WO2012071747A1 - 金属蚀刻终点侦测方法及金属蚀刻终点侦测机 - Google Patents

金属蚀刻终点侦测方法及金属蚀刻终点侦测机 Download PDF

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Publication number
WO2012071747A1
WO2012071747A1 PCT/CN2010/079682 CN2010079682W WO2012071747A1 WO 2012071747 A1 WO2012071747 A1 WO 2012071747A1 CN 2010079682 W CN2010079682 W CN 2010079682W WO 2012071747 A1 WO2012071747 A1 WO 2012071747A1
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Prior art keywords
metal film
metal
end point
etching end
area
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PCT/CN2010/079682
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English (en)
French (fr)
Inventor
王静文
贺成明
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深圳市华星光电技术有限公司
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Publication of WO2012071747A1 publication Critical patent/WO2012071747A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G01N21/5907—Densitometers
    • G01N21/5911—Densitometers of the scanning type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Definitions

  • the invention relates to a metal etching end point detecting method and a metal etching end point detecting machine, in particular to an effect of reducing the position of a scanner for a metal etching end point detecting machine, and more accurately determining a metal.
  • a metal etch end point detection method for a film etch end time and a metal etch end point detector is a metal etching end point detecting machine.
  • FIG. 1 there is shown a schematic view of a conventional metal liquid crystal panel in which a metal wet etching machine 10 for etching metal is transported to a substrate 100 carrying a metal film.
  • a metal wet etching machine 10 for etching metal is transported to a substrate 100 carrying a metal film.
  • the metal wet etching is a substrate 100 plated with a metal film (metal layer) placed in an etching bath filled with an acid solution, and a region where the metal film is not protected by the photoresist is etched to obtain a pattern protected by photoresist.
  • a piece of the metal film is selected from the batch metal film as a template metal film, and the template metal film is obtained for the detection of the etching end point.
  • the etching end point there are two ways to detect the etching end point in the industry. One way is as shown in FIG. 2, and the worker 150 performs sampling inspection, and visually combines the experience to determine the etching end time of the template metal film. However, it is less accurate because it cannot be managed by data.
  • Another way is to pass the endpoint detection machine (EPD, End) Point
  • the scanner 104 of the Detector obtains the etching end time of the template metal film, and the etching end time is defined as starting from the substrate 100 (the substrate 100 is used to carry the metal film) into the etching groove containing the acid solution, and the end point detecting machine scans and It is confirmed that the metal film is light-transmissive, which is much more accurate than the manual visual method.
  • the working principle of the end point detecting machine is to adopt the principle of light reflection/transmission.
  • the light emitted by the scanner 104 of the end point detecting machine is reflected by the metal film because the metal film cannot transmit light.
  • the detecting machine determines that the etching end of the metal film is still not reached.
  • the metal film carried by the substrate 100 is completely etched by the acid solution, the light is transmitted, and the light emitted by the scanner 104 penetrates the substrate 100 without being The reflection, the end point detector determines that the etch end of the metal film has reached.
  • the metal film of the substrate 100 can be divided into a useful region 100a and a useless region 100b in terms of its function, and the useless region 100b refers to a region having no pattern (resistance), since the useful region 100a is performing an exposure process.
  • the pattern is subdivided into many small and irregularly shaped areas. Therefore, when the useful region 100a is etched by the acid solution, the etching time is substantially simply related to the thickness of the metal film; and the unnecessary region 100b has a larger pattern than the useful region 100a because of no pattern, and is etched by the acid solution. Since the outside is internally etched slowly, the same etching thickness is required for the metal layer of the useful region 100a, but the etching time required is long.
  • the etching end time of each metal film can be measured.
  • the existing end point detecting machine is as shown in FIG. 4 and is performed by a single point scanning, the setting position of the scanner 104 directly affects the determination of the etching end point. If the scanner 104 is generally disposed at a fixed position for scanning, but the positions of the useful area 100a and the useless area 100b of the metal film of different substrates are different, if the fixed position of the scanner 104 is scanned to the useless area 100b, the measurement may be caused.
