematic sectional view showing a lighting device according to the first embodiment.
  • the illumination device 330 of this embodiment includes an optical film 331, a phosphor substrate 332, an organic EL element 333, a thermal diffusion sheet 334, a sealing substrate 335, a sealing resin 336, a heat dissipation material 337, and a drive.
  • a circuit 338, a wiring 339, and a hook ceiling 340 are roughly configured.
  • the organic EL element 333 is generally composed of an anode 341, an organic EL layer 342, and a cathode 343.
  • the light distribution adjustment layer in the phosphor substrate 322 may be formed between the substrate and the optical film or on the optical film.
  • the phosphor substrate 332 is the same as the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. Therefore, according to the display device of this embodiment, the brightness does not change even when viewed from any direction, and further, an excellent illumination device capable of reducing power consumption Can be realized.
  • FIG. 29 is a schematic sectional view showing a lighting device according to a second embodiment.
  • the illuminating device 250 includes a light emitting device 253 that is roughly composed of an excitation light source 281 that emits excitation light and a phosphor substrate 252.
  • the phosphor substrate 252 is formed on the substrate, an excitation light source that emits excitation light, a substrate that is disposed opposite to the excitation light source and on which a phosphor layer that is excited by the excitation light and emits fluorescence is formed.
  • a light distribution adjusting layer that changes the emission direction of fluorescence emitted from at least the phosphor layer, and a light-reflective barrier on at least one side surface of the phosphor layer along a stacking direction with the substrate;
  • the phosphor layer generally includes a wavelength selective transmission / reflection layer formed on an incident surface side on which excitation light is incident.
  • Examples of the excitation light source include those similar to the excitation light source in the first to sixteenth embodiments of the light emitting device described above.
  • Examples of the substrate include the same substrates as those in the first to sixteenth embodiments of the light emitting device described above.
  • Examples of the phosphor layer include those similar to the phosphor layer in the first to sixteenth embodiments of the light emitting device described above.
  • Examples of the barrier include the same barriers as those in the first to sixteenth embodiments of the light emitting device described above.
  • Examples of the light scattering layer include the same light scattering layers as those in the first to sixteenth embodiments of the light emitting device described above.
  • Examples of the wavelength selective transmission / reflection layer include those similar to the wavelength selective transmission / reflection layer in the first to sixteenth embodiments of the light-emitting device described above.
  • the light emission in the illuminating device 250 is demonstrated.
  • the illumination device 250 when excitation light is incident on the phosphor layer from the excitation light source, light is emitted from the phosphor layer isotropically, that is, with equal energy in any direction.
  • the luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle.
  • the viewing angle the angle formed by the surface perpendicular to the light emitting surface and the viewing direction
  • this light enters the light distribution adjustment layer through the substrate, and light is scattered in the light distribution adjustment layer to change the traveling direction of the light.
  • the light path length in the light distribution adjustment layer is longer in the latter case for light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  • a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer.
  • the phosphor layer since the wavelength selective transmission / reflection layer is provided on the incident surface side on which the excitation light is incident in the phosphor layer, the phosphor layer emits light on the side opposite to the light extraction side (back side).
  • the fluorescent component is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer on the incident surface side where the excitation light is incident on the phosphor layer, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  • the prepared green phosphor-forming coating solution was applied onto the substrate using a spinner. Subsequently, it was dried by heating in a vacuum oven (100 ° C., 10 mmHg) for 4 hours to form a green phosphor layer with a film thickness of 2 ⁇ m to obtain a phosphor substrate.
  • a blue directional surface light source (backlight) is used as incident light and light at 460 nm is used as the back surface (film) of the phosphor substrate of the comparative example.
  • the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the substrate side when it was incident from the (surface side) were measured.
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03.
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 1.10. .
  • Example 1 In the same manner as in the comparative example, a green phosphor layer having a thickness of 2 ⁇ m was formed on one surface of the glass substrate.
  • 100 g of a toluene solution in which 10% by weight of PMMA was dissolved was added to 0.1 g of Coumarin 545T, and the mixture was heated and stirred to prepare a coating solution for forming a green phosphor.
  • a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed).
  • a binder for dispersing the light scattering particles Sekisui Plastics Co., Ltd., a resin “LuxPrint 8155” manufactured by Teijin DuPont Co., Ltd. having an average particle size of 4 ⁇ m ) Made techpolymer "SBX-4": 3.59g and Titanium Chemical Industry Co., Ltd.
  • titanium oxide "R-25” 1.27g with an average particle size of 200nm, and after thorough mixing for 30 minutes in an automatic mortar, Using a dispersion stirrer “Filmix 40-40” manufactured by Primix Co., Ltd., the mixture was pre-stirred for 15 minutes at a stirring speed of 6,000 rpm under an open system at room temperature.
  • a 15 ⁇ m thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment formed on the opposite surface.
  • a phosphor substrate of Example 1 consisting of layers was obtained.
  • a blue directional surface light source (backlight) was used as incident light, and light of 460 nm was emitted from the rear surface of the phosphor substrate of Example 1
  • the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer were measured.
  • the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03.
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.85. .
  • Example 2 In the same manner as in Example 1, a green phosphor layer having a thickness of 2 ⁇ m was formed on one surface of the glass substrate.
  • 100 g of a toluene solution in which 10% by weight of PMMA was dissolved was added to 0.1 g of Coumarin 545T, and the mixture was heated and stirred to prepare a coating solution for forming a green phosphor.
  • a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed).
  • a binder for dispersing the light scattering particles Sekisui Plastics Co., Ltd. having an average particle diameter of 4 ⁇ m on Teijin DuPont's resin “LuxPrint 8155”: 30 g.
  • a 5 ⁇ m thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater.
  • heat drying for 15 minutes in a vacuum oven (200 ° C condition) to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one side thereof, and a light distribution adjustment formed on the opposite side.
  • a phosphor substrate of Example 2 consisting of layers was obtained.
  • a blue directional surface light source (backlight) was used as incident light, and light of 460 nm was emitted from the rear surface of the phosphor substrate of Example 2 ( When the light was incident from the phosphor layer side), the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer were measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03.
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle of 60 ° with respect to the luminance value of the viewing angle of 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.82. .
  • Example 3 A barrier was formed on the glass substrate.
  • epoxy resin reffractive index: 1.59
  • acrylic resin reffractive index: 1.49
  • rutile-type titanium oxide reffractive index: 2.71, particle size 250 nm
  • photopolymerization initiator and aromatic
  • a negative photosensitive resist was prepared by stirring and mixing a white photosensitive composition comprising a system solvent.
  • a negative resist was applied on the glass substrate by a spin coater method. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
  • the coating film was irradiated with i-line (300 mJ / cm 2 ) and exposed. Next, development was performed using an alkaline developer to obtain a pixel pattern structure having a barrier. Next, using a hot air circulation drying oven, post-baking was performed at 140 ° C. for 60 minutes to form a barrier partitioning the pixels.
  • a phosphor layer was formed in the opening surrounded by the barrier.
  • a phosphor layer having a thickness of 2 ⁇ m was formed in the opening by a dispenser method using the same phosphor material as in Example 2.
  • a light distribution adjusting layer having a thickness of 5 ⁇ m was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed) using the same light scattering material as in Example 2. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes, a light scattering layer is formed, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment layer formed on the other surface thereof Thus, a phosphor substrate of Example 3 consisting of a barrier formed on the side surface of the phosphor layer was obtained.
  • a blue directional surface light source (backlight) was used as incident light, and light of 460 nm was emitted from the rear surface of the phosphor substrate of Example 1
  • the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer were measured.
  • the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03.
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.86. .
  • Example 4 In the same manner as in Example 3, a barrier layer and a phosphor layer having a thickness of 2 ⁇ m were formed on the opening on the glass substrate.
  • a dielectric multilayer film produced by alternately forming six layers of 1.47) by EB vapor deposition was formed to a thickness of 100 nm by sputtering.
  • a light distribution adjusting layer having a film thickness of 5 ⁇ m was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed) using the same light scattering material as in Example 3.
  • heat drying for 15 minutes in a vacuum oven (200 ° C condition) to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one side thereof, and a light distribution adjustment formed on the opposite side.
  • a phosphor substrate of Example 4 was obtained, comprising a layer, a barrier formed on the side surface of the phosphor layer, and a wavelength selective transmission / reflection layer formed on one surface of the phosphor layer on the excitation light incident surface side.
  • a blue directional surface light source (backlight) is used as incident light, and light of 460 nm is emitted from the rear surface of the phosphor substrate of Example 4 ( When the light was incident from the phosphor layer side), the luminance viewing angle characteristic at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer was measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03.
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.85. .
  • Example 5" A low refractive index layer having a film thickness of 1 ⁇ m was formed on one surface of the same glass substrate as in the comparative example by spin coating.
  • TPIR-414 T-3 As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
  • Example 4 a barrier and a phosphor layer having a thickness of 2 ⁇ m were formed on the opening of the barrier on the low refractive index layer.
  • a low refractive index layer having a thickness of 1 ⁇ m was formed on the entire surface of the phosphor layer by spin coating on the entire surface on the side on which excitation light is incident.
  • a material for the low refractive index layer “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
  • a dielectric multilayer film produced by alternately forming six layers by the method was formed to a thickness of 100 nm by the sputtering method.
  • a light distribution adjusting layer having a film thickness of 5 ⁇ m was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed) using the same light scattering material as in Example 4. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment formed on the opposite surface. Layer, a barrier formed on the side surface of the phosphor layer, a wavelength selective transmission / reflection layer formed on one surface of the phosphor layer on the excitation light incident surface side, and a low refractive index layer formed on both sides of the phosphor layer A phosphor substrate of Example 5 consisting of
  • the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.85. .
  • Example 6 [Blue organic EL + phosphor method]
  • a low refractive index layer having a thickness of 1 ⁇ m was formed on a glass substrate by spin coating.
  • TPIR-414 T-3 manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
  • a barrier light scattering film
  • epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile-type titanium oxide (refractive index: 2.71, particle size 250 nm), photopolymerization initiator and aromatic
  • a negative photosensitive resist was prepared by stirring and mixing a white photosensitive composition comprising a system solvent.
  • a negative resist was applied on the glass substrate by a spin coater method. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
  • the coating film was irradiated with i-line (300 mJ / cm 2 ) and exposed. Next, development was performed using an alkaline developer to obtain a pixel pattern structure having a barrier. Next, using a hot air circulation drying oven, post-baking was performed at 140 ° C. for 60 minutes to form a barrier partitioning the pixels.
  • a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed in the opening surrounded by the barrier.
  • a method for forming the red phosphor layer, the green phosphor layer, and the blue scatterer layer will be described in detail.
  • red phosphor layer In order to form a red phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% polystyrene is dissolved is added to 0.01 g of red phosphor rhodamine 6G, and hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm. was added, and the mixture was heated and stirred to prepare a red phosphor-forming coating solution.
  • the produced red phosphor-forming coating solution was applied in a pattern to regions partitioned by the partition walls by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a red phosphor layer was patterned with a film thickness of 5 ⁇ m.
  • a green phosphor layer To form a green phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% of polystyrene is dissolved is added to 0.01 g of coumarin, and then 40 g of hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm is added. Then, the mixture was heated and stirred to produce a green phosphor forming coating solution. Next, the produced green phosphor forming coating solution was applied in a pattern to the area partitioned by the partition wall 103 by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a green phosphor layer was patterned with a film thickness of 5 ⁇ m.
  • a blue scatterer layer In order to form a blue scatterer layer, first, as a binder for dispersing light scattering particles, a resin “LuxPrint 8155” manufactured by Teijin DuPont Co., Ltd .: 30 g, Sekisui Plastics Co., Ltd. Polymer "SBX-4": 3.59 g and titanium oxide "R-25”: 1.27 g manufactured by Sakai Chemical Industry Co., Ltd. with an average particle size of 200 nm are added and thoroughly mixed for 30 minutes in an automatic mortar.
  • the prepared blue light scattering layer forming coating solution was applied in a pattern to regions partitioned by the partition walls by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a blue firefly scatterer layer with a film thickness of 5 ⁇ m.
  • a low refractive index layer having a thickness of 1 ⁇ m was formed on the entire surface of the red phosphor layer, the green phosphor layer, and the blue scatterer layer on the side where the excitation light is incident by spin coating.
  • a material for the low refractive index layer “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
  • a dielectric multilayer film produced by alternately forming six layers by the method was formed to a thickness of 100 nm by a sputtering method.
  • a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed).
  • a binder for dispersing the light scattering particles Sekisui Plastics Co., Ltd. having an average particle diameter of 4 ⁇ m on Teijin DuPont's resin “LuxPrint 8155”: 30 g.
  • a 5 ⁇ m thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment formed on the opposite surface.
  • a phosphor substrate of Example 6 was obtained comprising a layer, a barrier formed on the side surface of the phosphor layer, and a wavelength selective transmission / reflection layer formed on one surface of the phosphor layer on the excitation light incident surface side.
  • a reflective electrode having a thickness of 100 nm made of silver is formed on a glass substrate having a thickness of 0.7 mm by a sputtering method, and a 20 nm-thick indium-tin oxide film is formed on the reflective electrode by a sputtering method.
  • a first electrode (anode) was formed by depositing an object (ITO). Thereafter, the first electrode was patterned into 90 stripes with a width of 160 ⁇ m and a pitch of 200 ⁇ m by a conventional photolithography method.
  • SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • the substrate on which the first electrode is formed is fixed to a substrate holder in an in-line type resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less to form an organic EL layer including an organic light emitting layer.
  • Each layer was formed.
  • the formation method of each layer which comprises an organic EL layer is demonstrated in detail.
  • 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
  • N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine is used as a hole transport material.
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic) (blue phosphorescent dopant) was co-deposited at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec, respectively.
  • a hole blocking layer (thickness: 10 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the substrate was fixed in a metal vapor deposition chamber, and the shadow mask for forming the translucent electrode was aligned with the substrate.
  • the shadow mask a mask provided with an opening so that the second electrode can be formed in a stripe shape having a width of 500 ⁇ m and a pitch of 600 ⁇ m in a direction facing the stripe of the first electrode.
  • magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm). Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did. A semitransparent electrode was formed by the above treatment.
  • a microcavity effect (interference effect) appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic EL layer can be efficiently propagated to the light extraction part side. Similarly, the emission peak was adjusted to 460 nm and the half value width to 50 nm by the microcavity effect.
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning by plasma CVD using a shadow mask from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions.
  • an organic EL element substrate on which an organic EL element was formed was obtained.
  • the organic EL element substrate and the phosphor substrate produced as described above were aligned using an alignment marker formed outside the pixel arrangement position.
  • a thermosetting resin was applied to the phosphor substrate in advance.
  • the two substrates are brought into close contact with each other through a thermosetting resin, and heated at 80 ° C. for 2 hours to cure the thermosetting resin, and the organic EL element substrate and the phosphor The substrates were bonded together. Note that the step of bonding the two substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
  • an organic EL display device of Example 6 was completed by connecting terminals formed in the periphery to an external power source.
  • the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer.
  • red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer.
  • full-color display was possible, and a good image and a display with good viewing angle characteristics that did not change in brightness or color even when viewed from any direction were obtained.
  • Example 7 [active drive type blue organic EL + phosphor method] A phosphor substrate was produced in the same manner as in Example 6.
  • An amorphous silicon semiconductor film was formed on a 100 ⁇ 100 mm square glass substrate by PECVD. Next, a polycrystalline silicon semiconductor film was formed by performing a crystallization treatment. Next, the polycrystalline silicon semiconductor film was patterned into a plurality of islands using a photolithography method. Next, a gate insulating film and a gate electrode layer were formed in this order on the patterned polycrystalline silicon semiconductor layer, and patterning was performed using a photolithography method.
  • the patterned polycrystalline silicon semiconductor film was doped with an impurity element such as phosphorus to form source and drain regions, and a TFT element was fabricated. Thereafter, a planarizing film was formed.
  • a silicon nitride film formed by PECVD and an acrylic resin layer formed by spin coater were laminated in this order.
  • the planarizing film First, after a silicon nitride film was formed, the silicon nitride film and the gate insulating film were collectively etched to form a contact hole leading to the source and / or drain region, and then a source wiring was formed.
  • the capacitor for setting the gate potential of the TFT to a constant potential is formed by interposing an insulating film such as an interlayer insulating film between the drain of the switching TFT and the source of the driving TFT.
  • the first electrode (anode) of each pixel is formed by sputtering so as to be electrically connected to the contact hole provided through the planarization layer connected to the TFT for driving each light emitting pixel. Formed.
  • the first electrode was formed by laminating an Al (aluminum) film having a thickness of 150 nm and an IZO (indium oxide-zinc oxide) film having a thickness of 20 nm.
  • the first electrode was patterned into a shape corresponding to each pixel by a conventional photolithography method.
  • the area of the first electrode was 300 ⁇ m ⁇ 160 ⁇ m. Further, it was formed on a 100 ⁇ 100 square substrate.
  • the display unit was 80 mm ⁇ 80 mm, a 2 mm wide sealing area was provided on the top, bottom, left, and right of the display unit, and a 2 mm terminal lead-out unit was further provided outside the sealing area on the short side of the display unit.
  • a 2 mm terminal extraction part was provided in the direction of bending.
  • the active matrix substrate on which the first electrode was formed was washed.
  • a method for cleaning the active matrix substrate for example, acetone and isopropyl alcohol were used for ultrasonic cleaning for 10 minutes, followed by UV-ozone cleaning for 30 minutes.
  • the active matrix substrate on which the first electrode is formed is fixed to a substrate holder in an in-line resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less, and an organic EL layer including an organic light emitting layer is formed Each constituent layer was formed.
  • the formation method of each layer which comprises an organic EL layer is demonstrated in detail.
  • 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
  • N, N′-di-1-naphthyl-N, N ′ ′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′4-diamine is used as a hole transport material.
  • a hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
  • a blue organic light emitting layer was formed at a desired pixel position on the hole transport layer.
  • This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic) (blue phosphorescent dopant) was co-deposited at a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec, respectively.
  • a hole blocking layer (thickness: 10 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the active matrix substrate on which the organic EL layer was formed was fixed in a metal deposition chamber, and the shadow mask for forming the translucent electrode and the active matrix substrate were aligned.
  • the shadow mask a mask provided with an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction facing the stripe of the first electrode.
  • magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm). Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did. A semitransparent electrode was formed by the above treatment.
  • a microcavity effect (interference effect) appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic EL layer can be efficiently propagated to the light extraction part side. Similarly, the emission peak was adjusted to 460 nm and the half value width to 50 nm by the microcavity effect.
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning by plasma CVD using a shadow mask from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions.
  • an active drive type organic EL element substrate on which an organic EL element was formed was obtained.
  • the active drive type organic EL element substrate and the phosphor substrate manufactured as described above were aligned using an alignment marker formed outside the pixel arrangement position.
  • a thermosetting resin was applied to the phosphor substrate in advance.
  • the two substrates After aligning the active drive type organic EL element substrate and the phosphor substrate, the two substrates are brought into close contact with each other through a thermosetting resin, and the thermosetting resin is cured by heating at 90 ° C. for 2 hours. And a phosphor substrate were bonded together.
  • the step of bonding the two substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
  • a polarizing plate was bonded to the substrate in the light extraction direction to obtain an active drive type organic EL element.
  • the terminal formed on the short side is connected to the power supply circuit via the source driver, and the terminal formed on the long side is connected to the external power supply via the gate driver, thereby 80 ⁇
  • An active drive organic EL display device having a display portion of 80 mm was completed.
  • the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer.
  • red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer. Chromaticity shift As a result, full-color display is possible, and a good image and a display with good viewing angle characteristics with no change in brightness or color even when viewed from any direction were obtained.
  • Example 8 [Blue LED + phosphor method] A phosphor substrate was produced in the same manner as in Example 6.
  • a buffer layer made of GaN was grown to a thickness of 60 nm on the C surface of the sapphire substrate set in the reaction vessel at 550 ° C.
  • the temperature was raised to 1050 ° C.
  • an n-type contact layer made of Si-doped n-type GaN was grown to a thickness of 5 ⁇ m using SiH 4 gas in addition to TMG and NH 3 .
  • TMA trimethylaluminum
  • a second cladding layer composed of a Si-doped n-type Al 0.3 Ga 0.7 N layer was grown at a thickness of 0.2 ⁇ m at 1050 ° C. .
  • the temperature is lowered to 850 ° C., and the first n-type cladding layer made of Si-doped n-type In 0.01 Ga 0.99 N is made 60 nm using TMG, TMI (trimethylindium), NH 3 and SiH 4. It was made to grow with the film thickness.
  • an active layer made of non-doped In 0.05 Ga 0.95 N was grown to a thickness of 5 nm at 850 ° C. using TMG, TMI, and NH 3 .
  • a first p-type cladding layer made of Mg-doped p-type In 0.01 Ga 0.99 N at 850 ° C. using CPMg (cyclopentadienyl magnesium) newly. was grown to a thickness of 60 nm.
  • a second p-type cladding layer made of Mg-doped p-type Al 0.3 Ga 0.7 N is grown to a thickness of 150 nm using TMG, TMA, NH 3 , CPMg I let you.
  • a p-type contact layer made of Mg-doped p-type GaN was grown to a thickness of 600 nm using TMG, NH 3 and CPMg at 1100 ° C. After the above operation was completed, the temperature was lowered to room temperature, the wafer was taken out of the reaction vessel, and the wafer was annealed at 720 ° C. to reduce the resistance of the p-type layer.
  • a mask having a predetermined shape was formed on the surface of the uppermost p-type contact layer, and etching was performed until the surface of the n-type contact layer was exposed.
  • a negative electrode made of titanium (Ti) and aluminum (Al) was formed on the surface of the n-type contact layer, and a positive electrode made of nickel (Ni) and gold (Au) was formed on the surface of the p-type contact layer.
  • the LED chip is fixed with a UV curable resin on a substrate on which wiring for connecting to a separately prepared external circuit is formed. The wiring on the substrate was electrically connected to obtain a light source substrate made of a blue LED.
  • thermosetting resin was applied to the phosphor substrate in advance.
  • the two substrates After aligning the light source substrate and the phosphor substrate, the two substrates are brought into close contact with each other through the thermosetting resin, and heated at 80 ° C. for 2 hours to cure the thermosetting resin, and the organic EL element substrate and the phosphor substrate. Were pasted together.
  • the step of bonding the two substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
  • the LED display device of Example 7 was completed by connecting the terminals formed in the periphery to an external power source.
  • the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer.
  • red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer. As a result, full-color display was possible, and a good image and a display with good viewing angle characteristics that did not change in brightness or color even when viewed from any direction were obtained.
  • the display device of Example 8 measured chromaticity viewing angle characteristics when all 24 colors of Macbeth color were displayed. .
  • it is said that when the value of the color change ⁇ u′v ′ is about 0.015 or less, a color difference cannot be detected by human eyes.
  • Example 9 [blue organic EL + liquid crystal + phosphor method] A low refractive index layer having a thickness of 1 ⁇ m was formed on a glass substrate by spin coating. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used. Next, a barrier (light scattering film) was formed on the low refractive index layer. Hereinafter, the method of forming the barrier will be described in detail.
  • epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile-type titanium oxide (refractive index: 2.71, particle size 250 nm), photopolymerization initiator and aromatic
  • a negative photosensitive resist was prepared by stirring and mixing a white photosensitive composition comprising a system solvent.
  • a negative resist was applied on the glass substrate by a spin coater method. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers. After covering this coating film with a mask capable of forming a desired image pattern, the coating film was irradiated with i-line (300 mJ / cm 2 ) and exposed.
  • a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed in the opening surrounded by the barrier.
  • a method for forming the red phosphor layer, the green phosphor layer, and the blue scatterer layer will be described in detail.
  • red phosphor layer In order to form a red phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% polystyrene is dissolved is added to 0.01 g of red phosphor rhodamine 6G, and hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm. was added, and the mixture was heated and stirred to prepare a red phosphor-forming coating solution.
  • the produced red phosphor-forming coating solution was applied in a pattern to regions partitioned by the partition walls by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a red phosphor layer was patterned with a film thickness of 5 ⁇ m.
  • a green phosphor layer To form a green phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% of polystyrene is dissolved is added to 0.01 g of coumarin, and then 40 g of hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm is added. Then, the mixture was heated and stirred to produce a green phosphor forming coating solution.
  • the prepared green phosphor forming coating solution was applied in a pattern to the area partitioned by the partition wall 103 by a dispenser method. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a green phosphor layer was patterned with a film thickness of 5 ⁇ m.
  • a blue scatterer layer In order to form a blue scatterer layer, first, as a binder for dispersing light scattering particles, a resin “LuxPrint 8155” manufactured by Teijin DuPont Co., Ltd .: 30 g, and Sekisui Plastics Co., Ltd. Polymer "SBX-4": 3.59 g and titanium oxide "R-25”: 1.27 g manufactured by Sakai Chemical Industry Co., Ltd. with an average particle size of 200 nm are added and thoroughly mixed for 30 minutes in an automatic mortar.
  • a low refractive index layer having a thickness of 1 ⁇ m was formed on the entire surface of the red phosphor layer, the green phosphor layer, and the blue scatterer layer on the side on which the excitation light is incident by spin coating.
  • a material for the low refractive index layer “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
  • a dielectric multilayer film produced by alternately forming six layers by the method was formed to a thickness of 100 nm by a sputtering method.
  • a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed).
  • a binder for dispersing the light scattering particles Sekisui Plastics Co., Ltd. having an average particle diameter of 4 ⁇ m on Teijin DuPont's resin “LuxPrint 8155”: 30 g.
  • a 5 ⁇ m thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater.
  • a flattening film is formed on the wavelength selective transmission / reflection layer by spin coating using an acrylic resin, and a polarizing film, a transparent electrode, and a light distribution film are formed on the flattening film by a conventional method.
  • a glass substrate, a phosphor layer formed on one surface thereof, a light distribution adjusting layer formed on the opposite surface, a barrier formed on a side surface of the phosphor layer, and excitation of the phosphor layer A phosphor substrate of Example 9 comprising a wavelength selective transmission / reflection layer formed on one surface of the light incident surface side was obtained.
  • a switching element made of TFT was formed on the glass substrate by a conventional method.
  • an ITO transparent electrode having a film thickness of 100 nm was formed so as to be in electrical contact with the TFT through the contact hole.
  • the transparent electrode was patterned by a normal photolithography method so as to have the same pitch as the pixels of the organic EL portion that had been prepared in advance.
  • an alignment film was formed by a printing method.
  • the substrate on which the TFT is formed and the phosphor substrate are bonded via a spacer having a thickness of 10 ⁇ m, and a TN mode liquid crystal material is injected between both substrates to complete the liquid crystal / phosphor portion. .
  • a reflective electrode having a thickness of 100 nm made of silver is formed on a glass substrate having a thickness of 0.7 mm by a sputtering method, and a 20 nm-thick indium-tin oxide film is formed on the reflective electrode by a sputtering method.
  • a first electrode (anode) was formed by depositing an object (ITO). Then, it patterned so that the width
  • SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • the substrate on which the first electrode is formed is fixed to a substrate holder in an in-line type resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less to form an organic EL layer including an organic light emitting layer.
  • Each layer was formed.
  • the formation method of each layer which comprises an organic EL layer is demonstrated in detail.
  • 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
  • CBP carbazole biphenyl
  • a 10 nm-thick hole transport layer was formed by resistance heating vapor deposition.
  • a near ultraviolet organic light emitting layer (thickness: 30 nm) was formed at a desired pixel position on the hole transport layer.
  • This near-ultraviolet organic light-emitting layer is formed by depositing 3,5-bis (4-tert-butyl-phenyl) -4-phenyl- [1,2,4] triazole (TAZ) (near-ultraviolet phosphorescent material) at a deposition rate of 1 It was formed by vapor deposition at a rate of 5 cm / sec.
  • a hole blocking layer (thickness: 20 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a semitransparent electrode was formed as the second electrode.
  • the substrate was fixed to a metal deposition chamber, and the shadow mask for forming the translucent electrode was aligned with the substrate.
  • the shadow mask a mask provided with an opening so that the second electrode can be formed in a stripe shape having a width of 500 ⁇ m and a pitch of 600 ⁇ m in a direction facing the stripe of the first electrode.
  • magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm). Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did. A semitransparent electrode was formed by the above treatment.
  • a microcavity effect appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic EL layer can be efficiently propagated to the light extraction part side. Similarly, the emission peak was adjusted to 370 nm and the half-value width to 30 nm by the microcavity effect.
  • an inorganic protective layer made of SiO 2 having a thickness of 3 ⁇ m was formed by patterning by plasma CVD using a shadow mask from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions.
  • an organic EL element substrate on which an organic EL element was formed was obtained.
  • the organic EL element substrate and the phosphor substrate produced as described above were aligned using an alignment marker formed outside the pixel arrangement position.
  • a thermosetting resin was applied to the phosphor substrate in advance.
  • the two substrates After aligning the organic EL element substrate and the phosphor substrate, the two substrates are brought into close contact with each other through a thermosetting resin, and heated at 80 ° C. for 2 hours to cure the thermosetting resin, and the organic EL element substrate and the phosphor The substrates were bonded together.
  • the step of bonding the two substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
  • an organic EL display device of Example 8 was completed by connecting terminals formed in the periphery to an external power source.
  • the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer.
  • red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer.
  • full-color display was possible, and a good image and a display with good viewing angle characteristics that did not change in brightness or color even when viewed from any direction were obtained.
  • the display device of Example 9 measured chromaticity viewing angle characteristics when all 24 colors of Macbeth color were displayed. .
  • Example 10 [blue backlight + liquid crystal + phosphor method] In the same manner as in Example 9, a liquid crystal / phosphor substrate portion was formed.
  • a light source As the directional blue backlight, a light source, a light guide plate, a reflection sheet, a brightness enhancement film, and a condensing lens were used.
  • a light source an LED “NFSC036C” manufactured by Nichia Corporation having a peak wavelength of 465 nm was used and arranged on the side surface of the light guide plate.
  • the light guide plate As the light guide plate, a polycarbonate resin formed into a wedge shape by injection molding was used.
  • a reflective sheet “ESR” manufactured by 3M was used for the bottom surface of the light guide plate (the LED was provided on the side of the wedge-shaped light guide plate having the larger cross-sectional area).
  • the brightness enhancement film “DBEFD400” manufactured by 3M Co., Ltd. and the condensing Fresnel lens “CF3-0.1” manufactured by Nippon Special Optical Resin Co., Ltd. are mounted in this order on the upper surface side (outgoing surface side) of the light guide plate. Completed the backlight.
  • the terminal formed in the periphery was connected to an external power source to complete the liquid crystal display device of Example 10.
  • the emitted light from the directional blue backlight is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red by a red phosphor film.
  • blue light is converted into green light with the green phosphor film.
  • isotropic light emission of red and green is obtained, and isotropic blue light emission is achieved through the blue scatterer film.
  • the light distribution adjustment layer provided on the phosphor layer and the scatterer layer provides a display that does not change in brightness when viewed from any direction and does not change color when viewed from any direction. It was. Thereby, full color display was possible, and a good image and an image with good viewing angle characteristics could be obtained.
  • the present invention can be used for a phosphor substrate, various light emitting devices using the phosphor substrate, a display device, and a lighting device.

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Abstract

The purpose of the present invention is to provide a fluorescent substrate, a light-emitting device, a display device, and a lighting device that have good viewing angle-color display characteristics so that hues do not change regardless of viewing angle. The fluorescent substrate comprises: a substrate on which a fluorescent layer that emits fluorescent light when excited by excitation light is formed on one surface thereof; and a light distribution adjustment layer that is formed between the substrate and the fluorescent layer and changes at least the emission direction of the fluorescent light emitted from the fluorescent layer.

Description

蛍光体基板、発光デバイス、表示装置、及び照明装置Phosphor substrate, light emitting device, display device, and illumination device
  本発明は、励起光によって蛍光を発する蛍光体層を備えた蛍光体基板、発光デバイス、表示装置、照明装置に関する。 The present invention relates to a phosphor substrate, a light emitting device, a display device, and a lighting device that include a phosphor layer that emits fluorescence by excitation light.
  近年、社会の高度情報化に伴い、フラットパネルディスプレイのニーズが高まっている。フラットパネルディスプレイとしては、例えば、非自発光型の液晶ディスプレイ(LCD)、自発光型のプラズマディスプレイ(PDP)、無機エレクトロルミネセンス(無機EL)ディスプレイ、有機エレクトロルミネセンス(以下、「有機EL」または「有機LED」とも言う)ディスプレイ等が挙げられる。 In recent years, the need for flat panel displays has increased with the advancement of information technology in society. Examples of the flat panel display include a non-self-luminous liquid crystal display (LCD), a self-luminous plasma display (PDP), an inorganic electroluminescence (inorganic EL) display, and organic electroluminescence (hereinafter, “organic EL”). Or a display or the like.
これらフラットパネルディスプレイの中でも、特に、液晶ディスプレイでは、一般に透過型の液晶表示素子の背面に光源として照明装置を設け、液晶素子を背面から照射することで視認性を向上させている。
このような液晶ディスプレイでは、光源からの出射光は一般的に非偏光であり、液晶表示素子の照明光入射側に配置した偏光板で50%以上が吸収されてしまい、光源光の利用効率が低い。また、光源として白色光源を用い、3原色あるいは4原色に対応したマイクロカラーフィルターを表示面内に配置し、加法混色によりカラー表示を行うカラー液晶表示装置では、カラーフィルターで70%を超える光が吸収されるため、光源光の利用効率が非常に低く、光利用効率の高効率化が大きな課題となっている。
Among these flat panel displays, in particular, in a liquid crystal display, an illumination device is generally provided as a light source on the back surface of a transmissive liquid crystal display element, and visibility is improved by irradiating the liquid crystal element from the back surface.
In such a liquid crystal display, the light emitted from the light source is generally non-polarized light, and more than 50% is absorbed by the polarizing plate disposed on the illumination light incident side of the liquid crystal display element. Low. Further, in a color liquid crystal display device that uses a white light source as a light source and arranges a micro color filter corresponding to the three primary colors or the four primary colors in the display surface and performs color display by additive color mixing, light exceeding 70% is emitted by the color filter. Since it is absorbed, the utilization efficiency of the light source light is very low, and increasing the efficiency of the light utilization efficiency has become a major issue.
こうした課題を解決するために、例えば、透明電極形成面が対向するように、一定の間隙をもって配置された一対の透明基板と、該透明基板間に挟持された液晶層と、一対の透明基板の透明電極により形成されるマトリクス状の画素に画像信号に対応した電圧を印加する電圧印加手段を有する液晶表示素子と、青色域から青緑色域の光を発する照明装置と、青色域から青緑色域の光を励起光として赤色光を発光する波長変換用蛍光体と、青色域から青緑色域の光を励起光として緑色光を発光する波長変換用蛍光体、青色域から青緑色域以外の光をカットするカラーフィルターと、を備えたカラー表示装置が知られている(例えば、特許文献1、2参照)。 In order to solve such a problem, for example, a pair of transparent substrates disposed with a certain gap so that the transparent electrode forming surfaces face each other, a liquid crystal layer sandwiched between the transparent substrates, and a pair of transparent substrates A liquid crystal display element having a voltage applying means for applying a voltage corresponding to an image signal to a matrix pixel formed by a transparent electrode, an illumination device emitting light from a blue region to a blue-green region, and a blue region to a blue-green region Wavelength-converting phosphor that emits red light using the light from the light source, wavelength-converting phosphor that emits green light using the light from the blue region to the blue-green region, and light other than the blue region to the blue-green region There is known a color display device including a color filter for cutting (see, for example, Patent Documents 1 and 2).
 こうした特許文献1、2などに記載された構成によれば、青色表示画素として青色光源から発光した青色光をそのまま利用できるので、光利用効率を高くすることができる。 しかしながら、青色光源を用いた液晶表示装置においては、表示画像を表示面から傾斜した斜め方向から観察すると、黄色味に色づいて視野角色表示特性が低下するという課題があった。 According to the configuration described in Patent Documents 1 and 2 and the like, since the blue light emitted from the blue light source can be used as it is as the blue display pixel, the light use efficiency can be increased. However, in a liquid crystal display device using a blue light source, when a display image is observed from an oblique direction inclined from the display surface, there is a problem that the viewing angle color display characteristic is deteriorated due to yellowish coloration.
 こうした視野角色表示特性の低下を改善するために、例えば、青色光を発光する青色光源と、液晶セル及び該液晶セルを挟持する一対の偏向板を有する液晶素子と、該青色光により励起されて赤色の蛍光を発する蛍光体、及び、該青色光により励起されて緑色の蛍光を発する蛍光体を有するカラーフィルターと、少なくとも該青色光を散乱させる光散乱フィルムとを含むことを特徴とする液晶表示装置が知られている(例えば、特許文献3参照)。 In order to improve such deterioration in viewing angle color display characteristics, for example, a blue light source that emits blue light, a liquid crystal element having a liquid crystal cell and a pair of deflecting plates sandwiching the liquid crystal cell, and excited by the blue light are used. A liquid crystal display comprising: a phosphor that emits red fluorescence; a color filter having a phosphor that emits green fluorescence when excited by the blue light; and a light scattering film that scatters at least the blue light. An apparatus is known (see, for example, Patent Document 3).
 また、発光層と外部との間に、正面輝度値と視野角50°~70°方向の輝度値が、正面輝度値<50°~70°方向の輝度値を満たすように光の進行方向を反射、屈折により乱れさせる層を設け、立体角の関係から光量の割合の大きい広角領域の光を外部に取り出せるようにして、光の取出し効率を改善した有機EL素子も知られている(例えば、特許文献4参照)。 Further, the light traveling direction is set between the light emitting layer and the outside so that the front luminance value and the luminance value in the direction of the viewing angle of 50 ° to 70 ° satisfy the luminance value of the front luminance value <50 ° to 70 °. There is also known an organic EL element in which a layer that is disturbed by reflection and refraction is provided and light in a wide-angle region with a large proportion of the amount of light is extracted from the relationship of the solid angle to improve the light extraction efficiency (for example, (See Patent Document 4).
日本国公開特許公報「特開2000-131683号公報」Japanese Patent Publication “JP 2000-131683 A” 日本国公開特許公報「特開2006-309225号公報」Japanese Patent Publication “JP-A-2006-309225” 日本国公開特許公報「特開2009-244383号公報」Japanese Patent Publication “JP 2009-244383 A” 日本国公開特許公報「特開2004-296423号公報」Japanese Patent Publication “Japanese Patent Laid-Open No. 2004-296423”
 しかしながら、特許文献1、2に記載された表示装置では、青色表示画素として青色光源から発光した青色光をそのまま利用できるので、光利用効率を高くすることができるものの、青色光源を用いるために、画素に蛍光体を用いることによって個々の画素の発光プロファイルの広視野角化は図れる一方、画素間で発光プロファイルが異なる場合には、視野角色表示特性が低下するという課題があった。 However, in the display devices described in Patent Documents 1 and 2, since the blue light emitted from the blue light source can be used as it is as the blue display pixel, the light use efficiency can be increased, but in order to use the blue light source, The use of a phosphor in the pixel can increase the viewing angle of the emission profile of each pixel. On the other hand, when the emission profile is different among the pixels, there is a problem that the viewing angle color display characteristics are deteriorated.
 また、蛍光体層は等方的、即ちどの方向に対しても等しいエネルギーで光を放射する特性を有することから、ディスプレイの明るさの度合いで定義される輝度の視野角特性を考えた場合、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有することが多い。ディスプレイを視認する方向は、0°付近方向が大半であり、テレビでも、その視認方向は60°程度までである(例えば、参考文献1参照)。従って、光を有効に利用するためには、蛍光体の発光プロファイルを最適化する手立てが必要であった。 In addition, since the phosphor layer is isotropic, that is, has the property of emitting light with equal energy in any direction, when considering the viewing angle characteristics of the brightness defined by the brightness level of the display, Due to the solid angle, it has a profile in which the luminance increases as the viewing angle increases when the viewing angle (angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is from 0 ° to around 80 °. There are many. The direction of visually recognizing the display is mostly in the vicinity of 0 °, and even in a television, the viewing direction is up to about 60 ° (for example, see Reference 1). Therefore, in order to use light effectively, a means for optimizing the emission profile of the phosphor is necessary.
また、特許文献3に記載された液晶表示装置では、少なくとも青色画素に青色光を散乱させる光散乱フィルムを有するため、青色画素からの発光の高視野角化を図ることができるものの、光散乱フィルムには青色光を散乱させる機能しか付与されていないため、赤色画素と緑色画素の発光プロファイルを合せ込むことはできない。即ち、各画素間の発光プロファイルを合せる手立てが取られていないため、表示画像を斜めから見たときに色味が変化し、視野角色表示特性が低下するという課題があった。 In addition, the liquid crystal display device described in Patent Document 3 has a light scattering film that scatters blue light to at least a blue pixel, so that the viewing angle of light emitted from the blue pixel can be increased, but the light scattering film Since only the function to scatter blue light is provided, the emission profiles of red and green pixels cannot be combined. That is, since there is no way to match the light emission profiles between the pixels, there is a problem that the color changes when the display image is viewed obliquely, and the viewing angle color display characteristics deteriorate.
また、青色光を散乱させる機能しか付与されていないため、蛍光体を用いた赤色画素と緑色画素の発光プロファイルを最適化することはできず、特許文献1、2に記載された表示装置と同様に、光の利用効率が不十分であるという課題があった。更に、光散乱フィルムを構成するベースフィルムが、光散乱層と蛍光体層の間に介在するため、1画素から発光した光が、例えば、ベースフィルムと光散乱層の界面で反射され、隣接する画素に侵入することにより、色滲みが発生するという課題があった。 In addition, since only the function of scattering blue light is provided, it is not possible to optimize the light emission profiles of the red pixel and the green pixel using phosphors, which is the same as the display devices described in Patent Documents 1 and 2. In addition, there is a problem that the light use efficiency is insufficient. Furthermore, since the base film constituting the light scattering film is interposed between the light scattering layer and the phosphor layer, the light emitted from one pixel is reflected at the interface between the base film and the light scattering layer, for example, and is adjacent. There is a problem that color blur occurs due to intrusion into a pixel.
 また、特許文献4に記載された有機EL素子では、出射光の発光プロファイルを合せる手立てが取られていないため、表示画像を斜めから見たときに色味が変化し、視野角色表示特性が低下するという課題があった。 Further, in the organic EL element described in Patent Document 4, since the means for matching the emission profile of the emitted light is not taken, the color changes when the display image is viewed obliquely, and the viewing angle color display characteristics are deteriorated. There was a problem to do.
 本発明は、上記の事情に鑑みてなされたものであり、蛍光体層と配光調整層を組み合わせることによって、蛍光体層から発した蛍光の発光プロファイルを、最適な配光プロファイルに調整することが可能であり、かつ異なる発光プロファイルを持つ複数の蛍光体層を有する場合には、それぞれの蛍光体層に適合した少なくとも1つ以上の配光調整層を蛍光体層と組み合わせることによって、異なる蛍光体層からの発光プロファイルを合せ込むことが可能であり、視野角によって色味の変わらない良好な視野角色表示特性を有する蛍光体基板、発光デバイス、表示装置、及び照明装置を提供することを目的とする。 The present invention has been made in view of the above circumstances, and adjusts the emission profile of fluorescence emitted from a phosphor layer to an optimum light distribution profile by combining the phosphor layer and the light distribution adjustment layer. And having a plurality of phosphor layers having different emission profiles, combining at least one light distribution adjusting layer suitable for each phosphor layer with the phosphor layer can produce different fluorescence layers. An object of the present invention is to provide a phosphor substrate, a light emitting device, a display device, and an illuminating device that can be combined with a light emission profile from a body layer and have a good viewing angle color display characteristic that does not change in color depending on the viewing angle. And
 上記課題を解決するために、本発明のいくつかの態様は次のような蛍光体基板、発光デバイス、表示装置、及び照明装置を提供した。
 すなわち、本発明の蛍光体基板は、励起光によって励起され、蛍光を発する蛍光体層が一面に形成された基板と、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層が形成されていることを特徴とする。
In order to solve the above problems, some aspects of the present invention provide the following phosphor substrate, light-emitting device, display device, and illumination device.
That is, the phosphor substrate of the present invention includes a substrate on which a phosphor layer that is excited by excitation light and emits fluorescence is formed on one surface, and a light distribution adjustment layer that changes at least the emission direction of fluorescence emitted from the phosphor layer. Is formed.
 前記配光調整層が、少なくとも1つ以上の粒子を混合した透光性樹脂を含む光散乱材料で構成されていることを特徴とする。 The light distribution adjusting layer is made of a light scattering material including a light-transmitting resin in which at least one particle is mixed.
  本発明の発光デバイスは、前記各項記載の蛍光体基板と、前記励起光を発する励起光源とを備えたことを特徴とする。 発 光 A light emitting device according to the present invention includes the phosphor substrate described in each of the above items and an excitation light source that emits the excitation light.
  前記配光調整層は、前記基板と前記蛍光体層の間に配されていることを特徴とする。 The light distribution adjustment layer is disposed between the substrate and the phosphor layer.
前記配光調整層は、前記基板における前記励起光の入射面と対面する出射面から、前記出射面と垂直な法線方向である視野角0°方向の輝度値L1と、視野角0°よりも大きい視野角の輝度値L2との関係が、少なくともL1≧L2を満たすように蛍光を出射させることを特徴とする。
  また、前記配光調整層は、前記輝度値L1と、前記視野角が60°方向の輝度値L3との関係が少なくともL3/L1≧0.8を満たすように蛍光を出射させることを特徴とする。
The light distribution adjusting layer has a luminance value L1 in a direction of a viewing angle of 0 ° that is a normal direction perpendicular to the emitting surface and a viewing angle of 0 ° from the emitting surface facing the incident surface of the excitation light on the substrate. The fluorescence is emitted so that the relationship with the luminance value L2 of a larger viewing angle satisfies at least L1 ≧ L2.
Further, the light distribution adjusting layer emits fluorescence so that a relationship between the luminance value L1 and the luminance value L3 in the direction of the viewing angle of 60 ° satisfies at least L3 / L1 ≧ 0.8. To do.
  前記蛍光体層の厚み方向に沿った少なくとも1つ以上の側面に光反射性の障壁が形成されていることを特徴とする。
  また、前記蛍光体層における前記励起光の入射面側には、前記励起光の波長範囲のうちピーク波長域の励起光を少なくとも透過し、かつ前記蛍光体層から発した前記蛍光の波長範囲のうちピーク波長域の蛍光を少なくとも反射させる波長選択層が形成されていることを特徴とする。
A light-reflective barrier is formed on at least one side surface along the thickness direction of the phosphor layer.
The excitation light incident surface side of the phosphor layer transmits at least excitation light in a peak wavelength region of the excitation light wavelength range and has a wavelength range of the fluorescence emitted from the phosphor layer. Among them, a wavelength selection layer that reflects at least fluorescence in a peak wavelength region is formed.
 前記蛍光体層と前記波長選択層との間に、前記蛍光体層よりも屈折率が小さい低屈折率層が配されていることを特徴とする。
 また、前記低屈折率層は、前記配光調整層と前記蛍光体層との間にも更に配されていることを特徴とする。
 また、前記低屈折率層の屈折率は、1~1.5の範囲であることを特徴とする。
A low refractive index layer having a refractive index smaller than that of the phosphor layer is disposed between the phosphor layer and the wavelength selection layer.
Further, the low refractive index layer is further disposed between the light distribution adjusting layer and the phosphor layer.
Further, the refractive index of the low refractive index layer is in the range of 1 to 1.5.
  前記低屈折率層は、気体から構成されることを特徴とする。
  また、前記蛍光体層は、前記基板の一面に複数並べて配列されていることを特徴とする。
  また、前記配光調整層は、複数の前記蛍光体層のそれぞれに対応するように複数並べて配列されていることを特徴と。
The low refractive index layer is composed of a gas.
In addition, a plurality of the phosphor layers are arranged side by side on one surface of the substrate.
A plurality of the light distribution adjustment layers are arranged side by side so as to correspond to each of the plurality of phosphor layers.
  互いに隣接する前記蛍光体層どうしの間に光吸収層を更に配したことを特徴とする。
  また、前記光吸収層は、互いに隣接する前記配光調整層どうしの間にも更に配したことを特徴とする。また、前記光吸収層は、前記障壁の厚み方向に垂直に広がる上面、或いは下面の少なくとも一方に形成されていることを特徴とする。
A light absorption layer is further disposed between the phosphor layers adjacent to each other.
The light absorption layer may be further disposed between the light distribution adjustment layers adjacent to each other. The light absorption layer may be formed on at least one of an upper surface or a lower surface extending perpendicular to the thickness direction of the barrier.
  前記障壁の少なくとも前記蛍光体層と接する部分が光散乱性を有することを特徴とする。
 また、前記障壁の少なくとも前記蛍光体層と接する部分が凹凸形状を成すことを特徴とする。
  また、前記配光調整層は、前記基板における前記励起光の入射面と対面する出射面に沿って広がることを特徴とする。
At least a portion of the barrier that is in contact with the phosphor layer has light scattering properties.
In addition, at least a portion of the barrier that is in contact with the phosphor layer has an uneven shape.
Further, the light distribution adjusting layer is characterized by spreading along an exit surface facing the incident surface of the excitation light on the substrate.
  本発明の表示装置は前記各項に記載の発光デバイスを備えたことを特徴とする。 表示 A display device according to the present invention includes the light-emitting device described in each of the above items.
  前記励起光源は紫外線波長域の励起光を出射し、
  前記蛍光体層は、前記紫外線波長域の励起光によって赤色光を発する赤色画素を構成する赤色蛍光体層と、前記紫外線波長域の励起光によって緑色光を発する緑色画素を構成する緑色蛍光体層と、前記紫外線波長域の励起光によって青色光を発する青色画素を構成する青色蛍光体層と、を少なくとも備えたことを特徴とする。
The excitation light source emits excitation light in the ultraviolet wavelength region,
The phosphor layer comprises a red phosphor layer that constitutes a red pixel that emits red light by excitation light in the ultraviolet wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by excitation light in the ultraviolet wavelength region And a blue phosphor layer that constitutes a blue pixel that emits blue light by excitation light in the ultraviolet wavelength region.
  前記励起光源は青色波長域の励起光を出射し、
  前記蛍光体層は、前記青色波長域の励起光によって赤色光を発する赤色画素を構成する赤色蛍光体層と、前記青色波長域の励起光によって緑色光を発する緑色画素を構成する緑色蛍光体層と、を少なくとも備え、また前記青色波長域の励起光を散乱させる青色画素を構成する青色散乱体層を備えたことを特徴とする。
 また、前記青色散乱体層と、前記配光調整層とを一体に形成したことを特徴とする。
The excitation light source emits excitation light in a blue wavelength region,
The phosphor layer includes a red phosphor layer that constitutes a red pixel that emits red light by the excitation light in the blue wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by the excitation light in the blue wavelength region. And a blue scatterer layer constituting a blue pixel that scatters the excitation light in the blue wavelength region.
Further, the blue scatterer layer and the light distribution adjustment layer are integrally formed.
  前記励起光源は青色波長域の励起光を出射し、
  前記蛍光体層は、前記青色波長域の励起光によって赤色光を発する赤色画素を構成する赤色蛍光体層と、前記青色波長域の励起光によって緑色光を発する緑色画素を構成する緑色蛍光体層と、前記青色波長域の励起光によって青色光を発する青色画素を構成する青色蛍光体層と、を少なくとも備えたことを特徴とする。
The excitation light source emits excitation light in a blue wavelength region,
The phosphor layer includes a red phosphor layer that constitutes a red pixel that emits red light by the excitation light in the blue wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by the excitation light in the blue wavelength region. And a blue phosphor layer that constitutes a blue pixel that emits blue light by the excitation light in the blue wavelength region.
  前記励起光源に対応するアクティブマトリックス駆動素子を配置したことを特徴とする。
  また、前記励起光源は、発光ダイオード、有機エレクトロルミネセンス素子、無機エレクトロルミネセンス素子のいずれかから構成されることを特徴とする。
An active matrix driving element corresponding to the excitation light source is arranged.
Further, the excitation light source is composed of any one of a light emitting diode, an organic electroluminescence element, and an inorganic electroluminescence element.
  前記励起光源は面状光源を成し、前記励起光源と前記基板との間に、前記励起光の透過率を制御可能な液晶素子を形成したことを特徴とする。
 また、前記励起光源から出射される励起光は、指向性を有していることを特徴とする。
The excitation light source is a planar light source, and a liquid crystal element capable of controlling the transmittance of the excitation light is formed between the excitation light source and the substrate.
The excitation light emitted from the excitation light source has directivity.
  前記励起光源と前記基板との間に、波長435nm以上480nm以下における消光比が10000以上となる偏光板を設けたことを特徴とする。
  また、前記蛍光体層と前記配光調整層の間、或いは、前記配光調整層と前記基板との間の少なくとも一方にカラーフィルターを設けたことを特徴とする。
A polarizing plate having an extinction ratio of 10,000 or more at a wavelength of 435 nm or more and 480 nm or less is provided between the excitation light source and the substrate.
Further, a color filter is provided between at least one of the phosphor layer and the light distribution adjustment layer, or between the light distribution adjustment layer and the substrate.
  光出射面から出射される光の正面方向における色度u’,v’の値に対する、全方位の色度u’,v’の値の色変化Δu’v’が0.01以下であることを特徴とする。
  また、前記配光調整層、或いは、前記基板に重ねて、外光の反射を防止する外光反射防止層を設けたことを特徴とする。
  また、前記外光反射防止層の屈折率は、厚み方向に沿って漸増または漸減する屈折率勾配を有することを特徴とする。
The color change Δu′v ′ of the omnidirectional chromaticity u ′, v ′ with respect to the value of the chromaticity u ′, v ′ in the front direction of the light emitted from the light emitting surface is 0.01 or less. It is characterized by.
The light distribution adjusting layer or an external light antireflection layer for preventing reflection of external light may be provided so as to overlap the substrate.
Further, the refractive index of the external light antireflection layer has a refractive index gradient that gradually increases or decreases along the thickness direction.
  本発明の照明装置は、前記各項に記載の発光デバイスを備えたことを特徴とする。 照明 A lighting device according to the present invention includes the light-emitting device described in each of the above items.
  本発明によれば、蛍光体層から発した蛍光の発光プロファイルを、最適な配光プロファイルに調整することが可能であり、さらに、異なる発光プロファイルを有する蛍光体層の配光プロファイルを合せ込むことが可能であり、視野角によって色味の変わらない良好な視野角色表示特性を有する蛍光体基板、発光デバイス、表示装置、及び照明装置を提供することができる。 According to the present invention, it is possible to adjust the light emission profile of the fluorescence emitted from the phosphor layer to an optimum light distribution profile, and to further match the light distribution profiles of the phosphor layers having different light emission profiles. Therefore, it is possible to provide a phosphor substrate, a light emitting device, a display device, and a lighting device having good viewing angle color display characteristics that do not change in color depending on the viewing angle.
