WO2012114593A1 - Filtre de dérivation d'ondes acoustiques - Google Patents

Filtre de dérivation d'ondes acoustiques Download PDF

Info

Publication number
WO2012114593A1
WO2012114593A1 PCT/JP2011/077174 JP2011077174W WO2012114593A1 WO 2012114593 A1 WO2012114593 A1 WO 2012114593A1 JP 2011077174 W JP2011077174 W JP 2011077174W WO 2012114593 A1 WO2012114593 A1 WO 2012114593A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
signal terminal
side ground
terminal
acoustic wave
Prior art date
Application number
PCT/JP2011/077174
Other languages
English (en)
Japanese (ja)
Inventor
高峰　裕一
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2012114593A1 publication Critical patent/WO2012114593A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0023—Balance-unbalance or balance-balance networks
    • H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
    • H03H9/0047—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks
    • H03H9/0066—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically parallel
    • H03H9/0071—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically parallel the balanced terminals being on the same side of the tracks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices

Definitions

  • the present invention relates to an elastic wave duplexer.
  • the present invention relates to an acoustic wave duplexer including a longitudinally coupled resonator type acoustic wave filter.
  • an RF (Radio Frequency) circuit is used to simultaneously transmit and receive signals.
  • a duplexer is installed.
  • the duplexer is a duplexer including a transmission filter, a reception filter, and a matching circuit.
  • FIG. 33 is a schematic circuit diagram of the elastic wave duplexer 100 described in Patent Document 1.
  • the elastic wave duplexer 100 includes an antenna terminal 101, a transmission-side signal terminal 102, and first and second reception-side signal terminals 103a and 103b.
  • a transmission filter 104 is connected between the antenna terminal 101 and the transmission-side signal terminal 102.
  • the transmission filter 104 is configured by a ladder type elastic wave filter.
  • a reception filter 105 is connected between the antenna terminal 101 and the first and second reception-side signal terminals 103a and 103b.
  • the reception filter 105 is constituted by a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function. Therefore, the first and second receiving signal terminals 103a and 103b are first and second balanced signal terminals.
  • the first reception-side signal terminal 103 a and the second reception-side signal terminal 103 b are connected to the same IDT electrodes 106 and 107 of the reception filter 105.
  • the first receiving signal terminal 103a is connected to the comb-like electrodes 106a and 107a on one side of the IDT electrodes 106 and 107.
  • the second receiving side signal terminal 103b is connected to the comb-like electrodes 106b and 107b on the other side of the IDT electrodes 106 and 107. Therefore, the IDT electrodes 106 and 107 to which the first and second receiving signal terminals 103a and 103b are connected are floating electrodes (float electrodes) that are not connected to the ground.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide an elastic wave demultiplexer including a longitudinally coupled resonator type elastic wave filter, which has large common mode isolation. Is to provide a vessel.
  • the first acoustic wave duplexer includes a transmission filter and a reception filter.
  • the transmission filter is constituted by an elastic wave filter.
  • the reception filter is composed of a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function.
  • a wiring board and at least one elastic wave filter chip are provided.
  • the wiring board has a die attach surface and a back surface.
  • the elastic wave filter chip is mounted on the die attach surface.
  • the acoustic wave filter chip has a piezoelectric substrate and electrodes that constitute a reception filter. The electrodes constituting the reception filter are formed on the piezoelectric substrate.
  • the electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes.
  • the unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate.
  • the plurality of IDT electrodes include an unbalanced signal terminal side IDT electrode, a first balanced signal terminal side IDT electrode, and a second balanced signal terminal side IDT electrode.
  • the unbalanced signal terminal side IDT electrode has a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal side ground terminal.
  • the first balanced signal terminal-side IDT electrode includes a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the second balanced signal terminal-side IDT electrode has a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the wiring board has an unbalanced signal terminal side ground electrode and a balanced signal terminal side ground electrode.
  • the unbalanced signal terminal side ground electrode is connected to the unbalanced signal terminal side ground terminal.
  • the balanced signal terminal side ground electrode is connected to the balanced signal terminal side ground terminal.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are not connected to each other on the wiring board.
  • the second acoustic wave duplexer includes a transmission filter and a reception filter.
  • the transmission filter is constituted by an elastic wave filter.
  • the reception filter is composed of a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function.
  • a wiring board and at least one elastic wave filter chip are provided.
  • the wiring board has a die attach surface and a back surface.
  • the elastic wave filter chip is mounted on the die attach surface.
  • the acoustic wave filter chip has a piezoelectric substrate and electrodes that constitute a reception filter. The electrodes constituting the reception filter are formed on the piezoelectric substrate.
  • the electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes.
  • the unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate.
  • the plurality of IDT electrodes include an unbalanced signal terminal side IDT electrode, a first balanced signal terminal side IDT electrode, and a second balanced signal terminal side IDT electrode.
  • the unbalanced signal terminal side IDT electrode has a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal side ground terminal.
  • the first balanced signal terminal-side IDT electrode includes a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the second balanced signal terminal-side IDT electrode has a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the wiring board has an unbalanced signal terminal side ground electrode and a balanced signal terminal side ground electrode.
  • the unbalanced signal terminal side ground electrode is connected to the unbalanced signal terminal side ground terminal.
  • the balanced signal terminal side ground electrode is connected to the balanced signal terminal side ground terminal.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are shared on the back surface of the wiring board.
  • the acoustic wave filter chip constitutes a reception-side acoustic wave filter chip having an electrode that constitutes a reception filter, and a transmission filter.
  • a transmission-side acoustic wave filter chip having an electrode to be transmitted.