  • the etch end time is longer than the actual desired etch end time, and the error in determining the etch end time will be significantly greater.
  • the main object of the present invention is to provide a metal etching end point detecting method and a metal etching end point detecting machine, which can reduce the influence of the position of the scanner on the metal etching end point detecting machine, and can more accurately determine the etching end point of the metal film. time.
  • the present invention provides a metal etching end point detecting method for use in a metal etching end point detecting machine.
  • the metal etching end point detecting method of the present invention comprises the following steps: using a scanner for a metal film Performing a scan to obtain a ratio of a light transmissive area of the metal film to the scan area in the scan area; determining whether a ratio of a light transmissive area of the metal film to the scan area reaches a predetermined ratio, if it is determined not After the predetermined ratio is reached, the step of scanning the metal film is performed again after a predetermined waiting time; when the predetermined ratio is reached, determining that the current time for the metal film has been etched is The etching end time of the metal film, wherein the length of the scanner is greater than or equal to the width of the substrate carrying the metal film.
  • the end point detecting machine includes a scanner for scanning a metal film, and the scanner is perpendicular to the metal film carrying the length thereof.
  • the conveying direction of the substrate is set such that the scanning area obtained by the scanner spans the width of the substrate.
  • the area of the scanner corresponds to the area of the substrate carrying the metal film.
  • the predetermined ratio is preferably 50% to 75%.
  • the present invention provides a metal etching end point detecting machine, comprising: an obtaining module, a judging module and a determining module.
  • the obtaining module is configured to scan the metal film to obtain a ratio of a light transmissive area of the metal film to the scan area in the scan area; and a determining module is configured to determine a ratio of a light transmissive area of the metal film to the scan area Whether a predetermined ratio is reached; the determining module is configured to determine, when the determining module determines that the ratio of the light transmissive area of the metal film to the scanning area reaches the predetermined ratio, the current etching time of the metal film is the etching end point time.
  • the determining module determines that the ratio of the light transmissive area of the metal film to the scanning area does not reach the predetermined ratio, triggering the acquisition module pair The metal film is scanned.
  • the acquisition module comprises: a scanner and a ratio acquisition unit.
  • a scanner is configured to scan the metal film to obtain a light transmissive area of the metal film;
  • a ratio acquisition unit is configured to acquire the light transmissive area of the metal film in the scan area. proportion.
  • the length of the scanner is greater than or equal to the width of the substrate carrying the metal film, so that the scanning area obtained by the scanner spans the The width of the substrate.
  • the predetermined ratio is preferably 50% to 75%.
  • the metal etching end point detecting method and the metal etching end point detecting machine according to the present invention can reduce the influence of the position of the scanner of the end point detecting machine, and can more accurately determine the etching end time required for the metal film, thereby improving the liquid crystal. Panel manufacturing yield.
  • FIG. 1 is a schematic view showing a substrate in which a metal film is carried by a metal wet etching machine which etches a metal in a conventionally produced liquid crystal panel.
  • Fig. 2 is a schematic view showing the prior art worker performing a sampling test to visually determine the etching end time of the metal film.
  • FIG. 3 is a schematic view showing a metal film carried by a substrate of a liquid crystal panel, having a useful region and a useless region.
  • Fig. 4 is a view showing the determination of the etching end time of the metal film by the metal etching end point detector of the prior art.
  • Figure 5 is a block diagram showing the structure of a metal etching end point detector of the present invention.
  • Fig. 6 is a view for explaining the determination of the etching end time of the metal film by the metal etching end point detector of the present invention.
  • Figure 7 is a flow chart illustrating the metal etching end point detecting method of the present invention.
  • FIG. 3 is a block diagram showing the structure of a metal etching end point detector of the present invention.
  • Fig. 6 is a view showing the determination of the etching end time of the metal film by the metal etching end point detector of the present invention.
  • Figure 7 is a flow chart illustrating the metal etching end point detecting method of the present invention.
