WO2012114909A1 - 薄膜の表面検査方法および検査装置 - Google Patents
薄膜の表面検査方法および検査装置 Download PDFInfo
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- WO2012114909A1 WO2012114909A1 PCT/JP2012/053130 JP2012053130W WO2012114909A1 WO 2012114909 A1 WO2012114909 A1 WO 2012114909A1 JP 2012053130 W JP2012053130 W JP 2012053130W WO 2012114909 A1 WO2012114909 A1 WO 2012114909A1
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- thin film
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- image data
- data
- unevenness
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- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000007689 inspection Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005224 laser annealing Methods 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims description 21
- 230000009466 transformation Effects 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Definitions
- the present invention relates to a technique for inspecting unevenness generated on the surface of a thin film in a laser annealing process or the like in a polysilicon thin film manufacturing process.
- the technique of crystallizing an amorphous silicon film by irradiating a laser to form a polysilicon film is an important position in the flat panel display (FPD) manufacturing process, and is uniform and uniform to improve the quality of the substrate. It is necessary to irradiate the substrate with a laser. However, variations in laser energy and scratches or fogging of the optical system may cause shot unevenness in the laser shape direction and scan unevenness in the laser scanning direction, which cause defective products in subsequent processes. Therefore, the inspection for uneven irradiation on the substrate surface is indispensable.
- Patent Document 1 As a conventional state inspection / evaluation of the polysilicon film after the annealing treatment, there is a laser crystal silicon inspection method (Patent Document 1). The object is to determine the state of the surface by obliquely applying a light source to the annealed substrate. Specifically, the inspection light is irradiated with the angle of the light source optimized, and it can be concluded whether the laser energy is appropriate or inappropriate depending on whether or not a stripe pattern appears due to the intensity change of the green reflected light.
- the laser crystal silicon inspection method described above describes a method in which the state of the substrate surface after the annealing treatment can be observed by optimizing the angle of the light source, but an image projected on the camera as a stripe pattern of stripes is displayed. Judgment is abstract. In an automatic machine, it is important to digitize this unevenness, and it is possible to judge pass / fail by digitizing, but the above method lacks the concreteness of pass / fail judgment, and automation is not possible. difficult. Moreover, in the above conventional method, it is shown that the substrate surface appears green when irradiated with white light. However, depending on the angle of the light source and the state of the substrate surface, it may appear blue or yellow. As described above, when the green reflected light is assumed, it may be difficult to make an appropriate determination.
- the present invention has been made against the background of the above circumstances, and is a thin film surface inspection method and inspection capable of easily quantifying and determining the state of unevenness of the surface of a substrate regardless of the reflection color of the surface.
- An object is to provide an apparatus.
- the surface inspection method of the thin film of the present invention irradiates the thin film surface subjected to laser annealing treatment with inspection light, receives the reflected light reflected by the thin film surface by the irradiation, and acquires a color image, Detecting color components of the color image, converting the color image to monochrome based on the detected color components, convolution of the monochrome image data to obtain image data in which the image density is enhanced, and obtaining the image density
- the image data with emphasis on the projection is subjected to projective transformation, and the surface unevenness of the thin film is determined based on the image data subjected to the projective transformation.
- the thin film surface inspection apparatus of the present invention includes an inspection light irradiating unit that irradiates inspection light onto a thin film that has been annealed by laser light irradiation, and a reflected light receiving unit that receives reflected light reflected by the thin film.
- An image processing unit that receives image information output from the light receiving unit, and a determination unit that determines unevenness of the thin film surface based on image data processed by the image processing unit,
- the image processing unit performs the monochrome processing, convolution processing, and projective transformation of the present invention on the image information,
- the determination unit performs the determination of the present invention.
- a thin film that has been laser-annealed is an inspection target.
- the thin film is not particularly limited as long as it is annealed by laser irradiation.
- the thin film is crystallized by laser annealing an amorphous (particularly amorphous silicon) thin film. Can be targeted.
- the inspection light irradiation is not limited to a specific wavelength, but preferably white light can be used.
- Various light sources can be used for the inspection light irradiating section for irradiating the inspection light, and the present invention is not limited to a specific one.
- the reflected light that is reflected when the inspection light is irradiated onto the thin film is received by the reflected light receiving unit.
- the reflected light receiving unit is not particularly limited as long as it receives reflected light as a color image and outputs image information, and an appropriate light receiving unit such as a CCD can be used.
- a color image is acquired at the reflected light receiving unit.
- a color component is detected by image processing.
