TW201246409A - Method for producing semiconductor devices - Google Patents

Method for producing semiconductor devices Download PDF

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Publication number
TW201246409A
TW201246409A TW101102727A TW101102727A TW201246409A TW 201246409 A TW201246409 A TW 201246409A TW 101102727 A TW101102727 A TW 101102727A TW 101102727 A TW101102727 A TW 101102727A TW 201246409 A TW201246409 A TW 201246409A
Authority
TW
Taiwan
Prior art keywords
film
back surface
semiconductor
resin
adhesive layer
Prior art date
Application number
TW101102727A
Other languages
Chinese (zh)
Other versions
TWI545664B (en
Inventor
Naohide Takamoto
Fumiteru Asai
Goji Shiga
Original Assignee
Nitto Denko Corp
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Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201246409A publication Critical patent/TW201246409A/en
Application granted granted Critical
Publication of TWI545664B publication Critical patent/TWI545664B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3164—Partial encapsulation or coating the coating being a foil
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Abstract

The purpose is to provide a method for producing semiconductor devices that makes it possible to efficiently laser-mark a film for the rear surface of a flip chip semiconductor. A method for producing semiconductor devices is provided with: a step (A) for preparing an adhesive layer-containing semiconductor rear surface film having a flip chip semiconductor rear surface film and a ring-shaped adhesive layer provided around the periphery of the flip chip semiconductor rear surface film; a step (B) for pasting a semiconductor wafer onto the flip chip semiconductor rear surface film in an area not having the adhesive layer layered thereon and more to the inside than the adhesive layer; a step (C) for pasting a dicing ring on the adhesive layer; and a step (D) for laser-marking the flip chip semiconductor rear surface film after completion of the step (B) and the step (C).

Description

201246409 六、發明說明： 【發明所屬之技術領域】 本發明係m種錢具有覆晶料導體背面賴與設 置於上述覆晶型半導體背面用膜之外周上之環狀黏著劑層 的附有黏著劑層之半導體背面用模之半導體裝置之製造方 法。覆晶型半導體背面用膜可用於半導體晶片等半導體元 件背面之保護或強度提高等。 【先前技術】 近年來，更進一步要求半導體I置及其封裝之薄型化、 小型化。因此，作為半導體裝置及其封裝，廣泛使用利用 覆晶接合將半導體晶片等半導體元件安裝（覆晶連接）於基 板上之覆晶型半導體裝置（例如參照專利文獻卜…）。該覆 晶連接係以半導體晶片之電路面與基板之電極形成面對向 之形態加以固定者。此種半導體裝置等有時利用保護膜保 護半導體晶片之背面而防止半導體晶片之損傷等。 有時將半導體晶片之識別編號等各種資訊（例如文字資 訊或圖形資訊）雷射標記於該保護膜上。先前，雷射標記 係於切割半導體晶圓而使其單片化為半導體元件後進行 (例如參照專利文獻11)。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2008-166451號公報 [專利文獻2]曰本專利特開2008-006386號公報 [專利文獻3]曰本專利特開2〇〇7_261〇35號公報 161814.doc 201246409 [專利文獻4]曰本專利特開2007-250970號公報 [專利文獻5]曰本專利特開2007-158026號公報 [專利文獻6]曰本專利特開2004-221 169號公報 [專利文獻7]曰本專利特開2004-214288號公報 [專利文獻8]曰本專利特開2004-142430號公報 [專利文獻9]曰本專利特開2004-072108號公報 [專利文獻10]曰本專利特開2004-063551號公報 [專利文獻11]日本專利特開2010-199543號公報 【發明内容】 [發明所欲解決之問題] 然而，若於切割半導體晶圓而使其單片化為半導體元件 後進行雷射標記’則必需對每個半導體元件進行用於雷射 標記之定位，就生產性之觀點而言有改善之餘地。 本發明係鑒於上述問題而完成者，其目的在於提供一種 可高效地對覆晶型半導體背面用膜進行雷射標記之半導體 裝置之製造方法。 [解決問題之技術機構] 本申明案發明者等人為了解決上述先前之問題而進行研 究，結果發現，藉由於附有黏著劑層之半導體背面用膜上 貼附半導體sa圓與切晶環後’對覆晶型半導體背面用膜進 行雷射標記，可高效地對覆晶型半導體背面用膜進行雷射 標記，從而完成本發明。 即，本發明之半導體裝置之製造方法之特徵在於具備如 下步驟.步驟A，其準備具有覆晶型半導體背面用膜、與 161814.doc 201246409 设置於上述覆晶型半導體背面用膜之外周上之環狀黏著劑 層的附有黏著劑層之半導體背面用膜；步驟B，其於較上 述黏著劑層更内側之未積層有上述黏著劑層之上述覆晶型 半導體背面用膜上貼附半導體晶圓；步驟c，其於上述黏 著劑層上貼附切晶環；及步驟D，其於上述步驟3及上述 步驟C後，對上述覆晶型半導體背面用膜進行雷射標記。 根據上述構成，於上述步驟B及上述步驟c後，對覆晶 型半導體背面用膜進行雷射標記。於終止上述步驟b及上 述步驟C後之I：白4又’半導體晶圓及覆晶型半導體背面用膜 並未單片化。因此，只要進行一次半導體晶圓之定位，則 可對於由該附有覆晶型半導體背面用膜之半導體晶圓所獲 付之全部附有覆晶型半導體背面用膜之半導體元件進行雷 射枯°己 ''纟σ果，與對單片化後之附有覆晶型半導體背面用 膜之半導體it件逐個地定位而進行雷射標記之方法相比， 可提高生產性。 又’由於在附有黏著劑層之半導體背面用膜之黏著劑層 上貼附切晶環後（步驟C後）對覆晶型半導體背面用膜進行 雷射私》己(進行步驟D)，故而於雷射標記之階段貼附有切 B曰環因此，可將覆晶型半導體背面用膜於維持與半導體 明圓之位置關係之狀態下確實地固定，可將雷射標記時之 標記定位之精度維持於較高。 於上述構成中’較佳為具備如下步驟：步驟E，其於上 述覆晶型半導體背面用膜上貼附切割膠帶；及步驟F，其 將上述半導體晶圓與實施雷射標記之覆晶型半導體背面用 161814.doc 201246409 膜—同切割。又，於上述構成令，較佳為具備步驟G，其 將藉由切割而單片化之附有覆晶型半導體背面用膜之半導 體几件自切割膠帶上剝離《藉此，可獲得附有實施雷射標 記之覆晶型半導體背面用膜之半導體元件。 於上述構成中，上述附有黏著劑層之半導體背面用膜較 佳為於上述覆晶型半導體背面用膜側之面上設置剝離層， 並具備於上述步驟Β及上述步驟c後剝離上述剝離層之步 驟X，且於上述步驟X後進行上述步驟D。由於具備上述步 驟X且於上述步驟X後對上述覆晶型半導體背面用膜進行 雷射標記（進行步驟D)，故而不存在雷射光散射至剝離層 1 2之情況。因此，可進行精度較高之雷射標記。 【實施方式】 針對本發明之實施形態，一面參照圖式一面進行說明， 但本發明不限定於該例。首先，針對本實施形態之附有黏 著劑層之半導體背面用膜進行說明。圖丨係模式性地表示 本實施形態之附有黏著劑層之半導體背面用膜之一例的立 體圖，圖2係其部分截面圖。再者，於圖中省略無需說明 之部分，且存在為了容易地進行說明而進行擴大或縮小等 並加以圖示之部分。 (附有黏著劑層之半導體背面用膜） 如圖1及圖2所示，附有黏著劑層之半導體背面用膜1〇具 備：長條之剝離層12、設置於剝離層12上之俯視時為圓形 之覆晶型半導體背面用膜（以下亦稱為「半導體背面用 膜」）14、及設置於半導體背面用膜14之外周上之環狀黏 161814.doc 201246409 著劑層16。覆晶型半導體背面用膜14係與所貼附之切晶環 22(參照圖3)之外徑相同或具有較其更大之直徑，並隔開一 定間隔而積層於剝離層12上。黏著劑層16係形成與所貼附 之切晶環22(參照圖3)對應之形狀。又，附有黏著劑層之半 導體背面用膜10係於覆晶型半導體背面用膜14及黏著劑層 16上積層有與剝離層12對應之形狀之覆蓋襯墊18(於圖 未圖不）^覆蓋襯墊18係於直至貼附半導體晶圓2〇或切晶 J哀22為止之期間保護半導體背面用膜14及黏著劑層16者。 再者，本發明之附有黏著劑層之半導體背面用膜亦可不 具備覆蓋襯墊1 8。又，剝離層之形狀並無特別限定，亦可 具有與半導體背面用膜相同之形狀。又，本發明之半導體 背面用膜只要大於所貼附之半導體晶圓之外徑即可，亦可 小於所貼附之切晶環之外徑。於該情形時，半導體背面用 膜與環狀黏著劑層係以未相互重疊之態樣積層於剝離層 上。 (覆晶型半導體背面用膜） 半導體背面用膜14具有膜狀之形態。半導體背面用膜14 為未硬化狀態（包括半硬化狀態），且於貼合至半導體晶圓 上後進行熱硬化。 上述半導體背面用膜較佳為藉由至少熱硬化性樹脂而形 成，進而更佳為藉由至少熱硬化性樹脂與熱塑性樹脂而形 成。藉由利用至少熱硬化性樹脂形成，可使半導體背面用 膜有效地發揮作為接著劑層之功能。 作為上述熱塑性樹脂，例如可列舉：天然橡膠、丁基橡 16I8l4.doc 201246409 膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共 聚物、乙烯_丙烯酸共聚物、乙烯—丙烯酸酯共聚物、聚丁 二烯樹脂、聚碳酸酯樹脂、熱塑性聚醢亞胺樹脂、6-尼龍 或6,6-尼龍等聚醯胺樹脂’苯氧樹脂、丙烯酸樹脂、 PET(P〇lyEthylene Terephthalate，聚對苯二曱酸乙二酯）或 PBT(P〇lyButylene Terephthalate，聚對苯二曱酸丁二酯）等 飽和聚酯樹脂，聚醯胺醯亞胺樹脂、或氟樹脂等。熱塑性 樹脂可單獨使用或併用2種以上。該等熱塑性樹脂中，尤 佳為離子性雜質較少且对熱性較高，可禮保半導體元件之 可靠性之丙烯酸樹脂。 作為上述丙烯酸樹脂’並無特別限定，可列舉以1種或2 種以上之具有碳數3 0以下（較佳為碳數4〜1 8，進而較佳為 碳數6〜10，尤佳為碳數8或9)之直鏈或分支烷基的丙烯酸 或曱基丙烯酸之酯作為成分之聚合物等。即，於本發明 中，所謂丙烯酸樹脂，意指亦包括甲基丙烯酸樹脂之廣 義。作為上述烷基，例如可列舉：甲基、乙基、丙基 '異 丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己 基、庚基、2-乙基己基、辛基、異辛基、壬基、異壬基、 癸基、異癸基、十一烷基 '十二烷基（月桂基）、十三烷 基、十四烷基、硬脂基、十八烷基等。 又，作為用以形成上述丙烯酸樹脂之其他單體（除烷基 之碳數為30以下之丙烯酸或甲基丙烯酸之烷基酯以外之單 體），並無特別限定，例如可列舉：丙稀酸、曱基丙烯 酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、順丁烯 161814.doc 201246409 二酸、反丁烯二酸或丁烯酸等各種含羧基單體；順丁烯二 酸酐或衣康酸酐等各種酸酐單體；（曱基）丙烯酸2-羥基乙 酯、（曱基）丙烯酸2-羥基丙酯、（甲基）丙烯酸4-羥基丁酯、 (曱基）丙烯酸6-羥基己酯、（曱基）丙烯酸8_羥基辛酯、（甲 基）丙烯酸10-羥基癸酯、（曱基）丙烯酸12_羥基月桂基酯或 甲基丙烯酸-(4-羥基曱基環己基）酯等各種含羥基單體；苯 乙烯磺酸、烯丙基磺酸、2-(甲基）丙烯醯胺_2_甲基丙磺 &L、（曱基）丙烯醯胺丙磺酸、（甲基）丙烯酸磺丙酯或（甲基） 丙烯醯氧基萘磺酸等各種含磺酸基單體；或磷酸2_羥基乙 基丙烯醯酯等各種含磷酸基單體等。再者，所謂（甲基）丙 燁酸，係指丙烯酸及/或曱基丙稀酸，與本發明之（甲基）為 完全相同之含義。 作為上述熱硬化性樹脂，除環氧樹脂、酚樹脂以 外可列舉.胺樹脂、不飽和聚醋樹脂 '聚胺基甲酸醋樹 脂、聚石夕氧樹脂、熱硬化性聚醯亞胺樹脂等。熱硬化性樹 月曰可早獨使用或併用2種以上。作為熱硬化性樹脂，尤佳 ^ 3有較少之腐財導體元件之離子性雜質等之環氧樹 脂i又^為環氧樹脂之硬化劑，可較佳地使用齡樹脂。 乂二二乳树脂，並無特別限定，例如可使用：雙紛八型 %氧树月曰、雙酚F型環氣满 M ( ㈣… 型環氧樹脂、漠化雙 樹r ^ 歧雙⑽型環氧樹脂、雙賴型環氧 聯苯型環氧樹脂、蔡型環氧樹脂、第型環氧樹月 本酚酚醛清漆型環氧榭 衣巩树月曰、 三羥基苯基甲甲酚酚醛清漆型環氧樹脂、 錢樹脂、四酚基乙烷型環氧樹脂等二 J618J4.doc 201246409 T能環氧樹脂或多官能環氧樹脂，或者乙内醯脲型環氧樹 月曰、二縮水甘油基異氰尿酸酯型環氧樹脂或縮水甘油胺型 環氧樹脂等環氧樹脂。 作為％氧樹脂，上述例示中，尤佳為酚醛清漆型環氧樹 月曰聯笨型環氧樹脂、三羥基苯基曱烷型環氧樹脂、四酚 基乙院型環氧樹脂。其原因在於：該等環氧樹脂與作為硬 化劑之紛樹脂富有反應性，耐熱性等優異。 進而，上述酚樹脂係用作上述環氧樹脂之硬化劑者，例 如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚 醛清漆樹脂、第三丁基笨酚酚醛清漆樹脂、壬基苯酚酚醛 清漆樹脂等酚醛清漆型酚樹脂；可溶酚醛型酚樹脂、聚對 羥基苯乙烯等聚羥基苯乙烯等。酚樹脂可單獨使用或併用 2種以上《該等酚樹脂中，尤佳為苯酚酚醛清漆樹脂、苯 酚芳烷基樹脂。其原因在於：可提高半導體裝置之連接可 靠性。 環氧樹脂與酚樹脂之調配比例例如較佳為以上述環氧樹 月曰成分中之每1當量環氧基，酚樹脂中之羥基成為〇 5當量 〜2.0當量之方式調配。更佳為〇·8當量〜12當量。即，其原 因在於：若兩者之調配比例脫離上述範圍，則不會進行充 分之硬化反應，環氧樹脂硬化物之特性變得易劣化。 作為上述熱硬化性樹脂之含量，相對於半導體背面用膜 中之總樹脂成分，較佳為5重量％以上且9〇重量％以下，更 佳為10重量。/。以上且85重量％以下，進而較佳為15重量％ 以上且80重量％以下。藉由將上述含量設為5重量％以上， 16I814.doc 201246409 可抑制熱硬化收縮量。又，於使密封樹脂熱硬化時，可使 半導體背面用膜充分地熱硬化而確實地接著固定於半導體 元件之背面，可製造無剝離之覆晶型半導體裝置。另一方 面，藉由將上述含量設為90重量％以下，可抑制封裝 (PKG(Package ’封裝）：覆晶型半導體裝置）之翹曲。 作為環氧樹脂與酚樹脂之熱硬化促進觸媒，並無特別限 制，可自公知之熱硬化促進觸媒中適當地選擇使用。熱硬 化促進觸媒可單獨使帛或組合2種以±❹。作為熱硬化 促進觸媒，例如可使用：胺系硬化促進觸媒、鱗系硬化促 進觸媒、咪唾系硬化促進觸媒、㈣系硬化促進觸媒、破_ 硼系硬化促進觸媒等。 作為上述胺系硬化促進劑（胺系硬化促進觸媒），並無特 別限定，例如可列舉：單乙醇胺三氟硼酸§旨（8秦 Chemifa股份公司製造）、二氰基二醯胺(Ν_丨“ Τα-股 份公司製造）等。 作為上述碟系硬化促進劑（峨系硬化促進觸媒），並無特 別限定’例如可列舉：三苯基膦、三丁基膦、三（對甲基 苯基）膦、三（壬基苯基）膦、二苯基甲苯基膦等三有機膦； 演化四苯基鱗（商品名；TPP_PB)、漠化甲基三苯基鱗（商 品名；TPP-MB)、氣化甲基三苯基鱗（商品名；τρρ·Μ〇、 氯化甲氧基甲基三苯基鱗（商品名；Tpp_M〇c)、氣化节基 三苯基鱗（商品名；TPP_ZC)等（均為北興化學股份公司製 以）又作為上述二苯基膦系化合物，較佳為對於環氧 樹脂實質上顯Μ溶解性者。若料環氧_為非溶解 161814.doc 201246409 性，則可於保存時抑制硬化進行。作為具有 且對環氧樹脂實質上顯示非溶解性之熱硬化觸媒，例= 例不甲基二苯基鱗（商品名；ΤΡΡ·ΜΒ)等。再者，所謂上述 「非溶解性」，意指包含三笨基膦系化合物之熱硬化觸媒 對於包含環氧樹脂之溶劑為不溶性，更詳細而t，意指於 皿度1 〇〜4 0 C之範圍内不會溶解1 〇重量％以上。 作為上述咪唑系硬化促進劑（咪唑系硬化促進觸媒），可 列舉：2_曱基口米。坐（商品名；2MZ)、2_十—烧基味唾（商品 名；Cll-ζ)、2-十七烷基咪唑（商品名；C17z)、U•二曱 基咪唑（商品名；iJDMZ)、2-乙基_4_曱基咪唑（商品名； 2E4MZ)、2-苯基咪唑（商品名；2pz)、2_苯基_4_甲基咪唑 (商品名；2P4MZ)、1-苄基_2·曱基咪唑（商品名； 1B2MZ)、1-苄基-2-苯基咪唑（商品名；1B2pZ)、丨·氰乙基_ 2-甲基味唾（商品名；2MZ-CN)、1·氰乙基_2_十一燒基哺 唑（商品名；C11Z-CN)、1-氰乙基_2·苯基咪唑鏽偏笨三酸 (商品名；2PZCNS-PW)、2,4-二胺基-6-[2，-甲基咪哇基_ (1)] -乙基-均二11井（商品名；2MZ-A)、2,4-二胺基_6-[2，_十 一烷基咪唑基-(Γ)]-乙基-均三啫（商品名；Cliz-A)、2,4-二胺基-6-[2’-乙基-4’-甲基咪β坐基乙基·均三_ (商品 名；2Ε4ΜΖ-Α)、2,4-二胺基-6-[2’-曱基。米。坐基 _(ι，)]_ 乙基_ 均三畊異三聚氰酸加成物（商品名；2ΜΑ-ΟΚ)、2-苯基-4,5-二羥基曱基咪唑（商品名；2PHZ-PW)、2-苯基_4_曱基_ 5-羥基甲基咪唑（商品名；2P4MHZ-PW)等（均為四國化成 工業股份公司製造）。 161814.doc •12· 201246409 作為上述硼系硬化促進劑（硼系硬化促進觸媒），並無特 別限定，例如可列舉三氣硼烷等。 作為上述磷-硼系硬化促進劑（磷-硼系硬化促進觸媒）， 並無特別限定，例如可列舉：四苯基鱗四苯基硼酸酯（商 品名；TPP-K)、四苯基鱗四_對三硼酸酯（商品名；τρρ· ΜΚ)、~基二本基鱗四苯基硼酸酿（商品名；τρρ·ζκ)、三 苯基膦三苯基硼烷（商品名；TPP_S)等（均為北興化學股份 公司製造）。 上述熱硬化促進觸媒之比例相對於樹脂成分之總量，較 佳為0.01〜0.25重量％。若熱硬化促進觸媒之上述比例為 0.01重；ϊ%以上，則可較佳地使熱硬化性樹脂熱硬化。 此處， 層之積層 半導體背面用膜可為單層，亦可為積層有複數個 之總莖為0.01〜〇. 2 5重量％即可 層之積層冑’於半導體背面用膜為積層膜之情形時，熱硬 化促進觸媒之上述比例只要相對於積層膜總體之樹脂成分 ’較佳為藉由含有環氧樹脂及201246409 VI. Description of the Invention: [Technical Field] The present invention relates to an adhesive having a back surface of a flip-chip conductor and an annular adhesive layer provided on the outer periphery of the film for the back surface of the flip-chip semiconductor. A method of manufacturing a semiconductor device using a semiconductor back surface of a layer. The film for flip chip type semiconductor back surface can be used for protection or strength improvement of the back surface of a semiconductor element such as a semiconductor wafer. [Prior Art] In recent years, the semiconductor I and its package have been required to be thinner and smaller. Therefore, as a semiconductor device and a package thereof, a flip-chip type semiconductor device in which a semiconductor element such as a semiconductor wafer is mounted on a substrate by flip chip bonding is widely used (for example, see Patent Document). The flip-chip connection is performed in such a manner that the circuit surface of the semiconductor wafer and the electrode of the substrate face each other. Such a semiconductor device or the like may protect the back surface of the semiconductor wafer with a protective film to prevent damage of the semiconductor wafer or the like. Various kinds of information (such as text information or graphic information) such as the identification number of the semiconductor wafer are sometimes laser-marked on the protective film. Conventionally, the laser marking is performed after dicing a semiconductor wafer and singulating it into a semiconductor element (see, for example, Patent Document 11). [Prior Art Document] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-166451 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-006386 (Patent Document 3) Japanese Patent Laid-Open No. 2007-250970 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2007-158026 (Patent Document 6) [Patent Document 7] [Patent Document 7] Japanese Patent Laid-Open Publication No. 2004-214288 [Patent Document 8] Japanese Patent Laid-Open Publication No. 2004-142430 [Patent Document 9] Japanese Patent Laid-Open No. 2004-072108 [Patent Document 10] Japanese Laid-Open Patent Publication No. 2004-063551 [Patent Document 11] Japanese Patent Laid-Open Publication No. 2010-199543 [Draft of the Invention] [Problems to be Solved by the Invention] However, if the semiconductor wafer is diced On the other hand, it is necessary to carry out laser marking for each semiconductor element after it is singulated into a semiconductor element, and there is room for improvement in terms of productivity. The present invention has been made in view of the above problems, and an object thereof is to provide a method of manufacturing a semiconductor device capable of efficiently performing laser marking on a film for a flip chip type semiconductor back surface. [Technical Organization for Solving the Problems] The inventors of the present invention conducted research in order to solve the above-mentioned problems, and as a result, found that the semiconductor sa round and the dicing ring were attached to the film for semiconductor back surface with the adhesive layer attached thereto. 'Laser marking of the film for flip chip type semiconductor back surface enables laser marking of the film for flip chip type semiconductor back surface efficiently, and the present invention has been completed. In other words, the method of manufacturing a semiconductor device of the present invention includes the following steps: Step A, which is provided with a film for a flip chip type semiconductor back surface, and 161814.doc 201246409 is provided on the outer periphery of the film for the flip chip type semiconductor back surface. a film for a semiconductor back surface with an adhesive layer attached to the annular adhesive layer; and a step B of attaching a semiconductor to the film for a back surface of the flip chip type semiconductor having an adhesive layer on the inner side of the adhesive layer a wafer; a step c, wherein the dicing ring is attached to the adhesive layer; and a step D, after the step 3 and the step C, laser-marking the film for the flip-chip semiconductor back surface. According to the above configuration, after the above step B and the step c, the film for the flip chip type semiconductor back surface is laser-marked. After the termination of the above step b and the above step C, the film of the semiconductor wafer and the flip chip type semiconductor back surface is not singulated. Therefore, as long as the positioning of the semiconductor wafer is performed once, the semiconductor element having the film for the flip chip type semiconductor back surface which is obtained by the semiconductor wafer with the film for the flip chip type semiconductor back surface can be subjected to laser irradiation. The productivity of the film can be improved as compared with the method of performing laser marking on the semiconductor insulative film of the film for the backside of the flip-chip type semiconductor after singulation. Further, since the dicing ring is attached to the adhesive layer of the film for semiconductor back surface to which the adhesive layer is attached (after step C), the film for the back surface of the flip chip type semiconductor is subjected to laser irradiation (step D). Therefore, the B-ring is attached to the laser marking stage, so that the film for the flip-chip semiconductor back surface can be surely fixed while maintaining the positional relationship with the semiconductor bright circle, and the mark of the laser marking can be positioned. The accuracy is maintained at a high level. In the above configuration, it is preferable to provide a step of attaching a dicing tape to the film for a flip-chip semiconductor back surface, and a step F of coating the semiconductor wafer with a flip chip for performing laser marking. The back of the semiconductor is used for 161814.doc 201246409 film - the same cutting. Further, in the above configuration, it is preferable to provide a step G in which a plurality of semiconductors having a film for flip chip type semiconductor back surface which are diced by dicing are peeled off from the dicing tape, thereby obtaining A semiconductor element of a film for flip chip type semiconductor back surface on which laser marking is applied. In the above-described configuration, it is preferable that the film for semiconductor back surface with the adhesive layer is provided with a release layer on the surface of the film-forming semiconductor back surface film side, and the peeling layer is provided after the step Β and the step c, and the peeling is performed. Step X of the layer, and after the above step X, the above step D is performed. Since the above-described step X is provided and the film for the flip chip type semiconductor back surface is subjected to laser marking after step X (step D), there is no case where laser light is scattered to the peeling layer 1 2 . Therefore, laser markings with higher precision can be performed. [Embodiment] The embodiment of the present invention will be described with reference to the drawings, but the present invention is not limited to this example. First, a film for a semiconductor back surface with an adhesive layer according to this embodiment will be described. Fig. 2 is a perspective view schematically showing an example of a film for semiconductor back surface with an adhesive layer according to the embodiment, and Fig. 2 is a partial cross-sectional view thereof. In addition, in the drawings, portions that are not described are omitted, and portions that are enlarged or reduced for easy explanation are shown. (Semiconductor Back Surface Film with Adhesive Layer) As shown in FIG. 1 and FIG. 2, the film for