WO2012004202A1 - Bauelement und verfahren zur herstellung eines bauelements - Google Patents
Bauelement und verfahren zur herstellung eines bauelements Download PDFInfo
- Publication number
- WO2012004202A1 WO2012004202A1 PCT/EP2011/061133 EP2011061133W WO2012004202A1 WO 2012004202 A1 WO2012004202 A1 WO 2012004202A1 EP 2011061133 W EP2011061133 W EP 2011061133W WO 2012004202 A1 WO2012004202 A1 WO 2012004202A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- semiconductor chip
- decoupling layer
- component according
- component
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 100
- 230000005693 optoelectronics Effects 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 230000002745 absorbent Effects 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 99
- 238000005253 cladding Methods 0.000 description 8
- 230000035882 stress Effects 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present application relates to a device with an optoelectronic semiconductor chip and a method for
- semiconductor chips can be mounted in a housing and provided to protect the semiconductor chip with a sheath.
- One object is to provide a device which has increased reliability in operation. Furthermore, a method is to be specified, with which such a device can be manufactured easily and reliably.
- a component has an optoelectronic semiconductor chip, which is provided with a Connection layer is mounted on a connection carrier and embedded in a sheath. Between the
- Connecting layer and the envelope is at least
- the connecting layer and the cladding are mechanically decoupled from each other.
- the decoupling layer is thus designed such that voltages occurring in the cladding are not transferred or only to a reduced proportion to the connecting layer.
- the covering can completely cover the decoupling layer in a plan view of the component.
- the wrapper may be an epoxy with a
- the decoupling layer preferably has a lower modulus of elasticity than the cladding.
- the material for the decoupling layer preferably has a modulus of elasticity of at most 1 GPa, more preferably of at most 200 kPa.
- the decoupling layer contains a material whose glass transition temperature T G is at room temperature or lower. At temperatures above the
- inorganic glasses in an energy-elastic range in which they are characterized by a high ductility.
- the decoupling layer contains a material from the group of material groups consisting of elastomer, resin, silicone resin, silicone, silicone gel, polyurethane, rubber.
- Particles can increase the density of the decoupling layer. This can cause a lower thermal effect of the decoupling layer. The danger of a
- the decoupling layer is designed to be reflective for the radiation generated or to be detected by the semiconductor chip during operation.
- particles may be embedded in the decoupling layer which reflect the radiation, in particular diffusely.
- a reflectivity in the visible spectral range of 85-6 or more, for example 95%, can be achieved by adding titanium dioxide particles.
- the decoupling layer is designed to be reflective for the radiation generated or to be detected by the semiconductor chip during operation.
- particles may be embedded in the decoupling layer which reflect the radiation, in particular diffusely.
- a reflectivity in the visible spectral range of 85-6 or more, for example 95% can be achieved by adding titanium dioxide particles.
- Decoupling layer for the emitted radiation emitted by the semiconductor chip during operation targeted absorbent.
- absorbing is meant in particular that the radiation is absorbed when hitting the decoupling layer to a proportion of at least 80%.
- the decoupling layer may be formed black to the human eye.
- Decoupling layer can be achieved in a radiation-emitting device, an increased contrast between the off state and the on state.
- an absorbent decoupling layer for example, soot particles are suitable.
- Decoupling layer in a plan view of the device at least partially, preferably completely, a part of the connection layer projecting beyond the semiconductor chip. Full coverage ensures that the
- the decoupling layer directly to the semiconductor chip.
- the decoupling layer can cover the semiconductor chip in a lateral direction, ie along a
- Optoelectronic semiconductor chip extending direction, rotate.
- the component is preferably as a
- the component a housing body.
- the housing body may have a cavity in which the semiconductor chip is arranged.
- connection carrier as a part of a
- Ladder frame be designed to the one
- Housing basic body of the housing body is formed.
- a bottom surface of the cavity is completely covered by the decoupling layer in a plan view of the component.
- a side surface of the cavity adjoining the bottom surface may limit the decoupling layer in the lateral direction.
- the semiconductor chip projects beyond the decoupling layer in a vertical direction. This ensures in a simple manner that an upper side of the semiconductor chip facing away from the connection carrier is free of the decoupling layer.
- connection carrier In a method for producing a component with an optoelectronic semiconductor chip, a connection carrier is provided according to an embodiment.
- the semiconductor chip is fastened by means of a connecting layer on the connection carrier.
- a decoupling layer is applied to the interconnect layer.
- a cladding is applied to the decoupling layer, wherein the semiconductor chip is embedded in the cladding.
- the cladding can be applied so that mechanical stresses in the
- connection between the semiconductor chip and the connection carrier can not or at least not substantially jeopardize.
- the connection between the semiconductor chip and the connection carrier can not or at least not substantially jeopardize.
- Decoupling layer applied by means of a dispenser can be used, for example casting, spraying, transfer molding or printing.
- FIG. 1 shows a first exemplary embodiment of a component in a schematic sectional view
- FIG. 2 shows a second exemplary embodiment of a component in a schematic sectional view
- Figure 3 shows an embodiment of a
- Optoelectronic semiconductor chip for a device and Figures 4A to 4C, an embodiment of a
- FIG. 1 A first embodiment of a component is shown in Figure 1 in a schematic sectional view.
- the device 1 has an optoelectronic semiconductor chip 2, which by means of a connecting layer 3 at a
- Connection carrier 4 is attached.
- an adhesive layer is suitable. But it can also find a Lot für application.
- connection carrier 4 and a further connection carrier 42 form a lead frame for the optoelectronic
- Component 1 A housing body 40 is formed on the lead frame.
- the component 1 is exemplified as a
- connection carrier 4 and the further connection carrier 42 from the side facing away from the radiation passage surface 10.
- the housing body 40 has a cavity 410 in which the semiconductor chip 2 is arranged.
- the further connecting conductor 42 is connected by means of a connecting line 43, approximately one
- DrahtbondMIS connected to the semiconductor chip 2, so that during operation of the device via the connection carrier 4 and the further connection carrier 42 charge carriers of various sides can be injected into the semiconductor chip 2 or can flow away from the semiconductor chip.
- the semiconductor chip 2 and the connecting line 43 are embedded in a sheath 5, which protects the semiconductor chip and the connecting line from external influences such as mechanical stress or moisture.
- the envelope 5 forms a radiation passage area 10 of the component.
- a decoupling layer 6 is arranged between the enclosure 5 and the connection layer 3.
- Decoupling layer 6 covers in a plan view of the device that part of the connection layer 3, which in the lateral direction, ie along a main extension plane of the semiconductor layers of the semiconductor chip 2 on the
- connection layer directly to each other.
- a mechanical decoupling between the connection layer and the enclosure is thereby realized in a reliable manner.
- the envelope 5 covers the decoupling layer 6 in
- the decoupling layer 6 has a smaller one
- Connection carrier 4 approximately at an interface between the Connection carrier and the connection layer 3, is thus largely reduced.
- the decoupling layer 6 preferably has one
- the decoupling layer contains a material whose glass transition temperature T G is at room temperature or lower.
- the decoupling layer preferably contains a material from the group of material groups consisting of elastomer, resin, silicone resin, silicone, silicone gel,
- Decoupling layer 6 may also for the enclosure 5 a
- the sheath may contain an epoxy or consist of an epoxide.
- the semiconductor chip 2 protrudes beyond the decoupling layer 6. A surface of the semiconductor chip 2 facing away from the connection carrier 4 thus remains free of the decoupling layer 6.
- the semiconductor chip 2 in particular an active region provided for the emission and / or the detection of radiation, preferably contains a III-V compound semiconductor material.
- III-V semiconductor materials are capable of generating radiation in the ultraviolet (Al x In y Gai- x - y N) over the visible (Al x In y Gai x - y , in particular for blue to green radiation, or Al x In y Gai- X _ y P, in particular for yellow to red
- III-V semiconductor materials in particular from the mentioned material systems, can continue in the generation of radiation high internal
- FIG. 2 A second embodiment of a component is shown in Figure 2 in a schematic sectional view. This second embodiment essentially corresponds to the first described in connection with FIG.
- the envelope 5 on the side facing away from the semiconductor chip 2 is convexly curved in plan view of the component.
- the sheath 5 additionally fulfills the function of a converging lens for the radiation emitted and / or received by the semiconductor chip during operation.
- the envelope may be formed in one piece or in several parts. For example, a lens forming portion of the envelope after the
- Radiation passage area 10 is the spatial
- particles 65 are embedded in the decoupling layer 6.
- the particles 65 preferably have an average size of between 200 nm and 10 ⁇ m, more preferably between 500 nm and 5 ⁇ m inclusive.
- the particles may, for example, contain or consist of a glass, an oxide, for example aluminum oxide, silicon oxide or titanium dioxide.
- the particles can influence the optical properties of the decoupling layer.
- Decoupling layer 6 embedded reflective particles For example, with titanium dioxide particles
- Reflectivities in the visible spectral range of 85 "6 or more, for example of 95% can be achieved by means of a reflective decoupling layer, the total radiant power emerging from the component 1 can be increased.
- particles are embedded in the decoupling layer, which absorb the radiation in a targeted manner.
- carbon black particles are suitable for this purpose.
- Component 1 can be increased between off and on state.
- the particles can also be used in the
- Embodiment find application. Depending on the
- Particles are also dispensed with.
- An exemplary embodiment of a semiconductor chip 2 which is for a component according to the first or second
- Embodiment is particularly suitable, is shown in Figure 3 in a schematic sectional view.
- the semiconductor chip 2 has a semiconductor body 21 with a semiconductor layer sequence, which forms the semiconductor body.
- the semiconductor body 21 is arranged on a support 27, which is supported by a growth substrate for the
- Semiconductor layers of the semiconductor body 21 is different.
- the carrier serves for the mechanical stabilization of the semiconductor body 21
- Growth substrate is removed is also referred to as a thin-film semiconductor chip.
- a thin-film semiconductor chip such as a thin-film light-emitting diode chip, can continue to be used within the scope of the present invention
- a support element e.g. the carrier 27, turned first first surface of a semiconductor body, which comprises a semiconductor layer sequence having an active region, in particular an epitaxial layer sequence, a mirror layer is applied or, as
- Bragg mirror integrated in the semiconductor layer sequence formed, at least part of the in Semiconductor layer sequence reflected radiation back into this;
- the semiconductor layer sequence has a thickness in the range of 20 microns or less, in particular in the range of 10 ym; and or
- the semiconductor layer sequence contains at least one
- Semiconductor layer having at least one surface which has a mixing structure which, in the ideal case, results in an approximately ergodic distribution of the light in the
- a basic principle of a thin-film LED chip is
- the semiconductor body 21 has an active region 22, which is arranged between a first semiconductor region 23 and a second semiconductor region 24.
- the first semiconductor region 23 is arranged between a first semiconductor region 23 and a second semiconductor region 24.
- Semiconductor region 23 and the second semiconductor region 24 have mutually different conductivity types, so that a diode structure is formed.
- the semiconductor body 21 is fastened to the carrier 27 by means of an assembly layer 26.
- an assembly layer 26 For example, a solder or an adhesive is suitable for the mounting layer.
- a mirror layer 25 is arranged, which is intended to reflect radiation generated in operation in the active region 22 in the direction of a radiation exit surface 20 of the semiconductor body.
- charge carriers are injected from different sides into the active region 22 via a first contact 28 and a second contact 29. Between the second contact 29 and the semiconductor body 21, a distribution layer 29a is formed.
- Distribution layer is provided for a uniform injection of charge carriers in the active region 22.
- the distribution layer 29a may be, for example, a transparent conductive oxide (TCO).
- the distribution layer 29a may have a metal layer that is so thin that it is transparent or at least translucent for the radiation generated in the active region 22. With a sufficiently high electrical transverse conductivity of the first semiconductor region 23, however, the distribution layer 29a can also be dispensed with.
- a conversion plate 7 is formed, in which a conversion substance 71 for conversion of the radiation generated in the active region 22 is embedded.
- the conversion plate can by means of a
- Semiconductor body 21 may be attached. Deviating from the conversion substance 71 may also be embedded in the enclosure 5. In particular, in direct utilization of the radiated from the semiconductor chip primary radiation can be completely dispensed with a conversion substance.
- a semiconductor chip can be used by the described embodiment, in which the carrier 27 by the growth substrate for the
- Semiconductor layer sequence of the semiconductor body is formed.
- the mounting layer 26 is not required in this case.
- a semiconductor chip can be used in which at least two contacts on the same side of the
- the semiconductor chip may also be used as a radiation detector for receiving radiation
- FIGS. 4A to 4C An exemplary embodiment of a method for producing a component is illustrated in FIGS. 4A to 4C by way of example for the production of a component which is designed as described in connection with FIG.
- a housing body 40 with a connection carrier 4 and a further connection carrier 42 is provided.
- Housing body 40 has a cavity 410, which is provided for the mounting of a semiconductor chip.
- connection layer 3 for example an electrically conductive adhesive layer or a solder layer.
- a decoupling layer is applied to the connection layer 3 in the region which projects beyond the semiconductor chip 2 in the lateral direction. This can be done for example by means of a dispenser. Alternatively, for example, pouring, spraying,
- Injection molding or printing application find.
- connection line 43 is interposed the semiconductor chip 2 and the further connection carrier
- the connecting line 43 but also be formed before the decoupling layer is applied.
- the semiconductor chip 2 and the connection line 43 are encased in a cladding 5
- Connection carrier 40 cause is so largely reduced. The life and reliability of the device is thus increased.
- the material for the sheath 5 thus does not have to be chosen primarily with regard to the modulus of elasticity but can be based on the
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180033647.9A CN103026512B (zh) | 2010-07-07 | 2011-07-01 | 器件和用于制造器件的方法 |
US13/808,705 US20130207144A1 (en) | 2010-07-07 | 2011-07-01 | Component and method for producing a component |
KR1020137003131A KR20130119907A (ko) | 2010-07-07 | 2011-07-01 | 소자 그리고 소자를 제조하기 위한 방법 |
JP2013517317A JP5721823B2 (ja) | 2010-07-07 | 2011-07-01 | デバイスおよびデバイスの製造方法 |
EP11743203.9A EP2591511B1 (de) | 2010-07-07 | 2011-07-01 | Bauelement und verfahren zur herstellung eines bauelements |
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DE102010026343.5 | 2010-07-07 | ||
DE102010026343A DE102010026343A1 (de) | 2010-07-07 | 2010-07-07 | Bauelement und Verfahren zur Herstellung eines Bauelements |
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WO2012004202A1 true WO2012004202A1 (de) | 2012-01-12 |
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PCT/EP2011/061133 WO2012004202A1 (de) | 2010-07-07 | 2011-07-01 | Bauelement und verfahren zur herstellung eines bauelements |
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US (1) | US20130207144A1 (de) |
EP (1) | EP2591511B1 (de) |
JP (1) | JP5721823B2 (de) |
KR (1) | KR20130119907A (de) |
CN (1) | CN103026512B (de) |
DE (1) | DE102010026343A1 (de) |
WO (1) | WO2012004202A1 (de) |
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US20130307013A1 (en) * | 2012-05-15 | 2013-11-21 | Avago Technlogies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device with dark layer |
KR20140035212A (ko) * | 2012-09-13 | 2014-03-21 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
KR20140089804A (ko) * | 2013-01-07 | 2014-07-16 | 엘지이노텍 주식회사 | 발광소자패키지 |
KR20150026049A (ko) * | 2013-08-30 | 2015-03-11 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 |
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DE102010026343A1 (de) | 2010-07-07 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
KR102033928B1 (ko) * | 2012-09-13 | 2019-10-18 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
US8876330B2 (en) | 2012-11-15 | 2014-11-04 | Illinois Tool Works Inc. | Illumination device |
JP6176101B2 (ja) * | 2013-12-17 | 2017-08-09 | 日亜化学工業株式会社 | 樹脂パッケージ及び発光装置 |
CN104979338B (zh) * | 2014-04-10 | 2018-07-27 | 光宝光电(常州)有限公司 | 发光二极管封装结构 |
DE102014105839A1 (de) * | 2014-04-25 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
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DE102018110506A1 (de) * | 2018-05-02 | 2019-11-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, konversionselement, verfahren zur herstellung einer vielzahl an konversionselementen und verfahren zur herstellung eines optoelektronischen bauelements |
JP7403944B2 (ja) * | 2018-05-30 | 2023-12-25 | シーシーエス株式会社 | Led発光装置 |
TWI696451B (zh) * | 2019-01-15 | 2020-06-21 | 邱裕中 | 帶通紅外光血糖檢測系統 |
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- 2011-07-01 CN CN201180033647.9A patent/CN103026512B/zh not_active Expired - Fee Related
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Cited By (8)
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US20130307013A1 (en) * | 2012-05-15 | 2013-11-21 | Avago Technlogies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device with dark layer |
KR20140035212A (ko) * | 2012-09-13 | 2014-03-21 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
JP2014057061A (ja) * | 2012-09-13 | 2014-03-27 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明システム |
KR101997243B1 (ko) * | 2012-09-13 | 2019-07-08 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
KR20140089804A (ko) * | 2013-01-07 | 2014-07-16 | 엘지이노텍 주식회사 | 발광소자패키지 |
KR102075522B1 (ko) * | 2013-01-07 | 2020-02-10 | 엘지이노텍 주식회사 | 발광소자패키지 |
KR20150026049A (ko) * | 2013-08-30 | 2015-03-11 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 |
KR102045778B1 (ko) * | 2013-08-30 | 2019-11-18 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 |
Also Published As
Publication number | Publication date |
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DE102010026343A1 (de) | 2012-03-29 |
EP2591511A1 (de) | 2013-05-15 |
CN103026512B (zh) | 2015-11-25 |
EP2591511B1 (de) | 2018-10-31 |
KR20130119907A (ko) | 2013-11-01 |
JP5721823B2 (ja) | 2015-05-20 |
CN103026512A (zh) | 2013-04-03 |
US20130207144A1 (en) | 2013-08-15 |
JP2013535808A (ja) | 2013-09-12 |
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