WO2012093467A1 - Dispositif électroluminescent organique et son procédé de production - Google Patents

Dispositif électroluminescent organique et son procédé de production Download PDF

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Publication number
WO2012093467A1
WO2012093467A1 PCT/JP2011/007323 JP2011007323W WO2012093467A1 WO 2012093467 A1 WO2012093467 A1 WO 2012093467A1 JP 2011007323 W JP2011007323 W JP 2011007323W WO 2012093467 A1 WO2012093467 A1 WO 2012093467A1
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organic
protective layer
layer
display device
substrate
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PCT/JP2011/007323
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English (en)
Japanese (ja)
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剛 平瀬
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シャープ株式会社
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

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  • the present invention relates to an organic EL display device including an organic electroluminescence element (organic electroluminescence element: hereinafter referred to as “organic EL element”) and a method for manufacturing the same.
  • organic electroluminescence element organic electroluminescence element: hereinafter referred to as “organic EL element”
  • organic EL display devices have attracted attention as next-generation flat panel display devices such as full-color displays.
  • This organic EL display device is a self-luminous display device, has excellent viewing angle characteristics, high visibility, low power consumption, and can be reduced in thickness, so that demand is increasing.
  • the organic EL display device includes a plurality of organic EL elements arranged in a predetermined arrangement, and each of the plurality of organic EL elements includes a first electrode (anode) formed on an insulating substrate, a first electrode An organic layer having a light emitting layer formed on one electrode and a second electrode (cathode) formed on the organic layer are provided.
  • an organic EL display device having a structure for protecting the organic EL element from these acids and alkalis has been proposed. More specifically, for example, an organic EL element in which an organic layer is sandwiched between a pair of opposing electrodes, and a polyparaxylylene or a derivative thereof (hereinafter referred to as parylene) provided on the organic EL element.
  • An organic EL display device including a protective layer formed by the above is disclosed. And by such a structure, since parylene has high solvent resistance and chemical resistance, it describes that an organic EL element can be protected (for example, refer patent document 1).
  • the present invention has been made in view of the above-described problems, and an object thereof is to provide an organic EL display device capable of preventing deterioration of characteristics of an organic EL element due to an acid or an alkali, and a manufacturing method thereof.
  • an organic EL display device of the present invention includes a first substrate, a second substrate provided opposite to the first substrate, a first substrate, a first substrate, An organic EL element provided between the two substrates, a first protective layer formed on the first substrate and covering the surface of the organic EL element, and a second protective layer formed on the first protective layer
  • the first protective layer is made of parylene
  • the second protective layer is made of aluminum oxide.
  • the first protective layer made of parylene is provided so as to cover the organic EL element, and further, the second protective layer made of aluminum oxide is provided on the first protective layer. It is possible to reliably prevent the entry of acid and alkali contained in the outgas from the inside of the organic EL display device and the entry of acid and alkali from the outside of the organic EL display device to the element.
  • the thickness of the second protective layer may be 10 nm to 10 ⁇ m.
  • the acid resistance and alkali resistance of the organic EL element can be reliably ensured without increasing the thickness of the second protective layer.
  • the first protective layer may have a thickness of 500 nm to 5 ⁇ m.
  • a third protective layer made of silicon nitride may be formed on the second protective layer.
  • the third protective layer made of silicon nitride is provided on the second protective layer, it is possible to more reliably prevent acid and alkali from entering the organic EL element.
  • the thickness of the third protective layer may be 500 nm to 10 ⁇ m.
  • the acid resistance and alkali resistance of the organic EL element can be more reliably ensured without increasing the thickness of the third protective layer.
  • the method for producing an organic EL display device of the present invention includes an organic EL element forming step for forming an organic EL element on a substrate, and a first protective layer that is made of parylene and covers the organic EL element on the substrate. It is characterized by comprising at least a protective layer forming step and a second protective layer forming step of forming a second protective layer made of aluminum oxide on the first protective layer.
  • the first protective layer made of parylene is formed so as to cover the organic EL element, and further, the second protective layer made of aluminum oxide is formed on the first protective layer.
  • the first protective layer may be formed by a chemical vapor deposition method in the first protective layer forming step.
  • the second protective layer may be formed by an atomic layer deposition method (ALD method) in the second protective layer forming step.
  • ALD method atomic layer deposition method
  • the organic EL display device manufacturing method of the present invention further includes a third protective layer forming step of forming a third protective layer made of silicon nitride on the second protective layer after the second protective layer forming step. May be.
