WO2012112821A1 - Films à mobilité électronique accrue absorbant les rayonnements solaires et leurs procédés de préparation - Google Patents

Films à mobilité électronique accrue absorbant les rayonnements solaires et leurs procédés de préparation Download PDF

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WO2012112821A1
WO2012112821A1 PCT/US2012/025529 US2012025529W WO2012112821A1 WO 2012112821 A1 WO2012112821 A1 WO 2012112821A1 US 2012025529 W US2012025529 W US 2012025529W WO 2012112821 A1 WO2012112821 A1 WO 2012112821A1
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nano
film
ink
sintering
nps
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Henry L. Lomasney
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Sandia Solar Technologies Llc
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    • C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
    • C07F19/005—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00 without metal-C linkages
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02524—Group 14 semiconducting materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • CIS absorbers Although a variety of approaches have been taken to the deposition of CIS absorbers, they may be divided into two categories: physical vapor deposition and reactive annealing.
  • physical vapor deposition processes Cu - In complexes are vapor deposited from ternary (e.g., CuInSe2) or quaternary (e.g., Culni_ x Ga x Se 2 ) sources onto a heated substrate.
  • Deposition is generally followed by reactive annealing with sulfur or selenium.
  • reactive annealing techniques involve the deposition Cu and In layers, typically by sputtering, at the appropriate thickness on to a substrate that is generally at room temperature (e.g., a 20-25° C substrate).
  • Deposition is typically followed by a second step, where the multi-layer structure is annealed in the presence of selenium (i.e., reactive annealing). Energy conversion efficiency is not as high as with the physical vapor deposition processes, but the process is easier to manage.
  • RTP Rapid Thermal Processing
  • a production process that uses bulk CIGS is especially challenging since CIGS has a melting point around 1000° C. Most substrates cannot withstand such temperatures, and even glass substrates encounter serious warping problems. Furthermore, traditional production methods/alternatives involve high energy demands, require relatively long processing times, and they involve large capital outlays for production facilities.
  • U.S. Patent No.: 6,092, 669 the thin film precursor is provided in the form of metal layers that are subsequently exposed to reactive annealing with selenium.
  • This process has the drawbacks of high cost, required use of reactive annealing with selenium, and non-uniformity of product.
  • U.S. Patent No. 4,581,108 discloses an electrodeposition process to deliver the necessary metal precursor layers followed by the selenization of those layers. That process, however, has been shown to yield a CuInSe 2 absorber film that has poor adhesion to the back contact (ohmic) layer.
  • U.S. Patent No.: 7,582,506 to Basel discloses a process for
  • U.S. Patent Application No. 20090053878 discloses a method for producing a group IV semiconductor solar cell utilizing a colloidal silicon nanoparticle dispersion to lay down a silicon absorber precursor layer, and a flash lamp to sinter the precursor layer. While this process discloses the sintering of the silicon grain structure of the absorber layer, using a high intensity photonic energy source with the objective of a desired grain uniformity and densification of the absorber layer, it does not anticipate the
  • CIGS tetragonal chalcopyrite
  • the silicon sintering process disclosed therein provides gas phase dopants that are not compatible with CIGS formation processes employing colloidal nanoparticle dispersions of metal alloys having differing melting points and differing diffusion and reaction kinetics.
  • the design of the sintering regimen requires a focused engineering approach to the photonic energy regime, in order to achieve the uniform and complete formation of the tetragonal chalcopyrite, without any unreacted domains, and without damaging the structure of the absorber layer.
  • U.S. Patent Application 20070218657 discloses an approach to silicon semiconductor formation using colloidal nanoparticle technology, wherein irradiation by a laser is employed to fuse the nanoparticles.
  • the laser functions to provide a grain-size gradient through the cross section of the crystalline semiconductor layer.
  • the laser irradiation involved in that process also results in the evaporation of certain volatile species.
  • This disclosure provides a means for enabling a positive effect on the functional properties of semi-conducting crystalline structures that are provided by optimization of nano- ink compositions.
  • the use of nano-inks composed of colloidal nano-crystals prepared using the methodology described herein results in a highly conductive and functionally optimized solar absorber medium.
  • These colloidal nanocrystals are designed such that when combined by solvent release and heat treatment and/or sintering, a larger assembled matrices, whose properties are positively affected by their electron pathway interactions, result.
  • Organic ligands that are routinely used in synthesis of nanoparticles result in unacceptable inter-particle coupling, and/or a residue of electron trapping organic carbon residues and as a result the electron mobility is compromised.
  • the first is the use of a graphene matrix into which the nanoparticles are embedded in a manner that assures electron mobility
  • the second is the use of inorganic ligands of that is comprised of a molecular metal chalcogenide, which also favorably affects electron mobility.
  • these two mechanisms can optionally be used in a synergistic manner.
  • this disclosure addresses methods to positively affect the quantum efficiency of solar cells by optimizing the incident photon-to-electron conversion efficiency. Furthermore, the solar energy conversion efficiency of solar absorbing films is positively addressed by means of an engineered spray pyrolysis process for the application of the nano-ink.
  • This disclosure also sets forth a mechanism to improve the solar energy conversion efficiency and the economics of solar absorber production by means of an engineered photonic flash sintering process.
  • the engineered spray pyrolysis and engineered photonic flash sintering processes can be optionally used together or separately to improve the energy conversion efficiency of thin film solar absorber systems. Production processes that optionally incorporate any or all of these disclosed processes are disclosed. The process steps are arranged in sequences that generally are applicable to the production process. The use of each of these methods as a step in the production of solar absorbers is optional. Any one, or any multiple (including the use of all) of the techniques described herein may be employed for the enhancement of solar film production.
  • Figure 1 is Figure 1 from U.S. Patent No. 7,718,707 B2, which "shows a simplified diagram comparing surface area/volume to diameter for a set of Si nanoparticles.”
  • Light or Solar Absorber Layer All solar cells require a light absorbing material contained within the cell structure to absorb photons and generate electrons via the photovoltaic effect. Light penetrates such a composite material reaching the lower charged layer. There the energy causes atoms to release electrons, which drift to the upper layer, giving this region a net negative charge and the lower layer a net positive charge.
  • Nano-crystalline solar cells as used herein refer to thin-film light absorbing materials that are laid onto a supporting matrix of metal foil, polymer, ceramic or glass. These materials have a high surface area which can serve to increase internal reflections (thereby increasing the probability of light absorption).
  • the use of nanocrystals in such applications permits the design of architectures on the nanometer length scale, which is also the typical excitation diffusion length.
  • single-nanocrystal ('channel') devices can provide an array of single p-n junctions between the electrodes which are separated by a period of about a diffusion length. This enables solar cells having potentially high efficiency.
  • Chalcopyrite is a copper iron sulfide mineral that crystallizes in the tetragonal crystal structure.
  • the associated solar composition provides P- type absorber.