  • the endpoint detector of the present invention includes an acquisition module 20, a determination module 30, and a determination module 40.
  • the obtaining module 20 is configured to scan the metal film to obtain a ratio of the light-transmissive area of the metal film to the scanning area in the scanning area; the determining module 30 is configured to determine that the light-transmissive area of the metal film accounts for Whether the ratio of the scanning area reaches a predetermined ratio; and the determining module 40 is configured to determine that the current metal film has been etched when the determining module 30 determines that the ratio of the light transmissive area of the metal film to the scanning area reaches the predetermined ratio
  • the time is the etching end time.
  • the endpoint detection controller 202 is a specific embodiment of the determination module 30 and the determination module 40, but is not limited thereto.
  • the obtaining module 20 may include the scanner 204 and the scale acquiring unit 204-1 shown in FIG. 5 as specific embodiments, but is not limited thereto.
  • the scanner 204 is used to scan a metal film to obtain a light transmissive area of the metal film.
  • the ratio acquisition unit 204-1 is configured to obtain a ratio of a light transmissive area of the metal film to the scan area in the scan area, and the scanner 204 may be an optical scanner as a specific embodiment, and may be determined by the material of the metal film. The applicable spectral range and specifications.
  • the ratio acquisition unit 204-1 may be an ASIC special application IC circuit as a specific embodiment; or integrated with the scanner 204, the determination module 30, and the determination module 40 as an independent detection device; or the ratio acquisition unit 204- 1.
  • the determination module 30 and the determination module 40 are implemented by a hardware circuit architecture, or the individual functions of the operation software may be implemented, but are not limited thereto.
  • the scanner 204 of the acquisition module 20 included in the metal etching endpoint detector of the present invention may also be a separate detecting device, and the ratio acquiring unit 204-1, the determining module 30 and the determining module 40 may also be wet-etched by metal.
  • the internal control mechanism of the machine is realized.
  • the acquisition module 20, the determination module 30, and the determination module 40 included in the endpoint detector of the present invention may be specifically implemented by a control mechanism inside the metal wet etching machine.
  • the scanner 204 can be disposed in a metal wet etch machine for scanning the metal film carried by the etched substrates 100-1, 100-2.
  • the principle is briefly described as follows: The scanner 204 emits light to the metal film on the substrates 100-1, 100-2 to scan the metal film.
  • the scanner 204 further has a receiver (not shown) for sensing whether the emitted light is reflected by the metal film on the substrate 100-1, 100-2, and converting the reflection value obtained by the receiver into a DAC.
  • a plurality of signals are acquired by the ratio acquisition unit 204-1.
  • the endpoint detection controller 202 receives the plurality of signals from the scale acquisition unit 204-1. And by determining and determining whether the ratio of the light transmissive area of the metal film to the scanning area in the area scanned by the scanner 204 reaches a predetermined ratio.
  • the end point detection controller 202 of the present embodiment can calculate in real time whether the ratio of the light transmissive area of the metal film on the substrate 100-1, 100-2 to the scanning area reaches a predetermined ratio.
  • the time at which the current metal film has been etched can be determined, that is, the time period from the time when the substrate having the metal film is placed in the metal wet etching machine to the time point is the etching end time.
  • the predetermined ratio is preferably 50% to 75%.
  • the scanner 204 may be an elongated strip having a longitudinal direction perpendicular to the transport direction of the substrate carrying the metal film, that is, horizontally perpendicular to The substrates 100-1, 100-2 are transported in a metal wet etching machine.
  • the length of the scanner 204 can be greater than or equal to the width of the substrate, so that the scanning area obtained by the scanner 204 spans the width of the substrates 100-1, 100-2, and the substrate 100-1 can be comprehensively scanned.
  • the thickness of the metal film on 100-2 Therefore, both the useful area 100a and the useless area 100b in FIG. 3 can be covered by the area scanned by the scanner 204.
  • the scanning area of the scanner 204 can be the entire area of the metal film, and the etching state of the entire metal film area can be actually scanned and confirmed in real time.
  • the scanning area of the scanner 204 covers the useful area 100a and the useless area 100b in the metal film area.
  • the length of the scanner 204 is preferably greater than 1950 mm; if the panel process of the 8.5 generation is used, the size of the substrate to be cut is 2500 mm ⁇ 2200 mm, Therefore, the length of the scanner 204 is preferably greater than 2200 mm.
  • the scanner 204 may have an area equivalent to the entire substrate, and is directly disposed directly above the substrate, but not limited to these forms, and can only be actually scanned. The etching state of the entire metal film region can be confirmed in real time.
  • the metal etching method of the present invention can be applied to the end point detecting machine of the end point detecting controller 202 and the scanner 204 in Fig. 6, so as to accurately determine the etching end time of each metal film.
  • the metal etching method comprises the following steps:
  • Step S701 scanning the metal film to obtain a ratio of a light transmissive area of the metal film to the scan area in the scan area;
  • Step S702 determining whether the ratio of the light-transmissive area of the metal film to the scanning area reaches a predetermined ratio. If the light-transmitting area does not reach the predetermined ratio, returning to the previous step S701, repeating execution after a preset waiting time Step of scanning the metal film, if it is determined that the light transmission area reaches a predetermined ratio, proceeding to the next step S703;
  • Step S703 determining that the current time that the metal film has been etched is the etching end time.
  • the present invention can reduce the influence of the position of the scanner on the metal etching end point detector as described above, and can more accurately determine the etching end time of the metal film, thereby further improving the manufacturing yield of the liquid crystal panel.

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Description

金属蚀刻终点侦测方法及金属蚀刻终点侦测机 技术领域
本发明是有关于一种金属蚀刻终点侦测方法及金属蚀刻终点侦测机，特别是有关于一种能减少金属蚀刻终点侦测机的扫描仪摆设位置的影响，并且能更精确地确定金属膜的蚀刻终点时间的金属蚀刻终点侦测方法及金属蚀刻终点侦测机。
背景技术
请参考图1，显示现有制作液晶面板，对金属进行蚀刻的金属湿式蚀刻机10传送承载金属膜的基板100的示意图。制作液晶面板时，会有金属湿式蚀刻机10对金属进行蚀刻的金属湿式蚀刻工序。金属湿式蚀刻是表面镀有金属膜（金属层）的基板100置于盛满酸液的蚀刻槽内，对金属膜未被光阻保护的区域进行蚀刻，以得到为光阻保护的图案。在金属湿式蚀刻机10对批量的金属膜进行蚀刻之前，先从批量的金属膜中选取一块作为样板金属膜，并获取样板金属膜进行蚀刻终点的侦测。目前业界现存有两种方式来进行蚀刻终点的侦测，一种方式是如图2所示，由工作人员150实施抽检，以目视方式结合经验进行判定而获取样板金属膜的蚀刻终点时间，但由于无法数据化管理，因此较为不精确。另一种方式是会先通过终点侦测机（EPD，End Point Detector）的扫描仪104获取样板金属膜的蚀刻终点时间，蚀刻终点时间的定义为从基板100（基板100用于承载金属膜）进入盛有酸液的蚀刻槽开始，到终点侦测机扫描并确认金属膜透光为止，相较于人工目视方式，较为精确许多。
终点侦测机的工作原理为采用光反射/透射原理，当基板100有金属膜时，因金属膜无法透光，终点侦测机的扫描仪104所发射出的光线会被金属膜反射，终点侦测机据此判定仍未达金属膜的蚀刻终点；而当基板100所承载的金属膜被酸液蚀刻完全时则会透光，扫描仪104射出的光线会穿透基板100而不会被反射，终点侦测机据此判定已达金属膜的蚀刻终点。
然而如图3所示，基板100的金属膜就其功能而言，可分有用区域100a和无用区域100b，无用区域100b就是指没有图案（光阻）的区域，由于有用区域100a在进行曝光工艺时图案即被细分成许许多多细小且形状不规则的区域。因此，有用区域100a被酸液蚀刻时，蚀刻时间基本上仅单纯地与金属膜的厚度相关；而无用区域100b因没有图案，整体面积相对有用区域100a较大，被酸液蚀刻时，会从外部到内部较慢地蚀刻，因此虽与有用区域100a的金属层具有同样的膜厚，但其所需的蚀刻时间较长。
虽然采用终点侦测机的方式，能够测得每块金属膜的蚀刻终点时间。然而，因现有终点侦测机均如图4所示，是采用单点扫描的方式进行，故扫描仪104的设置位置会直接影响蚀刻终点的确定。如扫描仪104一般是设置于一固定位置进行扫描，但不同基板的金属膜的有用区域100a、无用区域100b的位置不同，若扫描仪104的固定位置多扫描到无用区域100b，会导致测得的蚀刻终点时间比真正所需的蚀刻终点时间长，则造成蚀刻终点时间确定的误差将明显较大。
因此，有必要提供一种金属蚀刻终点侦测方法及金属蚀刻终点侦测机，以解决前述现有技术中所存在的问题。
 技术问题
本发明的主要目的在于提供一种金属蚀刻终点侦测方法及金属蚀刻终点侦测机，能减少金属蚀刻终点侦测机的扫描仪摆设位置的影响，并且能更精确地确定金属膜的蚀刻终点时间。
 技术解决方案
为达成本发明的前述目的，本发明提供一种金属蚀刻终点侦测方法，应用于一金属蚀刻终点侦测机，本发明的金属蚀刻终点侦测方法包含下述步骤：使用扫描仪对金属膜进行扫描，以获取扫描区域中，所述金属膜的透光面积占所述扫描区域的比例；判断所述金属膜的透光面积占所述扫描区域的比例是否达到一预定比例,若判定未达到所述预定比例，则在预设的一等待时间后，再次执行所述对金属膜进行扫描的步骤；当达到所述预定比例时，确定当前对所述金属膜已蚀刻的时间为所述金属膜的蚀刻终点时间，其中所述扫描仪的长度大于或等于承载所述金属膜的基板的宽度。
本发明的金属蚀刻终点侦测方法的一实施例中，所述终点侦测机包括一用于对金属膜进行扫描的扫描仪，且所述扫描仪以其长度方向垂直于承载所述金属膜的基板的传送方向设置，以使所述扫描仪获得的所述扫描区域横跨所述基板的宽度。
本发明的金属蚀刻终点侦测方法的一实施例中，所述扫描仪的面积相当于承载所述金属膜的基板的面积。
本发明的金属蚀刻终点侦测方法的一实施例中，所述预定比例优选为50%~75%。
为达成本发明的前述目的，本发明提供一种金属蚀刻终点侦测机，包含：获取模块、判断模块及确定模块。获取模块用于对金属膜进行扫描，以获取扫描区域中，所述金属膜的透光面积占所述扫描区域的比例；判断模块用于判断金属膜的透光面积占所述扫描区域的比例是否达到一预定比例；确定模块用于在所述判断模块判定所述金属膜的透光面积占所述扫描区域的比例达到所述预定比例时，确定当前对金属膜已蚀刻的时间为蚀刻终点时间。
本发明的金属蚀刻终点侦测机的一实施例中，若所述判断模块判定所述金属膜的透光面积占所述扫描区域的比例未达到所述预定比例，则触发所述获取模块对所述金属膜进行扫描。
本发明的金属蚀刻终点侦测机的一实施例中，所述获取模块包括：扫描仪及比例获取单元。扫描仪用于对所述金属膜进行扫描，以获得所述金属膜的透光面积；比例获取单元用于获取所述扫描区域中，所述金属膜的所述透光面积占所述扫描区域的比例。
本发明的金属蚀刻终点侦测机的一实施例中，所述扫描仪的长度大于或等于承载所述金属膜的基板的宽度，以使所述扫描仪获得的所述扫描区域横跨所述基板的宽度。
本发明的金属蚀刻终点侦测机的一实施例中，所述预定比例优选为50%~75%。
 有益效果
依据本发明的金属蚀刻终点侦测方法及金属蚀刻终点侦测机，能减少终点侦测机的扫描仪摆设位置的影响，并且能更精确地确定金属膜所需的蚀刻终点时间，进而提升液晶面板制造良率。
 附图说明
图1是显示现有制作液晶面板，对金属进行蚀刻的金属湿式蚀刻机传送承载金属膜的基板的示意图。
图2是显示现有技术工作人员实施抽检，以目视方式进行金属膜的蚀刻终点时间判定的示意图。
图3是说明液晶面板的基板所承载的金属膜，具有分有用区域和无用区域的示意图。
图4是说明以现有技术的金属蚀刻终点侦测机进行金属膜的蚀刻终点时间判定的示意图。
图5是说明本发明金属蚀刻终点侦测机的结构方块图。
图6是说明利用本发明的金属蚀刻终点侦测机进行金属膜的蚀刻终点时间判定的示意图。
图7是说明本发明金属蚀刻终点侦测方法的流程图。
 本发明的最佳实施方式
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下：
请参考图3、图5、图6与图7。图5是说明本发明金属蚀刻终点侦测机的结构方块图。图6是说明本发明金属蚀刻终点侦测机进行金属膜的蚀刻终点时间确定的示意图。图7是说明本发明金属蚀刻终点侦测方法的流程图。如图5所示，本发明的终点侦测机包含获取模块20、判断模块30及确定模块40。获取模块20用于对金属膜进行扫描，以获取扫描区域中，所述金属膜的透光面积占所述扫描区域的比例；判断模块30用于判断所述金属膜的透光面积占所述扫描区域的比例是否达到一预定比例；以及确定模块40用于在判断模块30判定所述金属膜的透光面积占所述扫描区域的比例达到所述预定比例时，确定当前对金属膜已蚀刻的时间为蚀刻终点时间。
如图6所示，在本发明的此实施例中，终点侦测控制器202为判断模块30及确定模块40的具体实施例，但并非以此为限定。获取模块20则可包含扫描仪204及图5中所示的比例获取单元204-1为具体之实施例，但并非以此为限定。
在本发明的此实施例中，扫描仪204用于对金属膜进行扫描，以获得金属膜的透光面积。比例获取单元204-1用于获取扫描区域中，金属膜的透光面积占扫描区域的比例，扫描仪204可为光学式扫描仪为具体之实施例，且可视金属膜的材料而决定其所适用的光谱范围及规格。比例获取单元204-1，则可为一ASIC特殊应用的IC电路为具体之实施例；或者与扫描仪204、判断模块30及确定模块40整合为一独立的检测装置；或者比例获取单元204-1、判断模块30及确定模块40的部分以硬体电路架构实现，或者以作业软件的程式来实现个别的功能亦可，但亦非以此为限定。
