WO2012102270A1 - Procédé de fabrication de dispositifs semi-conducteurs - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs Download PDF

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Publication number
WO2012102270A1
WO2012102270A1 PCT/JP2012/051444 JP2012051444W WO2012102270A1 WO 2012102270 A1 WO2012102270 A1 WO 2012102270A1 JP 2012051444 W JP2012051444 W JP 2012051444W WO 2012102270 A1 WO2012102270 A1 WO 2012102270A1
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WIPO (PCT)
Prior art keywords
film
semiconductor back
semiconductor
back surface
adhesive layer
Prior art date
Application number
PCT/JP2012/051444
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English (en)
Japanese (ja)
Inventor
尚英 高本
文輝 浅井
豪士 志賀
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日東電工株式会社
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Publication of WO2012102270A1 publication Critical patent/WO2012102270A1/fr

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    • H—ELECTRICITY
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Definitions

  • the present invention relates to a semiconductor device using a film for a semiconductor back surface with an adhesive layer, comprising a film for a flip chip type semiconductor back surface and a ring-shaped adhesive layer provided on the outer periphery of the film for a flip chip type semiconductor back surface. It relates to the manufacturing method.
  • the flip chip type semiconductor back film is used for protecting the back surface of a semiconductor element such as a semiconductor chip and improving the strength.
  • a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) is widely used (for example, Patent Documents). 1-10).
  • the flip chip connection is fixed in such a manner that the circuit surface of the semiconductor chip faces the electrode forming surface of the substrate.
  • the back surface of the semiconductor chip may be protected by a protective film to prevent the semiconductor chip from being damaged.
  • This protective film may be laser-marked with various information (for example, character information and graphic information) such as an identification number of a semiconductor chip. Conventionally, laser marking is performed after a semiconductor wafer is diced into individual semiconductor elements (see, for example, Patent Document 11).
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device manufacturing method capable of efficiently performing laser marking on a flip chip type semiconductor back film.
  • the present inventors have applied a semiconductor wafer and a dicing ring to a film for a semiconductor back surface with an adhesive layer, and then laser marked the flip chip type semiconductor back surface film. As a result, it was found that the laser marking can be efficiently performed on the flip chip type semiconductor back film, and the present invention has been completed.
  • the method for manufacturing a semiconductor device has a pressure-sensitive adhesive layer having a flip-chip type semiconductor back film and a ring-shaped pressure-sensitive adhesive layer provided on the outer periphery of the flip chip type semiconductor back film.
  • Step A for preparing a film for semiconductor back surface Step B for attaching a semiconductor wafer on the flip chip type semiconductor back surface film on the inner side of the pressure-sensitive adhesive layer on which the pressure-sensitive adhesive layer is not laminated, It comprises a step C for attaching a dicing ring to the pressure-sensitive adhesive layer, and a step D for performing laser marking on the flip-chip type semiconductor back film after the step B and the step C.
  • a laser marking is performed to the film for flip chip type semiconductor back surfaces.
  • the semiconductor wafer and the flip chip type semiconductor back film are not separated. Therefore, once the semiconductor wafer is positioned, laser marking can be performed on all the semiconductor elements with the flip chip type semiconductor back film obtained from the semiconductor wafer with the flip chip type semiconductor back film. As a result, productivity can be improved as compared with the method of individually positioning the semiconductor elements with the flip chip type semiconductor back surface film after being singulated and performing laser marking.
  • Step C After attaching a dicing ring to the adhesive layer of the film for semiconductor back surface with an adhesive layer (after Step C), laser marking is performed on the film for flip chip type semiconductor back surface (Step D is performed). At the marking stage, a dicing ring is attached. Therefore, the flip chip type semiconductor back film can be securely fixed while maintaining the positional relationship with the semiconductor wafer, and the marking positioning accuracy during laser marking can be maintained high.
  • a process E for attaching a dicing tape to the flip chip type semiconductor back film, and a process F for dicing the semiconductor wafer together with the flip chip type semiconductor back film to which laser marking has been applied are provided. It is preferable. Moreover, in the said structure, it is preferable to comprise the process G which peels from the dicing tape the semiconductor element with the film for flip chip type semiconductor back surfaces separated by the dicing. Thereby, the semiconductor element with the film for flip chip type semiconductor back surfaces to which the laser marking was given can be obtained.
  • the said structure WHEREIN The said film for semiconductor back surfaces with an adhesive layer is provided with the peeling layer in the surface at the side of the said film for flip chip type semiconductor back surfaces, and peels the said peeling layer after the said process B and the said process C. It is preferable to perform the step D after the step X. Since the step X is provided and laser marking is performed on the flip chip type semiconductor back film after the step X (step D is performed), laser light is not scattered on the release layer 12. Therefore, it is possible to perform highly accurate laser marking.
  • FIG. 1 It is a perspective view which shows typically an example of the film for semiconductor back surfaces with an adhesive layer which concerns on this embodiment. It is a fragmentary sectional view of the film for semiconductor back surfaces with an adhesive layer shown in FIG. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for
  • FIG. 1 is a perspective view schematically showing an example of a film for a semiconductor back surface with an adhesive layer according to this embodiment
  • FIG. 2 is a partial cross-sectional view thereof.
  • parts unnecessary for explanation are omitted, and there are parts shown enlarged or reduced for easy explanation.
  • a film 10 for a semiconductor back surface with an adhesive layer is a long release layer 12 and a circular flip chip type semiconductor back film provided on the release layer 12 in a plan view.
  • film for semiconductor back surface a film 14 for semiconductor back surface
  • the flip chip type semiconductor back film 14 has a diameter equal to or larger than the outer diameter of the dicing ring 22 to be attached (see FIG. 3), and is laminated on the release layer 12 with a certain interval.
  • the pressure-sensitive adhesive layer 16 has a shape corresponding to the dicing ring 22 (see FIG.
