WO2011152356A1 - Agent de polissage et procédé de polissage - Google Patents

Agent de polissage et procédé de polissage Download PDF

Info

Publication number
WO2011152356A1
WO2011152356A1 PCT/JP2011/062387 JP2011062387W WO2011152356A1 WO 2011152356 A1 WO2011152356 A1 WO 2011152356A1 JP 2011062387 W JP2011062387 W JP 2011062387W WO 2011152356 A1 WO2011152356 A1 WO 2011152356A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
abrasive
layer
agent
insulating layer
Prior art date
Application number
PCT/JP2011/062387
Other languages
English (en)
Japanese (ja)
Inventor
竹宮　聡
靖之 高木
Original Assignee
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Publication of WO2011152356A1 publication Critical patent/WO2011152356A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • the present invention relates to an abrasive used in a manufacturing process of a semiconductor integrated circuit device (hereinafter sometimes referred to as a semiconductor device) and a polishing method. More particularly, the present invention relates to an abrasive for chemical mechanical polishing suitable for forming and planarizing a buried metal wiring, and a polishing method using the same.
  • copper As a wiring material, copper has attracted attention because of its low specific resistance and superior electromigration resistance compared to conventionally used aluminum alloys. Copper has a low vapor pressure of its chloride gas, and it is difficult to process into a wiring shape by reactive ion etching (RIE), so a damascene method is used to form wiring.
  • RIE reactive ion etching
  • CMP Chemical Mechanical Polishing
  • a barrier layer made of a tantalum compound such as tantalum, tantalum alloy or tantalum nitride is formed in order to prevent diffusion of copper into the insulating layer. Therefore, it is necessary to remove the exposed barrier layer by CMP except for the wiring portion where copper is embedded.
  • CMP the barrier layer is very hard compared to copper, a sufficient polishing rate cannot often be obtained. Therefore, as shown in FIG. 1, a two-step polishing method has been proposed which includes a first polishing step for removing an excess metal wiring layer and a second polishing step for removing an excess barrier layer.
  • FIG. 1 is a cross-sectional view showing a method of forming a buried wiring by CMP.
  • FIG. 1 (a) is before polishing
  • FIG. 1 (b) is after the first polishing step for removing the excess metal wiring layer
  • FIG. 1 (c) is in the middle of the second polishing step for removing the excess barrier layer.
  • FIG. 1 (d) shows the state after the second polishing step.
  • a cap layer made of an insulating material such as silicon dioxide may be formed between the insulating layer and the barrier layer.
  • FIG. 1A to FIG. 1D illustrate the case where there is a cap layer.
  • the cap layer may not be provided.
  • a groove for forming the buried wiring is formed in the insulating layer 2 on the substrate 1.
  • an excess portion of the metal wiring layer 5 is removed in a first polishing step.
  • an excess portion of the barrier layer 4 is removed in the second polishing step.
  • the metal wiring layer 5 called dishing 6 is reduced as shown in FIG. Therefore, in the second polishing step, as shown in FIG. 1 (c), the excess portion of the barrier layer 4 is completely removed, the cap layer 3 is further removed, and as shown in FIG. 1 (d), If necessary, it is necessary to cut the insulating layer 2 so as to have the same height (level) as the metal wiring layer 5 to achieve a high level of flatness.
  • the copper buried wiring 7 is formed.
  • FIG. 1D shows a state in which the cap layer 3 is completely removed and flattened.
  • CMP using a conventional abrasive has a problem that dishing and erosion of copper embedding (metal wiring layer 5) increase.
  • dishing refers to a state in which the metal wiring layer 5 is excessively polished and the central portion is depressed as indicated by reference numeral 6 in FIG. 1C and FIG. 2, and is likely to occur in a wide wiring portion. .
  • Erosion is likely to occur in thin wiring portions or dense wiring portions.
  • the erosion is an insulating layer of the wiring portion as compared with the insulating layer portion (Global portion) 9 having no wiring pattern. 2 is a phenomenon in which the insulating layer 2 is partially thinned due to excessive polishing. That is, an erosion 8 portion polished further than the polishing portion 10 of the global portion 9 is generated.
  • the cap layer 3 and the barrier layer 4 are not shown.
  • the polishing rate of the barrier layer 4 is lower than the polishing rate of the metal wiring layer 5, so that the copper in the wiring part is excessively polished while the barrier layer 4 is polished and removed, resulting in large dishing. 6 had occurred.
  • the polishing pressure applied to the barrier layer 4 and the insulating layer 2 below the high-density wiring portion is higher than that of the portion having a low wiring density, the degree of progress of polishing in the second polishing step is larger due to the wiring density. Different. As a result, the insulating layer 2 in the high-density wiring portion was excessively polished, and a large erosion 8 was generated. When dishing 6 or erosion 8 occurs, there is a problem that wiring resistance increases and electromigration easily occurs, and the reliability of the device is lowered.
  • the tantalum and tantalum compound used as the barrier layer 4 are difficult to chemically etch and have a higher hardness than copper, so that removal by mechanical polishing is not easy. If the hardness of the abrasive grains is increased in order to increase the polishing rate of the barrier layer 4, scratches are generated in the copper wiring having a lower hardness, and problems such as electrical defects are likely to occur. Further, when the concentration (content ratio) of abrasive grains in the abrasive is increased, it becomes difficult to maintain the dispersed state of the abrasive grains in the abrasive, resulting in problems such as sedimentation and gelation over time. Likely to happen.
  • BTA benzotriazole
  • Non-Patent Document 1 a corrosion inhibitor for copper and copper alloys
  • BTA benzotriazole
  • Non-Patent Document 1 a corrosion inhibitor for copper and copper alloys
  • BTA forms a dense film on the surface of copper and copper alloys, suppresses redox reactions to prevent etching, and is known to be effective as an additive for preventing dishing of copper wiring parts.
  • the use of a water-soluble polymer as a protective film forming agent for suppressing the dishing 6 of the metal wiring layer 5 has been studied. That is, the polishing rate ratio (metal layer / barrier layer) between the metal wiring layer 5 and the barrier layer 4 is large for the purpose of suppressing polishing of the barrier layer 4 and the insulating layer 2 while polishing and removing copper at high speed.
