WO2011145416A1 - 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ - Google Patents

酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ Download PDF

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WO2011145416A1
WO2011145416A1 PCT/JP2011/059344 JP2011059344W WO2011145416A1 WO 2011145416 A1 WO2011145416 A1 WO 2011145416A1 JP 2011059344 W JP2011059344 W JP 2011059344W WO 2011145416 A1 WO2011145416 A1 WO 2011145416A1
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titanium oxide
oxide particles
phase
titanium
silica
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French (fr)
Japanese (ja)
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慎一 大越
裕子 所
史吉 箱江
由英 角渕
橋本　和仁
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University of Tokyo NUC
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University of Tokyo NUC
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Priority to EP11783353.3A priority Critical patent/EP2573048B1/en
Priority to CN201180025163.XA priority patent/CN102906026B/zh
Priority to KR1020127033279A priority patent/KR101834583B1/ko
Priority to US13/699,082 priority patent/US9079782B2/en
Publication of WO2011145416A1 publication Critical patent/WO2011145416A1/ja
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    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
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    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
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    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
    • C09C1/3607—Titanium dioxide
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
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    • H10N50/00—Galvanomagnetic devices
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    • C01P2006/42—Magnetic properties

Definitions

  • the present invention relates to titanium oxide particles, a manufacturing method thereof, a magnetic memory, an optical information recording medium, and a charge storage type memory, and is suitable for application to, for example, an oxide containing Ti 3+ (hereinafter simply referred to as titanium oxide). It is a thing.
  • Ti 2 O 3 which is representative of titanium oxide, is a phase transition material having various interesting physical properties. For example, it is known that a metal-insulator transition and a paramagnetic-antiferromagnetic transition occur. Ti 2 O 3 is also known for its infrared absorption, thermoelectric effect, magnetoelectric (ME) effect, etc. In addition, in recent years, a magnetoresistive (MR) effect has also been found. Such various physical properties have been studied only in bulk bodies ( ⁇ m size) (see, for example, Non-Patent Document 1), and the mechanism is still unclear.
  • MR magnetoresistive
  • Titanium oxide particles capable of exhibiting unprecedented physical properties
  • a method for producing the same a magnetic memory using the same
  • an optical information recording medium an optical information recording medium
  • charge storage The purpose is to propose a type memory.
  • claim 1 of the present invention is a silica in which a silane compound is added to a mixed solution in which a titanium chloride aqueous solution and an ammonia aqueous solution are mixed, and the surface of the titanium hydroxide compound particles is coated with silica.
  • coated titanium hydroxide compound particles are produced, the particulate Ti 3 O 5 particle body of the silica-coated titanium hydroxide compound particles separated consists of Ti 3 O 5 generated by being fired from the mixed solution
  • the Ti 3 O 5 particle body has a surface covered with silica glass.
  • the Ti 3 O 5 particle main body maintains a paramagnetic metal state in a temperature range of 0 to 800K, and has a paramagnetic metal state of orthorhombic crystal in a temperature range of at least 500K. This is characterized by a monoclinic crystal structure in a paramagnetic metal state in a temperature range of at least 300K or less.
  • the third aspect of the present invention is characterized in that the silica glass covering the surface of the Ti 3 O 5 particle main body is removed.
  • a step of producing a mixed solution by mixing a titanium chloride aqueous solution and an ammonia aqueous solution to produce titanium hydroxide compound particles in the mixed solution, and a silane in the mixed solution.
  • Claim 5 of the present invention is characterized by comprising the step of removing the silica glass covering the surface of the Ti 3 O 5 particle body.
  • At least one of potassium hydroxide ethanol solution, sodium hydroxide aqueous solution and tetramethylammonium hydroxide aqueous solution is used to remove the Ti 3 O 5.
  • the silica glass is removed from the surface of the particle body.
  • a seventh aspect of the present invention includes a magnetic layer formed by fixing a magnetic material on a support, and the titanium oxide particles according to any one of the first to third aspects are used for the magnetic material. It is characterized by that.
  • the recording light for recording is condensed on the recording layer, whereby information is recorded on the recording layer, and the reading light for reading is condensed on the recording layer.
  • the recording layer may be provided with any one of claims 1 to 3.
  • the titanium oxide particles described in the item are used.
  • a ninth aspect of the present invention includes a charge storage layer formed by fixing a charge storage material on a support, and the titanium oxide particles according to any one of the first to third aspects are included in the charge storage material. Is used.
  • a magnetic memory using titanium oxide particles capable of expressing unprecedented new physical properties as a magnetic material can be provided.
  • an optical information recording medium using titanium oxide particles capable of exhibiting unprecedented new physical properties for the recording layer can be provided.