  • the transmission filter is configured by a ladder type acoustic wave filter.
  • the electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator.
  • the acoustic wave resonator constituting the parallel arm resonator is composed of comb-like electrodes connected to the acoustic wave resonator constituting the series arm resonator and comb teeth connected to the transmission-side ground terminal.
  • an IDT electrode having a shape electrode.
  • the wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal. The transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board.
  • the transmission filter is configured by a ladder-type elastic wave filter.
  • the electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator.
  • the acoustic wave resonator constituting the parallel arm resonator is composed of comb-like electrodes connected to the acoustic wave resonator constituting the series arm resonator and comb teeth connected to the transmission-side ground terminal.
  • an IDT electrode having a shape electrode.
  • the wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board.
  • the “elastic wave” includes a surface acoustic wave and a boundary acoustic wave.
  • an acoustic wave duplexer including a longitudinally coupled resonator type acoustic wave filter and having a large common mode isolation.
  • FIG. 1 is a schematic circuit diagram of an elastic wave duplexer according to a first embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 3 is a schematic perspective plan view of the transmission-side elastic wave filter chip in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 4 is a schematic perspective plan view of the reception-side surface acoustic wave filter chip in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 5 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 6 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 7 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 9 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 10 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 11 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 12 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 13 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 14 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 15 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 16 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 17 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 18 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 19 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 20 is a graph showing common mode isolation characteristics of the elastic wave duplexer according to each of the first example and the first and second comparative examples.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 23 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 24 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second
  • FIG. 25 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 26 is a graph showing the common mode isolation characteristics of the elastic wave duplexer according to each of the first example and the third comparative example.
  • FIG. 27 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 28 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 29 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 30 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 31 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 32 is a graph showing the common mode isolation characteristics of the elastic wave duplexer according to each of the first and second embodiments.
  • FIG. 33 is a schematic circuit diagram of the elastic wave duplexer described in Patent Document 1.
  • the elastic wave duplexer according to the present invention is not limited to the surface acoustic wave duplexer 1.
  • the elastic wave duplexer according to the present invention may be another type of elastic wave duplexer such as a triplexer.
  • the elastic wave duplexer according to the present invention may be a boundary acoustic wave duplexer using a boundary acoustic wave.
  • the surface acoustic wave duplexer 1 is mounted on an RF circuit such as a mobile phone corresponding to a CDMA system such as UMTS.
  • the surface acoustic wave duplexer 1 of the present embodiment is specifically a duplexer corresponding to UMTS-BAND2. Note that the transmission frequency band of UMTS-BAND2 is 1850 MHz to 1910 MHz. The reception frequency band of UMTS-BAND2 is 1930 MHz to 1990 MHz.
  • FIG. 1 is a schematic circuit diagram of a surface acoustic wave duplexer 1 according to this embodiment. First, the circuit configuration of the surface acoustic wave duplexer 1 will be described with reference to FIG.
  • the surface acoustic wave duplexer 1 includes an antenna Ant. Antenna terminal 21, a transmission side signal terminal 24, and first and second reception side signal terminals 22a and 22b.
  • a transmission filter 14 is connected between the antenna terminal 21 and the transmission-side signal terminal 24.
  • a reception filter 15 is connected between the antenna terminal 21 and the first and second reception-side signal terminals 22a and 22b.
  • a matching circuit made up of an inductor L1 is connected between the connection point between the antenna terminal 21 and the antenna terminal 21 and the ground.
  • the inductor L1 is constituted by a chip inductor and is mounted on the RF circuit together with the surface acoustic wave duplexer 1.
  • the surface acoustic wave duplexer 1 may include a matching circuit. In that case, the matching circuit is connected between one or both of the transmission filter 14 and the reception filter 15 and the antenna terminal 21.
  • the transmission filter 14 is a ladder type surface acoustic wave filter.
  • the transmission filter 14 has an output terminal 14a and an input terminal 14b.
  • the output terminal 14 a is connected to the antenna terminal 21.
  • the input terminal 14 b is connected to the transmission side signal terminal 24.
  • the transmission filter 14 has a serial arm 33 that connects the input terminal 14b and the output terminal 14a.
  • series arm resonators S1, S2, S3, and S4 are connected in series.
  • Each of the series arm resonators S1, S2, S3, and S4 is composed of a plurality of surface acoustic wave resonators that function as one resonator.
  • the power durability of the transmission filter 14 can be improved.
  • each of the series arm resonators S1, S2, S3, and S4 may be composed of one surface acoustic wave resonator.
  • a capacitor C is connected in parallel to the series arm resonator S2.
  • the capacitor C is composed of a pair of comb-like electrodes that are interleaved with each other.
  • the transmission filter 14 has parallel arms 37a to 37d connected between the serial arm 33 and the ground.
  • Parallel arm resonators P1, P2, P3, and P4 are provided in each of the parallel arms 37a to 37d.
  • Each of the parallel arm resonators P1, P2, P3, and P4 includes a plurality of surface acoustic wave resonators that function as a single resonator.
  • the power durability of the transmission filter 14 can be improved.
  • each of the parallel arm resonators P1, P2, P3, and P4 may be composed of one surface acoustic wave resonator.
  • the transmission filter 14 includes transmission-side ground terminals 14c and 14d.