従来の発光デバイスの第一例を示す概略断面図である。It is a schematic sectional drawing which shows the 1st example of the conventional light-emitting device. 従来の発光デバイスの第二例を示す概略断面図である。It is a schematic sectional drawing which shows the 2nd example of the conventional light-emitting device. 本発明に係る発光デバイスの第一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 1st embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第二実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 2nd embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第三実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 3rd embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第四実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 4th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第五実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 5th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第六実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 6th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第七実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 7th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第八実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 8th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第九実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 9th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 10th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 11th Embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十ニ実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 10th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十三実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 13th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十四実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 14th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十五実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 15th embodiment of the light-emitting device which concerns on this invention. 本発明に係る発光デバイスの第十六実施形態を示す概略断面図である。It is a schematic sectional drawing which shows 16th embodiment of the light-emitting device which concerns on this invention. 本発明に係る表示装置を構成する有機EL素子基板を示す概略断面図である。It is a schematic sectional drawing which shows the organic EL element substrate which comprises the display apparatus which concerns on this invention. 本発明に係る表示装置を構成するLED基板を示す概略断面図である。It is a schematic sectional drawing which shows the LED substrate which comprises the display apparatus which concerns on this invention. 本発明に係る表示装置を構成する無機EL素子基板を示す概略断面図である。It is a schematic sectional drawing which shows the inorganic EL element substrate which comprises the display apparatus which concerns on this invention. 本発明に係る表示装置を構成する有機ELディスプレイを示す概略断面図である。It is a schematic sectional drawing which shows the organic electroluminescent display which comprises the display apparatus which concerns on this invention. 本発明に係る表示装置を構成する有機ELディスプレイを示す概略平面図である。1 is a schematic plan view showing an organic EL display constituting a display device according to the present invention. 本発明に係る表示装置の概略断面図である。It is a schematic sectional drawing of the display apparatus which concerns on this invention. 本発明に係る表示装置の概略断面図である。It is a schematic sectional drawing of the display apparatus which concerns on this invention. 本発明に係る表示装置の一適用例である携帯電話を示す外観図である。It is an external view showing a mobile phone as an application example of a display device according to the present invention. 本発明に係る表示装置の一適用例である薄型テレビを示す外観図である。It is an external view which shows the thin television which is one application example of the display apparatus which concerns on this invention. 本発明に係る有機EL照明の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment of the organic electroluminescent illumination which concerns on this invention. 本発明に係る照明装置の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment of the illuminating device which concerns on this invention. 実施形態における視野角を説明した説明図である。It is explanatory drawing explaining the viewing angle in embodiment.
「従来の発光デバイス:第一例」
  まず最初に、本願発明の発光デバイスとの差異を明確にするために、従来の発光デバイスの構成、作用について説明する。
  図1は、従来の発光デバイスの第一例を示す概略断面図である。
 従来の発光デバイス10は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層12が形成された基板13とから概略構成されている。
"Conventional light-emitting device: first example"
First, in order to clarify the difference from the light emitting device of the present invention, the configuration and operation of a conventional light emitting device will be described.
FIG. 1 is a schematic cross-sectional view showing a first example of a conventional light emitting device.
A conventional light-emitting device 10 is generally configured by an excitation light source 11 that emits excitation light, and a substrate 13 that is arranged opposite to the excitation light source and on which a phosphor layer 12 that is excited by the excitation light and emits fluorescence is formed. ing.
  一般的に蛍光体層に外部から励起光を入射した場合、蛍光体層は等方的、即ちどの方向に対しても等しいエネルギーで光を放射する特性を有する。ディスプレイの明るさの度合いで定義される輝度の視野角特性を考えた場合、蛍光体層から発光し、基板を介して外部に取り出される光は、図1に示すように、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有することが多い。ディスプレイを視認する方向は、0°付近方向が大半であり、テレビでも、その視認方向は60°程度までである。従って、光を有効に利用できないという課題がある。 Generally, when excitation light is incident on the phosphor layer from the outside, the phosphor layer is isotropic, that is, has a characteristic of emitting light with equal energy in any direction. Considering the viewing angle characteristic of the brightness defined by the brightness level of the display, the light emitted from the phosphor layer and extracted outside through the substrate, as shown in FIG. When the viewing angle (angle formed by the viewing direction and the surface perpendicular to the light emitting surface) is from 0 ° to around 80 °, the profile often has a higher luminance as the viewing angle increases. The direction of visually recognizing the display is mostly in the vicinity of 0 °, and the viewing direction is about 60 ° even on a television. Therefore, there is a problem that light cannot be used effectively.
「従来の発光デバイス:第二例」
 図2は、従来の発光デバイスの第二例を示す概略断面図である。
 従来の発光デバイス20は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層21と、第二の蛍光体層22と、第三の蛍光体層23と、互いに隣接した前記蛍光体層どうしの間にそれぞれ光吸収層24が形成された基板13とから概略構成されている。
"Conventional light-emitting device: Second example"
FIG. 2 is a schematic cross-sectional view showing a second example of a conventional light emitting device.
A conventional light emitting device 20 includes an excitation light source 11 that emits excitation light, a first phosphor layer 21 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer. 22, a third phosphor layer 23, and a substrate 13 in which a light absorption layer 24 is formed between the phosphor layers adjacent to each other.
 発光デバイスが、図2に示すような複数の異なる蛍光体層で構成されている場合には、蛍光体層から発光し、基板を介して外部に取り出される光の配光プロファイルは、各蛍光体層によって異なることがある。このような場合、表示画像を正面から見たときと、斜めから見たときで色味が変化し、視野角色表示特性が低下するという課題がある。 When the light-emitting device is composed of a plurality of different phosphor layers as shown in FIG. 2, the light distribution profile of the light emitted from the phosphor layer and extracted outside through the substrate is as follows. May vary by layer. In such a case, there is a problem that the tint changes between when the display image is viewed from the front and when viewed from an oblique direction, and the viewing angle color display characteristics are degraded.
 以下、図面を参照して、本発明に係る蛍光体基板、発光デバイス、表示装置、及び照明装置の実施形態について説明する。なお、以下に示す実施形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。また、以下の説明で用いる図面は、本発明の特徴をわかりやすくするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率などが実際と同じであるとは限らない。 Hereinafter, embodiments of a phosphor substrate, a light emitting device, a display device, and an illumination device according to the present invention will be described with reference to the drawings. The following embodiments are specifically described for better understanding of the gist of the invention, and do not limit the present invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there is a case where a main part is shown in an enlarged manner for convenience, and the dimensional ratio of each component is the same as the actual one. Not necessarily.
 なお、以下に詳細に説明する蛍光体基板、発光デバイス、表示装置、及び照明装置の各実施形態において、視野角という用語は、図30に示すように、蛍光体Fmが形成された(透明な)基板Pからなる蛍光体基板FPの光(蛍光)の出射面FPaに沿った方向を視野角90°、この出射面に対して垂直な方向を視野角0°と定義する。例えば、視野角45°と言った場合、蛍光体基板のの出射面に沿った方向(90°)と、出射面に対して垂直な方向(0°)との間の45°に傾斜した角度を示す。 In addition, in each embodiment of the phosphor substrate, the light emitting device, the display device, and the lighting device described in detail below, the term viewing angle indicates that the phosphor Fm is formed as shown in FIG. ) A direction along the light emission surface FPa of the phosphor substrate FP made of the substrate P is defined as a viewing angle of 90 °, and a direction perpendicular to the emission surface is defined as a viewing angle of 0 °. For example, when the viewing angle is 45 °, the angle is inclined at 45 ° between the direction (90 °) along the emission surface of the phosphor substrate and the direction (0 °) perpendicular to the emission surface. Indicates.
「発光デバイス」
(1)第一実施形態
 図3は、第一実施形態に係る発光デバイスを示す概略断面図である。
 発光デバイス30は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層12が形成された基板13と、前記基板13と前記蛍光体層12の間に形成された、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層31から概略構成される。
"Light Emitting Device"
(1) First Embodiment FIG. 3 is a schematic cross-sectional view showing a light emitting device according to the first embodiment.
The light emitting device 30 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed to face the excitation light source, and is formed with a phosphor layer 12 that is excited by the excitation light and emits fluorescence. A light distribution adjusting layer 31 that is formed between the phosphor layers 12 and changes the emission direction of the fluorescence emitted from at least the phosphor layers is roughly constituted.
 蛍光体層12は、基板13の一方の面に形成されており、蛍光体層12と基板13の間には、配光調整層31が形成されている。 The phosphor layer 12 is formed on one surface of the substrate 13, and a light distribution adjustment layer 31 is formed between the phosphor layer 12 and the substrate 13.
 以下、発光デバイス30を構成する各構成部材およびその形成方法について具体的に説明するが、本実施形態はこれら構成部材および形成方法に限定されるものではない。 Hereinafter, although each structural member which comprises the light-emitting device 30, and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
 蛍光体を励起する励起光源11としては、紫外光、青色光を発光する光源が用いられる。このような光源としては、例えば、紫外発光ダイード(以下、「紫外LED」と略すこともある。)、青色発光ダイード(以下、「青色LED」と略すこともある。)、紫外発光無機エレクトロルミネッセンス素子(以下、「紫外発光無機EL素子」と略すこともある。)、青色発光無機エレクトロルミネッセンス素子(以下、「青色発光無機EL素子」と略すこともある。)、紫外発光有機エレクトロルミネッセンス素子(以下、「紫外発光有機EL素子」と略すこともある。)、青色発光有機エレクトロルミネッセンス素子(以下、「青色発光有機EL素子」と略すこともある。)等の発光素子が挙げられる。励起光源11としては、上記のようなものが挙げられるが、これらに限定されるものではない。 As the excitation light source 11 for exciting the phosphor, a light source that emits ultraviolet light or blue light is used. Examples of such a light source include an ultraviolet light emitting diode (hereinafter sometimes abbreviated as “ultraviolet LED”), a blue light emitting diode (hereinafter sometimes abbreviated as “blue LED”), and an ultraviolet light emitting inorganic electroluminescence. An element (hereinafter sometimes abbreviated as “ultraviolet light emitting inorganic EL element”), a blue light emitting inorganic electroluminescence element (hereinafter sometimes abbreviated as “blue light emitting inorganic EL element”), an ultraviolet light emitting organic electroluminescence element ( Hereinafter, light emitting elements such as “ultraviolet light emitting organic EL element” and blue light emitting organic electroluminescence element (hereinafter sometimes abbreviated as “blue light emitting organic EL element”) may be used. Examples of the excitation light source 11 include those described above, but are not limited thereto.
 また、励起光源11を直接スイッチングすることにより、画像を表示するための、発光のON/OFFを制御することが可能であるが、励起光源11と蛍光体層12との間に、液晶のようなシャッター機能を有する層を配置し、それを、制御することによって、発光のON/OFFを制御することも可能である。また、液晶のようなシャッター機能を有する層と励起光源11の両方について、ON/OFFを制御することも可能である。 Further, by directly switching the excitation light source 11, it is possible to control ON / OFF of light emission for displaying an image. However, a liquid crystal or the like is provided between the excitation light source 11 and the phosphor layer 12. It is also possible to control ON / OFF of light emission by arranging a layer having a proper shutter function and controlling it. Moreover, it is also possible to control ON / OFF of both the layer having a shutter function such as liquid crystal and the excitation light source 11.
 蛍光体層12は、紫外LED、青色LED、紫外発光無機EL素子、青色発光無機EL素子、紫外発光有機EL素子、青色発光有機EL素子等の発光素子からの励起光を吸収し、赤色、緑色、青色に発光する赤色蛍光体層、緑色蛍光体層、青色蛍光体層から構成されている。
 赤色蛍光体層、緑色蛍光体層および青色蛍光体層は、例えば、平面視矩形状の薄膜からなる。
The phosphor layer 12 absorbs excitation light from light emitting elements such as an ultraviolet LED, a blue LED, an ultraviolet light emitting inorganic EL element, a blue light emitting inorganic EL element, an ultraviolet light emitting organic EL element, and a blue light emitting organic EL element. The red phosphor layer that emits blue light, the green phosphor layer, and the blue phosphor layer.
The red phosphor layer, the green phosphor layer, and the blue phosphor layer are made of, for example, a thin film having a rectangular shape in plan view.
 また、必要に応じて、シアン、イエローに発光する蛍光体を、蛍光体層13を構成する各画素に加えることが好ましい。ここで、シアン、イエローに発光する画素のそれぞれの色純度を、色度図上での赤色、緑色、青色に発光する画素の色純度の点で結ばれる三角形より外側にすることで、赤色、緑色、青色の3原色を発光する画素を使用する表示装置より色再現範囲をさらに拡げることが可能となる。 Further, it is preferable to add phosphors emitting light of cyan and yellow to each pixel constituting the phosphor layer 13 as necessary. Here, by setting the color purity of each pixel emitting light to cyan and yellow outside the triangle connected by the color purity points of red, green, and blue light emitting pixels on the chromaticity diagram, red, The color reproduction range can be further expanded as compared with a display device that uses pixels that emit three primary colors of green and blue.
 蛍光体層12は、以下に例示する蛍光体材料のみから構成されていてもよく、任意に添加剤等を含んでいてもよく、これらの材料が高分子材料(結着用樹脂)または無機材料中に分散された構成であってもよい。
 蛍光体層12を構成する蛍光体材料としては、公知の蛍光体材料を用いることができる。このような蛍光体材料は、有機系蛍光体材料と無機系蛍光体材料に分類される。これらの具体的な化合物を以下に例示するが、本実施形態はこれらの材料に限定されるものではない。
The phosphor layer 12 may be composed of only the phosphor material exemplified below, and may optionally contain additives, etc., and these materials are in a polymer material (binding resin) or an inorganic material. The configuration may be distributed in a distributed manner.
As the phosphor material constituting the phosphor layer 12, a known phosphor material can be used. Such phosphor materials are classified into organic phosphor materials and inorganic phosphor materials. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
 有機系蛍光体材料としては、紫外の励起光を青色発光に変換する青色蛍光色素として、スチルベンゼン系色素:1,4-ビス(2-メチルスチリル)ベンゼン、トランス-4,4’-ジフェニルスチルベンゼン、クマリン系色素:7-ヒドロキシ-4-メチルクマリン、2,3,6,7-テトラヒドロ-11-オキソ-1H,5H,11H-[1]ベンゾピラノ[6,7,8-ij]キノリジン-10-カルボン酸エチル(クマリン314)、10-アセチル-2,3,6,7-テトラヒドロ-1H,5H,11H-[1]ベンゾピラノ[6,7,8-ij]キノリジン-11-オン(クマリン334)、アントラセン系色素:9,10ビス(フェニルエチニル)アントラセン、ペリレン等が挙げられる。 As organic phosphor materials, as blue fluorescent dyes that convert ultraviolet excitation light into blue light emission, stilbenzene dyes: 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstil Benzene, coumarin dyes: 7-hydroxy-4-methylcoumarin, 2,3,6,7-tetrahydro-11-oxo-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolidine- Ethyl 10-carboxylate (coumarin 314), 10-acetyl-2,3,6,7-tetrahydro-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolizin-11-one (coumarin) 334), anthracene dyes: 9,10 bis (phenylethynyl) anthracene, perylene and the like.
  有機系蛍光体材料としては、紫外および青色の励起光を緑色発光に変換する緑色蛍光色素として、クマリン系色素:2,3,5,6-1H、4H-テトラヒドロ-8-トリフロメチルキノリジン(9,9a、1-gh)クマリン(クマリン153)、3-(2’-ベンゾチアゾリル)-7-ジエチルアミノクマリン(クマリン6)、3-(2’-ベンゾイミダゾリル)-7-N,N-ジエチルアミノクマリン(クマリン7)、10‐(ベンゾチアゾール‐2‐イル)‐2,3,6,7‐テトラヒドロ‐1H,5H,11H‐[1]ベンゾピラノ[6,7,8‐ij]キノリジン‐11‐オン(クマリン545)、クマリン545T、クマリン545P、ナフタルイミド系色素:ベーシックイエロー51、ソルベントイエロー11、ソルベントイエロー98、ソルベントイエロー116、ソルベントイエロー43、ソルベントイエロー44、ペリレン系色素:ルモゲンイエロー、ルモゲングリーン、ソルベントグリーン5、フルオレセイン系色素、アゾ系色素、フタロシアニン系色素、アントラキノン系色素、キナクリドン系色素、イソインドリノン系色素、チオインジゴ系色素、ジオキサジン系色素等が挙げられる。 Organic phosphor materials include coumarin dyes: 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine as green fluorescent dyes that convert ultraviolet and blue excitation light into green light emission (9,9a, 1-gh) coumarin (coumarin 153), 3- (2′-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6), 3- (2′-benzoimidazolyl) -7-N, N-diethylaminocoumarin (Coumarin 7), 10- (benzothiazol-2-yl) -2,3,6,7-tetrahydro-1H, 5H, 11H- [1] benzopyrano [6,7,8-ij] quinolizin-11-one (Coumarin 545), coumarin 545T, coumarin 545P, naphthalimide dyes: basic yellow 51, solvent yellow 11, solvent Yellow 98, Solvent Yellow 116, Solvent Yellow 43, Solvent Yellow 44, Perylene dyes: Lumogen Yellow, Lumogen Green, Solvent Green 5, fluorescein dye, azo dye, phthalocyanine dye, anthraquinone dye, quinacridone dye , Isoindolinone dyes, thioindigo dyes, dioxazine dyes and the like.
  有機系蛍光体材料としては、紫外および青色の励起光を赤色発光に変換する赤色蛍光色素として、シアニン系色素:4-ジシアノメチレン-2-メチル-6-(p-ジメチルアミノスチルリル)-4H-ピラン、ピリジン系色素:1-エチル-2-[4-(p-ジメチルアミノフェニル)-1,3-ブタジエニル]-ピリジニウム-パークロレート(ピリジン1)、及びキサンテン系色素:ローダミンB、ローダミン6G、ローダミン3B、ローダミン101、ローダミン110、ベーシックバイオレット11、スルホローダミン101、ベーシックバイオレット11、ベーシックレッド2、ペリレン系色素:ルモゲンオレンジ、ルモゲンピンク、ルモゲンレッド、ソルベントオレンジ55、オキサジン系色素、クリセン系色素、チオフラビン系色素、ピレン系色素、アントラセン系色素、アクリドン系色素、アクリジン系色素、フルオレン系色素、ターフェニル系色素、エテン系色素、ブタジエン系色素、ヘキサトリエン系色素、オキサゾール系色素、クマリン系色素、スチルベン系色素、ジ-およびトリフェニルメタン系色素、チアゾール系色素、チアジン系色素、ナフタルイミド系色素、アントラキノン系色素等が挙げられる。
 各色蛍光体として有機蛍光体材料を用いる場合には、バックライトの青色光または紫外光や外光によって劣化しにくい色素を用いることが望ましい。この点において、耐光性に優れ、高い量子収率を有するペリレン系色素を用いることが特に好ましい。
Organic phosphor materials include cyanine dyes: 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H as red fluorescent dyes that convert ultraviolet and blue excitation light into red light emission. -Pyran, pyridine dye: 1-ethyl-2- [4- (p-dimethylaminophenyl) -1,3-butadienyl] -pyridinium-perchlorate (pyridine 1), and xanthene dye: rhodamine B, rhodamine 6G , Rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101, basic violet 11, basic red 2, perylene dye: lumogen orange, lumogen pink, rumogen red, solvent orange 55, oxazine dye, chrysene dye, Thiofurabi Dye, pyrene dye, anthracene dye, acridone dye, acridine dye, fluorene dye, terphenyl dye, ethene dye, butadiene dye, hexatriene dye, oxazole dye, coumarin dye, stilbene And dyes such as di- and triphenylmethane dyes, thiazole dyes, thiazine dyes, naphthalimide dyes and anthraquinone dyes.
When an organic phosphor material is used as each color phosphor, it is desirable to use a dye that is not easily degraded by blue light, ultraviolet light, or external light of the backlight. In this respect, it is particularly preferable to use a perylene dye having excellent light resistance and a high quantum yield.
  無機系蛍光体材料としては、紫外の励起光を青色の発光に変換する青色蛍光体として、Sr:Sn4+、SrAl1425:Eu2+、BaMgAl1017:Eu2+、SrGa:Ce3+、CaGa:Ce3+、(Ba、Sr)(Mg、Mn)Al1017:Eu2+、(Sr、Ca、Ba、0Mg)10(POCl:Eu2+、BaAlSiO:Eu2+、Sr:Eu2+、Sr(POCl:Eu2+、(Sr,Ca,Ba)(POCl:Eu2+、BaMgAl1627:Eu2+、(Ba,Ca)(POCl:Eu2+、BaMgSi:Eu2+、SrMgSi:Eu2+等が挙げられる。 As an inorganic phosphor material, Sr 2 P 2 O 7 : Sn 4+ , Sr 4 Al 14 O 25 : Eu 2+ , BaMgAl 10 O 17 : Eu are used as blue phosphors that convert ultraviolet excitation light into blue light emission. 2+ , SrGa 2 S 4 : Ce 3+ , CaGa 2 S 4 : Ce 3+ , (Ba, Sr) (Mg, Mn) Al 10 O 17 : Eu 2+ , (Sr, Ca, Ba 2 , 0Mg) 10 (PO 4 ) 6 Cl 2 : Eu 2+ , BaAl 2 SiO 8 : Eu 2+ , Sr 2 P 2 O 7 : Eu 2+ , Sr 5 (PO 4 ) 3 Cl: Eu 2+ , (Sr, Ca, Ba) 5 (PO 4 ) 3 Cl: Eu 2+ , BaMg 2 Al 16 O 27 : Eu 2+ , (Ba, Ca) 5 (PO 4 ) 3 Cl: Eu 2+ , Ba 3 MgSi 2 O 8 : Eu 2+ , Sr 3 MgSi 2 O 8 : Eu 2+ and the like.
  無機系蛍光体材料としては、紫外および青色の励起光を緑色の発光に変換する緑色蛍光体として、(BaMg)Al1627:Eu2+,Mn2+、SrAl1425:Eu2+、(SrBa)Al12Si2:Eu2+、(BaMg)SiO:Eu2+、YSiO:Ce3+,Tb3+、Sr-Sr:Eu2+、(BaCaMg)(POCl:Eu2+、SrSi-2SrCl:Eu2+、ZrSiO、MgAl1119:Ce3+,Tb3+、BaSiO:Eu2+、SrSiO:Eu2+、(BaSr)SiO:Eu2+等が挙げられる。 Examples of inorganic phosphor materials include (BaMg) Al 16 O 27 : Eu 2+ , Mn 2+ , Sr 4 Al 14 O 25 : Eu 2+ , as green phosphors that convert ultraviolet and blue excitation light into green light emission. (SrBa) Al 12 Si 2 O 8 : Eu 2+ , (BaMg) 2 SiO 4 : Eu 2+ , Y 2 SiO 5 : Ce 3+ , Tb 3+ , Sr 2 P 2 O 7 -Sr 2 B 2 O 5 : Eu 2+ , (BaCaMg) 5 (PO 4 ) 3 Cl: Eu 2+ , Sr 2 Si 3 O 8 -2SrCl 2 : Eu 2+ , Zr 2 SiO 4 , MgAl 11 O 19 : Ce 3+ , Tb 3+ , Ba 2 SiO 4 : Eu 2+ , Sr 2 SiO 4 : Eu 2+ , (BaSr) SiO 4 : Eu 2+ and the like.
  無機系蛍光体材料としては、紫外および青色の励起光を赤色の発光に変換する赤色蛍光体として、YS:Eu3+、YAlO:Eu3+、Ca(SiO:Eu3+、LiY(SiO:Eu3+、YVO:Eu3+、CaS:Eu3+、Gd:Eu3+、GdS:Eu3+、Y(P,V)O:Eu3+、MgGeO5.5F:Mn4+、MgGeO:Mn4+、KEu2.5(WO6.25、NaEu2.5(WO6.25、KEu2.5(MoO6.25、NaEu2.5(MoO6.25等が挙げられる。 As an inorganic phosphor material, Y 2 O 2 S: Eu 3+ , YAlO 3 : Eu 3+ , Ca 2 Y 2 (SiO 4 ) 6 is used as a red phosphor that converts ultraviolet and blue excitation light into red light emission. : Eu 3+ , LiY 9 (SiO 4 ) 6 O 2 : Eu 3+ , YVO 4 : Eu 3+ , CaS: Eu 3+ , Gd 2 O 3 : Eu 3+ , Gd 2 O 2 S: Eu 3+ , Y (P, V ) O 4 : Eu 3+ , Mg 4 GeO 5.5 F: Mn 4+ , Mg 4 GeO 6 : Mn 4+ , K 5 Eu 2.5 (WO 4 ) 6.25 , Na 5 Eu 2.5 (WO 4 ) 6.25, K 5 Eu 2.5 (MoO 4) 6.25, Na 5 Eu 2.5 (MoO 4) 6.25 , and the like.
  また、上記無機系蛍光体材料は、必要に応じて表面改質処理が施されていてもよい。表面改質処理の方法としては、シランカップリング剤等の化学的処理によるものや、サブミクロンオーダーの微粒子等の添加による物理的処理によるもの、これらの併用によるもの等が挙げられる。
  また、励起光による劣化、発光による劣化等の安定性を考慮すると、無機系蛍光体材料を使用する方が好ましい。
The inorganic phosphor material may be subjected to surface modification treatment as necessary. Examples of the surface modification treatment include chemical treatment using a silane coupling agent, physical treatment using addition of submicron order fine particles, and combinations thereof.
In consideration of stability such as deterioration due to excitation light and light emission, it is preferable to use an inorganic phosphor material.
  無機系蛍光体材料を用いる場合には、平均粒径(d50)が、0.5~50μmであることが好ましい。無機系蛍光体材料の平均粒径が0.5μm未満であると、蛍光体の発光効率が急激に低下する。また、無機系蛍光体材料の平均粒径が50μmを超えると、平坦化膜を形成することが非常に困難となり、蛍光体層12と励起光源11との間に空隙ができてしまい(励起光源11と蛍光体層12(屈折率:約2.3)との間の空隙(屈折率:1.0))、励起光源11からの光が効率よく蛍光体層12に届かず、蛍光体層12の発光効率が低下するという問題が生じる。さらに、蛍光体層12の平坦化が困難で、液晶層を形成することが不可能となる(液晶層を挟む電極間の距離がバラバラとなり、均一に電界が掛からないため、液晶層が均一に動作しないため等)という問題が生じる。 When an inorganic phosphor material is used, the average particle diameter (d 50 ) is preferably 0.5 to 50 μm. If the average particle size of the inorganic phosphor material is less than 0.5 μm, the luminous efficiency of the phosphor is drastically lowered. If the average particle size of the inorganic phosphor material exceeds 50 μm, it becomes very difficult to form a planarizing film, and a gap is formed between the phosphor layer 12 and the excitation light source 11 (excitation light source). 11 and the phosphor layer 12 (refractive index: about 2.3), the light from the excitation light source 11 does not efficiently reach the phosphor layer 12, and the phosphor layer. There arises a problem that the luminous efficiency of 12 is lowered. Further, it is difficult to flatten the phosphor layer 12 and it becomes impossible to form a liquid crystal layer (the distance between the electrodes sandwiching the liquid crystal layer varies and the electric field is not applied uniformly, so the liquid crystal layer is uniform. The problem of not working etc. occurs.
  また、蛍光体層12は、上記の蛍光体材料と樹脂材料を溶剤に溶解、分散させた蛍光体層形成用塗液を用いて、スピンコーティング法、ディッピング法、ドクターブレード法、吐出コート法、スプレーコート法等の塗布法、インクジェット法、凸版印刷法、凹版印刷法、スクリーン印刷法、マイクログラビアコート法等の印刷法等による公知のウエットプロセス、上記の材料を抵抗加熱蒸着法、電子線(EB)蒸着法、分子線エピタキシー(MBE)法、スパッタリング法、有機気相蒸着(OVPD)法等の公知のドライプロセス、または、レーザー転写法等の形成方法により形成することができる。 The phosphor layer 12 is prepared by using a phosphor layer forming coating solution obtained by dissolving and dispersing the phosphor material and the resin material in a solvent, using a spin coating method, a dipping method, a doctor blade method, a discharge coating method, Known wet processes such as coating methods such as spray coating, ink jet methods, letterpress printing methods, intaglio printing methods, screen printing methods, microgravure coating methods, and the like, and resistance heating vapor deposition method, electron beam ( EB) It can be formed by a known dry process such as a vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor deposition (OVPD) method, or a formation method such as a laser transfer method.
  また、蛍光体層12は、高分子樹脂として、感光性の樹脂を用いることで、フォトリソグラフィー法により、パターニングが可能となる。ここで、感光性樹脂としては、アクリル酸系樹脂、メタクリル酸系樹脂、ポリ桂皮酸ビニル系樹脂、硬ゴム系樹脂等の反応性ビニル基を有する感光性樹脂(光硬化型レジスト材料)の一種類または複数種類の混合物を用いることが可能である。 Moreover, the phosphor layer 12 can be patterned by a photolithography method by using a photosensitive resin as a polymer resin. Here, as the photosensitive resin, a photosensitive resin (photocurable resist material) having a reactive vinyl group such as an acrylic acid resin, a methacrylic acid resin, a polyvinyl cinnamate resin, or a hard rubber resin is used. It is possible to use one kind or a mixture of several kinds.
  また、インクジェット法、凸版印刷法、凹版印刷法、スクリーン印刷法、ディスペンサー法等のウエットプロセス、シャドーマスクを用いた抵抗加熱蒸着法、電子線(EB)蒸着法、分子線エピタキシー(MBE)法、スパッタリング法、有機気相蒸着(OVPD)法等の公知のドライプロセス、または、レーザー転写法等により蛍光体材料をダイレクトにパターニングすることも可能である。 Also, wet process such as ink jet method, relief printing method, intaglio printing method, screen printing method, dispenser method, resistance heating vapor deposition method using shadow mask, electron beam (EB) vapor deposition method, molecular beam epitaxy (MBE) method, It is also possible to directly pattern the phosphor material by a known dry process such as a sputtering method or an organic vapor deposition (OVPD) method, or a laser transfer method.
 バインダー樹脂材料としては、透光性の樹脂であることが好ましい。また、樹脂材料としては、例えば、アクリル樹脂、メラミン樹脂、ポリエステル樹脂、ポリウレタン樹脂、アルキド樹脂、エポキシ樹脂、ブチラール樹脂、ポリシリコーン樹脂、ポリアミド樹脂、ポリイミド樹脂、メラニン樹脂,フェノール樹脂、ポリビニルアルコール,ポリビニルヒドリン,ヒドロキシエチルセルロース,カルボキシルメチルセルロース、芳香族スルホンアミド樹脂、ユリア樹脂、ベンゾグアナミン樹脂、トリアセチルセルロース(TAC)、ポリエーテルサルホン、ポリエーテルケトン、ナイロン、ポリスチレン、メラミンビーズ、ポリカーボネート、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリ酢酸ビニル、ポリエチレン、ポリメタクリル酸メチル、ポリMBS、中密度ポリエチレン、高密度ポリエチレン、テトラフルオロエチレン、ポリ三フッ化塩化エチレン、ポリテトラフルオロエチレン等が挙げられる。 The binder resin material is preferably a translucent resin. Examples of the resin material include acrylic resin, melamine resin, polyester resin, polyurethane resin, alkyd resin, epoxy resin, butyral resin, polysilicone resin, polyamide resin, polyimide resin, melanin resin, phenol resin, polyvinyl alcohol, polyvinyl Hydrine, hydroxyethyl cellulose, carboxymethyl cellulose, aromatic sulfonamide resin, urea resin, benzoguanamine resin, triacetyl cellulose (TAC), polyethersulfone, polyetherketone, nylon, polystyrene, melamine beads, polycarbonate, polyvinyl chloride, Polyvinylidene chloride, polyvinyl acetate, polyethylene, polymethyl methacrylate, poly MBS, medium density polyethylene, high density polyethylene, tetrafluoroethylene Oroechiren, poly trifluorochloroethylene, polytetrafluoroethylene and the like.
  蛍光体層12の膜厚は、通常100nm~100μm程度であるが、1μm~100μmが好ましい。膜厚が100nm未満であると、励起光源11からの発光を十分吸収することが不可能であるため、発光効率が低下したり、必要とされる色に青色の透過光が混じることにより色純度が劣化したりするといった問題が生じる。さらに、励起光源11からの発光の吸収を高め、色純度に悪影響を及ぼさない程度に青色の透過光を低減するためには、膜厚として、1μm以上とすることが好ましい。また、膜厚が100μmを超えると励起光源11からの青色発光を既に十分吸収することから、効率の上昇には繋がらず、材料を消費するだけに留まり、材料コストの増加に繋がる。 The thickness of the phosphor layer 12 is usually about 100 nm to 100 μm, but preferably 1 μm to 100 μm. If the film thickness is less than 100 nm, it is impossible to sufficiently absorb the light emitted from the excitation light source 11, so that the light emission efficiency is reduced, or the required color is mixed with blue transmitted light, resulting in color purity. Problems such as deterioration. Furthermore, in order to increase absorption of light emitted from the excitation light source 11 and reduce blue transmitted light to such an extent that the color purity is not adversely affected, the film thickness is preferably 1 μm or more. Further, when the film thickness exceeds 100 μm, the blue light emission from the excitation light source 11 is already sufficiently absorbed, so that the efficiency is not increased but only the material is consumed and the material cost is increased.
  基板13としては、蛍光体層12からの発光を外部に取り出す必要があることから、蛍光体の発光領域で、発光を透過する必要があり、例えば、ガラス、石英等からなる無機材料基板、ポリエチレンテレフタレート、ポリカルバゾール、ポリイミド等からなるプラスチック基板等が挙げられるが、本実施形態は、これらの基板に限定されるものではない。 Since the substrate 13 needs to emit light emitted from the phosphor layer 12 to the outside, it is necessary to transmit the light emission in the light emitting region of the phosphor. For example, an inorganic material substrate made of glass, quartz, etc., polyethylene Examples include plastic substrates made of terephthalate, polycarbazole, polyimide, and the like, but the present embodiment is not limited to these substrates.
  ストレスなく湾曲部、折り曲げ部を形成することが可能であるという観点から、プラスチック基板を用いることが好ましい。また、ガスバリア性を向上させることができるという観点から、プラスチック基板に無機材料をコートした基板がさらに好ましい。これにより、プラスチック基板を有機EL素子の基板として用いた場合の最大の問題となる水分の透過による有機EL素子の劣化(有機EL素子は、特に低量の水分に対しても劣化することが知られている。)を解消することが可能となる。 It is preferable to use a plastic substrate from the viewpoint that it is possible to form a bent portion or a bent portion without any stress. Further, from the viewpoint that the gas barrier property can be improved, a substrate obtained by coating a plastic substrate with an inorganic material is more preferable. As a result, when the plastic substrate is used as the substrate of the organic EL element, the deterioration of the organic EL element due to the permeation of moisture, which is the biggest problem (the organic EL element is known to deteriorate even with a low amount of moisture, in particular). Can be eliminated.
  配光調整層31は、蛍光体層12と基板13の間に設けられ、蛍光体層12から発光した蛍光のうち、基板13に入射する蛍光の配光プロファイルを変更させる性質を有する層である。配光調整層31は、少なくとも1つ以上の粒子と透光性樹脂とを含む光散乱材料から構成されていてもよい。 The light distribution adjustment layer 31 is provided between the phosphor layer 12 and the substrate 13 and has a property of changing the light distribution profile of the fluorescence incident on the substrate 13 out of the fluorescence emitted from the phosphor layer 12. . The light distribution adjusting layer 31 may be made of a light scattering material containing at least one particle and a light-transmitting resin.
  粒子としては、無機材料、または有機材料のいずれであってもよい。
  粒子として、無機材料を用いる場合には、例えば、ケイ素、チタン、ジルコニウム、アルミニウム、インジウム、亜鉛、錫およびアンチモンからなる群より選ばれる少なくとも1種の金属の酸化物を主成分とした粒子(微粒子)等が挙げられるが、本実施形態は、これらの無機材料に限定されるものではない。
The particles may be either inorganic materials or organic materials.
When an inorganic material is used as the particle, for example, a particle (fine particle) mainly composed of an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin and antimony. However, the present embodiment is not limited to these inorganic materials.
 また、粒子として、無機材料により構成された粒子(無機微粒子)を用いる場合には、例えば、シリカビーズ(屈折率:1.44)、アルミナビーズ(屈折率:1.63)、酸化チタンビーズ(アナタース型の屈折率:2.52、ルチル型の屈折率:2.71)、酸化ジルコニアビーズ(屈折率:2.05)、酸化亜鉛ビーズ(屈折率:2.00)、チタン酸バリウム(BaTiO)(屈折率:2.4)等が挙げられるが、本実施形態は、これらの無機微粒子に限定されるものではない。 Moreover, when using particles (inorganic fine particles) made of an inorganic material as particles, for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), titanium oxide beads ( Anatase type refractive index: 2.52, rutile type refractive index: 2.71), zirconia bead (refractive index: 2.05), zinc oxide beads (refractive index: 2.00), barium titanate (BaTiO) 3 ) (refractive index: 2.4) and the like, but this embodiment is not limited to these inorganic fine particles.
 粒子として、有機材料により構成された粒子(有機微粒子)を用いる場合には、例えば、ポリメチルメタクリレートビーズ(屈折率:1.49)、アクリルビーズ(屈折率:1.50)、アクリル-スチレン共重合体ビーズ(屈折率:1.54)、メラミンビーズ(屈折率:1.57)、高屈折率メラミンビーズ(屈折率:1.65)、ポリカーボネートビーズ(屈折率:1.57)、スチレンビーズ(屈折率:1.60)、架橋ポリスチレンビーズ(屈折率:1.61)、ポリ塩化ビニルビーズ(屈折率:1.60)、メラミンホルムアルデヒドビーズ(屈折率:1.65)、ベンゾグアナミン-メラミンホルムアルデヒドビーズ(屈折率:1.68)、シリコーンビーズ(屈折率:1.50)等が挙げられるが、本実施形態は、これらの有機微粒子に限定されるものではない。 When particles (organic fine particles) composed of an organic material are used as the particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic-styrene Polymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57), styrene beads (Refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), melamine formaldehyde beads (refractive index: 1.65), benzoguanamine-melamine formaldehyde Examples include beads (refractive index: 1.68) and silicone beads (refractive index: 1.50). It is not limited to the organic fine particles.
  透光性樹脂としては、例えば、アクリル樹脂(屈折率:1.49)、メラミン樹脂(屈折率:1.57)、ナイロン(屈折率:1.53)、ポリスチレン(屈折率:1.60)、メラミンビーズ(屈折率:1.57)、ポリカーボネート(屈折率:1.57)、ポリ塩化ビニル(屈折率:1.60)、ポリ塩化ビニリデン(屈折率:1.61)、ポリ酢酸ビニル(屈折率:1.46)、ポリエチレン(屈折率:1.53)、ポリメタクリル酸メチル(屈折率:1.49)、ポリMBS(屈折率:1.54)、中密度ポリエチレン(屈折率:1.53)、高密度ポリエチレン(屈折率:1.54)、テトラフルオロエチレン(屈折率:1.35)、ポリ三フッ化塩化エチレン(屈折率:1.42)、ポリテトラフルオロエチレン(屈折率:1.35)等が挙げられるが、本実施形態は、これらの樹脂に限定されるものではない。 As the translucent resin, for example, acrylic resin (refractive index: 1.49), melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60). , Melamine beads (refractive index: 1.57), polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate ( Refractive index: 1.46), polyethylene (refractive index: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1) .53), high density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), poly (trifluoroethylene chloride) (refractive index: 1.42), polytetrafluoroethylene (refractive index) : .35), and the like, but the present embodiment is not limited to these resins.
 光散乱体材料は、上述した透光性樹脂に粒子を分散させることにより、形成することができる。分散装置には、プロペラ羽根やタービン羽根やバトル羽根などの機構を先端に備えた一般の攪拌装置、或いは、丸鋸の刃を交互に上下へ折り曲げた歯付円板形インペラ機構を先端に備えた高速回転遠心放射型攪拌装置、或いは、超音波エネルギーを集中的に発生させて分散処理を行う超音波乳化分散装置、或いは、容器中にビーズを充填して回転させ、原料を摺りつぶして粉砕・分散を行うビーズミル装置による分散方法などが挙げられるが、これらの方法に限定されるものではない。 The light scatterer material can be formed by dispersing particles in the above-described translucent resin. The disperser is equipped with a general agitator equipped with mechanisms such as propeller blades, turbine blades, and battle blades at the tip, or a toothed disk-shaped impeller mechanism with circular saw blades bent alternately up and down. High-speed rotary centrifugal radiation stirrer, ultrasonic emulsification dispersion device that generates ultrasonic energy intensively for dispersion treatment, or beads filled in a container and rotated to grind and crush raw materials -Although the dispersion method by the bead mill apparatus which performs dispersion | distribution etc. is mentioned, it is not limited to these methods.
 光散乱体材料を構成する粒子の粒径、屈折率、濃度、透光性樹脂の屈折率、及び配光調整層31の膜厚は、蛍光体層12から発光した蛍光の配光プロファイルに応じて最適化するのが好ましい。 The particle size, the refractive index, the concentration, the refractive index of the translucent resin, and the film thickness of the light distribution adjusting layer 31 of the particles constituting the light scatterer material depend on the light distribution profile of the fluorescence emitted from the phosphor layer 12. To optimize.
 例えば、蛍光体層12の配光プロファイルが、視野角0°方向の輝度値に対して、それよりも大きい視野角の輝度値が明らかに高い値を有する場合には、斜め方向成分の輝度値を0°方向の輝度値と同等以下に抑え込む必要があるため、光の波長同程度の粒径を有する粒子を用いる、或いは、粒子の濃度を高くする、或いは、粒子と透光性樹脂のとの屈折率差を大きくする、或いは膜厚を厚くする、ことが好ましい。 For example, when the light distribution profile of the phosphor layer 12 is clearly higher than the luminance value in the direction of the viewing angle of 0 °, the luminance value of the oblique direction component is larger. Therefore, it is necessary to suppress the brightness to a value equal to or less than the luminance value in the 0 ° direction, so that particles having a particle size equivalent to the wavelength of light are used, the concentration of the particles is increased, or the particles and the translucent resin are used. It is preferable to increase the difference in refractive index or increase the film thickness.
 粒子の平均粒径は、150nm~900nmであることがさらに好ましい。これにより、可視光領域全般の光に対して、粒子の粒径は波長と同程度であり、粒子に当たった光は前方散乱と側方散乱が支配的であるミー散乱を起こし、斜め方向に進む光の向きを変更することができる。 The average particle size of the particles is more preferably 150 nm to 900 nm. As a result, the particle size of the particles is about the same as the wavelength with respect to the light in the entire visible light region, and the light hitting the particles causes Mie scattering in which forward scattering and side scattering are dominant, and in an oblique direction. The direction of the traveling light can be changed.
 粒子の透光性樹脂に対する濃度は、0.5wt%~5wt% であることがさらに好ましい。0.5wt%以下になると十分な散乱特性が得られず、結果として斜め方向の光がそのまま抜けてしまう。また、5wt%以上になると、後方散乱光成分が多くなり、結果として透過率が低くなってしまう。 The concentration of the particles with respect to the translucent resin is more preferably 0.5 wt% to 5 wt%. When it is 0.5 wt% or less, sufficient scattering characteristics cannot be obtained, and as a result, light in an oblique direction is lost as it is. On the other hand, if it is 5 wt% or more, the backscattered light component increases, resulting in a low transmittance.
 粒子と、透光性樹脂の屈折率差は、0.05以上であることが更に好ましい。0.05以下になると十分な散乱特性が得られず、結果として斜め方向の光がそのまま抜けてしまう。 More preferably, the difference in refractive index between the particles and the translucent resin is 0.05 or more. If it is 0.05 or less, sufficient scattering characteristics cannot be obtained, and as a result, light in an oblique direction passes through as it is.
 光散乱層31の膜厚は、1um~15um であることが更に好ましい。1um以下になると十分な散乱特性が得られず、結果として斜め方向の光がそのまま抜けてしまう。また、15um以上になると、後方散乱光成分が多くなり、結果として透過率が低くなってしまう。 The film thickness of the light scattering layer 31 is more preferably 1 μm to 15 μm. If it is 1 μm or less, sufficient scattering characteristics cannot be obtained, and as a result, light in an oblique direction passes through as it is. On the other hand, when it is 15 μm or more, the backscattered light component increases, and as a result, the transmittance decreases.
 また、配光調整層31は、上述した粒子と、透光性樹脂から成る構成に限定されるものではなく、例えば、表面にランダムな微細構造を形成することにより、屈折と反射により、入射した光の方向を変えるような層であってもよい。 Further, the light distribution adjustment layer 31 is not limited to the above-described configuration including the particles and the translucent resin. For example, the light distribution adjustment layer 31 is incident by refraction and reflection by forming a random fine structure on the surface. It may be a layer that changes the direction of light.
図3を参照して、発光デバイス30における発光について説明する。
発光デバイス30において、励起光源11から蛍光体層12に励起光を入射すると、蛍光体層12から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、蛍光体層12と基板13との間に設けられた配光調整層31によって、光散乱し、光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。
With reference to FIG. 3, the light emission in the light-emitting device 30 is demonstrated.
In the light emitting device 30, when excitation light enters the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light is scattered by the light distribution adjusting layer 31 provided between the phosphor layer 12 and the substrate 13, and the traveling direction of the light is changed. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない発光デバイスを得ることができる。また、本構成においては、配光調整層31と外部との間に基板13が存在するため、周囲環境変化による配光調整層31の特性への影響を最小限に抑えることができる。 Therefore, the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former. In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to. As a result, a light-emitting device that does not change in brightness when viewed from any direction can be obtained. Further, in this configuration, since the substrate 13 exists between the light distribution adjustment layer 31 and the outside, the influence on the characteristics of the light distribution adjustment layer 31 due to changes in the surrounding environment can be minimized.
(2)第二実施形態
  図4は、る発光デバイスの第二実施形態を示す概略断面図である。図4において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
 発光デバイス40は、励起光を発する励起光源11と、前記励起光源上に前記励起光によって励起され蛍光を発する蛍光体層12と、少なくとも前記蛍光体層12から出射される蛍光の発光方向を変える配光調整層31から概略構成される。
(2) Second Embodiment FIG. 4 is a schematic cross-sectional view showing a second embodiment of the light emitting device. 4, the same components as those of the light emitting device 30 shown in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.
The light emitting device 40 changes an emission direction of fluorescence emitted from the excitation light source 11 that emits excitation light, a phosphor layer 12 that emits fluorescence when excited by the excitation light on the excitation light source, and at least the phosphor layer 12. The light distribution adjusting layer 31 is generally configured.
  図4を参照して、発光デバイス40における発光について説明する。
発光デバイス40において、励起光源11から蛍光体層12に励起光を入射すると、蛍光体層12から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、配光調整層31に入射し、配光調整層31中で、光散乱し、光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。
With reference to FIG. 4, the light emission in the light-emitting device 40 is demonstrated.
In the light emitting device 40, when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない発光デバイスを得ることができる。また、本構成においては、配光調整層31を出た光は、他の層を介することなく、そのまま外部に取り出されるため、配光調整層31の調整のみで発光プロファイルの最適化を図ることができる。 Therefore, the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former. In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to. As a result, a light-emitting device that does not change in brightness when viewed from any direction can be obtained. Further, in this configuration, the light emitted from the light distribution adjustment layer 31 is extracted as it is without passing through other layers, so that the emission profile can be optimized only by adjusting the light distribution adjustment layer 31. Can do.
(3)第三実施形態
  図5は、第三実施形態に係る発光デバイスを示す概略断面図である。図5において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
 発光デバイス50は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層12が形成された基板13と、前記基板13と前記蛍光体層12の間に形成された、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層31と、前記基板13との積層方向に沿った前記蛍光体層12の少なくとも1つ以上の側面に光反射性の障壁51から概略構成される。
(3) Third Embodiment FIG. 5 is a schematic cross-sectional view showing a light emitting device according to a third embodiment. In FIG. 5, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 50 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed opposite to the excitation light source and on which a phosphor layer 12 that is excited by the excitation light and emits fluorescence is formed, the substrate 13, and the substrate At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer. It is generally composed of a light reflective barrier 51 on one or more sides.
 光反射性の障壁51としては、例えば、Al、Ag、Au、Crやその合金などの反射性の金属粉、或いは金属粒子を含有した樹脂から成る反射性の樹脂膜を形成した構造などが挙げられるが、本実施形態は、これらに限定されるものではない。 Examples of the light-reflective barrier 51 include a structure in which a reflective metal powder such as Al, Ag, Au, Cr, or an alloy thereof, or a reflective resin film made of a resin containing metal particles is formed. However, the present embodiment is not limited to these.
 また、障壁51は、少なくとも蛍光体層12と接する部分に光散乱性を有していてもよい。障壁51自体を形成する材料(以下、「障壁材料」と言う。)、あるいは、障壁51の側面に設けられた光散乱層(光散乱膜)を形成する材料(以下、「光散乱膜材料」と言う。)としては、樹脂と光散乱性粒子を含む材料が用いられる。 Further, the barrier 51 may have a light scattering property at least in a portion in contact with the phosphor layer 12. A material for forming the barrier 51 itself (hereinafter referred to as “barrier material”) or a material for forming a light scattering layer (light scattering film) provided on the side surface of the barrier 51 (hereinafter referred to as “light scattering film material”). For example, a material containing a resin and light scattering particles is used.
  樹脂としては、例えば、アクリル樹脂(屈折率:1.49)、メラミン樹脂(屈折率:1.57)、ナイロン(屈折率:1.53)、ポリスチレン(屈折率:1.60)、メラミンビーズ(屈折率:1.57)、ポリカーボネート(屈折率:1.57)、ポリ塩化ビニル(屈折率:1.60)、ポリ塩化ビニリデン(屈折率:1.61)、ポリ酢酸ビニル(屈折率:1.46)、ポリエチレン(屈折率:1.53)、ポリメタクリル酸メチル(屈折率:1.49)、ポリMBS(屈折率:1.54)、中密度ポリエチレン(屈折率:1.53)、高密度ポリエチレン(屈折率:1.54)、テトラフルオロエチレン(屈折率:1.35)、ポリ三フッ化塩化エチレン(屈折率:1.42)、ポリテトラフルオロエチレン(屈折率:1.35)等が挙げられるが、本実施形態は、これらの樹脂に限定されるものではない。 Examples of the resin include acrylic resin (refractive index: 1.49), melamine resin (refractive index: 1.57), nylon (refractive index: 1.53), polystyrene (refractive index: 1.60), melamine beads. (Refractive index: 1.57), polycarbonate (refractive index: 1.57), polyvinyl chloride (refractive index: 1.60), polyvinylidene chloride (refractive index: 1.61), polyvinyl acetate (refractive index: 1.46), polyethylene (refractive index: 1.53), polymethyl methacrylate (refractive index: 1.49), poly MBS (refractive index: 1.54), medium density polyethylene (refractive index: 1.53) , High density polyethylene (refractive index: 1.54), tetrafluoroethylene (refractive index: 1.35), poly (ethylene trifluoride) chloride (refractive index: 1.42), polytetrafluoroethylene (refractive index: 1.2. 3 ) And the like, but the present embodiment is not limited to these resins.
  光散乱性粒子は、無機材料または有機材料のいずれであってもよい。
  光散乱性粒子として、無機材料を用いる場合には、例えば、ケイ素、チタン、ジルコニウム、アルミニウム、インジウム、亜鉛、錫およびアンチモンからなる群より選ばれる少なくとも1種の金属の酸化物を主成分とした粒子(微粒子)等が挙げられるが、本実施形態は、これらの無機材料に限定されるものではない。
The light scattering particles may be either an inorganic material or an organic material.
When an inorganic material is used as the light scattering particle, for example, the main component is an oxide of at least one metal selected from the group consisting of silicon, titanium, zirconium, aluminum, indium, zinc, tin, and antimony. Examples include particles (fine particles), but the present embodiment is not limited to these inorganic materials.
  また、光散乱性粒子として、無機材料により構成された粒子(無機微粒子)を用いる場合には、例えば、シリカビーズ(屈折率:1.44)、アルミナビーズ(屈折率:1.63)、酸化チタンビーズ(アナタース型の屈折率:2.50、ルチル型の屈折率:2.70)、酸化ジルコニアビーズ(屈折率:2.05)、酸化亜鉛ビーズ(屈折率:2.00)、チタン酸バリウム(BaTiO)(屈折率:2.4)等が挙げられるが、本実施形態は、これらの無機微粒子に限定されるものではない。 Further, when particles (inorganic fine particles) made of an inorganic material are used as the light scattering particles, for example, silica beads (refractive index: 1.44), alumina beads (refractive index: 1.63), oxidation Titanium beads (anatase type refractive index: 2.50, rutile type refractive index: 2.70), zirconia oxide beads (refractive index: 2.05), zinc oxide beads (refractive index: 2.00), titanic acid barium (BaTiO 3) (refractive index: 2.4), but like the present embodiment is not limited to these inorganic fine particles.
  光散乱性粒子として、有機材料により構成された粒子(有機微粒子)を用いる場合には、例えば、ポリメチルメタクリレートビーズ(屈折率:1.49)、アクリルビーズ(屈折率:1.50)、アクリル-スチレン共重合体ビーズ(屈折率:1.54)、メラミンビーズ(屈折率:1.57)、高屈折率メラミンビーズ(屈折率:1.65)、ポリカーボネートビーズ(屈折率:1.57)、スチレンビーズ(屈折率:1.60)、架橋ポリスチレンビーズ(屈折率:1.61)、ポリ塩化ビニルビーズ(屈折率:1.60)、ベンゾグアナミン-メラミンホルムアルデヒドビーズ(屈折率:1.68)、シリコーンビーズ(屈折率:1.50)等が挙げられるが、本実施形態は、これらの有機微粒子に限定されるものではない。 When particles (organic fine particles) made of an organic material are used as the light scattering particles, for example, polymethyl methacrylate beads (refractive index: 1.49), acrylic beads (refractive index: 1.50), acrylic -Styrene copolymer beads (refractive index: 1.54), melamine beads (refractive index: 1.57), high refractive index melamine beads (refractive index: 1.65), polycarbonate beads (refractive index: 1.57) Styrene beads (refractive index: 1.60), crosslinked polystyrene beads (refractive index: 1.61), polyvinyl chloride beads (refractive index: 1.60), benzoguanamine-melamine formaldehyde beads (refractive index: 1.68) And silicone beads (refractive index: 1.50), and the like, but this embodiment is not limited to these organic fine particles.
