WO2012094780A8 - Soi lateral mosfet device and integrated circuit thereof - Google Patents
Soi lateral mosfet device and integrated circuit thereof Download PDFInfo
- Publication number
- WO2012094780A8 WO2012094780A8 PCT/CN2011/000232 CN2011000232W WO2012094780A8 WO 2012094780 A8 WO2012094780 A8 WO 2012094780A8 CN 2011000232 W CN2011000232 W CN 2011000232W WO 2012094780 A8 WO2012094780 A8 WO 2012094780A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- region
- active layer
- body region
- gate structure
- integrated circuit
- Prior art date
Links
- 210000000746 body region Anatomy 0.000 abstract 7
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
A silicon-on-insulator (SOI) lateral MOSFET device and the integrated circuit thereof are provided. In said device, an active layer (3) includes a body region (9) and a drain region (12) which are located on the surface of the active layer (3) respectively and are separated from each other, and also a planar gate channel region (14'), a source region (11a), a body contact region (10) and a source region (11b) which are located on the surface of the body region (9) and are set in sequence from the side adjacent to the drain region (12). The active layer (3) located between the body region (9) and the drain region (12) is a drift region, wherein the drift region and the body region (9) have opposite conduction types. A semiconductor buried layer (4) is set beneath the surface of the active layer (3), wherein the semiconductor buried layer (4) and the body region (9) have the same conduction type. Said device has a trench gate structure (8) and a planar gate structure (8'), wherein the trench gate structure (8) contacts with the body region (9) and longitudinally extends from the surface of the active layer (3) to a dielectric buried layer (2), and the planar gate structure (8') is formed above the body region (9). Said device has the advantages of high withstand voltage, low specific on-resistance, low power consumption, low cost, and easy miniaturization and integration.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110003586 CN102148251B (en) | 2011-01-10 | 2011-01-10 | Semiconductor on insulator (SOI) lateral metal-oxide-semiconductor field-effect-transistor (MOSFET) device and integrated circuit |
CN201110003586.3 | 2011-01-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012094780A1 WO2012094780A1 (en) | 2012-07-19 |
WO2012094780A8 true WO2012094780A8 (en) | 2012-09-07 |
Family
ID=44422390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2011/000232 WO2012094780A1 (en) | 2011-01-10 | 2011-02-15 | Soi lateral mosfet device and integrated circuit thereof |
Country Status (2)
Country | Link |
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CN (1) | CN102148251B (en) |
WO (1) | WO2012094780A1 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102306657A (en) * | 2011-10-13 | 2012-01-04 | 电子科技大学 | Insulated gate bipolar transistor with floating buried layer |
US8518764B2 (en) * | 2011-10-24 | 2013-08-27 | Freescale Semiconductor, Inc. | Semiconductor structure having a through substrate via (TSV) and method for forming |
CN102738240B (en) * | 2012-06-04 | 2015-05-27 | 电子科技大学 | Bigrid power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device |
CN102810553B (en) * | 2012-08-21 | 2015-03-25 | 重庆大学 | Groove type field oxide power MOS (metal oxide semiconductor) device with ultra low conduction resistance |
US8785988B1 (en) * | 2013-01-11 | 2014-07-22 | Macronix International Co., Ltd. | N-channel metal-oxide field effect transistor with embedded high voltage junction gate field-effect transistor |
CN103325820A (en) * | 2013-06-14 | 2013-09-25 | 四川长虹电器股份有限公司 | Double-gate SOI-LIGBT device with P-type buried layer |
CN104241365A (en) * | 2014-04-10 | 2014-12-24 | 电子科技大学 | SOI horizontal power MOSFET device |
CN103915506B (en) * | 2014-04-28 | 2016-08-31 | 重庆大学 | A kind of double grid LDMOS device with longitudinal NPN structure |
CN105161420B (en) * | 2015-07-13 | 2017-10-13 | 电子科技大学 | A kind of manufacture method of lateral MOSFET device |
