WO2012047069A2 - Élément électroluminescent et son procédé de fabrication - Google Patents

Élément électroluminescent et son procédé de fabrication Download PDF

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WO2012047069A2
WO2012047069A2 PCT/KR2011/007461 KR2011007461W WO2012047069A2 WO 2012047069 A2 WO2012047069 A2 WO 2012047069A2 KR 2011007461 W KR2011007461 W KR 2011007461W WO 2012047069 A2 WO2012047069 A2 WO 2012047069A2
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layer
light emitting
type semiconductor
emitting device
carbon
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PCT/KR2011/007461
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English (en)
Korean (ko)
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WO2012047069A3 (fr
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이규철
정건욱
이철호
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서울대학교산학협력단
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Priority to US13/877,951 priority Critical patent/US9166101B2/en
Publication of WO2012047069A2 publication Critical patent/WO2012047069A2/fr
Publication of WO2012047069A3 publication Critical patent/WO2012047069A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Definitions

  • the present invention relates to a light emitting device and a method of manufacturing the same.
  • a light emitting device is a light emitting diode (LED).
  • a light emitting diode is a device that emits light through a combination of electrons and holes near a p-n junction or in an active layer by flowing a current through a compound semiconductor terminal.
  • MOCVD organometallic chemical vapor deposition
  • the conventional light emitting diode was mainly manufactured by depositing a compound on a sapphire substrate.
  • the sapphire substrate has good light transmittance and mechanical strength, there are disadvantages such as low heat transfer rate and difficulty in processing.
  • a laser lift-off process is required to manufacture a vertical light emitting diode.
  • Graphene may be considered as one of the alternative candidate materials that can overcome the disadvantages of the sapphire substrate.
  • Graphene refers to a layer in which carbon atoms are connected to each other to have a honeycomb two-dimensional planar structure.
  • the experimental method of obtaining graphene was first known in 2004 by Ander K. Geim of Manchester University, which separated the graphene from graphite mechanically, and since then, research into the physical and chemical properties of graphene has continued. Recently, a technique for growing graphene on a large substrate up to 30 inches by using chemical vapor deposition (CVD) has emerged.
  • Graphite, ie, graphite has two or more layered structures. In other words, if only one layer of graphite is separated, it becomes graphene.
  • Graphene has excellent thermal and electrical conductivity, good chemical / mechanical stability, and transparency.
  • graphene has a high electron mobility, low resistivity, wide surface area, and commercially advantageous than carbon nanotubes (carbon nanotube).
  • graphene or graphite of a layered structure comprising graphene can be easily separated from the original substrate and transferred to another substrate.
  • the present invention is derived under the background art, and an object thereof is to provide a light emitting device using graphene and a method of manufacturing the same.
  • the problem to be solved by the present application is not limited to the problem described above, another problem that is not described will be clearly understood by those skilled in the art from the following description.
  • a carbon layer comprising graphene; A plurality of microstructures grown upward from the carbon layer; A thin film layer covering the microstructure; And it provides a light emitting device comprising a light emitting structure layer formed on the thin film layer.
  • a carbon layer comprising a graphene; Growing a plurality of microstructures upwardly on the carbon layer; Forming a thin film layer covering the microstructure; And providing a light emitting structure layer on the thin film layer.
  • the present invention provides a light emitting device using graphene and a method of manufacturing the same. Specifically, according to the present invention, after forming a microstructure above the graphene and forming a thin film layer covering the microstructure, a light emitting structure layer is formed on the thin film layer. It is possible to separate the light emitting elements and to transfer them on various substrates.
  • the microstructure has excellent crystallinity, the electrical and optical properties are excellent, and a high-efficiency light emitting device can be manufactured using a high quality thin film formed on the microstructure.
  • graphene has excellent electrical conductivity, and thus graphene or graphite may be used as the lower electrode.
  • the graphene is excellent in thermal conductivity can prevent the performance degradation of the light emitting device due to heat.
  • Figure 1a is a cross-sectional view of a light emitting device according to an embodiment of the present invention
  • Figure 1b is a schematic diagram schematically showing a graphene
  • Figure 1c is an enlarged cross-sectional view showing a quantum active layer.
  • FIGS 2 to 6 are cross-sectional views of light emitting devices according to another embodiment of the present invention.
  • 7A to 7E are perspective views showing various shapes of the microstructures.
  • 8A and 8B are schematic diagrams illustrating a transfer process of graphene.
  • 9A to 9G are cross-sectional views sequentially illustrating steps of manufacturing a light emitting device according to an embodiment of the present invention.
  • 10A is an optical microscope photograph of graphene subjected to oxygen plasma treatment.
  • 10B is a scanning electron microscope (SEM) photograph showing the zinc oxide microstructures grown on graphene.
  • 10C is a scanning electron micrograph showing a gallium nitride thin film layer covering a zinc oxide microstructure.
  • FIG. 11 is a graph showing measurement results of room temperature photoluminescence spectra of a zinc oxide thin film layer in a light emitting device according to an embodiment of the present invention.
  • FIG. 12 is a graph illustrating measurement results of electroluminescence spectra at various applied voltages in the light emitting device according to the embodiment of the present invention.
  • FIG. 13 is a graph showing a measurement result of a current-voltage characteristic curve in a light emitting device according to an embodiment of the present invention.
  • Figure 1a is a cross-sectional view of a light emitting device according to an embodiment of the present invention
  • Figure 1b is a schematic diagram schematically showing a graphene
  • Figure 1c is an enlarged cross-sectional view showing a quantum active layer.
  • the light emitting device 1 includes a substrate 10, a carbon layer 20, a microstructure 30, a thin film layer 42, a light emitting structure layer 40, and a first electrode 50. do.
  • the substrate 10 may be any material such as metal, glass, resin, or the like.
  • silicon, silicon carbide, gallium arsenide, spinel, indium phosphide, gallium phosphide, aluminum phosphide, gallium nitride, indium nitride, aluminum nitride, zinc oxide, magnesium oxide, aluminum oxide, titanium oxide , Sapphire, quartz, pyrex may be used, but is not limited to these materials.
  • the carbon layer 20 is located on the substrate 10. However, when the carbon layer 20 has sufficient mechanical strength, the substrate 10 is not necessarily required. In this case, the carbon layer 20 itself may serve as a substrate without having a separate substrate 10. .
  • the carbon layer 20 may be detachable from the substrate 10.
  • the carbon layer 20 and the upper structure may be separated from the substrate 10 and transferred. Details thereof will be described later.
  • the carbon layer 20 includes one or more layers of graphene.
  • Graphene is a two-dimensional planar material in which carbon atoms are connected to each other to form a honeycomb, as shown in FIG. 1B.
  • Graphene may have a variety of structures, such a structure may vary depending on the content of 5-membered and / or 7-membered rings that can be included in the graphene.
  • the microstructure 30 is provided in plurality at any point on the carbon layer 20.
  • the microstructure 30 is a structure of approximately micro or nano scale, and is not particularly limited in size or shape.
  • the microstructure 30 is formed by growing upward from the carbon layer 20. This does not necessarily mean that the microstructure 30 is formed perpendicular to the carbon layer 20, but rather the portion where the microstructure 30 is in contact with the carbon layer 20 is formed on the plate surface of the carbon layer 20. It means that it is formed by a bottom-up method with respect to.
  • the microstructure 30 manufactured by the stacking method can grow to excellent crystallites having a very low dislocation density despite a difference in material constants (lattice constant or thermal expansion coefficient) from the carbon layer 20. Therefore, it has better crystallinity and electrical and optical properties than the structure manufactured by the top-down method based on the thin film deposition and etching process. Therefore, the thin film layer 42 formed on the microstructure 30 is also excellent in electrical and optical properties, it is possible to manufacture the light emitting device 1 of high efficiency.
  • the fine structure 30 may be grown upward from damage formed on the carbon layer 20, and details thereof will be described later.
  • the material of the microstructure 30 is not particularly limited, and for example, zinc oxide, magnesium oxide, zinc cadmium oxide, zinc magnesium cadmium, zinc beryllium oxide, magnesium beryllium oxide, zinc manganese oxide, zinc magnesium manganese oxide, gallium nitride , Aluminum aluminide, gallium aluminum nitride, or indium gallium nitride.
  • the shape of the microstructure 30 is not particularly limited, and for example, the cylindrical fine rod 30a as shown in FIG. 7A, the fine rod 30b as the polygonal column as shown in FIG. 7B, and FIG. 7C. It may be a fine needle 30c as shown, a fine tube 30d as shown in FIG. 7D, and a fine wall 30e as shown in FIG. 7E.
  • the thin film layer 42 is formed to cover the microstructure 30. That is, the microstructure 30 and the thin film layer 42 are provided so that the microstructure 30 may be drawn in the thin film layer 42.
  • the microstructure 30 serves as a kind of seed layer for forming the thin film layer 42. That is, it is very difficult to stack a thin film on graphene or graphite, but it is easy to form the microstructure 30 on the graphene or graphite, and form the thin film layer 42 using the microstructure 30 as a seed. Do.
  • the material of the thin film layer 42 may be nitride such as gallium nitride, oxide such as zinc oxide, or the like, but is not particularly limited thereto.
  • the thin film layer 42 is preferably made of a material similar to the microstructure 30 in the crystal structure and lattice constant for matching with the microstructure 30.
  • the thin film layer 42 may be formed as a structural layer for emitting light, for example, an n-type semiconductor layer.
  • the n-type semiconductor layer is made of a semiconductor material doped with n-type impurities.
  • Silicon, germanium, selenium, tellurium, or carbon may be used as the n-type impurity, and gallium nitride, aluminum nitride, gallium aluminum nitride, or indium gallium nitride may be used as the semiconductor material, but is not limited thereto. .
  • the light emitting structure layer 40 may be positioned above the thin film layer 42.
  • the light emitting structure layer 40 is formed in a multilayer thin film structure, and may include, for example, a quantum active layer 44 and a p-type semiconductor layer 46.
  • the thin film layer 42 is formed of an n-type semiconductor layer
  • the thin film layer 42, the quantum active layer 44, and the p-type semiconductor layer 46 are collectively referred to as light emitting structure layers, or they are referred to as semiconductor layers or light emission. It is also possible to call it a heterojunction.
  • the quantum active layer 44 is formed on the surface of the thin film layer 42 and emits light by the applied voltage.
  • the quantum active layer 44 may be configured by alternately stacking a plurality of quantum barrier layers 442 and a plurality of quantum well layers 444 (see FIG. 1C), and emit light by recombination of electrons and holes.
  • the quantum barrier layer 442 includes gallium nitride, indium gallium nitride, aluminum nitride, gallium aluminum nitride, zinc oxide, zinc oxide, zinc cadmium oxide, zinc magnesium cadmium, zinc beryllium, zinc magnesium beryllium, zinc manganese oxide, Or zinc magnesium magnesium manganese, but is not limited to these materials.
  • the quantum well layer 444 includes gallium nitride, indium gallium nitride, aluminum nitride, gallium nitride, zinc oxide, zinc oxide, zinc cadmium oxide, zinc magnesium cadmium, zinc beryllium, zinc magnesium beryllium, and zinc oxide. It may be made of manganese, or zinc magnesium manganese oxide, but is not limited to these materials.
  • the p-type semiconductor layer 46 is formed on the surface of the quantum active layer 44 and is made of a semiconductor material doped with p-type impurities. Mg, zinc, or beryllium may be used as the p-type impurity, and gallium nitride, aluminum nitride, gallium aluminum nitride, or indium gallium nitride may be used as the semiconductor material, but is not limited thereto.
  • the first electrode layer 50 is formed on the light emitting structure layer 40.
  • the first electrode layer 50 may be formed of a conductive material, such as metals such as Au, Ni, Ti, and Cr, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and indium zinc tin (IZTO). transparent conductive oxides (TCO), conductive polymers, graphene, and the like, may be used.
  • the light emitting device 1 may emit light by connecting the first electrode layer 50 and the carbon layer 20 or the second electrode layer 70 described later to an external power source through a lead or the like.
  • the physical / chemical properties of the light emitting device are remarkably improved by using the carbon layer 20 including graphene. This is because of the following properties of graphene.
  • the carbon layer 20 including graphene itself may be used as an electrode, and even if a separate electrode is provided in the carbon layer 20, the contact resistance is small.
  • the carbon layer 20 itself is used as an electrode, the structure is simpler than in the case where a separate electrode is provided, thereby saving process cost and time.
  • graphene has excellent thermal conductivity. Therefore, the heat dissipation characteristics of the light emitting device 1 are excellent, and thus the manufacture of a high output device is easy. This is one of particularly excellent characteristics compared with the light emitting element 1 based on the conventional sapphire substrate.
  • graphene has excellent chemical and mechanical stability, especially flexibility and ductility.
  • the carbon layer 20 including graphene may be manufactured to be transparent.
  • graphene and the structure thereon may be transferred separately from the substrate 10.
  • substrate selection was limited by material constants during material preparation (growth, deposition, etc.).
  • graphene is easily separated and transferable, there are no constraints on substrate selection. That is, the graphene and the structure thereon may be separated from the original substrate and transferred onto another substrate having the desired properties. For example, a transition such as a flexible and changeable polymer substrate, a transparent substrate, or a substrate having excellent thermal conductivity is free.
  • the transport efficiency is excellent.
  • the first electrode layer 50 and the light emitting structure layer 40 make surface contact, the contact resistance becomes small.
  • FIGS. 2 to 5 are cross-sectional views of a light emitting device according to another embodiment of the present invention.
  • the same reference numerals are given to the same elements as in the above-described embodiment, and redundant description thereof will be omitted.
  • the thin film layer 60 covering the microstructure 30 is formed, and the light emitting structure layer 40 is formed on the thin film layer 60.
  • the thin film layer 60 is not an n-type semiconductor layer. That is, the light emitting structure layer 40 includes the n-type semiconductor layer 42, the quantum active layer 44, and the p-type semiconductor layer 46.
  • the second electrode layer 70 may be formed on the bottom surface of the carbon layer 20. Since the second electrode layer 70 is in surface contact with the carbon layer 20, the contact resistance is small.
  • a conductive material such as metals such as Au, Ni, Ti, Cr, indium tin oxide (ITO), indium zinc oxide (IZO), and AZO (aluminum zinc oxide), transparent conductive oxides (TCO) such as indium zinc tin oxide (IZTO), conductive polymers, graphene, and the like may be used.
  • the second electrode layer 70 is formed on the upper surface of the carbon layer 20, but is provided in a separate region, not between the carbon layer 20 and the thin film layer 42. It is also possible.
  • the second electrode layer 70 is an n-type semiconductor layer without being in contact with the carbon layer 20. It may be formed to be in contact with the thin film layer 42.
  • the thin film layer 42 may be formed to have a step, and the second electrode layer 70 may be located on an end portion where the light emitting structure layer 40 is not formed.
  • the thin film layer 42 is an n-type semiconductor layer and the light emitting structure layer 40 is formed of the quantum active layer 44 and the p-type semiconductor layer 46 in the above embodiments, the present invention is practiced. Examples are not limited to this structure alone.
  • the thin film layer 42 is formed of an n-GaN layer (a kind of n-type semiconductor layer), and the light emitting structure layer 40 includes an InGaN layer and a p-GaN layer (a kind of p-type semiconductor layer). It is also possible to form an undoped GaN layer between the microstructure 30 and the n-GaN layer to improve the lattice match between the microstructure 30 and the n-GaN layer. It is also possible to form a metal layer for ohmic contact between the electrode layers 50 to conduct electricity between the p-GaN layer and the first electrode layer 50.
  • the thin film layer 42 is a p-type semiconductor layer
  • the light emitting structure layer 40 is composed of a quantum active layer and an n-type semiconductor layer.
  • the first electrode layer 50 may be provided only in a partial region on the p-type semiconductor layer 46 (not shown). As such, when the first electrode layer 50 is provided only in a part of the region on the p-type semiconductor layer 46, a region in which the first electrode layer 50 is not located may function as a light emitting path, in particular, the first electrode layer. This is useful when 50 is not transparent.
  • the second electrode layer 70 may be provided only in a partial region on the surface of the carbon layer 20. The first electrode layer 50 and / or the second electrode layer 70 may be formed in a grid form.
  • FIGS. 8A and 8B are schematic diagrams illustrating a transfer process of graphene.
  • graphene is easily separated from the substrate and easily transferred. That is, the carbon layer 20 and the upper structures thereof may be separated from the lower substrate 10 (see FIG. 8A), and the separated carbon layer 20 and the upper structures may be separated from the other substrate 10a. Can be metastasized (see FIG. 8B).
  • the carbon layer 20 and the substrate 10 may be separated by only mechanical force, which is called a mechanical lift-off. It has been experimentally demonstrated that the carbon layer 20 and the structures above it can be separated from the substrate by mechanical lift off and transferred to other substrates, such as sapphire substrates, glass substrates, metal substrates, and resin substrates.
  • the carbon layer 20 when the carbon layer 20 includes a plurality of graphene, the carbon layer 20 itself may be separated into a portion of the graphene, and the remaining carbon layer 20 of the layer.
  • 9A to 9G are cross-sectional views sequentially illustrating steps of manufacturing a light emitting device according to an embodiment of the present invention.
  • the substrate 10 having the carbon layer 20 including graphene is prepared on the upper side, and the mask layer 80 is coated on the carbon layer 20.
  • the method of forming the carbon layer 20 including graphene on the substrate 10 may be chemical vapor deposition (CVD), but is not limited thereto.
  • CVD chemical vapor deposition
  • graphene may be physically or chemically separated from single crystal graphite.
  • RTCVD rapid heating chemical vapor deposition
  • PECVD plasma chemical vapor deposition
  • ICPCVD inductively coupled plasma chemical vapor deposition
  • MOCVD organic metal chemical vapor deposition
  • the carbon layer 20 is positioned on the substrate 10, but the carbon layer 20 itself may be used as the substrate without using the substrate 10.
  • the mask layer 80 is patterned to form a plurality of openings 90a.
  • the method of patterning the mask layer 80 is well known in the semiconductor manufacturing process, such as e-beam lithography, photolithography, laser interference lithography, or nanoimprint. Method can be used. In addition, a patterning method using a template such as anodized aluminum oxide or block copolymer may be used.
  • damage (not shown) is generated on the surface of the carbon layer 20 through the opening formed in the mask layer 80.
  • a method of generating damage there is a method of using a gas plasma or an ion beam, an electron beam, a proton beam, or a neutron beam as shown, but is not limited thereto.
  • Types of gas used for the gas plasma include O 2 , N 2 , Cl 2 , H, Ar, CF 4 , SF 6 , BCl 3 , ozone, and the like, but are not limited thereto.
  • the mask layer 80 is removed.
  • CVD chemical vapor deposition
  • sputtering thermal or electron beam evaporation, including organometallic chemical vapor deposition (CVD).
  • a physical growth method such as pulse laser deposition, and a vapor-phase transport process using a metal catalyst such as gold may be used.
  • a catalyst-free MOCVD a catalyst-free contamination can be prevented by not using a catalyst, and a fine structure 30 having excellent electrical and optical performance can be manufactured.
  • the surface of graphene is very chemically stable and inactive, making it difficult to grow thin films or microstructures on graphene. That is, since the material grows only in the surface defects or step edge (step edge) of the graphene, it was not possible to make the microstructure to the desired level in the prior art.
  • the position and density of the microstructure 30 have been adjusted by patterning and damage generation, it is not necessary to perform such a method.
  • microstructure 40 it is not necessary to generate damage on the carbon layer 20 to grow the microstructure 40 based on this.
  • the thin film layer 42 is formed so as to completely cover the microstructure 30.
  • Forming the light emitting structure layer 40 includes forming a quantum active layer 44 on the surface of the thin film layer 42, and forming a p-type semiconductor layer 46 on the surface of the quantum active layer 44. It may include a step.
  • the second electrode layer 70 is formed.
  • the present invention is not limited to the embodiment.
  • the second electrode layer 70 may be position between the carbon layer 20 and the thin film layer 42.
  • the second electrode layer 70 may be formed on the upper surface of the carbon layer 20, but may be provided in a separate region other than the carbon layer 20 and the thin film layer 42. It is also possible to provide the second electrode layer 70 on the thin film layer 42.
  • the light emitting device was actually manufactured using the method of manufacturing the light emitting device according to the present invention.
  • the graphene is mechanically separated from the single crystal graphite powder, and then transferred onto the sapphire substrate.
  • an oxygen plasma is applied to the graphene (oxygen partial pressure is 100 mTorr, applied current 50 mA).
  • 10A is an optical microscope photograph of graphene subjected to oxygen plasma treatment.
  • a zinc oxide microstructure is formed on the graphene by the non-catalyst MOCVD method.
  • High purity diethylzinc and oxygen are supplied as reactants for zinc oxide growth.
  • High purity argon was used as a carrier gas.
  • 10B is a scanning electron microscope (SEM) photograph showing the zinc oxide microstructures grown on graphene.
  • FIG. 10C is a scanning electron micrograph showing a gallium nitride thin film layer covering a zinc oxide microstructure.
  • a gallium nitride based pn homojunction light emitting structure layer was formed on the gallium nitride thin film layer. Specifically, an Si-doped n-GaN layer, a 3-cycle GaN / In x Ga 1-x N multiple quantum well (MQW; quantum active layer), and a Mg-doped p-GaN layer are deposited on the zinc oxide microstructure. Coaxial splicing.
  • FIG. 11 is a graph showing measurement results of room temperature photoluminescence spectra of a zinc oxide thin film layer in a light emitting device according to an embodiment of the present invention. It can be seen that photoluminescence peak value appears at 3.4 eV.
  • FIG. 12 is a graph illustrating measurement results of electroluminescence spectra at various applied voltages in the light emitting device according to the embodiment of the present invention. As the applied current increases from 8.1 mA to 8.1 mAfh, it can be seen that the peak value of the electric field emission shifts from 2.71 eV to 2.75 eV.
  • FIG. 13 is a graph showing a measurement result of a current-voltage characteristic curve in a light emitting device according to an embodiment of the present invention. It shows rectification at turn-on voltage of 4.5V and leakage current of 1x10 -5 A at -4V.

Abstract

La présente invention concerne un élément électroluminescent comprenant : une couche de carbone comprenant un graphène; plusieurs fines structures ayant effectué leur croissance en direction du côté supérieur de la couche de carbone; une couche mince destinée à revêtir les fines structures; et une couche à structure électroluminescente formée sur la couche mince.
PCT/KR2011/007461 2010-10-07 2011-10-07 Élément électroluminescent et son procédé de fabrication WO2012047069A2 (fr)

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KR1020100097842A KR101217210B1 (ko) 2010-10-07 2010-10-07 발광소자 및 그 제조방법
KR10-2010-0097842 2010-10-07

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CN103258926A (zh) * 2013-04-28 2013-08-21 西安交通大学 一种led垂直芯片结构及制作方法
CN103378236A (zh) * 2012-04-25 2013-10-30 清华大学 具有微构造的外延结构体
EP2722889A3 (fr) * 2012-10-18 2016-03-23 LG Innotek Co., Ltd. Diode électroluminescente avec efficacité améliorée grâce à l'étalement de la densité de courant

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