WO2012043250A1 - Procédé et dispositif pour former une pellicule d'isolation - Google Patents

Procédé et dispositif pour former une pellicule d'isolation Download PDF

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Publication number
WO2012043250A1
WO2012043250A1 PCT/JP2011/071080 JP2011071080W WO2012043250A1 WO 2012043250 A1 WO2012043250 A1 WO 2012043250A1 JP 2011071080 W JP2011071080 W JP 2011071080W WO 2012043250 A1 WO2012043250 A1 WO 2012043250A1
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Prior art keywords
insulating film
plasma
gas
film forming
substrate
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PCT/JP2011/071080
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English (en)
Japanese (ja)
Inventor
西森　年彦
河野　雄一
嶋津　正
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三菱重工業株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Definitions

  • the present invention relates to an insulating film forming apparatus and method.
  • an insulating film such as a silicon oxide film or a silicon nitride film is used, which is formed using a plasma CVD (Chemical Vapor Deposition) apparatus or the like.
  • the trench 31 (step) having a high aspect ratio (for example, 10: 1) formed in the substrate 30 the thickness of the SiN film 33 on the side wall 32 is reduced, and insulation at the reduced portion is performed. Performance deteriorates.
  • the reason why the thickness of the SiN film 33 is reduced on the side wall 32 is that the gas contributing to the film formation adheres to the side wall 32, so that the gas contributing to the film formation reaches the side wall 32 in the deep part of the trench 31. This is because the amount is reduced. Further, as shown in FIG. 9B, the higher the gas deposition probability to the side wall 32, the thinner the side wall 32 becomes.
  • SiH 4, N 2 if the film formation method of NH 3 as a raw material, in order to form a SiN film having excellent insulating properties, sticking probability is high excited species, for example, SiH 2 It is necessary to use a condition in which (NH 2 ) [adhesion probability: 0.08] occurs frequently.
  • the gas having a higher adhesion probability has a property that the film thickness on the side wall becomes thinner, and sufficient step coverage cannot be obtained (refer to Conventional Example 2 in Table 1 described later).
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide an insulating film forming apparatus and method that improve the insulation as well as the step coverage.
  • An insulating film forming apparatus for solving the above-mentioned problems is as follows.
  • a gas supply means for supplying a plurality of gases, including a main source gas containing Si and a sub-source gas not containing Si; Plasma generating means for generating plasma of the gas; Control means for controlling the gas supply means and the plasma generation means,
  • the control means includes At least the main raw material gas is supplied by the gas supply means, and the plasma generation means generates plasma containing excited species having a lower probability of adhesion to the substrate than the main excited species at the time of plasma generation, and uses the plasma
  • a film forming step for forming a precursor film on the step, After the film formation step, the auxiliary material gas is supplied by the gas supply unit, the plasma of the auxiliary material gas is generated by the plasma generation unit, and the composition ratio of Si in the precursor film is generated using the plasma.
  • the composition ratio reducing step is performed by reducing the thickness
  • An insulating film forming apparatus for solving the above-mentioned problems is as follows.
  • the control means is characterized in that the film forming step and the composition ratio decreasing step are alternately performed a plurality of times.
  • An insulating film forming apparatus for solving the above-described problem is In the insulating film forming apparatus according to the first or second invention, Furthermore, bias application means for applying a bias to the substrate, The control means includes In the composition ratio decreasing step, a bias is applied to the substrate by the bias applying means.
  • the control means includes Before the composition ratio reduction step, A rare gas is supplied by the gas supply means, a bias is applied to the substrate by the bias application means, a plasma of the rare gas is generated by the plasma generation means, and the precursor film is sputter etched using the plasma. A sputter etch process is performed.
  • the control means includes After the composition ratio reduction step, A rare gas is supplied by the gas supply means, a bias is applied to the substrate by the bias application means, a plasma of the rare gas is generated by the plasma generation means, and the insulating film is sputter etched using the plasma. A sputter etch process is performed.
  • An insulating film forming apparatus for solving the above-described problems is as follows.
  • SiH 4 is used as the main source gas
  • SiH 3 is generated as an excited species having a low adhesion probability.
  • An insulating film forming method for solving the above-described problems is as follows.