CN108242467B (en) * | 2016-12-27 | 2020-05-22 | 无锡华润上华科技有限公司 | LDMOS device and manufacturing method thereof |
US10573744B1 (en) | 2017-10-03 | 2020-02-25 | Maxim Integrated Products, Inc. | Self-aligned, dual-gate LDMOS transistors and associated methods |
CN108039371A (en) * | 2017-12-01 | 2018-05-15 | 德淮半导体有限公司 | LDMOS transistor and its manufacture method |
CN108231902A (en) * | 2018-01-05 | 2018-06-29 | 桂林电子科技大学 | More stacked layer power devices with series connection slot grid structure |
WO2019139619A1 (en) * | 2018-01-12 | 2019-07-18 | Intel Corporation | Source contact and channel interface to reduce body charging from band-to-band tunneling |
CN109103249A (en) * | 2018-04-04 | 2018-12-28 | 北京大学 | A kind of high current GaN high electron mobility transistor optimizing plane figure and structure |
CN109192778A (en) * | 2018-08-01 | 2019-01-11 | 长沙理工大学 | A kind of separate gate slot type power device with double longitudinal field plates |
CN110112217A (en) * | 2019-04-15 | 2019-08-09 | 杭州电子科技大学 | Anti-single particle burns LDMOS device |
CN110993691A (en) * | 2019-11-25 | 2020-04-10 | 西安电子科技大学 | Double-channel transverse super-junction double-diffusion metal oxide wide band gap semiconductor field effect transistor and manufacturing method thereof |
CN111081777A (en) * | 2019-11-25 | 2020-04-28 | 西安电子科技大学 | Double-channel transverse super-junction double-diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof |
CN111106178B (en) * | 2019-12-11 | 2021-12-03 | 电子科技大学 | Dual channel lateral power MOSFET device with high dielectric constant passivation layer |
CN111477680A (en) * | 2020-04-23 | 2020-07-31 | 西安电子科技大学 | Double-channel uniform electric field modulation transverse double-diffusion metal oxide wide-band-gap semiconductor field effect transistor and manufacturing method thereof |
CN111477681A (en) * | 2020-04-23 | 2020-07-31 | 西安电子科技大学 | Double-channel uniform electric field modulation transverse double-diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof |
CN113284954B (en) * | 2021-07-22 | 2021-09-24 | 成都蓉矽半导体有限公司 | Silicon carbide MOSFET with high channel density and preparation method thereof |
CN117810266B (en) * | 2024-02-29 | 2024-05-03 | 电子科技大学 | Anti-radiation lateral diffusion metal oxide semiconductor based on standard process |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6509220B2 (en) * | 2000-11-27 | 2003-01-21 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
JP4322453B2 (en) * | 2001-09-27 | 2009-09-02 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP3783156B2 (en) * | 2001-10-17 | 2006-06-07 | 株式会社日立製作所 | Semiconductor device |
US6800917B2 (en) * | 2002-12-17 | 2004-10-05 | Texas Instruments Incorporated | Bladed silicon-on-insulator semiconductor devices and method of making |
JP4590884B2 (en) * | 2003-06-13 | 2010-12-01 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
CN101060136A (en) * | 2007-06-05 | 2007-10-24 | 北京大学 | A double-fin channel wrap gate field-effect transistor and its manufacture method |
WO2010014281A1 (en) * | 2008-07-30 | 2010-02-04 | Maxpower Semiconductor Inc. | Semiconductor on insulator devices containing permanent charge |
KR101009399B1 (en) * | 2008-10-01 | 2011-01-19 | 주식회사 동부하이텍 | Lateral DMOS transistor and method of fabricating thereof |
US7829947B2 (en) * | 2009-03-17 | 2010-11-09 | Alpha & Omega Semiconductor Incorporated | Bottom-drain LDMOS power MOSFET structure having a top drain strap |
CN101771085A (en) * | 2010-01-20 | 2010-07-07 | 电子科技大学 | High-voltage semi-conductor device and manufacturing method thereof |
CN101840935B (en) * | 2010-05-17 | 2012-02-29 | 电子科技大学 | SOI (Silicon-on-insulator) MOSFET lateral (metal-oxide-semiconductor field effect transistor) device |
-
2011
- 2011-01-10 CN CN 201110003586 patent/CN102148251B/en not_active Expired - Fee Related
- 2011-02-15 WO PCT/CN2011/000232 patent/WO2012094780A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN102148251A (en) | 2011-08-10 |
CN102148251B (en) | 2013-01-30 |
WO2012094780A1 (en) | 2012-07-19 |
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