WO2012036221A1 - Dispositif d'antenne et dispositif de communication - Google Patents

Dispositif d'antenne et dispositif de communication Download PDF

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Publication number
WO2012036221A1
WO2012036221A1 PCT/JP2011/071043 JP2011071043W WO2012036221A1 WO 2012036221 A1 WO2012036221 A1 WO 2012036221A1 JP 2011071043 W JP2011071043 W JP 2011071043W WO 2012036221 A1 WO2012036221 A1 WO 2012036221A1
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WIPO (PCT)
Prior art keywords
wiring
dielectric substrate
communication
antenna device
coupling electrode
Prior art date
Application number
PCT/JP2011/071043
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English (en)
Japanese (ja)
Inventor
久村　達雄
Original Assignee
ソニーケミカル＆インフォメーションデバイス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2010206931A external-priority patent/JP2012065104A/ja
Priority claimed from JP2010206930A external-priority patent/JP5727177B2/ja
Application filed by ソニーケミカル＆インフォメーションデバイス株式会社 filed Critical ソニーケミカル＆インフォメーションデバイス株式会社
Priority to CN201180044629.0A priority Critical patent/CN103098302B/zh
Priority to KR1020137009169A priority patent/KR20130098361A/ko
Publication of WO2012036221A1 publication Critical patent/WO2012036221A1/fr
Priority to HK13110225.1A priority patent/HK1183166A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop

Definitions

  • the present invention relates to an antenna device that performs information communication by electromagnetic field coupling between a pair of electrodes facing each other at a predetermined communication wavelength, and a communication device in which the antenna device is incorporated.
  • TransferJet (registered trademark) can be achieved by electromagnetic coupling of the corresponding high-frequency couplers at very short distances, and the signal quality depends on the performance of the high-frequency coupler.
  • a high-frequency coupler described in Patent Document 1 has a printed circuit board 201 in which a ground 202 is formed on one surface and a microstrip structure formed on the other surface of the printed circuit board 201.
  • the stub 203 includes a coupling electrode 208 and a metal wire 207 that connects the coupling electrode 208 and the stub 203.
  • a transmission / reception circuit 205 is also formed on the printed circuit board 201.
  • Patent Document 1 as a modified example in which the transmission / reception circuit 205 is not formed on the printed circuit board 201, a printed circuit board 201 in which a ground 202 is formed on one surface as shown in FIG. A configuration including a microstrip structure stub 203 formed on the other surface, a coupling electrode 208, and a metal wire 207 connecting the coupling electrode 208 and the stub 203 is described.
  • the high-frequency coupler described in Patent Document 1 needs to increase the area of the plate-like coupling electrode 208 in order to perform good communication. This is because a certain length depending on the communication wavelength is necessary, and in order to increase the coupling strength, the coupling electrode 208 must be enlarged.
  • the metal wire 207 needs to connect the coupling electrode 208 and the stub 203 at a predetermined position, there is a problem in process such that alignment accuracy is required at the time of manufacture.
  • the present invention has been proposed in view of such circumstances, and an antenna device having a structure advantageous for downsizing of a coupling electrode while realizing both good communication characteristics and mechanical strength can be realized.
  • the purpose is to provide.
  • Another object of the present invention is to provide a communication device in which this antenna device is incorporated.
  • an antenna device is an antenna device that performs information communication by electromagnetic coupling between a pair of electrodes facing each other at a predetermined communication wavelength.
  • a coupling electrode is formed on the substrate and is electromagnetically coupled to an electrode of another antenna device so as to be communicable.
  • the coupling electrode includes a first wiring having a length approximately half the communication wavelength, and a first wiring A conductor electrically connected to the wiring of the first wiring, the central portion of the first wiring and the conductor are formed at positions facing the thickness direction of the dielectric substrate, and the central portion of the first wiring It is characterized in that it is electromagnetically coupled to an electrode of another antenna device arranged on an extension line connecting the conductor and the conductor.
  • the communication device is a communication device that performs information communication by electromagnetic coupling between a pair of electrodes facing each other at a predetermined communication wavelength. And a coupling electrode that is electromagnetically coupled to enable communication, and a transmission / reception processing unit that is electrically connected to the coupling electrode and performs signal transmission / reception processing.
  • the coupling electrode is approximately half the communication wavelength.
  • a conductor electrically connected to the first wiring, and the central portion of the first wiring and the conductor are formed at positions facing the thickness direction of the dielectric substrate. It is characterized in that it is electromagnetically coupled to an electrode of another antenna device arranged on an extension line connecting the central portion of the first wiring and the conductor.
  • a coupling electrode composed of a first wiring having a length approximately half of the communication wavelength and a conductor electrically connected to the first wiring is formed on a dielectric substrate. Therefore, it is possible to realize good mechanical strength and downsizing of the entire antenna device. Further, the present invention is electromagnetically coupled to the electrodes of other antenna devices arranged on the extension line connecting the central portion of the first wiring and the conductor, so that the signal level is high at the central portion of the first wiring. By efficiently releasing the longitudinal wave of the electric field in the thickness direction of the substrate, the strength of the coupling with other coupling electrodes arranged at the opposite position is increased, and good communication characteristics are realized. can do.
  • the present invention makes it possible to achieve both good communication characteristics and mechanical strength, and to reduce the size of the entire apparatus.
  • FIG. 1 is a diagram showing a configuration of a communication system in which an antenna device to which the present invention is applied is incorporated.
  • FIG. 2 is a diagram showing the configuration of the high-frequency coupler according to the first embodiment which is an antenna device to which the present invention is applied.
  • FIG. 3 is a perspective view showing a communication state between the high-frequency couplers in the high-frequency coupler according to the first embodiment.
  • FIG. 4 is an electric field distribution diagram showing a result of electric field analysis in the central cross section of the high frequency coupler according to the first embodiment.
