WO2011161775A1 - Dispositif électroluminescent excité par faisceau d'électrons - Google Patents

Dispositif électroluminescent excité par faisceau d'électrons Download PDF

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WO2011161775A1
WO2011161775A1 PCT/JP2010/060601 JP2010060601W WO2011161775A1 WO 2011161775 A1 WO2011161775 A1 WO 2011161775A1 JP 2010060601 W JP2010060601 W JP 2010060601W WO 2011161775 A1 WO2011161775 A1 WO 2011161775A1
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electron beam
layer
emitting device
semiconductor
beam excitation
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PCT/JP2010/060601
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English (en)
Japanese (ja)
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宏治 中原
朋信 土屋
慎 榊原
滋久 田中
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株式会社日立製作所
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Priority to PCT/JP2010/060601 priority Critical patent/WO2011161775A1/fr
Priority to JP2012521209A priority patent/JP5383912B2/ja
Publication of WO2011161775A1 publication Critical patent/WO2011161775A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Definitions

  • the present invention relates to an electron beam excitation type semiconductor light emitting device.
  • One cause of low luminous efficiency in the ultraviolet region of nitride semiconductors is a decrease in the p-type activation rate in AlGaN and AlN semiconductors with high Al compositions.
  • the AlGaN p-type activation rate is about several percent to several tens percent.
  • the activation rate when the Al composition is about 50% or more is 0.1% or less. This is because the acceptor level increases as the Al composition increases.
  • Patent Document 1 discloses a light source device including an electron beam excitation type semiconductor layer.
  • FIG. 6 of Patent Document 1 discloses a stripe semiconductor laser excited by an electron beam.
  • 11 is a semiconductor substrate
  • 12 and 13 are semiconductor layers forming a cladding layer
  • 14 is a semiconductor layer forming an active layer
  • 15 is a semiconductor layer forming a cap layer
  • 16 is a part of the cap layer 15.
  • a stripe-shaped ridge formed on the substrate, 17 is an insulator
  • 18 is a thin-film metal layer forming a thin-film electrode.
  • the semiconductor layers 12 to 15 are sequentially stacked on the semiconductor substrate 11 in an epitaxial manner.
  • Patent Document 1 a metal film is formed only on the upper surface of the ridge portion, and no metal film is formed on the insulating film on the side surface of the ridge and the bottom surface of the ridge groove (the lower surface beside the ridge).
  • the present inventors made a prototype of the electron beam excitation light emitting device of Patent Document 1, but the electron injection efficiency was extremely low. As a result of analysis, it was found that when an insulating film is used on the ridge side surface and the ridge groove bottom surface, a charge-up phenomenon occurs in the insulating film, resulting in a decrease in electron injection efficiency.
  • An object of the present invention is to improve the electron injection efficiency of an electron beam excitation light emitting device.
  • the present inventor has devised a structure in which an insulating film is disposed on the side surface of the mesa groove and the bottom surface of the mesa groove, and further, a metal film is formed over the entire surface.
  • this structure was prototyped and evaluated, the electron injection efficiency did not improve as expected. This is because the metal film is also on the mesa upper surface and the mesa side surface, so that the electron beam level irradiated from the electron beam source is weakened before reaching the active layer in the semiconductor layer. It is done.
  • the present inventors do not provide a metal film on the entire surface of the semiconductor layer on the electron beam source side, but provide an insulating film on the semiconductor layer without providing a metal film in a region where an electron beam without an insulating film is injected.
  • a metal film was partially provided only in the region.
  • the electron source was arrange
  • the planar pattern is in a stripe shape (so-called ridge type, semiconductor resonant structure called mesa type). It is efficient to have a structure in which the metal film is formed through an insulating film.
  • FIG. 1 is a cross-sectional view of an electron beam excitation laser device of Example 1.
  • FIG. 1 is a bird's-eye schematic view of a laser emission unit of an electron beam excitation laser device according to Embodiment 1.
