WO2012046746A1 - PROCÉDÉ DE FABRICATION DE COUCHE D'ABSORPTION DE LUMIÈRE POUR CELLULE SOLAIRE À FILM MINCE SEMI-CONDUCTEUR COMPOSÉ, ET CIBLE DE PULVÉRISATION CATHODIQUE D'ALLIAGE In-Cu - Google Patents

PROCÉDÉ DE FABRICATION DE COUCHE D'ABSORPTION DE LUMIÈRE POUR CELLULE SOLAIRE À FILM MINCE SEMI-CONDUCTEUR COMPOSÉ, ET CIBLE DE PULVÉRISATION CATHODIQUE D'ALLIAGE In-Cu Download PDF

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Publication number
WO2012046746A1
WO2012046746A1 PCT/JP2011/072899 JP2011072899W WO2012046746A1 WO 2012046746 A1 WO2012046746 A1 WO 2012046746A1 JP 2011072899 W JP2011072899 W JP 2011072899W WO 2012046746 A1 WO2012046746 A1 WO 2012046746A1
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WIPO (PCT)
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film
alloy
alloy film
sputtering
forming
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PCT/JP2011/072899
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English (en)
Japanese (ja)
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藤井　秀夫
富久　勝文
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株式会社神戸製鋼所
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Publication of WO2012046746A1 publication Critical patent/WO2012046746A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

L'invention fournit un procédé de fabrication de couche d'absorption de lumière pour cellule solaire à film mince conducteur composé permettant d'empêcher la formation d'une couche discontinue lors de la formation d'un film In pure par un procédé de pulvérisation, et permettant de réguler l'oxydation de Ga lors de la fabrication par exemple d'une couche d'absorption de lumière à base de CIGS contenant de préférence un Ga. Plus précisément, l'invention concerne un procédé de fabrication de couche d'absorption de lumière pour cellule solaire à film mince semi-conducteur composé contenant un Cu, un In, au moins un élément parmi un Ga et un Al, et un Se; et ce procédé comporte une étape de formation de film en alliage In-Cu par pulvérisation cathodique.
PCT/JP2011/072899 2010-10-05 2011-10-04 PROCÉDÉ DE FABRICATION DE COUCHE D'ABSORPTION DE LUMIÈRE POUR CELLULE SOLAIRE À FILM MINCE SEMI-CONDUCTEUR COMPOSÉ, ET CIBLE DE PULVÉRISATION CATHODIQUE D'ALLIAGE In-Cu WO2012046746A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-225591 2010-10-05
JP2010225591A JP2012079997A (ja) 2010-10-05 2010-10-05 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット

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WO2012046746A1 true WO2012046746A1 (fr) 2012-04-12

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PCT/JP2011/072899 WO2012046746A1 (fr) 2010-10-05 2011-10-04 PROCÉDÉ DE FABRICATION DE COUCHE D'ABSORPTION DE LUMIÈRE POUR CELLULE SOLAIRE À FILM MINCE SEMI-CONDUCTEUR COMPOSÉ, ET CIBLE DE PULVÉRISATION CATHODIQUE D'ALLIAGE In-Cu

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JP (1) JP2012079997A (fr)
TW (1) TWI460874B (fr)
WO (1) WO2012046746A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017106091A (ja) * 2015-12-11 2017-06-15 Ｊｘ金属株式会社 Ｉｎ−Ｃｕ合金スパッタリングターゲット及びその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8703524B1 (en) * 2012-11-29 2014-04-22 Tsmc Solar Ltd. Indium sputtering method and materials for chalcopyrite-based material usable as solar cell absorber layers
AT13564U1 (de) 2013-01-31 2014-03-15 Plansee Se CU-GA-IN-NA Target
JP6798852B2 (ja) 2015-10-26 2020-12-09 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0483378A (ja) * 1990-07-25 1992-03-17 Matsushita Electric Ind Co Ltd カルコパイライト薄膜の作製方法及び太陽電池
JPH05145100A (ja) * 1991-11-21 1993-06-11 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法および製造装置
JP2000501232A (ja) * 1995-12-12 2000-02-02 デイヴィス，ジョセフ アンド ネグレイ 高効率太陽電池製造のための電着によるＣｕ▲下ｘ▼Ｉｎ▲下ｙ▼Ｇａ▲下ｚ▼Ｓｅ▲下ｎ▼（ｘ＝０〜２，ｙ＝０〜２，ｚ＝０〜２，ｎ＝０〜３）先駆薄膜の製造
WO2003005456A1 (fr) * 2001-07-06 2003-01-16 Honda Giken Kogyo Kabushiki Kaisha Procede de formation d'une couche absorbant la lumiere
JP2003282600A (ja) * 2002-03-25 2003-10-03 Honda Motor Co Ltd 光吸収層の作製方法および装置
JP2007503708A (ja) * 2003-08-14 2007-02-22 ユニヴァーシティ オブ ヨハネスバーグ Ｉｂ−ｉｉｉａ−ｖｉａ族四元合金又は五元合金以上の合金から成る半導体薄膜を製造するための方法
JP2007529907A (ja) * 2004-03-15 2007-10-25 ソロパワー、インコーポレイテッド 太陽電池製造のための半導体の薄層を堆積する方法および装置
JP2009513020A (ja) * 2005-10-19 2009-03-26 ソロパワー、インコーポレイテッド 前駆体層を光起電性吸収体に変換するための方法と装置

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TWM385798U (en) * 2010-02-25 2010-08-01 Univ Minghsin Sci & Tech Photovoltaic cell structure

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* Cited by examiner, † Cited by third party
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JPH0483378A (ja) * 1990-07-25 1992-03-17 Matsushita Electric Ind Co Ltd カルコパイライト薄膜の作製方法及び太陽電池
JPH05145100A (ja) * 1991-11-21 1993-06-11 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法および製造装置
JP2000501232A (ja) * 1995-12-12 2000-02-02 デイヴィス，ジョセフ アンド ネグレイ 高効率太陽電池製造のための電着によるＣｕ▲下ｘ▼Ｉｎ▲下ｙ▼Ｇａ▲下ｚ▼Ｓｅ▲下ｎ▼（ｘ＝０〜２，ｙ＝０〜２，ｚ＝０〜２，ｎ＝０〜３）先駆薄膜の製造
WO2003005456A1 (fr) * 2001-07-06 2003-01-16 Honda Giken Kogyo Kabushiki Kaisha Procede de formation d'une couche absorbant la lumiere
JP2003282600A (ja) * 2002-03-25 2003-10-03 Honda Motor Co Ltd 光吸収層の作製方法および装置
JP2007503708A (ja) * 2003-08-14 2007-02-22 ユニヴァーシティ オブ ヨハネスバーグ Ｉｂ−ｉｉｉａ−ｖｉａ族四元合金又は五元合金以上の合金から成る半導体薄膜を製造するための方法
JP2007529907A (ja) * 2004-03-15 2007-10-25 ソロパワー、インコーポレイテッド 太陽電池製造のための半導体の薄層を堆積する方法および装置
JP2009513020A (ja) * 2005-10-19 2009-03-26 ソロパワー、インコーポレイテッド 前駆体層を光起電性吸収体に変換するための方法と装置

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Title
STEVEN P. GRINDLE ET AL.: "Preparation and properties of CuInS2 thin films produced by exposing rf-sputtered Cu-In films to an H2S atmosphere", APPL. PHYS. LETT., vol. 35, no. 1, 1979, pages 24 - 26 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017106091A (ja) * 2015-12-11 2017-06-15 Ｊｘ金属株式会社 Ｉｎ−Ｃｕ合金スパッタリングターゲット及びその製造方法

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TWI460874B (zh) 2014-11-11
TW201220522A (en) 2012-05-16

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