semiconductor back surface 1B with an adhesive layer is provided with a long peeling layer 12 and a plan view provided on the peeling layer 12. In the case of a circular flip chip type semiconductor back surface film (hereinafter also referred to as "semiconductor back surface film") 14, and a ring-shaped adhesive 161814.doc 201246409, a primer layer 16 provided on the outer periphery of the semiconductor back surface film 14. The film 14 for flip chip type semiconductor back surface is the same as or larger than the outer diameter of the attached dicing ring 22 (see Fig. 3), and is laminated on the peeling layer 12 at a predetermined interval. The adhesive layer 16 is formed in a shape corresponding to the attached dicing ring 22 (see Fig. 3). Further, the film 10 for semiconductor back surface to which the adhesive layer is applied is a cover pad 18 having a shape corresponding to the peeling layer 12 laminated on the flip chip 14 and the adhesive layer 16 (not shown). The cover liner 18 is used to protect the semiconductor back surface film 14 and the adhesive layer 16 until the semiconductor wafer 2 is bonded or the dicing is performed. Further, the film for semiconductor back surface to which the adhesive layer of the present invention is attached may not have the cover liner 18. Further, the shape of the release layer is not particularly limited, and may have the same shape as that of the film for semiconductor back surface. Further, the film for semiconductor back surface of the present invention may be larger than the outer diameter of the attached semiconductor wafer, or may be smaller than the outer diameter of the attached dicing ring. In this case, the film for semiconductor back surface and the annular adhesive layer are laminated on the release layer in such a manner that they do not overlap each other. (film for flip chip type semiconductor back surface) The film 14 for semiconductor back surface has a film form. The film 14 for semiconductor back surface is in an uncured state (including a semi-hardened state), and is thermally cured after being bonded to a semiconductor wafer. The film for semiconductor back surface is preferably formed of at least a thermosetting resin, and more preferably formed of at least a thermosetting resin and a thermoplastic resin. By forming at least a thermosetting resin, the film for semiconductor back surface can effectively function as an adhesive layer. Examples of the thermoplastic resin include natural rubber, butyl rubber, 16I8l4.doc 201246409, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid. Ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon or 6,6-nylon and other polyamide resin 'phenoxy resin, acrylic resin, PET (P〇lyEthylene Terephthalate) , polyethylene terephthalate or a saturated polyester resin such as PBT (P〇lyButylene Terephthalate), a polyamidoximine resin, or a fluororesin. The thermoplastic resin may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylic resin which is less ionic impurities and has high heat resistance and is reliable in securing semiconductor elements is particularly preferable. The acrylic resin is not particularly limited, and one or two or more kinds thereof have a carbon number of 30 or less (preferably, a carbon number of 4 to 18, more preferably a carbon number of 6 to 10, and particularly preferably A polymer of a linear or branched alkyl acrylate or methacrylic acid having a carbon number of 8 or 9) as a component or the like. That is, in the present invention, the term "acrylic resin" is intended to include the broad meaning of methacrylic resin. Examples of the alkyl group include a methyl group, an ethyl group, a propyl 'isopropyl group, a n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a 2-ethyl group. Hexyl, octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl 'dodecyl (lauryl), tridecyl, tetradecyl, stearic acid Base, octadecyl and the like. Further, the other monomer (the monomer other than the alkyl ester of acrylic acid or methacrylic acid having an alkyl group having 30 or less carbon atoms) is not particularly limited, and examples thereof include acrylonitrile. Acid, mercaptoacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, butene 161814.doc 201246409 Dicarboxylic acid, fumaric acid or crotonic acid and other carboxyl-containing monomers; Various anhydride monomers such as anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, (mercapto)acrylic acid 6 -Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate or methacrylic acid-(4-hydroxyindenyl ring Various hydroxy-containing monomers such as hexyl) ester; styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide _2 2 - methyl propyl sulfonate & L, (fluorenyl) acrylamide propyl sulfonate Various sulfonic acids such as acid, sulfopropyl (meth) acrylate or (meth) propylene decyl naphthalene sulfonic acid Monomers; or various phosphate ester 2_ hydroxyethyl Bing Xixi phosphoric acid group-containing monomer. Further, the term "(meth)propionic acid" means acrylic acid and/or mercaptoacrylic acid, and has the same meaning as the (meth) group of the present invention. Examples of the thermosetting resin include an epoxy resin and a phenol resin, an amine resin, an unsaturated polyester resin, a polyurethane resin, a polyoxo resin, and a thermosetting polyimide resin. Thermosetting tree The moon can be used alone or in combination of two or more. As the thermosetting resin, it is preferable that the epoxy resin i having a small amount of ionic impurities such as a rot-conducting conductor element is a hardener of an epoxy resin, and an age-receiving resin can be preferably used.乂二二乳树脂 is not particularly limited. For example, it can be used: double octagonal type octagonal oxyphyllin, bisphenol F type ring full of M ((4)... type epoxy resin, desertified double tree r ^ bis double (10) Type epoxy resin, double-laid epoxy biphenyl type epoxy resin, Cai type epoxy resin, first type epoxy resin, phenolic novolac type epoxy coat, Gongshu, and trishydroxyphenyl cresol novolac Type epoxy resin, money resin, tetraphenol ethane type epoxy resin, etc. J618J4.doc 201246409 T-energy epoxy resin or polyfunctional epoxy resin, or carbendazim type epoxy tree ruthenium, diglycidyl An epoxy resin such as a keto-urethane-type epoxy resin or a glycidylamine-type epoxy resin. As the % oxy-resin, in the above-described examples, a novolac-type epoxy resin, a ruthenium-based epoxy resin, A trihydroxyphenyl decane type epoxy resin or a tetraphenol phenyl type epoxy resin because the epoxy resin is highly reactive with a resin as a curing agent, and is excellent in heat resistance, etc. Further, the above phenol The resin is used as a hardener for the above epoxy resin, and examples thereof include phenol. Aldehyde varnish resin, phenol aralkyl resin, cresol novolak resin, third butyl phenol novolac resin, nonyl phenol novolak resin and other novolac type phenol resins; resol type phenol resin, polyparathoxy benzene A polyhydroxy styrene such as ethylene, etc. The phenol resin may be used singly or in combination of two or more kinds. Among these phenol resins, a phenol novolak resin or a phenol aralkyl resin is preferable. The reason is that the connection of the semiconductor device can be improved. The ratio of the epoxy resin to the phenol resin is preferably, for example, one equivalent per one equivalent of the epoxy group in the epoxy resin composition, and the hydroxyl group in the phenol resin is from 5 equivalents to 2.0 equivalents. The reason is that it is 8 equivalents to 12 equivalents, that is, if the blending ratio of the two is out of the above range, a sufficient curing reaction is not performed, and the properties of the cured epoxy resin are easily deteriorated. The content of the resin is preferably 5% by weight or more and 9% by weight or less, more preferably 10% by weight or less, based on the total resin component in the film for semiconductor back surface. The weight % or less is more preferably 15% by weight or more and 80% by weight or less. By setting the content to 5% by weight or more, 16I814.doc 201246409 can suppress the amount of thermal curing shrinkage. Further, when the sealing resin is thermally cured. The film for semiconductor back surface can be sufficiently thermally cured and then fixed to the back surface of the semiconductor element, and a flip-chip type semiconductor device can be produced. On the other hand, by setting the content to 90% by weight or less, it is possible to suppress The warpage of the package (PKG (Package 'Package): flip-chip type semiconductor device). The heat-hardening-promoting catalyst of the epoxy resin and the phenol resin is not particularly limited, and can be appropriately selected from the known heat-hardening-promoting catalyst. The heat-hardening-promoting catalyst can be used alone or in combination with two types of yttrium. As a thermosetting-promoting catalyst, for example, an amine-based hardening-promoting catalyst, a squamous hardening-promoting catalyst, and a salivary hardening promoting touch can be used. Medium, (4) Hardening promotes catalyst, breaks _ boron hardening promotes catalyst. The amine-based curing accelerator (amine-based curing-promoting catalyst) is not particularly limited, and examples thereof include monoethanolamine trifluoroboric acid (8 manufactured by Qin Chemifa Co., Ltd.), and dicyanodicimide (Ν_).碟 Τ Τ - - 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟 碟Triorganophosphines such as phenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolylphosphine; evolution of tetraphenyl scale (trade name; TPP_PB), desertification methyltriphenyl scale (trade name; TPP -MB), gasified methyltriphenyl scale (trade name; τρρ·Μ〇, methoxymethyltriphenyl chloroformate (trade name; Tpp_M〇c), gasified sulfhydryl triphenyl scale ( The product name; TPP_ZC), etc. (all manufactured by Beixing Chemical Co., Ltd.), and the above-mentioned diphenylphosphine-based compound are preferably those which are substantially soluble in the epoxy resin. If the epoxy is insoluble 161814 .doc 201246409 Sex, can inhibit the hardening during storage. The above shows a non-dissolving heat-hardening catalyst, for example, a non-methyldiphenyl scale (trade name; ΤΡΡ·ΜΒ), etc. Further, the above-mentioned "non-solubility" means that a tri-phenylphosphine system is included. The thermosetting catalyst of the compound is insoluble to the solvent containing the epoxy resin, and more specifically, t means that it does not dissolve more than 1% by weight in the range of 1 〇 to 4 0 C. The imidazole-based hardening promotion is carried out. Agent (imidazole-based hardening promoting catalyst), for example, 2_曱基口米. Sitting (trade name; 2MZ), 2_十-burning base saliva (trade name; Cll-ζ), 2-heptadecane Imidazole (trade name; C17z), U•dimercaptoimidazole (trade name; iJDMZ), 2-ethyl_4_mercaptoimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2pz) , 2_phenyl_4_methylimidazole (trade name; 2P4MZ), 1-benzyl-2-nonyl imidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2pZ ), 丨 · cyanoethyl _ 2-methyl savory saliva (trade name; 2MZ-CN), 1 · cyanoethyl 2 - 11 decyl carbazole (trade name; C11Z-CN), 1-cyanoethyl Base _2 phenylimidazole rust stupid triacid (trade name ; 2PZCNS-PW), 2,4-diamino-6-[2,-methylimidyl-(1)]-ethyl-Jingyi 11 well (trade name; 2MZ-A), 2,4 -diamino-6-[2,-undecylimidazolyl-(indenyl)]-ethyl-allotriazole (trade name; Cliz-A), 2,4-diamino-6-[2 '-Ethyl-4'-methylimidylpyridinylethyl·all three _ (trade name; 2Ε4ΜΖ-Α), 2,4-diamino-6-[2'-fluorenyl. m. _(ι,)]_ Ethyl_ Three-pigmented isocyanuric acid adduct (trade name; 2ΜΑ-ΟΚ), 2-phenyl-4,5-dihydroxydecyl imidazole (trade name; 2PHZ- PW), 2-phenyl_4_mercapto-5-hydroxymethylimidazole (trade name; 2P4MHZ-PW), etc. (all manufactured by Shikoku Chemical Industry Co., Ltd.). 161814.doc • 12·201246409 The boron-based hardening accelerator (boron-based hardening-promoting catalyst) is not particularly limited, and examples thereof include tri-borane and the like. The phosphorus-boron-based hardening accelerator (phosphorus-boron-based hardening-promoting catalyst) is not particularly limited, and examples thereof include tetraphenylphosphinium tetraphenyl borate (trade name; TPP-K) and tetraphenylene. Base scale tetra-p-triborate (trade name; τρρ· ΜΚ), ~ bis-base quaternary tetraphenyl borate (trade name; τρρ·ζκ), triphenylphosphine triphenylborane (trade name) ;TPP_S), etc. (all manufactured by Beixing Chemical Co., Ltd.). The ratio of the above-mentioned thermosetting-promoting catalyst is preferably 0.01 to 0.25% by weight based on the total amount of the resin component. When the above ratio of the thermosetting-promoting catalyst is 0.01% by weight or more, the thermosetting resin can be preferably thermally cured. Here, the film for laminating the semiconductor back surface of the layer may be a single layer, or may be a laminate having a plurality of total stems of 0.01 to 〇. 25% by weight of the layer may be a laminate of the film for the back surface of the semiconductor. In the case where the above ratio of the thermosetting-promoting catalyst is as long as the resin component of the laminated film as a whole is preferably made by containing an epoxy resin and

聯，較佳為於製作時預先添加與聚合物之 之分子鏈末端之官 作為上述半導體背面用膜， 紛樹脂之樹脂組合物、或含有 樹脂之樹脂組合物而形成。由 1618I4.doc -13- 201246409 能基等反應的多官能性化合物作為交聯劑。藉此，可提高 尚溫下之接著特性，實現耐熱性之改善。 半導體#面用膜對半導體晶圓之接著力（23。〇，剝離角 度180度，剝離速度3〇〇 mm/min)較佳為〇 5 爪阳〜^ N/20 mm之範圍，更佳為〇7 N/2〇爪⑺〜^ n/2〇 之範 圍藉由5又為0.5 n/20 mm以上，可以優異之密接性貼合 於半導體晶圓或半導體元件上’防止隆起等之產生。又， 生晶片之飛起。另一方 可容易地自切割膠帶制 亦可於切割半導體晶圓時防止產 面’藉由设為1 5 N/20 mm以下， 離。 作為上述交聯劑，並無特別限制，可使用公知之交勒 劑。具體而言，例如可列舉：異氰酸醋系交聯劑、環氧； 交聯劑、三聚氰胺系交聯劑、過氧化物系交聯劑，除“ 外’可列舉：尿素系交聯劑、金屬院氧化物系交聯劑、金 屬螯合物系交聯劑、金屬鹽系交聯劑、碳二醯亞胺 劑、十㈣系交聯劑、氮丙咬系交聯劑1系交聯劑等: 作為交聯劑，較佳為異氰酸醋系交聯劑或環氧系交聯劑。 又，上述交聯劑可單獨使用或組合2種以上使用。 作為上述異氰酸酯系交聯劑，例如可列舉：1 2 一里 酸乙H4-伸丁基二異氰酸酿、m-六亞甲基：= 酸醋等低級脂肪族聚異氛酸醋類；亞 、 ϊ® ? ^ - s « ^ 戌暴—異氰酸酯、 农己烷一異氰g“ '異佛酮二異氰酸酯、氫化 酸酯、氫化二甲笨二異氛旨等" 甲苯二異氰酸醋、2,6-甲苯-異^聚異亂酸酿類； ，6甲本一異氰酸自旨、 161814.doc 201246409 烷二異氰酸酯、苯二亞曱基二異氰酸酯等芳香族聚異氰酸 酯類等；除此以外亦可使用：三羥甲基丙烷/甲笨二異氰 西文酉曰二聚物加成物[Nippon Polyurethane工業股份公司製 造，商品名「Coronate L」]、三羥甲基丙烷/六亞甲基二 異氰酉夂S曰二聚物加成物[Nipp0I1 p〇iyUrethane工業股份公司 製造，商品名「Coronate HL」]等。又，作為上述環氧系 交聯劑，例如可列舉：N，N，N，，N，_四縮水甘油基·間二甲笨 一胺、一縮水甘油基苯胺、1，3-雙（n，N-縮水甘油基胺基曱 基）¾己烷、1，6-己二醇二縮水甘油醚、新戊二醇二縮水甘 油喊、乙一醇二縮水甘油_、丙二醇二縮水甘油謎、聚乙 一醇一縮水甘油醚、聚丙二醇二縮水甘油醚、山梨糖醇聚 縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油 醚、聚甘油聚縮水甘油醚、山梨糖醇酐聚縮水甘油醚、三 羥曱基丙烷聚縮水甘油醚、己二酸二縮水甘油酯、鄰苯二 甲酸二縮水甘油酯、異氰尿酸三縮水甘油基-三（2-羥基乙 基）酿、間苯二酚二縮水甘油醚、雙酚s-二縮水甘油醚， 除此以外，可列舉於分子内具有2個以上環氧基之環氧系 樹脂等。 再者，父聯劑之使用量並無特別限制，可根據交聯之程 度而適當地選擇。具體而言，作為交聯劑之使用量，例如 相對於聚合物成分（尤其是具有分子鏈末端之官能基之聚 。物）100重量份，通常較佳為設為7重量份以下（例如0.05 里伤〜7重量份）。若交聯劑之使用量相對於聚合物成分 1 00重量份多於7重量份，則接著力降低，故而欠佳。再 1618l4.doc 201246409 者，就凝聚力提高之觀點而言，交聯劑之使用量相對於聚 合物成分100重量份較佳為0 05重量份以上。 再者，於本發明中，亦可代替使用交聯劑而使用交聯劑 並且藉由電子束或紫外線等之照射而實施交聯處理。 上述半導體背面用膜較佳為進行著色。藉此，可發揮優 異之標記性及外觀性，可製成具有附加價值之外觀的半導 體裝置。如此，由於經著色之半導體背面用膜具有優異之 標記性，故而於半導體元件或使用該半導體元件之半導體 裝置之非電路面侧之面上，經由半導體背面用膜而進行雷 射標記，藉此可賦予文字資訊或圖形資訊等各種資訊。尤 其疋藉由控制著色之顏色，可以優異之視認性確認由標記 所賦予之資訊（文字資訊、圖形資訊等又，若使半導體 背面用膜著色’則可容易地與覆蓋襯塾等區分，可提高作 業性等。進而，例如作為半導體裝置，亦可對製品分別進 行顏色區分。於使半導體背面用膜有色之情形（並非益 色、透明之情形）時，作為藉由著色所呈現之色，並無特 別限制，例如較佳為黑色、冑色、紅色料色，尤佳為黑 色。 於本實施之形態中，所謂深色，基本上意指於LYb 色系統中所規定之L·成為60以下（0〜60)[較佳為5〇以 (〇〜5〇)，進而較佳為40以下（〇〜4〇)]之較深之顏色。 又·’所謂黑色’基本上意指於LVb•表色系統中所規 之L成為35以下（0〜35)[較佳為3〇以下（㈡〇)，進而較佳 25以下（〇〜25)]之黑色系顏色。再者於黑色中，於η 161814.doc -16 - 201246409 表色系統中所規定之a·或b·可分別依據L·之值而適當地選 擇。作為a或b ，例如較佳為兩者均為_丨〇〜丨〇，更佳為_ 5〜5，尤佳為-3〜3之範圍（其中，〇或大致為〇)。 再者，於本實施形態中，於L*a*b*表色系統中所規定之 L 、a 、b可藉由使用色彩色差計（商品名「cR_2〇〇」 Minoita公司製造；色彩色差計)進行測定而求出。再者， L Vb·表色系統為國際照明委員會咖⑹―c〇_issi〇n on mUmination，CIE)於1976年所推薦之色空間且意指 稱為CIE 1976(L*a*b·)表色系統之色空間。又，LVb•表色 系統於日本工業標準中由JIS Z 8729所規定。 於使半導體背面用膜著色時，可根據目標色而使用有色 材料（著色劑）。作為此種有色材料，可較佳地使用黑色系 有色材料、藍色系有色材料、紅色系有色材料等各種深色 系有色材料’尤佳為黑色系有色材料。作為有色材料可 為顏料、染料等任一者。有色材料可單獨使用或組合2種 以上使用。再者，作為染料，亦可使用酸性染料、反應染 料、直接染料、分散染料、陽離子染料等任一形態之染 料。又，顏料之形態亦無特別限制，可自公知之顏料中適 當地選擇使用。 尤其是若使用染料作為有色材料，則於半導體背面用膜 中’染料藉由溶解而成為均勻或大致均勻地分散之狀態， 故而可容易地製造著色濃度為均勻或大致均句之半導體背 面用膜(進而切割勝帶一體式半導體背面用膜因此，若 使用木料作為有色材料，則可使於切割膠帶一體式半導體 161814.doc 201246409 背面用膜中之半導體背面用膜之著色濃度均勾或大致均 勻’可提高標記性或外觀性。 作為黑色系有色材料’並無特別限制，例如可自無機黑 色系顏料、黑色系染料中適當地選擇。又，作為黑色系有 色材料，亦可為混合有氰系有色材料（藍綠系有色材料）、 洋紅系有色㈣（紅紫系有色材料）及黃色系有色材料（黃色 系有色材料）之有色材料混合物。黑色系有色材料可單獨 使用或組合2種以上使用。當然，黑色系有色材料亦可與 除黑色以外的顏色之有色材料併用。 具體而s，作為黑色系有色材料，例如可列舉：碳黑 (爐黑、槽黑、乙炔黑、熱解碳黑、燈黑等）、石墨（黑 鉛）、氧化銅、二氧化猛、偶氮系顏料（次曱基偶氮偶氮黑 等）' 笨胺黑、茈黑、鈦黑、花青黑、活性碳、鐵氧體（非 磁性鐵氧體、磁性鐵氧體等）、磁鐵礦、氧化鉻、氧化 鐵、二硫化翻、鉻錯合物、複合氧化物系黑色色素、蒽醌 系有機黑色色素等。 於本發明中’作為黑色系有色材料，亦可利用：C.i.溶 劑黑3、溶劑黑7、溶劑黑22、溶劑黑27、溶劑黑29、溶劑 黑34、溶劑黑43、溶劑黑70 ; C.I·直接黑17、直接黑19、 直接黑22、直接黑32、直接黑38、直接黑51、直接黑71 ; C.I.酸性黑1、酸性黑2、酸性黑24、酸性黑26、酸性黑 3 1、酸性黑48、酸性黑52、酸性黑1 07、酸性黑1 〇9、酸性 黑110、酸性黑119、酸性黑154 ; C.I.分散黑1、分散黑3、 分散黑10、分散黑24等黑色系染料；C.I.顏料黑1、顏料黑 161814.doc • 18 · 201246409 7等黑色系顏料等。 作為此種黑色系有色材料，例如市售有：商品名為 「〇1丨Black BY」者、商品名為「OilBlack BS」者、商品 名為「OilBlack HBB」者、商品名為r 〇ii Black 8〇3」 者、商品名為「Oil Black 860」者、商品名為「㈤b丨_ 5「970」者、商品名為r 〇H BUck 59〇6」者商品名為 「Oil Black 5905」者（Orient化學工業股份有限公司製造 等。 作為除黑色系有色材料以外之有色材料，例如可列舉·· 亂系有色材料、洋紅系有色材料、黃色系有色材料等。作 為氰系有色材料，例如可列舉：C<1溶劑藍25、溶劑藍 36、溶劑藍60、溶劑藍7〇、溶劑藍93、溶劑藍％ ;匚丄酸 性藍6、酸性藍45等氰系染料；CI顏料藍1、酸性藍2、酸 性藍3、酸性藍15、酸性藍15 :丨、酸性藍15 : 2、酸性藍 15: 3、酸性藍15: 4、酸性藍15: 5、酸性藍& 6、酸性 藍16、酸性藍17、酸性藍17 :丨、酸性藍以、酸性藍22、 酸性藍25、酸性藍56、酸性藍60、 酸性藍66 ; C.I.還原藍4、還原藍60 料等。 酸性藍63、酸性藍65、 ’ C.I.顏料綠7等氰系顏 ，作為洋紅系染料，例如可列 溶劑紅8、溶劑紅23、溶劑紅 又，於洋紅系有色材料中 舉：C.I.溶劑紅1、溶劑紅3、 24、溶劑紅25、溶劑紅27、溶劑紅3〇、溶劑紅49、溶劑紅 52、溶劑紅58、溶劑紅63、溶劑紅81、溶劑紅㈡、溶劑紅 83、溶劑紅84、溶劑紅1〇〇、溶劑紅1〇9、溶劑紅11 ^、溶 I6I8I4.doc -19- 201246409 劑紅121、溶劑紅122 ; C,I.分散紅9 ; C.I.溶劑紫8、溶劑紫 U、溶劑紫14、溶劑紫21、溶劑紫27 ; C.I.分散紫1 ; C.I. 鹼性紅1、鹼性紅2、鹼性紅9、鹼性紅12、鹼性紅13、鹼 |·生，’工14、驗性紅1 5、驗性紅17、驗性紅1 8、驗性紅22、驗 性紅23、鹼性紅24、鹼性紅27、鹼性紅29、鹼性紅32、鹼 J·生紅3 4、驗性紅3 5、驗性紅3 6、驗性紅3 7、驗性紅3 8、函 !生紅39、鹼性紅40 ; C.I·鹼性紫i、鹼性紫3、鹼性紫7、起 性紫1〇、鹼性紫14、驗性紫15、鹼性紫21、驗性紫25、起 性紫26、驗性紫27、28等。 16 22 37 顏料 顏料 顏料 顏料 於洋紅系有色材科中’作為洋紅系顏料，例如可列舉: C.I.顏料紅1、顏料紅2、顏料紅3、顏料紅*、顏料紅5、顏 料紅6、顏料紅7、顏料紅8、顏料紅9、顏料紅1〇、顏料紅 11、顏料紅12、顏料紅13、顏料紅14、顏料⑽、顏料紅 顏料紅17、顏料紅18、顏料紅19、顏料紅2ι 42、 ^4、顏料紅49、顏料紅49: i、顏料紅％、顏料紅η ^紅52、顏料紅52:2、顏料紅53:ι、顏料紅“、顏 二5、顏料紅56、顏料紅57 紐刺A 顏枓紅58、顏料紅60 顏枓紅60 : 1、顏料红63、麵 叶、63顏科紅63 : 1、顏料紅63 : 2 顏枓紅64、顏料紅64 :丨 , 顏枓紅67、顏料紅68、顏料 81、顏料紅83、顏料红87、顏 Qn . 肩枓、、工88、顏料紅89、顏料 、顏料紅92、顏料紅1〇1、 頸枓紅104、顏料紅1〇5、 顏料紅23、顏料紅30、顏料紅31、顏料紅32 顏料紅38、顏料紅39、顏料紅4Q、顏#41 顏料紅48小顏料紅48:2、顏料紅Μ」 161814.doc -20- 201246409 料紅106、顏料紅108、顏料紅112、顏料紅114、顏料紅 122、顏料紅123、顏料紅139、顏料紅144、顏料紅丨“、 顏料紅147、顏料紅149、顏料紅15〇、顏料紅151、顏料紅 163、顏料紅166、顏料紅168、顏料紅17〇、顏料紅η卜 顏料紅172、顏料紅175、顏料紅176、顏料紅177、顏料紅 178、顏料紅Π9、顏料紅184、顏料紅185、顏料紅士、、 顏料紅_、顏料紅193、顏料紅202、顏料紅梅、顏料红 膨顏料紅209、顏料紅219、顏料紅如、顏料紅224、 顏料紅238、顏料紅245;C.L顏料紫3、顏料紫9、顏 W、顏料紫23、顏料紫31、顏料扣、顏料㈣、顏㈣ 1顏料紫38、顏料紫43、顏料紫m還原紅還原 原紅H)、還原紅13、還原紅15、還原紅原 紅29、還原紅35等。 疋项 又，作為黃色系有色材料，例如 ,Q j到舉.C.I.溶劑黃 19、洛劑黃44、溶劑黃77、溶劑黃乃、溶 々 82、溶劑黃93、溶劑黃98、溶劑 汽、冷劑黃 立119 h廿 ^1〇3、溶劑黃104、溶劑 育112、溶劑黃162等黃色系染 43· ^ 顏枓橙31、顏料橙 仏以顏料W、顏料黃2、顏料黃3、顏料黃4、顏料主5、顏料黃6、顏料黃7、顏料黃1〇、顏料黃u、顏料： 12、顏料黃13、顏料黃14、顏料黃15、顏料黃汽 顏料黃2 4 顏料黃53 顏料黃7 5 顏料黃9 5 17 37 73 93 顏料黃23 顏料黃42 顏料黃74 顏料黃94 顏料黃3 4 顏料黃5 5 顏料黃8 1 顏料黃97 顏料黃3 5 顏料黃65 顏料黃83 顏料黃％ 顏剩 顏剩 顏制 顏 161814.doc 21 201246409 100、顏料黃ιοί、顏料黃104、顏料黃1〇8、顏料黃1〇9、 顏料黃no、彥員料黃113、顏料黃114、顏料黃116、顏料黃 ⑴、顏料黃120、顏料黃128、顏料黃129、顏料黃133、 /料η 138顏料黃139、顏料黃147、顏料黃15〇、顏料黃 151、顏料黃丨53、顏料黃154、顏料黃155、顏料黃^ 顏料黃167、顏料黃172、顏料黃⑺、_黃⑽、顏料黃 185、顏料黃195; c丄還原^，黃3、還原黃2〇等黃 色系顏料等。 氰系有色材料、洋紅系有色材料、冑色系有色材料等各 種有色材料可分別單獨使用或組合2種以上使用。再者， 於使用2種以上氰系有色材料、洋紅系有色材料黃色系 有色材料等各種有色㈣之情料，作為㈣有色材料之 混合比例(或調配比例）’並無特別限^，可根據各種有色 材料之種類或目標色等而適當地選擇。 於使半導體背面用膜14著色之情形日夺’其著色形態並無 特別限制。例如半導體背面用臈亦可為添加有著色劑之單 層膜狀物。又，亦可為至少藉廢古 6 m層彳#由至少熱硬化性樹脂 斤形成之樹脂層與著色劑層之積層獏。再者，於半導體背 面用膜14為樹脂層與著色劑層之積層臈之情形時 =態之半導體背面用膜14 ’較佳為具有樹脂層/著色劑 樹脂層之積層形態。於該情形時，著色劑層兩側之2個 :脂層可為相同組成之樹脂層，亦可為不同組成之樹脂 於半導體背面用膜14中 亦可見需要適當地調配其他添 ^ISM.doc •22· 201246409 加劑。作為其他添加劑，例如可列舉：填充劑(填料)、難 燃劑、石夕燒偶合劑、離子捕捉劑，除此以外，可列舉：增 量劑、抗老化劑、抗氧化劑、界面活性劑等。 a 作為上述填充劑，可為無機填充劑、有機填充劑之任— 者較佳為無機填充劑。藉由調配無機填充劑等填充劑， 可於半導Μ㈣膜上實現導電性之賦予或熱導性之提 高、彈性模數之調節等。再者，作為半導體背面用膜14, 可為導電性亦可為非導電性。作為上述無機填充劑，例如 可列舉：二氧化石夕、點土、石膏、碳_、硫酸鋇、氧化 鋁、氧化鈹、碳化矽、氮化矽等陶瓷類；鋁、銅、銀、 金、錄、鉻、船、錫、鋅、把、焊錫等金屬、或合金類； Ί Ο 3碳等之各種無機粉末等。填充劑可單獨使用或併 用2種以上。作為填充劑，纟中較佳為二氧切，尤佳為 炼融二氧切。再者，無機填充劑之平均粒徑較佳為〇】 —()Mm之範圍内，填充劑之平均粒徑例如可藉由 雷射繞射型粒度分佈测定裝置而測定。 匕上述填充劑（尤其是無機填充劑）之調配量相對於有機樹 腊成分_重量份，較佳為8〇重量份以下（〇重量份，重量 份）’尤佳為0重量份〜70重量份。 又’作為上述難燃劑’例如可列舉：三氧化銻、五氧化 録、漠化環氧樹脂等。難燃劑可單獨使用或併用2種以 上。作為上述石夕規偶合射，例如可列舉 基）乙基4氧基料、γ.縮水甘油氧基丙基三^氧氧基^ 規、y'縮水甘油氧基丙基f基二乙氧基石夕貌等。石夕燒偶合 I6I8I4.doc •23- 201246409 劑可單獨使用或併用2種以上β 如可列舉：水严石翻……述離子捕捉劍’例 用$ '月 11氧化鉍等。離子捕捉劑可單獨使 用或併用2種以上。 體背面用膜14例如可利用如下之慣用方法而形成： = 續環氧樹脂等熱硬化性樹脂、視需要之丙稀酸樹 製:備榭Γ生樹脂、及視需要之溶劑或其他添加劑等混合而 合物並使其形成為膜狀之層。具體而言，例如 如下方法等㈣成作為半導體背面用膜之膜狀之層 者W層）·將上述樹脂組合物塗佈於剝離層12上之方 ::於適當之分隔件(剝離紙等)上塗佈上述樹脂組合物而 形成樹脂層（或接著劑層）並將其轉印（移著）於剝離層^上 2方法等。再者’上述樹脂組合物可為溶液，亦可為分散 欣0 再者，於藉由含有環氧樹脂等熱硬化性樹脂之樹脂組合 而形成半導體背面用膜14之情形時’於將半導體背面用 膜應用於半導體晶圓前之階段，熱硬化性樹脂為未硬化或 部分硬化之狀態。於該情形時，於應用於半導體晶圓後 (具體而言，通常係於覆晶接合步驟中將密封材料固化 時）’使半導體背面用膜中之熱硬化性樹脂完全或大致完 全地硬化。 如此’即便半導體背面用膜含有熱硬化性樹脂，該熱硬 化性樹脂亦為未硬化或部分硬化之狀態，故而作為導體背 面用膜之凝膠分率，並無特別限制，例如可自50重量％以 下（〇重量〇/〇〜50重量％)之範圍内適當地選擇，較佳為3〇重 1618 丨 4.doc •24· 201246409 量％以下（〇重量。/。~30重量。/。），尤佳為10重量％以下（0重量 %〜10重量。/。）。半導體背面用膜之凝膠分率之測定方法可 藉由下述測定方法而測定。 <凝膠分率之測定方法> 自半導體背面用膜取樣並準確稱量約〇.1 g(試樣之重 量），利用網狀片材包覆該試樣後，於室溫下於約50 ml之 曱苯中浸潰1週《其後，自曱苯中提取溶劑不溶分（網狀片 材之内容物）’於13〇°C下乾燥約2小時，稱量乾燥後之溶 劑不溶分（浸潰、乾燥後之重量），並由下述式（3)算出凝膠 分率（重量°/〇)。 凝膠分率（重量％)=[(浸潰、乾燥後之重量）/(試樣之重 量）]χ1〇〇 (a) 再者，半導體背面用膜之凝膠分率除藉由樹脂成分之種 類或其含量、交聯劑之種類或其含量以外，亦可藉由加熱 溫度或加熱時間等控制。 於本發明中，於半導體背面用膜係藉由含有環氧樹脂等 熱硬化性樹脂之樹脂組合物而形成之膜狀物之情形時可 有效地發揮對半導體晶圓之密接性。 再者，於半導體晶圓之切割步驟_使用切削水，故而存 在半導體背面用膜吸濕而成為常態以上之含水率之情況。 若f此種高含水率之狀態下進行覆晶接合，則存^半導 體背面用臈14與半導體晶圓或其加工體（半導體 面積存水蒸氣而產生隆起之情況。因*，作為半導= 用膜’藉由形成為於兩面設置透濕性較高之核心材料之構 I618I4.doc -25- 201246409 成’可使水蒸氣擴散而避免上述問題。就該觀點而言，亦 可使用於核心材料之單面或雙面形成半導體背面用膜^ 4之 多層構le作為半導體背面用膜。作為上述核心材料’可列 舉：膜^例如聚酿亞胺膜、聚酷膜、聚對苯二甲酸乙二醋 膜聚萘_曱酸二乙醋膜、聚碳酸醋膜等）、經玻璃纖維 或塑膠製不織纖維強化之樹脂基板、碎基板或玻璃 等。 半導體责面用膜14之厚度（於積層膜之情形時，為總厚 度）並無特別限定，例如可自2 μιη〜2⑽㈣左右之範圍内適 當地選擇。it而，上述厚度較佳為4 μιη〜ΐ6〇 _左右更 佳為6 μηι〜1〇〇 μπι左右，尤佳為1〇陣〜8〇㈣左右。 上述半導體背面用膜14於未硬化狀態之饥下之拉伸儲 存彈性模數較佳為】GPa以上（例如i咖〜5〇㈣），更佳為 2 GPa以上，尤佳為3抓以上。若上述拉㈣存彈性模數 為！ GPa以上，則可於將半導體晶片與半導體背面用膜Μ •同自士刀割膠帶之勘著劑層32剝離後，將半導體背面用膜 14載置於支持體上並進行輸送等時，有效地抑制或防止半 導體背面用膜貼合於支持體上。再者，上述支持體例如稱 為載帶上之頂部膠帶或底部膠帶等。再者，於藉由含有熱 硬化性樹脂之樹脂組合物而形成半導體背面用膜Μ之情形 時，如上所i，熱硬化性樹脂通常為未硬化或部分硬^之 狀態’因此半導體背面用膜於抑下之彈性模數通常成為 熱硬化性樹脂於未硬化狀態或部分硬化狀離之2 3 ^ 性模數。 ^ T之彈 I61814.doc -26- 201246409 此處，半導體背面用膜14可為單層，亦可為積層有複數 個層之積層膜，但於為積層膜之情形時，於上述未硬化狀 態之m：下之拉伸儲存彈性模數只要以積層膜總體計為！ GPa以上（例如i GPa〜5G GPa)之範圍即可。又，半導體北 面用膜於未硬化狀態下之上述拉伸儲存彈性模數（ΜPreferably, it is formed by adding a film of a terminal of a polymer chain to the polymer at the time of production as a film for a semiconductor back surface, a resin composition of a resin, or a resin composition containing a resin. A polyfunctional compound such as a 1618I4.doc -13-201246409 energy group is used as a crosslinking agent. Thereby, the subsequent characteristics at a temperature can be improved, and the heat resistance can be improved. The adhesion of the semiconductor #面膜 to the semiconductor wafer (23. 〇, peel angle 180 degrees, peeling speed 3 〇〇 mm / min) is preferably in the range of 〇5 claw Yang ~ ^ N / 20 mm, more preferably 〇7 N/2〇(7)~^n/2〇 The range of 5 n or more is 0.5 n/20 mm or more, and it can be attached to a semiconductor wafer or a semiconductor element with excellent adhesion to prevent the occurrence of bumps and the like. Also, the raw wafer flies up. The other side can be easily made from a dicing tape or can prevent the surface of the semiconductor wafer from being cut by 1 5 N/20 mm or less. The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specific examples thereof include an isocyanic acid-based crosslinking agent and an epoxy resin; a crosslinking agent, a melamine-based crosslinking agent, and a peroxide-based crosslinking agent, and examples of the "external" include a urea-based crosslinking agent. Metal oxide oxide crosslinking agent, metal chelate crosslinking agent, metal salt crosslinking agent, carbodiimide agent, ten (four) crosslinking agent, and nitrogen-based crosslinking agent The crosslinking agent is preferably an isocyanate-based crosslinking agent or an epoxy-based crosslinking agent. The crosslinking agent may be used singly or in combination of two or more. Examples of the agent include: 1 2 linoleic acid, ethyl H, 4-butylene diisocyanate, m-hexamethylene: = acid vinegar, and the like, lower aliphatic polyisophthalic acid vinegar; sub, ϊ® ? - s « ^ Hurricane - Isocyanate, Acetone-Iso-Cyanide g" 'Isophorone Diisocyanate, Hydrogenated Acidate, Hydrogenated Dimethophene, etc." Toluene diisocyanate, 2,6- Toluene-isomeric polyacids; 6 Amethyst-isocyanate, 161814.doc 201246409 Alkyl diisocyanate, benzodiamidylene diisocyanate, etc. An acid ester or the like may be used in addition to the following: trimethylolpropane/methyl succinyl isocyanide dimer adduct [manufactured by Nippon Polyurethane Industrial Co., Ltd., trade name "Coronate L"], three Hydroxymethylpropane/hexamethylene diisocyanide S曰 dimer adduct [manufactured by Nipp0I1 p〇iyUrethane Industrial Co., Ltd., trade name "Coronate HL"]. Further, examples of the epoxy-based crosslinking agent include N, N, N, N, _tetraglycidyl, m-dimethyl amide, monoglycidyl aniline, and 1,3-bis (n). , N-glycidylamino fluorenyl) 3⁄4 hexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl sulphate, ethylene glycol diglycidyl _, propylene glycol diglycidol puzzle, poly Ethyl alcohol monoglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, Trihydroxydecylpropane polyglycidyl ether, diglycidyl adipate, diglycidyl phthalate, triglycidyl-tris(2-hydroxyethyl), resorcinol In addition to the glycidyl ether and the bisphenol s-diglycidyl ether, an epoxy resin having two or more epoxy groups in the molecule may be mentioned. Further, the amount of the parent to be used is not particularly limited and may be appropriately selected depending on the degree of crosslinking. Specifically, the amount of the crosslinking agent used is, for example, preferably 7 parts by weight or less based on 100 parts by weight of the polymer component (especially a polymer having a functional group at the end of the molecular chain) (for example, 0.05) Injury ~ 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesion is lowered, which is not preferable. Further, in the case of the improvement of the cohesive force, the amount of the crosslinking agent used is preferably 0. 05 parts by weight or more based on 100 parts by weight of the polymer component. Further, in the present invention, a crosslinking agent may be used instead of a crosslinking agent, and crosslinking treatment may be carried out by irradiation with an electron beam or ultraviolet rays. The film for semiconductor back surface is preferably colored. Thereby, the superior marking property and the appearance can be exhibited, and a semiconductor device having an added value can be obtained. In this way, since the colored semiconductor back surface film has excellent marking properties, the semiconductor element or the non-circuit surface side surface of the semiconductor device using the semiconductor element is laser-marked via the semiconductor back surface film. It can give various information such as text information or graphic information. In particular, by controlling the color of the coloring, the information given by the mark can be confirmed with excellent visibility (text information, graphic information, etc., if the film for the back surface of the semiconductor is colored), it can be easily distinguished from the cover lining. Further, for example, as a semiconductor device, it is also possible to color-separate the products. When the film for semiconductor back surface is colored (not in the case of color or transparency), the color is exhibited by coloring. There is no particular limitation, and for example, it is preferably black, ochre, or red, and particularly preferably black. In the embodiment of the present embodiment, the term "dark color" basically means that L· is 60 in the LYb color system. The following (0 to 60) [preferably 5 〇 to (〇 〇 5 〇), and further preferably 40 or less ( 〇 ~ 4 〇)] deeper color. Also · 'so-black' basically means The L in the LVb•color system is 35 or less (0 to 35) [preferably 3 〇 or less ((2) 〇), and further preferably 25 or less (〇 25 25)] black color. , at η 161814.doc -16 - 201246409 in the color system The a/ or b· can be appropriately selected according to the value of L·. As a or b, for example, both are preferably _丨〇~丨〇, more preferably _5~5, and particularly preferably - The range of 3 to 3 (where 〇 or roughly 〇). In addition, in the present embodiment, L, a, and b specified in the L*a*b* color system can be used by using a color difference meter. (The product name "cR_2〇〇" is manufactured by Minoita Co., Ltd.; color color difference meter) is determined by measurement. Furthermore, the L Vb color system is the International Commission on Illumination (6) - c〇_issi〇n on mUmination, CIE) The color space recommended in 1976 and refers to the color space called the CIE 1976 (L*a*b·) color system. Further, the LVb•color system is defined by JIS Z 8729 in Japanese Industrial Standards. When the film for semiconductor back surface is colored, a colored material (colorant) can be used depending on the target color. As such a colored material, various dark colored materials such as a black colored material, a blue colored material, and a red colored material are preferably used, and a black colored material is preferable. The colored material may be any of a pigment, a dye, and the like. The colored materials may be used singly or in combination of two or more. Further, as the dye, a dye of any form such as an acid dye, a reaction dye, a direct dye, a disperse dye, or a cationic dye may be used. Further, the form of the pigment is not particularly limited, and it can be appropriately selected from known pigments. In particular, when a dye is used as the coloring material, the dye in the film for semiconductor back surface is uniformly or substantially uniformly dispersed by dissolution, so that a film for semiconductor back surface having a uniform or substantially uniform coloring concentration can be easily produced. (The film for the semiconductor back surface is cut further. Therefore, if the wood is used as the colored material, the color density of the film for the semiconductor back surface in the film for the back surface of the dicing tape integrated semiconductor 161814.doc 201246409 can be hooked or substantially uniform. 'The black color-based material' is not particularly limited, and may be appropriately selected from inorganic black pigments and black dyes, and may be mixed with cyanide as a black colored material. A colored material mixture of a colored material (blue-green colored material), a magenta colored (four) (red-purple colored material), and a yellow colored material (yellow colored material). The black-based colored materials may be used alone or in combination of two or more. Of course, black colored materials can also be colored materials other than black. Specifically, s, as a black colored material, for example, carbon black (furnace black, channel black, acetylene black, pyrolytic carbon black, lamp black, etc.), graphite (black lead), copper oxide, and oxidized manganese , azo-based pigments (decyl azo azo black, etc.) ' stupid amine black, black, titanium black, cyanine black, activated carbon, ferrite (non-magnetic ferrite, magnetic ferrite, etc.) , magnetite, chromium oxide, iron oxide, disulfide, chromium complex, composite oxide black pigment, lanthanide organic black pigment, etc. In the present invention, 'as a black colored material, it is also possible to use: Ci solvent black 3, solvent black 7, solvent black 22, solvent black 27, solvent black 29, solvent black 34, solvent black 43, solvent black 70; CI · direct black 17, direct black 19, direct black 22, direct black 32 Direct black 38, direct black 51, direct black 71; CI acid black 1, acid black 2, acid black 24, acid black 26, acid black 3 1, acid black 48, acid black 52, acid black 1 07, acid black 1 〇9, acid black 110, acid black 119, acid black 154; CI dispersion black 1, dispersion black 3, dispersion black 10, Black pigment such as black 24; CI pigment black 1, pigment black 161814.doc • 18 · 201246409 7 black pigments, etc. As such black colored materials, for example, commercially available: trade name "〇1丨Black BY", the product name is "OilBlack BS", the product name is "OilBlack HBB", the product name is r 〇ii Black 8〇3", the product name is "Oil Black 860", the product name is "(5)b丨_ 5 "970", the product name is r 〇H BUck 59〇6", the product name is "Oil Black 5905" (Orient Chemical Industry Co., Ltd., etc.). Examples of the colored material other than the black colored material include a turbid colored material, a magenta colored material, and a yellow colored material. Examples of the cyan-based coloring material include C<1 solvent blue 25, solvent blue 36, solvent blue 60, solvent blue 7 oxime, solvent blue 93, solvent blue %; bismuth acid blue 6, acid blue 45, and the like. Dye; CI Pigment Blue 1, Acid Blue 2, Acid Blue 3, Acid Blue 15, Acid Blue 15: Barium, Acid Blue 15: 2, Acid Blue 15: 3, Acid Blue 15: 4, Acid Blue 15: 5, Acidity Blue & 6, Acid Blue 16, Acid Blue 17, Acid Blue 17: Hydrazine, Acid Blue, Acid Blue 22, Acid Blue 25, Acid Blue 56, Acid Blue 60, Acid Blue 66; CI Reduction Blue 4, Reduction Blue 60 materials, etc. Acid blue 63, acid blue 65, 'CI pigment green 7 and other cyanide pigments, as magenta dyes, for example, solvent red 8, solvent red 23, solvent red, and in magenta colored materials: CI solvent red 1 Solvent Red 3, 24, Solvent Red 25, Solvent Red 27, Solvent Red 3〇, Solvent Red 49, Solvent Red 52, Solvent Red 58, Solvent Red 63, Solvent Red 81, Solvent Red (II), Solvent Red 83, Solvent Red 84, solvent red 1 〇〇, solvent red 1 〇 9, solvent red 11 ^, dissolved I6I8I4.doc -19- 201246409 agent red 121, solvent red 122; C, I. dispersion red 9; CI solvent purple 8, solvent purple U, Solvent Violet 14, Solvent Violet 21, Solvent Violet 27; CI Disperse Violet 1; CI Alkaline Red 1, Alkaline Red 2, Alkaline Red 9, Alkaline Red 12, Alkaline Red 13, Alkali | 'Work 14, redness 1 5, test red 17, test red 18, test red 22, test red 23, alkaline red 24, alkaline red 27, alkaline red 29, alkaline red 32 , alkali J · raw red 3 4, test red 3 5, test red 3 6 , test red 3 7 , test red 3 8 , letter! raw red 39, alkaline red 40; CI · alkaline purple i , alkaline purple 3, alkaline purple 7, starting purple 1 〇, alkaline purple 14, test Sexual purple 15, alkaline purple 21, experimental purple 25, sexual purple 26, test purple 27, 28 and so on. 16 22 37 Pigment pigment Pigment pigments are used in magenta colored materials. 'As a magenta pigment, for example, CI Pigment Red 1, Pigment Red 2, Pigment Red 3, Pigment Red*, Pigment Red 5, Pigment Red 6, Pigment Red 7, Pigment Red 8, Pigment Red 9, Pigment Red 1〇, Pigment Red 11, Pigment Red 12, Pigment Red 13, Pigment Red 14, Pigment (10), Pigment Red Pigment Red 17, Pigment Red 18, Pigment Red 19, Pigment Red 2ι 42, ^4, Pigment Red 49, Pigment Red 49: i, Pigment Red%, Pigment Red η ^ Red 52, Pigment Red 52: 2, Pigment Red 53: ι, Pigment Red ", Yan 2, Pigment Red 56, Pigment Red 57 Newton A Yan Yanhong 58, Pigment Red 60 Yan Yanhong 60: 1, Pigment Red 63, Noodles, 63 Yanke Red 63: 1, Pigment Red 63: 2 Yan Honghong 64, Pigment Red 64: 丨, Yan Yanhong 67 , Pigment Red 68, Pigment 81, Pigment Red 83, Pigment Red 87, Yan Qn. Shoulder, Worker 88, Pigment Red 89, Pigment, Pigment Red 92, Pigment Red 1〇1, Neck Red 104, Pigment Red 1 〇5, Pigment Red 23, Pigment Red 30, Pigment Red 31, Pigment Red 32 Pigment Red 38, Pigment Red 39, Pigment Red 4Q, Yan #41 Pigment Red 48 Small Pigment Red 48:2, pigment red Μ" 161814.doc -20- 201246409 Magenta 106, Pigment Red 108, Pigment Red 112, Pigment Red 114, Pigment Red 122, Pigment Red 123, Pigment Red 139, Pigment Red 144, Pigment Red ", Pigment Red 147, Pigment Red 149, Pigment Red 15 〇, Pigment Red 151, Pigment Red 163, Pigment Red 166, Pigment Red 168, Pigment Red 17 〇, Pigment Red 卜 Pig Pigment Red 172, Pigment Red 175, Pigment Red 176, Pigment Red 177, Pigment Red 178, Pigment Red Pigment 9, Pigment Red 184, Pigment Red 185, Pigment Red, Pigment Red _, Pigment Red 193, Pigment Red 202, Pigment Red Plum, Pigment Red Pigment Red 209, Pigment Red 219, pigment red, pigment red 224, pigment red 238, pigment red 245; CL pigment violet 3, pigment violet 9, pigment W, pigment violet 23, pigment violet 31, pigment buckle, pigment (four), pigment (four) 1 pigment purple 38, pigment purple 43, pigment purple m red reduction red original H), red reduction 13, red reduction 15, red reduction red 29, reduction red 35, etc. 疋, again, as a yellow colored material, for example, Q j To the solution. CI Solvent Yellow 19, Luo Huang 44, Solvent Yellow 77, Solvent Yellow, Solvent 82, Solvent Yellow 9 3, Solvent Yellow 98, solvent vapor, cold agent Huang Li 119 h廿^1〇3, Solvent Yellow 104, Solvent Breeding 112, Solvent Yellow 162, etc. Yellow Dyeing 43· ^ Yan Yi Orange 31, Pigment Orange, Pigment W , pigment yellow 2, pigment yellow 3, pigment yellow 4, pigment main 5, pigment yellow 6, pigment yellow 7, pigment yellow 1 颜料, pigment yellow u, pigment: 12, pigment yellow 13, pigment yellow 14, pigment yellow 15, Pigment yellow steam pigment yellow 2 4 pigment yellow 53 pigment yellow 7 5 pigment yellow 9 5 17 37 73 93 pigment yellow 23 pigment yellow 42 pigment yellow 74 pigment yellow 94 pigment yellow 3 4 pigment yellow 5 5 pigment yellow 8 1 pigment yellow 97 pigment Yellow 3 5 Pigment Yellow 65 Pigment Yellow 83 Pigment Yellow % Yan Yanyan Remnant Face 161814.doc 21 201246409 100, Pigment Yellow ιοί, Pigment Yellow 104, Pigment Yellow 1〇8, Pigment Yellow 1〇9, Pigment Yellow No, Yanren Huang 113, Pigment Yellow 114, Pigment Yellow 116, Pigment Yellow (1), Pigment Yellow 120, Pigment Yellow 128, Pigment Yellow 129, Pigment Yellow 133, /Material η Pigment Yellow 139, Pigment Yellow 147, Pigment Yellow 15〇 , Pigment Yellow 151, Pigment Astragalus 53, Pigment Yellow 154, Pigment Yellow 155, Pigment Yellow^ Pigment Yellow 167, Pigment Yellow 172, Pigment Yellow (7), _Yellow , Pigment Yellow 185, Pigment Yellow 195; c ^ Shang reduction, Yellow 3, Yellow Vat Yellow 2〇 other color pigments. Various kinds of colored materials such as a cyan-based coloring material, a magenta colored material, and a ochre-colored material can be used alone or in combination of two or more. In addition, various colored (four) materials such as two or more kinds of cyan-based colored materials and magenta-colored colored materials are used, and the mixing ratio (or blending ratio) of the (four) colored materials is not particularly limited. The type of various colored materials, the target color, and the like are appropriately selected. In the case where the film 14 for semiconductor back surface is colored, the color form is not particularly limited. For example, the back side of the semiconductor may be a single layer film to which a coloring agent is added. Further, it is also possible to use at least a layer of a resin layer formed of at least a thermosetting resin and a layer of a colorant layer. In the case where the semiconductor back film 14 is a laminate of a resin layer and a colorant layer, the semiconductor back surface film 14' of the = state preferably has a laminated form of a resin layer/colorant resin layer. In this case, two of the two sides of the colorant layer: the lipid layer may be a resin layer of the same composition, or a resin having a different composition may be seen in the film 14 for semiconductor back surface, and it is also necessary to appropriately mix other additives. •22· 201246409 Additives. Examples of the other additives include a filler (filler), a flame retardant, a sulphur coupling agent, and an ion scavenger, and examples thereof include an extender, an anti-aging agent, an antioxidant, a surfactant, and the like. . a The filler may be any of an inorganic filler and an organic filler, and is preferably an inorganic filler. By blending a filler such as an inorganic filler, it is possible to impart conductivity or thermal conductivity, adjust the elastic modulus, and the like to the semiconductive silicon (tetra) film. Further, the film 14 for semiconductor back surface may be electrically conductive or non-conductive. Examples of the inorganic filler include ceramics such as sulphur dioxide, earth, gypsum, carbon _, barium sulfate, aluminum oxide, cerium oxide, cerium carbide, and cerium nitride; aluminum, copper, silver, gold, and the like. Recording, chromium, ship, tin, zinc, handle, solder and other metals, or alloys; Ί Ο 3 carbon and other inorganic powders. The filler may be used singly or in combination of two or more. As the filler, the oxime is preferably dioxane, and particularly preferably sinter dioxotomy. Further, the average particle diameter of the inorganic filler is preferably in the range of 〇 - () Mm, and the average particle diameter of the filler can be measured, for example, by a laser diffraction type particle size distribution measuring apparatus. The amount of the above-mentioned filler (especially the inorganic filler) is preferably 8 parts by weight or less (parts by weight, parts by weight) with respect to the amount of the organic wax component, particularly preferably 0 parts by weight to 70% by weight. Share. Further, the above-mentioned flame retardant is exemplified by antimony trioxide, pentoxide, and desertified epoxy resin. The flame retardant may be used singly or in combination of two or more. Examples of the above-mentioned stone-coupled coupling include, for example, ethyl 4-oxyl, γ-glycidoxypropyltrioxycarbonyl, and y-glycidoxypropyl-f-diethoxylate. Xi Xi and so on. Shi Xizhuo coupling I6I8I4.doc •23- 201246409 The agent can be used alone or in combination of two or more types of β. For example, water-stained stone is turned over... The ion-capturing sword is used as an example. The ion scavenger may be used singly or in combination of two or more. The film 14 for the back surface can be formed, for example, by the following conventional methods: = a thermosetting resin such as an epoxy resin, or an acrylic tree as needed: a raw resin, a solvent or other additives as needed The mixture is mixed and formed into a film-like layer. Specifically, for example, the following method (4) is formed into a film-like layer of a film for semiconductor back surface, W layer), and the resin composition is applied to the release layer 12: a suitable separator (release paper, etc.) A method in which the above resin composition is applied to form a resin layer (or an adhesive layer), and is transferred (moved) to a release layer 2 or the like. In addition, the resin composition may be a solution or may be a dispersion. In the case where the film for semiconductor back surface 14 is formed by a combination of a resin containing a thermosetting resin such as an epoxy resin, The film is applied to a stage before the semiconductor wafer, and the thermosetting resin is in an unhardened or partially hardened state. In this case, after application to the semiconductor wafer (specifically, when the sealing material is usually cured in the flip chip bonding step), the thermosetting resin in the film for semiconductor back surface is completely or substantially completely cured. When the film for semiconductor back surface contains a thermosetting resin, the thermosetting resin is in an unhardened or partially cured state. Therefore, the gel fraction of the film for a conductor back surface is not particularly limited, and for example, it can be 50 weights. % or less (〇 weight 〇 / 〇 ~ 50% by weight) is appropriately selected, preferably 3 〇 1618 丨 4. doc • 24 · 201246409 9% by weight (〇 weight. /. ~ 30 weight. /. It is particularly preferably 10% by weight or less (0% by weight to 10% by weight). The method for measuring the gel fraction of the film for semiconductor back surface can be measured by the following measurement method. <Method for Measuring Gel Fraction> Sampled from the film on the back side of the semiconductor and accurately weighed about 0.1 g (weight of the sample), and the sample was coated with a mesh sheet, and then allowed to stand at room temperature. About 50 ml of benzene was immersed for 1 week. After that, the solvent-insoluble matter (content of the mesh sheet) was extracted from benzene to dry at about 13 ° C for about 2 hours, and the solvent after drying was weighed. Insoluble matter (weight after dipping and drying), and the gel fraction (weight ° / 〇) was calculated from the following formula (3). Gel fraction (% by weight) = [(wetting, weight after drying) / (weight of sample)] χ 1 〇〇 (a) Further, the gel fraction of the film for semiconductor back surface is divided by the resin component The type or the content thereof, the kind of the crosslinking agent or the content thereof may be controlled by heating temperature, heating time, or the like. In the case of the film for semiconductor back surface, when the film is formed of a resin composition containing a thermosetting resin such as an epoxy resin, the adhesion to the semiconductor wafer can be effectively exhibited. Further, in the dicing step of the semiconductor wafer, the cutting water is used, so that the film for semiconductor back surface absorbs moisture and becomes a normal water content. When flip-chip bonding is performed in a state of high moisture content, the semiconductor back surface 14 and the semiconductor wafer or the processed body thereof are stored (the semiconductor region is filled with water vapor to cause bulging. Because *, as a semiconductor = The film 'is formed by the formation of a core material having a high moisture permeability on both sides, I618I4.doc -25-201246409, to prevent the above problem from being diffused by water vapor. From this point of view, it can also be used in the core. A multilayer structure of a film for semiconductor back surface is formed on one side or both sides of the material as a film for semiconductor back surface. As the above-mentioned core material, a film such as a polyimide film, a polycarbamide film, or a polyterephthalic acid can be cited. A polyethylene resin film, a polyethylene naphthalate film, a polycarbonate film, or the like, a resin substrate reinforced with a glass fiber or a plastic non-woven fabric, a broken substrate, or a glass. The thickness of the semiconductor film 14 (the total thickness in the case of the laminated film) is not particularly limited, and can be appropriately selected, for example, from about 2 μm to 2 (10) (four). It is preferable that the thickness is preferably 4 μm to ΐ6 〇 _ or so, preferably about 6 μηι to 1 〇〇 μπι, and more preferably about 1 〇 array to 8 〇 (four). The tensile storage elastic modulus of the film for semiconductor back surface 14 in the unhardened state is preferably GPa or higher (e.g., i coffee to 5 〇 (4)), more preferably 2 GPa or more, and still more preferably 3 or more. If the above pull (four) storage elastic modulus is! When the semiconductor wafer and the film for semiconductor back surface are peeled off from the coating layer 32 of the tape-cut tape, the semiconductor back surface film 14 is placed on the support and transported, etc., and is effective. The film for semiconductor back surface is suppressed or prevented from adhering to the support. Further, the above support body is referred to as, for example, a top tape or a bottom tape on a carrier tape. In the case where the film for semiconductor back surface is formed by the resin composition containing a thermosetting resin, as described above, the thermosetting resin is usually in an unhardened or partially hard state. Therefore, the film for semiconductor back surface is used. The elastic modulus which is suppressed is usually a thermosetting resin which is in an uncured state or a partially hardened state. ^弹弹弹 I61814.doc -26- 201246409 Here, the film 14 for semiconductor back surface may be a single layer, or may be a laminated film in which a plurality of layers are laminated, but in the case of a laminated film, in the above unhardened state m: the tensile modulus of the lower storage elastic modulus as long as the total thickness of the laminated film! The range of GPa or more (for example, i GPa to 5G GPa) is sufficient. Further, the above-mentioned tensile storage elastic modulus of the film on the north side of the semiconductor in an uncured state (Μ

It由樹脂成分（熱塑性樹脂、熱硬化性樹脂）之種類或其含 量、二氧化石夕填料等填充材料之種類或其含量等而控制。 再者，於半導體背面用膜14為積層有複數個層之積層膜之 情形時（於半導體背面用膜具有積層形態之情形時）’作為 其積層形態，例如可例示包含晶圓接著層與雷射標記層之 積層形態等…於此種晶圓接著層與雷射標記層之間， 亦可設置其他層(中間層、光線阻斷層、加強層、著色 :、基材層、電磁波阻斷層、熱導層、黏著層等再 ^晶圓接著層係對晶圓發揮優異之密接性（接著性）之 層，且為與晶圓之背面接觸之層。另-方面，雷射桿，己層 … 射仏己陡之層，且為於對半導體晶片之背 面進行雷射標記時所利用之層。 再者’上述拉伸儲存彈性模數係如下所得之值：製作未 硬化狀態之半導體背面用膜14且 个便其積層於切割膠帶3 上’使用Rheometric公司製诰夕叙吁* 之動態黏彈性測定裝置It is controlled by the kind of the resin component (thermoplastic resin, thermosetting resin) or the content thereof, the type of the filler such as a silica dioxide filler, or the content thereof. In the case where the film 14 for the semiconductor back surface is a laminated film in which a plurality of layers are laminated (in the case where the film for semiconductor back surface has a laminated form), as a laminated form, for example, a wafer via layer and a ray may be exemplified. The layered shape of the marking layer, etc., between the wafer underlayer and the laser marking layer, other layers (intermediate layer, light blocking layer, reinforcing layer, coloring: substrate layer, electromagnetic wave blocking) may be provided. The layer, the thermal conductive layer, the adhesive layer, etc., the layer of the wafer followed by the layer that exhibits excellent adhesion (adhesion) to the wafer, and is the layer that is in contact with the back side of the wafer. In another aspect, the laser rod, The layer that is used to strike the steep layer and is used for laser marking the back side of the semiconductor wafer. Further, the above-mentioned tensile storage elastic modulus is obtained by the following values: making an uncured semiconductor The film 14 for the back surface is laminated on the dicing tape 3' using the dynamic viscoelasticity measuring device of Rheometric Co., Ltd.

