WO2012029381A1 - Élément électroluminescent et son procédé de production, procédé de production d'un dispositif électroluminescent, dispositif d'éclairage, rétroéclairage, dispositif d'affichage et diode - Google Patents

Élément électroluminescent et son procédé de production, procédé de production d'un dispositif électroluminescent, dispositif d'éclairage, rétroéclairage, dispositif d'affichage et diode Download PDF

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WO2012029381A1
WO2012029381A1 PCT/JP2011/064231 JP2011064231W WO2012029381A1 WO 2012029381 A1 WO2012029381 A1 WO 2012029381A1 JP 2011064231 W JP2011064231 W JP 2011064231W WO 2012029381 A1 WO2012029381 A1 WO 2012029381A1
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Prior art keywords
light emitting
semiconductor
semiconductor layer
substrate
diode
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PCT/JP2011/064231
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English (en)
Japanese (ja)
Inventor
柴田　晃秀
哲 根岸
健治 小宮
善史 矢追
竹史 塩見
岩田　浩
高橋　明
Original Assignee
シャープ株式会社
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Priority claimed from JP2010208023A external-priority patent/JP2012064772A/ja
Priority claimed from JP2011122176A external-priority patent/JP4927223B2/ja
Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to US13/820,081 priority Critical patent/US9190590B2/en
Priority to KR1020157021465A priority patent/KR20150098246A/ko
Priority to KR1020137007755A priority patent/KR20130093115A/ko
Priority to CN201180052596.4A priority patent/CN103190004B/zh
Publication of WO2012029381A1 publication Critical patent/WO2012029381A1/fr

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    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Definitions

  • the present invention relates to a light emitting element having a protruding semiconductor such as a rod or plate, a method for manufacturing the same, a method for manufacturing a light emitting device including the light emitting element, and an illumination device, a backlight, and a display device including the light emitting device. And a diode constituting a light emitting diode or a photoelectric conversion element.
  • Patent Document 1 Japanese Patent Laid-Open No. 2006-332650.
  • a first polar layer 910 is formed on a substrate 900, and a plurality of rods 920 made of an active layer that emits light is formed on the first polar layer 910.
  • the rod 920 is further encapsulated in a second polar layer 930, and the plurality of rods 920 and the second polar layer 930 made of the active layer constitute a rod-type light emitting element.
  • each rod 920 emits light to the entire surface, the light emitting area is increased and the amount of light by the light emitting element is increased.
  • the rod 920 is formed of an active layer, and the active layer has a role of exclusively confining carriers to increase the light emission efficiency, and generally has a high resistance.
  • the active layer having a high resistance becomes longer, and a sufficient current can flow to the tip. There was a problem that the tip end portion became dark without being able to be obtained and sufficient light emission intensity could not be obtained.
  • Non-Patent Document 1 a core 3001 made of n-type GaN and an InGaN layer 3002, an i-GaN layer 3003, a p-AlGaN layer 3004, and a p-GaN layer 3005 are sequentially shelled so as to cover the periphery of the core 3001. It is formed in a shape.
  • the InGaN layer 3002 and the i-GaN layer 3003 constitute an active layer.
  • the n-type core 3001 is used as an n-type electrode, and the material is selected with priority given to the function of the n-type electrode. Is limited. For this reason, it is difficult to freely select the material of the core 3001 to give the core desired characteristics, and this causes an increase in manufacturing cost and a decrease in manufacturing yield for giving the core desired characteristics. It was.
  • an object of the present invention is to provide a light emitting element that can obtain a sufficient light emission intensity with low resistance.
  • the present invention further provides a method for manufacturing such a light-emitting element, a method for manufacturing a light-emitting device using such a light-emitting element, a lighting device including such a light-emitting device, a backlight, and a display device. There is.
  • Another object of the present invention is to provide a diode that can have desired characteristics in the core without causing an increase in manufacturing cost or a decrease in manufacturing yield.
  • a light emitting device of the present invention includes a first conductivity type semiconductor base, A plurality of first-conductivity-type protruding semiconductors formed on the first-conductivity-type semiconductor base; And a semiconductor layer of a second conductivity type covering the protruding semiconductor.
  • the second conductive type semiconductor layer is formed so as to cover the first conductive type protruding semiconductor, almost all side surfaces of the protruding semiconductor can be made to emit light. It becomes. Therefore, according to the light emitting device of the present invention, the light emission amount per unit area of the first conductivity type semiconductor base can be increased as compared with a light emitting diode chip having a planar light emitting layer.
  • the protruding semiconductor is made of a first conductivity type semiconductor
  • the resistance can be easily reduced by increasing the amount of impurities that give the first conductivity type to the protruding semiconductor. Therefore, even if the length of the protruding semiconductor is increased, an increase in the resistance of the protruding semiconductor is suppressed, and light can be emitted uniformly from the root portion to the tip portion of the protruding semiconductor. Therefore, it is possible to further increase the light emission amount per unit area of the first conductivity type semiconductor base.
  • the first conductive type protruding semiconductor is a first conductive type rod-shaped semiconductor.
  • a planar light emitting layer is provided. Compared with the light emitting diode chip, the light emission amount per unit area of the semiconductor base of the first conductivity type can be increased.
  • the length of the first conductivity type rod-shaped semiconductor is 10 times or more the thickness of the first conductivity type rod-shaped semiconductor.
  • the light emission amount per unit area of the semiconductor base can be remarkably increased.
  • the rod-shaped semiconductor is made of an active layer as in the prior art, it is difficult to emit light at the tip if the length of the rod-shaped semiconductor is 10 times or more the thickness. Therefore, when the length of the rod-shaped semiconductor is 10 times or more of the thickness, the advantage of the present invention that the light emission intensity is high with low resistance becomes particularly remarkable.
  • the first conductive type protruding semiconductor is a first conductive type semiconductor plate.
  • the projecting semiconductor is a plate semiconductor
  • the widest light emission surface of the plate semiconductor is a nonpolar surface, so that the overall light emission efficiency can be increased.
  • an active layer is formed between the first conductive type protruding semiconductor and the second conductive type semiconductor layer.
  • the luminous efficiency can be increased. Further, since the active layer is formed to be relatively thin between the first conductive type protruding semiconductor and the second conductive type semiconductor layer, the luminous efficiency is high. This is because the active layer is for confining bipolar carriers (holes and electrons) in a narrow range to increase the recombination probability. On the other hand, when all of the first conductive type rod-shaped semiconductor portion is made of an active layer as in the prior art, the light emission efficiency is not high because of insufficient carrier confinement.
  • a transparent electrode layer is formed on the second conductivity type semiconductor layer.
  • a transparent member made of a material having higher transparency than the transparent electrode layer in a facing gap where the transparent electrode layer is opposed between the plurality of first conductive type protruding semiconductors. Is filled.
  • the method for manufacturing a light-emitting element includes a step of patterning a mask layer on the surface of a first conductivity type semiconductor layer forming part or all of the first substrate; Forming a plurality of first-conductivity-type protruding semiconductors by anisotropically etching the semiconductor layer using the mask layer as a mask; A semiconductor shell forming step of forming a second conductivity type semiconductor layer so as to cover the surface of the first conductivity type protruding semiconductor.
  • the manufacturing method of the present invention in the manufactured light emitting element, since the second conductive type semiconductor layer is formed so as to cover the first conductive type protruding semiconductor, almost all side surfaces of the protruding semiconductor are formed. Can be emitted. Therefore, according to the light emitting element, it is possible to increase the light emission amount per unit area of the first substrate as compared with a light emitting diode chip having a planar light emitting layer. Further, according to this manufacturing method, since the protruding semiconductor is made of a first conductivity type semiconductor, the resistance can be easily reduced by increasing the amount of impurities that give the first conductivity type to the protruding semiconductor.
  • the protruding semiconductor can be formed by anisotropic etching with the photolithography process, a protruding semiconductor having a favorable shape can be obtained and the yield can be improved. Can do.
  • the method of manufacturing a light emitting device includes a crystal defect recovery step of annealing the first conductive type protruding semiconductor after the semiconductor core formation step and before the semiconductor shell formation step. Do.
  • the crystal defect density of the protruding semiconductor can be reduced and the crystallinity can be improved by the crystal defect recovery step by the annealing. Accordingly, in the subsequent semiconductor shell formation step, the crystallinity of the second conductivity type semiconductor layer is also improved, so that the light emission efficiency of the light emitting element can be improved.
  • a part of the first conductive type protruding semiconductor is etched by wet etching.
  • a crystal defect removal step is performed.
  • the crystal defect density of the protruding semiconductor can be reduced and the crystallinity can be improved by the crystal defect removal step by the etching. Accordingly, in the subsequent semiconductor shell formation step, the crystallinity of the second conductivity type semiconductor layer is also improved, so that the light emission efficiency of the light emitting element can be improved.
  • a part of the first conductive type protruding semiconductor is etched by wet etching.
  • a crystal defect removal step After the semiconductor core formation step and before the semiconductor shell formation step, the crystal defect recovery step of annealing the first conductive type protruding semiconductor is the crystal defect removal step, the crystal defect recovery step In order.
  • the crystallinity of the protruding semiconductor can be more effectively improved. Can do.
  • the method for manufacturing a light-emitting element includes a step of patterning a mask layer on the surface of a first conductivity type semiconductor layer forming part or all of the first substrate; Forming a plurality of first-conductivity-type protruding semiconductors by anisotropically etching the semiconductor layer using the mask layer as a mask; A semiconductor shell forming step of forming a second conductive type semiconductor layer so as to cover the surface of the first conductive type protruding semiconductor; A light emitting element separating step of separating the first conductive type protruding semiconductor covered with the second conductive type semiconductor layer from the first substrate.
  • the protruding light emitting elements formed by the protruding semiconductor formed by processing the semiconductor layer of the first conductivity type in the step of separating the light emitting elements are finally independent of each other. It becomes the light emitting element which became. Therefore, the use method of the projection-like light emitting elements can be diversified and the utility value can be increased in that each light emitting element can be used individually. For example, a desired number of separated light emitting elements can be arranged at a desired density. In this case, for example, a surface light-emitting device can be configured by rearranging a large number of fine light-emitting elements on a large-area substrate. In addition, the heat generation density can be lowered to achieve high reliability and long life.
  • the second conductive type semiconductor layer is formed so as to cover the first conductive type protruding semiconductor by this manufacturing method, almost all side surfaces of the protruding semiconductor can be made to emit light. . Therefore, a large number of light emitting elements having a large total light emission amount can be obtained from the substrate (first substrate). Further, according to this manufacturing method, since the protruding semiconductor is made of a first conductivity type semiconductor, the resistance can be easily reduced by increasing the amount of impurities that give the first conductivity type to the protruding semiconductor.
  • the protruding semiconductor can be formed by anisotropic etching with a photolithography process, a protruding semiconductor having a good shape as intended can be obtained, and consequently desired good Since a light-emitting element having a shape can be obtained, the yield of the light-emitting elements can be improved.
  • an active layer is formed between the semiconductor core formation step and the semiconductor shell formation step so as to cover the surface of the first conductive type protruding semiconductor.
  • the luminous efficiency can be increased in the active layer.
  • a transparent electrode layer is formed so as to cover the semiconductor layer of the second conductivity type after the semiconductor shell forming step.
  • the transparent electrode layer can prevent the voltage drop in the second conductive type semiconductor layer while transmitting the light emitted from the protruding semiconductor. Therefore, light can be emitted uniformly over the entire protruding semiconductor.
  • a desired number of light emitting elements separated in the light emitting element separating step can be arranged on the second substrate with a desired density. Therefore, for example, a surface light-emitting device can be configured by rearranging a large number of fine light-emitting elements on a large-area substrate. In addition, the heat generation density can be lowered to achieve high reliability and long life.
  • the illuminating device of one Embodiment was equipped with the light-emitting device manufactured by the manufacturing method of the said light-emitting device.
  • the lighting device of this embodiment since the light emitting device manufactured by the method for manufacturing a light emitting device of the present invention is provided, a lighting device with high luminous efficiency and high reliability can be obtained.
  • the liquid crystal backlight of one embodiment includes a light emitting device manufactured by the method for manufacturing a light emitting device.
  • liquid crystal backlight of this embodiment since the light emitting device manufactured by the method for manufacturing a light emitting device of the present invention is provided, a backlight with high heat dissipation efficiency can be obtained.
  • a method for manufacturing a display device comprising: patterning a mask layer on a surface of a first conductivity type semiconductor layer that forms part or all of a first substrate; Forming a plurality of first-conductivity-type protruding semiconductors by anisotropically etching the semiconductor layer using the mask layer as a mask; A semiconductor shell forming step of forming a second conductive type semiconductor layer so as to cover the surface of the first conductive type protruding semiconductor; A light emitting element separating step of separating the first conductive type protruding semiconductor covered with the second conductive type semiconductor layer from the first substrate to obtain a light emitting element; A light emitting element arranging step of arranging the light emitting element corresponding to a pixel position on the second substrate; And a light emitting element wiring step for performing wiring for energizing the light emitting elements arranged corresponding to the pixel positions on the second substrate.
  • the second conductive type semiconductor layer is formed so as to cover the surface of the first conductive type protruding semiconductor, the first conductive material as the protruding semiconductor material is formed.
  • the light emission area per unit area of the substrate can be greatly increased. That is, it is possible to greatly reduce the manufacturing cost of the first conductive type protruding semiconductor covered with the second conductive type semiconductor layer functioning as a light emitting element.
  • the protruding semiconductor of the first conductivity type covered with the semiconductor layer of the second conductivity type is separated from the first substrate and disposed on the second substrate serving as a panel of the display device.
  • the display device is manufactured by wiring.
  • the manufacturing cost of the display device can be reduced by manufacturing the display device by this manufacturing method.
  • the display device of one embodiment is manufactured by the above-described manufacturing method of the display device.
  • a low-cost display device is provided.
  • the diode of the present invention includes a core portion, A first conductivity type semiconductor layer formed so as to cover the core portion; A second conductivity type semiconductor layer covering the first conductivity type semiconductor layer, The material of the core part and the material of the semiconductor layer of the first conductivity type are different from each other.
  • the diode of the present invention since the first conductive type semiconductor layer and the second conductive type semiconductor layer play a role of the two poles of the diode, a desired material can be selected as the material of the core portion. . Therefore, it is possible to give the core part desired properties (refractive index, thermal conductivity, electrical conductivity, etc.) without increasing the manufacturing cost and reducing the manufacturing yield.
  • the refractive index of the core portion is larger than the refractive index of the first conductive type semiconductor layer, and the light emitting diode is provided.
  • the generated light can be guided to the core part, and the core part can emit light strongly.
  • the refractive index of the core portion is larger than the refractive index of the first conductive type semiconductor layer and has a photoelectric effect.
  • the light capturing effect can be enhanced, and the photoelectric effect can be enhanced.
  • the refractive index of the core portion is smaller than the refractive index of the first conductive type semiconductor layer, and the light emitting diode.
  • the generated light is difficult to enter the core part and is easily reflected on the surface of the core part. Therefore, the light is externally transmitted from the first conductive type semiconductor layer to the second conductive type semiconductor layer. Can be taken out.
  • the thermal conductivity of the core portion is larger than that of the first conductive type semiconductor layer, and the light emitting diode.
  • the thermal conductivity of the core portion is larger than the thermal conductivity of the first conductive type semiconductor layer and has a photoelectric effect.
  • the electrical conductivity of the core is greater than the electrical conductivity of the first conductivity type semiconductor layer, and the LED is a light emitting diode.
  • the electric resistance of the core portion is reduced and current can easily flow from the core portion to the first conductivity type semiconductor layer, loss can be suppressed and light can be emitted efficiently.
  • the electric conductivity of the core portion is larger than the electric conductivity of the first conductive type semiconductor layer and has a photoelectric effect.
  • the electric resistance of the core portion is reduced and a current is easily passed from the first conductive type semiconductor layer to the core portion, loss can be suppressed and power can be generated efficiently.
  • the core part is made of silicon.
  • the core, the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer are formed on the substrate, and then the core portion and the first conductivity are formed from the substrate. It was produced by separating the semiconductor layer of the mold and the semiconductor layer of the second conductivity type.
  • the diode of this embodiment since it is separated from the substrate, it can be easily mounted on another substrate.
  • the core portion is formed on the substrate, Forming a first conductivity type semiconductor layer so as to cover the core portion; Forming a second conductivity type semiconductor layer so as to cover the first conductivity type semiconductor layer;
  • the material of the core part and the material of the first conductivity type semiconductor layer are different from each other.
  • the first conductive type semiconductor layer and the second conductive type semiconductor layer play a role of two poles of the diode, and a desired material for the core portion is obtained.
  • a diode can be manufactured in which the material can be selected and the core portion can have desired characteristics.
  • the lighting device of one embodiment includes the light emitting diode of the above embodiment.
  • the characteristics (refractive index, thermal conductivity, electrical conductivity) of the core portion of the light emitting diode can be set as desired without causing an increase in manufacturing cost and a decrease in manufacturing yield. Advantages such as easy setting of the directivity of illumination and improvement of illumination efficiency can be obtained.
  • the backlight according to one embodiment includes the light emitting diode according to the above embodiment.
  • the characteristics (refractive index, thermal conductivity, electrical conductivity) of the core portion of the light emitting diode can be set as desired, and the directivity of the backlight can be easily set. The merit that improvement of efficiency can be achieved is obtained.
  • the display device of one embodiment includes the light emitting diode of the above embodiment.
  • the characteristics (refractive index, thermal conductivity, electrical conductivity) of the core portion of the light emitting diode can be set as desired, and the directivity of the display device can be easily set. The merit that improvement of efficiency can be achieved is obtained.
  • the photodetector of one embodiment includes the diode having the photoelectric effect of the above embodiment.
  • desired characteristics (refractive index, thermal conductivity, electrical conductivity) of the core portion of the diode having the photoelectric effect can be obtained without causing an increase in manufacturing cost or a decrease in manufacturing yield. Can be set. Therefore, it is possible to improve the light capturing effect, improve the heat dissipation, suppress the loss, etc., increase the photoelectric conversion efficiency, and improve the light detection performance.
  • the solar cell of one embodiment includes the diode having the photoelectric effect of the above embodiment.
  • the characteristics (refractive index, thermal conductivity, electric conductivity) of the diode core having the photoelectric effect are desired without causing an increase in manufacturing cost or a decrease in manufacturing yield. Can be set. Therefore, it is possible to improve the light capturing effect, improve the heat dissipation, suppress the loss, and generate power efficiently.
  • the protruding semiconductor is made of the first conductivity type semiconductor, the resistance of the protruding semiconductor can be easily reduced by increasing the amount of impurities that give the first conductivity type to the protruding semiconductor. it can. Therefore, even if the length of the protruding semiconductor is increased, an increase in the resistance of the protruding semiconductor is suppressed, and light can be emitted uniformly from the root portion to the tip portion of the protruding semiconductor. Therefore, it is possible to further increase the light emission amount per unit area of the first conductivity type semiconductor base.
  • the diode of the present invention since the first conductive type semiconductor layer and the second conductive type semiconductor layer play the role of the two poles of the diode, a desired material can be selected as the material of the core portion. Therefore, it is possible to give the core part desired properties (refractive index, thermal conductivity, electrical conductivity, etc.) without increasing the manufacturing cost and reducing the manufacturing yield.
  • FIG. 33B is a cross-sectional view illustrating a state where the separated light emitting diode of FIG. 33A is mounted on the mounting substrate in a laid state. It is process sectional drawing of the manufacturing method of the diode as 11th Embodiment of this invention. It is process sectional drawing of the said 11th Embodiment. It is process sectional drawing of the said 11th Embodiment.
  • FIG. 1A is a cross-sectional view of the light emitting device of the first embodiment
  • FIG. 1B is a view of the light emitting device of the first embodiment as viewed from above, and is a diagram exclusively showing the position of the rod-shaped semiconductor
  • 2 to 6 are views for explaining a method of manufacturing the light emitting device according to the first embodiment.
  • the light emitting device 100 includes an n-type semiconductor layer 113 as a first conductivity type semiconductor base, a plurality of n-type rod-shaped semiconductors 121 formed on the n-type semiconductor layer 113, and And a p-type semiconductor layer 123 as a second conductivity type semiconductor layer covering the rod-shaped (projection-shaped) semiconductor 121.
  • a p-type semiconductor layer may be provided instead of the n-type semiconductor layer 113.
  • an n-type semiconductor layer is provided instead of the p-type semiconductor layer 123 as the second conductivity type semiconductor layer.
  • the semiconductor layer 123 forming the second conductivity type semiconductor layer is n-type and the semiconductor layer 113 is n-type.
  • the semiconductor layer 123 is p-type.
  • the semiconductor layer 113 as the first conductivity type semiconductor base and the first conductivity type rod-shaped semiconductor 121 are n-type and the second conductivity type semiconductor layer 123 is p-type will be described.
  • the n-type and the p-type are interchanged so that the semiconductor layer 113 as the first conductive type semiconductor base and the first conductive type rod-shaped semiconductor 121 are set as the p-type and the second conductive type. This can be an explanation of an example in which the n-type semiconductor layer 123 is used.
  • an n-type semiconductor layer 113 serving as a first conductivity type semiconductor base is formed on a substrate 111, and this n-type semiconductor is formed.
  • a plurality of n-type rod-shaped semiconductors 121 as first-conductivity-type rod-shaped semiconductors are formed on the layer 113 at intervals from each other.
  • the entire surfaces of the n-type rod-shaped semiconductor 121 and the n-type semiconductor layer 113 are covered with an active layer 122.
  • a p-type semiconductor layer 123 is formed on the entire surface of the active layer 122. Further, the entire surface of the p-type semiconductor layer 123 is covered with a transparent electrode layer 124.
  • a transparent electrode layer 124 covering the active layer 122 covering the rod-shaped semiconductor 121 is opposed to the gap between the plurality of n-type rod-shaped semiconductors 121 with a gap therebetween.
  • the gap facing the transparent electrode layer 124 is filled with a transparent member 131 having a higher transparency than the transparent electrode layer 124.
  • the transparent electrode layer 124 is not covered with the transparent member 131, but is covered with the upper electrode 141 above the rod-shaped semiconductor 121. That is, as shown in FIG. 1A, the upper electrode 141 is formed on the transparent member 131 that fills the gap where the transparent electrode layer 124 faces and the transparent electrode layer 124 that covers the upper portion of the rod-shaped semiconductor 121. Yes. Thereby, the transparent electrode layer 124 is electrically connected to the upper electrode 141.
  • the substrate 111 may be made of an insulator such as sapphire, a semiconductor such as silicon, but is not limited thereto.
  • the n-type semiconductor layer 113, the n-type rod-shaped semiconductor 121, and the p-type semiconductor layer 123 are formed using a semiconductor whose base material is GaN, GaAs, AlGaAs, GaAsP, InGaN, AlGaN, GaP, ZnSe, AlGaInP, or the like. Also good.
  • the active layer 122 for example, when GaN is selected as the n-type semiconductor layer 113, the n-type rod-shaped semiconductor 121, and the p-type semiconductor layer 123, InGaN can be used.
  • the transparent electrode layer 124 for example, ITO, ZnO, SnO or the like can be used.
  • the transparent member 131 can be made of, for example, a silicon oxide film or a transparent resin.
  • a metal such as gold, silver, copper, aluminum, or tungsten, or a transparent electrode such as ITO, ZnO, or SnO can be used.
  • a substrate such as a silicon substrate that does not transmit light is used as the substrate 111, it is necessary to select a transparent electrode that transmits light as the upper electrode 141.
  • each portion is, for example, that the thickness of the n-type semiconductor layer 113 as the semiconductor base is 5 ⁇ m, the thickness D of the n-type semiconductor rod 121 is 1 ⁇ m, the length L is 20 ⁇ m, and the n-type semiconductor rod
  • the spacing P between 121 may be 3 ⁇ m, the thickness of the active layer 122 may be 10 nm, the thickness of the p-type semiconductor layer 123 may be 150 nm, and the thickness of the transparent electrode layer 124 may be 150 nm.
  • the substrate 111 is a silicon substrate, the n-type semiconductor layer 113, the n-type rod-shaped semiconductor 121 and the p-type semiconductor layer 123 is GaN, the active layer 122 is InGaN, and is transparent.
  • ITO is used as the electrode layer 124, a silicon oxide film is used as the transparent member 131, and ITO is used as the upper electrode 141.
  • said example is used for the film thickness of each part.
  • the first conductivity type is n-type and the second conductivity type is p-type.
  • the first conductivity type may be p-type and the second conductivity type may be n-type.
  • the n-type semiconductor layer 113 forms a lower electrode (cathode), and a current is passed between the lower electrode (cathode) and the upper electrode (anode) 141, whereby the light emitting device (light emission). Diode).
  • the light emitting device of this embodiment since the p-type semiconductor layer 123 is formed so as to cover the n-type rod-shaped semiconductor 121, almost all side surfaces of the rod-shaped semiconductor 121 emit light. Therefore, the light emission amount per area of the substrate 111 can be increased as compared with a light emitting diode chip having a planar light emitting layer.
  • the light emission amount per unit area of the substrate 111 can be increased as the length L of the rod-shaped semiconductor 121 is increased.
  • the rod-shaped semiconductor 121 is made of an n-type semiconductor, and the resistance of the rod-shaped semiconductor 121 can be easily reduced by increasing the amount of impurities that give the rod-shaped semiconductor 121 n-type. Therefore, even if the length L of the rod-shaped semiconductor 121 is increased, light can be emitted uniformly from the root portion to the tip portion of the rod-shaped semiconductor 121. Therefore, it is possible to further increase the light emission amount per area of the substrate 111.
  • the value (L / D) obtained by dividing the length L by the thickness D is 10 or more, that is, the length L is 10 times or more the thickness D. It is preferable that This is because the light emission amount per unit area of the substrate 111 can be remarkably increased.
  • the rod-shaped semiconductor is made of an active layer as in the prior art, if the value (L / D) obtained by dividing the length L of the rod-shaped semiconductor by the thickness D is 10 or more, the tip of the rod-shaped semiconductor It becomes difficult to cause the part to emit light.
  • the light emitting area (the total area of the active layer 122 in this embodiment) is preferably set to be three times or more the area of the n-type semiconductor layer 113 as the semiconductor base.
  • the area of the n-type semiconductor layer 113 refers to the n-type rod-shaped semiconductor 121 and structures on the n-type rod-shaped semiconductor 121 (the active layer 122, the p-type semiconductor layer 123, the transparent electrode layer 124, the transparent member 131). Etc.) is taken as the area of the flat semiconductor layer 113. In such a case, the amount of light emission per unit area of the substrate 111 is large, and a cost reduction effect can be sufficiently obtained.
  • the active layer 122 is formed between the n-type rod-shaped semiconductor 121 and the p-type semiconductor layer 123, but this is not essential. However, it is preferable to provide the active layer 122, which can increase luminous efficiency. Further, since the active layer 122 is formed between the n-type rod-shaped semiconductor 121 and the p-type semiconductor layer 123 to a thickness of, for example, 10 nm, the luminous efficiency is good. This is because the active layer is provided to increase the recombination probability by confining bipolar carriers (holes and electrons) in a narrow range. As in the prior art, when all of the rod-shaped semiconductor portion is made of an active layer, the light emission efficiency is not high due to insufficient carrier confinement.
  • a transparent electrode layer 124 is formed on the p-type semiconductor layer 123, but this is not essential. However, it is preferable to provide the transparent electrode layer 124, and the presence of the transparent electrode layer 124 causes the voltage drop in the p-type semiconductor layer 123 while the transparent electrode layer 124 transmits light emitted from the active layer 122. Can be prevented. Therefore, light can be emitted uniformly over the entire rod-shaped semiconductor 121.
  • the transparent electrode layer 124 is formed on the p-type semiconductor layer 123, all the gaps between the plurality of n-type rod-shaped semiconductors 121 may not be filled with the transparent electrode layer 124.
  • the opposing gap in which the transparent electrode layer 124 is opposed to the gap between the plurality of n-type rod-shaped semiconductors 121 is formed as described above. It is preferable to fill with a transparent member 131 made of a material having higher transparency than the transparent electrode layer 124. This is because the transparent electrode layer 124 generally has carriers for flowing current, and thus the transparency is poor. Therefore, by filling the gaps between the plurality of n-type rod-shaped semiconductors 121 with the transparent member 131 made of a silicon oxide film or a transparent resin, the light emission efficiency of the light emitting element can be improved.
  • the active layer 122, the p-type semiconductor layer 123, and the transparent electrode layer 124 cover the entire surfaces of the n-type rod-shaped semiconductor 121 and the n-type semiconductor layer 113. It is not always necessary to cover the entire surface. That is, the active layer 122, the p-type semiconductor layer 123, and the transparent electrode layer 124 only need to cover at least the n-type rod-shaped semiconductor 121. This is because the active layer 122, the p-type semiconductor layer 123, and the transparent electrode layer 124 cover the n-type rod-shaped semiconductor 121, thereby increasing the light emission amount per area of the substrate 111.
  • FIG. 1 a method for manufacturing the light emitting device 100 according to the first embodiment will be described with reference to FIGS. 2, 3A, 3B, and 4 to 6.
  • FIG. 2 a method for manufacturing the light emitting device 100 according to the first embodiment will be described with reference to FIGS. 2, 3A, 3B, and 4 to 6.
  • FIG. 2 a method for manufacturing the light emitting device 100 according to the first embodiment will be described with reference to FIGS. 2, 3A, 3B, and 4 to 6.
  • a semiconductor layer 112 made of n-type GaN is formed as a first conductive type semiconductor layer on a substrate 111 made of silicon to a thickness of 25 ⁇ m by MOCVD.
  • the substrate 111 made of silicon and the semiconductor layer 112 made of n-type GaN are integrated to form the first substrate 110.
  • the semiconductor layer 112 made of n-type GaN forms part of the first substrate 110.
  • a single layer substrate made of n-type GaN may be prepared.
  • the first conductivity type semiconductor layer made of n-type GaN is the first substrate. It can be said that it does everything.
  • a photoresist is formed on the semiconductor layer 112 made of n-type GaN as the first conductivity type semiconductor layer by a photolithography process. 151 is patterned. At this time, for example, a silicon oxide film may be formed on the entire surface of the semiconductor layer 112 made of n-type GaN as the first conductivity type semiconductor layer, and the silicon oxide film may be patterned by a photolithography process and an etching process. Good.
  • the semiconductor layer 112 made of n-type GaN as the first conductivity type semiconductor layer is anisotropically dry-etched to perform n-type etching.
  • a rod-like (projection-like) semiconductor 121 made of GaN is formed (semiconductor core forming step).
  • etching is performed so that the semiconductor layer 112 made of n-type GaN remains with a thickness of about 5 ⁇ m, and the remaining portion becomes the semiconductor layer 113 made of n-type GaN.
  • the length L of the first conductivity type rod-shaped semiconductor 121 made of n-type GaN is 20 ⁇ m.
  • a plurality of the rod-shaped semiconductors 121 are formed on the n-type GaN semiconductor layer 113 in a standing state with a space therebetween.
  • the substrate 111 on which the rod-shaped semiconductor 121 is formed is annealed in a nitrogen atmosphere.
  • Crystal defect recovery step Thereby, the rod-shaped semiconductor 121 is annealed.
  • the annealing temperature can be 600 ° C. to 1200 ° C.
  • a more preferable annealing temperature when the rod-shaped semiconductor 121 is made of n-type GaN is 700 ° C. to 900 ° C. at which crystal defect recovery of GaN is remarkable and GaN does not decompose.
  • the substrate 111 on which the rod-shaped semiconductor 121 is formed is wet-etched, and a layer containing crystal defects generated in the rod-shaped semiconductor 121 at a high density Are selectively removed (crystal defect removal step).
  • crystal defect removal step For example, when the rod-shaped semiconductor 121 is n-type GaN, hot phosphoric acid heated to 120 ° C. to 150 ° C. may be used as the etchant.
  • the crystal defect density of the rod-shaped semiconductor 121 can be reduced and the crystallinity can be improved. Accordingly, in the subsequent semiconductor shell formation step, the crystallinity of the active layer (light emitting layer) 122 and the second conductivity type semiconductor layer 123 is also improved, so that the light emission efficiency of the light emitting element can be improved.
  • the crystal defect removal step (wet etching step) and the crystal defect recovery step (annealing step) are both performed in the order of the wet etching step and the annealing step (that is, after performing the wet etching step, By performing the annealing step), the crystallinity of the rod-shaped semiconductor 121 can be more effectively improved.
  • the entire surface of the semiconductor layer 113 made of n-type GaN as the first conductivity type semiconductor base and the rod-shaped semiconductor 121 made of n-type GaN as the first conductivity type rod-shaped semiconductor is formed.
  • an active layer 122 made of InGaN having a thickness of 10 nm is formed.
  • a second conductivity type semiconductor layer 123 made of p-type GaN having a thickness of 150 nm is formed on the active layer 122 made of InGaN (semiconductor shell formation step).
  • a transparent electrode layer 124 made of 150 nm ITO is formed on the second conductivity type semiconductor layer 123 made of p-type GaN.
  • the active layer 122 made of InGaN and the second conductivity type semiconductor layer 123 made of p-type GaN are formed by MOCVD.
  • the transparent electrode layer 124 made of ITO is formed by sputtering, mist CVD, or plating.
  • a gap between the conductive rod-shaped semiconductors 121 is filled with a transparent member 131 made of a silicon oxide film.
  • the silicon oxide film can be formed by applying SOG (Spin-On Glass). After applying the SOG, the upper portion of the transparent electrode layer 124 is exposed by wet etching, and the upper electrode 141 made of ITO is formed by sputtering to complete the light emitting device 100.
  • the method for manufacturing the light emitting device 100 includes a step of patterning a mask layer made of a photoresist 151 on the surface of the n-type GaN semiconductor layer 112 constituting a part or all of the first substrate 110, and the mask layer as a mask.
  • the p-type semiconductor layer 123 is formed so as to cover the rod-shaped semiconductor 121 made of n-type GaN, almost all side surfaces of the rod-shaped semiconductor 121 emit light. Therefore, the light emission amount per area of the substrate 111 can be increased as compared with a light emitting diode chip having a planar light emitting layer. Further, according to this manufacturing method, the rod-shaped semiconductor 121 is made of an n-type semiconductor, and the resistance can be easily reduced by increasing the amount of impurities giving the n-type. Therefore, even if the length L of the rod-shaped semiconductor 121 is increased, light can be emitted uniformly from the root portion to the tip portion of the rod-shaped semiconductor 121.
  • the rod-shaped semiconductor 121 is formed by anisotropic etching with the photolithography process, the rod-shaped semiconductor 121 having a good shape as intended can be obtained and the yield can be improved. be able to.
  • the length L of the n-type rod-shaped semiconductor 121 is 10 times or more the thickness D. This is because the light emission amount per area of the substrate 111 can be remarkably increased.
  • the rod-shaped semiconductor is made of an active layer as in the prior art, if the value (L / D) obtained by dividing the length L of the rod-shaped semiconductor by the thickness D is 10 or more, It becomes difficult to cause the tip portion to emit light. Therefore, when the value (L / D) obtained by dividing the length L of the rod-shaped semiconductor 121 by the thickness D is 10 or more, the advantage of the low resistance and high emission intensity of this embodiment is particularly remarkable.
  • the light emitting area (the total area of the active layer 122 in this embodiment) is preferably three times or more than the area of the n-type semiconductor layer 113 as the semiconductor base.
  • the area of the n-type semiconductor layer (semiconductor base) 113 refers to the n-type GaN rod-shaped semiconductor 121 and structures thereon (active layer 122, p-type GaN semiconductor layer 123, transparent electrode layer 124, etc.).
  • the area of the flat semiconductor layer 113 in a state where is removed. In such a case, the amount of emitted light per substrate 111 is large, and a sufficient cost reduction effect can be obtained.
  • the active layer 122 made of InGaN is formed so as to cover the surface of the rod-shaped semiconductor 121 made of n-type GaN between the semiconductor core forming step and the semiconductor shell forming step. Thereby, luminous efficiency can be raised. Note that the active layer 122 may not be formed.
  • the transparent electrode layer 124 is formed so as to cover the p-type GaN semiconductor layer 123 after the semiconductor shell formation step.
  • the transparent electrode layer 124 can prevent the voltage drop in the p-type GaN semiconductor layer 123 while transmitting the light emitted from the active layer 122. Therefore, light can be emitted uniformly over the entire rod-shaped semiconductor 121.
  • the transparent electrode layer 124 is formed on the p-type GaN semiconductor layer 123. However, not all the gaps between the plurality of n-type rod-shaped semiconductors 121 are filled with the transparent electrode layer 124.
  • the transparent electrode layer 124 is thinly formed on the type GaN semiconductor layer 123, and the remaining gap (opposing gap where the transparent electrode layers 124 face each other) is filled with the transparent member 131. This is because the transparent electrode generally has poor transparency because of the presence of carriers for flowing current. Therefore, the luminous efficiency of the light emitting element can be improved by filling the gap formed by the first conductivity type rod-shaped semiconductor 121 with a silicon oxide film, a transparent resin, or the like.
  • FIG. 7A is a cross-sectional view of the light emitting device of the second embodiment
  • FIG. 7B is a plan view of the light emitting device of the second embodiment as viewed from above, and is a diagram exclusively showing the position of the plate-like semiconductor.
  • FIG. 7C is a plan view for explaining the method for manufacturing the light emitting element of the second embodiment.
  • a plate-shaped semiconductor 1121 is used instead of the plurality of first conductivity type (n-type) rod-shaped (projecting) semiconductors 121 in the light emitting device 100 of the first embodiment.
  • the point provided is different from the first embodiment. Therefore, in the second embodiment, the details of the parts common to the first embodiment are not described.
  • 1100 is a light emitting element
  • 1111 is a substrate
  • 1113 is an n-type semiconductor layer
  • 1121 is a plate (projection) semiconductor
  • 1122 is an active layer
  • 1123 is a p-type semiconductor layer
  • 1124 is transparent.
  • the substrate 1111, the n-type semiconductor layer 1113, the plate-like semiconductor 1121, the active layer 1122, the p-type semiconductor layer 1123, the transparent electrode layer 1124, the transparent member 1131, and the upper electrode 1141 are each in the first embodiment described above.
  • the substrate 111, the n-type semiconductor layer 113, the rod-shaped semiconductor 121, the active layer 122, the p-type semiconductor layer 123, the transparent electrode layer 124, the transparent member 131, and the upper electrode 141 described in the embodiment are manufactured using the same materials.
  • each part is, for example, that the thickness of the n-type semiconductor layer 1113 as the semiconductor base is 5 ⁇ m, the thickness D1 of the n-type semiconductor semiconductor 1121 is 1 ⁇ m, the width D2 is 5 ⁇ m, and the height L Is 20 ⁇ m, the distance P1 between the n-type plate semiconductors 1121, the distance P2 (see FIG. 7B) is 3 ⁇ m, the thickness of the active layer 1122 is 10 nm, the thickness of the p-type semiconductor layer 1123 is 150 nm, and the transparent electrode layer 1124
  • an n-type semiconductor layer 1113 forms a lower electrode (cathode), and a current is passed between the lower electrode (cathode) and the upper electrode (anode) 1141, whereby the light emitting device (light emitting device). Diode).
  • the p-type semiconductor layer 1123 is formed so as to cover the n-type plate-like semiconductor 1121, almost all side surfaces of the plate-like semiconductor 1121 emit light. Therefore, the light emission amount per area of the substrate 1111 can be increased as compared with a light emitting diode chip having a planar light emitting layer.
  • the light emission amount per unit area of the substrate 1111 can be increased as the height L of the plate-like semiconductor 1121 is increased.
  • the plate-like semiconductor 1121 is made of an n-type semiconductor, and the resistance of the plate-like semiconductor 1121 can be easily reduced by increasing the amount of impurities that give the plate-like semiconductor 1121 n-type. Therefore, even if the height L of the plate-like semiconductor 1121 is increased, light can be emitted uniformly from the root portion to the tip portion of the plate-like semiconductor 1121. Therefore, it is possible to further increase the light emission amount per area of the substrate 1111.
  • the plate-like semiconductor 1121 is used, but the advantage of being plate-like is explained as follows.
  • the light emission efficiency of a light emitting element depends on the plane orientation of the light emitting layer.
  • a nonpolar plane a-plane or m-plane
  • the main surface the surface having the width of D2 in FIG. 7B
  • the overall light emission efficiency can be increased.
  • the active layer 1122 is formed between the n-type plate-like semiconductor 1121 and the p-type semiconductor layer 1123, but this is not essential. However, it is preferable to provide the active layer 1122, which can increase the light emission efficiency. Further, since the active layer 1122 is formed between the n-type plate semiconductor 1121 and the p-type semiconductor layer 1123 to a thickness of, for example, 10 nm, the light emission efficiency is good. This is because the active layer is provided to increase the recombination probability by confining bipolar carriers (holes and electrons) in a narrow range.
  • a transparent electrode layer 1124 is formed on the p-type semiconductor layer 1123, but this is not essential. However, it is preferable to provide the transparent electrode layer 1124, and the presence of the transparent electrode layer 1124 causes the transparent electrode layer 1124 to transmit light emitted from the active layer 1122 while causing a voltage drop in the p-type semiconductor layer 1123. Can be prevented. Therefore, light can be emitted uniformly over the entire plate-like semiconductor 1121.
  • the transparent electrode layer 1124 is formed on the p-type semiconductor layer 1123, all the gaps between the plurality of n-type plate-like semiconductors 1121 are not filled with the transparent electrode layer 1124. Is preferred. That is, after forming the thin transparent electrode layer 1124 on the p-type semiconductor layer 1123, a gap between the transparent electrode layers 1124 facing each other is formed in a gap remaining between the plurality of n-type plate-like semiconductors 1121. It is preferable to fill with a transparent member 1131 made of a material having higher transparency than the transparent electrode layer 1124. The reason for this is that the transparent electrode layer 1124 generally has poor transparency due to the presence of carriers for flowing current. Therefore, the light emitting efficiency of the light emitting element can be improved by filling the gaps between the plurality of n-type plate-like semiconductors 1121 with the transparent member 1131 made of a silicon oxide film or a transparent resin.
  • the active layer 1122, the p-type semiconductor layer 1123, and the transparent electrode layer 1124 cover the entire surfaces of the n-type plate semiconductor 1121 and the n-type semiconductor layer 1113. It is not always necessary to cover the entire surface. That is, the active layer 1122, the p-type semiconductor layer 1123, and the transparent electrode layer 1124 only need to cover at least the n-type plate-like semiconductor 1121. This is because the active layer 1122, the p-type semiconductor layer 1123, and the transparent electrode layer 1124 cover the n-type plate semiconductor 1121, so that the light emission amount per area of the substrate 1111 can be increased.
  • the manufacturing method of the light emitting device 1100 according to the second embodiment is almost the same as the manufacturing method of the light emitting device 100 described with reference to FIGS. 2 to 6 in the first embodiment.
  • the only difference between the method of manufacturing the light emitting device 1100 of the second embodiment and the method of manufacturing the light emitting device 100 is that, instead of the process described in FIG. 3A in the first embodiment, as shown in FIG.
  • the photoresist 1151 is patterned on the semiconductor layer 1112 made of n-type GaN by a photolithography process, the pattern of the photoresist 1151 is only made rectangular.
  • the p-type semiconductor layer 1123 is formed so as to cover the plate-like semiconductor 1121 made of n-type GaN by the manufacturing method in the second embodiment, almost all side surfaces of the plate-like semiconductor 1121 emit light. Therefore, the light emission amount per area of the substrate 1111 can be increased as compared with a light emitting diode chip having a planar light emitting layer. Further, according to this manufacturing method, the plate-like semiconductor 1121 is made of an n-type semiconductor, and the resistance can be easily reduced by increasing the amount of impurities that give the n-type. Therefore, even if the height L of the plate-like semiconductor 1121 is increased, light can be emitted uniformly from the root portion to the tip portion of the plate-like semiconductor 1121.
  • the plate-like semiconductor 1121 is formed by anisotropic etching with the photolithography process, the plate-like semiconductor 1121 having a good shape as intended can be obtained and the yield can be increased. Can be improved.
  • the active layer 122 made of InGaN is formed so as to cover the surface of the plate-like semiconductor 1121 made of n-type GaN between the semiconductor core forming step and the semiconductor shell forming step. Thereby, luminous efficiency can be raised. Note that the active layer 1122 may not be formed.
  • the transparent electrode layer 1124 is formed so as to cover the p-type GaN semiconductor layer 1123 after the semiconductor shell formation step.
  • the transparent electrode layer 1124 can prevent a voltage drop in the p-type GaN semiconductor layer 1123 while transmitting light emitted from the active layer 1122. Therefore, light can be emitted uniformly over the entire plate-like semiconductor 1121.
  • the transparent electrode layer 1124 is formed on the p-type GaN semiconductor layer 1123.
  • the transparent electrode layer 1124 is thinly formed on the p-type GaN semiconductor layer 1123, and the remaining gap (opposing gap where the transparent electrode layers 1124 face each other) is filled with the transparent member 1131.
  • the transparent electrode generally has poor transparency because of the presence of carriers for flowing current. Therefore, the light emitting efficiency of the light emitting element can be improved by filling the gap formed by the first conductive type plate-like semiconductor 1121 with a silicon oxide film or a transparent resin.
  • the rod-shaped semiconductor 121 and the plate-shaped semiconductor 1121 are used, but the shape of these semiconductors is not limited to this. It is essential that a first conductive type protruding semiconductor is formed on a first conductive type semiconductor layer serving as a semiconductor base, and that the first conductive type protruding semiconductor is covered with the second conductive type. Important. Therefore, the protruding semiconductor of the first conductivity type is not limited to the rod shape or the plate shape, but may be a bent plate shape or an annular shape (tubular shape) in which the plate semiconductor is closed.
  • the plate-shaped semiconductors arranged in two directions may be connected to each other at the intersection to form one lattice-shaped protruding semiconductor. It may be a shape, a polygonal column shape, a cone shape, a polygonal pyramid shape, a hemispherical shape, a spherical shape, or the like.
  • FIGS. 8 to 17 are views showing steps of forming a light emitting element and a light emitting device in the third embodiment.
  • the first half of the process is the same as the manufacturing process described with reference to FIGS. 2 to 5 in the first embodiment. Therefore, here, the manufacturing process from FIG. 2 to FIG. 5 described above will be described following the process from FIG. 2 to FIG.
  • the first half of the manufacturing method according to the third embodiment is the same as the process described with reference to FIG. 3A in the steps of FIGS. 2 to 5 of the first embodiment, and FIG. 7C in the second embodiment.
  • the first conductive type protruding semiconductor may be a plate semiconductor.
  • the active layer 122 made of InGaN, the second conductive type semiconductor layer 123 made of p-type GaN, and the transparent electrode made of ITO are sequentially formed on the surface of the n-type GaN rod-shaped semiconductor 121.
  • Layer 124 is deposited. Thereafter, anisotropic dry etching is performed. By this anisotropic dry etching, as shown in FIG. 8, the transparent electrode layer 124 made of ITO, the second conductive type semiconductor layer 123 made of p-type GaN, the active layer 122 made of InGaN, and the first layer made of GaN.
  • each of the one-conductivity-type rod-shaped semiconductor 121 and the first-conductivity-type semiconductor layer 113 made of n-type GaN is removed to expose part of the substrate 111 made of silicon.
  • the InGaN active layer 122, the p-type GaN semiconductor layer 123, and the ITO transparent electrode layer 124 are left on the side wall of the remaining portion of the rod-shaped semiconductor 121 made of n-type GaN.
  • the semiconductor layer 113 made of n-type GaN becomes a plurality of n-type GaN semiconductor layers 125 spaced from each other on the silicon substrate 111.
  • one n-type GaN rod-shaped semiconductor 121 is erected on each n-type GaN semiconductor layer 125, and this n-type GaN semiconductor layer 125, n-type GaN rod-shaped semiconductor 121, InGaN active layer 122, p-type GaN.
  • a plurality of portions Z each including the semiconductor layer 123 and the ITO transparent electrode layer 124 are erected on the silicon substrate 111 at intervals.
  • the n-type GaN semiconductor layer 112 forming a part of the first substrate 110 has an upper structure (n-type GaN rod-shaped semiconductor 121, n-type GaN semiconductor layer 125). Used for formation. Therefore, the silicon substrate 111 is synonymous with the first substrate 110.
  • each of the separated portions Z becomes a light emitting element 200.
  • the n-type GaN semiconductor layer 125 is exposed on the side of the light emitting element 200 that is in contact with the silicon substrate 111, and the side that is separated from the silicon substrate 111 is in electrical contact with the p-type GaN semiconductor layer 123.
  • the transparent electrode layer 124 made of ITO is exposed.
  • the n-type GaN semiconductor layer 125 becomes the cathode electrode K, and the transparent electrode layer 124 becomes the anode electrode A.
  • the rod-shaped portion Z is cut from the silicon substrate 111 by irradiating ultrasonic waves in the solution to vibrate the rod-shaped portion Z.
  • the light-emitting element separated in this way is also plate-like.
  • the following steps are the same for the plate-like light emitting element, the following description will be made assuming that the light emitting element is rod-shaped exclusively.
  • the mask layer is patterned with the photoresist 151 on the surface of the n-type semiconductor layer 112 forming a part of the first substrate 110 described with reference to FIGS.
  • the manufacturing method of the third embodiment is a light emitting device that separates the n-type rod-shaped semiconductor 121 covered with the p-type semiconductor layer 123 from the first substrate 110, as described in FIGS. A separation process is provided. According to these steps, the rod-like light emitting element 200 formed by processing the n-type GaN semiconductor layer 112 finally becomes an independent light emitting element.
  • each light emitting element 200 can be used individually and freely.
  • a desired number of separated light emitting elements 200 can be arranged at a desired density.
  • a surface light-emitting device can be configured by rearranging a large number of fine light-emitting elements 200 on a large-area substrate.
  • the heat generation density can be lowered to achieve high reliability and long life.
  • the p-type semiconductor layer 123 is formed so as to cover the n-type rod-shaped semiconductor 121 by this manufacturing method, almost all side surfaces of the rod-shaped semiconductor 121 emit light.
  • the rod-shaped semiconductor 121 is made of an n-type semiconductor, and the resistance can be easily reduced by increasing the amount of impurities giving the n-type.
  • the rod-shaped semiconductor 121 is formed by anisotropic etching with the photolithography process, a desired-shaped rod-shaped semiconductor 121 is obtained as intended, and thus desired good A light-emitting element 200 having a simple shape can be obtained. Therefore, the yield of the light emitting element 200 can be improved.
  • the active layer 122 is formed so as to cover the surface of the n-type rod-shaped semiconductor 121 between the semiconductor core forming step and the semiconductor shell forming step, the luminous efficiency can be increased. Note that the active layer 122 may not be formed.
  • the transparent electrode layer 124 is formed so as to cover the p-type semiconductor layer 123 after the semiconductor shell forming step, the p-type semiconductor is transmitted while transmitting the light emitted from the active layer 122. It is possible to prevent a voltage drop from occurring in the layer 123. Therefore, light can be emitted uniformly over the entire rod-shaped semiconductor 121.
  • a second substrate 210 having a surface on which a first electrode 211 and a second electrode 212 are formed is prepared.
  • the second substrate 210 is an insulating substrate, and the first and second electrodes 211 and 212 are metal electrodes.
  • a metal electrode having a desired electrode shape can be formed on the surface of the second substrate 210 as the first and second electrodes 211 and 212 using a printing technique.
  • a metal film and a photoreceptor film are uniformly deposited on the surface of the second substrate 210, the photoreceptor film is exposed and developed to a desired electrode pattern, and the metal film is formed using the patterned photoreceptor film as a mask.
  • the first and second electrodes 211 and 212 can be formed by etching.
  • the second substrate 210 is an insulating material such as glass, ceramic, alumina, or resin, or a silicon oxide film formed on a semiconductor surface such as silicon, and the surface is insulative.
  • a base insulating film such as a silicon oxide film or a silicon nitride film is preferably formed on the surface.
  • the surfaces of the first and second electrodes 211 and 212 may be covered with an insulating film (not shown).
  • an insulating film (not shown). In this case, the following effects are produced.
  • a voltage is applied between the first electrode 211 and the second electrode 212 in a state where the liquid is introduced onto the second substrate 210. Current can be prevented from flowing. Such a current can cause a voltage drop in the electrode and cause alignment failure, or can cause the electrode to dissolve due to electrochemical effects.
  • a silicon oxide film or a silicon nitride film can be used as the insulating film covering the first and second electrodes 211 and 212.
  • the first and second electrodes 211 and 212 and the light emitting element 200 can be easily electrically connected, so that the first and second electrodes 211 and 212 are used as wirings. Easy to use.
  • the place where the light emitting element 200 is arranged is defined by the place S where the facing portion 211A of the first electrode 211 and the facing portion 212A of the second electrode 212 face each other. That is, in the light emitting element disposition process described later, the light emitting element 200 is disposed at a location S where the first and second electrodes 211 and 212 face each other so as to bridge the first and second electrodes 211 and 212. . For this reason, the distance between the first electrode 211 and the second electrode 212 in the place S where the facing portions 211A and 212A of the first and second electrodes 211 and 212 face each other is slightly shorter than the length of the light emitting element 200. Is desirable.
  • the distance between the facing portion 211A of the first electrode 211 and the facing portion 212A of the second electrode 212 is It is desirable that the thickness is 12 ⁇ m to 18 ⁇ m. That is, the distance is preferably about 60 to 90% of the length of the light emitting element 200, more preferably about 80 to 90% of the length of the light emitting element 200.
  • FIG. 11 shows a cross section of the second substrate 210 taken along line VV of FIG.
  • the fluid 221 may be a liquid such as IPA (isopropyl alcohol), ethanol, methanol, ethylene glycol, propylene glycol, acetone, water, or a mixture thereof, but is not limited thereto.
  • IPA isopropyl alcohol
  • ethanol methanol
  • ethylene glycol propylene glycol
  • acetone water
  • water or a mixture thereof
  • the viscosity is low so as not to disturb the arrangement of the light-emitting elements
  • the ion concentration is not extremely high
  • the substrate is volatile so that the substrate can be dried after the arrangement of the light-emitting elements. It is.
  • a liquid having a remarkably high ion concentration is used, when a voltage is applied to the first and second electrodes 211 and 212, an electric double layer is quickly formed on the electrodes and the electric field penetrates into the liquid. Therefore, the arrangement of the light emitting elements is hindered.
  • a cover on the second substrate 210 so as to face the second substrate 210.
  • the cover is installed in parallel with the second substrate 210, and a uniform gap (for example, 500 ⁇ m) is provided between the second substrate 210 and the cover.
  • a fluid 221 including the light emitting element 200 is filled in the gap.
  • FIG. 14 is a sectional view taken along line VV in FIG.
  • the principle that the light emitting element 200 is arranged at a predetermined position on the second substrate 210 will be described as follows.
  • An alternating voltage as shown in FIG. 12 is applied between the first electrode 211 and the second electrode 212.
  • the reference potential V R shown in Figure 12 to the second electrode 212 is applied, the first electrode 211 applies an AC voltage of amplitude VPPL / 2.
  • an electric field is generated in the fluid 221.
  • polarization occurs in the light emitting element 220 or charges are induced, and charges are induced on the surface of the light emitting element 220.
  • the direction (polarity) of the light emitting element 200 is random as shown in FIG.
  • the direction (polarity) of the light emitting element 200 is the direction in which the anode A of the light emitting element 200 is on the right side of the cathode K and the anode A of the light emitting element 200 is on the left side of the cathode K in FIG. Say which direction it is.
  • an appropriate operation method of the light emitting device in which the directions of the plurality of light emitting elements 200 are randomly arranged will be described later.
  • the frequency of the AC voltage applied to the first electrode 211 is preferably 10 Hz to 1 MHz, and more preferably 50 Hz to 1 kHz because the arrangement is most stable.
  • the AC voltage applied between the first electrode 211 and the second electrode 212 is not limited to a sine wave, but may be any one that periodically varies, such as a rectangular wave, a triangular wave, and a sawtooth wave.
  • the VPPL which is twice the amplitude of the AC voltage applied to the first electrode 211, can be set to 0.1 to 10 V. However, when the voltage is 0.1 V or less, the arrangement of the light emitting elements 200 is deteriorated. Immediately fixed on the substrate 110, the yield of the arrangement deteriorates. Therefore, the above VPPL is preferably 1 to 5V, more preferably about 1V.
  • the AC voltage is applied between the first electrode 211 and the second electrode 212.
  • the liquid of the fluid 221 is evaporated and dried, and the light emitting element 200 is fixed onto the second substrate 210.
  • a sufficient high voltage (10 to 100 V) is applied to the first electrode 211 and the second electrode 212 so that the light-emitting element 200 is formed.
  • the second substrate 210 is dried after being fixed on the second substrate 210 and the application of the high voltage is stopped.
  • an interlayer insulating film 213 made of a silicon oxide film is deposited on the entire surface of the second substrate.
  • a contact hole 217 is formed in the interlayer insulating film 213 by applying a general photolithography process and a dry etching process, and further a metal is deposited by a metal deposition process, a photolithography process, and an etching process. Are patterned to form metal wirings 214 and 215 (light emitting element wiring step). Thereby, the anode A and the cathode K of the light emitting element 200 can be wired respectively. Thus, the light emitting device 250 is completed.
  • the photoresist 151 is formed on the surface of the n-type semiconductor layer 112 constituting part or all of the first substrate 110 described with reference to FIGS.
  • a step of patterning the mask layer a step of forming a semiconductor core in which the n-type semiconductor layer 112 is anisotropically etched using the mask layer as a mask to form a plurality of n-type rod-shaped semiconductors 121;
  • the light emitting element that separates the n-type rod-shaped semiconductor 121 covered with the p-type semiconductor layer 123 from the first substrate 110 described with reference to FIGS.
  • a separation process is provided.
  • a light emitting element arrangement step of arranging an n-type rod-shaped semiconductor 121 covered with a p-type semiconductor layer 123 separated from the silicon substrate 111 of the first substrate 110 on the second substrate 210;
  • a desired number of the separated light emitting elements 200 can be arranged on the second substrate 210 with a desired density. Therefore, for example, a surface light emitting device can be configured by rearranging a number of fine light emitting elements 200 on the second substrate 210 having a large area. In addition, the heat generation density can be lowered to achieve high reliability and long life.
  • the direction of the light emitting element 200 (that is, the anode A is located on the right side or the left side of the cathode K in FIG. 13).
  • a DC voltage may be applied between the two metal wirings 214 and 215.
  • a reverse voltage is applied to about half of the light emitting elements 200 and no light is emitted. Therefore, it is preferable to apply an AC voltage between the two metal wirings 214 and 215. In this way, all the light emitting elements 200 can emit light.
  • FIG. 18 is a side view of an LED bulb 300 that is the illumination device of the fourth embodiment.
  • This LED bulb 300 has a base 301 as a power supply connection part that is fitted in an external socket and connected to a commercial power supply, and a conical heat dissipation part that has one end connected to the base 301 and the other end gradually expanding in diameter. 302 and a translucent part 303 that covers the other end of the heat dissipating part 302.
  • a light emitting unit 304 is disposed in the heat radiating unit 302.
  • the light emitting unit 304 is mounted with a light emitting device 306 in which a large number of light emitting elements are arranged on a square heat sink 305.
  • the light emitting device 306 includes a substrate 310, a first electrode 311 and a second electrode 312 formed on the substrate 310, and a large number of light emitting elements 320.
  • the method described in the third embodiment described above may be used as a method for arranging a fine light emitting element (light emitting diode) 320 on the substrate 310 and a method for wiring. That is, the light emitting device 306 is manufactured by the method described in the third embodiment.
  • the size of one light emitting element 320 is 20 ⁇ m in length and 1 ⁇ m in diameter as exemplified in the second embodiment, and the luminous flux emitted from one light emitting element 320 is 5 millimeters.
  • Thousand light-emitting elements 320 can be arranged on the substrate 310 to form a light-emitting substrate that emits a total of 250 lumens.
  • the light emitting device 306 in which a large number of light emitting elements 320 are arranged on the substrate 310 the following effects can be obtained as compared with the case of using a light emitting device in which one or several light emitting elements are arranged.
  • the heat generation density associated with light emission is small and uniform.
  • a normal light emitting element light emitting diode
  • the heat generation density associated with light emission is large, and the light emitting layer becomes hot, affecting the light emission efficiency and reliability. Is given.
  • the third embodiment by arranging a large number of fine light emitting elements 320 on the substrate 310 of the light emitting device 306, the light emission efficiency can be improved and the reliability can be improved.
  • FIG. 22 is a plan view showing a backlight as a fifth embodiment of the present invention.
  • the fifth embodiment includes a light emitting device manufactured by the method for manufacturing a light emitting device of the present invention as described in the above third embodiment.
  • a plurality of light emitting devices 402 are mounted in a grid pattern at predetermined intervals on a rectangular support substrate 401 as an example of a heat sink.
  • the light emitting device 402 is a light emitting device manufactured using the method for manufacturing a light emitting device of the second embodiment described above.
  • 100 or more light emitting elements are arranged on a substrate (not shown).
  • the backlight having the above-described configuration, by using the light emitting device 402, it is possible to realize a backlight that has little variation in brightness and can achieve a long lifetime and high efficiency. Further, by attaching the light emitting device 402 on the support substrate 401, the heat dissipation effect is further improved.
  • the sixth embodiment relates to a display device manufactured using a method similar to the method for manufacturing a light emitting device of the present invention.
  • FIG. 23 shows a circuit of one pixel of the LED display as the sixth embodiment.
  • This LED display is manufactured using the manufacturing method of the light emitting element or the light emitting device of the present invention.
  • the light emitting element included in the LED display the light emitting element 200 described in the third embodiment can be used.
  • This LED display is an active matrix address system, a selection voltage pulse is supplied to the row address line X1, and a data signal is sent to the column address line Y1.
  • the selection voltage pulse is input to the gate of the transistor T1 and the transistor T1 is turned on, the data signal is transmitted from the source to the drain of the transistor T1, and the data signal is stored as a voltage in the capacitor C.
  • the transistor T2 is for driving the pixel LED 520, and the light emitting element 200 described in the third embodiment can be used for the pixel LED 20.
  • the pixel LED 520 is connected to the power source Vs through the transistor T2. Therefore, when the transistor T2 is turned on by the data signal from the transistor T1, the pixel LED 520 is driven by the power source Vs.
  • one pixel shown in FIG. 23 is arranged in a matrix.
  • a pixel LED 520 and transistors T1 and T2 of each pixel arranged in a matrix are formed on the substrate.
  • the following steps may be performed.
  • the light emitting device 200 is formed by the semiconductor core forming step, the semiconductor shell forming step, and the light emitting device separating step described with reference to FIGS. 2 to 5, 8, and 9 in the manufacturing method of the third embodiment.
  • the transistors T1 and T2 are formed on a substrate such as glass using a normal TFT forming method.
  • a first electrode and a second electrode for arranging minute light-emitting elements to be the pixel LEDs 520 are formed on the substrate on which the TFT is formed.
  • a minute light emitting element 200 is disposed at a predetermined position on the substrate (light emitting element disposing step). Thereafter, an upper wiring process is performed to connect the minute light emitting element 200 to the drain of the transistor T2 and the ground line (light emitting element wiring process).
  • the manufacturing process is performed on the surface of the n-type semiconductor layer 112 constituting a part or the whole of the first substrate 110 as described with reference to FIGS. 2 to 5 in the third embodiment.
  • the n-type rod-shaped semiconductor 121 covered with the p-type semiconductor layer 123 described in the third embodiment with reference to FIGS. 8 and 9 is separated from the first substrate 110.
  • the n-type rod-shaped semiconductor 121 covered with the p-type semiconductor layer 123 separated from the silicon substrate 111 of the first substrate 110 is placed at the pixel position on the second substrate.
  • the p-type semiconductor layer 123 is formed so as to cover the surface of the n-type rod-shaped semiconductor 121, the light emission area per unit area of the first substrate 110 is very large. , And 10 times that in the case of planar epitaxial growth. In order to obtain the same light emission amount, the number of substrates can be reduced to, for example, 1/10, and the manufacturing cost can be greatly reduced. That is, the manufacturing cost of the n-type rod-shaped semiconductor 121 covered with the p-type semiconductor layer 123 functioning as a light-emitting element can be greatly reduced.
  • the n-type rod-shaped semiconductor 121 covered with the p-type semiconductor layer 123 is separated from the silicon substrate 111 of the first substrate 110, and is disposed on the second substrate that becomes the panel of the display device of this embodiment. Further, the display device is manufactured by wiring. Since the number of pixels of the display device of this embodiment is about 6 million, for example, when a light emitting element is used for each pixel, the cost of the light emitting element is extremely important. Therefore, manufacturing the display device through the above steps can reduce the manufacturing cost of the display device.
  • the orientation of the anode and cathode of the pixel LED 520 is random. Is AC driven.
  • the semiconductor layer 113 as the first conductivity type semiconductor base and the first conductivity type rod-shaped semiconductor 121 are n-type and the second conductivity type semiconductor layer 123 is p-type.
  • the semiconductor layer 113 as the first conductivity type semiconductor base and the first conductivity type rod-shaped semiconductor 121 may be p-type
  • the second conductivity type semiconductor layer 123 may be n-type.
  • FIG. 24A is a perspective view of a light emitting diode 2005 as a seventh embodiment of the diode of the present invention
  • FIG. 24B is a cross-sectional view of the light emitting diode 2005.
  • the light-emitting diode 2005 includes a cylindrical rod-shaped core 2001 as a core portion, a cylindrical first shell 2002 as a first conductive type semiconductor layer covering the cylindrical rod-shaped core 2001, and the above-described structure.
  • a cylindrical second shell 2003 is provided as a semiconductor layer of the second conductivity type that covers the cylindrical first shell 2002. End faces of both end portions 2001A and 2001B of the rod-shaped core 2001 are exposed from the first and second shells 2002 and 2003.
  • the first shell 2002 has a flange-shaped one end portion 2002A, and the one end portion 2002A is exposed from the second shell 2003.
  • the rod-shaped core 2001 is made of SiC
  • the first shell 2002 is made of n-type GaN
  • the second shell 2003 is made of p-type GaN.
  • the rod-shaped core 2001 made of SiC has a refractive index of 3 to 3.5
  • the first shell 2002 made of n-type GaN has a refractive index of 2.5.
  • the rod-shaped core 2001 made of SiC has a thermal conductivity of 450 (W / (m ⁇ K))
  • the first shell 2002 made of n-type GaN has a thermal conductivity of 210 (W / (m ⁇ K)).
  • the light emitting diode 2005 of the seventh embodiment is suitable for a directional light emitting device.
  • the thermal conductivity (210 of the first shell 2002 in which the thermal conductivity (450 (W / (m ⁇ K))) of the rod-shaped core 2001 is made of the n-type GaN is used. (W / (m ⁇ K)))
  • the heat generated at the pn junction surfaces of the first and second shells 2002 and 2003 causes the first shell 2002 to move as shown by the arrow X1 in FIG.
  • the heat is easily diffused through the rod-shaped core 2001 to the entire diode. For this reason, it becomes easy to radiate the heat generated by the light emission of the rod-shaped light emitting diode 2005.
  • heat is diffused through the rod-shaped core 2001, the temperature on the entire surface of the rod-shaped light emitting diode 2005 can be made uniform, and a decrease in luminous efficiency due to high temperature concentration can be prevented.
  • the bar-shaped core 2001 extends. Strong light emission can be obtained from both end portions 2001A and 2001B in the extending direction (long axis direction).
  • the both ends 2001A and 2001B in the direction in which the rod-shaped core 2001 extends from the both ends 2001A and 2001B to the GaN substrate 2007. Intense light emission can be obtained in the extending direction (long axis direction). In the light emitting diode 2005 of FIG.
  • a part of the circumferential direction of one end of the second shell 2003 is removed, and a part of the circumferential direction of one end of the first shell 2002 is exposed.
  • a contact electrode 2009 is formed on the exposed portion of the first shell 2002, and a contact electrode 2008 is formed on the second shell 2002.
  • a SiC rod-shaped core 2011, an n-type GaN first shell 2012 covering the SiC rod-shaped core 2011, and the n-type GaN A plurality of light emitting diodes 2015 configured with the p-type GaN second shell 2013 covering the first shell 2012 may be formed on the SiC substrate 2006 with a certain interval.
  • the end 11A of the SiC rod-shaped core 2011 is covered with the first shell 12 of the n-type GaN and the second shell 13 of the p-type GaN.
  • the light emitting diode 2015 can emit strong light in the long axis direction so as to penetrate the SiC substrate 2006 from the end portion 2011B of the rod-shaped core 2011.
  • the light emitting diode 2035 may include the third shell 2031 that covers the circumferential surface of the shell 2003.
  • the light emitting diode 2035 is formed outside the second shell 2003, and the third shell 2031 having a refractive index n4 lower than the refractive index n3 of the second shell 2003 functions as a reflective film. That is, as shown in FIG. 26B, if the incident angle ⁇ to the interface between the second shell 2003 and the third shell 2031 is not less than sin ⁇ 1 (n4 / n3), total reflection is performed at the interface. Wake up. Therefore, light generated at the pn junction surfaces of the first and second shells 2002 and 2003 is difficult to escape to the outside of the diode, light can be emitted from the end portions 2001A and 2001B of the rod-shaped core 2001, and more directivity can be obtained. Rise.
  • the light emitting diode 2005 has been described in the seventh embodiment, a columnar rod-shaped core 2001, a cylindrical first shell 2002, and a cylindrical second shell 2003 having the same configuration as the light emitting diode 2005 are described.
  • You may comprise a photodetector with the diode which has the photoelectric effect provided.
  • this photodetector since the refractive index n1 of the rod-shaped core 2001 is larger than the refractive index n2 of the first shell 2002, it becomes difficult for light to escape to the outside of the diode, and the light capturing effect can be enhanced.
  • the photoelectric effect can be enhanced.
  • the thermal conductivity of the rod-shaped core 2001 is larger than the thermal conductivity of the first shell 2002, the heat dissipation can be improved and the temperature can be made uniform. A decrease in conversion efficiency can be avoided. Therefore, according to this photodetector, the light detection performance can be improved.
  • the light emitting diode 2005 has been described.
  • the columnar rod-shaped core 2001, the cylindrical first shell 2002, and the cylindrical second shell 2003 having the same configuration as the light emitting diode 2005 are described.
  • the thermal conductivity of the rod-shaped core 2001 is larger than the thermal conductivity of the first shell 2002, the heat dissipation can be improved and the temperature can be made uniform, and photoelectric conversion due to high temperature concentration. Reduced efficiency can be avoided. Therefore, according to this solar cell, the power generation performance can be improved.
  • a diode 2045 having a photoelectric effect similar to that of the light-emitting diode 2005 constituting the photodetector or solar cell is erected on the SiC substrate 2046 at a certain interval.
  • heat is diffused to the entire diode through the rod-shaped core 2001, and heat can be diffused from the base end portion 2001B of the rod-shaped core 2001 to the substrate 2046, and at the end portion 2001A of the tip end of the rod-shaped core 2001. Can also dissipate heat. Therefore, since heat dissipation can be improved and the temperature can be made uniform, a decrease in photoelectric conversion efficiency due to high temperature concentration can be avoided, and a photodetector with good detection performance and a solar cell with good power generation efficiency can be provided.
  • a part of the circumferential direction of one end portion of the first shell 2002 is exposed by removing a part of the circumferential direction of one end portion of the second shell 2003.
  • a contact electrode 2009 is formed on the exposed portion of one shell 2002, and a contact electrode 2008 is formed on the second shell 2003.
  • a SiC rod-like core 2051, an n-type GaN first shell 2052 covering the SiC rod-like core 2051, and the n-type GaN A plurality of diodes 2055 having a photoelectric effect constituted by the second shell 2053 of p-type GaN covering the first shell 2052 are formed on the SiC substrate 2056 at a certain interval in a standing state. Also good. In the diode 2055 having the photoelectric effect, an end portion 2051A of the SiC rod-shaped core 2051 is covered with the first shell 2052 of n-type GaN and the second shell 2053 of p-type GaN.
  • heat is diffused to the entire diode through the rod-shaped core 2051, and heat can be diffused from the base end portion 2051 ⁇ / b> B of the rod-shaped core 2051 to the SiC substrate 2056. Therefore, since heat dissipation can be improved and the temperature can be made uniform, a decrease in photoelectric conversion efficiency due to high temperature concentration can be avoided, and a photodetector with good detection performance and a solar cell with good power generation efficiency can be provided.
  • the first shells 2002 and 2052 are n-type GaN and the second shells 2003 and 2053 are p-type GaN.
  • the first shells 2002 and 2052 are p-type.
  • the second shells 2003 and 2053 may be n-type GaN.
  • FIG. 28A is a perspective view of a light emitting diode 2065 as an eighth embodiment of the diode of the present invention
  • FIG. 28B is a cross-sectional view of the light emitting diode 2065.
  • the light emitting diode 2065 of the eighth embodiment is made of SiO 2 instead of the cylindrical rod-shaped core 2001 made of SiC as the core portion of the light emitting diode 2005 of the seventh embodiment shown in FIGS. 24A and 24B.
  • Only the light-emitting diode 2005 of the seventh embodiment described above is different from the light-emitting diode 2005 of the seventh embodiment described above only in that the cylindrical rod-shaped core 2061 is provided. Therefore, in the eighth embodiment, the same reference numerals are given to the same parts as those in the seventh embodiment, and the parts different from those in the seventh embodiment will be mainly described.
  • the rod-shaped core 2061 made of SiO 2 has a refractive index of 1.45
  • the first shell 2002 made of n-type GaN has a refractive index of 2.5.
  • both end faces 2065A of each rod-like light emitting diode 2065 are formed.
  • 2065B and the side surface 2065C can emit light in all directions.
  • the both ends 2065A and 2065B and the side surface 2065C in the direction in which the rod-shaped core 2061 extends are exposed. Light can be emitted in all directions. Note that the diode 2065 in FIG.
  • 29C has a circumferential portion of one end of the second shell 2003 removed, and a circumferential portion of one end of the first shell 2002 is exposed.
  • a contact electrode 2009 is formed on the exposed portion of one shell 2002, and a contact electrode 2008 is formed on the second shell 2003.
  • a rod core 2061 of SiO 2 As a modification of the light emitting diode 2065, as shown in FIG. 29A, a rod core 2061 of SiO 2, the first shell 2062 of n-type GaN covering the rod-shaped core 2061 of the SiO 2, the n-type A plurality of light emitting diodes 2075 composed of a p-type GaN second shell 2063 covering the GaN first shell 2062 are formed on the SiO 2 substrate 2067 in a state of being erected at a certain interval. Also good.
  • the end portion 2061A of the SiO 2 rod-shaped core 2061 is covered with the first shell 2062 of n-type GaN and the second shell 2063 of p-type GaN. Also in this case, light can be emitted in all directions from both end portions 2075A and 2075B and the entire side surface 2075C of the rod-like light emitting diode 2075.
  • the first shells 2002 and 2062 are n-type GaN and the second shells 2003 and 2063 are p-type GaN.
  • the first shells 2002 and 2062 are p-type GaN.
  • the second shells 2003 and 2063 may be n-type GaN.
  • FIG. 30A is a perspective view of a light emitting diode 2085 as a ninth embodiment of the diode of the present invention
  • FIG. 30B is a cross-sectional view of the light emitting diode 2085.
  • the light emitting diode 2085 of the ninth embodiment includes a cylindrical rod-shaped core 2081 serving as a core portion, a cylindrical first shell 2082 serving as a first conductivity type semiconductor layer covering the columnar rod-shaped core 2081, and the above.
  • a cylindrical second shell 2083 is provided as a second conductive type semiconductor layer covering the cylindrical first shell 2082.
  • the end surfaces of both end portions 2081A and 2081B of the rod-shaped core 2081 are exposed from the first and second shells 2082 and 2083.
  • the first shell 2082 has a flange-shaped one end 2082 A, and the one end 2082 A is exposed from the second shell 2083.
  • the rod-shaped core 2081 is made of n-type Si
  • the first shell 2082 is made of n-type GaN
  • the second shell 2083 is made of p-type GaN.
  • the rod-shaped core 2081 made of the n-type Si has an electric conductivity of 1.0 ⁇ 10 5 (/ ⁇ m)
  • the first shell 2082 made of the n-type GaN has an electric conductivity of 1.0. ⁇ 10 4 (/ ⁇ m).
  • the electric conductivity (1.0 ⁇ 10 5 (/ ⁇ m)) of the rod-shaped core 2081 is the same as that of the first shell 2082 (1.0 ⁇ 10 4). (/ ⁇ m)). Therefore, as indicated by arrows E1, E2, and E3 in FIG. 30B, compared to the first shell 2082, the current flows more easily through the rod-shaped core 2081, and the first shell 2082 passes through the rod-shaped core 2081. It becomes easy for current to flow through the entire area. For this reason, loss can be suppressed and light can be emitted efficiently.
  • FIG. 30C Also in this case, as indicated by arrows F1, F2, and F3 in FIG. 30C, current flows more easily through the rod-shaped core 2081 compared to the first shell 2082, and the first core 2081 passes through the rod-shaped core 2081. It becomes easier for current to flow through the entire area of the shell 2082. For this reason, loss can be suppressed and improvement in light detection performance and improvement in power generation efficiency can be achieved.
  • a plurality of light emitting diodes 2095 shown in FIG. 31A as a modification of the light emitting diode 2085 may be formed on the n-type Si substrate 2090 in a state of being erected at a certain interval.
  • the light emitting diode 2095 includes a rod-shaped core 2091 made of n-type Si, an n-type GaN first shell 2092 covering the rod-shaped core 2091 made of n-type Si, and a first shell of the n-type GaN. And p-type GaN second shell 2093 covering 2092.
  • the end 2091A of the n-type Si rod-shaped core 2091 is covered with the n-type GaN first shell 2092 and the p-type GaN second shell 2093.
  • the n-type GaN first shell 2092 is connected to an n-type GaN extension 2092Z formed on the substrate 2090
  • the p-type GaN second shell 2093 is connected to the n-type GaN.
  • a p-type GaN extension 2093Z formed on the GaN extension 2092Z is connected.
  • a contact electrode 2096 is formed on the p-type GaN extension 2093Z
  • a contact electrode 2097 is formed on the n-type Si substrate 2090.
  • the contact electrode 2097 may be formed on the n-type Si substrate 2090.
  • the contact electrode can be easily formed.
  • a light emitting diode 2105 shown in FIG. 31B as another modification of the light emitting diode 2085 may be disposed on the GaN substrate 2100 in a lying state.
  • a part of one end of the n-type Si rod-shaped core 2101 in the circumferential direction is exposed from the first and second shells 2102 and 2103.
  • the first shell 2102 is made of n-type GaN
  • the second shell 2103 is made of p-type GaN.
  • a contact electrode 2106 is formed on the outer peripheral surface of the second shell 2103, and a contact electrode 2107 is formed on one end of the exposed n-type Si rod-shaped core 2101.
  • the light-emitting diode 2105 shown in FIG. 31B is, for example, one that is separated from the state of being erected on the Si substrate 2090 shown in FIG. 31A and placed on a GaN substrate 2100 as another substrate in a laid state. is there.
  • a contact electrode 2106 is formed on the second shell 2103 of p-type GaN, and a rod-shaped core made of n-type Si. Since the contact electrode 2107 may be formed on 2101, the contact electrode can be easily formed.
  • the light-emitting diodes 2095 and 2105 have been described.
  • a photoelectric conversion element photodetector or solar cell
  • the first shells 2082, 2092, 2102 are n-type GaN and the second shells 2083, 2093, 2103 are p-type GaN, but the first shells 2082, 2092, 2102 are used. May be p-type GaN, and the second shells 2083, 2093, and 2103 may be n-type GaN.
  • FIG. 32A is a perspective view of a light emitting diode 2115 as a tenth embodiment of the diode of the present invention
  • FIG. 32B shows a plurality of the light emitting diodes 2115 standing on the Si substrate 2110 with a certain interval. It is sectional drawing which shows a mode that it is.
  • the light emitting diode 2115 includes a core 2111 made of silicon, a first shell 2112 made of n-type GaN as a first conductivity type semiconductor layer formed so as to cover the core 2111, and the first And a second shell 2113 made of p-type GaN as a second conductivity type semiconductor layer formed so as to cover the shell 2112.
  • the core 2111 is made of silicon, a process for forming the core 2111 is established. Therefore, a desired good shape light emitting diode 2115 is obtained. Further, as compared with the case where the core is entirely made of the first conductivity type semiconductor, the amount of use of the first conductivity type semiconductor can be reduced, and the cost can be reduced.
  • a plurality of light emitting diodes 2115 formed on a Si substrate 2110 as a manufacturing substrate and spaced apart from each other are formed by etching or the like as shown in FIG. 33A.
  • the light emitting diode 2117 separated from the substrate 2110 as shown in FIG. 33B, the light emitting diode 2117 can be mounted on a GaN substrate 2118 as a mounting substrate in a lying state. That is, according to the light emitting diode 2117 separated from the substrate, the light emitting diode 2117 can be easily mounted on a desired mounting substrate different from the manufacturing substrate.
  • the first and second shells 2112 and 2113 of the light emitting diode 2115 formed in a standing state on the Si substrate 2110 are etched by RIE (reactive ion etching), and the Si substrate 2110 is dry etched by CF 4 or the like. Further, the light emitting diode 2115 can be separated from the Si substrate 2110 by applying ultrasonic waves in a solution such as IPA (isopropyl alcohol).
  • the first shell 2112 is n-type GaN and the second shell 2113 is p-type GaN.
  • the first shell 2112 is p-type GaN and the second shell 2113 is a p-type GaN. May be n-type GaN.
  • FIGS. 34A to 34I are cross-sectional views illustrating each manufacturing process in this manufacturing method.
  • an n-type Si substrate 2201 is prepared, and several SiO 2 films (not shown) such as TEOS (tetra-ethyl-ortho-silicate) are formed on the surface 2201A of the n-type Si substrate 2201.
  • a film is formed to a thickness of ⁇ m.
  • the thickness of the SiO 2 film is preferably 1 ⁇ m or more.
  • etching such as RIE (reactive ion etching) is performed on the SiO 2 film (not shown) to partially expose the n-type Si substrate 2201 from the SiO 2 film.
  • RIE reactive ion etching
  • the surface of the n-type Si substrate 2201 on which the plurality of cores 2202 made of n-type Si is formed.
  • a thermal oxide film is formed. Thereafter, the thermal oxide film is peeled off with HF (hydrofluoric acid) to obtain a Si surface free from defects and dust.
  • the n-type Si substrate 2201 on which the plurality of cores 2202 are formed is set in a MOCVD (metal organic chemical vapor deposition) apparatus, and thermal cleaning is performed in a hydrogen atmosphere at 1200 ° C. for several tens of minutes, and natural oxidation is performed. The film is removed and the Si surface is hydrogen terminated. Thereafter, the substrate temperature is lowered to 1100 ° C., and an AlN layer (not shown) and an Al X Ga 1-X N (0 ⁇ x ⁇ 1) layer (not shown) are grown. Note that the AlN layer and the Al X Ga 1-X N (0 ⁇ x ⁇ 1) layer are not necessarily formed.
  • MOCVD metal organic chemical vapor deposition
  • n-type GaN is grown by MOCVD (metal organic chemical vapor deposition) to form a first shell 2203 of the first conductivity type.
  • MOCVD metal organic chemical vapor deposition
  • FIG. 34D several to several tens of Ga 1 -Y In Y N / Ga 1 -Z In ZN (0 ⁇ Y, Z ⁇ 1) multiple quantum wells (MQW) are formed by MOCVD.
  • a quantum well layer (active layer) 2204 having a structure is grown.
  • a p-Al n Ga 1-n N (0 ⁇ n ⁇ 1) layer (not shown) is grown on the quantum well layer (active layer) 2204. Further, as shown in FIG.
  • p-type GaN is grown to form the second conductivity type second shell 2205 covering the quantum well layer 2204.
  • the quantum well layer 2204 and the p-Al n Ga 1-n N (0 ⁇ n ⁇ 1) layer (not shown) on the quantum well layer 2204 are not necessarily formed.
  • ITO in-added indium oxide
  • CVD chemical vapor deposition
  • sputtering sputtering
  • plating to form an ITO conductive film 2206.
  • annealing may be performed at 650 ° C. for 10 minutes in a mixed atmosphere of nitrogen and oxygen to form a p-type translucent electrode.
  • a ZnO conductive film or an FTO (fluorine-added tin oxide) conductive film may be employed instead of the ITO conductive film 2206.
  • the ITO conductive film 2206, the p-type GaN second shell 2205, the quantum well layer 2204, and the n-type GaN first shell 2203 are etched by RIE using an etching gas such as Cl 2 .
  • an etching gas such as Cl 2 .
  • etching gas such as CF 4 .
  • the tip of the n-type Si core 2202 is etched, and the n-type Si substrate 2201 is left so that an n-type Si portion 2201B immediately below the n-type Si core 2202 remains. Is etched from the surface.
  • the n-type Si core 2202 is attached to the n-type Si substrate 2201 as shown in FIG. Separate from part 2201B. Thereby, a plurality of light emitting diodes 2207 separated from the n-type Si substrate 2201 are obtained.
  • the substrate 2201 is an n-type Si substrate and the core 2202 is an n-type Si core has been described.
  • a third modification is shown in the following (1), (2), and (3). Note that the formation of the first shell 2203, the quantum well layer 2204, the second shell 2205, and the ITO conductive film 2206 is the same as in the above embodiment.
  • the substrate 2201 is an SiC substrate, and the core 2202 is SiC.
  • the core made of SiC is formed by RIE (reactive ion etching) using the SiO 2 film as a mask.
  • the substrate 2201 is an SiO 2 substrate, and the core 2202 is SiO 2 .
  • a known lithography method and dry etching method used in a normal semiconductor process can be used for the formation of the core by SiO 2 .
  • the substrate 2201 is an n-type Si substrate, and the core 2202 is n-type Si.
  • the core 2202 made of n-type Si can be formed by VLS (Vapor-Liqid-Solid) growth.
  • the first conductivity type first shell 2203 is formed as n-type GaN by MOCVD.
  • CVD, plating, sputtering, etc. may be performed according to the material of the first conductivity type first shell 2203.
  • the substrate 2201, the core 2202, and the first shell 2203 are n-type
  • the second shell 2205 is p-type.
  • the substrate 2201, the core 2202, and the first shell 2203 are p-type.
  • the second shell 2205 may be n-type.
  • a photoelectric conversion element photodetector or solar cell
  • the light emitting diode 2300 according to the twelfth embodiment uses a light emitting diode manufactured up to the step shown in FIG. 34F of the eleventh embodiment of the method for manufacturing a light emitting diode.
  • the light emitting diode 2300 of the twelfth embodiment is formed along the surface of the n-type Si substrate 2201 among the conductive film 2206, the p-type GaN second shell 2205, and the quantum well layer 2204.
  • the extending end portion is removed by etching such as RIE to expose the end portion 2203B of the first shell 2203 of n-type GaN.
  • a contact electrode 2307 was formed on the exposed end portion 2203B of the first shell 2203, and a contact electrode 2301 was formed on the end portion 2206B of the conductive film 2206.
  • a plurality of n-type Si rod-like cores 2202 formed on an n-type Si substrate 2201 in a standing state with an interval are provided as a first shell 2203 and a quantum well layer 2204 of n-type GaN. , and sequentially covered with a second shell 2205 of p-type GaN. Therefore, according to the light emitting diode 2300, the light emitting area can be increased as compared with the case where a flat laminated film without the rod-shaped core 2202 is provided, and thus the amount of emitted light can be increased at a low cost.
  • the light-emitting elements 2305 shown in FIG. 35B on which the light-emitting diodes 2300 are mounted can be mounted in a grid pattern on the support substrate 2306 with a space therebetween as shown in FIG. 35C, whereby the lighting device 2307 can be obtained.
  • the lighting device 2307 can be a backlight or a display device.
  • the light-emitting diode 2300 manufactured up to the step shown in FIG. 34F of the eleventh embodiment is used.
  • the light-emitting diode 2300 manufactured up to the step shown in FIG. 34F is a modification of the eleventh embodiment. May be used.
  • the substrate 2201, the core 2202, and the first shell 2203 are n-type
  • the second shell 2205 is p-type.
  • the substrate 2201, the core 2202, and the first shell 2203 are p-type.
  • the second shell 2205 may be n-type.
  • the light emitting diode 2400 of the thirteenth embodiment uses the light emitting diode 2207 manufactured up to the step shown in FIG. 34I of the eleventh embodiment of the method for manufacturing a light emitting diode described above.
  • the light emitting diode 2400 of the thirteenth embodiment includes the conductive film 2206 of the light emitting diode 2207 fabricated in the above eleventh embodiment, the second shell 2205 of p-type GaN, and the quantum well layer 2204.
  • a part 2203C on the tip side of the n-type GaN first shell 2203 is exposed by removing a part on the tip side by etching.
  • a contact electrode 2403 is formed on a portion 2203C of the first shell 2203, and a contact electrode 2402 is formed on the conductive film 2206.
  • the light emitting diode 2400 is disposed on the substrate 2401 in a lying state.
  • the substrate 2401 can be, for example, a flexible substrate or a glass substrate, but the substrate 2401 may be an insulating substrate of another material.
  • a plurality of the light emitting diodes 2400 may be arranged on the substrate 2401 to form the light emitting element 2410.
  • wirings 2405 and 2406 are connected to contact electrodes 2402 and 2403 of each light emitting diode 2400 in each column.
  • a plurality of the light emitting elements 2410 can be mounted on the support substrate 2411 in a lattice pattern with a space therebetween, whereby a lighting device 2412 can be obtained.
  • the lighting device 2412 may be a backlight or a display device.
  • the light emitting diode 2400 the one manufactured in the eleventh embodiment is used.
  • the light emitting diode 2400 manufactured in a modification of the eleventh embodiment may be used.
  • the photoelectric conversion element of the fourteenth embodiment can be a photodetector or a solar cell.
  • the photoelectric conversion element of the fourteenth embodiment is a process that omits the step of forming the quantum well layer 2204 shown in FIG. 34D out of the steps up to the process shown in FIG. 34F of the eleventh embodiment of the method for manufacturing a light-emitting diode described above. The produced one is used.
  • the n-type Si rod-shaped cores 2202 formed on the n-type Si substrate 2201 at intervals are used as the n-type GaN first shell 2203 and the p-type GaN second shell.
  • the shell 2205 and the ITO conductive film 2206 are sequentially covered.
  • the n-type Si substrate 2201 is disposed on the insulating substrate 2501. Further, in the photoelectric conversion element 2500 of this embodiment, as shown in FIG. 37A, the conductive film 2206 and the p-type GaN second shell 2205 extend along the surface of the n-type Si substrate 2201.
  • the end portions of the portions 2206B and 2205B are removed by etching such as RIE to expose the end portion 2203B of the first shell 2203 of n-type GaN. Then, a contact electrode 2503 was formed on the exposed end portion 2203B of the first shell 2203, and a contact electrode 2502 was formed on the end portion 2205B of the second shell 2205 or the end portion 2206B of the conductive film 2206.
  • a plurality of n-type Si rod-shaped cores 2202 formed on an n-type Si substrate 2201 in a standing state with a space therebetween are formed as a first shell 2203 of n-type GaN and p-type GaN.
  • the second shell 2205 is sequentially covered. Therefore, according to this photoelectric conversion element 2500, the PN junction area per unit area of the substrate 2201 can be increased as compared with the case where a flat laminated film without the rod-shaped core 2202 is formed. Therefore, the cost per unit area of the PN junction area can be reduced. Further, since light enters the gaps between the n-type Si rod-like cores 2202 and a light confinement effect can be obtained, the efficiency of photoelectric conversion per unit area can be increased.
  • the step of forming the quantum well layer 2204 shown in FIG. 34D out of the steps shown in FIG. 34I of the eleventh embodiment is omitted.
  • a photoelectric conversion element 2520 illustrated in FIG. 37B was obtained using the manufactured diode.
  • the diode 2517 included in the photoelectric conversion element 2520 according to this modification is formed by removing a portion of the conductive film 2206 and a portion of the tip side of the p-type GaN second shell 2205 in the circumferential direction by etching. A part in the circumferential direction of the portion on the tip side of one shell 2203 is exposed. A contact electrode 2518 is formed on the exposed n-type GaN first shell 2203, and a contact electrode 2519 is formed on the conductive film 2206 on the opposite side of the n-type Si rod-shaped core 2202 from the contact electrode 2518. Formed.
  • the diode 2517 is disposed on the substrate 2521 in a lying state so that the contact electrode 2519 is positioned on the substrate 2521 side.
  • a flexible substrate or a conductive substrate can be used as the substrate 2521.
  • the step of forming the quantum well layer 2204 shown in FIG. 34D out of the steps shown in FIG. 34I of the eleventh embodiment is omitted.
  • a photoelectric conversion element 2530 shown in FIG. 37C was obtained using the diode manufactured through the above-described process.
  • a diode 2527 included in the photoelectric conversion element 2530 of this modification is formed by removing a part of the conductive film 2206 and a portion of the tip side of the second shell 2205 of the p-type GaN in the circumferential direction by etching, thereby removing the n-type GaN first. A part in the circumferential direction of the portion on the tip side of one shell 2203 is exposed. A contact electrode 2528 was formed on the exposed portion of the exposed n-type GaN first shell 2203, and a contact electrode 2529 was formed on the conductive film 2206 on the same side of the contact electrode 2528.
  • the diode 2527 has the ITO conductive film 2206 in contact with the back surface 2531B of the light incident surface 2531A of the substrate 2531 and the contact electrodes 2528 and 2529 with respect to the substrate 2531. It is arranged in a lying state so that it is located on the opposite side. Note that a glass substrate or a light-transmitting substrate can be used as the substrate 2531.
  • the diode fabricated in the eleventh embodiment is used, but the diode fabricated in the modified example of the eleventh embodiment may be used.
  • the rod-shaped core as the core portion has a cylindrical shape, but may have a polygonal column shape or an elliptical column shape, and may have a conical shape, an elliptical cone shape, a polygonal pyramid shape, or the like.
  • the first and second shells have a cylindrical shape.
  • a polygonal cylindrical shape, an elliptical cylindrical shape, a conical shape, an elliptical cone shape, a polygonal pyramid shape, etc. corresponding to the shape of the core portion. Also good.

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Abstract

Cet élément électroluminescent (100) comprend : une base semi-conductrice de GaN de type n (113) ; une pluralité de semi-conducteurs de GaN de type n en forme de baguette (121) formés sur le haut de la base semi-conductrice de GaN de type n (113) dans un état vertical et séparés mutuellement par intervalles ; et une couche semi-conductrice de GaN de type p (123) qui recouvre les semi-conducteurs de GaN de type n en forme de baguettes (121). La résistance des semi-conducteurs de GaN de type n en forme de baguettes (121) peut être rapidement réduite en augmentant la quantité d'impuretés qui produisent la forme de n aux semi-conducteurs en forme de baguettes (121). Ainsi, l'augmentation de résistance des semi-conducteurs de GaN de type n en forme de baguettes (121) est supprimée et les semi-conducteurs peuvent émettre de la lumière uniformément depuis la base des semi-conducteurs de GaN de type n en forme de baguettes jusqu'à leur extrémité, même si la longueur des semi-conducteurs de GaN de type n en forme de baguettes (121) est augmentée.
PCT/JP2011/064231 2010-09-01 2011-06-22 Élément électroluminescent et son procédé de production, procédé de production d'un dispositif électroluminescent, dispositif d'éclairage, rétroéclairage, dispositif d'affichage et diode WO2012029381A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/820,081 US9190590B2 (en) 2010-09-01 2011-06-22 Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode
KR1020157021465A KR20150098246A (ko) 2010-09-01 2011-06-22 발광 소자 및 그 제조 방법, 발광 장치의 제조 방법, 조명 장치, 백라이트, 표시 장치 및 다이오드
KR1020137007755A KR20130093115A (ko) 2010-09-01 2011-06-22 발광 소자 및 그 제조 방법, 발광 장치의 제조 방법, 조명 장치, 백라이트, 표시 장치 및 다이오드
CN201180052596.4A CN103190004B (zh) 2010-09-01 2011-06-22 发光元件及其制造方法、发光装置的制造方法、照明装置、背光灯、显示装置以及二极管

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014049736A (ja) * 2012-09-04 2014-03-17 Asahi Kasei Corp 太陽電池及び太陽電池システム
WO2018012086A1 (fr) * 2016-07-11 2018-01-18 シャープ株式会社 Élément électroluminescent, dispositif électroluminescent, dispositif d'éclairage, rétroéclairage et dispositif d'affichage
US10347781B2 (en) 2012-06-21 2019-07-09 Norwegian University Of Science And Technology (Ntnu) Solar cells
US10347791B2 (en) 2015-07-13 2019-07-09 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
US10714337B2 (en) 2015-07-31 2020-07-14 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
US10861696B2 (en) 2010-12-13 2020-12-08 Norwegian University Of Science And Technology Compositions comprising epitaxial nanowires on graphene substrates and methods of making thereof
US11239391B2 (en) 2017-04-10 2022-02-01 Norwegian University Of Science And Technology (Ntnu) Nanostructure
US11261537B2 (en) 2013-06-21 2022-03-01 Norwegian University Of Science And Technology (Ntnu) III-V or II-VI compound semiconductor films on graphitic substrates
US11594657B2 (en) 2015-07-13 2023-02-28 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101069A (ja) * 2001-09-25 2003-04-04 Nagoya Industrial Science Research Inst Ｉｉｉ族窒化物量子ドットおよびその製造方法
JP2005522030A (ja) * 2002-03-28 2005-07-21 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ナノワイヤ製造方法及び電子装置
JP2005228936A (ja) * 2004-02-13 2005-08-25 Dongguk Univ 発光ダイオードおよびその製造方法
US20060273328A1 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
JP2008235444A (ja) * 2007-03-19 2008-10-02 Matsushita Electric Works Ltd 半導体発光装置およびそれを用いる照明装置ならびに半導体発光装置の製造方法
JP2008306156A (ja) * 2007-06-11 2008-12-18 National Chiao Tung Univ 柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ｌｅｄ）の発光効率を引き上げる方法
JP2009147140A (ja) * 2007-12-14 2009-07-02 Panasonic Corp 発光素子および発光素子の製造方法
JP2010506744A (ja) * 2006-11-09 2010-03-04 ナノシス・インコーポレイテッド ナノワイヤの配列方法および堆積方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101069A (ja) * 2001-09-25 2003-04-04 Nagoya Industrial Science Research Inst Ｉｉｉ族窒化物量子ドットおよびその製造方法
JP2005522030A (ja) * 2002-03-28 2005-07-21 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ナノワイヤ製造方法及び電子装置
JP2005228936A (ja) * 2004-02-13 2005-08-25 Dongguk Univ 発光ダイオードおよびその製造方法
US20060273328A1 (en) * 2005-06-02 2006-12-07 Nanosys, Inc. Light emitting nanowires for macroelectronics
JP2010506744A (ja) * 2006-11-09 2010-03-04 ナノシス・インコーポレイテッド ナノワイヤの配列方法および堆積方法
JP2008235444A (ja) * 2007-03-19 2008-10-02 Matsushita Electric Works Ltd 半導体発光装置およびそれを用いる照明装置ならびに半導体発光装置の製造方法
JP2008306156A (ja) * 2007-06-11 2008-12-18 National Chiao Tung Univ 柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ｌｅｄ）の発光効率を引き上げる方法
JP2009147140A (ja) * 2007-12-14 2009-07-02 Panasonic Corp 発光素子および発光素子の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KATSUHIRO TOMIOKA ET AL.: "GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si", NANO LETTERS, vol. 10, no. 5, pages 1639 - 1644, XP055131726, DOI: doi:10.1021/nl9041774 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10861696B2 (en) 2010-12-13 2020-12-08 Norwegian University Of Science And Technology Compositions comprising epitaxial nanowires on graphene substrates and methods of making thereof
US10347781B2 (en) 2012-06-21 2019-07-09 Norwegian University Of Science And Technology (Ntnu) Solar cells
US11257967B2 (en) 2012-06-21 2022-02-22 Norwegian University Of Science And Technology (Ntnu) Solar cells
JP2014049736A (ja) * 2012-09-04 2014-03-17 Asahi Kasei Corp 太陽電池及び太陽電池システム
US11261537B2 (en) 2013-06-21 2022-03-01 Norwegian University Of Science And Technology (Ntnu) III-V or II-VI compound semiconductor films on graphitic substrates
US10347791B2 (en) 2015-07-13 2019-07-09 Crayonano As Nanowires or nanopyramids grown on graphitic substrate
US11264536B2 (en) 2015-07-13 2022-03-01 Crayonano As Nanowires or nanopyramids grown on a graphene substrate
US11594657B2 (en) 2015-07-13 2023-02-28 Crayonano As Nanowires/nanopyramids shaped light emitting diodes and photodetectors
US10714337B2 (en) 2015-07-31 2020-07-14 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
US11450528B2 (en) 2015-07-31 2022-09-20 Crayonano As Process for growing nanowires or nanopyramids on graphitic substrates
WO2018012086A1 (fr) * 2016-07-11 2018-01-18 シャープ株式会社 Élément électroluminescent, dispositif électroluminescent, dispositif d'éclairage, rétroéclairage et dispositif d'affichage
US11239391B2 (en) 2017-04-10 2022-02-01 Norwegian University Of Science And Technology (Ntnu) Nanostructure

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