  障壁材料および光散乱膜材料は、光重合開始剤、ジプロピレングリコールモノメチルエーテル、1-(2-メトキシ-2-メチルエトキシ)-2-プロパノール等の消泡剤・レベリング剤を含んでいてもよい。 The barrier material and the light scattering film material may contain an antifoaming agent / leveling agent such as a photopolymerization initiator, dipropylene glycol monomethyl ether, and 1- (2-methoxy-2-methylethoxy) -2-propanol. .
  さらに、障壁51は、白色であってもよい。具体的には、障壁材料および光散乱膜材料が、白色レジストを含んでいてもよい。
  白色レジストとしては、例えば、芳香環を有しないカルボキシル基含有樹脂、光重合開始剤、水添エポキシ化合物、ルチル型酸化チタンおよび希釈剤を含む材料等が挙げられる。
Furthermore, the barrier 51 may be white. Specifically, the barrier material and the light scattering film material may contain a white resist.
Examples of the white resist include a carboxyl group-containing resin having no aromatic ring, a photopolymerization initiator, a hydrogenated epoxy compound, a rutile type titanium oxide, and a material containing a diluent.
  障壁材料を構成する樹脂としてアルカリ可溶性樹脂を選択し、光重合性モノマー、光重合開始剤、溶剤等を添加することによって、障壁材料および光散乱膜材料をフォトレジスト化することができ、障壁15または障壁15の側面に設けられた光散乱層を、フォトリソグラフィー法によってパターニングすることが可能となる。 By selecting an alkali-soluble resin as the resin constituting the barrier material and adding a photopolymerizable monomer, a photopolymerization initiator, a solvent, etc., the barrier material and the light scattering film material can be made into a photoresist. Alternatively, the light scattering layer provided on the side surface of the barrier 15 can be patterned by photolithography.
  図5を参照して、発光デバイス50における発光について説明する。
  発光デバイス50において、励起光源11から蛍光体層12に励起光を入射すると、蛍光体層12から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、配光調整層31に入射し、配光調整層31中で、光散乱し、光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。
With reference to FIG. 5, the light emission in the light-emitting device 50 is demonstrated.
In the light emitting device 50, when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない発光デバイスを得ることができる。また、本構成においては、蛍光体層12の側面に光反射性の障壁51が設けられているため、蛍光体層12から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層12の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。 Therefore, the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former. In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to. As a result, a light-emitting device that does not change in brightness when viewed from any direction can be obtained. Further, in this configuration, since the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence The fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side.
  つまり、光反射性を有する障壁51を蛍光体層12の側面に設けることによって、蛍光体層12から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、ここで障壁51の蛍光体層12と接する部分が光散乱性を有する場合、例えば、一度基板で全反射された蛍光成分が障壁51で反射され再び基板に再入射する場合、まず、基板13で全反射され障壁51に入射する蛍光成分は、その入射角と異なった角度で障壁51で反射(散乱)され、一度目とは異なった角度で基板に入射するため、再び基板13で全反射される可能性は少なく、外部に取出すことが可能となる。つまり、光散乱性を有する障壁51を蛍光体層12の側面に設けることによって、蛍光体層12から発光した蛍光成分をさらに効率良く外部に取り出すことが可能となる。 That is, by providing the light-reflective barrier 51 on the side surface of the phosphor layer 12, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer 12 to the outside. If the portion of the barrier 51 in contact with the phosphor layer 12 has light scattering properties, for example, when the fluorescent component that has been totally reflected once by the substrate is reflected by the barrier 51 and reenters the substrate, first, the substrate The fluorescent component totally reflected at 13 and incident on the barrier 51 is reflected (scattered) by the barrier 51 at an angle different from the incident angle and is incident on the substrate at an angle different from the first angle. There is little possibility of being reflected, and it can be taken out to the outside. That is, by providing the light-scattering barrier 51 on the side surface of the phosphor layer 12, the fluorescent component emitted from the phosphor layer 12 can be taken out more efficiently.
(4)第四実施形態
 図6は、第四実施形態に係る発光デバイスを示す概略断面図である。図6において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス60は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層12が形成された基板13と、前記基板13と前記蛍光体層12の間に形成された、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層31と、前記基板13との積層方向に沿った前記蛍光体層12の少なくとも1つ以上の側面に光反射性の障壁51と、蛍光体層12における、励起光を入射させる入射面側に形成された波長選択透過反射層61とから概略構成されている。
(4) Fourth Embodiment FIG. 6 is a schematic cross-sectional view showing a light emitting device according to a fourth embodiment. In FIG. 6, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 60 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed to face the excitation light source, and is formed with a phosphor layer 12 that is excited by the excitation light and emits fluorescence. At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer. A light-reflective barrier 51 is formed on one or more side surfaces, and a wavelength selective transmission / reflection layer 61 formed on the phosphor layer 12 on the incident surface side on which excitation light is incident.
すなわち、波長選択透過反射層61は、蛍光体層12の励起光の入射面上、および障壁51の上面上に設けられ、励起光源11からの励起光のピーク波長にあたる光を少なくとも透過し、蛍光体層12の発光ピーク波長にあたる光を少なくとも反射させる特性を有する層である。 That is, the wavelength selective transmission / reflection layer 61 is provided on the incident surface of the excitation light of the phosphor layer 12 and the upper surface of the barrier 51, and transmits at least light corresponding to the peak wavelength of the excitation light from the excitation light source 11. It is a layer having a characteristic of reflecting at least light corresponding to the emission peak wavelength of the body layer 12.
  蛍光体層12から全方向に等方的に発光する蛍光のうち、発光デバイス60の背面側へ向かう蛍光成分を、蛍光体層12の入射面に設けられた波長選択透過反射層61により、効率的に正面方向に反射させることが可能となり、発光効率を向上させることが可能となる。 Of the fluorescence emitted isotropically in all directions from the phosphor layer 12, the fluorescent component directed toward the back side of the light emitting device 60 is efficiently transmitted by the wavelength selective transmission / reflection layer 61 provided on the incident surface of the phosphor layer 12. Therefore, the light can be reflected in the front direction, and the light emission efficiency can be improved.
波長選択透過反射層61としては、例えば、誘電体多層膜、金属薄膜ガラス、石英等からなる無機材料基板、ポリエチレンテレフタレート、ポリカルバゾール、ポリイミド等からなるプラスチック基板等が挙げられるが、本実施形態は、これらの基板に限定されるものではない。 Examples of the wavelength selective transmission / reflection layer 61 include a dielectric multilayer film, a metal thin film glass, an inorganic material substrate made of quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like. However, it is not limited to these substrates.
  図6を参照して、発光デバイス60における発光について説明する。
  発光デバイス60において、励起光源11から蛍光体層12に励起光を入射すると、蛍光体層12から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、配光調整層31に入射し、配光調整層31中で、光散乱し、光の進行方向が変わる。この時、光散乱層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。
With reference to FIG. 6, the light emission in the light-emitting device 60 is demonstrated.
In the light emitting device 60, when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light. At this time, the light path length in the light distribution adjusting layer 31 is longer in the light distribution layer 31 for light incident perpendicularly to the surface of the light scattering layer 31 and light incident in an oblique direction.
  従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない発光デバイスを得ることができる。また、本構成においては、蛍光体層12の側面に光反射性の障壁51が設けられているため、蛍光体層12から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層12の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。 Therefore, the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former. In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to. As a result, a light-emitting device that does not change in brightness when viewed from any direction can be obtained. Further, in this configuration, since the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence The fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side.
  つまり、光反射性を有する障壁51を蛍光体層12の側面に設けることによって、蛍光体層12から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層12における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層12の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層12と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層12における、励起光を入射させる入射面側に設けることによって、蛍光体層12から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 That is, by providing the light-reflective barrier 51 on the side surface of the phosphor layer 12, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer 12 to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer 12, the opposite side (rear side) of the phosphor layer 12 to the light extraction side. The fluorescent component that emits light is reflected at the interface between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the incident surface side of the phosphor layer 12 where the excitation light is incident, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. .
(5)第五実施形態
 図7は、第五実施形態に係る発光デバイスを示す概略断面図である。図7において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス70は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層12が形成された基板13と、前記基板13と前記蛍光体層12の間に形成された、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層31と、前記基板13との積層方向に沿った前記蛍光体層12の少なくとも1つ以上の側面に光反射性の障壁51と、蛍光体層12における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層12と前記波長選択透過反射層61の間に、前記蛍光体層12よりも屈折率の小さい低屈折率層71とから概略構成されている。
(5) Fifth Embodiment FIG. 7 is a schematic cross-sectional view showing a light emitting device according to a fifth embodiment. In FIG. 7, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 70 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed opposite to the excitation light source, and is formed with a phosphor layer 12 that is excited by the excitation light and emits fluorescence. At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer. A light-reflective barrier 51 on one or more side surfaces, a wavelength selective transmission / reflection layer 61 formed on the incident surface side of the phosphor layer 12 on which excitation light is incident, the phosphor layer 12 and the wavelength selective transmission Between the reflective layers 61, a low refractive index layer 71 having a refractive index smaller than that of the phosphor layer 12 is schematically configured.
  即ち、低屈折率層71は、蛍光体層12と波長選択透過反射層61の間に設けられ、蛍光体層から発光した蛍光の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を少なくとも反射させる特徴を有する層である。
  蛍光体層12から全方向に等方的に発光する蛍光のうち、発光デバイス70の背面側へ向かう蛍光成分を、蛍光体層12と波長選択透過反射層61の間に設けられた低屈折率層71により、効率的に正面方向に反射させることが可能となり、発光効率を向上させることが可能となる。
That is, the low refractive index layer 71 is provided between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and out of the fluorescence emitted from the phosphor layer, the critical angle of the interface between the phosphor layer and the low refractive index layer is greater than the critical angle. And a layer having a feature of reflecting at least the fluorescence incident on the interface.
Of the fluorescence emitted isotropically in all directions from the phosphor layer 12, a fluorescent component directed to the back side of the light emitting device 70 is a low refractive index provided between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61. The layer 71 can be efficiently reflected in the front direction, and the light emission efficiency can be improved.
  低屈折率層71としては、例えば、屈折率1.35~1.4程度のフッ素樹脂、屈折率1.4~1.5程度のシリコーン樹脂、屈折率1.003~1.3程度のシリカエアロゲル、屈折率1.2~1.3程度の多孔質シリカ等の透明材料が挙げられるが、本実施形態は、これらの材料に限定されるものではない。 Examples of the low refractive index layer 71 include a fluorine resin having a refractive index of about 1.35 to 1.4, a silicone resin having a refractive index of about 1.4 to 1.5, and a silica having a refractive index of about 1.003 to 1.3. Examples include airgel and transparent materials such as porous silica having a refractive index of about 1.2 to 1.3. However, the present embodiment is not limited to these materials.
  低屈折率層71の屈折率は低いほど望ましく、屈折率を低下させるために、低屈折率層71中に空孔や空隙を存在させるために、低屈折率層71は、シリカエアロゲルや多孔質シリカ等によって形成されたものがより好ましい。シリカエアロゲルは屈折率が非常に低いので特に好ましい。 The refractive index of the low refractive index layer 71 is preferably as low as possible. To lower the refractive index, the low refractive index layer 71 is made of silica airgel or porous material in order to have pores or voids in the low refractive index layer 71. Those formed of silica or the like are more preferable. Silica airgel is particularly preferred because it has a very low refractive index.
  シリカエアロゲルは、例えば、米国特許第4402827号公報、日本国特許公報「特許第4279971号」、日本国公開特許公報「特開2001-202827」等に開示されているように、アルコキシランの加水分解、重合反応によって得られたシリカ骨格からなる湿潤状態のゲル状化合物を、アルコールあるいは二酸化炭素等の溶媒の存在下、この溶媒の臨界点以上の超臨界状態で乾燥することによって製造される。 Silica airgel is disclosed in, for example, US Pat. No. 4,402,827, Japanese Patent Publication “Patent No. 4279971”, Japanese Published Patent Publication “JP-A 2001-202827” and the like. It is produced by drying a gel compound in a wet state comprising a silica skeleton obtained by a polymerization reaction in the presence of a solvent such as alcohol or carbon dioxide in a supercritical state above the critical point of the solvent.
また、低屈折率層71は、気体からなることが好ましい。上述したように、低屈折率層71の屈折率は低いほど望ましいが、固体、液体、ゲル等の材料により低屈折率層71を形成した場合、米国特許第4402827号公報、日本国特許公報「特許第4279971号」、日本国公開特許公報「特開2001-202827」等に記載されているように、その屈折率の下限値は1.003程度が限界である。これに対して、低屈折率層16を、例えば、酸素や窒素等の気体からなる気体層とすれば、屈折率を1.0とすることが可能となり、非常に効率よく蛍光を外部に取り出すことが可能となる。 The low refractive index layer 71 is preferably made of a gas. As described above, the refractive index of the low refractive index layer 71 is preferably as low as possible. However, when the low refractive index layer 71 is formed of a material such as a solid, liquid, or gel, US Pat. No. 4,402,827 and Japanese Patent Publication “ As described in Japanese Patent No. 4279971 ”, Japanese Patent Application Publication“ JP-A 2001-202827 ”and the like, the lower limit of the refractive index is about 1.003. On the other hand, if the low refractive index layer 16 is a gas layer made of a gas such as oxygen or nitrogen, for example, the refractive index can be set to 1.0, and the fluorescence is extracted to the outside very efficiently. It becomes possible.
  図7を参照して、発光デバイス70における発光について説明する。
  発光デバイス70において、励起光源11から蛍光体層12に励起光を入射すると、蛍光体層12から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、配光調整層31に入射し、配光調整層31中で、光散乱し、光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。
With reference to FIG. 7, the light emission in the light-emitting device 70 is demonstrated.
In the light emitting device 70, when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction.
  従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない発光デバイスを得ることができる。また、本構成においては、蛍光体層12の側面に光反射性の障壁51が設けられているため、蛍光体層12から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層12の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。 Therefore, the latter light is often scattered in the light distribution adjusting layer 31 with respect to the former. In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to. As a result, a light-emitting device that does not change in brightness when viewed from any direction can be obtained. Further, in this configuration, since the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence The fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side.
  つまり、光反射性を有する障壁51を蛍光体層12の側面に設けることによって、蛍光体層12から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層12における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層12の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層12と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層12における、励起光を入射させる入射面側に設けることによって、蛍光体層12から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 That is, by providing the light-reflective barrier 51 on the side surface of the phosphor layer 12, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer 12 to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer 12, the opposite side (rear side) of the phosphor layer 12 to the light extraction side. The fluorescent component that emits light is reflected at the interface between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the incident surface side of the phosphor layer 12 where the excitation light is incident, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. .
  また、本構造においては、蛍光体層12と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層12の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層12と波長選択透過反射層61の間に設けることによって、蛍光体層12から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the low refractive index layer 71 is provided between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, the phosphor layer 12 is on the opposite side (back side) to the light extraction side. Among the fluorescent components that emit light, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently.
(6)第六実施形態
 図8は、第六実施形態の発光デバイスを示す概略断面図である。図8において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス80は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層12が形成された基板13と、前記基板13と前記蛍光体層12の間に形成された、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層31と、前記基板13との積層方向に沿った前記蛍光体層12の少なくとも1つ以上の側面に光反射性の障壁51と、蛍光体層12における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層12と前記波長選択透過反射層61の間に、前記蛍光体層12よりも屈折率の小さい低屈折率層71と、前記配光調性層31と前記蛍光体層12の間に、前記蛍光体層12よりも屈折率の小さい低屈折率層81とから概略構成されている。
(6) Sixth Embodiment FIG. 8 is a schematic cross-sectional view showing a light emitting device of a sixth embodiment. 8, the same components as those of the light emitting device 30 shown in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.
The light-emitting device 80 includes an excitation light source 11 that emits excitation light, a substrate 13 that is disposed opposite to the excitation light source and on which a phosphor layer 12 that is excited by the excitation light and emits fluorescence is formed. At least the phosphor layer 12 along the stacking direction of the substrate 13 and the light distribution adjustment layer 31 that is formed between the phosphor layers 12 and changes the emission direction of at least fluorescence emitted from the phosphor layer. A light-reflective barrier 51 on one or more side surfaces, a wavelength selective transmission / reflection layer 61 formed on the phosphor layer 12 on the incident surface side on which excitation light is incident, the phosphor layer 12 and the wavelength selective transmission Between the reflective layer 61, the low refractive index layer 71 having a smaller refractive index than the phosphor layer 12, and between the light distribution layer 31 and the phosphor layer 12 refracted more than the phosphor layer 12. Such as a low refractive index layer 81 with a low refractive index. It is schematic configuration.
  即ち、低屈折率層81は、配光調整層31と蛍光体層12の間に設けられ、蛍光体層から発光した蛍光の内、蛍光体層31と低屈折率層81の界面の臨界角以上で、前記界面に入射する蛍光を少なくとも反射させることにより、蛍光体層12から基板13に入射するものの、基板から外部に取り出すことが出来ず、基板13内を導波し、最終的にロスする成分を抑制することを特徴とする層である。
  蛍光体層12から全方向に等方的に発光する蛍光のうち、発光デバイス80の正面側へ向かう蛍光成分を、配光調性層31と蛍光体層12の間に設けられた低屈折率層81により、効率的に取り出すことが可能となり、発光効率を向上させることが可能となる。
That is, the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layer 12, and the critical angle at the interface between the phosphor layer 31 and the low refractive index layer 81 among the fluorescence emitted from the phosphor layer. As described above, by reflecting at least the fluorescence incident on the interface, it is incident on the substrate 13 from the phosphor layer 12 but cannot be taken out from the substrate. It is a layer characterized by suppressing the component which carries out.
Of the fluorescence emitted isotropically in all directions from the phosphor layer 12, a fluorescent component directed to the front side of the light emitting device 80 is a low refractive index provided between the light distribution control layer 31 and the phosphor layer 12. The layer 81 can be efficiently taken out, and the light emission efficiency can be improved.
  図8を参照して、発光デバイス80における発光について説明する。
発光デバイス70において、励起光源11から蛍光体層12に励起光を入射すると、蛍光体層12から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、配光調整層31に入射し、配光調整層31中で、光散乱し、光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層31内でよく散乱される。
With reference to FIG. 8, the light emission in the light-emitting device 80 is demonstrated.
In the light emitting device 70, when excitation light is incident on the phosphor layer 12 from the excitation light source 11, light is emitted from the phosphor layer 12 isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer 31 and is scattered in the light distribution adjustment layer 31 to change the traveling direction of the light. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31.
  つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない発光デバイスを得ることができる。また、本構成においては、蛍光体層12の側面に光反射性の障壁51が設けられているため、蛍光体層12から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層12の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、光反射性を有する障壁51を蛍光体層12の側面に設けることによって、蛍光体層12から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. be able to. As a result, a light-emitting device that does not change in brightness when viewed from any direction can be obtained. Further, in this configuration, since the light-reflective barrier 51 is provided on the side surface of the phosphor layer 12, among the fluorescence emitted from the phosphor layer 12, the fluorescence component reflected at the interface of the substrate 13 and the fluorescence The fluorescent component that emits light on the side opposite to the light extraction side of the body layer 12 is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 on the side surface of the phosphor layer 12, the fluorescent component emitted from the phosphor layer 12 can be efficiently extracted outside.
  また、本構造においては、蛍光体層12における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層12の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層12と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層12における、励起光を入射させる入射面側に設けることによって、蛍光体層12から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層12と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層12の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。 Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer 12, the opposite side (rear side) of the phosphor layer 12 to the light extraction side. The fluorescent component that emits light is reflected at the interface between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the incident surface side of the phosphor layer 12 where the excitation light is incident, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. . Further, in this structure, since the low refractive index layer 71 is provided between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, the phosphor layer 12 is on the opposite side (back side) to the light extraction side. Among the fluorescent components that emit light, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side.
  一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層12と波長選択透過反射層61の間に設けることによって、蛍光体層12から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。また、本構造においては、配光調整層31と蛍光体層12の間に、低屈折率層81が設けられているため、蛍光体層12の光取り出し側に発光する蛍光成分の内、蛍光体層12と低屈折率層81の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層31から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板13には入射したものの、基板13と外部との界面で反射され外部に取り出すことができず、基板13内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層12の間に設けることによって、蛍光体層12から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layer 12 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer 12 can be extracted to the outside very efficiently. Further, in this structure, since the low refractive index layer 81 is provided between the light distribution adjustment layer 31 and the phosphor layer 12, among the fluorescent components that emit light on the light extraction side of the phosphor layer 12, fluorescence By reflecting the fluorescence incident on the interface at a critical angle equal to or greater than the critical angle of the interface between the body layer 12 and the low refractive index layer 81, the fluorescence component emitted from the phosphor layer 31 at a shallow angle is prevented from entering the substrate. be able to. That is, it is possible to suppress a loss component that is incident on the substrate 13 but is reflected at the interface between the substrate 13 and the outside and cannot be extracted to the outside and is guided in the substrate 13. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layer 12, the fluorescent component emitted from the phosphor layer 12 can be extracted outside without loss.
(7)第七実施形態
 図9は、第七実施形態に係る発光デバイスを示す概略断面図である。図9において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス90は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、蛍光体層91~93の間に形成された、少なくとも前記蛍光体層91~93から出射される蛍光の発光方向を変える配光調整層31と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層31と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81とから概略構成されている。
(7) Seventh Embodiment FIG. 9 is a schematic cross-sectional view showing a light emitting device according to a seventh embodiment. In FIG. 9, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 90 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. The substrate 13 on which the third phosphor layer 93 is formed, and the emission direction of the fluorescence emitted from at least the phosphor layers 91 to 93 formed between the substrate 13 and the phosphor layers 91 to 93. The light distribution adjusting layer 31 that changes the light intensity, the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the incident surfaces on which the excitation light is incident on the phosphor layers 91 to 93 A wavelength selective transmission / reflection layer 61 formed on the side, and between the phosphor layers 91 to 93 and the wavelength selection transmission / reflection layer 61, a low refractive index layer 71 having a smaller refractive index than the phosphor layers 91 to 93. And the light distribution layer 31 and the fluorescence Between the layers 91-93 are schematic configuration of a small low-refractive index layer 81. refractive index than the phosphor layer 91-93.
  図9を参照して、発光デバイス90における発光について説明する。
  発光デバイス90において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 9, the light emission in the light-emitting device 90 is demonstrated.
In the light emitting device 90, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、が配光調整層31に入射すると、入射した蛍光は配光調整層31内で、光散乱により光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. Fluorescent components emitted from the first fluorescent layer 91, fluorescent components emitted from the second fluorescent layer 92, and fluorescent components emitted from the third fluorescent layer 93, which have different emission profiles, enter the light distribution adjustment layer 31. Then, the incident fluorescence changes in the light distribution adjusting layer 31 due to light scattering. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31. In other words, a light emission profile in which the luminance increases as the viewing angle increases has a light emission profile in which the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. The fluorescent component is extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層91~93と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層91~93の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層91~93から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the low refractive index layer 71 is provided between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the side opposite to the light extraction side of the phosphor layers 91 to 93 ( Of the fluorescent components emitted on the back side), the fluorescent light incident on the interface is reflected at an angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, and is effectively extracted to the outside as light emission on the light extraction side. Can do. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out very efficiently to the outside. It becomes possible.
  また、本構造においては、配光調整層31と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layers 91 to 93, the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided. Among them, by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
(8)第八実施形態
 図10は、第八実施形態に係る発光デバイスを示す概略断面図である。図10において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス100は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、蛍光体層91~93の間に形成された、少なくとも前記蛍光体層91~93から出射される蛍光の発光方向を変える配光調整層31と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層31と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81とから概略構成されており、前記配光調整層31は、前記障壁51と前記基板13上に広がるように形成されている。
(8) Eighth Embodiment FIG. 10 is a schematic cross-sectional view showing a light emitting device according to an eighth embodiment. In FIG. 10, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 100 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed opposite to the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. The emission direction of fluorescence emitted from at least the phosphor layers 91 to 93 formed between the substrate 13 on which the third phosphor layer 93 is formed, and the substrate 13 and the phosphor layers 91 to 93. The light distribution adjusting layer 31 for changing the light intensity, the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the incident surfaces on which the excitation light is incident on the phosphor layers 91 to 93 The wavelength selective transmission / reflection layer 61 formed on the side, and the low refractive index layer 71 having a smaller refractive index than the phosphor layers 91 to 93 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61. The light distribution layer 31 and the firefly Between the body layers 91 to 93, a low refractive index layer 81 having a refractive index smaller than that of the phosphor layers 91 to 93 is roughly configured. The light distribution adjusting layer 31 includes the barrier 51 and the substrate 13. It is formed so as to spread upward.
  図10を参照して、発光デバイス100における発光について説明する。
  発光デバイス100において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 10, the light emission in the light-emitting device 100 is demonstrated.
In the light emitting device 100, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、が配光調整層31に入射すると、入射した蛍光は配光調整層31内で、光散乱により光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. Fluorescent components emitted from the first fluorescent layer 91, fluorescent components emitted from the second fluorescent layer 92, and fluorescent components emitted from the third fluorescent layer 93, which have different emission profiles, enter the light distribution adjustment layer 31. Then, the incident fluorescence changes in the light distribution adjusting layer 31 due to light scattering. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31. In other words, a light emission profile in which the luminance increases as the viewing angle increases has a light emission profile in which the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. The fluorescent component is extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層91~93と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層91~93の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。 Further, in this structure, since the low refractive index layer 71 is provided between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the side opposite to the light extraction side of the phosphor layers 91 to 93 ( Of the fluorescent components emitted on the back side), the fluorescent light incident on the interface is reflected at an angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, and is effectively extracted to the outside as light emission on the light extraction side. Can do. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled.
  つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層91~93から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。また、本構造においては、配光調整層31と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out very efficiently to the outside. It becomes possible. In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layers 91 to 93, the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided. Among them, by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  また、本構造においては、前記蛍光体層91~93の側面には、前記障壁51との間に前記配光調整層31が形成されているため、前記蛍光体層91~93から側方に発光した蛍光成分は、前記障壁51に入射する前に、前記蛍光成分の一部は前記配光調整層31で後方散乱(反射)させることができる。つまり、前記配光調整層13を介することによって前記障壁の反射能力を増強させることができ、前記障壁51に入射した光が前記障壁51を透過し、隣接画素に侵入することを防止することができる。また、光取出し方向から見て、配光調整層は障壁によって仕切られているため、配光調整層を導波して隣接画素に光が侵入することを防止することもできる。 Further, in this structure, since the light distribution adjusting layer 31 is formed between the barrier layers 51 on the side surfaces of the phosphor layers 91 to 93, the phosphor layers 91 to 93 laterally extend from the phosphor layers 91 to 93. Before the emitted fluorescent component enters the barrier 51, a part of the fluorescent component can be backscattered (reflected) by the light distribution adjusting layer 31. In other words, the reflecting ability of the barrier can be enhanced through the light distribution adjusting layer 13, and light incident on the barrier 51 can be prevented from passing through the barrier 51 and entering an adjacent pixel. it can. In addition, since the light distribution adjustment layer is partitioned by a barrier when viewed from the light extraction direction, it is possible to prevent light from entering the adjacent pixels through the light distribution adjustment layer.
(9)第九実施形態
  図11は、第九実施形態に係る発光デバイスを示す概略断面図である。図11において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス110は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、第一の蛍光体層91の間に形成された、少なくとも前記蛍光体層91から出射される蛍光の発光方向を変える配光調整層111と、第二の蛍光体層92の間に形成された、少なくとも前記蛍光体層92から出射される蛍光の発光方向を変える配光調整層112と、第三の蛍光体層93の間に形成された、少なくとも前記蛍光体層93から出射される蛍光の発光方向を変える配光調整層113と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層111~113と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81とから概略構成されている。
(9) Ninth Embodiment FIG. 11 is a schematic sectional view showing a light emitting device according to the ninth embodiment. In FIG. 11, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 110 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. The emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91; A light distribution adjustment layer 112 which is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and which changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other. Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and between the light distribution control layers 111 to 113 and the phosphor layers 91 to 93, a low refractive index having a refractive index lower than that of the phosphor layers 91 to 93. The refractive index layer 81 is generally configured.
  図11を参照して、発光デバイス110における発光について説明する。
  発光デバイス110において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 11, the light emission in the light-emitting device 110 is demonstrated.
In the light emitting device 110, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、がそれぞれ配光調整層111、配光調整層112、配光調整層113に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. The light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively. When the light enters the light distribution adjusting layer 112 and the light distribution adjusting layer 113, the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  また、本構造においては、配光調整層111~113と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。また、本構造においては、光取出し方向から見て、配光調整層は障壁によって仕切られているため、配光調整層を導波して隣接画素に光が侵入することを防止することもできる。 In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layers 111 to 113 and the phosphor layers 91 to 93, light is emitted to the light extraction side of the phosphor layers 91 to 93. Among the fluorescent components, the fluorescent component emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become. In addition, in this structure, the light distribution adjustment layer is partitioned by a barrier when viewed from the light extraction direction, so that light can be prevented from entering the adjacent pixels by being guided through the light distribution adjustment layer. .
 配光調整層の光散乱体材料を構成する粒子の粒径は、蛍光体層から発光した蛍光の波長に応じて最適化するのが好ましい。 It is preferable to optimize the particle size of the light scatterer material of the light distribution adjusting layer according to the wavelength of the fluorescence emitted from the phosphor layer.
 一般的に、粒子の散乱特性を決定する散乱強度パラメータは、粒子の屈折率と粒子の周囲を取り巻く環境の屈折率の差、粒径パラメータα(α=πD/λ[D:粒子の粒子直径、λ:光の波長])、および散乱角θ(粒子に入射した入射光と粒子に当たって散乱した散乱光の成す角)の関係で表わされる。この中で、散乱特性に大きく影響するのは粒径パラメータαである。α<1の場合、散乱強度分布は、前方散乱(θ=0°前後)と後方散乱(θ=180°前後)が支配的であり、側方(θ=90°前後)には殆ど散乱しない、いわゆるレイリー散乱の領域となる。また、α≒1の場合、前方散乱と側方散乱が支配的であり、後方には殆ど散乱しない、いわゆるミー散乱の領域となる。 Generally, the scattering intensity parameter that determines the scattering characteristics of a particle is the difference between the refractive index of the particle and the refractive index of the environment surrounding the particle, the particle size parameter α (α = πD / λ [D: particle diameter of the particle). , Λ: wavelength of light]), and a scattering angle θ (an angle formed by incident light incident on the particle and scattered light scattered by the particle). Among these, the particle size parameter α greatly affects the scattering characteristics. When α <1, the scattering intensity distribution is dominated by forward scattering (around θ = 0 °) and backward scattering (around θ = 180 °), and hardly scatters to the side (around θ = 90 °). This is a so-called Rayleigh scattering region. Further, in the case of α≈1, forward scattering and side scattering are dominant, and a so-called Mie scattering region in which little scattering occurs in the back is obtained.
 また、α≫1の場合、前方散乱が支配的であり、側方と後方には殆ど散乱しない、いわゆる幾何光学に基づく回折散乱の領域となる。つまり、粒径パラメータαは、粒子の粒径と粒子に入射する光の波長、即ち蛍光体層から発光する蛍光の波長によって決まってくる。例えば、600nmの蛍光を配光調整層によって前方、且つ側方に散乱させたい場合には、粒径パラメータα≒1となるように粒子の粒径を設定すればよい。 Further, in the case of α >> 1, forward scattering is dominant, and it becomes a diffraction scattering region based on so-called geometrical optics that hardly scatters to the side and back. That is, the particle size parameter α is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter α≈1.
(10)第十実施形態
  図12は、第十実施形態に係る発光デバイスを示す概略断面図である。図12において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス120は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、蛍光体層91~93の間に形成された、少なくとも前記蛍光体層91~93から出射される蛍光の発光方向を変える配光調整層31と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層31と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81と、前記配光調整層31と前記障壁51の間にそれぞれ形成された光吸収層121から概略構成されている。
(10) Tenth Embodiment FIG. 12 is a schematic sectional view showing a light emitting device according to the tenth embodiment. In FIG. 12, the same components as those of the light emitting device 30 shown in FIG.
The light emitting device 120 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed to face the excitation light source, and that emits fluorescence when excited by the excitation light, and a second phosphor layer 92. The substrate 13 on which the third phosphor layer 93 is formed, and the emission direction of the fluorescence emitted from at least the phosphor layers 91 to 93 formed between the substrate 13 and the phosphor layers 91 to 93. The light distribution adjusting layer 31 that changes the light intensity, the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the incident surfaces on which the excitation light is incident on the phosphor layers 91 to 93 A wavelength selective transmission / reflection layer 61 formed on the side, and between the phosphor layers 91 to 93 and the wavelength selection transmission / reflection layer 61, a low refractive index layer 71 having a smaller refractive index than the phosphor layers 91 to 93. The light distribution layer 31 and the firefly A low refractive index layer 81 having a refractive index smaller than that of the phosphor layers 91 to 93 and a light absorption layer 121 formed between the light distribution adjusting layer 31 and the barrier 51, respectively, between the body layers 91 to 93. It is roughly composed.
  光吸収層121は、光吸収性を有する材料から構成され、隣り合う画素間の領域に対応して形成されている。この光吸収層121により、表示のコントラストを向上させることができる。
  光吸収層121の膜厚は、通常100nm~100μm程度であるが、100nm~10μmが好ましい。また、蛍光体層13の側面への発光を効率よく外部に取り出すために、光吸収層121の膜厚は、蛍光体層91~93の膜厚より薄い方が好ましい。
The light absorption layer 121 is made of a light-absorbing material, and is formed corresponding to a region between adjacent pixels. The light absorption layer 121 can improve display contrast.
The film thickness of the light absorption layer 121 is usually about 100 nm to 100 μm, preferably 100 nm to 10 μm. Further, in order to efficiently extract light emitted from the side surface of the phosphor layer 13 to the outside, it is preferable that the thickness of the light absorption layer 121 is smaller than the thickness of the phosphor layers 91 to 93.
  図12を参照して、発光デバイス120における発光について説明する。
  発光デバイス120において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 12, the light emission in the light-emitting device 120 is demonstrated.
In the light emitting device 120, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、が配光調整層31に入射すると、入射した蛍光は配光調整層31内で、光散乱により光の進行方向が変わる。この時、配光調整層31の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層31中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層31内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層31を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. Fluorescent components emitted from the first fluorescent layer 91, fluorescent components emitted from the second fluorescent layer 92, and fluorescent components emitted from the third fluorescent layer 93, which have different emission profiles, enter the light distribution adjustment layer 31. Then, the incident fluorescence changes in the light distribution adjusting layer 31 due to light scattering. At this time, the optical path length in the light distribution adjustment layer 31 is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer 31 and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer 31. In other words, a light emission profile in which the luminance increases as the viewing angle increases has a light emission profile in which the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer 31. The fluorescent component is extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層91~93と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層91~93の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層91~93から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the low refractive index layer 71 is provided between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the side opposite to the light extraction side of the phosphor layers 91 to 93 ( Of the fluorescent components emitted on the back side), the fluorescent light incident on the interface is reflected at an angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, and is effectively extracted to the outside as light emission on the light extraction side. Can do. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out very efficiently to the outside. It becomes possible.
  また、本構造においては、配光調整層31と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layers 91 to 93, the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided. Among them, by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に、前記配光調整層31と前記障壁51の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~93から発光した蛍光が隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 In this configuration, since the light absorption layer 121 formed between the light distribution adjusting layer 31 and the barrier 51 is provided between the phosphor layers adjacent to each other, the phosphor layer 91 is provided. It is possible to prevent the fluorescence emitted from .about.93 from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
(11)第十一実施形態
  図13は、第十一実施形態に係る発光デバイスを示す概略断面図である。図11において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス130は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、第一の蛍光体層91の間に形成された、少なくとも前記蛍光体層91から出射される蛍光の発光方向を変える配光調整層111と、第二の蛍光体層92の間に形成された、少なくとも前記蛍光体層92から出射される蛍光の発光方向を変える配光調整層112と、第三の蛍光体層93の間に形成された、少なくとも前記蛍光体層93から出射される蛍光の発光方向を変える配光調整層113と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層111~113と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81と、互いに隣接した配光調整層111~113どうしの間に、前記基板13と前記障壁51の間にそれぞれ形成された光吸収層121から概略構成されている。
(11) Eleventh Embodiment FIG. 13 is a schematic sectional view showing a light emitting device according to the eleventh embodiment. In FIG. 11, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 130 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. The emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91 is defined. A light distribution adjustment layer 112 that is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor. Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other. Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and between the light distribution control layers 111 to 113 and the phosphor layers 91 to 93, a low refractive index having a refractive index lower than that of the phosphor layers 91 to 93. A light absorbing layer 121 is formed between the refractive index layer 81 and the light distribution adjusting layers 111 to 113 adjacent to each other and between the substrate 13 and the barrier 51, respectively.
  図13を参照して、発光デバイス130における発光について説明する。
  発光デバイス130において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 13, the light emission in the light-emitting device 130 is demonstrated.
In the light emitting device 130, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、がそれぞれ配光調整層111、配光調整層112、配光調整層113に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. The light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively. When the light enters the light distribution adjusting layer 112 and the light distribution adjusting layer 113, the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside. Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  また、本構造においては、配光調整層31と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層111~113と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layer 31 and the phosphor layers 91 to 93, the fluorescent component that emits light to the light extraction side of the phosphor layers 91 to 93 is provided. Among them, by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. can do. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layers 111 to 113 and the phosphor layers 91 to 93, the fluorescent components emitted from the phosphor layers 91 to 93 can be taken out without loss. It becomes possible.
  また、本構造においては、光取出し方向から見て、配光調整層は光吸収層によって仕切られているため、配光調整層を導波して隣接画素に光が侵入することを防止することもできる。また、本構成においては、互いに隣接した配光調整層どうしの間に、前記障壁51と前記基板13の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~93から発光した蛍光が隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 Further, in this structure, since the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also. In this configuration, since the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
 配光調整層の光散乱体材料を構成する粒子の粒径は、蛍光体層から発光した蛍光の波長に応じて最適化するのが好ましい。 It is preferable to optimize the particle size of the light scatterer material of the light distribution adjusting layer according to the wavelength of the fluorescence emitted from the phosphor layer.
 一般的に、粒子の散乱特性を決定する散乱強度パラメータは、粒子の屈折率と粒子の周囲を取り巻く環境の屈折率の差、粒径パラメータα(α=πD/λ[D:粒子の粒子直径、λ:光の波長])、および散乱角θ(粒子に入射した入射光と粒子に当たって散乱した散乱光の成す角)の関係で表わされる。この中で、散乱特性に大きく影響するのは粒径パラメータαである。α<1の場合、散乱強度分布は、前方散乱(θ=0°前後)と後方散乱(θ=180°前後)が支配的であり、側方(θ=90°前後)には殆ど散乱しない、いわゆるレイリー散乱の領域となる。 Generally, the scattering intensity parameter that determines the scattering characteristics of a particle is the difference between the refractive index of the particle and the refractive index of the environment surrounding the particle, the particle size parameter α (α = πD / λ [D: particle diameter of the particle). , Λ: wavelength of light]), and a scattering angle θ (an angle formed by incident light incident on the particle and scattered light scattered by the particle). Among these, the particle size parameter α greatly affects the scattering characteristics. When α <1, the scattering intensity distribution is dominated by forward scattering (around θ = 0 °) and backward scattering (around θ = 180 °), and hardly scatters to the side (around θ = 90 °). This is a so-called Rayleigh scattering region.
 また、α≒1の場合、前方散乱と側方散乱が支配的であり、後方には殆ど散乱しない、いわゆるミー散乱の領域となる。また、α>>1の場合、前方散乱が支配的であり、側方と後方には殆ど散乱しない、いわゆる幾何光学に基づく回折散乱の領域となる。つまり、粒径パラメータαは、粒子の粒径と粒子に入射する光の波長、即ち蛍光体層から発光する蛍光の波長によって決まってくる。例えば、600nmの蛍光を配光調整層によって前方、且つ側方に散乱させたい場合には、粒径パラメータα≒1となるように粒子の粒径を設定すればよい。 Further, in the case of α≈1, forward scattering and side scattering are dominant, and a so-called Mie scattering region in which little scattering occurs in the backward direction. Further, in the case of α >> 1, forward scattering is dominant, and this is a diffraction scattering region based on so-called geometrical optics that hardly scatters to the side and back. That is, the particle size parameter α is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter α≈1.
(12)第十ニ実施形態
  図14は、第十ニ実施形態に係る発光デバイスを示す概略断面図である。図14において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス140は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、第一の蛍光体層91の間に形成された、少なくとも前記蛍光体層91から出射される蛍光の発光方向を変える配光調整層111と、第二の蛍光体層92の間に形成された、少なくとも前記蛍光体層92から出射される蛍光の発光方向を変える配光調整層112と、第三の蛍光体層93の間に形成された、少なくとも前記蛍光体層93から出射される蛍光の発光方向を変える配光調整層113と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層111~113と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81と、互いに隣接した配光調整層111~113どうしの間に、前記基板13と前記障壁51の間にそれぞれ形成された光吸収層121と、前記障壁51の励起光入射面上に形成された第二の光吸収層141から概略構成されている。
(12) Tenth Embodiment FIG. 14 is a schematic cross-sectional view showing a light emitting device according to the tenth embodiment. In FIG. 14, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 140 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source and that is excited by the excitation light to emit fluorescence, and a second phosphor layer 92. The emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91 is defined. A light distribution adjustment layer 112 that is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor. Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other. Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and light distribution control layers 111 to 113 and phosphor layers 91 to 93 having a refractive index lower than that of phosphor layers 91 to 93. Between the refractive index layer 81 and the light distribution adjustment layers 111 to 113 adjacent to each other, a light absorption layer 121 formed between the substrate 13 and the barrier 51, and an excitation light incident surface of the barrier 51 The second light absorption layer 141 is formed roughly.
  図14を参照して、発光デバイス140における発光について説明する。
  発光デバイス140において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 14, the light emission in the light-emitting device 140 is demonstrated.
In the light emitting device 140, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、がそれぞれ配光調整層111、配光調整層112、配光調整層113に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. The light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively. When the light enters the light distribution adjusting layer 112 and the light distribution adjusting layer 113, the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  また、本構造においては、配光調整層111~113と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layers 111 to 113 and the phosphor layers 91 to 93, light is emitted to the light extraction side of the phosphor layers 91 to 93. Among the fluorescent components, the fluorescent component emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  また、本構造においては、光取出し方向から見て、配光調整層は光吸収層によって仕切られているため、配光調整層を導波して隣接画素に光が侵入することを防止することもできる。また、本構成においては、互いに隣接した配光調整層どうしの間に、前記障壁51と前記基板13の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~93から発光した蛍光が隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 Further, in this structure, since the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also. In this configuration, since the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  また、本構成においては、前記障壁51の励起光入射面上に形成された第二の光吸収層141が設けられているため、励起光が蛍光体層に入射せず障壁51の底面に当たって反射され、隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストの低下を防ぐことができる。 Further, in this configuration, since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered.
 配光調整層の光散乱体材料を構成する粒子の粒径は、蛍光体層から発光した蛍光の波長に応じて最適化するのが好ましい。 It is preferable to optimize the particle size of the light scatterer material of the light distribution adjusting layer according to the wavelength of the fluorescence emitted from the phosphor layer.
  一般的に、粒子の散乱特性を決定する散乱強度パラメータは、粒子の屈折率と粒子の周囲を取り巻く環境の屈折率の差、粒径パラメータα(α=πD/λ[D:粒子の粒子直径、λ:光の波長])、および散乱角θ(粒子に入射した入射光と粒子に当たって散乱した散乱光の成す角)の関係で表わされる。この中で、散乱特性に大きく影響するのは粒径パラメータαである。α<1の場合、散乱強度分布は、前方散乱(θ=0°前後)と後方散乱(θ=180°前後)が支配的であり、側方(θ=90°前後)には殆ど散乱しない、いわゆるレイリー散乱の領域となる。また、α≒1の場合、前方散乱と側方散乱が支配的であり、後方には殆ど散乱しない、いわゆるミー散乱の領域となる。また、α≫1の場合、前方散乱が支配的であり、側方と後方には殆ど散乱しない、いわゆる幾何光学に基づく回折散乱の領域となる。つまり、粒径パラメータαは、粒子の粒径と粒子に入射する光の波長、即ち蛍光体層から発光する蛍光の波長によって決まってくる。例えば、600nmの蛍光を配光調整層によって前方、且つ側方に散乱させたい場合には、粒径パラメータα≒1となるように粒子の粒径を設定すればよい。 Generally, the scattering intensity parameter that determines the scattering characteristics of a particle is the difference between the refractive index of the particle and the refractive index of the environment surrounding the particle, the particle size parameter α (α = πD / λ [D: particle diameter of the particle). , Λ: wavelength of light]), and a scattering angle θ (an angle formed by incident light incident on the particle and scattered light scattered by the particle). Among these, the particle size parameter α greatly affects the scattering characteristics. When α <1, the scattering intensity distribution is dominated by forward scattering (around θ = 0 °) and backward scattering (around θ = 180 °), and hardly scatters to the side (around θ = 90 °). This is a so-called Rayleigh scattering region. Further, in the case of α≈1, forward scattering and side scattering are dominant, and a so-called Mie scattering region in which little scattering occurs in the back is obtained. Further, in the case of α >> 1, forward scattering is dominant, and it becomes a region of diffraction scattering based on so-called geometrical optics that hardly scatters to the side and back. That is, the particle size parameter α is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter α≈1.
(13)第十三実施形態
  図15は、第十三実施形態に係る発光デバイスを示す概略断面図である。図15において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス150は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13と、第一の蛍光体層91の間に形成された、少なくとも前記蛍光体層91から出射される蛍光の発光方向を変える配光調整層111と、第二の蛍光体層92の間に形成された、少なくとも前記蛍光体層92から出射される蛍光の発光方向を変える配光調整層112と、第三の蛍光体層93の間に形成された、少なくとも前記蛍光体層93から出射される蛍光の発光方向を変える配光調整層113と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層111~113と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81と、互いに隣接した配光調整層111~113どうしの間に、前記基板13と前記障壁51の間にそれぞれ形成された光吸収層121と、前記障壁51の励起光入射面上に形成された第二の光吸収層141と、前記基板13と、第一の配光調性層111の間に形成された第一のカラーフィルター151と、第二の配光調整層112の間に形成された第二のカラーフィルター152と、第三の配光調整層113の間に形成された第三のカラーフィルター153から概略構成されている。
(13) Thirteenth Embodiment FIG. 15 is a schematic sectional view showing a light emitting device according to the thirteenth embodiment. In FIG. 15, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 150 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed opposite to the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. The emission direction of the fluorescence emitted from at least the phosphor layer 91 formed between the substrate 13 on which the third phosphor layer 93 is formed, the substrate 13 and the first phosphor layer 91 is defined. A light distribution adjustment layer 112 that is formed between the light distribution adjustment layer 111 to be changed and the second phosphor layer 92 and changes the emission direction of at least the fluorescence emitted from the phosphor layer 92, and a third phosphor. Formed on the substrate 13 between at least the light distribution adjusting layer 113 that changes the emission direction of the fluorescence emitted from the phosphor layer 93 and between the phosphor layers adjacent to each other. Light-reflective barrier 51 and fluorescence In the layers 91 to 93, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, and between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the phosphor layer 91 Low refractive index layer 71 having a refractive index smaller than that of 93, and light distribution control layers 111 to 113 and phosphor layers 91 to 93 having a refractive index lower than that of phosphor layers 91 to 93. Between the refractive index layer 81 and the light distribution adjustment layers 111 to 113 adjacent to each other, a light absorption layer 121 formed between the substrate 13 and the barrier 51, and an excitation light incident surface of the barrier 51 Of the second light absorption layer 141 formed on the substrate, the substrate 13, the first color filter 151 formed between the first light distribution control layer 111, and the second light distribution adjustment layer 112. A second color filter 152 formed therebetween; It is schematically composed of a third color filter 153 formed between the third light distribution control layer 113.
  カラーフィルターとしては、従来のカラーフィルターを用いることができる。カラーフィルターを設けることによって、蛍光体層から発光した蛍光の色純度を高めることができ、色再現範囲を拡大することができる。また、各蛍光体層に設けたカラーフィルターが、外光中に含まれる励起光成分を吸収するため、外光による蛍光体層の発光を低減または防止することが可能となり、コントラストの低下を低減または防止することができる。 A conventional color filter can be used as the color filter. By providing the color filter, the color purity of the fluorescence emitted from the phosphor layer can be increased, and the color reproduction range can be expanded. In addition, the color filter provided in each phosphor layer absorbs the excitation light component contained in the external light, so it is possible to reduce or prevent the phosphor layer from emitting light due to the external light, reducing the decrease in contrast Or it can be prevented.
  図15を参照して、発光デバイス150における発光について説明する。
  発光デバイス150において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 15, the light emission in the light-emitting device 150 is demonstrated.
In the light emitting device 150, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、がそれぞれ配光調整層111、配光調整層112、配光調整層113に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. The light emission profiles are different from each other, the fluorescent component emitted from the first fluorescent layer 91, the fluorescent component emitted from the second fluorescent layer 92, and the fluorescent component emitted from the third fluorescent layer 93, respectively. When the light enters the light distribution adjusting layer 112 and the light distribution adjusting layer 113, the incident fluorescence changes in the light traveling direction in the light distribution adjusting layer due to light scattering. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  また、本構造においては、配光調整層111~113と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、配光調調整層31と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 81 is provided between the light distribution adjusting layers 111 to 113 and the phosphor layers 91 to 93, light is emitted to the light extraction side of the phosphor layers 91 to 93. Among the fluorescent components, the fluorescent component emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the light distribution adjustment layer 31 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. Become.
  また、本構造においては、光取出し方向から見て、配光調整層は光吸収層によって仕切られているため、配光調整層を導波して隣接画素に光が侵入することを防止することもできる。また、本構成においては、互いに隣接した配光調整層どうしの間に、前記障壁51と前記基板13の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~93から発光した蛍光が隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 Further, in this structure, since the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also. In this configuration, since the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  また、本構成においては、前記障壁51の励起光入射面上に形成された第二の光吸収層141が設けられているため、励起光が蛍光体層に入射せず障壁51の底面に当たって反射され、隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストの低下を防ぐことができる。また、本構成においては前記基板13と、第一の配光調性層111の間に形成された第一のカラーフィルター151と、第二の配光調整層112の間に形成された第二のカラーフィルター152と、第三の配光調整層113の間に形成された第三のカラーフィルター153が設けられているため、各蛍光体層から発光した蛍光の色純度を高めることができ、色再現範囲を拡大することができる。 Further, in this configuration, since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered. Further, in the present configuration, the second color formed between the substrate 13, the first color filter 151 formed between the first light distribution control layer 111 and the second light distribution adjustment layer 112. Since the third color filter 153 formed between the color filter 152 and the third light distribution adjustment layer 113 is provided, the color purity of the fluorescence emitted from each phosphor layer can be increased. The color reproduction range can be expanded.
  また、各蛍光体層上に形成されたカラーフィルターが、外光中に含まれる励起光成分を吸収するため、外光による蛍光体層の発光を低減または防止することが可能となり、コントラストの低下を低減または防止することができる。さらに、蛍光体層に吸収されず、透過しようとする励起光が外部に漏れ出すのを防止できるため、蛍光体層からの発光と励起光による混色によって色純度が低下するのを防止することができる。 In addition, since the color filter formed on each phosphor layer absorbs the excitation light component contained in the external light, it is possible to reduce or prevent light emission of the phosphor layer due to the external light, resulting in a decrease in contrast. Can be reduced or prevented. Furthermore, since it is possible to prevent the excitation light that is not absorbed by the phosphor layer from leaking to the outside, it is possible to prevent the color purity from being deteriorated due to color mixture by light emission from the phosphor layer and the excitation light. it can.
 配光調整層の光散乱体材料を構成する粒子の粒径は、蛍光体層から発光した蛍光の波長に応じて最適化するのが好ましい。 It is preferable to optimize the particle size of the light scatterer material of the light distribution adjusting layer according to the wavelength of the fluorescence emitted from the phosphor layer.
  一般的に、粒子の散乱特性を決定する散乱強度パラメータは、粒子の屈折率と粒子の周囲を取り巻く環境の屈折率の差、粒径パラメータα(α=πD/λ[D:粒子の粒子直径、λ:光の波長])、および散乱角θ(粒子に入射した入射光と粒子に当たって散乱した散乱光の成す角)の関係で表わされる。この中で、散乱特性に大きく影響するのは粒径パラメータαである。α<1の場合、散乱強度分布は、前方散乱(θ=0°前後)と後方散乱(θ=180°前後)が支配的であり、側方(θ=90°前後)には殆ど散乱しない、いわゆるレイリー散乱の領域となる。 Generally, the scattering intensity parameter that determines the scattering characteristics of a particle is the difference between the refractive index of the particle and the refractive index of the environment surrounding the particle, the particle size parameter α (α = πD / λ [D: particle diameter of the particle). , Λ: wavelength of light]), and a scattering angle θ (an angle formed by incident light incident on the particle and scattered light scattered by the particle). Among these, the particle size parameter α greatly affects the scattering characteristics. When α <1, the scattering intensity distribution is dominated by forward scattering (around θ = 0 °) and backward scattering (around θ = 180 °), and hardly scatters to the side (around θ = 90 °). This is a so-called Rayleigh scattering region.
  また、α≒1の場合、前方散乱と側方散乱が支配的であり、後方には殆ど散乱しない、いわゆるミー散乱の領域となる。また、α≫1の場合、前方散乱が支配的であり、側方と後方には殆ど散乱しない、いわゆる幾何光学に基づく回折散乱の領域となる。つまり、粒径パラメータαは、粒子の粒径と粒子に入射する光の波長、即ち蛍光体層から発光する蛍光の波長によって決まってくる。例えば、600nmの蛍光を配光調整層によって前方、且つ側方に散乱させたい場合には、粒径パラメータα≒1となるように粒子の粒径を設定すればよい。 In the case of α≈1, forward scattering and side scattering are dominant, and so-called Mie scattering region is formed in which little scattering is performed backward. Further, in the case of α >> 1, forward scattering is dominant, and it becomes a region of diffraction scattering based on so-called geometrical optics that hardly scatters to the side and back. That is, the particle size parameter α is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter α≈1.
(14)第十四実施形態
  図16は、第十四実施形態に係る発光デバイスを示す概略断面図である。図16において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス160は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、少なくとも前記光源から出射される光の発光方向を変える配光調整層161が形成された基板13と、前記基板13と、第一の蛍光体層91の間に形成された、少なくとも前記蛍光体層91から出射される蛍光の発光方向を変える配光調整層111と、第二の蛍光体層92の間に形成された、少なくとも前記蛍光体層92から出射される蛍光の発光方向を変える配光調整層112と、互いに隣接した蛍光体層91~92どうし、或いは配光調性層161との間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~92および配光調整層161における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~92および配光調整層161と前記波長選択透過反射層61の間に、前記蛍光体層91~92よりも屈折率の小さい低屈折率層71と、前記配光調性層111~112と前記蛍光体層91~92の間、および前記配光調整層161とカラーフィルター153の間に、前記蛍光体層91~92よりも屈折率の小さい低屈折率層81と、互いに隣接した配光調整層111~112、161どうしの間に、前記基板13と前記障壁51の間にそれぞれ形成された光吸収層121と、前記障壁51の励起光入射面上に形成された第二の光吸収層141と、前記基板13と、第一の配光調性層111の間に形成された第一のカラーフィルター151と、第二の配光調整層112の間に形成された第二のカラーフィルター152と、第三の配光調整層161の間に形成された第三のカラーフィルター153から概略構成されている。
(14) Fourteenth Embodiment FIG. 16 is a schematic cross-sectional view showing a light emitting device according to a fourteenth embodiment. In FIG. 16, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 160 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. , At least the phosphor formed between the substrate 13 on which the light distribution adjusting layer 161 for changing the light emission direction of the light emitted from the light source is formed, and the substrate 13 and the first phosphor layer 91. A light distribution adjusting layer 111 that changes the emission direction of the fluorescence emitted from the layer 91 and a distribution that changes the emission direction of the fluorescence emitted from at least the phosphor layer 92 formed between the second phosphor layer 92. A light-reflective barrier 51 formed on the substrate 13 between the light adjustment layer 112 and the phosphor layers 91 to 92 adjacent to each other or the light distribution control layer 161, and the phosphor layers 91 to 92, respectively. And light distribution adjustment layer 1 1, the wavelength selective transmission / reflection layer 61 formed on the incident surface side on which excitation light is incident, the phosphor layers 91 to 92, the light distribution adjustment layer 161, and the wavelength selective transmission / reflection layer 61, A low refractive index layer 71 having a lower refractive index than the body layers 91 to 92, between the light distribution control layers 111 to 112 and the phosphor layers 91 to 92, and between the light distribution adjustment layer 161 and the color filter 153. Between the low refractive index layer 81 having a smaller refractive index than the phosphor layers 91 to 92 and the light distribution adjusting layers 111 to 112 and 161 adjacent to each other, between the substrate 13 and the barrier 51. Formed between the light absorption layer 121 formed respectively, the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51, the substrate 13, and the first light distribution adjusting layer 111. First color filter 15 And a second color filter 152 formed between the second light distribution adjustment layers 112 and a third color filter 153 formed between the third light distribution adjustment layers 161. .
  図16を参照して、発光デバイス160における発光について説明する。
  発光デバイス160において、励起光源11から第一の蛍光体層91、第二の蛍光体層92にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 16, the light emission in the light-emitting device 160 is demonstrated.
In the light emitting device 160, when excitation light is incident on the first phosphor layer 91 and the second phosphor layer 92 from the excitation light source 11, they are isotropic from each phosphor layer, that is, with equal energy in any direction. The light is emitted. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、がそれぞれ配光調整層111、配光調整層112に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. When the fluorescent component emitted from the first fluorescent layer 91 and the fluorescent component emitted from the second fluorescent layer 92 having different emission profiles are incident on the light distribution adjustment layer 111 and the light distribution adjustment layer 112, respectively, the incident fluorescence In the light distribution adjusting layer, the traveling direction of light changes due to light scattering. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91 and light emission 95 from the second phosphor layer 92. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~92および配光調整層161と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 92 and the light distribution adjusting layer 161 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be very efficiently externally provided. It can be taken out.
  また、本構造においては、基板13と蛍光体層91~92および配光調性層161の間に、低屈折率層81が設けられているため、蛍光体層91~92の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、基板13と蛍光体層91~92の間に設けることによって、蛍光体層91~92から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 Further, in this structure, since the low refractive index layer 81 is provided between the substrate 13 and the phosphor layers 91 to 92 and the light distribution control layer 161, the light extraction side of the phosphor layers 91 to 92 is provided. Of the fluorescent component that emits light, the fluorescent component that is emitted at a shallow angle from the phosphor layer is incident on the substrate by reflecting the fluorescence incident on the interface at a critical angle greater than the critical angle of the interface between the phosphor layer and the low refractive index layer. Can be suppressed. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the substrate 13 and the phosphor layers 91 to 92, the fluorescent component emitted from the phosphor layers 91 to 92 can be extracted outside without loss.
  また、本構造においては、光取出し方向から見て、配光調整層は光吸収層によって仕切られているため、配光調整層を導波して隣接画素に光が侵入することを防止することもできる。また、本構成においては、互いに隣接した配光調整層どうしの間に、前記障壁51と前記基板13の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~92から発光した蛍光、或いは配光調整層161から出射した光が隣接した蛍光体層91~92、或るいは配光調整層161に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 Further, in this structure, since the light distribution adjustment layer is partitioned by the light absorption layer as viewed from the light extraction direction, the light distribution adjustment layer is guided to prevent light from entering the adjacent pixels. You can also. In this configuration, since the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 92 are provided. It is possible to prevent the fluorescence emitted from the light or the light emitted from the light distribution adjustment layer 161 from entering the adjacent phosphor layers 91 to 92 or the light distribution adjustment layer 161 by light absorption. Can be improved.
  また、本構成においては、前記障壁51の励起光入射面上に形成された第二の光吸収層141が設けられているため、励起光が蛍光体層91~92、或るいは配光調整層161に入射せず障壁51の底面に当たって反射され、隣接した蛍光体層91~92、或るいは配光調整層161に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストの低下を防ぐことができる。また、本構成においては前記基板13と、第一の配光調性層111の間に形成された第一のカラーフィルター151と、第二の配光調整層112の間に形成された第二のカラーフィルター152と、第三の配光調整層161の間に形成された第三のカラーフィルター153が設けられているため、各蛍光体層から発光した蛍光の色純度を高めることができ、色再現範囲を拡大することができる。 Further, in this configuration, since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light is the phosphor layers 91 to 92 or the light distribution adjustment. It is possible to prevent the light from entering the adjacent phosphor layers 91 to 92 or the light distribution adjusting layer 161 by light absorption without being incident on the layer 161 and being reflected by the bottom surface of the barrier 51, thereby reducing the display contrast. Can be prevented. Further, in the present configuration, the second color formed between the substrate 13, the first color filter 151 formed between the first light distribution control layer 111 and the second light distribution adjustment layer 112. Since the third color filter 153 formed between the color filter 152 and the third light distribution adjustment layer 161 is provided, the color purity of the fluorescence emitted from each phosphor layer can be increased. The color reproduction range can be expanded.
  また、各蛍光体層上に形成されたカラーフィルターが、外光中に含まれる励起光成分を吸収するため、外光による蛍光体層の発光を低減または防止することが可能となり、コントラストの低下を低減または防止することができる。さらに、蛍光体層に吸収されず、透過しようとする励起光が外部に漏れ出すのを防止できるため、蛍光体層からの発光と励起光による混色によって色純度が低下するのを防止することができる。 In addition, since the color filter formed on each phosphor layer absorbs the excitation light component contained in the external light, it is possible to reduce or prevent light emission of the phosphor layer due to the external light, resulting in a decrease in contrast. Can be reduced or prevented. Furthermore, since it is possible to prevent the excitation light that is not absorbed by the phosphor layer from leaking to the outside, it is possible to prevent the color purity from being deteriorated due to color mixture by light emission from the phosphor layer and the excitation light. it can.
  また、本構成においては、前項の第十三実施形態における第三の蛍光体層93と第三の配光調整層113の部分が、配光調整層161のみで構成されているため、簡便なプロセスで発光デバイスを形成することができる。また、該当画素では、他の画素の蛍光体層91~92の膜厚分、配光調整層の膜厚を厚膜化することができるため、配光プロファイルを調整し易くなる。 Further, in this configuration, the third phosphor layer 93 and the third light distribution adjustment layer 113 in the thirteenth embodiment of the previous section are configured by only the light distribution adjustment layer 161, so that it is simple. A light emitting device can be formed by the process. Further, in the corresponding pixel, the thickness of the light distribution adjusting layer can be increased by the thickness of the phosphor layers 91 to 92 of other pixels, so that the light distribution profile can be easily adjusted.
 配光調整層の光散乱体材料を構成する粒子の粒径は、蛍光体層から発光した蛍光の波長に応じて最適化するのが好ましい。 It is preferable to optimize the particle size of the light scatterer material of the light distribution adjusting layer according to the wavelength of the fluorescence emitted from the phosphor layer.
  一般的に、粒子の散乱特性を決定する散乱強度パラメータは、粒子の屈折率と粒子の周囲を取り巻く環境の屈折率の差、粒径パラメータα(α=πD/λ[D:粒子の粒子直径、λ:光の波長])、および散乱角θ(粒子に入射した入射光と粒子に当たって散乱した散乱光の成す角)の関係で表わされる。この中で、散乱特性に大きく影響するのは粒径パラメータαである。α<1の場合、散乱強度分布は、前方散乱(θ=0°前後)と後方散乱(θ=180°前後)が支配的であり、側方(θ=90°前後)には殆ど散乱しない、いわゆるレイリー散乱の領域となる。また、α≒1の場合、前方散乱と側方散乱が支配的であり、後方には殆ど散乱しない、いわゆるミー散乱の領域となる。また、α≫1の場合、前方散乱が支配的であり、側方と後方には殆ど散乱しない、いわゆる幾何光学に基づく回折散乱の領域となる。つまり、粒径パラメータαは、粒子の粒径と粒子に入射する光の波長、即ち蛍光体層から発光する蛍光の波長によって決まってくる。例えば、600nmの蛍光を配光調整層によって前方、且つ側方に散乱させたい場合には、粒径パラメータα≒1となるように粒子の粒径を設定すればよい。 Generally, the scattering intensity parameter that determines the scattering characteristics of a particle is the difference between the refractive index of the particle and the refractive index of the environment surrounding the particle, the particle size parameter α (α = πD / λ [D: particle diameter of the particle). , Λ: wavelength of light]), and a scattering angle θ (an angle formed by incident light incident on the particle and scattered light scattered by the particle). Among these, the particle size parameter α greatly affects the scattering characteristics. When α <1, the scattering intensity distribution is dominated by forward scattering (around θ = 0 °) and backward scattering (around θ = 180 °), and hardly scatters to the side (around θ = 90 °). This is a so-called Rayleigh scattering region. Further, in the case of α≈1, forward scattering and side scattering are dominant, and a so-called Mie scattering region in which little scattering occurs in the back is obtained. Further, in the case of α >> 1, forward scattering is dominant, and it becomes a region of diffraction scattering based on so-called geometrical optics that hardly scatters to the side and back. That is, the particle size parameter α is determined by the particle size of the particle and the wavelength of light incident on the particle, that is, the wavelength of fluorescence emitted from the phosphor layer. For example, when it is desired to scatter 600 nm fluorescence forward and laterally by the light distribution adjusting layer, the particle size of the particles may be set so that the particle size parameter α≈1.
(15)第十五実施形態
  図17は、第十五実施形態に係る発光デバイスを示す概略断面図である。図17において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス170は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13上に広がるように形成された、少なくとも前記蛍光体層91~93から出射される蛍光の発光方向を変える配光調整層171と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層111~113と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81と、互いに隣接した蛍光体層91~93どうしの間に、前記基板13と前記障壁51の間にそれぞれ形成された光吸収層121と、前記障壁51の励起光入射面上に形成された第二の光吸収層141から概略構成されている。
(15) Fifteenth Embodiment FIG. 17 is a schematic sectional view showing a light emitting device according to the fifteenth embodiment. In FIG. 17, the same components as those of the light emitting device 30 shown in FIG.
The light-emitting device 170 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is disposed opposite to the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. A substrate 13 on which a third phosphor layer 93 is formed, and a light distribution adjusting layer that is formed so as to spread on the substrate 13 and changes the emission direction of at least the fluorescence emitted from the phosphor layers 91 to 93 171 and the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the wavelengths formed on the incident surface side of the phosphor layers 91 to 93 on which the excitation light is incident. Between the selective transmission / reflection layer 61, the phosphor layers 91 to 93, and the wavelength selective transmission / reflection layer 61, the low refractive index layer 71 having a refractive index smaller than that of the phosphor layers 91 to 93, and the light distribution control. Layers 111 to 113 and the firefly Between the phosphor layers 91 to 93, the low refractive index layer 81 having a smaller refractive index than the phosphor layers 91 to 93, and the phosphor layers 91 to 93 adjacent to each other, the substrate 13 and the barrier 51. And a second light absorption layer 141 formed on the excitation light incident surface of the barrier 51.
  図17を参照して、発光デバイス170における発光について説明する。
  発光デバイス170において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。
With reference to FIG. 17, light emission in the light emitting device 170 will be described.
In the light emitting device 170, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. For example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles.
  つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、が基板13を介して、配光調整層171に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 That is, the light distribution profile of the fluorescence extracted outside is different for each phosphor layer. A fluorescent component emitted from the first fluorescent layer 91, a fluorescent component emitted from the second fluorescent layer 92, and a fluorescent component emitted from the third fluorescent layer 93, each having a different emission profile, are arranged via the substrate 13. When the light enters the light adjustment layer 171, the incident fluorescence changes in the light distribution adjustment layer due to light scattering in the light distribution adjustment layer. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  また、本構造においては、基板13と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、基板13と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。また、本構造においては、光取出し方向から見て、蛍光体層は光吸収層によって仕切られているため、蛍光体層を導波して隣接画素に光が侵入することを防止することもできる。 In this structure, since the low refractive index layer 81 is provided between the substrate 13 and the phosphor layers 91 to 93, among the fluorescent components that emit light on the light extraction side of the phosphor layers 91 to 93, By reflecting the fluorescence incident on the interface at a critical angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. it can. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the substrate 13 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss. In addition, in this structure, since the phosphor layer is partitioned by the light absorption layer when viewed from the light extraction direction, light can be prevented from entering the adjacent pixels by being guided through the phosphor layer. .
  また、本構成においては、互いに隣接した配光調整層どうしの間に、前記障壁51と前記基板13の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~93から発光した蛍光が隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 In this configuration, since the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  また、本構成においては、前記障壁51の励起光入射面上に形成された第二の光吸収層141が設けられているため、励起光が蛍光体層に入射せず障壁51の底面に当たって反射され、隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストの低下を防ぐことができる。また、本構成においては、配光調整層171を出た光は、他の層を介することなく、そのまま外部に取り出されるため、配光調整層171の調整のみで発光プロファイルの最適化を図ることができる。 Further, in this configuration, since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered. Further, in this configuration, since the light emitted from the light distribution adjustment layer 171 is extracted as it is without passing through other layers, the light emission profile is optimized only by adjusting the light distribution adjustment layer 171. Can do.
(16)第十六実施形態
  図18は、第十六実施形態に係る発光デバイスを示す概略断面図である。図18において、図3に示した発光デバイス30と同一の構成要素には同一符号を付して、その説明を省略する。
  発光デバイス180は、励起光を発する励起光源11と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する第一の蛍光体層91と、第二の蛍光体層92と、第三の蛍光体層93が形成された基板13と、前記基板13上に広がるように形成された、少なくとも前記蛍光体層91~93から出射される蛍光の発光方向を変える配光調整層171と、互いに隣接した蛍光体層どうしの間の基板13上にそれぞれ形成された光反射性の障壁51と、蛍光体層91~93における、励起光を入射させる入射面側に形成された波長選択透過反射層61と、前記蛍光体層91~93と前記波長選択透過反射層61の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層71と、前記配光調性層111~113と前記蛍光体層91~93の間に、前記蛍光体層91~93よりも屈折率の小さい低屈折率層81と、互いに隣接した蛍光体層91~93どうしの間に、前記基板13と前記障壁51の間にそれぞれ形成された光吸収層121と、前記障壁51の励起光入射面上に形成された第二の光吸収層141と、前記配光調整層171上に広がるように形成された外光反射防止層181から概略構成されている。から概略構成されている。
(16) Sixteenth Embodiment FIG. 18 is a schematic sectional view showing a light emitting device according to the sixteenth embodiment. In FIG. 18, the same components as those of the light emitting device 30 shown in FIG.
The light emitting device 180 includes an excitation light source 11 that emits excitation light, a first phosphor layer 91 that is arranged to face the excitation light source, emits fluorescence when excited by the excitation light, and a second phosphor layer 92. A substrate 13 on which a third phosphor layer 93 is formed, and a light distribution adjusting layer that is formed so as to spread on the substrate 13 and changes the emission direction of at least the fluorescence emitted from the phosphor layers 91 to 93 171 and the light-reflective barrier 51 formed on the substrate 13 between the phosphor layers adjacent to each other, and the wavelengths formed on the incident surface side of the phosphor layers 91 to 93 on which the excitation light is incident. Between the selective transmission / reflection layer 61, the phosphor layers 91 to 93, and the wavelength selective transmission / reflection layer 61, the low refractive index layer 71 having a refractive index smaller than that of the phosphor layers 91 to 93, and the light distribution control. Layers 111 to 113 and the firefly Between the phosphor layers 91 to 93, the low refractive index layer 81 having a smaller refractive index than the phosphor layers 91 to 93, and the phosphor layers 91 to 93 adjacent to each other, the substrate 13 and the barrier 51. A light absorption layer 121 formed between each of the light absorption layers, a second light absorption layer 141 formed on the excitation light incident surface of the barrier 51, and an outer layer formed so as to spread on the light distribution adjustment layer 171. The light reflection preventing layer 181 is generally configured. It is roughly composed.
 外光反射防止層181としては、前記配光調整層171上に設けられたもので、例えば、前記配光調整層171と外部との間にて屈折率勾配を有したものである。この屈折率勾配としては、前記配光調整層171の屈折率をn1、外部の屈折率をn2とした場合、前記配光調性層171側から外部に向けて、前記配光調整層171の光取出し面と直交する厚さ方向に、n1からn2までの範囲内で緩やかに変化する勾配を有しているのが好ましい。具体的には、段階的にあるいは連続的に変化する勾配を有しているのが好ましい。 The external light antireflection layer 181 is provided on the light distribution adjustment layer 171 and has, for example, a refractive index gradient between the light distribution adjustment layer 171 and the outside. As the refractive index gradient, when the refractive index of the light distribution adjusting layer 171 is n1 and the external refractive index is n2, the light distribution adjusting layer 171 has a refractive index gradient from the light distribution adjusting layer 171 side toward the outside. It is preferable to have a gradient that gradually changes in the range from n1 to n2 in the thickness direction perpendicular to the light extraction surface. Specifically, it is preferable to have a gradient that changes stepwise or continuously.
 このような構成によって、外光反射防止層181は、外光が配光調整層に当たって反射する外光反射成分を最小限に抑えることができる。 With such a configuration, the external light antireflection layer 181 can minimize the external light reflection component that is reflected when the external light hits the light distribution adjustment layer.
 このような外光反射防止層181としては、例えば、(a1)屈折率の異なる複数の層(材料)を段階的に積層し、あるいは連続的に積層することにより、形成することができる。また、(a2)厚み方向に微小傾斜を有する1つ以上の微小構造体を形成し、該構造体の占める比率を厚み方向に連続的に変化させることにより、屈折率勾配を有する外光反射防止層151を形成することができる。 Such an external light antireflection layer 181 can be formed, for example, by (a1) laminating a plurality of layers (materials) having different refractive indexes stepwise or continuously. In addition, (a2) one or more microstructures having a minute inclination in the thickness direction are formed, and the proportion of the structure is continuously changed in the thickness direction, thereby preventing external light reflection having a refractive index gradient. Layer 151 can be formed.
 前記(a1)に関しては、例えばTiO層とSiO層とを積層した構造が挙げられる。また、MgO層とSiO層、ZrO層とSiO層、PMMA層とシリコンオイル層、等の組み合わせによる積層構造も挙げられる。ただし、本実施形態はこれらの材料の組み合わせに限定されるものではない。 With regard to (a1), for example, a structure in which a TiO 2 layer and a SiO 2 layer are laminated can be mentioned. In addition, a stacked structure including a combination of an MgO layer and an SiO 2 layer, a ZrO 2 layer and an SiO 2 layer, a PMMA layer and a silicon oil layer, and the like can also be given. However, this embodiment is not limited to the combination of these materials.
 前記(a2)に関しては、前記微小構造体の形成材料として、例えばポリエチレン、ポリプロピレン、ポリカーボネード、エポキシ等の透明樹脂や、SiO、Si等の透明無機物が挙げられる。さらに、これらの材料に屈折率の高い化合物、例えばTiO、CuO、Fe等のような金属酸化物を添加するのが好ましい。ただし、本実施形態はこれらの材料に限定されるものではない。 Regarding the (a2), examples of the material for forming the microstructure include transparent resins such as polyethylene, polypropylene, polycarbonate, and epoxy, and transparent inorganic materials such as SiO 2 and Si 3 N 4 . Furthermore, it is preferable to add a compound having a high refractive index to these materials, for example, a metal oxide such as TiO 2 , Cu 2 O, Fe 2 O 3 or the like. However, this embodiment is not limited to these materials.
  図18を参照して、発光デバイス180における発光について説明する。
  発光デバイス180において、励起光源11から第一の蛍光体層91、第二の蛍光体層92、第三の蛍光体層93にそれぞれ励起光を入射すると、各蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。しかしながら、蛍光体層から外部に取出される蛍光の配光プロファイルは、蛍光体の種類によって異なることが多い。例えば、蛍光体層を構成する蛍光体材料や樹脂材料の屈折率が蛍光体層ごとに異なる場合、外部に取出される蛍光が蛍光体層と外部との界面で屈折する屈折角は蛍光体層によって異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。
With reference to FIG. 18, the light emission in the light-emitting device 180 is demonstrated.
In the light emitting device 180, when excitation light is incident on the first phosphor layer 91, the second phosphor layer 92, and the third phosphor layer 93 from the excitation light source 11, isotropic from each phosphor layer, that is, Light is emitted with equal energy in any direction. However, the light distribution profile of fluorescence extracted from the phosphor layer to the outside often differs depending on the type of phosphor. For example, when the refractive index of the phosphor material or resin material constituting the phosphor layer is different for each phosphor layer, the refraction angle at which the fluorescence extracted outside is refracted at the interface between the phosphor layer and the outside is the phosphor layer It depends on. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer.
  また、例えば、蛍光体層が無機蛍光体材料で構成されている場合には、蛍光体粒子の粒径や形状によってその発光特性は異なる。つまり、外部に取出される蛍光の配光プロファイルがそれぞれの蛍光体層で異なることになる。発光プロファイルがそれぞれ異なる、第一の蛍光層91から発光する蛍光成分、第二の蛍光層92から発光する蛍光成分、第三の蛍光層93から発光する蛍光成分、が基板13を介して、配光調整層171に入射すると、入射した蛍光は配光調整層内で、光散乱により光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルを有する蛍光成分が、第一の蛍光体層91からの発光94として、第二の蛍光体層92からの発光95として、第三の蛍光体層93からの発光96として、外部に取出される。その結果、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない発光デバイスを得ることができる。 Also, for example, when the phosphor layer is made of an inorganic phosphor material, the light emission characteristics vary depending on the particle size and shape of the phosphor particles. That is, the light distribution profile of the fluorescence extracted to the outside is different for each phosphor layer. A fluorescent component emitted from the first fluorescent layer 91, a fluorescent component emitted from the second fluorescent layer 92, and a fluorescent component emitted from the third fluorescent layer 93, each having a different emission profile, are arranged via the substrate 13. When the light enters the light adjustment layer 171, the incident fluorescence changes in the light distribution adjustment layer due to light scattering in the light distribution adjustment layer. At this time, the light path length in the light distribution adjustment layer is longer in the latter case between light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer. In other words, the fluorescence having a light emission profile in which the luminance is higher as the viewing angle is larger, and the luminance in at least 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. The components are extracted to the outside as light emission 94 from the first phosphor layer 91, light emission 95 from the second phosphor layer 92, and light emission 96 from the third phosphor layer 93. As a result, it is possible to obtain a light emitting device that does not change in brightness when viewed from any direction and does not change color when viewed from any direction.
  また、本構成においては、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けられているため、蛍光体層から発光した蛍光のうち、基板13の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁51の側面で反射し、再び基板13側に取り出し可能な成分にリサイクルされる。つまり、互いに隣接した蛍光体層どうしの間に光反射性の障壁51が設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 Further, in this configuration, since the light-reflective barrier 51 is provided between the phosphor layers adjacent to each other, among the fluorescence emitted from the phosphor layer, the fluorescence component reflected at the interface of the substrate 13 and The fluorescent component that emits light on the side opposite to the light extraction side of the phosphor layer is reflected by the side surface of the light-reflective barrier 51 and recycled again to a component that can be extracted to the substrate 13 side. That is, by providing the light-reflective barrier 51 between the phosphor layers adjacent to each other, the fluorescent component emitted from the phosphor layer can be efficiently extracted to the outside.
  また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層61が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層61の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層61を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the wavelength selective transmission / reflection layer 61 is provided on the incident surface side on which the excitation light is incident in the phosphor layer, light is emitted on the opposite side (back side) of the phosphor layer to the light extraction side. The fluorescent component to be reflected is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer 61 and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer 61 on the side of the phosphor layer where the excitation light is incident, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
  また、本構造においては、蛍光体層と波長選択透過反射層61の間に、低屈折率層71が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射し、光取り出し側に、有効に発光として外部に取り出すことができる。一般的に、波長選択透過反射層61は、入射面に対して浅い角度で入射した光の反射率が低下するという特徴があるため、低屈折率層71と組合せることによって、浅い角度で入射した光も確実に反射させ、リサイクルすることができる。つまり、低屈折率層71を、蛍光体層91~93と波長選択透過反射層61の間に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 71 is provided between the phosphor layer and the wavelength selective transmission / reflection layer 61, light is emitted from the phosphor layer opposite to the light extraction side (back side). Among the fluorescent components, the fluorescent light incident on the interface is reflected at an angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, and can be effectively extracted to the outside as light emission on the light extraction side. In general, the wavelength-selective transmission / reflection layer 61 has a feature that the reflectance of light incident at a shallow angle with respect to the incident surface is reduced. Therefore, when combined with the low refractive index layer 71, the wavelength selective transmission / reflection layer 61 is incident at a shallow angle. The reflected light can be reliably reflected and recycled. That is, by providing the low refractive index layer 71 between the phosphor layers 91 to 93 and the wavelength selective transmission / reflection layer 61, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently. .
  また、本構造においては、基板13と蛍光体層91~93の間に、低屈折率層81が設けられているため、蛍光体層91~93の光取り出し側に発光する蛍光成分の内、蛍光体層と低屈折率層の界面の臨界角以上で、前記界面に入射する蛍光を反射することにより、蛍光体層から浅い角度で発光した蛍光成分が基板に入射するのを抑制することができる。つまり、基板には入射したものの、基板と外部との界面で反射され外部に取り出すことができず、基板内を導波してしまうロス成分を抑制することができる。つまり、低屈折率層81を、基板13と蛍光体層91~93の間に設けることによって、蛍光体層91~93から発光した蛍光成分をロスなく外部に取り出すことが可能となる。 In this structure, since the low refractive index layer 81 is provided between the substrate 13 and the phosphor layers 91 to 93, among the fluorescent components that emit light on the light extraction side of the phosphor layers 91 to 93, By reflecting the fluorescence incident on the interface at a critical angle greater than or equal to the critical angle of the interface between the phosphor layer and the low refractive index layer, it is possible to suppress the fluorescence component emitted at a shallow angle from the phosphor layer from entering the substrate. it can. That is, although it is incident on the substrate, it is reflected at the interface between the substrate and the outside and cannot be taken out to the outside, and a loss component that is guided in the substrate can be suppressed. That is, by providing the low refractive index layer 81 between the substrate 13 and the phosphor layers 91 to 93, the fluorescent component emitted from the phosphor layers 91 to 93 can be extracted outside without loss.
  また、本構造においては、光取出し方向から見て、蛍光体層は光吸収層によって仕切られているため、蛍光体層を導波して隣接画素に光が侵入することを防止することもできる。また、本構成においては、互いに隣接した配光調整層どうしの間に、前記障壁51と前記基板13の間にそれぞれ形成された光吸収層121が設けられているため、蛍光体層91~93から発光した蛍光が隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストを向上させることができる。 In addition, in this structure, since the phosphor layer is partitioned by the light absorption layer when viewed from the light extraction direction, light can be prevented from entering the adjacent pixels by being guided through the phosphor layer. . In this configuration, since the light absorption layers 121 formed between the barrier 51 and the substrate 13 are provided between the light distribution adjustment layers adjacent to each other, the phosphor layers 91 to 93 are provided. It is possible to prevent the fluorescence emitted from the light from entering the adjacent phosphor layer by light absorption, and the display contrast can be improved.
  また、本構成においては、前記障壁51の励起光入射面上に形成された第二の光吸収層141が設けられているため、励起光が蛍光体層に入射せず障壁51の底面に当たって反射され、隣接した蛍光体層に浸入することを光吸収によって防ぐことが可能となり、表示のコントラストの低下を防ぐことができる。 Further, in this configuration, since the second light absorption layer 141 formed on the excitation light incident surface of the barrier 51 is provided, the excitation light does not enter the phosphor layer and hits the bottom surface of the barrier 51 and is reflected. Thus, it is possible to prevent the penetration of the adjacent phosphor layers by light absorption, and it is possible to prevent the display contrast from being lowered.
  また、本構成においては、配光調整層171を出た光は、他の層を介することなく、そのまま外部に取り出されるため、配光調整層171の調整のみで発光プロファイルの最適化を図ることができる。また、本構成においては、前記配光調整層171上に形成された外光反射防止層181が設けられているため、外光が前記配光調整層181に当たって反射する外光反射成分を最小限に抑えることができる。つまり、明るい場所でのコントラスト低下を最小限に抑えることができる。 Further, in this configuration, since the light emitted from the light distribution adjustment layer 171 is extracted as it is without passing through other layers, the light emission profile is optimized only by adjusting the light distribution adjustment layer 171. Can do. Further, in this configuration, since the external light reflection preventing layer 181 formed on the light distribution adjustment layer 171 is provided, the external light reflection component that the external light reflects upon the light distribution adjustment layer 181 is minimized. Can be suppressed. That is, it is possible to minimize the decrease in contrast in a bright place.
「表示装置、蛍光体基板」
  次に、蛍光体基板と光源から構成される表示装置の実施形態の詳細を説明する。
  本実施形態の蛍光体基板を備えた表示装置において、蛍光体基板とは、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板のことである。また、本実施形態の表示装置において、光源とは、上述の発光デバイスの第一~第十六実施形態における、励起光源が形成された基板(発光素子基板)のことである。
"Display device, phosphor substrate"
Next, details of an embodiment of a display device including a phosphor substrate and a light source will be described.
In the display device including the phosphor substrate according to the present embodiment, the phosphor substrate refers to the phosphor layer, the light distribution adjusting layer, the barrier, and the light absorption layer in the first to sixteenth embodiments of the light emitting device described above. It is a substrate on which etc. are formed. In the display device of the present embodiment, the light source is a substrate (light emitting element substrate) on which an excitation light source is formed in the first to sixteenth embodiments of the light emitting device described above.
  本実施形態の表示装置において、光源としては、公知の紫外LED、青色LED、紫外発光無機EL素子、青色発光無機EL素子、紫外発光有機EL素子、青色発光有機EL素子等がもちいられるが、本実施形態はこれらの光源に限定されるものではなく、公知の材料、公知の製造方法で作製した光源を用いることができる。
  ここで、紫外光としては、主発光ピークが360~410nmの発光が好ましく、青色光としては、主発光ピークが410~470nmの発光が好ましい。
In the display device of this embodiment, as the light source, a known ultraviolet LED, blue LED, ultraviolet light emitting inorganic EL element, blue light emitting inorganic EL element, ultraviolet light emitting organic EL element, blue light emitting organic EL element, or the like is used. The embodiment is not limited to these light sources, and a light source produced by a known material or a known manufacturing method can be used.
Here, the ultraviolet light preferably emits light having a main light emission peak of 360 to 410 nm, and the blue light preferably has light emission of a main light emission peak of 410 to 470 nm.
(1)第一実施形態
  図19は、第一実施形態係る表示装置を構成する有機EL素子基板を示す概略断面図である。
  本実施形態の表示装置は、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板からなる蛍光体基板と、その蛍光体基板上に、平坦化膜等を介して貼り合わされた有機EL素子基板(光源)210とから概略構成されている。
(1) First Embodiment FIG. 19 is a schematic cross-sectional view showing an organic EL element substrate constituting a display device according to a first embodiment.
The display device of this embodiment includes a phosphor substrate comprising a substrate on which a phosphor layer, a light distribution adjusting layer, a barrier, a light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. The organic EL element substrate (light source) 210 is bonded to the phosphor substrate via a planarizing film or the like.
有機EL素子基板210は、基板211と、基板211の一方の面211a上に設けられた有機EL素子212とから概略構成されている。有機EL素子212は、基板211の一方の面211a上に順に設けられた、第一電極213と、有機EL層214と、第二電極215とから概略構成されている。すなわち、有機EL素子212は、基板211の一方の面211a上に、第一電極213および第二電極215からなる一対の電極と、これら一対の電極間に挟持された有機EL層214と、を備えている。第一電極213および第二電極215は、有機EL素子212の陽極または陰極として対で機能する。第一電極213と第二電極215との間の光学距離は、微小共振器構造(マイクロキャビティ構造)を構成するように調整されている。 The organic EL element substrate 210 includes a substrate 211 and an organic EL element 212 provided on one surface 211a of the substrate 211. The organic EL element 212 is schematically configured from a first electrode 213, an organic EL layer 214, and a second electrode 215 that are sequentially provided on one surface 211 a of the substrate 211. That is, the organic EL element 212 includes a pair of electrodes including the first electrode 213 and the second electrode 215 and an organic EL layer 214 sandwiched between the pair of electrodes on one surface 211a of the substrate 211. I have. The first electrode 213 and the second electrode 215 function as a pair as an anode or a cathode of the organic EL element 212. The optical distance between the first electrode 213 and the second electrode 215 is adjusted to constitute a microresonator structure (microcavity structure).
有機EL層214は、第一電極213側から第二電極215側に向かって順に積層された、正孔注入層216、正孔輸送層217、発光層218、正孔防止層219、電子輸送層220および電子注入層221から構成されている。
正孔注入層216、正孔輸送層217、発光層218、正孔防止層219、電子輸送層220および電子注入層221は、それぞれ単層構造または多層構造のいずれであってもよい。また、正孔注入層216、正孔輸送層217、発光層218、正孔防止層219、電子輸送層220および電子注入層221は、それぞれ有機薄膜または無機薄膜のいずれであってもよい。
The organic EL layer 214 is laminated in order from the first electrode 213 side to the second electrode 215 side, the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer. 220 and an electron injection layer 221.
The hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221 may each have a single layer structure or a multilayer structure. In addition, the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221 may each be an organic thin film or an inorganic thin film.
正孔注入層216は、第一電極213からの正孔の注入を効率よく行うものである。正孔輸送層217は、発光層218への正孔の輸送を効率よく行うものである。電子輸送層220は、発光層218への電子の輸送を効率よく行うものである。電子注入層221は、第二電極215からの電子の注入を効率よく行うものである。正孔注入層216、正孔輸送層217、電子輸送層220および電子注入層221は、キャリア注入輸送層に該当する。 The hole injection layer 216 efficiently injects holes from the first electrode 213. The hole transport layer 217 efficiently transports holes to the light emitting layer 218. The electron transport layer 220 efficiently transports electrons to the light emitting layer 218. The electron injection layer 221 efficiently injects electrons from the second electrode 215. The hole injection layer 216, the hole transport layer 217, the electron transport layer 220, and the electron injection layer 221 correspond to a carrier injection transport layer.
なお、有機EL素子212は上記の構成に限定されるものではなく、有機EL層214が、発光層の単層構造であっても、発光層とキャリア注入輸送層の多層構造であってもよい。有機EL素子212の構成としては、具体的には、下記のものが挙げられる。
(1)第一電極213と第二電極215の間に、発光層のみが設けられた構成(2)第一電極213側から第二電極215側に向かって、正孔輸送層および発光層がこの順に積層された構成
(3)第一電極213側から第二電極215側に向かって、発光層および電子輸送層がこの順に積層された構成
(4)第一電極213側から第二電極215側に向かって、正孔輸送層、発光層および電子輸送層がこの順に積層された構成
(5)第一電極213側から第二電極215側に向かって、正孔注入層、正孔輸送層、発光層および電子輸送層がこの順に積層された構成
(6)第一電極213側から第二電極215側に向かって、正孔注入層、正孔輸送層、発光層、電子輸送層および電子注入層がこの順に積層された構成
(7)第一電極213側から第二電極215側に向かって、正孔注入層、正孔輸送層、発光層、正孔防止層および電子輸送層がこの順に積層された構成
(8)第一電極213側から第二電極215側に向かって、正孔注入層、正孔輸送層、発光層、正孔防止層、電子輸送層および電子注入層がこの順に積層された構成
(9)第一電極213側から第二電極215側に向かって、正孔注入層、正孔輸送層、電子防止層、発光層、正孔防止層、電子輸送層および電子注入層がこの順に積層された構成これら発光層、正孔注入層、正孔輸送層、正孔防止層、電子防止層、電子輸送層および電子注入層の各層は、単層構造または多層構造のいずれであってもよい。また、発光層、正孔注入層、正孔輸送層、正孔防止層、電子防止層、電子輸送層および電子注入層の各層は、それぞれ有機薄膜または無機薄膜のいずれであってもよい。
The organic EL element 212 is not limited to the above configuration, and the organic EL layer 214 may have a single layer structure of a light emitting layer or a multilayer structure of a light emitting layer and a carrier injection / transport layer. . Specific examples of the configuration of the organic EL element 212 include the following.
(1) Configuration in which only the light emitting layer is provided between the first electrode 213 and the second electrode 215 (2) The hole transport layer and the light emitting layer are formed from the first electrode 213 side toward the second electrode 215 side. Structure (3) laminated in this order (3) Structure in which a light emitting layer and an electron transport layer are laminated in this order from the first electrode 213 side to the second electrode 215 side (4) Second electrode 215 from the first electrode 213 side A structure in which a hole transport layer, a light emitting layer, and an electron transport layer are laminated in this order toward the side (5) From the first electrode 213 side to the second electrode 215 side, the hole injection layer, the hole transport layer (6) A structure in which a light emitting layer and an electron transport layer are laminated in this order (6) From the first electrode 213 side to the second electrode 215 side, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, Structure in which injection layers are laminated in this order (7) First electrode 213 side A structure in which a hole injection layer, a hole transport layer, a light emitting layer, a hole prevention layer, and an electron transport layer are laminated in this order toward the second electrode 215 side (8) From the first electrode 213 side to the second electrode 215 A structure in which a hole injection layer, a hole transport layer, a light emitting layer, a hole prevention layer, an electron transport layer, and an electron injection layer are laminated in this order toward the side (9) From the first electrode 213 side to the second electrode 215 A structure in which a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer are laminated in this order toward the side, these light emitting layer, hole injection layer, Each of the hole transport layer, the hole prevention layer, the electron prevention layer, the electron transport layer and the electron injection layer may have a single layer structure or a multilayer structure. In addition, each of the light emitting layer, the hole injection layer, the hole transport layer, the hole prevention layer, the electron prevention layer, the electron transport layer, and the electron injection layer may be either an organic thin film or an inorganic thin film.
また、第一電極213の端面を覆うようにエッジカバー222が形成されている。すなわち、エッジカバー222は、第一電極213と第二電極215の間でリークを起こすことを防止するために、第一電極213と第二電極215の間において、基板211の一方の面211aに形成された第一電極213のエッジ部を覆うように設けられている。 An edge cover 222 is formed so as to cover the end face of the first electrode 213. That is, the edge cover 222 is formed on the one surface 211a of the substrate 211 between the first electrode 213 and the second electrode 215 in order to prevent leakage between the first electrode 213 and the second electrode 215. It is provided so as to cover the edge part of the formed first electrode 213.
以下、有機EL素子基板210を構成する各構成部材およびその形成方法について具体的に説明するが、本実施形態はこれら構成部材および形成方法に限定されるものではない。 Hereinafter, although each structural member which comprises the organic EL element substrate 210, and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
基板211としては、例えば、ガラス、石英等からなる無機材料基板、ポリエチレンテレフタレート、ポリカルバゾール、ポリイミド等からなるプラスチック基板、アルミナ等からなるセラミックス基板等の絶縁性基板、または、アルミニウム(Al)、鉄(Fe)等からなる金属基板、または、これらの基板上に酸化シリコン(SiO)、有機絶縁材料等からなる絶縁物を表面にコーティングした基板、アルミニウム等からなる金属基板の表面を陽極酸化等の方法で絶縁化処理を施した基板等が挙げられるが、本実施形態はこれらの基板に限定されるものではない。これらの基板の中でも、ストレスなく湾曲部、折り曲げ部を形成することが可能となることから、プラスチック基板または金属基板を用いることが好ましい。 As the substrate 211, for example, an inorganic material substrate made of glass, quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide, or the like, an insulating substrate such as a ceramic substrate made of alumina, or the like, or aluminum (Al), iron A metal substrate made of (Fe) or the like, or a substrate coated with an insulating material made of silicon oxide (SiO 2 ), an organic insulating material or the like on the substrate, or a metal substrate made of aluminum or the like is anodized. Although the board | substrate etc. which performed the insulation process by this method are mentioned, this embodiment is not limited to these board | substrates. Among these substrates, it is possible to form a bent portion and a bent portion without stress, and therefore it is preferable to use a plastic substrate or a metal substrate.
さらに、プラスチック基板に無機材料をコーティングした基板、金属基板に無機絶縁材料をコーティングした基板が好ましい。このような無機材料をコーティングした基板を用いることにより、プラスチック基板を有機EL素子基板の基板として用いた場合に最大の問題となる水分の透過による有機ELの劣化(有機ELは、特に低量の水分に対しても劣化が起こることが知られている。)を解消することが可能となる。また、金属基板を有機EL素子基板の基板として用いた場合の最大の問題となる金属基板の突起によるリーク(ショート)(有機EL層の膜厚は、100~200nm程度と非常に薄いため、突起による画素部での電流にリーク(ショート)が、顕著に起こることが知られている。)を解消することが可能となる。 Furthermore, a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material are preferable. By using a substrate coated with such an inorganic material, deterioration of organic EL due to moisture permeation, which is the biggest problem when a plastic substrate is used as a substrate of an organic EL element substrate (organic EL is particularly low in quantity) It is known that deterioration also occurs with respect to moisture.). In addition, leakage (short) due to protrusions on the metal substrate, which is the biggest problem when a metal substrate is used as the substrate of the organic EL element substrate (the film thickness of the organic EL layer is very thin, about 100 to 200 nm. It is known that leakage (short-circuiting) occurs in the current in the pixel portion due to the above.
また、TFTを形成する場合には、基板211としては、500℃以下の温度で融解せず、歪みも生じない基板を用いることが好ましい。また、一般的な金属基板は、ガラスと熱膨張率が異なるため、従来の生産装置で金属基板上にTFTを形成することは困難であるが、線膨張係数が1×10-5/ ℃ 以下の鉄- ニッケル系合金である金属基板を用いて、線膨張係数をガラスに合わせ込むことにより、金属基板上にTFTを従来の生産装置を用いて安価に形成することが可能となる。また、プラスチック基板の場合には、耐熱温度が非常に低いため、ガラス基板上にTFTを形成した後、プラスチック基板にガラス基板上のTFTを転写することにより、プラスチック基板上にTFTを転写形成することができる。 In the case of forming a TFT, it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or lower and does not generate distortion as the substrate 211. In addition, since a general metal substrate has a coefficient of thermal expansion different from that of glass, it is difficult to form a TFT on a metal substrate with a conventional production apparatus, but the linear expansion coefficient is 1 × 10 −5 / ° C. or less. By using a metal substrate that is an iron-nickel alloy of this type and adjusting the linear expansion coefficient to glass, it becomes possible to form TFTs on the metal substrate at low cost using a conventional production apparatus. In the case of a plastic substrate, since the heat-resistant temperature is very low, after forming the TFT on the glass substrate, the TFT on the glass substrate is transferred to the plastic substrate, thereby transferring the TFT onto the plastic substrate. be able to.
さらに、有機EL層214からの発光を基板211とは反対側から取り出す場合には、基板としての制約はないが、有機EL層214からの発光を基板211側から取り出す場合には、有機EL層214からの発光を外部に取り出すために、透明または半透明の基板を用いる必要がある。 Further, when light emission from the organic EL layer 214 is taken out from the side opposite to the substrate 211, there is no restriction as a substrate, but when light emission from the organic EL layer 214 is taken out from the substrate 211 side, the organic EL layer In order to extract light emitted from 214 to the outside, it is necessary to use a transparent or translucent substrate.
基板211に形成されるTFTは、有機EL素子212を形成する前に、予め基板211の一方の面211aに形成され、画素スイッチング用素子および有機EL素子駆動用素子として機能する。本実施形態におけるTFTとしては、公知のTFTが挙げられる。また、TFTの代わりに、金属-絶縁体-金属(MIM)ダイオードを用いることもできる。 The TFT formed on the substrate 211 is formed in advance on one surface 211a of the substrate 211 before the organic EL element 212 is formed, and functions as a pixel switching element and an organic EL element driving element. As the TFT in this embodiment, a known TFT can be cited. In place of the TFT, a metal-insulator-metal (MIM) diode can also be used.
アクティブ駆動型有機EL表示装置、有機EL表示装置に用いることが可能なTFTは、公知の材料、構造および形成方法を用いて形成することができる。
TFTを構成する活性層の材料としては、例えば、非晶質シリコン(アモルファスシリコン)、多結晶シリコン(ポリシリコン)、微結晶シリコン、セレン化カドミウム等の無機半導体材料、酸化亜鉛、酸化インジウム-酸化ガリウム-酸化亜鉛等の酸化物半導体材料、または、ポリチオフェン誘導体、チオフェンオリゴマー、ポリ(p-フェリレンビニレン)誘導体、ナフタセン、ペンタセン等の有機半導体材料が挙げられる。また、TFTの構造としては、例えば、スタガ型、逆スタガ型、トップゲート型、コプレーナ型等が挙げられる。
TFTs that can be used in active drive organic EL display devices and organic EL display devices can be formed using known materials, structures, and formation methods.
Examples of the material of the active layer constituting the TFT include inorganic semiconductor materials such as amorphous silicon (amorphous silicon), polycrystalline silicon (polysilicon), microcrystalline silicon, cadmium selenide, zinc oxide, indium oxide-oxide Examples thereof include oxide semiconductor materials such as gallium-zinc oxide, and organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene. Examples of the TFT structure include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.
TFTを構成する活性層の形成方法としては、(1)プラズマ誘起化学気相成長(PECVD)法により成膜したアモルファスシリコンに不純物をイオンドーピングする方法、(2)シラン(SiH)ガスを用いた減圧化学気相成長(LPCVD)法によりアモルファスシリコンを形成し、固相成長法によりアモルファスシリコンを結晶化してポリシリコンを得た後、イオン打ち込み法によりイオンドーピングする方法、(3)Siガスを用いたLPCVD法またはSiHガスを用いたPECVD法によりアモルファスシリコンを形成し、エキシマレーザー等のレーザーによりアニールし、アモルファスシリコンを結晶化してポリシリコンを得た後、イオンドーピングを行う方法(低温プロセス)、(4)LPCVD法またはPECVD法によりポリシリコン層を形成し、1000℃以上で熱酸化することによりゲート絶縁膜を形成し、その上に、nポリシリコンのゲート電極を形成し、その後、イオンドーピングを行う方法(高温プロセス)、(5)有機半導体材料をインクジェット法等により形成する方法、(6)有機半導体材料の単結晶膜を得る方法等が挙げられる。 As an active layer forming method for forming a TFT, (1) a method of ion doping impurities into amorphous silicon formed by plasma induced chemical vapor deposition (PECVD), and (2) a silane (SiH 4 ) gas is used. Forming amorphous silicon by low pressure chemical vapor deposition (LPCVD), crystallizing amorphous silicon by solid phase growth to obtain polysilicon, and then ion doping by ion implantation, (3) Si 2 H Amorphous silicon is formed by LPCVD using 6 gases or PECVD using SiH 4 gas, annealed by a laser such as an excimer laser, etc., and amorphous silicon is crystallized to obtain polysilicon, followed by ion doping (Low temperature process), (4) LPCVD method or The polysilicon layer is formed by ECVD method, a gate insulating film formed by thermal oxidation at 1000 ° C. or higher, thereon to form a gate electrode of the n + polysilicon, then, a method of performing ion doping (high temperature Process), (5) a method of forming an organic semiconductor material by an inkjet method, and (6) a method of obtaining a single crystal film of the organic semiconductor material.
本実施形態におけるTFTを構成するゲート絶縁膜は、公知の材料を用いて形成することができる。ゲート絶縁膜としては、例えば、PECVD法、LPCVD法等により形成されたSiOまたはポリシリコン膜を熱酸化して得られるSiO等からなる絶縁膜が挙げられる。 The gate insulating film constituting the TFT in this embodiment can be formed using a known material. As the gate insulating film, for example, PECVD method, and a SiO 2 or polysilicon film formed by the LPCVD method or the like insulating film made of SiO 2 or the like obtained by thermal oxidation.
また、本実施形態におけるTFTの信号電極線、走査電極線、共通電極線、第一駆動電極および第二駆動電極は、公知の材料を用いて形成することができる。これら信号電極線、走査電極線、共通電極線、第一駆動電極および第二駆動電極の材料としては、例えば、タンタル(Ta)、アルミニウム(Al)、銅(Cu)等が挙げられる。有機EL素子基板210のTFTは、上記のような構成とすることができるが、本実施形態は、これらの材料、構造および形成方法に限定されるものではない。 In addition, the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT in this embodiment can be formed using a known material. Examples of the material of the signal electrode line, the scan electrode line, the common electrode line, the first drive electrode, and the second drive electrode include tantalum (Ta), aluminum (Al), copper (Cu), and the like. The TFT of the organic EL element substrate 210 can be configured as described above, but the present embodiment is not limited to these materials, structures, and formation methods.
アクティブ駆動型有機EL表示装置、有機EL表示装置に用いることが可能な層間絶縁膜は、公知の材料を用いて形成することができる。層間絶縁膜の材料としては、例えば、酸化シリコン(SiO)、窒化シリコン(SiNまたはSi)、酸化タンタル(TaOまたはTa)等の無機材料、または、アクリル樹脂、レジスト材料等の有機材料等が挙げられる。
また、層間絶縁膜の形成方法としては、化学気相成長(CVD)法、真空蒸着法等のドライプロセス、スピンコート法等のウエットプロセスが挙げられる。また、必要に応じて、フォトリソグラフィー法等により、層間絶縁膜をパターニングすることもできる。
The interlayer insulating film that can be used in the active drive organic EL display device and the organic EL display device can be formed using a known material. As a material of the interlayer insulating film, for example, inorganic materials such as silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O 5 ), acrylic resin, resist material Organic materials, etc. are mentioned.
Examples of the method for forming the interlayer insulating film include a dry process such as a chemical vapor deposition (CVD) method and a vacuum deposition method, and a wet process such as a spin coating method. If necessary, the interlayer insulating film can be patterned by a photolithography method or the like.
有機EL素子212からの発光を基板211とは反対側(第二電極215側)から取り出す場合には、外光が基板211の一方の面211aに形成されたTFTに入射して、TFTの特性に変化が生じることを防ぐ目的で、遮光性を兼ね備えた遮光性絶縁膜を形成することが好ましい。また、上記の層間絶縁膜と遮光性絶縁膜を組み合わせて用いることもできる。遮光性絶縁膜の材料としては、例えば、フタロシアニン、キナクロドン等の顔料または染料をポリイミド等の高分子樹脂に分散したもの、カラーレジスト、ブラックマトリクス材料、NiZnFe等の無機絶縁材料等が挙げられるが、本実施形態はこれらの材料および形成方法に限定されるものではない。 When light emitted from the organic EL element 212 is extracted from the side opposite to the substrate 211 (second electrode 215 side), external light is incident on the TFT formed on the one surface 211a of the substrate 211, and the characteristics of the TFT. In order to prevent the change from occurring, it is preferable to form a light-shielding insulating film having light-shielding properties. Further, the interlayer insulating film and the light-shielding insulating film can be used in combination. Examples of the material of the light-shielding insulating film include, for example, pigments or dyes such as phthalocyanine and quinaclonone dispersed in a polymer resin such as polyimide, color resists, black matrix materials, and inorganic insulating materials such as Ni x Zn y Fe 2 O 4 Although materials etc. are mentioned, this embodiment is not limited to these materials and a formation method.
アクティブ駆動型有機EL表示装置において、基板211の一方の面211aにTFT等を形成した場合には、その表面に凸凹が形成され、この凸凹によって有機EL素子212の欠陥(例えば、画素電極の欠損、有機EL層の欠損、第二電極の断線、第一電極と第二電極の短絡、耐圧の低下等)等が発生するおそれがある。これらの欠陥を防止するために、層間絶縁膜上に平坦化膜を設けてもよい。 In the active drive type organic EL display device, when a TFT or the like is formed on one surface 211a of the substrate 211, an unevenness is formed on the surface, and this unevenness causes a defect in the organic EL element 212 (for example, a pixel electrode defect). There is a risk that a defect of the organic EL layer, a disconnection of the second electrode, a short circuit between the first electrode and the second electrode, a decrease in breakdown voltage, or the like) may occur. In order to prevent these defects, a planarizing film may be provided on the interlayer insulating film.
このような平坦化膜は、公知の材料を用いて形成することができる。平坦化膜の材料としては、例えば、酸化シリコン、窒化シリコン、酸化タンタル等の無機材料、ポリイミド、アクリル樹脂、レジスト材料等の有機材料等が挙げられる。平坦化膜の形成方法としては、例えば、CVD法、真空蒸着法等のドライプロセス、スピンコート法等のウエットプロセス等が挙げられるが、本実施形態はこれらの材料および形成方法に限定されるものではない。また、平坦化膜は、単層構造または多層構造のいずれであってもよい。 Such a planarization film can be formed using a known material. Examples of the material for the planarizing film include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material. Examples of the method for forming the planarization film include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method. However, the present embodiment is limited to these materials and the formation method. is not. Further, the planarization film may have either a single layer structure or a multilayer structure.