  • an insulating film forming method for forming an insulating film covering a step formed on a substrate Supplying at least the main source gas out of the main source gas containing Si and the auxiliary source gas not containing Si, and generating plasma containing excited species having a lower adhesion probability to the substrate than the main excited species at the time of plasma generation
  • a film forming step of forming a precursor film on the step using the plasma After the film forming step, the auxiliary material gas is supplied, plasma of the auxiliary material gas is generated, and the composition ratio of Si in the precursor film is reduced by using the plasma to form an insulating film. And a reduction process.
  • An insulating film forming method according to an eighth invention for solving the above-described problems is as follows.
  • the film forming step and the composition ratio decreasing step are alternately performed a plurality of times.
  • An insulating film forming method according to a ninth invention for solving the above-described problems is as follows.
  • a bias is applied to the substrate.
  • An insulating film forming method for solving the above-mentioned problems is as follows.
  • a sputter etch step of supplying a rare gas, applying a bias to the substrate, generating a plasma of the rare gas, and sputter-etching the precursor film using the plasma;
  • the sputter etching process is performed before the composition ratio decreasing process.
  • An insulating film forming method according to an eleventh invention for solving the above problem is as follows: In the insulating film forming method according to the ninth invention, A sputter etch step of supplying a rare gas, applying a bias to the substrate, generating a plasma of the rare gas, and sputter-etching the insulating film using the plasma; The sputter etching process is performed after the composition ratio decreasing process.
  • An insulating film forming method for solving the above-described problem is In the insulating film forming method according to any one of the seventh to eleventh inventions, When the insulating film is a silicon nitride film, SiH 4 is used as the main source gas, Using at least one of NH 3 or N 2 as the auxiliary source gas, SiH 3 is generated as an excited species having a low adhesion probability.
  • an insulating film having both step coverage and good insulating properties can be formed as the insulating film covering the step.
  • an insulating film having a desired film thickness can be formed on the side wall of the step.
  • the reaction rate in the composition ratio reduction step, the reaction rate can be promoted to shorten the time.
  • the film forming process in the film forming process, blockage near the entrance of the step can be prevented, and the step coverage can be further improved, and the composition ratio decreasing step after the sputter etching step The time can be shortened.
  • blockage in the vicinity of the step entrance can be prevented in the film forming process, and the step coverage can be further improved.
  • a silicon nitride film having good step coverage and high insulation can be formed as the insulating film covering the steps.
  • FIG. 3 is a time chart showing an example (Example 1) of an insulating film forming method in the insulating film forming apparatus shown in FIG.
  • FIGS. 3A and 3B are diagrams illustrating a process of forming a silicon nitride film by the insulating film forming method illustrated in FIG. 2, where FIG. 3A is a cross-sectional view of a step before formation, FIG. c) is a cross-sectional view of the step in the nitriding step, and (d) is a cross-sectional view of the step after the entire process is repeated a plurality of times.
  • FIGS. 6A and 6B are diagrams illustrating a process of forming a silicon nitride film by the insulating film forming method illustrated in FIG. 5, in which FIG. 5A is a cross-sectional view of a step in a film forming process, and FIG. (C) is sectional drawing of the level
  • FIG. 7A is a cross-sectional view of a step in a film forming process
  • FIG. (C) is sectional drawing of the level
  • (d) is sectional drawing of the level
  • step difference coverage in the conventional plasma CVD apparatus (a) is a case where a sticking probability is 0.1, (b) is a case where a sticking probability is 0.8.
  • FIG. 1 is a schematic configuration diagram showing an example of an embodiment of an insulating film forming apparatus according to the present invention.
  • the insulating film forming apparatus of this embodiment is a so-called plasma CVD apparatus.
  • the inside of a metal cylindrical vacuum chamber 1 is configured as a processing chamber 2, and a circular opening made of an insulating material is formed in the upper opening of the vacuum chamber 1.
  • a plate-like ceiling board 3 is disposed so as to close the upper opening.
  • a lower support 10 that holds the support 4 and the support 4 is provided below the vacuum chamber 1, and a substrate 5 (for example, Si wafer) made of a semiconductor material is placed on the upper surface of the support 4.
