WO2012008121A1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur Download PDF

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Publication number
WO2012008121A1
WO2012008121A1 PCT/JP2011/003855 JP2011003855W WO2012008121A1 WO 2012008121 A1 WO2012008121 A1 WO 2012008121A1 JP 2011003855 W JP2011003855 W JP 2011003855W WO 2012008121 A1 WO2012008121 A1 WO 2012008121A1
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WO
WIPO (PCT)
Prior art keywords
adhesive
recess
semiconductor element
mounting substrate
semiconductor device
Prior art date
Application number
PCT/JP2011/003855
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English (en)
Japanese (ja)
Inventor
恭子 藤井
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パナソニック株式会社
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Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Publication of WO2012008121A1 publication Critical patent/WO2012008121A1/fr

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    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
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Definitions

  • the present invention relates to a semiconductor device having a structure of a mounting substrate that can reduce stress on a semiconductor element having a fragile structure, for example, a conversion element with a diaphragm or a thin semiconductor element having a thickness of 100 ⁇ m or less. .
  • a conversion element with a diaphragm or a semiconductor element having a fragile structure represented by a thin semiconductor element having a thickness of 100 ⁇ m or less is likely to be distorted due to stress at the time of mounting, and thus a target characteristic cannot be obtained.
  • the diaphragm is deformed by the stress on the element and the sensitivity is deteriorated.
  • the element is deformed by stress, so that the threshold voltage and the amount of quiescent current of the transistor are changed and the standard is not satisfied.
  • the semiconductor element is broken. This stress is generated by a difference in thermal expansion coefficient between the mounting substrate and the semiconductor element.
  • Conventionally, a measure has been taken to absorb the stress with an adhesive between the mounting substrate and the semiconductor element.
  • Patent Document 1 discloses a structure of a MEMS microphone that includes a MEMS (Micro Electro Mechanical Systems) chip that converts a sound signal into an electrical signal, a substrate to which the MEMS chip is bonded, and a shield case that covers the MEMS chip. Yes.
  • the junction between the MEMS chip and the substrate has a structure as shown in FIG.
  • FIG. 8 is a structural cross-sectional view of a conventional semiconductor device.
  • a conversion element 101 with a diaphragm is fixed to a mounting substrate 102 with an adhesive 103, and an electrode pad 104 of the conversion element 101 and an electrode land 105 of the mounting substrate 102 Are connected by a wire 106.
  • the adhesive surface of the element that is, the pedestal that supports the diaphragm
  • the adhesive must be drawn in accordance with the width of the frame.
  • it is necessary to draw an adhesive on the bonding surface of the element or the substrate surface to which the element is bonded using a nozzle having an inner diameter adjusted to the width of the frame but as the miniaturization progresses, the frame Therefore, it is necessary to reduce the inner diameter of the nozzle correspondingly.
  • the inner diameter of the nozzle is reduced, the high-viscosity adhesive is likely to be clogged with the nozzle, and there is a problem that it is difficult to draw finely.
  • the present invention has been made in view of the above problems, and even when a nozzle with a small inner diameter is used, the adhesive is not easily clogged, and even when a low-viscosity adhesive is used to suppress the bleed width, It is an object of the present invention to provide a semiconductor device having a structure in which the adhesive can sufficiently absorb stress.
  • a semiconductor device includes a mounting substrate, a metal layer formed on a surface of the mounting substrate, a first recess formed on the metal layer.
  • the adhesive can be retained in the first recess, and the viscosity of the adhesive is not increased.
  • the volume of the adhesive can be increased. For this reason, there are no side effects such as an increase in the bleed width when the viscosity of the adhesive is increased and a rise in the adhesive on the semiconductor element, and it is not necessary to increase the board mounting area as a countermeasure.
  • At least one or more electrode lands formed by exposing a part of the metal layer on the surface of the mounting substrate from the insulating layer, and at least one or more electrode pads on the outer periphery of the upper surface of the first semiconductor element.
  • the electrode land and the electrode pad may be electrically connected.
  • the bonding surface of the first semiconductor element is flat, and the adhesive thickness between the first semiconductor element and the mounting substrate in the region of the first recess is the first recess. It is preferable that the thickness is larger than the adhesive thickness between the first semiconductor element and the mounting substrate outside the region.
  • the adhesive in the first recessed region as compared with the amount of the adhesive when the first semiconductor element having the flat adhesive surface and the mounting substrate having the flat surface are bonded. it can. Therefore, the volume and thickness of the adhesive can be increased without increasing the viscosity of the adhesive, and the stress due to the difference in thermal expansion coefficient between the semiconductor element and the mounting substrate can be reduced.
  • the bottom surface of the first recess may be constituted by the metal layer.
  • the metal layer is a material conventionally formed on the mounting substrate, the semiconductor layer device can be manufactured without increasing the number of steps and the manufacturing cost only by changing the layout at the time of manufacturing the substrate. .
  • the metal layer may include a second recess formed continuously with the first recess in the thickness direction, and the adhesive may be filled in the region of the second recess. .
  • the thickness of the adhesive can be further increased as compared with the case where the recess is formed only in the insulating layer without forming the recess in the metal layer. As a result, a larger thermal stress absorption effect can be obtained, and the characteristic variation can be further reduced.
  • the adhesive thickness between the first semiconductor element and the mounting substrate in the first concave portion and the second concave portion is determined by the areas of the first concave portion and the second concave portion. It is preferable that the thickness is larger than the adhesive thickness between the first semiconductor element and the mounting substrate outside.
  • the adhesive is further secured in the first and second recessed regions. can do. Therefore, the volume and thickness of the adhesive can be increased without increasing the viscosity of the adhesive, and the stress due to the difference in thermal expansion coefficient between the semiconductor element and the mounting substrate can be reduced.
  • the bottom surface of the second recess may be made of a core material or a prepreg, and the side wall of the second recess may be made of the metal layer, the insulating layer, or both.
  • the core material, the prepreg, and the insulating layer are materials that conventionally constitute a mounting board. Therefore, the number of processes and manufacturing costs can be reduced by simply changing the layout at the time of board production without adding a new material.
  • the semiconductor device can be manufactured without increasing
  • the uppermost surface of the mounting substrate is formed immediately below the connection surface of the first semiconductor element so as to support the first semiconductor element in parallel with the mounting substrate. Also good.
  • a semiconductor device includes a mounting substrate, a metal layer formed on a surface of the mounting substrate and having a third recess, an adhesive filled in the third recess, and the metal
  • the adhesive is also filled in the periphery of the bonding surface of the first semiconductor element.
  • the third recess is provided on a part of the surface of the mounting substrate that is bonded to the first semiconductor element via the adhesive, so that the bleed width can be increased even when a low-viscosity adhesive is used.
  • the capacity of the adhesive that is narrow and can sufficiently absorb stress can be secured. Therefore, it is possible to obtain a miniaturizable MEMS microphone device that can sufficiently absorb the thermal stress applied to the first semiconductor element and has little characteristic variation with respect to secondary mounting and temperature.
  • the adhesive thickness between the first semiconductor element and the mounting substrate in the region of the third recess is equal to the first semiconductor element and the mounting outside the region of the third recess. It is preferable that the thickness is larger than the adhesive thickness between the substrate.
  • the adhesive in the third recessed region as compared with the amount of the adhesive when the first semiconductor element having the flat adhesive surface and the mounting substrate having the flat surface are bonded. it can. Therefore, the volume and thickness of the adhesive can be increased without increasing the viscosity of the adhesive, and the stress due to the difference in thermal expansion coefficient between the semiconductor element and the mounting substrate can be reduced.
  • an electronic component that is fixed to the surface of the mounting substrate via the adhesive may be further provided.
  • the insulating layer has a plurality of fourth recesses, and the adhesive is filled in the plurality of fourth recess regions and in the periphery of the bonding surface of the electronic component. It may be.
  • the bottom surface of the fourth recess may be made of a core material or a prepreg, and the side wall of the fourth recess may be made of the metal layer.
  • the core material, the prepreg, and the insulating layer are materials that conventionally constitute a mounting board. Therefore, the number of processes and manufacturing costs can be reduced by simply changing the layout at the time of board production without adding a new material.
  • the semiconductor device can be manufactured without increasing
  • At least one or more electrode lands may be provided on the upper surface of the electronic component, and the electrode lands and the electrode pads of the first semiconductor element may be electrically connected.
  • the electronic component may be a second semiconductor element.
  • the bonding surface of the second semiconductor element is flat, and the adhesive thickness between the second semiconductor element and the mounting substrate in the area of the fourth recess is the fourth recess. It is preferable that the thickness is larger than the adhesive thickness between the second semiconductor element and the mounting substrate outside the area.
  • the adhesive in the fourth recessed region as compared with the amount of the adhesive when the second semiconductor element having the flat adhesive surface and the mounting substrate having the flat surface are bonded. it can. Therefore, the volume and thickness of the adhesive can be increased without increasing the viscosity of the adhesive, and the stress due to the difference in thermal expansion coefficient between the semiconductor element and the mounting substrate can be reduced.
  • the thickness of the second semiconductor element may be 100 ⁇ m or less.
  • the semiconductor element having a fragile structure is a thin semiconductor element having a thickness of 100 ⁇ m or less
  • the concave portion is provided on the mounting substrate. Therefore, even when a low-viscosity adhesive that suppresses the bleed width is used, The amount of adhesive can be increased by the volume and thickness, and the stress applied to the semiconductor element can be sufficiently absorbed based on the difference in the thermal expansion coefficient between the mounting substrate and the semiconductor element, and the threshold voltage and quiescent current amount The fluctuation of the can be reduced. In addition, it is possible to prevent the semiconductor element from being broken due to stress during mounting.
  • the electronic component may be an amplifying element.
  • the mounting board preferably contains a glass epoxy resin.
  • Glass epoxy resin has a large difference in thermal expansion coefficient from that of semiconductor elements. If a ceramic substrate is used, the difference in thermal expansion coefficient from the semiconductor element can be reduced, but the cost increases. In addition, the difference in coefficient of thermal expansion between the ceramic substrate and the resin substrate for secondary mounting is increased, and there is a risk of causing problems such as peeling of the semiconductor device. By providing a recess in a part of the bonding surface between the semiconductor element and the mounting substrate, the stress can be reduced even if an inexpensive glass epoxy resin is used, and problems due to the stress in the secondary mounting can be avoided.
  • the first semiconductor element is preferably a microphone element with a diaphragm.
  • the semiconductor element having a fragile structure is a conversion element with a diaphragm
  • a concave portion is provided in a part of the bonding surface between the conversion element and the mounting substrate, so that even when an adhesive having a low viscosity is used.
  • the volume and thickness of the agent can be ensured and thermal stress can be absorbed. For this reason, even if the width of the Si frame is reduced with the miniaturization of the apparatus, the adhesive can be applied with a nozzle having a narrow inner diameter corresponding to the width of the frame.
  • the insulating layer may be a solder resist.
  • solder resist is a material that conventionally constitutes a mounting substrate, it is possible to manufacture a semiconductor layer device without increasing the number of steps and the manufacturing cost by simply changing the layout at the time of substrate manufacture. .
  • the semiconductor layer device of the present invention it is possible to increase the volume of the adhesive without increasing the viscosity of the adhesive by providing the recess in a part of the adhesive surface between the semiconductor element having a fragile structure and the mounting substrate. . Therefore, the stress generated between the semiconductor element and the mounting substrate is alleviated without causing side effects such as an increase in bleed width when the viscosity of the adhesive is increased and a rise of the adhesive on the semiconductor element. . Further, it is not necessary to increase the board mounting area for the stress relaxation countermeasure.
  • FIG. 1A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 1 of the present invention.
  • FIG. 1B is a plan view of a semiconductor device including the first semiconductor element according to Embodiment 1 of the present invention.
  • FIG. 2 is a graph showing the characteristic variation of the diaphragm of the semiconductor device according to the first embodiment.
  • FIG. 3A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 2 of the present invention.
  • FIG. 3B is a plan perspective view of the semiconductor device including the first semiconductor element according to Embodiment 2 of the present invention.
  • FIG. 4A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 3 of the present invention.
  • FIG. 4B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 3 of the present invention.
  • FIG. 5A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 4 of the present invention.
  • FIG. 5B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 4 of the present invention.
  • FIG. 6A is a structural cross-sectional view of a semiconductor device including the first semiconductor element according to Embodiment 5 of the present invention.
  • FIG. 6B is a perspective plan view of a semiconductor device including the first semiconductor element according to Embodiment 5 of the present invention.
  • FIG. 7A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 6 of the present invention.
  • FIG. 7B is a structural cross-sectional view of a semiconductor device including the first semiconductor element according to Embodiment 6 of the present invention.
  • FIG. 7C is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 6 of the present invention.
  • FIG. 8 is a structural cross-sectional view of a conventional semiconductor device.
  • FIG. 1A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 1 of the present invention.
  • a semiconductor device 50 shown in the figure represents a structure of a conversion element portion of a MEMS (Micro Electro Mechanical Systems) microphone, and includes a conversion element 1, a mounting substrate 3, an adhesive 4, and a wire 7. .
  • MEMS Micro Electro Mechanical Systems
  • the conversion element 1 with a diaphragm which is a MEMS microphone element, is a first semiconductor element including an Si frame 2 that supports the diaphragm and an electrode pad 5.
  • the mounting substrate 3 made of glass epoxy resin is a substrate including an electrode land 6, a solder resist 9 that is an insulating layer, a recess 10 that is a first recess, and a Cu layer 11 that is a metal layer.
  • the Si frame 2 is formed on the outer periphery of the diaphragm to reinforce the diaphragm, and is fixed to the mounting substrate 3 with an adhesive 4.
  • the electrode pad 5 and the electrode land 6 of the mounting substrate 3 are connected by a wire 7.
  • a MEMS microphone having a size of about 2 mm ⁇ 3 mm has been developed.
  • the width 8 of the Si frame 2 supporting the diaphragm is reduced to about 100 ⁇ m, and the distance between the electrode pad 5 and the electrode land 6 is reduced to 400 ⁇ m. .
  • a solder resist 9 is formed on the mounting surface on the mounting substrate 3 on which the conversion element 1 is mounted. A part of the bonding surface of the conversion element 1 is solder resist using a general photolithography technique. A recess 10 from which 9 is removed is formed. A Cu layer 11, which is a wiring material for the mounting substrate 3, is disposed at the bottom of the recess 10. The height of the recess 10 is equal to the film thickness of the solder resist 9, and is about 25 ⁇ m, for example.
  • solder resist 9 which is at least a part of the uppermost surface of the mounting substrate 3, is formed immediately below the connection surface of the conversion element 1 so as to support the conversion element 1 in parallel with the mounting substrate 3.
  • FIG. 1B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 1 of the present invention. Specifically, it is a plan view showing the Si frame 2 that supports the diaphragm of the MEMS microphone element and the recess 10 provided in the mounting substrate 3. 1A described above is a cross-sectional view taken along the line XX ′ of FIG. 1B.
  • the width of the recess 10 is narrower than the width 8 of the Si frame 2.
  • the adhesive 4 is drawn on the recess 10 along the recess 10 of the mounting substrate 3.
  • the adhesive 4 is, for example, an epoxy acrylate adhesive having a viscosity of 9500 cp and a thixo ratio of 4.5, and is drawn with a nozzle having an inner diameter of 100 ⁇ m. Then, the Si frame 2 of the conversion element 1 is bonded to the adhesive 4 drawn on the recess 10.
  • the Si frame 2 Since the width of the recess 10 provided on the mounting substrate 3 is narrower than the width 8 of the Si frame 2, the Si frame 2 is bonded above the surface of the solder resist 9.
  • the adhesive 4 is filled in the recess 10.
  • the adhesive 4 is formed on the solder resist 9 by protruding the width of the recess 10 by pressing the Si frame 2. Therefore, the thickness of the adhesive 4 on the solder resist 9 is, for example, about 8 ⁇ m, but the thickness of the adhesive 4 in the recess 10 is increased by 25 ⁇ m, which is the thickness of the solder resist 9. About 32 ⁇ m.
  • the concave portion 10 is formed on a part of the surface of the mounting substrate 3 and the adhesive surface with the conversion element 1 via the adhesive 4, and the adhesive 4 is formed on at least a part of the concave portion 10. Filled.
  • a sufficient volume of the adhesive 4 can be secured in the adhesion region of the Si frame 2, and the stress due to the difference in thermal expansion coefficient between the mounting substrate 3 and the conversion element 1 can be sufficiently absorbed. . Further, the bleed width 12 of the adhesive 4 at this time can be suppressed to 100 ⁇ m or less.
  • FIG. 2 is a graph showing the characteristic variation of the diaphragm of the semiconductor device according to the first embodiment.
  • the MEMS microphone device converts the diaphragm vibration depending on the sound frequency into an electric signal, and this diaphragm has a resonance frequency.
  • the resonance frequency is low when the sensitivity of the diaphragm is good.
  • the conversion element 1 is mounted on the mounting substrate 3, the conversion element 1 is deformed due to thermal stress from the mounting substrate 3 and the resonance frequency is increased.
  • the horizontal axis represents the thickness of the adhesive 4 when the conversion element 1 is mounted on the mounting substrate 3, and the vertical axis represents the rate of increase (%) in the resonance frequency due to mounting.
  • the thicker the adhesive film thickness the smaller the variation rate of the resonance frequency.
  • those with recesses ⁇ in FIG. 2 can suppress the fluctuation rate to 30% or less compared to those with no recesses and the same amount of adhesive applied ( ⁇ R in FIG. 2). it can.
  • ⁇ R in FIG. 2 the concave portion 10 on the surface of the mounting substrate 3 and part of the adhesion surface with the conversion element 1, it is possible to sufficiently absorb the stress to the MEMS microphone element, and to perform secondary mounting and temperature.
  • the adhesive has a narrow bleed width and can sufficiently absorb stress even when a low viscosity adhesive is used. Capacity and thickness can be secured. Therefore, there are no side effects such as an increase in bleed width when the viscosity of the adhesive is increased and a rise in the adhesive on the semiconductor element, and it is not necessary to increase the board mounting area.
  • glass epoxy resin is used as the mounting substrate 3.
  • the glass epoxy resin has a large difference in thermal expansion coefficient from that of a semiconductor element such as the conversion element 1.
  • a ceramic substrate is used, the difference in thermal expansion coefficient from the semiconductor element can be reduced, but the cost increases. Further, the difference in thermal expansion coefficient between the ceramic substrate and the resin substrate for secondary mounting becomes large, and there is a risk of causing problems such as peeling of the semiconductor device including the ceramic substrate.
  • the stress can be reduced even if an inexpensive glass epoxy resin is used. It is possible to avoid problems caused by
  • the volume of the adhesive 4 is secured even when a fragile semiconductor element such as the conversion element 1 with a diaphragm is mounted.
  • thermal stress can be absorbed.
  • the adhesive can be applied with a nozzle having a narrow inner diameter corresponding to the width.
  • a Cu layer 11 that is a wiring material of the substrate is disposed at the bottom of the recess 10. Since the solder resist 9 and the Cu layer 11 used for the mounting substrate 3 are materials constituting the conventional mounting substrate, the concave portion 10 can be formed without increasing the number of processes and the cost only by changing the layout at the time of manufacturing the substrate. It becomes possible to do.
  • the bottom of the recess 10 may be the core material or prepreg of the mounting substrate 3.
  • the side wall of the recess 10 may be the Cu layer 11 which is a wiring material, the solder resist 9 or both. These materials are materials that constitute a conventional substrate, and the concave portion 10 can be formed without increasing the number of steps and the cost by changing the layout at the time of manufacturing the substrate.
  • the side wall of the recessed part 10 is comprised with both the Cu layer 11 and the soldering resist 9, a deeper recessed part can be formed and adhesive agent thickness can be increased.
  • FIG. 3A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 2 of the present invention.
  • the semiconductor device 51 shown in the figure represents the structure of the conversion element portion of the MEMS microphone, and includes the conversion element 21, the mounting substrate 23, and the adhesive 4.
  • the conversion element 1 with a diaphragm is a first semiconductor element including a Si frame 2 that supports the diaphragm.
  • the mounting substrate 23 made of glass epoxy resin is a substrate that includes a recess 30 that is a third recess and a Cu layer 24 that is a metal layer.
  • the Si frame 2 is fixed to the mounting substrate 23 via the adhesive 4.
  • the width 8 of the Si frame 2 that is the base of the conversion element 21 used in the present embodiment is 100 ⁇ m.
  • a Cu layer 24 which is a wiring material having a film thickness of 20 ⁇ m is formed on the mounting surface of the mounting substrate 23.
  • FIG. 3B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 2 of the present invention. Specifically, it is a plan view showing the Si frame 2 that supports the diaphragm of the MEMS microphone element and the recess 30 provided in the mounting substrate 23. 3A described above is a cross-sectional view taken along line YY ′ of FIG. 3B.
  • the Cu layer 24 is formed from the outer peripheral portion of the mounting substrate 23 to the inside of 50 ⁇ m from the outer periphery of the Si frame 2. Therefore, the recess 30 is formed with a depth of 20 ⁇ m over an unformed region of the Cu layer 24, that is, an inner region from the inner side of the Si frame 2 by 50 ⁇ m. Since the patterning of the Cu layer 24 is performed simultaneously with the formation of the wiring of the mounting substrate 23, the recess 30 can be formed without increasing the number of steps.
  • the bottom of the recess 30 is a core material of the mounting substrate 23.
  • the silicone adhesive 4 having a viscosity of 10000 cp is drawn on the recess 30.
  • the Si frame 2 Since the outer periphery of the recess 30 provided on the mounting substrate 23 is smaller than the outer periphery of the Si frame 2, the Si frame 2 is bonded above the surface of the Cu layer 24 that is the wiring material of the mounting substrate 23.
  • the adhesive 4 is filled in the recess 30.
  • the adhesive 4 is formed on the Cu layer 24 by protruding the outer periphery of the recess 30 by pressure bonding of the Si frame 2. Therefore, the thickness of the adhesive 4 on the Cu layer 24 is 10 ⁇ m, for example, and about 30 ⁇ m in the recess 30.
  • the bleed width 12 at this time is 50 ⁇ m. That is, the recess 30 is formed on a part of the surface of the mounting substrate 23 and the adhesive element 4 via the adhesive 4, and the adhesive 4 is formed on at least a part of the recess 30. Filled.
  • the bleed width is narrow even when a low-viscosity adhesive is used by providing a recess on a part of the surface of the mounting substrate 23 and the adhesive element 4 via the adhesive 4.
  • capacitance of the adhesive agent which can absorb stress enough can be ensured. Therefore, it is possible to obtain a MEMS microphone device that can sufficiently absorb the thermal stress applied to the conversion element 21 and has a small characteristic variation with respect to secondary mounting and temperature, and that can be miniaturized.
  • a glass epoxy resin is used as the mounting substrate 23.
  • the glass epoxy resin has a large difference in thermal expansion coefficient from that of a semiconductor element such as the conversion element 21.
  • a ceramic substrate is used, the difference in thermal expansion coefficient from the semiconductor element can be reduced, but the cost increases. Further, the difference in thermal expansion coefficient between the ceramic substrate and the resin substrate for secondary mounting becomes large, and there is a risk of causing problems such as peeling of the semiconductor device including the ceramic substrate.
  • the stress can be reduced even if an inexpensive glass epoxy resin is used. It is possible to avoid problems caused by
  • the bottom of the recess 30 is the core material of the substrate. Since the Cu layer 24 used for the mounting substrate 23 is a material that constitutes a conventional mounting substrate, it is possible to form the recesses 30 without increasing the number of processes and the cost only by changing the layout at the time of manufacturing the substrate. It becomes.
  • the bottom of the recess 30 may be a prepreg.
  • the Cu layer 24 which is a wiring material, a solder resist, or both may be sufficient as the side wall of the recessed part 30.
  • FIG. These materials are materials that constitute a conventional substrate, and the concave portion 30 can be formed without increasing the number of steps and the cost by changing the layout at the time of manufacturing the substrate.
  • the side wall of the recessed part 30 is comprised with both the Cu layer 24 and a soldering resist, a deeper recessed part can be formed and adhesive agent thickness can be increased.
  • FIG. 4A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 3 of the present invention.
  • the semiconductor device 52 shown in the figure represents the structure of the conversion element portion of the MEMS microphone, and includes the conversion element 21, the mounting substrate 33, and the adhesive 4.
  • the conversion element 21 with a diaphragm is a first semiconductor element including the Si frame 2 that supports the diaphragm.
  • the mounting substrate 33 is a substrate that includes a recess 40 that is a third recess and a Cu layer 24 that is a metal layer.
  • the semiconductor device 52 according to the present embodiment is different from the semiconductor device 51 according to the second embodiment in that a sound hole 25 is provided in the mounting substrate 33.
  • a description will be given focusing on differences from the second embodiment.
  • a sound hole 25 for collecting sound is formed in the center of the mounting substrate 33.
  • the Si frame 2 is fixed to the mounting substrate 33 via the adhesive 4.
  • the width 8 of the Si frame 2 that is the base of the conversion element 21 used in the present embodiment is 100 ⁇ m.
  • a Cu layer 24 which is a wiring material having a film thickness of 20 ⁇ m is formed on the mounting surface of the mounting substrate 33.
  • FIG. 4B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 3 of the present invention. Specifically, it is a plan view showing the Si frame 2 that supports the diaphragm of the MEMS microphone element, the recess 40 provided in the mounting substrate 33, and the sound hole 25. 4A described above is a cross-sectional view taken along the line ZZ ′ of FIG. 4B.
  • the Cu layer 24 is formed from the outer peripheral portion of the mounting substrate 23 to the inside of 50 ⁇ m from the outer periphery of the Si frame 2. Therefore, the recess 40 is formed at a depth of 20 ⁇ m over a region where the Cu layer 24 is not formed, that is, an inner region from the inner periphery of the Si frame 2 that is 50 ⁇ m from the inner side and where no sound hole 25 is provided. Yes. Since the patterning of the Cu layer 24 is performed simultaneously with the formation of the wiring of the mounting substrate 33, the recess 40 can be formed without increasing the number of steps.
  • the bottom of the recess 40 is a core material of the mounting substrate 33.
  • an epoxy acrylate adhesive 4 having a viscosity of 9500 cp and a thixo ratio of 4.5 is drawn on the recess 40 using a dispense nozzle having an inner diameter of 100 ⁇ m.
  • a bleed of the adhesive 4 having a narrow width is formed on the outer wall side 14 of the Si frame 2.
  • the recess 40 is filled with the adhesive 4 on the inner wall side 15 of the Si frame 2, the spreading of the adhesive 4 into the sound hole 25 is stopped by the surface tension.
  • the thickness of the adhesive 4 is, for example, 10 ⁇ m on the Cu layer 24, and the recess 40 is about 30 ⁇ m thick by 20 ⁇ m, which is the wiring film thickness, and the thermal stress is sufficiently absorbed with a narrow bleed width.
  • the recess 40 is formed on a part of the surface of the mounting substrate 33 and the adhesive element 4 via the adhesive 4, and the adhesive 4 is formed on at least a part of the recess 40. Filled.
  • a glass epoxy resin is used as the mounting substrate 33.
  • the glass epoxy resin has a large difference in thermal expansion coefficient from that of a semiconductor element such as the conversion element 21.
  • a ceramic substrate is used, the difference in thermal expansion coefficient from the semiconductor element can be reduced, but the cost increases. Further, the difference in thermal expansion coefficient between the ceramic substrate and the resin substrate for secondary mounting becomes large, and there is a risk of causing problems such as peeling of the semiconductor device including the ceramic substrate.
  • the stress can be reduced even if an inexpensive glass epoxy resin is used. It is possible to avoid problems caused by
  • the volume of the adhesive 4 is secured even when a fragile semiconductor element such as the conversion element 21 with a diaphragm is mounted.
  • thermal stress can be absorbed.
  • the adhesive can be applied with a nozzle having a narrow inner diameter corresponding to the width.
  • the bottom of the recess 40 is the core material of the substrate. Further, since the Cu layer 24 used for the mounting substrate 33 is a material constituting the conventional mounting substrate, the recess 40 can be formed without increasing the number of steps and the cost only by changing the layout at the time of manufacturing the substrate. Is possible.
  • the bottom of the recess 40 may be a prepreg.
  • the sidewall of the recess 40 may be the Cu layer 24 that is a wiring material, the solder resist, or both. These materials are materials constituting the conventional substrate, and the recess 40 can be formed without increasing the number of steps and the cost by changing the layout at the time of manufacturing the substrate.
  • the side wall of the recessed part 40 is comprised with both the Cu layer 24 and a soldering resist, a deeper recessed part can be formed and adhesive agent thickness can be increased.
  • FIG. 5A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 4 of the present invention.
  • the conversion element 1 which is a MEMS microphone element with a diaphragm and the amplifier element 16 having a thickness of 100 ⁇ m for amplifying a signal from the conversion element 1 are fixed to the mounting substrate 43 made of glass epoxy resin through the adhesive 4.
  • the mounting substrate 43 made of glass epoxy resin through the adhesive 4.
  • the electrode pad 5 of the conversion element 1 and the electrode land 6 of the mounting substrate 43 are connected by a wire 7.
  • the amplifier element 16 is fixed at a distance of 400 ⁇ m from the conversion element 1, and each electrode is connected by a wire 17.
  • FIG. 5B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 4 of the present invention. Specifically, it is a plan view showing the Si frame 2 that supports the diaphragm of the MEMS microphone element, the amplifier element 16, and the recess 10 provided in the mounting substrate 43 and the grooves 18 that are a plurality of fourth recesses. Further, FIG. 5A described above is a cross-sectional view taken along the line VV ′ of FIG. 5B.
  • the width of the Si frame 2 that is the base of the conversion element 1 used in the present embodiment is 100 ⁇ m, but by patterning the solder resist 9 on the mounting surface of the mounting substrate 43 by screen printing technology, the width is 75 ⁇ m, A recess 10 having a depth of 25 ⁇ m is provided.
  • a plurality of grooves 18 are formed on the mounting surface of the amplifier element 16 by patterning the solder resist 9 into a 75 ⁇ m line and space.
  • the adhesive 4 is drawn on the recess 10 along the recess 10 of the mounting substrate 43, and is drawn on the groove 18 along the plurality of grooves 18.
  • the adhesive 4 is, for example, an epoxy acrylate adhesive having a viscosity of 9500 cp and a thixo ratio of 4.5, and is filled using a dispense nozzle having an inner diameter of 100 ⁇ m.
  • the thickness of the adhesive 4 in the recess 10 and the groove 18 is about 30 ⁇ m, respectively, and the thermal stress is absorbed while the bleed width 12 is suppressed. Can do. Therefore, it is possible to obtain a MEMS microphone device that can be miniaturized with little characteristic variation with respect to secondary mounting and temperature, and in which the amplifier element 16 is not destroyed.
  • the amplifier element 16 may be an electronic component that can be fixed to the mounting substrate via the adhesive 4, and may be, for example, a second semiconductor element.
  • the bonding surface of the second semiconductor element is flat, and the thickness of the adhesive 4 between the second semiconductor element and the mounting substrate 43 in the region of the groove 18 is the second thickness outside the region of the groove 18. It is larger than the adhesive thickness between the semiconductor element and the mounting substrate 43.
  • the volume and thickness of the adhesive 4 can be increased without increasing the viscosity of the adhesive 4, and the stress due to the difference in thermal expansion coefficient between the second semiconductor element and the mounting substrate 43 can be reduced.
  • FIG. 6A is a structural cross-sectional view of a semiconductor device including the first semiconductor element according to Embodiment 5 of the present invention.
  • the semiconductor device 54 shown in the figure represents the structure of the conversion element portion of the MEMS microphone, and includes the conversion element 1, the mounting substrate 63, and the adhesive 4.
  • the conversion element 1 with a diaphragm is a first semiconductor element including a Si frame 2 that supports the diaphragm.
  • the mounting substrate 63 made of glass epoxy resin is a substrate including the recess 20, the Cu layer 11, and the solder resist 9.
  • a description will be given focusing on differences from the first embodiment.
  • the Si frame 2 is fixed to the mounting substrate 63 via the adhesive 4.
  • FIG. 6B is a plan perspective view of a semiconductor device including the first semiconductor element according to Embodiment 5 of the present invention. Specifically, it is a plan view showing the Si frame 2 that supports the diaphragm, and the recess 20 provided on the mounting substrate 63 and the width 8 of the Si frame 2. 6A is a cross-sectional view taken along the line XX ′ of FIG. 6B.
  • the width of the Si frame 2 which is the base of the conversion element 1 is 100 ⁇ m, and the first concave portion having a width of 75 ⁇ m and a depth of 25 ⁇ m is formed by patterning the solder resist 9 on the mounting surface of the mounting substrate 63 by screen printing technology.
  • a recess 20A is provided.
  • the Cu layer 11 which is the lower layer of the solder resist 9 is patterned to form the recess 20B which is the second recess having a width of 150 ⁇ m.
  • the recess 20 ⁇ / b> B is a lower part of the recess 20 ⁇ / b> A and is continuously formed in the thickness direction of the solder resist 9 and the Cu layer 11.
  • solder resist 9 that is at least a part of the uppermost surface of the mounting substrate 63 is formed so as to support the conversion element 1 in parallel with the mounting substrate 63 immediately below the connection surface of the conversion element 1.
  • the thickness of the adhesive 4 can be further increased as compared with the case where the concave portion is formed only in the solder resist 9 without forming the concave portion in the Cu layer 11, and can be about 50 ⁇ m. .
  • a larger thermal stress absorption effect can be obtained, and the characteristic variation can be further reduced.
  • the bottom of the recess 20 may be a core material or a prepreg of the mounting substrate 63. Further, the sidewall of the recess 20 may be the Cu layer 11 that is a wiring material, the solder resist 9, or both. These materials are materials that constitute a conventional substrate, and the recess 20 can be formed without increasing the number of steps and the cost by changing the layout at the time of manufacturing the substrate.
  • FIG. 7A is a structural cross-sectional view of a semiconductor device including a first semiconductor element according to Embodiment 6 of the present invention.
  • FIG. 7B is a structural cross-sectional view of the semiconductor device including the first semiconductor element according to Embodiment 6 of the present invention.
  • FIG. 7C is a perspective plan view of a semiconductor device including the first semiconductor element according to Embodiment 6 of the present invention. Specifically, it is a plan view showing the Si frame 2 that supports the diaphragm of the MEMS microphone, and the recess 60 provided on the mounting substrate 73 and the width 8 of the Si frame 2.
  • 7A is a cross-sectional view taken along X1-X1 ′ in FIG. 7C
  • FIG. 7B is a cross-sectional view taken along X2-X2 ′ in FIG. 7C.
  • the width of the Si frame 2 that is the base of the conversion element 1 is 100 ⁇ m, and the solder resist 9 is patterned on the mounting surface of the mounting substrate 73 by the screen printing technique.
  • a recess 60A which is a first recess having a depth of 25 ⁇ m, is provided.
  • the Cu layer 11 which is the lower layer of the solder resist 9 is patterned, and the concave portion 60B which is the second concave portion is formed as in the fifth embodiment.
  • the recess 60B is a lower part of the recess 60A, and is continuously formed in the thickness direction of the solder resist 9 and the Cu layer 11.
  • a projecting portion made of the solder resist 9 is left in the region connecting the inner side and the outer side of the mounting region of the conversion element 1.
  • the structure of the protruding portion is a structure that supports the conversion element 1. With this structure, even if the width of the recess 60 is set to exceed the width 8 of the Si frame 2 of the conversion element 1, the conversion element 1 falls into the recess 60 as shown in the sectional view of FIG. There is no. Further, by making the width of the recess 60 wider than the width 8 of the Si frame 2, it is possible to increase the distance between the solder resist 9, which is a structure of the mounting substrate 73, and the conversion element 1. Can be obtained.
  • the semiconductor device according to the present invention is not limited to the first to sixth embodiments.
  • the present invention is particularly useful for a MEMS microphone having a conversion element with a diaphragm and a semiconductor device having a thin semiconductor element having a thickness of 100 ⁇ m or less, and a small semiconductor having a fragile structure and a stress-sensitive semiconductor element. Ideal for use in equipment.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur ayant une structure telle que, même quand le dispositif est utilisé avec un adhésif de faible viscosité afin d'éviter tout colmatage même dans le cas d'une buse de petit diamètre interne et de supprimer la largeur de dégorgement, l'adhésif peut suffisamment absorber les contraintes. Ledit dispositif semi-conducteur comprend une carte de montage (3) et un dispositif de conversion (1) de structure fragile, fixé sur la surface de la carte de montage (3) par un adhésif (4). Une encoche (10) est formée dans la surface de la carte de montage (3), de part et d'autre d'un plan auquel le dispositif de conversion (1) est fixé par l'adhésif (4), l'adhésif (4) étant disposé dans au moins une partie de l'encoche (10).
PCT/JP2011/003855 2010-07-13 2011-07-06 Dispositif semi-conducteur WO2012008121A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010159200 2010-07-13
JP2010-159200 2010-07-13

Publications (1)

Publication Number Publication Date
WO2012008121A1 true WO2012008121A1 (fr) 2012-01-19

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Application Number Title Priority Date Filing Date
PCT/JP2011/003855 WO2012008121A1 (fr) 2010-07-13 2011-07-06 Dispositif semi-conducteur

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Country Link
WO (1) WO2012008121A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726463B (zh) * 2018-10-30 2021-05-01 精材科技股份有限公司 晶片封裝體與電源模組

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051511A (ja) * 2001-08-03 2003-02-21 Hitachi Ltd 半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003051511A (ja) * 2001-08-03 2003-02-21 Hitachi Ltd 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI726463B (zh) * 2018-10-30 2021-05-01 精材科技股份有限公司 晶片封裝體與電源模組

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