WO2012029194A1 - Polishing device for columnar member and polishing method therefor - Google Patents

Polishing device for columnar member and polishing method therefor Download PDF

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Publication number
WO2012029194A1
WO2012029194A1 PCT/JP2010/067915 JP2010067915W WO2012029194A1 WO 2012029194 A1 WO2012029194 A1 WO 2012029194A1 JP 2010067915 W JP2010067915 W JP 2010067915W WO 2012029194 A1 WO2012029194 A1 WO 2012029194A1
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WO
WIPO (PCT)
Prior art keywords
polishing
workpiece
cylindrical member
elastic body
polishing means
Prior art date
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PCT/JP2010/067915
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French (fr)
Japanese (ja)
Inventor
茂 棚橋
靖雄 野田
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新東工業株式会社
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Application filed by 新東工業株式会社 filed Critical 新東工業株式会社
Priority to JP2011546363A priority Critical patent/JP5565417B2/en
Priority to KR1020127007438A priority patent/KR101601007B1/en
Publication of WO2012029194A1 publication Critical patent/WO2012029194A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/02Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
    • B24B5/04Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces externally
    • B24B5/045Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces externally with the grinding wheel axis perpendicular to the workpiece axis
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/36Single-purpose machines or devices
    • B24B5/37Single-purpose machines or devices for grinding rolls, e.g. barrel-shaped rolls
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/50Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground, e.g. strings

Definitions

  • the present invention relates to a polishing apparatus for polishing a surface layer portion (hereinafter simply referred to as “surface layer portion” unless otherwise specified) of a cylindrical workpiece made of a hard and brittle material.
  • the cylindrical member of the hard and brittle material to be polished of the present invention includes, for example, a silicon block that is a material for obtaining a silicon wafer by slicing with a wire saw, and the silicon block is made of a single crystal.
  • a silicon ingot made of a polycrystal is cut into a cylindrical shape by cutting with a band saw or a wire saw. If the required accuracy regarding the external dimensions after the cutting is high, the surface layer is ground.
  • a single crystal silicon block obtained by a chocolate ski method (CZ method) or a polycrystalline silicon block obtained by a casting method or the like is a silicon wafer that is sliced by a wire saw in the next step. If there are microcracks or micro unevenness in the surface layer portion, the silicon wafer manufactured at the time of slicing is likely to be cracked or chipped. Therefore, in Patent Document 1 and Patent Document 2, the surface layer portion of the silicon block is polished and removed. It is disclosed that minute unevenness (and microcracks) present in the surface layer portion is removed to improve the product yield of the silicon wafer.
  • Patent Document 1 discloses that the surface roughness Ry of 10 to 20 ⁇ m before polishing is flattened to 3 to 4 ⁇ m by polishing and removing the surface layer portion of the silicon block of 50 to 100 ⁇ m to 200 ⁇ m from the surface.
  • Patent Document 3 is disclosed as a silicon block polishing apparatus.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2005-347712
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2002-252188
  • Patent Document 3 Japanese Patent Application Laid-Open No. 2009-233794
  • Patent Documents 1 to 3 each disclose a method and apparatus for polishing a surface layer portion of a silicon block of a quadrangular columnar member, and perform polishing processing of a surface layer portion of a cylindrical member to be performed by the present invention. No device is disclosed.
  • the present invention provides a polishing apparatus capable of satisfying the above-mentioned requirements and capable of polishing a surface layer portion of a hard and brittle material such as a cylindrical silicon block, which is a workpiece, with a single apparatus, and a polishing method therefor The purpose is to provide.
  • a polishing apparatus for polishing a surface layer portion of an outer peripheral surface of a cylindrical workpiece, the clamping device being connected to a rotating means of the workpiece and sandwiching both end faces of the workpiece.
  • a moving means for relatively moving in the direction, a height position detecting means for detecting the height position of the finished product before polishing and the workpiece before polishing, and the height position and processing conditions are input, Control means for performing a polishing process by calculation, and the calculation is a calculation of a difference between a height position of the finished product of polishing process and a height position of the workpiece before polishing, or an input processing condition Calculation to set other machining conditions, or Is any combination of these, using a technical means of.
  • the cylindrical member polishing apparatus according to the first aspect, wherein the polishing means is a polishing brush, and the polishing brush has a bristle containing abrasive grains at the bottom of the polishing brush.
  • the cylindrical member polishing apparatus according to the first invention, wherein the polishing means is a polishing brush, and the polishing brush bundles a plurality of bristle materials containing abrasive grains.
  • the base part of the polishing tool has a structure in which a plurality of the base parts of the polishing tool are installed on the polishing tool mounting plate is used.
  • the cylindrical member polishing apparatus according to the first invention, wherein the polishing means is a polishing brush, and the polishing brush has an elastic body containing abrasive grains of the polishing brush.
  • the technical means of having a structure arranged in a ring shape at the bottom is used.
  • the cylindrical member polishing apparatus according to any one of the second to fourth aspects, wherein a plurality of the polishing means are provided along the axis of the cylindrical workpiece.
  • the technical means that they are arranged in series is used.
  • the cylindrical member polishing apparatus according to any one of the second to fourth aspects, wherein the polishing means is disposed within the same plane of the circular cross section of the workpiece.
  • the first polishing means and the second polishing means are arranged, and the shafts of the first polishing means and the second polishing means are arranged so as to coincide with the radial direction of the workpiece, and the first polishing means
  • a technical means is used in which the axis of the means and the axis of the second polishing means are arranged so as to intersect at the center of the cross section of the workpiece so as to form a predetermined angle ⁇ .
  • the cylindrical member polishing apparatus according to the sixth invention, wherein the first polishing means and the second polishing means are respectively provided along the axis of the cylindrical workpiece.
  • the technical means that a plurality are arranged in series is used.
  • the cylindrical member polishing apparatus according to the fifth or seventh invention, wherein the particle size of the abrasive grains mixed with the bristle material or the elastic body used in the polishing means is F180. ⁇ # 2000, two or more kinds of polishing means having hair materials or elastic bodies having different particle sizes are selected, and polishing means having different abrasive particle sizes are selected from coarse to fine. A technical means is used that is connected along the axial center of a cylindrical workpiece so as to polish in order.
  • the tenth and eleventh invention is the cylindrical member polishing apparatus according to the fifth or seventh invention, wherein the particle size of the abrasive grains mixed with the bristle material or elastic body used in the polishing means is F180.
  • a technical means is used in which polishing means having a hair material or an elastic body having a particle size substantially equal to # 2000 is continuously provided along the axis of a cylindrical workpiece.
  • a cylindrical member polished by the cylindrical member polishing apparatus according to the first invention wherein microcracks existing in a surface layer of the workpiece of 100 ⁇ m or less are removed and polished.
  • the thirteenth invention uses the technical means of the columnar member according to the twelfth invention, wherein the columnar member is a silicon block or ceramics.
  • a fourteenth aspect of the invention there is provided a method for polishing a cylindrical member by the cylindrical member polishing apparatus according to the first aspect of the invention, wherein the workpiece sandwiched by the clamp means is rotated by the rotating means. , Contact and rotate the tip of the polishing means to the outer peripheral surface of the workpiece, And the technical means of performing polishing by moving the polishing means relative to the workpiece is used.
  • a method of polishing a cylindrical member by the cylindrical member polishing apparatus according to the fifth or seventh invention wherein the bristle material or elastic body used in the polishing means is used.
  • the abrasive grains to be mixed are F180 to # 2000, and two or more kinds of polishing means having hair materials or elastic bodies having different particle sizes are selected, and the polishing means having different abrasive grain sizes are selected as the abrasive grain sizes. Is technically connected and polished along the axial center of a cylindrical workpiece so that polishing is performed in the order of “rough” to “fine”.
  • a method for polishing a cylindrical member by the cylindrical member polishing apparatus according to the fifth or seventh invention wherein the bristle material or elastic body used in the polishing means is used.
  • Abrasive means having a bristle material or an elastic body having a particle size of F180 to # 2000 mixed with substantially the same particle size is continuously provided along the axis of the cylindrical workpiece to be polished. The technical means to do is used.
  • the polishing means comes into contact with the outer peripheral surface of a cylindrical workpiece, and the workpiece rotates by the rotating means, whereby the surface layer portion of the workpiece can be polished. Further, since the workpiece sandwiched between the clamping means is rotated in the circumferential direction by the rotating means (hereinafter referred to as rotating means (for workpiece)), the surface layer portion of the workpiece is made uniform. It can be polished. Further, during this polishing process, the polishing means is moved relative to the workpiece in the longitudinal direction of the workpiece, that is, in a direction orthogonal to the substantially circular cross section, so that the entire workpiece is Can be uniformly polished.
  • substantially circular includes not only a circular shape but also an ellipse or the like, which includes a slightly non-circular state caused by distortion in the manufacturing process of the workpiece (columnar member).
  • a standard piece (hereinafter referred to as “master work”) of the finished polishing process is detected by the height position detecting means and stored by the polishing means by the polishing means, and stored.
  • the height position of the workpiece is detected, the difference between the height position detected by the master workpiece and the height position detected by the workpiece is calculated by the control means, and the tip of the polishing means is calculated based on the calculation result.
  • the “input” described in the first invention is information input (stored) to the control means manually (operator), information automatically input (stored) to the control means, manual or / and automatic Any of the information input (stored) after the calculation based on the information input (stored) in (1) is included.
  • a polishing brush composed of a bristle material containing abrasive grains as the polishing means, a sufficient polishing force can be secured and damage to the workpiece can be suppressed.
  • the hair material is more flexible than other polishing methods such as polishing with a polishing stone, etc., so that damage to the workpiece can be suppressed, and the hair material contains abrasive grains. Therefore, a sufficient polishing power can be secured.
  • the length of the hair material exposed from the bottom of the polishing means can be adjusted by arbitrarily setting the position (vertical direction) of the polishing tool mounting plate on which the polishing tool in which a plurality of the hair materials are bundled is implanted. Can do. That is, the length of the hair material that is always exposed can be kept constant by moving the position of the polishing tool mounting plate downward according to the wear of the hair material.
  • the object that contacts the workpiece during polishing is an elastic body, damage due to the workpiece contacting with the polishing brush can be reduced.
  • the grain size of the abrasive grains mixed with the bristle material is F180 to # 2000 (JIS R6001: 1998), and one polishing means is a polishing brush in which substantially the same particle diameter is mixed. That is, the polishing means having a bristle or elastic body having a larger particle size has a higher polishing ability and can accurately remove microcracks existing in the surface layer portion of the workpiece, and the bristle or elastic body having a smaller particle size. As the polishing means is provided, the surface layer can be finely polished to remove irregularities.
  • the polishing means is appropriately selected according to the type and purpose of the workpiece and processed. be able to. That is, select two or more kinds of polishing means having hair materials or elastic bodies having different particle sizes, and the particle sizes contained in the hair materials or elastic bodies provided in the polishing means are in the order of "rough" to "fine", By arranging the workpieces so as to pass and process, microcracks and irregularities in the surface layer portion of the workpiece can be removed by a single polishing process.
  • the processing is performed only with “thin”), and the grain size of the abrasive grains contained in the bristle material or the elastic body provided in the two or more polishing means provided in series.
  • the processing time can be shortened by making all the polishing means substantially the same.
  • the shaft cores of the first polishing means and the second polishing means are to be processed.
  • the axis of the first polishing means and the axis of the second polishing means intersect at the center of the cross section of the workpiece so as to form a predetermined angle ⁇ .
  • a cylindrical member having 100 ⁇ m microcracks removed from the surface layer and having a surface roughness Ry of 3 ⁇ m or less can be obtained.
  • a hard and brittle material such as a silicon block or ceramics can be suitably used.
  • FIG. 2A is a partially cutaway cross-sectional view seen from the front
  • FIG. 2B is a bottom view. It is explanatory drawing showing the other example of the grinding
  • FIG. 3A is a schematic diagram in which a hair material is planted at the bottom
  • FIG. 3B is a schematic diagram in which an elastic body is installed at the bottom. It is a flowchart for demonstrating 1st Embodiment in this invention. It is a flowchart for demonstrating 1st Embodiment in this invention.
  • the polishing apparatus according to the first embodiment is a polishing apparatus for a cylindrical member provided with two or more (three) polishing means having different polishing roughnesses.
  • FIG. 1 shows a polishing unit 1 stopped at a position before polishing start at the right end in the drawing, and clamping means 5 disposed on the left and right of the workpiece W indicated by a one-dot chain line.
  • 6A a gripping portion 6A attached to the tip of a reference-side clamp shaft 12A that slides by driving the cylinder of the clamp means 5, and a right-hand side of the workpiece W, and a driven-side clamp shaft 12B.
  • tip is shown.
  • the gripping portions 6A and 6B are disposed at the retracted positions, respectively, and show an open state in which the workpiece W is not sandwiched.
  • the polishing unit 1 detects the height position of three polishing means 2 each connected to a rotating means (for polishing means) 2a and a processing surface (outer peripheral surface) P of the workpiece W before starting polishing. And a height position detecting means 3 for this purpose.
  • the polishing unit is transferred from the left side to the right side in FIG. 1 when polishing is performed by a transfer unit (not shown) that transfers the polishing unit 2 relative to the workpiece W.
  • the polishing means 2 is arranged in order from the right for rough polishing, medium polishing, and finish polishing. That is, the grain size of the abrasive grains contained in the bristle provided in the polishing means is “rough” ⁇ “fine” in order from the right.
  • the height position detection means 3 is provided on the right side of the rough polishing means 2.
  • the rough polishing polishing means 2 in the above-described triple polishing means 2 is provided for the purpose of scraping most of the microcracks existing in the surface layer portion with a large polishing ability
  • the intermediate polishing polishing means 2 is a band saw or a wire saw. It is provided for the purpose of removing irregularities on the surface generated when cutting and refining the surface roughened by the rough polishing, and the polishing means 2 for final polishing is provided for the purpose of final adjustment of the surface roughness. If the removal of the surface irregularities and the adjustment of the surface roughness are completed at the intermediate polishing stage, the polishing means 2 may be duplicated without using the polishing means 2 for final polishing.
  • the master work Prior to processing the workpiece W, the master work is used to set the height position at which the polishing processing of the polishing means 2 is started by the height position detection means 3. In order to set the height position, first, both ends of the master work are clamped by the clamp means 5. When the master work is sandwiched by the clamping means 5, it is preferable to place it on a base (not shown) having a V-shaped groove, for example. By installing the master work in the groove, the center of the master work in the left-right direction in the drawing can always be substantially the same position. Furthermore, it is more preferable that the base has adjustment means (not shown) for finely adjusting the installation position in the vertical direction in the figure.
  • the master work is placed on the base, and the clamp shafts 12A and 12B of the clamp means 5 are advanced, so that the gripping portions 6A and 6B sandwich the both ends of the master work. Thereafter, the base is removed.
  • the installation and removal of the base having the V-shaped groove is performed by moving the base up and down in the drawing. (See Figure 4)
  • the clamp means 5 is rotated by a rotating means (for a workpiece) (not shown), that is, rotates around the axis of the clamp shafts 12A and 12B. Therefore, the clamp shaft 12A and the clamp shaft 12A viewed from the end face side of the master workpiece
  • the centering adjustment must be made so that the axis of the gripping portions 6A and 6B at the tip of 12B and the axis of the master work coincide.
  • the master work is held while performing this adjustment by the adjusting means. After using the master work placed at the machining position in this way and measuring the height position of the outer peripheral surface of the master work by the height position detecting means 3, the master work is removed from the clamping means 5.
  • the height position detection means 3 provided in the polishing unit 1 measures the outer circumferential surface height position H 1 of the master work, then rotating the master work (for example, 180 degrees) is to measure the height position of H 2 at a rotational state. It calculates a difference of an H 1 and H 2, if H 1 and H 2 is not substantially the same, respectively retracting the clamp shaft 12A and 12B after raising the base to release the holding of the master workpiece.
  • the polishing unit 1 moves to the right in FIG. Then, the base is raised, the clamp shafts 12A and 12B are retracted to release the master work, and the master work is placed on the V-shaped groove of the base. Thereafter, the master work is replaced with the workpiece W, and the centering process is performed in the same manner as in the master work.
  • the polishing unit is moved to the left side in FIG.
  • the outer peripheral surface height position H of the master workpiece is stored in the control means by the master workpiece centering step, and the outer peripheral surface height position h of the workpiece W is stored in the control device by the centering step of the workpiece W. .
  • Processing conditions rotation speed of the polishing means 2, rotation speed of the workpiece W, transfer speed of the polishing unit 1, cutting depth (with respect to the processing surface P of the workpiece W), and the outer peripheral surface previously input to the control means Arithmetic processing is performed based on the height positions H and h, and the polishing unit 1 is moved in the vertical direction, that is, in the distance direction between the polishing unit and the processing surface P.
  • the polishing means 2 and the workpiece W are rotated by the control means 13 at a predetermined rotational speed based on the processing conditions. Thereafter, similarly, the polishing unit 1 is moved to the right side in FIG. 1 by the control means 13 at a predetermined moving speed. By this movement, the workpiece surface P of the workpiece W and the tip of the rotating polishing means 2 come into contact with each other, and polishing is performed. As described above, since the polishing means 2 are arranged in the order of “rough” ⁇ “fine” in order from the right to the left in FIG. 1, this movement causes “rough polishing” ⁇ “medium polishing” ⁇ “finish polishing”. Is done.
  • the base is raised, and thereafter the clamping means 12A and 12B are retracted, the clamping of the workpiece W is released, and the workpiece W is taken out. This completes the polishing process.
  • polishing is similarly performed through a clamping process of the workpieces and a centering process of the workpieces. That is, by first measuring the height position of the master work, a plurality of workpieces W can be polished thereafter. (See Figs. 6 and 7)
  • the polishing unit 1 is moved in the horizontal direction in the figure, but the workpiece W may be transferred, or both the polishing unit 1 and the workpiece W may be transferred.
  • the machining conditions are manually input to the control means.
  • the machining conditions that have not been input to the control means are determined based on the manually input machining conditions and the automatically input (stored) outer peripheral surface height position.
  • the polishing process may be performed by calculating the above.
  • the moving speed of the workpiece W is controlled by inputting the cutting amount of the tip of the polishing means with respect to the processing surface P of the workpiece (hereinafter simply referred to as “the cutting amount”) and the rotation speed of the polishing means 2. It may be calculated by the means 13, or the cutting amount may be calculated by the control means 13 from other processing conditions and height positions. Then, polishing can be performed based on these calculation results.
  • the processing conditions to be input are not limited to the items in this embodiment.
  • the type of the polishing means 2 and the state of the workpiece may be input, and the calculation by the control means 13 may be combined based on these.
  • polishing brush that is the polishing means 2
  • a bristle material 10a made of synthetic resin such as nylon mixed with abrasive grains is bundled to form a polishing tool 10.
  • a base portion of the polishing tool 10 is connected to a rotating means (for polishing tool) 2a and is detachably attached to a polishing tool mounting plate 11 which rotates horizontally, and a lower end rotates in contact with a processing surface P of the workpiece W.
  • the polishing tool 10 can be removed from the polishing tool mounting plate 11 and replaced with a new polishing tool 10.
  • the polishing brush as the polishing means 2 is not limited to that shown in FIG.
  • polishing tool 10 made of the bristle material 10a mixed with abrasive grains is directly attached and fixed to the polishing tool mounting plate 11, and the polishing brush is polished.
  • the polishing tool mounting plate 11 may be replaced together, or the polishing tool 10 is not used, and a bristle material 10a made of synthetic resin such as nylon containing abrasive grains is attached to the bottom of the polishing means 2 (See FIG. 3 (A)).
  • an elastic body 10b made of a synthetic resin containing abrasive grains may be arranged in a ring shape at the bottom of the polishing means (see FIG. 3B).
  • the elastic body 10b in this case is, for example, a resin bulk body having a relatively soft hardness, a resin bulk body such as polyurethane or urethane having a large number of bubbles inside, and a fibrous elastic body entangled with each other. It may be a thing.
  • the resin In a bulk body of a resin having a relatively soft hardness, the resin itself functions as a buffer material. In the bulk body of resin having bubbles, the bubbles inside serve as a buffer material. In an elastic body that contains abrasive grains and is entangled with each other, the elastic bodies are entangled with each other, so that air is included in these aggregates, and this air layer functions as a cushioning material. In any case, the type of synthetic resin, the content of abrasive grains, and the like are appropriately selected so that the elastic body 10b maintains an appropriate elastic force when it contacts the workpiece. (See FIG. 3. In both FIGS.
  • the grain size of the abrasive grains mixed in the bristle material or elastic body is preferably selected from the range of F180 to # 2000 (the definition of the grain size of the abrasive grains is based on JIS standard R6001: 1998).
  • the workpiece W is a cylindrical single crystal silicon block ( ⁇ 175 mm ⁇ 500 mm), and the surface layer portion of the workpiece W is processed using the polishing apparatus of the present invention and exists in the surface layer portion. Micro-cracks and surface irregularities are removed to reduce the surface roughness and evaluate the polishing effect.
  • a silicon wafer is formed by slicing the silicon block with a wire saw, the silicon wafer is cracked or chipped. The results of evaluation tests that were able to reduce the incidence of defective products due to the above will be described.
  • Micro-cracks having a depth of 80 to 100 ⁇ m are present on the surface layer of the workpiece W before polishing, and the surface roughness is (Ry) 9 to 11 ⁇ m (Ry is defined by JIS standard B0601: 1994).
  • the silicon block was cut (sliced) with a wire saw to form a silicon wafer, the incidence of defective products due to cracks, chips, etc. was 5 to 6%.
  • the silicon block which is the workpiece (W) is polished using the polishing apparatus described in the first embodiment to remove microcracks and irregularities, and the surface roughness is reduced, and then the silicon block is processed into a wire saw.
  • the results of reducing the incidence of defective products due to cracks and chips when slicing and forming a silicon wafer will be described.
  • the maximum depth of the microcracks is 3.0 ⁇ m or less, preferably 2.3 ⁇ m or less.
  • the maximum depth is 3.0 ⁇ m or more, the incidence of defective products increases.
  • the maximum depth is 2.3 ⁇ m or less, there is little influence on the occurrence rate of defective products due to cracks / chips when sliced into a thickness of several tens of ⁇ m to form a silicon wafer. In this evaluation test, the maximum depth was 0.9 ⁇ m, which was significantly less than 2.3 ⁇ m, which affects the incidence of defective products.
  • the polishing apparatus according to the second embodiment does not require multi-stage processing such as “rough” ⁇ “thin”, and has an apparatus configuration used when a surface required by one-stage processing can be obtained.
  • multi-stage processing such as “rough” ⁇ “thin”
  • the polishing means 10 (polishing brush) is the “ Processing can be performed only by “for intermediate polishing” or “for final polishing”. In such a case, only one polishing means 10 including a hair material or an elastic body containing abrasive grains having a particle size suitable for the purpose of polishing is installed and processed.
  • processing time can be shortened by making the particle sizes included in the hair material or the elastic body provided in the triple polishing means 2 in the first embodiment substantially the same.
  • the polishing apparatus according to the third embodiment has an apparatus configuration in which the polishing means 2 is arranged so as to shorten the processing time.
  • the polishing means 2 is arranged so as to shorten the processing time.
  • the first polishing means 21a and the second polishing means 22a are arranged in the plane of the same cross section (circular shape) of the workpiece W.
  • the shaft centers of the first polishing means 21a and the second polishing means 22a are arranged so as to coincide with the radial direction of the workpiece W, and the first polishing means 21a and the second polishing means 22a are mutually connected.
  • the axis of the first polishing means 21a and the axis of the second polishing means 22a intersect at the center of the cross section of the workpiece W so as to form a predetermined angle ⁇ . Is arranged. (Refer to FIG.
  • This angle ⁇ can be arbitrarily set as long as the first polishing means 21a and the second polishing means 22a do not interfere with each other, but the angle ⁇ is set to 180 ° and the first It is also possible to arrange so that the axis of the polishing means 21a and the axis of the second polishing means 22a completely coincide with each other and face each other. By adopting such a configuration, the workpiece W is polished while rotating in the circumferential direction, so that the processed surface of the workpiece is two places, the first polishing means 21a and the second polishing means 22a. In this case, the processing time is shortened.
  • FIG. 9 (the right diagram in FIG. 9 is a view of the workpiece W as viewed from the front, The figure on the left is a view of the workpiece W as seen from the left side.)
  • the first polishing means 21a and the second polishing means 22a are connected in the longitudinal direction of the workpiece W, or It is also possible to arrange as a triple (FIG. 9 shows a state of triple arrangement). In this case, in order from the left along the longitudinal direction of the workpiece W, the first polishing means 21a and the second polishing means 22a in the first row, the first polishing means 21b and the second polishing in the second row.
  • the polishing means 22b and the first polishing means 21c and the second polishing means 22c in the third row are arranged.
  • the abrasive grains contained in the hair material or the elastic body provided in each polishing means are substantially the same in the polishing means 21a and 22a, the polishing means 21b and 22b, and the polishing means 21c and 22c.
  • the polishing power should be approximately the same.
  • the particle size can be made substantially the same.
  • the present invention is not limited to this, and an arbitrary number of polishing means may be arranged in accordance with the installation space, the target processing time, etc. as long as the polishing means do not interfere with each other.
  • the silicon block is ground has been described as an example.
  • the present invention is not limited to the silicon block, and is suitable for all hard and brittle materials such as ceramics. Can be used.
  • the particle size is substantially the same of the abrasive grains is a concept including an abrasive particle of "a particle size capable of obtaining an equivalent polishing effect" in addition to the abrasive particles of "the same particle size".
  • Polishing unit 2 Polishing means 2a Rotating means (for polishing tool) 3 Height position detection means 5 Clamping means 6A Grip part (reference position side) 6B Grip part (driven side) DESCRIPTION OF SYMBOLS 10 Polishing tool 10a Hair material 10b Elastic body 11 Polishing tool mounting plate 12A Clamp axis

Abstract

Provided are an inexpensive polishing device having high polishing capability for removing minute cracks present in a columnar surface layer portion produced from a hard and brittle material and fine polishing capability for removing asperities on the surface to obtain finer surface roughness, and an polishing method therefor. A polishing device for a columnar member is provided with: a clamping means coupled to a rotating means for an object to be processed to clamp both end surfaces of the object to be processed; a polishing means for performing polishing processing with the edge of a polishing tool thereof rotating in contact with a processing surface; a moving means for relatively moving the polishing means in the longitudinal direction orthogonal to the cross-sectional direction of the object to be processed with respect to the object to be processed; a height position detecting means for storing the height position of the processing surface of the object to be processed, the height position being detected before the polishing processing; and a control means for performing the polishing processing by subjecting the height position stored by the position detecting means and the amount of cutting by the edge of the polishing means to arithmetic processing.

Description

円柱状部材の研磨装置およびその研磨方法Cylindrical member polishing apparatus and polishing method thereof
 本発明は、硬脆材料からなる円柱状の被加工物の外周面の表層部(以下、特に断りがない限り単に「表層部」と記す)を研磨する研磨装置に関するものである。 The present invention relates to a polishing apparatus for polishing a surface layer portion (hereinafter simply referred to as “surface layer portion” unless otherwise specified) of a cylindrical workpiece made of a hard and brittle material.
 本発明の研磨対象となる硬脆材料の円柱状部材には、例えば、ワイヤソーによりスライス加工をしてシリコンウエハを得るための材料となるシリコンブロックがあって、該シリコンブロックは、素材が単結晶、あるいは多結晶からなるシリコンインゴットをバンドソーもしくはワイヤソーにより切断して円柱形状に形成されるものであるが、前記切断後の外形寸法に関する要求精度が高い場合はその表層面を研削処理する。 The cylindrical member of the hard and brittle material to be polished of the present invention includes, for example, a silicon block that is a material for obtaining a silicon wafer by slicing with a wire saw, and the silicon block is made of a single crystal. Alternatively, a silicon ingot made of a polycrystal is cut into a cylindrical shape by cutting with a band saw or a wire saw. If the required accuracy regarding the external dimensions after the cutting is high, the surface layer is ground.
 チョコラルスキー法(CZ法)などで得られる単結晶シリコンブロックや、鋳造法などで得られる多結晶シリコンブロックは、次工程にてワイヤソーによりスライス加工されてシリコンウエハが製造されるものであるが、表層部にマイクロクラックや微小凹凸が存在するとスライス加工時に製造されたシリコンウエハの割れ・欠けが発生し易いために、特許文献1および特許文献2において、シリコンブロックの表層部を研磨除去することによって前記表層部に存在する微小凹凸(およびマイクロクラック)を除去し、シリコンウエハの製品歩留まりの向上を図ることが開示されている。特に、特許文献1においては、表面から50~100μm以上、200μm以下のシリコンブロックの表層部を研磨除去することによって、研磨前の表面粗さRy10~20μmを3~4μmに平坦化することが開示されている。また、シリコンブロックの研磨装置として特許文献3が開示されている。 A single crystal silicon block obtained by a chocolate ski method (CZ method) or a polycrystalline silicon block obtained by a casting method or the like is a silicon wafer that is sliced by a wire saw in the next step. If there are microcracks or micro unevenness in the surface layer portion, the silicon wafer manufactured at the time of slicing is likely to be cracked or chipped. Therefore, in Patent Document 1 and Patent Document 2, the surface layer portion of the silicon block is polished and removed. It is disclosed that minute unevenness (and microcracks) present in the surface layer portion is removed to improve the product yield of the silicon wafer. In particular, Patent Document 1 discloses that the surface roughness Ry of 10 to 20 μm before polishing is flattened to 3 to 4 μm by polishing and removing the surface layer portion of the silicon block of 50 to 100 μm to 200 μm from the surface. Has been. Patent Document 3 is disclosed as a silicon block polishing apparatus.
  特許文献1: 特開2005-347712号公報
  特許文献2: 特開2002-252188号公報
  特許文献3: 特開2009-233794号公報
Patent Document 1: Japanese Patent Application Laid-Open No. 2005-347712 Patent Document 2: Japanese Patent Application Laid-Open No. 2002-252188 Patent Document 3: Japanese Patent Application Laid-Open No. 2009-233794
 特許文献1ないし特許文献3はいずれも、は四角柱状部材のシリコンブロックの表層部の研磨方法および研磨装置についての開示であり、本願発明が行おうとしている円柱部材の表層部の研磨加工を行う装置については開示されていない。 Patent Documents 1 to 3 each disclose a method and apparatus for polishing a surface layer portion of a silicon block of a quadrangular columnar member, and perform polishing processing of a surface layer portion of a cylindrical member to be performed by the present invention. No device is disclosed.
 本発明は、前記の要求事項を満足させるとともに被加工物である円柱状のシリコンブロック等の硬脆材料の表層部の研磨加工を1台の装置で研磨を可能とした研磨装置とその研磨方法を提供することを目的とする。 The present invention provides a polishing apparatus capable of satisfying the above-mentioned requirements and capable of polishing a surface layer portion of a hard and brittle material such as a cylindrical silicon block, which is a workpiece, with a single apparatus, and a polishing method therefor The purpose is to provide.
 第1の発明では、円柱状の被加工物の外周面の表層部を研磨する研磨装置であって、被加工物の回転手段に連結し、前記被加工物の両端面を挟持するクランプ手段と、被加工物の外周面に研磨手段の先端が接触回転しながら研磨加工する研磨手段と、前記被加工物に対し前記研磨手段を、前記被加工物の略円形である断面方向と直交する長手方向に相対的に移動させる移動手段と、研磨加工完成品および研磨加工前の被加工物の高さ位置を検出させる高さ位置検出手段と、前記高さ位置および加工条件が入力され、これを演算して研磨加工を行う制御手段と、を備え、前記演算は、前記研磨加工完成品の高さ位置と前記研磨前の被加工物の高さ位置の差の演算、または入力された加工条件より他の加工条件を設定するための演算、もしくはそれらの組み合わせのいずれかである、という技術的手段を用いる。 In the first invention, there is provided a polishing apparatus for polishing a surface layer portion of an outer peripheral surface of a cylindrical workpiece, the clamping device being connected to a rotating means of the workpiece and sandwiching both end faces of the workpiece. A polishing means for polishing while the tip of the polishing means contacts and rotates on the outer peripheral surface of the workpiece; and the longitudinal direction perpendicular to the cross-sectional direction of the workpiece, the polishing means for the workpiece. A moving means for relatively moving in the direction, a height position detecting means for detecting the height position of the finished product before polishing and the workpiece before polishing, and the height position and processing conditions are input, Control means for performing a polishing process by calculation, and the calculation is a calculation of a difference between a height position of the finished product of polishing process and a height position of the workpiece before polishing, or an input processing condition Calculation to set other machining conditions, or Is any combination of these, using a technical means of.
 第2の発明では、第1の発明に記載の円柱状部材の研磨装置であって、前記研磨手段が研磨ブラシであって、該研磨ブラシは砥粒を含有した毛材が該研磨ブラシの底部にリング状に複数本植設された構造である、という技術的手段を用いる。 According to a second aspect of the present invention, there is provided the cylindrical member polishing apparatus according to the first aspect, wherein the polishing means is a polishing brush, and the polishing brush has a bristle containing abrasive grains at the bottom of the polishing brush. The technical means that a plurality of rings are planted in a ring shape is used.
 第3の発明では、第1の発明に記載の円柱状部材の研磨装置であって、前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有した毛材を複数本束ねた研磨具の基部が研磨具取付プレートに複数本植設された構造を有する、という技術的手段を用いる。 In a third invention, the cylindrical member polishing apparatus according to the first invention, wherein the polishing means is a polishing brush, and the polishing brush bundles a plurality of bristle materials containing abrasive grains. The technical means that the base part of the polishing tool has a structure in which a plurality of the base parts of the polishing tool are installed on the polishing tool mounting plate is used.
 第4の発明では、第1の発明に記載の円柱状部材の研磨装置であって、前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有した弾性体が該研磨ブラシの底部にリング状に配置された構造を有する、という技術的手段を用いる。 According to a fourth invention, there is provided the cylindrical member polishing apparatus according to the first invention, wherein the polishing means is a polishing brush, and the polishing brush has an elastic body containing abrasive grains of the polishing brush. The technical means of having a structure arranged in a ring shape at the bottom is used.
 第5の発明では、第2ないし第4の発明のいずれか1つに記載の円柱状部材の研磨装置であって、前記研磨手段が、円柱状の被加工物の軸芯に沿って複数個連設して配置されている、という技術的手段を用いる。 According to a fifth aspect of the invention, there is provided the cylindrical member polishing apparatus according to any one of the second to fourth aspects, wherein a plurality of the polishing means are provided along the axis of the cylindrical workpiece. The technical means that they are arranged in series is used.
 第6の発明では、第2ないし第4の発明のいずれか1つに記載の円柱状部材の研磨装置であって、前記研磨手段が、被加工物の円形断面の同一面内において配置された第1の研磨手段と第2の研磨手段からなり、第1の研磨手段と第2の研磨手段の軸芯は、被加工物の半径方向に一致するように配置されており、第1の研磨手段の軸芯と第2の研磨手段の軸芯は、所定の角度θを構成するように、被加工物の断面中心で交わるように配置されている、という技術的手段を用いる。 According to a sixth aspect of the invention, there is provided the cylindrical member polishing apparatus according to any one of the second to fourth aspects, wherein the polishing means is disposed within the same plane of the circular cross section of the workpiece. The first polishing means and the second polishing means are arranged, and the shafts of the first polishing means and the second polishing means are arranged so as to coincide with the radial direction of the workpiece, and the first polishing means A technical means is used in which the axis of the means and the axis of the second polishing means are arranged so as to intersect at the center of the cross section of the workpiece so as to form a predetermined angle θ.
 第7の発明では、第6の発明に記載の円柱状部材の研磨装置であって、前記第1の研磨手段と第2の研磨手段が、円柱状の被加工物の軸芯に沿って各々複数個連設して配置されている、という技術的手段を用いる。 According to a seventh invention, there is provided the cylindrical member polishing apparatus according to the sixth invention, wherein the first polishing means and the second polishing means are respectively provided along the axis of the cylindrical workpiece. The technical means that a plurality are arranged in series is used.
 第8、9の発明では、第5または第7の発明に記載の円柱状部材の研磨装置であって、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、砥粒の粒度が異なる研磨手段が、砥粒の粒度が「粗」から「細」の順に研磨加工するように、円柱状の被加工物の軸芯に沿って連設されている、という技術的手段を用いる。 In the eighth and ninth inventions, the cylindrical member polishing apparatus according to the fifth or seventh invention, wherein the particle size of the abrasive grains mixed with the bristle material or the elastic body used in the polishing means is F180. ~ # 2000, two or more kinds of polishing means having hair materials or elastic bodies having different particle sizes are selected, and polishing means having different abrasive particle sizes are selected from coarse to fine. A technical means is used that is connected along the axial center of a cylindrical workpiece so as to polish in order.
 第10, 11の発明では、第5または第7の発明に記載の円柱状部材の研磨装置であって、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が略同一なる毛材または弾性体を有する研磨手段が、円柱状の被加工物の軸芯に沿って連設されている、という技術的手段を用いる。 The tenth and eleventh invention is the cylindrical member polishing apparatus according to the fifth or seventh invention, wherein the particle size of the abrasive grains mixed with the bristle material or elastic body used in the polishing means is F180. A technical means is used in which polishing means having a hair material or an elastic body having a particle size substantially equal to # 2000 is continuously provided along the axis of a cylindrical workpiece.
 第12の発明では、第1の発明に記載の円柱状部材の研磨装置によって研磨加工された円柱状部材であって、被加工物の表層より100μm以下に存在するマイクロクラックが除去され、かつ研磨加工面の表面粗さRyが3μm以下とされている、という技術的手段を用いる。 In a twelfth invention, a cylindrical member polished by the cylindrical member polishing apparatus according to the first invention, wherein microcracks existing in a surface layer of the workpiece of 100 μm or less are removed and polished. The technical means that the surface roughness Ry of the processed surface is 3 μm or less is used.
 第13の発明では、第12の発明に記載の円柱状部材であって、前記円柱状部材はシリコンブロックまたはセラミックスである、という技術的手段を用いる。 The thirteenth invention uses the technical means of the columnar member according to the twelfth invention, wherein the columnar member is a silicon block or ceramics.
 第14の発明では、第1の発明に記載の円柱状部材の研磨装置によって円柱状部材を研磨加工する方法であって、前記クランプ手段に挟持された被加工物を前記回転手段によって回転させると共に、
 前記研磨手段の先端を該被加工物の外周面に接触および回転をさせ、
 かつ該研磨手段を該被加工物に対して相対的に移動させることで研磨加工を行う、という技術的手段を用いる。
In a fourteenth aspect of the invention, there is provided a method for polishing a cylindrical member by the cylindrical member polishing apparatus according to the first aspect of the invention, wherein the workpiece sandwiched by the clamp means is rotated by the rotating means. ,
Contact and rotate the tip of the polishing means to the outer peripheral surface of the workpiece,
And the technical means of performing polishing by moving the polishing means relative to the workpiece is used.
 第15、16の発明では、第5または第7の発明に記載の円柱状部材の研磨装置によって円柱状部材を研磨加工する方法であって、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、砥粒の粒度が異なる研磨手段を、砥粒の粒度が「粗」から「細」の順に研磨加工するように、円柱状の被加工物の軸芯に沿って連設して研磨する、という技術的手段を用いる。 In the fifteenth and sixteenth inventions, there is provided a method of polishing a cylindrical member by the cylindrical member polishing apparatus according to the fifth or seventh invention, wherein the bristle material or elastic body used in the polishing means is used. The abrasive grains to be mixed are F180 to # 2000, and two or more kinds of polishing means having hair materials or elastic bodies having different particle sizes are selected, and the polishing means having different abrasive grain sizes are selected as the abrasive grain sizes. Is technically connected and polished along the axial center of a cylindrical workpiece so that polishing is performed in the order of “rough” to “fine”.
 第17、18の発明では、第5または第7の発明に記載の円柱状部材の研磨装置によって円柱状部材を研磨加工する方法であって、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が略同一なる毛材または弾性体を有する研磨手段を、円柱状の被加工物の軸芯に沿って連設して研磨する、という技術的手段を用いる。 In the seventeenth and eighteenth inventions, there is provided a method for polishing a cylindrical member by the cylindrical member polishing apparatus according to the fifth or seventh invention, wherein the bristle material or elastic body used in the polishing means is used. Abrasive means having a bristle material or an elastic body having a particle size of F180 to # 2000 mixed with substantially the same particle size is continuously provided along the axis of the cylindrical workpiece to be polished. The technical means to do is used.
 前記研磨手段は円柱状の被加工物の外周面に接触すると共に回転手段によって被加工物が回転を行うことで、該被加工物の表層部を研磨加工することができる。また、クランプ手段に挟持された該被加工物は前記回転手段(以降、回転手段(被加工物用)と記す)により円周方向に回転を行うので、該被加工物の表層部を均一に研磨加工することができる。さらに、この研磨加工の際、該研磨手段を該被加工物に対して相対的に被加工物の長手方向、すなわち略円形である断面と直交する方向に移動することで、該被加工物全体を均一に研磨加工することができる。略円形とは、円形のみならず楕円等、該被加工物(円柱状部材)の製造過程における歪み等により生じたわずかながらに円形でない状態も含まれる。 The polishing means comes into contact with the outer peripheral surface of a cylindrical workpiece, and the workpiece rotates by the rotating means, whereby the surface layer portion of the workpiece can be polished. Further, since the workpiece sandwiched between the clamping means is rotated in the circumferential direction by the rotating means (hereinafter referred to as rotating means (for workpiece)), the surface layer portion of the workpiece is made uniform. It can be polished. Further, during this polishing process, the polishing means is moved relative to the workpiece in the longitudinal direction of the workpiece, that is, in a direction orthogonal to the substantially circular cross section, so that the entire workpiece is Can be uniformly polished. The term “substantially circular” includes not only a circular shape but also an ellipse or the like, which includes a slightly non-circular state caused by distortion in the manufacturing process of the workpiece (columnar member).
 また、研磨開始前に研磨加工完成品の標準片(以降、「マスターワーク」と記す)を研磨手段により研磨加工を開始する高さ位置を高さ位置検出手段により検出して記憶させた後、被加工物の高さ位置を検出し、前記マスターワークにより検出した高さ位置と被加工物により検出した高さ位置との差分を制御手段によって演算し、演算結果に基づき前記研磨手段の先端と被加工物との距離を補正することで、複数の被加工物の研磨加工を連続して行うことができる。なお、第1の発明に記載の「入力」とは、手動(作業者)により制御手段に入力(記憶)された情報、自動で制御手段に入力(記憶)された情報、手動または/および自動で入力(記憶)された情報を元に演算した後に入力(記憶)された情報、のいずれをも含む。 In addition, after starting polishing, a standard piece (hereinafter referred to as “master work”) of the finished polishing process is detected by the height position detecting means and stored by the polishing means by the polishing means, and stored. The height position of the workpiece is detected, the difference between the height position detected by the master workpiece and the height position detected by the workpiece is calculated by the control means, and the tip of the polishing means is calculated based on the calculation result. By correcting the distance to the workpiece, polishing of a plurality of workpieces can be performed continuously. The “input” described in the first invention is information input (stored) to the control means manually (operator), information automatically input (stored) to the control means, manual or / and automatic Any of the information input (stored) after the calculation based on the information input (stored) in (1) is included.
 また、前記研磨手段を砥粒が含有している毛材で構成される研磨ブラシを用いることで、十分な研磨力を確保し、かつ被加工物に研磨によるダメージを抑えることができる。これは、例えば研磨石等による研磨などの他の研磨方法と比べて毛材は柔軟性があるので、被加工物に研磨によるダメージを抑さえることができ、また毛材には砥粒が含有されているので、研磨力は十分に確保することができる。 Further, by using a polishing brush composed of a bristle material containing abrasive grains as the polishing means, a sufficient polishing force can be secured and damage to the workpiece can be suppressed. This is because the hair material is more flexible than other polishing methods such as polishing with a polishing stone, etc., so that damage to the workpiece can be suppressed, and the hair material contains abrasive grains. Therefore, a sufficient polishing power can be secured.
 また、前記毛材を複数本束ねた研磨具を植設した研磨具取付プレートの位置(上下方向)を任意に設定することで、研磨手段の底部より露出する毛材の長さを調整することができる。すなわち、毛材の摩耗に合わせて研磨具取付プレートの位置を下方に移動することで、常に露出している毛材の長さを一定に保つことができる。 Further, the length of the hair material exposed from the bottom of the polishing means can be adjusted by arbitrarily setting the position (vertical direction) of the polishing tool mounting plate on which the polishing tool in which a plurality of the hair materials are bundled is implanted. Can do. That is, the length of the hair material that is always exposed can be kept constant by moving the position of the polishing tool mounting plate downward according to the wear of the hair material.
 また、研磨加工時に被加工物に接触するものが弾性体であるので,被加工物が該研磨ブラシと接触することによるダメージを低減することができる。 In addition, since the object that contacts the workpiece during polishing is an elastic body, damage due to the workpiece contacting with the polishing brush can be reduced.
 また、前記毛材に混合される砥粒の粒度がF180~#2000(JIS R6001:1998)であり、1の研磨手段は略同一の粒子径が混合されている研磨ブラシである。すなわち、該粒度が大きい毛材または弾性体を備える研磨手段ほど研磨能力が高く、被加工物の表層部に存在するマイクロクラックを的確に除去することができ、該粒度が小さい毛材または弾性体を備える研磨手段ほど、該表層部を微細に研磨し凹凸を除去することができる。 Further, the grain size of the abrasive grains mixed with the bristle material is F180 to # 2000 (JIS R6001: 1998), and one polishing means is a polishing brush in which substantially the same particle diameter is mixed. That is, the polishing means having a bristle or elastic body having a larger particle size has a higher polishing ability and can accurately remove microcracks existing in the surface layer portion of the workpiece, and the bristle or elastic body having a smaller particle size. As the polishing means is provided, the surface layer can be finely polished to remove irregularities.
 また、研磨手段を、円柱状の被加工物の軸芯に沿って複数個連設して配置さすることで、被加工物の種類や目的に応じて適宜研磨手段を選択して加工をおこなうことができる。すなわち、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、該研磨手段に備えられる毛材または弾性体に含まれる前記粒度が「粗」から「細」の順に、前記被加工物が通過し加工するように連設することで、一度の研磨加工にて被加工物の表層部のマイクロクラックおよび凹凸を除去することができる。また、前述の様な「粗」→「細」のような多段加工を必要とせず、1段階の加工で要求される表面が得られる場合(例えば、被加工物Wの表面のマイクロクラックが微小で、表面粗さが要求値に対して大差がない場合は「細」のみで加工)には、連設された2以上の研磨手段が備える毛材または弾性体に含まれる前記砥粒の粒度は、いずれの研磨手段も略同一とすることで加工時間を短縮することができる。 In addition, by arranging a plurality of polishing means along the axis of the cylindrical workpiece, the polishing means is appropriately selected according to the type and purpose of the workpiece and processed. be able to. That is, select two or more kinds of polishing means having hair materials or elastic bodies having different particle sizes, and the particle sizes contained in the hair materials or elastic bodies provided in the polishing means are in the order of "rough" to "fine", By arranging the workpieces so as to pass and process, microcracks and irregularities in the surface layer portion of the workpiece can be removed by a single polishing process. Further, when the surface required by one-step processing can be obtained without requiring multi-step processing such as “rough” → “thin” as described above (for example, micro cracks on the surface of the workpiece W are minute). In the case where the surface roughness is not significantly different from the required value, the processing is performed only with “thin”), and the grain size of the abrasive grains contained in the bristle material or the elastic body provided in the two or more polishing means provided in series. The processing time can be shortened by making all the polishing means substantially the same.
 また、被加工物の円形断面の同一面内において配置された第1の研磨手段と第2の研磨手段からなる研磨手段において、第1の研磨手段と第2の研磨手段の軸芯が、被加工物の半径方向に一致するように配置し、第1の研磨手段の軸芯と第2の研磨手段の軸芯が、所定の角度θを構成するように、被加工物の断面中心で交わるように配置することで、加工時間を短縮することができる。
 また、前記第1の研磨手段と第2の研磨手段を、円柱状の被加工物の軸芯に沿って各々複数個連設して配置することで、被加工物の種類や目的に応じた前述の加工の時間を短縮することができる。
Further, in the polishing means composed of the first polishing means and the second polishing means arranged in the same plane of the circular cross section of the workpiece, the shaft cores of the first polishing means and the second polishing means are to be processed. Arranged so as to coincide with the radial direction of the workpiece, the axis of the first polishing means and the axis of the second polishing means intersect at the center of the cross section of the workpiece so as to form a predetermined angle θ. By arranging in this way, the processing time can be shortened.
Further, a plurality of the first polishing means and the second polishing means are arranged in series along the axial center of the cylindrical work piece, so that it corresponds to the kind and purpose of the work piece. The processing time described above can be shortened.
 また、前記研磨装置を使用することより、表層より100μmのマイクロクラックが除去され、かつ表面粗さRyが3μm以下である円柱状部材を得ることができる。前記円柱状部材として、シリコンブロックやセラミックスといった硬脆材料を好適に用いることができる。 Further, by using the polishing apparatus, a cylindrical member having 100 μm microcracks removed from the surface layer and having a surface roughness Ry of 3 μm or less can be obtained. As the cylindrical member, a hard and brittle material such as a silicon block or ceramics can be suitably used.
本発明の研磨装置の全体を示す説明図である。It is explanatory drawing which shows the whole polishing apparatus of this invention. 本発明の研磨手段の1例を示す説明図である。図2(A)は正面から見た一部切り欠き断面図、図2(B)は底面図である。It is explanatory drawing which shows one example of the grinding | polishing means of this invention. FIG. 2A is a partially cutaway cross-sectional view seen from the front, and FIG. 2B is a bottom view. 本発明の研磨手段の他の例を表す説明図である。図3(A)は毛材を底部に植設した模式図、図3(B)は弾性体を底部に設置した模式図である。It is explanatory drawing showing the other example of the grinding | polishing means of this invention. FIG. 3A is a schematic diagram in which a hair material is planted at the bottom, and FIG. 3B is a schematic diagram in which an elastic body is installed at the bottom. 本発明における第1の実施形態を説明するためのフローチャートである。It is a flowchart for demonstrating 1st Embodiment in this invention. 本発明における第1の実施形態を説明するためのフローチャートである。It is a flowchart for demonstrating 1st Embodiment in this invention. 本発明における第1の実施形態を説明するためのフローチャートである。It is a flowchart for demonstrating 1st Embodiment in this invention. 本発明における第1の実施形態を説明するためのフローチャートである。It is a flowchart for demonstrating 1st Embodiment in this invention. 本発明における第3の実施形態を表す説明図である。It is explanatory drawing showing the 3rd Embodiment in this invention. 本発明における第3の実施形態を示す説明図である。It is explanatory drawing which shows 3rd Embodiment in this invention.
 本発明の第1の実施形態にかかる研磨装置の構成内容と作動の詳細ついて、図を用いて説明する。 第1の実施形態にかかる研磨装置は、研磨粗さが異なる研磨手段を2連以上(3連)備えた円柱状部材用の研磨装置である。 The details of the configuration and operation of the polishing apparatus according to the first embodiment of the present invention will be described with reference to the drawings. The polishing apparatus according to the first embodiment is a polishing apparatus for a cylindrical member provided with two or more (three) polishing means having different polishing roughnesses.
 図1は、図中右端の研磨開始前位置に停止している研磨ユニット1と、1点鎖線で示す被加工物Wの図中左右に配置されるクランプ手段5であって、被加工物Wの左側に配置され、クランプ手段5のシリンダー駆動により摺動する基準側のクランプ軸12Aの先端に取り付けられた把持部6Aと、被加工物Wの右側に配置され、従動側のクランプ軸12Bの先端に取り付けられた把持部6Bを備えた研磨装置の正面図を示すものである。 図1においては、把持部6A、6Bが夫々後退した位置に配置されており、被加工物Wを挟持していない開放状態を示すものである。 前記研磨ユニット1は、それぞれが回転手段(研磨手段用)2aに連結された3の研磨手段2と、研磨開始前に被加工物Wの加工面(外周面)Pの高さ位置を検出するための高さ位置検出手段3とで構成されている。なお、該研磨手段2を被加工物Wに対して相対的に移送させる移送手段(図示せず)によって、研磨を行う際に研磨ユニットは図1における左側から右側に向けて移送されるので、前記研磨手段2は右から順に、粗研磨用、中研磨用、仕上げ研磨用として連設されている。すなわち、研磨手段に備えられている毛材に含有される砥粒の粒度は、右から順に「粗」→「細」となっている。また、前記高さ位置検出手段3は前記粗研磨用の研磨手段2の右側に設けられている。 FIG. 1 shows a polishing unit 1 stopped at a position before polishing start at the right end in the drawing, and clamping means 5 disposed on the left and right of the workpiece W indicated by a one-dot chain line. 6A, a gripping portion 6A attached to the tip of a reference-side clamp shaft 12A that slides by driving the cylinder of the clamp means 5, and a right-hand side of the workpiece W, and a driven-side clamp shaft 12B. The front view of the grinding | polishing apparatus provided with the holding part 6B attached to the front-end | tip is shown. In FIG. 1, the gripping portions 6A and 6B are disposed at the retracted positions, respectively, and show an open state in which the workpiece W is not sandwiched. The polishing unit 1 detects the height position of three polishing means 2 each connected to a rotating means (for polishing means) 2a and a processing surface (outer peripheral surface) P of the workpiece W before starting polishing. And a height position detecting means 3 for this purpose. The polishing unit is transferred from the left side to the right side in FIG. 1 when polishing is performed by a transfer unit (not shown) that transfers the polishing unit 2 relative to the workpiece W. The polishing means 2 is arranged in order from the right for rough polishing, medium polishing, and finish polishing. That is, the grain size of the abrasive grains contained in the bristle provided in the polishing means is “rough” → “fine” in order from the right. The height position detection means 3 is provided on the right side of the rough polishing means 2.
 前記した3連の研磨手段2における粗研磨用研磨手段2は研磨能力を大として表層部に存在するマイクロクラックの大半を削り取る目的で設けるものであり、中研磨用研磨手段2はバンドソーもしくはワイヤソーにより切断したときに発生した表面の凹凸除去と前記粗研磨で荒れた表面を微細化する目的で設けるものであり、仕上げ研磨用研磨手段2は表面粗さの最終調整を目的に設けるものである。なお、前記中研磨の段階で表面の凹凸除去と表面粗さの微細化調整が完了すれば、仕上げ研磨用研磨手段2を使用せず、研磨手段2を2連にしても良いものである。 The rough polishing polishing means 2 in the above-described triple polishing means 2 is provided for the purpose of scraping most of the microcracks existing in the surface layer portion with a large polishing ability, and the intermediate polishing polishing means 2 is a band saw or a wire saw. It is provided for the purpose of removing irregularities on the surface generated when cutting and refining the surface roughened by the rough polishing, and the polishing means 2 for final polishing is provided for the purpose of final adjustment of the surface roughness. If the removal of the surface irregularities and the adjustment of the surface roughness are completed at the intermediate polishing stage, the polishing means 2 may be duplicated without using the polishing means 2 for final polishing.
 被加工物Wの加工に先立ち、高さ位置検出手段3により研磨手段2の研磨加工を開始する高さ位置を設定するためにマスターワークを使用する。
 前記高さ位置を設定するために、まずマスターワークの両端をクランプ手段5にて挟持する。クランプ手段5によってマスターワークを挟持する際、例えばV字状の溝を有する基台(図示せず)に載置して行うことが好ましい。該溝にマスターワークを設置することで、該マスターワークの図中左右方向の中心は常に略同位置とすることができる。さらに、該基台は、その図中上下方向の設置位置を微調整するための調整手段(図示せず)を有していることがさらに好ましい。マスターワークを該基台に載置し、前記クランプ手段5のクランプ軸12Aおよび12Bを各々前進させて把持部6Aおよび6Bがマスターワークの両端部を挟持する。その後、該基台を取り外す。本実施形態では、V字状の溝を持つ基台の設置および取外しは基台が図中上下に移動することで行われる。(図4参照)
Prior to processing the workpiece W, the master work is used to set the height position at which the polishing processing of the polishing means 2 is started by the height position detection means 3.
In order to set the height position, first, both ends of the master work are clamped by the clamp means 5. When the master work is sandwiched by the clamping means 5, it is preferable to place it on a base (not shown) having a V-shaped groove, for example. By installing the master work in the groove, the center of the master work in the left-right direction in the drawing can always be substantially the same position. Furthermore, it is more preferable that the base has adjustment means (not shown) for finely adjusting the installation position in the vertical direction in the figure. The master work is placed on the base, and the clamp shafts 12A and 12B of the clamp means 5 are advanced, so that the gripping portions 6A and 6B sandwich the both ends of the master work. Thereafter, the base is removed. In the present embodiment, the installation and removal of the base having the V-shaped groove is performed by moving the base up and down in the drawing. (See Figure 4)
 クランプ手段5は、回転手段(被加工物用)(図示せず)によって回転、すなわちクランプ軸12Aおよび12Bの軸芯を中心にして回転するので、マスターワークの端面側から見たクランプ軸12Aおよび12Bの先端の把持部6Aおよび6Bの軸芯と、マスターワークの軸芯とが一致するよう芯出し調整がされていなければならない。この調整を前記調整手段により行いながらマスターワークを挟持する。このように加工位置に設置されたマスターワークを用い、該マスターワークの外周面の高さ位置を前記高さ位置検出手段3により測定したあと、該マスターワークはクランプ手段5から取り外される。本実施形態では、マスターワークをクランプ手段5で挟持後、研磨ユニット1に備えられる高さ位置検出手段3によって、マスターワークの外周面高さ位置Hを測定し、その後該マスターワークを回転(例えば180度)させ、回転した状態での高さ位置Hを測定する。HとHの差を演算し、HとHが略同一でない場合は、前記基台を上昇させた後クランプ軸12Aおよび12Bを各々後退させてマスターワークの挟持を解除する。前記演算結果を基に前記基台の高さ位置(マスターワークをクランプ手段5で挟持させるための上下方向停止位置)を調整(上昇・または下降)した後、再びマスターワークをクランプ手段5で挟持し、挟持されたマスターワークのHおよびHが測定される。HとHが略同一となるとマスターワークの芯出し工程が完了する。(図5参照) The clamp means 5 is rotated by a rotating means (for a workpiece) (not shown), that is, rotates around the axis of the clamp shafts 12A and 12B. Therefore, the clamp shaft 12A and the clamp shaft 12A viewed from the end face side of the master workpiece The centering adjustment must be made so that the axis of the gripping portions 6A and 6B at the tip of 12B and the axis of the master work coincide. The master work is held while performing this adjustment by the adjusting means. After using the master work placed at the machining position in this way and measuring the height position of the outer peripheral surface of the master work by the height position detecting means 3, the master work is removed from the clamping means 5. In the present embodiment, after clamping the master work by clamping means 5, by the height position detection means 3 provided in the polishing unit 1 measures the outer circumferential surface height position H 1 of the master work, then rotating the master work ( for example, 180 degrees) is to measure the height position of H 2 at a rotational state. It calculates a difference of an H 1 and H 2, if H 1 and H 2 is not substantially the same, respectively retracting the clamp shaft 12A and 12B after raising the base to release the holding of the master workpiece. After adjusting (raising / lowering) the height position of the base (vertical stop position for clamping the master work with the clamp means 5) based on the calculation result, the master work is again held with the clamping means 5 Then, H 1 and H 2 of the sandwiched master work are measured. When H 1 and H 2 are substantially the same, the master work centering step is completed. (See Figure 5)
 マスターワークの芯出し工程が完了後、研磨ユニット1は図1における右方向に移動する。そして、前記基台を上昇させ、前記クランプ軸12Aおよび12Bを各々後退させてマスターワークの挟持を解除すると共に基台のV字状の溝の上にマスターワークを載置する。その後、マスターワークを被加工物Wと交換し、マスターワークの時と同様に芯出し工程を行う。前記芯出し工程が完了したら、該研磨ユニットを図1における左側に移動させる。なお、前記マスターワークの芯出し工程によってマスターワークの外周面高さ位置Hが、前記被加工物Wの芯出し工程によって被加工物Wの外周面高さ位置hがそれぞれ制御手段に記憶される。 After the master work centering process is completed, the polishing unit 1 moves to the right in FIG. Then, the base is raised, the clamp shafts 12A and 12B are retracted to release the master work, and the master work is placed on the V-shaped groove of the base. Thereafter, the master work is replaced with the workpiece W, and the centering process is performed in the same manner as in the master work. When the centering step is completed, the polishing unit is moved to the left side in FIG. The outer peripheral surface height position H of the master workpiece is stored in the control means by the master workpiece centering step, and the outer peripheral surface height position h of the workpiece W is stored in the control device by the centering step of the workpiece W. .
 あらかじめ制御手段に入力された加工条件(研磨手段2の回転速度、被加工物Wの回転速度、研磨ユニット1の移送速度、(被加工物Wの加工面Pに対する)切込み量と、前記外周面高さ位置H、hを基に演算処理を行い、研磨ユニット1を上下方向、すなわち研磨ユニットと加工面Pの距離方向に移動させる。 Processing conditions (rotation speed of the polishing means 2, rotation speed of the workpiece W, transfer speed of the polishing unit 1, cutting depth (with respect to the processing surface P of the workpiece W), and the outer peripheral surface previously input to the control means Arithmetic processing is performed based on the height positions H and h, and the polishing unit 1 is moved in the vertical direction, that is, in the distance direction between the polishing unit and the processing surface P.
 前記加工条件に基づいて研磨手段2、被加工物Wを前記制御手段13によって所定の回転速度にて回転させる。その後、同様に研磨ユニット1を前記制御手段13によって所定の移動速度にて図1における右側へ移動させる。この移動によって、被加工物Wの被加工面Pと回転している研磨手段2の先端部は接触し、研磨加工が行われる。前述の通り、研磨手段2は図1の右から左に向かって順に「粗」→「細」の順に並んでいるので、この移動によって、「粗研磨」→「中研磨」→「仕上げ研磨」が行われる。研磨ユニットが所定の位置(最右端)に移動したのち、前記基台が上昇し、その後クランプ手段12Aおよび12Bが後退し、該被加工物Wの挟持が解除され、該被加工物Wを取り出すことで研磨加工が完了する。 The polishing means 2 and the workpiece W are rotated by the control means 13 at a predetermined rotational speed based on the processing conditions. Thereafter, similarly, the polishing unit 1 is moved to the right side in FIG. 1 by the control means 13 at a predetermined moving speed. By this movement, the workpiece surface P of the workpiece W and the tip of the rotating polishing means 2 come into contact with each other, and polishing is performed. As described above, since the polishing means 2 are arranged in the order of “rough” → “fine” in order from the right to the left in FIG. 1, this movement causes “rough polishing” → “medium polishing” → “finish polishing”. Is done. After the polishing unit has moved to a predetermined position (rightmost end), the base is raised, and thereafter the clamping means 12A and 12B are retracted, the clamping of the workpiece W is released, and the workpiece W is taken out. This completes the polishing process.
 複数の被加工物Wを加工する場合は、前記基台に新たに被加工物Wを設置した後、同様に被加工物のクランプ行程、被加工物の芯出し行程を経て研磨加工を行う。すなわち、最初にマスターワークの高さ位置を測定することで、その後複数の被加工物Wの研磨加工を行うことができる。(図6、図7参照) In the case of processing a plurality of workpieces W, after the workpieces W are newly installed on the base, polishing is similarly performed through a clamping process of the workpieces and a centering process of the workpieces. That is, by first measuring the height position of the master work, a plurality of workpieces W can be polished thereafter. (See Figs. 6 and 7)
 本実施形態では、研磨ユニット1を図中横方向へ移送させたが、被加工物Wを移送させてもよいし、研磨ユニット1と被加工物Wの双方を移送させてもよい。 In the present embodiment, the polishing unit 1 is moved in the horizontal direction in the figure, but the workpiece W may be transferred, or both the polishing unit 1 and the workpiece W may be transferred.
 本実施形態では、加工条件を手動で制御手段に入力したが、手動で入力された加工条件と自動で入力(記憶)された外周面高さ位置より、入力されていない加工条件を制御手段にて演算させて研磨加工を行ってもよい。たとえば、被加工物の加工面Pに対する研磨手段の先端の切り込み量(以降、単に「切り込み量」と記す)と研磨手段2の回転速度を入力することで、被加工物Wの移動速度を制御手段13により演算させてもよいし、他の加工条件や高さ位置から切り込み量を制御手段13により演算させてもよい。そして、これらの演算結果に基づいて研磨加工を行うことができる。 In the present embodiment, the machining conditions are manually input to the control means. However, the machining conditions that have not been input to the control means are determined based on the manually input machining conditions and the automatically input (stored) outer peripheral surface height position. The polishing process may be performed by calculating the above. For example, the moving speed of the workpiece W is controlled by inputting the cutting amount of the tip of the polishing means with respect to the processing surface P of the workpiece (hereinafter simply referred to as “the cutting amount”) and the rotation speed of the polishing means 2. It may be calculated by the means 13, or the cutting amount may be calculated by the control means 13 from other processing conditions and height positions. Then, polishing can be performed based on these calculation results.
 入力する加工条件は本実施形態の項目に限られない。たとえば、研磨手段2の種類、被加工物の状態を入力してもよく、またこれらを基に制御手段13による演算を組み合わせてもよい。 The processing conditions to be input are not limited to the items in this embodiment. For example, the type of the polishing means 2 and the state of the workpiece may be input, and the calculation by the control means 13 may be combined based on these.
 図2(A)および(B)は、前記研磨手段2である研磨ブラシの1例を示すもので、砥粒を混合したナイロン等の合成樹脂からなる毛材10aを束ねて研磨具10とし、該研磨具10の基部を回転手段(研磨具用)2aに連結し水平回転するようにした研磨具取付プレート11に着脱自在に取付けて、下端が被加工物Wの加工面Pに接触回転して研磨を行い、研磨具10が磨耗したら該研磨具10を研磨具取付プレート11から取外し新しい研磨具10に交換できるものである。なお、研磨手段2である研磨ブラシは、図2に示すものに限るものでなく、砥粒を混合した毛材10aからなる研磨具10を研磨具取付プレート11に直接取付けて固定し、該研磨具10が磨耗したら研磨具取付プレート11共々交換するものでもよいし、研磨具10を使用せず、砥粒を含有したナイロン等の合成樹脂からなる毛材10aを、研磨手段2の底部にリング状に植設してもよい(図3(A)参照)。また、例えば、セラミックス等の研磨加工や、加工の際に略90°の角度をなす柱状体の角部に研磨手段2が接触する場合など、研磨手段2と被加工物Wの接触によって欠け(チッピング)が生じることが問題となる場合には、砥粒を含有した合成樹脂からなる弾性体10bを研磨手段の底部にリング状に配置してもよい(図3(B)参照)。この場合の弾性体10bとは、例えば硬度が比較的柔らかい樹脂のバルク体や、内部に多数の気泡を有するポリウレタンやウレタンをはじめとする樹脂のバルク体や、繊維状の弾性体を互いに絡ませたものでもよい。硬度が比較的柔らかい樹脂のバルク体では、樹脂自体が緩衝材として働く。気泡を有する樹脂のバルク体では内部の気泡が緩衝材として働く。砥粒を含有し互いに絡み合った弾性体では、該弾性体が絡み合うことで、これらの集合体の内部には空気が包括されることとなり、この空気層が緩衝材として働く。いずれの場合も、該弾性体10bが被加工物に接触した際に適度な弾性力を保持するよう、合成樹脂の種類および砥粒の含有率などを適宜選択する。(図3参照。図3(A)および図3(B)は共に上図が正面を、下図が底面を表す。)
 なお、前記毛材または弾性体に混合される砥粒の粒度はF180~#2000(砥粒の粒度の定義はJIS規格 R6001:1998による)の範囲から選択することが望ましい。
2 (A) and 2 (B) show an example of a polishing brush that is the polishing means 2, and a bristle material 10a made of synthetic resin such as nylon mixed with abrasive grains is bundled to form a polishing tool 10. A base portion of the polishing tool 10 is connected to a rotating means (for polishing tool) 2a and is detachably attached to a polishing tool mounting plate 11 which rotates horizontally, and a lower end rotates in contact with a processing surface P of the workpiece W. When the polishing tool 10 is worn, the polishing tool 10 can be removed from the polishing tool mounting plate 11 and replaced with a new polishing tool 10. The polishing brush as the polishing means 2 is not limited to that shown in FIG. 2, and the polishing tool 10 made of the bristle material 10a mixed with abrasive grains is directly attached and fixed to the polishing tool mounting plate 11, and the polishing brush is polished. When the tool 10 is worn, the polishing tool mounting plate 11 may be replaced together, or the polishing tool 10 is not used, and a bristle material 10a made of synthetic resin such as nylon containing abrasive grains is attached to the bottom of the polishing means 2 (See FIG. 3 (A)). Further, for example, when the polishing means 2 comes into contact with a corner of a columnar body that forms an angle of about 90 ° during processing, such as ceramics, chipping occurs due to contact between the polishing means 2 and the workpiece W ( If the occurrence of chipping becomes a problem, an elastic body 10b made of a synthetic resin containing abrasive grains may be arranged in a ring shape at the bottom of the polishing means (see FIG. 3B). The elastic body 10b in this case is, for example, a resin bulk body having a relatively soft hardness, a resin bulk body such as polyurethane or urethane having a large number of bubbles inside, and a fibrous elastic body entangled with each other. It may be a thing. In a bulk body of a resin having a relatively soft hardness, the resin itself functions as a buffer material. In the bulk body of resin having bubbles, the bubbles inside serve as a buffer material. In an elastic body that contains abrasive grains and is entangled with each other, the elastic bodies are entangled with each other, so that air is included in these aggregates, and this air layer functions as a cushioning material. In any case, the type of synthetic resin, the content of abrasive grains, and the like are appropriately selected so that the elastic body 10b maintains an appropriate elastic force when it contacts the workpiece. (See FIG. 3. In both FIGS. 3 (A) and 3 (B), the upper diagram represents the front and the lower diagram represents the bottom.)
The grain size of the abrasive grains mixed in the bristle material or elastic body is preferably selected from the range of F180 to # 2000 (the definition of the grain size of the abrasive grains is based on JIS standard R6001: 1998).
評価試験
 以下に、被加工物Wを円柱状の単結晶シリコンブロック(φ175mm×500mm)とし、前記被加工物Wの表層部を本発明の研磨装置を用いて加工してその表層部に存在するマイクロクラックとその表面の凹凸を除去して表面粗さを微細化して研磨効果を評価し、当該シリコンブロックをワイヤソーでスライス加工してシリコンウエハを形成したときに、そのシリコンウエハの割れ・欠け等による不良品の発生率を低減することができた評価試験結果について述べる。
Evaluation Test Below, the workpiece W is a cylindrical single crystal silicon block (φ175 mm × 500 mm), and the surface layer portion of the workpiece W is processed using the polishing apparatus of the present invention and exists in the surface layer portion. Micro-cracks and surface irregularities are removed to reduce the surface roughness and evaluate the polishing effect. When a silicon wafer is formed by slicing the silicon block with a wire saw, the silicon wafer is cracked or chipped. The results of evaluation tests that were able to reduce the incidence of defective products due to the above will be described.
 研磨加工前の前記被加工物Wの表層部には、深さが80~100μmのマイクロクラックが存在しその表面粗さは(Ry)9~11μm(Ryの定義はJIS規格 B0601:1994による)であり、該シリコンブロックをワイヤソーで切断(スライス加工)してシリコンウエハにしたときの割れ・欠け等による不良品の発生率が5~6%であった。 Micro-cracks having a depth of 80 to 100 μm are present on the surface layer of the workpiece W before polishing, and the surface roughness is (Ry) 9 to 11 μm (Ry is defined by JIS standard B0601: 1994). When the silicon block was cut (sliced) with a wire saw to form a silicon wafer, the incidence of defective products due to cracks, chips, etc. was 5 to 6%.
 第1の実施形態に記載の研磨装置を用いて前記被加工物(W)であるシリコンブロックを研磨加工してマイクロクラックおよび凹凸の除去と表面粗さを微小化した後、該シリコンブロックをワイヤソーでスライス加工してシリコンウエハを形成したときの割れ・欠け等による不良品の発生率を低減させた結果について述べる。 The silicon block which is the workpiece (W) is polished using the polishing apparatus described in the first embodiment to remove microcracks and irregularities, and the surface roughness is reduced, and then the silicon block is processed into a wire saw. The results of reducing the incidence of defective products due to cracks and chips when slicing and forming a silicon wafer will be described.
 本評価試験における加工条件を表1に示すように設定し、これを制御手段13に入力後、3本の単結晶シリコンブロックの加工を行った。その結果を表2に示す。このように、第1の実施形態における研磨装置を用いて加工をおこなうことで、単結晶シリコンブロックの表層部に存在するマイクロクラックの深さおよび外周面の凹凸を大幅に小さくすることができ、その結果、表2に示すように、マイクロクラックの最大深さが0.7~0.9μm、表面粗さが平面部Ry0.7~1.0(平均:Ry0.9)、であって、マイクロクラックおよび凹凸の除去と表面粗さを微小化することができた。 そしてそのシリコンブロックを3個ともワイヤソーでスライス加工してシリコンウエハにしたときの割れ・欠け等による不良品の発生率を2%低減することができた。マイクロクラックの最大深さは3.0μm以下、望ましくは2.3μm以下であることが望ましい。前記最大深さが3.0μm以上では前記不良品の発生率が増大する。また、前記最大深さが2.3μm以下であれば、数十μmの厚さにスライス加工してシリコンウエハにしたときの割れ・欠け等による不良品の発生率に与える影響が少ない。本評価試験では前記最大深さが0.9μmであり、前記不良品の発生率に影響を与える2.3μmを大幅に下回ることができた。 The processing conditions in this evaluation test were set as shown in Table 1, and after inputting this into the control means 13, three single crystal silicon blocks were processed. The results are shown in Table 2. Thus, by performing processing using the polishing apparatus in the first embodiment, the depth of the microcracks present in the surface layer portion of the single crystal silicon block and the unevenness of the outer peripheral surface can be significantly reduced. As a result, as shown in Table 2, the maximum depth of the microcracks is 0.7 to 0.9 μm, the surface roughness is the plane portion Ry 0.7 to 1.0 (average: Ry0.9), Removal of microcracks and irregularities and surface roughness could be reduced. And, when all three of the silicon blocks were sliced with a wire saw to form a silicon wafer, the incidence of defective products due to cracks and chips was reduced by 2%. The maximum depth of the microcracks is 3.0 μm or less, preferably 2.3 μm or less. When the maximum depth is 3.0 μm or more, the incidence of defective products increases. Further, when the maximum depth is 2.3 μm or less, there is little influence on the occurrence rate of defective products due to cracks / chips when sliced into a thickness of several tens of μm to form a silicon wafer. In this evaluation test, the maximum depth was 0.9 μm, which was significantly less than 2.3 μm, which affects the incidence of defective products.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
 次に、第2の実施形態にかかる研磨装置のについて説明する。第2の実施形態にかかる研磨装置では、「粗」→「細」のような多段加工を必要とせず、1段階の加工で要求される表面が得られる場合に用いる装置構成となっている。なお、ここでは第1の実施形態と異なる点についてのみ説明する。 Next, a polishing apparatus according to the second embodiment will be described. The polishing apparatus according to the second embodiment does not require multi-stage processing such as “rough” → “thin”, and has an apparatus configuration used when a surface required by one-stage processing can be obtained. Here, only differences from the first embodiment will be described.
 例えば、被加工物Wの表面の研磨処理前のマイクロクラックが微小で、かつ研磨処理前の表面粗さが要求値に対して大差がない場合は、研磨手段10(研磨ブラシ)は前述の「中研磨用」または「仕上げ研磨用」のみで加工を行うことができる。このような場合、研磨の目的に合わせた粒度の砥粒を含有する毛材または弾性体を備えた研磨手段10を1のみ設置して加工を行う。 For example, when the microcracks before the polishing process on the surface of the workpiece W are minute and the surface roughness before the polishing process is not greatly different from the required value, the polishing means 10 (polishing brush) is the “ Processing can be performed only by “for intermediate polishing” or “for final polishing”. In such a case, only one polishing means 10 including a hair material or an elastic body containing abrasive grains having a particle size suitable for the purpose of polishing is installed and processed.
 また、第1の実施形態における3連の研磨手段2に備えられる毛材または弾性体に含まれる粒度を略同一とすることで、加工時間を短縮することができる。 Further, the processing time can be shortened by making the particle sizes included in the hair material or the elastic body provided in the triple polishing means 2 in the first embodiment substantially the same.
 次に、第3の実施形態にかかる研磨装置について、図8および図9を参照しながら説明する。第3の実施形態にかかる研磨装置では、加工時間を短縮するように研磨手段2を配置した装置構成となっている。なお、ここでは第1の実施形態と異なる点についてのみ説明する。 Next, a polishing apparatus according to a third embodiment will be described with reference to FIGS. The polishing apparatus according to the third embodiment has an apparatus configuration in which the polishing means 2 is arranged so as to shorten the processing time. Here, only differences from the first embodiment will be described.
 第3の実施形態にかかる研磨装置では、被加工物Wの同一断面(円形)の面内において、第1の研磨手段21aと第2の研磨手段22aが配置されている。
第1の研磨手段21aと第2の研磨手段22aの軸芯は、被加工物Wの半径方向に一致するように配置されており、第1の研磨手段21aと第2の研磨手段22aが互いに干渉しないようにするために、第1の研磨手段21aの軸芯と第2の研磨手段22aの軸芯は、所定の角度θを構成するようにして、被加工物Wの断面中心で交わるように配置されている。(図8参照) この角度θは、第1の研磨手段21aと第2の研磨手段22aが互いに干渉しない限り、任意に設定することができるが、角度θを180°に設定し、第1の研磨手段21aの軸芯と第2の研磨手段22aの軸芯が完全に一致して対向するように配置することもできる。
 このような構成とすることによって、被加工物Wは円周方向に回転しながら研磨加工されるため、被加工物の加工面は第1の研磨手段21aと第2の研磨手段22aの2箇所において同時に研磨されるため、加工時間が短縮される。
In the polishing apparatus according to the third embodiment, the first polishing means 21a and the second polishing means 22a are arranged in the plane of the same cross section (circular shape) of the workpiece W.
The shaft centers of the first polishing means 21a and the second polishing means 22a are arranged so as to coincide with the radial direction of the workpiece W, and the first polishing means 21a and the second polishing means 22a are mutually connected. In order not to interfere, the axis of the first polishing means 21a and the axis of the second polishing means 22a intersect at the center of the cross section of the workpiece W so as to form a predetermined angle θ. Is arranged. (Refer to FIG. 8) This angle θ can be arbitrarily set as long as the first polishing means 21a and the second polishing means 22a do not interfere with each other, but the angle θ is set to 180 ° and the first It is also possible to arrange so that the axis of the polishing means 21a and the axis of the second polishing means 22a completely coincide with each other and face each other.
By adopting such a configuration, the workpiece W is polished while rotating in the circumferential direction, so that the processed surface of the workpiece is two places, the first polishing means 21a and the second polishing means 22a. In this case, the processing time is shortened.
 また、第3の実施形態にかかる研磨装置においても、第1の実施形態にかかる研磨装置と同様に、図9(図9の右の図は被加工物Wを正面から見た図であり、左の図は被加工物Wを左側面から見た図である。)に示すように、第1の研磨手段21aと第2の研磨手段22aを被加工物Wの長手方向に2連、あるいは3連として配置することもできる(図9は3連配置の状態を示す)。
 この場合、被加工物Wの長手方向に沿って左から順に、第1列目の第1の研磨手段21aと第2の研磨手段22a、第2列目の第1の研磨手段21bと第2の研磨手段22b、および第3列目の第1の研磨手段21cと第2の研磨手段22c、が配置されるようになっている。
 その際、それぞれの研磨手段に備えられている毛材または弾性体に含有される砥粒の粒度は、研磨手段21aと22a、研磨手段21bと22b、研磨手段21cと22cがそれぞれ略同一、すなわち略同一の研磨力を有するようにする。
 また、第2の実施形態と同様に、1の研磨力を有する研磨手段によって加工を行うことができるときは、全ての研磨手段に備えられている毛材または弾性体に含有される砥粒の粒度を略同一とすることができる。
Also, in the polishing apparatus according to the third embodiment, as in the polishing apparatus according to the first embodiment, FIG. 9 (the right diagram in FIG. 9 is a view of the workpiece W as viewed from the front, The figure on the left is a view of the workpiece W as seen from the left side.) As shown in FIG. 2, the first polishing means 21a and the second polishing means 22a are connected in the longitudinal direction of the workpiece W, or It is also possible to arrange as a triple (FIG. 9 shows a state of triple arrangement).
In this case, in order from the left along the longitudinal direction of the workpiece W, the first polishing means 21a and the second polishing means 22a in the first row, the first polishing means 21b and the second polishing in the second row. The polishing means 22b and the first polishing means 21c and the second polishing means 22c in the third row are arranged.
At that time, the abrasive grains contained in the hair material or the elastic body provided in each polishing means are substantially the same in the polishing means 21a and 22a, the polishing means 21b and 22b, and the polishing means 21c and 22c. The polishing power should be approximately the same.
Similarly to the second embodiment, when the processing can be performed by the polishing means having one polishing power, the abrasive grains contained in the hair material or the elastic body provided in all the polishing means. The particle size can be made substantially the same.
 また、上述した第3の実施形態にかかる研磨装置では、被加工物Wの円周方向に第1の研磨手段21aと第2の研磨手段22aの2つの研磨手段を設置する構成について説明したが、これに限定されるものではなく、各研磨手段が互いに干渉しない限りにおいて、設置スペースや目標とする加工時間等にあわせて任意の個数の研磨手段を配置するようにしても良い。 In the above-described polishing apparatus according to the third embodiment, the configuration in which the two polishing units, the first polishing unit 21a and the second polishing unit 22a, are installed in the circumferential direction of the workpiece W has been described. However, the present invention is not limited to this, and an arbitrary number of polishing means may be arranged in accordance with the installation space, the target processing time, etc. as long as the polishing means do not interfere with each other.
 以上のように、本実施形態および評価試験ではシリコンブロックを研削する場合を例に挙げて説明したが、本発明はシリコンブロックに限定されるものではなく、例えばセラミックス等、硬脆材料全般について好適に用いることができる。 As described above, in the present embodiment and the evaluation test, the case where the silicon block is ground has been described as an example. However, the present invention is not limited to the silicon block, and is suitable for all hard and brittle materials such as ceramics. Can be used.
 なお、本明細書において、砥粒の「粒度が略同一」とは、「粒度が同一」の砥粒に加えて、「同等の研磨効果が得られる粒度」の砥粒を含む概念である。 In addition, in this specification, "the particle size is substantially the same" of the abrasive grains is a concept including an abrasive particle of "a particle size capable of obtaining an equivalent polishing effect" in addition to the abrasive particles of "the same particle size".
1  研磨ユニット
2  研磨手段
2a 回転手段(研磨具用)
3  高さ位置検出手段
5  クランプ手段
  6A 把持部(基準位置側)
  6B 把持部(従動側)
 10  研磨具
 10a 毛材
 10b 弾性体
 11  研磨具取付プレート
 12A クランプ軸(基準位置側)
 12B クランプ軸(従動側)
 13  制御手段
 14A 回転手段(被加工物用)(基準位置側)
 14B 回転手段(被加工物用)(従動側)
  W  被加工物
  P  加工面
1 Polishing unit 2 Polishing means 2a Rotating means (for polishing tool)
3 Height position detection means 5 Clamping means 6A Grip part (reference position side)
6B Grip part (driven side)
DESCRIPTION OF SYMBOLS 10 Polishing tool 10a Hair material 10b Elastic body 11 Polishing tool mounting plate 12A Clamp axis | shaft (reference position side)
12B Clamp shaft (driven side)
13 Control means 14A Rotation means (for workpiece) (reference position side)
14B Rotating means (for workpiece) (driven side)
W Work piece P Work surface

Claims (18)

  1.  円柱状の被加工物の外周面の表層部を研磨する研磨装置であって、
     被加工物の回転手段に連結し、前記被加工物の両端面を挟持するクランプ手段と、
     前記被加工物の外周面に研磨手段の先端が接触回転しながら研磨加工する研磨手段と、
     前記被加工物に対し前記研磨手段を、前記被加工物の略円形である断面方向と直交する長手方向に相対的に移動させる移動手段と、
     研磨加工完成品および研磨加工前の被加工物の高さ位置を検出させる高さ位置検出手段と、
     前記高さ位置および加工条件が入力され、これを演算して研磨加工を行う制御手段と、
     を備え、
     前記演算は、前記研磨加工完成品の高さ位置と前記研磨前の被加工物の高さ位置の差の演算、または入力された加工条件より他の加工条件を設定するための演算、もしくはそれらの組み合わせのいずれかであることを特徴とする円柱状部材の研磨装置。
    A polishing apparatus for polishing a surface layer portion of an outer peripheral surface of a cylindrical workpiece,
    A clamping means connected to the rotating means of the workpiece and sandwiching both end faces of the workpiece;
    Polishing means for polishing while the tip of the polishing means contacts and rotates on the outer peripheral surface of the workpiece;
    Moving means for moving the polishing means relative to the workpiece in a longitudinal direction perpendicular to a cross-sectional direction of the workpiece, which is substantially circular;
    A height position detecting means for detecting the height position of the finished product before polishing and the workpiece before polishing;
    Control means for performing polishing by calculating the height position and processing conditions and calculating this,
    With
    The calculation is a calculation of the difference between the height position of the finished product of polishing and the height position of the workpiece before polishing, or a calculation for setting other processing conditions from the input processing conditions, or those A polishing apparatus for a cylindrical member, characterized in that any one of the combinations is provided.
  2.  前記研磨手段が研磨ブラシであって、該研磨ブラシは砥粒を含有した毛材が該研磨ブラシの底部にリング状に複数本植設された構造であることを特徴とする請求項1に記載の円柱状部材の研磨装置。 2. The polishing apparatus according to claim 1, wherein the polishing means is a polishing brush, and the polishing brush has a structure in which a plurality of bristle materials containing abrasive grains are planted in a ring shape at the bottom of the polishing brush. Polishing apparatus for cylindrical members.
  3.  前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有した毛材を複数本束ねた研磨具の基部が研磨具取付プレートに複数本植設された構造を有することを特徴とする請求項1に記載の円柱状部材の研磨装置。 The polishing means is a polishing brush, and the polishing brush has a structure in which a plurality of base parts of a polishing tool in which a plurality of bristle materials containing abrasive grains are bundled are planted on a polishing tool mounting plate. The cylindrical member polishing apparatus according to claim 1.
  4.  前記研磨手段が研磨ブラシであって、該研磨ブラシは、砥粒を含有した弾性体が該研磨ブラシの底部にリング状に配置された構造を有することを特徴とする請求項1に記載の円柱状部材の研磨装置。 The circle according to claim 1, wherein the polishing means is a polishing brush, and the polishing brush has a structure in which an elastic body containing abrasive grains is arranged in a ring shape at the bottom of the polishing brush. Polishing device for columnar members.
  5.  前記研磨手段が、円柱状の被加工物の軸芯に沿って複数個連設して配置されていることを特徴とする請求項2ないし請求項4のいずれか1つに記載の円柱状部材の研磨装置。 The cylindrical member according to any one of claims 2 to 4, wherein a plurality of the polishing means are arranged continuously along the axis of a cylindrical workpiece. Polishing equipment.
  6.  前記研磨手段が、被加工物の円形断面の同一面内において配置された第1の研磨手段と第2の研磨手段からなり、第1の研磨手段と第2の研磨手段の軸芯は、被加工物の半径方向に一致するように配置されており、第1の研磨手段の軸芯と第2の研磨手段の軸芯は、所定の角度θを構成するように、被加工物の断面中心で交わるように配置されていることを特徴とする請求項2ないし請求項4のいずれか1つに記載の円柱状部材の研磨装置。 The polishing means comprises a first polishing means and a second polishing means arranged in the same plane of the circular cross section of the workpiece, and the shaft centers of the first polishing means and the second polishing means are The workpiece is arranged so as to coincide with the radial direction of the workpiece, and the axis of the first polishing means and the axis of the second polishing means form a predetermined angle θ so that the cross-sectional center of the workpiece 5. The cylindrical member polishing apparatus according to claim 2, wherein the cylindrical member polishing apparatus is disposed so as to intersect each other.
  7.  前記第1の研磨手段と第2の研磨手段が、円柱状の被加工物の軸芯に沿って各々複数個連設して配置されていることを特徴とする請求項6に記載の円柱状部材の研磨装置。 7. The cylindrical shape according to claim 6, wherein a plurality of the first polishing means and the second polishing means are arranged in series along the axial center of the cylindrical workpiece. A device polishing apparatus.
  8.  前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、砥粒の粒度が異なる研磨手段が、砥粒の粒度が「粗」から「細」の順に研磨加工するように、円柱状の被加工物の軸芯に沿って連設されていることを特徴とする請求項5に記載の円柱状部材の研磨装置。 The abrasive used in the polishing means has a particle size of F180 to # 2000 mixed with the abrasive or the elastic body, and two or more types of polishing means having the hair or elastic body having different particle sizes are selected. The polishing means having different grain sizes are arranged along the axis of the cylindrical workpiece so that the abrasive grains are polished in the order of “rough” to “fine”. The cylindrical member polishing apparatus according to claim 5.
  9.  前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、砥粒の粒度が異なる研磨手段が、砥粒の粒度が「粗」から「細」の順に研磨加工するように、円柱状の被加工物の軸芯に沿って連設されていることを特徴とする請求項7に記載の円柱状部材の研磨装置。 The abrasive used in the polishing means has a particle size of F180 to # 2000 mixed with the abrasive or the elastic body, and two or more types of polishing means having the hair or elastic body having different particle sizes are selected. The polishing means having different grain sizes are arranged along the axis of the cylindrical workpiece so that the abrasive grains are polished in the order of “rough” to “fine”. 8. The cylindrical member polishing apparatus according to claim 7.
  10.  前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が略同一なる毛材または弾性体を有する研磨手段が、円柱状の被加工物の軸芯に沿って連設されていることを特徴とする請求項5に記載の円柱状部材の研磨装置。 The abrasive used in the polishing means has a particle size of F180 to # 2000 mixed with the bristle material or elastic body, and the abrasive means having the hair material or elastic body having substantially the same particle size has a cylindrical covering. 6. The cylindrical member polishing apparatus according to claim 5, wherein the cylindrical member polishing apparatus is provided continuously along the axis of the workpiece.
  11.  前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が略同一なる毛材または弾性体を有する研磨手段が、円柱状の被加工物の軸芯に沿って連設されていることを特徴とする請求項7に記載の円柱状部材の研磨装置。 The abrasive used in the polishing means has a particle size of F180 to # 2000 mixed with the bristle material or elastic body, and the abrasive means having the hair material or elastic body having substantially the same particle size has a cylindrical covering. 8. The cylindrical member polishing apparatus according to claim 7, wherein the cylindrical member polishing apparatus is provided continuously along the axis of the workpiece.
  12.  前記請求項1に記載の円柱状部材の研磨装置により、被加工物の表層より100μm以下に存在するマイクロクラックが除去され、かつ研磨加工面の表面粗さRyが3μm以下とされていることを特徴とする円柱状部材。 The cylindrical member polishing apparatus according to claim 1 is used to remove microcracks that are 100 μm or less from the surface layer of the workpiece, and that the surface roughness Ry of the polished surface is 3 μm or less. A cylindrical member characterized.
  13.  前記円柱状部材はシリコンブロックまたはセラミックスであることを特徴とする請求項12に記載の円柱状部材。 The columnar member according to claim 12, wherein the columnar member is a silicon block or a ceramic.
  14.  請求項1に記載の円柱状部材の研磨装置において、前記クランプ手段に挟持された被加工物を前記回転手段によって回転させると共に、
     前記研磨手段の先端を該被加工物の外周面に接触および回転をさせ、
     かつ該研磨手段を該被加工物に対して相対的に移動させることで研磨加工を行うことを特徴とする円柱状部材の研磨方法。
    The cylindrical member polishing apparatus according to claim 1, wherein the workpiece sandwiched between the clamp means is rotated by the rotating means, and
    Contact and rotate the tip of the polishing means to the outer peripheral surface of the workpiece,
    A polishing method for a cylindrical member, wherein polishing is performed by moving the polishing means relative to the workpiece.
  15.  請求項5に記載の円柱状部材の研磨装置において、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、砥粒の粒度が異なる研磨手段を、砥粒の粒度が「粗」から「細」の順に研磨加工するように、円柱状の被加工物の軸芯に沿って連設して研磨することを特徴とする円柱状部材の研磨方法。 6. The cylindrical member polishing apparatus according to claim 5, wherein the abrasive used in the polishing means or the abrasive mixed with the elastic body has a particle size of F180 to # 2000 and has a different particle size. Two or more kinds of polishing means having an elastic body are selected, and polishing means having different abrasive grain sizes are polished in order of the grain size of the abrasive grains from “rough” to “fine”. A method for polishing a cylindrical member, characterized by being provided by polishing along an axial core.
  16.  請求項7に記載の円柱状部材の研磨装置において、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が異なる毛材または弾性体を有する研磨手段を2種類以上選択し、砥粒の粒度が異なる研磨手段を、砥粒の粒度が「粗」から「細」の順に研磨加工するように、円柱状の被加工物の軸芯に沿って連設して研磨することを特徴とする円柱状部材の研磨方法。 8. The cylindrical member polishing apparatus according to claim 7, wherein the abrasive used in the polishing means or the abrasive mixed with the elastic body has a particle size of F180 to # 2000 and has a different particle size. Two or more kinds of polishing means having an elastic body are selected, and polishing means having different abrasive grain sizes are polished in order of the grain size of the abrasive grains from “rough” to “fine”. A method for polishing a cylindrical member, characterized by being provided by polishing along an axial core.
  17.  請求項5に記載の円柱状部材の研磨装置において、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が略同一なる毛材または弾性体を有する研磨手段を、円柱状の被加工物の軸芯に沿って連設して研磨することを特徴とする円柱状部材の研磨方法。 6. The cylindrical member polishing apparatus according to claim 5, wherein the abrasive grains mixed with the bristle material or the elastic body used in the polishing means have a grain size of F180 to # 2000, and the grain sizes thereof are substantially the same. A polishing method for a cylindrical member, characterized in that polishing means having a material or an elastic body is continuously provided along an axis of a cylindrical workpiece to be polished.
  18.  請求項7に記載の円柱状部材の研磨装置において、前記研磨手段に使用される毛材または弾性体に混合される砥粒の粒度がF180~#2000であって、その粒度が略同一なる毛材または弾性体を有する研磨手段を、円柱状の被加工物の軸芯に沿って連設して研磨することを特徴とする円柱状部材の研磨方法。 8. The cylindrical member polishing apparatus according to claim 7, wherein the abrasive grains mixed in the bristle material or the elastic body used in the polishing means have a grain size of F180 to # 2000, and the bristle grains having substantially the same grain size. A polishing method for a cylindrical member, characterized in that polishing means having a material or an elastic body is continuously provided along an axis of a cylindrical workpiece to be polished.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014200900A (en) * 2013-04-09 2014-10-27 尚一 島田 Processing apparatus
CZ306564B6 (en) * 2015-11-10 2017-03-08 S.A.M. - metalizaÄŤnĂ­ spoleÄŤnost, s.r.o. A method of machining the surface of the rotating parts and a device for performing this method
CN106808361A (en) * 2016-07-21 2017-06-09 东莞理工学院 A kind of vertical comprehensive grinder
CN109333193A (en) * 2018-09-29 2019-02-15 潘旭康 A kind of glass tube processing surface polishing and grinding apparatus
CN112917267A (en) * 2021-04-23 2021-06-08 程用房 Polyethylene pipe forming system and forming process
CN113021136A (en) * 2021-03-09 2021-06-25 河北地质大学 Geological exploration rock sample cleaning and grinding device
CN114453995A (en) * 2022-03-15 2022-05-10 安徽信息工程学院 Telescopic grinding device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014147978A (en) * 2011-05-31 2014-08-21 Sintokogio Ltd Processing device of columnar member
WO2013038573A1 (en) * 2011-09-15 2013-03-21 新東工業株式会社 System for grinding/polishing hard and brittle materials, and grinding/polishing method
JP2014079838A (en) * 2012-10-16 2014-05-08 Disco Abrasive Syst Ltd Grinder
CN104416428A (en) * 2013-08-26 2015-03-18 阳程科技股份有限公司 Grinding device for porous part
CN105750831A (en) * 2014-12-16 2016-07-13 上海运城制版有限公司 Machining method of intaglio roller excircle
CN104959907B (en) * 2015-07-15 2017-07-18 合肥京东方光电科技有限公司 Lapping device and Ginding process
CN107139075B (en) * 2017-06-20 2019-10-18 同济大学 A kind of processing unit (plant) for the polishing of quartz glass cylindrical surface
CN107443214B (en) * 2017-08-02 2019-04-05 浙江广源印刷包装有限公司 A kind of waste paper pipe surface automation polishing recycling equipment
CN111015489B (en) * 2019-11-22 2021-05-18 山西迪迈沃科光电工业有限公司 Polishing device for outer surface of revolving body

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0392261A (en) * 1989-08-31 1991-04-17 Amitetsuku Kk Wood finishing grinding machine
JPH05192853A (en) * 1992-01-21 1993-08-03 Shin Etsu Handotai Co Ltd Method and device for grinding projecting portion of developed single crystal bar
JPH11114800A (en) * 1997-10-20 1999-04-27 Think Lab Kk Method for specular-polishing cylindrical body
JP2000084848A (en) * 1998-09-10 2000-03-28 Noguchi Koki Kk Grinder
JP2002292559A (en) * 2001-03-29 2002-10-08 Noguchi Koki Kk Grinder
JP2003117800A (en) * 2001-10-17 2003-04-23 Sharp Corp SURFACE TREATMENT METHOD FOR POLYCRYSTALLINE Si INGOT

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2554408B2 (en) * 1991-04-19 1996-11-13 信越半導体株式会社 Automatic cylindrical grinding method and device
JPH0636760U (en) * 1992-10-23 1994-05-17 有限会社エイト総商 Peripheral grinding surface polishing device for cylindrical workpiece
CN1101873A (en) * 1993-10-20 1995-04-26 日立造船株式会社 Electrolysic combined method of lapping drum or cylinder work piece
JPH09103812A (en) * 1995-10-06 1997-04-22 Mitsubishi Heavy Ind Ltd Grinding device for rolling roll
JP2000084804A (en) * 1998-09-08 2000-03-28 Think Laboratory Co Ltd Grinding wheel polishing device for cylindrical body
JP2000117599A (en) * 1998-10-16 2000-04-25 Think Laboratory Co Ltd Grindstone polishing head and method
JP3405411B2 (en) 2001-02-22 2003-05-12 株式会社石井表記 Manufacturing method of rectangular substrate
JP2005254333A (en) * 2004-03-09 2005-09-22 Toyoda Mach Works Ltd Cylindrical grinding machine and grinding method
JP4133935B2 (en) * 2004-06-07 2008-08-13 シャープ株式会社 Silicon wafer processing method
JP2006021264A (en) * 2004-07-07 2006-01-26 Disco Abrasive Syst Ltd Grinding apparatus
JP5114701B2 (en) * 2004-12-21 2013-01-09 独立行政法人理化学研究所 Micro tool grinding apparatus and method
JP2007181906A (en) * 2006-01-10 2007-07-19 Jtekt Corp Processing device
JP5477935B2 (en) * 2007-09-27 2014-04-23 株式会社コーワ Processing brush
WO2009084101A1 (en) * 2007-12-28 2009-07-09 Sintobrator, Ltd. Prismatic member polishing device
JP5238317B2 (en) 2008-03-27 2013-07-17 株式会社ジェイシーエム Silicon block grinding and polishing machine and silicon wafer processing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0392261A (en) * 1989-08-31 1991-04-17 Amitetsuku Kk Wood finishing grinding machine
JPH05192853A (en) * 1992-01-21 1993-08-03 Shin Etsu Handotai Co Ltd Method and device for grinding projecting portion of developed single crystal bar
JPH11114800A (en) * 1997-10-20 1999-04-27 Think Lab Kk Method for specular-polishing cylindrical body
JP2000084848A (en) * 1998-09-10 2000-03-28 Noguchi Koki Kk Grinder
JP2002292559A (en) * 2001-03-29 2002-10-08 Noguchi Koki Kk Grinder
JP2003117800A (en) * 2001-10-17 2003-04-23 Sharp Corp SURFACE TREATMENT METHOD FOR POLYCRYSTALLINE Si INGOT

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014200900A (en) * 2013-04-09 2014-10-27 尚一 島田 Processing apparatus
CZ306564B6 (en) * 2015-11-10 2017-03-08 S.A.M. - metalizaÄŤnĂ­ spoleÄŤnost, s.r.o. A method of machining the surface of the rotating parts and a device for performing this method
CN106808361A (en) * 2016-07-21 2017-06-09 东莞理工学院 A kind of vertical comprehensive grinder
CN109333193A (en) * 2018-09-29 2019-02-15 潘旭康 A kind of glass tube processing surface polishing and grinding apparatus
CN109333193B (en) * 2018-09-29 2020-09-25 苏州市信睦知识产权服务有限公司 Surface polishing and grinding device for glass tube processing
CN113021136A (en) * 2021-03-09 2021-06-25 河北地质大学 Geological exploration rock sample cleaning and grinding device
CN112917267A (en) * 2021-04-23 2021-06-08 程用房 Polyethylene pipe forming system and forming process
CN114453995A (en) * 2022-03-15 2022-05-10 安徽信息工程学院 Telescopic grinding device

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