  • a charge storage type memory using titanium oxide particles capable of expressing new unprecedented physical properties as a charge storage material can be provided.
  • FIG. 2 is a schematic view showing a crystal structure of ⁇ -Ti 3 O 5 and a crystal structure of ⁇ -Ti 3 O 5 . It is a TEM image which shows the structure of the microstructure in which the titanium oxide particle is formed in the silica glass. It is the schematic where it uses for description until it produces a microstructure. It is a graph which shows the analysis result of the XRD pattern of a microstructure.
  • FIG. 3 is a schematic view showing the crystal structure of ⁇ -Ti 3 O 5 . It is the schematic where it uses for description of the separation process which isolate
  • Ti 3 O 5 is a graph showing the phase transition of the ⁇ -phase and ⁇ -phase due to the temperature change of the single crystal. Relationship between the ratio and the temperature of the charge-delocalized unit of Ti 3 O 5 single crystal is a schematic diagram showing the relationship between the ratio of free energy and the charge-delocalized unit Gibbs.
  • titanium oxide particles 2 Ti 3 O 5 particle body 3 silica glass 4 microstructure 10 titanium hydroxide compound particles 11 Silica 12 Silica-coated titanium hydroxide compound particles
  • FIG. 1 is a TEM image obtained by imaging titanium oxide particles 1 with a transmission electron microscope (TEM), and a plurality of titanium oxide particles 1 are dispersed without being bonded to each other. is doing.
  • Each of the plurality of titanium oxide particles 1 has a particle size of approximately 6 to 10 nm, and the outer shape of the nano-sized particles is substantially the same particle shape such as a cubic shape, a spherical shape, or an elliptical spherical shape. It consists of a Ti 3 O 5 particle body 2.
  • FIG. 1 is a TEM image of titanium oxide particles 1 having a particle size of about 6 to 10 nm.
  • titanium oxide particles 1 having a particle size of about 6 to 40 nm can also be produced.
  • a titanium oxide particle is used by using a dispersion liquid of tetramethyl ammonium hydroxide (TMAH). 1 is dispersed.
  • TMAH tetramethyl ammonium hydroxide
  • such a titanium oxide particle 1 has a composition of Ti 3 O 5 having a pseudo-brookite structure, the crystal structure can undergo phase transition by changing the temperature, and the entire temperature range (for example, 0 to 800 K). In this temperature range, it exhibits Pauli paramagnetism and can maintain a paramagnetic metal state.
  • a conventionally known bulk body made of Ti 3 O 5 hereinafter referred to as “conventional crystal” can be used in a temperature region of less than about 460 K at which phase transition to a non-magnetic semiconductor occurs. It has an unprecedented characteristic that it can maintain the state of a paramagnetic metal.
  • the titanium oxide particles 1 can be a monoclinic crystal phase (hereinafter also referred to as a ⁇ phase) in which Ti 3 O 5 maintains a paramagnetic metal state in a temperature range of about 300 K or less. .
  • the titanium oxide particles 1 begin to undergo a phase transition when the temperature exceeds about 300K, and the ⁇ phase and the orthorhombic ⁇ -phase in the paramagnetic metal state are mixed, and the temperature exceeds about 500K. In the region, the crystal structure can be only ⁇ phase.
  • Ti, b 3.994
  • unit cell density d 3.988 g / cm 3 Ti 3 O 5 (hereinafter referred to as ⁇ -Ti 3 O 5 ).
  • B 9.846 (3) ⁇
  • c 9.988 (4) ⁇
  • d 3.977 g / cm 3 can be ⁇ -Ti 3 O 5 .
  • the titanium oxide particles 1 according to the present invention are different from the PCT / JP2009 / 69973 manufacturing method (hereinafter simply referred to as the conventional manufacturing method) by the inventors of the present application, without using the reverse micelle method. It is characterized in that it is manufactured from a microstructure (described later) manufactured using only the method and the baking treatment.
  • a microstructure formed by dispersing a plurality of titanium oxide particles 1 in silica glass 3 having an amorphous structure. 4 is produced by a sol-gel method and a baking treatment. Thereafter, the silica glass 3 of the microstructure 4 is removed and only the plurality of titanium oxide particles 1 are taken out from the silica glass 3, whereby the entire surface of the Ti 3 O 5 particle body 2 is exposed to the outside. Titanium oxide particles 1 are produced.
  • FIG. 3 a method for producing the titanium oxide particles 1 covered with the silica glass 3 will be described, and then a separation process for separating the titanium oxide particles 1 from the silica glass 3 will be described. .
  • FIG. 3 is a TEM image obtained by imaging the microstructure 4 produced by the production method according to the present invention with a transmission electron microscope (TEM).