第一電極213および第二電極215は、有機EL素子212の陽極または陰極として対で機能する。つまり、第一電極213を陽極とした場合、第二電極215は陰極となり、第一電極213を陰極とした場合、第二電極215は陽極となる。 The first electrode 213 and the second electrode 215 function as a pair as an anode or a cathode of the organic EL element 212. That is, when the first electrode 213 is an anode, the second electrode 215 is a cathode, and when the first electrode 213 is a cathode, the second electrode 215 is an anode.
第一電極213および第二電極215を形成する電極材料としては、公知の電極材料を用いることができる。陽極を形成する電極材料としては、有機EL層214への正孔の注入をより効率よく行う観点から、仕事関数が4.5eV以上の金(Au)、白金(Pt)、ニッケル(Ni)等の金属、および、インジウム(In)と錫(Sn)からなる酸化物(ITO)、錫(Sn)の酸化物(SnO)、インジウム(In)と亜鉛(Zn)からなる酸化物(IZO)等の透明電極材料等が挙げられる。 As an electrode material for forming the first electrode 213 and the second electrode 215, a known electrode material can be used. As an electrode material for forming the anode, gold (Au), platinum (Pt), nickel (Ni) or the like having a work function of 4.5 eV or more from the viewpoint of more efficiently injecting holes into the organic EL layer 214. Metal, oxide (ITO) composed of indium (In) and tin (Sn), oxide (SnO 2 ) of tin (Sn), oxide (IZO) composed of indium (In) and zinc (Zn) Transparent electrode materials and the like.
また、陰極を形成する電極材料としては、有機EL層214への電子の注入をより効率よく行う観点から、仕事関数が4.5eV以下のリチウム(Li)、カルシウム(Ca)、セリウム(Ce)、バリウム(Ba)、アルミニウム(Al)等の金属、または、これらの金属を含有するMg:Ag合金、Li:Al合金等の合金が挙げられる。 Moreover, as an electrode material for forming the cathode, lithium (Li), calcium (Ca), cerium (Ce) having a work function of 4.5 eV or less from the viewpoint of more efficiently injecting electrons into the organic EL layer 214. And metals such as barium (Ba) and aluminum (Al), or alloys such as Mg: Ag alloys and Li: Al alloys containing these metals.
第一電極213および第二電極215は、上記の材料を用いて、EB蒸着法、スパッタリング法、イオンプレーティング法、抵抗加熱蒸着法等の公知の方法により形成することができるが、本実施形態はこれらの形成方法に限定されるものではない。また、必要に応じて、フォトリソグラフフィー法、レーザー剥離法により形成した電極をパターニングすることもでき、シャドーマスクと組み合わせることで直接パターニングした電極を形成することもできる。
第一電極213および第二電極215の膜厚は、50nm以上であることが好ましい。膜厚が50nm未満の場合には、配線抵抗が高くなり、駆動電圧が上昇するおそれがある。
The first electrode 213 and the second electrode 215 can be formed by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above-described materials. Is not limited to these forming methods. Moreover, the electrode formed by the photolithographic method and the laser peeling method can also be patterned as needed, and the electrode patterned directly by combining with a shadow mask can also be formed.
The film thicknesses of the first electrode 213 and the second electrode 215 are preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance increases and the drive voltage may increase.
表示装置の色純度の向上、発光効率の向上、正面輝度の向上等の目的でマイクロキャビティ効果を用いる場合、有機EL層214からの発光を第一電極213または第二電極215側から取り出す場合には、第一電極213または第二電極215として半透明電極を用いることが好ましい。半透明電極の材料としては、金属の半透明電極単体、もしくは、金属の半透明電極と透明電極材料を組み合わせたものを用いることができる。特に、半透明電極の材料としては、反射率と透過率の観点から、銀が好ましい。 When the microcavity effect is used for the purpose of improving the color purity of the display device, improving the light emission efficiency, improving the front luminance, etc., or when emitting light from the organic EL layer 214 from the first electrode 213 or the second electrode 215 side It is preferable to use a translucent electrode as the first electrode 213 or the second electrode 215. As a material for the semitransparent electrode, a metal semitransparent electrode alone or a combination of a metal translucent electrode and a transparent electrode material can be used. In particular, as a material for the semitransparent electrode, silver is preferable from the viewpoint of reflectance and transmittance.
半透明電極の膜厚は、5~30nmが好ましい。半透明電極の膜厚が5nm未満の場合には、光の反射が十分行えず、干渉の効果を十分得るとこができない。また、半透明電極の膜厚が30nmを超える場合には、光の透過率が急激に低下することから、表示装置の輝度および発光効率が低下するおそれがある。
また、第一電極213または第二電極215としては、光を反射する反射率の高い電極を用いることが好ましい。反射率の高い電極としては、例えば、アルミニウム、銀、金、アルミニウム-リチウム合金、アルミニウム-ネオジウム合金、アルミニウム-シリコン合金等からなる反射性金属電極(反射電極)、この反射性金属電極と透明電極を組み合わせた電極等が挙げられる。
The film thickness of the translucent electrode is preferably 5 to 30 nm. When the film thickness of the translucent electrode is less than 5 nm, the light cannot be sufficiently reflected, and the interference effect cannot be obtained sufficiently. In addition, when the film thickness of the translucent electrode exceeds 30 nm, the light transmittance is rapidly decreased, so that the luminance and light emission efficiency of the display device may be decreased.
In addition, as the first electrode 213 or the second electrode 215, it is preferable to use an electrode with high reflectivity that reflects light. Examples of the electrode having high reflectivity include a reflective metal electrode (reflective electrode) made of, for example, aluminum, silver, gold, aluminum-lithium alloy, aluminum-neodymium alloy, aluminum-silicon alloy, and the like. The electrode etc. which combined are mentioned.
電荷注入輸送層は、電荷(正孔、電子)の電極からの注入と発光層への輸送(注入)をより効率よく行う目的で、電荷注入層(正孔注入層216、電子注入層221)と電荷輸送層(正孔輸送層217、電子輸送層220)に分類され、以下に例示する電荷注入輸送材料のみから構成されていてもよく、任意に添加剤(ドナー、アクセプター等)を含んでいてもよく、これらの材料が高分子材料(結着用樹脂)または無機材料中に分散された構成であってもよい。 The charge injection / transport layer is a charge injection layer (hole injection layer 216, electron injection layer 221) for the purpose of more efficiently injecting charges (holes, electrons) from the electrode and transporting (injection) to the light emitting layer. And a charge transport layer (hole transport layer 217, electron transport layer 220), and may be composed only of the charge injection transport material exemplified below, and optionally includes additives (donor, acceptor, etc.). Alternatively, a structure in which these materials are dispersed in a polymer material (binding resin) or an inorganic material may be used.
電荷注入輸送材料としては、有機EL素子用、有機光導電体用の公知の電荷注入輸送材料を用いることができる。このような電荷注入輸送材料は、正孔注入輸送材料および電子注入輸送材料に分類され、これらの具体的な化合物を以下に例示するが、本実施形態はこれらの材料に限定されるものではない。 As the charge injecting and transporting material, known charge injecting and transporting materials for organic EL elements and organic photoconductors can be used. Such charge injecting and transporting materials are classified into hole injecting and transporting materials and electron injecting and transporting materials. Specific examples of these compounds are given below, but this embodiment is not limited to these materials. .
正孔注入層216および正孔輸送層217の材料としては、公知のものが用いられ、例えば、酸化バナジウム(V)、酸化モリブデン(MoO)等の酸化物や無機p型半導体材料;ポルフィリン化合物、N,N’-ビス(3-メチルフェニル)-N,N’-ビス(フェニル)-ベンジジン(TPD)、N,N’-ジ(ナフタレン-1-イル)-N,N’-ジフェニル-ベンジジン(α-NPD)、4,4’,4”-トリス(カルバゾール-9-イル)トリフェニルアミン(TCTA)、N,N-ジカルバゾリル-3,5-ベンゼン(m-CP)、4,4’-(シクロヘキサン-1,1-ジイル)ビス(N,N-ジ-p-トリルアニリン)(TAPC)、2,2’-ビス(N,N-ジフェニルアミン)-9,9’-スピロビフルオレン(DPAS)、N1,N1’-(ビフェニル-4,4’-ジイル)ビス(N1-フェニル-N4,N4-ジ-m-トリルベンゼン-1,4-ジアミン)(DNTPD)、N3,N3,N3”’, N3”’-テトラ-p-トリル-[1,1’:2’,1”:2”,1”’-クォーターフェニル]-3,3”’-ジアミン(BTPD)、4,4’-(ジフェニルシランジイル)ビス(N,N-ジ-p-トリルアニリン)(DTASi)、2,2-ビス(4-カルバゾール-9-イルフェニル)アダマンティン(Ad-Cz)等の芳香族第三級アミン化合物;ヒドラゾン化合物、キナクリドン化合物、スチリルアミン化合物等の低分子含窒素化合物;ポリアニリン(PANI)、ポリアニリン-樟脳スルホン酸(PANI-CSA)、3,4-ポリエチレンジオキシチオフェン/ポリスチレンサルフォネイト(PEDOT/PSS)、ポリ(トリフェニルアミン)誘導体(Poly-TPD)、ポリビニルカルバゾール(PVCz)、ポリ(p-フェニレンビニレン)(PPV)、ポリ(p-ナフタレンビニレン)(PNV)等の高分子化合物;2-メチル-9,10-ビス(ナフタレン-2-イル)アントラセン(MADN)等の芳香族炭化水素化合物等が挙げられる。 As materials for the hole injection layer 216 and the hole transport layer 217, known materials are used. For example, oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), and inorganic p-type semiconductor materials are used. A porphyrin compound, N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N ′ -Diphenyl-benzidine (α-NPD), 4,4 ', 4 "-tris (carbazol-9-yl) triphenylamine (TCTA), N, N-dicarbazolyl-3,5-benzene (m-CP), 4,4 ′-(cyclohexane-1,1-diyl) bis (N, N-di-p-tolylaniline) (TAPC), 2,2′-bis (N, N-diphenylamine) -9,9′- Spirofluorene (DPA S), N1, N1 ′-(biphenyl-4,4′-diyl) bis (N1-phenyl-N4, N4-di-m-tolylbenzene-1,4-diamine) (DNTPD), N3, N3, N3 "', N3"'-tetra-p-tolyl- [1,1 ': 2', 1 ": 2", 1 "'-quarterphenyl] -3,3"'-diamine (BTPD), 4,4 Aromatics such as'-(diphenylsilanediyl) bis (N, N-di-p-tolylaniline) (DTASi), 2,2-bis (4-carbazol-9-ylphenyl) adamantine (Ad-Cz) Tertiary amine compounds; low molecular nitrogen compounds such as hydrazone compounds, quinacridone compounds, styrylamine compounds; polyaniline (PANI), polyaniline-camphor sulfonic acid (PANI-CSA), 3,4-polyethylenedioxythio Fen / polystyrene sulfonate (PEDOT / PSS), poly (triphenylamine) derivative (Poly-TPD), polyvinylcarbazole (PVCz), poly (p-phenylene vinylene) (PPV), poly (p-naphthalene vinylene) ( PNV) and the like; and aromatic hydrocarbon compounds such as 2-methyl-9,10-bis (naphthalen-2-yl) anthracene (MADN).
正孔注入層216の材料としては、陽極からの正孔の注入および輸送をより効率よく行う観点から、正孔輸送層217の材料よりも、最高被占分子軌道(HOMO)のエネルギー準位が低い材料を用いることが好ましい。また、正孔輸送層217の材料としては、正孔注入層216の材料よりも、正孔の移動度が高い材料を用いることが好ましい。 As the material of the hole injection layer 216, the energy level of the highest occupied molecular orbital (HOMO) is higher than that of the material of the hole transport layer 217 from the viewpoint of more efficiently injecting and transporting holes from the anode. It is preferable to use a low material. As a material for the hole transport layer 217, a material having higher hole mobility than the material for the hole injection layer 216 is preferably used.
正孔注入層216および正孔輸送層217は、任意に添加剤(ドナー、アクセプター等)を含んでいてもよい。そして、正孔の注入性および輸送性をより向上させるためには、正孔注入層216および正孔輸送層217は、アクセプターを含むことが好ましい。アクセプターとしては、有機EL素子向けの公知のアクセプター材料を用いることができる。これらの具体的な化合物を以下に例示するが、本実施形態はこれらの材料に限定されるものではない。 The hole injection layer 216 and the hole transport layer 217 may optionally contain an additive (donor, acceptor, etc.). In order to further improve the hole injection property and the transport property, the hole injection layer 216 and the hole transport layer 217 preferably include an acceptor. As the acceptor, a known acceptor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
アクセプターは、無機材料または有機材料のいずれであってもよい。
無機材料としては、金(Au)、白金(Pt)、タングステン(W)、イリジウム(Ir)、オキシ塩化リン(POCl)、六フッ化ヒ酸イオン(AsF )、塩素(Cl)、臭素(Br)、ヨウ素(I)、酸化バナジウム(V)、酸化モリブデン(MoO)等が挙げられる。
The acceptor may be either an inorganic material or an organic material.
Examples of the inorganic material include gold (Au), platinum (Pt), tungsten (W), iridium (Ir), phosphorus oxychloride (POCl 3 ), hexafluoroarsenate ion (AsF 6 ), chlorine (Cl), Examples include bromine (Br), iodine (I), vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and the like.
有機材料としては、7,7,8,8,-テトラシアノキノジメタン(TCNQ)、テトラフルオロテトラシアノキノジメタン(TCNQF)、テトラシアノエチレン(TCNE)、ヘキサシアノブタジエン(HCNB)、ジシクロジシアノベンゾキノン(DDQ)等のシアノ基を有する化合物;トリニトロフルオレノン(TNF)、ジニトロフルオレノン(DNF)等のニトロ基を有する化合物;フルオラニル;クロラニル;ブロマニル等が挙げられる。
これらの中でも、正孔濃度を増加させる効果がより高いことから、TCNQ、TCNQF、TCNE、HCNB、DDQ等のシアノ基を有する化合物が好ましい。
Examples of organic materials include 7,7,8,8, -tetracyanoquinodimethane (TCNQ), tetrafluorotetracyanoquinodimethane (TCNQF 4 ), tetracyanoethylene (TCNE), hexacyanobutadiene (HCNB), and dicyclohexane. Compounds having a cyano group such as dicyanobenzoquinone (DDQ); compounds having a nitro group such as trinitrofluorenone (TNF) and dinitrofluorenone (DNF); fluoranil; chloranil; bromanyl and the like.
Among these, compounds having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB, and DDQ are preferable because the effect of increasing the hole concentration is higher.
正孔防止層219、電子輸送層220および電子注入層221の材料としては、公知のものが用いられ、低分子材料であれば、n型半導体である無機材料;1,3-ビス[2-(2,2’-ビピリジン-6-イル)-1,3,4-オキサジアゾ-5-イル]ベンゼン(Bpy-OXD)、1,3-ビス(5-(4-(tert-ブチル)フェニル)-1,3,4-オキサジアゾールー2-イル)ベンゼン(OXD7)等のオキサジアゾール誘導体;3-(4-ビフェニル)-4-フェニル-5-tert-ブチルフェニル-1,2,4-トリアゾール(TAZ)等のトリアゾール誘導体;チオピラジンジオキシド誘導体;ベンゾキノン誘導体;ナフトキノン誘導体;アントラキノン誘導体;ジフェノキノン誘導体;フルオレノン誘導体;ベンゾジフラン誘導体;8-ヒドロキシキノリノラート-リチウム(Liq)等のキノリン誘導体;2,7-ビス[2-(2,2’-ビピリジン-6-イル)-1,3,4-オキサジアゾ-5-イル]-9,9-ジメチルフルオレン(Bpy-FOXD)等のフルオレン誘導体;1,3,5-トリ[(3-ピリジル)-フェン-3-イル]ベンゼン(TmPyPB)、1,3,5-トリ[(3-ピリジル)-フェン-3-イル]ベンゼン(TpPyPB)等のベンゼン誘導体;2,2’,2”-(1,3,5-ベンジントリイル)-トリス(1-フェニル-1-H-ベンゾイミダゾール)(TPBI)等のベンゾイミダゾール誘導体;3,5-ジ(ピレン-1-イル)ピリジン(PY1)等のピリジン誘導体;3,3’,5,5’-テトラ[(m-ピリジル)-フェン-3-イル]ビフェニル(BP4mPy)等のビフェニル誘導体;4,7-ジフェニル-1,10-フェナントロリン(BPhen)、2,9-ジメチル-4,7-ジフェニル-1,10-フェナントロリン(BCP)等のフェナントロリン誘導体;トリス(2,4,6-トリメチル-3-(ピリジン-3-イル)フェニル)ボラン(3TPYMB)等のトリフェニルボラン誘導体;ジフェニルビス(4-(ピリジン-3-イル)フェニル)シラン(DPPS)等のテトラフェニルシラン誘導体;ポリ(オキサジアゾール)(Poly-OXZ)、ポリスチレン誘導体(PSS)等が挙げられる。特に、電子注入層221の材料としては、フッ化リチウム(LiF)、フッ化バリウム(BaF)等のフッ化物;酸化リチウム(LiO)等の酸化物等が挙げられる。 As materials for the hole blocking layer 219, the electron transporting layer 220, and the electron injecting layer 221, known materials are used. In the case of a low molecular material, an inorganic material that is an n-type semiconductor; 1,3-bis [2- (2,2′-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] benzene (Bpy-OXD), 1,3-bis (5- (4- (tert-butyl) phenyl) Oxadiazole derivatives such as -1,3,4-oxadiazol-2-yl) benzene (OXD7); 3- (4-biphenyl) -4-phenyl-5-tert-butylphenyl-1,2,4 -Triazole derivatives such as triazole (TAZ); thiopyrazine dioxide derivative; benzoquinone derivative; naphthoquinone derivative; anthraquinone derivative; diphenoquinone derivative; fluorenone derivative; Difuran derivatives; quinoline derivatives such as 8-hydroxyquinolinolato-lithium (Liq); 2,7-bis [2- (2,2′-bipyridin-6-yl) -1,3,4-oxadiazo-5- Yl] -9,9-dimethylfluorene (Bpy-FOXD) and the like; 1,3,5-tri [(3-pyridyl) -phen-3-yl] benzene (TmPyPB), 1,3,5- Benzene derivatives such as tri [(3-pyridyl) -phen-3-yl] benzene (TpPyPB); 2,2 ′, 2 ″-(1,3,5-benzentriyl) -tris (1-phenyl-1 Benzimidazole derivatives such as —H-benzimidazole) (TPBI); pyridine derivatives such as 3,5-di (pyren-1-yl) pyridine (PY1); 3,3 ′, 5,5′-tetra [(m -Pirigi Biphenyl derivatives such as (l) -phen-3-yl] biphenyl (BP4mPy); 4,7-diphenyl-1,10-phenanthroline (BPhen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Phenanthroline derivatives such as (BCP); triphenylborane derivatives such as tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) borane (3TPYMB); diphenylbis (4- (pyridine-3- Yl) phenyl) silane (DPPS) and other tetraphenylsilane derivatives; poly (oxadiazole) (Poly-OXZ), polystyrene derivatives (PSS), etc. In particular, the material of the electron injection layer 221 includes fluorination. lithium (LiF), a fluoride such as barium fluoride (BaF 2); lithium oxide Li 2 O) oxides such like.
電子注入層221の材料としては、陰極からの電子の注入および輸送をより効率よく行う観点から、電子輸送層220の材料よりも最低空分子軌道(LUMO)のエネルギー準位が高い材料を用いることが好ましい。また、電子輸送層220の材料としては、電子注入層221の材料よりも、電子の移動度が高い材料を用いることが好ましい。 As a material of the electron injection layer 221, a material having a higher energy level of the lowest unoccupied molecular orbital (LUMO) than that of the material of the electron transport layer 220 is used from the viewpoint of more efficiently injecting and transporting electrons from the cathode. Is preferred. As a material for the electron transport layer 220, a material having higher electron mobility than the material for the electron injection layer 221 is preferably used.
電子輸送層220および電子注入層221は、任意に添加剤(ドナー、アクセプター等)を含んでいてもよい。そして、電子の輸送性および注入性をより向上させるためには、電子輸送層220および電子注入層221は、ドナーを含むことが好ましい。ドナーとしては、有機EL素子用の公知のドナー材料を用いることができる。これらの具体的な化合物を以下に例示するが、本実施形態はこれらの材料に限定されるものではない。 The electron transport layer 220 and the electron injection layer 221 may optionally contain an additive (donor, acceptor, etc.). In order to further improve the electron transport property and the injection property, the electron transport layer 220 and the electron injection layer 221 preferably include a donor. As a donor, the well-known donor material for organic EL elements can be used. Although these specific compounds are illustrated below, this embodiment is not limited to these materials.
ドナーは、無機材料または有機材料のいずれであってもよい。
無機材料としては、リチウム、ナトリウム、カリウム等のアルカリ金属;マグネシウム、カルシウム等のアルカリ土類金属;希土類元素;アルミニウム(Al);銀(Ag);銅(Cu);インジウム(In)等が挙げられる。
The donor may be either an inorganic material or an organic material.
Examples of the inorganic material include alkali metals such as lithium, sodium and potassium; alkaline earth metals such as magnesium and calcium; rare earth elements; aluminum (Al); silver (Ag); copper (Cu); It is done.
有機材料としては、芳香族3級アミン骨格を有する化合物、フェナントレン、ピレン、ペリレン、アントラセン、テトラセン、ペンタセン等の置換基を有していてもよい縮合多環化合物、テトラチアフルバレン(TTF)類、ジベンゾフラン、フェノチアジン、カルバゾール等が挙げられる。 Examples of the organic material include a compound having an aromatic tertiary amine skeleton, a condensed polycyclic compound which may have a substituent such as phenanthrene, pyrene, perylene, anthracene, tetracene and pentacene, tetrathiafulvalene (TTF), Examples include dibenzofuran, phenothiazine, and carbazole.
芳香族3級アミン骨格を有する化合物としては、アニリン類;フェニレンジアミン類;N,N,N’,N’-テトラフェニルベンジジン、N,N’-ビス-(3-メチルフェニル)-N,N’-ビス-(フェニル)-ベンジジン、N,N’-ジ(ナフタレン-1-イル)-N,N’-ジフェニル-ベンジジン等のベンジジン類;トリフェニルアミン、4,4’4”-トリス(N,N-ジフェニル-アミノ)-トリフェニルアミン、4,4’4”-トリス(N-3-メチルフェニル-N-フェニル-アミノ)-トリフェニルアミン、4,4’4”-トリス(N-(1-ナフチル)-N-フェニル-アミノ)-トリフェニルアミン等のトリフェニルアミン類;N,N’-ジ-(4-メチル-フェニル)-N,N’-ジフェニル-1,4-フェニレンジアミン等のトリフェニルジアミン類等が挙げられる。 Compounds having an aromatic tertiary amine skeleton include anilines; phenylenediamines; N, N, N ′, N′-tetraphenylbenzidine, N, N′-bis- (3-methylphenyl) -N, N Benzidines such as' -bis- (phenyl) -benzidine, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine; triphenylamine, 4,4'4 "-tris ( N, N-diphenyl-amino) -triphenylamine, 4,4'4 "-tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine, 4,4'4" -tris (N Triphenylamines such as-(1-naphthyl) -N-phenyl-amino) -triphenylamine; N, N'-di- (4-methyl-phenyl) -N, N'-diphenyl-1,4- Phenyle Triphenyldiamine such as diamines, and the like.
上記の縮合多環化合物が「置換基を有する」とは、縮合多環化合物中の1つ以上の水素原子が、水素原子以外の基(置換基)で置換されていることを指し、置換基の数は特に限定されず、全ての水素原子が置換基で置換されていてもよい。そして、置換基の位置も特に限定されない。置換基としては、炭素数1~10のアルキル基、炭素数1~10のアルコキシ基、炭素数2~10のアルケニル基、炭素数2~10のアルケニルオキシ基、炭素数6~15のアリール基、炭素数6~15のアリールオキシ基、水酸基、ハロゲン原子等が挙げられる。 The above-mentioned condensed polycyclic compound “has a substituent” means that one or more hydrogen atoms in the condensed polycyclic compound are substituted with a group other than a hydrogen atom (substituent). The number of is not particularly limited, and all hydrogen atoms may be substituted with a substituent. The position of the substituent is not particularly limited. Examples of the substituent include an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkenyloxy group having 2 to 10 carbon atoms, and an aryl group having 6 to 15 carbon atoms. An aryloxy group having 6 to 15 carbon atoms, a hydroxyl group, a halogen atom, and the like.
アルキル基は、直鎖状、分岐鎖状または環状のいずれであってもよい。
直鎖状または分枝鎖状のアルキル基としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、sec-ブチル基、tert-ブチル基、n-ペンチル基、イソペンチル基、ネオペンチル基、tert-ペンチル基、1-メチルブチル基、n-ヘキシル基、2-メチルペンチル基、3-メチルペンチル基、2,2-ジメチルブチル基、2,3-ジメチルブチル基、n-ヘプチル基、2-メチルヘキシル基、3-メチルヘキシル基、2,2-ジメチルペンチル基、2,3-ジメチルペンチル基、2,4-ジメチルペンチル基、3,3-ジメチルペンチル基、3-エチルペンチル基、2,2,3-トリメチルブチル基、n-オクチル基、イソオクチル基、ノニル基、デシル基等が挙げられる。
The alkyl group may be linear, branched or cyclic.
Examples of the linear or branched alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, and n-pentyl group. , Isopentyl group, neopentyl group, tert-pentyl group, 1-methylbutyl group, n-hexyl group, 2-methylpentyl group, 3-methylpentyl group, 2,2-dimethylbutyl group, 2,3-dimethylbutyl group, n-heptyl group, 2-methylhexyl group, 3-methylhexyl group, 2,2-dimethylpentyl group, 2,3-dimethylpentyl group, 2,4-dimethylpentyl group, 3,3-dimethylpentyl group, 3 -Ethylpentyl group, 2,2,3-trimethylbutyl group, n-octyl group, isooctyl group, nonyl group, decyl group and the like.
環状のアルキル基は、単環状または多環状のいずれであってもよく、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基、シクロノニル基、シクロデシル基、ノルボルニル基、イソボルニル基、1-アダマンチル基、2-アダマンチル基、トリシクロデシル基等が挙げられる。 The cyclic alkyl group may be monocyclic or polycyclic, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, norbornyl group, isobornyl Group, 1-adamantyl group, 2-adamantyl group, tricyclodecyl group and the like.
アルコキシ基としては、アルキル基が酸素原子に結合した一価の基が挙げられる。アルケニル基としては、炭素数が2~10のアルキル基において、炭素原子間の1つの単結合(C-C)が二重結合(C=C)に置換されたものが挙げられる。アルケニルオキシ基としては、アルケニル基が酸素原子に結合した一価の基が挙げられる。 Examples of the alkoxy group include a monovalent group in which an alkyl group is bonded to an oxygen atom. Examples of the alkenyl group include an alkyl group having 2 to 10 carbon atoms in which one single bond (C—C) between carbon atoms is substituted with a double bond (C═C). Examples of the alkenyloxy group include a monovalent group in which the alkenyl group is bonded to an oxygen atom.
アリール基は、単環状または多環状のいずれであってもよく、環員数は特に限定されず、好ましいものとしては、フェニル基、1-ナフチル基、2-ナフチル基等が挙げられる。アリールオキシ基としては、アリール基が酸素原子に結合した一価の基が挙げられる。ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられる。 The aryl group may be monocyclic or polycyclic, and the number of ring members is not particularly limited, and preferred examples include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, and the like. Examples of the aryloxy group include a monovalent group in which an aryl group is bonded to an oxygen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
これらの中でも、ドナーとしては、電子濃度を増加させる効果がより高いことから、芳香族3級アミン骨格を有する化合物、置換基を有していてもよい縮合多環化合物、アルカリ金属が好ましい。 Among these, as the donor, a compound having an aromatic tertiary amine skeleton, a condensed polycyclic compound which may have a substituent, and an alkali metal are preferable because the effect of increasing the electron concentration is higher.
発光層218は、以下に例示する有機発光材料のみから構成されていてもよく、発光性のドーパントとホスト材料の組み合わせから構成されていてもよく、任意に正孔輸送材料、電子輸送材料、添加剤(ドナー、アクセプター等)等を含んでいてもよい。また、これらの各材料が高分子材料(結着用樹脂)または無機材料中に分散された構成であってもよい。発光効率および耐久性の観点からは、発光層218の材質は、ホスト材料中に発光性のドーパントが分散されたものが好ましい。 The light-emitting layer 218 may be composed only of the organic light-emitting material exemplified below, or may be composed of a combination of a light-emitting dopant and a host material, and optionally includes a hole transport material, an electron transport material, and an addition An agent (donor, acceptor, etc.) may be included. Moreover, the structure by which these each material was disperse | distributed in the polymeric material (binding resin) or the inorganic material may be sufficient. From the viewpoint of light emission efficiency and durability, the material of the light emitting layer 218 is preferably a material in which a light emitting dopant is dispersed in a host material.
有機発光材料としては、有機EL素子向けの公知の発光材料を用いることができる。このような発光材料は、低分子発光材料、高分子発光材料等に分類され、これらの具体的な化合物を以下に例示するが、本実施形態はこれらの材料に限定されるものではない。 As the organic light emitting material, a known light emitting material for an organic EL element can be used. Such light-emitting materials are classified into low-molecular light-emitting materials, polymer light-emitting materials, and the like. Specific examples of these compounds are given below, but the present embodiment is not limited to these materials.
発光層218に用いられる低分子発光材料(ホスト材料を含む)としては、4,4’-ビス(2,2’-ジフェニルビニル)-ビフェニル(DPVBi)等の芳香族ジメチリデン化合物;5-メチル-2-[2-[4-(5-メチル-2-ベンゾオキサゾリル)フェニル]ビニル]ベンゾオキサゾール等のオキサジアゾール化合物;3-(4-ビフェニル)-4-フェニル-5-t-ブチルフェニル-1,2,4-トリアゾール(TAZ)等のトリアゾール誘導体;1,4-ビス(2-メチルスチリル)ベンゼン等のスチリルベンゼン化合物;チオピラジンジオキシド誘導体、ベンゾキノン誘導体、ナフトキノン誘導体、アントラキノン誘導体、ジフェノキノン誘導体、フルオレノン誘導体等の蛍光性有機材料;アゾメチン亜鉛錯体、(8-ヒドロキシキノリナト)アルミニウム錯体(Alq)等の蛍光発光有機金属錯体;BeBq(ビス(ベンゾキノリノラト)ベリリウム錯体);4,4’-ビス-(2,2-ジ-p-トリル-ビニル)-ビフェニル(DTVBi);トリス(1,3-ジフェニル-1,3-プロパンジオノ)(モノフェナントロリン)Eu(III)(Eu(DBM)(Phen));ジフェニルエチレン誘導体;トリス[4-(9-フェニルフルオレン-9-イル)フェニル]アミン(TFTPA)等のトリフェニルアミン誘導体;ジアミノカルバゾール誘導体;ビススチリル誘導体;芳香族ジアミン誘導体;キナクリドン系化合物;ペリレン系化合物;クマリン系化合物;ジスチリルアリーレン誘導体(DPVBi);オリゴチオフェン誘導体(BMA-3T);4,4’-ジ(トリフェニルシリル)-ビフェニル(BSB)、ジフェニル-ジ(o-トリル)シラン(UGH1)、1,4-ビストリフェニルシリルベンゼン(UGH2)、1,3-ビス(トリフェニルシリル)ベンゼン(UGH3)、トリフェニル-(4-(9-フェニル-9H-フルオレン-9-イル)フェニル)シラン(TPSi-F)等のシラン誘導体;9,9-ジ(4-ジカルバゾール-ベンジル)フルオレン(CPF)、3,6-ビス(トリフェニルシリル)カルバゾール(mCP)、4,4’-ビス(カルバゾール-9-イル)ビフェニル(CBP)、4,4’-ビス(カルバゾール-9-イル)-2,2’-ジメチルビフェニル(CDBP)、N,N-ジカルバゾリル-3,5-ベンゼン(m-CP)、3-(ジフェニルホスホリル)-9-フェニル-9H-カルバゾール(PPO1)、3,6-ジ(9-カルバゾリル)-9-(2-エチルヘキシル)カルバゾール(TCz1)、9,9’-(5-(トリフェニルシリル)-1,3-フェニレン)ビス(9H-カルバゾール)(SimCP)、ビス(3,5-ジ(9H-カルバゾール-9-イル)フェニル)ジフェニルシラン(SimCP2)、3-(ジフェニルホスホリル)-9-(4-ジフェニルホスホリル)フェニル)-9H-カルバゾール(PPO21)、2,2-ビス(4-カルバゾリルフェニル)-1,1-ビフェニル(4CzPBP)、3,6-ビス(ジフェニルホスホリル)-9-フェニル-9H-カルバゾール(PPO2)、9-(4-tert-ブチルフェニル)-3,6-ビス(トリフェニルシリル)-9H-カルバゾール(CzSi)、3,6-ビス[(3,5-ジフェニル)フェニル]-9-フェニル-カルバゾール(CzTP)、9-(4-tert-ブチルフェニル)-3,6-ジトリチル-9H-カルバゾール(CzC)、9-(4-tert-ブチルフェニル)-3,6-ビス(9-(4-メトキシフェニル)-9H-フルオレン-9-イル)-9H-カルバゾール(DFC)、2,2’-ビス(4-カルバゾール-9-イル)フェニル)-ビフェニル(BCBP)、9,9’-((2,6-ジフェニルベンゾ[1,2-b:4,5-b’]ジフラン-3,7-ジイル)ビス(4,1-フェニレン))ビス(9H-カルバゾール)(CZBDF)等のカルバゾール誘導体;4-(ジフェニルフォスフォイル)-N,N-ジフェニルアニリン(HM-A1)等のアニリン誘導体;1,3-ビス(9-フェニル-9H-フルオレン-9-イル)ベンゼン(mDPFB)、1,4-ビス(9-フェニル-9H-フルオレン-9-イル)ベンゼン(pDPFB)、2,7-ビス(カルバゾール-9-イル)-9,9-ジメチルフルオレン(DMFL-CBP)、2-[9,9-ジ(4-メチルフェニル)-フルオレン-2-イル]-9,9-ジ(4-メチルフェニル)フルオレン(BDAF)、2-(9,9-スピロビフルオレン-2-イル)-9,9-スピロビフルオレン(BSBF)、9,9-ビス[4-(ピレニル)フェニル]-9H-フルオレン(BPPF)、2,2’-ジピレニル-9,9-スピロビフルオレン(Spiro-Pye)、2,7-ジピレニル-9,9-スピロビフルオレン(2,2’-Spiro-Pye)、2,7-ビス[9,9-ジ(4-メチルフェニル)-フルオレン-2-イル]-9,9-ジ(4-メチルフェニル)フルオレン(TDAF)、2,7-ビス(9,9-スピロビフルオレン-2-イル)-9,9-スピロビフルオレン(TSBF)、9,9-スピロビフルオレン-2-イル-ジフェニル-フォスフィンオキサイド(SPPO1)等のフルオレン誘導体;1,3-ジ(ピレン-1-イル)ベンゼン(m-Bpye)等のピレン誘導体;プロパン-2,2’-ジイルビス(4,1-フェニレン)ジベンゾエート(MMA1)等のベンゾエート誘導体;4,4’-ビス(ジフェニルフォスフィンオキサイド)ビフェニル(PO1)、2,8-ビス(ジフェニルフォスフォリル)ジベンゾ[b,d]チオフェン(PPT)等のフォスフィンオキサイド誘導体;4,4”-ジ(トリフェニルシリル)-p-ターフェニル(BST)等のターフェニル誘導体;2,4-ビス(フェノキシ)-6-(3-メチルジフェニルアミノ)-1,3,5-トリアジン(BPMT)等トリアジン誘導体等が挙げられる。 As a low molecular light emitting material (including a host material) used for the light emitting layer 218, an aromatic dimethylidene compound such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi); Oxadiazole compounds such as 2- [2- [4- (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazole; 3- (4-biphenyl) -4-phenyl-5-t-butyl Triazole derivatives such as phenyl-1,2,4-triazole (TAZ); styrylbenzene compounds such as 1,4-bis (2-methylstyryl) benzene; thiopyrazine dioxide derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, Fluorescent organic materials such as diphenoquinone derivatives and fluorenone derivatives; azomethine zinc complexes, (8- Rokishikinorinato) aluminum complex (Alq 3) fluorescence emitting organic metal complex such as, BeBq (bis (benzoquinolinolato) beryllium complex); 4,4'-bis - (2,2-di -p- tolyl - vinyl) - Biphenyl (DTVBi); Tris (1,3-diphenyl-1,3-propanediono) (monophenanthroline) Eu (III) (Eu (DBM) 3 (Phen)); Diphenylethylene derivative; Tris [4- (9- Triphenylamine derivatives such as phenylfluoren-9-yl) phenyl] amine (TFTPA); diaminocarbazole derivatives; bisstyryl derivatives; aromatic diamine derivatives; quinacridone compounds; perylene compounds; coumarin compounds; ); Oligothiophene derivatives (BMA- T); 4,4′-di (triphenylsilyl) -biphenyl (BSB), diphenyl-di (o-tolyl) silane (UGH1), 1,4-bistriphenylsilylbenzene (UGH2), 1,3-bis Silane derivatives such as (triphenylsilyl) benzene (UGH3), triphenyl- (4- (9-phenyl-9H-fluoren-9-yl) phenyl) silane (TPSi-F); 9,9-di (4- Dicarbazole-benzyl) fluorene (CPF), 3,6-bis (triphenylsilyl) carbazole (mCP), 4,4′-bis (carbazol-9-yl) biphenyl (CBP), 4,4′-bis ( Carbazol-9-yl) -2,2′-dimethylbiphenyl (CDBP), N, N-dicarbazolyl-3,5-benzene (m-CP), 3- (diphenyl) Phosphoryl) -9-phenyl-9H-carbazole (PPO1), 3,6-di (9-carbazolyl) -9- (2-ethylhexyl) carbazole (TCz1), 9,9 '-(5- (triphenylsilyl) -1,3-phenylene) bis (9H-carbazole) (SimCP), bis (3,5-di (9H-carbazol-9-yl) phenyl) diphenylsilane (SimCP2), 3- (diphenylphosphoryl) -9- (4-Diphenylphosphoryl) phenyl) -9H-carbazole (PPO21), 2,2-bis (4-carbazolylphenyl) -1,1-biphenyl (4CzPBP), 3,6-bis (diphenylphosphoryl) -9 -Phenyl-9H-carbazole (PPO2), 9- (4-tert-butylphenyl) -3,6-bis (trif Nylsilyl) -9H-carbazole (CzSi), 3,6-bis [(3,5-diphenyl) phenyl] -9-phenyl-carbazole (CzTP), 9- (4-tert-butylphenyl) -3,6- Ditrityl-9H-carbazole (CzC), 9- (4-tert-butylphenyl) -3,6-bis (9- (4-methoxyphenyl) -9H-fluoren-9-yl) -9H-carbazole (DFC) 2,2′-bis (4-carbazol-9-yl) phenyl) -biphenyl (BCBP), 9,9 ′-((2,6-diphenylbenzo [1,2-b: 4,5-b ′ Carbazole derivatives such as difuran-3,7-diyl) bis (4,1-phenylene)) bis (9H-carbazole) (CZBDF); 4- (diphenylphosphoyl) -N, N Aniline derivatives such as diphenylaniline (HM-A1); 1,3-bis (9-phenyl-9H-fluoren-9-yl) benzene (mDPFB), 1,4-bis (9-phenyl-9H-fluorene-9 -Yl) benzene (pDPFB), 2,7-bis (carbazol-9-yl) -9,9-dimethylfluorene (DMFL-CBP), 2- [9,9-di (4-methylphenyl) -fluorene- 2-yl] -9,9-di (4-methylphenyl) fluorene (BDAF), 2- (9,9-spirobifluoren-2-yl) -9,9-spirobifluorene (BSBF), 9-bis [4- (pyrenyl) phenyl] -9H-fluorene (BPPF), 2,2′-dipyrenyl-9,9-spirobifluorene (Spiro-Pye), 2,7-dipyreni -9,9-spirobifluorene (2,2'-Spiro-Pye), 2,7-bis [9,9-di (4-methylphenyl) -fluoren-2-yl] -9,9-di ( 4-methylphenyl) fluorene (TDAF), 2,7-bis (9,9-spirobifluoren-2-yl) -9,9-spirobifluorene (TSBF), 9,9-spirobifluorene-2- Fluorene derivatives such as yl-diphenyl-phosphine oxide (SPPO1); pyrene derivatives such as 1,3-di (pyren-1-yl) benzene (m-Bpye); propane-2,2′-diylbis (4,1 Benzoate derivatives such as -phenylene) dibenzoate (MMA1); 4,4′-bis (diphenylphosphine oxide) biphenyl (PO1), 2,8-bis (diphenylphosphine) Olyl) dibenzo [b, d] thiophene (PPT) and other phosphine oxide derivatives; terphenyl derivatives such as 4,4 ″ -di (triphenylsilyl) -p-terphenyl (BST); 2,4-bis ( And triazine derivatives such as phenoxy) -6- (3-methyldiphenylamino) -1,3,5-triazine (BPMT).
発光層218に用いられる高分子発光材料としては、ポリ(2-デシルオキシ-1,4-フェニレン)(DO-PPP)、ポリ[2,5-ビス-[2-(N,N,N-トリエチルアンモニウム)エトキシ]-1,4-フェニル-アルト-1,4-フェニルレン]ジブロマイド(PPP-NEt3+)、ポリ[2-(2’-エチルヘキシルオキシ)-5-メトキシ-1,4-フェニレンビニレン](MEH-PPV)、ポリ[5-メトキシ-(2-プロパノキシサルフォニド)-1,4-フェニレンビニレン](MPS-PPV)、ポリ[2,5-ビス-(ヘキシルオキシ)-1,4-フェニレン-(1-シアノビニレン)](CN-PPV)等のポリフェニレンビニレン誘導体;ポリ(9,9-ジオクチルフルオレン)(PDAF)等のポリスピロ誘導体;ポリ(N-ビニルカルバゾール)(PVK)等のカルバゾール誘導体等が挙げられる。 Polymer light-emitting materials used for the light-emitting layer 218 include poly (2-decyloxy-1,4-phenylene) (DO-PPP), poly [2,5-bis- [2- (N, N, N-triethyl). ammonium) ethoxy] -1,4-phenyl - Alto 1,4 phenyl alkylene] dibromide (PPP-NEt 3+), poly [2- (2'-ethylhexyl oxy) -5-methoxy-1,4-phenylene Vinylene] (MEH-PPV), poly [5-methoxy- (2-propanoxysulfonide) -1,4-phenylenevinylene] (MPS-PPV), poly [2,5-bis- (hexyloxy)- Polyphenylene vinylene derivatives such as 1,4-phenylene- (1-cyanovinylene)] (CN-PPV); poly (9,9-dioctylfluorene) (PDAF) Pyro derivatives; poly (N- vinylcarbazole) (PVK), etc. carbazole derivatives, and the like.
有機発光材料は、低分子発光材料が好ましく、低消費電力化の観点から、発光効率の高い燐光材料を用いることが好ましい。 The organic light emitting material is preferably a low molecular light emitting material, and a phosphorescent material having high light emission efficiency is preferably used from the viewpoint of reducing power consumption.
発光層218に用いられる発光性のドーパントとしては、有機EL素子用の公知のドーパントを用いることができる。このようドーパントとしては、紫外発光材料であれば、p-クォーターフェニル、3,5,3,5-テトラ-tert-ブチルセクシフェニル、3,5,3,5-テトラ-tert-ブチル-p-クィンクフェニル等の蛍光発光材料等が挙げられる。また、青色発光材料であれば、スチリル誘導体等の蛍光発光材料;ビス[(4,6-ジフルオロフェニル)-ピリジナト-N,C2’]ピコリネート イリジウム(III)(FIrpic)、ビス(4’,6’-ジフルオロフェニルポリジナト)テトラキス(1-ピラゾイル)ボレート イリジウム(III)(FIr6)等の燐光発光有機金属錯体等が挙げられる。また、緑色発光材料であれば、トリス(2-フェニルピリジナート)イリジウム(Ir(ppy))等の燐光発光有機金属錯体等が挙げられる。 As a luminescent dopant used for the light emitting layer 218, a well-known dopant for organic EL elements can be used. As the dopant, in the case of an ultraviolet light emitting material, p-quaterphenyl, 3,5,3,5-tetra-tert-butylsecphenyl, 3,5,3,5-tetra-tert-butyl-p- Examples thereof include fluorescent light emitting materials such as quinckphenyl. In the case of a blue light emitting material, a fluorescent light emitting material such as a styryl derivative; bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic), bis (4 ′, 6 And phosphorescent organic metal complexes such as' -difluorophenylpolydinato) tetrakis (1-pyrazoyl) borate iridium (III) (FIr6). Examples of the green light emitting material include phosphorescent organic metal complexes such as tris (2-phenylpyridinate) iridium (Ir (ppy) 3 ).
なお、有機EL層214を構成する各層の材料について説明したが、例えば、ホスト材料は正孔輸送材料または電子輸送材料としても使用でき、正孔輸送材料および電子輸送材料もホスト材料として使用できる。 In addition, although the material of each layer which comprises the organic EL layer 214 was demonstrated, for example, a host material can also be used as a hole transport material or an electron transport material, and a hole transport material and an electron transport material can also be used as a host material.
正孔注入層216、正孔輸送層217、発光層218、正孔防止層219、電子輸送層220および電子注入層221の各層の形成方法としては、公知のウエットプロセス、ドライプロセス、レーザー転写法等が用いられる。
ウエットプロセスとしては、上記の各層を構成する材料を溶媒に溶解または分散させた液体を用いる、スピンコーティング法、ディッピング法、ドクターブレード法、吐出コート法、スプレーコート法等の塗布法;インクジェット法、凸版印刷法、凹版印刷法、スクリーン印刷法、マイクログラビアコート法等の印刷法等が挙げられる。上記の塗布法や印刷法に用いられる液体は、レベリング剤、粘度調整剤等、液体の物性を調整するための添加剤を含んでいてもよい。
As a method for forming each of the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221, a known wet process, dry process, and laser transfer method are used. Etc. are used.
As the wet process, a coating method such as a spin coating method, a dipping method, a doctor blade method, a discharge coating method, a spray coating method, or the like using a liquid in which a material constituting each layer is dissolved or dispersed in a solvent; an inkjet method; Examples thereof include a printing method such as a relief printing method, an intaglio printing method, a screen printing method, and a micro gravure coating method. The liquid used in the above coating method and printing method may contain additives for adjusting the physical properties of the liquid, such as a leveling agent and a viscosity modifier.
ドライプロセスとしては、上記の各層を構成する材料を用いる、抵抗加熱蒸着法、電子線(EB)蒸着法、分子線エピタキシー(MBE)法、スパッタリング法、有機気相蒸着(OVPD)法等が用いられる。
  正孔注入層216、正孔輸送層217、発光層218、正孔防止層219、電子輸送層220および電子注入層221の各層の膜厚は、通常1~1000nm程度であるが、10~200nmが好ましい。膜厚が10nm未満であると、本来必要とされる物性(電荷の注入特性、輸送特性、閉じ込め特性)が得なれない。また、ゴミ等の異物による画素欠陥が生じるおそれがある。一方、膜厚が200nmを超えると、有機EL層214の抵抗成分によって駆動電圧が上昇し、結果として、消費電力が上昇する。
As the dry process, a resistance heating vapor deposition method, an electron beam (EB) vapor deposition method, a molecular beam epitaxy (MBE) method, a sputtering method, an organic vapor phase vapor deposition (OVPD) method, or the like, using the material constituting each of the above layers is used. It is done.
The thickness of each of the hole injection layer 216, the hole transport layer 217, the light emitting layer 218, the hole prevention layer 219, the electron transport layer 220, and the electron injection layer 221 is usually about 1 to 1000 nm, but 10 to 200 nm. Is preferred. If the film thickness is less than 10 nm, the properties (charge injection characteristics, transport characteristics, confinement characteristics) that are originally required cannot be obtained. In addition, pixel defects due to foreign matters such as dust may occur. On the other hand, when the film thickness exceeds 200 nm, the driving voltage increases due to the resistance component of the organic EL layer 214, resulting in an increase in power consumption.
エッジカバー222は、絶縁材料を用いてEB蒸着法、スパッタリング法、イオンプレーティング法、抵抗加熱蒸着法等の公知の方法により形成することができ、公知のドライ法またはウエット法のフォトリソグラフィー法によりパターニングすることができるが、本実施形態はこれらの形成方法に限定されるものではない。また、エッジカバー222を構成する絶縁材料としては、公知の材料が用いられるが、本実施形態では、絶縁材料が特に限定されるものではない。エッジカバー222は光を透過する必要があるので、エッジカバー222を構成する絶縁材料としては、例えば、SiO、SiON、SiN、SiOC、SiC、HfSiON、ZrO、HfO、LaO等が挙げられる。 The edge cover 222 can be formed by using an insulating material by a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, or the like by a known dry method or a wet photolithography method. Patterning can be performed, but the present embodiment is not limited to these forming methods. In addition, a known material is used as the insulating material constituting the edge cover 222, but the insulating material is not particularly limited in the present embodiment. Since the edge cover 222 needs to transmit light, examples of the insulating material constituting the edge cover 222 include SiO, SiON, SiN, SiOC, SiC, HfSiON, ZrO, HfO, and LaO.
エッジカバー222の膜厚は、100~2000nmが好ましい。膜厚が100nm未満であると、絶縁性が十分ではなく、第一電極213と第二電極215の間でリークが起こり、消費電力の上昇、非発光の原因となる。一方、膜厚が2000nmを超えると、成膜プロセスに時間が掛り、生産効率の低下、エッジカバー222による第二電極215の断線の原因となる。 The film thickness of the edge cover 222 is preferably 100 to 2000 nm. If the film thickness is less than 100 nm, the insulating property is not sufficient, and leakage occurs between the first electrode 213 and the second electrode 215, resulting in an increase in power consumption and non-light emission. On the other hand, if the film thickness exceeds 2000 nm, the film forming process takes time, which causes a decrease in production efficiency and causes the second electrode 215 to be disconnected by the edge cover 222.
ここで、有機EL素子212は、第一電極213と第二電極215との干渉効果によるマイクロキャビティ構造(光微小共振器構造)、または、誘電体多層膜によるマイクロキャビティ構造(光微小共振器構造)を有することが好ましい。第一電極213と第二電極215により微小共振器構造が構成されると、第一電極213と第二電極215との干渉効果により、有機EL層214の発光を正面方向(光取り出し方向)に集光することができる。その際、有機EL層214の発光に指向性を持たせることができるため、周囲に逃げる発光損失を低減することができ、その発光効率を高めることができる。これにより、有機EL層214で生じる発光エネルギーをより効率よく、蛍光体層へ伝搬することが可能となり、表示装置の正面輝度を高めることができる。 Here, the organic EL element 212 has a microcavity structure (optical microresonator structure) based on an interference effect between the first electrode 213 and the second electrode 215, or a microcavity structure (optical microresonator structure) based on a dielectric multilayer film. ). When the first resonator 213 and the second electrode 215 form a microresonator structure, the organic EL layer 214 emits light in the front direction (light extraction direction) due to the interference effect between the first electrode 213 and the second electrode 215. It can be condensed. At that time, since the light emission of the organic EL layer 214 can have directivity, the light emission loss escaping to the surroundings can be reduced, and the light emission efficiency can be increased. Thereby, it is possible to more efficiently propagate the light emission energy generated in the organic EL layer 214 to the phosphor layer, and the front luminance of the display device can be increased.
また、第一電極213と第二電極215との干渉効果により、有機EL層214の発光スペクトルを調整することも可能となり、所望の発光ピーク波長および半値幅に調整することができる。これにより、赤色蛍光体および緑色蛍光体をより効果的に励起することが可能なスペクトルに制御することが可能となり、青色画素の色純度を向上させることができる。 In addition, due to the interference effect between the first electrode 213 and the second electrode 215, the emission spectrum of the organic EL layer 214 can be adjusted, and the desired emission peak wavelength and half width can be adjusted. Thereby, it is possible to control the red phosphor and the green phosphor to a spectrum that can be excited more effectively, and the color purity of the blue pixel can be improved.
また、本実施形態の表示装置は、外部駆動回路(走査線電極回路、データ信号電極回路、電源回路)に電気的に接続される。
ここで、有機EL素子基板210を構成する基板211としては、ガラス基板上に絶縁材料をコートした基板、より好ましくは金属基板上またはプラスチック基板上に絶縁材料をコートした基板、さらに好ましくは金属基板上またはプラスチック基板上に絶縁材料をコートした基板が用いられる。
Further, the display device of this embodiment is electrically connected to an external drive circuit (scanning line electrode circuit, data signal electrode circuit, power supply circuit).
Here, as the substrate 211 constituting the organic EL element substrate 210, a substrate coated with an insulating material on a glass substrate, more preferably a metal substrate or a substrate coated with an insulating material on a plastic substrate, more preferably a metal substrate. A substrate obtained by coating an insulating material on an upper or plastic substrate is used.
また、本実施形態の表示装置は、有機EL素子基板210を直接外部回路に接続して駆動してもよいし、TFT等のスイッチング回路を画素内に配置し、TFT等が接続される配線に、有機EL素子基板210を駆動するための外部駆動回路(走査線電極回路(ソースドライバ)、データ信号電極回路(ゲートドライバ)、電源回路)が電気的に接続されていてもよい。 Further, the display device of this embodiment may be driven by directly connecting the organic EL element substrate 210 to an external circuit, or a switching circuit such as a TFT is disposed in a pixel, and wiring connected to the TFT or the like An external drive circuit (scanning line electrode circuit (source driver), data signal electrode circuit (gate driver), power supply circuit) for driving the organic EL element substrate 210 may be electrically connected.
本実施形態では、蛍光体基板と有機EL素子基板210との間にカラーフィルターを設けることが好ましい。カラーフィルターとしては、従来のカラーフィルターを用いることができる。このように、カラーフィルターを設けることによって、赤色画素、緑色画素、青色画素の色純度を高めることができ、表示装置の色再現範囲を拡大することができる。また、青色蛍光体層上に形成された青色カラーフィルター、緑色蛍光体層上に形成された緑色カラーフィルター、赤色蛍光体層上に形成された赤色カラーフィルターが、外光中に含まれる励起光成分を吸収するため、外光による蛍光体層の発光を低減または防止することが可能となり、コントラストの低下を低減または防止することができる。さらに、青色蛍光体層上に形成された青色カラーフィルター、緑色蛍光体層上に形成された緑色カラーフィルター、赤色蛍光体層上に形成された赤色カラーフィルターにより、蛍光体層に吸収されず、透過しようとする励起光が外部に漏れ出すのを防止できるため、蛍光体層からの発光と励起光による混色によって表示の色純度が低下するのを防止することができる。 In the present embodiment, it is preferable to provide a color filter between the phosphor substrate and the organic EL element substrate 210. A conventional color filter can be used as the color filter. Thus, by providing the color filter, the color purity of the red pixel, the green pixel, and the blue pixel can be increased, and the color reproduction range of the display device can be expanded. In addition, the blue color filter formed on the blue phosphor layer, the green color filter formed on the green phosphor layer, and the red color filter formed on the red phosphor layer include excitation light contained in external light. Since the component is absorbed, light emission of the phosphor layer due to external light can be reduced or prevented, and a reduction in contrast can be reduced or prevented. Furthermore, the blue color filter formed on the blue phosphor layer, the green color filter formed on the green phosphor layer, and the red color filter formed on the red phosphor layer are not absorbed by the phosphor layer, Since the excitation light to be transmitted can be prevented from leaking to the outside, it is possible to prevent the color purity of the display from being deteriorated due to a mixture of light emitted from the phosphor layer and excitation light.
本実施形態の表示装置によれば、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない、さらには、低消費電力化が可能な優れた表示装置を実現できる。 According to the display device of the present embodiment, the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced. A display device can be realized.
(2)第二実施形態
図20は、第二実施形態に係る表示装置を構成するLED素子基板を示す概略断面図である。本実施形態の表示装置は、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板からなる蛍光体基板と、蛍光体基板上に、平坦化膜等を介して貼り合わされたLED基板(光源)230とから概略構成されている。
(2) Second Embodiment FIG. 20 is a schematic sectional view showing an LED element substrate constituting a display device according to a second embodiment. The display device of this embodiment includes a phosphor substrate comprising a substrate on which a phosphor layer, a light distribution adjusting layer, a barrier, a light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. The LED substrate (light source) 230 is bonded to the phosphor substrate via a flattening film or the like.
LED基板230は、基板231と、基板211の一方の面211a上に順に積層された第一のバッファ層232、n型コンタクト層233、第二のn型クラッド層234、第一のn型クラッド層235、活性層236、第一のp型クラッド層237、第二のp型クラッド層238および第二のバッファ層239と、n型コンタクト層233上に形成された陰極240と、第二のバッファ層239上に形成された陽極241とから概略構成されている。なお、LEDとしては、他の公知のLED、例えば、紫外発光無機LED、青色発光無機LED等を用いることができるが、具体的な構成は上記のものに限定されるものではない。 The LED substrate 230 includes a substrate 231, a first buffer layer 232, an n-type contact layer 233, a second n-type cladding layer 234, and a first n-type cladding that are sequentially stacked on one surface 211 a of the substrate 211. A layer 235, an active layer 236, a first p-type cladding layer 237, a second p-type cladding layer 238, a second buffer layer 239, a cathode 240 formed on the n-type contact layer 233, and a second An anode 241 formed on the buffer layer 239 is schematically configured. In addition, as LED, other well-known LED, for example, ultraviolet light emission inorganic LED, blue light emission inorganic LED, etc. can be used, However, A specific structure is not limited to said thing.
以下、LED基板230の各構成要素について詳細に説明する。
活性層236は、電子と正孔の再結合により発光を行う層であり、活性層材料としては、LED用の公知の活性層材料を用いることができる。このような活性層材料としては、例えば、紫外活性層材料として、AlGaN、InAlN、InAlGa1-a-bN(0≦a、0≦b、a+b≦1)、青色活性層材料としては、InGa1-zN(0<z<1)等が挙げられるが、本実施形態はこれらに限定されるものではない。また、活性層236としては、単一量子井戸構造または多重量子井戸構造のものが用いられる。量子井戸構造の活性層はn型、p型のいずれでもよいが、特にノンドープ(不純物無添加)の活性層とすると、バンド間発光により発光波長の半値幅が狭くなり、色純度のよい発光が得られるため好ましい。
Hereinafter, each component of the LED substrate 230 will be described in detail.
The active layer 236 is a layer that emits light by recombination of electrons and holes, and a known active layer material for LED can be used as the active layer material. As such an active layer material, for example, as an ultraviolet active layer material, AlGaN, InAlN, In a Al b Ga 1-ab N (0 ≦ a, 0 ≦ b, a + b ≦ 1), blue active layer material Examples thereof include In z Ga 1-z N (0 <z <1), but the present embodiment is not limited to these. The active layer 236 has a single quantum well structure or a multiple quantum well structure. The active layer of the quantum well structure may be either n-type or p-type. However, when it is a non-doped (no impurity added) active layer, the half-value width of the emission wavelength is narrowed due to interband emission, and light emission with good color purity is achieved. Since it is obtained, it is preferable.
また、活性層236にドナー不純物またはアクセプター不純物の少なくとも一方をドープしてもよい。不純物をドープした活性層の結晶性がノンドープのものと同じであれば、ドナー不純物をドープすることにより、ノンドープのものに比べてバンド間発光強度をさらに強くすることができる。アクセプター不純物をドープすると、バンド間発光のピーク波長よりも約0.5eVだけ低エネルギー側にピーク波長をシフトさせることができるが、半値幅は広くなる。アクセプター不純物とドナー不純物との両者をドープすると、アクセプター不純物のみをドープした活性層の発光強度に比べて、その発光強度をさらに大きくすることができる。特に、アクセプター不純物をドープした活性層を形成する場合、活性層の導電型はSi等のドナー不純物をもドープしてn型とすることが好ましい。 Further, the active layer 236 may be doped with at least one of a donor impurity and an acceptor impurity. If the crystallinity of the active layer doped with the impurity is the same as that of the non-doped layer, the emission intensity between bands can be further increased by doping the donor impurity as compared with the non-doped layer. When the acceptor impurity is doped, the peak wavelength can be shifted to the lower energy side by about 0.5 eV from the peak wavelength of interband light emission, but the full width at half maximum is widened. When both the acceptor impurity and the donor impurity are doped, the light emission intensity can be further increased as compared with the light emission intensity of the active layer doped only with the acceptor impurity. In particular, when an active layer doped with an acceptor impurity is formed, the conductivity type of the active layer is preferably doped with a donor impurity such as Si to be n-type.
第二のn型クラッド層234および第一のn型クラッド層235としては、LED用の公知のn型クラッド層材料を用いることができ、単層でも多層構成でもよい。活性層236よりもバンドギャップエネルギーが大きいn型半導体で、第二のn型クラッド層234および第一のn型クラッド層235を構成した場合、第二のn型クラッド層234および第一のn型クラッド層235と、活性層236との間には、正孔に対する電位障壁ができ、正孔を活性層236に閉じ込めることが可能となる。例えば、n型InGa1-xN(0≦x<1)により、第二のn型クラッド層234および第一のn型クラッド層235を形成することが可能であるが、本実施形態はこれらに限定されるものではない。 As the second n-type cladding layer 234 and the first n-type cladding layer 235, a known n-type cladding layer material for LED can be used, and a single layer or a multilayer structure may be used. When the second n-type cladding layer 234 and the first n-type cladding layer 235 are formed of an n-type semiconductor having a band gap energy larger than that of the active layer 236, the second n-type cladding layer 234 and the first n-type cladding layer 234 are formed. A potential barrier against holes is formed between the mold cladding layer 235 and the active layer 236, and holes can be confined in the active layer 236. For example, the second n-type cladding layer 234 and the first n-type cladding layer 235 can be formed from n-type In x Ga 1-x N (0 ≦ x <1). Is not limited to these.
第一のp型クラッド層237および第二のp型クラッド層238としては、LED用の公知のp型クラッド層材料を用いることができ、単層でも多層構成でもよい。活性層236よりもバンドギャップエネルギーが大きいp型半導体で、第一のp型クラッド層237および第二のp型クラッド層238を構成した場合、第一のp型クラッド層237および第二のp型クラッド層238と、活性層236との間には、電子に対する電位障壁ができ、電子を活性層236に閉じ込めることが可能となる。例えば、AlGa1-yN(0≦y≦1)により、第一のp型クラッド層237および第二のp型クラッド層238を形成することが可能であるが、本実施形態はこれらに限定されるものではない。 As the first p-type cladding layer 237 and the second p-type cladding layer 238, a known p-type cladding layer material for LED can be used, and a single layer or a multilayer structure may be used. When the first p-type cladding layer 237 and the second p-type cladding layer 238 are formed of a p-type semiconductor having a band gap energy larger than that of the active layer 236, the first p-type cladding layer 237 and the second p-type cladding layer 238 are used. A potential barrier against electrons is formed between the mold cladding layer 238 and the active layer 236, and the electrons can be confined in the active layer 236. For example, the first p-type cladding layer 237 and the second p-type cladding layer 238 can be formed from Al y Ga 1-y N (0 ≦ y ≦ 1). It is not limited to.
n型コンタクト層233としては、LED用の公知のコンタクト層材料を用いることができ、例えば、第二のn型クラッド層234および第一のn型クラッド層235に接して電極を形成する層としてn型GaNからなるn型コンタクト層233を形成することが可能である。また、第一のp型クラッド層237および第二のp型クラッド層238に接して電極を形成する層として、p型GaNからなるp型コンタクト層を形成することも可能である。ただし、このp型コンタクト層は、第二のn型クラッド層234、第二のp型クラッド層238がGaNで形成されていれば、特に形成する必要はなく、第二のクラッド層(第二のn型クラッド層234、第二のp型クラッド層238)をコンタクト層とすることも可能である。 As the n-type contact layer 233, a known contact layer material for LED can be used. For example, as a layer for forming an electrode in contact with the second n-type clad layer 234 and the first n-type clad layer 235 An n-type contact layer 233 made of n-type GaN can be formed. It is also possible to form a p-type contact layer made of p-type GaN as a layer for forming an electrode in contact with the first p-type cladding layer 237 and the second p-type cladding layer 238. However, this p-type contact layer is not particularly required to be formed if the second n-type cladding layer 234 and the second p-type cladding layer 238 are formed of GaN. The n-type cladding layer 234 and the second p-type cladding layer 238) may be used as contact layers.
本実施形態で用いられる上記の各層の形成方法としては、LED用の公知の成膜プロセスを用いることが可能であるが、本実施形態は特にこれらに限定されるものではない。例えば、MOVPE(有機金属気相成長法)、MBE(分子線気相成長法)、HDVPE(ハイドライド気相成長法)等の気相成長法を用いて、例えば、サファイア(C面、A面、R面を含む)、SiC(6H-SiC、4H-SiCも含む)、スピネル(MgAl、特にその(111)面)、ZnO、Si、GaAs、あるいは、他の酸化物単結晶基板(NGO等)等の基板上に形成することが可能である。 As a method for forming each of the layers used in the present embodiment, a known film forming process for LEDs can be used, but the present embodiment is not particularly limited thereto. For example, by using a vapor phase growth method such as MOVPE (metal organic vapor phase epitaxy), MBE (molecular beam vapor phase epitaxy), HDVPE (hydride vapor phase epitaxy), for example, sapphire (C plane, A plane, R plane), SiC (including 6H—SiC, 4H—SiC), spinel (MgAl 2 O 4 , especially its (111) plane), ZnO, Si, GaAs, or other oxide single crystal substrates ( It is possible to form on a substrate such as NGO.
本実施形態の表示装置によれば、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない、さらには、低消費電力化が可能な優れた表示装置を実現できる。 According to the display device of the present embodiment, the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced. A display device can be realized.
(3)第三実施形態
図21は、第三実施形態に係る表示装置を構成する無機EL素子基板を示す概略断面図である。本実施形態の表示装置は、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板からなる蛍光体基板と、蛍光体基板上に、平坦化膜等を介して貼り合わされた無機EL素子基板(光源)250とから概略構成されている。
(3) Third Embodiment FIG. 21 is a schematic sectional view showing an inorganic EL element substrate constituting a display device according to a third embodiment. The display device of this embodiment includes a phosphor substrate comprising a substrate on which a phosphor layer, a light distribution adjustment layer, a barrier, a light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. And an inorganic EL element substrate (light source) 250 bonded on a phosphor substrate via a planarizing film or the like.
無機EL素子基板250は、基板251と、基板251の一方の面251a上に設けられた無機EL素子252とから概略構成されている。
無機EL素子252は、基板251の一方の面251aに順に積層された、第一電極253、第一誘電体層254、発光層255、第二誘電体層256および第二電極257から構成されている。第一電極253および第二電極257は、無機EL素子252の陽極または陰極として対で機能する。なお、無機EL素子252としては、公知の無機EL素子、例えば、紫外発光無機EL素子、青色発光無機EL素子等を用いることができるが、具体的な構成は前記のものに限定されるものではない。
The inorganic EL element substrate 250 is generally composed of a substrate 251 and an inorganic EL element 252 provided on one surface 251a of the substrate 251.
The inorganic EL element 252 includes a first electrode 253, a first dielectric layer 254, a light emitting layer 255, a second dielectric layer 256, and a second electrode 257, which are sequentially stacked on one surface 251a of the substrate 251. Yes. The first electrode 253 and the second electrode 257 function as a pair as an anode or a cathode of the inorganic EL element 252. As the inorganic EL element 252, a known inorganic EL element such as an ultraviolet light emitting inorganic EL element or a blue light emitting inorganic EL element can be used, but the specific configuration is not limited to the above. Absent.
以下、無機EL素子基板250を構成する各構成部材およびその形成方法について具体的に説明するが、本実施形態はこれら構成部材および形成方法に限定されるものではない。 Hereinafter, although each structural member which comprises the inorganic EL element substrate 250, and its formation method are demonstrated concretely, this embodiment is not limited to these structural members and a formation method.
基板251としては、上述の有機EL素子基板210を構成する基板211と同様のものが用いられる。 As the substrate 251, the same substrate as the substrate 211 constituting the organic EL element substrate 210 described above is used.
第一電極253および第二電極257は、無機EL素子252の陽極または陰極として対で機能する。つまり、第一電極253を陽極とした場合、第二電極257は陰極となり、第一電極253を陰極とした場合、第二電極257は陽極となる。 The first electrode 253 and the second electrode 257 function as a pair as an anode or a cathode of the inorganic EL element 252. That is, when the first electrode 253 is an anode, the second electrode 257 is a cathode, and when the first electrode 253 is a cathode, the second electrode 257 is an anode.
第一電極253および第二電極257としては、アルミニウム(Al)、金(Au)、白金(Pt)、ニッケル(Ni)等の金属、および、インジウム(In)と錫(Sn)からなる酸化物(ITO)、錫(Sn)の酸化物(SnO)、インジウム(In)と亜鉛(Zn)からなる酸化物(IZO)等が透明電極材料として挙げられるが、本実施形態はこれらの材料に限定されるものではない。光を取り出す側の電極には、ITO等の透明電極がよく、光を取り出す方向と反対側の電極には、アルミニウム等からなる反射電極を用いることが好ましい。 As the first electrode 253 and the second electrode 257, a metal such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), and an oxide made of indium (In) and tin (Sn) (ITO), tin (Sn) oxide (SnO 2 ), oxide (IZO) made of indium (In) and zinc (Zn), and the like can be cited as transparent electrode materials. It is not limited. A transparent electrode such as ITO is good for the electrode on the light extraction side, and a reflective electrode made of aluminum or the like is preferably used for the electrode on the opposite side to the light extraction direction.
第一電極253および第二電極257は、上記の材料を用いて、EB蒸着法、スパッタリング法、イオンプレーティング法、抵抗加熱蒸着法等の公知の方法により形成することができるが、本実施形態はこれらの形成方法に限定されるものではない。また、必要に応じて、フォトリソグラフフィー法、レーザー剥離法により形成した電極をパターニングすることもでき、シャドーマスクと組み合わせることでパターニングした電極を形成することもできる。第一電極253および第二電極257の膜厚は、50nm以上であることが好ましい。膜厚が50nm未満の場合には、配線抵抗が高くなり、駆動電圧が上昇するおそれがある。 The first electrode 253 and the second electrode 257 can be formed by using a known method such as an EB vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials. Is not limited to these forming methods. Moreover, the electrode formed by the photolithographic method and the laser peeling method can also be patterned as needed, and the patterned electrode can also be formed by combining with a shadow mask. The film thicknesses of the first electrode 253 and the second electrode 257 are preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance increases and the drive voltage may increase.
第一誘電体層254および第二誘電体層256としては、無機EL素子用の公知の誘電体材料を用いることができる。このような誘電体材料としては、例えば、五酸化タンタル(Ta)、酸化珪素(SiO)、窒化珪素(Si)、酸化アルミニウム(Al)、チタン酸アルミニウム(AlTiO)、チタン酸バリウム(BaTiO)およびチタン酸ストロンチウム(SrTiO)等が挙げられるが、本実施形態はこれらの誘電体材料に限定されるものではない。また、第一誘電体層254および第二誘電体層256は、上記の誘電体材料から選択された1種類からなる単層構造であってもよく、2種類以上を積層した多層構造であってもよい。
また、第一誘電体層254および第二誘電体層256の膜厚は、200~500nm程度が好ましい。
As the first dielectric layer 254 and the second dielectric layer 256, a known dielectric material for inorganic EL elements can be used. Examples of such a dielectric material include tantalum pentoxide (Ta 2 O 5 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum titanate ( Examples include AlTiO 3 ), barium titanate (BaTiO 3 ), and strontium titanate (SrTiO 3 ). However, the present embodiment is not limited to these dielectric materials. Further, the first dielectric layer 254 and the second dielectric layer 256 may have a single layer structure made of one type selected from the above dielectric materials, or may have a multilayer structure in which two or more types are stacked. Also good.
The film thicknesses of the first dielectric layer 254 and the second dielectric layer 256 are preferably about 200 to 500 nm.
発光層255としては、無機EL素子用の公知の発光材料を用いることができる。このような発光材料としては、例えば、紫外発光材料として、ZnF:Gd、青色発光材料として、BaAl:Eu、CaAl:Eu、ZnAl:Eu、BaSiS:Ce、ZnS:Tm、SrS:Ce、SrS:Cu、CaS:Pb、(Ba,Mg)Al:Eu等が挙げられるが、本実施形態はこれらの発光材料に限定されるものではない。
また、発光層255の膜厚は、300~1000nm程度が好ましい。
As the light-emitting layer 255, a known light-emitting material for inorganic EL elements can be used. As such a light emitting material, for example, ZnF 2 : Gd as an ultraviolet light emitting material, BaAl 2 S 4 : Eu, CaAl 2 S 4 : Eu, ZnAl 2 S 4 : Eu, Ba 2 SiS 4 as a blue light emitting material. : Ce, ZnS: Tm, SrS: Ce, SrS: Cu, CaS: Pb, (Ba, Mg) Al 2 S 4 : Eu, and the like, but this embodiment is not limited to these light emitting materials. Absent.
Further, the thickness of the light emitting layer 255 is preferably about 300 to 1000 nm.
本実施形態の表示装置によれば、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない、さらには、低消費電力化が可能な優れた表示装置を実現できる。 According to the display device of the present embodiment, the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced. A display device can be realized.
なお、光源の構成として、上述の第一実施形態では有機EL素子基板、第二実施形態ではLED基板、第三実施形態では無機EL素子基板を例示した。これらの構成例において、有機EL素子、LED、無機EL素子等の発光素子を封止する封止膜または封止基板を設けることが好ましい。 As the configuration of the light source, the organic EL element substrate is exemplified in the first embodiment, the LED substrate is exemplified in the second embodiment, and the inorganic EL element substrate is exemplified in the third embodiment. In these structural examples, it is preferable to provide a sealing film or a sealing substrate for sealing a light emitting element such as an organic EL element, an LED, or an inorganic EL element.
封止膜および封止基板は、公知の封止材料および封止方法により形成することができる。具体的には、光源を構成する基板と反対側の表面上にスピンコート法、ODF、ラミレート法等を用いて樹脂を塗布することによって封止膜を形成することもできる。あるいは、プラズマCVD法、イオンプレーティング法、イオンビーム法、スパッタ法等により、SiO、SiON、SiN等の無機膜を形成した後、さらに、スピンコート法、ODF、ラミレート法等を用いて樹脂を塗布することによって封止膜を形成するか、または、封止基板を貼り合わせることもできる。 The sealing film and the sealing substrate can be formed by a known sealing material and sealing method. Specifically, the sealing film can be formed by applying a resin on the surface opposite to the substrate constituting the light source by using a spin coat method, an ODF, a laminate method, or the like. Alternatively, after forming an inorganic film such as SiO, SiON, SiN, etc. by plasma CVD, ion plating, ion beam, sputtering, etc., resin is further added using spin coating, ODF, lamination, etc. A sealing film can be formed by coating, or a sealing substrate can be attached.
このような封止膜や封止基板により、外部からの発光素子内への酸素や水分の混入を防止することができ、光源の寿命が向上する。また、光源と蛍光体基板とを接合するときは、一般の紫外線硬化樹脂、熱硬化樹脂等で接着させることもできる。また、蛍光体基板上に光源を直接形成した場合には、例えば、窒素ガス、アルゴンガス等の不活性ガスをガラス板、金属板等で封止する方法が挙げられる。さらに、封入した不活性ガス中に酸化バリウム等の吸湿剤等を混入すると、水分による有機EL素子の劣化をより効果的に低減できるため好ましい。ただし、本実施形態は、これらの部材や形成方法に限定されるものではない。また、基板と反対側から光を取り出す場合、封止膜、封止基板ともに光透過性の材料を使用する必要がある。 Such a sealing film or a sealing substrate can prevent entry of oxygen and moisture from the outside into the light-emitting element, thereby improving the life of the light source. Moreover, when joining a light source and a fluorescent substance board | substrate, it can also be made to adhere | attach with general ultraviolet curable resin, thermosetting resin, etc. In addition, when the light source is directly formed on the phosphor substrate, for example, a method of sealing an inert gas such as nitrogen gas or argon gas with a glass plate, a metal plate, or the like can be given. Furthermore, it is preferable to mix a hygroscopic agent such as barium oxide in the enclosed inert gas because deterioration of the organic EL element due to moisture can be more effectively reduced. However, this embodiment is not limited to these members and forming methods. In addition, when light is extracted from the side opposite to the substrate, it is necessary to use a light-transmitting material for both the sealing film and the sealing substrate.
(4)第四実施形態
図22は、第四実施形態に係る表示装置を示す概略断面図である。図22において、図3示した発光デバイス30および図19に示した有機EL素子基板210と同一の構成要素には同一符号を付して、その説明を省略する。
本実施形態の表示装置260は、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板と同様の構成の蛍光体基板261と、蛍光体基板261上に、平坦化膜を介して貼り合わされたアクティブマトリクス駆動型の有機EL素子基板(光源)262とから概略構成されている。
(4) Fourth Embodiment FIG. 22 is a schematic sectional view showing a display device according to a fourth embodiment. 22, the same components as those of the light emitting device 30 illustrated in FIG. 3 and the organic EL element substrate 210 illustrated in FIG. 19 are denoted by the same reference numerals, and description thereof is omitted.
The display device 260 of the present embodiment has the same configuration as the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. It is schematically composed of a phosphor substrate 261 and an active matrix driving type organic EL element substrate (light source) 262 bonded on the phosphor substrate 261 via a planarizing film.
有機EL素子基板262では、赤色画素PR、緑色画素PG、青色画素PBの各々に光を照射するか否かを切り換える手段として、TFTを用いたアクティブマトリクス駆動方式が用いられている。有機EL素子基板262が青色光を発光する場合には、青色画素PBは青色光を散乱させる光散乱層263を有するものとする。 In the organic EL element substrate 262, an active matrix driving method using TFTs is used as means for switching whether to irradiate each of the red pixel PR, the green pixel PG, and the blue pixel PB. When the organic EL element substrate 262 emits blue light, the blue pixel PB has a light scattering layer 263 that scatters blue light.
「アクティブマトリクス駆動型有機EL素子基板」
以下、アクティブマトリクス駆動型の有機EL素子基板262について詳細に説明する。図23は、有機EL素子基板を備えた表示装置を示す概略構成図である。有機EL素子基板262は、基板211の一方の面211aにTFT264が形成されている。すなわち、基板211の一方の面211aに、ゲート電極265およびゲート線266が形成され、これらゲート電極265およびゲート線266を覆うように、基板211の一方の面211a上にゲート絶縁膜267が形成されている。ゲート絶縁膜267上には活性層(図示略)が形成され、活性層上にソース電極268、ドレイン電極269およびデータ線270が形成され、これらソース電極268、ドレイン電極269およびデータ線270を覆うように、平坦化膜271が形成されている。
"Active matrix drive type organic EL element substrate"
Hereinafter, the active matrix driving type organic EL element substrate 262 will be described in detail. FIG. 23 is a schematic configuration diagram illustrating a display device including an organic EL element substrate. The organic EL element substrate 262 has a TFT 264 formed on one surface 211 a of the substrate 211. That is, the gate electrode 265 and the gate line 266 are formed on one surface 211a of the substrate 211, and the gate insulating film 267 is formed on the one surface 211a of the substrate 211 so as to cover the gate electrode 265 and the gate line 266. Has been. An active layer (not shown) is formed on the gate insulating film 267. A source electrode 268, a drain electrode 269, and a data line 270 are formed on the active layer, and covers the source electrode 268, the drain electrode 269, and the data line 270. As described above, the planarizing film 271 is formed.
なお、平坦化膜271は単層構造でなくてもよく、他の層間絶縁膜と平坦化膜を組み合わせた構成としてもよい。また、平坦化膜271もしくは層間絶縁膜を貫通してドレイン電極269に達するコンタクトホール272が形成され、平坦化膜271上にコンタクトホール272を介してドレイン電極269と電気的に接続された有機EL素子212の第一電極213が形成されている。有機EL素子212の構成は、上述の第一実施形態と同様である。 Note that the planarization film 271 does not have to have a single layer structure, and may have a structure in which another interlayer insulating film and a planarization film are combined. Further, a contact hole 272 that penetrates the planarization film 271 or the interlayer insulating film and reaches the drain electrode 269 is formed, and the organic EL that is electrically connected to the drain electrode 269 via the contact hole 272 on the planarization film 271. A first electrode 213 of the element 212 is formed. The configuration of the organic EL element 212 is the same as that in the first embodiment.
TFT264は、有機EL素子212を形成する前に、予め基板211の一方の面211aに形成され、画素スイッチング用素子および有機EL素子駆動用素子として機能する。TFT264としては、公知のTFTが挙げられ、公知の材料、構造および形成方法を用いて形成することができる。また、本実施形態では、TFT264の代わりに、金属-絶縁体-金属(MIM)ダイオードを用いることもできる。 The TFT 264 is formed in advance on one surface 211a of the substrate 211 before forming the organic EL element 212, and functions as a pixel switching element and an organic EL element driving element. The TFT 264 includes a known TFT, and can be formed using a known material, structure, and formation method. In this embodiment, a metal-insulator-metal (MIM) diode can be used instead of the TFT 264.
TFT264を構成する活性層の材料としては、上述の第一実施形態と同様のものが用いられる。TFT264を構成する活性層の形成方法としては、上述の第一実施形態と同様の方法が用いられる。 As the material of the active layer constituting the TFT 264, the same material as in the first embodiment described above is used. As a method for forming the active layer constituting the TFT 264, the same method as in the first embodiment described above is used.
TFT264を構成するゲート絶縁膜267は、公知の材料を用いて形成することができる。ゲート絶縁膜267としては、例えば、PECVD法、LPCVD法等により形成されたSiOまたはポリシリコン膜を熱酸化して得られるSiO等が挙げられる。また、TFT264を構成するデータ線270、ゲート線266、ソース電極268およびドレイン電極269は、公知の導電性材料を用いて形成することができる。これらデータ線270、ゲート線266、ソース電極268およびドレイン電極269の材料としては、例えば、タンタル(Ta)、アルミニウム(Al)、銅(Cu)等が挙げられる。TFT264は、上記のような構成とすることができるが、本実施形態は、これらの材料、構造および形成方法に限定されるものではない。 The gate insulating film 267 included in the TFT 264 can be formed using a known material. As the gate insulating film 267, for example, PECVD method, SiO 2 or the like to the SiO 2 or polysilicon film formed by the LPCVD method or the like obtained by thermal oxidation. The data line 270, the gate line 266, the source electrode 268, and the drain electrode 269 included in the TFT 264 can be formed using a known conductive material. Examples of the material of the data line 270, the gate line 266, the source electrode 268, and the drain electrode 269 include tantalum (Ta), aluminum (Al), copper (Cu), and the like. The TFT 264 can be configured as described above, but the present embodiment is not limited to these materials, structures, and formation methods.
本実施形態に用いられる層間絶縁膜は、上述の第一実施形態と同様のものが挙げられる。また、層間絶縁膜の形成方法としては、上述の第一実施形態と同様の方法が挙げられる。 Examples of the interlayer insulating film used in the present embodiment are the same as those in the first embodiment described above. In addition, as a method for forming the interlayer insulating film, the same method as in the first embodiment described above can be used.
有機EL素子212からの発光を基板211とは反対側(第二電極215側)から取り出す場合には、外光が基板211の一方の面211aに形成されたTFT264に入射して、TFT264の電気的特性に変化が生じることを防ぐ目的で、遮光性を兼ね備えた遮光性絶縁膜を用いることが好ましい。また、上記の層間絶縁膜と遮光性絶縁膜を組み合わせて用いることもできる。遮光性絶縁膜の材料としては、上述の第一実施形態と同様のものが挙げられる。 When light emitted from the organic EL element 212 is extracted from the side opposite to the substrate 211 (second electrode 215 side), external light is incident on the TFT 264 formed on one surface 211a of the substrate 211, and the TFT 264 is electrically connected. It is preferable to use a light-shielding insulating film having a light-shielding property for the purpose of preventing changes in the mechanical characteristics. In addition, the interlayer insulating film and the light-shielding insulating film can be used in combination. Examples of the material for the light-shielding insulating film include the same materials as those in the first embodiment described above.
表示装置260において、基板211の一方の面211a上に形成したTFT264や各種配線、電極等により、その表面に凸凹が形成され、この凸凹によって有機EL素子212の欠陥(例えば、第一電極213や第二電極215の欠損や断線、有機EL層214の欠損、第一電極213と第二電極215との短絡、耐圧の低下等)が発生するおそれがある。これらの欠陥を防止するために、層間絶縁膜上に平坦化膜271を設けることが望ましい。 In the display device 260, the TFT 264 formed on one surface 211a of the substrate 211, various wirings, electrodes, and the like form irregularities on the surface, and the irregularities cause defects in the organic EL element 212 (for example, the first electrode 213, There is a possibility that the second electrode 215 may be broken or disconnected, the organic EL layer 214 may be broken, the first electrode 213 and the second electrode 215 may be short-circuited, or the breakdown voltage may be reduced. In order to prevent these defects, it is desirable to provide a planarizing film 271 on the interlayer insulating film.
平坦化膜271は、公知の材料を用いて形成することができる。平坦化膜271の材料としては、上述の第一実施形態と同様のものが挙げられる。
また、平坦化膜271は、単層構造または多層構造のいずれであってもよい。
The planarization film 271 can be formed using a known material. Examples of the material for the planarizing film 271 include the same materials as those in the first embodiment described above.
Further, the planarization film 271 may have either a single layer structure or a multilayer structure.
また、有機EL素子212の表面(蛍光体基板261と対向する面)には、有機EL素子212を封止する封止膜273が設けられている。 Further, a sealing film 273 for sealing the organic EL element 212 is provided on the surface of the organic EL element 212 (surface facing the phosphor substrate 261).
また、表示装置260は、図20に示すように、有機EL素子基板262上に形成された画素部273、ゲート信号側駆動回路274、データ信号側駆動回路275、信号配線276および電流供給線277と、有機EL素子基板262に接続されたフレキシブルプリント配線板(以下、「FPC」略すこともある。)278および外部駆動回路290とを備えている。 Further, as shown in FIG. 20, the display device 260 includes a pixel portion 273, a gate signal side drive circuit 274, a data signal side drive circuit 275, a signal wiring 276, and a current supply line 277 formed on the organic EL element substrate 262. And a flexible printed wiring board (hereinafter sometimes abbreviated as “FPC”) 278 connected to the organic EL element substrate 262 and an external drive circuit 290.
有機EL素子基板262は、有機EL素子212を駆動するために走査線電極回路、データ信号電極回路、電源回路等を含む外部駆動回路290に、FPC279を介して電気的に接続されている。本実施形態では、TFT264等のスイッチング回路が画素部274内に配置され、TFT264等が接続されるデータ線270、ゲート線266等の配線に有機EL素子212を駆動するためのデータ信号側駆動回路276、ゲート信号側駆動回路275がそれぞれ接続され、これら駆動回路に信号配線267を介して外部駆動回路290が接続されている。画素部274内には、複数のゲート線266および複数のデータ線270が配置され、ゲート線266とデータ線270との交差部にTFT264が配置されている。 The organic EL element substrate 262 is electrically connected via an FPC 279 to an external drive circuit 290 including a scanning line electrode circuit, a data signal electrode circuit, a power supply circuit and the like for driving the organic EL element 212. In the present embodiment, a switching circuit such as a TFT 264 is disposed in the pixel portion 274, and a data signal side driving circuit for driving the organic EL element 212 to a wiring such as a data line 270 and a gate line 266 to which the TFT 264 is connected. 276 and a gate signal side driving circuit 275 are connected to each other, and an external driving circuit 290 is connected to these driving circuits via a signal wiring 267. In the pixel portion 274, a plurality of gate lines 266 and a plurality of data lines 270 are disposed, and a TFT 264 is disposed at an intersection of the gate lines 266 and the data lines 270.
有機EL素子212は、電圧駆動デジタル階調方式によって駆動が行われ、画素毎にスイッチング用TFTおよび駆動用TFTの2つのTFTが配置され、駆動用TFTと有機EL素子212の第一電極213とが平坦化膜271に形成されるコンタクトホール272を介して電気的に接続されている。また、1つの画素内には駆動用TFTのゲート電位を定電位にするためのコンデンサー(図示略)が、駆動用TFTのゲート電極に接続されるように配置されている。しかし、本実施形態では、特にこれらに限定されるものではなく、駆動方式は、上述した電圧駆動デジタル階調方式でもよく、電流駆動アナログ階調方式でもよい。また、TFTの数も特に限定されるものではなく、上述した2つのTFTにより有機EL素子212を駆動してもよいし、TFT264の特性(移動度、閾値電圧)のバラツキを防止する目的で、画素内に補償回路を内蔵した2個以上のTFTを用いて有機EL素子212を駆動してもよい。 The organic EL element 212 is driven by a voltage-driven digital gradation method, and two TFTs, a switching TFT and a driving TFT, are arranged for each pixel. The driving TFT and the first electrode 213 of the organic EL element 212 Are electrically connected through a contact hole 272 formed in the planarizing film 271. In addition, a capacitor (not shown) for setting the gate potential of the driving TFT to a constant potential is arranged in one pixel so as to be connected to the gate electrode of the driving TFT. However, the present embodiment is not particularly limited to these, and the driving method may be the voltage driving digital gradation method described above or the current driving analog gradation method. The number of TFTs is not particularly limited, and the organic EL element 212 may be driven by the two TFTs described above. For the purpose of preventing variations in characteristics (mobility, threshold voltage) of the TFT 264, The organic EL element 212 may be driven using two or more TFTs each having a built-in compensation circuit in the pixel.
本実施形態の表示装置によれば、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない、さらには、低消費電力化が可能な優れた表示装置を実現できる。特に本実施形態では、アクティブマトリクス駆動型の有機EL素子基板262を採用しているため、表示品位に優れた表示装置を実現することができる。また、パッシブ駆動に比べて有機EL素子212の発光時間を長くすることができ、所望の輝度を得るための駆動電流を低減することができるため、低消費電力化を図ることができる。さらに、有機EL素子基板262とは反対側(蛍光体基板261側)から光を取り出す構成であるから、TFTや各種配線等の形成領域に関係なく発光領域を広げることができ、画素の開口率を高めることができる。 According to the display device of the present embodiment, the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced. A display device can be realized. In particular, in the present embodiment, since the active matrix driving type organic EL element substrate 262 is employed, a display device with excellent display quality can be realized. In addition, the light emission time of the organic EL element 212 can be extended as compared with passive driving, and the driving current for obtaining desired luminance can be reduced, so that power consumption can be reduced. Furthermore, since light is extracted from the side opposite to the organic EL element substrate 262 (phosphor substrate 261 side), the light emitting region can be expanded regardless of the formation region of the TFT, various wirings, etc., and the aperture ratio of the pixel Can be increased.
(5)第五実施形態
  図24は、第五実施形態に係る表示装置を示す概略断面図である。図24において、図3に示した発光デバイス30、図19に示した有機EL素子基板210および図22に示した表示装置260と同一の構成要素には同一符号を付して、その説明を省略する。
本実施形態の表示装置300は、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板と同様の構成の蛍光体基板301と、有機EL素子基板(光源)302と、液晶素子303とから概略構成されている。
(5) Fifth Embodiment FIG. 24 is a schematic cross-sectional view showing a display device according to a fifth embodiment. 24, the same components as those of the light emitting device 30 shown in FIG. 3, the organic EL element substrate 210 shown in FIG. 19, and the display device 260 shown in FIG. To do.
The display device 300 of the present embodiment has the same configuration as that of the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. A fluorescent substrate 301, an organic EL element substrate (light source) 302, and a liquid crystal element 303 are roughly configured.
有機EL素子基板302を構成する有機EL素子212は、画素毎に分割されておらず、全ての画素に共通の面状光源として機能する。また、液晶素子303は、一対の電極を用いて液晶層に印加する電圧を画素毎に制御可能な構成とされ、有機EL素子212の全面から射出された光の透過率を画素毎に制御する。すなわち、液晶素子303は、有機EL素子基板302からの光を画素毎に選択的に透過させる光シャッターとしての機能を有するようになっている。 The organic EL element 212 constituting the organic EL element substrate 302 is not divided for each pixel and functions as a planar light source common to all the pixels. Further, the liquid crystal element 303 is configured to be able to control the voltage applied to the liquid crystal layer for each pixel using a pair of electrodes, and to control the transmittance of light emitted from the entire surface of the organic EL element 212 for each pixel. . In other words, the liquid crystal element 303 has a function as an optical shutter that selectively transmits light from the organic EL element substrate 302 for each pixel.
液晶素子303としては、公知の液晶素子を用いることができる。液晶素子303は、例えば、一対の偏光板311,312と、透明電極313,314と、配向膜315,316と、基板317と、を備え、配向膜315,316間に液晶318が挟持された構造をなしている。 A known liquid crystal element can be used as the liquid crystal element 303. The liquid crystal element 303 includes, for example, a pair of polarizing plates 311 and 312, transparent electrodes 313 and 314, alignment films 315 and 316, and a substrate 317, and a liquid crystal 318 is sandwiched between the alignment films 315 and 316. It has a structure.
さらに、液晶セルと、偏光板311,312のいずれか一方との間に、光学異方性層が設けられるか、または、液晶セルと、偏光板311,312の両方との間に、光学異方性層が設けられていてもよい。表示装置300では、光取り出し側に偏光板を設けることが好ましい。 Further, an optically anisotropic layer is provided between the liquid crystal cell and one of the polarizing plates 311 and 312, or an optical difference is provided between both the liquid crystal cell and the polarizing plates 311 and 312. An isotropic layer may be provided. In the display device 300, a polarizing plate is preferably provided on the light extraction side.
偏光板311,312としては、従来の直線偏光板とλ/4板とを組み合わせたものを用いることが可能である。偏光板311,312を設けることにより、表示装置300の電極からの外光反射、基板もしくは封止基板の表面での外光反射を防止することができ、表示装置300のコントラストを向上させることができる。また、偏光板311,312としては、波長435nm以上、480nm以下における消光比が10000以上のものが好適に用いられる。 As the polarizing plates 311 and 312, a combination of a conventional linear polarizing plate and a λ / 4 plate can be used. By providing the polarizing plates 311 and 312, reflection of external light from the electrodes of the display device 300 and reflection of external light on the surface of the substrate or the sealing substrate can be prevented, and the contrast of the display device 300 can be improved. it can. In addition, as the polarizing plates 311 and 312, those having an extinction ratio of 10,000 or more at wavelengths of 435 nm or more and 480 nm or less are suitably used.
液晶セルの種類としては、特に限定されるものではなく、目的に応じて適宜選択することができる。液晶セルとしては、例えば、TNモード、VAモード、OCBモード、IPSモード、ECBモード等が挙げられる。
また、液晶素子303は、パッシブ駆動でもよいし、TFT等のスイッチング素子を用いたアクティブ駆動でもよい。
The type of liquid crystal cell is not particularly limited, and can be appropriately selected according to the purpose. Examples of the liquid crystal cell include TN mode, VA mode, OCB mode, IPS mode, ECB mode, and the like.
The liquid crystal element 303 may be passively driven or may be actively driven using a switching element such as a TFT.
本実施形態の表示装置によれば、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない、さらには、低消費電力化が可能な優れた表示装置を実現できる。また、本実施形態では、液晶素子303による画素のスイッチングと面状光源として機能する有機EL素子基板302とを組み合わせることで、消費電力をより低減することができる。 According to the display device of the present embodiment, the brightness does not change when viewed from any direction, the color does not change when viewed from any direction, and the power consumption can be reduced. A display device can be realized. Further, in the present embodiment, power consumption can be further reduced by combining pixel switching by the liquid crystal element 303 and the organic EL element substrate 302 that functions as a planar light source.
 (6)第六実施形態
 図25は、本発明に係る表示装置の第六実施形態を示す概略断面図である。図25において、図3に示した発光デバイス30、および図24に示した液晶素子303と同一の構成要素には同一符号を付して、その説明を省略する。
 本実施形態の表示装置400は、上述した発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板と同様の構成の蛍光体基板301と、液晶素子303と、バックライトユニット401とから概略構成されている。
(6) Sixth Embodiment FIG. 25 is a schematic cross-sectional view showing a sixth embodiment of the display device according to the present invention. 25, the same components as those of the light-emitting device 30 illustrated in FIG. 3 and the liquid crystal element 303 illustrated in FIG. 24 are denoted by the same reference numerals, and description thereof is omitted.
The display device 400 of this embodiment has the same configuration as the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. A fluorescent substrate 301, a liquid crystal element 303, and a backlight unit 401 are roughly configured.
 バックライトユニット401は、バックライトユニット401の底面、または側面に光源が配置される。バックライトユニット401の側面に光源が配置される場合、バックライトユニット401は、例えば、反射シート、光源、導光板、第一拡散シート、プリズムシートおよび第二拡散シートから構成される。また、バックライトユニット401とバックライト側偏光板311との間に、輝度向上フィルムを配置してもよい。
 ここでは、バックライトユニット401としては、バックライトユニット401の側面に配置された光源402と、光源402からの光を液晶素子303の面方向に導光する導光板403と、導光板403から液晶素子303に光を効率よく入射する輝度向上フィルム404とから概略構成されるものを例示した。
The backlight unit 401 has a light source disposed on the bottom surface or side surface of the backlight unit 401. When the light source is disposed on the side surface of the backlight unit 401, the backlight unit 401 includes, for example, a reflection sheet, a light source, a light guide plate, a first diffusion sheet, a prism sheet, and a second diffusion sheet. Further, a brightness enhancement film may be disposed between the backlight unit 401 and the backlight side polarizing plate 311.
Here, as the backlight unit 401, the light source 402 disposed on the side surface of the backlight unit 401, the light guide plate 403 that guides light from the light source 402 in the surface direction of the liquid crystal element 303, and the liquid crystal from the light guide plate 403 to the liquid crystal What was roughly comprised from the brightness enhancement film 404 which injects light into the element 303 efficiently was illustrated.
 表示装置400によれば、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない、さらには、低消費電力化が可能な優れた表示装置を実現できる。
 また、本実施形態では、液晶素子303による画素のスイッチングと面状光源として機能するバックライトユニット401とを組み合わせることで、消費電力をより低減することができる。
According to the display device 400, an excellent display device that does not change brightness when viewed from any direction, does not change color when viewed from any direction, and is capable of reducing power consumption. realizable.
Further, in the present embodiment, power consumption can be further reduced by combining pixel switching by the liquid crystal element 303 and the backlight unit 401 that functions as a planar light source.
「携帯電話」
上述の第一~第五実施形態の表示装置は、例えば、図26に示す携帯電話に適用できる。携帯電話310は、本体311、表示部312、音声入力部313、音声出力部314、アンテナ315、操作スイッチ316等を備えている。そして、表示部312として、上述の第一~第五実施形態の表示装置を好適に適用できる。上述の第一~第五実施形態の表示装置を携帯電話310の表示部312に適用することによって、少ない消費電力で、高輝度の映像を表示することができる。
"mobile phone"
The display devices of the first to fifth embodiments described above can be applied to, for example, the mobile phone shown in FIG. The cellular phone 310 includes a main body 311, a display unit 312, an audio input unit 313, an audio output unit 314, an antenna 315, an operation switch 316, and the like. As the display unit 312, the display devices of the first to fifth embodiments described above can be suitably applied. By applying the display devices of the first to fifth embodiments described above to the display unit 312 of the mobile phone 310, a high-luminance video can be displayed with low power consumption.
「薄型テレビ」
上述の第一~第五実施形態の表示装置は、例えば、図27に示す薄型テレビに適用できる。薄型テレビ320は、本体キャビネット321、表示部322、スピーカー323、スタンド324等を備えている。そして、表示部322として、上述の第一~第五実施形態の表示装置を好適に適用できる。上述の第一~第五実施形態の表示装置を薄型テレビ320の表示部322に適用することによって、少ない消費電力で、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない表示が実現できる。
"Flat TV"
The display devices of the first to fifth embodiments described above can be applied to, for example, a thin television shown in FIG. The thin television 320 includes a main body cabinet 321, a display unit 322, speakers 323, a stand 324, and the like. As the display unit 322, the display devices of the first to fifth embodiments described above can be suitably applied. By applying the display device of the first to fifth embodiments to the display unit 322 of the flat-screen television 320, the brightness does not change when viewed from any direction with low power consumption, and the viewing is performed from any direction. Even so, a display that does not change in color can be realized.
「照明装置」
(1)第一実施形態
図28は、第一実施形態に係る照明装置を示す概略断面図である。
本実施形態の照明装置330は、光学フィルム331と、蛍光体基板332と、有機EL素子333と、熱拡散シート334と、封止基板335と、封止樹脂336と、放熱材337と、駆動用回路338と、配線339と、引掛けシーリング340とから概略構成されている。有機EL素子333は、陽極341と、有機EL層342と、陰極343とから概略構成されている。なお、蛍光体基板322中の配光調整層に関しては、基板と光学フィルムとの間、あるいは光学フィルム上に形成されていても良い。
照明装置330においては、蛍光体基板332として、上述の発光デバイスの第一~第十六実施形態における、蛍光体層、配光調整層、障壁、および光吸収層等が形成された基板と同様の構成の蛍光体基板が用いられているので、本実施形態の表示装置によれば、どの方向から視認しても明るさの変わらない、さらには、低消費電力化が可能な優れた照明装置を実現できる。
"Lighting device"
(1) First Embodiment FIG. 28 is a schematic sectional view showing a lighting device according to the first embodiment.
The illumination device 330 of this embodiment includes an optical film 331, a phosphor substrate 332, an organic EL element 333, a thermal diffusion sheet 334, a sealing substrate 335, a sealing resin 336, a heat dissipation material 337, and a drive. A circuit 338, a wiring 339, and a hook ceiling 340 are roughly configured. The organic EL element 333 is generally composed of an anode 341, an organic EL layer 342, and a cathode 343. The light distribution adjustment layer in the phosphor substrate 322 may be formed between the substrate and the optical film or on the optical film.
In the lighting device 330, the phosphor substrate 332 is the same as the substrate on which the phosphor layer, the light distribution adjusting layer, the barrier, the light absorption layer, and the like are formed in the first to sixteenth embodiments of the light emitting device described above. Therefore, according to the display device of this embodiment, the brightness does not change even when viewed from any direction, and further, an excellent illumination device capable of reducing power consumption Can be realized.
(2)第二実施形態
図29は、第二実施形態に係る照明装置を示す概略断面図である。
照明装置250は、励起光を発する励起光源281と、蛍光体基板252とから概略構成される発光デバイス253を備えてなるものである。
蛍光体基板252は、励起光を発する励起光源と、前記励起光源に対向して配され、前記励起光によって励起され蛍光を発する蛍光体層が形成された基板と、前記基板上に形成された、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層と、前記基板との積層方向に沿った前記蛍光体層の少なくとも1つ以上の側面に光反射性の障壁と、蛍光体層における、励起光を入射させる入射面側に形成された波長選択透過反射層とから概略構成されている。
(2) Second Embodiment FIG. 29 is a schematic sectional view showing a lighting device according to a second embodiment.
The illuminating device 250 includes a light emitting device 253 that is roughly composed of an excitation light source 281 that emits excitation light and a phosphor substrate 252.
The phosphor substrate 252 is formed on the substrate, an excitation light source that emits excitation light, a substrate that is disposed opposite to the excitation light source and on which a phosphor layer that is excited by the excitation light and emits fluorescence is formed. A light distribution adjusting layer that changes the emission direction of fluorescence emitted from at least the phosphor layer, and a light-reflective barrier on at least one side surface of the phosphor layer along a stacking direction with the substrate; The phosphor layer generally includes a wavelength selective transmission / reflection layer formed on an incident surface side on which excitation light is incident.
励起光源としては、上述の発光デバイスの第一~第十六実施形態における励起光源と同様のものが挙げられる。基板としては、上述の発光デバイスの第一~第十六実施形態における基板と同様のものが挙げられる。 Examples of the excitation light source include those similar to the excitation light source in the first to sixteenth embodiments of the light emitting device described above. Examples of the substrate include the same substrates as those in the first to sixteenth embodiments of the light emitting device described above.
蛍光体層としては、上述の発光デバイスの第一~第十六実施形態における蛍光体層と同様のものが挙げられる。障壁としては、上述の発光デバイスの第一~第十六実施形態における障壁と同様のものが挙げられる。光散乱層としては、上述の発光デバイスの第一~第十六実施形態における光散乱層と同様のものが挙げられる。波長選択透過反射層としては、上述の発光デバイスの第一~第十六実施形態における波長選択透過反射層と同様のものが挙げられる。 Examples of the phosphor layer include those similar to the phosphor layer in the first to sixteenth embodiments of the light emitting device described above. Examples of the barrier include the same barriers as those in the first to sixteenth embodiments of the light emitting device described above. Examples of the light scattering layer include the same light scattering layers as those in the first to sixteenth embodiments of the light emitting device described above. Examples of the wavelength selective transmission / reflection layer include those similar to the wavelength selective transmission / reflection layer in the first to sixteenth embodiments of the light-emitting device described above.
図29を参照して、照明装置250における発光について説明する。
照明装置250において、励起光源から蛍光体層に励起光を入射すると、蛍光体層から等方的、即ちどの方向に対しても等しいエネルギーで光が放射される。この光の輝度視野角特性は、立体角の関係から視野角(発光面に垂直な方向の面と視認方向が成す角)が0°から80°付近までの間では、視野角が大きくなるほど輝度が高くなるようなプロファイルを有する。そして、この光は、基板を介して、配光調整層に入射し、配光調整層中で、光散乱し、光の進行方向が変わる。この時、配光調整層の面に対して垂直に入射した光と、斜め方向に入射した光とでは、配光調整層中の光路長は後者の方が長くなる。従って、前者に対して後者の光は、配光調整層内でよく散乱される。
With reference to FIG. 29, the light emission in the illuminating device 250 is demonstrated.
In the illumination device 250, when excitation light is incident on the phosphor layer from the excitation light source, light is emitted from the phosphor layer isotropically, that is, with equal energy in any direction. The luminance viewing angle characteristic of this light is such that the larger the viewing angle is, the larger the viewing angle is between 0 ° and 80 °, since the viewing angle (the angle formed by the surface perpendicular to the light emitting surface and the viewing direction) is related to the solid angle. Has a high profile. Then, this light enters the light distribution adjustment layer through the substrate, and light is scattered in the light distribution adjustment layer to change the traveling direction of the light. At this time, the light path length in the light distribution adjustment layer is longer in the latter case for light incident perpendicularly to the surface of the light distribution adjustment layer and light incident in an oblique direction. Therefore, the latter light with respect to the former is often scattered in the light distribution adjusting layer.
  つまり、視野角が大きくなるほど輝度が高くなるような発光プロファイルを、配光調整層を介することによって、少なくとも0°方向の輝度が、斜め方向の輝度と同等以上となるような発光プロファイルに変えることができる。その結果、どの方向から視認しても明るさの変わらない照明装置を得ることができる。また、本構成においては、蛍光体層の側面に光反射性の障壁が設けられているため、蛍光体層から発光した蛍光のうち、基板の界面で反射した蛍光成分や、蛍光体層の光取り出し側と反対側に発光する蛍光成分は、光反射性の障壁の側面で反射し、再び基板側に取り出し可能な成分にリサイクルされる。つまり、光反射性を有する障壁を蛍光体層の側面に設けることによって、蛍光体層から発光した蛍光成分を効率良く外部に取り出すことが可能となる。 In other words, a light emission profile in which the luminance increases as the viewing angle increases is changed to a light emission profile in which at least the luminance in the 0 ° direction is equal to or higher than the luminance in the oblique direction through the light distribution adjustment layer. Can do. As a result, it is possible to obtain an illumination device that does not change in brightness when viewed from any direction. In addition, in this configuration, since a light-reflective barrier is provided on the side surface of the phosphor layer, out of the fluorescence emitted from the phosphor layer, the fluorescent component reflected at the interface of the substrate and the light of the phosphor layer The fluorescent component that emits light on the side opposite to the extraction side is reflected by the side surface of the light-reflective barrier, and is recycled again to a component that can be extracted to the substrate side. That is, by providing a light-reflective barrier on the side surface of the phosphor layer, it is possible to efficiently extract the fluorescent component emitted from the phosphor layer to the outside.
  また、本構造においては、蛍光体層における、励起光を入射させる入射面側に波長選択透過反射層が設けられているため、蛍光体層の光取り出し側と反対側(背面側)に発光する蛍光成分は、蛍光体層と波長選択透過反射層の界面で反射し、光取り出し側に、有効に発光として外部に取り出すことができる。つまり、波長選択透過反射層を蛍光体層における、励起光を入射させる入射面側に設けることによって、蛍光体層から発光した蛍光成分を非常に効率良く外部に取り出すことが可能となる。 Further, in this structure, since the wavelength selective transmission / reflection layer is provided on the incident surface side on which the excitation light is incident in the phosphor layer, the phosphor layer emits light on the side opposite to the light extraction side (back side). The fluorescent component is reflected at the interface between the phosphor layer and the wavelength selective transmission / reflection layer, and can be effectively extracted to the outside as light emission on the light extraction side. That is, by providing the wavelength selective transmission / reflection layer on the incident surface side where the excitation light is incident on the phosphor layer, the fluorescent component emitted from the phosphor layer can be extracted to the outside very efficiently.
以下、実施例および比較例により本発明の一例をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。 Hereinafter, although an example of the present invention will be described more specifically with reference to examples and comparative examples, the present invention is not limited to the following examples.
「比較例」
厚さ0.7mmのガラス基板を水洗後、純水超音波洗浄10分、アセトン超音波洗浄10分、イソプロピルアルコール蒸気洗浄5分を行い、100℃にて1時間乾燥させた。次いで、ガラス基板の一面に、膜厚2μmの緑色蛍光体層を形成した。
ここで、緑色蛍光体層を形成するには、クマリン545T、0.1gに、PMMA10wt%を溶解したトルエン溶液100gを加え、加熱攪拌して緑色蛍光体形成用塗液を作製した。
"Comparative example"
A 0.7 mm thick glass substrate was washed with water, then subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 100 ° C. for 1 hour. Next, a green phosphor layer having a thickness of 2 μm was formed on one surface of the glass substrate.
Here, in order to form a green phosphor layer, 100 g of a toluene solution in which 10 wt% of PMMA was dissolved was added to 0.1 g of Coumarin 545T, and the mixture was heated and stirred to prepare a coating solution for forming a green phosphor.
 次に、作製した緑色蛍光体形成用塗液を、スピナーを用いて、基板上に塗布した。引き続き真空オーブン(100℃、10mmHgの条件)で4時間加熱乾燥し、緑色蛍光体層を膜厚2μmで形成し、蛍光体基板とした。 Next, the prepared green phosphor-forming coating solution was applied onto the substrate using a spinner. Subsequently, it was dried by heating in a vacuum oven (100 ° C., 10 mmHg) for 4 hours to form a green phosphor layer with a film thickness of 2 μm to obtain a phosphor substrate.
その後、市販の青色LEDを搭載した自作の青色指向性面光源(バックライト)を入射光として460nmの光を、比較例の蛍光体基板の背面(膜面側)から入射させ、基板から出射する光の特性を観察した際、正面方向からよりも、斜めから視認した方が明るいことを確認した。 After that, light of 460 nm is incident from the back side (film surface side) of the phosphor substrate of the comparative example using a self-made blue directional surface light source (backlight) equipped with a commercially available blue LED as incident light, and is emitted from the substrate. When observing the characteristics of the light, it was confirmed that the one viewed from an oblique direction was brighter than the front direction.
また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、青色指向性面光源(バックライト)を入射光として460nmの光を、比較例の蛍光体基板の背面(膜面側)から入射させた際、基板側から取出される蛍光の25℃における輝度視野角特性を測定した。その結果、入射光としての青色指向性面光源の、視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)が0.03であったのに対して、蛍光体基板から出射する蛍光の視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)は、1.10であった。 In addition, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), a blue directional surface light source (backlight) is used as incident light and light at 460 nm is used as the back surface (film) of the phosphor substrate of the comparative example. The luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the substrate side when it was incident from the (surface side) were measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03. On the other hand, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 1.10. .
 また、市販の全光線測定装置(積分球)(ハーフムーン:大塚電子(株)製)を用いて、460nmの青色光を、この蛍光体基板の背面から入射して蛍光体基板の前面での光取り出し効率を測定した。その結果、光取り出し効率は12.0%であった。 In addition, using a commercially available all-light measuring device (integrating sphere) (Half Moon: manufactured by Otsuka Electronics Co., Ltd.), 460 nm blue light is incident from the back surface of the phosphor substrate, and is reflected on the front surface of the phosphor substrate. The light extraction efficiency was measured. As a result, the light extraction efficiency was 12.0%.
「実施例1」
比較例と同様にして、ガラス基板の一面に、膜厚2μmの緑色蛍光体層を形成した。ここで、緑色蛍光体層を形成するには、クマリン545T、0.1gに、PMMA、10wt%を溶解したトルエン溶液100gを加え、加熱攪拌して緑色蛍光体形成用塗液を作製した。
"Example 1"
In the same manner as in the comparative example, a green phosphor layer having a thickness of 2 μm was formed on one surface of the glass substrate. Here, in order to form a green phosphor layer, 100 g of a toluene solution in which 10% by weight of PMMA was dissolved was added to 0.1 g of Coumarin 545T, and the mixture was heated and stirred to prepare a coating solution for forming a green phosphor.
次に、ガラス基板の一面(蛍光体層を形成した面と反対の面)に配光調整層を形成した。ここで、配光調整層を形成するには、まず、光散乱粒子を分散させるバインダーとして、帝人デュポン(株)製樹脂”LuxPrint 8155”:30gに、平均粒径4umの積水化成品工業(株)製テクポリマー“SBX-4“:3.59gと、平均粒径200nmの堺化学工業(株)製酸化チタン“R-25“:1.27gを加えて、自動乳鉢で30分間よくすり混ぜた後、プライミクス(株)製分散攪拌装置”フィルミックス40-40型”を用いて、開放系室温下にて、攪拌速度:6,000rpmで15分間プレ攪拌した。 Next, a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed). Here, in order to form the light distribution adjusting layer, first, as a binder for dispersing the light scattering particles, Sekisui Plastics Co., Ltd., a resin “LuxPrint 8155” manufactured by Teijin DuPont Co., Ltd. having an average particle size of 4 μm ) Made techpolymer "SBX-4": 3.59g and Titanium Chemical Industry Co., Ltd. titanium oxide "R-25": 1.27g with an average particle size of 200nm, and after thorough mixing for 30 minutes in an automatic mortar, Using a dispersion stirrer “Filmix 40-40” manufactured by Primix Co., Ltd., the mixture was pre-stirred for 15 minutes at a stirring speed of 6,000 rpm under an open system at room temperature.
次いで、ガラス基板の一面に対して、市販のスピンコーターを用いて、膜厚15umの配光調整層を形成した。次いで、真空オーブン(200℃条件)で15分間加熱乾燥し、配光調整層を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層とからなる実施例1の蛍光体基板を得た。 Next, a 15 μm thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment formed on the opposite surface. A phosphor substrate of Example 1 consisting of layers was obtained.
その後、市販の青色LEDを搭載した自作の青色指向性面光源(バックライト)を入射光として460nmの光を、実施例1の蛍光体基板の背面(蛍光体層側)から入射させ、配光調整層から出射する光の特性を観察した際、どの方向から見ても明るさに大きな違いがないことを確認した。 Thereafter, light of 460 nm is incident from the back surface (phosphor layer side) of the phosphor substrate of Example 1 by using a self-made blue directional surface light source (backlight) mounted with a commercially available blue LED as incident light, and the light distribution. When the characteristics of the light emitted from the adjustment layer were observed, it was confirmed that there was no significant difference in brightness from any direction.
また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、青色指向性面光源(バックライト)を入射光として460nmの光を、実施例1の蛍光体基板の背面(蛍光体層側)から入射させた際、配光調整層から取出される蛍光の25℃における輝度視野角特性を測定した。その結果、入射光としての青色指向性面光源の、視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)が0.03であったのに対して、蛍光体基板から出射する蛍光の視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)は、0.85であった。 Further, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), a blue directional surface light source (backlight) was used as incident light, and light of 460 nm was emitted from the rear surface of the phosphor substrate of Example 1 When the light was incident from the phosphor layer side), the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer were measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03. On the other hand, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.85. .
 また、市販の全光線測定装置(積分球)(ハーフムーン:大塚電子(株)製)を用いて、460nmの青色光を、この蛍光体基板の背面から入射して蛍光体基板の前面での光取り出し効率を測定した。その結果、光取り出し効率は9.2%であった。 In addition, using a commercially available all-light measuring device (integrating sphere) (Half Moon: manufactured by Otsuka Electronics Co., Ltd.), 460 nm blue light is incident from the back surface of the phosphor substrate, and is reflected on the front surface of the phosphor substrate. The light extraction efficiency was measured. As a result, the light extraction efficiency was 9.2%.
「実施例2」
実施例1と同様にして、ガラス基板の一面に、膜厚2μmの緑色蛍光体層を形成した。ここで、緑色蛍光体層を形成するには、クマリン545T、0.1gに、PMMA、10wt%を溶解したトルエン溶液100gを加え、加熱攪拌して緑色蛍光体形成用塗液を作製した。
"Example 2"
In the same manner as in Example 1, a green phosphor layer having a thickness of 2 μm was formed on one surface of the glass substrate. Here, in order to form a green phosphor layer, 100 g of a toluene solution in which 10% by weight of PMMA was dissolved was added to 0.1 g of Coumarin 545T, and the mixture was heated and stirred to prepare a coating solution for forming a green phosphor.
次に、ガラス基板の一面(蛍光体層を形成した面と反対の面)に配光調整層を形成した。ここで、配光調整層を形成するには、まず、光散乱粒子を分散させるバインダーとして、帝人デュポン(株)製樹脂”LuxPrint 8155”:30gに、平均粒径4umの積水化成品工業(株)製テクポリマー“SBX-4“:3.59gと、平均粒径290nmの堺化学工業(株)製酸化チタン“R-42“:0.63gを加えて、自動乳鉢で30分間よくすり混ぜた後、プライミクス(株)製分散攪拌装置”フィルミックス40-40型”を用いて、開放系室温下にて、攪拌速度:6,000rpmで15分間プレ攪拌した。 Next, a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed). Here, in order to form the light distribution adjusting layer, first, as a binder for dispersing the light scattering particles, Sekisui Plastics Co., Ltd. having an average particle diameter of 4 μm on Teijin DuPont's resin “LuxPrint 8155”: 30 g. ) Techpolymer "SBX-4": 3.59g and titanium oxide "R-42": 0.63g made by Sakai Chemical Industry Co., Ltd. with an average particle size of 290nm were added and thoroughly mixed for 30 minutes in an automatic mortar. Thereafter, the mixture was pre-stirred for 15 minutes at a stirring speed of 6,000 rpm under an open system room temperature using a dispersion stirring apparatus “Filmix 40-40 type” manufactured by Primix Co., Ltd.
次いで、ガラス基板の一面に対して、市販のスピンコーターを用いて、膜厚5umの配光調整層を形成した。次いで、真空オーブン(200℃条件)で15分間加熱乾燥し、配光調整層を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層とからなる実施例2の蛍光体基板を得た。 Next, a 5 μm thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater. Next, heat drying for 15 minutes in a vacuum oven (200 ° C condition) to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one side thereof, and a light distribution adjustment formed on the opposite side. A phosphor substrate of Example 2 consisting of layers was obtained.
その後、市販の青色LEDを搭載した自作の青色指向性面光源(バックライト)を入射光として460nmの光を、実施例2の蛍光体基板の背面(蛍光体層側)から入射させ、配光調整層から出射する光の特性を観察した際、どの方向から見ても明るさに大きな違いがないことを確認した。 Thereafter, light of 460 nm was incident from the back surface (phosphor layer side) of the phosphor substrate of Example 2 using a self-made blue directional surface light source (backlight) equipped with a commercially available blue LED as incident light, and the light distribution. When the characteristics of the light emitted from the adjustment layer were observed, it was confirmed that there was no significant difference in brightness from any direction.
また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、青色指向性面光源(バックライト)を入射光として460nmの光を、実施例2の蛍光体基板の背面(蛍光体層側)から入射させた際、配光調整層から取出される蛍光の25℃における輝度視野角特性を測定した。その結果、入射光としての青色指向性面光源の、視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)が0.03であったのに対して、蛍光体基板から出射する蛍光の視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)は、0.82であった。 In addition, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), a blue directional surface light source (backlight) was used as incident light, and light of 460 nm was emitted from the rear surface of the phosphor substrate of Example 2 ( When the light was incident from the phosphor layer side), the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer were measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03. On the other hand, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle of 60 ° with respect to the luminance value of the viewing angle of 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.82. .
 また、市販の全光線測定装置(積分球)(ハーフムーン:大塚電子(株)製)を用いて、460nmの青色光を、この蛍光体基板の背面から入射して蛍光体基板の前面での光取り出し効率を測定した。その結果、光取り出し効率は11.9%であった。 In addition, using a commercially available all-light measuring device (integrating sphere) (Half Moon: manufactured by Otsuka Electronics Co., Ltd.), 460 nm blue light is incident from the back surface of the phosphor substrate, and is reflected on the front surface of the phosphor substrate. The light extraction efficiency was measured. As a result, the light extraction efficiency was 11.9%.
「実施例3」
ガラス基板上に、障壁を形成した。以下、障壁の形成方法を詳細に説明する。
まず、エポキシ系樹脂(屈折率:1.59)、アクリル系樹脂(屈折率:1.49)、ルチル型酸化チタン(屈折率:2.71、粒径250nm)、光重合開始剤および芳香族系溶剤からなる白色感光性組成物を攪拌混合して、ネガ型レジストを調製した。次いで、ガラス基板上に、スピンコーター法により、ネガ型レジストを塗布した。
その後、80℃にて10分間プリベークして、膜厚50μmの塗膜を形成した。
"Example 3"
A barrier was formed on the glass substrate. Hereinafter, the method of forming the barrier will be described in detail.
First, epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile-type titanium oxide (refractive index: 2.71, particle size 250 nm), photopolymerization initiator and aromatic A negative photosensitive resist was prepared by stirring and mixing a white photosensitive composition comprising a system solvent. Next, a negative resist was applied on the glass substrate by a spin coater method.
Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
この塗膜に所望の画像パターンが形成できるようなマスクを被せた後、塗膜にi線(300mJ/cm)を照射し、露光した。次いで、アルカリ現像液を用いて現像して、障壁が形成された画素パターン状の構造物を得た。次いで、熱風循環式乾燥炉を用い、140℃にて60分間ポストベークして、画素を仕切る障壁を形成した。 After covering this coating film with a mask capable of forming a desired image pattern, the coating film was irradiated with i-line (300 mJ / cm 2 ) and exposed. Next, development was performed using an alkaline developer to obtain a pixel pattern structure having a barrier. Next, using a hot air circulation drying oven, post-baking was performed at 140 ° C. for 60 minutes to form a barrier partitioning the pixels.
次に、障壁で囲まれた開口部内に、蛍光体層を形成した。ここで、実施例2と同様の蛍光体材料を用いて、ディスペンサー法により、開口部内に、膜厚2umの蛍光体層を形成した。 Next, a phosphor layer was formed in the opening surrounded by the barrier. Here, a phosphor layer having a thickness of 2 μm was formed in the opening by a dispenser method using the same phosphor material as in Example 2.
次に、実施例2と同様の光散乱材料を用いて、ガラス基板の一面(蛍光体層を形成した面と反対の面)に膜厚5umの配光調整層を形成した。次いで、真空オーブン(200℃条件)で15分間加熱乾燥し、光散乱層を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層と、蛍光体層の側面に形成された障壁からなる実施例3の蛍光体基板を得た。 Next, a light distribution adjusting layer having a thickness of 5 μm was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed) using the same light scattering material as in Example 2. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes, a light scattering layer is formed, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment layer formed on the other surface thereof Thus, a phosphor substrate of Example 3 consisting of a barrier formed on the side surface of the phosphor layer was obtained.
その後、市販の青色LEDを搭載した自作の青色指向性面光源(バックライト)を入射光として460nmの光を、実施例2の蛍光体基板の背面(蛍光体層側)から入射させ、配光調整層から出射する光の特性を観察した際、どの方向から見ても明るさに大きな違いがないことを確認した。 Thereafter, light of 460 nm was incident from the back surface (phosphor layer side) of the phosphor substrate of Example 2 using a self-made blue directional surface light source (backlight) equipped with a commercially available blue LED as incident light, and the light distribution. When the characteristics of the light emitted from the adjustment layer were observed, it was confirmed that there was no significant difference in brightness from any direction.
また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、青色指向性面光源(バックライト)を入射光として460nmの光を、実施例1の蛍光体基板の背面(蛍光体層側)から入射させた際、配光調整層から取出される蛍光の25℃における輝度視野角特性を測定した。その結果、入射光としての青色指向性面光源の、視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)が0.03であったのに対して、蛍光体基板から出射する蛍光の視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)は、0.86であった。 Further, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), a blue directional surface light source (backlight) was used as incident light, and light of 460 nm was emitted from the rear surface of the phosphor substrate of Example 1 When the light was incident from the phosphor layer side), the luminance viewing angle characteristics at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer were measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03. On the other hand, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.86. .
 また、市販の全光線測定装置(積分球)(ハーフムーン:大塚電子(株)製)を用いて、460nmの青色光を、この蛍光体基板の背面から入射して蛍光体基板の前面での光取り出し効率を測定した。その結果、光取り出し効率は15.3%であった。 In addition, using a commercially available all-light measuring device (integrating sphere) (Half Moon: manufactured by Otsuka Electronics Co., Ltd.), 460 nm blue light is incident from the back surface of the phosphor substrate, and is reflected on the front surface of the phosphor substrate. The light extraction efficiency was measured. As a result, the light extraction efficiency was 15.3%.
「実施例4」
実施例3と同様にして、ガラス基板上に、障壁と、その開口部に膜厚2umの蛍光体層を形成した。
"Example 4"
In the same manner as in Example 3, a barrier layer and a phosphor layer having a thickness of 2 μm were formed on the opening on the glass substrate.
次に、蛍光体層の上における、励起光を入射させる側の面に、波長選択透過反射層として、酸化チタン(TiO:屈折率=2.30)と酸化シリコン(SiO:屈折率=1.47)をEB蒸着法により交互に6層成膜して作製した誘電体多層膜を、スパッタリング法により、100nmの膜厚で形成した。 Next, titanium oxide (TiO 2 : refractive index = 2.30) and silicon oxide (SiO 2 : refractive index =) are formed as a wavelength selective transmission / reflection layer on the surface on the phosphor layer where excitation light is incident. A dielectric multilayer film produced by alternately forming six layers of 1.47) by EB vapor deposition was formed to a thickness of 100 nm by sputtering.
最後に、実施例3と同様の光散乱材料を用いて、ガラス基板の一面(蛍光体層を形成した面と反対の面)に膜厚5umの配光調整層を形成した。
次いで、真空オーブン(200℃条件)で15分間加熱乾燥し、配光調整層を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層と、蛍光体層の側面に形成された障壁と、蛍光体層の励起光入射面側の一面に形成された波長選択透過反射層からなる実施例4の蛍光体基板を得た。
Finally, a light distribution adjusting layer having a film thickness of 5 μm was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed) using the same light scattering material as in Example 3.
Next, heat drying for 15 minutes in a vacuum oven (200 ° C condition) to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one side thereof, and a light distribution adjustment formed on the opposite side. Thus, a phosphor substrate of Example 4 was obtained, comprising a layer, a barrier formed on the side surface of the phosphor layer, and a wavelength selective transmission / reflection layer formed on one surface of the phosphor layer on the excitation light incident surface side.
その後、市販の青色LEDを搭載した自作の青色指向性面光源(バックライト)を入射光として460nmの光を、実施例4の蛍光体基板の背面(蛍光体層側)から入射させ、配光調整層から出射する光の特性を観察した際、どの方向から見ても明るさに大きな違いがないことを確認した。 Thereafter, light of 460 nm was incident from the back surface (phosphor layer side) of the phosphor substrate of Example 4 using a self-made blue directional surface light source (backlight) equipped with a commercially available blue LED as incident light, and the light distribution When the characteristics of the light emitted from the adjustment layer were observed, it was confirmed that there was no significant difference in brightness from any direction.
また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、青色指向性面光源(バックライト)を入射光として460nmの光を、実施例4の蛍光体基板の背面(蛍光体層側)から入射させた際、配光調整層から取出される蛍光の25℃における輝度視野角特性を測定した。その結果、入射光としての青色指向性面光源の、視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)が0.03であったのに対して、蛍光体基板から出射する蛍光の視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)は、0.85であった。 Further, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), a blue directional surface light source (backlight) is used as incident light, and light of 460 nm is emitted from the rear surface of the phosphor substrate of Example 4 ( When the light was incident from the phosphor layer side), the luminance viewing angle characteristic at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer was measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03. On the other hand, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.85. .
 また、市販の全光線測定装置(積分球)(ハーフムーン:大塚電子(株)製)を用いて、460nmの青色光を、この蛍光体基板の背面から入射して蛍光体基板の前面での光取り出し効率を測定した。その結果、光取り出し効率は21.2%であった。 In addition, using a commercially available all-light measuring device (integrating sphere) (Half Moon: manufactured by Otsuka Electronics Co., Ltd.), 460 nm blue light is incident from the back surface of the phosphor substrate, and is reflected on the front surface of the phosphor substrate. The light extraction efficiency was measured. As a result, the light extraction efficiency was 21.2%.
「実施例5」
比較例と同様のガラス基板の一面に、スピンコート法により、膜厚1μmの低屈折率層を形成した。低屈折率層の材料としては、屈折率が1.2~1.3程度の東京応化工業社製”TPIR-414 T-3”を用いた。
"Example 5"
A low refractive index layer having a film thickness of 1 μm was formed on one surface of the same glass substrate as in the comparative example by spin coating. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
次いで、実施例4と同様にして、低屈折率層上に、障壁と、その開口部に膜厚2umの蛍光体層を形成した。 Next, in the same manner as in Example 4, a barrier and a phosphor layer having a thickness of 2 μm were formed on the opening of the barrier on the low refractive index layer.
次いで、蛍光体層の上における、励起光を入射させる側の面一面に、スピンコート法により、膜厚1μmの低屈折率層を形成した。低屈折率層の材料としては、屈折率が1.2~1.3程度の東京応化工業社製”TPIR-414 T-3”を用いた。 Next, a low refractive index layer having a thickness of 1 μm was formed on the entire surface of the phosphor layer by spin coating on the entire surface on the side on which excitation light is incident. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
次に、低屈折率層の上の一面に、波長選択透過反射層として、酸化チタン(TiO:屈折率=2.30)と酸化シリコン(SiO:屈折率=1.47)をEB蒸着法により交互に6層成膜して作製した誘電体多層膜を、スパッタリング法により、100nmの膜厚で形成した。 Next, titanium oxide (TiO 2 : refractive index = 2.30) and silicon oxide (SiO 2 : refractive index = 1.47) are deposited on one surface of the low refractive index layer as a wavelength selective transmission / reflection layer by EB deposition. A dielectric multilayer film produced by alternately forming six layers by the method was formed to a thickness of 100 nm by the sputtering method.
最後に、実施例4と同様の光散乱材料を用いて、ガラス基板の一面(蛍光体層を形成した面と反対の面)に膜厚5umの配光調整層を形成した。次いで、真空オーブン(200℃条件)で15分間加熱乾燥し、配光調整層を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層と、蛍光体層の側面に形成された障壁と、蛍光体層の励起光入射面側の一面に形成された波長選択透過反射層と、蛍光体層の両面に形成された低屈折率層とからなる実施例5の蛍光体基板を得た。 Finally, a light distribution adjusting layer having a film thickness of 5 μm was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed) using the same light scattering material as in Example 4. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment formed on the opposite surface. Layer, a barrier formed on the side surface of the phosphor layer, a wavelength selective transmission / reflection layer formed on one surface of the phosphor layer on the excitation light incident surface side, and a low refractive index layer formed on both sides of the phosphor layer A phosphor substrate of Example 5 consisting of
その後、市販の青色LEDを搭載した自作の青色指向性面光源(バックライト)を入射光として460nmの光を、実施例5の蛍光体基板の背面(蛍光体層側)から入射させ、配光調整層から出射する光の特性を観察した際、どの方向から見ても明るさに大きな違いがないことを確認した。 Thereafter, light of 460 nm is incident from the back surface (phosphor layer side) of the phosphor substrate of Example 5 using a self-made blue directional surface light source (backlight) equipped with a commercially available blue LED as incident light, and the light distribution is made. When the characteristics of the light emitted from the adjustment layer were observed, it was confirmed that there was no significant difference in brightness from any direction.
また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、青色指向性面光源(バックライト)を入射光として460nmの光を、実施例5の蛍光体基板の背面(蛍光体層側)から入射させた際、配光調整層から取出される蛍光の25℃における輝度視野角特性を測定した。その結果、入射光としての青色指向性面光源の、視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)が0.03であったのに対して、蛍光体基板から出射する蛍光の視野角0°(法線方向)の輝度値に対する視野角60°方向の相対輝度値(L60/L0)は、0.85であった。 In addition, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), light of 460 nm was incident on a blue directional surface light source (backlight) as the incident light, and the back surface of the phosphor substrate of Example 5 ( When the light was incident from the phosphor layer side), the luminance viewing angle characteristic at 25 ° C. of the fluorescence extracted from the light distribution adjusting layer was measured. As a result, the relative luminance value (L 60 / L 0 ) in the direction of 60 ° viewing angle with respect to the luminance value in the viewing angle 0 ° (normal direction) of the blue directional surface light source as incident light was 0.03. On the other hand, the relative luminance value (L 60 / L 0 ) in the direction of the viewing angle 60 ° with respect to the luminance value of the viewing angle 0 ° (normal direction) of the fluorescence emitted from the phosphor substrate was 0.85. .
 また、市販の全光線測定装置(積分球)(ハーフムーン:大塚電子(株)製)を用いて、460nmの青色光を、この蛍光体基板の背面から入射して蛍光体基板の前面での光取り出し効率を測定した。その結果、光取り出し効率は21.2%であった。比較例、および実施例1~5の蛍光体基板における相対輝度比、全光線透過率、各例と比較例1との比較結果を表1に示す。 In addition, using a commercially available all-light measuring device (integrating sphere) (Half Moon: manufactured by Otsuka Electronics Co., Ltd.), 460 nm blue light is incident from the back surface of the phosphor substrate, and is reflected on the front surface of the phosphor substrate. The light extraction efficiency was measured. As a result, the light extraction efficiency was 21.2%. Table 1 shows the relative luminance ratio, total light transmittance, and comparison results between each example and Comparative Example 1 in the comparative examples and the phosphor substrates of Examples 1 to 5.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
「実施例6」[青色有機EL+蛍光体方式]
実施例5と同様にして、ガラス基板上に、スピンコート法により、膜厚1μmの低屈折率層を形成した。低屈折率層の材料としては、屈折率が1.2~1.3程度の東京応化工業社製”TPIR-414 T-3”を用いた。
次いで、低屈折率層上に、障壁(光散乱膜)を形成した。以下、障壁の形成方法を詳細に説明する。
まず、エポキシ系樹脂(屈折率:1.59)、アクリル系樹脂(屈折率:1.49)、ルチル型酸化チタン(屈折率:2.71、粒径250nm)、光重合開始剤および芳香族系溶剤からなる白色感光性組成物を攪拌混合して、ネガ型レジストを調製した。次いで、ガラス基板上に、スピンコーター法により、ネガ型レジストを塗布した。
その後、80℃にて10分間プリベークして、膜厚50μmの塗膜を形成した。
“Example 6” [Blue organic EL + phosphor method]
In the same manner as in Example 5, a low refractive index layer having a thickness of 1 μm was formed on a glass substrate by spin coating. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
Next, a barrier (light scattering film) was formed on the low refractive index layer. Hereinafter, the method of forming the barrier will be described in detail.
First, epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile-type titanium oxide (refractive index: 2.71, particle size 250 nm), photopolymerization initiator and aromatic A negative photosensitive resist was prepared by stirring and mixing a white photosensitive composition comprising a system solvent. Next, a negative resist was applied on the glass substrate by a spin coater method.
Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers.
この塗膜に所望の画像パターンが形成できるようなマスクを被せた後、塗膜にi線(300mJ/cm)を照射し、露光した。次いで、アルカリ現像液を用いて現像して、障壁が形成された画素パターン状の構造物を得た。次いで、熱風循環式乾燥炉を用い、140℃にて60分間ポストベークして、画素を仕切る障壁を形成した。 After covering this coating film with a mask capable of forming a desired image pattern, the coating film was irradiated with i-line (300 mJ / cm 2 ) and exposed. Next, development was performed using an alkaline developer to obtain a pixel pattern structure having a barrier. Next, using a hot air circulation drying oven, post-baking was performed at 140 ° C. for 60 minutes to form a barrier partitioning the pixels.
次に、障壁で囲まれた開口部内に、赤色蛍光体層、緑色蛍光体層および青色散乱体層を形成した。以下、赤色蛍光体層、緑色蛍光体層および青色散乱体層の形成方法を詳細に説明する。 Next, a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed in the opening surrounded by the barrier. Hereinafter, a method for forming the red phosphor layer, the green phosphor layer, and the blue scatterer layer will be described in detail.
赤色蛍光体層を形成するには、まず、赤色蛍光体ローダミン6G、0.01gに、10wt%のポリスチレンを溶解したジクロロベンゼン溶液100gを加え、更に屈折率1.21の粒径20nmの中空シリカを40g添加し、加熱攪拌して赤色蛍光体形成用塗液を作製した。 In order to form a red phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% polystyrene is dissolved is added to 0.01 g of red phosphor rhodamine 6G, and hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm. Was added, and the mixture was heated and stirred to prepare a red phosphor-forming coating solution.
次に、作製した赤色蛍光体形成用塗液を、ディスペンサー手法で、隔壁で区画された領域にパターン塗布した。引き続き真空オーブン(200℃、10mmHgの条件)で4時間加熱乾燥し、赤色蛍光体層を膜厚5μmでパターン形成した。 Next, the produced red phosphor-forming coating solution was applied in a pattern to regions partitioned by the partition walls by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a red phosphor layer was patterned with a film thickness of 5 μm.
 緑色蛍光体層を形成するには、まず、クマリン6、0.01gに、10wt%のポリスチレンを溶解したジクロロベンゼン溶液100gを加え、更に屈折率1.21の粒径20nmの中空シリカを40g添加し、加熱攪拌して緑色蛍光体形成用塗液を作製した。次に、作製した緑色蛍光体形成用塗液を、ディスペンサー手法で、隔壁103で区画された領域にパターン塗布した。引き続き真空オーブン(200℃、10mmHgの条件)で4時間加熱乾燥し、緑色蛍光体層を膜厚5μmでパターン形成した。 To form a green phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% of polystyrene is dissolved is added to 0.01 g of coumarin, and then 40 g of hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm is added. Then, the mixture was heated and stirred to produce a green phosphor forming coating solution. Next, the produced green phosphor forming coating solution was applied in a pattern to the area partitioned by the partition wall 103 by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a green phosphor layer was patterned with a film thickness of 5 μm.
青色散乱体層を形成するには、まず、光散乱粒子を分散させるバインダーとして、帝人デュポン(株)製樹脂”LuxPrint 8155”:30gに、平均粒径4umの積水化成品工業(株)製テクポリマー“SBX-4“:3.59gと、平均粒径200nmの堺化学工業(株)製酸化チタン“R-25“:1.27gを加えて、自動乳鉢で30分間よくすり混ぜた後、プライミクス(株)製分散攪拌装置”フィルミックス40-40型”を用いて、開放系室温下にて、攪拌速度:6,000rpmで15分間プレ攪拌して、青色光散乱層形成用塗液とした。 In order to form a blue scatterer layer, first, as a binder for dispersing light scattering particles, a resin “LuxPrint 8155” manufactured by Teijin DuPont Co., Ltd .: 30 g, Sekisui Plastics Co., Ltd. Polymer "SBX-4": 3.59 g and titanium oxide "R-25": 1.27 g manufactured by Sakai Chemical Industry Co., Ltd. with an average particle size of 200 nm are added and thoroughly mixed for 30 minutes in an automatic mortar. Using a dispersion stirrer “Filmix 40-40” manufactured by Co., Ltd., the mixture was pre-stirred for 15 minutes at a stirring speed of 6,000 rpm under an open system room temperature to obtain a coating solution for forming a blue light scattering layer. .
 次に、作製した青色光散乱層形成用塗液を、ディスペンサー手法で、隔壁で区画された領域にパターン塗布した。引き続き真空オーブン(200℃、10mmHgの条件)で4時間加熱乾燥し、青色蛍散乱体層を膜厚5μmでパターン形成した。 Next, the prepared blue light scattering layer forming coating solution was applied in a pattern to regions partitioned by the partition walls by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a blue firefly scatterer layer with a film thickness of 5 μm.
次いで、赤色蛍光体層、緑色蛍光体層および青色散乱体層の上における、励起光を入射させる側の面一面に、スピンコート法により、膜厚1μmの低屈折率層を形成した。低屈折率層の材料としては、屈折率が1.2~1.3程度の東京応化工業社製”TPIR-414 T-3”を用いた。 Next, a low refractive index layer having a thickness of 1 μm was formed on the entire surface of the red phosphor layer, the green phosphor layer, and the blue scatterer layer on the side where the excitation light is incident by spin coating. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
次に、低屈折率層の上の一面に、波長選択透過反射層として、酸化チタン(TiO:屈折率=2.30)と酸化シリコン(SiO:屈折率=1.47)をEB蒸着法で交互に6層成膜して作製した誘電体多層膜を、スパッタリング法により、100nmの膜厚で形成した。 Next, titanium oxide (TiO 2 : refractive index = 2.30) and silicon oxide (SiO 2 : refractive index = 1.47) are deposited on one surface of the low refractive index layer as a wavelength selective transmission / reflection layer by EB deposition. A dielectric multilayer film produced by alternately forming six layers by the method was formed to a thickness of 100 nm by a sputtering method.
次に、ガラス基板の一面(蛍光体層を形成した面と反対の面)に配光調整層を形成した。ここで、配光調整層を形成するには、まず、光散乱粒子を分散させるバインダーとして、帝人デュポン(株)製樹脂”LuxPrint 8155”:30gに、平均粒径4umの積水化成品工業(株)製テクポリマー“SBX-4“:3.59gと、平均粒径290nmの堺化学工業(株)製酸化チタン“R-42“:0.63gを加えて、自動乳鉢で30分間よくすり混ぜた後、プライミクス(株)製分散攪拌装置”フィルミックス40-40型”を用いて、開放系室温下にて、攪拌速度:6,000rpmで15分間プレ攪拌した。 Next, a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed). Here, in order to form the light distribution adjusting layer, first, as a binder for dispersing the light scattering particles, Sekisui Plastics Co., Ltd. having an average particle diameter of 4 μm on Teijin DuPont's resin “LuxPrint 8155”: 30 g. ) Techpolymer “SBX-4”: 3.59 g and titanium oxide “R-42”: 0.63 g manufactured by Sakai Chemical Industry Co., Ltd. with an average particle size of 290 nm were added and thoroughly mixed for 30 minutes in an automatic mortar. Thereafter, the mixture was pre-stirred for 15 minutes at a stirring speed of 6,000 rpm under an open system room temperature using a dispersion stirring apparatus “Filmix 40-40 type” manufactured by Primix Co., Ltd.
次いで、ガラス基板の一面に対して、市販のスピンコーターを用いて、膜厚5umの配光調整層を形成した。次いで、真空オーブン(200℃条件)で15分間加熱乾燥し、配光調整層を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層と、蛍光体層の側面に形成された障壁と、蛍光体層の励起光入射面側の一面に形成された波長選択透過反射層からなる実施例6の蛍光体基板を得た。 Next, a 5 μm thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater. Next, it is heated and dried in a vacuum oven (200 ° C. condition) for 15 minutes to form a light distribution adjustment layer, a glass substrate, a phosphor layer formed on one surface thereof, and a light distribution adjustment formed on the opposite surface. A phosphor substrate of Example 6 was obtained comprising a layer, a barrier formed on the side surface of the phosphor layer, and a wavelength selective transmission / reflection layer formed on one surface of the phosphor layer on the excitation light incident surface side.
一方、厚さ0.7mmのガラス基板上に、スパッタリング法により、銀からなる膜厚100nmの反射電極を成膜し、その反射電極上に、スパッタリング法により、膜厚20nmの透インジウム-スズ酸化物(ITO)を成膜することによって、第一電極(陽極)を形成した。その後、従来のフォトリソグラフィー法により、第一電極の幅が160μm、200μmピッチで90本のストライプにパターニングした。 On the other hand, a reflective electrode having a thickness of 100 nm made of silver is formed on a glass substrate having a thickness of 0.7 mm by a sputtering method, and a 20 nm-thick indium-tin oxide film is formed on the reflective electrode by a sputtering method. A first electrode (anode) was formed by depositing an object (ITO). Thereafter, the first electrode was patterned into 90 stripes with a width of 160 μm and a pitch of 200 μm by a conventional photolithography method.
次に、第一電極上に、スパッタリング法により、SiOを200nm積層し、従来のフォトリソグラフィー法により、第一電極のエッジ部のみを覆うようにパターン化した。ここでは、第一電極の端から10μm分だけ短辺をSiOで覆う構造とした。これを、水洗後、純水超音波洗浄10分、アセトン超音波洗浄10分、イソプロピルアルコール蒸気洗浄5分を行い、120℃にて1時間乾燥させた。 Next, 200 nm of SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography. Here, a short side of 10 μm from the end of the first electrode is covered with SiO 2 . This was washed with water, subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.
次に、第一電極を形成した基板を、インライン型抵抗加熱蒸着装置内の基板ホルダーに固定し、1×10-4Pa以下の真空まで減圧し、有機発光層を含む有機EL層を構成する各層を形成した。以下、有機EL層を構成する各層の形成方法を詳細に説明する。
まず、正孔注入材料として、1,1-ビス-ジ-4-トリルアミノ-フェニル-シクロヘキサン(TAPC)を用い、抵抗加熱蒸着法により膜厚100nmの正孔注入層を形成した。次いで、正孔輸送材料として、N,N’-di-l-ナフチル-N,N ’-ジフェニル-1,1’-ビフェニル-1,1’-ビフェニル-4,4’ -ジアミン(NPD)を用い、抵抗加熱蒸着法により膜厚40nmの正孔輸送層を形成した。
Next, the substrate on which the first electrode is formed is fixed to a substrate holder in an in-line type resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 × 10 −4 Pa or less to form an organic EL layer including an organic light emitting layer. Each layer was formed. Hereinafter, the formation method of each layer which comprises an organic EL layer is demonstrated in detail.
First, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition. Next, N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition.
次に、正孔輸送層上の所望の画素位置に、青色の有機発光層(厚さ:30nm)を形成した。この青色の有機発光層は、1,4-ビス-トリフェニルシリル-ベンゼン(UGH-2)(ホスト材料)と、ビス[(4,6-ジフルオロフェニル)-ピリジナト-N,C2’]ピコリネート イリジウム(III)(FIrpic)(青色燐光発光ドーパント)とを、それぞれ蒸着速度1.5Å/sec、0.2Å/secで共蒸着することによって形成した。 Next, a blue organic light emitting layer (thickness: 30 nm) was formed at a desired pixel position on the hole transport layer. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic) (blue phosphorescent dopant) was co-deposited at a deposition rate of 1.5 Å / sec and 0.2 Å / sec, respectively.
次に、有機発光層の上に、2,9-ジメチル-4,7-ジフェニル-1,10-フェナントロリン(BCP)を用いて、正孔防止層(厚さ:10nm)を形成した。次に、正孔防止層上に、トリス(8-ヒドロキシキノリン)アルミニウム(Alq)を用いて電子輸送層(厚さ:30nm)を形成した。次に、電子輸送層上に、フッ化リチウム(LiF)を用いて電子注入層(厚さ:0.5nm)を形成した。
以上の処理によって、有機EL層を構成する各層を形成した。
Next, a hole blocking layer (thickness: 10 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ). Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
Through the above processing, each layer constituting the organic EL layer was formed.
この後、第二電極として半透明電極を形成した。
まず、基板を金属蒸着用チャンバーに固定し、半透明電極形成用のシャドーマスクと基板をアライメントした。なお、シャドーマスクとしては、第一電極のストライプと対向する向きに、500μm幅、600μmピッチのストライプ状に第二電極を形成できるように開口部が設けられたマスクを用いた。
Thereafter, a semitransparent electrode was formed as the second electrode.
First, the substrate was fixed in a metal vapor deposition chamber, and the shadow mask for forming the translucent electrode was aligned with the substrate. As the shadow mask, a mask provided with an opening so that the second electrode can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction facing the stripe of the first electrode.
次いで、電子注入層の表面に、真空蒸着法により、マグネシウムと銀とを、それぞれ蒸着速度0.1Å/sec、0.9Å/secで共蒸着することによって、マグネシウム銀を所望のパターンで形成(厚さ:1nm)した。
さらに、その上に、干渉効果を強調する目的、および、第二電極での配線抵抗による電圧降下を防止する目的で、銀を1Å/secの蒸着速度で所望のパターンで形成(厚さ:19nm)した。
以上の処理によって、半透明電極を形成した。
Next, magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 Å / sec and 0.9 Å / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm).
Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did.
A semitransparent electrode was formed by the above treatment.
ここで、第一電極と第二電極の間では、マイクロキャビティ効果(干渉効果)が発現し、正面輝度を高めることが可能となる。これにより、有機EL層からの発光エネルギーを効率よく光取出部側に伝搬させることができる。また、同様にマイクロキャビティ効果により、発光ピークを460nm、半値幅を50nmに調整した。 Here, a microcavity effect (interference effect) appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic EL layer can be efficiently propagated to the light extraction part side. Similarly, the emission peak was adjusted to 460 nm and the half value width to 50 nm by the microcavity effect.
次に、プラズマCVD法により、シャドーマスクを用いて表示部の端から上下左右2mmの封止エリアまで、厚さ3μmのSiOからなる無機保護層をパターニング形成した。
以上の処理によって、有機EL素子が形成された有機EL素子基板を得た。
Next, an inorganic protective layer made of SiO 2 having a thickness of 3 μm was formed by patterning by plasma CVD using a shadow mask from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions.
By the above process, an organic EL element substrate on which an organic EL element was formed was obtained.
次に、以上のようにして作製した有機EL素子基板と蛍光体基板とを、画素配置位置の外側に形成されている位置合わせマーカーにより位置合わせを行った。なお、予め蛍光体基板には、熱硬化樹脂を塗布した。
有機EL素子基板と蛍光体基板を位置合わせした後、熱硬化樹脂を介して両基板を密着し、80℃、2時間加熱することにより、熱硬化樹脂を硬化し、有機EL素子基板と蛍光体基板を貼り合せた。なお、両基板を貼り合わせる工程は、有機層が水分により劣化することを防止するために、ドライエアー環境下(水分量:-80℃)で行った。
Next, the organic EL element substrate and the phosphor substrate produced as described above were aligned using an alignment marker formed outside the pixel arrangement position. A thermosetting resin was applied to the phosphor substrate in advance.
After aligning the organic EL element substrate and the phosphor substrate, the two substrates are brought into close contact with each other through a thermosetting resin, and heated at 80 ° C. for 2 hours to cure the thermosetting resin, and the organic EL element substrate and the phosphor The substrates were bonded together. Note that the step of bonding the two substrates was performed in a dry air environment (water content: −80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
最後に、周辺に形成されている端子を外部電源に接続することにより、実施例6の有機EL表示装置を完成した。ここで、外部電源により所望の電流を所望のストライプ状電極に印加することによって、青色発光有機EL素子を任意にスイッチング可能な励起光源とし、赤色蛍光体層にて青色光を赤色光に変換し、緑色蛍光体層にて青色光を緑色光に変換することにより、赤色、緑色の発光が得られるとともに、青色散乱体層を介することにより、青色発光が得られ、さらにこれらの発光プロファイルを、配光調整層によって合せることがきた。これにより、フルカラー表示が可能で、良好な画像、どの方向から視認しても明るさや色味に変化のない視野角特性の良好な表示が得られた。 Finally, an organic EL display device of Example 6 was completed by connecting terminals formed in the periphery to an external power source. Here, by applying a desired current to a desired striped electrode from an external power source, the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer. By converting blue light into green light in the green phosphor layer, red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer. As a result, full-color display was possible, and a good image and a display with good viewing angle characteristics that did not change in brightness or color even when viewed from any direction were obtained.
 また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、実施例6の有機EL表示装置において、マクベスカラー全24色をそれぞれ表示させた際の色度視野角特性を測定した。その結果、該表示装置を正面から視認した際の色度u’_正面,v’_正面の値に対する該装置を視野角60°方向から視認した際の色度u’_60°,v’_60°の値の色変化Δu’v’(=√((u’_正面-u’_60°)2+(v’_正面-v’_60°)2))が、全24色において、0.01以下であった。一般的に、該色変化Δu’v’の値が0.015前後以下になると、人間の目に色差を検知できなくなると言われている。 Further, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), in the organic EL display device of Example 6, chromaticity viewing angle characteristics when all 24 colors of Macbeth color are displayed are shown. It was measured. As a result, the chromaticity u'_60 °, v'_60 when the display device is viewed from the direction of the viewing angle of 60 ° relative to the value of the chromaticity u′_front, v′_front when the display device is viewed from the front. The color change Δu'v '(= √ ((u'_front-u'_60 °) 2 + (v'_front-v'_60 °) 2 )) is 0. 01 or less. In general, it is said that when the value of the color change Δu′v ′ is about 0.015 or less, a color difference cannot be detected by human eyes.
「実施例7」[アクティブ駆動型青色有機EL+蛍光体方式]
実施例6と同様にして、蛍光体基板を作製した。
"Example 7" [active drive type blue organic EL + phosphor method]
A phosphor substrate was produced in the same manner as in Example 6.
100×100mm角のガラス基板上に、PECVD法を用いて、アモルファスシリコン半導体膜を形成した。次いで、結晶化処理を施すことにより、多結晶シリコン半導体膜を形成した。
次いで、フォトリソグラフィー法を用いて多結晶シリコン半導体膜を複数の島状にパターンニングした。次いで、パターニングした多結晶シリコン半導体層の上に、ゲート絶縁膜およびゲート電極層をこの順番で形成し、フォトリソグラフィー法を用いてパターニングを行った。
An amorphous silicon semiconductor film was formed on a 100 × 100 mm square glass substrate by PECVD. Next, a polycrystalline silicon semiconductor film was formed by performing a crystallization treatment.
Next, the polycrystalline silicon semiconductor film was patterned into a plurality of islands using a photolithography method. Next, a gate insulating film and a gate electrode layer were formed in this order on the patterned polycrystalline silicon semiconductor layer, and patterning was performed using a photolithography method.
その後、パターニングした多結晶シリコン半導体膜にリン等の不純物元素をドーピングすることによりソースおよびドレイン領域を形成し、TFT素子を作製した。その後、平坦化膜を形成した。平坦化膜としては、PECVD法により形成した窒化シリコン膜と、スピンコーター法により形成したアクリル系樹脂層とを、この順で積層し形成した。 Thereafter, the patterned polycrystalline silicon semiconductor film was doped with an impurity element such as phosphorus to form source and drain regions, and a TFT element was fabricated. Thereafter, a planarizing film was formed. As the planarizing film, a silicon nitride film formed by PECVD and an acrylic resin layer formed by spin coater were laminated in this order.
以下、平坦化膜の形成方法を詳細に説明する。
まず、窒化シリコン膜を形成した後、窒化シリコン膜とゲート絶縁膜とを一括してエッチングすることによりソースおよび/またはドレイン領域に通ずるコンタクトホールを形成し、続いて、ソース配線を形成した。
Hereinafter, a method for forming the planarizing film will be described in detail.
First, after a silicon nitride film was formed, the silicon nitride film and the gate insulating film were collectively etched to form a contact hole leading to the source and / or drain region, and then a source wiring was formed.
その後、アクリル系樹脂層を形成し、ゲート絶縁膜および窒化シリコン膜に穿孔したドレイン領域のコンタクトホールと同じ位置に、ドレイン領域に通ずるコンタクトホールを形成することにより、アクティブマトリクス基板を完成させた。平坦化膜としての機能は、アクリル系樹脂層で実現される。なお、TFTのゲート電位を定電位にするためのコンデンサーは、スイッチング用TFTのドレインと駆動用TFTのソースとの間に層間絶縁膜等の絶縁膜を介することで形成される。 Thereafter, an acrylic resin layer was formed, and a contact hole leading to the drain region was formed at the same position as the contact hole of the drain region drilled in the gate insulating film and the silicon nitride film, thereby completing the active matrix substrate. The function as a planarizing film is realized by an acrylic resin layer. Note that the capacitor for setting the gate potential of the TFT to a constant potential is formed by interposing an insulating film such as an interlayer insulating film between the drain of the switching TFT and the source of the driving TFT.
アクティブマトリクス基板上に、平坦化層を貫通して駆動用TFTと、赤色発光有機EL素子の第一電極と、緑色発光有機EL素子の第一電極と、青色発光有機EL素子の第一電極とをそれぞれ電気的に接続するコンタクトホールを形成した。 A driving TFT, a first electrode of a red light emitting organic EL element, a first electrode of a green light emitting organic EL element, and a first electrode of a blue light emitting organic EL element, penetrating a planarizing layer on an active matrix substrate Contact holes were formed to electrically connect the two.
次に、各発光画素を駆動するためのTFTと接続した平坦化層を貫通して設けられたコンタクトホールに電気的に接続するように、スパッタリング法により、各画素の第一電極(陽極)を形成した。第一電極は、膜厚150nmのAl(アルミニウム)膜と、膜厚20nmのIZO(酸化インジウム-酸化亜鉛)とを積層して形成した。 Next, the first electrode (anode) of each pixel is formed by sputtering so as to be electrically connected to the contact hole provided through the planarization layer connected to the TFT for driving each light emitting pixel. Formed. The first electrode was formed by laminating an Al (aluminum) film having a thickness of 150 nm and an IZO (indium oxide-zinc oxide) film having a thickness of 20 nm.
次に、従来のフォトリソグラフィー法により、各画素に対応した形状に、第一電極をパターン化した。ここでは、第一電極の面積としては、300μm×160μmとした。また、100×100角の基板に形成した。表示部は80mm×80mmであり、表示部の上下左右に2mm幅の封止エリアを設け、表示部の短辺側には、さらに封止エリアの外にそれぞれ2mmの端子取出し部を設けた。表示部の長辺側には、折り曲げを行う方に、2mm端子取出し部を設けた。 Next, the first electrode was patterned into a shape corresponding to each pixel by a conventional photolithography method. Here, the area of the first electrode was 300 μm × 160 μm. Further, it was formed on a 100 × 100 square substrate. The display unit was 80 mm × 80 mm, a 2 mm wide sealing area was provided on the top, bottom, left, and right of the display unit, and a 2 mm terminal lead-out unit was further provided outside the sealing area on the short side of the display unit. On the long side of the display part, a 2 mm terminal extraction part was provided in the direction of bending.
次に、第一電極上に、スパッタリング法により、SiOを200nm積層し、従来のフォトリソグラフィー法により、第一電極のエッジ部のみを覆うようにパターン化した。ここでは、第一電極の端から10μm分だけ4辺をSiOで覆う構造とし、エッジカバーとした。 Next, 200 nm of SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography. Here, a structure in which four sides from the end of the first electrode by 10 μm are covered with SiO 2 is used as an edge cover.
次に、第一電極を形成したアクティブマトリクス基板を洗浄した。アクティブマトリクス基板の洗浄方法としては、例えば、アセトン、イソプロピルアルコールを用いて、超音波洗浄を10分間行い、続いて、UV-オゾン洗浄を30分間行った。 Next, the active matrix substrate on which the first electrode was formed was washed. As a method for cleaning the active matrix substrate, for example, acetone and isopropyl alcohol were used for ultrasonic cleaning for 10 minutes, followed by UV-ozone cleaning for 30 minutes.
次に、第一電極を形成したアクティブマトリクス基板を、インライン型抵抗加熱蒸着装置内の基板ホルダーに固定し、1×10-4Pa以下の真空まで減圧し、有機発光層を含む有機EL層を構成する各層を形成した。以下、有機EL層を構成する各層の形成方法を詳細に説明する。
まず、正孔注入材料として、1,1-ビス-ジ-4-トリルアミノ-フェニル-シクロヘキサン(TAPC)を用い、抵抗加熱蒸着法により膜厚100nmの正孔注入層を形成した。
Next, the active matrix substrate on which the first electrode is formed is fixed to a substrate holder in an in-line resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 × 10 −4 Pa or less, and an organic EL layer including an organic light emitting layer is formed Each constituent layer was formed. Hereinafter, the formation method of each layer which comprises an organic EL layer is demonstrated in detail.
First, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
次に、正孔輸送材料として、N,N’-di-l-ナフチル-N,N ’-ジフェニル-1,1’-ビフェニル-1,1’-ビフェニル-4,4’ -ジアミン(NPD)を用い、抵抗加熱蒸着法により膜厚40nmの正孔輸送層を形成した。次に、正孔輸送層上の所望の画素位置に、青色の有機発光層(厚さ:30nm)を形成した。この青色の有機発光層は、1,4-ビス-トリフェニルシリル-ベンゼン(UGH-2)(ホスト材料)と、ビス[(4,6-ジフルオロフェニル)-ピリジナト-N,C2’]ピコリネート イリジウム(III)(FIrpic)(青色燐光発光ドーパント)とを、それぞれ蒸着速度1.5Å/sec、0.2Å/secで共蒸着することによって形成した。 Next, N, N′-di-1-naphthyl-N, N ′ ′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′4-diamine (NPD) is used as a hole transport material. A hole transport layer having a thickness of 40 nm was formed by resistance heating vapor deposition. Next, a blue organic light emitting layer (thickness: 30 nm) was formed at a desired pixel position on the hole transport layer. This blue organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] picolinate iridium (III) (FIrpic) (blue phosphorescent dopant) was co-deposited at a deposition rate of 1.5 Å / sec and 0.2 Å / sec, respectively.
次に、有機発光層の上に、2,9-ジメチル-4,7-ジフェニル-1,10-フェナントロリン(BCP)を用いて、正孔防止層(厚さ:10nm)を形成した。次に、正孔防止層上に、トリス(8-ヒドロキシキノリン)アルミニウム(Alq)を用いて電子輸送層(厚さ:30nm)を形成した。
次に、電子輸送層上に、フッ化リチウム(LiF)を用いて電子注入層(厚さ:0.5nm)を形成した。
以上の処理によって、有機EL層を構成する各層を形成した。
Next, a hole blocking layer (thickness: 10 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
Through the above processing, each layer constituting the organic EL layer was formed.
この後、第二電極として半透明電極を形成した。
まず、有機EL層を形成したアクティブマトリクス基板を金属蒸着用チャンバーに固定し、半透明電極形成用のシャドーマスクとアクティブマトリクス基板をアライメントした。なお、シャドーマスクとしては、第一電極のストライプと対向する向きに、2mm幅のストライプ状に第二電極を形成できるように開口部が設けられたマスクを用いた。
Thereafter, a semitransparent electrode was formed as the second electrode.
First, the active matrix substrate on which the organic EL layer was formed was fixed in a metal deposition chamber, and the shadow mask for forming the translucent electrode and the active matrix substrate were aligned. As the shadow mask, a mask provided with an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction facing the stripe of the first electrode.
次いで、電子注入層の表面に、真空蒸着法により、マグネシウムと銀とを、それぞれ蒸着速度0.1Å/sec、0.9Å/secで共蒸着することによって、マグネシウム銀を所望のパターンで形成(厚さ:1nm)した。
さらに、その上に、干渉効果を強調する目的、および、第二電極での配線抵抗による電圧降下を防止する目的で、銀を1Å/secの蒸着速度で所望のパターンで形成(厚さ:19nm)した。
以上の処理によって、半透明電極を形成した。
Next, magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 Å / sec and 0.9 Å / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm).
Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did.
A semitransparent electrode was formed by the above treatment.
ここで、第一電極と第二電極の間では、マイクロキャビティ効果(干渉効果)が発現し、正面輝度を高めることが可能となる。これにより、有機EL層からの発光エネルギーを効率よく光取出部側に伝搬させることができる。また、同様にマイクロキャビティ効果により、発光ピークを460nm、半値幅を50nmに調整した。 Here, a microcavity effect (interference effect) appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic EL layer can be efficiently propagated to the light extraction part side. Similarly, the emission peak was adjusted to 460 nm and the half value width to 50 nm by the microcavity effect.
次に、プラズマCVD法により、シャドーマスクを用いて表示部の端から上下左右2mmの封止エリアまで、厚さ3μmのSiOからなる無機保護層をパターニング形成した。
以上の処理によって、有機EL素子が形成されたアクティブ駆動型有機EL素子基板を得た。
Next, an inorganic protective layer made of SiO 2 having a thickness of 3 μm was formed by patterning by plasma CVD using a shadow mask from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions.
Through the above process, an active drive type organic EL element substrate on which an organic EL element was formed was obtained.
次に、以上のようにして作製したアクティブ駆動型有機EL素子基板と蛍光体基板とを、画素配置位置の外側に形成されている位置合わせマーカーにより位置合わせを行った。なお、予め蛍光体基板には、熱硬化樹脂を塗布した。 Next, the active drive type organic EL element substrate and the phosphor substrate manufactured as described above were aligned using an alignment marker formed outside the pixel arrangement position. A thermosetting resin was applied to the phosphor substrate in advance.
アクティブ駆動型有機EL素子基板と蛍光体基板を位置合わせした後、熱硬化樹脂を介して両基板を密着し、90℃、2時間加熱することにより、熱硬化樹脂を硬化し、有機EL素子基板と蛍光体基板を貼り合せた。なお、両基板を貼り合わせる工程は、有機層が水分により劣化することを防止するために、ドライエアー環境下(水分量:-80℃)で行った。 After aligning the active drive type organic EL element substrate and the phosphor substrate, the two substrates are brought into close contact with each other through a thermosetting resin, and the thermosetting resin is cured by heating at 90 ° C. for 2 hours. And a phosphor substrate were bonded together. The step of bonding the two substrates was performed in a dry air environment (water content: −80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
次に、光取り出し方向の基板に、偏光板を貼り合わせ、アクティブ駆動型有機EL素子を得た。 Next, a polarizing plate was bonded to the substrate in the light extraction direction to obtain an active drive type organic EL element.
最後に、短辺側に形成された端子を、ソースドライバを介して電源回路に接続するとともに、長辺側に形成された端子を、ゲートドライバを介して外部電源に接続することにより、80×80mmの表示部を持つアクティブ駆動型有機EL表示装置を完成した。
 ここで、外部電源により所望の電流を所望のストライプ状電極に印加することによって、青色発光有機EL素子を任意にスイッチング可能な励起光源とし、赤色蛍光体層にて青色光を赤色光に変換し、緑色蛍光体層にて青色光を緑色光に変換することにより、赤色、緑色の発光が得られるとともに、青色散乱体層を介することにより、青色発光が得られ、さらにこれらの発光プロファイルを、配光調整層によって合せることがきた。色度シフトこれにより、フルカラー表示が可能で、良好な画像、どの方向から視認しても明るさや色味に変化のない視野角特性の良好な表示が得られた。
Finally, the terminal formed on the short side is connected to the power supply circuit via the source driver, and the terminal formed on the long side is connected to the external power supply via the gate driver, thereby 80 × An active drive organic EL display device having a display portion of 80 mm was completed.
Here, by applying a desired current to a desired striped electrode from an external power source, the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer. By converting blue light into green light in the green phosphor layer, red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer. Chromaticity shift As a result, full-color display is possible, and a good image and a display with good viewing angle characteristics with no change in brightness or color even when viewed from any direction were obtained.
 また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、実施例7の有機EL表示装置において、マクベスカラー全24色をそれぞれ表示させた際の色度視野角特性を測定した。その結果、該表示装置を正面から視認した際の色度u’_正面,v’_正面の値に対する該装置を視野角60°方向から視認した際の色度u’_60°,v’_60°の値の色変化Δu’v’(=√((u’_正面-u’_60°)2+(v’_正面-v’_60°)2))が、全24色において、0.01以下であった。一般的に、該色変化Δu’v’の値が0.015前後以下になると、人間の目に色差を検知できなくなると言われている。 Further, using a commercially available luminance viewing angle measuring device (Ez-contrast: manufactured by ELDIM), in the organic EL display device of Example 7, the chromaticity viewing angle characteristics when all 24 colors of Macbeth color are displayed respectively. It was measured. As a result, the chromaticity u'_60 °, v'_60 when the display device is viewed from the direction of the viewing angle of 60 ° relative to the value of the chromaticity u′_front, v′_front when the display device is viewed from the front. The color change Δu'v '(= √ ((u'_front-u'_60 °) 2 + (v'_front-v'_60 °) 2 )) is 0. 01 or less. In general, it is said that when the value of the color change Δu′v ′ is about 0.015 or less, a color difference cannot be detected by human eyes.
「実施例8」[青色LED+蛍光体方式]
実施例6と同様にして、蛍光体基板を作製した。
“Example 8” [Blue LED + phosphor method]
A phosphor substrate was produced in the same manner as in Example 6.
TMG(トリメチルガリウム)とNHとを用い、反応容器にセットしたサファイア基板のC面に550℃でGaNよりなるバッファ層を60nmの膜厚で成長させた。次に、温度を1050℃まで上げ、TMG、NHに加えSiHガスを用い、Siドープn型GaNからなるn型コンタクト層を5μmの膜厚で成長させた。次に、原料ガスにTMA(トリメチルアルミニウム)を加え、同じく1050℃でSiドープn型Al0.3Ga0.7N層よりなる第2のクラッド層を0.2μmの膜厚で成長させた。 Using TMG (trimethylgallium) and NH 3 , a buffer layer made of GaN was grown to a thickness of 60 nm on the C surface of the sapphire substrate set in the reaction vessel at 550 ° C. Next, the temperature was raised to 1050 ° C., and an n-type contact layer made of Si-doped n-type GaN was grown to a thickness of 5 μm using SiH 4 gas in addition to TMG and NH 3 . Next, TMA (trimethylaluminum) was added to the source gas, and a second cladding layer composed of a Si-doped n-type Al 0.3 Ga 0.7 N layer was grown at a thickness of 0.2 μm at 1050 ° C. .
次に、温度を850℃に下げ、TMG、TMI(トリメチルインジウム)、NHおよびSiHを用い、Siドープn型In0.01Ga0.99Nよりなる第1のn型クラッド層を60nmの膜厚で成長させた。 Next, the temperature is lowered to 850 ° C., and the first n-type cladding layer made of Si-doped n-type In 0.01 Ga 0.99 N is made 60 nm using TMG, TMI (trimethylindium), NH 3 and SiH 4. It was made to grow with the film thickness.
次に、TMG、TMIおよびNHを用い、850℃でノンドープIn0.05Ga0.95Nからなる活性層を5nmの膜厚で成長させた。さらに、TMG、TMI、NHに加えて、新たにCPMg(シクロペンタジエニルマグネシウム)を用い、850℃でMgドープp型In0.01Ga0.99Nよりなる第1のp型クラッド層を60nmの膜厚で成長させた。
次に、温度を1100℃に上げ、TMG、TMA、NH、CPMgを用い、Mgドープp型Al0.3Ga0.7Nからなる第2のp型クラッド層を150nmの膜厚で成長させた。
Next, an active layer made of non-doped In 0.05 Ga 0.95 N was grown to a thickness of 5 nm at 850 ° C. using TMG, TMI, and NH 3 . Furthermore, in addition to TMG, TMI, and NH 3 , a first p-type cladding layer made of Mg-doped p-type In 0.01 Ga 0.99 N at 850 ° C. using CPMg (cyclopentadienyl magnesium) newly. Was grown to a thickness of 60 nm.
Next, the temperature is raised to 1100 ° C., and a second p-type cladding layer made of Mg-doped p-type Al 0.3 Ga 0.7 N is grown to a thickness of 150 nm using TMG, TMA, NH 3 , CPMg I let you.
次に、1100℃にてTMG、NHおよびCPMgを用い、Mgドープp型GaNからなるp型コンタクト層を600nmの膜厚で成長させた。
以上の操作終了後、温度を室温まで下げてウェーハを反応容器から取り出し、720℃にてウェーハのアニーリングを行い、p型層を低抵抗化した。
Next, a p-type contact layer made of Mg-doped p-type GaN was grown to a thickness of 600 nm using TMG, NH 3 and CPMg at 1100 ° C.
After the above operation was completed, the temperature was lowered to room temperature, the wafer was taken out of the reaction vessel, and the wafer was annealed at 720 ° C. to reduce the resistance of the p-type layer.
次に、最上層のp型コンタクト層の表面に所定の形状のマスクを形成し、n型コンタクト層の表面が露出するまでエッチングした。エッチング後、n型コンタクト層の表面にチタン(Ti)とアルミニウム(Al)からなる負電極、p型コンタクト層の表面に、ニッケル(Ni)と金(Au)からなる正電極を形成した。正電極形成後、ウェーハを350μm角のチップに分離した後、別に用意してある外部回路に接続するための配線が形成された基板上に、LEDチップをUV硬化樹脂で固定し、LEDチップと基板上の配線を電気的に接続し、青色LEDからなる光源基板を得た。 Next, a mask having a predetermined shape was formed on the surface of the uppermost p-type contact layer, and etching was performed until the surface of the n-type contact layer was exposed. After the etching, a negative electrode made of titanium (Ti) and aluminum (Al) was formed on the surface of the n-type contact layer, and a positive electrode made of nickel (Ni) and gold (Au) was formed on the surface of the p-type contact layer. After forming the positive electrode, after separating the wafer into 350 μm square chips, the LED chip is fixed with a UV curable resin on a substrate on which wiring for connecting to a separately prepared external circuit is formed. The wiring on the substrate was electrically connected to obtain a light source substrate made of a blue LED.
次に、以上のようにして作製した光源基板と蛍光体基板とを、画素配置位置の外側に形成されている位置合わせマーカーにより位置合わせを行った。なお、予め蛍光体基板には、熱硬化樹脂を塗布した。 Next, the light source substrate and the phosphor substrate produced as described above were aligned with an alignment marker formed outside the pixel arrangement position. A thermosetting resin was applied to the phosphor substrate in advance.
光源基板と蛍光体基板とを位置合わせした後、熱硬化樹脂を介して両基板を密着し、80℃、2時間加熱することにより、熱硬化樹脂を硬化し、有機EL素子基板と蛍光体基板を貼り合せた。なお、両基板を貼り合わせる工程は、有機層が水分により劣化することを防止するために、ドライエアー環境下(水分量:-80℃)で行った。 After aligning the light source substrate and the phosphor substrate, the two substrates are brought into close contact with each other through the thermosetting resin, and heated at 80 ° C. for 2 hours to cure the thermosetting resin, and the organic EL element substrate and the phosphor substrate. Were pasted together. The step of bonding the two substrates was performed in a dry air environment (water content: −80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
最後に、周辺に形成されている端子を外部電源に接続することにより、実施例7のLED表示装置を完成した。
 ここで、外部電源により所望の電流を所望のストライプ状電極に印加することによって、青色発光有機EL素子を任意にスイッチング可能な励起光源とし、赤色蛍光体層にて青色光を赤色光に変換し、緑色蛍光体層にて青色光を緑色光に変換することにより、赤色、緑色の発光が得られるとともに、青色散乱体層を介することにより、青色発光が得られ、さらにこれらの発光プロファイルを、配光調整層によって合せることがきた。これにより、フルカラー表示が可能で、良好な画像、どの方向から視認しても明るさや色味に変化のない視野角特性の良好な表示が得られた。
Finally, the LED display device of Example 7 was completed by connecting the terminals formed in the periphery to an external power source.
Here, by applying a desired current to a desired striped electrode from an external power source, the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer. By converting blue light into green light in the green phosphor layer, red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer. As a result, full-color display was possible, and a good image and a display with good viewing angle characteristics that did not change in brightness or color even when viewed from any direction were obtained.
 また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、実施例8の表示装置において、マクベスカラー全24色をそれぞれ表示させた際の色度視野角特性を測定した。その結果、該表示装置を正面から視認した際の色度u’_正面,v’_正面の値に対する該装置を視野角60°方向から視認した際の色度u’_60°,v’_60°の値の色変化Δu’v’(=√((u’_正面-u’_60°)2+(v’_正面-v’_60°)2))が、全24色において、0.01以下であった。一般的に、該色変化Δu’v’の値が0.015前後以下になると、人間の目に色差を検知できなくなると言われている。 In addition, using a commercially available luminance viewing angle measurement device (Ez-contrast: manufactured by ELDIM), the display device of Example 8 measured chromaticity viewing angle characteristics when all 24 colors of Macbeth color were displayed. . As a result, the chromaticity u'_60 °, v'_60 when the display device is viewed from the direction of the viewing angle of 60 ° relative to the value of the chromaticity u′_front, v′_front when the display device is viewed from the front. The color change Δu'v '(= √ ((u'_front-u'_60 °) 2 + (v'_front-v'_60 °) 2 )) is 0. 01 or less. In general, it is said that when the value of the color change Δu′v ′ is about 0.015 or less, a color difference cannot be detected by human eyes.
「実施例9」[青色有機EL+液晶+蛍光体方式]
 ガラス基板上に、スピンコート法により、膜厚1μmの低屈折率層を形成した。低屈折率層の材料としては、屈折率が1.2~1.3程度の東京応化工業社製”TPIR-414 T-3”を用いた。次に、低屈折率層上に、障壁(光散乱膜)を形成した。以下、障壁の形成方法を詳細に説明する。まず、エポキシ系樹脂(屈折率:1.59)、アクリル系樹脂(屈折率:1.49)、ルチル型酸化チタン(屈折率:2.71、粒径250nm)、光重合開始剤および芳香族系溶剤からなる白色感光性組成物を攪拌混合して、ネガ型レジストを調製した。
"Example 9" [blue organic EL + liquid crystal + phosphor method]
A low refractive index layer having a thickness of 1 μm was formed on a glass substrate by spin coating. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used. Next, a barrier (light scattering film) was formed on the low refractive index layer. Hereinafter, the method of forming the barrier will be described in detail. First, epoxy resin (refractive index: 1.59), acrylic resin (refractive index: 1.49), rutile-type titanium oxide (refractive index: 2.71, particle size 250 nm), photopolymerization initiator and aromatic A negative photosensitive resist was prepared by stirring and mixing a white photosensitive composition comprising a system solvent.
次いで、ガラス基板上に、スピンコーター法により、ネガ型レジストを塗布した。その後、80℃にて10分間プリベークして、膜厚50μmの塗膜を形成した。この塗膜に所望の画像パターンが形成できるようなマスクを被せた後、塗膜にi線(300mJ/cm)を照射し、露光した。 Next, a negative resist was applied on the glass substrate by a spin coater method. Then, it prebaked at 80 degreeC for 10 minute (s), and formed the coating film with a film thickness of 50 micrometers. After covering this coating film with a mask capable of forming a desired image pattern, the coating film was irradiated with i-line (300 mJ / cm 2 ) and exposed.
次いで、アルカリ現像液を用いて現像して、障壁が形成された画素パターン状の構造物を得た。次いで、熱風循環式乾燥炉を用い、140℃にて60分間ポストベークして、画素を仕切る障壁を形成した。 Next, development was performed using an alkaline developer to obtain a pixel pattern structure having a barrier. Next, using a hot air circulation drying oven, post-baking was performed at 140 ° C. for 60 minutes to form a barrier partitioning the pixels.
次に、障壁で囲まれた開口部内に、赤色蛍光体層、緑色蛍光体層および青色散乱体層を形成した。以下、赤色蛍光体層、緑色蛍光体層および青色散乱体層の形成方法を詳細に説明する。 Next, a red phosphor layer, a green phosphor layer, and a blue scatterer layer were formed in the opening surrounded by the barrier. Hereinafter, a method for forming the red phosphor layer, the green phosphor layer, and the blue scatterer layer will be described in detail.
赤色蛍光体層を形成するには、まず、赤色蛍光体ローダミン6G、0.01gに、10wt%のポリスチレンを溶解したジクロロベンゼン溶液100gを加え、更に屈折率1.21の粒径20nmの中空シリカを40g添加し、加熱攪拌して赤色蛍光体形成用塗液を作製した。 In order to form a red phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% polystyrene is dissolved is added to 0.01 g of red phosphor rhodamine 6G, and hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm. Was added, and the mixture was heated and stirred to prepare a red phosphor-forming coating solution.
次に、作製した赤色蛍光体形成用塗液を、ディスペンサー手法で、隔壁で区画された領域にパターン塗布した。引き続き真空オーブン(200℃、10mmHgの条件)で4時間加熱乾燥し、赤色蛍光体層を膜厚5μmでパターン形成した。 Next, the produced red phosphor-forming coating solution was applied in a pattern to regions partitioned by the partition walls by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a red phosphor layer was patterned with a film thickness of 5 μm.
 緑色蛍光体層を形成するには、まず、クマリン6、0.01gに、10wt%のポリスチレンを溶解したジクロロベンゼン溶液100gを加え、更に屈折率1.21の粒径20nmの中空シリカを40g添加し、加熱攪拌して緑色蛍光体形成用塗液を作製した。 To form a green phosphor layer, first, 100 g of a dichlorobenzene solution in which 10 wt% of polystyrene is dissolved is added to 0.01 g of coumarin, and then 40 g of hollow silica having a refractive index of 1.21 and a particle diameter of 20 nm is added. Then, the mixture was heated and stirred to produce a green phosphor forming coating solution.
 次に、作製した緑色蛍光体形成用塗液を、ディスペンサー手法で、隔壁103で区画された領域にパターン塗布した。引き続き真空オーブン(200℃、10mmHgの条件)で4時間加熱乾燥し、緑色蛍光体層を膜厚5μmでパターン形成した。 Next, the prepared green phosphor forming coating solution was applied in a pattern to the area partitioned by the partition wall 103 by a dispenser method. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours, and a green phosphor layer was patterned with a film thickness of 5 μm.
青色散乱体層を形成するには、まず、光散乱粒子を分散させるバインダーとして、帝人デュポン(株)製樹脂”LuxPrint 8155”:30gに、平均粒径4umの積水化成品工業(株)製テクポリマー“SBX-4“:3.59gと、平均粒径200nmの堺化学工業(株)製酸化チタン“R-25“:1.27gを加えて、自動乳鉢で30分間よくすり混ぜた後、プライミクス(株)製分散攪拌装置”フィルミックス40-40型”を用いて、開放系室温下にて、攪拌速度:6,000rpmで15分間プレ攪拌して、青色光散乱層形成用塗液とした。
 次に、作製した青色光散乱層形成用塗液を、ディスペンサー手法で、隔壁で区画された領域にパターン塗布した。引き続き真空オーブン(200℃、10mmHgの条件)で4時間加熱乾燥し、青色蛍散乱体層を膜厚5μmでパターン形成した。
In order to form a blue scatterer layer, first, as a binder for dispersing light scattering particles, a resin “LuxPrint 8155” manufactured by Teijin DuPont Co., Ltd .: 30 g, and Sekisui Plastics Co., Ltd. Polymer "SBX-4": 3.59 g and titanium oxide "R-25": 1.27 g manufactured by Sakai Chemical Industry Co., Ltd. with an average particle size of 200 nm are added and thoroughly mixed for 30 minutes in an automatic mortar. Using a dispersion stirrer “Filmix 40-40” manufactured by Co., Ltd., pre-stirring was performed for 15 minutes at an agitating speed of 6,000 rpm under an open system room temperature to obtain a coating solution for forming a blue light scattering layer. .
Next, the produced blue light scattering layer forming coating solution was applied in a pattern to a region partitioned by the partition wall by a dispenser technique. Subsequently, it was dried by heating in a vacuum oven (200 ° C., 10 mmHg) for 4 hours to form a blue firefly scatterer layer with a film thickness of 5 μm.
次いで、赤色蛍光体層、緑色蛍光体層および青色散乱体層の上における、励起光を入射させる側の面一面に、スピンコート法により、膜厚1μmの低屈折率層を形成した。低屈折率層の材料としては、屈折率が1.2~1.3程度の東京応化工業社製”TPIR-414 T-3”を用いた。 Next, a low refractive index layer having a thickness of 1 μm was formed on the entire surface of the red phosphor layer, the green phosphor layer, and the blue scatterer layer on the side on which the excitation light is incident by spin coating. As a material for the low refractive index layer, “TPIR-414 T-3” manufactured by Tokyo Ohka Kogyo Co., Ltd. having a refractive index of about 1.2 to 1.3 was used.
次に、低屈折率層の上の一面に、波長選択透過反射層として、酸化チタン(TiO:屈折率=2.30)と酸化シリコン(SiO:屈折率=1.47)をEB蒸着法で交互に6層成膜して作製した誘電体多層膜を、スパッタリング法により、100nmの膜厚で形成した。 Next, titanium oxide (TiO 2 : refractive index = 2.30) and silicon oxide (SiO 2 : refractive index = 1.47) are deposited on one surface of the low refractive index layer as a wavelength selective transmission / reflection layer by EB deposition. A dielectric multilayer film produced by alternately forming six layers by the method was formed to a thickness of 100 nm by a sputtering method.
次に、ガラス基板の一面(蛍光体層を形成した面と反対の面)に配光調整層を形成した。ここで、配光調整層を形成するには、まず、光散乱粒子を分散させるバインダーとして、帝人デュポン(株)製樹脂”LuxPrint 8155”:30gに、平均粒径4umの積水化成品工業(株)製テクポリマー“SBX-4“:3.59gと、平均粒径290nmの堺化学工業(株)製酸化チタン“R-42“:0.63gを加えて、自動乳鉢で30分間よくすり混ぜた後、プライミクス(株)製分散攪拌装置”フィルミックス40-40型”を用いて、開放系室温下にて、攪拌速度:6,000rpmで15分間プレ攪拌した。 Next, a light distribution adjusting layer was formed on one surface of the glass substrate (the surface opposite to the surface on which the phosphor layer was formed). Here, in order to form the light distribution adjusting layer, first, as a binder for dispersing the light scattering particles, Sekisui Plastics Co., Ltd. having an average particle diameter of 4 μm on Teijin DuPont's resin “LuxPrint 8155”: 30 g. ) Techpolymer “SBX-4”: 3.59 g and titanium oxide “R-42”: 0.63 g manufactured by Sakai Chemical Industry Co., Ltd. with an average particle size of 290 nm were added and thoroughly mixed for 30 minutes in an automatic mortar. Thereafter, the mixture was pre-stirred for 15 minutes at a stirring speed of 6,000 rpm under an open system room temperature using a dispersion stirring apparatus “Filmix 40-40 type” manufactured by Primix Co., Ltd.
次いで、ガラス基板の一面に対して、市販のスピンコーターを用いて、膜厚5umの配光調整層を形成した。 Next, a 5 μm thick light distribution adjusting layer was formed on one surface of the glass substrate using a commercially available spin coater.
次に、波長選択透過反射層上に、スピンコート法により、アクリル系樹脂を用いて平坦化膜を形成し、その平坦化膜上に、従来の方法により、偏光フィルム、透明電極および配光膜を形成し、ガラス基板と、その一面に形成された蛍光体層と、その反対の一面に形成された配光調整層と、蛍光体層の側面に形成された障壁と、蛍光体層の励起光入射面側の一面に形成された波長選択透過反射層からなる実施例9の蛍光体基板を得た。 Next, a flattening film is formed on the wavelength selective transmission / reflection layer by spin coating using an acrylic resin, and a polarizing film, a transparent electrode, and a light distribution film are formed on the flattening film by a conventional method. A glass substrate, a phosphor layer formed on one surface thereof, a light distribution adjusting layer formed on the opposite surface, a barrier formed on a side surface of the phosphor layer, and excitation of the phosphor layer A phosphor substrate of Example 9 comprising a wavelength selective transmission / reflection layer formed on one surface of the light incident surface side was obtained.
次に、ガラス基板上に、従来の方法により、TFTからなるスイッチング素子を形成した。次に、上記のTFTとコンタクトホールを介して、電気的に接触するように、膜厚100nmのITO透明電極を形成した。 Next, a switching element made of TFT was formed on the glass substrate by a conventional method. Next, an ITO transparent electrode having a film thickness of 100 nm was formed so as to be in electrical contact with the TFT through the contact hole.
次に、予め作製してある有機EL部の画素と同一のピッチになるように、通常のフォトリソグラフィー法により、透明電極をパターニングした。
次に、配向膜を印刷法によって形成した。
Next, the transparent electrode was patterned by a normal photolithography method so as to have the same pitch as the pixels of the organic EL portion that had been prepared in advance.
Next, an alignment film was formed by a printing method.
次に、TFTが形成された基板と蛍光体基板とを、厚さ10μmのスペーサーを介して、接着し、両基板間に、TNモードの液晶材料を注入し、液晶・蛍光体部を完成した。 Next, the substrate on which the TFT is formed and the phosphor substrate are bonded via a spacer having a thickness of 10 μm, and a TN mode liquid crystal material is injected between both substrates to complete the liquid crystal / phosphor portion. .
一方、厚さ0.7mmのガラス基板上に、スパッタリング法により、銀からなる膜厚100nmの反射電極を成膜し、その反射電極上に、スパッタリング法により、膜厚20nmの透インジウム-スズ酸化物(ITO)を成膜することによって、第一電極(陽極)を形成した。
その後、従来のフォトリソグラフィー法により、第一電極の幅が所望の大きさとなるようにパターニングした。
On the other hand, a reflective electrode having a thickness of 100 nm made of silver is formed on a glass substrate having a thickness of 0.7 mm by a sputtering method, and a 20 nm-thick indium-tin oxide film is formed on the reflective electrode by a sputtering method. A first electrode (anode) was formed by depositing an object (ITO).
Then, it patterned so that the width | variety of a 1st electrode might become a desired magnitude | size by the conventional photolithographic method.
次に、第一電極上に、スパッタリング法により、SiOを200nm積層し、従来のフォトリソグラフィー法により、第一電極のエッジ部のみを覆うようにパターン化した。ここでは、第一電極の端から10μm分だけ短辺をSiOで覆う構造とした。これを、水洗後、純水超音波洗浄10分、アセトン超音波洗浄10分、イソプロピルアルコール蒸気洗浄5分を行い、120℃にて1時間乾燥させた。 Next, 200 nm of SiO 2 was laminated on the first electrode by sputtering, and patterned to cover only the edge portion of the first electrode by conventional photolithography. Here, a short side of 10 μm from the end of the first electrode is covered with SiO 2 . This was washed with water, subjected to pure water ultrasonic cleaning for 10 minutes, acetone ultrasonic cleaning for 10 minutes, and isopropyl alcohol vapor cleaning for 5 minutes, and dried at 120 ° C. for 1 hour.
次に、第一電極を形成した基板を、インライン型抵抗加熱蒸着装置内の基板ホルダーに固定し、1×10-4Pa以下の真空まで減圧し、有機発光層を含む有機EL層を構成する各層を形成した。以下、有機EL層を構成する各層の形成方法を詳細に説明する。まず、正孔注入材料として、1,1-ビス-ジ-4-トリルアミノ-フェニル-シクロヘキサン(TAPC)を用い、抵抗加熱蒸着法により膜厚100nmの正孔注入層を形成した。 Next, the substrate on which the first electrode is formed is fixed to a substrate holder in an in-line type resistance heating vapor deposition apparatus, and the pressure is reduced to a vacuum of 1 × 10 −4 Pa or less to form an organic EL layer including an organic light emitting layer. Each layer was formed. Hereinafter, the formation method of each layer which comprises an organic EL layer is demonstrated in detail. First, 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used as a hole injection material, and a hole injection layer having a thickness of 100 nm was formed by resistance heating vapor deposition.
次に、正孔輸送材料として、カルバゾールビフェニル(CBP)を用い、抵抗加熱蒸着法により膜厚10nmの正孔輸送層を形成した。次に、正孔輸送層上の所望の画素位置に、近紫外有機発光層(厚さ:30nm)を形成した。この近紫外有機発光層は、3,5-ビス(4-t-ブチル-フェニル)-4-フェニル-[1,2,4]トリアゾール(TAZ)(近紫外燐光発光材料)を、蒸着速度1.5Å/secで蒸着することによって形成した。 Next, carbazole biphenyl (CBP) was used as a hole transport material, and a 10 nm-thick hole transport layer was formed by resistance heating vapor deposition. Next, a near ultraviolet organic light emitting layer (thickness: 30 nm) was formed at a desired pixel position on the hole transport layer. This near-ultraviolet organic light-emitting layer is formed by depositing 3,5-bis (4-tert-butyl-phenyl) -4-phenyl- [1,2,4] triazole (TAZ) (near-ultraviolet phosphorescent material) at a deposition rate of 1 It was formed by vapor deposition at a rate of 5 cm / sec.
次に、有機発光層の上に、2,9-ジメチル-4,7-ジフェニル-1,10-フェナントロリン(BCP)を用いて、正孔防止層(厚さ:20nm)を形成した。次に、正孔防止層上に、トリス(8-ヒドロキシキノリン)アルミニウム(Alq)を用いて電子輸送層(厚さ:30nm)を形成した。
次に、電子輸送層上に、フッ化リチウム(LiF)を用いて電子注入層(厚さ:0.5nm)を形成した。
以上の処理によって、有機EL層を構成する各層を形成した。
Next, a hole blocking layer (thickness: 20 nm) was formed on the organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). Next, an electron transport layer (thickness: 30 nm) was formed on the hole blocking layer using tris (8-hydroxyquinoline) aluminum (Alq 3 ).
Next, an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
Through the above processing, each layer constituting the organic EL layer was formed.
この後、第二電極として半透明電極を形成した。
まず、基板を金属蒸着用チャンバーに固定、半透明電極形成用のシャドーマスクと基板をアライメントした。なお、シャドーマスクとしては、第一電極のストライプと対向する向きに、500μm幅、600μmピッチのストライプ状に第二電極を形成できるように開口部が設けられたマスクを用いた。
Thereafter, a semitransparent electrode was formed as the second electrode.
First, the substrate was fixed to a metal deposition chamber, and the shadow mask for forming the translucent electrode was aligned with the substrate. As the shadow mask, a mask provided with an opening so that the second electrode can be formed in a stripe shape having a width of 500 μm and a pitch of 600 μm in a direction facing the stripe of the first electrode.
次いで、電子注入層の表面に、真空蒸着法により、マグネシウムと銀とを、それぞれ蒸着速度0.1Å/sec、0.9Å/secで共蒸着することによって、マグネシウム銀を所望のパターンで形成(厚さ:1nm)した。
さらに、その上に、干渉効果を強調する目的、および、第二電極での配線抵抗による電圧降下を防止する目的で、銀を1Å/secの蒸着速度で所望のパターンで形成(厚さ:19nm)した。
以上の処理によって、半透明電極を形成した。
Next, magnesium and silver are co-deposited on the surface of the electron injection layer by vacuum deposition at a deposition rate of 0.1 Å / sec and 0.9 Å / sec, respectively, thereby forming magnesium silver in a desired pattern ( (Thickness: 1 nm).
Furthermore, silver is formed in a desired pattern at a deposition rate of 1 mm / sec (thickness: 19 nm) for the purpose of emphasizing the interference effect and preventing voltage drop due to wiring resistance at the second electrode. )did.
A semitransparent electrode was formed by the above treatment.
第一電極と第二電極の間では、マイクロキャビティ効果(干渉効果)が発現し、正面輝度を高めることが可能となる。これにより、有機EL層からの発光エネルギーを効率よく光取出部側に伝搬させることができる。また、同様にマイクロキャビティ効果により、発光ピークを370nm、半値幅を30nmに調整した。 A microcavity effect (interference effect) appears between the first electrode and the second electrode, and the front luminance can be increased. Thereby, the light emission energy from an organic EL layer can be efficiently propagated to the light extraction part side. Similarly, the emission peak was adjusted to 370 nm and the half-value width to 30 nm by the microcavity effect.
次に、プラズマCVD法により、シャドーマスクを用いて表示部の端から上下左右2mmの封止エリアまで、厚さ3μmのSiOからなる無機保護層をパターニング形成した。
以上の処理によって、有機EL素子が形成された有機EL素子基板を得た。
Next, an inorganic protective layer made of SiO 2 having a thickness of 3 μm was formed by patterning by plasma CVD using a shadow mask from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions.
By the above process, an organic EL element substrate on which an organic EL element was formed was obtained.
以上のようにして作製した有機EL素子基板と蛍光体基板とを、画素配置位置の外側に形成されている位置合わせマーカーにより位置合わせを行った。なお、予め蛍光体基板には、熱硬化樹脂を塗布した。 The organic EL element substrate and the phosphor substrate produced as described above were aligned using an alignment marker formed outside the pixel arrangement position. A thermosetting resin was applied to the phosphor substrate in advance.
有機EL素子基板と蛍光体基板を位置合わせした後、熱硬化樹脂を介して両基板を密着し、80℃、2時間加熱することにより、熱硬化樹脂を硬化し、有機EL素子基板と蛍光体基板を貼り合せた。なお、両基板を貼り合わせる工程は、有機層が水分により劣化することを防止するために、ドライエアー環境下(水分量:-80℃)で行った。 After aligning the organic EL element substrate and the phosphor substrate, the two substrates are brought into close contact with each other through a thermosetting resin, and heated at 80 ° C. for 2 hours to cure the thermosetting resin, and the organic EL element substrate and the phosphor The substrates were bonded together. The step of bonding the two substrates was performed in a dry air environment (water content: −80 ° C.) in order to prevent the organic layer from being deteriorated by moisture.
最後に、周辺に形成されている端子を外部電源に接続することにより、実施例8の有機EL表示装置を完成した。
 ここで、外部電源により所望の電流を所望のストライプ状電極に印加することによって、青色発光有機EL素子を任意にスイッチング可能な励起光源とし、赤色蛍光体層にて青色光を赤色光に変換し、緑色蛍光体層にて青色光を緑色光に変換することにより、赤色、緑色の発光が得られるとともに、青色散乱体層を介することにより、青色発光が得られ、さらにこれらの発光プロファイルを、配光調整層によって合せることがきた。これにより、フルカラー表示が可能で、良好な画像、どの方向から視認しても明るさや色味に変化のない視野角特性の良好な表示が得られた。
Finally, an organic EL display device of Example 8 was completed by connecting terminals formed in the periphery to an external power source.
Here, by applying a desired current to a desired striped electrode from an external power source, the blue light-emitting organic EL element is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red light by a red phosphor layer. By converting blue light into green light in the green phosphor layer, red and green light emission can be obtained, and blue light emission can be obtained through the blue scatterer layer. It can be matched by the light distribution adjustment layer. As a result, full-color display was possible, and a good image and a display with good viewing angle characteristics that did not change in brightness or color even when viewed from any direction were obtained.
 また、市販の輝度視野角測定装置(Ez-contrast:ELDIM社製)を用いて、実施例9の表示装置において、マクベスカラー全24色をそれぞれ表示させた際の色度視野角特性を測定した。その結果、該表示装置を正面から視認した際の色度u’_正面,v’_正面の値に対する該装置を視野角60°方向から視認した際の色度u’_60°,v’_60°の値の色変化Δu’v’(=√((u’_正面-u’_60°)2+(v’_正面-v’_60°)))が、全24色において、0.01以下であった。一般的に、該色変化Δu’v’の値が0.015前後以下になると、人間の目に色差を検知できなくなると言われている。 In addition, using a commercially available luminance viewing angle measurement device (Ez-contrast: manufactured by ELDIM), the display device of Example 9 measured chromaticity viewing angle characteristics when all 24 colors of Macbeth color were displayed. . As a result, the chromaticity u′_60 °, v′_60 when the device is viewed from the direction of the viewing angle of 60 ° with respect to the values of the chromaticity u′_front and v′_front when the display device is viewed from the front. The color change Δu′v ′ (= √ ((u′_front−u′_60 °) 2+ (v′_front−v′_60 °) 2 ))) is 0.01 for all 24 colors. It was the following. Generally, it is said that the color difference cannot be detected by human eyes when the value of the color change Δu′v ′ is about 0.015 or less.
「実施例10」[青色バックライト+液晶+蛍光体方式]
実施例9と同様にして、液晶・蛍光体基板部を形成した。
“Example 10” [blue backlight + liquid crystal + phosphor method]
In the same manner as in Example 9, a liquid crystal / phosphor substrate portion was formed.
次に、液晶・蛍光体基板の液晶側に指向性青色バックライトを組み合わせた。 Next, a directional blue backlight was combined on the liquid crystal side of the liquid crystal / phosphor substrate.
指向性青色バックライトは、光源、導光板、反射シート、輝度向上フィルム、集光型レンズから構成されているものを使用した。光源としては、465nmをピーク波長に持つ日亜化学工業社製LED”NFSC036C”を用い、導光板の側面に配置した。導光板としては、ポリカーボネート樹脂を射出成形により楔形状に形成したものを使用した。(LEDは、楔形導光板の断面積の大きい側に設けた)導光板の底面には、スリーエム社製反射シート”ESR”を用いた。導光板の上面側(出射面側)には、スリーエム社製輝度向上フィルム”DBEFD400”、日本特殊光学樹脂社製集光型フレネルレンズ”CF3-0.1”をこの順に搭載し、所望の指向性青色バックライトを完成した。 As the directional blue backlight, a light source, a light guide plate, a reflection sheet, a brightness enhancement film, and a condensing lens were used. As a light source, an LED “NFSC036C” manufactured by Nichia Corporation having a peak wavelength of 465 nm was used and arranged on the side surface of the light guide plate. As the light guide plate, a polycarbonate resin formed into a wedge shape by injection molding was used. A reflective sheet “ESR” manufactured by 3M was used for the bottom surface of the light guide plate (the LED was provided on the side of the wedge-shaped light guide plate having the larger cross-sectional area). The brightness enhancement film “DBEFD400” manufactured by 3M Co., Ltd. and the condensing Fresnel lens “CF3-0.1” manufactured by Nippon Special Optical Resin Co., Ltd. are mounted in this order on the upper surface side (outgoing surface side) of the light guide plate. Completed the backlight.
最後に、周辺に形成されている端子を外部電源に接続することにより、実施例10の液晶表示装置を完成した。ここで、外部電源により所望の電流を所望のストライプ状電極に印加することによって、指向性青色バックライトからの出射光を任意にスイッチング可能な励起光源とし、赤色蛍光体膜にて青色光を赤色光に変換し、緑色蛍光体膜にて青色光を緑色光に変換することにより、赤色、緑色の等方発光が得られるとともに、青色散乱体膜を介することにより、等方的な青色発光が得られた。さらに、蛍光体層と散乱体層上に設けた配光調整層によって、どの方向から視認しても明るさの変わらない、尚且つどの方向から視認しても色味の変わらない表示が得られた。これにより、フルカラー表示が可能で、良好な画像、視野角特性のよい画像を得ることができた。 Finally, the terminal formed in the periphery was connected to an external power source to complete the liquid crystal display device of Example 10. Here, by applying a desired current to a desired stripe-shaped electrode from an external power source, the emitted light from the directional blue backlight is used as an excitation light source that can be arbitrarily switched, and blue light is converted into red by a red phosphor film. By converting blue light into green light with the green phosphor film, isotropic light emission of red and green is obtained, and isotropic blue light emission is achieved through the blue scatterer film. Obtained. Furthermore, the light distribution adjustment layer provided on the phosphor layer and the scatterer layer provides a display that does not change in brightness when viewed from any direction and does not change color when viewed from any direction. It was. Thereby, full color display was possible, and a good image and an image with good viewing angle characteristics could be obtained.
  本発明は、蛍光体基板、この蛍光体基板を用いた各種の発光デバイス、表示装置、および照明装置に利用可能である。 The present invention can be used for a phosphor substrate, various light emitting devices using the phosphor substrate, a display device, and a lighting device.

Claims (36)

  1.  励起光によって励起され、蛍光を発する蛍光体層が一面側に形成された基板と、少なくとも前記蛍光体層から出射される蛍光の発光方向を変える配光調整層が形成されていることを特徴とする蛍光体基板。 A substrate on which a phosphor layer that is excited by excitation light and emits fluorescence is formed on one side, and a light distribution adjustment layer that changes at least the emission direction of fluorescence emitted from the phosphor layer is formed. Phosphor substrate.
  2.  前記配光調整層が、少なくとも1つ以上の粒子を混合した透光性樹脂を含む光散乱材料で構成されていることを特徴とする請求項1に記載の蛍光体基板。 2. The phosphor substrate according to claim 1, wherein the light distribution adjusting layer is made of a light scattering material containing a translucent resin in which at least one particle is mixed.
  3.  請求項1または2に記載の蛍光体基板と、前記励起光を発する励起光源とを備えたことを特徴とする発光デバイス。 A light emitting device comprising the phosphor substrate according to claim 1 and an excitation light source that emits the excitation light.
  4.  前記配光調整層は、前記基板と前記蛍光体層の間に配されていることを特徴とする請求項3項に記載の発光デバイス。 The light-emitting device according to claim 3, wherein the light distribution adjustment layer is disposed between the substrate and the phosphor layer.
  5.  前記配光調整層は、前記基板における前記励起光の入射面と対面する出射面から、前記出射面と垂直な法線方向である視野角0°方向の輝度値L1と、視野角0°よりも大きい視野角の輝度値L2との関係が、少なくともL1≧L2を満たすように蛍光を出射させることを特徴とする請求項3または4に記載の発光デバイス。 The light distribution adjusting layer has a luminance value L1 in a direction of a viewing angle of 0 ° that is a normal direction perpendicular to the emitting surface and a viewing angle of 0 ° from the emitting surface facing the incident surface of the excitation light on the substrate. 5. The light emitting device according to claim 3, wherein fluorescence is emitted so that a relationship with a luminance value L <b> 2 having a larger viewing angle satisfies at least L <b> 1 ≧ L <b> 2.
  6.   前記配光調整層は、前記輝度値L1と前記輝度値L2との関係がL2/L1≧0.8を満たすように蛍光を出射させることを特徴とする請求項5に記載の発光デバイス。 The light-emitting device according to claim 5, wherein the light distribution adjusting layer emits fluorescence so that a relationship between the luminance value L1 and the luminance value L2 satisfies L2 / L1 ≧ 0.8.
  7.   前記配光調整層は、前記輝度値L1と、前記視野角が60°方向の輝度値L3との関係が少なくともL3/L1≧0.8を満たすように蛍光を出射させることを特徴とする請求項6に記載の発光デバイス。 The light distribution adjustment layer emits fluorescence so that the relationship between the luminance value L1 and the luminance value L3 in the direction of the viewing angle of 60 ° satisfies at least L3 / L1 ≧ 0.8. Item 7. The light emitting device according to Item 6.
  8.   前記蛍光体層の厚み方向に沿った少なくとも1つ以上の側面に光反射性の障壁が形成されていることを特徴とする請求項3ないし7のいずれか1項に記載の発光デバイス。 The light emitting device according to any one of claims 3 to 7, wherein a light reflective barrier is formed on at least one side surface along the thickness direction of the phosphor layer.
  9.   前記蛍光体層における前記励起光の入射面側には、前記励起光の波長範囲のうちピーク波長域の励起光を少なくとも透過し、かつ前記蛍光体層から発した前記蛍光の波長範囲のうちピーク波長域の蛍光を少なくとも反射させる波長選択層が形成されていることを特徴とする請求項3ないし8のいずれか1項に記載の発光デバイス。 The excitation light incident surface side of the phosphor layer transmits at least excitation light in a peak wavelength region of the excitation light wavelength range, and peaks in the fluorescence wavelength range emitted from the phosphor layer. The light emitting device according to any one of claims 3 to 8, wherein a wavelength selection layer that reflects at least fluorescence in a wavelength region is formed.
  10.  前記蛍光体層と前記波長選択層との間に、前記蛍光体層よりも屈折率が小さい低屈折率層が配されていることを特徴とする請求項9に記載の発光デバイス。 The light emitting device according to claim 9, wherein a low refractive index layer having a refractive index smaller than that of the phosphor layer is disposed between the phosphor layer and the wavelength selection layer.
  11.  前記低屈折率層は、前記配光調整層と前記蛍光体層との間にも更に配されていることを特徴とする請求項10に記載の発光デバイス。 The light-emitting device according to claim 10, wherein the low refractive index layer is further disposed between the light distribution adjusting layer and the phosphor layer.
  12.  前記低屈折率層の屈折率は、1~1.5の範囲であることを特徴とする請求項10または11に記載の発光デバイス。 The light emitting device according to claim 10 or 11, wherein the refractive index of the low refractive index layer is in the range of 1 to 1.5.
  13.  前記低屈折率層は、気体から構成されることを特徴とする請求項12項に記載の発光デバイス。 The light-emitting device according to claim 12, wherein the low refractive index layer is made of a gas.
  14.  前記蛍光体層は、前記基板の一面に複数並べて配列されていることを特徴とする請求項3ないし13のいずれか1項に記載の発光デバイス。 14. The light emitting device according to claim 3, wherein a plurality of the phosphor layers are arranged side by side on one surface of the substrate.
  15.  前記配光調整層は、複数の前記蛍光体層のそれぞれに対応するように複数並べて配列されていることを特徴とする請求項14に記載の発光デバイス。 The light emitting device according to claim 14, wherein a plurality of the light distribution adjustment layers are arranged side by side so as to correspond to each of the plurality of phosphor layers.
  16.   互いに隣接する前記蛍光体層どうしの間に光吸収層を更に配したことを特徴とする請求項14または15に記載の発光デバイス。 16. The light emitting device according to claim 14 or 15, wherein a light absorption layer is further disposed between the phosphor layers adjacent to each other.
  17.   前記光吸収層は、互いに隣接する前記配光調整層どうしの間にも更に配されていることを特徴とする請求項16に記載の発光デバイス。 The light-emitting device according to claim 16, wherein the light absorption layer is further disposed between the light distribution adjustment layers adjacent to each other.
  18.  前記光吸収層は、前記障壁の厚み方向に垂直に広がる上面、或いは下面の少なくとも一方に形成されていることを特徴とする請求項14ないし17のいずれか1項に記載の発光デバイス。 The light-emitting device according to any one of claims 14 to 17, wherein the light absorption layer is formed on at least one of an upper surface and a lower surface extending perpendicularly to a thickness direction of the barrier.
  19.   前記障壁の少なくとも前記蛍光体層と接する部分が光散乱性を有することを特徴とする請求項14ないし18のいずれか1項に記載の発光デバイス。 The light-emitting device according to claim 14, wherein at least a portion of the barrier that is in contact with the phosphor layer has light scattering properties.
  20.  前記障壁の少なくとも前記蛍光体層と接する部分が凹凸形状を成すことを特徴とする請求項14ないし19のいずれか1項に記載の発光デバイス。 The light-emitting device according to any one of claims 14 to 19, wherein at least a portion of the barrier in contact with the phosphor layer has an uneven shape.
  21.  前記配光調整層は、前記基板における前記励起光の入射面と対面する出射面に沿って広がることを特徴とする請求項14ないし20のいずれか1項に記載の発光デバイス。 21. The light-emitting device according to claim 14, wherein the light distribution adjustment layer extends along an emission surface of the substrate that faces the incident surface of the excitation light.
  22.   請求項3ないし21のいずれか1項に記載の発光デバイスを備えたことを特徴とする表示装置。 A display device comprising the light-emitting device according to any one of claims 3 to 21.
  23.   前記励起光源は紫外線波長域の励起光を出射し、
      前記蛍光体層は、前記紫外線波長域の励起光によって赤色光を発する赤色画素を構成する赤色蛍光体層と、前記紫外線波長域の励起光によって緑色光を発する緑色画素を構成する緑色蛍光体層と、前記紫外線波長域の励起光によって青色光を発する青色画素を構成する青色蛍光体層と、を少なくとも備えたことを特徴とする請求項22に記載の表示装置。
    The excitation light source emits excitation light in the ultraviolet wavelength region,
    The phosphor layer comprises a red phosphor layer that constitutes a red pixel that emits red light by excitation light in the ultraviolet wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by excitation light in the ultraviolet wavelength region 23. The display device according to claim 22, further comprising at least a blue phosphor layer that forms a blue pixel that emits blue light by excitation light in the ultraviolet wavelength region.
  24.   前記励起光源は青色波長域の励起光を出射し、
      前記蛍光体層は、前記青色波長域の励起光によって赤色光を発する赤色画素を構成する赤色蛍光体層と、前記青色波長域の励起光によって緑色光を発する緑色画素を構成する緑色蛍光体層と、を少なくとも備え、また前記青色波長域の励起光を散乱させる青色画素を構成する青色散乱体層を備えたことを特徴とする請求項22に記載の表示装置。
    The excitation light source emits excitation light in a blue wavelength region,
    The phosphor layer includes a red phosphor layer that constitutes a red pixel that emits red light by the excitation light in the blue wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by the excitation light in the blue wavelength region. The display device according to claim 22, further comprising: a blue scatterer layer that constitutes a blue pixel that scatters excitation light in the blue wavelength region.
  25.   前記青色散乱体層と、前記配光調整層とを一体に形成したことを特徴とする請求項24に記載の表示装置。 25. The display device according to claim 24, wherein the blue scatterer layer and the light distribution adjustment layer are integrally formed.
  26.   前記励起光源は青色波長域の励起光を出射し、
      前記蛍光体層は、前記青色波長域の励起光によって赤色光を発する赤色画素を構成する赤色蛍光体層と、前記青色波長域の励起光によって緑色光を発する緑色画素を構成する緑色蛍光体層と、前記青色波長域の励起光によって青色光を発する青色画素を構成する青色蛍光体層と、を少なくとも備えたことを特徴とする請求項22に記載の表示装置。
    The excitation light source emits excitation light in a blue wavelength region,
    The phosphor layer includes a red phosphor layer that constitutes a red pixel that emits red light by the excitation light in the blue wavelength region, and a green phosphor layer that constitutes a green pixel that emits green light by the excitation light in the blue wavelength region. 23. The display device according to claim 22, further comprising at least a blue phosphor layer that constitutes a blue pixel that emits blue light by excitation light in the blue wavelength region.
  27.   前記励起光源に対応するアクティブマトリックス駆動素子を配置したことを特徴とする請求項22ないし26のいずれか1項に記載の表示装置。 27. The display device according to claim 22, wherein an active matrix driving element corresponding to the excitation light source is disposed.
  28. 前記励起光源は、発光ダイオード、有機エレクトロルミネセンス素子、無機エレクトロルミネセンス素子のいずれかから構成されることを特徴とする請求項22ないし27のいずれか1項に記載の表示装置。 The display device according to any one of claims 22 to 27, wherein the excitation light source includes any one of a light emitting diode, an organic electroluminescence element, and an inorganic electroluminescence element.
  29.   前記励起光源は面状光源を成し、前記励起光源と前記基板との間に、前記励起光の透過率を制御可能な液晶素子を形成したことを特徴とする請求項22ないし28のいずれか1項に記載の表示装置。 29. The liquid crystal device according to claim 22, wherein the excitation light source is a planar light source, and a liquid crystal element capable of controlling the transmittance of the excitation light is formed between the excitation light source and the substrate. Item 1. A display device according to item 1.
  30.   前記励起光源から出射される励起光は、指向性を有していることを特徴とする請求項22ないし29のいずれか1項に記載の表示装置。 The display device according to any one of claims 22 to 29, wherein the excitation light emitted from the excitation light source has directivity.
  31.   前記励起光源と前記基板との間に、波長435nm以上480nm以下における消光比が10000以上となる偏光板を設けたことを特徴とする請求項22ないし30のいずれか1項に記載の表示装置。 31. The display device according to claim 22, wherein a polarizing plate having an extinction ratio of 10,000 or more at a wavelength of 435 nm or more and 480 nm or less is provided between the excitation light source and the substrate.
  32.   前記蛍光体層と前記配光調整層の間、或いは、前記配光調整層と前記基板との間の少なくとも一方にカラーフィルターを設けたことを特徴とする請求項22ないし31のいずれか1項に記載の表示装置。 32. A color filter is provided between at least one of the phosphor layer and the light distribution adjustment layer, or at least one of the light distribution adjustment layer and the substrate. The display device described in 1.
  33.   光出射面から出射される光の正面方向における色度u’,v’の値に対する、全方位の色度u’,v’の値の色変化Δu’v’が0.01以下であることを特徴とする請求項22ないし32のいずれか1項に記載の表示装置。 The color change Δu′v ′ of the omnidirectional chromaticity u ′, v ′ with respect to the value of the chromaticity u ′, v ′ in the front direction of the light emitted from the light emitting surface is 0.01 or less. The display device according to any one of claims 22 to 32.
  34.   前記配光調整層、或いは、前記基板に重ねて、外光の反射を防止する外光反射防止層を設けたことを特徴とする請求項22ないし33のいずれか1項に記載の表示装置。 34. The display device according to any one of claims 22 to 33, wherein an external light antireflection layer for preventing reflection of external light is provided on the light distribution adjustment layer or the substrate.
  35.   前記外光反射防止層の屈折率は、厚み方向に沿って漸増または漸減する屈折率勾配を有することを特徴とする請求項34に記載の表示装置。 The display device according to claim 34, wherein the refractive index of the external light antireflection layer has a refractive index gradient that gradually increases or decreases along the thickness direction.
  36.   請求項3ないし21のいずれか1項に記載の発光デバイスを備えたことを特徴とする照明装置。 A lighting device comprising the light-emitting device according to any one of claims 3 to 21.
PCT/JP2013/065789 2012-06-07 2013-06-07 Fluorescent substrate, light-emitting device, display device, and lighting device WO2013183751A1 (en)

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