  • an organic EL display device that can more reliably prevent the entry of acid and alkali into the organic EL element. Can be provided.
  • the third protective layer may be formed by a sputtering method or a chemical vapor deposition method (CVD method).
  • an organic EL display device having a protective layer it is possible to prevent deterioration of the characteristics of the organic EL element due to the entry of acid or alkali.
  • FIG. 1 is a plan view of an organic EL display device according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG. It is sectional drawing for demonstrating the organic layer which comprises the organic EL element with which the organic EL display apparatus which concerns on the 1st Embodiment of this invention is provided. It is a figure for demonstrating the manufacturing method of the organic electroluminescence display which concerns on the 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing method of the organic electroluminescence display which concerns on the 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing method of the organic electroluminescence display which concerns on the 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing method of the organic electroluminescence display which concerns on the 1st Embodiment of this invention.
  • FIG. 1 is a plan view of an organic EL display device according to the first embodiment of the present invention
  • FIG. 2 is a cross-sectional view taken along the line AA in FIG.
  • FIG. 3 is sectional drawing for demonstrating the organic layer which comprises the organic EL element with which the organic EL display apparatus which concerns on the 1st Embodiment of this invention is provided.
  • the organic EL display device 1 is formed on an element substrate 30 that is a first substrate, a sealing substrate 20 that is a second substrate facing the element substrate 30, and the element substrate 30.
  • an organic EL element 4 provided between the element substrate 30 and the sealing substrate 20 is provided.
  • the element substrate 30 has a display region D in which the organic EL elements 4 are arranged.
  • the organic EL elements 4 are formed in a matrix on the surface of the element substrate 30 facing the sealing substrate 20.
  • the element substrate 30 and the sealing substrate 20 are formed of an insulating material such as glass or plastic, for example.
  • the organic EL element 4 includes a first electrode 6 (anode) provided on the surface of the element substrate 30, an organic layer 7 provided on the surface of the first electrode 6, And a second electrode 8 (cathode) provided on the surface of the organic layer 7.
  • a plurality of first electrodes 6 are formed in a matrix at predetermined intervals on the surface of the element substrate 30, and each of the plurality of first electrodes 6 constitutes each pixel region of the organic EL display device 1. .
  • the first electrode 6 is formed of, for example, Au, Ni, Pt, ITO (indium-tin oxide), or a laminated film of ITO and Ag.
  • the organic layer 7 is formed on the surface of each first electrode 6 partitioned in a matrix. As shown in FIG. 3, the organic layer 7 is formed on the hole injection layer 9, the hole transport layer 10 formed on the surface of the hole injection layer 9, and the surface of the hole transport layer 10. , A light emitting layer 11 that emits one of red light, green light, and blue light, an electron transport layer 12 formed on the surface of the light emitting layer 11, and an electron injection layer formed on the surface of the electron transport layer 12 13.
  • the organic layer 7 is configured by sequentially stacking the hole injection layer 9, the hole transport layer 10, the light emitting layer 11, the electron transport layer 12, and the electron injection layer 13.
  • the hole injection layer 9 is for increasing the efficiency of hole injection into the light emitting layer 11.
  • Examples of the material for forming the hole injection layer 9 include benzine, styrylamine, triphenylamine, porphyrin, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, anthracene, fluorenone, Examples include hydrazone, stilbene, triphenylene, azatriphenylene, or derivatives thereof, or heterocyclic conjugated monomers, oligomers, or polymers such as polysilane compounds, vinylcarbazole compounds, thiophene compounds, or aniline compounds. .
  • the hole transport layer 10 is for increasing the efficiency of hole injection into the light emitting layer 11, as with the hole injection layer 9 described above.
  • the thing similar to the hole injection layer 9 can be used.
  • the light emitting layer 11 is a region in which holes and electrons are injected from each of the two electrodes when a voltage is applied by the first electrode 6 and the second electrode 8, and the holes and electrons are recombined.
  • the light emitting layer 11 is formed of a material having high luminous efficiency, and is formed of, for example, an organic material such as a low molecular fluorescent dye, a fluorescent polymer, or a metal complex.
  • tris (8-quinolinolato) aluminum complex, bis (benzoquinolinolato) beryllium complex, tri (dibenzoylmethyl) phenanthroline europium complex ditoluyl vinyl biphenyl are mentioned.
  • the electron transport layer 12 is for transporting electrons injected from the second electrode 8 to the light emitting layer 11.