  • the finely divided titanium oxide particles 1 having a particle size of approximately 6 to 10 nm, for example, are generally dispersed and synthesized in the silica glass 3.
  • the microstructure 4 in which the titanium oxide particles 1 covered with the silica glass 3 are formed can be manufactured by the sol-gel method and the baking treatment without using the reverse micelle method as follows. it can.
  • a titanium chloride aqueous solution in which titanium chloride is dissolved in water is prepared.
  • titanium tetrachloride (TiCl 4 ) is applied as titanium chloride, and for example, a titanium chloride aqueous solution having a titanium tetrachloride concentration of about 31 mmol / dm ⁇ 3 is prepared.
  • ammonia (NH 3 ) is dissolved in water to prepare an aqueous ammonia solution having an ammonia concentration of about 13 mol / dm ⁇ 3 , for example.
  • a sol-like mixed solution 7 is prepared by stirring and mixing a titanium chloride aqueous solution (TiCl 4 aq) and an ammonia aqueous solution (NH 3 aq). At this time, a hydroxylation reaction occurs in the aqueous phase, and titanium hydroxide compound particles 10 made of Ti (OH) 4 can be generated in the aqueous phase 9 of the mixed solution 7.
  • a solution of a silane compound such as tetraethoxysilane (TEOS ((C 2 H 5 O) 4 Si)) is appropriately added to the mixed solution 7.
  • TEOS tetraethoxysilane
  • a hydrolysis reaction occurs in the mixed solution 7.
  • the reaction proceeds and the mixed solution 7 in a gel state is mixed with silica 11 with the surface of the titanium hydroxide compound particles 10 coated with silica 11.
  • Coated titanium hydroxide compound particles 12 can be produced.
  • the silica-coated titanium hydroxide compound particles 12 can be directly produced only by the sol-gel method step without going through the reverse micelle method step.
  • the dried silica-coated titanium hydroxide compound particles 12 (Ti (OH) 4 fine particles coated with silica 11) are placed in a hydrogen atmosphere (0.3 to 1.5 L / min, preferably about 0.3 L / min). min) at a predetermined temperature (about 1050 to 1250 ° C., preferably about 1163 ° C.) for a predetermined time (about 5 hours).
  • a predetermined temperature about 1050 to 1250 ° C., preferably about 1163 ° C.
  • the silica-coated titanium hydroxide compound particles 12 by the oxidation reaction inside the silica shell, reducing the Ti 4+, an oxide containing Ti 3+ Ti 3 O 5 (Ti 3+ 2 Ti 4+ O 5 ) particle bodies are formed in the silica 11.
  • a microstructure 4 in which a plurality of titanium oxide particles 1 composed of fine-particle Ti 3 O 5 particle bodies 2 having a uniform particle diameter are dispersed in silica glass 3 can be produced.
  • the coating with silica 11 can also serve to prevent sintering of particles.
  • FIG. 5 shows the diffraction angle on the horizontal axis and the diffraction X-ray intensity on the vertical axis.
  • a peak indicating SiO 2 silicon
  • the microstructure 4 has silica 11.
  • ⁇ a portion where a characteristic peak appears
  • it is different from the XRD pattern (not shown) of ⁇ -Ti 3 O 5 so that it is covered with silica glass 3. It was confirmed that the crystal structure of the titanium oxide particles 1 was not ⁇ -Ti 3 O 5 .
  • ⁇ -Ti 3 O 5 can be produced by the above-described “(2-1) Production method of titanium oxide particles covered with silica glass” as in the conventional production method.
  • a conventional crystal (a conventionally known bulk body made of Ti 3 O 5 ) is a phase change material, and when the temperature is higher than about 460 K, the crystal structure becomes ⁇ -Ti 3 O 5 ( ⁇ phase). When the temperature is lower than about 460K, it has been confirmed that the crystal structure becomes ⁇ -Ti 3 O 5 ( ⁇ phase). That is, the conventional crystal in a temperature region lower than about 460 K has a crystal structure belonging to the space group C2 / m as shown in FIG.
  • the conventional crystal that has become a ⁇ phase in a temperature region lower than about 460 K has a monoclinic crystal structure and has Curie paramagnetism due to lattice defects near 0 K, but has a slight magnetization, but is less than 460 K. It becomes a nonmagnetic ion in a low temperature region and can become a nonmagnetic semiconductor.
  • ⁇ -Ti 3 O 5 which is a composition of titanium oxide particles 1 in the present invention, also has a crystal structure different from the crystal structure of ⁇ -Ti 3 O 5 as shown in FIG. 2A. It can be seen that this is different from ⁇ -Ti 3 O 5 .
  • a potassium hydroxide ethanol solution (potassium hydroxide concentration 0.1 mol / dm ⁇ 3 ) (KOH / EtOH) in which potassium hydroxide is dissolved in ethanol is used.
  • KOH / EtOH potassium hydroxide ethanol solution
  • the microstructure 4 obtained by the above-described production method is added to the potassium hydroxide ethanol solution 20, the temperature of the potassium hydroxide ethanol solution 20 is kept at about 50 ° C., and left as it is for about 24 hours.
  • the silica glass 3 covering the entire surface of the titanium oxide particles 1 is removed from the surface of the titanium oxide particles 1.
  • the potassium hydroxide ethanol solution 20 to which the microstructure 4 is added is centrifuged at 15000 rpm for about 10 minutes, and the precipitate 22 precipitated in the container 21a is recovered.
  • the precipitate 22 is added and dispersed in the aqueous solution 23, it is centrifuged again at 26000 rpm for about 10 minutes to collect the precipitate that has precipitated in the container 21b, and this precipitate is washed twice with water. Wash once with ethanol.
  • the titanium oxide particles 1 generated by separating from the supernatant liquid 26 in the container 21c are collected, and the separation process is completed.
  • the potassium hydroxide ethanol solution 20 is applied as the etching solution.
  • the present invention is not limited to this, and the silica glass 3 can be removed from the surface of the titanium oxide particles 1.
  • various etching solutions such as a sodium hydroxide aqueous solution, a tetramethylammonium hydroxide aqueous solution, or a mixed solution thereof may be applied.
  • the microstructure 4 is added to the sodium hydroxide aqueous solution (sodium hydroxide concentration 3 mol / dm -3 ), and the temperature of the sodium hydroxide aqueous solution is reduced to about
  • the silica glass 3 covering the entire surface of the titanium oxide particle 1 can be removed from the surface of the titanium oxide particle 1 by keeping it at 50 ° C. and leaving it for about 6 hours.
  • the microstructure 4 is added to a tetramethylammonium hydroxide aqueous solution (tetramethylammonium hydroxide 1 mol / dm -3 ), and the tetrahydroxide hydroxide is added.
  • the silica glass 3 covering the entire surface of the titanium oxide particles 1 can be removed from the surface of the titanium oxide particles 1 by keeping the temperature of the aqueous methylammonium solution at about 70 ° C. and leaving it for about 48 hours.
  • Titanium Oxide Particles Titanium oxide particles 1 from which silica glass 3 has been removed by the manufacturing method described above have the following characteristics.
  • the XRD pattern of the titanium oxide particles 1 from which the silica glass 3 was removed was also different from the XRD pattern (not shown) of ⁇ -Ti 3 O 5 .
  • the same peak as TiO 2 called High-pressure phase appears (indicated by “ ⁇ ” in FIG. 8), and this High-pressure phase TiO 2 is expressed only by about 40%. It could be confirmed.
  • a conventional crystal in an extremely narrow temperature region near about 460 K has a crystal structure different from the ⁇ phase and the ⁇ phase, and the XRD pattern is analyzed for the crystal structure at this time.
  • the characteristic peak of the pattern is compared with the characteristic peak of the XRD pattern in FIG. 5 and FIG. 8, it almost coincides with the peak of the XRD pattern of ⁇ -Ti 3 O 5 according to the present invention. Therefore, in the titanium oxide particles 1 according to the present invention, ⁇ -Ti 3 O 5 that is expressed only in an extremely narrow temperature range of about 460 K in the conventional crystal is stably expressed even in a wide temperature range of about 0 to 300 K. I understand that.
  • the conventional crystal becomes a ⁇ phase in a temperature range lower than about 460 K.
  • the conventional crystal has a monoclinic crystal structure, and 0 K Although it becomes Curie paramagnetism due to lattice defects in the vicinity and there is a slight magnetization, it can become a nonmagnetic ion in a temperature region lower than 460K and become a nonmagnetic semiconductor.
  • the titanium oxide particles 1 of the present invention differ from conventional crystals in that the crystal structure does not undergo phase transition to ⁇ -Ti 3 O 5 in the vicinity of about 460 K when the temperature is lowered from a high temperature. It undergoes a phase transition to Ti 3 O 5 and exhibits a paramagnetic metal-like behavior, and the characteristics of a paramagnetic metal close to ⁇ -Ti 3 O 5 can always be maintained in all temperature ranges.
  • the titanium oxide particles 1 of the present invention are Pauli paramagnetic in all temperature ranges from 0 to 800 K because the crystal structure undergoes a phase transition from ⁇ phase to ⁇ phase due to temperature change, and behave like a paramagnetic metal. The state indicating is maintained.