  • the vacuum chamber 1 is made of, for example, a metal such as aluminum, and the inner wall thereof is anodized, and the ceiling plate 3 is made of, for example, ceramics such as alumina.
  • a high-frequency antenna 6 made of, for example, a plurality of circular rings is disposed above the ceiling plate 3.
  • a high-frequency antenna (RF) having a frequency of several hundred kHz to several hundred MHz is connected to the high-frequency antenna 6 via a matching unit 7.
  • a power source 8 is connected (plasma generating means).
  • the vacuum chamber 1 is provided with a plurality of gas nozzles 9 for introducing a plurality of desired gases into the processing chamber 2 (gas supply means).
  • an electrode unit 11 is provided on the support table 4 that supports the substrate 5, and a low frequency (LF) power source 13 is connected to the electrode unit 11 via a matching unit 12.
  • the low frequency power supply 13 is configured to apply a lower frequency than that of the high frequency power supply 8 to the electrode portion 11 and to apply a bias power to the substrate 5 (bias applying means).
  • the support table 4 is also provided with an electrostatic chuck mechanism, and the substrate 5 can be attracted and held on the surface of the support table 4 by power supply from the electrostatic chuck power source.
  • the insulating film forming apparatus of this embodiment also includes a control device (control means) for controlling the above-described plasma generation means, gas supply means, and bias application means.
  • the insulating film forming apparatus configured as described above, by supplying RF power to the high-frequency antenna 6, electromagnetic waves are incident on the vacuum chamber 1 through the ceiling plate 3 and introduced into the vacuum chamber 1 through the gas nozzle 9. The gas is turned into plasma by the incident electromagnetic wave. And the thin film is formed on the board
  • a process gas such as silane (SiH 4 ), ammonia (NH 3 ), nitrogen (N 2 ) or the like is used.
  • the insulating film forming apparatus having the above configuration is an example, and any other structure may be used as long as it is a plasma CVD apparatus capable of performing the insulating film forming method of the present embodiment to be described later. Various configurations can be applied.
  • excited species having a low adhesion probability to the substrate surface are selected from the main source gas (containing Si) and the auxiliary source gas (containing no Si) used for forming the insulating film.
  • a precursor film having good step coverage with respect to a step is formed by generating plasma containing the plasma and performing film formation using the plasma. Thereafter, the formed precursor film is subjected to plasma processing using the plasma of the auxiliary material gas, and the Si composition ratio is reduced from the precursor film, thereby forming an insulating film having high insulating properties.
  • FIG. 3A illustrates the trench 20 formed in the substrate 5 with a depth of 10 ⁇ m and a width of 1 ⁇ m.
  • the step is not limited to the trench, and may be a step having another shape.
  • the film is not limited to a silicon nitride film, and may be a silicon oxide film (SiO film), a silicon oxynitride film (SiON film), or the like.
  • a film forming process is performed.
  • a gas nozzle 9 is used to supply SiH 4 gas (main raw material gas) and NH 3 gas (sub raw material gas) used for forming the SiN film, and plasma generating means (high frequency antenna 6, matching unit). 7.
  • SiH 3 [attachment probability: 0.05] which is an excitation species having a lower adhesion probability to the substrate 5 than SiH 2 (NH 2 ) [0.08], which is the main excitation species, is used.
  • a plasma is generated so as to include more of the excited species than the main excited species, and a precursor film 22 is formed in the trench 20 using the plasma (FIGS. 2, 3A, and 3B). )reference).
  • the precursor film 22 is Si-rich in the film composition (particularly when only the SiH 4 gas is supplied), and the insulating property is not high in that state.
  • a nitriding process (composition ratio decreasing process) is performed after the film forming process.
  • this nitriding process using a gas nozzle 9, supplying NH 3 gas by-material gas (or N 2 gas), using a plasma generating means (radio-frequency antenna 6, the matching unit 7, the high-frequency power source 8), NH A plasma of 3 gas (or N 2 gas) is generated, and the Si composition ratio is reduced by using the plasma to form the SiN film 23 (see FIGS. 2 and 3C). That is, by nitriding the precursor film 22 having good step coverage but not high insulation with NH 3 gas (or N 2 gas) plasma, the Si composition ratio is reduced, and the step coverage is improved.
