WO2012114593A1 - Acoustic wave branching filter - Google Patents

Acoustic wave branching filter Download PDF

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Publication number
WO2012114593A1
WO2012114593A1 PCT/JP2011/077174 JP2011077174W WO2012114593A1 WO 2012114593 A1 WO2012114593 A1 WO 2012114593A1 JP 2011077174 W JP2011077174 W JP 2011077174W WO 2012114593 A1 WO2012114593 A1 WO 2012114593A1
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WO
WIPO (PCT)
Prior art keywords
electrode
signal terminal
side ground
terminal
acoustic wave
Prior art date
Application number
PCT/JP2011/077174
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French (fr)
Japanese (ja)
Inventor
高峰　裕一
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株式会社村田製作所
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Publication of WO2012114593A1 publication Critical patent/WO2012114593A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0023—Balance-unbalance or balance-balance networks
    • H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
    • H03H9/0047—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks
    • H03H9/0066—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically parallel
    • H03H9/0071—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically parallel the balanced terminals being on the same side of the tracks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices

Definitions

  • the present invention relates to an elastic wave duplexer.
  • the present invention relates to an acoustic wave duplexer including a longitudinally coupled resonator type acoustic wave filter.
  • an RF (Radio Frequency) circuit is used to simultaneously transmit and receive signals.
  • a duplexer is installed.
  • the duplexer is a duplexer including a transmission filter, a reception filter, and a matching circuit.
  • FIG. 33 is a schematic circuit diagram of the elastic wave duplexer 100 described in Patent Document 1.
  • the elastic wave duplexer 100 includes an antenna terminal 101, a transmission-side signal terminal 102, and first and second reception-side signal terminals 103a and 103b.
  • a transmission filter 104 is connected between the antenna terminal 101 and the transmission-side signal terminal 102.
  • the transmission filter 104 is configured by a ladder type elastic wave filter.
  • a reception filter 105 is connected between the antenna terminal 101 and the first and second reception-side signal terminals 103a and 103b.
  • the reception filter 105 is constituted by a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function. Therefore, the first and second receiving signal terminals 103a and 103b are first and second balanced signal terminals.
  • the first reception-side signal terminal 103 a and the second reception-side signal terminal 103 b are connected to the same IDT electrodes 106 and 107 of the reception filter 105.
  • the first receiving signal terminal 103a is connected to the comb-like electrodes 106a and 107a on one side of the IDT electrodes 106 and 107.
  • the second receiving side signal terminal 103b is connected to the comb-like electrodes 106b and 107b on the other side of the IDT electrodes 106 and 107. Therefore, the IDT electrodes 106 and 107 to which the first and second receiving signal terminals 103a and 103b are connected are floating electrodes (float electrodes) that are not connected to the ground.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide an elastic wave demultiplexer including a longitudinally coupled resonator type elastic wave filter, which has large common mode isolation. Is to provide a vessel.
  • the first acoustic wave duplexer includes a transmission filter and a reception filter.
  • the transmission filter is constituted by an elastic wave filter.
  • the reception filter is composed of a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function.
  • a wiring board and at least one elastic wave filter chip are provided.
  • the wiring board has a die attach surface and a back surface.
  • the elastic wave filter chip is mounted on the die attach surface.
  • the acoustic wave filter chip has a piezoelectric substrate and electrodes that constitute a reception filter. The electrodes constituting the reception filter are formed on the piezoelectric substrate.
  • the electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes.
  • the unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate.
  • the plurality of IDT electrodes include an unbalanced signal terminal side IDT electrode, a first balanced signal terminal side IDT electrode, and a second balanced signal terminal side IDT electrode.
  • the unbalanced signal terminal side IDT electrode has a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal side ground terminal.
  • the first balanced signal terminal-side IDT electrode includes a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the second balanced signal terminal-side IDT electrode has a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the wiring board has an unbalanced signal terminal side ground electrode and a balanced signal terminal side ground electrode.
  • the unbalanced signal terminal side ground electrode is connected to the unbalanced signal terminal side ground terminal.
  • the balanced signal terminal side ground electrode is connected to the balanced signal terminal side ground terminal.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are not connected to each other on the wiring board.
  • the second acoustic wave duplexer includes a transmission filter and a reception filter.
  • the transmission filter is constituted by an elastic wave filter.
  • the reception filter is composed of a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function.
  • a wiring board and at least one elastic wave filter chip are provided.
  • the wiring board has a die attach surface and a back surface.
  • the elastic wave filter chip is mounted on the die attach surface.
  • the acoustic wave filter chip has a piezoelectric substrate and electrodes that constitute a reception filter. The electrodes constituting the reception filter are formed on the piezoelectric substrate.
  • the electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes.
  • the unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate.
  • the plurality of IDT electrodes include an unbalanced signal terminal side IDT electrode, a first balanced signal terminal side IDT electrode, and a second balanced signal terminal side IDT electrode.
  • the unbalanced signal terminal side IDT electrode has a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal side ground terminal.
  • the first balanced signal terminal-side IDT electrode includes a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the second balanced signal terminal-side IDT electrode has a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal.
  • the wiring board has an unbalanced signal terminal side ground electrode and a balanced signal terminal side ground electrode.
  • the unbalanced signal terminal side ground electrode is connected to the unbalanced signal terminal side ground terminal.
  • the balanced signal terminal side ground electrode is connected to the balanced signal terminal side ground terminal.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are shared on the back surface of the wiring board.
  • the acoustic wave filter chip constitutes a reception-side acoustic wave filter chip having an electrode that constitutes a reception filter, and a transmission filter.
  • a transmission-side acoustic wave filter chip having an electrode to be transmitted.
  • the transmission filter is configured by a ladder type acoustic wave filter.
  • the electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator.
  • the acoustic wave resonator constituting the parallel arm resonator is composed of comb-like electrodes connected to the acoustic wave resonator constituting the series arm resonator and comb teeth connected to the transmission-side ground terminal.
  • an IDT electrode having a shape electrode.
  • the wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal. The transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board.
  • the transmission filter is configured by a ladder-type elastic wave filter.
  • the electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator.
  • the acoustic wave resonator constituting the parallel arm resonator is composed of comb-like electrodes connected to the acoustic wave resonator constituting the series arm resonator and comb teeth connected to the transmission-side ground terminal.
  • an IDT electrode having a shape electrode.
  • the wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board.
  • the “elastic wave” includes a surface acoustic wave and a boundary acoustic wave.
  • an acoustic wave duplexer including a longitudinally coupled resonator type acoustic wave filter and having a large common mode isolation.
  • FIG. 1 is a schematic circuit diagram of an elastic wave duplexer according to a first embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 3 is a schematic perspective plan view of the transmission-side elastic wave filter chip in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 4 is a schematic perspective plan view of the reception-side surface acoustic wave filter chip in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 5 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 6 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 7 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 9 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention.
  • FIG. 10 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 11 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 12 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 13 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 14 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first comparative example.
  • FIG. 15 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 16 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 17 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 18 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 19 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second comparative example.
  • FIG. 20 is a graph showing common mode isolation characteristics of the elastic wave duplexer according to each of the first example and the first and second comparative examples.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 23 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 24 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second
  • FIG. 25 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the third comparative example.
  • FIG. 26 is a graph showing the common mode isolation characteristics of the elastic wave duplexer according to each of the first example and the third comparative example.
  • FIG. 27 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 28 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 29 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 30 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 31 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention.
  • FIG. 32 is a graph showing the common mode isolation characteristics of the elastic wave duplexer according to each of the first and second embodiments.
  • FIG. 33 is a schematic circuit diagram of the elastic wave duplexer described in Patent Document 1.
  • the elastic wave duplexer according to the present invention is not limited to the surface acoustic wave duplexer 1.
  • the elastic wave duplexer according to the present invention may be another type of elastic wave duplexer such as a triplexer.
  • the elastic wave duplexer according to the present invention may be a boundary acoustic wave duplexer using a boundary acoustic wave.
  • the surface acoustic wave duplexer 1 is mounted on an RF circuit such as a mobile phone corresponding to a CDMA system such as UMTS.
  • the surface acoustic wave duplexer 1 of the present embodiment is specifically a duplexer corresponding to UMTS-BAND2. Note that the transmission frequency band of UMTS-BAND2 is 1850 MHz to 1910 MHz. The reception frequency band of UMTS-BAND2 is 1930 MHz to 1990 MHz.
  • FIG. 1 is a schematic circuit diagram of a surface acoustic wave duplexer 1 according to this embodiment. First, the circuit configuration of the surface acoustic wave duplexer 1 will be described with reference to FIG.
  • the surface acoustic wave duplexer 1 includes an antenna Ant. Antenna terminal 21, a transmission side signal terminal 24, and first and second reception side signal terminals 22a and 22b.
  • a transmission filter 14 is connected between the antenna terminal 21 and the transmission-side signal terminal 24.
  • a reception filter 15 is connected between the antenna terminal 21 and the first and second reception-side signal terminals 22a and 22b.
  • a matching circuit made up of an inductor L1 is connected between the connection point between the antenna terminal 21 and the antenna terminal 21 and the ground.
  • the inductor L1 is constituted by a chip inductor and is mounted on the RF circuit together with the surface acoustic wave duplexer 1.
  • the surface acoustic wave duplexer 1 may include a matching circuit. In that case, the matching circuit is connected between one or both of the transmission filter 14 and the reception filter 15 and the antenna terminal 21.
  • the transmission filter 14 is a ladder type surface acoustic wave filter.
  • the transmission filter 14 has an output terminal 14a and an input terminal 14b.
  • the output terminal 14 a is connected to the antenna terminal 21.
  • the input terminal 14 b is connected to the transmission side signal terminal 24.
  • the transmission filter 14 has a serial arm 33 that connects the input terminal 14b and the output terminal 14a.
  • series arm resonators S1, S2, S3, and S4 are connected in series.
  • Each of the series arm resonators S1, S2, S3, and S4 is composed of a plurality of surface acoustic wave resonators that function as one resonator.
  • the power durability of the transmission filter 14 can be improved.
  • each of the series arm resonators S1, S2, S3, and S4 may be composed of one surface acoustic wave resonator.
  • a capacitor C is connected in parallel to the series arm resonator S2.
  • the capacitor C is composed of a pair of comb-like electrodes that are interleaved with each other.
  • the transmission filter 14 has parallel arms 37a to 37d connected between the serial arm 33 and the ground.
  • Parallel arm resonators P1, P2, P3, and P4 are provided in each of the parallel arms 37a to 37d.
  • Each of the parallel arm resonators P1, P2, P3, and P4 includes a plurality of surface acoustic wave resonators that function as a single resonator.
  • the power durability of the transmission filter 14 can be improved.
  • each of the parallel arm resonators P1, P2, P3, and P4 may be composed of one surface acoustic wave resonator.
  • the transmission filter 14 includes transmission-side ground terminals 14c and 14d.
  • the transmission side ground terminal 14c is connected to the parallel arms 37a to 37c. That is, the parallel arms 37a to 37c are connected to the ground via the transmission side ground terminal 14c.
  • the transmission side ground terminal 14d is connected to the parallel arm 37d. That is, the parallel arm 37d is connected to the ground via the transmission-side ground terminal 14d.
  • An inductor L2 is connected between the parallel arm resonators P1, P2, P3 and the ground.
  • An inductor L3 is connected between the parallel arm resonator P4 and the ground.
  • the inductor L2 is connected between the transmission-side ground terminal 14c and the ground.
  • An inductor L3 is connected between the transmission-side ground terminal 14d and the ground.
  • the surface acoustic wave resonator constituting the parallel arm resonator P1 includes a comb-like electrode connected to the surface acoustic wave resonators constituting the series arm resonators S1 and S2, and a transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode.
  • the surface acoustic wave resonator constituting the parallel arm resonator P2 includes a comb-like electrode connected to the surface acoustic wave resonators constituting the series arm resonators S2 and S3, and a transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode.
  • the surface acoustic wave resonator constituting the parallel arm resonator P3 includes comb-like electrodes connected to the surface acoustic wave resonators constituting the series arm resonators S3 and S4, and the transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode.
  • the surface acoustic wave resonator constituting the parallel arm resonator P4 is connected to the comb-like electrode connected to the surface acoustic wave resonator constituting the series arm resonator S4 and the transmission-side ground terminal 14d. And an IDT electrode having a comb-like electrode.
  • the reception filter 15 is composed of a balanced longitudinally coupled resonator type surface acoustic wave filter having a balanced-unbalanced conversion function.
  • the reception filter 15 includes an unbalanced signal terminal 15a and first and second balanced signal terminals 15b and 15c.
  • the unbalanced signal terminal 15a is connected to the antenna terminal 21.
  • the first balanced signal terminal 15b is connected to the first receiving signal terminal 22a.
  • the second balanced signal terminal 15c is connected to the second receiving signal terminal 22b.
  • the impedance of the unbalanced signal terminal 15a is 50 ⁇ .
  • the impedances of the first and second balanced signal terminals 15b and 15c are 100 ⁇ .
  • the reception filter 15 includes a first longitudinally coupled resonator type surface acoustic wave filter element 15A, a second longitudinally coupled resonator type surface acoustic wave filter element 15B, and surface acoustic wave resonators 17a to 17e.
  • the first longitudinally coupled resonator type surface acoustic wave filter element 15A is connected between the unbalanced signal terminal 15a and the first balanced signal terminal 15b.
  • the second longitudinally coupled resonator type surface acoustic wave filter element 15B is connected between the unbalanced signal terminal 15a and the second balanced signal terminal 15c.
  • the first longitudinally coupled resonator type surface acoustic wave filter element 15A is provided with IDT electrodes 15A1, 15A2, and 15A3 arranged along the surface acoustic wave propagation direction, and these three IDT electrodes 15A1, 15A2, and 15A3. And a pair of reflectors 15A4 and 15A5 disposed on both sides of the surface acoustic wave propagation direction in the region. That is, the first longitudinally coupled resonator type surface acoustic wave filter element 15A is a 3IDT type longitudinally coupled resonator type surface acoustic wave filter element.
  • the comb-like electrodes on one side of the IDT electrodes 15A1 and 15A3 located on both sides of the surface acoustic wave propagation direction are connected to the unbalanced signal terminal 15a, and the comb-like electrode on the other side is connected to the ground. Has been.
  • the comb-like electrode on one side of the IDT electrode 15A2 located in the center of the surface acoustic wave propagation direction is connected to the ground, and the comb-like electrode on the other side is connected to the first balanced signal terminal 15b.
  • a surface acoustic wave resonator 17d is connected between the connection point between the IDT electrode 15A2 and the first balanced signal terminal 15b and the ground.
  • the surface acoustic wave resonator 17d includes one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, the surface acoustic wave resonator 17d is a 1-port surface acoustic wave resonator.
  • the second longitudinally coupled resonator type surface acoustic wave filter element 15B is provided with IDT electrodes 15B1, 15B2, and 15B3 arranged along the surface acoustic wave propagation direction, and these three IDT electrodes 15B1, 15B2, and 15B3. And a pair of reflectors 15B4 and 15B5 disposed on both sides of the surface acoustic wave propagation direction in the region. That is, the second longitudinally coupled resonator type surface acoustic wave filter element 15B is a 3IDT type longitudinally coupled resonator type surface acoustic wave filter element.
  • the comb-like electrodes on one side of the IDT electrodes 15B1 and 15B3 located on both sides of the surface acoustic wave propagation direction are connected to the unbalanced signal terminal 15a, and the comb-like electrode on the other side is connected to the ground. Has been.
  • the comb-like electrode on one side of the IDT electrode 15B2 located in the center of the surface acoustic wave propagation direction is connected to the ground, and the comb-like electrode on the other side is connected to the second balanced signal terminal 15c.
  • a surface acoustic wave resonator 17e is connected between the connection point between the IDT electrode 15B2 and the second balanced signal terminal 15c and the ground.
  • the surface acoustic wave resonator 17e includes one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, the surface acoustic wave resonator 17e is a 1-port surface acoustic wave resonator.
  • the surface acoustic wave propagation direction of the first longitudinally coupled resonator type surface acoustic wave filter element 15A is used in order to invert the phase.
  • the IDT electrodes 15B1 and 15B3 located on both sides of the surface acoustic wave propagation direction of the second longitudinally coupled resonator type surface acoustic wave filter element 15B are inverted with respect to the IDT electrodes 15A1 and 15A3 located on both sides of Has been.
  • Other configurations are the same between the first longitudinally coupled resonator type surface acoustic wave filter element 15A and the second longitudinally coupled resonator type surface acoustic wave filter element 15B.
  • the surface acoustic wave resonators 17a to 17c are connected in series between the unbalanced signal terminal 15a and the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A and 15B.
  • Each of the surface acoustic wave resonators 17a to 17c has one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, each of the surface acoustic wave resonators 17a to 17c is a one-port surface acoustic wave resonator.
  • the surface acoustic wave resonators 17 a to 17 c are provided to adjust the phase with the transmission filter 14.
  • the surface acoustic wave resonators 17 a to 17 c have a resonance frequency located in the pass band of the reception filter 15 and an anti-resonance frequency higher than the pass band of the reception filter 15 and located outside the pass band. It is configured as follows.
  • the surface acoustic wave resonators 17 d and 17 e are provided to increase the out-of-band attenuation of the reception filter 15.
  • the surface acoustic wave resonators 17d and 17e are configured such that the resonance frequency is lower than the pass band of the reception filter 15, is located outside the pass band, and the anti-resonance frequency is located in the pass band. Yes.
  • FIG. 2 is a schematic cross-sectional view of the surface acoustic wave duplexer 1 according to the present embodiment. Next, a specific configuration of the surface acoustic wave duplexer 1 of the present embodiment will be described with reference mainly to FIG.
  • the surface acoustic wave duplexer 1 includes a wiring board 10, a transmission-side surface acoustic wave filter chip 18, and a reception-side surface acoustic wave filter chip 19.
  • the transmission-side surface acoustic wave filter chip 18 is formed with portions of the transmission filter 14 excluding the inductors L2 and L3.
  • the inductors L2 and L3 are provided on the wiring board 10.
  • a reception filter 15 is formed on the reception-side surface acoustic wave filter chip 19.
  • FIG. 3 is a schematic perspective plan view of the transmission-side surface acoustic wave filter chip 18 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 3 shows a state where the transmitting surface acoustic wave filter chip 18 is seen through from above the surface acoustic wave duplexer 1.
  • the transmission-side surface acoustic wave filter chip 18 is formed on the piezoelectric substrate 18A, the piezoelectric substrate 18A, and the IDT electrodes, reflectors, and capacitors that form the surface acoustic wave resonator.
  • On the piezoelectric substrate 18A there are an output terminal 14a to which the series arm resonator S1 is connected, an input terminal 14b to which the series arm resonator S4 and the parallel arm resonator P4 are connected, and parallel arm resonators P1 to P3.
  • a connected transmission-side ground terminal 14c and a transmission-side ground terminal 14d to which the parallel arm resonator P4 is connected are arranged.
  • the electrode 18B includes an output terminal 14a, an input terminal 14b, a transmission-side ground terminal 14c, a transmission-side ground terminal 14d, and dummy terminals 14e and 14f.
  • the dummy terminals 14e and 14f are provided to increase the bonding strength between the transmission-side surface acoustic wave filter chip 18 and the wiring board 10.
  • FIG. 4 is a schematic perspective plan view of the reception-side surface acoustic wave filter chip 19 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 4 shows a state in which the receiving surface acoustic wave filter chip 19 is seen through from above the surface acoustic wave duplexer 1.