  • the transmission side ground terminal 14c is connected to the parallel arms 37a to 37c. That is, the parallel arms 37a to 37c are connected to the ground via the transmission side ground terminal 14c.
  • the transmission side ground terminal 14d is connected to the parallel arm 37d. That is, the parallel arm 37d is connected to the ground via the transmission-side ground terminal 14d.
  • An inductor L2 is connected between the parallel arm resonators P1, P2, P3 and the ground.
  • An inductor L3 is connected between the parallel arm resonator P4 and the ground.
  • the inductor L2 is connected between the transmission-side ground terminal 14c and the ground.
  • An inductor L3 is connected between the transmission-side ground terminal 14d and the ground.
  • the surface acoustic wave resonator constituting the parallel arm resonator P1 includes a comb-like electrode connected to the surface acoustic wave resonators constituting the series arm resonators S1 and S2, and a transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode.
  • the surface acoustic wave resonator constituting the parallel arm resonator P2 includes a comb-like electrode connected to the surface acoustic wave resonators constituting the series arm resonators S2 and S3, and a transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode.
  • the surface acoustic wave resonator constituting the parallel arm resonator P3 includes comb-like electrodes connected to the surface acoustic wave resonators constituting the series arm resonators S3 and S4, and the transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode.
  • the surface acoustic wave resonator constituting the parallel arm resonator P4 is connected to the comb-like electrode connected to the surface acoustic wave resonator constituting the series arm resonator S4 and the transmission-side ground terminal 14d. And an IDT electrode having a comb-like electrode.
  • the reception filter 15 is composed of a balanced longitudinally coupled resonator type surface acoustic wave filter having a balanced-unbalanced conversion function.
  • the reception filter 15 includes an unbalanced signal terminal 15a and first and second balanced signal terminals 15b and 15c.
  • the unbalanced signal terminal 15a is connected to the antenna terminal 21.
  • the first balanced signal terminal 15b is connected to the first receiving signal terminal 22a.
  • the second balanced signal terminal 15c is connected to the second receiving signal terminal 22b.
  • the impedance of the unbalanced signal terminal 15a is 50 ⁇ .
  • the impedances of the first and second balanced signal terminals 15b and 15c are 100 ⁇ .
  • the reception filter 15 includes a first longitudinally coupled resonator type surface acoustic wave filter element 15A, a second longitudinally coupled resonator type surface acoustic wave filter element 15B, and surface acoustic wave resonators 17a to 17e.
  • the first longitudinally coupled resonator type surface acoustic wave filter element 15A is connected between the unbalanced signal terminal 15a and the first balanced signal terminal 15b.
  • the second longitudinally coupled resonator type surface acoustic wave filter element 15B is connected between the unbalanced signal terminal 15a and the second balanced signal terminal 15c.
  • the first longitudinally coupled resonator type surface acoustic wave filter element 15A is provided with IDT electrodes 15A1, 15A2, and 15A3 arranged along the surface acoustic wave propagation direction, and these three IDT electrodes 15A1, 15A2, and 15A3. And a pair of reflectors 15A4 and 15A5 disposed on both sides of the surface acoustic wave propagation direction in the region. That is, the first longitudinally coupled resonator type surface acoustic wave filter element 15A is a 3IDT type longitudinally coupled resonator type surface acoustic wave filter element.
  • the comb-like electrodes on one side of the IDT electrodes 15A1 and 15A3 located on both sides of the surface acoustic wave propagation direction are connected to the unbalanced signal terminal 15a, and the comb-like electrode on the other side is connected to the ground. Has been.
  • the comb-like electrode on one side of the IDT electrode 15A2 located in the center of the surface acoustic wave propagation direction is connected to the ground, and the comb-like electrode on the other side is connected to the first balanced signal terminal 15b.
  • a surface acoustic wave resonator 17d is connected between the connection point between the IDT electrode 15A2 and the first balanced signal terminal 15b and the ground.
  • the surface acoustic wave resonator 17d includes one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, the surface acoustic wave resonator 17d is a 1-port surface acoustic wave resonator.
  • the second longitudinally coupled resonator type surface acoustic wave filter element 15B is provided with IDT electrodes 15B1, 15B2, and 15B3 arranged along the surface acoustic wave propagation direction, and these three IDT electrodes 15B1, 15B2, and 15B3. And a pair of reflectors 15B4 and 15B5 disposed on both sides of the surface acoustic wave propagation direction in the region. That is, the second longitudinally coupled resonator type surface acoustic wave filter element 15B is a 3IDT type longitudinally coupled resonator type surface acoustic wave filter element.
  • the comb-like electrodes on one side of the IDT electrodes 15B1 and 15B3 located on both sides of the surface acoustic wave propagation direction are connected to the unbalanced signal terminal 15a, and the comb-like electrode on the other side is connected to the ground. Has been.
  • the comb-like electrode on one side of the IDT electrode 15B2 located in the center of the surface acoustic wave propagation direction is connected to the ground, and the comb-like electrode on the other side is connected to the second balanced signal terminal 15c.
  • a surface acoustic wave resonator 17e is connected between the connection point between the IDT electrode 15B2 and the second balanced signal terminal 15c and the ground.
  • the surface acoustic wave resonator 17e includes one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, the surface acoustic wave resonator 17e is a 1-port surface acoustic wave resonator.
  • the surface acoustic wave propagation direction of the first longitudinally coupled resonator type surface acoustic wave filter element 15A is used in order to invert the phase.
  • the IDT electrodes 15B1 and 15B3 located on both sides of the surface acoustic wave propagation direction of the second longitudinally coupled resonator type surface acoustic wave filter element 15B are inverted with respect to the IDT electrodes 15A1 and 15A3 located on both sides of Has been.
  • Other configurations are the same between the first longitudinally coupled resonator type surface acoustic wave filter element 15A and the second longitudinally coupled resonator type surface acoustic wave filter element 15B.
  • the surface acoustic wave resonators 17a to 17c are connected in series between the unbalanced signal terminal 15a and the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A and 15B.
  • Each of the surface acoustic wave resonators 17a to 17c has one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, each of the surface acoustic wave resonators 17a to 17c is a one-port surface acoustic wave resonator.
  • the surface acoustic wave resonators 17 a to 17 c are provided to adjust the phase with the transmission filter 14.
  • the surface acoustic wave resonators 17 a to 17 c have a resonance frequency located in the pass band of the reception filter 15 and an anti-resonance frequency higher than the pass band of the reception filter 15 and located outside the pass band. It is configured as follows.
  • the surface acoustic wave resonators 17 d and 17 e are provided to increase the out-of-band attenuation of the reception filter 15.
  • the surface acoustic wave resonators 17d and 17e are configured such that the resonance frequency is lower than the pass band of the reception filter 15, is located outside the pass band, and the anti-resonance frequency is located in the pass band. Yes.
  • FIG. 2 is a schematic cross-sectional view of the surface acoustic wave duplexer 1 according to the present embodiment. Next, a specific configuration of the surface acoustic wave duplexer 1 of the present embodiment will be described with reference mainly to FIG.
  • the surface acoustic wave duplexer 1 includes a wiring board 10, a transmission-side surface acoustic wave filter chip 18, and a reception-side surface acoustic wave filter chip 19.
  • the transmission-side surface acoustic wave filter chip 18 is formed with portions of the transmission filter 14 excluding the inductors L2 and L3.
  • the inductors L2 and L3 are provided on the wiring board 10.
  • a reception filter 15 is formed on the reception-side surface acoustic wave filter chip 19.
  • FIG. 3 is a schematic perspective plan view of the transmission-side surface acoustic wave filter chip 18 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 3 shows a state where the transmitting surface acoustic wave filter chip 18 is seen through from above the surface acoustic wave duplexer 1.
  • the transmission-side surface acoustic wave filter chip 18 is formed on the piezoelectric substrate 18A, the piezoelectric substrate 18A, and the IDT electrodes, reflectors, and capacitors that form the surface acoustic wave resonator.
  • On the piezoelectric substrate 18A there are an output terminal 14a to which the series arm resonator S1 is connected, an input terminal 14b to which the series arm resonator S4 and the parallel arm resonator P4 are connected, and parallel arm resonators P1 to P3.
  • a connected transmission-side ground terminal 14c and a transmission-side ground terminal 14d to which the parallel arm resonator P4 is connected are arranged.
  • the electrode 18B includes an output terminal 14a, an input terminal 14b, a transmission-side ground terminal 14c, a transmission-side ground terminal 14d, and dummy terminals 14e and 14f.
  • the dummy terminals 14e and 14f are provided to increase the bonding strength between the transmission-side surface acoustic wave filter chip 18 and the wiring board 10.
  • FIG. 4 is a schematic perspective plan view of the reception-side surface acoustic wave filter chip 19 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 4 shows a state in which the receiving surface acoustic wave filter chip 19 is seen through from above the surface acoustic wave duplexer 1.
  • the receiving surface acoustic wave filter chip 19 is formed on a piezoelectric substrate 19A and a piezoelectric substrate 19A, and the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A. 15B and IDT electrodes constituting the surface acoustic wave resonators 17a to 17e, and an electrode 19B including a reflector, wiring, and the like. That is, the electrode 19B is an electrode that constitutes the reception filter 15.
  • On the piezoelectric substrate 19A there are unbalanced signal terminal 15a, first and second balanced signal terminals 15b and 15c, unbalanced signal terminal side ground terminal 15d, and balanced signal terminal side ground terminals 15e and 15f. Has been placed.
  • the electrode 19B includes an unbalanced signal terminal 15a, first and second balanced signal terminals 15b and 15c, an unbalanced signal terminal side ground terminal 15d, and balanced signal terminal side ground terminals 15e and 15f.
  • the unbalanced signal terminal side ground terminal 15d is connected to the comb-like electrode on one side of the IDT electrodes 15A1, 15A3, 15B1, and 15B3.
  • the balanced signal terminal side ground terminal 15e is connected to the comb-like electrodes on one side of the IDT electrodes 15A2 and 15B2.
  • the balanced signal terminal side ground terminal 15f is connected to one comb-like electrode of the IDT electrode constituting the surface acoustic wave resonators 17d and 17e.
  • the IDT electrodes 15A1, 15A3, 15B1, and 15B3 are unbalanced having comb-like electrodes connected to the unbalanced signal terminal 15a and comb-like electrodes connected to the unbalanced signal terminal side ground terminal 15d. It is a balanced signal terminal side IDT electrode.
  • the IDT electrode 15A2 is a first balanced signal terminal side IDT having a comb-like electrode connected to the first balanced signal terminal 15b and a comb-like electrode connected to the balanced signal terminal side ground terminal 15e. Electrode.
  • the IDT electrodes constituting the surface acoustic wave resonator 17d are comb-like electrodes connected to the first balanced signal terminal 15b, and comb-like electrodes connected to the balanced signal terminal side ground terminal 15f.
  • the IDT electrode 15B2 is a second balanced signal terminal side IDT having a comb-like electrode connected to the second balanced signal terminal 15c and a comb-like electrode connected to the balanced signal terminal side ground terminal 15e. Electrode.
  • the IDT electrodes constituting the surface acoustic wave resonator 17e are comb-like electrodes connected to the second balanced signal terminal 15c, and comb-like electrodes connected to the balanced signal terminal side ground terminal 15f. It is the 2nd balanced signal terminal side IDT electrode which has.
  • the unbalanced signal terminal side ground terminal 15d and the balanced signal terminal side ground terminals 15e, 15f are not connected to each other on the piezoelectric substrate 19A.
  • piezoelectric substrates 18A and 19A include piezoelectric single crystal substrates such as a LiNbO 3 substrate and a LiTaO 3 substrate.
  • the electrodes 18B and 19B can be formed of a metal such as aluminum or an alloy, for example.
  • the electrodes 18B and 19B may be configured by a stacked body of a plurality of metal layers, for example.
  • the wiring board 10 has a die attach surface 10a and a back surface 10b.
  • the transmission-side surface acoustic wave filter chip 18 and the reception-side surface acoustic wave filter chip 19 are flip-chip mounted by bumps 26 on the die attach surface 10a.
  • a sealing resin layer 16 is formed on the die attach surface 10 a so as to cover the transmission-side surface acoustic wave filter chip 18 and the reception-side surface acoustic wave filter chip 19. That is, the surface acoustic wave duplexer 1 of the present embodiment is a CSP (Chip Size Package) type acoustic wave duplexer.
  • CSP Chip Size Package
  • the wiring board 10 is formed by alternately laminating dielectric layers and electrode layers.
  • the wiring substrate 10 is constituted by a laminated body of first to third dielectric layers 40 to 42 and first to fourth electrode layers 44 to 47.
  • the first electrode layer 44 is disposed on the first dielectric layer 40.
  • the second electrode layer 45 is disposed between the first dielectric layer 40 and the second dielectric layer 41.
  • the third electrode layer 46 is disposed between the second dielectric layer 41 and the third dielectric layer 42.
  • the fourth electrode layer 47 is disposed under the third dielectric layer 42.
  • Each of the first to third dielectric layers 40 to 42 can be made of, for example, a resin or ceramics such as alumina. That is, the wiring board 10 may be a printed wiring multilayer board made of resin or a ceramic multilayer board.
  • the wiring board is configured by a laminate of three dielectric layers and four electrode layers.
  • the number of dielectric layers and the number of electrode layers of the wiring board are not particularly limited.
  • FIG. 5 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 6 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 7 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the
  • FIG. 9 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. 5 to 9 show a state in which the surface acoustic wave duplexer 1 is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • the first electrode layer 44 is a land electrode layer, and the first electrode layer 44 and the first dielectric layer 40 constitute a die attach surface 10 a of the wiring substrate 10. .
  • the first electrode layer 44 is composed of land electrodes 44a to 44l.
  • the second electrode layer 45 is composed of electrodes 45a to 45j.
  • the third electrode layer 46 is composed of electrodes 46a to 46i.
  • a resist layer 60 is formed on the back surface 10b.
  • the resist layer 60 covers a part of the fourth electrode layer 47, and includes the antenna terminal 21, the transmission side signal terminal 24, the first and second reception side signal terminals 22a and 22b, and the ground electrode 47a. Is formed.
  • the output terminal 14a of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44d shown in FIG.
  • the land electrode 44d is connected to the electrode 45d shown in FIG. 6 by a via hole electrode 51a formed in the first dielectric layer 40.
  • the unbalanced signal terminal 15a of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44g shown in FIG.
  • the land electrode 44g is connected to the electrode 45d by a via hole electrode 51b formed in the first dielectric layer 40.
  • the electrode 45d is connected to the electrode 46d shown in FIG. 7 by a via hole electrode 52a formed in the second dielectric layer 41.
  • the electrode 46d is connected to the antenna terminal 21 shown in FIGS. 1, 8, and 9 by a via-hole electrode 53a formed in the third dielectric layer.
  • the input terminal 14b of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44c shown in FIG.
  • the land electrode 44c is connected to the electrode 45c shown in FIG. 6 by a via hole electrode 51c formed in the first dielectric layer 40.
  • the electrode 45c is connected to the electrode 46c shown in FIG. 7 by a via hole electrode 52b formed in the second dielectric layer 41.
  • the electrode 46c is connected to the transmission-side signal terminal 24 shown in FIGS. 1, 8, and 9 by a via-hole electrode 53b formed in the third dielectric layer 42.
  • the transmission-side ground terminal 14c of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44b shown in FIG.
  • the land electrode 44b is connected to the electrode 45b shown in FIG. 6 by a via hole electrode 51d formed in the first dielectric layer 40.
  • the electrode 45b is connected to the electrode 46b shown in FIG. 7 by a via hole electrode 52c formed in the second dielectric layer 41.
  • An inductor L2 is constituted by the electrode 45b and the electrode 46b.
  • the electrode 46b is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a via-hole electrode 53c formed in the third dielectric layer.
  • the transmission-side ground terminal 14d of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44f shown in FIG.
  • the land electrode 44f is connected to the electrode 45f shown in FIG. 6 by a via hole electrode 51e formed in the first dielectric layer 40.
  • the electrode 45f is connected to the electrode 46e shown in FIG. 7 by a via hole electrode 52d formed in the second dielectric layer 41.
  • An inductor L3 is constituted by the electrode 45f and the electrode 46e.
  • the electrode 46e is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a via-hole electrode 53d formed in the third dielectric layer. That is, the land electrodes 44b and 44f, the electrodes 45b and 45f, the electrodes 46b and 46e, and the ground electrode 47a are transmission-side ground electrodes connected to the transmission-side ground terminals 14c and 14d.
  • the first balanced signal terminal 15b of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44i shown in FIG.
  • the land electrode 44i is connected to the electrode 45j shown in FIG. 6 by a via hole electrode 51f formed in the first dielectric layer 40.
  • the electrode 45j is connected to the electrode 46i shown in FIG. 7 by a via hole electrode 52e formed in the second dielectric layer 41.
  • the electrode 46i is connected to the first reception-side signal terminal 22a shown in FIGS. 1, 8, and 9 by a via-hole electrode 53e formed in the third dielectric layer.
  • the second balanced signal terminal 15c of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44l shown in FIG.
  • the land electrode 44l is connected to the electrode 45i shown in FIG. 6 by a via hole electrode 51g formed in the first dielectric layer 40.
  • the electrode 45i is connected to the electrode 46h shown in FIG. 7 by a via hole electrode 52f formed in the second dielectric layer 41.
  • the electrode 46h is connected to the second reception-side signal terminal 22b shown in FIGS. 1, 8, and 9 by a via-hole electrode 53f formed in the third dielectric layer 42.
  • the unbalanced signal terminal side ground terminal 15d of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44j shown in FIG.
  • the land electrode 44j is connected to the electrode 45g shown in FIG. 6 by a via hole electrode 51h formed in the first dielectric layer 40.
  • the electrode 45g is connected to the electrode 46f shown in FIG. 7 by a plurality of via hole electrodes 52g formed in the second dielectric layer 41.
  • the electrode 46f is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53g formed in the third dielectric layer 42. That is, the land electrode 44j, the electrode 45g, the electrode 46f, and the ground electrode 47a are unbalanced signal terminal side ground electrodes connected to the unbalanced signal terminal side ground terminal 15d.
  • the balanced signal terminal side ground terminal 15e of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44h shown in FIG.
  • the land electrode 44h is connected to the electrode 45h shown in FIG. 6 by a via hole electrode 51i formed in the first dielectric layer 40.
  • the electrode 45h is connected to the electrode 46g shown in FIG. 7 by a plurality of via hole electrodes 52h formed in the second dielectric layer 41.
  • the electrode 46g is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
  • the balanced signal terminal side ground terminal 15f of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44k shown in FIG.
  • the land electrode 44k is connected to the electrode 45h shown in FIG. 6 by a via hole electrode 51j formed in the first dielectric layer 40.