  • a part of the crystal structure undergoes a phase transition from the ⁇ phase to the ⁇ phase by applying pressure.
  • the titanium oxide particles 1 undergo a phase transition from the ⁇ phase to the ⁇ phase even at a relatively weak pressure, and the ratio of the phase transition from the ⁇ phase to the ⁇ phase gradually increases as the applied pressure is increased.
  • the titanium oxide particles 1 partly transformed into the ⁇ phase by applying pressure are heated to increase the temperature, the ⁇ phase and the ⁇ phase change into the ⁇ phase in a predetermined temperature range. To do. Furthermore, when the titanium oxide particles 1 thus phase-transformed into the ⁇ phase are cooled and the temperature is lowered again, the titanium oxide particles 1 are again phase-transformed into the ⁇ phase. That is, the titanium oxide particles 1 according to the present invention can change the crystal structure from the ⁇ phase to the ⁇ phase by applying pressure, and the crystal structure can be changed from the ⁇ phase to the ⁇ phase and further from the ⁇ phase by temperature change. The phase can be changed again to the ⁇ phase.
  • (3-6) Light Irradiation Effect of Titanium Oxide Particles A predetermined sample produced by applying a predetermined pressure to a powder sample comprising a plurality of titanium oxide particles 1 (hereinafter referred to as ⁇ -Ti 3 O 5 powder sample) In a pellet sample having a shape, when a predetermined light is irradiated, the portion irradiated with the light is discolored and changed from ⁇ -Ti 3 O 5 to ⁇ -Ti 3 O 5 .
  • the titanium oxide particles 1 according to the present invention have a characteristic of undergoing a light-induced phase transition from a ⁇ phase to a ⁇ phase at room temperature when irradiated with predetermined light.
  • the particles are washed and dried, and fired at a predetermined temperature to form fine-particle titanium oxide particles 1 covered with the silica glass 3. it can.
  • the silica-coated titanium hydroxide compound particles 12 can be easily produced only by the sol-gel method, and the silica glass 3 can be obtained simply by baking the silica-coated titanium hydroxide compound particles 12.
  • the titanium oxide particles 1 covered with can be produced.
  • PCT / JP2009 / 69973 by the inventors of the present application has a composition of Ti 3 O 5 and maintains a paramagnetic metal state in a temperature range of 0 to 800 K and covers silica glass as in the present invention. Although broken titanium oxide particles can be produced, the reverse micelle method is used in the production process.
  • a surfactant eg, cetyltrimethylammonium bromide
  • a solution having an oil phase composed of octane and 1-butanol according to the reverse micelle method.
  • CTAB C 16 H 33 N (CH 3 ) 3 Br
  • titanium chloride are dissolved to prepare a raw micelle solution having an aqueous phase 6 containing titanium chloride in the oil phase.
  • a surfactant and an aqueous ammonia solution are mixed with a solution having an oil phase composed of octane and 1-butanol in accordance with the reverse micelle method, in addition to the production of the raw micelle solution.
  • a neutralizer micelle solution having an aqueous phase 7 containing in the oil phase is prepared, and then the sol-gel method is performed, and by mixing these raw micelle solution and neutralizer micelle solution, Titanium hydroxide compound particles made of Ti (OH) 4 are generated.
  • the production method of the present invention does not use the reverse micelle method described above, and the silica-coated titanium hydroxide compound particles 12 can be directly produced by the sol-gel method. Therefore, the octane used in the reverse micelle method is used. In addition, 1-butanol and a surfactant are no longer required, and accordingly, the cost can be significantly reduced to about 30 to 40 times that of the conventional manufacturing method.
  • silica-coated titanium hydroxide compound particles 12 can be produced using all water without using any solution having an oil phase, the burden on the environment can be reduced. Further, since the silica-coated titanium hydroxide compound particles 12 can be produced using only a sol-gel method without going through the reverse micelle process, the production burden is reduced compared with the conventional production method, and the mass Can be produced.
  • the titanium oxide particles 1 covered with the silica glass 3 are added to the potassium hydroxide ethanol solution 20 and the temperature of the potassium hydroxide ethanol solution 20 is kept at about 50 ° C. Leave for about 24 hours.
  • the titanium oxide particles 1 covered with the silica glass 3 are added to a sodium hydroxide aqueous solution instead of the potassium hydroxide ethanol solution 20 and kept at about 50 ° C. for about 6 hours.
  • the titanium oxide particles 1 covered with the silica glass 3 are added to a tetramethylammonium hydroxide aqueous solution instead of the potassium hydroxide ethanol solution 20 and kept at about 70 ° C. for about 48 hours.
  • the silica glass 3 which covered the whole surface of the titanium oxide particle 1 can be removed from the surface of the said titanium oxide particle 1, and the titanium oxide particle 1 is isolate
  • the surface of the titanium hydroxide compound particles 10 is covered with the silica 11 in the mixed solution 7 in the manufacturing process.
  • the surface of the titanium hydroxide compound particles 10 has a uniform and smooth surface with little unevenness.
  • the titanium oxide particles 1 since the titanium hydroxide compound particles 10 are fired in this state, and the titanium oxide particles 1 are formed from the titanium hydroxide compound particles 10, the titanium oxide particles 1 also have a small particle size.
  • the surface can be formed on a uniform and smooth surface with little unevenness. Therefore, in this manufacturing method, by removing the silica glass 3 from the surface of the titanium oxide particles 1, the titanium oxide particles 1 composed of the Ti 3 O 5 particle main body 2 having a small particle size and a uniform and smooth surface are generated. it can.
  • the titanium oxide particles 1 produced by such a production method become a ⁇ phase at a low temperature range, an ⁇ phase at a high temperature range, and even if the temperature is lowered from a high temperature, even if the temperature becomes 460 K or less, the conventional crystal As described above, the phase transition to the ⁇ phase, which is a monoclinic crystal phase in which the state of the paramagnetic metal is maintained, is not performed to the ⁇ phase having the characteristics of a nonmagnetic semiconductor.
  • the titanium oxide particles 1 according to the present invention can always maintain the characteristics of the paramagnetic metal even in a low temperature range of 460 K or less.
  • the composition of Ti 3 O 5 in all temperature ranges from 0 to 800 K, unlike the conventional bulk body in which the phase transitions to a nonmagnetic semiconductor and a paramagnetic metal at a temperature of about 460 K. Therefore, it is possible to provide titanium oxide particles 1 that exhibit paramagnetic metal-like behavior and can exhibit unprecedented new physical properties that can always maintain paramagnetic metal-like characteristics.
  • Such a titanium oxide particle 1 is capable of phase transition of the crystal structure of ⁇ -Ti 3 O 5 to the crystal structure of ⁇ -Ti 3 O 5 by applying pressure at room temperature.
  • the titanium oxide particles 1 since the ratio of phase transition from the ⁇ phase to the ⁇ phase gradually increases as the applied pressure is increased, the titanium oxide particles 1 have a ratio between the ⁇ phase and the ⁇ phase by adjusting the applied pressure. Can be adjusted.
  • the ⁇ phase and the remaining ⁇ phase are changed to the ⁇ phase in a predetermined temperature range. Phase transition can be performed.
  • the ⁇ phase can be changed again to the ⁇ phase by cooling and lowering the temperature. .
  • the crystal structure of ⁇ -Ti 3 O 5 can be phase-transformed to a crystal structure composed of ⁇ -Ti 3 O 5 by irradiating light at room temperature. Even in this case, the titanium oxide particles 1 can change the ⁇ phase and the ⁇ phase to the ⁇ phase in a temperature range of about 460 K or more by increasing the temperature by applying heat. By cooling and lowering the temperature, the ⁇ phase can be changed to the ⁇ phase again.
  • the titanium oxide particles 1 can be composed only of Ti having high safety, and further, since the titanium oxide particles 1 are formed only from inexpensive Ti, it is possible to reduce the material cost as a whole.
  • titanium oxide particles 1 can be used for the following uses based on the optical characteristics, electrical conduction characteristics, and magnetic characteristics of the titanium oxide particles 1.
  • the titanium oxide particles 1 according to the present invention have a ⁇ -phase crystal structure having the characteristics of a paramagnetic metal when the temperature is lower than about 460 K.
  • light, pressure, electromagnetic By applying an external stimulus such as a magnetic field, the crystal structure can be changed to a ⁇ phase having the characteristics of a nonmagnetic semiconductor, and the magnetic characteristics can be varied.
  • the horizontal axis represents temperature
  • the vertical axis represents any one of magnetic susceptibility, electrical conductivity, or reflectance.
  • the paramagnetic metal is maintained from the low temperature range to the high temperature range, so that the magnetic susceptibility, electrical conductivity, and reflectivity are kept relatively high from the low temperature range to the high temperature range.
  • the ⁇ phase whose crystal structure has been changed by an external stimulus has the characteristics of a nonmagnetic semiconductor, and therefore has lower magnetic susceptibility, electrical conductivity, and reflectance than the ⁇ phase and ⁇ phase.
  • the magnetic susceptibility, electrical conductivity, and reflectance can be changed by giving an external stimulus.