  • the SiN film 23 is good and has high insulating properties.
  • a film forming process with good step coverage and a nitriding process with good insulation are alternately performed at least once to form a SiN film 23 having a desired film thickness on the side wall 21 of the trench 20. (See FIG. 3D).
  • the SiN film 23 having a desired film thickness with good step coverage and high insulation can be formed.
  • one nitriding step is 180 seconds, and the precursor film 22 is nitrided with plasma of NH 3 gas (or N 2 gas).
  • the RF power conditions at this time may be the same as the conditions in the film forming process, or may be changed as appropriate.
  • the film thickness that can be nitrided with NH 3 gas plasma is 0.3 nm
  • the film thickness that can be nitrided with N 2 gas plasma is 0.5 nm
  • N 2 gas is more NH 3 gas. Thicker film that can be nitrided than gas.
  • the experimental examples 1 to 3 of this example and the conventional examples 1 and 2 are compared with respect to the film thickness of the inner wall of the trench. At this time, using the pattern substrate on which the trench 20 was formed, both the experimental examples 1 to 3 of this example and the conventional examples 1 and 2 were formed so that the film thickness on the surface of the substrate 5 was 30 nm.
  • the film forming process and the nitriding process are alternately repeated about 60 to 100 times to form a film.
  • the thickness is 5 nm on the side wall 21 having a depth of 4 ⁇ m from the surface of the substrate 5 (FIG.
  • Example 2 This embodiment is based on the first embodiment. Therefore, the description of the present embodiment will be described with the description overlapping with that of the first embodiment, for example, the configuration of the insulating film forming apparatus and the basic portion of the insulating film forming method (film forming process, nitriding process) are omitted.
  • a bias is applied to the substrate 5 using bias applying means (electrode unit 11, matching unit 12, low frequency power supply 13) in the nitriding step described in the first embodiment.
  • bias applying means electrode unit 11, matching unit 12, low frequency power supply 13
  • ions and electrons in the plasma are irradiated to the substrate 5.
  • energy to the precursor film 22 obtained in the film forming process the nitriding reaction is promoted. ing.
  • the LF power is preferably 250 W or less, which is less affected by the sputter etch amount.
  • the nitriding rate can be increased, and the nitriding time, in other words, the nitriding step can be shortened.
  • the substrate evaluated in FIG. 4 has a diameter of 300 mm (30 cm). Therefore, when the diameter of the substrate are different, in terms of the above 250W to the LF power density (W / cm 2) per substrate area (approximately 0.35W / cm 2.), Such LF power density A bias power as described below may be applied according to the substrate diameter (substrate area).
  • Example 3 This embodiment is also based on the first embodiment. Therefore, as in the second embodiment, the description overlapping with the first embodiment is omitted, and the present embodiment will be described. Note that the present embodiment may be based on the second embodiment.
  • a sputter etch process is added between the film forming process and the nitriding process described in the first embodiment. Specifically, as shown in the time chart of FIG. 5, the sputter etch process is performed after the film formation process and before the nitriding process. This is the same even when the film forming process and the nitriding process are repeated a plurality of times.
  • a rare gas such as Ar is supplied using a gas nozzle 9, and a bias is applied to the substrate 5 using bias applying means (electrode unit 11, matching unit 12, low frequency power supply 13). Then, plasma generation means (high frequency antenna 6, matching unit 7, high frequency power supply 8) is used to generate a rare gas plasma, and the precursor film 22 obtained in the film forming process using the plasma is sputter etched. Is going.
  • the precursor film 22 is formed in the trench 20 using the film formation process described in the first embodiment (see FIG. 6A).
  • plasma containing excited species SiH 3 having a low adhesion probability is used.
  • an overhang portion 22 a is still formed in the precursor film 22 near the entrance of the trench 20.
  • it is preferable that the overhang portion 22a is small (thin film thickness is thin).
  • the overhang portion 22a is sputter-etched using a rare gas, for example, Ar gas plasma, by performing a sputter etch process after the film formation process is completed.
  • the hang portion 22a is removed to prevent the vicinity of the entrance of the trench 20 (see FIG. 6B).