  • the electrode 45h is connected to the electrode 46g shown in FIG. 7 by a plurality of via hole electrodes 52h formed in the second dielectric layer 41.
  • the electrode 46g is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
  • the land electrodes 44k and 44h, the electrode 45h, the electrode 46g, and the ground electrode 47a are balanced signal terminal side ground electrodes connected to the balanced signal terminal side ground terminals 15e and 15f.
  • the dummy terminal 14e of the transmission filter 14 shown in FIG. 3 is connected to the land electrode 44a shown in FIG.
  • the land electrode 44 a is connected to the electrode 45 a shown in FIG. 6 by a via hole electrode 51 k formed in the first dielectric layer 40.
  • the electrode 45a is connected to the electrode 46a shown in FIG. 7 by a via hole electrode 52i formed in the second dielectric layer 41.
  • the electrode 46a is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53i formed in the third dielectric layer.
  • the dummy terminal 14f of the transmission filter 14 shown in FIG. 3 is connected to the land electrode 44e shown in FIG.
  • the land electrode 44e is connected to the electrode 45e shown in FIG. 6 by a via hole electrode 51l formed in the first dielectric layer 40.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are shared on the back surface of the wiring board.
  • an unbalanced signal terminal side ground electrode including a land electrode 44j, an electrode 45g, an electrode 46f, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, an electrode 46g, and a ground electrode
  • the ground signal terminal side ground electrode composed of 47 a is shared as the ground electrode 47 a on the back surface 10 b of the wiring board 10.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board.
  • a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, electrodes 46b and 46e, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, and an electrode 46g
  • the balanced signal terminal side ground electrode composed of the ground electrode 47 a is shared as the ground electrode 47 a on the back surface 10 b of the wiring substrate 10.
  • the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode which are paths through which the unbalanced signal flows to the ground
  • the balanced signal terminal-side ground electrode which is the path through which the balanced signal flows to the ground
  • a surface acoustic wave duplexer having a configuration substantially similar to that of the surface acoustic wave duplexer 1 according to the first embodiment was manufactured.
  • the common mode isolation characteristics of the surface acoustic wave duplexer according to the first embodiment are shown in FIGS.
  • the surface acoustic wave duplexer according to each of the first to third comparative examples has substantially the same configuration as the surface acoustic wave duplexer according to the first embodiment except for the wiring board 10.
  • FIG. 10 to 14 show the configuration of the wiring board 10 in the first comparative example.
  • FIG. 10 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 11 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 12 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 10 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 11 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface
  • FIG. 13 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. However, in FIG. 13, drawing of the resist layer 60 is omitted.
  • FIG. 14 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. 10 to 14 show a state in which the surface acoustic wave duplexer according to the first comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • an electrode 46x is arranged instead of the electrode 46f and the electrode 46g of the surface acoustic wave duplexer according to the first embodiment.
  • the electrode 46x is connected to the ground electrode 47a shown in FIGS. 13 and 14 by a plurality of via hole electrodes 53x formed in the third dielectric layer 42. Therefore, in the first comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. .
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46x, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45h
  • the balanced signal terminal side ground electrode composed of the electrode 46x and the ground electrode 47a is shared as the electrode 46x of the third electrode layer 46 and the ground electrode 47a of the fourth electrode layer 47.
  • FIG. 20 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 15 to FIG. 19 show the configuration of the wiring board 10 in the second comparative example.
  • FIG. 15 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 16 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 17 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 15 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 16 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the
  • FIG. 18 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. However, in FIG. 18, the drawing of the resist layer 60 is omitted.
  • FIG. 19 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. 15 to 19 show a state in which the surface acoustic wave duplexer according to the second comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • an electrode 45x is disposed in place of the electrode 45g and the electrode 45h of the surface acoustic wave duplexer according to the first embodiment, and the electrode 46f and the electrode An electrode 46x is disposed instead of 46g.
  • the electrode 45x is connected to the electrode 46x by a plurality of via hole electrodes 52x formed in the second dielectric layer 41.
  • the electrode 46x is connected to the ground electrode 47a shown in FIGS. 18 and 19 by a plurality of via hole electrodes 53x formed in the third dielectric layer.
  • the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. .
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45x, the electrode 46x, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45x
  • the balanced signal terminal side ground electrode composed of the electrode 46x and the ground electrode 47a includes the electrode 45x of the second electrode layer 45, the electrode 46x of the third electrode layer 46, and the ground electrode 47a of the fourth electrode layer 47.
  • FIG. 20 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 21 to 25 show the configuration of the wiring board 10 in the third comparative example.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 23 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface
  • FIG. 24 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. However, in FIG. 24, drawing of the resist layer 60 is omitted.
  • FIG. 25 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. 21 to 25 show a state in which the surface acoustic wave duplexer according to the third comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • an electrode 46y is used. Is arranged.
  • the electrode 46y is connected to the ground electrode 47a shown in FIGS. 24 and 25 by a plurality of via hole electrodes 53y formed in the third dielectric layer. Therefore, in the third comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. .
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46y, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45h
  • the balanced signal terminal side ground electrode composed of the electrode 46y and the ground electrode 47a is shared as the electrode 46y of the third electrode layer 46 and the ground electrode 47a of the fourth electrode layer 47.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared in the electrode layer disposed inside the wiring board, not the back surface of the wiring board.
  • a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, an electrode 46y, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, an electrode 46y, and a ground
  • the balanced signal terminal side ground electrode composed of the electrode 47 a is shared as the electrode 46 y of the third electrode layer 46 and the ground electrode 47 a of the fourth electrode layer 47.
  • FIG. 26 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the third comparative example.
  • the common mode isolation in the transmission frequency band (1850 MHz to 1910 MHz) of the surface acoustic wave duplexer according to each of the first example and the first to third comparative examples is First embodiment: 55.4 dB, First comparative example: 54.0 dB, Second comparative example: 52.6 dB, Third comparative example: 42.9 dB, Met.
  • the unbalanced signal terminal side ground electrode which is the path through which the unbalanced signal flows to the ground
  • the balanced signal terminal side ground electrode which is the path through which the balanced signal flows to the ground
  • the common mode isolation can be increased by using the back surface 10b instead of the common part.
  • the unbalanced signal terminal side ground electrode that is the path through which the unbalanced signal flows to the ground and the path through which the balanced signal flows to the ground It can be seen that it is preferable to share a certain balanced signal terminal side ground electrode on the back surface 10b of the wiring board 10 and also share a transmitting side ground electrode, which is a path through which an unbalanced signal flows to the ground, on the back surface 10b.
  • the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode which are paths through which the unbalanced signal flows to the ground
  • the balanced signal terminal-side ground electrode which is a path through which the balanced signal flows to the ground.
  • the IDT electrodes 106 and 107 to which the first and second receiving-side signal terminals 103a and 103b are connected are floating electrodes (float electrodes) that are not connected to the ground. Therefore, the common mode isolation cannot be increased because the common mode signal hardly flows from the signal line through which the balanced signal is transmitted to the ground. Since the IDT electrodes 15A2 and 15B2 to which the reception-side signal terminals 22a and 22b are connected are connected to the ground, the common-mode signal easily flows from the signal line through which the balanced signal is transmitted to the ground. Isolation can be increased.
  • FIG. 27 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 28 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 29 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 30 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 28 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 29 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric
  • FIG. 31 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • 27 to 31 show a state in which the surface acoustic wave duplexer according to the second embodiment is seen through from the transmission surface acoustic wave filter chip 18 and the reception surface acoustic wave filter chip 19 side.
  • the surface acoustic wave duplexer of the present embodiment has substantially the same configuration as the surface acoustic wave duplexer 1 of the first embodiment except for the configuration of the wiring board 10.
  • an electrode 46z is arranged instead of the electrode 46b and the electrode 46e of the surface acoustic wave duplexer according to the first example, and the electrode 46z is replaced with the ground electrode 47a.
  • the ground electrodes 47b, 47c, 47d and the electrode 47e are disposed.
  • the ground electrode 47b is connected to the electrode 46g by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
  • the ground electrode 47c is connected to the electrode 46z by a via hole electrode 53z formed in the third dielectric layer 42.
  • the ground electrode 47d is connected to the electrode 46f by a plurality of via hole electrodes 53g formed in the third dielectric layer 42.
  • the electrode 47e is connected to the electrode 46a by a plurality of via hole electrodes 53i formed in the third dielectric layer 42.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are not connected to each other by the wiring board.
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46f, and the ground electrode 47d, the land electrodes 44k and 44h, the electrode 45h, the electrode 46g, and the ground electrode
  • the balanced signal terminal-side ground electrodes formed of 47b are not connected to each other by the wiring board 10.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board.
  • a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, an electrode 46z, and a ground electrode 47c, land electrodes 44k and 44h, an electrode 45h, an electrode 46g, and a ground
  • the balanced signal terminal side ground electrode composed of the electrode 47 b is not connected to each other by the wiring board 10.
  • the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode which are paths through which the unbalanced signal flows to the ground
  • the balanced signal terminal-side ground electrode which is the path through which the balanced signal flows to the ground
  • FIG. 32 shows the common mode isolation characteristics of the surface acoustic wave duplexer together with the common mode isolation characteristics of the surface acoustic wave duplexer 1 of the first embodiment.
  • the common mode isolation in the transmission frequency band (1850 MHz to 1910 MHz) of the surface acoustic wave duplexer according to the second example was 55.7 dB.
  • the unbalanced signal terminal side ground electrode, which is the path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is the path through which the balanced signal flows to the ground are connected to each other by the wiring board 10. Even if not, the unbalanced signal terminal side ground electrode, which is a path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is a path through which the balanced signal flows to the ground, are portions other than the back surface 10b of the wiring board 10. It can be seen that the common mode isolation can be increased in the same manner as in the case of commoning in the back surface 10b.
  • 2nd balanced signal terminal 15d ... Unbalanced signal terminal side ground terminal 15e, 15f ... Balanced signal terminal side ground terminal 16 ... Sealing resin layers 17a-17e ... Elasticity Surface wave resonator 18... Transmission side surface acoustic wave filter chip 19... Reception side surface acoustic wave filter Tape chip 18A, 19A ... Piezoelectric substrate 18B, 19B ... Electrode 21 ... Antenna terminal 22a ... First reception side signal terminal 22b ... Second reception side signal terminal 24 ... Transmission side signal terminal 26 ... Bump 33 ... Series arms 37a-37d ... parallel arm 40 ... first dielectric layer 41 ... second dielectric layer 42 ... third dielectric layer 44 ... first electrode layers 44a to 44l ...

Abstract

L'invention porte sur un filtre de dérivation d'ondes acoustiques avec une isolation de mode commun élevée. Le filtre de dérivation d'ondes acoustiques comporte un filtre d'émission configuré avec un filtre d'ondes acoustiques et un filtre de réception configuré avec un filtre d'ondes acoustiques à résonateur à couplage longitudinal de type équilibré avec une fonction de symétriseur. Une électrode de masse d'un côté de borne de signal déséquilibré et une électrode de masse d'un côté de borne de signal équilibré ne sont pas connectées sur une carte de câblage (10). L'électrode de masse du côté de borne de signal déséquilibré comprend une électrode de surface (44j), des électrodes (45g et 46f), et une électrode de masse (47d). L'électrode de masse du côté de borne de signal équilibré comprend des électrodes de surface (44k et 44h), une électrode (45h), une électrode (46g) et une électrode de masse (47b).
PCT/JP2011/077174 2011-02-24 2011-11-25 Filtre de dérivation d'ondes acoustiques WO2012114593A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-038422 2011-02-24
JP2011038422 2011-02-24

Publications (1)

Publication Number Publication Date
WO2012114593A1 true WO2012114593A1 (fr) 2012-08-30

Family

ID=46720396

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/077174 WO2012114593A1 (fr) 2011-02-24 2011-11-25 Filtre de dérivation d'ondes acoustiques

Country Status (1)

Country Link
WO (1) WO2012114593A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014061694A1 (fr) * 2012-10-19 2014-04-24 株式会社村田製作所 Filtre de dérivation d'antenne
WO2015016203A1 (fr) * 2013-08-02 2015-02-05 株式会社村田製作所 Duplexeur
JP2018023074A (ja) * 2016-08-05 2018-02-08 株式会社村田製作所 高周波モジュール及び弾性波フィルタの製造方法
US9935611B2 (en) 2014-04-11 2018-04-03 Murata Manufacturing Co., Ltd. Elastic wave filter device
US10530336B2 (en) 2015-06-24 2020-01-07 Murata Manufacturing Co., Ltd. Elastic wave filter, multiplexer, duplexer, high-frequency front end circuit, and communication device
CN114373669A (zh) * 2017-06-27 2022-04-19 佳能安内华股份有限公司 等离子体处理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005318307A (ja) * 2004-04-28 2005-11-10 Fujitsu Media Device Kk バランス出力型フィルタ
JP2006014296A (ja) * 2004-05-27 2006-01-12 Kyocera Corp 弾性表面波装置及び通信機器
JP2007142560A (ja) * 2005-11-15 2007-06-07 Fujitsu Media Device Kk 分波器
JP2008053922A (ja) * 2006-08-23 2008-03-06 Kyocera Corp 弾性表面波装置
WO2008146525A1 (fr) * 2007-05-28 2008-12-04 Murata Manufacturing Co., Ltd. Duplexeur et dispositif à onde élastique
WO2010052821A1 (fr) * 2008-11-04 2010-05-14 株式会社 村田製作所 Dispositif de filtrage d'ondes élastiques

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005318307A (ja) * 2004-04-28 2005-11-10 Fujitsu Media Device Kk バランス出力型フィルタ
JP2006014296A (ja) * 2004-05-27 2006-01-12 Kyocera Corp 弾性表面波装置及び通信機器
JP2007142560A (ja) * 2005-11-15 2007-06-07 Fujitsu Media Device Kk 分波器
JP2008053922A (ja) * 2006-08-23 2008-03-06 Kyocera Corp 弾性表面波装置
WO2008146525A1 (fr) * 2007-05-28 2008-12-04 Murata Manufacturing Co., Ltd. Duplexeur et dispositif à onde élastique
WO2010052821A1 (fr) * 2008-11-04 2010-05-14 株式会社 村田製作所 Dispositif de filtrage d'ondes élastiques

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014061694A1 (fr) * 2012-10-19 2014-04-24 株式会社村田製作所 Filtre de dérivation d'antenne
JPWO2014061694A1 (ja) * 2012-10-19 2016-09-05 株式会社村田製作所 アンテナ分波器
WO2015016203A1 (fr) * 2013-08-02 2015-02-05 株式会社村田製作所 Duplexeur
JP5862842B2 (ja) * 2013-08-02 2016-02-16 株式会社村田製作所 分波装置
CN105409121A (zh) * 2013-08-02 2016-03-16 株式会社村田制作所 分波装置
US9680446B2 (en) 2013-08-02 2017-06-13 Murata Manufacturing Co., Ltd. Demultiplexing apparatus with heat transfer via electrodes
US9935611B2 (en) 2014-04-11 2018-04-03 Murata Manufacturing Co., Ltd. Elastic wave filter device
DE112015001771B4 (de) 2014-04-11 2019-05-23 Murata Manufacturing Co., Ltd. Filtervorrichtung für elastische Wellen
US10530336B2 (en) 2015-06-24 2020-01-07 Murata Manufacturing Co., Ltd. Elastic wave filter, multiplexer, duplexer, high-frequency front end circuit, and communication device
JP2018023074A (ja) * 2016-08-05 2018-02-08 株式会社村田製作所 高周波モジュール及び弾性波フィルタの製造方法
CN114373669A (zh) * 2017-06-27 2022-04-19 佳能安内华股份有限公司 等离子体处理装置

Similar Documents

Publication Publication Date Title
JP4905614B1 (ja) 弾性波分波器
JP5781827B2 (ja) ラダーフィルタ、分波器及びモジュール
JP4868064B2 (ja) 弾性波分波器
JP4255959B2 (ja) バランスフィルタおよび分波器
JP5354028B2 (ja) 弾性表面波フィルタ装置
US9077311B2 (en) Acoustic filter and method of acoustic filter manufacture
US9236850B2 (en) Signal separation device
WO2012114593A1 (fr) Filtre de dérivation d'ondes acoustiques
JP5333403B2 (ja) 弾性表面波フィルタ装置
US9184728B2 (en) Elastic-wave filter device
US7868715B2 (en) Duplexer and communication apparatus using the same
EP2346166B1 (fr) Dispositif de filtre d'onde élastique et module comportant le dispositif de filtre d'onde élastique
WO2012046481A1 (fr) Dispositif de filtre à onde élastique
JP5423928B2 (ja) 弾性波装置
JP2012205215A (ja) 弾性表面波装置およびその製造方法
JP5010256B2 (ja) 弾性表面波装置及びこれを備えた通信装置
JP4207836B2 (ja) 弾性表面波分波器
JP5168360B2 (ja) 分波器
WO2012132093A1 (fr) Dispositif à ondes acoustiques

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11859308

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11859308

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP