WO2012132093A1 - Dispositif à ondes acoustiques - Google Patents

Dispositif à ondes acoustiques Download PDF

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Publication number
WO2012132093A1
WO2012132093A1 PCT/JP2011/076253 JP2011076253W WO2012132093A1 WO 2012132093 A1 WO2012132093 A1 WO 2012132093A1 JP 2011076253 W JP2011076253 W JP 2011076253W WO 2012132093 A1 WO2012132093 A1 WO 2012132093A1
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WO
WIPO (PCT)
Prior art keywords
electrode
electrode layer
acoustic wave
piezoelectric substrate
elastic wave
Prior art date
Application number
PCT/JP2011/076253
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English (en)
Japanese (ja)
Inventor
潤平 安田
Original Assignee
株式会社村田製作所
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Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2012132093A1 publication Critical patent/WO2012132093A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0023—Balance-unbalance or balance-balance networks
    • H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
    • H03H9/0085—Balance-unbalance or balance-balance networks using surface acoustic wave devices having four acoustic tracks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
    • H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements

Definitions

  • the present invention relates to an elastic wave device.
  • the present invention relates to an elastic wave filter device and an elastic wave duplexer having a ladder-type elastic wave filter section.
  • a bandpass filter having a ladder type filter unit in which a surface acoustic wave resonator formed on a piezoelectric substrate is connected in a ladder type is known.
  • a plurality of parallel arms are connected on a piezoelectric substrate, and an inductor composed of a wiring pattern of a wire or a package is connected to a connection point of the plurality of parallel arms, thereby passing It is known to improve out-of-band attenuation characteristics.
  • Patent Document 1 discloses that a plurality of parallel arms are not connected on the piezoelectric substrate, and an inductance is connected upstream of a common connection point of each parallel arm, so that the outside of the pass band of the ladder-type surface acoustic wave filter. It is described that the attenuation characteristics of the above are improved.
  • the inductance is configured by a ground pattern formed on a mounting surface of a multilayer substrate on which a piezoelectric substrate constituting a transmission filter and a reception filter is flip-chip mounted. .
  • the present invention has been made in view of such a point, and an object thereof is to provide an elastic wave device that is small in size and excellent in out-of-band attenuation characteristics.
  • the elastic wave device includes an input terminal, an output terminal, a series arm, a plurality of series arm resonators, a plurality of parallel arms, a parallel arm resonator, and an inductor.
  • the serial arm connects the input terminal and the output terminal.
  • the plurality of series arm resonators are connected in series in the series arm.
  • Each of the plurality of parallel arms is connected between the series arm and the ground potential.
  • the parallel arm resonator is provided in each of the plurality of parallel arms.
  • the inductor is connected between a common connection point of at least two of the plurality of parallel arms and a ground potential.
  • the acoustic wave device includes an acoustic wave chip, a wiring board, a first electrode layer, at least one second electrode layer, a third electrode layer, and a connection electrode.
  • the acoustic wave chip has a rectangular piezoelectric substrate and a plurality of IDT electrodes.
  • the plurality of IDT electrodes are arranged on the piezoelectric substrate.
  • the plurality of IDT electrodes constitute a plurality of series arm resonators and a plurality of parallel arm resonators.
  • the wiring board has a first main surface and a second main surface.
  • An elastic wave chip is flip-chip mounted on the first main surface.
  • the first electrode layer is disposed on the first main surface. At least one second electrode layer is disposed in the wiring board.
  • the third electrode layer is disposed on the second main surface.
  • the connection electrode connects the first electrode layer and the third electrode layer via the second electrode layer.
  • the acoustic wave chip has at least two ground terminals. At least two ground terminals are arranged on the piezoelectric substrate. At least two ground terminals are connected to a common connection point. The at least two ground terminals are arranged so as to be adjacent along one side of the piezoelectric substrate. A common connection point is provided in the first electrode layer.
  • the inductor is composed of at least one second electrode layer and a connection electrode.
  • an elastic wave apparatus is an elastic wave splitter provided with the transmission side filter part comprised by the ladder-type elastic wave filter part, and the receiving side filter part. .
  • each of the series arm resonator and the parallel arm resonator is constituted by a surface acoustic wave resonator.
  • an elastic wave device having excellent out-of-band attenuation characteristics can be provided.
  • FIG. 1 is a schematic equivalent circuit diagram of an acoustic wave duplexer according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of an acoustic wave duplexer according to an embodiment of the present invention.
  • FIG. 3 is a schematic perspective plan view of a reception-side acoustic wave filter chip according to an embodiment of the present invention.
  • FIG. 4 is a schematic perspective plan view of a transmission-side elastic wave filter chip according to an embodiment of the present invention.
  • FIG. 5 is a schematic plan view of the first main surface of the wiring board according to the embodiment of the present invention.
  • FIG. 6 is a schematic perspective plan view of the second electrode layer in one embodiment of the present invention.
  • FIG. 7 is a schematic perspective plan view of the second main surface of the wiring board according to the embodiment of the present invention.
  • FIG. 8 is a schematic equivalent circuit diagram of an acoustic wave duplexer according to a comparative example.
  • FIG. 9 is a schematic plan view of the first main surface of the wiring board in the comparative example.
  • FIG. 10 is a schematic perspective plan view of the second electrode layer in the comparative example.
  • FIG. 11 is a schematic perspective plan view of the second main surface of the wiring board in the comparative example.
  • FIG. 12 is a graph showing pass characteristics in the transmission filter section of the surface acoustic wave duplexer according to the embodiment.
  • FIG. 13 is a graph showing pass characteristics in the transmission filter section of the surface acoustic wave duplexer according to the comparative example.
  • FIG. 1 is a schematic equivalent circuit diagram of an acoustic wave duplexer according to this embodiment.
  • a surface acoustic wave duplexer 1 shown in FIG. 1 is a surface acoustic wave duplexer for UMTS-BAND5 (passband transmission: 824 MHz to 849 MHz, reception: 869 MHz to 894 MHz).
  • the acoustic wave duplexer 1 includes an antenna terminal 11 connected to an antenna, a transmission-side signal terminal 12, and first and second reception-side signal terminals 13a and 13b.
  • the transmission side filter unit 2 is connected between the antenna terminal 11 and the transmission side signal terminal 12.
  • the receiving side filter unit 3 is connected between the antenna terminal 11 and the first and second receiving side signal terminals 13a and 13b.
  • An impedance matching inductor L3 is connected between a connection point between the transmission-side filter unit 2 and the reception-side filter unit 3, a connection point between the antenna terminal 11, and the ground potential.
  • the reception-side filter unit 3 includes an antenna-side terminal 3a connected to the antenna terminal 11 and first and second balanced terminals connected to the first or second reception-side signal terminals 13a and 13b. 1 and second receiving side terminals 3b and 3c. Between the antenna side terminal 3a and the first and second reception side terminals 3b and 3c, a balanced type longitudinally coupled resonator type surface acoustic wave filter unit 3d having a balance-unbalance conversion function is connected. Yes. Surface acoustic wave resonators 3e and 3f are connected between the longitudinally coupled resonator type surface acoustic wave filter 3d and the antenna side terminal 3a.
  • the transmission filter unit 2 is composed of a ladder type surface acoustic wave filter unit.
  • the transmission side filter unit 2 includes an antenna side terminal 2a connected to the antenna terminal 11, a transmission side terminal 2b connected to the transmission side signal terminal 12, and first to third terminals connected to the ground potential. And ground terminals 2c to 2e.
  • the two ground terminals 2d and 2e connected to the common connection point 23 are disposed adjacent to each other along one side 41A of the piezoelectric substrate 41 as shown in FIG.
  • the antenna side terminal 2 a and the transmission side terminal 2 b are connected by a series arm 21.
  • the series arm 21 is provided with a plurality of series arm resonators S1 to S4.
  • the plurality of series arm resonators S 1 to S 4 are connected in series at the series arm 21.
  • the series arm resonator S2 includes a resonator S2-1 and a resonator S2-2 that function as one resonator. That is, the series arm resonator S2 is divided into a resonator S2-1 and a resonator S2-2.
  • the series arm resonator S3 includes a resonator S3-1 and a resonator S3-2 that function as one resonator.
  • the series arm resonator S3 is divided into a resonator S3-1 and a resonator S3-2.
  • Each of the resonators S1, S2-1, S2-2, S3-1, S3-2, and S4 includes an IDT electrode including a pair of comb-like electrodes that are interleaved with each other, and an IDT electrode of the IDT electrode. And reflectors arranged on both sides in the elastic wave propagation direction.
  • the serial arm 21 and the ground potential are connected by a plurality of parallel arms 22a to 22c.
  • the parallel arm 22a connects the connection point between the series arm resonator S1 and the series arm resonator S2 and the ground potential.
  • the parallel arm 22a is provided with a parallel arm resonator P1.
  • An inductor L1 is connected between the parallel arm 22a and the ground potential.
  • the parallel arm 22b connects the connection point between the second series arm resonator S2 and the third series arm resonator S3 and the ground potential.
  • the parallel arm 22b is provided with a parallel arm resonator P2.
  • the parallel arm 22c connects the connection point between the third series arm resonator S3 and the fourth series arm resonator S4 and the ground potential.
  • the parallel arm 22c is provided with a parallel arm resonator P3.
  • the parallel arm 22b and the parallel arm 22c are connected to the common connection point 23 in common.
  • An inductor L2 is connected between the common connection point 23 and the ground potential.
  • Each of the parallel arm resonators P1 to P3 includes an IDT electrode composed of a pair of comb-like electrodes that are interleaved with each other, and reflectors disposed on both sides of the IDT electrode in the elastic wave propagation direction. Has been.
  • FIG. 2 is a schematic cross-sectional view of the elastic wave duplexer according to the present embodiment.
  • FIG. 3 is a schematic perspective plan view of the reception-side acoustic wave filter chip in the present embodiment.
  • FIG. 4 is a schematic perspective plan view of the transmission-side acoustic wave filter chip in the present embodiment.
  • FIG. 5 is a schematic plan view of the first main surface of the wiring board in the present embodiment.
  • FIG. 6 is a schematic perspective plan view of the second electrode layer in the present embodiment.
  • FIG. 7 is a schematic perspective plan view of the second main surface of the wiring board in the present embodiment.
  • the acoustic wave duplexer 1 includes a wiring board 30, a transmission chip 40 and a reception chip 50 as acoustic wave chips.
  • the transmission chip 40 and the reception chip 50 are flip-chip mounted on the first main surface (mounting surface) 30a of the wiring board 30 via bumps 15 made of gold, solder, or the like.
  • the transmission chip 40 and the reception chip 50 are sealed with a resin sealing material 38 provided on the first main surface 30a.
  • the transmission chip 40 shown in FIG. 3 is a surface acoustic wave filter chip.
  • the transmission chip 40 includes a rectangular piezoelectric substrate 41.
  • a plurality of IDT electrodes 42 constituting a plurality of series arm resonators S1 to S4 and a plurality of parallel arm resonators P1 to P3 are provided.
  • an antenna side terminal 2a, a transmission side terminal 2b, and first to third ground terminals 2c to 2e are provided.
  • the receiving chip 50 shown in FIG. 4 is a surface acoustic wave filter chip.
  • the receiving chip 50 has a rectangular piezoelectric substrate 51.
  • On the main surface 51 a of the piezoelectric substrate 51 a plurality of IDT electrodes 52 constituting the reception-side filter unit 3 are provided.
  • On the main surface 51a of the piezoelectric substrate 51 an antenna side terminal 3a and first and second reception side terminals 3b and 3c are provided.
  • a protective film made of silicon oxide, silicon nitride, or the like may be provided on the principal surfaces 41a, 51a of the piezoelectric substrates 41, 51 so as to cover the IDT electrodes 42, 52.
  • each of the piezoelectric substrates 41 and 51 is made of lithium tantalate (LiTaO 3 )
  • the piezoelectric substrates 41 and 51 may be made of other materials such as lithium niobate (LiNbO 3 ) and crystal. It may be made of a piezoelectric material.
  • the electrodes such as the IDT electrodes 42 and 52 formed on the principal surfaces 41a and 51a of the piezoelectric substrates 41 and 51 are made of an Al—Cu alloy. , Cu, Ti, Pt, Au, Ag, Ni, Cr, Pd, or a conductive material such as an alloy containing one or more of these metals.
  • the electrode may be formed of a conductive film stack in which a plurality of conductive films made of the conductive material are stacked.
  • the wiring board 30 includes first and second dielectric layers 31 and 32 and first to third electrode layers 33 to 35.
  • each of the dielectric layers 31 and 32 is made of alumina, but the dielectric layers 31 and 32 may be made of a ceramic material other than alumina or a resin, for example. Further, the wiring board 30 may include three or more dielectric layers.
  • the first and second dielectric layers 31 and 32 are laminated, and the first main surface 30a of the wiring board 30 is constituted by one main surface of the first dielectric layer 31.
  • the second main surface 30b of the wiring substrate 30 is constituted by one main surface of the second dielectric layer 32.
  • the first electrode layer 33 is disposed on the first major surface 30a.
  • the second electrode layer 34 is disposed between the first dielectric layer 31 and the second dielectric layer 32. That is, the second electrode layer 34 is disposed in the wiring substrate 30.
  • the third electrode layer 35 is disposed on the second major surface 30b.
  • the first electrode layer 33 and the second electrode layer 34 are connected by a plurality of first via hole electrodes 36 shown in FIG.
  • the second electrode layer 34 and the third electrode layer 35 are connected by a plurality of second via hole electrodes 37 shown in FIG.
  • the first electrode layer 33 includes an antenna electrode 33a, first and second reception electrodes 33b and 33c, a transmission electrode 33d, a ground electrode 33e, a ground electrode 33f, and a ground electrode.
  • 33 g The antenna electrode 33a is connected to the antenna side terminals 2a and 3a.
  • the first receiving terminal 3b is connected to the first receiving electrode 33b.
  • the second reception electrode 33c is connected to the second reception side terminal 3c.
  • the transmission electrode 33d is connected to the transmission side terminal 2b.
  • the ground electrode 33e is connected to the ground terminal 2c.
  • the ground electrode 33f is connected to the ground terminals 2d and 2e.
  • the ground electrode 33f constitutes the common connection point 23 shown in FIG. That is, the common connection point 23 constituted by the ground electrode 33f is provided in the first electrode layer 33 disposed on the first main surface 30a.
  • the ground electrode 33 g is connected to the reception filter unit 3.
  • the antenna electrode 33a is connected to the electrode 34a of the second electrode layer 34 through the first via hole electrode 36a.
  • the electrode layer 34 is connected to the antenna terminal 11 of the third electrode layer 35 through the second via hole electrode 37a.
  • the first receiving electrode 33b is connected to the electrode 34b of the second electrode layer 34 through the first via hole electrode 36b.
  • the electrode 34b is connected to the first reception-side signal terminal 13a of the third electrode layer 35 through the second via-hole electrode 37b.
  • the second receiving electrode 33c is connected to the electrode 34c of the second electrode layer 34 through the first via hole electrode 36c.
  • the electrode 34c is connected to the second reception-side signal terminal 13b of the third electrode layer 35 through the second via-hole electrode 37c.
  • the transmission electrode 33d is connected to the electrode 34d of the second electrode layer 34 via the first via-hole electrode 36d.
  • the electrode 34d is connected to the transmission-side signal terminal 12 of the third electrode layer 35 through the second via hole electrode 37d.
  • the ground electrode 33e is connected to the electrode 34e of the second electrode layer 34 through the first via hole electrode 36e.
  • the electrode 34e is connected to the ground terminal 16 of the third electrode layer 35 through the second via hole electrode 37e.
  • the ground terminal 16 is connected to a ground potential.
  • the first via hole electrode 36e, the electrode 34e of the second electrode layer 34, and the second via hole electrode 37e constitute an inductor L1.
  • the ground electrode 33f is connected to the electrode 34f of the second electrode layer 34 through the first via hole electrode 36f.
  • the electrode 34f is connected to the ground terminal 17 of the third electrode layer 35 via a plurality of second via hole electrodes 37f.
  • the ground terminal 17 is connected to the ground potential.
  • the inductor L2 is configured by the first via hole electrode 36f, the electrode 34f of the second electrode layer 34, and the second via hole electrode 37f.
  • the wiring board 30 includes three or more dielectric layers, a plurality of second electrode layers 34 may be disposed in the wiring board 30. The plurality of second electrode layers are connected to each other through via hole electrodes.
  • the ground electrode 33g is connected to the electrode 34g of the second electrode layer 34 through the plurality of first via hole electrodes 36g.
  • the electrode 34g is connected to the ground terminals 17 to 19 of the third electrode layer 35 via a plurality of second via hole electrodes 37g.
  • the ground terminals 17 to 19 are connected to the ground potential.
  • the wiring pattern which comprises an inductor when the wiring pattern which comprises an inductor is formed in the mounting surface of a wiring board, the area of the part which the electrode on a piezoelectric substrate and the electrode on the mounting surface of a wiring board oppose increases.
  • the wiring pattern is lengthened in order to increase the inductance value of the inductor, the area of the portion where the electrode on the piezoelectric substrate and the electrode on the mounting surface of the wiring substrate face each other is increased. For this reason, the capacitive coupling which arises between the electrode on a piezoelectric substrate and the electrode on the mounting surface of a wiring board becomes large. As a result, the attenuation characteristics outside the pass band are deteriorated.
  • the inductor L2 includes at least one second electrode layer 34 and first and second via hole electrodes 36f and 37f, and the first electrode layer 33 and the third electrode layer.
  • the inductor L ⁇ b> 2 is configured by the connection electrode 39 that connects to 35.
  • the inductor L ⁇ b> 2 is configured by a second electrode layer 34 provided inside the wiring substrate 30.
  • the two ground terminals 2 d and 2 e connected to the ground electrode 33 f constituting the common connection point 23 are arranged so as to be adjacent to each other along one side 41 ⁇ / b> A of the piezoelectric substrate 41.
  • the ground electrode 33f constituting the common connection point 23 even when the ground electrode 33f constituting the common connection point 23 is provided, the area of the portion where the ground electrode 33f and the electrode formed on the piezoelectric substrate 41 face each other can be reduced. . Therefore, it is possible to suppress the formation of capacitive coupling between the ground electrode 33f and the electrode formed on the piezoelectric substrate 41. Therefore, excellent out-of-passband attenuation characteristics can be realized.
  • connection electrode 39 may include a via hole electrode that connects the plurality of second electrode layers 34 together with the first and second via hole electrodes 36f and 37f.
  • an acoustic wave duplexer having the same configuration as the acoustic wave duplexer 1 according to the above embodiment was prepared.
  • the inductor L2-1 is connected between the parallel arm 22b and the common connection point 23, and the parallel arm 22c and the common connection point 23 are connected.
  • An inductor L2-2 is connected between them, and an inductor L2-3 is connected between the common connection point 23 and the ground potential, which is different from the acoustic wave duplexer according to the embodiment.
  • the inductor L2-1 and the inductor L2-2 are constituted by a first electrode layer 33 formed on the first main surface 30a.
  • the inductor L2-3 is configured by the second electrode layer 34 as in the embodiment.
  • the inductor L2-3 has a smaller inductance value than the inductor L2. Specifically, the inductance value of the inductor L2 in the example was 0.6 nH. The inductance value of the inductor L2-3 was 0.4 nH. The inductance values of the inductors L2-1 and L2-2 are 0.5 nH.
  • FIG. 12 shows the pass characteristics of the transmission filter of the example.
  • FIG. 13 shows the pass characteristics of the transmission filter of the comparative example.
  • the graphs shown as “ideal characteristics” in FIGS. 12 and 13 are graphs representing the pass characteristics obtained by the simulation without considering the capacitive coupling or the like.
  • the difference between the ideal characteristic and the actually measured characteristic is 0.4 dB in the second harmonic attenuation band (1648 MHz to 1698 MHz) and 0.8 dB in the third harmonic attenuation band (2472 MHz to 2547 MHz). Met.
  • the difference between the ideal characteristic and the measured characteristic was 2.8 dB in the second harmonic attenuation band and 4.3 dB in the third harmonic attenuation band.
  • surface acoustic wave resonators are used for the series arm resonator and the parallel arm resonator, but other elastic wave resonators such as boundary acoustic wave resonators and bulk acoustic wave resonators may be used. . Moreover, although the said embodiment demonstrated using the splitter, this invention is applicable also to other elastic wave apparatuses, such as an interstage filter of RF circuit.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un dispositif à ondes acoustiques ayant des caractéristiques d'atténuation hors-bande supérieures. La puce à ondes acoustiques (40) comprend au moins deux bornes de masse (2d, 2e). Lesdites deux bornes de masse (2d, 2e) sont disposées sur un substrat piézoélectrique (41). Lesdites deux bornes de masse (2d, 2e) sont connectées à un point de connexion commun (23). Lesdites deux bornes de masse (2d, 2e) sont disposées de manière adjacente l'une à l'autre le long d'un bord (41A) du substrat piézoélectrique (41). Le point de connexion commun (23) est disposé sur une première couche d'électrode (33). L'inductance (L2) est configurée de manière à comporter au moins une seconde couche d'électrode (34) et une électrode de connexion (39).
PCT/JP2011/076253 2011-03-31 2011-11-15 Dispositif à ondes acoustiques WO2012132093A1 (fr)

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JP2011078145 2011-03-31
JP2011-078145 2011-03-31

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WO2012132093A1 true WO2012132093A1 (fr) 2012-10-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109314504A (zh) * 2016-06-24 2019-02-05 株式会社村田制作所 弹性波滤波器装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141771A (ja) * 2000-08-21 2002-05-17 Murata Mfg Co Ltd 弾性表面波フィルタ装置
WO2007088683A1 (fr) * 2006-02-02 2007-08-09 Murata Manufacturing Co., Ltd. Dispositif de filtre

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141771A (ja) * 2000-08-21 2002-05-17 Murata Mfg Co Ltd 弾性表面波フィルタ装置
WO2007088683A1 (fr) * 2006-02-02 2007-08-09 Murata Manufacturing Co., Ltd. Dispositif de filtre

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109314504A (zh) * 2016-06-24 2019-02-05 株式会社村田制作所 弹性波滤波器装置
CN109314504B (zh) * 2016-06-24 2022-07-29 株式会社村田制作所 弹性波滤波器装置

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