  • Rapid Thermal Annealing As used herein, refers to the heating of a semiconductor wafer over a relatively abbreviated time interval, in order to affect the electrical properties. This heating can activate, move or drive dopants from one region to another. It can change the film-to-film or film-to-surface interface. It can be used to densify a deposited film. In achieving these relatively abbreviated short term annealing objectives, a tradeoff is made in process uniformity, temperature distribution management and stress in the wafer. Unlike furnace annealing, RTP normally lasts only minutes in duration (e.g., several minutes, or about 2-4, 3-7, 4-10, 10-20, or 15-30 minutes). When compared to the engineered photonic energy pulse process, the RTP is many orders of magnitude longer in its exposure duration.
  • Photonic Energy the quantum of electromagnetic interaction that is contained in a photon, which is the basic unit of light. The energy and momentum of a photon depend only on its frequency (wavelength). The photon has no rest mass which allows for interaction at long distances.
  • CIGS Copper- indium-gallium-diselenide is a I-III-VI 2 compound tetrahedrally bonded semiconductor material. It is a solid solution of copper indium selenide (CIS) and gallium selenide.
  • CZTS - Copper-zinc-tin-selenide is a I-II-VI quaternary compound whose
  • thermodynamic stability region is small. It has an intrinsic p-type conductivity that can be attributed to the presence of CuZn antisites.
  • grain boundaries represent the region or juncture between adjacent grains.
  • the presence of foreign residues in grain boundary regions of the semiconducting media used in solar absorber applications are of importance relative to device performance.
  • grain size refers to the average grain size. In the context of chalcopyrite thin films, grain size is one of the parameters that will directly influence the solar cell efficiency. The traditional convention has maintained that a large average grain size provides higher overall solar efficiency. This is explained by the optimization of solar absorption combined with minimization of the grain boundaries. Grain size in CIGS absorbers generally has ranged from 0.2 microns to 1.7 microns (with the median grain size being in the range of 0.8 microns.
  • Pre-Sintering - As used herein, connotes a partial sintering phenomenon wherein the thermal regime that is imposed is not sufficient to grow the NP into the grain size that is ultimately desired, but where the growth of the nanoparticle is adequate to move the particle out of the catastrophic contamination domain.
  • catastrophic contamination domain refers to a core-shell nanoparticle architecture. It characterizes the region where the nanoparticle is a size range where the volume amount of organic capping ligand(s) (i.e., the shell) needed to provide the requisite colloidal stability becomes excessive in comparison to the volume of the nanoparticle core. The phenomenon is further explained in U.S. Patent No. 7,718,707 issued to Kellman, for example in Figure 1.
  • Pyrolysis - As used herein, is the decomposition or transformation of a compound that is brought about by the action of heat.
  • Ultrasonic Spray Pyrolysis - indicates a pyrolysis process wherein the use of a spray type deposition of a compound is involved.
  • Ultrasonic Spray Pyrolysis - indicates a spray pyrolysis process wherein ultrasonic energy enhances the atomization of the sprayed medium in a pyrolysis process.
  • Pre-Sintering - As used herein, connotes a partial sintering phenomenon wherein the thermal regime imposed is not sufficient to grow the NP into the grain size that is ultimately desired, but where the growth of the nanoparticle is adequate to move the particle out of the catastrophic contamination domain.
  • Microwave Enhanced Ligand Exchange is a nanoparticle ligand exchange that utilizes microwave energy to drive an exchange of a ligand associated with a nanoparticle with another ligand that the nanoparticle is in contact with.
  • Metallic Chalcopyrite Molecule - As used herein is the electron transmitting linking mechanism used to connect the semiconducting nanoparticles into a functional matrix.
  • chalcogenide complexes permit the preparation of conductive and even highly conductive arrays of nanocrystals as well as the mechanism to couple a functional nanoparticle array onto a graphene platelet.
  • MCCL Metallic Chalcogenide Capping Ligand
  • the metallic chalcogenide capping ligand can be affixed to the nanoparticles as they are in the nano-ink form.
  • Such a composition can be subsequently deposited onto a suitable substrate and exposed to subsequent thermal treatment, wherein the nanoparticles become bound into an adherent and robust functional film.
  • the pendant MCCL provides the attachment or linking mechanism.
  • NPs Inorganic Colloidal Nanocrystalline Nanoparticles
  • the core is the metallic alloy (e.g., CIS, CIGS, CZTS, and CdTe) that provides a semiconductor functionality, which in this case is the conversion of photons from the solar spectrum into electrons.
  • the shell is the medium which imparts the solubility or stability of dispersions in a liquid medium, and can be comprised of an organic ligand associated with the core, or a molecular metal chalcogenide complex associated with or liganded to the core (also denoted as a MCCL).
  • phase transfer solvents act as a chelate ligand of NPs and stabilize colloidal dispersions of the particles, the phase transfer solvent can also function as part of the shell.
  • Nanocrystal(s) (NC or NCs in the plural) - As used herein, refers to a crystalline particle with at least one dimension measuring less than 1000 nanometers. This can be suspended in an aqueous or organic solvent to yield an ink solution that can be applied to a surface, making it possible to literally paint a solar panel onto a substrate.
  • Graphene Nanoplatelets includes single atom quasi-planar graphene sheets with sp2 bound carbon atoms arranged in a lattice array.
  • the nano-platelet graphene is of nano dimension.
  • the graphene nano-platelet can consist of stacks of these single atom sheets. Functionality can be provided into these platelets by the introduction of oxygen into a fraction of the sp2 grapheme carbons to produce oxygenated carbons having an sp3 configuration and can be employed as covalent bonding site.
  • the sp2 grapheme carbons can be employed as covalent bonding site.
  • Graphene platelets are highly conductive and highly transparent to the solar light spectrum.
  • Nanoplatelets comprised of single layer carbon lattices that are non-conductive, or have significantly reduced conductivity relative to graphene nanoplatelets. These platelets are often the precursor to a graphene.
  • Graphene Host Conductor Medium indicates a graphene- filled or graphene-containing absorber layer as it is deposited and thermally processed such that its electron transport capability is enabled.
  • This medium which is often referred to as a "matrix” or “continuum,” provides a mechanism for optimizing the minority carrier diffusion length of a solar absorbing film.
  • IPCE Incident Photon-To-Electron Conversion Efficiency
  • nano-inks composed of colloidal nano- particle compositions results in a highly conductive and functionally enhanced/optimized solar absorber medium that when combined by solvent release, heat treatment, and/or sintering, results in larger assembled matrices whose properties are positively affected by their electron pathway interactions.
  • Two mechanisms are disclosed herein for improving the production and properties of thin film solar cells for electrical energy production, the use of a graphene matrix into which the nanoparticles are embedded and the use of nanoparticles with a molecular metal chalcogenide ligand, both of which favorably affect electron mobility and can be used separately or together in a synergistic manner.
  • a spray pyrolysis process for the effective application of nano-inks to form solar absorbers, including the nano-inks comprised of colloidal suspension of nanocrystals, is described herein. Sintering of the applied solar absorber to improve the solar energy conversion efficiency and the economics of solar absorber production by means of an engineered photonic flash process is also described.
  • the engineered spray pyrolysis and engineered photonic flash sintering processes can be used optionally together or separately, to improve the energy conversion efficiency of a thin film solar absorber system.
  • a step-by-step production process that optionally incorporates those processes is disclosed. These steps are arranged in the sequence that is generally applicable to the production process. The use of each of these methods as a step in the production of solar absorbers is optional. Any one, or any multiple (including the use of all) of the techniques described herein may be employed for the enhancement of solar film production.
  • the following describes two alternative means for achieving the electron mobility enhancement of a semiconducting medium for such applications as a solar cell.
  • One addresses the chalcopyrite nanoparticle array which is applied as a precursor medium and subsequently thermally processed to deliver the optimized medium.
  • the second incorporates graphene nano-platelets and the chalcopyrite nanoparticles.
  • h Plank's constant
  • m+ is the carrier effective mass
  • ft Plank's constant over 2 ⁇ (2 Pi)
  • ⁇ and ⁇ are the height of the tunneling barrier and the shortest edge-to-edge distance between the NCs, respectively.
  • formation conductive matrices with embedded nanoparticles/nanocrystals can facilitate the formation of solar absorbers/solar panels by permitting electrical communication between the nanoparticles/ nanocrystals in the matrix.
  • Such conductive matrices also facilitate the collection and delivery of electrical current generated by this solar absorber in a manner that improves the efficiency and capacity of such a device for converting light into electrical energy.
  • Inorganic colloidal preparations of nanocrystalline particles with precisely controlled compositions and morphologies may be employed for the preparation of thin film solar cells.
  • Such NPs provide useful physical and chemical properties and have found applications not only in solar cells but also in other devices.
  • An advanced NP synthesis that draws upon solution-processed colloidal building blocks is disclosed that addresses the challenge of devising a fabrication technique which results in a viable solid state solar absorber medium. This synthesis process produces a core/shell NP particle, where each individual NP has size- dependent properties of the respective absorber metal alloy or semiconductor entity.
  • a processing mechanism comprising the deposition of colloidal nano-inks that comprise nanoparticles associated with an organic capping ligand followed by solvent evolution, and thermal processing.
  • the objective of that process being the preparation of a solar absorber having a solar energy conversion efficiency within the absorber media's internal quantum efficiency limitation.
  • a second process similar to the first, with the exception that the capping ligand is a metal chalcogenide complex that serves to bond an array of nanoparticles into close proximity and permits functional interaction.
  • a third mechanism is provided by processes that incorporates NPs that have been associated with a graphene nanoplatelet, where the graphene nanoplatelet serves to contribute to an optimal transport pathway for the photon generated electrons
  • Colloidal nanomaterials that are applicable to the first above-mentioned application may be prepared by syntheses that involve the use surface ligands to stabilize the particles.
  • NPs having ligands with long (e.g., about C8 to about C18) hydrocarbon or fluorinated hydrocarbon chains or bulky organometallic molecules may be employed. These large molecules create highly insulating barriers around each NC core. After the deposition of such colloidal nanomaterials, the complete removal of undesirable stabilizing surface ligands (e.g., from the shell) is necessary, and this has proven to be problematic and expensive.
  • Those alternatives provide a colloidal nanostructure by the use of surface ligands that (i) adhere, covalently or non- covalently on the NP surface forming a shell and consequently provide colloidal stabilization, (ii) permit a functional electron communication matrix within a NP network, and (iii) supplement the functional performance of individual NPs either by permitting and/or promoting inter-particle behavior, or by their displacement, permitting NP interaction with a conductive host matrix such as graphene.
  • NP shell components e.g., hydrocarbon or organometallic ligands
  • ligand sites on a nanoplatelet e.g., a graphene nanoplatelet
  • NPs including those with a CIGS, CIS, CdTe, or CZTS core
  • a shell comprising a molecular metal chalcogenide complex e.g., Sn 2 S6 4"
  • both of these processes can be coupled.
  • the resulting complexes provide the requisite ligand stabilization of various nanostructures while enabling strong electronic coupling within the NP solids or within the graphene containing medium as disclosed below.
  • graphene matrices with embedded NP and/or NCs are prepared by the exchange of the organic and/or organometallic ligands on the surface of NPs with ligand sites on a graphene nanoplatelet or a graphene oxide nanoplatelet. This can be accomplished by contacting the graphene with NPs under conditions that permit ligand sites on a graphene and/or graphene oxide matrix to displace ligands present on the surface of the NP.
  • matrices with embedded nanoparticles/nanocrystals are prepared by interacting NPs having hydrocarbon ligands with one or more molecular metal chalcogenide complexes (e.g., Sn 2 S 6 4" ) followed by subsequent processing.
  • molecular metal chalcogenide complexes e.g., Sn 2 S 6 4"
  • nanoparticles, NPs with a chalcogenide ligand shell are formed (e.g., CIGS, CIS, CZTS, particles having Sn 2 S6 4" surface ligands for a shell ).
  • the particles are subsequently applied to a surface (e.g., the surface of a graphene containing composition) for the formation of a matrix.
  • a molecular metal chalcogenide complex is present, subsequent treatment, such as by mild heating, can convert the molecular metal chalcogenide complexes to semiconducting phases with embedded nanoparticles/nanocrystals.
  • the above described embodiments for preparing matrices with embedded nanoparticles employing graphenes and NPs comprising a molecular metal chalcogenide complex can be coupled, such as, for example, by separately preparing both materials and combining the products (e.g., in a nano-ink prior to its application to the surface of a nascent thin-film, or by separately delivering both materials to the surface upon which a thin-film solar absorber is being formed).
  • the graphenes comprising NPs and NPs comprising molecular metal chalcogenide complexes may be contacted simultaneously or sequentially with a surface and then processed (e.g., by heating) to obtain thin-films with embedded nanoparticles/nanocrystals as described below.
  • these matrices provide stabilization of various nanostructures while enabling strong electronic coupling within the NP/NC containing solids (e.g., the graphene nanoplatelet continuing medium).
  • a ligand (e.g., a molecular metal chalcogenide complex) exchange procedure is used to provide capped NPs (e.g., MCCL- capped NPs) that form stable colloidal suspensions or dispersion in water or other polar solvents
  • the exchange procedure involves a phase transfer of the newly formed NPs from a nonpolar (less polar) organic medium into a more polar solvent.
  • MCCL- capped NPs are formed by exchanging a molecular metal chalcogenide ligand (MCCL) for a hydrocarbon containing ligand associated with a NP (e.g. its core), phase transfer from non- polar or low-polarity solvents to a more polar solvent may occur.
  • solubilization of the NPs in a nonpolar solvent is provided by means of a nonpolar group (e.g., organic or organometallic groups) attached to the NP by a thiol ligand.
  • NPs having such non- polar groups in their shell may typically be dissolved in a nonpolar solvent at about 1 to about 20 mg/ml.
  • a molecular metal chalcogenide ligand complex which can displace such non-polar groups resulting in MCCL-capping, is facilitated by the nucleophilic nature of the NPs, the electrophilicity of the un-coordinated metal atoms at the NP surface, and the introduction of a host solvent medium that can interact with the hydrocarbon ligands.
  • the capped NPs Due to the colloid stabilizing effect of the molecular metal chalcogenide ligand (e.g., MCCL ligands), the capped NPs can be provided in water, DMSO, formamide, ethanolamine or a variety of other solvents (e.g., various glymes and other polar solvents).
  • solvents e.g., various glymes and other polar solvents
  • a property of MCCL ligands is their ability to transform into amorphous or crystalline metal chalcogenides (e.g., semiconductor or semi-conducting materials) upon mild thermal treatment.
  • amorphous or crystalline metal chalcogenides e.g., semiconductor or semi-conducting materials
  • Sn 2 S6 ⁇ neutralized by hydrazinium counter ions
  • N 2 H5 4 Sn 2 S6 ⁇ SnS 2 + 4N 2 H 4 + 2H 2 S.
  • the resulting SnS 2 phase crystallizes into pure electronic-grade semiconductor.
  • this ligand conversion process involves a total weight loss of only about 3.8%, the possibility of strain related crack formation is reduced.
  • the weight percentage of MCCLs that are needed to stabilize a colloidal NP is relatively small.
  • thermogravimetric data supports the conclusion that 2 to 10 weight % of MCCLs will stabilize colloidal NCs. Subsequent heating to 180°C, resulting in greater than 70%, 80%, 85%, 90%, 95%, 96%, 97%, 98%, 99%, 99.5%, 99.7%, 99.8%, 99.9% or the complete disappearance of entities containing C-H, S-H, or N-H bonds.
  • NPs prepared using dodecanethiol and ODPA-HDA-TOPO octadecylphosphonic acid, hexadecylamine, and trioctylphosphine oxide
  • dodecanethiol and ODPA-HDA-TOPO octadecylphosphonic acid, hexadecylamine, and trioctylphosphine oxide
  • MCCL-capping may also impart substantial stability to NPs.
  • Thin films prepared with NPs having metal chalcogenide ligand complexes shells, have conductivities increased by several by orders of magnitude.
  • nanoparticle ink deposited films that are prepared from the alkanethiol (e.g., dodecanethiol) capped nanoparticles resulted in films that were highly insulating.
  • Conductivities ( ⁇ values) for those films are on the order of ⁇ 10 ⁇ 9 S cm -1 for 5-nm NPs (Au) and less than 10 ⁇ 12 S cm -1 for 5.5-nm NPs (CdSe).
  • Replacement of the dodecanethiol ligands with Sn 2 S6 4_ results in an increase in the conductivity by -11 orders of magnitude, approaching ⁇ values of -200 S cm -1'
  • the highest conductivity reported for Au NP solids with short-chain organic capping e.g., n-ethyl or n-butanethiol was less than 10 _1 S cm -1 .
  • the disappearance of the plasmonic absorption peak strongly supports the metallic nature of Sn 2 S 6 4 -capped Au NP solids. Reportedly there is a strong decrease in the mean interparticle distance from -1.6 nm for dodecanethiol-capped Au NCs to less than 0.5 nm for Sn 2 S 6 4 ⁇ -capped Au NCs.
  • the conductivity of Sn 2 S 6 4 ⁇ -capped Au NC solids is higher than the conductivities of conducting polymers and graphene-based composites.
  • MCCLs Metallic Chalcogenide Capping Ligands
  • NPs including NPs associated with a graphene (e.g., a graphene platelet).
  • MCCL-capped NPs can be employed to form a highly conductive solar absorbing continuum that can provide an effective (e.g., low resistance) pathway to the solar cell conductor media for electrons freed from their atoms/molecules by light interacting with the NPs. This is especially the case when the continuum is comprised of a properly deposited graphene film and metal molecular metal chalcogenide ligand capped NPs.
  • the removal of the undesirable organic ligand moieties from the NP is preferably achieved by prior reaction with a molecular metal chalcogenide ligand to form a MCCL-capped NP.
  • a molecular metal chalcogenide ligand to form a MCCL-capped NP.
  • NPs with a shell comprising organic ligands can interact effectively with graphenes, and particularly where they interact with more than one graphene (e.g., the NP becomes embedded or intercalated between layers of graphenes), it may not be necessary to displace all of the organic ligands as a sufficient path for electrons freed by light interacting with the NP to reach the conductor media of a solar cell may already be provided by the graphenes.
  • Such ligand-capped NP containing materials can be deposited as is (e.g., as part of a nano-ink) to yield a viable solar absorber layer that provides enhanced electron mobility between the solar absorber nanoparticles and the conductor media of the solar cell.
  • the graphene containing materials may be subject to thermal decomposition of the molecular metal chalcogenides complexes to further enhance the electrical conductive properties of the solar absorber layers and provide a further enhancement of the electron mobility between the solar absorber nanoparticles and the conductor media of the solar cell.
  • the electron-conducting graphene (CHRM) disclosed herein can be configured with a hole-conducting host (e.g., CuIni_ ⁇ Ga ⁇ Se 2 ) in order to form materials with distributed networks of p-n junctions. This provides a mechanism for solution based production process that makes this approach appealing for large-area, roll-to-roll production of thin-film solar cells.
  • CHRM electron-conducting graphene
  • nano-inks that can be formulated as nano-inks and subsequently processed into solar absorber thin films.
  • the nano-inks are also compatible with a variety of application processes.
  • nano-ink is deposited by spraying. This spraying can utilize an ultrasonic atomization process, which enhances the application process by providing improved atomization and aerosolization of the nano-ink droplets.
  • the solvents of the nano-inks described herein may also be compatible with a variety of subsequent processing steps. Depending on the solvent chosen, processing at different temperatures and under a variety of different conditions are possible.
  • Nano-ink containing compositions incorporating NPs having a core shell structure where the core is the chalcopyrite metal alloy and the shell is an organic capping ligand (sometimes denoted as an "OCL”) can be subject to a pyrolysis regime to eliminate substantially all of the organic shell.
  • the volume of this organic shell is estimated at 50% of that of the "as-applied" film (assuming that this film is aerosol sprayed onto a room temperature surface). In such case, this large percentage of organic shell material must egress from the absorber layer during the elevated temperature regime of the sintering process. The result is a substantial shrinkage, which can result in cracking of the absorber layer.
  • ultrasonic spray pyrolysis application of the compositions on to substrates at an elevated temperature advantageously avoids cracking of the solar absorber layer due to subsequent shrinkage.
  • ultrasonic spray pyrolysis application of the nano-ink containing compositions on to substrates at elevated temperatures contributes to the egress of the organic shell component and solvent during the application of the nano-ink containing composition. Because at lest a portion of the organic shell component and exits the absorber layer prior to the layer becoming set, the shrinkage it experiences is less than the same composition applied as an aerosol using compressed gas on a room temperature surface.
  • the absorber layer is pseudo- plastic at the time, at least a portion of the shell is volatilized, the absorber layer is more shrinkage tolerant, and again, less subject to cracking.
  • a pre-sintering regimen that mitigates the deleterious film quality consequences that are subsequently imparted upon the solar absorber film by the use of NP with an organic capping ligand (OCL ) shell.
  • OCL organic capping ligand
  • the OCL is an entity that is essential to the synthesis of the nano-ink colloid, and contributes to the formation of a stable dispersion of the NPs in a solvent
  • the OCL represents a significant volume of the nanoparticle (in the range of ten percent to 60 percent and higher). The demand for such a substantial volume of OCL is dictated by the complex stability constraints of nano-ink.
  • nano-ink deposition process results in growth of the nanoparticle to a size of 10 nanometers or more which is outside this catastrophic
  • Pre-sintering regimens are not intended to fully eliminate the entirety of the organic carbon trapping entities that arise from the OCL, but rather to reduce them to a manageable level. When OCL is reduced to a manageable level, subsequent thermal processing can achieve a viable solar absorber film.
  • the OCL is reduced by as much as an order of magnitude, and the nanoparticle is capped with an organic capping ligand that is in the range of a few nanometers thick. Removal of this remaining organic capping ligand (which still forms a nanoscale junction, or nanogap between the metal alloy nanoparticles) must be subsequently provided by the subsequent processing. This is done by a second phase of ablative sintering, which addresses this nanogap junction medium by illuminating the composite (precursor film that has been subject to pre- sintering) with one or more intense optical pulses that results in the destructive collapse of the nanogap.
  • This collapse is irreversible, occurring with the simultaneous ablation of the dielectric from the metal alloy nanoparticle junctions and ultimately the sintering of the metal alloy.
  • OCL Organic Capping Ligand
  • the nano-ink is deposited by spraying.
  • This spraying can utilize an ultrasonic atomization process, which enhances the application process by providing improved atomization and aerosolization of the nano-ink droplets.
  • the pre-sintering deposition process can be repetitious such that a multitude of thin layers (e.g., 3, 5, 7, 10, 25, 20 etc.) is deposited, with each layer being subjected to the pre-sintering phenomenon.
  • a multitude of thin layers e.g., 3, 5, 7, 10, 25, 20 etc.
  • This will yield a series of thin film layers, which in some embodiments will comprise a series of layers, each about 100-300nm thick or 100- 200nm thick.
  • the nanoparticles used herein which are of the form I-III -VI2 as well as the I- II-IV- VI are produced by the decomposition of single-source-precursors ("SSPs").
  • SSPs single-source-precursors
  • a preferred method for converting these SSP's into the nanoparticles used herein is microwave irradiation.
  • the nanocrystalline ink composition is prepared using the single molecular source precursor (SSP) rather than multiple compounds to contribute elements of the product chalcopyrite.
  • SSP single molecular source precursor
  • a single source precursor is used in the preferred methods to obtain all of the elements in the resulting chalcopyrite nanoparticle.
  • a single-source precursor is used to obtain all the elements (Cu, In, and Se) in the CuInSe 2 .
  • Such a nanoparticle production protocol makes possible the access to control of the nanoparticle sizes that are appropriate for the intended service that is described herein.
  • the diameters of the nanoparticles that are appropriate for use in the embodiments described herein can be controlled. This control is by the concentration of the SSPs. Increasing the concentration increases the diameter of the resulting nanoparticle. The diameters decrease with increasing concentration of thiol. Increasing the reaction temperature results in increased nanoparticle diameter.
  • Production of the nanoparticles used herein involves control of the growth to a range that is optimum for this application.
  • the range is betweenl-5 nm.
  • the SSP's used herein can optionally incorporate selenium and sulfur as an integral part of the molecular structure, with the result that a quantity of sulfur or selenium will be incorporated in the structure of the nanoparticle.
  • a Se nanoparticle is commercially available, for example from QuantumSphere, Inc. (Santa Anna, CA, USA).
  • the nano-inks described above can be applied to a substrate that is appropriate for thin- film production.
  • the preparation of suitable substrates is well known to persons who are knowledgeable in this field.
  • the nano-inks can be applied by spraying, printing, spin casting, roll-to-roll printing, flexo-printing, gravure printing, etc.
  • Graphene Oxide platelets have a wide range of chemical groups on their surface and edges, including reactive oxygen species such as hydroxyl and epoxy groups on their basal planes. Since there is such a wide range of chemical compositions present on the GO, there are many prospects for functionalizing, which can involve the formation of covalent bonds, ionic- pi-pi bonds, van der Waals interactions, etc.
  • One approach to the functionalization (in this case, nanoparticle modification) of these Graphene Oxide platelets utilizes orthogonal reaction of differing groups on the graphene oxide, whereby it is even possible to associate more than one type of NP with platelets through reactions selective for one or more different groups on the graphene oxide.
  • the synthesis process disclosed herein is directed toward a very fast and reliable synthesis protocol for achieving the NP/NC functionalization of a graphene platelet.
  • the metal nanoparticle is provided in the form of a core-shell (alkanethiol colloid stabilized) solution.
  • the solvent that is used in the process is typically a high boiling point member of the "glyme" family.
  • the solvent is a glyme. In additional embodiments the solvent is a monoglyme, diglyme, butyl-diglyme, tetraglyme. In another embodiment the solvent is selected from polyethylene glycol di-butyl ether, monoethylene glycol dimethyl ether, or diethylene glycol dibutyl ether. In another embodiment the solvent is a polyethylene glycol dibutyl ether (PEGDBE), whose boiling point is above 320 degrees C. The use of high boiling point solvents enables the ligand exchange onto the graphene.
  • PEGDBE polyethylene glycol dibutyl ether
  • PEGDBE and similar glymes
  • this solvent possesses a three coordinate complexant feature, which provides a means for translating the functional core to the residence site on the surface of the graphene.
  • Prior experience with an ultrafast microwave assisted deposition of naked nanoparticles on Graphene has been reported in the literature.
  • One such naked nanoparticle synthesis regime has been disclosed by Jasuja et al of the Kansas State University wherein the "naked" sites on a graphene oxide nanoplatelet provides a high density of bondable oxy-functional groups.
  • the microwave enable deposition of NPs (e.g., NPs with a CIGS core) onto graphene platlets comprises:
  • Oxidation of Graphite - Graphite is oxidized using the Hummers Method (i.e. a
  • Graphite Oxide The chemical reduction of the GO is the most common method but it is not the only method for the preparation graphenes. It is possible to produce thermodynamically stable carbon oxide by directly heating the GO in a furnace. Reduction can also be achieved using either of the following protocols: the Graphite Oxide (GO) can be subjected to a microwave environment (no electrolyte) wherein the thermal regime will reduce the GO (this requires an inert gas atmosphere); or, alternatively, the NP implantation regimen can be extended such that there is a subsequent reduction of the GO bearing NPs.
  • a microwave environment no electrolyte
  • the NP implantation regimen can be extended such that there is a subsequent reduction of the GO bearing NPs.
  • NPs e.g., CIGS NPs
  • CIGS NPs CIGS NPs
  • the transparent synthesis vessel allows the inert gas to sweep through the stirred reaction vessel, this vessel can be placed inside the microwave cavity and a fiber optic temperature probe is installed, at which point an argon purge is initiated and controlled from outside the oven.
  • the purge duration should be on order of 10 minutes.
  • the digestion vessel can be purged for approximately the same time prior to the seal of the cap. In this case it is desirable to provide a secondary barrier to protect the vessel contents from any subsequent contact with atmosphere during the remaining setup.
  • the possibility of maintaining an inert gas purge within the microwave cavity during the synthesis process should be considered.
  • Microwave Regimen A the time temperature and pressure regime for a typical
  • microwave synthesis is presented in Figure 1 of U.S. Patent No. 7,718,707. Note the rate of rise for the full power on regime, and the corresponding rate of temperature decay. As illustrated in that figure, the desired time interval at peak temperature can be achieved by providing a series of run cycles. The MW enabled "naked ion
  • the microwave protocol does not have to be continuous and microwave energy can be applied as appropriate for the process constraints including temperature and pressure.
  • the time needed for the association of the NPs with the graphene is about one to about ten minutes of total microwave exposure using SST-C as a solvent.
  • Solvent System-A is the a 1:1 blend of toluene and THF is employed. This is a relatively volatile solvent mixture.
  • THF a relatively volatile solvent mixture.
  • Solvent System-B has a considerably higher boiling point solvent, terpineol, with a boiling point of 220 degrees C.
  • the SST-C is a blend of a non-VOC solvent (tertbutylacetate) ,whose boiling point is the same as toluene, and PEGDBE, which acts as a "tail solvent” that has a higher boiling point (about 300 degrees C) and permits reactions at a higher temperature after the tertbutylacetate has been removed.
  • a non-VOC solvent tertbutylacetate
  • PEGDBE acts as a "tail solvent” that has a higher boiling point (about 300 degrees C) and permits reactions at a higher temperature after the tertbutylacetate has been removed.
  • Nanoparticles are typically suspended in a ratio of 95 parts (by weight) of solvent to 5 parts (by weight) of dry nano-ink powder (e.g., NPs). The mixture is sonicated for 5 minutes and the resulting nano-ink preparation is filtered.
  • dry nano-ink powder e.g., NPs
  • the thickness of an inorganic solar absorber layer plays a role in the optimization of the internal quantum efficiency of the resulting devices.
  • devices with thicker nanocrystal layers are reported to have lower power conversion efficiency, despite the increased photon absorption.
  • the internal quantum efficiency of CIS based devices having a size ranging from 150 nm to 540 nm decreased significantly as the film thickness increased.
  • the thin, most efficient devices exhibited internal quantum efficiencies as high as 40 percent, and this is observed with films that were deposited on the low end of the thickness range - namely 150 nm.
  • nanoplatelets provide a scaffold onto which thin NPs absorbers (e.g., a CIS type of absorber) can be applied, they provide a mechanism to utilize the observed correlation between layer thickness and efficiency. Because graphene platelets are essentially transparent, a multitude of layers of thin nanoparticle coated graphene platelets can be prepared as a single absorber film that can provide the desired level of solar absorbance without compromising the quantum efficiency of the absorber film.
  • thin NPs absorbers e.g., a CIS type of absorber
  • an engineered photonic flash for sintering is an optional embodiment that relates to thermal treatment to achieve ablation of organic carbon residues and sintering of the deposited nanoparticles by means of an engineered photonic pulse regimen.
  • Engineered photonic pulse regimens provide a means to manage the diffusion, reaction, nucleation, passivation and grain growth phenomena during the transition of the precursor to a solar absorber layer having a high optoelectronic quality.
  • the use of an engineered photonic flash regimen contributes to the cost effective production process for such thin film poly crystalline photovoltaic absorber layers.
  • Polycrystalline thin film absorber layers can consist of chalcopyrites, sphalerites, kesterites. This disclosure provides an approach to the production of these absorbers utilizing nanocrystalline precursor dispersions that are deposited onto a suitably prepared substrate.
  • the nano-crystal dispersion provides a uniform composition of metal precursors, which upon exposure to a precisely engineered thermal processing provided by an engineered photonic flash regimen delivers an optoelectronic layer.
  • the design of the photonic flash post-thermal processing regimen is comprised of two high energy and extremely rapid thermal pulse regimens.
  • the first is designed to provide the pyrolysis or thermal ablation of the organic products which must necessarily be removed from the nano-crystalline composite precursor media.
  • the second regimen is designed to provide the sintering of the nanoparticles into grains and permit the growth of same in such a manner to advance the formation of the solar absorber functionality objectives, which are provided by the simultaneous sintering, passivation, nucleation and grain growth.
  • the nano-crystalline film composite can incorporate additives such as dopants and passivation media, optionally in nano form that provide the means to enhance the opto-electronic performance.
  • the film can be converted to an absorber layer using an engineered photonic flash regimen.
  • the nanoparticle film layer is exposed to a properly engineered photonic pulse, which is of an intensity and duration sufficient to bring about the chemical reactions that are appropriate to achieve the objectives of its application.
  • a properly engineered photonic pulse which is of an intensity and duration sufficient to bring about the chemical reactions that are appropriate to achieve the objectives of its application.
  • said photonic pulse is delivered within a very short duration at a suitable intensity, and when such engineered photonic pulse consists of appropriate frequency and repeats, it can cause the nanoparticulate matrix to undergo the desired (and optimized) chemical reaction with suitable kinetics.
  • Such regimes simultaneously introduce conditions which are contra posed to those that would contribute to undesirable results in the resulting absorber layer (e.g., undesirable effects that would otherwise be brought about as a result of the variations in melting point or boiling point of the chemical reaction participants).
  • One embodiment described herein provides for fabrication of a thin film ternary chalcopyrite absorber layers comprised of copper indium gallium di-selenide, more often referred to as CIGS.
  • the chalcopyrite devices described herein are also referred to as I-III-VI2 devices, according to their constituent elemental groups.
  • Other embodiments provide for fabrication of thin film kesterite absorber layers comprised of copper, zinc, tin selenide more often referred to as CZTS.
  • the kesterite devices described herein are also referred to as I- II- IV- VI devices, according to their constituent elemental groups.
  • nanoparticles that are classified as chalcopyrites or kesterites may be produced using a composition of single molecular source ("single source precursors" (SSP's). These are combined into a suitable solution phase whereupon they are subsequently subjected to a specific thermolysis regime.
  • SSP's single molecular source precursors
  • One illustrative example of the approach to such processing involves the use of alkylthiol ligands in solvent, along with the appropriate SSP components, chalcopyrite nanoparticles that exhibit properties expected for chalcopyrite nanoparticles that are appropriate for use in this application.
  • organics that are associated with capping agents e.g., shell of an NP
  • surfactant materials that are used to produce and stabilize the nano-inks are removed by pyrolysis.
  • the pyrolysis of organics is achieved by the introduction of an energy pulse that delivers sufficient energy to a chalcopyrite containing precursor film to effect the removal of the organics from the composite, but at the same time the resulting thermal regime is not high enough to volatilize an unacceptably high amount of the chalcopyrite species.
  • the melting points of chalcopyrites (about 1,000° C) differ significantly from the other components, where Sulfur melts at about 115° C, Selenium at about 221° C, and Tellurium at about 450° C.
  • the removal of the organics must occur under suitably engineered and controlled conditions. It is possible to achieve those objectives by the appropriate selection of the capping agents associated with the nanoparticles, appropriate selection of surfactant materials in the nano-inks, and by the use of intense photonic light pulses which are of properly engineered duration and which are provided at an energy density in the range of 1-50 joules per cm ⁇ 2 .
  • the control of the volatilization of the selenium is necessary in order to mitigate undesired diffusion and the corollary volatilization of the Se that is provided in the nano- particulate medium of the nano-ink.
  • This regime provides the mechanism of CIGS formation and crystallization as the result of an intense photonic pulse from a xenon source.
  • the mechanism of CIGS formation, sintering, and crystallization using photonic pulses may be explained based on the melting point of CIG (550° C) and Selenium (217° C). Under these conditions the melting of the CIG and Se nanoparticles, the nucleation, passivation and grain growth occurs in a surprisingly short reaction time interval. Those processes take place within the sintering time interval, which occurs within a timeframe that is engineered, such that the desired absorber layer structure is achieved. In one embodiment this engineered time frame is within the range of microseconds to a few milliseconds, and accordingly this reaction interval is sufficiently short that precludes the oxidation of the constituent elements that are provided by the nanoparticulate precursor.
  • selenization is conducted without changing the microstructure of the materials as selenium diffuses into the CIG lattice.
  • substantially all of the selenium e.g., nano-selenium or nano particle selenium
  • the photonic pulse can form a CIGS film from a CIG precursor and Se nanoparticles in a very short time interval.
  • CGIS film formation can occur with pulses of as short as microsecond in duration.
  • Elemental analysis of the absorber layer that results from short pulse photonic sintering processes indicates that the Ga, Cu, In, Ca, and Se concentrations remain virtually constant through the entire cross-section of the absorber film. That confirms the short pulse photonic processes eliminate any grading of gallium to indium ratio in the CIGS structure, with the result that the film is a homogeneous, single phase material.
  • CIGS films are prepared using 20 Joules per cm 2 light intensity for a duration of 2 milliseconds. That brief and intense process results in a diffusion of selenium to form the tetragonal chalcopyrite structure within a uniform and relatively dense absorber layer, while at the same time altering the surface morphology to provide compact grains in the range of 0.3 to 1.0 micron, or 0.1 to 1 micron.
  • equipment produced by Novacentrix Corporation or Xenon Corporation which is capable of delivering the engineered photonic energy pulses at the energy level, pulse duration, wavelength, and pulse frequency is employed in the methods and processes described herein.
  • a method for the preparation of a nano-ink comprising: contacting a nanoparticle (NP) bearing hydrocarbon ligands with a phase transfer solvent and subject the resulting mixture to heat sufficient to sinter the NPs and displace at least some of the hydrocarbon ligands, wherein the NPs are increased in size by sintering.
  • NP nanoparticle
  • metallic chalcopyrite comprises copper indium selenide (CIS), Copper- indium-gallium-diselenide (CIGS) or copper-zinc-tin-selenide (CZTS).
  • NPs that have been increased in size by sintering are made to contact a graphene or graphene oxide platelet (GO-platelet) and subjected to heat sufficient for the nanoparticle to associate with surface of the graphene or GO-platelet or intercalate into said graphene or GO-platelet.
  • GO-platelet graphene oxide platelet
  • phase transfer solvent acts as a chelate ligand of said NP as a result of its coordination sites and its molecular
  • the solvent is a glyme (monoglyme), diglyme, butyl-diglyme, tetraglyme, polyethylene glycol di-butyl ether, monoethylene glycol dimethyl ether, or diethylene glycol dibutyl ether.
  • a nano-ink comprising one or more MCCL-capped NPs, where said NP have an average size in a range selected from about: 3nm-200nm, 3nm - lOOnm, 3nm-50 nm, 3nm-25 nm, 3nm-10 nm, 5nm-200nm, 5nm -lOOnm, 5nm-50 nm, 5nm-25 nm, 5nm-10 nm, lOnm- 200nm, lOnm-lOOnm, 10nm-50nm, 10nm-25nm, 20nm-200nm, 20nm -lOOnm, 20nm- 50nm, 15nm-25 nm, and 15nm-20nm.
  • a nano-ink comprising one or more MCCL-capped NPs.
  • a nano-ink comprising one or more NPs associated with or intercalated into a graphene.
  • the metallic chalcopyrite comprises copper- indium-gallium-diselenide (CIGS) and/or copper -zinc-tin-selenide (CZTS).
  • CGS copper- indium-gallium-diselenide
  • CZTS copper -zinc-tin-selenide
  • nano-inks of any of embodiments 21-26 further comprising a solvent.
  • the solvent comprises on or more of: a solvent that is more polar than hexane or toluene, an ether, a glyme (monoglyme), diglyme, butyl- diglyme, tetraglyme, or a solvent that has a boiling point greater than about 200, 225, 250, 275, or 300 centigrade.
  • a method for producing a thin-film solar absorber wherein the electron mobility is enhanced and electron traps are minimized comprising: a) applying a nano-ink according to any of embodiments 20-28 to a thin-film substrate to form a nano-ink film; and
  • nano-ink comprises an organic solvent
  • step of applying said nano-ink to said substrate further comprises removing the bulk of said organic solvent to form a dried nondensified precursor film that is to be subject to said pre-sintering pyrolysis.
  • nano-ink further comprises an additional amount of a metallic chalcogenide capping ligand.
  • any of embodiments 34-36 wherein said method further comprises thermal processing of the precursor film that: releases at least a portion of residual organic species that will compromise the energy conversion efficiency of the solar absorber formed from said nano-ink, and/or sinters the dried nondensified precursor film subject to said pre- sintering pyrolysis to achieve a final desired average grain size.
  • said method further comprises subjecting the precursor film to an engineered photonic pulse regimen that: releases at least a portion of residual organic species that will compromise the energy conversion efficiency of the solar absorber formed from said nano-ink, and/or sinters the dried
  • nondensified precursor film subject to said pre-sintering pyrolysis to achieve a final desired average grain size.
  • the thin-film solar absorber is comprised of monodisperse, passivated, non-aggregated semiconductor nanocrystals.
  • the nanoparticles present in said nano- ink comprise selenium and/or sulfur.
  • nanoparticles present in said nano- ink comprise sodium.
  • the duration of photonic energy pulse is between 100 picoseconds and 50 milliseconds.
  • the engineered photonic pulse regimen comprises one or more pulses, two or more pulses, three or more pulses, five or more pulses, ten or more pulses, or a series of pulses, and the number of pulses ranges from 1 to 100.
  • a method for sintering chalcopyrite nano-particles to produce a densified chalcogenide solar absorber layer having high optoelectronic quality comprising:
  • a precursor colloidal nanoparticle dispersion to a substrate, wherein the said precursor colloidal dispersion includes a plurality of chalcopyrite nanoparticles that are combined with an organic solvent;
  • the method of embodiment 60 where the engineering of the photonic energy regime delivers a photonic energy input that lasts for a sufficiently short time interval to preclude substantial diffusion of components in the chalcopyrite, while delivering an energy density sufficient to provide the required CIGS sintering and annealing.
  • the nano-ink comprises particles of a CZTS (a kesterite)or particles comprising CdTe.
  • a method of producing a solar absorber film wherein an exposure of a substrate to an engineered photonic regime removes substantially all organic contaminants prior to the deposition of the colloidal nano-particle precursor dispersion, wherein said contaminants have the ability to adversely affect the efficiency of the solar absorber film if not removed.
  • nanoplatelet species is a graphene platelet or a graphene oxide platelet.
  • bonding mechanism of MCCL-capped NPs on a graphene platelet is a pi:pi bond or a covalent bond.
  • absorber layer on graphene platelet are stacked so as to increase the solar absorbance provide by the multiple layers.

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Abstract

La présente invention concerne des dispositifs à films minces à mobilité électronique accrue absorbant les rayonnements solaires, économiques et écoénergétiques. Les dispositifs sont produits par des procédés tels que la pulvérisation pyrolytique, le préfrittage et/ou le frittage flash photonique.
PCT/US2012/025529 2011-02-16 2012-02-16 Films à mobilité électronique accrue absorbant les rayonnements solaires et leurs procédés de préparation WO2012112821A1 (fr)

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CN104151336A (zh) * 2014-08-08 2014-11-19 复旦大学 一种多级孔结构的金属有机框架化合物的制备方法
WO2015016651A1 (fr) * 2013-08-01 2015-02-05 주식회사 엘지화학 Précurseur de phase d'agrégat pour fabriquer une couche d'absorption de lumière de cellule solaire et son procédé de fabrication
WO2015016652A1 (fr) * 2013-08-01 2015-02-05 주식회사 엘지화학 Composition d'encre pour fabriquer une couche d'absorption de lumière de cellule solaire et procédé de fabrication d'une couche mince utilisant celle-ci
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WO2015039106A3 (fr) * 2013-09-16 2015-05-07 Wake Forest University Films polycristallins comprenant un chalcogénure de cuivre, de zinc et d'étain et procédés pour le fabriquer
WO2015082940A1 (fr) * 2013-12-06 2015-06-11 Nanoco Technologies Ltd Nanoparticules à noyau/enveloppe pour films absorbants photovoltaïques
US10269994B2 (en) 2015-10-12 2019-04-23 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
US10453978B2 (en) 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
CN110357633A (zh) * 2019-07-11 2019-10-22 上海交通大学 一种室温快速制备钛铝碳陶瓷的方法
WO2020123022A1 (fr) * 2018-12-12 2020-06-18 The Trustees Of Princeton University Nanocristaux de pérovskite hybrides organiques-inorganiques modifiés en surface et applications correspondantes

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JP2014127563A (ja) * 2012-12-26 2014-07-07 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
US9478684B2 (en) 2013-08-01 2016-10-25 Lg Chem, Ltd. Three-layer core-shell nanoparticles for manufacturing solar cell light absorption layer and method of manufacturing the same
WO2015016652A1 (fr) * 2013-08-01 2015-02-05 주식회사 엘지화학 Composition d'encre pour fabriquer une couche d'absorption de lumière de cellule solaire et procédé de fabrication d'une couche mince utilisant celle-ci
JP2016528718A (ja) * 2013-08-01 2016-09-15 エルジー・ケム・リミテッド 太陽電池光吸収層製造用３層コア−シェルナノ粒子及びその製造方法
WO2015016650A1 (fr) * 2013-08-01 2015-02-05 주식회사 엘지화학 Nanoparticules noyau-enveloppe à trois couches pour fabrication de couche d'absorption de lumière pour cellule solaire et procédé de préparation de celle-ci
WO2015016651A1 (fr) * 2013-08-01 2015-02-05 주식회사 엘지화학 Précurseur de phase d'agrégat pour fabriquer une couche d'absorption de lumière de cellule solaire et son procédé de fabrication
CN105308758A (zh) * 2013-08-01 2016-02-03 株式会社Lg化学 用于制造太阳能电池光吸收层的三层核-壳型纳米颗粒及其制造方法
CN105308759A (zh) * 2013-08-01 2016-02-03 株式会社Lg化学 用于制造太阳能电池之光吸收层的墨组合物及使用其制造薄膜的方法
US9887305B2 (en) 2013-08-01 2018-02-06 Lg Chem, Ltd. Agglomerated precursor for manufacturing light absorption layer of solar cells and method of manufacturing the same
US20160133766A1 (en) * 2013-08-01 2016-05-12 Lg Chem, Ltd. Three-layer core-shell nanoparticles for manufacturing solar cell light absorption layer and method of manufacturing the same
US9876131B2 (en) 2013-08-01 2018-01-23 Lg Chem, Ltd. Ink composition for manufacturing light absorption layer of solar cells and method of manufacturing thin film using the same
TWI589008B (zh) * 2013-08-01 2017-06-21 Ｌｇ化學股份有限公司 用於製造太陽能電池光吸收層之積聚前驅物及其製造方法、墨液組成物及利用此墨液組成物製造薄膜之方法、薄膜及太陽能電池
WO2015039106A3 (fr) * 2013-09-16 2015-05-07 Wake Forest University Films polycristallins comprenant un chalcogénure de cuivre, de zinc et d'étain et procédés pour le fabriquer
JP2019054251A (ja) * 2013-12-06 2019-04-04 ナノコ テクノロジーズ リミテッド 光起電力吸収層用コアシェル型ナノ粒子
WO2015082940A1 (fr) * 2013-12-06 2015-06-11 Nanoco Technologies Ltd Nanoparticules à noyau/enveloppe pour films absorbants photovoltaïques
TWI687369B (zh) * 2013-12-06 2020-03-11 納諾柯技術有限公司 用於光伏打吸收膜之核殼奈米顆粒
CN105794001A (zh) * 2013-12-06 2016-07-20 纳米技术有限公司 用于光伏吸收剂膜的核-壳纳米粒子
KR20160075711A (ko) * 2013-12-06 2016-06-29 나노코 테크놀로지스 리미티드 광전지의 흡수 필름을 위한 코어-쉘 나노입자
JP2017501571A (ja) * 2013-12-06 2017-01-12 ナノコ テクノロジーズ リミテッド 光起電力吸収層用コアシェル型ナノ粒子
KR101888579B1 (ko) * 2013-12-06 2018-08-14 나노코 테크놀로지스 리미티드 광전지의 흡수 필름을 위한 코어-쉘 나노입자
CN109599323A (zh) * 2013-12-06 2019-04-09 纳米技术有限公司 用于光伏吸收剂膜的核-壳纳米粒子
CN104151336B (zh) * 2014-08-08 2016-05-11 复旦大学 一种多级孔结构的金属有机框架化合物的制备方法
CN104151336A (zh) * 2014-08-08 2014-11-19 复旦大学 一种多级孔结构的金属有机框架化合物的制备方法
US10453978B2 (en) 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
US10749050B2 (en) 2015-10-12 2020-08-18 International Business Machines Corporation Thin film CZTSSe photovoltaic device
US10269994B2 (en) 2015-10-12 2019-04-23 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
WO2020123022A1 (fr) * 2018-12-12 2020-06-18 The Trustees Of Princeton University Nanocristaux de pérovskite hybrides organiques-inorganiques modifiés en surface et applications correspondantes
CN110357633A (zh) * 2019-07-11 2019-10-22 上海交通大学 一种室温快速制备钛铝碳陶瓷的方法

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