- color component detection for example, R, G, and B color components are detected.
- the image is converted into a monochrome image using the detected color components.
- monochrome conversion for example, a color component having a relatively large light distribution is extracted and converted into monochrome according to the light intensity.
- Monochrome image data is subjected to processing for enhancing the density of the image by convolution.
- the convolution can be performed by multiplying the image data indicated by the matrix by a matrix of predetermined coefficients.
- the number of rows of the predetermined coefficient can be selected as appropriate, and the present invention is not limited to a specific one.
- a matrix for emphasizing the row direction and a matrix for emphasizing the column direction are prepared, respectively, and image data in which the row direction is emphasized by multiplying the image data respectively and image data in which the column direction is emphasized are acquired. be able to.
- the column direction of the image data is an image data column in the direction in which the laser to be annealed is scanned
- the row direction of the image data is an image data row in the beam direction of the laser shot to be annealed.
- Image data in which shading is emphasized by convolution is digitized by projective transformation.
- By digitizing in the row direction and the column direction unevenness in the shot direction and the scanning direction can be determined.
- projective transformation in the row direction is performed with the image data with emphasis on the row direction
- projection conversion in the column direction is performed with the image data with the column direction emphasized. It can be performed.
- image data in which the row direction is emphasized by convolution and image data in which the column direction is emphasized by convolution are provided, these can be combined into one image data.
- a threshold value is set in advance, and numerical values obtained by projective transformation are compared. When the numerical value reaches the threshold value, it can be determined that there is unevenness.
- the above-described image processing of the image data can be performed by the image processing unit, and the above-described determination can be performed by the determination unit.
- the image processing unit and the determination unit can be configured with a CPU and a program for operating the CPU as main components, and can also be configured with an image processing unit and a determination unit.
- the determination result can be made visible by the display unit. Further, the display unit can display the color image acquired from the reflected light receiving unit and the image data subjected to the image processing up to the projective transformation on the same screen.
- the unevenness of the surface of the thin film subjected to the laser annealing treatment can be determined specifically and accurately. According to this determination, if the specified value is exceeded, the laser annealing process can be stopped as a defect to minimize the defect. In addition to the defect determination, the state of the thin film surface can be managed.
- FIG. 1 is a diagram schematically showing a thin film surface inspection apparatus 1 and a laser annealing apparatus 10 according to the present invention.
- the laser annealing apparatus 10 includes a laser optical system 11 that forms and irradiates an excimer laser into a uniform line beam, a stage 12 that loads the glass substrate 100, an X-axis drive system 13 that drives the stage 12 in the scanning direction, and an orthogonal thereto.
- the Y-axis drive system 14 is configured.
- the stage 12, the X-axis drive system 13, and the Y-axis drive system 14 are installed in the annealing chamber 15.
- the laser 20 irradiated from the laser optical system 11 is introduced into the annealing chamber 15 and irradiated to a glass substrate 100 (hereinafter referred to as a substrate) on which an amorphous silicon film is formed, whereby amorphous silicon on the surface is applied to the polysilicon film 101.
- the polysilincon film 101 corresponds to a thin film to be inspected in the present invention.
- the stage 12 is moved by the X-axis drive system 13 when the laser 20 is irradiated, so that the laser 20 relatively moves and the glass substrate 100 is scanned with the laser 20.
- the Y-axis drive system 14 can move the stage 12 in the beam direction of the laser 20 and changes the scanning position of the laser 20 relative to the glass substrate 100.
- the thin film surface inspection apparatus 1 inspects unevenness of the surface of the polysilicon film 101 that has been crystallized by laser irradiation.
- the thin film surface inspection apparatus 1 includes an illumination 2 as an inspection light irradiation unit and a CCD camera 3 as a reflected light receiving unit. It is provided in the annealing chamber 15.
- the CCD camera 3 is connected to an image processing unit 5 outside the annealing chamber 15 via a cable 4. Outside the annealing chamber 15, a determination unit 6 is connected to the image processing unit 5, and a display unit 7 is connected to the determination unit 6.
- the image processing unit 5 and the determination unit 6 mainly include a CPU and a program for operating the CPU, and further include a storage unit that stores data used for image processing, data used for determination, and the like.
- the display unit 7 can be configured by a CRT or LCD, and the configuration is not particularly limited as the present invention. In short, any information can be used as long as appropriate information such as characters and diagrams can be displayed.
- White inspection light 2a is irradiated from the illumination 2 onto the polysilicon film 101 subjected to laser annealing.
- the irradiation of the inspection light 2a can be performed while performing the laser annealing process, but may be performed in a state where the movement of the stage 12 is stopped by interrupting or terminating the laser annealing process.
- the irradiated inspection light 2a is reflected by the polysilicon film 101, and the reflected light 2b reflected by a predetermined area of the polysilicon film 101 is received by the CCD camera 3 (step s1).
- the color image information received by the CCD camera 3 is transmitted to the image processing unit 5 through the cable 4.
- FIG. 3 is a diagram showing the stripe unevenness on the substrate surface by laser irradiation.
- the laser 20 is formed into a long and narrow uniform beam by the laser optical system 11.
- the glass substrate 100 is on the stage 12, and the long axis beam anneals the entire surface of the glass substrate 100 when the stage 12 is driven.
- unevenness appearing in the direction parallel to the major axis (line beam direction) on the polysilicon film 101 is the shot unevenness 102
- unevenness appearing parallel to the beam driving (scanning direction) direction is the scan unevenness 103.
- the unevenness is dispersed, it does not become defective, and when the unevenness is connected in a line shape, it becomes a cause of failure.
- the image reflected on the surface of the glass substrate 100 and received by the CCD camera 3 appears as a colored image when white light is applied due to the irregularities on the surface of the glass substrate 100 caused by the annealing process. For example, blue and green are shown, but in some cases it may appear yellow or red.
- the image processing unit 5 selects an optimum color component from the color image. Specifically, the color having the largest light distribution is selected, and the image is converted to monochrome according to the intensity of the color (step s2).
- the monochrome image data is represented by matrix data in which the laser beam direction is a row and the laser scanning direction is a column.
- a matrix of predetermined coefficients is multiplied with image data indicated by the matrix.
- a matrix for emphasizing image density in the row direction and a matrix for emphasizing image density in the column direction are prepared as matrixes of the predetermined coefficients to be multiplied with the image data, and are multiplied with the image data.
- the following matrix (1) is prepared as a matrix for emphasizing the row direction in the image data
- the matrix (2) is prepared as a matrix for emphasizing the column direction, and multiplied by the image data.
- projections in the respective directions are obtained using the fact that streaks gathered in the scan direction and the shot direction appear (step s4).
- projective transformation is performed in the shot direction and the scan direction according to the following expressions.
- x is the position of the image in the shot direction
- y is the position of the image in the scan direction
- f (x) is the image data at the x position
- f (y) is the image data at the y position
- Nx is the image in the shot direction
- Ny indicates the number of images in the scanning direction.
- the cocoon projection is the sum in each direction, it is resistant to noise and cancels out random values. That is, the shot unevenness can be expressed as a numerical value by calculating a difference in projection in the shot direction. An image with strong shot unevenness has a large difference in projection in the shot direction, and a weak image has a small difference in projection. Similarly, the scan unevenness can be expressed as a numerical value by calculating a difference in projection in the scan direction. An image with a lot of scan unevenness has a large difference in projection in the scan direction, and a weak image has a small difference in projection.
- FIG. 4 and 5 show an image with weak unevenness and an image with strong unevenness.
- FIG. 4 is an image obtained by performing convolution in the shot direction and the scan direction on an image with weak unevenness. Projection is performed based on this, and the unevenness is quantified.
- FIG. 5 is an image obtained by performing convolution in the shot direction and the scan direction on an image with strong unevenness. Projection is performed based on this, and the unevenness is quantified.
- shot unevenness and scan unevenness can be quantified based on the difference in projection.
- the determination can be made by setting an appropriate standard.
- the reference value is arbitrary, and the present invention is not limited to a specific numerical value. A reference value is prepared for each of shot unevenness and scan unevenness.
- the data projected in the shot direction is compared with the reference value in the shot direction. If the data exceeds the reference value, it is determined that there is unevenness in the shot direction, and the data projected in the scan direction and the reference value in the scan direction are If the data exceeds the reference value, it is determined that there is unevenness in the scan direction. This makes it possible to specifically quantify and determine unevenness on the surface of the laser-annealed thin film, and automation is easy.
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Abstract
Description
しかし、レーザのエネルギーのばらつきや光学系の傷や曇りにより、レーザ形状方向のショットムラおよびレーザ走査方向のスキャンムラが生じることがあり、これらが後工程において不良品の原因となる。そのため、基板表面の照射ムラ検査は欠かせないものとなっている。
具体的には光源の角度を最適にして検査光を照射し、緑色の反射光の強度変化によってストライプ状の模様が出現するか否かによってレーザエネルギーが適当か不適当かを結論できるとしている。
また、上記の従来方法では、白色光を照射して、基板表面が緑色に見えることを示しているが、光源の角度や基板表面の状態によっては、青色や黄色に見える場合もあることがわかっており、上記のように緑色の反射光を前提にすると、適切な判定が難しい場合がある。
前記画像処理部は、前記画像情報に対し、前記本発明のモノクロ化処理、コンボリューション処理および射影変換を実行し、
前記判定部は、前記本発明の判定を実行することを特徴とする。
また、検査光が薄膜に照射されて反射する反射光は反射光受光部で受光される。反射光受光部は、反射光をカラー画像として受光して画像情報を出力するものであればよく、その構成は特に限定されるものではなく、CCDなどの適宜の受光部を用いることができる。
コンボリューションでは、行方向を強調する行列と列方向を強調する行列とをそれぞれ用意し、画像データにそれぞれ掛け合わせて行方向を強調した画像データと、列方向を強調した画像データをそれぞれ取得することができる。画像データの列方向は、アニールを行うレーザが走査された方向の画像データ列であり、画像データの行方向は、アニールを行うレーザショットのビーム方向の画像データ行である。行方向と、列方向とをそれぞれ強調する行列を用意することで、行方向と列方向のムラをそれぞれ確実に判定することが可能になる。
画像処理部および判定部は、CPUとこれを動作させるプログラムとを主構成とするもので構成することができ、画像処理部と判定部を兼用するもので構成することも可能である。
該判定により、万一、規定値を超えた場合、不良としてレーザアニール処理を停止させて不良を最小限にとどめることができる。また、不良判定以外にも、薄膜表面の状態を管理することができる。
図1は、本発明の薄膜の表面検査装置1とレーザアニール装置10の概略を示す図である。
レーザアニール装置10は、エキシマレーザを均一なラインビームに形成し照射するレーザ光学系11と、ガラス基板100を載荷するステージ12と、ステージ12をスキャン方向に駆動するX軸駆動系13およびそれに直交するY軸駆動系14で構成されている。
ステージ12、X軸駆動系13、Y軸駆動系14は、アニール室15内に設置されている。
レーザ光学系11より照射されたレーザ20は、アニール室15内に導入され、アモルファスシリコン膜が形成されたガラス基板100(以下基板)に照射することによって、表面のアモルファスシリコンをポリシリコン膜101に変える。このポリシリンコン膜101は、本発明で検査対象となる薄膜に相当する。ステージ12は、レーザ20の照射時にX軸駆動系13で移動することで、レーザ20が相対的に移動し、ガラス基板100に対しレーザ20の走査がなされる。Y軸駆動系14は、レーザ20のビーム方向にステージ12を移動させることができ、ガラス基板100に対するレーザ20の走査位置を変更する。
照明2から白色の検査光2aがレーザアニール処理されたポリシリコン膜101に照射される。検査光2aの照射は、レーザアニール処理しつつ行うこともできるが、レーザアニール処理を中断または終了してステージ12の移動を停止した状態で行うようにしてもよい。
照射された検査光2aは、ポリシリコン膜101で反射され、ポリシリコン膜101の所定エリアで反射した反射光2bがCCDカメラ3に受光される(ステップs1)。CCDカメラ3で受光したカラー画像情報はケーブル4を通して画像処理部5に送信される。
本実施形態では、画像処理部5でカラー画像の内で最適な色成分を選択する。具体的には、最も光分布が大きい色を選択し、その色の強度によって画像をモノクロ化する(ステップs2)。
モノクロ化した画像データは、レーザのビーム方向を行、レーザの走査方向を列とする行列データで示すものとする。
例えば、画像データに、行方向を強調する行列として下記(1)の行列を用意し、列方向を強調する行列として下記(2)の行列を用意して画像データに掛け合わせる。
具体的には下記に示す式によってショット方向、スキャン方向にそれぞれ射影変換する。
ショット方向=(Max(Σf(x)/Nx)-Min(Σf(x)/Nx))/平均
スキャン方向=(Max(Σf(y)/Ny)-Min(Σf(y)/Ny))/平均
ただし、xはショット方向の画像の位置、yはスキャン方向の画像の位置、f(x)はx位置における画像データ、f(y)はy位置における画像データ、Nxはショット方向の画像の数、Nyはスキャン方向の画像の数を示す。
このように、射影の差を基に、ショットムラとスキャンムラを数値化することができる。
判定は、適宜の基準を定めて行うことができる。基準値は任意であり、本発明としては特定の数値に限定されるものではない。基準値はショットムラ、スキャンムラそれぞれに用意する。ショット方向に射影されたデータとショット方向の基準値とを比較し、データが基準値を超える場合、ショット方向にムラがあると判定し、スキャン方向に射影されたデータとスキャン方向の基準値とを比較し、データが基準値を超える場合、スキャン方向にムラがあると判定する。これによりレーザアニールされた薄膜表面のムラを具体的に数値化して判定することが可能になり、自動化も容易である。
2 照明
2a 検査光
2b 反射光
3 CCDカメラ
5 画像処理部
6 判定部
7 表示部
10 レーザアニール装置
11 レーザ光学系
12 ステージ
13 X軸駆動系
14 Y軸駆動系
20 レーザ
100 ガラス基板
101 ポリシリコン膜
102 ショットムラ
103 スキャンムラ
Claims (10)
- レーザアニール処理が施された薄膜表面に、検査光を照射し、該照射によって前記薄膜表面で反射した反射光を受光してカラー画像を取得し、前記カラー画像の色成分を検出し、検出された色成分に基づいて前記カラー画像をモノクロ化し、モノクロ化された画像のデータをコンボリューションして画像濃淡を強調した画像データを取得し、画像濃淡を強調した前記画像データを射影変換し、該射影変換がされた画像データに基づいて前記薄膜の表面ムラを判定することを特徴とする薄膜の表面検査方法。
- 前記モノクロ化は、前記検出がされた色成分のうち、主となる色成分を用いて行うことを特徴とする請求項1記載の薄膜の表面検査方法。
- 前記主となる色成分は、光分布が他の色成分よりも相対的に大きい色成分であることを特徴とする請求項2記載の薄膜の表面検査方法。
- 前記コンボリューションは、所定係数の行列をモノクロ化された画像のデータの行列に掛け合わせることによって行うことを特徴とする請求項1~3のいずれかに記載の薄膜の表面検査方法。
- 前記画像のデータが行列からなり、該行列の行のデータが前記レーザアニール処理に用いたレーザのラインビーム方向に沿ったデータであり、該行列の列のデータが前記レーザのスキャン方向に沿ったデータであることを特徴とする請求項4に記載の薄膜の表面検査方法。
- 前記所定係数の行列は、ビーム方向を強調するものと、スキャン方向を強調するものとをそれぞれ用いてビーム方向の画像濃淡を強調した画像データとスキャン方向の画像濃淡を強調した画像データとをそれぞれ取得することを特徴とする請求項5記載の薄膜の表面検査方法。
- 前記射影変換は、画像濃淡を強調した前記データの行列の行と列とでそれぞれ射影変換することを特徴とする請求項5または6に記載の薄膜の表面検査方法。
- 前記射影変換をした画像データの行方向の数値に基づいて、ショットムラを判定し、前記データの列方向の数値に基づいてスキャンムラを判定することを特徴とする請求項7記載の薄膜の表面検査方法。
- レーザ光の照射によってアニール処理がされた薄膜に検査光を照射する検査光照射部と、該検査光が前記薄膜で反射した反射光を受光する反射光受光部と、前記受光部から出力される画像情報を受ける画像処理部と、前記画像処理部で処理された画像データに基づいて薄膜表面のムラの判定を行う判定部とを備え、
前記画像処理部は、前記画像情報に対し、請求項1~8のいずれかに記載されたモノクロ化処理、コンボリューション処理および射影変換を実行し、
前記判定部は、請求項8に記載された判定を実行することを特徴とする薄膜の表面検査装置。 - 前記判定部で判定された判定結果を表示する表示部を備えることを特徴とする請求項9記載の薄膜の表面検査装置。
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JP2016129171A (ja) * | 2015-01-09 | 2016-07-14 | 株式会社日本製鋼所 | 半導体膜の表面ムラ検出装置、レーザアニール装置および半導体膜の表面ムラ検出方法 |
CN106252259A (zh) * | 2015-06-09 | 2016-12-21 | Ap系统股份有限公司 | 依靠激光结晶设施的Mura量化系统与依靠激光结晶设施的Mura量化方法 |
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CN107003255A (zh) * | 2014-12-08 | 2017-08-01 | 株式会社高永科技 | 在基板上形成的部件的端子检查方法及基板检查装置 |
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CN106252259A (zh) * | 2015-06-09 | 2016-12-21 | Ap系统股份有限公司 | 依靠激光结晶设施的Mura量化系统与依靠激光结晶设施的Mura量化方法 |
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