  • FIG. 5 is an electric field distribution diagram showing an electric field analysis result at 1 mm on the electrode surface of the high-frequency coupler according to the first embodiment.
  • FIG. 6 is a frequency characteristic diagram showing the analysis result of the coupling strength between the high frequency coupler and the reference coupler according to the first embodiment.
  • FIG. 7 is a diagram showing a configuration of a high-frequency coupler according to a modification which is an antenna device to which the present invention is applied.
  • FIG. 8 is a frequency characteristic diagram showing an analysis result of the coupling strength between the high frequency coupler and the reference coupler according to the modification.
  • FIG. 9 is a diagram showing a configuration of a high-frequency coupler according to the second embodiment which is an antenna device to which the present invention is applied.
  • FIG. 10 is a perspective view illustrating a communication state between the high-frequency couplers in the high-frequency coupler according to the second embodiment.
  • FIG. 11 is an electric field distribution diagram showing a result of electric field analysis in a central section in the high frequency coupler according to the second embodiment.
  • FIG. 12 is an electric field distribution diagram showing an electric field analysis result at 1 mm on the electrode surface of the high frequency coupler according to the second embodiment.
  • FIG. 13 is a frequency characteristic diagram showing an analysis result of the coupling strength between the high frequency coupler and the reference coupler according to the second embodiment.
  • FIG. 14 is a diagram illustrating a configuration of a high-frequency coupler according to a third embodiment which is an antenna device to which the present invention is applied.
  • FIG. 15 is a diagram illustrating a configuration of a high-frequency coupler according to a third embodiment which is an antenna device to which the present invention is applied.
  • FIG. 16 is a perspective view showing a communication state between the high-frequency couplers in the high-frequency coupler according to the third embodiment.
  • FIG. 17 is a perspective view showing an analysis cross section of the electric field vector in the high frequency coupler according to the third embodiment.
  • FIG. 18 is an electric field distribution diagram showing a result of electric field analysis in the central cross section of the high frequency coupler according to the third embodiment.
  • FIG. 19 is an electric field distribution diagram showing a result of electric field analysis at 1 mm on the electrode surface of the high-frequency coupler according to the third embodiment.
  • FIG. 20 is a frequency characteristic diagram showing an analysis result of the coupling strength between the high frequency coupler and the reference coupler according to the third embodiment.
  • FIG. 21 is a diagram showing a configuration of a high-frequency coupler according to a conventional example.
  • FIG. 22 is a diagram illustrating a configuration of a high-frequency coupler according to a conventional example.
  • An antenna device to which the present invention is applied is a device that performs information communication by electromagnetic coupling between a pair of opposed electrodes, and is a communication system that enables high-speed transfer of about 560 Mbps, for example, as shown in FIG. 100 is used by being incorporated.
  • the communication system 100 includes communication devices 101 and 105 that perform two data communications.
  • the communication apparatus 101 includes a high-frequency coupler 102 having a coupling electrode 103 and a transmission / reception circuit unit 104.
  • the communication device 105 includes a high-frequency coupler 106 having a coupling electrode 107 and a transmission / reception circuit unit 108.
  • the two coupling electrodes 103 and 107 operate as one capacitor, and the band-pass filter as a whole.
  • a high frequency signal in the 4 to 5 GHz band for realizing high-speed transfer of about 560 Mbps can be efficiently transmitted between the two high frequency couplers 102 and 106, for example.
  • the transmitting and receiving coupling electrodes 103 and 107 included in the high-frequency couplers 102 and 106 are arranged to face each other with a spacing of, for example, about 3 cm, and can be electrically coupled.
  • the transmission / reception circuit unit 104 connected to the high-frequency coupler 102 generates a high-frequency transmission signal based on the transmission data when a transmission request is generated from a higher-level application, and the coupling electrode 103 generates a coupling electrode.
  • the signal is propagated to 107.
  • the transmission / reception circuit unit 108 connected to the reception-side high-frequency coupler 106 demodulates and decodes the received high-frequency signal, and passes the reproduced data to the higher-level application.
  • the antenna device to which the present invention is applied is not limited to the above-described one that transmits a high frequency signal in the 4 to 5 GHz band, and can be applied to signal transmission in other frequency bands, but in the following specific examples, A high frequency signal in the 4 to 5 GHz band will be described as a transmission target.
  • the dielectric substrate 11 is shown in a transparent manner for easy understanding of the connection state of the wiring 15.
  • the high frequency coupler 1 has a wiring 15 functioning as a coupling electrode 18 on one surface 11a of a dielectric substrate 11, and a ground 12 formed on the other surface 11b opposite to the surface 11a. It has a structure.
  • connection terminal portion 19 that becomes a connection portion with the transmission / reception circuit portion 104 described above, and the other end of the wiring 15 is connected to the ground 12 via the connection through hole 14.
  • the coupling electrode 18 is formed of a so-called ninety-nine-fold or meander-shaped wiring 15 having a plurality of folded portions, and the wiring length of the wiring 15 is adjusted to be approximately half the communication wavelength. Yes.
  • the coupling electrode 18 having such a configuration has a high signal level at a position that is a quarter of the communication wavelength from the connection terminal portion 19, that is, at the central portion 15 a of the wiring 15.
  • the electric charge in this portion and the mirror image charge on the opposite side via the ground 12 function as an electric dipole. Therefore, the coupling electrode 18 can efficiently emit a longitudinal wave of the electric field in the thickness direction of the substrate, and as a result, the coupling strength between the coupling electrodes disposed at the opposing positions is high. Thus, good communication characteristics can be realized.
  • the high-frequency coupler 1 having such a configuration is manufactured by the following manufacturing process. First, out of a double-sided copper foil substrate in which a copper foil is pasted as a conductive member on both surfaces of the dielectric substrate 11, one surface 11b is used as a ground 12, and a part of the copper foil on the other surface 11a is etched.
  • the coupling electrode 18 composed of the meander-shaped wiring 15 is formed by removing the processing.
  • a hole is formed at one end of the wiring 15 by drilling or laser processing, and the connecting through hole 14 is completed by plating the hole or filling a conductive material such as a conductive paste.
  • the wiring 15 constituting the coupling electrode 18 formed on the surface 11a of the dielectric substrate 11 and the ground 12 of the other surface 11b of the dielectric substrate 11 are electrically connected.
  • the other end of the wiring 15 constituting the coupling electrode 18 that is not connected to the ground 12 becomes the connection terminal portion 19 and is processed into a shape suitable for the connection means with the transmission / reception circuit portion 104 described above.
  • the high frequency coupler 1 is completed.
  • the high-frequency coupler 1 can be manufactured by processing one double-sided copper foil substrate. Since the entire surface of one surface 11b is the ground 12, the wiring 15 and the ground 12 It is not necessary to align the patterns on both sides when connecting the wires, and the connection through holes 14 are provided in contact with one end of the wiring 15 so that they can be easily connected and can be manufactured by a simple process.
  • the high-frequency coupler 1 includes the wiring 15 in which the coupling electrode 18 is formed in a meander shape on the surface 11a facing the surface 11b on which the ground 12 is formed.
  • One end is connected to the transmission / reception circuit portion 104 via the connection terminal portion 19 which is a signal input / output end, and the other end is electrically connected to the ground 12, so that the mechanical strength is good. Therefore, it is possible to reduce the size of the entire high-frequency coupler.
  • the mechanical strength is high on the dielectric substrate 11 without using the metal wire 207 that may be deformed by an external force as compared with the conventional high frequency coupler as shown in FIG. This is because the coupling electrode 18 is mounted. Moreover, the overall size of the high-frequency coupler can be reduced because the coupling strength can be increased by adjusting the length of the wiring 15 without necessarily increasing the area of the electrode.
  • the dielectric substrate 11 As a material for the dielectric substrate 11, glass, a paper base material, or a glass fiber woven fabric is hardened with an epoxy resin, a phenol resin, or the like, for example, a glass epoxy, a glass composite substrate, Dielectric constant polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene, polypropylene, or the like, or a material obtained by making them porous can be used.
  • the dielectric substrate 11 is preferably made of a low dielectric constant material in terms of electrical characteristics.
  • the wiring 15 is formed as the coupling electrode 18 by the etching process using the double-sided substrate on which the copper foil is pasted, but on the surfaces 11 a and 11 b of the dielectric substrate 11. It may be formed by patterning such as direct formation in a masked state by plating, vacuum deposition or the like, or etching after formation.
  • a good conductor such as aluminum, gold, or silver can be used as the material for the wiring 15 of the coupling electrode 18 and the ground 12.
  • the material is not limited to these materials. Any of them can be used.
  • the coupling electrode 18 has the wiring 15 formed in a meander shape, the space of the surface 11a of the dielectric substrate 11 can be used effectively, and the high-frequency coupler 1 itself can be miniaturized. it can.
  • the length of the coupling electrode 18 is approximately 1 ⁇ 2 wavelength of the communication frequency.
  • the formation space of the coupling electrode 18 can be reduced by forming these wirings so as to be dense and dense. This is because the high-frequency coupler can be miniaturized.
  • the wiring pattern of the wiring 15 constituting the coupling electrode 18 may be formed by connecting a plurality of meander-shaped patterns having different shapes from the viewpoint of effectively utilizing the space of the dielectric substrate 11.
  • An L-shaped, arc-shaped repeating pattern or the like may be used.
  • the coupling strength was analyzed using a three-dimensional electromagnetic field simulator HFSS manufactured by Ansoft.
  • HFSS three-dimensional electromagnetic field simulator
  • an analysis model of the high-frequency coupler 1 was used under the following conditions.
  • Polytetrafluoroethylene was set as the material of the dielectric substrate 11
  • copper was set as the material of the conductor of the coupling electrode 18.
  • the size of the high-frequency coupler 1 was 6.5 mm ⁇ 6.5 mm on the surface 11 a on which the wiring pattern is formed, and the substrate thickness was 1.67 mm.
  • the coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high frequency transmission characteristic, and the connection port portion 19 serving as the signal input / output end of the high frequency coupler 1 and the ground 12 are used as an input port.
  • the coupling strength S21 between the ports of the pair of high frequency couplers was calculated.
  • FIG. 3 shows the relative arrangement between the high-frequency couplers used for the analysis of the coupling strength S21.
  • the coupling strength of the wiring 15 constituting the coupling electrode 18 of the high-frequency coupler 1 and the electrode 150a of the high-frequency coupler 150 are opposed to each other so that the central axes thereof coincide with each other and are spaced by 15 mm and 100 mm.
  • the frequency characteristic of S21 was examined.
  • one high frequency coupler 150 has a plate-like electrode 150a, and a reference high frequency coupler which is a reference machine for evaluation is used.
  • FIG. 4 is an analysis of the electric field distribution at 4.5 GHz of the high-frequency coupler 1, and shows the electric field distribution in a cross section obtained by dividing the dotted line Y-Y ′ in FIG. 2 in the thickness direction.
  • a strong electric field distribution is observed between the coupling electrode 18 and the ground 12, and an electric field is distributed on the arc from the central portion 15a of the wiring 15 constituting the coupling electrode 18 outward. ing.
  • FIG. 5 shows the electric field distribution on a surface 1 mm away vertically from the surface 11 a where the coupling electrode 18 is formed in the high-frequency coupler 1. As apparent from FIG. 5, the electric field is distributed substantially concentrically from the central portion 15 a of the wiring 15 constituting the coupling electrode 18.
  • the length of the wiring 15 constituting the coupling electrode 18 is approximately half of the communication wavelength, and one end of the wiring 15 is connected to the ground 12, which is a so-called short stub. This is because the electric field is maximized at the central portion 15a corresponding to the / 4 portion.
  • a strong electric field is generated around the central portion 15a of the coupling electrode 18.
  • FIG. 6 shows the analysis result of the coupling strength S21 between the high-frequency coupler 1 and the reference high-frequency coupler 150, and the coupling strength of ⁇ 22.5 dB is around 4.5 GHz at a communication distance of 15 mm facing.
  • a wide band characteristic of 0.69 GHz was obtained in the ⁇ 3 dB bandwidth, which is a frequency band that has a 3 dB attenuation from the maximum intensity.
  • TransferJet registered trademark
  • the center frequency shifts due to variations in high frequency couplers and impedance matching with the circuit board. Since the bandwidth is sufficiently wide, good communication can be performed without being affected by these variations.
  • a communication cutoff of ⁇ 48 dB or less is obtained at a non-communication distance of 100 mm facing distance.
  • the high-frequency coupler 1 As described above, in the high-frequency coupler 1 according to the first embodiment, as is apparent from the above-described simulation, it is possible to realize good communication characteristics and further achieve both mechanical strength and the device. The overall size can be reduced.
  • FIG. 7 shows the dielectric substrate 21 in a transparent state for easy understanding of the connection state of the wiring 25.
  • a wiring 25 functioning as a coupling electrode 28 and a stub 27 connected to the wiring 25 are formed on one surface 21a of the dielectric substrate 21, and the surface 21a.
  • the ground 22 is formed on the other surface 21b facing the surface.
  • one end of the wiring 25 serves as a connection terminal portion 29 to be a connection portion with the transmission / reception circuit portion 104, and the other end of the wiring 25 is connected to the ground 22 through the connection through hole 24a. Is done.
  • the coupling electrode 28 is formed by a wiring 25 having a plurality of folded portions, a ninety-nine fold shape, or a meander shape, and the wiring length of the wiring 25 is adjusted to be approximately half the communication wavelength. .
  • the signal level is high at a position that is a quarter of the communication wavelength from the connection terminal portion 29, that is, at the central portion 25 a of the wiring 25.
  • the electric charge in this portion and the mirror image charge on the opposite side via the ground 22 function as an electric dipole. Therefore, the coupling electrode 28 can efficiently emit a longitudinal wave of the electric field in the thickness direction of the substrate, and as a result, the coupling strength between the coupling electrode disposed at the opposite position is high. Thus, good communication characteristics can be realized.
  • One end of the stub 27 is connected to the coupling electrode 28 at the connection terminal portion 29, and the other end is connected to the ground 22 via the connection through hole 24b. Further, by using a stub 27 whose length is adjusted, when the coupling electrode 28 is electromagnetically coupled to another electrode, the coupling strength and the bandwidth can satisfy desired conditions. it can.
  • the high frequency coupler 2 having such a configuration is manufactured by the following manufacturing process. First, out of a double-sided copper foil substrate in which, for example, a copper foil is pasted as a conductive member on both surfaces of the dielectric substrate 21, one surface 21b is used as a ground 22 and a part of the copper foil on the other surface 21a is etched.
  • the coupling electrode 28 composed of the meander-shaped wiring 25 and the stub 27 are formed by removing the processing.
  • holes are formed in one end of the wiring 25 and one end of the stub 27 by drilling or laser processing, and each hole is plated or filled with a conductive material such as a conductive paste to connect through holes.
  • the holes 24a and 24b are completed.
  • the wiring 25 constituting the coupling electrode 28 formed on the surface 21a of the dielectric substrate 21 and the ground 22 of the other surface 21b of the dielectric substrate 21 are electrically connected.
  • the stub 27 and the ground 22 are electrically connected.
  • the other end of the wiring 25 constituting the coupling electrode 28 that is not connected to the ground 22 becomes a connection terminal portion 29 connected to the stub 27, which is suitable for the connection means with the transmission / reception circuit portion 104 described above.
  • the high frequency coupler is completed by processing into the shape to be performed.
  • the high-frequency coupler 2 can be manufactured by processing the single-sided double-sided copper foil substrate with the coupling electrode 28, and the entire surface of the one surface 21 b serves as the ground 22.
  • the ground 22 it is not necessary to align the patterns on both sides, and contact one end of the wiring constituting the coupling electrode 28 and one end of the stub 27.
  • 24b it can connect easily and can be produced by a simple process.
  • the coupling strength was analyzed using a three-dimensional electromagnetic field simulator HFSS manufactured by Ansoft.
  • HFSS three-dimensional electromagnetic field simulator
  • an analysis model of the high frequency coupler 2 was used under the following conditions.
  • Polytetrafluoroethylene was set as the material of the dielectric substrate 21, and copper was set as the material of the conductor used as the coupling electrode 28 and the stub 27.
  • the size of the high-frequency coupler 2 is such that the surface 21a on which the wiring pattern is formed is 6.5 mm ⁇ 6.5 mm, the substrate thickness is 1.67 mm, and the length of the stub 27 is 5.2 mm. .
  • the coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high-frequency transmission characteristic, and the connection port portion 29 serving as the signal input / output terminal of the high-frequency coupler 2 and the ground 22 are used as an input port.
  • the coupling strength S21 between the ports of the pair of high frequency couplers was calculated.
  • the relative arrangement between the high-frequency couplers used in the analysis is the same as the condition shown in FIG.
  • FIG. 8 shows the analysis result of the frequency characteristics of the coupling strength S21 when the facing distance between the high frequency couplers is 15 mm.
  • the coupling strength when the facing distance is 15 mm shown in FIG. 6, which is a characteristic of the high-frequency coupler 1 having no stub 27, is also shown.
  • the reference high-frequency coupler 150 which is a reference machine for evaluation, is used as one high-frequency coupler.
  • the coupling strength can be increased, but the frequency band in which strong coupling strength is obtained is narrow.
  • the strength of the coupling strength and the ⁇ 3 dB bandwidth are in a trade-off relationship. Therefore, when these balances are insufficient for the required specifications, a stub 27 is provided as in the high-frequency coupler 2 to By changing the length, the balance between the two can be adjusted.
  • a high frequency coupler 3 according to the second embodiment as shown in FIG. 9 will be described as an antenna device incorporated in the communication system 100.
  • the dielectric substrate 31 is shown in a transparent manner for easy understanding of the connection state of the wirings 32a and 32b.
  • the high-frequency coupler 3 includes wirings 32 a and 32 b having a plurality of folded portions on the upper and lower surfaces 31 a and 31 b of the dielectric substrate 31, so-called ninety-nine folded shapes or meander-shaped wires 32 a and 32 b, respectively.
  • the structure is formed.
  • One end of each of the meander-shaped wirings 32 a and 32 b is electrically connected through a connection through hole 34 a formed in the thickness direction of the dielectric substrate 31, and the other antenna device disposed at an opposing position. It functions as a coupling electrode 38 that is electromagnetically coupled to the electrode and can communicate.
  • the coupling electrode 38 includes an end 39a of the wiring 32a that is not connected to the connection through hole 34a and the other end of the wiring 32b that is not connected to the connection through hole 34a.
  • a connecting terminal portion 39 is formed on the same surface 31b.
  • the connecting terminal portion 39 includes an end 39b extending to the surface 31b.
  • connection terminal portion 39 is a terminal for connection with the transmission / reception circuit portion 104 described above, and is, for example, a connection with a flexible printed board via an anisotropic conductive film, or a thin coaxial cable via a surface mount receptacle. It becomes connection means such as connection. For this reason, the shape of the connection terminal portion 39 is adjusted. Depending on the connection method, the connection through-hole 34b is omitted, and the end portions 39a and 39b are arranged on both surfaces of the dielectric substrate 31, respectively. The configuration described above may be adopted.
  • the coupling electrode 38 is configured by connecting meander-shaped wirings 32a and 32b formed on both surfaces of the dielectric substrate 31, and is a wiring length connecting the wirings 32a and 32b, that is, a coupling electrode.
  • the length of 38 is adjusted to be approximately one wavelength of the communication frequency.
  • the coupling electrode 38 is opposed to the end of the wirings 32a and 32b that are not connected to the connection through hole 34a at a position that is 1/4 of the communication wavelength with the dielectric substrate 31 in between. ing.
  • the positions apart from the end portions 39a and 39b of the wirings 32a and 32b that are not connected to the connection through hole 34a by a quarter of the communication wavelength are the center portions of the surfaces 31a and 31b, respectively. 35a and 35b.
  • the coupling electrode 38 As is apparent from the following evaluation, the center is separated from the end portions 39a, 39b of the wirings 32a, 32b not connected to the connection through hole 34a by 1/4 of the communication wavelength. Since the portions 35a and 35b are opposed to each other with the dielectric substrate 31 in between, the polarities are opposite and the signal levels are high at these opposed positions, and function as an electric dipole. Therefore, the coupling electrode 38 can efficiently emit a longitudinal wave of an electric field in the thickness direction of the substrate, and as a result, the coupling strength between the coupling electrodes disposed at the opposing positions is high. Thus, good communication characteristics can be realized.
  • the high-frequency coupler 3 having such a configuration is manufactured by the following manufacturing process. First, with respect to the double-sided copper foil substrate in which copper foil is pasted as a conductive layer on both surfaces of the dielectric substrate 31, a part of the copper foil is removed by etching treatment, and a meander-shaped wiring 32a having a plurality of folded portions, 32b is formed. Next, holes are formed by drilling or laser processing in one end of the wiring 32a, a portion where the one end of the wiring 32b overlaps, and the other end of the wiring 32b, respectively, and the holes are plated or conductive such as conductive paste. By filling the conductive material, the connection through holes 34a and 34b are completed.
  • the wiring 32a formed on the surface 31a of the dielectric substrate 31 and the wiring 32b on the other surface 31b are electrically connected to function as the coupling electrode 38, and both ends of the coupling electrode 38 are connected.
  • the portions 39 a and 39 b function as the connection terminal portion 39.
  • the high-frequency coupler 3 is good because the coupling electrode 38 is connected to the ends of the wirings 32a and 32b formed on both surfaces of the dielectric substrate 31 through the connection through holes 34a. Mechanical strength and downsizing of the entire high-frequency coupler 3 can be realized. In addition, the high-frequency coupler 3 can be easily manufactured by patterning a single double-sided copper foil substrate by the above process.
  • the mechanical strength is high on the dielectric substrate 31 without using the metal wire 207 that may be deformed by an external force as compared with the high frequency coupler according to the conventional example as shown in FIG. This is because the coupling electrode 38 is mounted. Moreover, the overall size of the high-frequency coupler can be reduced because the coupling strength can be increased by adjusting the length of the wiring 35 without necessarily increasing the area of the electrode.
  • the dielectric substrate 31 As a material of the dielectric substrate 31, glass, a paper base material, or a glass fiber woven fabric is hardened with an epoxy resin, a phenol resin, etc. Dielectric constant polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene, polypropylene, or the like, or a material obtained by making them porous can be used.
  • the dielectric substrate 31 is preferably made of a low dielectric constant material in terms of electrical characteristics.
  • the wirings 32a and 32b are formed by etching using a double-sided substrate on which a copper foil is attached.
  • both surfaces 31a and 31b of the dielectric substrate 31 are plated.
  • it may be formed directly by a masking state by a vacuum deposition method or by performing a patterning process such as etching after the formation.
  • a good conductor such as aluminum, gold, or silver can be used as a material for the wirings 32a and 32b.
  • the material is not limited to these materials, and any conductor having high conductivity can be used. be able to.
  • the coupling electrode 38 has the wirings 32a and 32b formed in a meander shape having a plurality of folded portions, the space of each surface 31a and 31b of the dielectric substrate 31 can be effectively utilized.
  • the coupling electrode 38 itself can be reduced in size.
  • the length of the coupling electrode 38 is approximately one wavelength of the communication frequency.
  • the formation space of the coupling electrode 38 can be reduced by forming these wirings so as to be closely packed. This is because the area of the high-frequency coupler 3 can be reduced.
  • the wiring patterns of the wirings 32a and 32b in the coupling electrode 38 are formed by connecting a plurality of meander-shaped patterns having folded portions having different shapes from the viewpoint of effectively using the space of the dielectric substrate 31.
  • an L-shaped or arc-shaped repetitive pattern may be used.
  • the coupling strength was analyzed using a three-dimensional electromagnetic field simulator HFSS manufactured by Ansoft.
  • HFSS three-dimensional electromagnetic field simulator
  • an analysis model of the high frequency coupler 3 was used under the following conditions. That is, polytetrafluoroethylene was set as the material of the dielectric substrate 31, and copper was set as the conductive material of the coupling electrode 38.
  • the size of the high-frequency coupler 3 was 6.5 mm ⁇ 6.5 mm on the surface on which the wiring pattern was formed, and the substrate thickness was 1.67 mm.
  • the coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high frequency transmission characteristic, and the input port is connected between both end portions 39a and 39b of the connection terminal portion 39 which is the signal input / output end of the high frequency coupler.
  • the coupling strength S21 between the ports of the pair of high frequency couplers was calculated.
  • FIG. 10 shows the relative arrangement between the high-frequency couplers 3 and 150 used for the analysis of the coupling strength S21.
  • the coupling strength S21 is set in a state in which the wiring 32a of the coupling electrode 38 of the high-frequency coupler 3 and the electrode 150a of the high-frequency coupler 150 are opposed to each other so that the central axes thereof coincide with each other and are spaced by 15 mm and 100 mm.
  • the frequency characteristics were investigated.
  • one high frequency coupler 150 has a plate-like electrode 150a, and a reference high frequency coupler which is a reference machine for evaluation is used.
  • FIG. 11 is an analysis of the electric field distribution at 4.5 GHz of the high-frequency coupler 3, and shows the electric field distribution in a cross section obtained by dividing the dotted line Y-Y ′ in FIG. 9 in the thickness direction.
  • a strong electric field distribution is observed between the meander-shaped wirings 32 a and 32 b on both surfaces 31 a and 31 b of the dielectric substrate 31 constituting the coupling electrode 38, and the outer side from the coupling electrode 38.
  • An electric field is distributed on the circular arc toward.
  • FIG. 12 shows an electric field distribution on a surface 1 mm away from the surface 31a on which the wiring 32a of the high-frequency coupler 3 is formed in the vertical direction.
  • the electric field is distributed substantially concentrically from the central portions 35a and 35b of the coupling electrode 38. For this reason, a longitudinal wave of a strong electric field is radiated in the thickness direction of the high-frequency coupler 3 during resonance.
  • the length of the coupling electrode 38 is approximately one wavelength, and therefore there is a potential difference between the end portion of the coupling electrode 38 and the central portion 35a of the wiring 32a that corresponds to the portion of the wavelength 1 ⁇ 4. Because it becomes the maximum. As described above, it was confirmed by analysis that the high frequency coupler 3 generates a strong electric field around the center of the substrate surface.
  • FIG. 13 shows an analysis result of the coupling strength S21 between the high-frequency coupler 3 and the reference high-frequency coupler 150, and has a coupling strength of ⁇ 25 dB around 4.5 GHz at a communication distance of 15 mm facing,
  • a broadband characteristic of 0.86 GHz was obtained in the -3 dB bandwidth, which is a frequency band showing an intensity attenuated by 3 dB from the maximum intensity.
  • TransferJet registered trademark
  • the center frequency shifts due to variations in high-frequency couplers and impedance matching with the circuit board. Since the bandwidth is 1.5 times, good communication can be performed without being affected by these variations.
  • a communication interruption of -60 dB or less is obtained at a non-communication distance with a facing distance of 100 mm.
  • the high-frequency coupler 3 according to the second embodiment As described above, in the high-frequency coupler 3 according to the second embodiment, as is apparent from the above simulation, it is possible to realize good communication characteristics and further achieve coexistence with mechanical strength.
  • the entire apparatus can be reduced in size.
  • a high-frequency coupler 4 according to a third embodiment as shown in FIGS. 14 and 15 will be described as an antenna device incorporated in the communication system 100.
  • FIGS. 14 and 15 show the high-frequency coupler 4 from different viewpoints, and show the winding state of the coil 48 described later through the dielectric substrates 41, 42a, and 42b for easy understanding. .
  • the high-frequency coupler 4 includes dielectric substrates 41, 42 a, 42 b and a coil 48 having a length substantially equal to the communication wavelength, and a circuit substrate and a circuit board at both ends of the coil 48.
  • a connection terminal portion 49 is formed for connection.
  • the dielectric substrates 42a and 42b are dielectric members that are laminated on both surfaces of the dielectric substrate 41 by, for example, a bonding process described later.
  • the dielectric substrates 41, 42a, and 42b are made of glass, paper base material, or glass fiber woven fabric hardened with epoxy resin, phenol resin, or the like, such as glass epoxy, glass composite substrate, or low dielectric. Rate polyimide, liquid crystal polymer, polytetrafluoroethylene, polystyrene, polyethylene, polypropylene, and the like, and materials obtained by making them porous.
  • the dielectric substrates 41, 42a, and 42b are preferably made of a low dielectric constant material from the viewpoint of electrical characteristics.
  • connection terminal portion 49 is a terminal for connection with the transmission / reception circuit portion 104 described above.
  • the connection terminal portion 49 is connected with a flexible printed board via an anisotropic conductive film, or a thin coaxial cable via a surface mount receptacle. It becomes connection means such as connection. For this reason, the shape of the connection terminal portion 49 is adjusted.
  • a connection through hole 45a described later is omitted, and the terminals are arranged on both surfaces of the dielectric substrate 41, respectively. May be adopted.
  • the coil 48 functions as a coupling electrode that is electromagnetically coupled to electrodes of other antenna devices arranged at opposing positions so as to be communicable.
  • the coil 48 is configured by connecting an upper surface coil 47a and a lower surface coil 47b, which will be described later, and the wiring length connecting the upper surface coil 47a and the lower surface coil 47b, that is, the length of the coil 48 is the communication frequency. It is adjusted to be approximately one wavelength.
  • the coil 48 has a dielectric substrate at a position away from the connection terminal portion 49 that is an end portion of the upper surface coil 47a and the lower surface coil 47b that are not connected to the connection through-hole 45b described later. 41, 42a and 42b are opposed to each other.
  • the positions of 1/4 of the communication wavelength from the two ends of the connection terminal portion 49 are the central portions 46a and 46b of the dielectric substrates 41, 42a and 42b, respectively.
  • the high-frequency coupler 4 having such a configuration is manufactured by the following manufacturing process.
  • a plurality of upper surface lines 43a and lower surface lines 43b made of a conductive metal such as copper or aluminum are formed on both surfaces of the dielectric substrate 42a, one end of the upper surface line 43a is one end of the lower surface line 43b, and the upper surface line 43a.
  • the other end of each of the adjacent lower surface lines 43b and the other lower surface line 43b are sequentially overlapped with the dielectric substrate 42a interposed therebetween.
  • the plurality of upper surface lines 43a and lower surface lines 43b may be formed by plating, vapor deposition or the like on both surfaces of the dielectric substrate 42a, or etching is performed using the dielectric substrate 42a covered with double-sided copper foil. It may be formed by processing.
  • a plurality of through holes 44 are formed by a drill, a laser, or the like at a position where the upper surface line 43a and the lower surface line 43b overlap the dielectric substrate 42a on which the upper surface line 43a and the lower surface line 43b are formed.
  • By filling these through holes 44 with a metal plating process or a conductive paste all the upper surface lines 43a and lower surface lines 43b formed on both surfaces of the dielectric substrate 42a are electrically connected through the through holes 44, and solenoids A shaped upper surface coil 47a is completed.
  • the lower surface coil 47b is formed on the dielectric substrate 42b. Note that one end of the upper surface coil 47a is also connected to one of the connection terminal portions 49 through the through hole 44 in the above process.
  • through holes 45 a and 45 b for connection are formed in the dielectric substrate 41. This is formed by embedding a metal plating process or a conductive paste or a metal rod in a portion opened by a drill or a laser. Then, the dielectric substrate 42a is bonded to both surfaces of the dielectric substrate 41 so that one end of the upper surface coil 47a overlaps the connection through hole 45b, and one end of the lower surface coil 47b is connected to the connection through hole 45b and the lower surface coil 47b. Bonding and electrical connection are made so that one end overlaps the connecting through hole 45a. As a result, all the metal portions are connected, and one coil 48 having the connection terminal portions 49 at both ends is formed in the dielectric substrates 41, 42a and 42b.
  • the substrates can be bonded to each other depending on the material of the dielectric substrate, but it is preferable to use an adhesive from the viewpoint of preventing deformation and the like. If both ends of the connection through holes 45a and 45b that require electrical connection are convex with respect to the dielectric substrate 41, the adhesive is securely connected to the upper surface coil 47a and the lower surface coil 47b through the adhesive. be able to. Furthermore, in order to ensure the connection, it is preferable to omit an adhesive around the connection portion or use an anisotropic conductive film containing anisotropic conductive particles.
  • the following method may be used for connection between the upper surface coil 47a formed on the dielectric substrate 42a and the lower surface coil 47b formed on the dielectric substrate 42b.
  • the dielectric substrate 42a on which the upper surface coil 47a is formed and the dielectric substrate 42b on which the lower surface coil 47b is formed are attached to both surfaces of the dielectric substrate 41 with an adhesive or the like.
  • holes are formed on both ends of the upper surface coil 47a and the lower surface coil 47b by a drill or the like, one end of the upper surface coil 47a and the lower surface coil 47b is connected by a connection through hole 45b, and the other end of the lower surface coil 47b is connected through.
  • the coil 48 can be formed by connecting to the connection terminal portion 49 that has been prepared in advance when the upper surface line 43a is formed in the hole 45a.
  • the coil 48 functions as a coupling electrode that can be electromagnetically coupled to and communicate with electrodes of other antenna devices disposed at opposing positions.
  • the coil 48 is wound around the upper and lower surfaces of the dielectric substrates 42a and 42b laminated on both surfaces of the dielectric substrate 41 in a coil shape via the through holes 44, and the dielectric substrates 42a and 42b Since one end of the wiring wound on both surfaces is connected through the connection through hole 45b, it is possible to realize good mechanical strength and downsizing of the entire high-frequency coupler 1.
  • the mechanical strength is high on the dielectric substrate 41 without using the metal wire 207 that may be deformed by an external force as compared with the high frequency coupler according to the conventional example as shown in FIG. This is because the coil 48 that functions as a coupling electrode is mounted. Further, the overall size of the high-frequency coupler can be reduced because the coupling strength can be increased by adjusting the overall length of the coil 48 without necessarily increasing the electrode area.
  • the coupling strength was analyzed using a 3D electromagnetic field simulator HFSS manufactured by Ansoft.
  • HFSS 3D electromagnetic field simulator
  • the following condition was used as the dielectric material. That is, as the dielectric material, polytetrafluoroethylene is set for the dielectric substrate 41, and liquid crystal polymer is set for the dielectric substrates 42a and 42b.
  • the coil 48 was made of copper.
  • the size of the high frequency coupler 4 was 6.5 mm ⁇ 6.5 mm on the surface on which the wiring pattern was formed, and the substrate thickness was 2 mm.
  • the coupling strength is evaluated by the transmission characteristic S21 of the S parameter used for evaluating the high frequency transmission characteristic, and the power input port is between both ends of the connection terminal portion 49 which is the signal input / output end of the high frequency coupler.
  • FIG. 16 shows a relative arrangement between the high-frequency couplers using the coupling strength S21 for analysis.
  • the frequency characteristic of the coupling strength S21 is examined in a state where the upper surface coil 47a of the high-frequency coupler 4 and the electrode 150a of the high-frequency coupler 150 are opposed to each other so that the central axes thereof are 15 mm and 100 mm apart. It was.
  • one high frequency coupler 150 has a plate-like electrode 150a, and a reference high frequency coupler which is a reference machine for evaluation is used.
  • FIG. 17 shows an analysis portion of the electric field vector distribution, which passes through the portion indicated by the dotted line XX ′ in FIG.
  • the plane extending in the Z axis, which is the thickness direction, is the analysis plane.
  • a direction from the center toward the connection terminal portion 49 with respect to the rectangular parallelepiped high-frequency coupler 4 is a Y axis that is a length direction.
  • FIG. 18 and 19 show the analysis results of the electric field vector distribution at 4.5 GHz which is the resonance frequency of the high-frequency coupler 4 on the YZ plane and the XY plane, respectively.
  • FIG. 19 shows the electric field distribution on a surface 1 mm away in the vertical direction from the surface on which the upper surface coil 47 a of the high-frequency coupler 4 is formed.
  • electrodes having different polarities are formed on the upper surface coil 47a and the lower surface coil 47b, and a strong electric field distribution is generated therebetween. For this reason, a longitudinal wave of a strong electric field at the time of resonance is radiated in the Z-axis direction that is the thickness direction of the high-frequency coupler 4.
  • FIG. 20 shows an analysis result of the coupling strength S21 between the high-frequency coupler 4 and the reference high-frequency coupler 150, and has a coupling strength of ⁇ 25 dB at around 4.5 GHz at a communication distance of 15 mm facing,
  • a wide band characteristic of 1.1 GHz or more was obtained.
  • TransferJet registered trademark
  • the center frequency shifts due to variations in high frequency couplers and impedance matching with the circuit board. Since the bandwidth is doubled, good communication can be performed without being affected by these variations.
  • a communication blocking property of ⁇ 47 dB or less is obtained at a non-communication distance of an opposing distance of 100 mm.
  • the high-frequency coupler 4 according to the third embodiment As described above, in the high-frequency coupler 4 according to the third embodiment, as is clear from the above-described simulation, it is possible to realize good communication characteristics and further achieve coexistence with mechanical strength.
  • the entire apparatus can be reduced in size.
  • the high-frequency coupler according to the first to third embodiments described above includes a first wiring having a length that is approximately half the communication wavelength and a conductor that is electrically connected to the first wiring. Since the coupling electrode is formed on the dielectric substrate, it is possible to achieve good mechanical strength and downsizing of the entire antenna device.
  • the high frequency coupler according to the first to third embodiments described above is electromagnetically coupled to the electrodes of other antenna devices arranged on the extension line connecting the central portion of the first wiring and the conductor.
  • the high-frequency couplers according to the first to third embodiments to which the present invention is applied can realize both good communication characteristics and mechanical strength, and reduce the overall size of the apparatus. be able to.

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  • Details Of Aerials (AREA)
  • Waveguide Connection Structure (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguides (AREA)

Abstract

L'invention concerne un dispositif d'antenne pouvant posséder à la fois des caractéristiques de communication et une résistance mécanique excellentes, et présenter une construction utilisable pour la miniaturisation d'électrodes de couplage. Le dispositif d'antenne présente une construction dans laquelle une électrode de couplage (18) comprend: un substrat diélectrique (11) avec terre (12) formée sur une face de la couche diélectrique; et un câblage (15) formé sur la face du substrat diélectrique (11), à l'opposé de la face accueillant la terre (12). L'électrode de couplage (18) acquiert une capacité de communication par couplage électromagnétique à une électrode d'un autre dispositif d'antenne placé en face du dispositif d'antenne. L'électrode de couplage (18) comprend une pluralité de sections de pliage, ainsi que ledit câblage (15) dont une longueur représente sensiblement la moitié de la longueur d'onde de communication. Une borne de raccordement (19) constituant une borne d'entrée-sortie de signaux est ménagée à une section d'extrémité du câblage (15), l'autre section d'extrémité étant reliée électriquement à la terre (12).
PCT/JP2011/071043 2010-09-15 2011-09-14 Dispositif d'antenne et dispositif de communication WO2012036221A1 (fr)

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CN201180044629.0A CN103098302B (zh) 2010-09-15 2011-09-14 天线装置及通信装置
KR1020137009169A KR20130098361A (ko) 2010-09-15 2011-09-14 안테나 장치 및 통신 장치
HK13110225.1A HK1183166A1 (zh) 2010-09-15 2013-09-02 天線裝置及通信裝置

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JP2010206931A JP2012065104A (ja) 2010-09-15 2010-09-15 アンテナ装置、及び、通信装置
JP2010-206930 2010-09-15
JP2010206930A JP5727177B2 (ja) 2010-09-15 2010-09-15 アンテナ装置、及び、通信装置
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JP6978969B2 (ja) * 2018-03-23 2021-12-08 Fdk株式会社 アンテナ装置
CN111129746A (zh) * 2018-10-30 2020-05-08 富士康(昆山)电脑接插件有限公司 电子设备及其制作方法
CN111129673B (zh) * 2018-11-01 2021-02-12 西安邮电大学 基于lcp工艺的超宽带带通滤波器
CN113519091B (zh) * 2019-03-04 2022-10-25 株式会社村田制作所 通信装置

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CN103098302A (zh) 2013-05-08
CN103098302B (zh) 2016-01-27

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