An—RS A2」，以拉伸模式於試樣寬度：10 二：長度：22.5 mm、試樣厚度：〇2咖且頻率：！ 之侔件下、…… 虱“楗下、既定溫度(23。〇 條件下進仃測定而獲得之拉伸儲存彈性模數之值。 I6I8I4.doc •27· 201246409 半導體背面用膜14中之可見光（波長：400 nm〜800 nm) 之透光率（可見光線透射率）並無特別限制，例如較佳為 20%以下（〇%~20。/〇)之範圍，更佳為ι〇〇/。以下（〇%〜1〇%)，尤 佳為5°/。以下（0%〜50/。）。若半導體背面用膜14之可見光線透 射率大於20%，則有因光線通過而對半導體元件造成不良 影響之虞。又’上述可見光線透射率（％)可藉由半導體背 面用膜14之樹脂成分之種類或其含量、著色劑（顏料或染 料等）之種類或其含量、無機填充材料之含量等而控制。 半導體背面用膜14之可見光線透射率可以如下方式 進行測定《即，製作厚度（平均厚度）20 μιη之半導體背面 用膜14單體。其次，對於半導體背面用膜14，以既定之強 度’照射波長為400 nm〜800 nm之可見光線[裝置：島津製 作所製造之可見光產生裝置（商品名r Absorption SPECTRO PHOTOMETR」）]，並對所透射之可見光線之強 度進行測定。進而，可根據可見光線透射半導體背面用膜 W之前後強度變化而求出可見光線透射率之值。再者亦 可藉由厚度不為20 μη!之半導體背面用膜14之可見光線透 射率（0/〇 ;波長：400 nm〜800 nm)之值而推導出厚度為 2〇μηι之半導體背面用膜14之可見光線透射率（％ ;波長： 4〇〇 nm〜800 nm)。又，於本發明中，求出於厚度2〇叫^之 半導體背面用膜14之情形時之可見光線透射率（％)，但主 旨並非將本發明之半導體背面用膜限定為厚度2〇 μπι者。 又，作為半導體背面用膜14,較佳為其吸濕率較低。具 體而言’上述吸濕率較佳為i重量％以下，更佳為〇 8重量 161814.doc -28 - 201246409 〇/〇以下。藉由將上述吸濕率設為〗重量。以下，可提高雷射 標記性。又，例如於回焊步驟中，亦可抑制或防止於半導 體背面用膜14與半導體元件之間產生空隙等。再者，上述 吸濕率係藉由於溫度85〇c '相對濕度85%RH(Relative Humidlty，相對濕度）之氣體環境下將半導體背面用膜14放 置168小時之前後之重量變化而算出之值。於藉由含有熱 硬化性樹脂之樹脂組合物而形成半導體背面用膜“之情形 時’上述吸濕率意指於溫度85t、相對濕度85β/顧之氣體 環境下對熱硬化後之半導體f面用膜放置168小時之值。 又’上述吸濕率例如可藉由改變無機填料之添加量而調 又’作為半導體背面用膜14，較佳為揮發分之比例較少 ::具體而言，較佳為加熱處理後之半導體背面用膜14之 失率(重量損失量之比例)為1重量。/。以下，較佳為 〇.8重量％以下。加熱處理之條 牛例如為加熱溫度250〇C、 加熱時間1小時。藉由將上述 下，可提高雷射標記性。又，失率設為1重量%以 u φ 例如亦可於回焊步驟中抑制 或防止於覆晶型之半導體裝置上產 率例如可藉由添加能夠減少“ 乂。上述重量損失 無機物而調整。再者，於藉3 =回焊時之龜裂產生之 合物而形成半導體背面用膜14之产开;硬化性樹脂之樹脂組 意指於加熱溫度250。。、加熱時間:二時，上述重量損失率 後之半導體背面用膜進行加熱時之值f之條件下對熱硬化 (剝離層12) 161814.doc .29· 201246409 作為剝離層12,例如可使用：紙等紙系基材；布、不織 布、毛鼓、網狀物等纖維系基材；金屬羯、金屬板等金屬 系基材；塑膠之膜或片材等塑膠系基材；橡膠片材等橡膠 系基材；#泡片材等發泡體或該等之積層體[尤其是塑膠 系基材與其他基材之積層體、或塑膠膜(或片材)彼此之積 層體等]等適當之薄片體。於本發明中，作為基材，可較 佳地使用塑膠之膜或片材等塑膠系基材。作為此種塑膠材 料中之素材，例如可列舉：聚乙烯（P〇]yEthylene，PE)、 聚丙烯（Polypropylene，PP)、乙烯.丙烯共聚物等烯煙系樹 脂；乙稀-乙酸乙烯酯共聚物（Ethylene Vinyi Acetate， EVA)、離子聚合物樹脂、乙烯_(甲基）丙烯酸共聚物、乙 稀-(甲基）丙稀酸酯（無規、交替）共聚物等以乙烯作為單體 成分之共聚物；聚對苯二甲酸乙二酯（ΡΕτ)、聚萘二甲酸 二乙酯（PolyEthyleneNaphthelate，PEN)、聚對苯二曱酸丁 二醋（PBT)等聚酯；丙烯酸系樹脂；聚氣乙烯（p〇lyVinyl Chloride ’ PVC);聚胺基甲酸酯；聚碳酸酯；聚苯硫醚 (PolyPhenylene Sulfide ’ PPS);聚醯胺（尼龍）、全芳香族 聚醯胺（芳香族聚醯胺）等醯胺系樹脂；聚醚醚酮（p〇lyEther Ether Ketone ’ PEEK);聚醯亞胺；聚醚醯亞胺；聚偏氣乙 烯；ABS(Acrylonitrile-Butadiene-Styrene，丙稀腈-丁二 烯-苯乙烯共聚物）；纖維素系樹脂；聚矽氧樹脂；氟樹脂 又，作為剝離層12之材料，可列舉上述樹脂之交聯體等 聚合物。上述塑膠膜可以未延伸之方式使用，亦可見需要 1618t4.doc -30· 201246409 使用實施單軸或雙軸延伸處理者β 剝離層12可適當地選擇同種或異種者使用，亦可見需要 使用混合數種者。X ’為了於背面用膜14上貼附半導體晶 圓20或切晶環22後使剝離層12容易剝離，亦可實施剝離處 理。又，為了對剝離層12賦予抗靜電功能，可於上述剝離 層12上設置包含金屬、合金、該等氧化物等之厚度為 3〇〜500 Α左右之導電性物質之蒸鍍層。剝離層12可為單層 或2種以上之多層。 剝離層12之厚度（於為積層體之情形時為總厚度）並無特 別限制，可根據強度或柔軟性、制目的等而適當地選 擇，例如通常為1000 μηι以下（例如i μηι〜1〇〇〇 μιη),較佳 為10 μιη〜500 μηι，進而較佳為2〇 μιη〜3〇〇 μηι，尤佳為儿 μηι〜200 μπι左右，但並不限定於該等。 再者，於無損本發明效果等之範圍内，於剝離層12中亦 可含有各種添加劑（著色劑、填充劑、可塑劑、抗老化 劑、抗氧化劑、界面活性劑、難燃劑等）。 (環狀黏著劑層16) 黏著劑層16係藉由黏著劑而形成，並具有黏著性。作為 此種黏著劑’並無制限制，可自公知之黏著劑中適當地 選擇。具體而s，作為黏著劑，例如可自丙稀酸系黏著 劑、橡膠系黏著劑、乙稀基院基趟系毒占著劑、聚石夕氧系黏 著劑、聚酯系黏著劑、聚醯胺系黏著劑、胺基甲酸酯系黏 著劑、氟系黏著劑、苯乙烯_二烯嵌段共聚物系黏著劑、 於該等黏著劑中調配炫點約為·。C以下之熱溶融性樹脂 I6I814.doc 201246409 隻特f生改良型黏著劑等公知之黏著劑（例如參照曰本 八利特開昭56_61468號公報、日本專利特開昭61-174857號 公報、日本專利特開昭63_17981號公報、日本專利特開昭 56-13040號公報等)令，適當地選擇具有上述特性之黏著劑 。使用X ’作為黏著劑，亦可使用放射線硬化型黏著劑 (或能量射線硬化型毒占著劑）、錢膨服性黏著齊！。黏著劑 可單獨使用或組合2種以上使用。 作為上述黏著劑，可較佳地使用丙烯酸系黏著劑、橡膠 系黏著劑，尤佳為丙烯酸系黏著劑。作為丙烯酸系黏著 劑可列舉以將（甲基）丙烯酸烷基酯之1種或2種以上用作 單體成分之丙烯酸系聚合物（均聚物或共聚物）作為基底聚 合物之丙烯酸系黏著劑。 作為上述丙烯酸系黏著劑中之（曱基）丙烯酸烷基酯，例 如可列舉：（曱基）丙烯酸甲酯、（曱基）丙烯酸乙酯、（曱基） 丙烯酸丙酯、（甲基）丙烯酸異丙酯、（曱基）丙烯酸丁酯、 (甲基）丙烯酸異丁酯、（甲基）丙烯酸第二丁酯、（曱基）丙烯 酸第二丁酯、（曱基）丙稀酸戊酯、（曱基）丙烯酸己酯、（曱 基）丙稀酸庚酯、（曱基）丙稀酸辛酯、（曱基）丙稀酸2_乙基 己酯、（曱基）丙烯酸異辛酯、（曱基）丙烯酸壬酯、（曱基）丙 烯酸異壬酯、（曱基）丙烯酸癸酯、（曱基）丙烯酸異癸酯、 (曱基）丙烯酸十一烷基酯、（甲基）丙烯酸十二烷基酯、（曱 基）丙烯酸十三烷基酯、（曱基）丙烯酸十四烷基酯、（曱基） 丙烯酸十五烧基酯、（曱基）丙烯酸十六烷基酯、（曱基）丙 烯酸十七烷基酯、（曱基）丙烯酸十八烷基酯、（曱基）丙稀 I61814.doc -32- 201246409 酸十九烧基酿、（曱基）丙稀酸二十烷基酿等（甲基）丙稀酸 烷基醋等。作為(甲基)丙烯酸烷基醋，較佳為烷基之碳數 為4~18之（甲基）丙烯酸烧基醋。再者，（甲基）丙稀酸院基 酯之烷基可為直鏈狀或支鏈狀之任一者。 再者，為了改良凝聚力、耐熱性、交聯性等，上述丙烯 合物亦可見需要含有與可與上述（甲基）丙稀酸烧基 酉旨共聚合之其他單體成分（共聚合性單體成分）對應之單 元。作為此種共聚合性單體成分，例如可列舉：（曱基）丙 烯酸（丙烯酸、曱基丙烯酸）、丙烯酸羧基乙酯、丙烯酸羧 基戊酯、衣康酸、順丁烯二酸、反丁烯二酸、丁烯酸等含 幾·基單體；順丁烯二酸酐、衣康酸酐等含酸酐基單體； (曱基）丙烯酸羥基乙酯、（甲基）丙烯酸羥基丙酯、（甲基）丙 烯酸羥基丁酯、（甲基）丙烯酸羥基己酯、（甲基）丙烯酸羥 基辛酯、（曱基）丙烯酸羥基癸酯、（曱基）丙烯酸羥基月桂 基酯、甲基丙歸酸（4_羥基甲基環己基）曱酯等含經基單 體，笨乙烯續酸、稀丙基項酸、2-(甲基）丙稀醯胺_2_甲基 丙磺酸、（曱基）丙烯醯胺丙磺酸、（曱基）丙烯酸磺丙酯、 (甲基）丙烯酿氧基萘續酸等含項酸基單體；磷酸2_經基乙 基丙稀醯基酯等含填酸基單體；（甲基）丙烯醯胺、N，N_二 甲基（甲基）丙烯醯胺、N-丁基（甲基）丙烯醯胺、N-羥曱基 (曱基）丙烯醯胺、N-羥曱基丙烷（甲基）丙烯醯胺等（n-取 代）醯胺系單體；（甲基）丙烯酸胺基乙酯、（曱基）丙烯酸 N，N-二曱胺基乙酯、（曱基）丙烯酸第三丁胺基乙酯等（曱 基）丙烯酸胺基烷基酯系單體；（曱基）丙稀酸甲氧基乙酯、 161814.doc -33· 201246409 (曱基）丙烯酸乙氧基乙酯等（曱基）丙烯酸烷氧基烷基酯系 單體；丙烯腈、甲基丙烯腈等氰基丙烯酸酯單體；（曱基） 丙稀酸縮水甘油酯等含環氧基丙烯酸系單體；苯乙烯、α_ 曱基苯乙烯等苯乙烯系單體；乙酸乙烯酯、丙酸乙烯酯等 乙稀基酯系單體；異戊二烯、丁二烯、異丁烯等烯烴系單 體；乙烯基醚等乙烯基醚系單體；Ν_乙烯基吡咯烷酮、曱 基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基 嘧啶、乙烯基哌畊、乙烯基。比畊、乙烯基D比咯、乙烯基咪 唑、乙烯基噚唑、乙烯基咪啉、N_乙烯基羧醯胺類、…乙 稀基己内醯胺等含氮單體；N-環己基順丁烯二酿亞胺、N_ 異丙基順丁稀二醯亞胺、N-月桂基順丁稀二醯亞胺、N_苯 基順丁烯二醯亞胺等順丁烯二醯亞胺系單體；义曱基衣康 醯亞胺、N-乙基衣康醢亞胺、N_丁基衣康醯亞胺、N_辛基 衣康醯亞胺、N_2_乙基己基衣康醯亞胺、Ν·環己基衣康醯 亞胺Ν_月桂基衣康醯亞胺等衣康醯亞胺系單體；Ν_(甲 基）丙烯酿氧基亞f基丁二醯亞胺、Ν_(曱基）丙烯酿基_心 氧基六亞甲基丁二醯亞胺、Ν_(甲基）丙_基_8_氧基八亞 甲基丁二醯亞胺等丁二醯亞胺系單體；聚乙二醇(甲基)丙 稀酸醋、聚丙二醇（曱基）丙稀酸醋、曱氧基乙二醇（甲基） 丙烯酸醋、甲氧基聚丙二醇(甲基)丙埽酸酷等二醇系丙稀 酸醋單體；（甲基）丙稀酸四氫糠賴、敗化（甲基）丙稀酸 醋、含聚梦氧炫（f基）丙稀酸醋等具有雜環、函素原子、 石夕原子等之丙稀酸醋系單體；己二醇二(甲基)丙稀酸醋、 (聚)乙二醇二(甲基)丙烯酸醋、(聚)丙二醇二(甲基)丙烯酸 16i8I4.doc -34· 201246409 酯、新戊二醇二（甲基）丙烯酸酯、季戊四醇二（甲基）丙烯 酸酯、三羥甲基丙烷三（甲基）丙烯酸酯、季戊四醇三（甲 基）丙烯酸酯、二季戊四醇六（甲基）丙烯酸酯、環氧丙烯酸 酯、聚酯丙烯酸酯、胺基曱酸酯丙烯酸酯、二乙烯基笨、 二（曱基）丙烯酸丁酯、二（曱基）丙烯酸己酯等多官能單體 等。該等共聚合性單體成分可使用丨種或2種以上。 於使用放射線硬化型黏著劑（或能量射線硬化型黏著劑） 作為黏著劑之情形時，作為放射線硬化型黏著劑（組合 物），例如可列舉：使用於聚合物側鏈或主鏈中或主鏈末 端具有自由基反應性碳-碳雙鍵之聚合物作為基底聚合物 之内在型放射線硬化型黏著劑、或於黏著劑中調配有紫外 線硬化性之單聽成分或低聚物成分之放射線硬化型黏著劑 等。又，於使用熱膨脹性黏著劑作為黏著劑之情形時，作 為熱膨脹性黏著劑’例如可列舉：含有黏著劑與發泡劑 (尤其是熱膨脹性微球體）之熱膨脹性黏著劑等。 於本發明令，於無損本發明效果之範圍内，於黏著劑層 16中亦可含有各種添加劑（例如黏著賦予樹脂、著色劑、 增黏劑、增量劑、填充劑、可塑劑、抗老化劑、抗氧化 劑、界面活性劑、交聯劑等）。 作為上述父聯劑，並無特別限制可使用公知之交聯 :。具體而言’作為交聯劑’可列舉：異氰酸酯系交聯 4 %氧系父聯劑、三聚氰胺系交聯劑、過氧化物系交聯 d除此以外，可列舉：尿素系交聯劑、金屬烷氧化物系 父聯齊|金屬螯合物系交聯劑 '金屬鹽系交聯劑、碳二酿 161814.doc •35- 201246409 亞胺系交聯劑、噚唑啉系交聯劑、 w 芄丙啶系交聯劑、胺系 交聯劑等，較佳為異氛酴系 兴虱馱s曰糸交聯劑或環氧系交聯劑。交 聯劑可早獨使用或組合2種以上倍用 口禋以上使用。再者，交聯劑之使 用量並無特別限制。 作為上述異氰酸§旨系交聯劑，例如可列舉：^•二異氛 酸乙二醋、Μ·伸丁基二異氰酸醋、以-六亞甲基二異氰 酸醋等低級脂肪族聚異氰酸酯類，·亞環戊基二異氰酸醋、 環己烷二異氰酸醋、異佛酮二異氰醆酿、氫化甲苯二異氰 酸酯、氫化二曱苯二異蔔西参陥笙t 卒共鼠敲§曰#知％族聚異氰酸酯類； 2,4-甲苯二異氰酸酯、2,6_甲苯二異氰酸酯、二苯基甲 烧二異氰酸醋、笨二亞甲基二異氛酸醋等芳香族聚異氛酸 醋類等，S外，亦可使用：三經甲基丙烧/甲笨二異氣酸 醋三聚物加成物[Nippon Polyurethane工業股份公司製造， 商品名「Coronate L」]、三經甲基丙院/六亞曱基二異氰 酸醋三聚物加成物[Nippon p〇lyurethane工業股份公司製 造，商品名「Co義te HL」]等。又，作為上述環氧系交 聯劑，例如可列舉：Ν，Ν，Ν，，Ν·_四縮水甘油基_間二甲苯二 胺、二縮水甘油基苯胺、1，3-雙（Ν，Ν_縮水甘油基胺基曱 基）¼己烷、1，6-己二醇二縮水甘油醚、新戊二醇二縮水甘 油醚、乙二醇二縮水甘油醚、丙二醇二縮水甘油醚、聚乙 二醇二縮水甘油醚、聚丙二醇二縮水甘油醚、山梨糖醇聚 縮水甘油醚、甘油聚縮水甘油醚、季戊四醇聚縮水甘油 醚、聚甘油聚縮水甘油醚、山梨糖醇酐聚縮水甘油醚、二 羥曱基丙烷聚縮水甘油醚、己二酸二縮水甘油蜡、鄰苯二 161814.doc •36· 201246409An—RS A2”, in tensile mode on the width of the sample: 10 2: length: 22.5 mm, sample thickness: 〇 2 coffee and frequency:! Under the condition of the 、 ...... 楗 楗 既 既 既 既 既 既 既 既 既 既 既 既 既 、 、 、 、 、 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I The light transmittance (visible light transmittance) (wavelength: 400 nm to 800 nm) is not particularly limited, and is, for example, preferably 20% or less (〇% to 20%/〇), more preferably ι〇〇/ The following (〇%~1〇%), particularly preferably 5°/. or less (0%~50/.). If the visible light transmittance of the film 14 for semiconductor back surface is greater than 20%, there is a The above-mentioned visible light transmittance (%) can be determined by the kind or content of the resin component of the film 14 for semiconductor back surface, the kind or content of the colorant (pigment or dye, etc.), or inorganic content. The visible light transmittance of the film 14 for semiconductor back surface can be measured as follows: that is, a film for semiconductor back surface film 14 having a thickness (average thickness) of 20 μm is produced. Next, a film for semiconductor back surface is used. 14, with the established intensity 'photo A visible light beam having a wavelength of 400 nm to 800 nm [device: a visible light generating device manufactured by Shimadzu Corporation (trade name: r Absorption SPECTRO PHOTOMETR)]), and measuring the intensity of the transmitted visible light line. Further, according to visible light The value of the visible light transmittance is obtained by transmitting the film W before and after the film for the back surface of the semiconductor, and the visible light transmittance of the film 14 for semiconductor back surface having a thickness of not more than 20 μη (0/〇; wavelength: From the value of 400 nm to 800 nm), the visible light transmittance (%; wavelength: 4 〇〇 nm to 800 nm) of the film 14 for semiconductor back surface having a thickness of 2 〇 μη is derived. Further, in the present invention, The visible light transmittance (%) in the case of the film 14 for the semiconductor back surface of the thickness of 2, but the film for semiconductor back surface of the present invention is not limited to a thickness of 2 μm. 14. Preferably, the moisture absorption rate is low. Specifically, the moisture absorption rate is preferably i% by weight or less, more preferably 〇8 by weight 161814.doc -28 - 201246409 〇/〇. Moisture absorption rate In the reflowing step, for example, a void or the like may be suppressed or prevented from being generated between the semiconductor back surface film 14 and the semiconductor element. Further, the above moisture absorption rate is used. The value calculated by changing the weight of the semiconductor back surface film 14 for 168 hours in a gas atmosphere having a temperature of 85 〇 c 'relative humidity 85% RH (Relative Humidlty), by containing a thermosetting resin. In the case where the film for semiconductor back surface is formed by the resin composition, the moisture absorption rate means a value of 168 hours for the film for semiconductor f-plane after heat curing in a gas atmosphere at a temperature of 85 t and a relative humidity of 85 β. Further, the above-mentioned moisture absorption rate can be adjusted, for example, by changing the amount of addition of the inorganic filler, as the film 14 for semiconductor back surface, and preferably has a small proportion of volatile matter: specifically, it is preferably a semiconductor after heat treatment. The loss rate (ratio of the amount of weight loss) of the film 14 for the back surface was 1 weight. /. Hereinafter, it is preferably 8% by weight or less. The heat treatment bar is, for example, a heating temperature of 250 ° C and a heating time of 1 hour. By marking the above, the laser marking property can be improved. Further, the rate of failure is set to 1% by weight to u φ. For example, it is also possible to suppress or prevent the yield on the flip chip type semiconductor device in the reflow step, for example, by adding an amount of the above-mentioned weight loss inorganic substance. Further, the production of the semiconductor back surface film 14 is formed by the crack formation of 3 = reflow soldering; the resin group of the curable resin means a heating temperature of 250., heating time: two hours, the above The heat-curing (peeling layer 12) under the condition f of heating the film for semiconductor back surface after the weight loss rate is 161814.doc.29·201246409 As the peeling layer 12, for example, a paper-based substrate such as paper can be used; , non-woven fabric, wool drum, mesh, and other fiber-based substrates; metal-based substrates such as metal enamel and metal plates; plastic-based substrates such as plastic film or sheet; rubber-based substrates such as rubber sheets; A suitable sheet such as a foam such as a material or a laminate (especially a laminate of a plastic substrate and another substrate, or a laminate of plastic films (or sheets)), etc., is used in the present invention. As the substrate, a plastic film or sheet can be preferably used. A rubber-based substrate. Examples of the material of the plastic material include a olefinic resin such as polyethylene (P〇]yEthylene, PE), polypropylene (PP), and an ethylene-propylene copolymer; - Ethylene Vinyi Acetate (EVA), ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth) acrylate (random, alternating) copolymer, etc. a copolymer of ethylene as a monomer component; a polyethylene terephthalate (ΡΕτ), a polyethylene naphthalate (PEN), a polybutylene terephthalate (PBT) or the like; Acrylic resin; polyethylene (p〇lyVinyl Chloride 'PVC); polyurethane; polycarbonate; polyphenylene sulfide (PPS); polyamine (nylon), fully aromatic polyfluorene Amidoxime resin such as amine (aromatic polyamine); polyetheretherketone (p〇lyEther Ether Ketone 'PEEK); polyimine; polyether quinone; polyethylene glycol; ABS (Acrylonitrile-Butadiene- Styrene, acrylonitrile-butadiene-styrene copolymer; fiber Resin resin; polyoxyxylene resin; fluororesin. As a material of the release layer 12, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film may be used in an unextended manner, and it may be seen that 1618t4.doc -30· 201246409 The use of the uniaxial or biaxial extension processor β-peeling layer 12 can be appropriately selected for the same or different types of use, and it can be seen that a plurality of types of mixing are required. In order to facilitate the peeling of the peeling layer 12 by attaching the semiconductor wafer 20 or the dicing ring 22 to the film 14 for back surface, X Å may be subjected to a peeling treatment. Further, in order to impart an antistatic function to the release layer 12, a vapor deposition layer containing a conductive material having a thickness of about 3 Å to 500 Å such as a metal, an alloy or the like may be provided on the release layer 12. The release layer 12 may be a single layer or a multilayer of two or more. The thickness of the peeling layer 12 (the total thickness in the case of the laminated body) is not particularly limited, and may be appropriately selected depending on the strength, flexibility, purpose, and the like, and is usually, for example, 1000 μm or less (for example, i μηι 1 1〇). 〇〇μηη), preferably 10 μm to 500 μm, further preferably 2 〇μηη to 3 〇〇μηι, and more preferably about ηηι to 200 μπι, but is not limited thereto. Further, various additives (coloring agents, fillers, plasticizers, anti-aging agents, antioxidants, surfactants, flame retardants, etc.) may be contained in the release layer 12 within the range not impairing the effects of the present invention and the like. (Ring Adhesive Layer 16) The adhesive layer 16 is formed by an adhesive and has adhesiveness. There is no limitation on such an adhesive, and it can be appropriately selected from known adhesives. Specifically, as an adhesive, for example, an acrylic-based adhesive, a rubber-based adhesive, an ethylene-based steroid-based toxic agent, a polyoxo-based adhesive, a polyester-based adhesive, and a poly A guanamine-based adhesive, a urethane-based adhesive, a fluorine-based adhesive, a styrene-diene block copolymer-based adhesive, and a reddening point in the adhesives. The hot-melt-resin resin of the following C. I6I814.doc 201246409 is a known adhesive such as a modified adhesive (see, for example, 曰本八利特开昭56_61468, Japanese Patent Laid-Open No. 61-174857, Japan) In the case of the above-mentioned characteristics, an adhesive having the above characteristics is appropriately selected in the Japanese Patent Laid-Open Publication No. SHO63-17981, and the like. Using X ’ as an adhesive, you can also use a radiation-curing adhesive (or an energy ray-curing type toxic agent), and sticking it with money! . The adhesive may be used singly or in combination of two or more. As the above-mentioned adhesive, an acrylic adhesive or a rubber adhesive can be preferably used, and an acrylic adhesive is particularly preferable. An acrylic adhesive which uses one or two or more kinds of alkyl (meth)acrylates as a monomer component (homopolymer or copolymer) as a base polymer is used as the acrylic adhesive. Agent. Examples of the (mercapto)acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include methyl (meth)acrylate, ethyl (meth)acrylate, (propyl)propyl acrylate, and (meth)acrylic acid. Isopropyl ester, butyl (meth) acrylate, isobutyl (meth) acrylate, second butyl (meth) acrylate, second butyl (meth) acrylate, amyl (meth) acrylate , (mercapto) hexyl acrylate, (decyl) heptanoyl acrylate, (decyl) octyl acrylate, (mercapto) acrylate 2-ethylhexyl ester, (decyl) isooctyl acrylate , (fluorenyl) decyl acrylate, isodecyl (decyl) acrylate, decyl acrylate, isodecyl acrylate, undecyl (decyl) acrylate, (methyl) Dodecyl acrylate, tridecyl (decyl) acrylate, tetradecyl (decyl) acrylate, fifyl acrylate (decyl) acrylate, hexadecyl (decyl) acrylate , (decyl)heptadecyl acrylate, octadecyl (decyl) acrylate, (fluorenyl) propyl I61814.doc -32- 201246409 acid nineteen burning brewing group, (Yue-yl) acrylic acid brewing eicosyl (meth) acrylic acid alkyl vinegar. As the alkyl (meth)acrylate, a (meth)acrylic acid vinegar having an alkyl group having 4 to 18 carbon atoms is preferred. Further, the alkyl group of the (meth)acrylic acid ester may be either linear or branched. Further, in order to improve cohesive force, heat resistance, crosslinkability, and the like, it is also necessary to contain the other monomer component (copolymerizable single) which is copolymerizable with the above (meth)acrylic acid group. The unit corresponding to the body composition). Examples of such a copolymerizable monomer component include (mercapto)acrylic acid (acrylic acid, mercaptoacrylic acid), carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, maleic acid, and antibutene. a dibasic monomer such as a diacid or a crotonic acid; an acid anhydride group-containing monomer such as maleic anhydride or itaconic anhydride; a hydroxyethyl (meth)acrylate; a hydroxypropyl (meth)acrylate; Base) hydroxybutyl acrylate, hydroxyhexyl (meth) acrylate, hydroxyoctyl (meth) acrylate, hydroxy decyl (meth) acrylate, hydroxy lauryl (meth) acrylate, methyl propyl acid ( 4-hydroxymethylcyclohexyl) decyl ester or the like containing a monomer, stupid ethylene, acid, dipropyl acid, 2-(methyl) acrylamide 2 - methyl propane sulfonic acid, a acrylamide-propanesulfonic acid, a sulfopropyl (meth) acrylate, an acid-containing monomer such as a (meth) propylene oxy-naphthoic acid; a phosphoric acid 2-containing ethyl propyl decyl ester Acid-filling monomer; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) propylene (n-substituted) guanamine monomer such as decylamine, N-hydroxydecyl (decyl) acrylamide, N-hydroxymercaptopropane (meth) acrylamide, etc.; aminoethyl (meth) acrylate , (mercapto)acrylic acid N,N-diguanidinyl ethyl ester, (mercapto)acrylic acid tert-butylaminoethyl ester (mercapto)acrylic acid aminoalkyl ester monomer; (mercapto) propylene Acid methoxyethyl ester, 161814.doc -33· 201246409 (fluorenyl) ethoxyethyl acrylate (alkyl) acrylate alkoxyalkyl ester monomer; acrylonitrile, methacrylonitrile and other cyano groups Acrylate monomer; (fluorenyl) acrylate acrylic acid-containing monomer such as styrene glycidyl ester; styrene monomer such as styrene or α-mercaptostyrene; vinyl acetate, vinyl propionate, etc. a dilute ester monomer; an olefin monomer such as isoprene, butadiene or isobutylene; a vinyl ether monomer such as vinyl ether; Ν-vinylpyrrolidone, mercaptovinylpyrrolidone, vinylpyridine, Vinyl piperidone, vinyl pyrimidine, vinyl piper, vinyl. Nitrogen-containing monomer such as specific tillage, vinyl D ratio, vinyl imidazole, vinyl carbazole, vinyl morpholine, N-vinyl carbamide, ... ethylene hexylamine; N-cyclohexyl Butylenediamine, N-isopropyl cis-butyl diimide, N-lauryl cis-butyl diimide, N-phenyl maleimide, etc. Amine monomer; 曱 曱 醯 醯 醯 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、醯 ( ( 环 环 环 环 环 环 环 环 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( , Ν_(fluorenyl) propylene aryl _ cardinyl hexamethylene butyl quinone imine, Ν _ (methyl) propyl _ _ 8 oxy octamethyl butyl quinone diimide Amine monomer; polyethylene glycol (meth) acrylate vinegar, polypropylene glycol (mercapto) acrylic acid vinegar, decyloxyethylene glycol (meth) acrylate vinegar, methoxy polypropylene glycol (methyl a glycolic acid acetonitrile monomer such as acrylic acid; (meth) acrylic acid tetrahydro hydrazine; Acetate vinegar, acrylonitrile-containing monomer having a heterocyclic ring, a functional atom, a cerium atom, etc.; a hexamethylene glycol di(methyl) Acrylic vinegar, (poly)ethylene glycol di(meth)acrylic acid vinegar, (poly)propylene glycol di(meth)acrylic acid 16i8I4.doc -34· 201246409 ester, neopentyl glycol di(meth)acrylate, Pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy acrylate, polyester acrylate A polyfunctional monomer such as an amino phthalate acrylate, a divinyl styrene, a butyl bis(decyl) acrylate, or a hexyl hexyl acrylate. These copolymerizable monomer components can be used in the form of two or more kinds. When a radiation curable adhesive (or an energy ray-curable adhesive) is used as the adhesive, the radiation-curable adhesive (composition) may, for example, be used in a polymer side chain or a main chain or in the main chain. Radiation hardening of an endogenous radiation-curing adhesive having a polymer having a radical-reactive carbon-carbon double bond at the end of the chain as a base polymer, or a single-tone component or an oligomer component having an ultraviolet curable property in an adhesive Type of adhesive, etc. In the case of using a heat-expandable pressure-sensitive adhesive as the heat-adhesive adhesive, for example, a heat-expandable pressure-sensitive adhesive containing an adhesive and a foaming agent (especially, heat-expandable microspheres) may be mentioned. In the invention, the adhesive layer 16 may also contain various additives (for example, adhesion-imparting resin, coloring agent, tackifier, extender, filler, plasticizer, anti-aging) within the scope of the effect of the present invention. Agents, antioxidants, surfactants, crosslinkers, etc.). As the above-mentioned parent agent, there is no particular limitation that known cross-linking can be used: Specific examples of the "crosslinking agent" include an isocyanate-based crosslinked 4% oxygen-based parent-linked agent, a melamine-based crosslinking agent, and a peroxide-based cross-linking d. Metal alkoxides are parental | metal chelate crosslinkers 'metal salt crosslinkers, carbon dimers 161814.doc •35- 201246409 imine crosslinkers, oxazoline crosslinkers, w An aziridine-based crosslinking agent, an amine-based crosslinking agent, or the like is preferably a hetero-neutral sulfonium-based crosslinking agent or an epoxy-based crosslinking agent. The cross-linking agent can be used alone or in combination of two or more times. Further, the amount of the crosslinking agent to be used is not particularly limited. Examples of the above-mentioned isocyanate-based cross-linking agent include low-grade grades such as diiso-succinic acid ethylene diacetate, hydrazine-tert-butyl diisocyanate, and hexamethylene diisocyanate. Aliphatic polyisocyanates, cyclopentylene diisocyanate, cyclohexane diisocyanate, isophorone diisocyanate, hydrogenated toluene diisocyanate, hydrogenated diterpene dioxicillin笙t 共 共 共 曰 曰 知 知 # know % polyisocyanate; 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, diphenyl ketone diisocyanate, stupid dimethylene diiso Aromatic polyisocyanic acid vinegar such as sulphuric acid vinegar, etc., can also be used: trimethyl methacrylate / phenyl succinyl acid vinegar terpolymer adduct [manufactured by Nippon Polyurethane Industrial Co., Ltd., commodity "Coronate L"], ternary methyl propyl ketone / hexamethylene diisocyanate vinegar terpolymer adduct [manufactured by Nippon p〇lyurethane Industrial Co., Ltd., trade name "Coyi te HL"]. Moreover, examples of the epoxy-based crosslinking agent include ruthenium, osmium, iridium, osmium tetraglycidyl-m-xylylenediamine, diglycidylaniline, and 1,3-bis(anthracene, Ν_glycidylamino fluorenyl) 1⁄4 hexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, poly Ethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether , dihydroxydecyl propane polyglycidyl ether, adipic acid diglycidyl wax, o-phenyl 161814.doc •36· 201246409

甲酸二縮水甘油B @ D S異氰尿酸三縮水甘油基-三(2-羥基乙 基）δ曰、間本二胁-夕―^ 酚一細水甘油醚、雙酚5_二縮水甘油醚， 除此以外，可夺丨與认八， 樹脂等。 +於刀子内具有2個以上環氧基之環氧系 再者，於本發明中， 紫外線等之照射實施交 可使用交聯劑並且利用 劑。 亦可使用交聯劑並且利用電子束或 聯處理而代替使用交聯劑。又，亦 加熱貫施交聯處理而代替使用交聯 點著劑層16例如可利用如下之慣用方法而形成：該方法 係將黏著劑（感壓接著劑）與視需要之溶劑或其他添加劑等 混合而形成為片狀之層。具體而言，例如可藉由如下方法 而形成黏耆劑層16 :將含有黏著劑及視需要之溶劑或其他 添加劑的混合物塗佈於半導體背面用膜14上之方法、於適 當之分隔件(剝離紙等)上塗佈上述混合物而形成黏著劑層 16並將其轉印（移著）至半導體背面用膜14上之方法等。 黏著劑層16之厚度並無特別限制，例如為5 μΐΏ〜300 μηι(較佳為5 μηι〜200 _，進而較佳為5 μηι〜1〇〇 _，尤佳 為7 μΐΏ〜5〇 μΐΏ)左右。若點著劑層16之厚度為上述範圍 内’則可發揮適度之黏著力。再者，黏著劑層16可為單層 或多層之任一者。 (覆蓋襯墊18) 覆蓋襯墊18係於貼合半導體晶圓2 〇及切晶環2 2時加以剝 離。作為覆蓋襯墊18，亦可使用聚乙烯、聚丙# '或藉由 氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行表 161814.doc •37· 201246409 面塗佈之塑膠膜（聚對苯二曱酸乙二酯等）或紙等。再者， 覆蓋襯墊18可藉由先前公知之方法而形成。又’覆蓋襯墊 1 8之厚度等亦無特別限制。 作為附有黏著劑層之半導體背面用膜10之厚度（於具有 覆蓋襯墊18之情形時，為剝離層12、半導體背面用膜14、 黏著劑層16、覆蓋襯墊18之總厚度，於不具有覆蓋襯墊18 之情形時，為剝離層12、半導體背面用膜14、黏著劑層i 6 之總厚度）’例如可自8 μιη〜1500 μηι之範圍内選擇，較佳 為20 μηι 850 μπι(進而較佳為3 1 μηι〜500 μιη，尤佳為47 μπι〜3 3 0 μιη) 〇 (附有黏著劑層之半導體背面用膜10之製造方法） 針對本實施形態之附有黏著劑層之半導體背面用膜10之 裝w方法，以圖丨及圖2所示之附有黏著劑層之半導體背面 用膜1〇為例進行說明。首先，剝離層12可藉由先前公知之 製膜方法而製膜。作為該製膜方法’例如可例示：壓延製 Γτ镇^機溶劑中之料法、於密閉系統中之充氣擠出 /鑄械擠出法、共擠出法、乾式層壓法等。 形層12上塗佈用以形成半導體背面_之 實施加^ 燥（於需要熱硬化之情料日夺，視需要 貫把加熱處理而將其乾^ 為塗佈方式，可列舉：輕塗：丰導體“用膜14。作 等。再者，於將用以m 塗佈、凹版印刷塗佈 佈於對表面進行剝離處理之 用膜14之形成材料塗 用膜Μ後，亦可將該半導面i而形成半導體背面 者面用臈14轉印於剝離層12 I61814.doc -38· 201246409 上。藉此，可於剝離層u上形成半導體背面用膜14。 另一方面，將黏著劑組合物以乾燥後之厚度成為既定厚 度之方式塗佈於剝離紙上，進而於既定條件下進行乾燥 (視需要進行加熱交聯）而形成塗佈層。藉由將該塗佈層轉 印於上述半導體背面用膜14上而將黏著劑層丨6形成於半導 體背面用膜14上。再者，藉由於上述半導體背面用膜14上 直接塗佈黏著劑組合物後於既定條件下進行乾燥，亦可將 黏著劑層16形成於半導體背面用膜丨4上。 其次，自黏著劑層16側起，將黏著劑層16及半導體背面 用膜14衝壓為與切晶環22外徑對應之形狀。此時，使剝離 層12成為未被衝壓之程度。其後，將經衝壓之黏著劑層“ 及半導體背面用膜14之外側部分自剝離層12剝離。 其次，自黏著劑層16側起，於與切晶環22内徑對應之部 位對黏著劑層16進行衝壓。此時，使半導體背面用膜14成 為未被衝壓之程度。其後，將經衝壓之黏著劑層16之内側 部分剝離。 其次，可將藉由先前公知之方法所製作之覆蓋襯墊18自 黏著劑層16側起積層而獲得附有黏著劑層之半導體背面用 膜10。 再者，本發明之附有黏著劑層之半導體背面用膜之製造 方法並不限定於上述方法，例如亦可預先分別製造與半導 B曰圓之外徑對應之形狀之半導體背面用膜、及與根據切 曰曰環對應之形狀之環狀黏著劑層，並將該等積層。 (半導體晶圓） I6l8I4.doc -39- 201246409 、為半導體曰曰圓，只要為公知或慣用之半導體晶圓，則 、、’·…特别限制’可自各種素材之半導體晶圓中適當地選擇 使用。於本發明中’作為半導體晶圓，可較佳地使用石夕晶 圓。 (半導體裝置之製造方法） 以下，針對本實施形態之半導體裝置之製造方法，一面 圖圖8面進行說明。圖3〜圖8係表示本實施形態之 使用附有黏著劑層之半導體背面用膜之半導體裝置之製造 方法的戴面模式圖。 本實施形態之半導體褒置之製造方法為使用附有黏著劑 :之半導體背面用膜〗〇之半導體裝置之製造方法。具體而 言，其至少具備如下步驟：步驟A，其準備附有黏著劑層 之半導體背面用膜10 ;步驟B，其於較黏著劑層16更内侧 之未積層有黏著劑層16的覆晶型半導體背面用膜Μ上貼附 半導體晶圓20 ;步驟c ’其於黏著劑層16上貼附切晶環 及步驟D’於上述步驟B及上述步驟C後，對覆晶型半 導體背面用膜14進行雷射標記。 [步驟A(附有點著劑層之半導體背面用膜之準備）] 首先，準備附有黏著劑層之半導體背面用膜1〇(參照圖 1、圖2)。附有黏著劑層之半導體背面用膜ι〇可藉由上述 附有黏著劑層之半導體背面用膜1G之製造方法而製曰造。L [步驟B(安裝步驟）]Diglycidyl benzoate B @ DS isocyanuric acid triglycidyl-tris(2-hydroxyethyl)δ曰, 本本二胁-夕——^ Phenol monoglyceride, bisphenol 5 diglycidyl ether, In addition to this, you can win and recognize eight, resin and so on. + Epoxy system having two or more epoxy groups in the knives. In the present invention, a crosslinking agent and a usable agent can be used for the irradiation of ultraviolet rays or the like. It is also possible to use a crosslinking agent and to use an electron beam or a combination treatment instead of using a crosslinking agent. Further, the cross-linking treatment may be carried out instead of using the cross-linking agent layer 16, for example, by a conventional method in which an adhesive (pressure-sensitive adhesive) and an optional solvent or other additives are used. Mixed to form a sheet-like layer. Specifically, for example, the adhesive layer 16 can be formed by applying a mixture containing an adhesive and, if necessary, a solvent or other additives to the film for semiconductor back surface 14, in a suitable separator ( A method of applying the above mixture to form the adhesive layer 16 and transferring (moving) the adhesive layer 16 onto the film for semiconductor back surface 14 or the like. The thickness of the adhesive layer 16 is not particularly limited, and is, for example, 5 μΐΏ to 300 μηι (preferably 5 μηι to 200 _, and further preferably 5 μηι 1 to 1 〇〇, and particularly preferably 7 μΐΏ to 5 μμΐΏ). about. If the thickness of the dot layer 16 is within the above range, an appropriate adhesion can be exerted. Further, the adhesive layer 16 may be either a single layer or a plurality of layers. (Cover Pad 18) The cover pad 18 is peeled off when the semiconductor wafer 2 and the dicing ring 2 2 are bonded. As the cover liner 18, polyethylene, polypropylene, or a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester release agent may be used. Table 16184.doc •37·201246409 Surface-coated plastic film (polyethylene terephthalate, etc.) or paper. Further, the cover liner 18 can be formed by a previously known method. Further, the thickness of the cover pad 18 is not particularly limited. The thickness of the film 10 for semiconductor back surface to which the adhesive layer is attached (when the cover pad 18 is provided, the total thickness of the peeling layer 12, the film for semiconductor back surface 14, the adhesive layer 16, and the cover liner 18 is In the case where the spacer 18 is not provided, the total thickness of the peeling layer 12, the film for semiconductor back surface 14, and the adhesive layer i 6 can be selected, for example, from 8 μm to 1500 μm, preferably 20 μm 850 Μπι (further preferably 3 1 μηι to 500 μηη, particularly preferably 47 μπι to 3 3 0 μιη) 〇 (Manufacturing method of the film 10 for semiconductor back surface with an adhesive layer) Adhesive attached to the present embodiment The method of mounting the film 10 for the semiconductor back surface of the layer will be described by way of example with reference to the film 1 半导体 for the semiconductor back surface with the adhesive layer shown in FIG. First, the release layer 12 can be formed into a film by a conventionally known film formation method. As the film forming method, for example, a material method in a solvent for rolling, a gas-filling/casting extrusion method in a closed system, a co-extrusion method, a dry lamination method, and the like can be exemplified. The layer 12 is coated on the surface of the semiconductor to form a semiconductor back surface. (In the case where heat hardening is required, the heat treatment may be carried out as needed, and the coating method is as follows: light coating: The conductive conductor "is a film 14 or the like. Further, the film may be coated with a film for forming the film 14 for the application of the m coating and the gravure coating to the surface. The surface of the semiconductor back surface is formed by transfer onto the release layer 12 I61814.doc -38·201246409. Thereby, the film for semiconductor back surface 14 can be formed on the release layer u. On the other hand, the adhesive is applied. The composition is applied to the release paper so that the thickness after drying becomes a predetermined thickness, and further dried under the predetermined conditions (heat-crosslinking if necessary) to form a coating layer. The adhesive layer layer 6 is formed on the semiconductor back surface film 14 on the semiconductor back surface film 14. Further, by applying the adhesive composition directly to the semiconductor back surface film 14, the film is dried under predetermined conditions. The adhesive layer 16 can be formed in the semi-conductive Next, the adhesive layer 16 and the semiconductor back surface film 14 are pressed from the side of the adhesive layer 16 to have a shape corresponding to the outer diameter of the dicing ring 22. In this case, the peeling layer 12 is made unnecessary. After that, the stamped adhesive layer "and the outer side portion of the film for semiconductor back surface 14 are peeled off from the peeling layer 12. Next, from the adhesive layer 16 side, it corresponds to the inner diameter of the dicing ring 22 The adhesive layer 16 is pressed at the portion. At this time, the film for semiconductor back surface 14 is not pressed. Thereafter, the inner portion of the stamped adhesive layer 16 is peeled off. Next, it can be known from the prior art. The cover liner 18 produced by the method is laminated from the side of the adhesive layer 16 to obtain a film 10 for semiconductor back surface with an adhesive layer. Further, the method for producing a film for semiconductor back surface with an adhesive layer of the present invention The method is not limited to the above, and for example, a film for semiconductor back surface having a shape corresponding to the outer diameter of the semiconductive B 曰 circle and an annular adhesive layer having a shape corresponding to the dicing ring may be separately manufactured and These layers. (Half Wafer) I6l8I4.doc -39- 201246409 For the semiconductor wafer, as long as it is a well-known or customary semiconductor wafer, the '...special restrictions' can be appropriately selected from semiconductor wafers of various materials. In the present invention, 'the semiconductor wafer can be preferably used as the semiconductor wafer. (Manufacturing method of semiconductor device) Hereinafter, a method of manufacturing the semiconductor device of the present embodiment will be described with reference to FIG. 3 to FIG. 8 are schematic diagrams showing the wearing method of the semiconductor device using the film for semiconductor back surface with the adhesive layer according to the embodiment. The method for manufacturing the semiconductor device of the present embodiment is to use an adhesive: A method for manufacturing a semiconductor device for a semiconductor back surface film. Specifically, it has at least the following steps: Step A, which prepares the film 10 for semiconductor back surface to which the adhesive layer is attached; and Step B, which is a flip chip which is laminated on the inner side of the adhesive layer 16 with the adhesive layer 16 uncoated. The semiconductor wafer 20 is attached to the film for the back surface of the semiconductor; the step c' is attached to the adhesive layer 16 and the step D' is applied to the back surface of the flip chip after the step B and the step C. The film 14 is laser marked. [Step A (Preparation of film for semiconductor back surface with a coating layer)] First, a film 1 半导体 for semiconductor back surface to which an adhesive layer is attached is prepared (see FIGS. 1 and 2). The film for the back surface of the semiconductor to which the adhesive layer is attached can be produced by the above-described method for producing the film 1e for semiconductor back surface to which the adhesive layer is attached. L [Step B (Installation Step)]

其次’將設置於附有黏著劑層之半導體背面用膜1〇之半 體背面用膜Μ及黏著劑層16上之覆蓋襯墊18剝離，如圖 161814.doc 201246409 3戶斤i"~ 不，於以俯視時較黏著劑層16更内側之未積層有黏著 4層16之覆晶型半導體背面用膜14上貼附半導體晶圓π。 八體而σ，例如對於所輸送之附有黏著劑層之半導體背面 用膜10，';从:古士丄Α 〜垂直方向照射光（例如紅外線），基於透射率變 化之部位檢測半導體背面用膜14之位置後，於較黏著劑層 16更内側之未積層有黏著劑層16之覆晶型半導體背面用膜 上貼附半導體晶圓2Q。又’位置對準亦可藉由圖像識別 進行再者，此時，半導體背面用膜14處於未硬化 狀心（包括半硬化狀態）。χ，半導體背面用膜㈣貼合於 半導體晶圓20之背面。所謂半導體晶圓2()之背面，意指與 電路面相反側之面（亦稱為非電路面、非電極形成面等）。 貼合方法並無特別限定’較佳為藉由壓接之方法。壓接通 常係一面藉由壓接輥等推壓機構推壓一面進行。 [步驟C(切晶環貼附步驟）] "人如圖3所不’於與切日曰日環22對應之環狀黏著劑層 “貼附切曰曰％ 22。具體而言，例如對於所輸送之附有黏 著Μ層之半導體背面用膜1〇沿垂直方向照射光(例如紅外 線）’基於透射率變化之部位檢測㈣劑層16之位置後， 層16上貼附切晶環22。再者’位置對準亦可藉由 ®像識別裝置而進行。再者’步驟Β與步驟c之順序亦可 相反。 [步驟X(剝離層剝離步驟）] 其次，將剝離層12自半導體背面用膜U剝離。此時，切 晶環22係經由黏著劑層16而貼附於半導體背面用膜14上， 161814.doc -41 · 201246409 故而可防止於半導體背面用膜14上產生皺褶等。 [步驟D(雷射標記步驟）] 其次，如圖4所示，藉由照射雷射光24而對半導體背面 用膜I 4進行雷射標記 '雷射標記係對與半導體背面用膜μ 之貼附有半導體晶圓20之面相反側之面進行。具體而言， 例如對於所輸送之附有黏著劑層之半導體背面用膜丨〇沿垂 直方向照射光（例如紅外線），基於透射率變化之部位檢測 半導體背面用膜14之位置後，以該位置為基礎對既定位置 進行雷射標記。再者，位置對準亦可藉由圖像識別裝置而 進行。於終止上述步驟B及上述步驟c後之階段，半導體 晶圓20及半導體背面用膜14未單片化。因此，只要進行一 次半導體晶圓20及半導體背面用膜14之定位，則可對由該 附有半導體背面用膜14之半導體晶圓20所獲得之全部附有 半導體背面用膜14半導體晶片21進行雷射標記。結果，與 對單片化後之附有半導體背面用膜半導體晶片逐個地定位 而進行雷射標記之方法相比，可提高生產性。又，由於在 黏著劑層16上貼附切晶環22後（步驟（^灸）對半導體背面用 膜14進行雷射標記（進行步驟D)，故而於雷射標記之階段 貼附有切晶環22。因此，可將半導體背面用膜丨樣維持與 半導體晶圓之位置關係之狀態下確實地固定，可將雷射標 記時之標記定位之精度維持於較高。又，由於將剝離層U 剝離後（步驟X後）對半導體背面用膜14進行雷射標記（進行 步驟D) ’故而不存在雷射光散射至剝離層12上之情況。因 此，可進行精度較咼之雷射標記。雷射標記可利用公知之 161814.doc -42· 201246409 雷射標記裝置。作為雷射，可利用氣體雷射、固體雷射、 液體雷射等各種雷射。具體而言，作為氣體雷射，並益特 別限制，可利用公知之氣體雷射，較佳為二氧化碳雷射 (C〇2雷射）、準分子雷射（ArF雷射、㈣雷射、雷射、 、雷射等）。又，作為固體雷射，並無特別限制，可利用 公知之固體雷射’較佳為YAG雷射（Nd : yAg雷射等）、 YV04雷射。 再者，於本實施形態中，針對於將剝離層丨2剝離後進行 雷射標記之情形進行說明，但亦可於未剝離剝離層Η之情 况下進行雷射標記，其後（例如於下述切割膠帶之貼附步 驟前）進行剝離《於該情形時，可更佳地防止於半導體背 面用膜14上產生皺褶等。 [步驟E(切割膠帶貼附步驟 /、人如圖5所示’於半導體背面用膜14上貼附切割膠 V 3。作為切割膠帶3，可使用於基材3丨上積層有黏著劑層 32之先則公知者《作為基材3丨之材料，並無特別限定例 如可使用與剝離層12相同者。又，作為黏著劑層32之材 料，並無特別限定，例如可使用與黏著劑層16相同者。再 者，切割膠帶之積層構造並不限定於如切割膠帶3之積層 構U，可較佳地使用先前之公知者。上述貼附係以與半導 體背面用膜14之貼附有半導體晶圓2〇之面相反側之面與切 膠帶3之黏著劑層32作為貼合面而進行。貼合方法並無 特別限定，較佳為藉由壓接之方法。壓接通常係一面藉由 塵接輕等推壓機構推壓一面進行。 16l8l4.doc -43· 201246409 [步驟F(切割步驟）] 其次，如圖6所示，將丰逡 主道μ〜 牛導體日日圓2〇與實施雷射標記之 Λ Φ用膜14一同切割。藉此’將半導體晶圓20切割 為：定尺寸並使其單片化(小片化)而製造半導體晶片I 切割例如係依據常規方法 , 凌自+導體晶圓20之電路面側起進 订。又，於本步驟中，例如可採用至基材31之中部為止進 仃切割之稱為全切的切割方式等。作為於本步驟中所使用 之切割裝置，並無特別限定，可使用先前之公知者。又， 由於半導體晶_係以更優異之密接性接㈣定於半導體 旁面用膜14上’故而可抑制晶片缺損或晶片飛起，並且亦 可抑制半導體晶圓20之破損。再者，若藉由含有環氧樹脂 之樹脂組合物而形成半導體背面用膜"，則即便藉由切割 而切斷’亦可抑制或防止於其切截面產生半導體背面用膜 劑層）之糊劑露出。結果可抑制切截面彼此再附著（黏 連），可進一步良好地進行下述讀取。 損 再者’於進行切割膠帶3之延伸之情形時，該延伸可使 用先前公知之延伸裝置而進行。延伸裝置具有可經由切晶 環22而將切割膠帶3向下部壓下之環狀之外環、及直徑較 外環小且支持切割膠帶3之内環。藉由該延伸步驟，可於 -述之讀取步驟t防止相鄰之半㈣晶片彼此㈣而破 [步驟G(讀取步驟）] 一為了回收固定於切割膠帶3上之半導體晶片2ι，如圖頂 不’進仃半導體晶片21之讀取並將半導體晶片幻與半導體 I61814.doc • 44 - 201246409 背面用膜14一同自切割膠帶3剝離。作為讀取之方法並無 特別限定，可採用先前公知之各種方法。例如可列舉藉由 針將各個半導體晶片21自切割膠帶3之基材31側頂出，並 利用讀取裝置讀取所頂出之半導體晶片21之方法等。再 者，所讀取之半導體晶片21之背面係藉由半導體背面 14而保護。 [覆晶連接步驟] 如圖8所示，所讀取之半導體晶片21係藉由覆晶接合方 式（覆晶安裝方式）而固定於基板等被接著體上。具體而 言’以半導體晶片21之電路面（亦稱為正面、電路圖案形 成面、電極形成面等）與被接著體6對向之形態，依據常規 方法將半導體晶片21固定於被接著體6上。例如藉由一面 使形成於半導體晶片21之電路面側之凸塊51與黏附於被接 著體6之連接墊上之接合用導電材料（焊錫等）61接觸並推壓 一面使導電材料熔融，可確保半導體晶片21與被接著體6 之電性導通，可使半導體晶片21固定於被接著體6上（覆晶 接合步驟）。此時，於半導體晶片21與被接著體6之間形成 空隙’該空隙間距離通常為30 μηι〜3〇〇 μΠΊ左右。再者，較 為重要的是將半導體晶片21覆晶接合（覆晶連接）於被接著 體6上後，對半導體晶片21與被接著體6之對向面或間隙進 行清洗，並於該間隙填充密封材料（密封樹脂等）而密封。 作為被接著體6，可使用導線架或電路基板（配線電路基 板等）等各種基板。作為此種基板之材質，並無特別限 定，可列舉陶瓷基板或塑膠基板。作為塑膠基板，例如可 161814.doc •45· 201246409 列舉’ ί衣氧基板、雙順丁烯二醯亞胺三畊基板、聚醯亞胺 基板等。 於覆晶接合步驟中’作為凸塊或導電材料之材質，並無 特别限疋例如可列舉：錫_紹系金屬材料、錫·銀系金屬 材料、錫-銀.鋼系金屬材料、錫·辞系金屬材料、錫·辞-祕 系金屬材料等焊錫類(合金）、或金系金屬材料、銅系金屬 材料等。 再者於覆曰Β接合步驟中，使導電材料炫融而將半導體 晶片21之電路面側之凸塊與被接著體6表面之導電材料連 接作為。-亥導電村料炼融時之溫度，通常成為·^左右 (例如减〜3GG°C)。藉由利用環氧樹脂等形成半導體背 面用膜14,可製成具有可 趙才 耐埶性者。 又接合步驟中之高溫之 雷 /較佳為對半導體晶片21與被接著體6之 =⑽_行清洗。作為❹該清洗之 洗液。半導體例如可列舉有機系清洗液或水系 洗及+導體是面用膜14較佳為使用 劑性且對於該等清洗液實質…有：解广先液之耐 時’可使用各種清洗液作騎洗液，^特者。於該情， 可藉由先前之方法進行清洗。 …、*特別之清洗液 [密封步驟] 其次，進行用以密封經覆晶 著體6之間的間隙之密封步驟 而進行。作為此時之密封條件 接合之半導體晶片21與被接 :密封步驟係使用密封樹脂 、' ’’’、特別限定，通常可藉 I6I814.doc -46 - 201246409 由於175t下進行60秒〜90秒之加熱而進行密封樹脂之熱硬 化，但本發明並不限定於此，例如可於i 6 5 〇c〜1 8 5 下進 行數分鐘之固化。於該步驟中之熱處理中，不僅使密封樹 脂熱硬化而且亦可同時地進行半導體背面用膜14之熱硬 化。藉此，密封樹脂及半導體背面用膜14之兩者均隨著熱 硬化之進行而硬化收縮。結果，因密封樹脂之硬化收縮而' 施加於半導體晶片21之應力可藉由半導體背面用膜⑷更化 收縮而抵消或緩和《又，藉由該步驟，可使半導體背面用 膜14完全地或大致完全地熱硬化，可以優異之密接性貼合 於半導體元件之背面。進而，由於本發明之半導體背面: 膜14即便為未硬化狀態，亦可於該密封步驟時與密封材料 一同進行熱硬化，故而無需另外追加用以使半導體背面用 膜14熱硬化之步驟。 作為上述密封樹脂，只要為具有絕緣性之樹脂（絕緣樹 脂），則無特別限制，彳自公知之密封樹脂等密封材料中 適*地選擇使用’但更佳為具有彈性之絕賴脂。作為密 封樹脂，例如可列舉含有環氧樹脂之樹脂組合物等。作為 環氧樹脂，可列舉上述所例示之環氧樹脂等…作為利 用含有環氧樹脂之樹脂组合物的密封樹脂，作為樹脂成 分’除環氧樹脂以外’亦可含有環氧樹脂以外之执硬化性 樹脂(齡樹脂等)或熱塑性樹脂等。再者，作為齡樹脂，亦 可用作環氧樹脂之硬化劑，料此㈣樹脂，可列舉 所例示之酚樹脂等。 ' ❹附有㈣劑層之半導體背面賴H)所製造之半導體 16I814.doc -47- 201246409 裝置為以覆晶安裝方式安裝之半導體裝置，故而與以黏晶 安裝方式安裝之半導體裝置相比，成為薄型化、小髮化之 形狀。因此’可較佳地用作各種電子設備、電子零件或該 等之材料、構件。具體而言，作為利用本發明之覆晶安裝 之半導體裝置之電子設備’可列舉：所謂「行動電話」或 「PHS(PerS〇nal Handy_phGne加⑽，個人手持式電話系 統）」、小型電腦（例如所謂「PDA(Pers〇naiNext, the film for the back surface of the film for the back surface of the semiconductor with the adhesive layer is peeled off, and the cover liner 18 on the adhesive layer 16 is peeled off, as shown in Fig. 161814.doc 201246409 3 households i"~ no The semiconductor wafer π is attached to the overlying crystalline semiconductor back surface film 14 having the four layers 16 adhered to the inner side of the adhesive layer 16 in a plan view. Eight bodies and σ, for example, for the film 10 for semiconductor back surface to which the adhesive layer is applied, '; from: Gu Shi 〜 ~ vertical direction of light (for example, infrared light), for detecting the back surface of the semiconductor based on the change in transmittance After the position of the film 14, the semiconductor wafer 2Q is attached to the film for the flip-chip semiconductor back surface on which the adhesive layer 16 is not laminated on the inner side of the adhesive layer 16. Further, the positional alignment can be performed by image recognition. At this time, the film 14 for semiconductor back surface is in an uncured heart (including a semi-hardened state). Further, the film (4) for semiconductor back surface is bonded to the back surface of the semiconductor wafer 20. The back surface of the semiconductor wafer 2 () means a surface opposite to the circuit surface (also referred to as a non-circuit surface, a non-electrode forming surface, etc.). The bonding method is not particularly limited. It is preferably a method by pressure bonding. The pressure is normally applied while being pressed by a pressing mechanism such as a pressure roller. [Step C (Cleavage Ring Attachment Step)] " The person as shown in Fig. 3 does not 'attach the cut-off adhesive layer 22 to the ring-shaped adhesive layer 22. Specifically, for example, The dicing ring 22 is attached to the layer 16 after the film (1) is irradiated with light (for example, infrared ray) in the vertical direction by the film 1 半导体 with the adhesive enamel layer being irradiated, and the position of the (four) agent layer 16 is detected based on the change in transmittance. Furthermore, the 'position alignment can also be performed by the image recognition device. The order of the step Β and the step c can be reversed. [Step X (peeling layer peeling step)] Next, the peeling layer 12 is self-semiconducting. The back surface film U is peeled off. At this time, the dicing ring 22 is attached to the semiconductor back surface film 14 via the adhesive layer 16, and 161814.doc -41 · 201246409 can prevent wrinkles from occurring on the semiconductor back surface film 14. [Step D (Laser Marking Step)] Next, as shown in FIG. 4, the semiconductor back surface film I 4 is laser-marked by irradiating the laser light 24, the laser marking system pair and the semiconductor back surface film μ. The surface on the opposite side of the surface of the semiconductor wafer 20 is attached. Specifically, an example When the film for semiconductor back surface to which the adhesive layer is applied is irradiated with light (for example, infrared rays) in the vertical direction, the position of the film 14 for semiconductor back surface is detected based on the portion where the transmittance changes, and the position is determined based on the position. The laser marking is performed at the position. Further, the alignment may be performed by the image recognition device. The semiconductor wafer 20 and the film for semiconductor back surface 14 are not singulated at the stage after the termination of the above step B and the step c. Therefore, as long as the semiconductor wafer 20 and the semiconductor back surface film 14 are positioned once, the semiconductor wafer 21 for the semiconductor back surface film 14 is obtained by the semiconductor wafer 20 having the semiconductor back surface film 14 attached thereto. Laser marking is performed. As a result, the productivity can be improved as compared with the method of performing laser marking on the semiconductor wafer with the semiconductor back surface after singulation, and the film is attached to the adhesive layer 16. After the reticle 22 is attached (step (moulding)), the semiconductor back surface film 14 is laser-marked (step D), so that the dicing ring 22 is attached at the stage of the laser mark. Therefore, the semiconductor back surface film can be surely fixed in a state in which the film is maintained in a positional relationship with the semiconductor wafer, and the accuracy of marking positioning during laser marking can be maintained high. Further, since the peeling layer U is peeled off (Step X) Laser marking of the semiconductor back surface film 14 (step D) is performed. Therefore, there is no case where laser light is scattered onto the peeling layer 12. Therefore, a laser mark having a relatively high precision can be performed. The well-known 161814.doc -42· 201246409 laser marking device can be used. As the laser, various lasers such as gas laser, solid laser, liquid laser, etc. can be utilized. Specifically, as a gas laser, it is particularly useful. Limitations may be made using well-known gas lasers, preferably carbon dioxide lasers (C〇2 lasers), excimer lasers (ArF lasers, (four) lasers, lasers, lasers, etc.). Further, the solid laser is not particularly limited, and a known solid laser ray is preferably used as a YAG laser (Nd: yAg laser or the like) or a YV04 laser. Further, in the present embodiment, the case where the peeling layer 剥离2 is peeled off and the laser mark is performed will be described. However, the laser marking may be performed without peeling off the peeling layer ,, and thereafter (for example, under the In the case of the dicing tape, the peeling of the film for semiconductor back surface 14 can be more preferably prevented. [Step E (cutting tape attaching step/, as shown in Fig. 5], the cutting adhesive V3 is attached to the film 14 for semiconductor back surface. As the dicing tape 3, an adhesive layer may be laminated on the substrate 3 In the case of the adhesive material layer 32, the material of the adhesive layer 32 is not particularly limited. For example, the adhesive layer can be used. Further, the laminated structure of the dicing tape is not limited to the laminated structure U such as the dicing tape 3, and a conventionally known one can be preferably used. The above-mentioned attachment is attached to the film 14 for semiconductor back surface. The surface on the opposite side of the surface of the semiconductor wafer and the adhesive layer 32 of the cut tape 3 are used as the bonding surface. The bonding method is not particularly limited, and is preferably a method of pressure bonding. One side is pushed by the pushing mechanism such as dust and light. 16l8l4.doc -43· 201246409 [Step F (cutting step)] Next, as shown in Fig. 6, the main road of the 逡 〜 〜 ~ 牛 牛 日 日 日 日 日 日〇With the implementation of the laser marking Φ Φ is cut with the film 14 The conductor wafer 20 is cut into: singulated and singulated (small-sized) to manufacture a semiconductor wafer. The dicing is performed, for example, according to a conventional method, from the side of the circuit surface of the +conductor wafer 20. In the step, for example, a cutting method called full cutting, which is used for cutting into the middle portion of the base material 31, or the like can be used. The cutting device used in the present step is not particularly limited, and a conventionally known one can be used. Since the semiconductor crystal is bonded to the semiconductor side film 14 with more excellent adhesion (four), wafer defects or wafer flying can be suppressed, and the semiconductor wafer 20 can be suppressed from being damaged. When a film for a semiconductor back surface is formed from a resin composition containing an epoxy resin, the paste which is cut by cutting can prevent or prevent the film layer for semiconductor back surface from being formed in a cross section thereof from being exposed. As a result, it is possible to suppress the cross-sections from adhering to each other (adhesion), and the following reading can be performed more satisfactorily. In the case where the extension of the dicing tape 3 is carried out, the extension can be carried out using a previously known stretching device. The extension device has an annular outer ring that can press the dicing tape 3 downwardly via the dicing ring 22, and an inner ring that is smaller in diameter than the outer ring and supports the dicing tape 3. By the extending step, the adjacent half (four) wafers can be prevented from being broken by each other in the reading step t (step G (reading step)] - in order to recover the semiconductor wafer 2 ι fixed on the dicing tape 3, such as The top of the figure does not enter the semiconductor wafer 21 and the semiconductor wafer is detached from the dicing tape 3 together with the film 14 of the semiconductor I61814.doc • 44 - 201246409. The method of reading is not particularly limited, and various methods known in the art can be employed. For example, a method in which each semiconductor wafer 21 is ejected from the side of the substrate 31 of the dicing tape 3 by a needle, and the semiconductor wafer 21 to be ejected is read by a reading device. Furthermore, the back side of the semiconductor wafer 21 being read is protected by the semiconductor back surface 14. [Crystalline Connection Step] As shown in Fig. 8, the semiconductor wafer 21 to be read is fixed to a substrate such as a substrate by a flip chip bonding method (flip-chip mounting method). Specifically, the semiconductor wafer 21 is fixed to the adherend 6 in accordance with a conventional method in a manner in which the circuit surface (also referred to as a front surface, a circuit pattern forming surface, an electrode forming surface, and the like) of the semiconductor wafer 21 is opposed to the adherend 6 . on. For example, the bump 51 formed on the circuit surface side of the semiconductor wafer 21 is brought into contact with the bonding conductive material (solder or the like) 61 adhered to the connection pad of the adherend 6 to be pressed, and the conductive material is melted. The semiconductor wafer 21 is electrically connected to the adherend 6, and the semiconductor wafer 21 can be fixed to the adherend 6 (the flip chip bonding step). At this time, a gap is formed between the semiconductor wafer 21 and the adherend 6, and the inter-void distance is usually about 30 μηη to 3 μ μΠΊ. Further, it is important that the semiconductor wafer 21 is subjected to flip-chip bonding (flip-chip bonding) to the adherend 6, and then the opposite surface or gap of the semiconductor wafer 21 and the adherend 6 is cleaned and filled in the gap. The sealing material (sealing resin, etc.) is sealed. As the adherend 6, various substrates such as a lead frame or a circuit board (such as a wiring circuit board) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate or a plastic substrate. As the plastic substrate, for example, 161814.doc •45·201246409, exemplified by ' ί ethoxylate plate, bis-methylene quinone imide substrate, polyimine substrate, and the like. The material used as the bump or the conductive material in the flip chip bonding step is not particularly limited, and examples thereof include tin-salt metal materials, tin-silver metal materials, tin-silver, steel-based metal materials, and tin. It is a solder (alloy) such as a metal material, a tin-character-secret metal material, a gold-based metal material, or a copper-based metal material. Further, in the blanket bonding step, the conductive material is condensed to connect the bumps on the circuit surface side of the semiconductor wafer 21 to the conductive material on the surface of the adherend 6. - The temperature at the time of the melting of the village material is usually around (for example, minus 3GG °C). By forming the film for semiconductor back surface 14 by using an epoxy resin or the like, it is possible to produce a film having the resistance to scratch. Further, the high temperature lightning in the bonding step is preferably the cleaning of the semiconductor wafer 21 and the adherend 6 by =(10)_. As a washing solution for this cleaning. Examples of the semiconductor include an organic cleaning liquid, a water-based cleaning, and a +-conductor-based surface film 14 which are preferably used as a coating agent. For the cleaning liquids, there is a substantial resistance to the cleaning liquid. , ^ special. In this case, the cleaning can be performed by the previous method. ..., *Special cleaning liquid [Sealing step] Next, a sealing step for sealing the gap between the coated crystal bodies 6 is performed. The semiconductor wafer 21 to be bonded and sealed as the sealing condition at this time: the sealing step is made of a sealing resin, ''', and is particularly limited, and can usually be borrowed from I6I814.doc -46 - 201246409 by 175t for 60 seconds to 90 seconds. The sealing resin is thermally cured by heating, but the present invention is not limited thereto, and for example, it can be cured for several minutes under i 6 5 〇c to 1 8 5 . In the heat treatment in this step, not only the sealing resin is thermally hardened but also the film for semiconductor back surface 14 is thermally hardened. Thereby, both of the sealing resin and the film for semiconductor back surface 14 are hardened and shrunk as the heat hardening progresses. As a result, the stress applied to the semiconductor wafer 21 by the hardening shrinkage of the sealing resin can be offset or alleviated by the shrinkage of the film (4) for the semiconductor back surface. Again, by this step, the film 14 for semiconductor back surface can be completely or It is almost completely thermally cured and can be attached to the back surface of the semiconductor element with excellent adhesion. Further, in the semiconductor back surface of the present invention, even if the film 14 is in an uncured state, it can be thermally cured together with the sealing material in the sealing step, so that it is not necessary to additionally add a step for thermally hardening the semiconductor back surface film 14. The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and is preferably used in a sealing material such as a sealing resin such as a known resin, but is more preferably an elastic resin. The sealing resin may, for example, be a resin composition containing an epoxy resin. Examples of the epoxy resin include an epoxy resin exemplified above, and a sealing resin using a resin composition containing an epoxy resin, and the resin component 'except epoxy resin' may also contain hardening other than epoxy resin. Resin (age resin, etc.) or thermoplastic resin. Further, as the resin of the age, it can be used as a curing agent for an epoxy resin, and the resin (4) is exemplified by the phenol resin exemplified. ' Semiconductors manufactured with the (4) layer of the semiconductor layer on the back side of the semiconductor layer 16). The device is a semiconductor device mounted by flip chip mounting, and thus compared with a semiconductor device mounted by die bonding. It is a shape that is thinner and smaller. Therefore, it can be preferably used as various electronic devices, electronic parts, or materials and members thereof. Specifically, examples of the electronic device using the flip-chip mounted semiconductor device of the present invention include a "mobile phone" or a "PHS (PerS〇nal Handy_ph Gne Plus (10), personal hand-held telephone system)", and a small computer (for example) The so-called "PDA (Pers〇nai

Assistant)」（個人數位助理）' 所謂「筆記型電腦」、所謂 「Netbook(商標）」、所謂「可佩帶式電腦」等）、使「行 動電話」及電腦一體化之小型電子設備、所謂「叫如!Assistants) (personal digital assistants), "notebook computers", "Netbook (trademarks)", "wearable computers", etc.), small electronic devices that integrate "mobile phones" and computers, so-called " Called like!

Camera(商標）」、所謂「數位攝影機」、小型電視、小型 遊戲設備、小型數位音響播放器、所謂「電子記事本」、 所謂「電子辭典」、所謂「電子書籍」用電子設備終端、 小型數位型時鐘等移動型電子設備（可移動之電子設備） 等，當然，亦可為除移動型以外（設置型等）之電子設備（例 如所謂「桌上型個人電腦」、薄型電視、錄影·播放用電 子設備（硬碟記錄器、DVD(Digital Versatile Disc，數位多 功能光碟）播放器等）、投影儀、微機器等）等。又，作為電 子零件或電子設備、電子零件之材料、構件，例如可列舉 所謂「CPU(Central Processing Unit’中央處理單元）」構 件、各種儲存裝置（所謂「存儲器」、硬碟等）之構件等。 【圖式簡單說明】 圖1係模式性地表示本實施形態之附有黏著劑層之半導 體背面用膜之一例的立體圖。 161814.doc -48- 201246409 圖2係圖1所示之附有黏著劑層之半導體背面用膜的部分 截面圖。 圖3係模式性地表示本實施形態之使用附有黏著劑層之 半導體背面用臈之半導體裝置之製造方法的截面圓。 圖4係模式性地表示本實施形態之使用附有黏著劑層之 半導體背面用膜之半導體裝置之製造方法的截面圖。 圖5係模式性地表示本實施形態之使用附有黏著劑層之 半導體背面用膜之半導體裝置之製造方法的截面圖。 圖6係模式性地表示本實施形態之使用附有黏著劑層之 半導體背面用膜之半導體裝置之製造方法的截面圖。 圖7係模式性地表示本實施形態之使用附有黏著劑層之 半導體背面用膜之半導體裝置之製造方法的截面圖。 圖8係模式性地表示本實施形態之使用附有黏著劑層之 半導體背面用膜之半導體裝置之製造方法的截面圖。 【主要元件符號說明】 3 切割膠帶 6 被接著體 10 附有黏著劑層之半導體背面用膜 12 剝離層 14 覆晶型半導體背面用膜 16 (環狀）黏著劑層 18 覆蓋襯塾 20 半導體晶圓 21 半導體晶片 161814.doc • 49- 201246409 22 切晶環 24 雷射光 31 基材 32 黏著劑層 51 形成於半導體晶片之電路面側之凸塊 61 黏附於被接著體之連接墊上之接合用導電材料 I61814.doc •50-Camera (trademark), so-called "digital camera", compact TV, small game device, compact digital audio player, so-called "electronic notebook", so-called "electronic dictionary", so-called "electronic book" electronic device terminal, small digital Mobile electronic devices such as clocks (mobile electronic devices), etc., of course, can be electronic devices other than mobile (setting type, etc.) (for example, "desktop personal computers", thin televisions, video recording and playback) Use electronic devices (hard disk recorders, DVD (Digital Versatile Disc), etc.), projectors, micro-machines, etc.). In addition, examples of the materials and components of the electronic component, the electronic device, and the electronic component include a "CPU (Central Processing Unit)" component, and various storage devices (such as "memory" and hard disk). . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view schematically showing an example of a film for a back surface of a semiconductor with an adhesive layer of the embodiment. 161814.doc -48- 201246409 Fig. 2 is a partial cross-sectional view showing the film for semiconductor back surface with an adhesive layer shown in Fig. 1. Fig. 3 is a view schematically showing a cross-sectional circle of a method of manufacturing a semiconductor device using a semiconductor back surface with an adhesive layer in the embodiment. Fig. 4 is a cross-sectional view schematically showing a method of manufacturing a semiconductor device using a film for semiconductor back surface with an adhesive layer according to the embodiment. Fig. 5 is a cross-sectional view schematically showing a method of manufacturing a semiconductor device using a film for semiconductor back surface with an adhesive layer according to the embodiment. Fig. 6 is a cross-sectional view schematically showing a method of manufacturing a semiconductor device using a film for semiconductor back surface with an adhesive layer in the embodiment. Fig. 7 is a cross-sectional view schematically showing a method of manufacturing a semiconductor device using a film for semiconductor back surface with an adhesive layer according to the embodiment. Fig. 8 is a cross-sectional view schematically showing a method of manufacturing a semiconductor device using a film for semiconductor back surface with an adhesive layer according to the embodiment. [Description of main component symbols] 3 dicing tape 6 film 10 for semiconductor back surface with adhesive layer attached to the adhesive body 10 peeling layer 14 film for flip chip type semiconductor back surface (ring) adhesive layer 18 covering lining 20 semiconductor crystal Round 21 semiconductor wafer 161814.doc • 49- 201246409 22 dicing ring 24 laser light 31 substrate 32 adhesive layer 51 The bump 61 formed on the circuit surface side of the semiconductor wafer adheres to the bonding conductive layer on the connection pad of the bonded body Material I61814.doc •50-

Claims (1)

201246409 七、申請專利範圍： 1. -種半導體裝置之製造方法，其特徵在於具備如下步驟： 步驟A，其準備具有覆晶型半導體背面用膜、與設置 於上述覆晶型半導體背面用膜之外周上之環狀黏著劑層 的附有黏著劑層之半導體背面用膜； 步驟B，其於較上述黏著劑層更内側之未積層有上述 黏著劑層之上述覆晶型半導體背面用膜上貼附半導體晶 圓； 步驟C，其於上述黏著劑層上貼附切晶環；及 步驟D，其於上述步驟B及上述步驟c後，對上述覆晶 型半導體背面用膜進行雷射標記。 2·如請求項1之半導體裝置之製造方法其具備： 步驟E，其於上述覆晶型半導體背面用膜上貼附切割 膠帶；及 步驟F，其將上述半導體晶圓與實施雷射標記之覆晶 型半導體背面用膜一同切割。 3. 如請求項2之半導體裝置之製造方法，其具備： 步驟G，其將藉由切割而單片化之附有覆晶型半導體 背面用膜之半導體元件自切割膠帶剝離。 4. 如請求項1至3中任一項之半導體裝置之製造方法，其中 上述附有黏著劑層之半導體背面用膜係於上述覆晶型半 導體背面用膜側之面上設置有剝離層， 且具備步驟X，其於上述步驟B及上述步驟C後剝離上 述剝離層，且 於上述步驟X後進行上述步驟D。 161814.doc201246409 VII. Patent Application Section: 1. A method of manufacturing a semiconductor device, comprising the steps of: Step A, preparing a film for a flip chip type semiconductor back surface, and providing a film for the back surface of the flip chip type semiconductor a film for semiconductor back surface with an adhesive layer on the outer circumference of the annular adhesive layer; and step B, which is formed on the film for the back surface of the flip chip type semiconductor having the adhesive layer on the inner side of the adhesive layer Attaching a semiconductor wafer; step C, attaching a dicing ring to the adhesive layer; and step D, after the step B and the step c, performing laser marking on the film for the back surface of the flip chip semiconductor . 2. The method of manufacturing a semiconductor device according to claim 1, comprising: a step E of attaching a dicing tape to the film for a flip chip type semiconductor back surface; and a step F of performing the semiconductor wafer and performing laser marking The film on the back side of the flip chip is cut together. 3. The method of manufacturing a semiconductor device according to claim 2, comprising: Step G, wherein the semiconductor element with the film for the flip chip type semiconductor back surface which is diced by dicing is peeled off from the dicing tape. 4. The method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the film for semiconductor back surface with the adhesive layer is provided with a release layer on a surface of the film-side semiconductor back surface film side. Further, step X is provided, and after the step B and the step C, the peeling layer is peeled off, and after the step X, the step D is performed. 161814.doc
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