再者，本发明的金属蚀刻终点侦测机包含的获取模块20的扫描仪204亦可以为一单独之检测装置，而比例获取单元204-1、判断模块30及确定模块40亦可由金属湿式蚀刻机内部的控制机制具体实现。或者，本发明的终点侦测机包含的获取模块20、判断模块30及确定模块40，皆可由金属湿式蚀刻机内部的控制机制具体实现。
在本发明此实施例中，扫描仪204可以设置在金属湿式蚀刻机内，用以对蚀刻的基板100-1、100-2所承载的金属膜进行扫描。其原理简述如下：扫描仪204射出光线至基板100-1、100-2上的金属膜，对金属膜进行扫描。并且，扫描仪204更具有一接受器（未显示），感测射出光线是否为基板100-1、100-2上的金属膜反射，并将所述接受器获取的反射数值透过DAC转换为多个讯号而为比例获取单元204-1所获取。
接着，终点侦测控制器202接收来自比例获取单元204-1的多个讯号。并藉以判断及确定扫描仪204扫描的区域中，金属膜的透光面积占扫描区域的比例是否达到一预定比例。本实施例的终点侦测控制器202可实时地运算基板100-1、100-2上的金属膜的透光面积占扫描区域的比例是否达到预定比例。当达到所述预定比例时，即可确定当前对金属膜已蚀刻的时间，即自将具有金属膜的基板置入金属湿式蚀刻机起至该时间点的时间区段为蚀刻终点时间。且经由本发明者的实验结果，此预定比例优选为50%~75%。
并且，如图6所示，在本发明此实施例中，扫描仪204可为一长条形，以其长度方向垂直于承载所述金属膜的基板的传送方向设置，亦即横设垂直于基板100-1、100-2在金属湿式蚀刻机内传送方向。并且，扫描仪204的长度可大于或等于所述基板的宽度，以使扫描仪204获得的扫描区域横跨基板100-1、100-2的宽度，而能全面性地扫描基板100-1、100-2上金属膜的厚度。因此，无论图3当中的有用区域100a和无用区域100b都能被扫描仪204所扫描的区域所覆盖。换言之，扫描仪204扫描区域可以为金属膜的整个面积，而能实际扫描并实时确认整个金属膜区域的蚀刻状态。扫描仪204的扫描区域即涵盖金属膜区域中的有用区域100a和无用区域100b。在进行蚀刻终点时间的判定时， 既不会如现有技术因感测器104的扫描区域若多落在无用区域100b，造成蚀刻终点时间的判定发生明显、较大误差的缺点。
在本发明的实施例中，若以7.5代厂的面板工艺而言，所切割的基板大小为2250mm×1950mm, 因此，扫描仪204的长度以大于1950mm为优选；若以8.5代厂的面板工艺而言，所切割的基板大小为2500mm×2200mm, 因此，扫描仪204的长度以大于2200mm为优选。并且，若金属湿式蚀刻机内的空间足够且允许的情况下，扫描仪204亦可为面积相当于整个基板，而直接设置在基板正上方，但并非以此些形式为限，仅能实际扫描并实时确认整个金属膜区域的蚀刻状态即可。
请继续参考图6与图7。本发明的金属蚀刻方法可应用于图6中，具有终点侦测控制器202及扫描仪204的终点侦测机，以能精确判定每一金属膜的蚀刻终点时间。
在本发明此实施例中，金属蚀刻方法包含下列步骤：
步骤S701：对金属膜进行扫描，以获取扫描区域中，金属膜的透光面积占扫描区域的比例；
步骤S702：判断金属膜的透光面积占扫描区域的比例是否达到预定比例，若透光面积未达到所述预定比例，则回至前一步骤S701，在一预设的等待时间后，重复执行对所述金属膜进行扫描的步骤，若判定透光面积达到预定比例时，则进行下一步骤S703；以及
步骤S703：确定当前对所述金属膜已蚀刻的时间为蚀刻终点时间。
总言之，如前所述本发明能减少金属蚀刻终点侦测机的扫描仪摆设位置的影响，并且能更精确地确定金属膜的蚀刻终点时间，更进一步提升液晶面板制造良率。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
 本发明的实施方式
工业实用性
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Claims (18)

  1. 一种金属蚀刻终点侦测方法，应用于具有一扫描仪的一金属蚀刻终点侦测机，其特征在于：包含：
    使用扫描仪对金属膜进行扫描，以获取扫描区域中，所述金属膜的透光面积占所述扫描区域的比例；
    判断所述金属膜的透光面积占所述扫描区域的比例是否达到一预定比例,若判定未达到所述预定比例，则在预设的一等待时间后，再次执行所述对金属膜进行扫描的步骤；
    当达到所述预定比例时，确定当前对所述金属膜已蚀刻的时间为所述金属膜的蚀刻终点时间，
    其中所述扫描仪的长度大于或等于承载所述金属膜的基板的宽度。
  2. 如权利要求1所述的金属蚀刻终点侦测方法，其特征在于：所述扫描仪以其长度方向垂直于承载所述金属膜的基板的传送方向设置，以使所述扫描仪获得的所述扫描区域横跨所述基板的宽度。
  3. 如权利要求1所述的金属蚀刻终点侦测方法，其特征在于：所述扫描仪的面积相当于承载所述金属膜的基板的面积。
  4. 如权利要求1所述的金属蚀刻终点侦测方法，其特征在于：所述预定比例为50%~75%。
  5. 一种金属蚀刻终点侦测方法，应用于一金属蚀刻终点侦测机，其特征在于：包含：
    对金属膜进行扫描，以获取扫描区域中，所述金属膜的透光面积占所述扫描区域的比例；
    判断所述金属膜的透光面积占所述扫描区域的比例是否达到一预定比例；
    当达到所述预定比例时，确定当前对所述金属膜已蚀刻的时间为所述金属膜的蚀刻终点时间。
  6. 如权利要求5所述的金属蚀刻终点侦测方法，其特征在于：在判断所述金属膜的透光面积占所述扫描区域的比例是否达到所述预定比例的步骤中，若判定未达到所述预定比例，则重复执行所述对金属膜进行扫描的步骤。
  7. 如权利要求5所述的金属蚀刻终点侦测方法，其特征在于：所述金属蚀刻终点侦测机包括一用于对金属膜进行扫描的扫描仪，且所述扫描仪以其长度方向垂直于承载所述金属膜的基板的传送方向设置。
  8. 如权利要求5所述的金属蚀刻终点侦测方法，其特征在于：所述金属蚀刻终点侦测机包括一用于对金属膜进行扫描的扫描仪，且所述扫描仪的长度大于或等于承载所述金属膜的基板的宽度，以使所述扫描仪获得的所述扫描区域横跨所述基板的宽度。
  9. 如权利要求5所述的金属蚀刻终点侦测方法，其特征在于：所述金属蚀刻终点侦测机包括一用于对金属膜进行扫描的扫描仪，且所述扫描仪的面积相当于承载所述金属膜的基板的面积。
  10. 如权利要求5所述的金属蚀刻终点侦测方法，其特征在于：所述预定比例为50%~75%。
  11. 一种金属蚀刻终点侦测机，其特征在于：包含：
    获取模块，用于对金属膜进行扫描，以获取扫描区域中，所述金属膜的透光面积占所述扫描区域的比例；
    判断模块，用于判断所述金属膜的透光面积占所述扫描区域的比例是否达到一预定比例；
    确定模块，用于在所述判断模块判定所述金属膜的透光面积占所述扫描区域的比例达到所述预定比例时，确定当前对金属膜已蚀刻的时间为该金属膜的蚀刻终点时间。
  12. 如权利要求11所述的金属蚀刻终点侦测机，其特征在于：若所述判断模块判定所述金属膜的透光面积占所述扫描区域的比例未达到所述预定比例，则触发所述获取模块对所述金属膜进行扫描。
  13. 如权利要求11所述的金属蚀刻终点侦测机，其特征在于：所述获取模块包括：
    扫描仪，用于对所述金属膜进行扫描，以获得所述金属膜的透光面积；
    比例获取单元，用于获取所述扫描区域中，所述金属膜的所述透光面积占所述扫描区域的比例。
  14. 如权利要求13所述的金属蚀刻终点侦测机，其特征在于：所述扫描仪的长度大于或等于承载所述金属膜的基板的宽度，以使所述扫描仪获得的所述扫描区域横跨承载所述金属膜的基板的宽度。
  15. 如权利要求13所述的金属蚀刻终点侦测机，其特征在于：所述扫描仪以其长度方向垂直于承载所述金属膜的基板的传送方向设置。
  16. 如权利要求13所述的金属蚀刻终点侦测机，其特征在于：所述扫描仪的面积相当于承载所述金属膜的基板的面积。
  17. 如权利要求16所述的金属蚀刻终点侦测机，其特征在于：所述扫描仪设置在所述基板的位置的上方。
  18. 如权利要求11所述的金属蚀刻终点侦测机，其特征在于：所述预定比例为50%~75%。
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