  • FIG. FIG. 6 is a cross-sectional view of a modification of the electron beam excitation laser device according to the second embodiment. 6 is a cross-sectional view of an electron beam excitation laser device according to Example 3.
  • FIG. 6 is a bird's-eye schematic view of a laser emission unit of an electron beam excitation laser device according to Example 4.
  • FIG. FIG. 6 is a cross-sectional view of an electron beam excitation laser device according to a fifth embodiment.
  • FIG. 6 is a cross-sectional view of an electron beam excitation laser device according to a sixth embodiment.
  • FIG. 12 is a schematic bird's-eye view of an electron beam excitation laser apparatus according to Example 7.
  • FIG. 10 is a schematic cross-sectional view of a photonic crystal hole region in an electron beam excitation laser device of Example 7.
  • FIG. It is sectional drawing of the electron beam excitation light-emitting device stored in the vacuum container with a window.
  • Example 1 is an electron beam excitation laser device that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure.
  • FIG. 1 is a cross-sectional view (cross-section in the stripe direction of the ridge stripe structure 5) of the electron beam excitation laser apparatus of Example 1.
  • FIG. FIG. 2 is a bird's-eye schematic view of a laser light emitting unit of the electron beam excitation laser device according to the first embodiment.
  • Reference numeral 1 denotes a sapphire substrate
  • 2 denotes a lower n-type AlGaN cladding layer having an impurity concentration of 1 ⁇ 10 18 cm ⁇ 3 including an AlN buffer layer as a dopant
  • 3 denotes an undoped structure including an n-type Al (Ga) N guide layer
  • An AlGaN-quantum well active layer 4 is an upper n-type AlGaN cladding layer using Si with an impurity concentration of 1 ⁇ 10 18 cm ⁇ 3 as a dopant
  • 5 has a ridge stripe structure (Low Mesa structure).
  • the lower n-type AlGaN cladding layer 2, the undoped AlGaN-quantum well active layer 3, the upper n-type AlGaN cladding layer 4 and the ridge stripe structure (Low Mesa structure) 5 are formed on the sapphire substrate 1 by MOCVD (Metal-Organic Chemical Vapor Deposition). ) Method to form a semiconductor stacked body, and dry etching is performed using a striped mask.
  • the cross-section of the ridge stripe structure 5 is a rectangle with the width of the top surface of the ridge of 3 ⁇ m and the ridge height of 300 nm.
  • these semiconductor layers have a structure sandwiched between DBR mirrors or cleavage planes.
  • the insulating film 6 is an insulating film is composed of silicon dioxide SiO 2, is placed aside ridge stripe, in contact with the ridge stripe side.
  • the thickness of the insulating film 6 is 100 nm, which is half or less of the ridge height.
  • the insulating film 6 may have the same height as the ridge stripe structure 5.
  • a metal film 7 is an electrode in which a three-layer metal film made of Ti / Pt / Au is laminated on the insulating film 6. Instead of providing a metal film on the entire surface of the semiconductor layer, a metal film is not provided in a region without an insulating film for injecting an electron beam, and a metal film is provided only in a region having an insulating film on the semiconductor layer. Then, the electrons charged in the insulating film 6 flow through the electrode 7 to prevent the insulating film 6 from being charged up.
  • an electrode composed of a four-layer metal film made of Ti / Al / Ti / Au for making ohmic contact with the four upper n-type AlGaN cladding layers.
  • Electrode 9 is an electrode composed of a four-layer metal film made of Ti / Al / Ti / Au or Ti / Al / Mo / Au for making ohmic contact with the lower n-type AlGaN clad layer 5.
  • Example 1 0V is supplied to the electrodes 8 and 9. That is, the electrodes 8 and 9 are grounded.
  • the electrodes 8 and 9 are in ohmic contact with the semiconductor layer and grounded. As a result, electrons are injected into the ridge stripe without delay. Although wide band gap semiconductors such as nitride semiconductors have a large band gap, there is a concern that even semiconductors may be charged up. However, in our trial results, the semiconductor is doped and the above electrodes are formed by ohmic contact. The structure with the electrode grounded did not charge up.
  • the electron beam source 10 is an electron beam source.
  • the electron beam source 10 is made of barium oxide that emits thermoelectrons, and is arranged at a position where the electron beam is irradiated from the upper surface of the semiconductor layer exposed from the insulating film 6 and the electrode 7.
  • a vacuum vessel which is composed of a glass tube on which a gettering material for keeping the degree of vacuum is deposited.
  • the voltage Vd from the voltage source 12 was set in the range of -10V to -20kV.
  • Vg voltage Vg
  • the voltage was set in a range larger than Vd and lower than a ground voltage (0V). Even if the voltage Vg is not applied, the charge-up of the insulating film 6 is suppressed, but by applying the voltage Vg, the charge-up of the insulating film 6 is efficiently and stably suppressed.
  • Electrons e from the electron beam source 10 are generally emitted radially. Therefore, the electrons e are injected not only into the ridge stripe as the thick film portion but also into the side of the ridge stripe (the bottom surface of the ridge groove) as the thin film portion. Further, since the electrons e injected into the ridge stripe structure 5 emit secondary electrons, the electrons e are scattered around the electrons. In the absence of the metal film 7, electrons e are emitted to the insulating film 6 around the ridge stripe structure 5, so that the insulating film 6 is charged up.
  • APC Auto Power Control
  • FIG. 3 is a cross-sectional view (a cross section in the stripe direction of the ridge stripe structure 5) of a laser light emitting portion of an electron beam excitation laser device which is a modification of the first embodiment.
  • the difference from the first embodiment is that the insulating film 6 is formed higher than the ridge stripe structure 5.
  • the electrode 7 has a planar layout with no gap between the side surface of the ridge stripe 5 like the insulating film 6 in contact with the side surface of the ridge stripe. This is because the insulating film 6 is formed higher than the ridge stripe structure 5, so that the electrode 7 does not contact the side surface of the ridge stripe, and a leak current is generated due to the voltage difference between the electrode 7 and the semiconductor 1-5. Because there is no.
  • Example 3 is an electron beam excitation laser that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure.
  • FIG. 4 is a cross-sectional view of the electron beam excitation laser device of Example 3 (cross-section in the stripe direction of the ridge stripe structure 5). The difference from FIG. 1 is that the insulating film 6 and the metal film 7 are arranged away from the ridge stripe structure 5.
  • the penetration length at which accelerated electrons enter the semiconductor is formulated based on empirical rules. Kanaya and S. Made by Okayama, Journal of Physics D: Applied Physics Vol. 5, 43 (1972).
  • the scattering center depth in the material of electrons in GaN and AlN was about 0.2 ⁇ m, and the maximum penetration depth was about 0.6 ⁇ m.
  • Electrons reach the vicinity of the maximum penetration depth, but most electron-hole pairs are formed at the scattering center.
  • the height of the ridge is limited in order to reduce the height in order to guide light. Therefore, as shown in FIG. 4, the insulating film 6 and the metal film 7 are arranged apart from the ridge stripe structure 5 and electrons are injected from the side of the ridge, so that electron-hole pairs can be efficiently generated in the active layer.
  • the electrode 7 was further away from the ridge stripe structure 5 than the insulating film 6 to increase the gap. This has the merit that the leakage current when the voltage difference between the electrode 7 and the semiconductor 1-5 is high can be reduced, and the process margin at the time of manufacturing is increased.
  • a stable operation was obtained for 800 hours in an APC (Auto Power Control) test.
  • the insulating film 6 is lower than the height of the ridge stripe structure 5 as shown in FIG.
  • FIG. 5 is a cross-sectional view (a cross section in the stripe direction of the ridge stripe structure 5) of a laser light emitting portion of an electron beam excitation laser device which is a modification of the third embodiment.
  • the difference from Example 3 is that the insulating film 6 is formed higher than the ridge stripe structure 5 and that the electrode 7 protrudes from the insulating film 6 to the ridge stripe 5 side. This protrusion is stopped at the gap between the ridge stripe structure 5 and the insulating film 6.
  • the insulating film 6 is formed higher than the ridge stripe structure 5, there is an advantage that electrons are drawn by applying an appropriate Vg and highly efficient electron injection is performed. Further, since the electrode 7 protrudes into the gap between the ridge stripe structure 5 and the insulating film 6, the advantage that the electron injection to the side of the ridge stripe, which is the effect in the embodiment 3, can be controlled by the protrusion length is obtained. Yes.
  • Vg was set to an appropriate value between Vd and the ground voltage of 0V. As a result, electrons can be satisfactorily drawn into the ridge stripe structure 5.
  • Example 1 to Example 4 are an example, and their alternatives are shown below.
  • the sapphire substrate 1 is used as a substrate on which a nitride semiconductor is crystal-grown, but the same effect can be obtained by using an AlN substrate.
  • the AlN substrate may be semi-insulating or conductive with a dopant introduced.
  • electrodes are also formed on the back side of the substrate.
  • the AlGaN cladding layers 2 and 4 are doped with Si as a dopant and become an n-type semiconductor layer, there is an advantage that the activation rate is hardly changed by the injection of electrons e.
  • the p-type semiconductor layer may be formed by doping Mg into a nitride semiconductor.
  • the impurity concentration of these p-type or n-type dopants is preferably in the range of 7 ⁇ 10 16 to 3 ⁇ 10 19 cm ⁇ 3 .
  • the material composition of the ridge stripe structure 5 is the same as that of the upper n-type AlGaN cladding, but an edge stop layer made of a material having a different etching rate is interposed from the viewpoint of mesa height reproducibility. You may let them.
  • the ridge stripe structure 5 has a rectangular cross section, but may have a trapezoidal shape or an inverted trapezoidal shape.
  • the optimum range of dimensions of the ridge stripe structure 5 is a ridge width of 1 to 30 ⁇ m and a height of 100 to 800 nm.
  • the insulating film 6 uses not only silicon dioxide as in the above-described embodiments, but also other Si oxides or nitrides, Al oxides or nitrides, ZrO 2 , WO 3 , TiSiN, and HfO 2 . be able to.
  • the electron beam source 10 is composed of barium oxide that emits thermoelectrons, but tungsten or carbon nanotubes can be used.
  • the vacuum vessel 11 is composed of a glass tube on which a gettering material that maintains the degree of vacuum is deposited, but may be composed of a metal vessel.
  • Example 5 is an electron beam excitation surface emitting laser that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure.
  • FIG. 6 is a schematic cross-sectional view of only the light emitting portion, and the electron beam source 10, the vacuum vessel 11, and the power supplies 12 and 13 other than the light emitting portion have the same configuration as FIG.
  • 101 is an n-type AlN substrate, and 102 is an n-type semiconductor DBR layer.
  • n-type AlN layers 102a and n-type AlGaN layers 102b are alternately stacked with a layer thickness of ⁇ / 4n.
  • ⁇ is the oscillation wavelength
  • n is the refractive index of the layer.
  • Reference numeral 103 denotes an n-InGaAlN spacer layer
  • 104 denotes an InGaAlN quantum well active layer
  • 105 denotes an n-InGaAlN spacer layer.
  • 103 to 105 form a resonator structure corresponding to a film thickness of ⁇ / n.
  • 106 is an n-type AlN layer
  • 109 is an n-type semiconductor DBR layer, and is composed of an n-type AlN layer and an n-type AlGaN layer as in the lower layer.
  • 107 is an insulating film
  • 108 is a metal film
  • the metal film 108 is connected to a voltage corresponding to Vg in FIG.
  • Reference numeral 110 denotes an n-type ohmic electrode layer, which is grounded to 0V.
  • the n-type AlN layer 106 is also in ohmic contact with the n-type electrode at a position away from the light emitting portion, and is grounded to 0V.
  • Example 5 as in Example 1, since electrons easily reach the active layer 104 by injecting electrons into the region where the n-type AlN layer 106 at the top of the substrate in FIG. 6 is exposed, surface emission is efficiently performed.
  • the laser can oscillate. Furthermore, since the current region is defined by the insulating film 106 and the charge-up of the insulating film can be suppressed by 108, the deterioration of the laser characteristics due to the charge-up can be suppressed.
  • Example 5 a surface emitting laser oscillated at a threshold current of 0.5 mA by injecting electrons accelerated at a voltage of ⁇ 5 kV.
  • the oscillation wavelength at this time was 290 nm.
  • Example 6 is an electron beam excitation embedded laser that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure.
  • FIG. 7 is a schematic cross-sectional view of only the light emitting portion, and the electron beam source 10, the vacuum vessel 11, and the power sources 12 and 13 depicted in FIG.
  • 16 is an AlN substrate
  • 2 is a lower AlGaN cladding layer including an AlN buffer layer
  • 3 is an AlGaN-quantum well active layer including an Al (Ga) N guide layer
  • 4 is an upper AlGaN cladding layer.
  • the upper and lower AlGaN cladding layers are doped n-type.
  • Reference numerals 6 and 7 denote an insulating layer and a metal film layer having an AlGaN cladding layer as an opening, and the metal film layer is connected to a power source and kept at a voltage of Vg as in the first embodiment.
  • 14 is a semi-insulating AlN buried layer, and 15 is an n-type ohmic electrode. Electrons from above are irradiated onto the upper clad 4, but since the surrounding region is covered with the metal film layer 7 maintained at a voltage of Vg, electrons are stably applied to the upper clad 4 without being charged up. Is injected.
  • the semiconductor laser according to Example 6 was confirmed to oscillate with a low current of 20 mA at a voltage of ⁇ 20 kV to the electron source at room temperature.
  • the oscillation wavelength was 278 nm, and stable operation was obtained for 200 hours in a 3 mW APC (Auto Power Control) test.
  • Example 7 is an LED that emits light in the deep ultraviolet region. This is an example of an electron beam excitation type light emitting device having a resonance structure.
  • FIG. 8 is a schematic bird's-eye view
  • FIG. 9 is a cross-sectional view of the photonic crystal hole region therein.
  • FIGS. 8 and 9 are schematic views of only the light emitting section.
  • the electron beam source 10, the vacuum vessel 11, and the power supplies 12 and 13 depicted in FIG. 1 may be the same as those in the first embodiment.
  • 1 is a sapphire substrate
  • 2 is a lower n-type AlGaN cladding layer including an AlN buffer layer
  • 3 is an AlGaN-quantum well active layer including an Al (Ga) N guide layer
  • 4 is an upper n-type AlGaN cladding layer. It is.
  • 111 is an undoped semiconductor DBR layer comprising an undoped AlN layer and an undoped AlGaN layer.
  • 112 is a metal film layer in which photonic crystal holes are opened, and 113 is an opening portion of the photonic crystal structure.
  • the upper n-type cladding layer and the lower n-type cladding layer are grounded to 0 V using an ohmic contact electrode at a location away from the electron beam injection portion. Electrons come from above the substrate and are injected into the semiconductor layers 3 and 4 through the holes in the photonic crystal.
  • the photonic crystal portion and the DBR layer portion can be stably operated with high efficiency without being charged up.
  • the light from the active layer is reflected downward by the photonic crystal part and the DBR layer part and emitted to the sapphire substrate side.
  • the LED of this example emitted light with a central wavelength of 245 nm, and its maximum light output was 24 mW. In a reliability test at a constant light output of 12 mW, stable characteristics were obtained after 4000 hours.
  • the DBR layer 111 is undoped.
  • a similar effect can be obtained even in a structure in which a dielectric film equivalent to a thickness of ⁇ / 4n is inserted between the metal film layer using an n-type doped DBR layer. can get. The same effect can be obtained even when the DBR layer is formed of a dielectric film.
  • Examples 1 to 7 have described nitride semiconductors as semiconductors, other semiconductors such as InGaAsP and InGaAlAs that can be grown on an InP substrate, or InGaAlP and AlGaAs that can be grown on GaAs, can be similarly applied. Yes. The same applies to II-VI group semiconductors such as ZeSe and CdZnSe.
  • Examples 1, 2, and 4 describe an example of an edge emitting laser.
  • a highly reflective coating film is applied only to one side of the end face, and the opposite side of the stripe waveguide is bent to reflect the reflectance. It can be similarly applied to a super luminescence diode having a non-reflective coating film.
  • FIG. 10 is a cross-sectional view of an electron beam excitation light-emitting device stored in a vacuum container with a window.
  • FIG. 10 it is necessary to form 115 ultraviolet transmissive windows in a part of the vacuum vessel and to emit ultraviolet light out of the vacuum vessel 11.
  • reference numeral 114 denotes the semiconductor laser which is the light emitting portion described in the first to fourth and sixth embodiments.

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Abstract

On se heurtait jusqu'à présent au problème selon lequel si un film isolant ou autre était mis en place afin d'améliorer les caractéristiques d'un laser à semi-conducteur classique excité par faisceau d'électrons ou d'un dispositif à LED, les caractéristiques du dispositif se dégradaient en raison de l'accumulation de charge provoquée par un faisceau d'électrons. Dans un laser à semi-conducteur comprenant des couches semi-conductrices de nitrure (2, 3, 4, 5) formées sur un substrat de saphir, un film isolant (6) et un film métallique (7) sont empilés et disposés à côté d'une structure de ruban de nervure (5). Le film métallique (7) est connecté à une alimentation électrique (13) dont la tension est réglée à une valeur supérieure à une tension d'accélération égale à -Vd et inférieure ou égale à la tension de masse de 0 V. Des couches de gaine de type n supérieures et inférieures (2, 4) sont connectées à la masse par l'intermédiaire d'électrodes (8, 9).
PCT/JP2010/060601 2010-06-23 2010-06-23 Dispositif électroluminescent excité par faisceau d'électrons WO2011161775A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014007098A1 (fr) * 2012-07-02 2014-01-09 スタンレー電気株式会社 Source lumineuse laser en ultraviolet profond au moyen d'une excitation de faisceau électronique
JP2015005743A (ja) * 2013-06-18 2015-01-08 パロ・アルト・リサーチ・センター・インコーポレーテッドＰａｌｏ Ａｌｔｏ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ Ｉｎｃｏｒｐｏｒａｔｅｄ 電子ビームによりポンピングされる端面発光装置の構造およびそれを生産するための方法
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US10056735B1 (en) 2016-05-23 2018-08-21 X Development Llc Scanning UV light source utilizing semiconductor heterostructures

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EP2675024A3 (fr) * 2012-06-14 2015-03-04 Palo Alto Research Center Incorporated Laser à cavité verticale à émission de surface pompé par faisceau d'électrons
US9705288B2 (en) 2012-06-14 2017-07-11 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
US10153616B2 (en) 2012-06-14 2018-12-11 Palo Alto Research Center Incorporated Electron beam pumped vertical cavity surface emitting laser
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US10056735B1 (en) 2016-05-23 2018-08-21 X Development Llc Scanning UV light source utilizing semiconductor heterostructures

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