  • An abrasive having a large polishing rate ratio (metal layer / insulating layer) between the metal wiring layer 5 and the insulating layer 2 has been developed (see, for example, Patent Document 2).
  • these abrasives all relate to the first polishing step for polishing and removing the metal wiring layer 5 such as the copper wiring layer, and in the second polishing step, the cap layer 3 is removed at a high speed, and An abrasive that satisfies the requirement to suppress the polishing of the insulating layer 2 made of a low dielectric constant material as much as possible has not yet been found.
  • the barrier layer 4 is polished at a high speed in the second polishing step, and the metal wiring layer 5 is polished at an appropriate polishing rate. Furthermore, it is required to highly planarize the insulating layer 2 while cutting it.
  • the polishing agent for the first polishing step is mainly required to polish the metal wiring layer 5 at a high polishing rate, whereas the polishing agent for the second polishing step has a high barrier layer 4. Polishing at a polishing rate and polishing the insulating layer 2 at a higher polishing rate than the metal wiring layer 5 are required, and the required characteristics of both are greatly different.
  • the role of the second polishing step in CMP is to completely remove the unnecessary barrier layer 4 portion and reduce dishing 6 generated in the first polishing step.
  • the dishing 6 is removed by scraping only the barrier layer 4 in the second polishing process. It is also possible to eliminate the polishing of the metal wiring layer 5 and the insulating layer 2.
  • the thickness of the barrier layer 4 is as thin as 20 to 40 nm, and the dishing 6 is suppressed to a range smaller than the thickness of the barrier layer 4 in order to polish and remove the metal wiring layer 5 at a high speed in the first polishing process. It is extremely difficult.
  • the first polishing step if there is local variation in the polishing rate of the metal wiring layer 5, over-polishing is required to completely remove unnecessary wiring metal residues in the surface. It becomes more difficult to keep 6 small.
  • the second polishing step it is required to repair the dishing 6 larger than the film thickness of the barrier layer 4 generated in the first polishing step to realize high leveling.
  • the insulating layer 2 in the wiring portion is excessively polished as compared with the insulating layer portion (Global portion) 9 having no wiring pattern.
  • the layer 2 tends to be thin, in recent years, the reduction of the erosion 8 has become a major issue as the generation of semiconductors advances and the wiring portion becomes thinner.
  • the barrier layer 4 is directly formed thereon.
  • the barrier layer 4 is formed after the cap layer 3 made of, for example, silicon dioxide is formed on the insulating layer 2 made of a low dielectric constant material (hereinafter also referred to as a low dielectric constant insulating layer). Things have been done.
  • the relative dielectric constant of the low dielectric constant material constituting the insulating layer 2 is generally 3 or less
  • the relative dielectric constant of silicon dioxide formed by, for example, plasma CVD (chemical vapor deposition) is Since it is as high as 4, it is not preferable to leave the cap layer 3 at the time of planarization by polishing from the viewpoint of a low dielectric constant. That is, in the second polishing step, it is preferable to remove all the cap layer 3.
  • the polishing rate of the low dielectric constant insulating layer 2 should be significantly suppressed relative to the polishing rate of the cap layer 3. is necessary. However, it has been difficult to suppress the polishing rate of the low dielectric constant insulating layer 2 chemically and mechanically more fragile than the polishing rate of the cap layer 3 with conventional polishing agents.
  • the polishing rate of the low dielectric constant insulating layer 2 and the polishing rate of the silicon dioxide film as the cap layer 3 are (Hereinafter, referred to as a low dielectric constant insulating layer / silicon dioxide film selection ratio).
  • An object of the present invention is to provide an abrasive having excellent polishing performance suitable for planarization of embedded wiring in the manufacture of a semiconductor integrated circuit device. It is another object of the present invention to provide a polishing method having excellent polishing performance in a polishing process such as planarization of embedded wiring when manufacturing a semiconductor integrated circuit device.
  • a first aspect of the present invention is an abrasive for chemically and mechanically polishing a surface to be polished in the manufacture of a semiconductor integrated circuit device, comprising abrasive grains, an oxidizing agent, a protective film forming agent, an acid And an amine having a hydrocarbon group selected from an alkyl group having 6 to 20 carbon atoms, an aryl group, and an aryl-substituted alkyl group, and water.
  • the second aspect of the present invention is the abrasive according to the first aspect, wherein the amine having a hydrocarbon group is at least one selected from the group consisting of octylamine, dodecylamine and polyoxyethylene laurylamine. I will provide a.
  • a third aspect of the present invention is a method of supplying a polishing agent to a polishing pad, bringing a polishing target surface of a semiconductor integrated circuit device into contact with the polishing pad, and polishing by relative movement between the two,
  • a polishing method is provided in which the abrasive is the abrasive according to the first aspect or the second aspect.
  • the present invention it is possible to obtain an abrasive having excellent polishing performance suitable for planarization of embedded wiring in chemical mechanical polishing in the manufacture of a semiconductor integrated circuit device.
  • a cap layer made of a silicon dioxide film or the like is formed on a fragile low dielectric constant insulating layer, when the cap layer is completely removed to expose the low dielectric constant insulating layer, it is highly flat. A smooth surface.
  • a semiconductor integrated circuit device having a highly flattened multilayer structure can be obtained.
  • FIG. 1A to 1D are cross-sectional views of a semiconductor integrated circuit device schematically showing a polishing process at the time of forming a buried wiring by CMP.
  • FIG. 2 is a cross-sectional view of a semiconductor integrated circuit device for explaining dishing and erosion that occur when a buried wiring is formed by CMP.
  • FIG. 3 is a diagram showing an example of a polishing apparatus that can be used in the polishing method of the present invention.
  • the abrasive of the present invention is an abrasive for chemically and mechanically polishing a surface to be polished in the manufacture of a semiconductor integrated circuit device, and comprises abrasive grains, an oxidizing agent, a protective film forming agent, an acid, It contains an amine having a hydrocarbon group selected from an alkyl group having 6 to 20 carbon atoms, an aryl group, and an aryl-substituted alkyl group, and water.
  • the abrasive according to the present invention has a slurry shape.
  • the flat surface of the insulating layer having the embedded metal wiring layer can be obtained by using the abrasive of the present invention.
  • dishing and erosion can be suppressed by preferentially polishing the convex portion while suppressing preferential polishing of the concave portion.
  • the barrier layer is polished at a high polishing rate and the insulating layer (cap When the layer is present, the cap layer) can be polished at a higher polishing rate than the metal wiring layer. That is, the polishing performance suitable for the second polishing step described above can be exhibited.
  • the polishing agent according to the present invention when polishing the surface to be polished in which the cap layer, the barrier layer, and the metal wiring layer are formed in this order on the insulating layer, after removing the cap layer completely, The polished surface can be flattened while minimizing the amount of etching of the underlying insulating layer.
  • the polishing agent according to the present invention removes excess copper when polishing a surface to be polished in which a cap layer, a barrier layer, and a metal wiring layer are formed in this order on an insulating layer. It can use suitably for the 2nd grinding
  • the above-mentioned effects can be obtained, and scratches on the metal wiring layer can be reduced, so that it is easy to form embedded metal wiring with high reliability and excellent electrical characteristics. It becomes.
  • a high polishing rate can be realized, and the dispersion stability of the abrasive grains is also excellent.
  • the “surface to be polished” means an intermediate surface that appears in the process of manufacturing a semiconductor integrated circuit device.
  • the “surface to be polished” according to the present invention includes a metal wiring layer, a barrier layer, and an insulating layer. And / or a cap layer will be present.
  • the “metal wiring layer” in the present invention means a layer made of planar metal wiring, but does not necessarily indicate only a layer spread over one surface as shown in FIG. Layers as a set of individual wirings are also included as in c) and (d). Further, it can be considered as a “metal wiring layer” including a portion such as a via for electrically connecting the planar metal wiring to another portion.
  • polishing agent of this invention is explained in full detail.
  • the abrasive grains in the abrasive of the present invention can be appropriately selected from known abrasive grains. Specifically, particles made of at least one material selected from the group consisting of silica, alumina, cerium oxide (ceria), zirconium oxide (zirconia), titanium oxide (titania), tin oxide, zinc oxide and manganese oxide. Preferably there is.
  • silica those produced by a known method can be used.
  • colloidal silica obtained by hydrolyzing silicon alkoxide such as ethyl silicate and methyl silicate by a sol-gel method can be used.
  • colloidal silica obtained by ion-exchange of sodium silicate and fumed silica obtained by vapor phase synthesis of silicon tetrachloride in an oxygen and hydrogen flame can be used.
  • colloidal alumina can also be preferably used.
  • cerium oxide, zirconium oxide, titanium oxide, tin oxide, and zinc oxide produced by a liquid phase method or a gas phase method can also be preferably used.
  • the use of colloidal silica is preferable because the particle size is easily controlled and a high-purity product can be obtained.
  • the average primary particle size of the abrasive grains needs to be in the range of 5 to 300 nm from the viewpoint of polishing characteristics and dispersion stability. It is preferably in the range of 5 to 60 nm, more preferably in the range of 10 to 60 nm.
  • the average secondary particle size of the abrasive grains is preferably in the range of 8 to 300 nm.
  • the abrasive grains it is preferable to use those that are associated. The presence or absence of the association can be easily confirmed with an electron microscope.
  • the association ratio of the abrasive grains in the abrasive is particularly in the range of 1.5 to 5, the polishing rate of the insulating layer can be controlled without decreasing the polishing rate of the barrier layer.
  • the association ratio of the abrasive grains is defined as a value obtained by dividing the average secondary particle diameter of the abrasive grains in the abrasive slurry by the average primary particle diameter.
  • the average primary particle size is determined as a particle size in terms of equivalent sphere from the specific surface area of the particles.
  • the specific surface area of the particles is measured by a nitrogen adsorption method known as the BET method.
  • the average secondary particle diameter is the diameter of the average aggregate in the abrasive and is measured using, for example, a particle size distribution meter using dynamic light scattering.
  • the content (concentration) of abrasive grains in the abrasive of the present invention is preferably in the range of 0.1 to 20% by mass with respect to the total mass of the abrasive, and the polishing rate and the polishing rate within the wafer surface It is preferable to set appropriately considering the uniformity and dispersion stability. A range of 1 to 15% by mass of the total mass of the abrasive is more preferable.
  • the oxidizing agent in the abrasive of the present invention forms an oxide film on the surface of the barrier layer. By removing this oxide film from the surface to be polished by mechanical force, polishing of the barrier layer is promoted.
  • the oxidizing agent is at least selected from hydrogen peroxide, iodate, periodate, hypochlorite, perchlorate, persulfate, percarbonate, perborate and perphosphate.
  • One is preferred.
  • As iodate, periodate, hypochlorite, perchlorate, persulfate, percarbonate, perborate and perphosphate, ammonium salt, potassium salt, etc. are used. be able to.
  • hydrogen peroxide is preferable because it does not contain an alkali metal component and does not produce harmful by-products.
  • the content (concentration) of the oxidizing agent in the abrasive of the present invention is preferably in the range of 0.01 to 50% by mass with respect to the total mass of the abrasive. Further, it is preferable to set appropriately considering the polishing rate and the like. A range of 0.2 to 10% by mass with respect to the total mass of the abrasive is more preferable, and a range of 0.2 to 2% by mass is particularly preferable.
  • the protective film forming agent in the abrasive of the present invention means a chemical having a function of forming a protective film on the surface of the metal wiring layer in order to prevent dishing of the metal wiring layer.
  • the metal wiring layer is made of copper or a copper alloy
  • any material may be used as long as it suppresses elution of copper by forming a film by physically or chemically adsorbing on the copper surface.
  • the protective film forming agent is preferably a compound represented by the following formula (1).
  • R 1 represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a carboxylic acid group.
  • Examples of the compound represented by the formula (1) include BTA, tolyltriazole (TTA) in which the H atom at the 4 or 5 position of the benzene ring of BTA is substituted with a methyl group, and benzotriazole-4 substituted with a carboxylic acid group -Carboxylic acid and the like. These may be used alone or in combination of two or more.
  • the content (concentration) of the protective film forming agent in the abrasive of the present invention is preferably in the range of 0.001 to 5% by mass with respect to the total mass of the abrasive, from the viewpoint of polishing characteristics. A range of 01 to 1.0% by mass is more preferable, and a range of 0.05 to 0.5% by mass is particularly preferable.
  • the abrasive of the present invention contains an acid in addition to the above-described abrasive grains, oxidizing agent, and protective film forming agent.
  • the above-described oxidizing agent functions also as an acid, it is handled as an acid instead of an oxidizing agent.
  • an acid it is preferable to use one or more inorganic acids selected from nitric acid, sulfuric acid and hydrochloric acid.
  • nitric acid which is an oxo acid having oxidizing power and does not contain halogen.
  • the acid content (concentration) in the abrasive of the present invention is preferably in the range of 0.01 to 50% by mass, more preferably in the range of 0.01 to 20% by mass with respect to the total mass of the abrasive. A range of 0.02 to 0.5% by mass is particularly preferred.
  • a basic compound can be added together with the acid described above.
  • the basic compound ammonia, potassium hydroxide, quaternary ammonium hydroxide such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, monoethanolamine and the like can be used. Ammonia is preferred when it is preferable not to include an alkali metal.
  • an acid and a basic compound in any step of preparation of the abrasive
  • the polishing rate of the barrier layer can be increased, and the pH of the abrasive is in the desired range.
  • the content (concentration) of the basic compound in the abrasive is preferably in the range of 0.01 to 50% by mass, more preferably in the range of 0.01 to 10% by mass, based on the total mass of the abrasive. A range of 01 to 1% by mass is particularly preferred.
  • concentration of the acid and the basic compound in the abrasive when it becomes a salt means the concentration when it is assumed that the salt exists independently as an acid and a basic compound, respectively.
  • the pH of the abrasive according to the present invention is preferably in the range of 2-5.
  • the pH when silica is used as the abrasive is preferably 4 or less, and the pH is 2 to 4 depending on the desired polishing rate of the metal wiring layer (for example, copper wiring layer). Areas are used as appropriate.
  • a pH buffering agent may be used.
  • the pH buffering agent can be used without particular limitation as long as it has pH buffering ability, but is selected from succinic acid, citric acid, oxalic acid, phthalic acid, tartaric acid and adipic acid which are polyvalent carboxylic acids. One or more are preferred.
  • glycylglycine and alkali carbonate can also be used.
  • the content ratio (concentration) of the pH buffering agent in the abrasive is preferably 10% by mass or less with respect to the total mass of the abrasive. Note that the pH buffer is not treated as the acid or basic compound.
  • the amine having a hydrocarbon group selected from an alkyl group, an aryl group, and an aryl-substituted alkyl group having 6 to 20 carbon atoms in the polishing agent of the present invention can be obtained from silicon dioxide or the like without greatly scraping the low dielectric constant insulating layer.
  • This is a component (hereinafter, referred to as a low dielectric constant layer polishing inhibiting component) that is blended in order to give selectivity to the polishing rate between the cap layer and the low dielectric constant insulating layer.
  • an alkyl group having 6 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, and an H atom of the alkyl group are substituted with an aryl group.
  • An amine having a hydrocarbon group selected from aryl-substituted alkyl groups having 6 to 20 carbon atoms is used. Specifically, octylamine, dodecylamine, and polyoxyethylene laurylamine are exemplified, and it is preferable to use at least one selected from the group consisting of these amines. Such an amine does not deteriorate the dispersibility of the abrasive slurry.
  • the amine includes not only a primary amine having a primary amino group but also a secondary amine having a secondary amino group and a tertiary amine having a tertiary amino group.
  • the amine functions to suppress polishing of the low dielectric constant insulating layer because of the amino group (primary amino group, secondary amino group or tertiary amino group) which is a hydrophilic group of these compounds, and hydrophobicity.
  • This is considered to be the action of the hydrocarbon group (alkyl group having 6 to 20 carbon atoms, aryl group, aryl-substituted alkyl group). That is, the amine having a hydrophilic group and a hydrophobic group is interposed between an abrasive grain made of an oxide and a hydrophilic low-dielectric constant insulating layer having an organic group and a hydrophobic surface. This is thought to be due to the interaction.
  • the amine has a hydrophilic group and a hydrophobic group
  • the hydrophobic group has less than 6 carbon atoms
  • a sufficient effect of suppressing polishing of the low dielectric constant insulating layer does not occur.
  • the hydrocarbon group has 6 to 20 carbon atoms and does not have a primary to tertiary amino group (for example, polyoxyethylene alkyl ether)
  • a low dielectric constant Polishing of the insulating layer is suppressed, and the low dielectric constant insulating layer / silicon dioxide film selection ratio cannot be reduced.
  • the characteristic regarding stability will arise, such as the dispersibility of an abrasive
  • the polishing rate between the cap layer and the low dielectric constant insulating layer is selected, and the low dielectric constant insulating layer is exposed after the cap layer has been scraped.
  • An abrasive having the property that the polishing rate is significantly reduced is disclosed.
  • the dielectric constant k of the low dielectric constant insulating layer described in this publication is 2.7, and the use of an insulating layer having a lower dielectric constant (relative dielectric constant of 2.2) that has been increasingly demanded for use in recent years. It was difficult to apply to polishing.
  • the value of the selective ratio between the low dielectric constant insulating layer having a relative dielectric constant k of 2.2 and the cap layer made of silicon dioxide is sufficiently high.
  • the low dielectric constant insulating layer / silicon dioxide film selection ratio can be made 1.0 or less by the abrasive of the present invention. More preferably, it is 0.5 or less.
  • the cap layer and the metal wiring layer are included because the polishing rate is greatly reduced at the stage where the low dielectric constant insulating layer is exposed after the cap layer has been scraped off.
  • polishing the surface to be polished after completely removing the cap layer, it is possible to flatten the surface to be polished while minimizing the amount of cutting of the underlying low dielectric constant insulating layer It has excellent characteristics. Such characteristics are considered to be obtained by combining chemical polishing resulting from the chemical composition of the polishing agent and mechanical polishing caused by the abrasive grains in CMP technology, and could not be realized with conventional polishing agents. It is an effect.
  • the content (concentration) of the low dielectric constant layer polishing inhibiting component in the abrasive is sufficient to reduce the low dielectric constant insulating layer / silicon dioxide film selection ratio, so that the total mass of the abrasive is obtained.
  • the content is preferably in the range of 0.01 to 1% by mass, and preferably set appropriately in consideration of the desired selection ratio. A range of 0.02 to 0.5% by mass with respect to the total mass of the abrasive is more preferable, and a range of 0.04 to 0.2% by mass is even more preferable.
  • water is used to stably disperse the abrasive grains. Any water may be used as long as it does not violate the gist of the present invention, but it is preferable to use pure water, ion-exchanged water or the like. Water is preferably contained in the range of 40 to 98% by mass with respect to the total mass of the abrasive.
  • the abrasive of the present invention includes a primary alcohol having 1 to 4 carbon atoms, a glycol having 2 to 4 carbon atoms, and CH 3 CH (OH) CH in order to adjust fluidity, dispersion stability, and polishing rate.
  • a primary alcohol having 1 to 4 carbon atoms
  • a glycol having 2 to 4 carbon atoms and CH 3 CH (OH) CH
  • 2 O—C m H 2m-1 ether (where m is an integer of 1 to 4)
  • N-methyl-2-pyrrolidone N, N-dimethylformamide, dimethyl sulfoxide, ⁇ -butyrolactone and carbonic acid
  • the primary alcohol is preferably methyl alcohol, ethyl alcohol, or isopropyl alcohol.
  • glycol ethylene glycol and propylene glycol are preferable.
  • ether propylene glycol monomethyl ether and propylene glycol monoethyl ether are preferable.
  • N-methyl-2-pyrrolidone, N, N-dimethylformamide, dimethyl sulfoxide, ⁇ -butyrolactone, and propylene carbonate are polar solvents having a relative dielectric constant in the range of 30 to 65 at 25 ° C. Can be dissolved at a high concentration.
  • the abrasive according to the present invention contains water having a high surface tension
  • the addition of the organic solvent is effective for adjusting the fluidity.
  • the organic solvent acts as a good solvent for the compound represented by the formula (1), which is a protective film forming agent, so the content ratio (concentration) of the protective film forming agent in the abrasive is within a desired range. There is an advantage that it is easy to adjust.
  • the abrasive according to the present invention requires a surfactant, a chelating agent, a reducing agent, a viscosity imparting agent or a viscosity modifier, an anti-aggregating agent or a dispersing agent, a rust preventive agent, etc., unless it is contrary to the spirit of the present invention. Depending on the content, it can be appropriately contained. However, when these additives have the functions of an oxidizing agent, a protective film forming agent, an acid or a basic compound, they are handled as an oxidizing agent, a protective film forming agent, an acid or a basic compound.
  • the above-described constituent components are contained in the predetermined content ratio (concentration), the abrasive grains are uniformly dispersed, and other components are uniformly dissolved. Prepared and used.
  • a stirring and mixing method usually used in the production of an abrasive for example, a stirring and mixing method using an ultrasonic disperser, a homogenizer, or the like can be employed.
  • the abrasive according to the present invention does not necessarily have to be supplied to the polishing site as a mixture of all the pre-configured abrasive materials. When supplying to the place of polishing, the polishing material may be mixed to form the composition of the abrasive.
  • the polishing agent according to the present invention can also control the polishing rate of a metal wiring layer made of, for example, copper, it is suitable for obtaining a flat surface of an insulating layer having an embedded metal wiring layer in the manufacture of a semiconductor integrated circuit device. It is. In particular, it is suitable for polishing a surface to be polished formed by laminating a barrier layer and a metal wiring layer on an insulating layer. That is, the abrasive according to the present invention has both functions of high-speed polishing of the barrier layer and flattening of the insulating layer having the embedded metal wiring layer.
  • the barrier layer is a layer made of at least one material selected from the group consisting of tantalum, a tantalum alloy and a tantalum compound.
  • the barrier layer can also be applied to films made of other metals, etc., and even when a layer made of a metal or a metal compound other than tantalum, such as Ti, TiN, TiSiN, WN, etc., is used as the barrier layer. Effects can be obtained.
  • any known material may be used as the material constituting the insulating layer that is one of the objects to be polished by the abrasive according to the present invention.
  • a silicon dioxide film can be exemplified.
  • the silicon dioxide film one having a crosslinked structure of Si and O and having a ratio of the number of atoms of Si and O of 1: 2 is generally used, but other films may be used.
  • a film deposited by plasma CVD using tetraethoxysilane (TEOS) or silane gas (SiH 4 ) is generally known.
  • a film made of a low dielectric constant material having a relative dielectric constant of 3 or less has been used as an insulating layer for the purpose of suppressing signal delay.
  • a porous silica film or an organic silicon material (generally referred to as SiOC) film mainly composed of Si—O bonds and containing CH 3 bonds is known.
  • SiOC organic silicon material
  • the above-mentioned organosilicon material is an extension of the conventional technology as a process technology, and mass production technology with a wide range of application has been achieved by performing appropriate process tuning. Therefore, there is a demand for a technique for flattening a film using this low dielectric constant material, and the abrasive according to the present invention can be suitably used for that purpose.
  • Examples of the organic silicon material that is a low dielectric constant material include trade name Black Diamond 1 (relative permittivity 2.7, Applied Materials technology), trade name Coral (relative permittivity 2.7, Novellus Systems technology), Aurora 2. 7 (relative permittivity: 2.7, Japan ASM Co., Ltd.), and the like. Among them, a compound having a Si—CH 3 bond is preferably used. As an organic silicon material whose dielectric constant is further reduced than that of the above-mentioned material, a trade name Black Diamond 2x (relative dielectric constant 2.2, Applied Materials, Inc. technology) is known.
  • the abrasive according to the present invention can also be suitably used for a structure in which a cap layer is formed on an insulating layer.
  • a cap layer is formed on an insulating layer.
  • the low dielectric constant insulating layer is flattened without much shaving. Suitable for.
  • the selection ratio of the low dielectric constant insulating layer / cap layer specifically, the selection ratio of SiOC layer / silicon dioxide layer can be 1.0 or less.
  • the selection ratio of SiOC layer / silicon dioxide layer is preferably in the range of 0.04 to 0.50, and more preferably in the range of 0.05 to 0.30.
  • the cap layer is a groove for embedding a metal wiring layer in a chemically and mechanically fragile low dielectric constant insulating layer when the low dielectric constant material is used for the insulating layer to improve the adhesion between the insulating layer and the barrier layer. Is provided for use as a mask material when formed by etching. In addition, the cap layer is provided for the purpose of preventing deterioration of the low dielectric constant material.
  • a film having silicon and oxygen as constituent elements is generally used.
  • An example of such a film is a silicon dioxide film.
  • the silicon dioxide film a film having a crosslinked structure of Si and O and having a ratio of the number of atoms of Si and O of 1: 2 is generally used, but other films may be used.
  • a silicon dioxide film a film deposited by plasma CVD using tetraethoxysilane (TEOS) or silane gas (SiH 4 ) is known.
  • the abrasive according to the present invention uses a silicon dioxide film in which TEOS is deposited by CVD as a cap layer, and a trade name Black Diamond 1 (relative dielectric) which is a compound having a Si—CH 3 bond as a low dielectric constant organosilicon material.
  • TEOS TEOS
  • a trade name Black Diamond 1 relative dielectric
  • it can be particularly preferably used.
  • it can be used suitably also when using the product name Black Diamond 2x (relative permittivity 2.2) having a low relative permittivity.
  • the metal wiring layer to be polished by the abrasive according to the present invention is preferably a layer made of one or more materials selected from copper, copper alloys and copper compounds.
  • the abrasive of the present invention can also be applied to metals other than copper, such as metal films such as Al, W, Ag, Pt, and Au.
  • the polishing surface of the semiconductor integrated circuit device is brought into contact with the polishing pad while supplying the polishing agent to the polishing pad.
  • a method of polishing by relative motion between the two is preferable.
  • FIG. 3 is a diagram showing an example of a polishing apparatus that can be used in the polishing method of the present invention.
  • the polishing apparatus 20 supplies a polishing head 22 for holding a semiconductor integrated circuit device 21, a polishing surface plate 23, a polishing pad 24 attached to the surface of the polishing surface plate 23, and an abrasive 25 to the polishing pad 24.
  • a polishing agent supply pipe 26 is provided. While supplying the polishing agent 25 from the polishing agent supply pipe 26, the surface to be polished of the semiconductor integrated circuit device 21 held by the polishing head 22 is brought into contact with the polishing pad 24, and the polishing head 22 and the polishing surface plate 23 are relative to each other. It is comprised so that it may grind
  • the polishing head 22 may perform a linear motion as well as a rotational motion. Further, the polishing surface plate 23 and the polishing pad 24 may be as large as or smaller than the semiconductor integrated circuit device 21. In that case, it is preferable that the entire surface to be polished of the semiconductor integrated circuit device 21 can be polished by relatively moving the polishing head 22 and the polishing surface plate 23. Furthermore, the polishing surface plate 23 and the polishing pad 24 do not have to perform rotational movement, and may move in one direction, for example, by a belt type.
  • the polishing conditions of the polishing apparatus 20 are not particularly limited, but by applying a load to the polishing head 22 and pressing it against the polishing pad 24, it is possible to increase the polishing pressure and improve the polishing rate.
  • the polishing pressure is preferably about 0.5 to 50 kPa, and more preferably about 3 to 40 kPa from the viewpoint of preventing polishing defects such as uniformity of the polished surface of the semiconductor integrated circuit device 21 at the polishing rate, flatness, and scratches.
  • the number of rotations of the polishing surface plate 23 and the polishing head 22 is preferably about 50 to 500 rpm, but is not limited thereto.
  • the supply amount of the abrasive 25 is appropriately adjusted and selected depending on the material constituting the surface to be polished, the composition of the abrasive, each of the above polishing conditions, etc. For example, when polishing a wafer having a diameter of 200 mm, it is generally 100. A supply rate of about ⁇ 300 ml / min is preferred.
  • the polishing pad 24 may be made of a general nonwoven fabric, foamed polyurethane, porous resin, non-porous resin, or the like. Further, in order to promote the supply of the polishing agent 25 to the polishing pad 24 or to collect a certain amount of the polishing agent 25 on the polishing pad 24, the surface of the polishing pad 24 has a lattice shape, a concentric circle shape, a spiral shape, or the like. Groove processing may be performed.
  • the pad conditioner may be brought into contact with the surface of the polishing pad 24 and polishing may be performed while conditioning the surface of the polishing pad 24.
  • a groove such as a wiring pattern or a recess such as a via is formed in an insulating layer on a substrate, and then a barrier layer is formed.
  • abrasive (1-1) Each of the abrasives of Examples 1 to 11 was prepared as shown below. Specifically, nitric acid and a pH buffering agent shown in Table 1 were added to water, and amines E1 to E3, which are low dielectric constant layer polishing inhibiting components, were added and stirred for 10 minutes to obtain solution a. Moreover, BTA which is a protective film forming agent was dissolved in ethylene glycol (EG) which is a good solvent to obtain a liquid b having a solid content concentration of 40% by mass of the protective film forming agent.
  • EG ethylene glycol
  • amine E1 represents polyoxyethylene laurylamine
  • E2 represents octylamine
  • E3 represents dodecylamine.
  • the liquid b was added to the liquid a, and then colloidal silica in which silica was dispersed in water was gradually added, and then the basic compound KOH was gradually added to adjust the pH. Thereafter, an aqueous solution of hydrogen peroxide as an oxidizing agent was further added and stirred for 30 minutes to obtain an abrasive.
  • Table 1 shows the content (concentration: mass%) of each component, pH buffer, basic compound, and ethylene glycol (EG) used in each example with respect to the entire abrasive. Pure water was used as water.
  • Each abrasive of Comparative Examples 1 to 3 was prepared as shown below. That is, nitric acid and a pH buffer were added to water, and E4 to E6 were added instead of amines E1 to E3, followed by stirring for 10 minutes to obtain solution a. Moreover, BTA which is a protective film forming agent was dissolved in EG which is a good solvent to obtain a liquid b having a BTA solid content concentration of 40% by mass.
  • E4 used in Comparative Example 1 represents butylethanolamine
  • E5 used in Comparative Example 2 represents butyldiethanolamine
  • E6 used in Comparative Example 3 represents polyoxyethylene lauryl ether.
  • the liquid b was added to the liquid a, then colloidal silica was gradually added, and further KOH was gradually added to adjust the pH. Thereafter, an aqueous solution of hydrogen peroxide as an oxidizing agent was further added and stirred for 30 minutes to obtain an abrasive.
  • Table 1 shows the content (concentration: mass%) of each component, pH buffer, basic compound, and EG used in Comparative Examples 1 to 3 with respect to the entire abrasive. Pure water was used as water.
  • Table 1 shows the content (concentration: mass%) of each component, pH buffer, basic compound, and EG used in Comparative Examples 4 to 6 with respect to the entire abrasive. Pure water was used as water.
  • the average primary particle size of abrasive grains is determined from the specific surface area of particles obtained by drying an aqueous dispersion, and the equivalent spherical equivalent particle size As sought.
  • the specific surface area of the particles was measured by a BET single-point method, which is a nitrogen adsorption method, using Flowsob II2300 (manufactured by Shimadzu Corporation).
  • the average secondary particle size of the abrasive was measured with Microtrac UPA (Nikkiso Co., Ltd.).
  • the association ratio (average secondary particle size / average primary particle size) was determined. The results were as follows.
  • the abrasive grains of Examples 1 to 11 and Comparative Examples 1 to 4 had an average primary particle size of 29 nm, an average secondary particle size of 61 nm, and an association ratio of 2.1.
  • the abrasive grains of Comparative Example 5 had an average primary particle size of 17 nm, an average secondary particle size of 23 nm, and an association ratio of 1.4.
  • the abrasive grains of Comparative Example 6 had an average primary particle size of 35 nm, an average secondary particle size of 50 nm, and an association ratio of 1.4.
  • Polishing machine Fully automatic CMP machine MIRRA (manufactured by APPLIED MATERIALS) (Wafer size 200mm diameter) Small polishing machine: Nanofactor (manufactured by Nano Factor) (When wafer size is 45mm square) Polishing pressure: 14kPa Platen (plate) rotation speed: shown in Table 2. Head (substrate holding part) rotation speed: 80 rpm Abrasive supply rate: 200 ml / min Polishing pad: Hard pad, IC1400 (Rohm and Haas) Soft pad is H7000 (Fujibow)
  • A Metal wiring layer polishing rate evaluation wafer A wafer in which a Cu layer having a thickness of 1500 nm was formed on a substrate by plating was used.
  • B Wafer for barrier layer polishing rate evaluation A wafer in which a tantalum (Ta) layer having a thickness of 200 nm was formed on a substrate by a sputtering method was used.
  • C Cap layer polishing rate evaluation wafer A wafer in which a silicon dioxide (SiO 2 ) layer having a thickness of 800 nm was formed on a substrate by plasma CVD was used.
  • (D) Wafer for low dielectric constant insulating layer polishing rate evaluation A wafer in which a SiOC (A) layer having a thickness of 800 nm was formed by plasma CVD using Black Diamond 1 (relative dielectric constant 2.7) on a substrate was used. . In addition, a wafer was used in which a SiOC (B) layer having a thickness of 800 nm was formed on the substrate by plasma CVD using Black Diamond 2x (relative dielectric constant 2.2).
  • the polishing rate was calculated from the film thickness before and after polishing.
  • the metal wiring layer (Cu layer) and the barrier layer (Ta layer) were measured using a sheet resistance measuring device RS75 (manufactured by KLA Tencor) calculated from the surface resistance by the four-probe method.
  • a sheet resistance measuring device RS75 manufactured by KLA Tencor
  • an optical interference type fully automatic film thickness measuring device UV1280SE manufactured by KLA Tencor was used.
  • polishing agent of the comparative example 4 does not contain a low dielectric constant layer grinding
  • the abrasives of Comparative Example 5 and Comparative Example 6 do not contain a low dielectric constant layer polishing inhibiting component, and further, the pH of the abrasive slurry and the association ratio of the abrasive grains are out of the preferred ranges.
  • the effect of suppressing the polishing rate of the SiOC (A) layer, which is an insulating layer, is not sufficient.
  • a desired SiOC (A) layer / SiO 2 layer selection ratio (1.0 or less) is not obtained.
  • polishing agent for chemical mechanical polishing that is used for planarization of embedded wiring in the manufacture of a semiconductor integrated circuit device, having excellent polishing performance and good storage stability.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention a trait à un agent de polissage permettant de polir chimiquement et mécaniquement une surface devant être polie dans le cadre de la production d'un dispositif de circuit intégré à semi-conducteur. L'agent de polissage contient : des grains abrasifs ; un oxydant ; un agent permettant de former un film de protection ; un acide ; une amine dotée d'un groupe hydrocarbure qui est sélectionné dans le groupe comprenant un groupe alkyle, un groupe aryle et un groupe alkyle substitué aryle et qui est doté de 6 à 20 atomes de carbone ; et de l'eau.
PCT/JP2011/062387 2010-06-03 2011-05-30 Agent de polissage et procédé de polissage WO2011152356A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-128116 2010-06-03
JP2010128116A JP2013165088A (ja) 2010-06-03 2010-06-03 研磨剤および研磨方法

Publications (1)

Publication Number Publication Date
WO2011152356A1 true WO2011152356A1 (fr) 2011-12-08

Family

ID=45066723

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/062387 WO2011152356A1 (fr) 2010-06-03 2011-05-30 Agent de polissage et procédé de polissage

Country Status (3)

Country Link
JP (1) JP2013165088A (fr)
TW (1) TW201202402A (fr)
WO (1) WO2011152356A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104152107A (zh) * 2013-05-13 2014-11-19 深圳清华大学研究院 陶瓷材料用研磨剂
CN112204449A (zh) * 2018-06-14 2021-01-08 奥林巴斯株式会社 光偏转器及扫描型激光显微镜
EP3947580A4 (fr) * 2019-03-25 2022-12-14 CMC Materials, Inc. Additifs d'amélioration de la dispersion particulaires pour bouillie cmp

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013133198A1 (fr) 2012-03-05 2013-09-12 株式会社 フジミインコーポレーテッド Composition de polissage et procédé utilisant ladite composition de polissage pour fabriquer un substrat semi-conducteur composé
CN110948377B (zh) * 2018-09-25 2024-06-21 长鑫存储技术有限公司 化学机械研磨混合液及研磨方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004512681A (ja) * 2000-10-19 2004-04-22 フェロー　コーポレイション 化学機械的研磨スラリー及び研磨方法
JP2007318152A (ja) * 1998-06-26 2007-12-06 Cabot Microelectronics Corp 銅／タンタル基体に有用な化学的機械研磨スラリー
JP2009278061A (ja) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007318152A (ja) * 1998-06-26 2007-12-06 Cabot Microelectronics Corp 銅／タンタル基体に有用な化学的機械研磨スラリー
JP2004512681A (ja) * 2000-10-19 2004-04-22 フェロー　コーポレイション 化学機械的研磨スラリー及び研磨方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
JP2009278061A (ja) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104152107A (zh) * 2013-05-13 2014-11-19 深圳清华大学研究院 陶瓷材料用研磨剂
CN104152107B (zh) * 2013-05-13 2016-08-17 深圳清华大学研究院 陶瓷材料用研磨剂
CN112204449A (zh) * 2018-06-14 2021-01-08 奥林巴斯株式会社 光偏转器及扫描型激光显微镜
CN112204449B (zh) * 2018-06-14 2022-06-17 奥林巴斯株式会社 光偏转器及扫描型激光显微镜
EP3947580A4 (fr) * 2019-03-25 2022-12-14 CMC Materials, Inc. Additifs d'amélioration de la dispersion particulaires pour bouillie cmp

Also Published As

Publication number Publication date
JP2013165088A (ja) 2013-08-22
TW201202402A (en) 2012-01-16

Similar Documents

Publication Publication Date Title
EP1909312A1 (fr) Abrasif et processus pour produire une unité de circuit intégré à semi-conducteurs
KR100481651B1 (ko) 화학 기계 연마용 슬러리 및 반도체 장치의 제조 방법
US8062547B2 (en) CMP slurry, preparation method thereof and method of polishing substrate using the same
JP5361306B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
JP5327427B2 (ja) 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
TWI434955B (zh) 含鎢基材的化學機械平坦化方法
JP5472585B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
EP1930938A1 (fr) Agent de polissage, procédé de polissage de surface à polir, et procédé de fabrication de dispositif à circuit intégré semi-conducteur
KR20070001994A (ko) 연마제 및 연마 방법
US20080171441A1 (en) Polishing compound and method for producing semiconductor integrated circuit device
JPWO2007116770A1 (ja) 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
KR20100015627A (ko) 연마제 조성물 및 반도체 집적 회로 장치의 제조 방법
CN109531282B (zh) 用于钴的化学机械抛光方法
JP5333744B2 (ja) 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
EP2161737A1 (fr) Composition de polissage et procede de fabrication d'un dispositif de circuit integre a semi-conducteur
WO2011152356A1 (fr) Agent de polissage et procédé de polissage
JP2008124377A (ja) 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
JP4719204B2 (ja) 化学機械研磨用スラリおよび半導体装置の製造方法
JP2010161201A (ja) 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の製造方法
JP2010010717A (ja) 研磨剤および研磨方法
JP2010041027A (ja) 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009272418A (ja) 研磨剤組成物および半導体集積回路装置の製造方法
KR101197163B1 (ko) Ｃｍｐ슬러리
JP7375515B2 (ja) 化学機械研磨用組成物及び化学機械研磨方法
JP2013065858A (ja) 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11789759

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11789759

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP