JP2012156377A - Method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of performing laser marking of a film for the back surface of a flip-chip type semiconductor efficiently .SOLUTION: The method of manufacturing a semiconductor device includes step A for preparing a film for the back surface of a flip-chip type semiconductor with an adhesive layer having a film for the back surface of a flip-chip type semiconductor, and a ring-shaped adhesive layer provided on the outer periphery of the film for the back surface of a flip-chip type semiconductor, step B for pasting a semiconductor wafer onto the film for the back surface of a flip-chip type semiconductor on the inside of the adhesive layer where the adhesive layer is not laminated, step C for pasting a dicing ring to the adhesive layer, and step D for performing laser marking of the film for the back surface of a flip-chip type semiconductor after the step B and step C.

Description

  The present invention relates to a semiconductor device using a film for a semiconductor back surface with an adhesive layer, comprising a film for a flip chip type semiconductor back surface and a ring-shaped adhesive layer provided on the outer periphery of the film for a flip chip type semiconductor back surface. It relates to the manufacturing method. The flip chip type semiconductor back film is used for protecting the back surface of a semiconductor element such as a semiconductor chip and improving the strength.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. Therefore, as a semiconductor device and its package, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) is widely used (for example, Patent Documents). 1-10). The flip chip connection is fixed in such a manner that the circuit surface of the semiconductor chip faces the electrode forming surface of the substrate. In such a semiconductor device or the like, the back surface of the semiconductor chip may be protected by a protective film to prevent the semiconductor chip from being damaged.

  In some cases, various kinds of information (for example, character information and graphic information) such as an identification number of a semiconductor chip are laser-marked on the protective film. Conventionally, laser marking is performed after a semiconductor wafer is diced into individual semiconductor elements (see, for example, Patent Document 11).

JP 2008-166451 A JP 2008-006386 A Japanese Patent Laid-Open No. 2007-261035 JP 2007-250970 A JP 2007-158026 A Japanese Patent Laid-Open No. 2004-221169 JP 2004-214288 A JP 2004-142430 A JP 2004-072108 A JP 2004-063551 A JP 2010-199543 A

  However, if laser marking is performed after the semiconductor wafer is diced into semiconductor elements, positioning for laser marking must be performed for each semiconductor element, leaving room for improvement in terms of productivity.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device capable of efficiently performing laser marking on a flip chip type semiconductor back film.

  As a result of studying to solve the above-mentioned conventional problems, the present inventors have applied a semiconductor wafer and a dicing ring to a film for a semiconductor back surface with an adhesive layer, and then laser marked the flip chip type semiconductor back surface film. As a result, it was found that the laser marking can be efficiently performed on the flip chip type semiconductor back film, and the present invention has been completed.

  That is, the method for manufacturing a semiconductor device according to the present invention has a pressure-sensitive adhesive layer having a flip-chip type semiconductor back film and a ring-shaped pressure-sensitive adhesive layer provided on the outer periphery of the flip chip type semiconductor back film. Step A for preparing a film for semiconductor back surface, Step B for attaching a semiconductor wafer on the flip chip type semiconductor back surface film on the inner side of the pressure-sensitive adhesive layer on which the pressure-sensitive adhesive layer is not laminated, It comprises a step C for attaching a dicing ring to the pressure-sensitive adhesive layer, and a step D for performing laser marking on the flip-chip type semiconductor back film after the step B and the step C.

According to the said structure, after the said process B and the said process C, a laser marking is performed to the film for flip chip type semiconductor back surfaces. At the stage where the process B and the process C are completed, the semiconductor wafer and the flip chip type semiconductor back film are not separated. Therefore, once the semiconductor wafer is positioned, laser marking can be performed on all the semiconductor elements with the flip chip type semiconductor back film obtained from the semiconductor wafer with the flip chip type semiconductor back film. As a result, productivity can be improved as compared with the method of individually positioning the semiconductor elements with the flip chip type semiconductor back surface film after being singulated and performing laser marking.
In addition, after attaching a dicing ring to the adhesive layer of the film for semiconductor back surface with an adhesive layer (after Step C), laser marking is performed on the film for flip chip type semiconductor back surface (Step D is performed). At the marking stage, a dicing ring is attached. Therefore, the flip chip type semiconductor back film can be securely fixed while maintaining the positional relationship with the semiconductor wafer, and the marking positioning accuracy during laser marking can be maintained high.

  In the above configuration, a process E for attaching a dicing tape to the flip chip type semiconductor back film, and a process F for dicing the semiconductor wafer together with the flip chip type semiconductor back film to which laser marking has been applied are provided. It is preferable. Moreover, in the said structure, it is preferable to comprise the process G which peels from the dicing tape the semiconductor element with the film for flip chip type semiconductor back surfaces separated by the dicing. Thereby, the semiconductor element with the film for flip chip type semiconductor back surfaces to which the laser marking was given can be obtained.

  The said structure WHEREIN: The said film for semiconductor back surfaces with an adhesive layer is provided with the peeling layer in the surface at the side of the said film for flip chip type semiconductor back surfaces, and peels the said peeling layer after the said process B and the said process C. It is preferable to perform the step D after the step X. Since the step X is provided and laser marking is performed on the flip chip type semiconductor back film after the step X (step D is performed), laser light is not scattered on the release layer 12. Therefore, it is possible to perform highly accurate laser marking.

It is a perspective view which shows typically an example of the film for semiconductor back surfaces with an adhesive layer which concerns on this embodiment. It is a fragmentary sectional view of the film for semiconductor back surfaces with an adhesive layer shown in FIG. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment. It is sectional drawing which shows typically the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment.

  An embodiment of the present invention will be described with reference to the drawings, but the present invention is not limited to this example. First, the film for semiconductor backside with an adhesive layer according to this embodiment will be described. FIG. 1 is a perspective view schematically showing an example of a film for a semiconductor back surface with an adhesive layer according to this embodiment, and FIG. 2 is a partial cross-sectional view thereof. In the drawing, parts unnecessary for explanation are omitted, and there are parts shown enlarged or reduced for easy explanation.

(Semiconductor backside film with adhesive layer)
As shown in FIGS. 1 and 2, a film 10 for a semiconductor back surface with an adhesive layer is a long release layer 12 and a circular flip chip type semiconductor back film provided on the release layer 12 in a plan view. (Hereinafter also referred to as “film for semiconductor back surface”) 14 and a ring-shaped adhesive layer 16 provided on the outer periphery of the film 14 for semiconductor back surface. The flip chip type semiconductor back film 14 has a diameter equal to or larger than the outer diameter of the dicing ring 22 to be attached (see FIG. 3), and is laminated on the release layer 12 with a certain interval. Has been. The pressure-sensitive adhesive layer 16 has a shape corresponding to the dicing ring 22 (see FIG. 3) to be attached. Moreover, the film 10 for semiconductor back surfaces with an adhesive layer has the cover liner 18 (not shown in FIG. 1) of the shape corresponding to the peeling layer 12 on the film 14 for flip chip type semiconductor back surfaces and the adhesive layer 16. Are stacked. The cover liner 18 protects the conductor back film 14 and the pressure-sensitive adhesive layer 16 until the semiconductor wafer 20 and the dicing ring 22 are attached.