  • Examples of the material forming the electron transport layer 12 include quinoline, perylene, phenanthroline, bisstyryl, pyrazine, triazole, oxazole, oxadiazole, fluorenone, and derivatives or metal complexes thereof.
  • examples include tris (8-hydroxyquinoline) aluminum, anthracene, naphthalene, phenanthrene, pyrene, anthracene, perylene, butadiene, coumarin, acridine, stilbene, 1,10-phenanthroline, or derivatives or metal complexes thereof. It is done.
  • the electron injection layer 13 is for transporting electrons injected from the second electrode 8 to the light emitting layer 11, similarly to the electron transport layer 12 described above, and the material for forming the electron injection layer 13 is described above.
  • the same material as the electron transport layer 12 can be used.
  • the second electrode 8 has a function of injecting electrons into the organic layer 7.
  • the second electrode 8 is made of, for example, a magnesium alloy (such as MgAg), an aluminum alloy (such as AlLi, AlCa, or AlMg), metallic calcium, or a metal having a small work function.
  • the organic EL display device 1 is provided with a protective layer 18 for protecting the organic EL element 4 from acid and alkali on the surface of the organic EL element 4.
  • the protective layer 18 includes a first protective layer 15 provided so as to cover the organic EL element 4 and a second protective layer 16 provided on the surface of the first protective layer 15.
  • the first protective layer 15 is made of parylene. As described above, this parylene has high solvent resistance and chemical resistance, and among organic materials, the gas permeability is particularly low. Therefore, the first protective layer 15 formed of parylene is used as the organic EL element. 4 so as to cover the organic EL element 4, deterioration of the organic layer 7 due to the entry of acid or alkali into the organic EL element 4 can be suppressed.
  • the first protective layer 15 can be formed by a chemical vapor deposition method (CVD method).
  • CVD method chemical vapor deposition method
  • a substrate serving as a reference for vapor deposition is disposed inside the vapor deposition unit, and the raw material vaporization unit is a raw material.
  • a gas dimer obtained by sublimating a solid dimer of diparaxylylene can be formed by thermally decomposing in a thermal decomposition part to generate diradical paraxylylene and adsorbing it to a substrate.
  • the second protective layer 16 is made of aluminum oxide (Al 2 O 3 ).
  • an organic EL display for the organic EL element 4 is provided by providing the second protective layer 16 formed of aluminum oxide on the surface of the first protective layer formed of parylene. The entry of acid or alkali contained in the outgas from the inside of the apparatus 1 or the entry of acid or alkali from the outside can be prevented.
  • the first protective layer 15 formed by the method described above is provided so as to cover the organic EL element 4, and the second protective layer 16 formed of aluminum oxide is further provided on the surface of the first protective layer 15. It is possible to reliably prevent acid and alkali from entering the element 4.
  • the second protective layer 16 can be formed by an atomic layer deposition method (ALD method).
  • ALD method for example, first, a reaction vessel in which a target substrate is placed is placed in a reduced pressure state (0.1 Torr or less), and the substrate is heated to a predetermined temperature (50 to 500 ° C.).
  • Si raw material gas which is a metal raw material gas for film formation
  • Si raw material gas is supplied to the reaction vessel, and while supplying an inert gas (nitrogen gas, etc.) to the reaction vessel, the Si raw material gas is exhausted to become an inert gas.
  • the ozone gas and water vapor, which are oxidant raw material gases, are simultaneously supplied to the reaction vessel.
  • the water vapor may be supplied to the reaction vessel after the ozone gas is supplied. Next, while supplying an inert gas (nitrogen gas or the like) to the reaction vessel, the ozone gas and water vapor are exhausted and replaced with the inert gas. A series of steps is taken as one cycle to form a one-atom layer metal oxide thin film, which is repeated a plurality of cycles to form a multi-atom layer metal oxide thin film.
  • an inert gas nitrogen gas or the like
  • pinholes and cracks may be formed in the second protective layer 16, but when the second protective layer 16 is formed by the atomic layer deposition method, Such pinholes are not formed.
  • the thickness of the first protective layer 15 is preferably 500 nm to 5 ⁇ m. Further, from the viewpoint of ensuring the acid resistance and alkali resistance of the organic EL element 4 without increasing the thickness of the second protective layer 16, the thickness of the second protective layer 16 is 10 nm to 10 ⁇ m. preferable.
  • the thickness of the protective layer 18 is preferably 5 ⁇ m to 25 ⁇ m.
  • an adhesive layer 17 is provided on the surface of the second protective layer 16, and faces the element substrate 30 via the adhesive layer 17.