  • the film 10 for semiconductor back surfaces with an adhesive layer has the cover liner 18 (not shown in FIG. 1) of the shape corresponding to the peeling layer 12 on the film 14 for flip chip type semiconductor back surfaces and the adhesive layer 16. Are stacked.
  • the cover liner 18 protects the conductor back film 14 and the pressure-sensitive adhesive layer 16 until the semiconductor wafer 20 and the dicing ring 22 are attached.
  • the film for semiconductor back surfaces with an adhesive layer of this invention does not need to be provided with the cover liner 18.
  • FIG. Moreover, the shape of a peeling layer is not specifically limited, You may have a shape equivalent to the film for semiconductor back surfaces.
  • the film for semiconductor back surface of this invention should just be larger than the outer diameter of the semiconductor wafer affixed, and may be smaller than the outer diameter of the dicing ring affixed. In this case, the film for semiconductor back surface and the ring-shaped pressure-sensitive adhesive layer are laminated on the release layer in such a manner that they do not overlap each other.
  • the semiconductor back surface film 14 has a film form.
  • the film for semiconductor back surface 14 is in an uncured state (including a semi-cured state), and is thermally cured after being attached to a semiconductor wafer.
  • the film for semiconductor back surface is preferably formed of at least a thermosetting resin, and more preferably formed of at least a thermosetting resin and a thermoplastic resin. By forming it with at least a thermosetting resin, the film for semiconductor back surface can effectively exhibit the function as an adhesive layer.
  • thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin.
  • a thermoplastic resin can be used individually or in combination of 2 or more types. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.
  • the acrylic resin is not particularly limited, and is linear or branched having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms). And polymers having one or more esters of acrylic acid or methacrylic acid having an alkyl group as a component. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin.
  • alkyl group examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a 2-ethylhexyl group.
  • Octyl group isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.
  • the other monomer for forming the acrylic resin is not particularly limited.
  • acrylic acid Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid-containing monomer, such as maleic anhydride or itaconic anhydride, etc.
  • thermosetting resin examples include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin.
  • a thermosetting resin can be used individually or in combination of 2 or more types.
  • an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable.
  • a phenol resin can be used suitably as a hardening
  • the epoxy resin is not particularly limited.
  • bisphenol A type epoxy resin bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy.
  • Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin
  • Epoxy such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used fat.
  • epoxy resin among the above examples, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
  • the phenol resin acts as a curing agent for the epoxy resin.
  • examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene.
  • a phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.
  • the mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalents to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.
  • the content of the thermosetting resin is preferably 5% by weight or more and 90% by weight or less, and more preferably 10% by weight or more and 85% by weight or less, based on all resin components in the film for semiconductor back surface. More preferably, it is 15 wt% or more and 80 wt% or less.
  • the thermosetting shrinkage can be suppressed.
  • the sealing resin is thermally cured, the film for the semiconductor back surface can be sufficiently thermoset, and the flip chip type semiconductor device without peeling can be manufactured by securely bonding and fixing to the back surface of the semiconductor element. It becomes possible.
  • the warpage of the package PKG: flip chip type semiconductor device
  • the warpage of the package can be suppressed by making the content 90% by weight or less.
  • thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts.
  • stimulation catalyst can be used individually or in combination of 2 or more types.
  • thermosetting acceleration catalyst for example, an amine curing acceleration catalyst, a phosphorus curing acceleration catalyst, an imidazole curing acceleration catalyst, a boron curing acceleration catalyst, a phosphorus-boron curing acceleration catalyst, or the like can be used.
  • the amine-based curing accelerator (amine-based curing acceleration catalyst) is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like. .
  • the phosphorus curing accelerator is not particularly limited, and examples thereof include triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, and diphenyltolylphosphine.
  • Triorganophosphine such as fin, tetraphenylphosphonium bromide (trade name: TPP-PB), methyltriphenylphosphonium (trade name: TPP-MB), methyltriphenylphosphonium chloride (trade name: TPP-MC), methoxymethyl Examples include triphenylphosphonium (trade name: TPP-MOC), benzyltriphenylphosphonium chloride (trade name: TPP-ZC), and the like (all manufactured by Hokuko Chemical Co., Ltd.).
  • the triphenylphosphine compound is preferably substantially insoluble in the epoxy resin. It can suppress that hardening progresses at the time of a preservation
  • thermosetting catalyst having a triphenylphosphine structure and substantially insoluble in an epoxy resin examples include methyltriphenylphosphonium (trade name: TPP-MB).
  • TPP-MB methyltriphenylphosphonium
  • the “insoluble” means that the thermosetting catalyst made of a triphenylphosphine compound is insoluble in a solvent made of an epoxy resin, and more specifically, a temperature range of 10 to 40 ° C. It means that 10% by weight or more does not dissolve.
  • imidazole curing accelerator examples include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z), and 2-heptadecylimidazole (trade name; C17Z), 1-2-dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4- Methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name) 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name) C11Z-CN), 1-
  • the boron-based curing accelerator (boron-based curing acceleration catalyst) is not particularly limited, and examples thereof include trichloroborane.
  • the phosphorus-boron curing accelerator (phosphorus-boron curing accelerator catalyst) is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate ( (Trade name: TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S), etc. (all are Hokuko Chemical Co., Ltd.) Made).
  • TPP-K tetraphenylphosphonium tetraphenylborate
  • TPP-MK tetraphenylphosphonium tetra-p-triborate
  • TPP-ZK benzyltriphenylphosphonium tetraphenylborate
  • TPP-S triphenylphosphin
  • the ratio of the thermosetting acceleration catalyst is preferably 0.01 to 0.25% by weight with respect to the total amount of the resin component.
  • a thermosetting resin can be suitably thermosetted as the said ratio of a thermosetting acceleration
  • the film for the semiconductor back surface may be a single layer or a laminated film in which a plurality of layers are laminated, but when the film for the semiconductor back surface is a laminated film, the ratio of the thermosetting acceleration catalyst is the laminated film.
  • the total amount may be 0.01 to 0.25% by weight based on the total amount of the resin components.
  • the semiconductor back film is preferably formed of a resin composition containing an epoxy resin and a phenol resin, or a resin composition containing an epoxy resin, a phenol resin and an acrylic resin. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured.
  • the film for semiconductor back surface 14 has adhesion (adhesion) to the back surface (circuit non-formed surface) of the semiconductor wafer.
  • the film for semiconductor back surface 14 can be formed of, for example, a resin composition containing an epoxy resin as a thermosetting resin. Since the film for semiconductor back surface 14 is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.
  • the adhesive strength of the film for semiconductor back surface to the semiconductor wafer (23 ° C., peeling angle 180 °, peeling speed 300 mm / min) is preferably in the range of 0.5 N / 20 mm to 15 N / 20 mm, and 0.7 N / 20 mm to 10 N / 20 mm. The range of is more preferable.
  • By setting it to 0.5 N / 20 mm or more it is stuck to a semiconductor wafer or a semiconductor element with excellent adhesion, and the occurrence of floating or the like can be prevented. Further, it is possible to prevent the occurrence of chip jumping during dicing of the semiconductor wafer.
  • 15 N / 20 mm or less it can be easily peeled from the dicing tape.
  • the crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent.
  • the crosslinking agent an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable.
  • the said crosslinking agent can be used individually or in combination of 2 or more types.
  • isocyanate-based crosslinking agent examples include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and trimethylolpropane / tolylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd.
  • epoxy crosslinking agent examples include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, a
  • the usage-amount of a crosslinking agent in particular is not restrict
  • the amount of the crosslinking agent used is, for example, usually 7 parts by weight or less (for example, 0.05 parts by weight) with respect to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain end). To 7 parts by weight).
  • the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive force is lowered, which is not preferable.
  • the amount of crosslinking agent used is preferably 0.05 parts by weight or more with respect to 100 parts by weight of the polymer component.
  • the semiconductor back film is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained.
  • the colored film for semiconductor back surface has excellent marking properties
  • the film for semiconductor back surface is applied to the surface of the semiconductor element or the non-circuit surface side of the semiconductor device using the semiconductor element.
  • various information such as character information and graphic information can be given.
  • by controlling the coloring color it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility.
  • the film for semiconductor back surface is colored, it can distinguish easily from a cover liner etc., and workability
  • the color exhibited by coloring is not particularly limited, but is preferably a dark color such as black, blue, red, etc., particularly black It is preferable that
  • the dark basically, L * a * b * L * is defined by a color system, 60 or less (0 to 60) [preferably 50 or less (0 to 50) More preferably, it means a dark color of 40 or less (0 to 40)].
  • L * a * b * L * defined by the color system is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a blackish color which is (0 to 25) below.
  • a * and b * defined in the L * a * b * color system can be appropriately selected according to the value of L * .
  • a * and b * for example, both are preferably ⁇ 10 to 10, more preferably ⁇ 5 to 5, particularly in the range of ⁇ 3 to 3 (in particular, 0 or almost 0). Is preferred.
  • L * , a * , and b * defined in the L * a * b * color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated
  • the L * a * b * color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L * a * b * ) color system. It means that.
  • the L * a * b * color system is defined in JIS Z 8729 in the Japanese Industrial Standard.
  • a coloring material can be used according to the target color.
  • a color material various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable.
  • the color material any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more.
  • the dye any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used.
  • the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.
  • the dye when a dye is used as a coloring material, the dye is dissolved or uniformly dispersed in the semiconductor back film, so that the film for semiconductor back (and hence dicing tape) having a uniform or almost uniform coloring density is obtained.
  • Integrated film for semiconductor back surface can be easily manufactured. Therefore, when a dye is used as the coloring material, the film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface can make the coloring density uniform or almost uniform, and can improve the marking property and appearance.
  • the black color material is not particularly limited, and can be appropriately selected from, for example, inorganic black pigments and black dyes.
  • a black color material a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be.
  • Black color materials can be used alone or in combination of two or more.
  • the black color material can be used in combination with a color material other than black.
  • the black color material for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.
  • black color material C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C.
  • Black dyes such as Disperse Black 1, 3, 10, and 24;
  • Black pigments such as CI Pigment Black 1 and 7 can also be used.
  • Examples of such a black color material include a product name “OilOBlack BY”, a product name “OilBlack BS”, a product name “OilBlack HBB”, a product name “Oil Black 803”, a product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.
  • color materials other than black color materials include cyan color materials, magenta color materials, and yellow color materials.
  • cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.
  • magenta dye examples include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.
  • magenta pigment examples include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc.
  • yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I.
  • Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more.
  • the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.
  • the coloring form is not particularly limited.
  • the film for semiconductor back surface may be a single layer film-like material to which a colorant is added. Further, it may be a laminated film in which at least a resin layer formed of a thermosetting resin and a colorant layer are laminated.
  • the film 14 for semiconductor back surfaces is a laminated film of a resin layer and a colorant layer
  • the film 14 for semiconductor back surface in a laminated form has a laminated form of resin layer / colorant layer / resin layer. It is preferable.
  • the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.
  • the semiconductor back film 14 can be appropriately mixed with other additives as necessary.
  • additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.
  • the filler may be either an inorganic filler or an organic filler, but an inorganic filler is preferred.
  • a filler such as an inorganic filler
  • the film 14 for semiconductor back surface may be conductive or non-conductive.
  • the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead.
  • a filler can be used individually or in combination of 2 or more types. Among them, silica, particularly fused silica is suitable as the filler.
  • the average particle size of the inorganic filler is preferably in the range of 0.1 ⁇ m to 80 ⁇ m. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.
  • the blending amount of the filler is preferably 80 parts by weight or less (0 to 80 parts by weight), particularly 0 to 70 parts by weight with respect to 100 parts by weight of the organic resin component. It is preferable that
  • examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like.
  • a flame retardant can be used individually or in combination of 2 or more types.
  • examples of the silane coupling agent include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and the like.
  • a silane coupling agent can be used individually or in combination of 2 or more types.
  • examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.
  • the film for semiconductor back surface 14 is a resin composition obtained by mixing, for example, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as an acrylic resin as necessary, and a solvent or other additives as necessary. It can be formed using conventional methods of preparing the product and forming it into a film-like layer. Specifically, for example, the resin composition is applied onto the release layer 12, or the resin composition is applied onto an appropriate separator (such as release paper) to form a resin layer (or adhesive layer). And the film-like layer (adhesive layer) as a film for semiconductor back surfaces can be formed by the method etc. which transfer (transfer) this on the peeling layer 12.
  • the resin composition may be a solution or a dispersion.
  • the film 14 for semiconductor back surfaces is formed with the resin composition containing thermosetting resins, such as an epoxy resin
  • the film for semiconductor back surfaces is a thermosetting resin in the step before applying to a semiconductor wafer. It is an uncured or partially cured state. In this case, after being applied to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding process), the thermosetting resin in the film for semiconductor back surface is completely or almost completely cured. .
  • the gel fraction of the film for semiconductor back surface is particularly limited. However, it can be appropriately selected from the range of, for example, 50% by weight or less (0% by weight to 50% by weight), preferably 30% by weight or less (0% by weight to 30% by weight), particularly 10% by weight. The following (0 to 10% by weight) is preferable.
  • the measuring method of the gel fraction of the film for semiconductor back surface can be measured by the following measuring method. ⁇ Method for measuring gel fraction> About 0.1 g from the film for semiconductor back surface is sampled and weighed accurately (weight of the sample).
  • the gel fraction of the film for semiconductor back surface can be controlled by the heating temperature and the heating time in addition to the type and content of the resin component, the type and content of the crosslinking agent.
  • the film for semiconductor back surface is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.
  • the film for the semiconductor back surface may absorb moisture, resulting in a moisture content higher than that in the normal state. If flip-chip bonding is performed with such a high water content, water vapor may accumulate at the bonding interface between the semiconductor back surface film 14 and the semiconductor wafer or its processed body (semiconductor), which may cause floating. Therefore, as a film for semiconductor back surface, by providing a core material with high moisture permeability on both sides, water vapor diffuses and this problem can be avoided. From such a viewpoint, a multilayer structure in which the film 14 for the semiconductor back surface is formed on one surface or both surfaces of the core material may be used as the film for the semiconductor back surface.
  • the core material examples include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.
  • the thickness of the film for semiconductor back surface 14 is not particularly limited, but can be appropriately selected from a range of about 2 ⁇ m to 200 ⁇ m, for example. Further, the thickness is preferably about 4 ⁇ m to 160 ⁇ m, more preferably about 6 ⁇ m to 100 ⁇ m, and particularly preferably about 10 ⁇ m to 80 ⁇ m.
  • the tensile storage elastic modulus at 23 ° C. in the uncured state of the film 14 for semiconductor back surface is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly 3 GPa or more. Is preferred.
  • the tensile storage elastic modulus is 1 GPa or more, the semiconductor chip is peeled from the adhesive layer 32 of the dicing tape together with the semiconductor back surface film 14, and then the semiconductor back surface film 14 is placed on the support, When transporting or the like, it is possible to effectively suppress or prevent the semiconductor back film from sticking to the support.
  • the said support body says the top tape in a carrier tape, a bottom tape, etc., for example.
  • the film 14 for semiconductor back surfaces is formed with the resin composition containing a thermosetting resin
  • the thermosetting resin is usually in an uncured or partially cured state as described above
  • the semiconductor back surface The elastic modulus at 23 ° C. of the film for use is usually the elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.
  • the film for semiconductor back surface 14 may be a single layer or a laminated film in which a plurality of layers are laminated.
  • the tensile storage elastic modulus at 23 ° C. in the uncured state is a laminated film. It may be in the range of 1 GPa or more (for example, 1 GPa to 50 GPa) as a whole.
  • the tensile storage modulus (23 ° C.) of the film for semiconductor back surface in the uncured state is the type of resin component (thermoplastic resin, thermosetting resin) and the content thereof, the type of filler such as silica filler, It can be controlled by its content.
  • the film 14 for semiconductor back surfaces is a laminated film by which the several layer was laminated
  • a laminated form composed of a mark layer can be exemplified.
  • other layers intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.
  • the wafer adhesive layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer.
  • the laser mark layer is a layer that exhibits excellent laser marking properties, and is a layer that is used when laser marking is performed on the back surface of a semiconductor chip.
  • the tensile storage elastic modulus was not laminated on the dicing tape 3, but an uncured semiconductor back film 14 was prepared, and a dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric was used.
  • the tension mode the sample width: 10 mm, the sample length: 22.5 mm, the sample thickness: 0.2 mm, the frequency: 1 Hz, the heating rate: 10 ° C./min, a predetermined temperature under a nitrogen atmosphere ( 23 ° C.) and the obtained tensile storage modulus was obtained.
  • the light transmittance (visible light transmittance) of visible light (wavelength: 400 nm to 800 nm) in the film 14 for semiconductor back surface is not particularly limited, but may be, for example, 20% or less (0% to 20%). It is preferably 10% or less (0% to 10%), particularly preferably 5% or less (0% to 5%). If the visible light transmittance of the semiconductor back surface film 14 is greater than 20%, the semiconductor element may be adversely affected by the passage of light.
  • the visible light transmittance (%) depends on the type and content of the resin component of the film for semiconductor back surface 14, the type and content of colorant (pigment, dye, etc.), the content of inorganic filler, and the like. Can be controlled.
  • the visible light transmittance (%) of the film for semiconductor back surface 14 can be measured as follows. That is, a single film 14 for a semiconductor back surface having a thickness (average thickness) of 20 ⁇ m is produced. Next, the film for semiconductor back surface 14 was irradiated with visible light having a wavelength of 400 nm to 800 nm [apparatus: visible light generator manufactured by Shimadzu Corporation (trade name “ABSORPTION SPECTRO PHOTOMETR”)] at a predetermined intensity and transmitted. Measure the intensity of visible light. Furthermore, the value of visible light transmittance can be obtained from the intensity change before and after the visible light passes through the film 14 for semiconductor back surface.
  • the visible light transmittance (%; wavelength: 20 ⁇ m) of the semiconductor back film 14 having a thickness of 20 ⁇ m is determined by the value of the visible light transmittance (%; wavelength: 400 nm to 800 nm) of the semiconductor back film 14 that is not 20 ⁇ m thick. 400 nm to 800 nm) can also be derived. Further, in the present invention, the visible light transmittance (%) in the case of the film 14 for semiconductor back surface having a thickness of 20 ⁇ m is obtained, but the film for semiconductor back surface according to the present invention is limited to a film having a thickness of 20 ⁇ m. is not.
  • the semiconductor back film 14 preferably has a lower moisture absorption rate.
  • the moisture absorption rate is preferably 1% by weight or less, more preferably 0.8% by weight or less.
  • the said moisture absorption is the value computed by the weight change before and behind leaving the film 14 for semiconductor back surfaces in the atmosphere of temperature 85 degreeC and relative humidity 85% RH for 168 hours.
  • the moisture absorption rate is under an atmosphere of a temperature of 85 ° C. and a relative humidity of 85% RH with respect to the film for semiconductor back surface after thermosetting. Means the value when left for 168 hours. Moreover, the said moisture absorption rate can be adjusted by changing the addition amount of an inorganic filler, for example.
  • the film for semiconductor back surface 14 has a smaller proportion of volatile matter.
  • the weight reduction rate (ratio of weight reduction amount) of the film 14 for semiconductor back surface after the heat treatment is preferably 1% by weight or less, and more preferably 0.8% by weight or less.
  • the conditions for the heat treatment are, for example, a heating temperature of 250 ° C. and a heating time of 1 hour.
  • the weight reduction rate can be adjusted, for example, by adding an inorganic substance that can reduce the generation of cracks during lead-free solder reflow.
  • the said weight reduction rate is the heating temperature 250 degreeC with respect to the film for semiconductor back surfaces after thermosetting, and heating time 1 hour. Means the value when heated under the conditions of
  • release layer 12 examples include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foil and metal plates; plastics such as plastic films and sheets. Base materials; rubber base materials such as rubber sheets; foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, or plastic films (or sheets) An appropriate thin leaf body such as a laminate of the above can be used.
  • a plastic substrate such as a plastic film or sheet can be suitably used as the substrate.
  • plastic material examples include olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- Copolymers containing ethylene as a monomer component such as (meth) acrylic acid copolymers and ethylene- (meth) acrylic acid ester (random, alternating) copolymers; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene -
  • examples of the material of the release layer 12 include polymers such as a crosslinked body of the resin.
  • the plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.
  • the release layer 12 can be used by appropriately selecting the same type or different types, and a blend of several types can be used as necessary. Further, the release layer 12 may be subjected to a release treatment so that the release layer 12 can be easily released after the semiconductor wafer 20 or the dicing ring 22 is attached to the back film 14.
  • the release layer 12 is provided with a vapor deposition layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the release layer 12 in order to impart an antistatic ability. be able to.
  • the release layer 12 may be a single layer or two or more types.
  • the thickness of the release layer 12 is not particularly limited, and can be appropriately selected according to strength, flexibility, purpose of use, and the like, for example, generally 1000 ⁇ m or less (for example, 1 ⁇ m to 1000 ⁇ m), preferably 10 ⁇ m to 500 ⁇ m, more preferably 20 ⁇ m to 300 ⁇ m, particularly about 30 ⁇ m to 200 ⁇ m, but is not limited thereto.
  • the release layer 12 contains various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.
  • the adhesive layer 16 is formed of an adhesive and has adhesiveness.
  • an adhesive is not particularly limited, and can be appropriately selected from known adhesives.
  • examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C.
  • a pressure sensitive adhesive a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used.
  • An adhesive can be used individually or in combination of 2 or more types.
  • an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be preferably used, and an acrylic pressure-sensitive adhesive is particularly preferable.
  • an acrylic adhesive an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.
  • Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic.
  • the (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having an alkyl group having 4 to 18 carbon atoms.
  • the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.
  • the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification
  • a unit corresponding to the copolymerizable monomer component may be included.
  • copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid.
  • Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenes
  • Succinimide monomers such as N-imide
  • glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol
  • Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .
  • a radiation curable pressure sensitive adhesive or energy beam curable pressure sensitive adhesive
  • examples of the radiation curable pressure sensitive adhesive include a radical reactive carbon-carbon double bond having a polymer side chain or main chain.
  • Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done.
  • the heat-expandable adhesive as an adhesive
  • the heat-expandable adhesive containing an adhesive and a foaming agent especially heat-expandable microsphere
  • the pressure-sensitive adhesive layer 16 has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).
  • additives for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).
  • the crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred.
  • a crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict
  • isocyanate-based crosslinking agent examples include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and trimethylolpropane / tolylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd.
  • epoxy crosslinking agent examples include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, a
  • a cross-linking agent instead of using a cross-linking agent or using a cross-linking agent, it is also possible to perform a cross-linking treatment by irradiation with an electron beam or ultraviolet rays. Further, instead of using a cross-linking agent, or using a cross-linking agent, it is also possible to perform a cross-linking treatment by heating.
  • the pressure-sensitive adhesive layer 16 is formed, for example, by using a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the film 14 for a semiconductor back surface, and applying the mixture onto an appropriate separator (such as release paper).
  • the pressure-sensitive adhesive layer 16 can be formed by a method of forming the pressure-sensitive adhesive layer 16 and transferring (transferring) the pressure-sensitive adhesive layer 16 onto the semiconductor back surface film 14.
  • the thickness of the pressure-sensitive adhesive layer 16 is not particularly limited, and is, for example, about 5 ⁇ m to 300 ⁇ m (preferably 5 ⁇ m to 200 ⁇ m, more preferably 5 ⁇ m to 100 ⁇ m, particularly preferably 7 ⁇ m to 50 ⁇ m). When the thickness of the pressure-sensitive adhesive layer 16 is within the above range, an appropriate adhesive force can be exhibited.
  • the pressure-sensitive adhesive layer 16 may be either a single layer or multiple layers.
  • the cover liner 18 is peeled off when the semiconductor wafer 20 and the dicing ring 22 are attached.
  • a plastic film polyethylene terephthalate or the like
  • paper whose surface is coated with a release agent such as polyethylene, polypropylene, a fluorine-based release agent, or a long-chain alkyl acrylate release agent can be used.
  • the cover liner 18 can be formed by a conventionally known method. Further, the thickness of the cover liner 18 is not particularly limited.
  • Thickness of the film 10 for the semiconductor back surface with the adhesive layer (when the cover liner 18 is provided, the release layer 12, the film 14 for the semiconductor back surface, the adhesive layer 16, the total thickness of the cover liner 18 and the cover liner 18 are provided. If not, the total thickness of the release layer 12, the semiconductor back film 14, and the pressure-sensitive adhesive layer 16 can be selected, for example, from the range of 8 ⁇ m to 1500 ⁇ m, preferably 20 ⁇ m to 850 ⁇ m (more preferably 31 ⁇ m). ⁇ 500 ⁇ m, particularly preferably 47 ⁇ m to 330 ⁇ m).
  • the release layer 12 can be formed by a conventionally known film forming method.
  • the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.
  • a forming material for forming the semiconductor back surface film 14 is applied on the release layer 12 and dried (in the case where heat curing is necessary, for example, the heat treatment is performed and the semiconductor is dried).
  • a back film 14 is formed.
  • the coating method include roll coating, screen coating, and gravure coating.
  • the film 14 for semiconductor back surface is peeled off. 12 may be transferred. Thereby, the film 14 for semiconductor back surfaces can be formed on the peeling layer 12.
  • the pressure-sensitive adhesive composition is applied onto release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (heat-crosslinked as necessary) to form a coating layer.
  • the adhesive layer 16 is formed on the semiconductor back surface film 14 by transferring the coating layer onto the semiconductor back surface film 14.
  • the pressure-sensitive adhesive layer 16 can also be formed on the semiconductor back surface film 14 by directly applying the pressure-sensitive adhesive composition on the semiconductor back surface film 14 and then drying it under predetermined conditions.
  • the pressure-sensitive adhesive layer 16 and the semiconductor back surface film 14 are punched out from the pressure-sensitive adhesive layer 16 side into a shape corresponding to the outer diameter of the dicing ring 22.
  • the release layer 12 is not punched out.
  • the punched adhesive layer 16 and the outer portion of the semiconductor back film 14 are peeled from the release layer 12.
  • the pressure-sensitive adhesive layer 16 is punched from the pressure-sensitive adhesive layer 16 side at a location corresponding to the inner diameter of the dicing ring 22. At this time, the semiconductor back film 14 is not punched out. Thereafter, the inner part of the punched adhesive layer 16 is peeled off.
  • the cover liner 18 produced by a conventionally known method can be laminated from the pressure-sensitive adhesive layer 16 side to obtain the film for semiconductor back surface 10 with the pressure-sensitive adhesive layer.
  • the manufacturing method of the film for semiconductor back surfaces with an adhesive layer of this invention is not limited to the method mentioned above,
  • the film for semiconductor back surfaces of the shape according to the outer diameter of a semiconductor wafer, and the shape of a dicing ring A ring-shaped pressure-sensitive adhesive layer may be separately manufactured and laminated.
  • the semiconductor wafer is not particularly limited as long as it is a known or commonly used semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials.
  • a silicon wafer can be suitably used as the semiconductor wafer.
  • FIGS. 3 to 8 are schematic cross-sectional views showing a method for manufacturing a semiconductor device using the film for semiconductor back surface with an adhesive layer according to this embodiment.
  • the method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using the film 10 for a semiconductor back surface with an adhesive layer. Specifically, on the flip chip type semiconductor back film 14 on which the adhesive layer 16 is not laminated, the process A for preparing the film 10 for the semiconductor back surface with the adhesive layer, and the adhesive layer 16 inside the adhesive layer 16; Step B for attaching the semiconductor wafer 20, Step C for attaching the dicing ring 22 to the adhesive layer 16, and Step D for performing laser marking on the flip-chip type semiconductor back film 14 after the Step B and Step C. And at least.
  • the film 10 for semiconductor back surfaces with an adhesive layer (refer FIG. 1, FIG. 2) is prepared.
  • the film 10 for semiconductor back surface with an adhesive layer can be manufactured with the manufacturing method of the film 10 for semiconductor back surfaces with an adhesive layer mentioned above.
  • the cover liner 18 provided on the film 14 for semiconductor back surface and the adhesive layer 16 of the film 10 for semiconductor back surface with the adhesive layer is peeled off, and as shown in FIG.
  • the semiconductor wafer 20 is affixed on the flip chip type semiconductor back film 14 on the inner side where the adhesive layer 16 is not laminated.
  • light for example, infrared rays
  • the film for semiconductor back surface 14 of the semiconductor back surface 14 is based on the location where the transmittance has changed.
  • the semiconductor wafer 20 is affixed on the flip-chip type semiconductor back film 14 on the inner side of the adhesive layer 16 where the adhesive layer 16 is not laminated.
  • the alignment can also be performed by an image recognition device.
  • the semiconductor back surface film 14 is in an uncured state (including a semi-cured state).
  • the semiconductor back film 14 is attached to the back surface of the semiconductor wafer 20.
  • the back surface of the semiconductor wafer 20 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface).
  • the sticking method is not specifically limited, the method by pressure bonding is preferable.
  • the crimping is usually performed while pressing with a pressing means such as a crimping roll.
  • the dicing ring 22 is pasted on the ring-shaped pressure-sensitive adhesive layer 16 corresponding to the dicing ring 22.
  • light for example, infrared rays
  • the position of the pressure-sensitive adhesive layer 16 is based on the location where the transmittance has changed.
  • the dicing ring 22 is pasted on the pressure-sensitive adhesive layer 16.
  • the alignment can also be performed by an image recognition device. Note that the order of step B and step C may be reversed.
  • Step X peeling layer peeling step
  • the peeling layer 12 is peeled from the film 14 for semiconductor back surface.
  • the dicing ring 22 is affixed to the film 14 for semiconductor back surface through the adhesive layer 16, it can prevent that a wrinkle etc. generate
  • Laser marking is performed on the film 14 for a semiconductor back surface by irradiating a laser beam 24.
  • Laser marking is performed on the surface opposite to the surface on which the semiconductor wafer 20 of the film 14 for semiconductor back surface is attached. Specifically, for example, light (for example, infrared rays) is irradiated in the vertical direction with respect to the film 10 for semiconductor back surface with the pressure-sensitive adhesive layer to be conveyed, and the film for semiconductor back surface 14 of the semiconductor back surface 14 is based on the location where the transmittance has changed. After detecting the position, laser marking is performed at a predetermined position based on the position. The alignment can also be performed by an image recognition device.
  • the semiconductor wafer 20 and the semiconductor back surface film 14 are not separated. Therefore, once the semiconductor wafer 20 and the semiconductor back surface film 14 are positioned, laser marking is performed on all the semiconductor chips 21 with the semiconductor back surface film 14 obtained from the semiconductor wafer 20 with the semiconductor back surface film 14. It can be carried out. As a result, productivity can be improved as compared with a method in which the semiconductor chip with the film for semiconductor back surface after being singulated is individually positioned and laser marking is performed. Further, after the dicing ring 22 is attached to the pressure-sensitive adhesive layer 16 (after step C), laser marking is performed on the semiconductor back surface film 14 (step D is performed). It is pasted.
  • the semiconductor back surface film 14 can be reliably fixed while maintaining the positional relationship with the semiconductor wafer, and the marking positioning accuracy during laser marking can be maintained high. Moreover, since laser marking is performed on the film 14 for semiconductor back surface after the peeling layer 12 is peeled (after the process X) (the process D is performed), the laser light is not scattered on the peeling layer 12. Therefore, it is possible to perform highly accurate laser marking.
  • a known laser marking apparatus can be used.
  • various lasers such as a gas laser, a solid laser, and a liquid laser can be used.
  • the gas laser is not particularly limited and a known gas laser can be used, but a carbon dioxide laser (CO 2 laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser). Etc.) are preferred.
  • the solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO 4 laser are preferable.
  • the dicing tape 3 is attached to the semiconductor back surface film 14.
  • a conventionally known one in which an adhesive layer 32 is laminated on a base material 31 can be used.
  • the material of the pressure-sensitive adhesive layer 32 is not particularly limited, but for example, the same material as that of the pressure-sensitive adhesive layer 16 can be used.
  • the laminated structure of a dicing tape it is not limited to a laminated structure like the dicing tape 3, A conventionally well-known thing can be used suitably.
  • the affixing is performed by using the surface opposite to the surface on which the semiconductor wafer 20 of the film 14 for semiconductor back surface is affixed and the adhesive layer 32 of the dicing tape 3 as the affixing surface.
  • the sticking method is not specifically limited, the method by pressure bonding is preferable.
  • the crimping is usually performed while pressing with a pressing means such as a crimping roll.
  • the semiconductor wafer 20 is diced together with the film for semiconductor back surface 14 on which laser marking has been applied.
  • the semiconductor wafer 20 is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip 21 is manufactured.
  • the dicing is performed from the circuit surface side of the semiconductor wafer 20 according to a conventional method.
  • a cutting method called full cut that cuts halfway through the base material 31 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used.
  • the semiconductor wafer 20 is bonded and fixed with excellent adhesion by the semiconductor back surface film 14, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 20 can be suppressed.
  • the film 14 for semiconductor back surfaces is formed with the resin composition containing an epoxy resin, even if it cut
  • the expanding can be performed using a conventionally known expanding apparatus.
  • the expanding device includes a donut-shaped outer ring that can push down the dicing tape 3 downwardly through the dicing ring 22 and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape 3.
  • the semiconductor chip 21 is picked up, and the semiconductor chip 21 is peeled off from the dicing tape 3 together with the semiconductor back surface film 14.
  • the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 21 from the base 31 side of the dicing tape 3 with a needle and picking up the pushed-up semiconductor chips 21 with a pick-up device may be mentioned. Note that the back surface of the picked-up semiconductor chip 21 is protected by the film 14 for semiconductor back surface.
  • the picked-up semiconductor chip 21 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 21 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 21 faces the adherend 6. Fix according to law. For example, the bump 51 formed on the circuit surface side of the semiconductor chip 21 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material.
  • a bonding conductive material solder or the like
  • a gap is formed between the semiconductor chip 21 and the adherend 6, and the gap distance is generally about 30 ⁇ m to 300 ⁇ m.
  • various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used.
  • the material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate.
  • the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.
  • the material of the bump or the conductive material is not particularly limited, and for example, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.
  • the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 21 and the conductive material on the surface of the adherend 6.
  • the temperature is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.).
  • the cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid.
  • the film 14 for semiconductor back surface has solvent resistance to the cleaning liquid, and it is preferable to use a film that does not substantially have solubility in these cleaning liquids. In this case, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and the cleaning liquid can be cleaned by a conventional method.
  • a sealing step for sealing the gap between the flip-chip bonded semiconductor chip 21 and the adherend 6 is performed.
  • the sealing step is performed using a sealing resin.
  • the sealing conditions at this time are not particularly limited.
  • the sealing resin is thermally cured by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.
  • the sealing resin and the film 14 for semiconductor back surfaces carry out shrinkage
  • the stress applied to the semiconductor chip 21 due to the curing shrinkage of the sealing resin can be offset or alleviated by the semiconductor backside film 14 being cured and shrunk.
  • the film 14 for semiconductor back surfaces can be thermoset completely or substantially completely, and it can be made to adhere to the back surface of a semiconductor element with the outstanding adhesiveness.
  • the film for semiconductor back surface 14 according to the present invention can be thermally cured together with the sealing material in the sealing step even in an uncured state, the film for semiconductor back surface 14 is thermally cured. There is no need to add a new process.
  • the sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable.
  • sealing resin the resin composition containing an epoxy resin etc. are mentioned, for example.
  • the epoxy resin include the epoxy resins exemplified above.
  • a thermosetting resin other than an epoxy resin such as a phenol resin
  • a thermoplastic resin may be included as a resin component. Good.
  • a phenol resin it can utilize also as a hardening
  • the semiconductor device manufactured using the film 10 for a semiconductor back surface with an adhesive layer is a semiconductor device mounted by a flip chip mounting method, it is thinner and smaller than a semiconductor device mounted by a die bonding mounting method. It has become a shape. For this reason, it can use suitably as various electronic devices and electronic components, or those materials and members.
  • a so-called “mobile phone” or “PHS” a so-called “mobile phone” or “PHS”
  • a small computer for example, a so-called “PDA” (personal digital assistant)
  • PDA personal digital assistant
  • Netbook a so-called “Netbook (trademark)”
  • wearable computer etc.
  • mobile phone and small electronic devices integrated with a computer
  • digital camera so-called “digital”
  • Mobile devices such as video cameras, small TVs, small game devices, small digital audio players, so-called “electronic notebooks”, so-called “electronic dictionaries”, so-called “electronic books” electronic device terminals, small digital-type watches, etc.
  • Type electronic devices may be an electronic device other than a mobile type (such as a setting type) (for example, a so-called “disc top PC”, a flat-screen TV, a recording / playback electronic device (hard disk recorder, DVD player, etc.), a projector, a micromachine, etc.) .
  • a mobile type such as a setting type
  • Examples of materials and members of electronic components or electronic devices / electronic components include so-called “CPU” members, members of various storage devices (so-called “memory”, hard disks, etc.), and the like.

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Abstract

L'objet de la présente invention consiste à proposer un procédé de fabrication de dispositifs semi-conducteurs offrant la possibilité de marquer efficacement au laser un film destiné à la surface arrière d'un semi-conducteur de puce à bosse. Un procédé de fabrication de dispositifs semi-conducteurs comprend une étape (A) permettant de préparer un film de surface arrière de semi-conducteur contenant une couche adhésive comportant un film de surface arrière de semi-conducteur de puce à bosse et une couche adhésive en forme d'anneau disposée autour de la périphérie du film de surface arrière de semi-conducteur de puce à bosse ; une étape (B) permettant de coller une tranche de semi-conducteur sur le film de surface arrière de semi-conducteur de puce à bosse dans une zone sur laquelle n'est pas disposée la couche adhésive et située davantage vers l'intérieur que la couche adhésive ; une étape (C) permettant de coller un anneau de découpe de puces sur la couche adhésive ; et une étape (D) permettant de marquer au laser le film de surface arrière de semi-conducteur de puce à bosse à la fin de l'étape (B) et de l'étape (C).
PCT/JP2012/051444 2011-01-27 2012-01-24 Procédé de fabrication de dispositifs semi-conducteurs WO2012102270A1 (fr)

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JP6405556B2 (ja) 2013-07-31 2018-10-17 リンテック株式会社 保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6210201B2 (ja) * 2013-08-19 2017-10-11 東洋紡株式会社 フレキシブル電子デバイスの製造方法
JP6096085B2 (ja) * 2013-08-30 2017-03-15 富士フイルム株式会社 積層体およびその応用
JP6188495B2 (ja) * 2013-08-30 2017-08-30 富士フイルム株式会社 積層体及びその応用
JP6235279B2 (ja) * 2013-09-18 2017-11-22 株式会社ディスコ ウエーハの加工方法
JP6147631B2 (ja) * 2013-09-26 2017-06-14 株式会社ディスコ 加工方法
CN105899631A (zh) 2014-01-08 2016-08-24 琳得科株式会社 保护膜形成用复合片
JP2017008255A (ja) 2015-06-25 2017-01-12 リンテック株式会社 保護膜形成用複合シート、保護膜付きチップ、及び保護膜付きチップの製造方法
JP6729050B2 (ja) * 2016-06-22 2020-07-22 住友ベークライト株式会社 半導体素子保護用粘着テープおよび半導体素子保護用粘着テープの製造方法
JP6401364B2 (ja) * 2017-10-12 2018-10-10 リンテック株式会社 保護膜形成用複合シートおよびレーザー印字方法

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JP2010199543A (ja) * 2009-01-30 2010-09-09 Nitto Denko Corp ダイシングテープ一体型ウエハ裏面保護フィルム

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