  In addition, the film for semiconductor back surfaces with an adhesive layer of this invention does not need to be provided with the cover liner 18. FIG. Moreover, the shape of a peeling layer is not specifically limited, You may have a shape equivalent to the film for semiconductor back surfaces. Moreover, the film for semiconductor back surface of this invention should just be larger than the outer diameter of the semiconductor wafer affixed, and may be smaller than the outer diameter of the dicing ring affixed. In this case, the film for semiconductor back surface and the ring-shaped pressure-sensitive adhesive layer are laminated on the release layer in such a manner that they do not overlap each other.

(Flip chip type film for semiconductor backside)
The semiconductor back surface film 14 has a film form. The film for semiconductor back surface 14 is in an uncured state (including a semi-cured state), and is thermally cured after being attached to a semiconductor wafer.

  The film for semiconductor back surface is preferably formed of at least a thermosetting resin, and more preferably formed of at least a thermosetting resin and a thermoplastic resin. By forming it with at least a thermosetting resin, the film for semiconductor back surface can effectively exhibit the function as an adhesive layer.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, and polycarbonate resin. , Thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), polyamideimide resins, or fluorine Examples thereof include resins. A thermoplastic resin can be used individually or in combination of 2 or more types. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and is linear or branched having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, and particularly preferably 8 or 9 carbon atoms). And polymers having one or more esters of acrylic acid or methacrylic acid having an alkyl group as a component. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin. Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, pentyl group, isopentyl group, hexyl group, heptyl group, and 2-ethylhexyl group. Octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.

  Further, the other monomer for forming the acrylic resin (a monomer other than an alkyl ester of acrylic acid or methacrylic acid having an alkyl group with 30 or less carbon atoms) is not particularly limited. For example, acrylic acid , Methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid-containing monomer, such as maleic anhydride or itaconic anhydride, etc. ) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meta ) Acrylic acid 10-hydroxyde , Hydroxyl group-containing monomers such as 12-hydroxylauryl (meth) acrylic acid or (4-hydroxymethylcyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane Sulfonic acid, methacrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate or sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or phosphoric acid group content such as 2-hydroxyethyl acryloyl phosphate And monomers. In addition, (meth) acrylic acid means acrylic acid and / or methacrylic acid, and (meth) of the present invention has the same meaning.

  Examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. A thermosetting resin can be used individually or in combination of 2 or more types. As the thermosetting resin, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable. Moreover, a phenol resin can be used suitably as a hardening | curing agent of an epoxy resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy. Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin Epoxy resin such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin It can be used.

  As the epoxy resin, among the above examples, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. A phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalent to 1.2 equivalent. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The content of the thermosetting resin is preferably 5% by weight or more and 90% by weight or less, and more preferably 10% by weight or more and 85% by weight or less, based on all resin components in the film for semiconductor back surface. More preferably, it is 15 wt% or more and 80 wt% or less. By making the content 5% by weight or more, the thermosetting shrinkage can be suppressed. In addition, when the sealing resin is thermally cured, the film for the semiconductor back surface can be sufficiently thermoset, and the flip chip type semiconductor device without peeling can be manufactured by securely bonding and fixing to the back surface of the semiconductor element. It becomes possible. On the other hand, the warpage of the package (PKG: flip chip type semiconductor device) can be suppressed by making the content 90% by weight or less.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing acceleration catalyst, a phosphorus curing acceleration catalyst, an imidazole curing acceleration catalyst, a boron curing acceleration catalyst, a phosphorus-boron curing acceleration catalyst, or the like can be used.

  The amine-based curing accelerator (amine-based curing acceleration catalyst) is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like. .

  The phosphorus curing accelerator (phosphorus curing accelerator catalyst) is not particularly limited. For example, triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyltolylphosphine. Triorganophosphine such as fin, tetraphenylphosphonium bromide (trade name: TPP-PB), methyltriphenylphosphonium (trade name: TPP-MB), methyltriphenylphosphonium chloride (trade name: TPP-MC), methoxymethyl Examples thereof include triphenylphosphonium (trade name; TPP-MOC), benzyltriphenylphosphonium chloride (trade name; TPP-ZC), and the like (all manufactured by Hokuko Chemical Co., Ltd.). The triphenylphosphine compound is preferably substantially insoluble in the epoxy resin. It can suppress that hardening progresses at the time of a preservation | save as it is insoluble with respect to an epoxy resin. Examples of the thermosetting catalyst having a triphenylphosphine structure and substantially insoluble in the epoxy resin include methyltriphenylphosphonium (trade name: TPP-MB). The “insoluble” means that the thermosetting catalyst made of a triphenylphosphine compound is insoluble in a solvent made of an epoxy resin, and more specifically, a temperature range of 10 to 40 ° C. It means that 10% by weight or more does not dissolve.

  Examples of the imidazole-based accelerator (imidazole-based accelerator) include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11-Z), and 2-heptadecylimidazole (trade name; C17Z), 1-2-dimethylimidazole (trade name; 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4- Methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name) 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name; C11Z-CN), 1-cyanoethyl-2-phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s -Triazine (trade name; 2MZ-A), 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; C11Z-A), 2,4 -Diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2'-methyl Imidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), - phenyl-4-methyl-5-hydroxymethylimidazole (trade name; 2P4MHZ-PW), and the like (all manufactured by Shikoku Chemicals Corporation).

  The boron-based curing accelerator (boron-based curing acceleration catalyst) is not particularly limited, and examples thereof include trichloroborane.

  The phosphorus-boron curing accelerator (phosphorus-boron curing accelerator catalyst) is not particularly limited, and examples thereof include tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium tetra-p-triborate ( Trade name: TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name: TPP-ZK), triphenylphosphine triphenylborane (trade name: TPP-S), etc. (all are Hokuko Chemical Co., Ltd.) Made).

  The ratio of the thermosetting acceleration catalyst is preferably 0.01 to 0.25% by weight with respect to the total amount of the resin component. A thermosetting resin can be suitably thermosetted as the said ratio of a thermosetting acceleration | stimulation catalyst is 0.01 weight% or more.

  Here, the film for the semiconductor back surface may be a single layer or a laminated film in which a plurality of layers are laminated, but when the film for the semiconductor back surface is a laminated film, the ratio of the thermosetting acceleration catalyst is the laminated film. The whole may be 0.01 to 0.25% by weight based on the total amount of the resin components.

  The semiconductor back film is preferably formed of a resin composition containing an epoxy resin and a phenol resin, or a resin composition containing an epoxy resin, a phenol resin and an acrylic resin. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured.

  It is important that the film 14 for semiconductor back surface has adhesiveness (adhesion) with respect to the back surface (circuit non-formed surface) of the semiconductor wafer. The film for semiconductor back surface 14 can be formed of, for example, a resin composition containing an epoxy resin as a thermosetting resin. Since the film for semiconductor back surface 14 is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  The adhesive strength of the film for semiconductor back surface to the semiconductor wafer (23 ° C., peeling angle 180 °, peeling speed 300 mm / min) is preferably in the range of 0.5 N / 20 mm to 15 N / 20 mm, and 0.7 N / 20 mm to 10 N / 20 mm. The range of is more preferable. By setting it to 0.5 N / 20 mm or more, it is stuck to a semiconductor wafer or a semiconductor element with excellent adhesion, and the occurrence of floating or the like can be prevented. Further, it is possible to prevent the occurrence of chip jumping during dicing of the semiconductor wafer. On the other hand, by setting it to 15 N / 20 mm or less, it can be easily peeled from the dicing tape.

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent. As the crosslinking agent, an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable. Moreover, the said crosslinking agent can be used individually or in combination of 2 or more types.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In addition, the usage-amount in particular of a crosslinking agent is not restrict | limited, According to the grade to bridge | crosslink, it can select suitably. Specifically, the amount of the crosslinking agent used is, for example, usually 7 parts by weight or less (for example, 0.05 parts by weight) with respect to 100 parts by weight of the polymer component (particularly, the polymer having a functional group at the molecular chain end). ~ 7 parts by weight). When the amount of the crosslinking agent used is more than 7 parts by weight based on 100 parts by weight of the polymer component, the adhesive force is lowered, which is not preferable. From the viewpoint of improving cohesive strength, the amount of crosslinking agent used is preferably 0.05 parts by weight or more with respect to 100 parts by weight of the polymer component.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The film for semiconductor back surface is preferably colored. Thereby, excellent marking properties and appearance can be exhibited, and a semiconductor device having an added-value appearance can be obtained. Thus, since the colored film for semiconductor back surface has excellent marking properties, the film for semiconductor back surface is applied to the surface of the semiconductor element or the non-circuit surface side of the semiconductor device using the semiconductor element. By performing laser marking, various information such as character information and graphic information can be given. In particular, by controlling the coloring color, it is possible to visually recognize information (character information, graphic information, etc.) given by marking with excellent visibility. Moreover, when the film for semiconductor back surface is colored, it can distinguish easily from a cover liner etc., and workability | operativity etc. can be improved. Further, for example, as a semiconductor device, it is possible to color-code according to products. When the film for semiconductor back surface is colored (when it is not colorless or transparent), the color exhibited by coloring is not particularly limited, but is preferably a dark color such as black, blue, red, etc., particularly black It is preferable that

In the present embodiment, the dark, basically, L ^* a ^* b ^* L defined by the color system ^* is 60 or less (0 to 60) [preferably 50 or less (0 to 50) More preferably, it means a dark color of 40 or less (0 to 40)].

Also, black and basically, L ^* a ^* b ^* L defined by the color system ^* is 35 or less (0 to 35) [preferably 30 or less (0 to 30), more preferably 25 This means a black color which is (0-25) below. In black, a ^* and b ^* defined in the L ^* a ^* b ^* color system can be appropriately selected according to the value of L ^* . As a ^* and b ^* , for example, both are preferably −10 to 10, more preferably −5 to 5, particularly in the range of −3 to 3 (among others 0 or almost 0). Is preferred.

In the present embodiment, L ^* , a ^* , and b ^* defined by the L ^* a ^* b ^* color system are color difference meters (trade name “CR-200” manufactured by Minolta Co .; color difference meter). It is calculated | required by measuring using. The L ^* a ^* b ^* color system is a color space recommended by the International Commission on Illumination (CIE) in 1976, and is a color space called the CIE 1976 (L ^* a ^* b ^* ) color system. It means that. The L ^* a ^* b ^* color system is defined in JIS Z 8729 in the Japanese Industrial Standard.

  When coloring the film for semiconductor back surface, a color material (colorant) can be used according to the target color. As such a color material, various dark color materials such as a black color material, a blue color material, and a red color material can be suitably used, and a black color material is particularly suitable. As the color material, any of a pigment, a dye and the like may be used. Color materials can be used alone or in combination of two or more. As the dye, any form of dyes such as acid dyes, reactive dyes, direct dyes, disperse dyes, and cationic dyes can be used. Also, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments.

  In particular, when a dye is used as a coloring material, the dye is dissolved or uniformly dispersed in the semiconductor back film, so that the film for semiconductor back (and hence dicing tape) having a uniform or almost uniform coloring density is obtained. Integrated film for semiconductor back surface) can be easily manufactured. Therefore, when a dye is used as the coloring material, the film for semiconductor back surface in the dicing tape-integrated film for semiconductor back surface can make the coloring density uniform or almost uniform, and can improve the marking property and appearance.

  Although it does not restrict | limit especially as a black color material, For example, it can select suitably from an inorganic black pigment and a black dye. In addition, as a black color material, a color material mixture in which a cyan color material (blue-green color material), a magenta color material (red purple color material) and a yellow color material (yellow color material) are mixed. It may be. Black color materials can be used alone or in combination of two or more. Of course, the black color material can be used in combination with a color material other than black.

  Specifically, as the black color material, for example, carbon black (furnace black, channel black, acetylene black, thermal black, lamp black, etc.), graphite (graphite), copper oxide, manganese dioxide, azo pigment (azomethine) Azo black, etc.), aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite (nonmagnetic ferrite, magnetic ferrite, etc.), magnetite, chromium oxide, iron oxide, molybdenum disulfide, chromium complex, complex oxide black Examples thereof include dyes and anthraquinone organic black dyes.

  In the present invention, as the black color material, C.I. I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. I. Direct Black 17, 19, 19, 22, 32, 38, 51, 71, C.I. I. Acid Black 1, 2, 24, 26, 31, 48, 52, 107, 109, 110, 119, 154C. I. Black dyes such as Disperse Black 1, 3, 10, and 24; I. Black pigments such as CI Pigment Black 1 and 7 can also be used.

  Examples of such a black color material include a product name “Oil Black BY”, a product name “OilBlack BS”, a product name “OilBlack HBB”, a product name “Oil Black 803”, a product name “Oil Black 860”, The product name “Oil Black 5970”, the product name “Oil Black 5906”, the product name “Oil Black 5905” (manufactured by Orient Chemical Co., Ltd.) and the like are commercially available.

  Examples of the color material other than the black color material include a cyan color material, a magenta color material, and a yellow color material. Examples of cyan color materials include C.I. I. Solvent Blue 25, 36, 60, 70, 93, 95; I. Cyan dyes such as Acid Blue 6 and 45; I. Pigment Blue 1, 2, 3, 15, 15: 1, 15: 2, 15: 3, 15: 3, 15: 4, 15: 5, 15: 6, 16, 16, 17 17: 1, 18, 22, 25, 56, 60, 63, 65, 66; I. Bat Blue 4; 60, C.I. I. And cyan pigments such as CI Pigment Green 7.