  • the sealing substrate 20 is bonded.
  • the adhesive layer 17 functions as a resin sealing film.
  • 4 to 10 are views for explaining a method of manufacturing the organic EL display device according to the first embodiment of the present invention.
  • an ITO film is patterned by a sputtering method on an element substrate 30 such as a glass substrate having a substrate size of 300 ⁇ 400 mm and a thickness of 0.7 mm, and the first electrode 6 is formed.
  • the film thickness of the first electrode 6 is, for example, about 150 nm.
  • the organic layer 7 including the light emitting layer 11 and the second electrode 8 are formed on the first electrode 6 by vapor deposition using a metal mask.
  • the element substrate 30 provided with the first electrode 6 is placed in the chamber of the vapor deposition apparatus.
  • the inside of the chamber of the vapor deposition apparatus is maintained at a vacuum degree of 1 ⁇ 10 ⁇ 5 to 1 ⁇ 10 ⁇ 4 (Pa) by a vacuum pump.
  • the element substrate 30 provided with the first electrode 6 is installed in a state where two sides are fixed by a pair of substrate receivers attached in the chamber.
  • the vapor deposition materials of the hole injection layer 9, the hole transport layer 10, the light emitting layer 11, the electron transport layer 12, and the electron injection layer 13 are sequentially evaporated from the vapor deposition source, so that the hole injection layer 9, the hole
  • the organic layer 7 is formed on the first electrode 6 in the pixel region as shown in FIG. 5.
  • Element 4 is formed.
  • a crucible charged with each evaporation material can be used as the evaporation source.
  • the crucible is installed in the lower part of the chamber, and the crucible is equipped with a heater, and the crucible is heated by the heater.
  • the various vapor deposition materials charged in the crucible become evaporated molecules and jump out upward in the chamber.
  • m-MTDATA common to all RGB pixels
  • a hole injection layer 9 made of 4,4,4-tris (3-methylphenylphenylamino) triphenylamine) is formed with a film thickness of, for example, 25 nm through a mask.
  • a hole transport layer 10 made of ⁇ -NPD (4,4-bis (N-1-naphthyl-N-phenylamino) biphenyl) is common to all pixels of RGB.
  • the film is formed with a film thickness of 30 nm through the mask.
  • red light emitting layer 11 30 weight of 2,6-bis ((4'-methoxydiphenylamino) styryl) -1,5-dicyanonaphthalene (BSN) is added to di (2-naphthyl) anthracene (ADN).
  • BSN 2,6-bis ((4'-methoxydiphenylamino) styryl) -1,5-dicyanonaphthalene
  • ADN di (2-naphthyl) anthracene
  • a mixture of 5% by weight of coumarin 6 in ADN is formed on the hole transport layer 10 formed in the pixel region through a mask with a film thickness of, for example, 30 nm. .
  • the blue light-emitting layer 11 is prepared by mixing ADN with 2.5% by weight of 4,4′-bis (2- ⁇ 4- (N, N-diphenylamino) phenyl ⁇ vinyl) biphenyl (DPAVBi).
  • DPAVBi 4,4′-bis (2- ⁇ 4- (N, N-diphenylamino) phenyl ⁇ vinyl) biphenyl
  • a film having a thickness of 30 nm is formed on the hole transport layer 10 formed in the pixel region through the mask.
  • 8-hydroxyquinoline aluminum (Alq3) is formed as an electron transport layer 12 in a thickness of, for example, 20 nm through a mask in common to all the RGB pixels.
  • lithium fluoride (LiF) is formed as an electron injection layer 13 on the electron transport layer 12 with a film thickness of, for example, 0.3 nm through a mask.
  • a cathode made of magnesium silver (MgAg) is formed as the second electrode 8 with a film thickness of 10 nm, for example.
  • the first protective layer 15 is formed with a thickness of, for example, 1 ⁇ m on the element substrate 30 so as to cover the organic EL element 4 by the above-described chemical vapor deposition method.
  • the vaporization temperature when sublimating the solid dimer of diparaxylylene as a raw material is preferably 40 ° C. to 240 ° C.
  • the vaporization can be performed under a reduced pressure of 1 Torr (133 Pa) or less.
  • the thermal decomposition temperature of the vaporized dimer is preferably 600 ° C. to 680 ° C., and the thermal decomposition can usually be performed under a reduced pressure of 0.5 Torr (67 Pa) or less.
  • the generated diradical paraxylylene adsorbs on the film surface of the substrate and polymerizes with each other to form a high molecular weight polyparaxylylene film.
  • the polymerization reaction temperature is such that the release agent applied to the substrate From the viewpoint of preventing transpiration and decomposition and preventing deformation and damage of the thin film formed on the substrate, it is preferably performed at room temperature, for example, 20 ° C. to 35 ° C. is preferable.
  • the polymerization can usually be carried out under a reduced pressure of 0.1 Torr (13 Pa) or less.
  • Excess diradical paraxylylene can be recovered at a temperature of usually about -70 ° C. by providing a cooling cylinder in the downstream.
  • the second protective layer 16 is formed with a thickness of, for example, 100 nm on the surface of the first protective layer 15 by the atomic layer deposition method (ALD method) described above.
  • this atomic layer deposition method uses water (water vapor), but the first protective layer that covers the organic EL element 4 between the organic EL element 4 and the second protective layer 16 is used. 15 is formed, it is considered that there is no influence on the organic EL element 4 even when the second protective layer 16 is formed by the atomic phase deposition method.
  • an adhesive layer 17 made of, for example, an epoxy resin is formed on the second protective layer 16.
  • an adhesive agent which comprises the contact bonding layer 17 does not specifically limit as an adhesive agent which comprises the contact bonding layer 17.
  • various resin adhesives such as a butyral resin and an acrylic resin other than an epoxy resin, are used, for example. be able to.
  • a differential pressure in a vacuum atmosphere under predetermined conditions (for example, a pressure of 100 Pa or less, a dew point temperature of ⁇ 30 ° C. or less, preferably a dew point temperature of ⁇ 70 ° C. or less).
  • a pressure of 100 Pa or less for example, a pressure of 100 Pa or less, a dew point temperature of ⁇ 30 ° C. or less, preferably a dew point temperature of ⁇ 70 ° C. or less.
  • the ultraviolet ray to be irradiated is preferably 0.5 to 10 J, and more preferably 1 to 6 J.
  • heat treatment 70 ° C. or higher and 120 ° C. or lower, 10 minutes or longer and 2 hours or shorter is performed in the air in order to accelerate the curing of the resin.
  • the organic EL display device 1 shown in FIGS. 1 and 2 is manufactured.
  • the first protective layer 15 made of parylene and covering the surface of the organic EL element 4 is formed on the element substrate 30.
  • the second protective layer 16 made of aluminum oxide is formed on the first protective layer 15. Accordingly, it is possible to reliably prevent the entry of acid or alkali contained in the outgas from the inside of the organic EL display device 1 and the entry of acid or alkali from the outside of the organic EL display device 1 to the organic EL element 4. .
  • the thickness of the second protective layer 16 is set to 10 nm to 10 ⁇ m. Therefore, the acid resistance and alkali resistance of the organic EL element 4 can be reliably ensured without increasing the thickness of the second protective layer 16.
  • the thickness of the first protective layer 15 is set to 500 nm to 5 ⁇ m. Therefore, it becomes possible to ensure the moisture resistance of the organic EL element 4.
  • the second protective layer 16 is formed by an atomic layer deposition method (ALD method). Therefore, the second protective layer 16 can be formed without forming pinholes or cracks.
  • ALD method atomic layer deposition method
  • FIG. 11 is a cross-sectional view of an organic EL display device according to the second embodiment of the present invention.
  • the planar structure of the organic EL display device and the configuration of the organic layer constituting the organic EL element are the same as those in the first embodiment described above, and thus detailed description thereof is omitted here.
  • the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
  • the organic EL display device 40 of the present embodiment is characterized in that the protective layer 18 further includes a third protective layer 19 provided on the surface of the second protective layer 16. is there.
  • the protective layer 18 includes a first protective layer 15 provided so as to cover the organic EL element 4, a second protective layer 16 provided on the surface of the first protective layer 15, It is characterized in that it includes a third protective layer 19 provided on the surface of the second protective layer 16.
  • the third protective layer 19 is made of silicon nitride (SiNx). Then, when the second protective layer 16 is formed by providing the third protective layer 19 formed of silicon nitride on the surface of the second protective layer 16 formed of aluminum oxide, the second protective layer 19 is temporarily provided. Even when pinholes due to sparks or dust are formed in the layer 16, it is possible to prevent the entry of acid or alkali, and as a result, the entry of acid or alkali to the organic EL element 4 is further increased. It becomes possible to prevent.
  • the third protective layer 19 can be formed by a sputtering method or a chemical vapor deposition method (CVD method).
  • the thickness of the third protective layer 19 is 500 nm to 10 ⁇ m. It is preferable.
  • the thickness of the protective layer 18 is 2 ⁇ m to 25 ⁇ m from the viewpoint of further ensuring the acid resistance and alkali resistance of the organic EL element 4 without increasing the thickness of the protective layer 18. It is preferable that
  • the organic EL display device 40 of the present embodiment When manufacturing the organic EL display device 40 of the present embodiment, first, the organic EL element forming step, the first protective layer forming step, and the second protective layer forming step described in the first embodiment are performed. Thereafter, the third protective layer 19 is formed with a thickness of, for example, 1 ⁇ m on the surface of the second protective layer 16 by a known method such as sputtering or chemical vapor deposition (CVD).
  • CVD chemical vapor deposition
  • the organic EL display device 40 shown in FIG. 11 is manufactured by performing the adhesive layer forming step, the bonded body forming step, and the resin curing step described in the first embodiment.
  • the third protective layer 19 made of silicon nitride is formed on the second protective layer 16. Therefore, the entry of acid or alkali to the organic EL element 4 can be more reliably prevented.
  • the thickness of the third protective layer 19 is set to 500 nm to 10 ⁇ m. Therefore, the acid resistance and alkali resistance of the organic EL element 4 can be more reliably ensured without increasing the thickness of the third protective layer 19.
  • the organic layer 7 has a five-layer structure in which the hole injection layer 9, the hole transport layer 10, the light emitting layer 11, the electron transport layer 12, and the electron injection layer 13 are sequentially stacked.
  • a three-layer structure including a hole injection layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer may be used.
  • the laminated structure includes a first electrode 6 that is a cathode from below, an electron injection layer 13, an electron transport layer 12, a light emitting layer 11, a hole transport layer 10, a hole injection layer 9, and a second electrode that is an anode. Electrode 8 is formed. In this case, the materials used for the first electrode 6 and the second electrode 8 are also replaced.
  • the organic EL display device 1 of the present invention employs either a bottom emission structure that emits light from the element substrate 30 side or a top emission structure that emits light from the side opposite to the element substrate 30 side. can do.
  • thermosetting resin material is thermoset in a temperature range of 60 ° C. to 120 ° C.
  • the present invention is suitable for an organic EL display device including an organic EL element and a manufacturing method thereof.

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Abstract

L'invention concerne un dispositif électroluminescent organique (1) qui comprend : un substrat d'élément (30) ; un substrat d'étanchéité (20) qui est installé face au substrat d'élément (30) ; un élément électroluminescent organique (4) qui est formé sur le substrat de l'élément (30) et qui est installé entre le substrat d'élément (30) et le substrat d'étanchéité (20) ; une première couche de protection (15) servant à couvrir la surface de l'élément électroluminescent organique (4), la première couche de protection étant formée sur le substrat d'élément (30) ; tandis qu'une deuxième couche de protection (16) est formée sur la première couche de protection (15). La première couche de protection (15) est composée de parylène, tandis que la deuxième couche de protection (16) est composée d'oxyde d'aluminium.
PCT/JP2011/007323 2011-01-06 2011-12-27 Dispositif électroluminescent organique et son procédé de production WO2012093467A1 (fr)

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WO2009110965A1 (fr) * 2008-02-29 2009-09-11 Eastman Kodak Company Dispositif oled doté d’une couche de faible réduction
JP2010030295A (ja) * 2008-07-04 2010-02-12 Fujifilm Corp バリア性積層体、ガスバリアフィルム、デバイスおよび光学部材

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JP2014056658A (ja) * 2012-09-11 2014-03-27 Denso Corp 有機ｅｌ表示装置およびその製造方法
EP3082172A1 (fr) * 2015-04-16 2016-10-19 Saint-Gobain Glass France Structure stratifiée pour une oled et procédé de production d'une telle structure
WO2016165921A1 (fr) * 2015-04-16 2016-10-20 Saint-Gobain Glass France Structure en couches pour une delo et procédé de production d'une telle structure
CN107431144A (zh) * 2015-04-16 2017-12-01 法国圣戈班玻璃厂 用于oled的分层结构和制造这样的结构的方法
US20180114910A1 (en) * 2015-04-16 2018-04-26 Saint-Gobain Glass France Layered structure for an oled and a method for producing such a structure
US10367142B2 (en) 2015-04-16 2019-07-30 Saint-Gobain Glass France Layered structure for an OLED and a method for producing such a structure

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