  • LF 1500 W.
  • the precursor film 22 formed in the trench 20 is nitrided to form the SiN film 23 (see FIG. 6C). Then, the film forming process, the sputter etching process, and the nitriding process are performed at least once in this order to form the SiN film 23 having a desired film thickness on the side wall 21 of the trench 20 (FIG. 6 ( d)).
  • the film thickness on the side wall 21 of the trench 20 is further increased, so that the step coverage is further improved and the SiN film 23 having a desired film thickness can be formed.
  • the film thickness to be nitrided in the nitriding process is reduced, so that the time in the nitriding process can be shortened.
  • Example 4 This embodiment is also based on the first embodiment. Therefore, as in the second embodiment, the description overlapping with the first embodiment is omitted, and the present embodiment will be described. This embodiment may also be based on the second embodiment. Further, this embodiment corresponds to a modification of the third embodiment.
  • the sputter etch process is performed after the nitriding process described in the first embodiment. That is, the order of adding the sputter etch process is different from that of the third embodiment. This is the same even when the film forming process and the nitriding process are repeated a plurality of times.
  • a rare gas for example, Ar
  • a bias is applied to the substrate 5 to generate a rare gas plasma.
  • Sputter etching of the SiN film 23 obtained after the nitriding process is performed using plasma.
  • the precursor film 22 is formed in the trench 20 using the film forming process described in the first embodiment (see FIG. 8A), and then the trench 20 is formed using the nitriding process described in the first embodiment.
  • the precursor film 22 thus formed is nitrided to form a SiN film 23 (see FIG. 8B).
  • an overhang portion 22a is still formed in the precursor film 22 near the entrance of the trench 20, and in the nitriding process, Since the precursor film 22 is nitrided, an overhang portion 23 a is formed near the entrance of the trench 20. In order to further improve the step coverage, it is preferable that the overhang portion 23a is small (thin film thickness is thin).
  • the overhang portion 23a is sputter-etched by using a rare gas, for example, Ar gas plasma, by performing a sputter etch process after the nitridation process is completed.
  • the portion 23a is removed to prevent the vicinity of the entrance of the trench 20 (see FIG. 8C).
  • the sputter etching time does not have to be long, for example, about 0.1 seconds.
  • the film forming process, the nitriding process, and the sputter etching process are performed at least once in this order to form the SiN film 23 having a desired film thickness on the side wall 21 of the trench 20 (FIG. 8 ( d)).
  • the step coverage is further improved, and the SiN film 23 having a desired film thickness with high insulation can be formed.
  • the present invention is applied to a semiconductor device, and is particularly suitable as an insulating film covering a step having a high aspect ratio.

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Abstract

L'invention concerne un dispositif et un procédé servant à former une pellicule d'isolation ayant une capacité améliorée à couvrir une différence de niveau et des propriétés isolantes améliorées. À cet effet, quand une pellicule d'isolation est formée pour couvrir une différence de niveau qui a été formée sur un substrat, les traitements suivants sont effectués : un processus de formation de pellicule, où un gaz de matière première primaire et un gaz de matière première auxiliaire secondaire à utiliser pour former une pellicule d'isolation sont injectés, un plasma est généré et contient une espèce excitée ayant une probabilité d'adhésion par rapport au substrat inférieure à l'espèce excitée primaire quand le plasma est généré, et une pellicule de précurseur est formée sur la différence de niveau au moyen dudit plasma; et un processus de réduction du ratio de composition (processus de nitruration), où un gaz de matière première auxiliaire est injecté après le processus de formation de pellicule et un plasma du gaz de matière première auxiliaire est généré, et une pellicule d'isolation est formée au moyen dudit plasma pour réduire le composant gazeux de matière première primaire de la pellicule de précurseur. De plus, le processus de formation de pellicule et le processus de réduction du ratio de composition sont effectués en alternance.
PCT/JP2011/071080 2010-09-30 2011-09-15 Procédé et dispositif pour former une pellicule d'isolation WO2012043250A1 (fr)

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KR101576637B1 (ko) * 2014-07-15 2015-12-10 주식회사 유진테크 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법
JP6733516B2 (ja) * 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法
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