WO2012037720A1 - 用于制造封装发光二极管的方法 - Google Patents

用于制造封装发光二极管的方法 Download PDF

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Publication number
WO2012037720A1
WO2012037720A1 PCT/CN2010/077171 CN2010077171W WO2012037720A1 WO 2012037720 A1 WO2012037720 A1 WO 2012037720A1 CN 2010077171 W CN2010077171 W CN 2010077171W WO 2012037720 A1 WO2012037720 A1 WO 2012037720A1
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WO
WIPO (PCT)
Prior art keywords
emitting diode
light emitting
substrate
cover plate
cover
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Application number
PCT/CN2010/077171
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English (en)
French (fr)
Inventor
詹国光
Original Assignee
Chang Kuo-Kuang
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Filing date
Publication date
Application filed by Chang Kuo-Kuang filed Critical Chang Kuo-Kuang
Priority to KR1020137006583A priority Critical patent/KR20140003394A/ko
Priority to US13/824,894 priority patent/US9204558B2/en
Priority to PCT/CN2010/077171 priority patent/WO2012037720A1/zh
Priority to DE112010005894T priority patent/DE112010005894T5/de
Priority to JP2013528493A priority patent/JP2013538461A/ja
Publication of WO2012037720A1 publication Critical patent/WO2012037720A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/15—Thermal insulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Definitions

  • a conventional packaged light-emitting diode is a phosphor mixed with a silicone resin or an epoxy resin, and is coated with a silicone or epoxy resin around a light-emitting diode chip, and the light generated by the light-emitting diode can be used to excite the phosphor. In turn, various colors or white visible light can be emitted.
  • a primary object of the present invention is to provide a packaged light emitting diode process that provides a preferred lifetime and stability of the fabricated light emitting diode.
  • the present invention provides a method for fabricating a packaged light emitting diode comprising the steps of: preparing a substrate, constructing a circuit, and fixing.
  • the material is a substrate and a cover, the substrate has a first surface and a second surface, the cover has a third surface and a fourth surface, and the second surface and the third surface
  • the person has a flange that defines a recess and the cover plate includes a phosphor layer.
  • the building circuit is configured to fix at least one LED circuit on the second surface, and the LED circuit comprises at least one LED chip.
  • the fixing is to fix the cover plate on the substrate in a vacuum environment, so that the recess is closed by the cover plate and the substrate to form a closed space, and the LED circuit is located in the closed space.
  • the light-emitting diode chip of the present invention and the fluorescent layer are separated by a vacuum interlayer, which can reduce the heat transferred to the fluorescent layer, and can reduce the deterioration of the cover plate and the fluorescent substance, and at the same time, the cover plate can be made of glass.
  • the cover plate can be made of glass.
  • 2 to 5 are schematic views of continuous production of the present invention.
  • 6 and 7 are schematic cross-sectional views showing other embodiments of the present invention.
  • Substrate 24 Fluorescent layer 11: First side 25: Another protective layer
  • the present invention provides a method for fabricating a packaged light emitting diode that can be used to fabricate a light emitting diode package as shown in FIG.
  • the method for manufacturing a packaged light emitting diode includes the following steps:
  • a substrate 1 and a cover 2 are taken.
  • the substrate 1 made of copper alloy or ceramic has a first surface 11 and a second surface 12.
  • the cover 2 has a third surface 21 and a fourth surface 22, and the second surface 12 is formed with a convex surface.
  • the flange 3 is surrounded by a groove, wherein the flange 3 may be integrally formed on the substrate 1 or may be assembled or glued to the substrate 1 by other parts, in other possible embodiments of the present invention,
  • the flange 3 can also be located on the third face 21.
  • the cover plate 2 comprises a fluorescent layer, more specifically, the cover plate is mixed and distributed with a fluorescent substance.
  • the cover plate 2 can be made of glass, acrylic or other permeable material, and is manufactured by The fluorescent material powder is mixed and mixed in the raw material, so that the formed cover plate 2 is a fluorescent layer.
  • the surface of the third surface 21 or the fourth surface 22 of the cover plate 2 is formed with a concave-convex texture, and the concave and convex lines can be used to reflect and refract light to exhibit the effect of collecting light.
  • the LED circuit 4 may include one or more LED chips 41 and may include a wire 42 connected to the LED chip.
  • the LED circuit 4 is disposed using SMT (Surface Mount Technology). ) Process.
  • the cover plate 2 is fixedly disposed on the substrate 1 in a vacuum environment, and the groove is closed by the cover plate 2 and the substrate 1 to form a closed space, and the closed space is in a vacuum state, and the LED circuit is in a vacuum state. 4 is located in the enclosed space.
  • the cover plate 2 and the substrate 1 are fixed by the photo-curing resin 5, and in other possible embodiments of the present invention, if the cover plate 2 is made of acrylic or other material that is easy to melt, it can also be utilized.
  • the high frequency is heated, and the cover 2 is further pressed against the substrate 1.
  • the light-emitting diode of the package shown in FIG. 1 can be used in the above steps, wherein the light-emitting diode chip 41 is separated from the cover plate 2 and is in a vacuum state in the closed space, so that the heat generated by the light-emitting diode chip 41 is not easily transmitted to
  • the cover plate 2 can prevent the fluorescent substance in the cover plate 2 from being deteriorated by the high temperature; at the same time, the fluorescent substance in the cover plate 2 is coated in other materials of the cover plate 2, thereby preventing the fluorescent substance from being directly exposed to the outside, and It can prevent the fluorescent substance from changing due to contact with moisture.
  • the closed space between the cover plate 2 and the substrate 1 is in a vacuum state, which can reduce the light generated by the LED chip 41 from contacting the air to cause loss, and can maintain better luminous efficiency; meanwhile, the cover plate 2 can form a ffl
  • the embossed road provides a concentrated effect and maintains better lighting.
  • the cover 2 may further include a protective layer 23 , the protective layer 23 is located on the fourth surface 22 , and the protective layer may be used to block outside air or water to avoid fluorescence.
  • the fluorescent substance on the surface of the layer 24 contacts air and water, and the stability of the fluorescent layer 24 can be improved.
  • the cover 2 can further include another protective layer 25 , so that the fluorescent layer 24 is sandwiched between the two protective layers 23 , 25 , and the stability of the fluorescent layer 24 is further improved. Degree.
  • the method for manufacturing a packaged light emitting diode provided by the present invention can be used to manufacture a packaged light emitting diode, which can improve the durability and stability of the packaged light emitting diode, and has an improved effect.

Description

用于制造封装发光二极管的方法
技术领域 本发明关于封装的发光二极管， 特别是一种封装发光二极管的制造方 法。 背景技术 现有的封装发光二极管， 是以荧光粉混合于汐胶或环氧树脂中， 并以 汐胶或环氧树脂包覆于发光二极管芯片周围， 可利用发光二极管产生的光 激发荧光粉， 进而可发出各种颜色或白色的可见光。
然而， 此种封装发光二极管却容易有不稳定与寿命不长的问题。 硅胶 与环氧树脂外表可能受到水分侵蚀， 使荧光粉与水分接触， 而造成荧光粉 变质， 损耗封装发光二极管的寿命； 此外， 发光二极管芯片在使用时将会 使温度上升， 尤其， 在不断提高发光二极管照明功率的同时， 发光二极管 芯片将产生更多的热， 使周围的硅胶、 环氧树脂与荧光粉发生变质， 影响 封装发光二极管的稳定度与使用寿命。 发明内容 本发明的主要目的在于提供一种封装的发光二极管工艺， 使所制造出 的发光二极管具有较佳的寿命与稳定度。
为达成上述目的， 本发明提供一种用于制造封装发光二极管的方法， 包含下列步骤： 备料、 建置电路与固定。 其中， 备料是取一基板及一盖板， 该基板具有一第一面与一第二面， 该盖板具有一第三面与一第四面， 该第二面与该第三面其中一者具有一凸 缘， 该凸缘围构有一凹槽， 该盖板包含一荧光层。
其中， 建置电路是在该第二面固定设置至少一发光二极管电路， 该发 光二极管电路包含至少一发光二极管芯片。 其中， 固定是在真空环境下将该盖板固定设置在该基板， 使该凹槽被 该盖板及该基板所封闭形成一封闭空间， 该发光二极管电路位于该封闭空 间中。
借此， 本发明中的发光二极管芯片与荧光层之间隔有真空夹层， 可减 少传递至荧光层的热， 而可减少盖板与荧光物质变质的情形， 同时， 该盖 板更可以玻璃制作而成， 避免水分侵蚀而接触荧光物质， 进一步减少荧光 物质变质的情形， 提高发光二极管的使用寿命。 附图说明 图 1为本发明的局部剖视图。
图 2至图 5为本发明的连续生产示意图。
图 6与图 7为本发明其他实施例的剖面示意图。
【主要组件符号说明】
1： 基板 24: 荧光层 11: 第一面 25: 另一保护层
12: 第二面 3: 凸缘
2: 盖板 4: 发光二极管电路 21: 第三面 41: 发光二极管芯片
22: 第四面 42: 导线
23: 保护层 5: 光硬化树脂 具体实施方式 以下仅以实施例说明本发明可能的实施形态， 并非用来限制本发明所 欲保护的范畴， 在此声明。
本发明提供一种用于制造封装发光二极管的方法，可供用以制造如图 1 所示封装的发光二极管。
请参考图 2至图 5,本发明所提供用于制造封装发光二极管的方法包括 有以下步骤：
备料。 取一基板 1与一盖板 2。 其中， 该铜合金或陶瓷制成的基板 1具 有一第一面 11与一第二面 12, 该盖板 2具有一第三面 21与一第四面 22, 该第二面 12形成有一凸缘 3, 该凸缘 3围构有一凹槽， 其中该凸缘 3可能 为一体成型于该基板 1 , 或可利用其他零件组装或胶合于基板 1形成， 于本 发明其他可能的实施例中， 该凸缘 3也可位于该第三面 21。 该盖板 2包括 有一荧光层， 更明确地说， 该盖板中混合分布有荧光物质， 具体而言， 该 盖板 2可由玻璃、 压克力或其他可透光材料制成， 制造时于原料中混合加 入荧光物质粉末， 使制作成型的盖板 2即为一荧光层。 较佳者该盖板 2的 第三面 21或第四面 22表面可形成有凹凸紋路， 可利用凹凸紋路对光进行 反射与折射， 以发挥聚光的效果。 该发光二极管电路 4可包括一至多个发光二极管芯片 41 , 并可包括连接于 发光二极管芯片的导线 42, 其中较佳者， 该发光二极管电路 4的设置可釆 用 SMT ( Surface Mount Technology表面黏着技术） 工艺。
固定。 于真空环境下将该盖板 2固定设置于该基板 1 ,使该凹槽被该盖 板 2与该基板 1所封闭， 形成一封闭空间， 且该封闭空间内为真空状态， 该发光二极管电路 4则位于该封闭空间中。 其中， 该盖板 2与该基板 1之 间是利用光硬化树脂 5加以固定， 于本发明其他可能的实施例中， 若该盖 板 2为压克力或其他易于熔融的材料， 也可利用高周波加热， 再进一步将 该盖板 2与该基板 1压合。
利用上述步骤， 即可用以制造图 1 所示封装的发光二极管， 其中， 发 光二极管芯片 41与该盖板 2分离， 且封闭空间中为真空状态， 使发光二极 管芯片 41所产生的热不易传递至盖板 2, 可避免盖板 2中的荧光物质受到 高温影响而变质； 同时， 盖板 2中的荧光物质被包覆于盖板 2的其他材料 中， 可避免荧光物质直接向外暴露， 而可避免荧光物质接触水分而变质。
此外， 盖板 2与基板 1之间的封闭空间为真空状态， 可减少发光二极 管芯片 41所产生的光接触空气而产生损耗，可维持较佳的发光效率； 同时, 该盖板 2可形成 ffl凸紋路， 可提供聚光的效果， 维持较佳的照明能力。
请参考图 6, 于本发明其他实施例中，该盖板 2可进一步包括一保护层 23, 该保护层 23位于该第四面 22, 可利用该保护层阻隔外界的空气或水， 避免荧光层 24表面的荧光物质接触空气与水， 而可提高该荧光层 24的稳 定度。 另请参考图 7, 该盖板 2可更进一步包含另一保护层 25, 使该荧光 层 24被夹设于二保护层 23、 25之间， 又更进一步提高该荧光层 24的稳定 度。
综上所述， 使本发明所提供的用于制造封装发光二极管的方法可用以 制造封装的发光二极管， 可提高封装的发光二极管的耐用度与稳定度， 实 为具有进步的功效。

Claims

权利要求书
1.一种用于制造封装发光二极管的方法， 包含下列步骤：
备料： 取一基板及一盖板， 该基板具有一第一面与一第二面， 该盖板 具有一第三面与一第四面， 该第二面与该第三面其中一者具有一凸缘， 该 凸缘围构有一凹槽， 该盖板包含一荧光层；
建置电路： 于该第二面固定设置至少一发光二极管电路， 该发光二极 管电路包含至少一发光二极管芯片；
固定： 于真空环境下将该盖板固定设置于该基板， 使该 槽被该盖板 及该基板所封闭形成一封闭空间， 该发光二极管电路位于该封闭空间中。
2.如权利要求 1 所述用于制造封装发光二极管的方法， 其中该盖板即 为该荧光层， 该盖板内混合分布有荧光物质。
3.如权利要求 2所述用于制造封装发光二极管的方法， 其中该盖板为 玻璃板。
4.如权利要求 1 所述用于制造封装发光二极管的方法， 其中该盖板更 包含一保护层， 该保护层位于该第四面。
5.如权利要求 1 所述用于制造封装发光二极管的方法， 其中该固定步 骤中， 是以光硬化树脂将该盖板与该基板相互固定。
6.如权利要求 1 所述用于制造封装发光二极管的方法， 其中该第三面 形成有 凸紋路。
7.如权利要求 1 所述用于制造封装发光二极管的方法， 其中该第四面 形成有 凸紋路。
PCT/CN2010/077171 2010-09-21 2010-09-21 用于制造封装发光二极管的方法 WO2012037720A1 (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020137006583A KR20140003394A (ko) 2010-09-21 2010-09-21 발광 다이오드 패키지를 제조하기 위한 방법
US13/824,894 US9204558B2 (en) 2010-09-21 2010-09-21 Method for manufacturing packaged light emitting diode
PCT/CN2010/077171 WO2012037720A1 (zh) 2010-09-21 2010-09-21 用于制造封装发光二极管的方法
DE112010005894T DE112010005894T5 (de) 2010-09-21 2010-09-21 Herstellungsverfahren für Leuchtdioden mit Gehäuse
JP2013528493A JP2013538461A (ja) 2010-09-21 2010-09-21 パッケージ済み発光ダイオードの作製方法

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US20130192064A1 (en) 2013-08-01

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