  • the receiving surface acoustic wave filter chip 19 is formed on a piezoelectric substrate 19A and a piezoelectric substrate 19A, and the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A. 15B and IDT electrodes constituting the surface acoustic wave resonators 17a to 17e, and an electrode 19B including a reflector, wiring, and the like. That is, the electrode 19B is an electrode that constitutes the reception filter 15.
  • On the piezoelectric substrate 19A there are unbalanced signal terminal 15a, first and second balanced signal terminals 15b and 15c, unbalanced signal terminal side ground terminal 15d, and balanced signal terminal side ground terminals 15e and 15f. Has been placed.
  • the electrode 19B includes an unbalanced signal terminal 15a, first and second balanced signal terminals 15b and 15c, an unbalanced signal terminal side ground terminal 15d, and balanced signal terminal side ground terminals 15e and 15f.
  • the unbalanced signal terminal side ground terminal 15d is connected to the comb-like electrode on one side of the IDT electrodes 15A1, 15A3, 15B1, and 15B3.
  • the balanced signal terminal side ground terminal 15e is connected to the comb-like electrodes on one side of the IDT electrodes 15A2 and 15B2.
  • the balanced signal terminal side ground terminal 15f is connected to one comb-like electrode of the IDT electrode constituting the surface acoustic wave resonators 17d and 17e.
  • the IDT electrodes 15A1, 15A3, 15B1, and 15B3 are unbalanced having comb-like electrodes connected to the unbalanced signal terminal 15a and comb-like electrodes connected to the unbalanced signal terminal side ground terminal 15d. It is a balanced signal terminal side IDT electrode.
  • the IDT electrode 15A2 is a first balanced signal terminal side IDT having a comb-like electrode connected to the first balanced signal terminal 15b and a comb-like electrode connected to the balanced signal terminal side ground terminal 15e. Electrode.
  • the IDT electrodes constituting the surface acoustic wave resonator 17d are comb-like electrodes connected to the first balanced signal terminal 15b, and comb-like electrodes connected to the balanced signal terminal side ground terminal 15f.
  • the IDT electrode 15B2 is a second balanced signal terminal side IDT having a comb-like electrode connected to the second balanced signal terminal 15c and a comb-like electrode connected to the balanced signal terminal side ground terminal 15e. Electrode.
  • the IDT electrodes constituting the surface acoustic wave resonator 17e are comb-like electrodes connected to the second balanced signal terminal 15c, and comb-like electrodes connected to the balanced signal terminal side ground terminal 15f. It is the 2nd balanced signal terminal side IDT electrode which has.
  • the unbalanced signal terminal side ground terminal 15d and the balanced signal terminal side ground terminals 15e, 15f are not connected to each other on the piezoelectric substrate 19A.
  • piezoelectric substrates 18A and 19A include piezoelectric single crystal substrates such as a LiNbO 3 substrate and a LiTaO 3 substrate.
  • the electrodes 18B and 19B can be formed of a metal such as aluminum or an alloy, for example.
  • the electrodes 18B and 19B may be configured by a stacked body of a plurality of metal layers, for example.
  • the wiring board 10 has a die attach surface 10a and a back surface 10b.
  • the transmission-side surface acoustic wave filter chip 18 and the reception-side surface acoustic wave filter chip 19 are flip-chip mounted by bumps 26 on the die attach surface 10a.
  • a sealing resin layer 16 is formed on the die attach surface 10 a so as to cover the transmission-side surface acoustic wave filter chip 18 and the reception-side surface acoustic wave filter chip 19. That is, the surface acoustic wave duplexer 1 of the present embodiment is a CSP (Chip Size Package) type acoustic wave duplexer.
  • CSP Chip Size Package
  • the wiring board 10 is formed by alternately laminating dielectric layers and electrode layers.
  • the wiring substrate 10 is constituted by a laminated body of first to third dielectric layers 40 to 42 and first to fourth electrode layers 44 to 47.
  • the first electrode layer 44 is disposed on the first dielectric layer 40.
  • the second electrode layer 45 is disposed between the first dielectric layer 40 and the second dielectric layer 41.
  • the third electrode layer 46 is disposed between the second dielectric layer 41 and the third dielectric layer 42.
  • the fourth electrode layer 47 is disposed under the third dielectric layer 42.
  • Each of the first to third dielectric layers 40 to 42 can be made of, for example, a resin or ceramics such as alumina. That is, the wiring board 10 may be a printed wiring multilayer board made of resin or a ceramic multilayer board.
  • the wiring board is configured by a laminate of three dielectric layers and four electrode layers.
  • the number of dielectric layers and the number of electrode layers of the wiring board are not particularly limited.
  • FIG. 5 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 6 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 7 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment.
  • FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the
  • FIG. 9 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. 5 to 9 show a state in which the surface acoustic wave duplexer 1 is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • the first electrode layer 44 is a land electrode layer, and the first electrode layer 44 and the first dielectric layer 40 constitute a die attach surface 10 a of the wiring substrate 10. .
  • the first electrode layer 44 is composed of land electrodes 44a to 44l.
  • the second electrode layer 45 is composed of electrodes 45a to 45j.
  • the third electrode layer 46 is composed of electrodes 46a to 46i.
  • a resist layer 60 is formed on the back surface 10b.
  • the resist layer 60 covers a part of the fourth electrode layer 47, and includes the antenna terminal 21, the transmission side signal terminal 24, the first and second reception side signal terminals 22a and 22b, and the ground electrode 47a. Is formed.
  • the output terminal 14a of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44d shown in FIG.
  • the land electrode 44d is connected to the electrode 45d shown in FIG. 6 by a via hole electrode 51a formed in the first dielectric layer 40.
  • the unbalanced signal terminal 15a of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44g shown in FIG.
  • the land electrode 44g is connected to the electrode 45d by a via hole electrode 51b formed in the first dielectric layer 40.
  • the electrode 45d is connected to the electrode 46d shown in FIG. 7 by a via hole electrode 52a formed in the second dielectric layer 41.
  • the electrode 46d is connected to the antenna terminal 21 shown in FIGS. 1, 8, and 9 by a via-hole electrode 53a formed in the third dielectric layer.
  • the input terminal 14b of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44c shown in FIG.
  • the land electrode 44c is connected to the electrode 45c shown in FIG. 6 by a via hole electrode 51c formed in the first dielectric layer 40.
  • the electrode 45c is connected to the electrode 46c shown in FIG. 7 by a via hole electrode 52b formed in the second dielectric layer 41.
  • the electrode 46c is connected to the transmission-side signal terminal 24 shown in FIGS. 1, 8, and 9 by a via-hole electrode 53b formed in the third dielectric layer 42.
  • the transmission-side ground terminal 14c of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44b shown in FIG.
  • the land electrode 44b is connected to the electrode 45b shown in FIG. 6 by a via hole electrode 51d formed in the first dielectric layer 40.
  • the electrode 45b is connected to the electrode 46b shown in FIG. 7 by a via hole electrode 52c formed in the second dielectric layer 41.
  • An inductor L2 is constituted by the electrode 45b and the electrode 46b.
  • the electrode 46b is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a via-hole electrode 53c formed in the third dielectric layer.
  • the transmission-side ground terminal 14d of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44f shown in FIG.
  • the land electrode 44f is connected to the electrode 45f shown in FIG. 6 by a via hole electrode 51e formed in the first dielectric layer 40.
  • the electrode 45f is connected to the electrode 46e shown in FIG. 7 by a via hole electrode 52d formed in the second dielectric layer 41.
  • An inductor L3 is constituted by the electrode 45f and the electrode 46e.
  • the electrode 46e is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a via-hole electrode 53d formed in the third dielectric layer. That is, the land electrodes 44b and 44f, the electrodes 45b and 45f, the electrodes 46b and 46e, and the ground electrode 47a are transmission-side ground electrodes connected to the transmission-side ground terminals 14c and 14d.
  • the first balanced signal terminal 15b of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44i shown in FIG.
  • the land electrode 44i is connected to the electrode 45j shown in FIG. 6 by a via hole electrode 51f formed in the first dielectric layer 40.
  • the electrode 45j is connected to the electrode 46i shown in FIG. 7 by a via hole electrode 52e formed in the second dielectric layer 41.
  • the electrode 46i is connected to the first reception-side signal terminal 22a shown in FIGS. 1, 8, and 9 by a via-hole electrode 53e formed in the third dielectric layer.
  • the second balanced signal terminal 15c of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44l shown in FIG.
  • the land electrode 44l is connected to the electrode 45i shown in FIG. 6 by a via hole electrode 51g formed in the first dielectric layer 40.
  • the electrode 45i is connected to the electrode 46h shown in FIG. 7 by a via hole electrode 52f formed in the second dielectric layer 41.
  • the electrode 46h is connected to the second reception-side signal terminal 22b shown in FIGS. 1, 8, and 9 by a via-hole electrode 53f formed in the third dielectric layer 42.
  • the unbalanced signal terminal side ground terminal 15d of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44j shown in FIG.
  • the land electrode 44j is connected to the electrode 45g shown in FIG. 6 by a via hole electrode 51h formed in the first dielectric layer 40.
  • the electrode 45g is connected to the electrode 46f shown in FIG. 7 by a plurality of via hole electrodes 52g formed in the second dielectric layer 41.
  • the electrode 46f is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53g formed in the third dielectric layer 42. That is, the land electrode 44j, the electrode 45g, the electrode 46f, and the ground electrode 47a are unbalanced signal terminal side ground electrodes connected to the unbalanced signal terminal side ground terminal 15d.
  • the balanced signal terminal side ground terminal 15e of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44h shown in FIG.
  • the land electrode 44h is connected to the electrode 45h shown in FIG. 6 by a via hole electrode 51i formed in the first dielectric layer 40.
  • the electrode 45h is connected to the electrode 46g shown in FIG. 7 by a plurality of via hole electrodes 52h formed in the second dielectric layer 41.
  • the electrode 46g is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
  • the balanced signal terminal side ground terminal 15f of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44k shown in FIG.
  • the land electrode 44k is connected to the electrode 45h shown in FIG. 6 by a via hole electrode 51j formed in the first dielectric layer 40.
  • the electrode 45h is connected to the electrode 46g shown in FIG. 7 by a plurality of via hole electrodes 52h formed in the second dielectric layer 41.
  • the electrode 46g is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
  • the land electrodes 44k and 44h, the electrode 45h, the electrode 46g, and the ground electrode 47a are balanced signal terminal side ground electrodes connected to the balanced signal terminal side ground terminals 15e and 15f.
  • the dummy terminal 14e of the transmission filter 14 shown in FIG. 3 is connected to the land electrode 44a shown in FIG.
  • the land electrode 44 a is connected to the electrode 45 a shown in FIG. 6 by a via hole electrode 51 k formed in the first dielectric layer 40.
  • the electrode 45a is connected to the electrode 46a shown in FIG. 7 by a via hole electrode 52i formed in the second dielectric layer 41.
  • the electrode 46a is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53i formed in the third dielectric layer.
  • the dummy terminal 14f of the transmission filter 14 shown in FIG. 3 is connected to the land electrode 44e shown in FIG.
  • the land electrode 44e is connected to the electrode 45e shown in FIG. 6 by a via hole electrode 51l formed in the first dielectric layer 40.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are shared on the back surface of the wiring board.
  • an unbalanced signal terminal side ground electrode including a land electrode 44j, an electrode 45g, an electrode 46f, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, an electrode 46g, and a ground electrode
  • the ground signal terminal side ground electrode composed of 47 a is shared as the ground electrode 47 a on the back surface 10 b of the wiring board 10.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board.
  • a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, electrodes 46b and 46e, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, and an electrode 46g
  • the balanced signal terminal side ground electrode composed of the ground electrode 47 a is shared as the ground electrode 47 a on the back surface 10 b of the wiring substrate 10.
  • the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode which are paths through which the unbalanced signal flows to the ground
  • the balanced signal terminal-side ground electrode which is the path through which the balanced signal flows to the ground
  • a surface acoustic wave duplexer having a configuration substantially similar to that of the surface acoustic wave duplexer 1 according to the first embodiment was manufactured.
  • the common mode isolation characteristics of the surface acoustic wave duplexer according to the first embodiment are shown in FIGS.
  • the surface acoustic wave duplexer according to each of the first to third comparative examples has substantially the same configuration as the surface acoustic wave duplexer according to the first embodiment except for the wiring board 10.
  • FIG. 10 to 14 show the configuration of the wiring board 10 in the first comparative example.
  • FIG. 10 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 11 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 12 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 10 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 11 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface
  • FIG. 13 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. However, in FIG. 13, drawing of the resist layer 60 is omitted.
  • FIG. 14 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. 10 to 14 show a state in which the surface acoustic wave duplexer according to the first comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • an electrode 46x is arranged instead of the electrode 46f and the electrode 46g of the surface acoustic wave duplexer according to the first embodiment.
  • the electrode 46x is connected to the ground electrode 47a shown in FIGS. 13 and 14 by a plurality of via hole electrodes 53x formed in the third dielectric layer 42. Therefore, in the first comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. .
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46x, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45h
  • the balanced signal terminal side ground electrode composed of the electrode 46x and the ground electrode 47a is shared as the electrode 46x of the third electrode layer 46 and the ground electrode 47a of the fourth electrode layer 47.
  • FIG. 20 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the first comparative example.
  • FIG. 15 to FIG. 19 show the configuration of the wiring board 10 in the second comparative example.
  • FIG. 15 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 16 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 17 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 15 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 16 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the
  • FIG. 18 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. However, in FIG. 18, the drawing of the resist layer 60 is omitted.
  • FIG. 19 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. 15 to 19 show a state in which the surface acoustic wave duplexer according to the second comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • an electrode 45x is disposed in place of the electrode 45g and the electrode 45h of the surface acoustic wave duplexer according to the first embodiment, and the electrode 46f and the electrode An electrode 46x is disposed instead of 46g.
  • the electrode 45x is connected to the electrode 46x by a plurality of via hole electrodes 52x formed in the second dielectric layer 41.
  • the electrode 46x is connected to the ground electrode 47a shown in FIGS. 18 and 19 by a plurality of via hole electrodes 53x formed in the third dielectric layer.
  • the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. .
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45x, the electrode 46x, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45x
  • the balanced signal terminal side ground electrode composed of the electrode 46x and the ground electrode 47a includes the electrode 45x of the second electrode layer 45, the electrode 46x of the third electrode layer 46, and the ground electrode 47a of the fourth electrode layer 47.
  • FIG. 20 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the second comparative example.
  • FIG. 21 to 25 show the configuration of the wiring board 10 in the third comparative example.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 23 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 21 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example.
  • FIG. 22 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface
  • FIG. 24 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. However, in FIG. 24, drawing of the resist layer 60 is omitted.
  • FIG. 25 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. 21 to 25 show a state in which the surface acoustic wave duplexer according to the third comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
  • an electrode 46y is used. Is arranged.
  • the electrode 46y is connected to the ground electrode 47a shown in FIGS. 24 and 25 by a plurality of via hole electrodes 53y formed in the third dielectric layer. Therefore, in the third comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. .
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46y, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45h
  • the balanced signal terminal side ground electrode composed of the electrode 46y and the ground electrode 47a is shared as the electrode 46y of the third electrode layer 46 and the ground electrode 47a of the fourth electrode layer 47.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared in the electrode layer disposed inside the wiring board, not the back surface of the wiring board.
  • a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, an electrode 46y, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, an electrode 46y, and a ground
  • the balanced signal terminal side ground electrode composed of the electrode 47 a is shared as the electrode 46 y of the third electrode layer 46 and the ground electrode 47 a of the fourth electrode layer 47.
  • FIG. 26 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the third comparative example.
  • the common mode isolation in the transmission frequency band (1850 MHz to 1910 MHz) of the surface acoustic wave duplexer according to each of the first example and the first to third comparative examples is First embodiment: 55.4 dB, First comparative example: 54.0 dB, Second comparative example: 52.6 dB, Third comparative example: 42.9 dB, Met.
  • the unbalanced signal terminal side ground electrode which is the path through which the unbalanced signal flows to the ground
  • the balanced signal terminal side ground electrode which is the path through which the balanced signal flows to the ground
  • the common mode isolation can be increased by using the back surface 10b instead of the common part.
  • the unbalanced signal terminal side ground electrode that is the path through which the unbalanced signal flows to the ground and the path through which the balanced signal flows to the ground It can be seen that it is preferable to share a certain balanced signal terminal side ground electrode on the back surface 10b of the wiring board 10 and also share a transmitting side ground electrode, which is a path through which an unbalanced signal flows to the ground, on the back surface 10b.
  • the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode which are paths through which the unbalanced signal flows to the ground
  • the balanced signal terminal-side ground electrode which is a path through which the balanced signal flows to the ground.
  • the IDT electrodes 106 and 107 to which the first and second receiving-side signal terminals 103a and 103b are connected are floating electrodes (float electrodes) that are not connected to the ground. Therefore, the common mode isolation cannot be increased because the common mode signal hardly flows from the signal line through which the balanced signal is transmitted to the ground. Since the IDT electrodes 15A2 and 15B2 to which the reception-side signal terminals 22a and 22b are connected are connected to the ground, the common-mode signal easily flows from the signal line through which the balanced signal is transmitted to the ground. Isolation can be increased.
  • FIG. 27 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 28 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 29 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 30 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 28 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • FIG. 29 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric
  • FIG. 31 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment.
  • 27 to 31 show a state in which the surface acoustic wave duplexer according to the second embodiment is seen through from the transmission surface acoustic wave filter chip 18 and the reception surface acoustic wave filter chip 19 side.
  • the surface acoustic wave duplexer of the present embodiment has substantially the same configuration as the surface acoustic wave duplexer 1 of the first embodiment except for the configuration of the wiring board 10.
  • an electrode 46z is arranged instead of the electrode 46b and the electrode 46e of the surface acoustic wave duplexer according to the first example, and the electrode 46z is replaced with the ground electrode 47a.
  • the ground electrodes 47b, 47c, 47d and the electrode 47e are disposed.
  • the ground electrode 47b is connected to the electrode 46g by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
  • the ground electrode 47c is connected to the electrode 46z by a via hole electrode 53z formed in the third dielectric layer 42.
  • the ground electrode 47d is connected to the electrode 46f by a plurality of via hole electrodes 53g formed in the third dielectric layer 42.
  • the electrode 47e is connected to the electrode 46a by a plurality of via hole electrodes 53i formed in the third dielectric layer 42.
  • the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are not connected to each other by the wiring board.
  • the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46f, and the ground electrode 47d, the land electrodes 44k and 44h, the electrode 45h, the electrode 46g, and the ground electrode
  • the balanced signal terminal-side ground electrodes formed of 47b are not connected to each other by the wiring board 10.
  • the transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board.
  • a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, an electrode 46z, and a ground electrode 47c, land electrodes 44k and 44h, an electrode 45h, an electrode 46g, and a ground
  • the balanced signal terminal side ground electrode composed of the electrode 47 b is not connected to each other by the wiring board 10.
  • the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode which are paths through which the unbalanced signal flows to the ground
  • the balanced signal terminal-side ground electrode which is the path through which the balanced signal flows to the ground
  • FIG. 32 shows the common mode isolation characteristics of the surface acoustic wave duplexer together with the common mode isolation characteristics of the surface acoustic wave duplexer 1 of the first embodiment.
  • the common mode isolation in the transmission frequency band (1850 MHz to 1910 MHz) of the surface acoustic wave duplexer according to the second example was 55.7 dB.
  • the unbalanced signal terminal side ground electrode, which is the path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is the path through which the balanced signal flows to the ground are connected to each other by the wiring board 10. Even if not, the unbalanced signal terminal side ground electrode, which is a path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is a path through which the balanced signal flows to the ground, are portions other than the back surface 10b of the wiring board 10. It can be seen that the common mode isolation can be increased in the same manner as in the case of commoning in the back surface 10b.
  • 2nd balanced signal terminal 15d ... Unbalanced signal terminal side ground terminal 15e, 15f ... Balanced signal terminal side ground terminal 16 ... Sealing resin layers 17a-17e ... Elasticity Surface wave resonator 18... Transmission side surface acoustic wave filter chip 19... Reception side surface acoustic wave filter Tape chip 18A, 19A ... Piezoelectric substrate 18B, 19B ... Electrode 21 ... Antenna terminal 22a ... First reception side signal terminal 22b ... Second reception side signal terminal 24 ... Transmission side signal terminal 26 ... Bump 33 ... Series arms 37a-37d ... parallel arm 40 ... first dielectric layer 41 ... second dielectric layer 42 ... third dielectric layer 44 ... first electrode layers 44a to 44l ...

Abstract

Provided is an acoustic wave branching filter with high common mode isolation. The acoustic wave branching filter is provided with a transmit filter configured with an acoustic wave filter and with a receive filter configured with a balanced-type longitudinal-coupling-resonator acoustic wave filter with a balun function. A ground electrode at an unbalanced signal terminal side and a ground electrode at a balanced signal terminal side are not connected on a wiring board (10). The ground electrode at the unbalanced signal terminal side includes a land electrode (44j), electrodes (45g and 46f), and a ground electrode (47d). The ground electrode at the balanced signal terminal side includes land electrodes (44k and 44h), an electrode (45h), an electrode (46g), and a ground electrode (47b).

Description

弾性波分波器Elastic wave splitter
　本発明は、弾性波分波器に関する。特に、本発明は、縦結合共振子型弾性波フィルタを備える弾性波分波器に関する。 The present invention relates to an elastic wave duplexer. In particular, the present invention relates to an acoustic wave duplexer including a longitudinally coupled resonator type acoustic wave filter.
　例えば、ＵＭＴＳ（Ｕｎｉｖｅｒｓａｌ　Ｍｏｂｉｌｅ　Ｔｅｌｅｃｏｍｍｕｎｉｃａｔｉｏｎｓ　Ｓｙｓｔｅｍ）のようなＣＤＭＡ（Ｃｏｄｅ　Ｄｉｖｉｓｉｏｎ　Ｍｕｌｔｉｐｌｅ　Ａｃｃｅｓｓ）方式に対応する携帯電話機などの通信機では、信号の送信及び受信を同時に行うために、ＲＦ（Ｒａｄｉｏ　Ｆｒｅｑｕｅｎｃｙ）回路に、デュプレクサが搭載されている。デュプレクサは、送信フィルタと、受信フィルタと、整合回路とを備える分波器である。 For example, in a communication device such as a mobile phone that supports a CDMA (Code Division Multiple Access) method such as UMTS (Universal Mobile Telecommunications System), an RF (Radio Frequency) circuit is used to simultaneously transmit and receive signals. A duplexer is installed. The duplexer is a duplexer including a transmission filter, a reception filter, and a matching circuit.
　従来、送信フィルタ及び受信フィルタが弾性波フィルタからなる弾性波デュプレクサが実用化されている。近年では、携帯電話機のＲＦ回路においてバランを省略するために、デュプレクサの受信フィルタにバラン機能を持たせることが求められている。そのため、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性波フィルタにより受信フィルタが構成されている弾性波デュプレクサが、携帯電話機のＲＦ回路に搭載されるようになってきている。そのような弾性波デュプレクサの一例が、下記の特許文献１に示されている。 Conventionally, an elastic wave duplexer in which a transmission filter and a reception filter are elastic wave filters has been put into practical use. In recent years, in order to omit a balun in an RF circuit of a mobile phone, it is required that the reception filter of the duplexer has a balun function. For this reason, an elastic wave duplexer in which a reception filter is constituted by a balanced longitudinally coupled resonator type elastic wave filter having a balance-unbalance conversion function has been mounted on an RF circuit of a mobile phone. An example of such an elastic wave duplexer is shown in Patent Document 1 below.
　図３３は、特許文献１に記載の弾性波デュプレクサ１００の略図的回路図である。図３３に示すように、弾性波デュプレクサ１００は、アンテナ端子１０１と、送信側信号端子１０２と、第１及び第２の受信側信号端子１０３ａ，１０３ｂとを有する。アンテナ端子１０１と送信側信号端子１０２との間には、送信フィルタ１０４が接続されている。送信フィルタ１０４は、ラダー型弾性波フィルタにより構成されている。一方、アンテナ端子１０１と第１及び第２の受信側信号端子１０３ａ，１０３ｂとの間には、受信フィルタ１０５が接続されている。受信フィルタ１０５は、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性波フィルタにより構成されている。よって、第１及び第２の受信側信号端子１０３ａ，１０３ｂは、第１及び第２の平衡信号端子である。 FIG. 33 is a schematic circuit diagram of the elastic wave duplexer 100 described in Patent Document 1. As shown in FIG. 33, the elastic wave duplexer 100 includes an antenna terminal 101, a transmission-side signal terminal 102, and first and second reception- side signal terminals 103a and 103b. A transmission filter 104 is connected between the antenna terminal 101 and the transmission-side signal terminal 102. The transmission filter 104 is configured by a ladder type elastic wave filter. On the other hand, a reception filter 105 is connected between the antenna terminal 101 and the first and second reception- side signal terminals 103a and 103b. The reception filter 105 is constituted by a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function. Therefore, the first and second receiving signal terminals 103a and 103b are first and second balanced signal terminals.
　弾性波デュプレクサ１００では、第１の受信側信号端子１０３ａと、第２の受信側信号端子１０３ｂとは、受信フィルタ１０５の同じＩＤＴ電極１０６，１０７に接続されている。具体的には、第１の受信側信号端子１０３ａは、ＩＤＴ電極１０６，１０７の一方側のくし歯状電極１０６ａ，１０７ａに接続されている。第２の受信側信号端子１０３ｂは、ＩＤＴ電極１０６，１０７の他方側のくし歯状電極１０６ｂ，１０７ｂに接続されている。このため、第１及び第２の受信側信号端子１０３ａ，１０３ｂが接続されているＩＤＴ電極１０６，１０７は、グラウンドに接続されていない浮き電極（フロート電極）である。 In the elastic wave duplexer 100, the first reception-side signal terminal 103 a and the second reception-side signal terminal 103 b are connected to the same IDT electrodes 106 and 107 of the reception filter 105. Specifically, the first receiving signal terminal 103a is connected to the comb- like electrodes 106a and 107a on one side of the IDT electrodes 106 and 107. The second receiving side signal terminal 103b is connected to the comb- like electrodes 106b and 107b on the other side of the IDT electrodes 106 and 107. Therefore, the IDT electrodes 106 and 107 to which the first and second receiving signal terminals 103a and 103b are connected are floating electrodes (float electrodes) that are not connected to the ground.
特開２００３－２４９８４２号公報JP 2003-249842 A
　近年、弾性波デュプレクサなどの弾性波分波器においては、コモンモード（同相モード）アイソレーションを大きくすることが強く求められるようになってきている。しかしながら、上記弾性波デュプレクサ１００では、コモンモードアイソレーションを大きくすることができないという問題がある。 In recent years, in an acoustic wave duplexer such as an acoustic wave duplexer, it has been strongly demanded to increase common mode (common mode) isolation. However, the elastic wave duplexer 100 has a problem that common mode isolation cannot be increased.
　本発明は、斯かる点に鑑みて成されたものであり、その目的は、縦結合共振子型弾性波フィルタを備える弾性波分波器であって、コモンモードアイソレーションが大きな弾性波分波器を提供することにある。 The present invention has been made in view of the above points, and an object of the present invention is to provide an elastic wave demultiplexer including a longitudinally coupled resonator type elastic wave filter, which has large common mode isolation. Is to provide a vessel.
　本発明に係る第１の弾性波分波器は、送信フィルタと、受信フィルタとを備えている。送信フィルタは、弾性波フィルタにより構成されている。受信フィルタは、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性波フィルタにより構成されている。配線基板と、少なくとも１つの弾性波フィルタチップとを備えている。配線基板は、ダイアタッチ面と裏面とを有する。弾性波フィルタチップは、ダイアタッチ面の上に実装されている。弾性波フィルタチップは、圧電基板と、受信フィルタを構成する電極とを有する。受信フィルタを構成する電極は、圧電基板の上に形成されている。受信フィルタを構成する電極は、不平衡信号端子と、第１及び第２の平衡信号端子と、不平衡信号端子側グラウンド端子と、平衡信号端子側グラウンド端子と、複数のＩＤＴ電極とを含む。不平衡信号端子側グラウンド端子と、平衡信号端子側グラウンド端子とは、圧電基板上で互いに接続されていない。複数のＩＤＴ電極は、不平衡信号端子側ＩＤＴ電極と、第１の平衡信号端子側ＩＤＴ電極と、第２の平衡信号端子側ＩＤＴ電極とを有する。不平衡信号端子側ＩＤＴ電極は、不平衡信号端子に接続されているくし歯状電極と、不平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する。第１の平衡信号端子側ＩＤＴ電極は、第１の平衡信号端子に接続されているくし歯状電極と、平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する。第２の平衡信号端子側ＩＤＴ電極は、第２の平衡信号端子に接続されているくし歯状電極と、平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する。配線基板は、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とを有する。不平衡信号端子側グラウンド電極は、不平衡信号端子側グラウンド端子と接続されている。平衡信号端子側グラウンド電極は、平衡信号端子側グラウンド端子と接続されている。不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、前記配線基板で互いに接続されていない。 The first acoustic wave duplexer according to the present invention includes a transmission filter and a reception filter. The transmission filter is constituted by an elastic wave filter. The reception filter is composed of a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function. A wiring board and at least one elastic wave filter chip are provided. The wiring board has a die attach surface and a back surface. The elastic wave filter chip is mounted on the die attach surface. The acoustic wave filter chip has a piezoelectric substrate and electrodes that constitute a reception filter. The electrodes constituting the reception filter are formed on the piezoelectric substrate. The electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes. The unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate. The plurality of IDT electrodes include an unbalanced signal terminal side IDT electrode, a first balanced signal terminal side IDT electrode, and a second balanced signal terminal side IDT electrode. The unbalanced signal terminal side IDT electrode has a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal side ground terminal. The first balanced signal terminal-side IDT electrode includes a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal. The second balanced signal terminal-side IDT electrode has a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal. The wiring board has an unbalanced signal terminal side ground electrode and a balanced signal terminal side ground electrode. The unbalanced signal terminal side ground electrode is connected to the unbalanced signal terminal side ground terminal. The balanced signal terminal side ground electrode is connected to the balanced signal terminal side ground terminal. The unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are not connected to each other on the wiring board.
　本発明に係る第２の弾性波分波器は、送信フィルタと、受信フィルタとを備えている。送信フィルタは、弾性波フィルタにより構成されている。受信フィルタは、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性波フィルタにより構成されている。配線基板と、少なくとも１つの弾性波フィルタチップとを備えている。配線基板は、ダイアタッチ面と裏面とを有する。弾性波フィルタチップは、ダイアタッチ面の上に実装されている。弾性波フィルタチップは、圧電基板と、受信フィルタを構成する電極とを有する。受信フィルタを構成する電極は、圧電基板の上に形成されている。受信フィルタを構成する電極は、不平衡信号端子と、第１及び第２の平衡信号端子と、不平衡信号端子側グラウンド端子と、平衡信号端子側グラウンド端子と、複数のＩＤＴ電極とを含む。不平衡信号端子側グラウンド端子と、平衡信号端子側グラウンド端子とは、圧電基板上で互いに接続されていない。複数のＩＤＴ電極は、不平衡信号端子側ＩＤＴ電極と、第１の平衡信号端子側ＩＤＴ電極と、第２の平衡信号端子側ＩＤＴ電極とを有する。不平衡信号端子側ＩＤＴ電極は、不平衡信号端子に接続されているくし歯状電極と、不平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する。第１の平衡信号端子側ＩＤＴ電極は、第１の平衡信号端子に接続されているくし歯状電極と、平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する。第２の平衡信号端子側ＩＤＴ電極は、第２の平衡信号端子に接続されているくし歯状電極と、平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する。配線基板は、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とを有する。不平衡信号端子側グラウンド電極は、不平衡信号端子側グラウンド端子と接続されている。平衡信号端子側グラウンド電極は、平衡信号端子側グラウンド端子と接続されている。不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面において共通化されている。 The second acoustic wave duplexer according to the present invention includes a transmission filter and a reception filter. The transmission filter is constituted by an elastic wave filter. The reception filter is composed of a balanced longitudinally coupled resonator type elastic wave filter having a balanced-unbalanced conversion function. A wiring board and at least one elastic wave filter chip are provided. The wiring board has a die attach surface and a back surface. The elastic wave filter chip is mounted on the die attach surface. The acoustic wave filter chip has a piezoelectric substrate and electrodes that constitute a reception filter. The electrodes constituting the reception filter are formed on the piezoelectric substrate. The electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes. The unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate. The plurality of IDT electrodes include an unbalanced signal terminal side IDT electrode, a first balanced signal terminal side IDT electrode, and a second balanced signal terminal side IDT electrode. The unbalanced signal terminal side IDT electrode has a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal side ground terminal. The first balanced signal terminal-side IDT electrode includes a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal. The second balanced signal terminal-side IDT electrode has a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal. The wiring board has an unbalanced signal terminal side ground electrode and a balanced signal terminal side ground electrode. The unbalanced signal terminal side ground electrode is connected to the unbalanced signal terminal side ground terminal. The balanced signal terminal side ground electrode is connected to the balanced signal terminal side ground terminal. The unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are shared on the back surface of the wiring board.
　本発明に係る第１及び第２の弾性波分波器のそれぞれのある特定の局面では、弾性波フィルタチップは、受信フィルタを構成する電極を有する受信側弾性波フィルタチップと、送信フィルタを構成する電極を有する送信側弾性波フィルタチップとを含む。 In a specific aspect of each of the first and second acoustic wave duplexers according to the present invention, the acoustic wave filter chip constitutes a reception-side acoustic wave filter chip having an electrode that constitutes a reception filter, and a transmission filter. A transmission-side acoustic wave filter chip having an electrode to be transmitted.
　本発明に係る第１及び第２の弾性波分波器のそれぞれの他の特定の局面では、送信フィルタは、ラダー型弾性波フィルタにより構成されている。送信フィルタを構成する電極は、出力端子と、入力端子と、送信側グラウンド端子と、直列腕共振子及び並列腕共振子を構成している複数の弾性波共振子とを含む。並列腕共振子を構成している弾性波共振子は、直列腕共振子を構成している弾性波共振子に接続されているくし歯状電極と、送信側グラウンド端子に接続されているくし歯状電極とを有するＩＤＴ電極を有する。配線基板は、送信側グラウンド端子と接続されている送信側グラウンド電極を有する。送信側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板で互いに接続されていない。 In another specific aspect of each of the first and second acoustic wave duplexers according to the present invention, the transmission filter is configured by a ladder type acoustic wave filter. The electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator. The acoustic wave resonator constituting the parallel arm resonator is composed of comb-like electrodes connected to the acoustic wave resonator constituting the series arm resonator and comb teeth connected to the transmission-side ground terminal. And an IDT electrode having a shape electrode. The wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal. The transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board.
　本発明に係る第１及び第２の弾性波分波器のそれぞれの別の特定の局面では、送信フィルタは、ラダー型弾性波フィルタにより構成されている。送信フィルタを構成する電極は、出力端子と、入力端子と、送信側グラウンド端子と、直列腕共振子及び並列腕共振子を構成している複数の弾性波共振子とを含む。並列腕共振子を構成している弾性波共振子は、直列腕共振子を構成している弾性波共振子に接続されているくし歯状電極と、送信側グラウンド端子に接続されているくし歯状電極とを有するＩＤＴ電極を有する。配線基板は、送信側グラウンド端子と接続されている送信側グラウンド電極を有する。送信側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面において共通化されている。 In another specific aspect of each of the first and second elastic wave duplexers according to the present invention, the transmission filter is configured by a ladder-type elastic wave filter. The electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator. The acoustic wave resonator constituting the parallel arm resonator is composed of comb-like electrodes connected to the acoustic wave resonator constituting the series arm resonator and comb teeth connected to the transmission-side ground terminal. And an IDT electrode having a shape electrode. The wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal. The transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board.
　なお、本発明において、「弾性波」には、弾性表面波と弾性境界波とが含まれるものとする。 In the present invention, the “elastic wave” includes a surface acoustic wave and a boundary acoustic wave.
　本発明によれば、縦結合共振子型弾性波フィルタを備える弾性波分波器であって、コモンモードアイソレーションが大きな弾性波分波器を提供することができる。 According to the present invention, it is possible to provide an acoustic wave duplexer including a longitudinally coupled resonator type acoustic wave filter and having a large common mode isolation.
図１は、本発明の第１の実施形態に係る弾性波デュプレクサの略図的回路図である。FIG. 1 is a schematic circuit diagram of an elastic wave duplexer according to a first embodiment of the present invention. 図２は、本発明の第１の実施形態に係る弾性波デュプレクサの模式的断面図である。FIG. 2 is a schematic cross-sectional view of the elastic wave duplexer according to the first embodiment of the present invention. 図３は、本発明の第１の実施形態に係る弾性波デュプレクサにおける送信側弾性波フィルタチップの模式的透視平面図である。FIG. 3 is a schematic perspective plan view of the transmission-side elastic wave filter chip in the elastic wave duplexer according to the first embodiment of the present invention. 図４は、本発明の第１の実施形態に係る弾性波デュプレクサにおける受信側弾性表面波フィルタチップの模式的透視平面図である。FIG. 4 is a schematic perspective plan view of the reception-side surface acoustic wave filter chip in the elastic wave duplexer according to the first embodiment of the present invention. 図５は、本発明の第１の実施形態に係る弾性波デュプレクサにおける、配線基板の第１の電極層と第１の誘電体層との模式的透視平面図である。FIG. 5 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention. 図６は、本発明の第１の実施形態に係る弾性波デュプレクサにおける、配線基板の第２の電極層と第２の誘電体層との模式的透視平面図である。FIG. 6 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention. 図７は、本発明の第１の実施形態に係る弾性波デュプレクサにおける、配線基板の第３の電極層と第３の誘電体層との模式的透視平面図である。FIG. 7 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention. 図８は、本発明の第１の実施形態に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 8 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention. 図９は、本発明の第１の実施形態に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 9 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first embodiment of the present invention. 図１０は、第１の比較例に係る弾性波デュプレクサにおける、配線基板の第１の電極層と第１の誘電体層との模式的透視平面図である。FIG. 10 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example. 図１１は、第１の比較例に係る弾性波デュプレクサにおける、配線基板の第２の電極層と第２の誘電体層との模式的透視平面図である。FIG. 11 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example. 図１２は、第１の比較例に係る弾性波デュプレクサにおける、配線基板の第３の電極層と第３の誘電体層との模式的透視平面図である。FIG. 12 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the first comparative example. 図１３は、第１の比較例に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 13 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first comparative example. 図１４は、第１の比較例に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 14 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the first comparative example. 図１５は、第２の比較例に係る弾性波デュプレクサにおける、配線基板の第１の電極層と第１の誘電体層との模式的透視平面図である。FIG. 15 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example. 図１６は、第２の比較例に係る弾性波デュプレクサにおける、配線基板の第２の電極層と第２の誘電体層との模式的透視平面図である。FIG. 16 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example. 図１７は、第２の比較例に係る弾性波デュプレクサにおける、配線基板の第３の電極層と第３の誘電体層との模式的透視平面図である。FIG. 17 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the second comparative example. 図１８は、第２の比較例に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 18 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second comparative example. 図１９は、第２の比較例に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 19 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second comparative example. 図２０は、第１の実施例並びに第１及び第２の比較例のそれぞれに係る弾性波デュプレクサのコモンモードアイソレーション特性を表すグラフである。FIG. 20 is a graph showing common mode isolation characteristics of the elastic wave duplexer according to each of the first example and the first and second comparative examples. 図２１は、第３の比較例に係る弾性波デュプレクサにおける、配線基板の第１の電極層と第１の誘電体層との模式的透視平面図である。FIG. 21 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example. 図２２は、第３の比較例に係る弾性波デュプレクサにおける、配線基板の第２の電極層と第２の誘電体層との模式的透視平面図である。FIG. 22 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example. 図２３は、第３の比較例に係る弾性波デュプレクサにおける、配線基板の第３の電極層と第３の誘電体層との模式的透視平面図である。FIG. 23 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the third comparative example. 図２４は、第３の比較例に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 24 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the third comparative example. 図２５は、第３の比較例に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 25 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the third comparative example. 図２６は、第１の実施例及び第３の比較例のそれぞれに係る弾性波デュプレクサのコモンモードアイソレーション特性を表すグラフである。FIG. 26 is a graph showing the common mode isolation characteristics of the elastic wave duplexer according to each of the first example and the third comparative example. 図２７は、本発明の第２の実施形態に係る弾性波デュプレクサにおける、配線基板の第１の電極層と第１の誘電体層との模式的透視平面図である。FIG. 27 is a schematic perspective plan view of the first electrode layer and the first dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention. 図２８は、本発明の第２の実施形態に係る弾性波デュプレクサにおける、配線基板の第２の電極層と第２の誘電体層との模式的透視平面図である。FIG. 28 is a schematic perspective plan view of the second electrode layer and the second dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention. 図２９は、本発明の第２の実施形態に係る弾性波デュプレクサにおける、配線基板の第３の電極層と第３の誘電体層との模式的透視平面図である。FIG. 29 is a schematic perspective plan view of the third electrode layer and the third dielectric layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention. 図３０は、本発明の第２の実施形態に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 30 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention. 図３１は、本発明の第２の実施形態に係る弾性波デュプレクサにおける、配線基板の第４の電極層の模式的透視平面図である。FIG. 31 is a schematic perspective plan view of the fourth electrode layer of the wiring board in the elastic wave duplexer according to the second embodiment of the present invention. 図３２は、第１の実施例及び第２の実施例のそれぞれに係る弾性波デュプレクサのコモンモードアイソレーション特性を表すグラフである。FIG. 32 is a graph showing the common mode isolation characteristics of the elastic wave duplexer according to each of the first and second embodiments. 図３３は、特許文献１に記載の弾性波デュプレクサの略図的回路図である。FIG. 33 is a schematic circuit diagram of the elastic wave duplexer described in Patent Document 1.
　以下、本発明を実施した好ましい形態について、弾性波分波器の一種である図１及び図２に示す弾性表面波デュプレクサ１を例に挙げて説明する。但し、弾性表面波デュプレクサ１は、単なる例示である。本発明に係る弾性波分波器は、弾性表面波デュプレクサ１に何ら限定されない。本発明に係る弾性波分波器は、例えばトリプレクサなどの、他の種類の弾性波分波器であってもよい。また、本発明に係る弾性波分波器は、弾性境界波を利用した弾性境界波分波器であってもよい。 Hereinafter, a preferred embodiment in which the present invention is implemented will be described by taking the surface acoustic wave duplexer 1 shown in FIGS. 1 and 2 which is a kind of acoustic wave duplexer as an example. However, the surface acoustic wave duplexer 1 is merely an example. The elastic wave duplexer according to the present invention is not limited to the surface acoustic wave duplexer 1. The elastic wave duplexer according to the present invention may be another type of elastic wave duplexer such as a triplexer. The elastic wave duplexer according to the present invention may be a boundary acoustic wave duplexer using a boundary acoustic wave.
　本実施形態の弾性表面波デュプレクサ１は、例えば、ＵＭＴＳのようなＣＤＭＡ方式に対応する携帯電話機などのＲＦ回路に搭載されるものである。本実施形態の弾性表面波デュプレクサ１は、具体的には、ＵＭＴＳ－ＢＡＮＤ２に対応するデュプレクサである。なお、ＵＭＴＳ－ＢＡＮＤ２の送信周波数帯は、１８５０ＭＨｚ～１９１０ＭＨｚである。ＵＭＴＳ－ＢＡＮＤ２の受信周波数帯は、１９３０ＭＨｚ～１９９０ＭＨｚである。 The surface acoustic wave duplexer 1 according to the present embodiment is mounted on an RF circuit such as a mobile phone corresponding to a CDMA system such as UMTS. The surface acoustic wave duplexer 1 of the present embodiment is specifically a duplexer corresponding to UMTS-BAND2. Note that the transmission frequency band of UMTS-BAND2 is 1850 MHz to 1910 MHz. The reception frequency band of UMTS-BAND2 is 1930 MHz to 1990 MHz.
　図１は、本実施形態に係る弾性表面波デュプレクサ１の略図的回路図である。まず、図１を参照しながら、弾性表面波デュプレクサ１の回路構成について説明する。 FIG. 1 is a schematic circuit diagram of a surface acoustic wave duplexer 1 according to this embodiment. First, the circuit configuration of the surface acoustic wave duplexer 1 will be described with reference to FIG.
　図１に示すように、弾性表面波デュプレクサ１は、アンテナＡｎｔ．に接続されるアンテナ端子２１と、送信側信号端子２４と、第１及び第２の受信側信号端子２２ａ，２２ｂとを有する。アンテナ端子２１と送信側信号端子２４との間に、送信フィルタ１４が接続されている。アンテナ端子２１と第１及び第２の受信側信号端子２２ａ，２２ｂとの間に、受信フィルタ１５が接続されている。 As shown in FIG. 1, the surface acoustic wave duplexer 1 includes an antenna Ant. Antenna terminal 21, a transmission side signal terminal 24, and first and second reception side signal terminals 22a and 22b. A transmission filter 14 is connected between the antenna terminal 21 and the transmission-side signal terminal 24. A reception filter 15 is connected between the antenna terminal 21 and the first and second reception- side signal terminals 22a and 22b.
　アンテナＡｎｔ．とアンテナ端子２１との間の接続点と、グラウンドとの間には、インダクタＬ１からなる整合回路が接続されている。本実施形態では、インダクタＬ１は、チップ・インダクタにより構成されており、弾性表面波デュプレクサ１と共にＲＦ回路に搭載されるものである。なお、弾性表面波デュプレクサ１は、整合回路を含むものであってもよい。その場合、整合回路は、送信フィルタ１４及び受信フィルタ１５の一方または両方と、アンテナ端子２１との間に接続される。 Antenna Ant. A matching circuit made up of an inductor L1 is connected between the connection point between the antenna terminal 21 and the antenna terminal 21 and the ground. In the present embodiment, the inductor L1 is constituted by a chip inductor and is mounted on the RF circuit together with the surface acoustic wave duplexer 1. The surface acoustic wave duplexer 1 may include a matching circuit. In that case, the matching circuit is connected between one or both of the transmission filter 14 and the reception filter 15 and the antenna terminal 21.
　送信フィルタ１４は、ラダー型弾性表面波フィルタにより構成されている。送信フィルタ１４は、出力端子１４ａと、入力端子１４ｂとを有する。出力端子１４ａは、アンテナ端子２１と接続されている。入力端子１４ｂは、送信側信号端子２４と接続されている。 The transmission filter 14 is a ladder type surface acoustic wave filter. The transmission filter 14 has an output terminal 14a and an input terminal 14b. The output terminal 14 a is connected to the antenna terminal 21. The input terminal 14 b is connected to the transmission side signal terminal 24.
　送信フィルタ１４は、入力端子１４ｂと出力端子１４ａとを接続している直列腕３３を有する。直列腕３３において、直列腕共振子Ｓ１，Ｓ２，Ｓ３，Ｓ４が直列に接続されている。直列腕共振子Ｓ１，Ｓ２，Ｓ３，Ｓ４のそれぞれは、ひとつの共振子として機能する複数の弾性表面波共振子により構成されている。このように、直列腕共振子Ｓ１，Ｓ２，Ｓ３，Ｓ４のそれぞれを、複数の弾性表面波共振子によって構成することにより、送信フィルタ１４の耐電力性を向上させることができる。なお、直列腕共振子Ｓ１，Ｓ２，Ｓ３，Ｓ４のそれぞれは、１つの弾性表面波共振子により構成されていてもよい。 The transmission filter 14 has a serial arm 33 that connects the input terminal 14b and the output terminal 14a. In the series arm 33, series arm resonators S1, S2, S3, and S4 are connected in series. Each of the series arm resonators S1, S2, S3, and S4 is composed of a plurality of surface acoustic wave resonators that function as one resonator. As described above, by configuring each of the series arm resonators S1, S2, S3, and S4 with a plurality of surface acoustic wave resonators, the power durability of the transmission filter 14 can be improved. Note that each of the series arm resonators S1, S2, S3, and S4 may be composed of one surface acoustic wave resonator.
　なお、直列腕共振子Ｓ２には、キャパシタＣが並列に接続されている。キャパシタＣは、互いに間挿し合っている一対のくし歯状電極により構成されている。 Note that a capacitor C is connected in parallel to the series arm resonator S2. The capacitor C is composed of a pair of comb-like electrodes that are interleaved with each other.
　送信フィルタ１４は、直列腕３３とグラウンドとの間に接続されている並列腕３７ａ～３７ｄを有する。並列腕３７ａ～３７ｄのそれぞれには、並列腕共振子Ｐ１，Ｐ２，Ｐ３，Ｐ４が設けられている。並列腕共振子Ｐ１，Ｐ２，Ｐ３，Ｐ４のそれぞれは、ひとつの共振子として機能する複数の弾性表面波共振子により構成されている。このように、並列腕共振子Ｐ１，Ｐ２，Ｐ３，Ｐ４のそれぞれを、複数の弾性表面波共振子によって構成することにより、送信フィルタ１４の耐電力性を向上させることができる。なお、並列腕共振子Ｐ１，Ｐ２，Ｐ３，Ｐ４のそれぞれは、１つの弾性表面波共振子により構成されていてもよい。 The transmission filter 14 has parallel arms 37a to 37d connected between the serial arm 33 and the ground. Parallel arm resonators P1, P2, P3, and P4 are provided in each of the parallel arms 37a to 37d. Each of the parallel arm resonators P1, P2, P3, and P4 includes a plurality of surface acoustic wave resonators that function as a single resonator. As described above, by configuring each of the parallel arm resonators P1, P2, P3, and P4 with a plurality of surface acoustic wave resonators, the power durability of the transmission filter 14 can be improved. Note that each of the parallel arm resonators P1, P2, P3, and P4 may be composed of one surface acoustic wave resonator.
　送信フィルタ１４は、送信側グラウンド端子１４ｃ，１４ｄを有する。送信側グラウンド端子１４ｃは、並列腕３７ａ～３７ｃと接続されている。すなわち、並列腕３７ａ～３７ｃは、送信側グラウンド端子１４ｃを介してグラウンドと接続されている。送信側グラウンド端子１４ｄは、並列腕３７ｄと接続されている。すなわち、並列腕３７ｄは、送信側グラウンド端子１４ｄを介してグラウンドと接続されている。 The transmission filter 14 includes transmission- side ground terminals 14c and 14d. The transmission side ground terminal 14c is connected to the parallel arms 37a to 37c. That is, the parallel arms 37a to 37c are connected to the ground via the transmission side ground terminal 14c. The transmission side ground terminal 14d is connected to the parallel arm 37d. That is, the parallel arm 37d is connected to the ground via the transmission-side ground terminal 14d.
　並列腕共振子Ｐ１，Ｐ２，Ｐ３とグラウンドとの間には、インダクタＬ２が接続されている。並列腕共振子Ｐ４とグラウンドとの間には、インダクタＬ３が接続されている。言い換えれば、送信側グラウンド端子１４ｃとグラウンドとの間には、インダクタＬ２が接続されている。送信側グラウンド端子１４ｄとグラウンドとの間には、インダクタＬ３が接続されている。 An inductor L2 is connected between the parallel arm resonators P1, P2, P3 and the ground. An inductor L3 is connected between the parallel arm resonator P4 and the ground. In other words, the inductor L2 is connected between the transmission-side ground terminal 14c and the ground. An inductor L3 is connected between the transmission-side ground terminal 14d and the ground.
　並列腕共振子Ｐ１を構成している弾性表面波共振子は、直列腕共振子Ｓ１，Ｓ２を構成している弾性表面波共振子に接続されているくし歯状電極と、送信側グラウンド端子１４ｃに接続されているくし歯状電極とを有するＩＤＴ電極を有する。並列腕共振子Ｐ２を構成している弾性表面波共振子は、直列腕共振子Ｓ２，Ｓ３を構成している弾性表面波共振子に接続されているくし歯状電極と、送信側グラウンド端子１４ｃに接続されているくし歯状電極とを有するＩＤＴ電極を有する。並列腕共振子Ｐ３を構成している弾性表面波共振子は、直列腕共振子Ｓ３，Ｓ４を構成している弾性表面波共振子に接続されているくし歯状電極と、送信側グラウンド端子１４ｃに接続されているくし歯状電極とを有するＩＤＴ電極を有する。並列腕共振子Ｐ４を構成している弾性表面波共振子は、直列腕共振子Ｓ４を構成している弾性表面波共振子に接続されているくし歯状電極と、送信側グラウンド端子１４ｄに接続されているくし歯状電極とを有するＩＤＴ電極を有する。 The surface acoustic wave resonator constituting the parallel arm resonator P1 includes a comb-like electrode connected to the surface acoustic wave resonators constituting the series arm resonators S1 and S2, and a transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode. The surface acoustic wave resonator constituting the parallel arm resonator P2 includes a comb-like electrode connected to the surface acoustic wave resonators constituting the series arm resonators S2 and S3, and a transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode. The surface acoustic wave resonator constituting the parallel arm resonator P3 includes comb-like electrodes connected to the surface acoustic wave resonators constituting the series arm resonators S3 and S4, and the transmission-side ground terminal 14c. And an IDT electrode having a comb-like electrode connected to the electrode. The surface acoustic wave resonator constituting the parallel arm resonator P4 is connected to the comb-like electrode connected to the surface acoustic wave resonator constituting the series arm resonator S4 and the transmission-side ground terminal 14d. And an IDT electrode having a comb-like electrode.
　受信フィルタ１５は、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性表面波フィルタにより構成されている。受信フィルタ１５は、不平衡信号端子１５ａと、第１及び第２の平衡信号端子１５ｂ，１５ｃとを有する。不平衡信号端子１５ａは、アンテナ端子２１と接続されている。第１の平衡信号端子１５ｂは、第１の受信側信号端子２２ａと接続されている。第２の平衡信号端子１５ｃは、第２の受信側信号端子２２ｂと接続されている。なお、本実施形態において、不平衡信号端子１５ａのインピーダンスは５０Ωである。第１及び第２の平衡信号端子１５ｂ，１５ｃのインピーダンスは１００Ωである。 The reception filter 15 is composed of a balanced longitudinally coupled resonator type surface acoustic wave filter having a balanced-unbalanced conversion function. The reception filter 15 includes an unbalanced signal terminal 15a and first and second balanced signal terminals 15b and 15c. The unbalanced signal terminal 15a is connected to the antenna terminal 21. The first balanced signal terminal 15b is connected to the first receiving signal terminal 22a. The second balanced signal terminal 15c is connected to the second receiving signal terminal 22b. In the present embodiment, the impedance of the unbalanced signal terminal 15a is 50Ω. The impedances of the first and second balanced signal terminals 15b and 15c are 100Ω.
　受信フィルタ１５は、第１の縦結合共振子型弾性表面波フィルタ素子１５Ａと、第２の縦結合共振子型弾性表面波フィルタ素子１５Ｂと、弾性表面波共振子１７ａ～１７ｅとを有する。 The reception filter 15 includes a first longitudinally coupled resonator type surface acoustic wave filter element 15A, a second longitudinally coupled resonator type surface acoustic wave filter element 15B, and surface acoustic wave resonators 17a to 17e.
　第１の縦結合共振子型弾性表面波フィルタ素子１５Ａは、不平衡信号端子１５ａと第１の平衡信号端子１５ｂとの間に接続されている。一方、第２の縦結合共振子型弾性表面波フィルタ素子１５Ｂは、不平衡信号端子１５ａと第２の平衡信号端子１５ｃとの間に接続されている。 The first longitudinally coupled resonator type surface acoustic wave filter element 15A is connected between the unbalanced signal terminal 15a and the first balanced signal terminal 15b. On the other hand, the second longitudinally coupled resonator type surface acoustic wave filter element 15B is connected between the unbalanced signal terminal 15a and the second balanced signal terminal 15c.
　第１の縦結合共振子型弾性表面波フィルタ素子１５Ａは、弾性表面波伝搬方向に沿って配列されたＩＤＴ電極１５Ａ１，１５Ａ２，１５Ａ３と、それら３つのＩＤＴ電極１５Ａ１，１５Ａ２，１５Ａ３が設けられている領域の弾性表面波伝搬方向両側に配置された一対の反射器１５Ａ４，１５Ａ５とを有する。すなわち、第１の縦結合共振子型弾性表面波フィルタ素子１５Ａは、３ＩＤＴ型の縦結合共振子型弾性表面波フィルタ素子である。 The first longitudinally coupled resonator type surface acoustic wave filter element 15A is provided with IDT electrodes 15A1, 15A2, and 15A3 arranged along the surface acoustic wave propagation direction, and these three IDT electrodes 15A1, 15A2, and 15A3. And a pair of reflectors 15A4 and 15A5 disposed on both sides of the surface acoustic wave propagation direction in the region. That is, the first longitudinally coupled resonator type surface acoustic wave filter element 15A is a 3IDT type longitudinally coupled resonator type surface acoustic wave filter element.
　弾性表面波伝搬方向の両側に位置しているＩＤＴ電極１５Ａ１，１５Ａ３の一方側のくし歯状電極は、不平衡信号端子１５ａに接続されており、他方側のくし歯状電極は、グラウンドに接続されている。 The comb-like electrodes on one side of the IDT electrodes 15A1 and 15A3 located on both sides of the surface acoustic wave propagation direction are connected to the unbalanced signal terminal 15a, and the comb-like electrode on the other side is connected to the ground. Has been.
　弾性表面波伝搬方向の中央に位置しているＩＤＴ電極１５Ａ２の一方側のくし歯状電極は、グラウンドに接続されており、他方側のくし歯状電極は、第１の平衡信号端子１５ｂに接続されている。ＩＤＴ電極１５Ａ２と第１の平衡信号端子１５ｂとの間の接続点と、グラウンドとの間には、弾性表面波共振子１７ｄが接続されている。弾性波表面共振子１７ｄは、１つのＩＤＴ電極と、当該ＩＤＴ電極の弾性表面波伝搬方向両側に配置された１組の反射器とを有する。すなわち、弾性波表面共振子１７ｄは、１ポート型弾性表面波共振子である。 The comb-like electrode on one side of the IDT electrode 15A2 located in the center of the surface acoustic wave propagation direction is connected to the ground, and the comb-like electrode on the other side is connected to the first balanced signal terminal 15b. Has been. A surface acoustic wave resonator 17d is connected between the connection point between the IDT electrode 15A2 and the first balanced signal terminal 15b and the ground. The surface acoustic wave resonator 17d includes one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, the surface acoustic wave resonator 17d is a 1-port surface acoustic wave resonator.