  In the magenta color material, examples of the magenta dye include C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 30, 49, 52, 58, 63, 81, 82, 83, 84, the same 100, 109, 111, 121, 122; I. Disper thread 9; I. Solvent Violet 8, 13, 13, 21, and 27; C.I. I. Disperse violet 1; C.I. I. Basic Red 1, 2, 9, 9, 13, 14, 15, 17, 17, 18, 22, 23, 24, 27, 29, 32, 34, the same 35, 36, 37, 38, 39, 40; I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 21, 25, 26, 27, 28 and the like.

  In the magenta color material, examples of the magenta pigment include C.I. I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 11, 12, 13, 14, 15, 16, 17, 18, 19, 21, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42, 48: 1, 48: 2, 48: 3, 48: 4, 49, 49: 1, 50, 51, 52, 52: 2, 53: 1, 54, 55, 56, 57: 1, 58, 60, 60: 1, 63, 63: 1, 63: 2, 64, 64: 1, 67, 68, 81, 83, etc. 87, 88, 89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146 147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178, 179, 184, 185 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238, 245; I. C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; I. Bat red 1, 2, 10, 13, 15, 23, 29, 35 and the like.

  Examples of yellow color materials include C.I. I. Solvent Yellow 19, 44, 77, 79, 81, 82, 93, 98, 103, 104, 112, 162 and the like yellow dyes; C.I. I. Pigment Orange 31 and 43; C.I. I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 10, 12, 13, 14, 15, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75, 81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116, 117, 120, 128, 129, 133, 138, 139 147, 150, 151, 153, 154, 155, 156, 167, 172, 173, 180, 185, 195; I. Examples thereof include yellow pigments such as Vat Yellow 1, 3 and 20.

  Various color materials such as a cyan color material, a magenta color material, and a yellow color material can be used alone or in combination of two or more. When two or more kinds of various color materials such as a cyan color material, a magenta color material, and a yellow color material are used, the mixing ratio (or blending ratio) of these color materials is not particularly limited, and each color material. It can be selected as appropriate according to the type and the target color.

  When coloring the film 14 for semiconductor back surfaces, the coloring form in particular is not restrict | limited. For example, the film for semiconductor back surface may be a single layer film-like material to which a colorant is added. Further, it may be a laminated film in which at least a resin layer formed of a thermosetting resin and a colorant layer are laminated. In addition, when the film 14 for semiconductor back surfaces is a laminated film of a resin layer and a colorant layer, the film 14 for semiconductor back surface in a laminated form has a laminated form of resin layer / colorant layer / resin layer. It is preferable. In this case, the two resin layers on both sides of the colorant layer may be resin layers having the same composition or may be resin layers having different compositions.

  The film for semiconductor back surface 14 can be appropriately mixed with other additives as necessary. Examples of other additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.

  The filler may be either an inorganic filler or an organic filler, but an inorganic filler is suitable. By blending a filler such as an inorganic filler, it is possible to impart conductivity to the film for semiconductor back surface, improve thermal conductivity, adjust the elastic modulus, and the like. The film 14 for semiconductor back surface may be conductive or non-conductive. Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metal such as tin, zinc, palladium, solder, or alloys, and other carbon. A filler can be used individually or in combination of 2 or more types. Among them, silica, particularly fused silica is suitable as the filler. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1 micrometer-80 micrometers. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.

  The blending amount of the filler (particularly inorganic filler) is preferably 80 parts by weight or less (0 to 80 parts by weight), particularly 0 to 70 parts by weight with respect to 100 parts by weight of the organic resin component. It is preferable that

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. A flame retardant can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. A silane coupling agent can be used individually or in combination of 2 or more types. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.

  The film for semiconductor back surface 14 is a resin composition obtained by mixing, for example, a thermosetting resin such as an epoxy resin, a thermoplastic resin such as an acrylic resin as necessary, and a solvent or other additives as necessary. It can be formed using conventional methods of preparing the product and forming it into a film-like layer. Specifically, for example, the resin composition is applied onto the release layer 12, or the resin composition is applied onto an appropriate separator (such as release paper) to form a resin layer (or adhesive layer). And the film-like layer (adhesive layer) as a film for semiconductor back surfaces can be formed by the method etc. which transfer (transfer) this on the peeling layer 12. The resin composition may be a solution or a dispersion.

  In addition, when the film 14 for semiconductor back surfaces is formed with the resin composition containing thermosetting resins, such as an epoxy resin, the film for semiconductor back surfaces is a thermosetting resin in the step before applying to a semiconductor wafer. It is an uncured or partially cured state. In this case, after being applied to the semiconductor wafer (specifically, usually when the sealing material is cured in the flip chip bonding process), the thermosetting resin in the film for semiconductor back surface is completely or almost completely cured. .

Thus, even if the film for semiconductor back surface contains a thermosetting resin, since the thermosetting resin is in an uncured or partially cured state, the gel fraction of the film for semiconductor back surface is particularly limited. For example, it can be appropriately selected from the range of 50% by weight or less (0% by weight to 50% by weight), preferably 30% by weight or less (0% by weight to 30% by weight), particularly 10% by weight. The following (0 to 10% by weight) is preferable. The measuring method of the gel fraction of the film for semiconductor back surface can be measured by the following measuring method.
<Method for measuring gel fraction>
About 0.1 g from the film for semiconductor back surface is sampled and weighed accurately (weight of the sample). After wrapping the sample in a mesh-like sheet, it is immersed in about 50 ml of toluene at room temperature for 1 week. Thereafter, the solvent-insoluble matter (the contents of the mesh sheet) is taken out from toluene and dried at 130 ° C. for about 2 hours. The solvent-insoluble matter after drying is weighed (weight after immersion / drying), and the following formula (a) From this, the gel fraction (% by weight) is calculated.
Gel fraction (% by weight) = [(weight after immersion / drying) / (weight of sample)] × 100 (a)

  In addition, the gel fraction of the film for semiconductor back surfaces can be controlled by the heating temperature, the heating time, etc., in addition to the type and content of the resin component, the type and content of the crosslinking agent.

  In the present invention, when the film for semiconductor back surface is a film-like product formed of a resin composition containing a thermosetting resin such as an epoxy resin, it can effectively exhibit adhesion to a semiconductor wafer.

  In addition, since the cutting water is used in the dicing process of the semiconductor wafer, the film for the back surface of the semiconductor may absorb moisture, resulting in a moisture content higher than that in the normal state. If flip-chip bonding is performed with such a high water content, water vapor may accumulate at the bonding interface between the semiconductor back surface film 14 and the semiconductor wafer or its processed body (semiconductor), which may cause floating. Therefore, as a film for semiconductor back surface, by providing a core material with high moisture permeability on both sides, water vapor diffuses and this problem can be avoided. From such a viewpoint, a multilayer structure in which the film 14 for the semiconductor back surface is formed on one surface or both surfaces of the core material may be used as the film for the semiconductor back surface. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polycarbonate film), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a silicon substrate, a glass substrate, or the like. Is mentioned.

  The thickness of the film for semiconductor back surface 14 (total thickness in the case of a laminated film) is not particularly limited, but can be appropriately selected from a range of about 2 μm to 200 μm, for example. Further, the thickness is preferably about 4 μm to 160 μm, more preferably about 6 μm to 100 μm, and particularly preferably about 10 μm to 80 μm.

  The tensile storage elastic modulus at 23 ° C. in the uncured state of the film for semiconductor back surface 14 is preferably 1 GPa or more (for example, 1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly preferably 3 GPa or more. Is preferred. When the tensile storage elastic modulus is 1 GPa or more, the semiconductor chip is peeled from the adhesive layer 32 of the dicing tape together with the semiconductor back surface film 14, and then the semiconductor back surface film 14 is placed on the support, When transporting or the like, it is possible to effectively suppress or prevent the semiconductor back film from sticking to the support. In addition, the said support body says the top tape in a carrier tape, a bottom tape, etc., for example. In addition, when the film 14 for semiconductor back surfaces is formed with the resin composition containing a thermosetting resin, since the thermosetting resin is usually in an uncured or partially cured state as described above, the semiconductor back surface The elastic modulus at 23 ° C. of the film for use is usually the elastic modulus at 23 ° C. when the thermosetting resin is uncured or partially cured.

  Here, the film for semiconductor back surface 14 may be a single layer or a laminated film in which a plurality of layers are laminated. In the case of a laminated film, the tensile storage elastic modulus at 23 ° C. in the uncured state is a laminated film. It may be in the range of 1 GPa or more (for example, 1 GPa to 50 GPa) as a whole. In addition, the tensile storage modulus (23 ° C.) of the film for semiconductor back surface in the uncured state is the type of resin component (thermoplastic resin, thermosetting resin) and the content thereof, the type of filler such as silica filler, It can be controlled by its content. In addition, when the film 14 for semiconductor back surfaces is a laminated film by which the several layer was laminated | stacked (when the film for semiconductor back surfaces has a lamination | stacking form), as a lamination | stacking form, a wafer adhesive layer and a laser are used, for example. A laminated form composed of a mark layer can be exemplified. In addition, between such a wafer adhesive layer and a laser mark layer, other layers (intermediate layer, light blocking layer, reinforcing layer, colored layer, substrate layer, electromagnetic wave blocking layer, heat conducting layer, adhesive layer, etc.) ) May be provided. The wafer adhesive layer is a layer that exhibits excellent adhesion (adhesiveness) to the wafer, and is a layer that contacts the back surface of the wafer. On the other hand, the laser mark layer is a layer that exhibits excellent laser marking properties, and is a layer that is used when laser marking is performed on the back surface of a semiconductor chip.

  The tensile storage elastic modulus is not laminated on the dicing tape 3, but an uncured semiconductor back film 14 is prepared, and a dynamic viscoelasticity measuring device “Solid Analyzer RS A2” manufactured by Rheometric is used. In the tension mode, the sample width: 10 mm, the sample length: 22.5 mm, the sample thickness: 0.2 mm, the frequency: 1 Hz, the heating rate: 10 ° C./min, a predetermined temperature under a nitrogen atmosphere ( 23 ° C.) and the obtained tensile storage modulus was obtained.

  The light transmittance (visible light transmittance) of visible light (wavelength: 400 nm to 800 nm) in the film 14 for semiconductor back surface is not particularly limited, but may be, for example, in the range of 20% or less (0% to 20%). It is preferably 10% or less (0% to 10%), more preferably 5% or less (0% to 5%). If the visible light transmittance of the semiconductor back surface film 14 is greater than 20%, the semiconductor element may be adversely affected by the passage of light. The visible light transmittance (%) depends on the type and content of the resin component of the film for semiconductor back surface 14, the type and content of colorant (pigment, dye, etc.), the content of inorganic filler, and the like. Can be controlled.

  The visible light transmittance (%) of the semiconductor back surface film 14 can be measured as follows. That is, a single film 14 for a semiconductor back surface having a thickness (average thickness) of 20 μm is produced. Next, the film for semiconductor back surface 14 was irradiated with a visible light having a wavelength of 400 nm to 800 nm [apparatus: visible light generator manufactured by Shimadzu Corporation (trade name “ABSORPTION SPECTRO PHOTOMETR”)] with a predetermined intensity and transmitted. Measure the intensity of visible light. Furthermore, the value of visible light transmittance can be obtained from the intensity change before and after the visible light passes through the film 14 for semiconductor back surface. The visible light transmittance (%; wavelength: 20 μm) of the semiconductor back film 14 having a thickness of 20 μm is determined by the value of the visible light transmittance (%; wavelength: 400 nm to 800 nm) of the semiconductor back film 14 that is not 20 μm thick. 400 nm to 800 nm) can also be derived. Further, in the present invention, the visible light transmittance (%) in the case of the film 14 for semiconductor back surface having a thickness of 20 μm is obtained, but the film for semiconductor back surface according to the present invention is limited to a film having a thickness of 20 μm. is not.

  Moreover, as the film 14 for semiconductor back surfaces, the one where the moisture absorption rate is lower is preferable. Specifically, the moisture absorption rate is preferably 1% by weight or less, more preferably 0.8% by weight or less. By making the moisture absorption rate 1% by weight or less, the laser marking property can be improved. Further, for example, in the reflow process, it is possible to suppress or prevent the generation of voids between the semiconductor back surface film 14 and the semiconductor element. In addition, the said moisture absorption is the value computed by the weight change before and behind leaving the film 14 for semiconductor back surfaces in the atmosphere of temperature 85 degreeC and relative humidity 85% RH for 168 hours. When the semiconductor back surface film 14 is formed of a resin composition containing a thermosetting resin, the moisture absorption rate is under an atmosphere of a temperature of 85 ° C. and a relative humidity of 85% RH with respect to the film for semiconductor back surface after thermosetting. Means the value when left for 168 hours. Moreover, the said moisture absorption rate can be adjusted by changing the addition amount of an inorganic filler, for example.

  Moreover, as the film 14 for semiconductor back surfaces, it is preferable that the ratio of volatile components is small. Specifically, the weight reduction rate (ratio of weight reduction amount) of the film 14 for semiconductor back surface after the heat treatment is preferably 1% by weight or less, and more preferably 0.8% by weight or less. The heat treatment conditions are, for example, a heating temperature of 250 ° C. and a heating time of 1 hour. By making the weight reduction rate 1% by weight or less, the laser marking property can be improved. For example, in the reflow process, it is possible to suppress or prevent the occurrence of cracks in the flip chip type semiconductor device. The weight reduction rate can be adjusted, for example, by adding an inorganic substance that can reduce the generation of cracks during lead-free solder reflow. In addition, when the film 14 for semiconductor back surfaces is formed with the resin composition containing a thermosetting resin, the said weight reduction rate is the heating temperature 250 degreeC with respect to the film for semiconductor back surfaces after thermosetting, and heating time 1 hour. Means the value when heated under the conditions of

(Peeling layer 12)
Examples of the release layer 12 include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foil and metal plates; plastics such as plastic films and sheets. Base materials; rubber base materials such as rubber sheets; foams such as foam sheets, and laminates thereof [particularly, laminates of plastic base materials and other base materials, or plastic films (or sheets) An appropriate thin leaf body such as a laminate of the above can be used. In the present invention, a plastic substrate such as a plastic film or sheet can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.

  Moreover, as a material of the peeling layer 12, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.

  The release layer 12 can be used by appropriately selecting the same type or different types, and a blend of several types can be used as necessary. Further, the release layer 12 may be subjected to a release treatment so that the release layer 12 can be easily released after the semiconductor wafer 20 or the dicing ring 22 is attached to the back film 14. Further, in order to impart antistatic ability to the release layer 12, a vapor deposition layer of a conductive material having a thickness of about 30 to 500 mm made of metal, alloy, oxide thereof, or the like is provided on the release layer 12. be able to. The release layer 12 may be a single layer or two or more types.

  The thickness of the release layer 12 (total thickness in the case of a laminate) is not particularly limited and can be appropriately selected according to strength, flexibility, purpose of use, and the like, for example, generally 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, particularly about 30 μm to 200 μm, but is not limited thereto.

  The release layer 12 contains various additives (coloring agent, filler, plasticizer, anti-aging agent, antioxidant, surfactant, flame retardant, etc.) as long as the effects of the present invention are not impaired. It may be.

(Ring-shaped adhesive layer 16)
The adhesive layer 16 is formed of an adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives can be suitably used, and acrylic pressure-sensitive adhesives are particularly preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

  In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyl di (meth) acrylate, hexyl di (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer 16 has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. A crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict | limited in particular.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays. Further, instead of using a cross-linking agent, or using a cross-linking agent, it is possible to perform a cross-linking treatment by heating.

  The pressure-sensitive adhesive layer 16 is formed, for example, by using a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the film 14 for a semiconductor back surface, and applying the mixture onto an appropriate separator (such as release paper). Thus, the pressure-sensitive adhesive layer 16 can be formed by a method of forming the pressure-sensitive adhesive layer 16 and transferring (transferring) the pressure-sensitive adhesive layer 16 onto the semiconductor back surface film 14.

  The thickness of the pressure-sensitive adhesive layer 16 is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, particularly preferably 7 μm to 50 μm). When the thickness of the pressure-sensitive adhesive layer 16 is within the above range, an appropriate adhesive force can be exhibited. The pressure-sensitive adhesive layer 16 may be either a single layer or multiple layers.

(Cover liner 18)
The cover liner 18 is peeled off when the semiconductor wafer 20 and the dicing ring 22 are attached. As the cover liner 18, a plastic film (polyethylene terephthalate or the like) or paper whose surface is coated with a release agent such as polyethylene, polypropylene, a fluorine-based release agent, or a long-chain alkyl acrylate release agent can be used. The cover liner 18 can be formed by a conventionally known method. Further, the thickness of the cover liner 18 is not particularly limited.

  Thickness of the film 10 for the semiconductor back surface with the adhesive layer (when the cover liner 18 is provided, the release layer 12, the film 14 for the semiconductor back surface, the adhesive layer 16, the total thickness of the cover liner 18 and the cover liner 18 are provided. If not, the release layer 12, the semiconductor back film 14, and the pressure-sensitive adhesive layer 16 can be selected from the range of 8 μm to 1500 μm, preferably 20 μm to 850 μm (more preferably 31 μm). ˜500 μm, particularly preferably 47 μm to 330 μm).

(Manufacturing method of the film 10 for semiconductor back surfaces with an adhesive layer)
The manufacturing method of the film 10 for semiconductor back surfaces with an adhesive layer which concerns on this Embodiment is demonstrated taking the film 10 for semiconductor back surfaces with an adhesive layer shown in FIG.1 and FIG.2 as an example. First, the release layer 12 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, a forming material for forming the semiconductor back surface film 14 is applied on the release layer 12 and dried (in the case where heat curing is necessary, for example, the heat treatment is performed and the semiconductor is dried). A back film 14 is formed. Examples of the coating method include roll coating, screen coating, and gravure coating. In addition, after forming the film for semiconductor back surface 14 by applying a forming material for forming the film 14 for semiconductor back surface to a release paper or the like subjected to release treatment on the surface, the film 14 for semiconductor back surface is peeled off. 12 may be transferred. Thereby, the film 14 for semiconductor back surfaces can be formed on the peeling layer 12.

  On the other hand, the pressure-sensitive adhesive composition is applied onto release paper so that the thickness after drying becomes a predetermined thickness, and further dried under predetermined conditions (heat-crosslinked as necessary) to form a coating layer. The adhesive layer 16 is formed on the semiconductor back surface film 14 by transferring the coating layer onto the semiconductor back surface film 14. The pressure-sensitive adhesive layer 16 can also be formed on the semiconductor back surface film 14 by directly applying the pressure-sensitive adhesive composition on the semiconductor back surface film 14 and then drying it under predetermined conditions.

  Next, from the pressure-sensitive adhesive layer 16 side, the pressure-sensitive adhesive layer 16 and the semiconductor back surface film 14 are punched into a shape corresponding to the outer diameter of the dicing ring 22. At this time, the release layer 12 is not punched out. Thereafter, the punched adhesive layer 16 and the outer portion of the semiconductor back film 14 are peeled from the release layer 12.

  Next, the pressure-sensitive adhesive layer 16 is punched from the pressure-sensitive adhesive layer 16 side at a location corresponding to the inner diameter of the dicing ring 22. At this time, the semiconductor back film 14 is not punched out. Thereafter, the inner part of the punched adhesive layer 16 is peeled off.

  Next, the cover liner 18 produced by a conventionally known method can be laminated from the pressure-sensitive adhesive layer 16 side to obtain the film 10 for a semiconductor back surface with the pressure-sensitive adhesive layer.

  In addition, the manufacturing method of the film for semiconductor back surfaces with an adhesive layer of this invention is not limited to the method mentioned above, For example, according to the film for semiconductor back surfaces of the shape according to the outer diameter of a semiconductor wafer, and the shape of a dicing ring A ring-shaped pressure-sensitive adhesive layer may be separately manufactured and laminated.

(Semiconductor wafer)
The semiconductor wafer is not particularly limited as long as it is a known or commonly used semiconductor wafer, and can be appropriately selected from semiconductor wafers of various materials. In the present invention, a silicon wafer can be suitably used as the semiconductor wafer.

(Method for manufacturing semiconductor device)
A method for manufacturing a semiconductor device according to the present embodiment will be described below with reference to FIGS. 3-8 is a cross-sectional schematic diagram which shows the manufacturing method of the semiconductor device using the film for semiconductor back surfaces with an adhesive layer concerning this embodiment.

  The method for manufacturing a semiconductor device according to the present embodiment is a method for manufacturing a semiconductor device using the film for semiconductor back surface 10 with an adhesive layer. Specifically, on the flip chip type semiconductor back film 14 on which the adhesive layer 16 is not laminated, the process A for preparing the film 10 for the semiconductor back surface with the adhesive layer, and the adhesive layer 16 inside the adhesive layer 16; Step B for attaching the semiconductor wafer 20, Step C for attaching the dicing ring 22 to the adhesive layer 16, and Step D for performing laser marking on the flip-chip type semiconductor back film 14 after the Step B and Step C. And at least.

[Process A (Preparation of film 10 for semiconductor back surface with adhesive layer)]
First, the film 10 for semiconductor back surfaces with an adhesive layer (refer FIG. 1, FIG. 2) is prepared. The film 10 for semiconductor back surface with an adhesive layer can be manufactured with the manufacturing method of the film 10 for semiconductor back surfaces with an adhesive layer mentioned above.

[Process B (Mounting Process)]
Next, the cover liner 18 provided on the film 14 for semiconductor back surface and the adhesive layer 16 of the film 10 for semiconductor back surface with the adhesive layer is peeled off, and as shown in FIG. The semiconductor wafer 20 is affixed on the flip chip type semiconductor back film 14 on the inner side where the adhesive layer 16 is not laminated. Specifically, for example, light (for example, infrared rays) is irradiated in the vertical direction with respect to the film 10 for semiconductor back surface with the pressure-sensitive adhesive layer to be conveyed, and the film for semiconductor back surface 14 of the semiconductor back surface 14 is based on the location where the transmittance has changed. After detecting the position, the semiconductor wafer 20 is affixed on the flip-chip type semiconductor back film 14 on the inner side of the adhesive layer 16 where the adhesive layer 16 is not laminated. The alignment can also be performed by an image recognition device. At this time, the semiconductor back surface film 14 is in an uncured state (including a semi-cured state). The semiconductor back film 14 is attached to the back surface of the semiconductor wafer 20. The back surface of the semiconductor wafer 20 means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface). Although the sticking method is not specifically limited, the method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll.

[Process C (Dicing Ring Pasting Process)]
Next, as shown in FIG. 3, the dicing ring 22 is pasted on the ring-shaped pressure-sensitive adhesive layer 16 corresponding to the dicing ring 22. Specifically, for example, light (for example, infrared rays) is irradiated in the vertical direction with respect to the film 10 for semiconductor back surface with the pressure-sensitive adhesive layer being conveyed, and the position of the pressure-sensitive adhesive layer 16 is based on the location where the transmittance has changed. Then, the dicing ring 22 is pasted on the pressure-sensitive adhesive layer 16. The alignment can also be performed by an image recognition device. Note that the order of step B and step C may be reversed.

[Step X (peeling layer peeling step)]
Next, the peeling layer 12 is peeled from the film 14 for semiconductor back surface. At this time, since the dicing ring 22 is affixed to the film 14 for semiconductor back surface through the adhesive layer 16, it can prevent that a wrinkle etc. generate | occur | produce in the film 14 for semiconductor back surface.

[Process D (Laser Marking Process)]
Next, as shown in FIG. 4, laser marking is performed on the film 14 for a semiconductor back surface by irradiating a laser beam 24. Laser marking is performed on the surface opposite to the surface on which the semiconductor wafer 20 of the film 14 for semiconductor back surface is attached. Specifically, for example, light (for example, infrared rays) is irradiated in the vertical direction with respect to the film 10 for semiconductor back surface with the pressure-sensitive adhesive layer to be conveyed, and the film for semiconductor back surface 14 of the semiconductor back surface 14 is based on the location where the transmittance has changed. After detecting the position, laser marking is performed at a predetermined position based on the position. The alignment can also be performed by an image recognition device. At the stage where the process B and the process C are completed, the semiconductor wafer 20 and the semiconductor back surface film 14 are not separated. Therefore, once the semiconductor wafer 20 and the semiconductor back surface film 14 are positioned, laser marking is performed on all the semiconductor chips 21 with the semiconductor back surface film 14 obtained from the semiconductor wafer 20 with the semiconductor back surface film 14. It can be carried out. As a result, productivity can be improved as compared with a method in which the semiconductor chip with the film for semiconductor back surface after being singulated is individually positioned and laser marking is performed. Further, after the dicing ring 22 is attached to the pressure-sensitive adhesive layer 16 (after step C), laser marking is performed on the semiconductor back surface film 14 (step D is performed). It is pasted. Therefore, the semiconductor back surface film 14 can be reliably fixed while maintaining the positional relationship with the semiconductor wafer, and the marking positioning accuracy during laser marking can be maintained high. Moreover, since laser marking is performed on the film 14 for semiconductor back surface after the peeling layer 12 is peeled (after the process X) (the process D is performed), the laser light is not scattered on the peeling layer 12. Therefore, it is possible to perform highly accurate laser marking. For laser marking, a known laser marking apparatus can be used. As the laser, various lasers such as a gas laser, a solid laser, and a liquid laser can be used. Specifically, the gas laser is not particularly limited, and a known gas laser can be used, but a carbon dioxide laser (CO ₂ laser), an excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser). Etc.) are preferred. The solid laser is not particularly limited, and a known solid laser can be used, but a YAG laser (Nd: YAG laser or the like) and a YVO ₄ laser are preferable.

  In addition, although this embodiment demonstrated the case where laser marking was performed after peeling the peeling layer 12, laser marking was performed without peeling the peeling layer 12, and after that (for example, affixing the dicing tape mentioned later) It may be peeled off before the process. In this case, it can prevent more suitably that wrinkles etc. generate | occur | produce in the film 14 for semiconductor back surfaces.

[Process E (Dicing Tape Application Process)]
Next, as shown in FIG. 5, the dicing tape 3 is attached to the semiconductor back surface film 14. As the dicing tape 3, a conventionally known one in which an adhesive layer 32 is laminated on a base material 31 can be used. Although it does not specifically limit as a material of the base material 31, For example, the thing similar to the peeling layer 12 can be used. The material of the pressure-sensitive adhesive layer 32 is not particularly limited, but for example, the same material as that of the pressure-sensitive adhesive layer 16 can be used. In addition, about the laminated structure of a dicing tape, it is not limited to a laminated structure like the dicing tape 3, A conventionally well-known thing can be used suitably. The affixing is performed by using the surface opposite to the surface on which the semiconductor wafer 20 of the film 14 for semiconductor back surface is affixed and the adhesive layer 32 of the dicing tape 3 as the affixing surface. Although the sticking method is not specifically limited, the method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll.