  • the titanium oxide particles 1 are changed to the ⁇ phase by being applied with an external stimulus, the titanium oxide particles 1 are changed to an ⁇ phase crystal structure having the characteristics of a paramagnetic metal by raising the temperature. As the temperature is lowered, the crystal structure can be changed from the ⁇ phase to the ⁇ phase again.
  • the titanium oxide particles 1 can change the crystal structure from the ⁇ phase to the ⁇ phase by an external stimulus, and can change the phase from the ⁇ phase to the ⁇ phase and from the ⁇ phase to the ⁇ phase again by temperature change. It can be used for optical switching, a magnetic memory, a charge storage memory, an optical information recording medium, and the like using such a characteristic.
  • the surface thereof has few irregularities and the particle size thereof is small, and can be formed in advance so as to be approximately uniform in a certain size of, for example, about 6 to 10 nm. Can be easily separated. Therefore, when the titanium oxide particles 1 separated from the silica glass 3 are formed into a film shape as a recording layer in a magnetic memory, a charge storage type memory, an optical information recording medium, or the like, they become fine particles having a small particle diameter, and The surface can be flattened by reducing the unevenness of the recording surface by the amount of unevenness on the surface, and the film thickness of the recording layer can be easily made uniform.
  • the optical information recording medium using the titanium oxide particles 1 according to the present invention toxic substances such as germanium, antimony, and tellurium used in, for example, Blu-ray® Disc (registered trademark, hereinafter referred to as BD) are used. Since it is not used, the toxicity is reduced correspondingly and the cost can be reduced. Such an optical information recording medium will be described in detail later.
  • the titanium oxide particles 1 are externally stimulated with predetermined light at room temperature, and the crystal structure is changed from the ⁇ phase, which is a paramagnetic metal, to the ⁇ phase, which is a nonmagnetic semiconductor, by the external stimulation.
  • the titanium oxide particles 1 are subjected to external stimulation by light, pressure, electromagnetic, or magnetic field at room temperature, and change the crystal structure from the ⁇ phase that is a paramagnetic metal to the ⁇ phase that is a nonmagnetic semiconductor by the external stimulation.
  • the titanium oxide particles 1 are used as a magnetic material, and a magnetic layer in which this magnetic material is fixed to a support is formed.
  • the magnetic memory changes the crystal structure from ⁇ -Ti 3 O 5, which is a paramagnetic metal, to ⁇ -Ti 3 O 5 , which is a nonmagnetic semiconductor, by the external stimulus.
  • ⁇ -Ti 3 O 5 which is a paramagnetic metal
  • ⁇ -Ti 3 O 5 which is a nonmagnetic semiconductor
  • the titanium oxide particles 1 having such electric conduction characteristics are dispersed in the insulator, the electric charges can be moved by hopping conduction or tunnel conduction by the titanium oxide particles 1. Therefore, the titanium oxide particles 1 can be used for a charge storage layer such as a floating gate of a charge storage type memory such as a flash memory. Thus, a charge storage type memory using a charge storage layer using the titanium oxide particles 1 as a charge storage material can be provided.
  • the titanium oxide particles 1 have magnetic properties and electrical conduction properties themselves, they have a novel magnetoelectric (ME) effect, and can be used for techniques using these ME effects.
  • the titanium oxide particles 1 can also be used for high-speed switching due to transient photocurrent due to coupling between optical characteristics and electrical conduction characteristics.
  • the irradiated portion irradiated with the light is changed from the ⁇ phase to the ⁇ phase again.
  • the irradiated portion where the light is irradiated returns from the ⁇ phase to the ⁇ phase again.
  • the titanium oxide particles 1 repeatedly undergo phase transition from the ⁇ phase to the ⁇ phase and from the ⁇ phase to the ⁇ phase each time light is irradiated.
  • ⁇ phase and ⁇ phase semiconductors
  • the ratio (x) of charge localized units (Ti 3+ Ti 4+ Ti 3+ O 5 ) and charge delocalized units ((Ti) 3 ⁇ 1/3 O 5 ) was considered as an order parameter.
  • the Gibbs free energy G in the phase transition between the ⁇ phase and the ⁇ phase is described as the following equation (1).
  • the Gibbs free energy G of the ⁇ phase (charge localized system) is taken as the energy standard, x is the proportion of charge delocalized units, ⁇ H is the transition enthalpy, ⁇ S is the transition entropy, and R is Gas constant, ⁇ is an interaction parameter, and T is temperature.
  • the transition enthalpy ⁇ H of ⁇ and ⁇ phases is approximately 13 kJ mol ⁇ 1 and the transition entropy ⁇ S is approximately 29 J K ⁇ 1 mol ⁇ 1 .