　第２の縦結合共振子型弾性表面波フィルタ素子１５Ｂは、弾性表面波伝搬方向に沿って配列されたＩＤＴ電極１５Ｂ１，１５Ｂ２，１５Ｂ３と、それら３つのＩＤＴ電極１５Ｂ１，１５Ｂ２，１５Ｂ３が設けられている領域の弾性表面波伝搬方向両側に配置された一対の反射器１５Ｂ４，１５Ｂ５とを有する。すなわち、第２の縦結合共振子型弾性表面波フィルタ素子１５Ｂは、３ＩＤＴ型の縦結合共振子型弾性表面波フィルタ素子である。 The second longitudinally coupled resonator type surface acoustic wave filter element 15B is provided with IDT electrodes 15B1, 15B2, and 15B3 arranged along the surface acoustic wave propagation direction, and these three IDT electrodes 15B1, 15B2, and 15B3. And a pair of reflectors 15B4 and 15B5 disposed on both sides of the surface acoustic wave propagation direction in the region. That is, the second longitudinally coupled resonator type surface acoustic wave filter element 15B is a 3IDT type longitudinally coupled resonator type surface acoustic wave filter element.
　弾性表面波伝搬方向の両側に位置しているＩＤＴ電極１５Ｂ１，１５Ｂ３の一方側のくし歯状電極は、不平衡信号端子１５ａに接続されており、他方側のくし歯状電極は、グラウンドに接続されている。 The comb-like electrodes on one side of the IDT electrodes 15B1 and 15B3 located on both sides of the surface acoustic wave propagation direction are connected to the unbalanced signal terminal 15a, and the comb-like electrode on the other side is connected to the ground. Has been.
　弾性表面波伝搬方向の中央に位置しているＩＤＴ電極１５Ｂ２の一方側のくし歯状電極は、グラウンドに接続されており、他方側のくし歯状電極は、第２の平衡信号端子１５ｃに接続されている。ＩＤＴ電極１５Ｂ２と第２の平衡信号端子１５ｃとの間の接続点と、グラウンドとの間には、弾性表面波共振子１７ｅが接続されている。弾性表面波共振子１７ｅは、１つのＩＤＴ電極と、当該ＩＤＴ電極の弾性表面波伝搬方向両側に配置された１組の反射器とを有する。すなわち、弾性波表面共振子１７ｅは、１ポート型弾性表面波共振子である。 The comb-like electrode on one side of the IDT electrode 15B2 located in the center of the surface acoustic wave propagation direction is connected to the ground, and the comb-like electrode on the other side is connected to the second balanced signal terminal 15c. Has been. A surface acoustic wave resonator 17e is connected between the connection point between the IDT electrode 15B2 and the second balanced signal terminal 15c and the ground. The surface acoustic wave resonator 17e includes one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, the surface acoustic wave resonator 17e is a 1-port surface acoustic wave resonator.
　なお、第１及び第２の縦結合共振子型弾性表面波フィルタ素子１５Ａ，１５Ｂでは、位相を反転するために、第１の縦結合共振子型弾性表面波フィルタ素子１５Ａの弾性表面波伝搬方向の両側に位置しているＩＤＴ電極１５Ａ１，１５Ａ３に対して、第２の縦結合共振子型弾性表面波フィルタ素子１５Ｂの弾性表面波伝搬方向の両側に位置しているＩＤＴ電極１５Ｂ１，１５Ｂ３が反転されている。それ以外の構成は、第１の縦結合共振子型弾性表面波フィルタ素子１５Ａと第２の縦結合共振子型弾性表面波フィルタ素子１５Ｂとで同じである。 In the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A and 15B, the surface acoustic wave propagation direction of the first longitudinally coupled resonator type surface acoustic wave filter element 15A is used in order to invert the phase. The IDT electrodes 15B1 and 15B3 located on both sides of the surface acoustic wave propagation direction of the second longitudinally coupled resonator type surface acoustic wave filter element 15B are inverted with respect to the IDT electrodes 15A1 and 15A3 located on both sides of Has been. Other configurations are the same between the first longitudinally coupled resonator type surface acoustic wave filter element 15A and the second longitudinally coupled resonator type surface acoustic wave filter element 15B.
　弾性表面波共振子１７ａ～１７ｃは、不平衡信号端子１５ａと第１及び第２の縦結合共振子型弾性表面波フィルタ素子１５Ａ，１５Ｂとの間に直列に接続されている。弾性表面波共振子１７ａ～１７ｃのそれぞれは、１つのＩＤＴ電極と、当該ＩＤＴ電極の弾性表面波伝搬方向両側に配置された１組の反射器とを有する。すなわち、弾性表面波共振子１７ａ～１７ｃのそれぞれは、１ポート型弾性表面波共振子である。 The surface acoustic wave resonators 17a to 17c are connected in series between the unbalanced signal terminal 15a and the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A and 15B. Each of the surface acoustic wave resonators 17a to 17c has one IDT electrode and a pair of reflectors disposed on both sides of the IDT electrode in the surface acoustic wave propagation direction. That is, each of the surface acoustic wave resonators 17a to 17c is a one-port surface acoustic wave resonator.
　弾性表面波共振子１７ａ～１７ｃは、送信フィルタ１４との位相を調整するために設けられている。弾性表面波共振子１７ａ～１７ｃは、共振周波数が受信フィルタ１５の通過帯域内に位置し、かつ反共振周波数が受信フィルタ１５の通過帯域よりも高域側であって、通過帯域外に位置するように構成されている。 The surface acoustic wave resonators 17 a to 17 c are provided to adjust the phase with the transmission filter 14. The surface acoustic wave resonators 17 a to 17 c have a resonance frequency located in the pass band of the reception filter 15 and an anti-resonance frequency higher than the pass band of the reception filter 15 and located outside the pass band. It is configured as follows.
　弾性表面波共振子１７ｄ，１７ｅは、受信フィルタ１５の帯域外減衰量を大きくするために設けられている。弾性表面波共振子１７ｄ，１７ｅは、共振周波数が受信フィルタ１５の通過帯域よりも低域側であって、通過帯域外に位置し、反共振周波数が通過帯域内に位置するように構成されている。 The surface acoustic wave resonators 17 d and 17 e are provided to increase the out-of-band attenuation of the reception filter 15. The surface acoustic wave resonators 17d and 17e are configured such that the resonance frequency is lower than the pass band of the reception filter 15, is located outside the pass band, and the anti-resonance frequency is located in the pass band. Yes.
　図２は、本実施形態に係る弾性表面波デュプレクサ１の模式的断面図である。次に、図２を主として参照しながら、本実施形態の弾性表面波デュプレクサ１の具体的構成について説明する。 FIG. 2 is a schematic cross-sectional view of the surface acoustic wave duplexer 1 according to the present embodiment. Next, a specific configuration of the surface acoustic wave duplexer 1 of the present embodiment will be described with reference mainly to FIG.
　図２に示すように、弾性表面波デュプレクサ１は、配線基板１０と、送信側弾性表面波フィルタチップ１８と、受信側弾性表面波フィルタチップ１９とを備えている。図１に示すように、送信側弾性表面波フィルタチップ１８には、送信フィルタ１４のインダクタＬ２，Ｌ３を除く部分が形成されている。インダクタＬ２，Ｌ３は、配線基板１０に設けられている。また、受信側弾性表面波フィルタチップ１９には、受信フィルタ１５が形成されている。 As shown in FIG. 2, the surface acoustic wave duplexer 1 includes a wiring board 10, a transmission-side surface acoustic wave filter chip 18, and a reception-side surface acoustic wave filter chip 19. As shown in FIG. 1, the transmission-side surface acoustic wave filter chip 18 is formed with portions of the transmission filter 14 excluding the inductors L2 and L3. The inductors L2 and L3 are provided on the wiring board 10. A reception filter 15 is formed on the reception-side surface acoustic wave filter chip 19.
　図３は、本実施形態に係る弾性表面波デュプレクサ１における送信側弾性表面波フィルタチップ１８の模式的透視平面図である。図３は、弾性表面波デュプレクサ１の上方から送信側弾性表面波フィルタチップ１８を透視した状態を示している。 FIG. 3 is a schematic perspective plan view of the transmission-side surface acoustic wave filter chip 18 in the surface acoustic wave duplexer 1 according to the present embodiment. FIG. 3 shows a state where the transmitting surface acoustic wave filter chip 18 is seen through from above the surface acoustic wave duplexer 1.
　図３に示すように、送信側弾性表面波フィルタチップ１８は、圧電基板１８Ａと、圧電基板１８Ａの上に形成されており、弾性表面波共振子を構成しているＩＤＴ電極及び反射器、キャパシタＣを構成している一対のくし歯状電極、配線などを含む電極１８Ｂとを有する。すなわち、電極１８Ｂは、送信フィルタ１４を構成する電極である。圧電基板１８Ａの上には、直列腕共振子Ｓ１が接続された出力端子１４ａと、直列腕共振子Ｓ４及び並列腕共振子Ｐ４が接続された入力端子１４ｂと、並列腕共振子Ｐ１～Ｐ３が接続された送信側グラウンド端子１４ｃと、並列腕共振子Ｐ４が接続された送信側グラウンド端子１４ｄとが配置されている。また、圧電基板１８Ａの上には、いずれの弾性表面波共振子とも接続されていないダミー端子１４ｅ，１４ｆが配置されている。すなわち、電極１８Ｂは、出力端子１４ａと、入力端子１４ｂと、送信側グラウンド端子１４ｃと、送信側グラウンド端子１４ｄとダミー端子１４ｅ，１４ｆとを含む。ダミー端子１４ｅ，１４ｆは、送信側弾性表面波フィルタチップ１８と配線基板１０との接合強度を高めるために設けられている。 As shown in FIG. 3, the transmission-side surface acoustic wave filter chip 18 is formed on the piezoelectric substrate 18A, the piezoelectric substrate 18A, and the IDT electrodes, reflectors, and capacitors that form the surface acoustic wave resonator. A pair of comb-like electrodes constituting C, and an electrode 18B including wirings. That is, the electrode 18 </ b> B is an electrode that constitutes the transmission filter 14. On the piezoelectric substrate 18A, there are an output terminal 14a to which the series arm resonator S1 is connected, an input terminal 14b to which the series arm resonator S4 and the parallel arm resonator P4 are connected, and parallel arm resonators P1 to P3. A connected transmission-side ground terminal 14c and a transmission-side ground terminal 14d to which the parallel arm resonator P4 is connected are arranged. On the piezoelectric substrate 18A, dummy terminals 14e and 14f that are not connected to any surface acoustic wave resonator are disposed. That is, the electrode 18B includes an output terminal 14a, an input terminal 14b, a transmission-side ground terminal 14c, a transmission-side ground terminal 14d, and dummy terminals 14e and 14f. The dummy terminals 14e and 14f are provided to increase the bonding strength between the transmission-side surface acoustic wave filter chip 18 and the wiring board 10.
　図４は、本実施形態に係る弾性表面波デュプレクサ１における受信側弾性表面波フィルタチップ１９の模式的透視平面図である。図４は、弾性表面波デュプレクサ１の上方から受信側弾性表面波フィルタチップ１９を透視した状態を示している。 FIG. 4 is a schematic perspective plan view of the reception-side surface acoustic wave filter chip 19 in the surface acoustic wave duplexer 1 according to the present embodiment. FIG. 4 shows a state in which the receiving surface acoustic wave filter chip 19 is seen through from above the surface acoustic wave duplexer 1.
　図４に示すように、受信側弾性表面波フィルタチップ１９は、圧電基板１９Ａと、圧電基板１９Ａの上に形成されており、第１及び第２の縦結合共振子型弾性表面波フィルタ素子１５Ａ，１５Ｂ並びに弾性表面波共振子１７ａ～１７ｅを構成しているＩＤＴ電極及び反射器、配線などを含む電極１９Ｂとを有する。すなわち、電極１９Ｂは、受信フィルタ１５を構成する電極である。圧電基板１９Ａの上には、不平衡信号端子１５ａと、第１及び第２の平衡信号端子１５ｂ，１５ｃと、不平衡信号端子側グラウンド端子１５ｄと、平衡信号端子側グラウンド端子１５ｅ，１５ｆとが配置されている。すなわち、電極１９Ｂは、不平衡信号端子１５ａと、第１及び第２の平衡信号端子１５ｂ，１５ｃと、不平衡信号端子側グラウンド端子１５ｄと、平衡信号端子側グラウンド端子１５ｅ，１５ｆとを含む。不平衡信号端子側グラウンド端子１５ｄは、ＩＤＴ電極１５Ａ１，１５Ａ３，１５Ｂ１，１５Ｂ３の一方側のくし歯状電極に接続されている。平衡信号端子側グラウンド端子１５ｅは、ＩＤＴ電極１５Ａ２，１５Ｂ２の一方側のくし歯状電極に接続されている。平衡信号端子側グラウンド端子１５ｆは、弾性表面波共振子１７ｄ，１７ｅを構成しているＩＤＴ電極の一方のくし歯状電極に接続されている。 As shown in FIG. 4, the receiving surface acoustic wave filter chip 19 is formed on a piezoelectric substrate 19A and a piezoelectric substrate 19A, and the first and second longitudinally coupled resonator type surface acoustic wave filter elements 15A. 15B and IDT electrodes constituting the surface acoustic wave resonators 17a to 17e, and an electrode 19B including a reflector, wiring, and the like. That is, the electrode 19B is an electrode that constitutes the reception filter 15. On the piezoelectric substrate 19A, there are unbalanced signal terminal 15a, first and second balanced signal terminals 15b and 15c, unbalanced signal terminal side ground terminal 15d, and balanced signal terminal side ground terminals 15e and 15f. Has been placed. That is, the electrode 19B includes an unbalanced signal terminal 15a, first and second balanced signal terminals 15b and 15c, an unbalanced signal terminal side ground terminal 15d, and balanced signal terminal side ground terminals 15e and 15f. The unbalanced signal terminal side ground terminal 15d is connected to the comb-like electrode on one side of the IDT electrodes 15A1, 15A3, 15B1, and 15B3. The balanced signal terminal side ground terminal 15e is connected to the comb-like electrodes on one side of the IDT electrodes 15A2 and 15B2. The balanced signal terminal side ground terminal 15f is connected to one comb-like electrode of the IDT electrode constituting the surface acoustic wave resonators 17d and 17e.
　よって、ＩＤＴ電極１５Ａ１，１５Ａ３，１５Ｂ１，１５Ｂ３は、不平衡信号端子１５ａに接続されているくし歯状電極と、不平衡信号端子側グラウンド端子１５ｄに接続されているくし歯状電極とを有する不平衡信号端子側ＩＤＴ電極である。ＩＤＴ電極１５Ａ２は、第１の平衡信号端子１５ｂに接続されているくし歯状電極と、平衡信号端子側グラウンド端子１５ｅに接続されているくし歯状電極とを有する第１の平衡信号端子側ＩＤＴ電極である。弾性表面波共振子１７ｄを構成しているＩＤＴ電極は、第１の平衡信号端子１５ｂに接続されているくし歯状電極と、平衡信号端子側グラウンド端子１５ｆに接続されているくし歯状電極とを有する第１の平衡信号端子側ＩＤＴ電極である。ＩＤＴ電極１５Ｂ２は、第２の平衡信号端子１５ｃに接続されているくし歯状電極と、平衡信号端子側グラウンド端子１５ｅに接続されているくし歯状電極とを有する第２の平衡信号端子側ＩＤＴ電極である。弾性表面波共振子１７ｅを構成しているＩＤＴ電極は、第２の平衡信号端子１５ｃに接続されているくし歯状電極と、平衡信号端子側グラウンド端子１５ｆに接続されているくし歯状電極とを有する第２の平衡信号端子側ＩＤＴ電極である。 Accordingly, the IDT electrodes 15A1, 15A3, 15B1, and 15B3 are unbalanced having comb-like electrodes connected to the unbalanced signal terminal 15a and comb-like electrodes connected to the unbalanced signal terminal side ground terminal 15d. It is a balanced signal terminal side IDT electrode. The IDT electrode 15A2 is a first balanced signal terminal side IDT having a comb-like electrode connected to the first balanced signal terminal 15b and a comb-like electrode connected to the balanced signal terminal side ground terminal 15e. Electrode. The IDT electrodes constituting the surface acoustic wave resonator 17d are comb-like electrodes connected to the first balanced signal terminal 15b, and comb-like electrodes connected to the balanced signal terminal side ground terminal 15f. It is the 1st balanced signal terminal side IDT electrode which has. The IDT electrode 15B2 is a second balanced signal terminal side IDT having a comb-like electrode connected to the second balanced signal terminal 15c and a comb-like electrode connected to the balanced signal terminal side ground terminal 15e. Electrode. The IDT electrodes constituting the surface acoustic wave resonator 17e are comb-like electrodes connected to the second balanced signal terminal 15c, and comb-like electrodes connected to the balanced signal terminal side ground terminal 15f. It is the 2nd balanced signal terminal side IDT electrode which has.
　なお、不平衡信号端子側グラウンド端子１５ｄと、平衡信号端子側グラウンド端子１５ｅ，１５ｆとは、圧電基板１９Ａ上で互いに接続されていない。 The unbalanced signal terminal side ground terminal 15d and the balanced signal terminal side ground terminals 15e, 15f are not connected to each other on the piezoelectric substrate 19A.
　圧電基板１８Ａ，１９Ａの具体例としては、例えば、ＬｉＮｂＯ３基板やＬｉＴａＯ３基板などの圧電単結晶基板が挙げられる。電極１８Ｂ，１９Ｂは、例えば、アルミニウムなどの金属や合金により形成することができる。電極１８Ｂ，１９Ｂは、例えば、複数の金属層の積層体によって構成されていてもよい。 Specific examples of the piezoelectric substrates 18A and 19A include piezoelectric single crystal substrates such as a LiNbO 3 substrate and a LiTaO 3 substrate. The electrodes 18B and 19B can be formed of a metal such as aluminum or an alloy, for example. The electrodes 18B and 19B may be configured by a stacked body of a plurality of metal layers, for example.
　図２に示すように、配線基板１０は、ダイアタッチ面１０ａと、裏面１０ｂとを有する。上記送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９は、ダイアタッチ面１０ａの上に、バンプ２６によりフリップチップ実装されている。ダイアタッチ面１０ａの上には、送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９を覆うように、封止樹脂層１６が形成されている。すなわち、本実施形態の弾性表面波デュプレクサ１は、ＣＳＰ（Ｃｈｉｐ　Ｓｉｚｅ　Ｐａｃｋａｇｅ）型の弾性波分波器である。 As shown in FIG. 2, the wiring board 10 has a die attach surface 10a and a back surface 10b. The transmission-side surface acoustic wave filter chip 18 and the reception-side surface acoustic wave filter chip 19 are flip-chip mounted by bumps 26 on the die attach surface 10a. A sealing resin layer 16 is formed on the die attach surface 10 a so as to cover the transmission-side surface acoustic wave filter chip 18 and the reception-side surface acoustic wave filter chip 19. That is, the surface acoustic wave duplexer 1 of the present embodiment is a CSP (Chip Size Package) type acoustic wave duplexer.
　配線基板１０は、誘電体層と電極層とが交互に積層されてなる。具体的には、配線基板１０は、第１～第３の誘電体層４０～４２と第１～第４の電極層４４～４７との積層体により構成されている。第１の電極層４４は、第１の誘電体層４０の上に配置されている。第２の電極層４５は、第１の誘電体層４０と第２の誘電体層４１の間に配置されている。第３の電極層４６は、第２の誘電体層４１と第３の誘電体層４２の間に配置されている。第４の電極層４７は、第３の誘電体層４２の下に配置されている。 The wiring board 10 is formed by alternately laminating dielectric layers and electrode layers. Specifically, the wiring substrate 10 is constituted by a laminated body of first to third dielectric layers 40 to 42 and first to fourth electrode layers 44 to 47. The first electrode layer 44 is disposed on the first dielectric layer 40. The second electrode layer 45 is disposed between the first dielectric layer 40 and the second dielectric layer 41. The third electrode layer 46 is disposed between the second dielectric layer 41 and the third dielectric layer 42. The fourth electrode layer 47 is disposed under the third dielectric layer 42.
　第１～第３の誘電体層４０～４２のそれぞれは、例えば、樹脂や、アルミナなどのセラミックスなどにより構成することができる。すなわち、配線基板１０は、樹脂からなるプリント配線多層基板や、セラミック多層基板であってもよい。 Each of the first to third dielectric layers 40 to 42 can be made of, for example, a resin or ceramics such as alumina. That is, the wiring board 10 may be a printed wiring multilayer board made of resin or a ceramic multilayer board.
　なお、本実施形態では、配線基板が３つの誘電体層と４つの電極層との積層体により構成されている例について説明する。但し、本発明において、配線基板が有する誘電体層の層数及び電極層の層数は、特に限定されない。 In the present embodiment, an example will be described in which the wiring board is configured by a laminate of three dielectric layers and four electrode layers. However, in the present invention, the number of dielectric layers and the number of electrode layers of the wiring board are not particularly limited.
　図５は、本実施形態に係る弾性表面波デュプレクサ１における、配線基板１０の第１の電極層４４と第１の誘電体層４０との模式的透視平面図である。図６は、本実施形態に係る弾性表面波デュプレクサ１における、配線基板１０の第２の電極層４５と第２の誘電体層４１との模式的透視平面図である。図７は、本実施形態に係る弾性表面波デュプレクサ１における、配線基板１０の第３の電極層４６と第３の誘電体層４２との模式的透視平面図である。図８は、本実施形態に係る弾性表面波デュプレクサ１における、配線基板１０の第４の電極層４７の模式的透視平面図である。但し、図８においては、レジスト層６０の描画を省略している。図９は、本実施形態に係る弾性表面波デュプレクサ１における、配線基板１０の第４の電極層４７の模式的透視平面図である。なお、図５～図９は、送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９側から弾性表面波デュプレクサ１を透視した状態を示している。 FIG. 5 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. FIG. 6 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. FIG. 7 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. FIG. 8 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. However, in FIG. 8, drawing of the resist layer 60 is omitted. FIG. 9 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer 1 according to the present embodiment. 5 to 9 show a state in which the surface acoustic wave duplexer 1 is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
　図５に示すように、第１の電極層４４はランド電極層であり、第１の電極層４４と第１の誘電体層４０とは、配線基板１０のダイアタッチ面１０ａを構成している。第１の電極層４４は、ランド電極４４ａ～４４ｌにより構成されている。図６に示すように、第２の電極層４５は、電極４５ａ～４５ｊにより構成されている。図７に示すように、第３の電極層４６は、電極４６ａ～４６ｉにより構成されている。図９に示すように、裏面１０ｂの上には、レジスト層６０が形成されている。このレジスト層６０により、第４の電極層４７の一部が被覆され、アンテナ端子２１と、送信側信号端子２４と、第１及び第２の受信側信号端子２２ａ，２２ｂと、グラウンド電極４７ａとが形成されている。 As shown in FIG. 5, the first electrode layer 44 is a land electrode layer, and the first electrode layer 44 and the first dielectric layer 40 constitute a die attach surface 10 a of the wiring substrate 10. . The first electrode layer 44 is composed of land electrodes 44a to 44l. As shown in FIG. 6, the second electrode layer 45 is composed of electrodes 45a to 45j. As shown in FIG. 7, the third electrode layer 46 is composed of electrodes 46a to 46i. As shown in FIG. 9, a resist layer 60 is formed on the back surface 10b. The resist layer 60 covers a part of the fourth electrode layer 47, and includes the antenna terminal 21, the transmission side signal terminal 24, the first and second reception side signal terminals 22a and 22b, and the ground electrode 47a. Is formed.
　図１及び図３に示す送信フィルタ１４の出力端子１４ａは、バンプ２６により、図５に示すランド電極４４ｄに接続されている。ランド電極４４ｄは、第１の誘電体層４０に形成されたビアホール電極５１ａにより、図６に示す電極４５ｄに接続されている。また、図１及び図４に示す受信フィルタ１５の不平衡信号端子１５ａは、バンプ２６により、図５に示すランド電極４４ｇに接続されている。ランド電極４４ｇは、第１の誘電体層４０に形成されたビアホール電極５１ｂにより、電極４５ｄに接続されている。電極４５ｄは、第２の誘電体層４１に形成されたビアホール電極５２ａにより、図７に示す電極４６ｄに接続されている。電極４６ｄは、第３の誘電体層４２に形成されたビアホール電極５３ａにより、図１、図８及び図９に示すアンテナ端子２１に接続されている。 The output terminal 14a of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44d shown in FIG. The land electrode 44d is connected to the electrode 45d shown in FIG. 6 by a via hole electrode 51a formed in the first dielectric layer 40. Further, the unbalanced signal terminal 15a of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44g shown in FIG. The land electrode 44g is connected to the electrode 45d by a via hole electrode 51b formed in the first dielectric layer 40. The electrode 45d is connected to the electrode 46d shown in FIG. 7 by a via hole electrode 52a formed in the second dielectric layer 41. The electrode 46d is connected to the antenna terminal 21 shown in FIGS. 1, 8, and 9 by a via-hole electrode 53a formed in the third dielectric layer.
　図１及び図３に示す送信フィルタ１４の入力端子１４ｂは、バンプ２６により、図５に示すランド電極４４ｃに接続されている。ランド電極４４ｃは、第１の誘電体層４０に形成されたビアホール電極５１ｃにより、図６に示す電極４５ｃに接続されている。電極４５ｃは、第２の誘電体層４１に形成されたビアホール電極５２ｂにより、図７に示す電極４６ｃに接続されている。電極４６ｃは、第３の誘電体層４２に形成されたビアホール電極５３ｂにより、図１、図８及び図９に示す送信側信号端子２４に接続されている。 The input terminal 14b of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44c shown in FIG. The land electrode 44c is connected to the electrode 45c shown in FIG. 6 by a via hole electrode 51c formed in the first dielectric layer 40. The electrode 45c is connected to the electrode 46c shown in FIG. 7 by a via hole electrode 52b formed in the second dielectric layer 41. The electrode 46c is connected to the transmission-side signal terminal 24 shown in FIGS. 1, 8, and 9 by a via-hole electrode 53b formed in the third dielectric layer 42.
　図１及び図３に示す送信フィルタ１４の送信側グラウンド端子１４ｃは、バンプ２６により、図５に示すランド電極４４ｂに接続されている。ランド電極４４ｂは、第１の誘電体層４０に形成されたビアホール電極５１ｄにより、図６に示す電極４５ｂに接続されている。電極４５ｂは、第２の誘電体層４１に形成されたビアホール電極５２ｃにより、図７に示す電極４６ｂに接続されている。電極４５ｂと電極４６ｂなどにより、インダクタＬ２が構成されている。電極４６ｂは、第３の誘電体層４２に形成されたビアホール電極５３ｃにより、図８及び図９に示すグラウンド電極４７ａに接続されている。 The transmission-side ground terminal 14c of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44b shown in FIG. The land electrode 44b is connected to the electrode 45b shown in FIG. 6 by a via hole electrode 51d formed in the first dielectric layer 40. The electrode 45b is connected to the electrode 46b shown in FIG. 7 by a via hole electrode 52c formed in the second dielectric layer 41. An inductor L2 is constituted by the electrode 45b and the electrode 46b. The electrode 46b is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a via-hole electrode 53c formed in the third dielectric layer.
　図１及び図３に示す送信フィルタ１４の送信側グラウンド端子１４ｄは、バンプ２６により、図５に示すランド電極４４ｆに接続されている。ランド電極４４ｆは、第１の誘電体層４０に形成されたビアホール電極５１ｅにより、図６に示す電極４５ｆに接続されている。電極４５ｆは、第２の誘電体層４１に形成されたビアホール電極５２ｄにより、図７に示す電極４６ｅに接続されている。電極４５ｆと電極４６ｅなどによりインダクタＬ３が構成されている。電極４６ｅは、第３の誘電体層４２に形成されたビアホール電極５３ｄにより、図８及び図９に示すグラウンド電極４７ａに接続されている。すなわち、ランド電極４４ｂ，４４ｆと、電極４５ｂ，４５ｆと、電極４６ｂ，４６ｅと、グラウンド電極４７ａとは、送信側グラウンド端子１４ｃ，１４ｄと接続されている送信側グラウンド電極である。 The transmission-side ground terminal 14d of the transmission filter 14 shown in FIGS. 1 and 3 is connected to the land electrode 44f shown in FIG. The land electrode 44f is connected to the electrode 45f shown in FIG. 6 by a via hole electrode 51e formed in the first dielectric layer 40. The electrode 45f is connected to the electrode 46e shown in FIG. 7 by a via hole electrode 52d formed in the second dielectric layer 41. An inductor L3 is constituted by the electrode 45f and the electrode 46e. The electrode 46e is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a via-hole electrode 53d formed in the third dielectric layer. That is, the land electrodes 44b and 44f, the electrodes 45b and 45f, the electrodes 46b and 46e, and the ground electrode 47a are transmission-side ground electrodes connected to the transmission- side ground terminals 14c and 14d.
　図１及び図４に示す受信フィルタ１５の第１の平衡信号端子１５ｂは、バンプ２６により、図５に示すランド電極４４ｉに接続されている。ランド電極４４ｉは、第１の誘電体層４０に形成されたビアホール電極５１ｆにより、図６に示す電極４５ｊに接続されている。電極４５ｊは、第２の誘電体層４１に形成されたビアホール電極５２ｅにより、図７に示す電極４６ｉに接続されている。電極４６ｉは、第３の誘電体層４２に形成されたビアホール電極５３ｅにより、図１、図８及び図９に示す第１の受信側信号端子２２ａに接続されている。 The first balanced signal terminal 15b of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44i shown in FIG. The land electrode 44i is connected to the electrode 45j shown in FIG. 6 by a via hole electrode 51f formed in the first dielectric layer 40. The electrode 45j is connected to the electrode 46i shown in FIG. 7 by a via hole electrode 52e formed in the second dielectric layer 41. The electrode 46i is connected to the first reception-side signal terminal 22a shown in FIGS. 1, 8, and 9 by a via-hole electrode 53e formed in the third dielectric layer.
　図１及び図４に示す受信フィルタ１５の第２の平衡信号端子１５ｃは、バンプ２６により、図５に示すランド電極４４ｌに接続されている。ランド電極４４ｌは、第１の誘電体層４０に形成されたビアホール電極５１ｇにより、図６に示す電極４５ｉに接続されている。電極４５ｉは、第２の誘電体層４１に形成されたビアホール電極５２ｆにより、図７に示す電極４６ｈに接続されている。電極４６ｈは、第３の誘電体層４２に形成されたビアホール電極５３ｆにより、図１、図８及び図９に示す第２の受信側信号端子２２ｂに接続されている。 The second balanced signal terminal 15c of the reception filter 15 shown in FIGS. 1 and 4 is connected to the land electrode 44l shown in FIG. The land electrode 44l is connected to the electrode 45i shown in FIG. 6 by a via hole electrode 51g formed in the first dielectric layer 40. The electrode 45i is connected to the electrode 46h shown in FIG. 7 by a via hole electrode 52f formed in the second dielectric layer 41. The electrode 46h is connected to the second reception-side signal terminal 22b shown in FIGS. 1, 8, and 9 by a via-hole electrode 53f formed in the third dielectric layer 42.
　図４に示す受信フィルタ１５の不平衡信号端子側グラウンド端子１５ｄは、バンプ２６により、図５に示すランド電極４４ｊに接続されている。ランド電極４４ｊは、第１の誘電体層４０に形成されたビアホール電極５１ｈにより、図６に示す電極４５ｇに接続されている。電極４５ｇは、第２の誘電体層４１に形成された複数のビアホール電極５２ｇにより、図７に示す電極４６ｆに接続されている。電極４６ｆは、第３の誘電体層４２に形成された複数のビアホール電極５３ｇにより、図８及び図９に示すグラウンド電極４７ａに接続されている。すなわち、ランド電極４４ｊと、電極４５ｇと、電極４６ｆと、グラウンド電極４７ａとは、不平衡信号端子側グラウンド端子１５ｄと接続されている不平衡信号端子側グラウンド電極である。 The unbalanced signal terminal side ground terminal 15d of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44j shown in FIG. The land electrode 44j is connected to the electrode 45g shown in FIG. 6 by a via hole electrode 51h formed in the first dielectric layer 40. The electrode 45g is connected to the electrode 46f shown in FIG. 7 by a plurality of via hole electrodes 52g formed in the second dielectric layer 41. The electrode 46f is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53g formed in the third dielectric layer 42. That is, the land electrode 44j, the electrode 45g, the electrode 46f, and the ground electrode 47a are unbalanced signal terminal side ground electrodes connected to the unbalanced signal terminal side ground terminal 15d.
　図４に示す受信フィルタ１５の平衡信号端子側グラウンド端子１５ｅは、バンプ２６により、図５に示すランド電極４４ｈに接続されている。ランド電極４４ｈは、第１の誘電体層４０に形成されたビアホール電極５１ｉにより、図６に示す電極４５ｈに接続されている。電極４５ｈは、第２の誘電体層４１に形成された複数のビアホール電極５２ｈにより、図７に示す電極４６ｇに接続されている。電極４６ｇは、第３の誘電体層４２に形成された複数のビアホール電極５３ｈにより、図８及び図９に示すグラウンド電極４７ａに接続されている。 The balanced signal terminal side ground terminal 15e of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44h shown in FIG. The land electrode 44h is connected to the electrode 45h shown in FIG. 6 by a via hole electrode 51i formed in the first dielectric layer 40. The electrode 45h is connected to the electrode 46g shown in FIG. 7 by a plurality of via hole electrodes 52h formed in the second dielectric layer 41. The electrode 46g is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
　図４に示す受信フィルタ１５の平衡信号端子側グラウンド端子１５ｆは、バンプ２６により、図５に示すランド電極４４ｋに接続されている。ランド電極４４ｋは、第１の誘電体層４０に形成されたビアホール電極５１ｊにより、図６に示す電極４５ｈに接続されている。電極４５ｈは、第２の誘電体層４１に形成された複数のビアホール電極５２ｈにより、図７に示す電極４６ｇに接続されている。電極４６ｇは、第３の誘電体層４２に形成された複数のビアホール電極５３ｈにより、図８及び図９に示すグラウンド電極４７ａに接続されている。 The balanced signal terminal side ground terminal 15f of the reception filter 15 shown in FIG. 4 is connected to the land electrode 44k shown in FIG. The land electrode 44k is connected to the electrode 45h shown in FIG. 6 by a via hole electrode 51j formed in the first dielectric layer 40. The electrode 45h is connected to the electrode 46g shown in FIG. 7 by a plurality of via hole electrodes 52h formed in the second dielectric layer 41. The electrode 46g is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53h formed in the third dielectric layer 42.
　すなわち、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｇと、グラウンド電極４７ａとは、平衡信号端子側グラウンド端子１５ｅ，１５ｆと接続されている平衡信号端子側グラウンド電極である。 That is, the land electrodes 44k and 44h, the electrode 45h, the electrode 46g, and the ground electrode 47a are balanced signal terminal side ground electrodes connected to the balanced signal terminal side ground terminals 15e and 15f.
　図３に示す送信フィルタ１４のダミー端子１４ｅは、バンプ２６により、図５に示すランド電極４４ａに接続されている。ランド電極４４ａは、第１の誘電体層４０に形成されたビアホール電極５１ｋにより、図６に示す電極４５ａに接続されている。電極４５ａは、第２の誘電体層４１に形成されたビアホール電極５２ｉにより、図７に示す電極４６ａに接続されている。電極４６ａは、第３の誘電体層４２に形成された複数のビアホール電極５３ｉにより、図８及び図９に示すグラウンド電極４７ａに接続されている。 The dummy terminal 14e of the transmission filter 14 shown in FIG. 3 is connected to the land electrode 44a shown in FIG. The land electrode 44 a is connected to the electrode 45 a shown in FIG. 6 by a via hole electrode 51 k formed in the first dielectric layer 40. The electrode 45a is connected to the electrode 46a shown in FIG. 7 by a via hole electrode 52i formed in the second dielectric layer 41. The electrode 46a is connected to the ground electrode 47a shown in FIGS. 8 and 9 by a plurality of via hole electrodes 53i formed in the third dielectric layer.
　図３に示す送信フィルタ１４のダミー端子１４ｆは、バンプ２６により、図５に示すランド電極４４ｅに接続されている。ランド電極４４ｅは、第１の誘電体層４０に形成されたビアホール電極５１ｌにより、図６に示す電極４５ｅに接続されている。 The dummy terminal 14f of the transmission filter 14 shown in FIG. 3 is connected to the land electrode 44e shown in FIG. The land electrode 44e is connected to the electrode 45e shown in FIG. 6 by a via hole electrode 51l formed in the first dielectric layer 40.
　以上説明したように、本実施形態では、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面において共通化されている。具体的には、ランド電極４４ｊと、電極４５ｇと、電極４６ｆと、グラウンド電極４７ａとからなる不平衡信号端子側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｇと、グラウンド電極４７ａとからなる平衡信号端子側グラウンド電極とは、配線基板１０の裏面１０ｂにおいて、グラウンド電極４７ａとして共通化されている。 As described above, in this embodiment, the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are shared on the back surface of the wiring board. Specifically, an unbalanced signal terminal side ground electrode including a land electrode 44j, an electrode 45g, an electrode 46f, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, an electrode 46g, and a ground electrode The ground signal terminal side ground electrode composed of 47 a is shared as the ground electrode 47 a on the back surface 10 b of the wiring board 10.
　また、本実施形態では、送信側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面において共通化されている。具体的には、ランド電極４４ｂ，４４ｆと、電極４５ｂ，４５ｆと、電極４６ｂ，４６ｅと、グラウンド電極４７ａとからなる送信側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｇと、グラウンド電極４７ａとからなる平衡信号端子側グラウンド電極とは、配線基板１０の裏面１０ｂにおいて、グラウンド電極４７ａとして共通化されている。 In this embodiment, the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board. Specifically, a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, electrodes 46b and 46e, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, and an electrode 46g The balanced signal terminal side ground electrode composed of the ground electrode 47 a is shared as the ground electrode 47 a on the back surface 10 b of the wiring substrate 10.
　本実施形態では、不平衡信号がグラウンドに流れる経路である、送信側グラウンド電極及び不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である、平衡信号端子側グラウンド電極とは、配線基板１０の裏面１０ｂのグラウンド電極４７ａにおいて初めて共通化されており、それまでは互いに接続されることなく設けられている。 In the present embodiment, the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode, which are paths through which the unbalanced signal flows to the ground, and the balanced signal terminal-side ground electrode, which is the path through which the balanced signal flows to the ground, are wired. It is common for the first time with the ground electrode 47a on the back surface 10b of the substrate 10, and until then, it is provided without being connected to each other.
　このため、不平衡信号がグラウンドに流れる経路を介して第１及び第２の受信側信号端子２２ａ，２２ｂに伝送されることを抑制することができる。従って、コモンモードアイソレーションを大きくすることができる。以下、この効果について具体例に基づいて詳細に説明する。 For this reason, it is possible to prevent the unbalanced signal from being transmitted to the first and second reception- side signal terminals 22a and 22b through the path flowing to the ground. Therefore, common mode isolation can be increased. Hereinafter, this effect will be described in detail based on specific examples.
　第１の実施例として、上記第１の実施形態に係る弾性表面波デュプレクサ１と実質的に同様の構成を有する弾性表面波デュプレクサを作製した。この第１の実施例に係る弾性表面波デュプレクサのコモンモードアイソレーション特性を図２０及び図２６に示す。 As a first example, a surface acoustic wave duplexer having a configuration substantially similar to that of the surface acoustic wave duplexer 1 according to the first embodiment was manufactured. The common mode isolation characteristics of the surface acoustic wave duplexer according to the first embodiment are shown in FIGS.
　上記第１の実施例に係る弾性表面波デュプレクサの比較例として、以下の第１～第３の比較例に係る弾性表面波デュプレクサを用意した。なお、第１～第３の比較例の説明について、上記第１の実施形態と実質的に共通の機能を有する部材を共通の符号で参照し、説明を省略する。 As a comparative example of the surface acoustic wave duplexer according to the first example, surface acoustic wave duplexers according to the following first to third comparative examples were prepared. In the description of the first to third comparative examples, members having substantially the same functions as those of the first embodiment are referred to by the same reference numerals, and the description thereof is omitted.
　第１～第３の比較例のそれぞれに係る弾性表面波デュプレクサは、上記第１の実施例に係る弾性表面波デュプレクサと、配線基板１０を除いては、実質的に同様の構成を有する。 The surface acoustic wave duplexer according to each of the first to third comparative examples has substantially the same configuration as the surface acoustic wave duplexer according to the first embodiment except for the wiring board 10.
　第１の比較例における配線基板１０の構成を図１０～図１４に示す。図１０は、第１の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第１の電極層４４と第１の誘電体層４０との模式的透視平面図である。図１１は、第１の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第２の電極層４５と第２の誘電体層４１との模式的透視平面図である。図１２は、第１の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第３の電極層４６と第３の誘電体層４２との模式的透視平面図である。図１３は、第１の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。但し、図１３においては、レジスト層６０の描画を省略している。図１４は、第１の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。なお、図１０～図１４は、送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９側から第１の比較例に係る弾性表面波デュプレクサを透視した状態を示している。 10 to 14 show the configuration of the wiring board 10 in the first comparative example. FIG. 10 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. FIG. 11 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. FIG. 12 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. FIG. 13 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. However, in FIG. 13, drawing of the resist layer 60 is omitted. FIG. 14 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the first comparative example. 10 to 14 show a state in which the surface acoustic wave duplexer according to the first comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
　第１の比較例では、図１２に示すように、第１の実施例に係る弾性表面波デュプレクサの電極４６ｆと電極４６ｇとに代えて電極４６ｘが配置されている。電極４６ｘは、第３の誘電体層４２に形成された複数のビアホール電極５３ｘにより、図１３及び図１４に示すグラウンド電極４７ａに接続されている。よって、第１の比較例では、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面ではなく、配線基板の内部に配置された電極層において共通化されている。具体的には、第１の比較例では、ランド電極４４ｊと、電極４５ｇと、電極４６ｘと、グラウンド電極４７ａとからなる不平衡信号端子側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｘと、グラウンド電極４７ａとからなる平衡信号端子側グラウンド電極とは、第３の電極層４６の電極４６ｘ及び第４の電極層４７のグラウンド電極４７ａとして共通化されている。第１の比較例に係る弾性表面波デュプレクサのコモンモードアイソレーション特性を図２０に示す。 In the first comparative example, as shown in FIG. 12, an electrode 46x is arranged instead of the electrode 46f and the electrode 46g of the surface acoustic wave duplexer according to the first embodiment. The electrode 46x is connected to the ground electrode 47a shown in FIGS. 13 and 14 by a plurality of via hole electrodes 53x formed in the third dielectric layer 42. Therefore, in the first comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. . Specifically, in the first comparative example, the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46x, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45h The balanced signal terminal side ground electrode composed of the electrode 46x and the ground electrode 47a is shared as the electrode 46x of the third electrode layer 46 and the ground electrode 47a of the fourth electrode layer 47. FIG. 20 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the first comparative example.
　第２の比較例における配線基板１０の構成を図１５～図１９に示す。図１５は、第２の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第１の電極層４４と第１の誘電体層４０との模式的透視平面図である。図１６は、第２の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第２の電極層４５と第２の誘電体層４１との模式的透視平面図である。図１７は、第２の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第３の電極層４６と第３の誘電体層４２との模式的透視平面図である。図１８は、第２の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。但し、図１８においては、レジスト層６０の描画を省略している。図１９は、第２の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。なお、図１５～図１９は、送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９側から第２の比較例に係る弾性表面波デュプレクサを透視した状態を示している。 FIG. 15 to FIG. 19 show the configuration of the wiring board 10 in the second comparative example. FIG. 15 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. FIG. 16 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. FIG. 17 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. FIG. 18 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. However, in FIG. 18, the drawing of the resist layer 60 is omitted. FIG. 19 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second comparative example. 15 to 19 show a state in which the surface acoustic wave duplexer according to the second comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
　第２の比較例では、図１６及び図１７に示すように、第１の実施例に係る弾性表面波デュプレクサの電極４５ｇと電極４５ｈとに代えて電極４５ｘが配置されており、電極４６ｆと電極４６ｇとに代えて電極４６ｘが配置されている。電極４５ｘは、第２の誘電体層４１に形成された複数のビアホール電極５２ｘにより、電極４６ｘに接続されている。電極４６ｘは、第３の誘電体層４２に形成された複数のビアホール電極５３ｘにより、図１８及び図１９に示すグラウンド電極４７ａに接続されている。よって、第２の比較例では、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面ではなく、配線基板の内部に配置された電極層において共通化されている。具体的には、第２の比較例では、ランド電極４４ｊと、電極４５ｘと、電極４６ｘと、グラウンド電極４７ａとからなる不平衡信号端子側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｘと、電極４６ｘと、グラウンド電極４７ａとからなる平衡信号端子側グラウンド電極とは、第２の電極層４５の電極４５ｘ、第３の電極層４６の電極４６ｘ、第４の電極層４７のグラウンド電極４７ａとして共通化されている。第２の比較例に係る弾性表面波デュプレクサのコモンモードアイソレーション特性を図２０に示す。 In the second comparative example, as shown in FIGS. 16 and 17, an electrode 45x is disposed in place of the electrode 45g and the electrode 45h of the surface acoustic wave duplexer according to the first embodiment, and the electrode 46f and the electrode An electrode 46x is disposed instead of 46g. The electrode 45x is connected to the electrode 46x by a plurality of via hole electrodes 52x formed in the second dielectric layer 41. The electrode 46x is connected to the ground electrode 47a shown in FIGS. 18 and 19 by a plurality of via hole electrodes 53x formed in the third dielectric layer. Therefore, in the second comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. . Specifically, in the second comparative example, the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45x, the electrode 46x, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45x The balanced signal terminal side ground electrode composed of the electrode 46x and the ground electrode 47a includes the electrode 45x of the second electrode layer 45, the electrode 46x of the third electrode layer 46, and the ground electrode 47a of the fourth electrode layer 47. As common. FIG. 20 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the second comparative example.
　第３の比較例における配線基板１０の構成を図２１～図２５に示す。図２１は、第３の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第１の電極層４４と第１の誘電体層４０との模式的透視平面図である。図２２は、第３の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第２の電極層４５と第２の誘電体層４１との模式的透視平面図である。図２３は、第３の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第３の電極層４６と第３の誘電体層４２との模式的透視平面図である。図２４は、第３の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。但し、図２４においては、レジスト層６０の描画を省略している。図２５は、第３の比較例に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。なお、図２１～図２５は、送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９側から第３の比較例に係る弾性表面波デュプレクサを透視した状態を示している。 21 to 25 show the configuration of the wiring board 10 in the third comparative example. FIG. 21 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. FIG. 22 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. FIG. 23 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. FIG. 24 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. However, in FIG. 24, drawing of the resist layer 60 is omitted. FIG. 25 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the third comparative example. 21 to 25 show a state in which the surface acoustic wave duplexer according to the third comparative example is seen through from the transmitting surface acoustic wave filter chip 18 and the receiving surface acoustic wave filter chip 19 side.
　第３の比較例では、図２３に示すように、第１の実施例に係る弾性表面波デュプレクサの電極４６ａと、電極４６ｂと、電極４６ｅと、電極４６ｆと、電極４６ｇとに代えて電極４６ｙが配置されている。電極４６ｙは、第３の誘電体層４２に形成された複数のビアホール電極５３ｙにより、図２４及び図２５に示すグラウンド電極４７ａに接続されている。よって、第３の比較例では、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面ではなく、配線基板の内部に配置された電極層において共通化されている。具体的には、第３の比較例では、ランド電極４４ｊと、電極４５ｇと、電極４６ｙと、グラウンド電極４７ａとからなる不平衡信号端子側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｙと、グラウンド電極４７ａとからなる平衡信号端子側グラウンド電極とは、第３の電極層４６の電極４６ｙ及び第４の電極層４７のグラウンド電極４７ａとして共通化されている。また、第３の比較例では、送信側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板の裏面ではなく、配線基板の内部に配置された電極層において共通化されている。具体的には、ランド電極４４ｂ，４４ｆと、電極４５ｂ，４５ｆと、電極４６ｙと、グラウンド電極４７ａとからなる送信側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｙと、グラウンド電極４７ａとからなる平衡信号端子側グラウンド電極とは、第３の電極層４６の電極４６ｙ及び第４の電極層４７のグラウンド電極４７ａとして共通化されている。第３の比較例に係る弾性表面波デュプレクサのコモンモードアイソレーション特性を図２６に示す。 In the third comparative example, as shown in FIG. 23, instead of the electrode 46a, the electrode 46b, the electrode 46e, the electrode 46f, and the electrode 46g of the surface acoustic wave duplexer according to the first example, an electrode 46y is used. Is arranged. The electrode 46y is connected to the ground electrode 47a shown in FIGS. 24 and 25 by a plurality of via hole electrodes 53y formed in the third dielectric layer. Therefore, in the third comparative example, the unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are shared by the electrode layer disposed inside the wiring board, not the back surface of the wiring board. . Specifically, in the third comparative example, the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46y, and the ground electrode 47a, the land electrodes 44k and 44h, and the electrode 45h The balanced signal terminal side ground electrode composed of the electrode 46y and the ground electrode 47a is shared as the electrode 46y of the third electrode layer 46 and the ground electrode 47a of the fourth electrode layer 47. In the third comparative example, the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared in the electrode layer disposed inside the wiring board, not the back surface of the wiring board. Specifically, a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, an electrode 46y, and a ground electrode 47a, land electrodes 44k and 44h, an electrode 45h, an electrode 46y, and a ground The balanced signal terminal side ground electrode composed of the electrode 47 a is shared as the electrode 46 y of the third electrode layer 46 and the ground electrode 47 a of the fourth electrode layer 47. FIG. 26 shows common mode isolation characteristics of the surface acoustic wave duplexer according to the third comparative example.
　なお、第１の実施例並びに第１～第３の比較例のそれぞれに係る弾性表面波デュプレクサの送信周波数帯（１８５０ＭＨｚ～１９１０ＭＨｚ）におけるコモンモードアイソレーションは、
　第１の実施例：５５．４ｄＢ、
　第１の比較例：５４．０ｄＢ、
　第２の比較例：５２．６ｄＢ、
　第３の比較例：４２．９ｄＢ、
であった。 The common mode isolation in the transmission frequency band (1850 MHz to 1910 MHz) of the surface acoustic wave duplexer according to each of the first example and the first to third comparative examples is
First embodiment: 55.4 dB,
First comparative example: 54.0 dB,
Second comparative example: 52.6 dB,
Third comparative example: 42.9 dB,
Met.
　これらの結果から、不平衡信号がグラウンドに流れる経路である不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である平衡信号端子側グラウンド電極とを、配線基板１０の裏面１０ｂ以外の部分においては共通化せず、裏面１０ｂにおいて共通化することにより、コモンモードアイソレーションを大きくすることができることが分かる。 From these results, the unbalanced signal terminal side ground electrode, which is the path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is the path through which the balanced signal flows to the ground, other than the back surface 10b of the wiring board 10 are obtained. It can be seen that the common mode isolation can be increased by using the back surface 10b instead of the common part.
　また、第３の比較例において送信周波数帯におけるコモンモードアイソレーションが最も悪かったことから、不平衡信号がグラウンドに流れる経路である不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である平衡信号端子側グラウンド電極とを、配線基板１０の裏面１０ｂにおいて共通化すると共に、不平衡信号がグラウンドに流れる経路である送信側グラウンド電極も裏面１０ｂにおいて共通化することが好ましいことが分かる。 Further, since the common mode isolation in the transmission frequency band was the worst in the third comparative example, the unbalanced signal terminal side ground electrode that is the path through which the unbalanced signal flows to the ground and the path through which the balanced signal flows to the ground It can be seen that it is preferable to share a certain balanced signal terminal side ground electrode on the back surface 10b of the wiring board 10 and also share a transmitting side ground electrode, which is a path through which an unbalanced signal flows to the ground, on the back surface 10b.
　なお、本実施形態において、不平衡信号がグラウンドに流れる経路である、送信側グラウンド電極及び不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である、平衡信号端子側グラウンド電極とが、配線基板１０の裏面１０ｂにおいて共通化されている場合であっても、コモンモードアイソレーションを大きくすることができるのは、本実施形態に係る弾性表面波デュプレクサ１が実装されるＲＦ回路のプリント配線基板は、非常に接地抵抗が小さいため、裏面１０ｂ上において共通化されたグラウンド電極４７ａに流れた不平衡信号は、第１及び第２の受信側信号端子２２ａ，２２ｂ側には伝送されにくく、ＲＦ回路のプリント配線基板側に主として伝送されるためであると考えられる。 In this embodiment, the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode, which are paths through which the unbalanced signal flows to the ground, and the balanced signal terminal-side ground electrode, which is a path through which the balanced signal flows to the ground. Even when the wiring substrate 10 is shared on the back surface 10b, the common mode isolation can be increased because the printed circuit of the RF circuit on which the surface acoustic wave duplexer 1 according to this embodiment is mounted. Since the wiring board has a very small grounding resistance, an unbalanced signal that has flowed to the common ground electrode 47a on the back surface 10b is difficult to be transmitted to the first and second receiving signal terminals 22a and 22b. This is considered to be mainly due to transmission to the printed circuit board side of the RF circuit.
　また、図３３に示す弾性波デュプレクサ１００では、第１及び第２の受信側信号端子１０３ａ，１０３ｂが接続されているＩＤＴ電極１０６，１０７は、グラウンドに接続されていない浮き電極（フロート電極）であるため、同相モードの信号が、平衡信号が伝送される信号ラインからグラウンドに流れにくいため、コモンモードアイソレーションを大きくすることができないのに対して、本実施形態において、第１及び第２の受信側信号端子２２ａ，２２ｂが接続されているＩＤＴ電極１５Ａ２，１５Ｂ２は、グラウンドに接続されているため、同相モードの信号が、平衡信号が伝送される信号ラインからグラウンドに流れやすいため、コモンモードアイソレーションを大きくすることができる。 In the elastic wave duplexer 100 shown in FIG. 33, the IDT electrodes 106 and 107 to which the first and second receiving- side signal terminals 103a and 103b are connected are floating electrodes (float electrodes) that are not connected to the ground. Therefore, the common mode isolation cannot be increased because the common mode signal hardly flows from the signal line through which the balanced signal is transmitted to the ground. Since the IDT electrodes 15A2 and 15B2 to which the reception- side signal terminals 22a and 22b are connected are connected to the ground, the common-mode signal easily flows from the signal line through which the balanced signal is transmitted to the ground. Isolation can be increased.
　以下、本発明を実施した好ましい形態の他の例について説明する。以下の実施形態の説明において上記第１の実施形態と実質的に共通の機能を有する部材を共通の符号で参照し、説明を省略する。 Hereinafter, other examples of preferred embodiments in which the present invention is implemented will be described. In the following description of the embodiments, members having substantially the same functions as those of the first embodiment are referred to by common reference numerals, and description thereof is omitted.
　（第２の実施形態）
　図２７は、第２の実施形態に係る弾性表面波デュプレクサにおける、配線基板１０の第１の電極層４４と第１の誘電体層４０との模式的透視平面図である。図２８は、第２の実施形態に係る弾性表面波デュプレクサにおける、配線基板１０の第２の電極層４５と第２の誘電体層４１との模式的透視平面図である。図２９は、第２の実施形態に係る弾性表面波デュプレクサにおける、配線基板１０の第３の電極層４６と第３の誘電体層４２との模式的透視平面図である。図３０は、第２の実施形態に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。但し、図３０においては、レジスト層６０の描画を省略している。図３１は、第２の実施形態に係る弾性表面波デュプレクサにおける、配線基板１０の第４の電極層４７の模式的透視平面図である。なお、図２７～図３１は、送信側弾性表面波フィルタチップ１８及び受信側弾性表面波フィルタチップ１９側から第２の実施形態に係る弾性表面波デュプレクサを透視した状態を示している。 (Second Embodiment)
FIG. 27 is a schematic perspective plan view of the first electrode layer 44 and the first dielectric layer 40 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment. FIG. 28 is a schematic perspective plan view of the second electrode layer 45 and the second dielectric layer 41 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment. FIG. 29 is a schematic perspective plan view of the third electrode layer 46 and the third dielectric layer 42 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment. FIG. 30 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment. However, in FIG. 30, drawing of the resist layer 60 is omitted. FIG. 31 is a schematic perspective plan view of the fourth electrode layer 47 of the wiring board 10 in the surface acoustic wave duplexer according to the second embodiment. 27 to 31 show a state in which the surface acoustic wave duplexer according to the second embodiment is seen through from the transmission surface acoustic wave filter chip 18 and the reception surface acoustic wave filter chip 19 side.
　本実施形態の弾性表面波デュプレクサは、配線基板１０の構成を除いては、上記第１の実施形態の弾性表面波デュプレクサ１と実質的に同様の構成を有する。本実施形態においては、図２９及び図３０に示すように、第１の実施例に係る弾性表面波デュプレクサの電極４６ｂと電極４６ｅとに代えて電極４６ｚが配置されており、グラウンド電極４７ａに代えてグラウンド電極４７ｂ，４７ｃ，４７ｄ及び電極４７ｅが配置されている。グラウンド電極４７ｂは、第３の誘電体層４２に形成された複数のビアホール電極５３ｈにより、電極４６ｇに接続されている。グラウンド電極４７ｃは、第３の誘電体層４２に形成されたビアホール電極５３ｚにより、電極４６ｚに接続されている。グラウンド電極４７ｄは、第３の誘電体層４２に形成された複数のビアホール電極５３ｇにより、電極４６ｆに接続されている。電極４７ｅは、第３の誘電体層４２に形成された複数のビアホール電極５３ｉにより、電極４６ａに接続されている。 The surface acoustic wave duplexer of the present embodiment has substantially the same configuration as the surface acoustic wave duplexer 1 of the first embodiment except for the configuration of the wiring board 10. In this embodiment, as shown in FIGS. 29 and 30, an electrode 46z is arranged instead of the electrode 46b and the electrode 46e of the surface acoustic wave duplexer according to the first example, and the electrode 46z is replaced with the ground electrode 47a. The ground electrodes 47b, 47c, 47d and the electrode 47e are disposed. The ground electrode 47b is connected to the electrode 46g by a plurality of via hole electrodes 53h formed in the third dielectric layer 42. The ground electrode 47c is connected to the electrode 46z by a via hole electrode 53z formed in the third dielectric layer 42. The ground electrode 47d is connected to the electrode 46f by a plurality of via hole electrodes 53g formed in the third dielectric layer 42. The electrode 47e is connected to the electrode 46a by a plurality of via hole electrodes 53i formed in the third dielectric layer 42.
　よって、本実施形態の弾性波デュプレクサでは、不平衡信号端子側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板で互いに接続されていない。具体的には、ランド電極４４ｊと、電極４５ｇと、電極４６ｆと、グラウンド電極４７ｄとからなる不平衡信号端子側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｇと、グラウンド電極４７ｂとからなる平衡信号端子側グラウンド電極とは、配線基板１０で互いに接続されていない。 Therefore, in the elastic wave duplexer of this embodiment, the unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are not connected to each other by the wiring board. Specifically, the unbalanced signal terminal side ground electrode including the land electrode 44j, the electrode 45g, the electrode 46f, and the ground electrode 47d, the land electrodes 44k and 44h, the electrode 45h, the electrode 46g, and the ground electrode The balanced signal terminal-side ground electrodes formed of 47b are not connected to each other by the wiring board 10.
　また、本実施形態では、送信側グラウンド電極と、平衡信号端子側グラウンド電極とは、配線基板で互いに接続されていない。具体的には、ランド電極４４ｂ，４４ｆと、電極４５ｂ，４５ｆと、電極４６ｚと、グラウンド電極４７ｃとからなる送信側グラウンド電極と、ランド電極４４ｋ，４４ｈと、電極４５ｈと、電極４６ｇと、グラウンド電極４７ｂとからなる平衡信号端子側グラウンド電極とは、配線基板１０で互いに接続されていない。 In this embodiment, the transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board. Specifically, a transmission-side ground electrode including land electrodes 44b and 44f, electrodes 45b and 45f, an electrode 46z, and a ground electrode 47c, land electrodes 44k and 44h, an electrode 45h, an electrode 46g, and a ground The balanced signal terminal side ground electrode composed of the electrode 47 b is not connected to each other by the wiring board 10.
　本実施形態では、不平衡信号がグラウンドに流れる経路である、送信側グラウンド電極及び不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である、平衡信号端子側グラウンド電極とは、互いに接続されることなく設けられている。 In the present embodiment, the transmission-side ground electrode and the unbalanced signal terminal-side ground electrode, which are paths through which the unbalanced signal flows to the ground, and the balanced signal terminal-side ground electrode, which is the path through which the balanced signal flows to the ground, are mutually connected. It is provided without being connected.
　本実施形態においても、不平衡信号が第１及び第２の受信側信号端子２２ａ，２２ｂ側に伝送されることを抑制できるため、上記第１の実施形態と同様に、コモンモードアイソレーションを大きくすることができる。 Also in the present embodiment, since unbalanced signals can be prevented from being transmitted to the first and second receiving signal terminals 22a and 22b, common mode isolation is greatly increased as in the first embodiment. can do.
　具体的に、第２の実施例として、上記第２の実施形態に係る弾性表面波デュプレクサと実質的に同様の構成を有する弾性表面波デュプレクサを作製した。その弾性表面波デュプレクサのコモンモードアイソレーション特性を、上記第１の実施形態の弾性表面波デュプレクサ１のコモンモードアイソレーション特性と合わせて図３２に示す。 Specifically, as a second example, a surface acoustic wave duplexer having substantially the same configuration as the surface acoustic wave duplexer according to the second embodiment was manufactured. FIG. 32 shows the common mode isolation characteristics of the surface acoustic wave duplexer together with the common mode isolation characteristics of the surface acoustic wave duplexer 1 of the first embodiment.
　図３２に示すように、第２の実施例に係る弾性表面波デュプレクサの送信周波数帯（１８５０ＭＨｚ～１９１０ＭＨｚ）におけるコモンモードアイソレーションは、５５．７ｄＢであった。図３２に示す結果から、不平衡信号がグラウンドに流れる経路である不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である平衡信号端子側グラウンド電極とを、配線基板１０で互いに接続しない場合も、不平衡信号がグラウンドに流れる経路である不平衡信号端子側グラウンド電極と、平衡信号がグラウンドに流れる経路である平衡信号端子側グラウンド電極とを、配線基板１０の裏面１０ｂ以外の部分においては共通化せず、裏面１０ｂにおいて共通化する場合と同様に、コモンモードアイソレーションを大きくすることができることが分かる。 As shown in FIG. 32, the common mode isolation in the transmission frequency band (1850 MHz to 1910 MHz) of the surface acoustic wave duplexer according to the second example was 55.7 dB. From the results shown in FIG. 32, the unbalanced signal terminal side ground electrode, which is the path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is the path through which the balanced signal flows to the ground, are connected to each other by the wiring board 10. Even if not, the unbalanced signal terminal side ground electrode, which is a path through which the unbalanced signal flows to the ground, and the balanced signal terminal side ground electrode, which is a path through which the balanced signal flows to the ground, are portions other than the back surface 10b of the wiring board 10. It can be seen that the common mode isolation can be increased in the same manner as in the case of commoning in the back surface 10b.
１…弾性表面波デュプレクサ
１０…配線基板
１０ａ…ダイアタッチ面
１０ｂ…裏面
１４…送信フィルタ
１４ａ…出力端子
１４ｂ…入力端子
１４ｃ，１４ｄ…送信側グラウンド端子
１４ｅ，１４ｆ…ダミー端子
１５…受信フィルタ
１５Ａ…第１の縦結合共振子型弾性表面波フィルタ素子
１５Ｂ…第２の縦結合共振子型弾性表面波フィルタ素子
１５Ａ１～１５Ａ３，１５Ｂ１～１５Ｂ３…ＩＤＴ電極
１５Ａ４，１５Ａ５，１５Ｂ４，１５Ｂ５…反射器
１５ａ…不平衡信号端子
１５ｂ…第１の平衡信号端子
１５ｃ…第２の平衡信号端子
１５ｄ…不平衡信号端子側グラウンド端子
１５ｅ，１５ｆ…平衡信号端子側グラウンド端子
１６…封止樹脂層
１７ａ～１７ｅ…弾性表面波共振子
１８…送信側弾性表面波フィルタチップ
１９…受信側弾性表面波フィルタチップ
１８Ａ，１９Ａ…圧電基板
１８Ｂ，１９Ｂ…電極
２１…アンテナ端子
２２ａ…第１の受信側信号端子
２２ｂ…第２の受信側信号端子
２４…送信側信号端子
２６…バンプ
３３…直列腕
３７ａ～３７ｄ…並列腕
４０…第１の誘電体層
４１…第２の誘電体層
４２…第３の誘電体層
４４…第１の電極層
４４ａ～４４ｌ…ランド電極
４５…第２の電極層
４５ａ～４５ｊ，４５ｘ…電極
４６…第３の電極層
４６ａ～４６ｉ，４６ｘ～４６ｚ…電極
４７…第４の電極層
４７ａ～４７ｄ…グラウンド電極
４７ｅ…電極
５１ａ～５１ｌ，５２ａ～５２ｉ，５２ｘ，５３ａ～５３ｉ，５３ｘ～５３ｚ…ビアホール電極
６０…レジスト層
Ｌ１～Ｌ３…インダクタ
Ｐ１，Ｐ２，Ｐ３，Ｐ４…並列腕共振子
Ｓ１，Ｓ２，Ｓ３，Ｓ４…直列腕共振子
Ｃ…キャパシタ DESCRIPTION OF SYMBOLS 1 ... Surface acoustic wave duplexer 10 ... Wiring board 10a ... Die attachment surface 10b ... Back surface 14 ... Transmission filter 14a ... Output terminal 14b ... Input terminal 14c, 14d ... Transmission side ground terminal 14e, 14f ... Dummy terminal 15 ... Reception filter 15A ... First longitudinally coupled resonator type surface acoustic wave filter element 15B ... Second longitudinally coupled resonator type surface acoustic wave filter elements 15A1 to 15A3, 15B1 to 15B3 ... IDT electrodes 15A4, 15A5, 15B4, 15B5 ... Reflector 15a ... Unbalanced signal terminal 15b ... 1st balanced signal terminal 15c ... 2nd balanced signal terminal 15d ... Unbalanced signal terminal side ground terminal 15e, 15f ... Balanced signal terminal side ground terminal 16 ... Sealing resin layers 17a-17e ... Elasticity Surface wave resonator 18... Transmission side surface acoustic wave filter chip 19... Reception side surface acoustic wave filter Tape chip 18A, 19A ... Piezoelectric substrate 18B, 19B ... Electrode 21 ... Antenna terminal 22a ... First reception side signal terminal 22b ... Second reception side signal terminal 24 ... Transmission side signal terminal 26 ... Bump 33 ... Series arms 37a-37d ... parallel arm 40 ... first dielectric layer 41 ... second dielectric layer 42 ... third dielectric layer 44 ... first electrode layers 44a to 44l ... land electrode 45 ... second electrode layers 45a to 45j , 45x ... electrode 46 ... third electrode layers 46a-46i, 46x-46z ... electrode 47 ... fourth electrode layers 47a-47d ... ground electrode 47e ... electrodes 51a-51l, 52a-52i, 52x, 53a-53i, 53x to 53z ... via hole electrode 60 ... resist layers L1 to L3 ... inductors P1, P2, P3, P4 ... parallel arm resonators S1, S2, S3, S4 ... series arm resonator C ... capacity

Claims (5)

  1. 　弾性波フィルタにより構成されている送信フィルタと、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性波フィルタにより構成されている受信フィルタとを備える弾性波分波器であって、
    　ダイアタッチ面と裏面とを有する配線基板と、前記ダイアタッチ面の上に実装されている少なくとも１つの弾性波フィルタチップとを備え、
    　前記弾性波フィルタチップは、圧電基板と、前記圧電基板の上に形成されており、前記受信フィルタを構成する電極とを有し、
    　前記受信フィルタを構成する電極は、不平衡信号端子と、第１及び第２の平衡信号端子と、不平衡信号端子側グラウンド端子と、平衡信号端子側グラウンド端子と、複数のＩＤＴ電極とを含み、
    　前記不平衡信号端子側グラウンド端子と、前記平衡信号端子側グラウンド端子とは、前記圧電基板上で互いに接続されておらず、
    　前記複数のＩＤＴ電極は、
    　前記不平衡信号端子に接続されているくし歯状電極と、前記不平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する不平衡信号端子側ＩＤＴ電極と、
    　前記第１の平衡信号端子に接続されているくし歯状電極と、前記平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する第１の平衡信号端子側ＩＤＴ電極と、
    　前記第２の平衡信号端子に接続されているくし歯状電極と、前記平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する第２の平衡信号端子側ＩＤＴ電極と、を有し、
    　前記配線基板は、前記不平衡信号端子側グラウンド端子と接続されている不平衡信号端子側グラウンド電極と、前記平衡信号端子側グラウンド端子と接続されている平衡信号端子側グラウンド電極とを有し、
    　前記不平衡信号端子側グラウンド電極と、前記平衡信号端子側グラウンド電極とは、前記配線基板で互いに接続されていない、弾性波分波器。     An acoustic wave duplexer comprising: a transmission filter constituted by an elastic wave filter; and a reception filter constituted by a balanced type longitudinally coupled resonator type elastic wave filter having a balance-unbalance conversion function,
    A wiring board having a die attach surface and a back surface; and at least one elastic wave filter chip mounted on the die attach surface;
    The acoustic wave filter chip includes a piezoelectric substrate and an electrode that is formed on the piezoelectric substrate and constitutes the reception filter,
    The electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes. ,
    The unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate,
    The plurality of IDT electrodes are:
    An unbalanced signal terminal-side IDT electrode having a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal-side ground terminal;
    A first balanced signal terminal-side IDT electrode having a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal;
    A second balanced signal terminal-side IDT electrode having a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal; And
    The wiring board has an unbalanced signal terminal side ground electrode connected to the unbalanced signal terminal side ground terminal, and a balanced signal terminal side ground electrode connected to the balanced signal terminal side ground terminal,
    The unbalanced signal terminal side ground electrode and the balanced signal terminal side ground electrode are elastic wave duplexers that are not connected to each other on the wiring board.
  2. 　弾性波フィルタにより構成されている送信フィルタと、平衡－不平衡変換機能を有するバランス型の縦結合共振子型弾性波フィルタにより構成されている受信フィルタとを備える弾性波分波器であって、
    　ダイアタッチ面と裏面とを有する配線基板と、前記ダイアタッチ面の上に実装されている少なくとも１つの弾性波フィルタチップとを備え、
    　前記弾性波フィルタチップは、圧電基板と、前記圧電基板の上に形成されており、前記受信フィルタを構成する電極とを有し、
    　前記受信フィルタを構成する電極は、不平衡信号端子と、第１及び第２の平衡信号端子と、不平衡信号端子側グラウンド端子と、平衡信号端子側グラウンド端子と、複数のＩＤＴ電極とを含み、
    　前記不平衡信号端子側グラウンド端子と、前記平衡信号端子側グラウンド端子とは、前記圧電基板上で互いに接続されておらず、
    　前記複数のＩＤＴ電極は、
    　前記不平衡信号端子に接続されているくし歯状電極と、前記不平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する不平衡信号端子側ＩＤＴ電極と、
    　前記第１の平衡信号端子に接続されているくし歯状電極と、前記平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する第１の平衡信号端子側ＩＤＴ電極と、
    　前記第２の平衡信号端子に接続されているくし歯状電極と、前記平衡信号端子側グラウンド端子に接続されているくし歯状電極とを有する第２の平衡信号端子側ＩＤＴ電極と、を有し、
    　前記配線基板は、前記不平衡信号端子側グラウンド端子と接続されている不平衡信号端子側グラウンド電極と、前記平衡信号端子側グラウンド端子と接続されている平衡信号端子側グラウンド電極とを有し、
    　前記不平衡信号端子側グラウンド電極と、前記平衡信号端子側グラウンド電極とは、前記配線基板の裏面において共通化されている、弾性波分波器。     An acoustic wave duplexer comprising: a transmission filter constituted by an elastic wave filter; and a reception filter constituted by a balanced type longitudinally coupled resonator type elastic wave filter having a balance-unbalance conversion function,
    A wiring board having a die attach surface and a back surface; and at least one elastic wave filter chip mounted on the die attach surface;
    The acoustic wave filter chip includes a piezoelectric substrate and an electrode that is formed on the piezoelectric substrate and forms the reception filter,
    The electrodes constituting the reception filter include an unbalanced signal terminal, first and second balanced signal terminals, an unbalanced signal terminal side ground terminal, a balanced signal terminal side ground terminal, and a plurality of IDT electrodes. ,
    The unbalanced signal terminal side ground terminal and the balanced signal terminal side ground terminal are not connected to each other on the piezoelectric substrate,
    The plurality of IDT electrodes are:
    An unbalanced signal terminal-side IDT electrode having a comb-like electrode connected to the unbalanced signal terminal and a comb-like electrode connected to the unbalanced signal terminal-side ground terminal;
    A first balanced signal terminal-side IDT electrode having a comb-like electrode connected to the first balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal;
    A second balanced signal terminal-side IDT electrode having a comb-like electrode connected to the second balanced signal terminal and a comb-like electrode connected to the balanced signal terminal-side ground terminal; And
    The wiring board has an unbalanced signal terminal side ground electrode connected to the unbalanced signal terminal side ground terminal, and a balanced signal terminal side ground electrode connected to the balanced signal terminal side ground terminal,
    The unbalanced signal terminal-side ground electrode and the balanced signal terminal-side ground electrode are elastic wave duplexers that are shared on the back surface of the wiring board.
  3. 　前記弾性波フィルタチップは、前記受信フィルタを構成する電極を有する受信側弾性波フィルタチップと、前記送信フィルタを構成する電極を有する送信側弾性波フィルタチップとを含む、請求項１または２に記載の弾性波分波器。 The said elastic wave filter chip | tip contains the receiving side elastic wave filter chip | tip which has the electrode which comprises the said reception filter, and the transmission side elastic wave filter chip | tip which has the electrode which comprises the said transmission filter. Elastic wave demultiplexer.
  4. 　前記送信フィルタは、ラダー型弾性波フィルタにより構成されており、
    　前記送信フィルタを構成する電極は、出力端子と、入力端子と、送信側グラウンド端子と、直列腕共振子及び並列腕共振子を構成している複数の弾性波共振子とを含み、
    　前記並列腕共振子を構成している弾性波共振子は、前記直列腕共振子を構成している弾性波共振子に接続されているくし歯状電極と、前記送信側グラウンド端子に接続されているくし歯状電極とを有するＩＤＴ電極を有し、
    　前記配線基板は、前記送信側グラウンド端子と接続されている送信側グラウンド電極を有し、
    　前記送信側グラウンド電極と、前記平衡信号端子側グラウンド電極とは、前記配線基板で互いに接続されていない、請求項３に記載の弾性波分波器。     The transmission filter is configured by a ladder-type elastic wave filter,
    The electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator,
    The elastic wave resonator constituting the parallel arm resonator is connected to a comb-like electrode connected to the elastic wave resonator constituting the series arm resonator and the transmission side ground terminal. An IDT electrode having a comb-like electrode,
    The wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal,
    The elastic wave duplexer according to claim 3, wherein the transmission-side ground electrode and the balanced signal terminal-side ground electrode are not connected to each other on the wiring board.
  5. 　前記送信フィルタは、ラダー型弾性波フィルタにより構成されており、
    　前記送信フィルタを構成する電極は、出力端子と、入力端子と、送信側グラウンド端子と、直列腕共振子及び並列腕共振子を構成している複数の弾性波共振子とを含み、
    　前記並列腕共振子を構成している弾性波共振子は、前記直列腕共振子を構成している弾性波共振子に接続されているくし歯状電極と、前記送信側グラウンド端子に接続されているくし歯状電極とを有するＩＤＴ電極を有し、
    　前記配線基板は、前記送信側グラウンド端子と接続されている送信側グラウンド電極を有し、
    　前記送信側グラウンド電極と、前記平衡信号端子側グラウンド電極とは、前記配線基板の裏面において共通化されている、請求項３に記載の弾性波分波器。     The transmission filter is configured by a ladder-type elastic wave filter,
    The electrode constituting the transmission filter includes an output terminal, an input terminal, a transmission-side ground terminal, and a plurality of acoustic wave resonators constituting a series arm resonator and a parallel arm resonator,
    The elastic wave resonator constituting the parallel arm resonator is connected to a comb-like electrode connected to the elastic wave resonator constituting the series arm resonator and the transmission side ground terminal. An IDT electrode having a comb-like electrode,
    The wiring board has a transmission-side ground electrode connected to the transmission-side ground terminal,
    The elastic wave duplexer according to claim 3, wherein the transmission-side ground electrode and the balanced signal terminal-side ground electrode are shared on the back surface of the wiring board.
PCT/JP2011/077174 2011-02-24 2011-11-25 Acoustic wave branching filter WO2012114593A1 (en)

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