[Process F (Dicing Process)]
Next, as shown in FIG. 6, the semiconductor wafer 20 is diced together with the film for semiconductor back surface 14 on which laser marking has been applied. As a result, the semiconductor wafer 20 is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip 21 is manufactured. For example, the dicing is performed from the circuit surface side of the semiconductor wafer 20 according to a conventional method. Further, in this step, for example, a cutting method called full cut that cuts halfway through the base material 31 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer 20 is bonded and fixed with excellent adhesion by the semiconductor back surface film 14, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 20 can be suppressed. In addition, when the film 14 for semiconductor back surfaces is formed with the resin composition containing an epoxy resin, even if it cut | disconnects by dicing, it suppresses that the paste of the film for semiconductor back surfaces (adhesive layer) protrudes in the cut surface. Or it can be prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding the dicing tape 3, the expanding can be performed using a conventionally known expanding apparatus. The expanding device includes a donut-shaped outer ring that can push down the dicing tape 3 downwardly through the dicing ring 22 and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape 3. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Process G (Pickup Process)]
In order to collect the semiconductor chip 21 fixed to the dicing tape 3, as shown in FIG. 7, the semiconductor chip 21 is picked up, and the semiconductor chip 21 is peeled off from the dicing tape 3 together with the semiconductor back surface film 14. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 21 from the base 31 side of the dicing tape 3 with a needle and picking up the pushed-up semiconductor chips 21 with a pick-up device may be mentioned. Note that the back surface of the picked-up semiconductor chip 21 is protected by the film 14 for semiconductor back surface.

[Flip chip connection process]
As shown in FIG. 8, the picked-up semiconductor chip 21 is fixed to an adherend such as a substrate by a flip chip bonding method (flip chip mounting method). Specifically, the semiconductor chip 21 is always placed on the adherend 6 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip 21 faces the adherend 6. Fix according to law. For example, the bump 51 formed on the circuit surface side of the semiconductor chip 21 is brought into contact with a bonding conductive material (solder or the like) 61 attached to the connection pad of the adherend 6 while pressing the conductive material. By melting, it is possible to secure electrical conduction between the semiconductor chip 21 and the adherend 6 and fix the semiconductor chip 21 to the adherend 6 (flip chip bonding step). At this time, a gap is formed between the semiconductor chip 21 and the adherend 6, and the gap distance is generally about 30 μm to 300 μm. After the flip chip bonding (flip chip connection) of the semiconductor chip 21 on the adherend 6, the facing surface and the gap between the semiconductor chip 21 and the adherend 6 are cleaned, and a sealing material (sealing) is placed in the gap. It is important to seal by filling with a stop resin or the like.

  As the adherend 6, various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used. The material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.

  In the flip chip bonding process, the material of the bump or the conductive material is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal. Materials, solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  In the flip chip bonding process, the conductive material is melted to connect the bumps on the circuit surface side of the semiconductor chip 21 and the conductive material on the surface of the adherend 6. The temperature is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). By forming the semiconductor back surface film 14 with an epoxy resin or the like, it is possible to have heat resistance that can withstand high temperatures in the flip chip bonding process.

  In this step, it is preferable to clean the facing surface (electrode forming surface) and the gap between the semiconductor chip 21 and the adherend 6. The cleaning liquid used for the cleaning is not particularly limited, and examples thereof include an organic cleaning liquid and an aqueous cleaning liquid. The film 14 for semiconductor back surface has solvent resistance to the cleaning liquid, and it is preferable to use a film that does not substantially have solubility in these cleaning liquids. In this case, various cleaning liquids can be used as the cleaning liquid, and no special cleaning liquid is required, and the cleaning liquid can be cleaned by a conventional method.

[Sealing process]
Next, a sealing step for sealing the gap between the flip-chip bonded semiconductor chip 21 and the adherend 6 is performed. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes. In the heat treatment in this step, not only the sealing resin but also the thermosetting of the semiconductor back surface film 14 is performed at the same time. Thereby, both sealing resin and the film 14 for semiconductor back surfaces carry out shrinkage | curing shrinkage with progress of thermosetting. As a result, the stress applied to the semiconductor chip 21 due to the curing shrinkage of the sealing resin can be offset or alleviated by the semiconductor backside film 14 being cured and shrunk. Moreover, according to the said process, the film 14 for semiconductor back surfaces can be thermoset completely or substantially completely, and it can be made to adhere to the back surface of a semiconductor element with the outstanding adhesiveness. Furthermore, since the film for semiconductor back surface 14 according to the present invention can be thermally cured together with the sealing material in the sealing step even in an uncured state, the film for semiconductor back surface 14 is thermally cured. There is no need to add a new process.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

  Since the semiconductor device manufactured using the film 10 for a semiconductor back surface with an adhesive layer is a semiconductor device mounted by a flip chip mounting method, it is thinner and smaller than a semiconductor device mounted by a die bonding mounting method. It has become a shape. For this reason, it can use suitably as various electronic devices and electronic components, or those materials and members. Specifically, as an electronic device using the flip-chip mounted semiconductor device of the present invention, a so-called “mobile phone” or “PHS”, a small computer (for example, a so-called “PDA” (personal digital assistant)), a so-called "Notebook PC", so-called "Netbook (trademark)", so-called "wearable computer", etc.), "mobile phone" and small electronic devices integrated with a computer, so-called "digital camera (trademark)", so-called "digital" Mobile devices such as video cameras, small TVs, small game devices, small digital audio players, so-called “electronic notebooks”, so-called “electronic dictionaries”, so-called “electronic books” electronic device terminals, small digital-type watches, etc. Type electronic devices (portable electronic devices), but of course It may be an electronic device other than a mobile type (such as a setting type) (for example, a so-called “disc top PC”, a flat-screen TV, a recording / playback electronic device (hard disk recorder, DVD player, etc.), a projector, a micromachine, etc.) . Examples of materials and members of electronic components or electronic devices / electronic components include so-called “CPU” members, members of various storage devices (so-called “memory”, hard disks, etc.), and the like.

DESCRIPTION OF SYMBOLS 3 Dicing tape 10 Film for semiconductor back surfaces with adhesive layer 12 Peeling layer 14 Flip chip type film for semiconductor back surface 16 Adhesive layer 18 (ring shape) Cover liner 20 Semiconductor wafer 21 Semiconductor chip 22 Dicing ring 51 Circuit surface of semiconductor chip Bump 6 formed on side Adhered body 61 Conductive material for bonding deposited on connection pad of adherend

Claims (4)

Step A of preparing a film for a semiconductor back surface with an adhesive layer comprising a film for a flip chip type semiconductor back surface and a ring-shaped adhesive layer provided on the outer periphery of the film for a flip chip type semiconductor back surface;
Step B for attaching a semiconductor wafer on the flip chip type semiconductor back film on the inner side of the adhesive layer, on which the adhesive layer is not laminated,
Step C for attaching a dicing ring to the adhesive layer;
After the process B and the process C, a process D for performing laser marking on the flip chip type semiconductor back film is provided. Step E for attaching a dicing tape to the flip chip type semiconductor back film;
The method for manufacturing a semiconductor device according to claim 1, further comprising: a step F of dicing the semiconductor wafer together with a film for flip chip type semiconductor back surface to which laser marking is applied. Process G for peeling a semiconductor element with a flip-chip type semiconductor back surface film separated by dicing from a dicing tape
The method for manufacturing a semiconductor device according to claim 2, comprising: The film for semiconductor back surface with an adhesive layer is provided with a release layer on the surface on the flip chip type semiconductor back film side,
After Step B and Step C, the method includes Step X for peeling the release layer,
The method of manufacturing a semiconductor device according to claim 1, wherein the step D is performed after the step X. 5.

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