  • the Gibbs free energy G was calculated using these values, and the relationship between the Gibbs free energy G, the ratio x of the charge delocalized units, and the temperature was examined. As shown in FIGS. The relationship was confirmed.
  • the Gibbs free energy G is calculated according to the above-described equation 1, and the relationship between the Gibbs free energy G, the charge delocalized unit ratio x, and the temperature is examined. A relationship as shown in FIGS. 13A and 13B was confirmed.
  • FIG. 13B in ⁇ -Ti 3 O 5 , an energy barrier exists between the charge localized system (mainly ⁇ phase) and the charge delocalized system (mainly ⁇ phase and ⁇ phase) in the entire temperature range. I was able to confirm. The presence of the energy barrier, ⁇ -Ti 3 O 5 after metastasis ⁇ phase, not to transition to the ⁇ phase even after lowering the temperature, good temperature dependence of ⁇ -Ti 3 O 5 nanocrystalline Can be explained.
  • an external stimulus such as pulsed light or CW light is required as shown in FIG. 13A and 13B show that the ⁇ phase becomes a true stable phase at 460 K or less in the thermal equilibrium state.
  • this photo-induced phase transition was caused by phase collapse from a seemingly stable ⁇ phase to a truly stable ⁇ phase by irradiation with a pulsed laser beam of 532 nm. be able to.
  • the optical absorption of the ⁇ phase is metal absorption, it is understood that ultraviolet light to near infrared light (laser light of 355 to 1064 nm) is effective for this metal-semiconductor transition.
  • the return reaction from the ⁇ phase to the ⁇ phase is considered to be due to the photo-thermal process.
  • the photo-induced reverse phase transition from ⁇ phase to ⁇ phase is caused by excitation from Ti d orbitals to other Ti d orbitals in the ⁇ phase band gap, and then transitions directly to ⁇ phase, It was found that after being heated to ⁇ phase thermally, it was rapidly cooled to ⁇ phase.
  • Titanium oxide particles 1 having a small particle size and few irregularities on the surface, as shown in FIG.
  • the titanium oxide particles 1 can be used for a recording layer of an optical information recording medium such as CD (Compact Disc), DVD (Digital Versatile Disc), and BD (Blu-ray Disc).
  • the optical information recording medium can perform three steps, ie, initialization of the recording layer, recording of information on the recording layer, and reproduction of information from the recording layer.
  • the optical information recording medium initializes the entire recording layer of the optical information recording medium or a part thereof as preparation for recording information.
  • the recording layer is initialized by irradiating the optical information recording medium from one side of the recording layer with the initialization light from the initialization light source of the optical information recording / reproducing apparatus.
  • the initialization light has sufficient energy to transition to the ⁇ phase even if the irradiated portion before the initialization light irradiation is either the ⁇ phase or the ⁇ phase.
  • the phase is changed from the ⁇ phase to the ⁇ phase, further from the ⁇ phase to the ⁇ phase, and from the ⁇ phase to the ⁇ phase, and further from the ⁇ phase to the ⁇ phase.
  • the optical information recording medium for example, when the reflectance of the return light when irradiated with light and the code “0” or “1” are associated with each other, at this stage, a uniform code is obtained at any location of the optical information recording medium. Since it is “0” (or code “1”), no information is recorded.
  • the recording light for recording having a predetermined light intensity is condensed in the recording layer by the optical information recording / reproducing apparatus.
  • the crystal structure of the titanium oxide particles 1 changes in a local range centering on the target position, and the phase transition from the ⁇ phase to the ⁇ phase occurs.
  • the refractive index in the vicinity of the focal point ( ⁇ phase) and its surroundings ( ⁇ phase) will be different. As a result, a recording mark formed by phase transition of the titanium oxide particles 1 from the ⁇ phase to the ⁇ phase is formed on the recording layer of the optical information recording medium.
  • reading light for reading having a predetermined light intensity is condensed in the recording layer from the optical information recording / reproducing apparatus.
  • the return light returning from the recording layer is detected by the light receiving element of the optical information recording / reproducing apparatus, and the difference in reflectance caused by the difference in the crystal structure of the titanium oxide particles 1 (the presence or absence of the recording mark).
  • the information recorded on the recording layer can be reproduced.
  • the readout light used here has such a light intensity that when the recording layer is irradiated, the titanium oxide particles 1 of the recording layer are not phase-shifted from the ⁇ phase to the ⁇ phase.
  • the recording mark is formed in the state in which the titanium oxide particles 1 are in the ⁇ phase.
  • the present invention is not limited thereto, and the titanium oxide particles 1
  • the state in which the ⁇ phase is reached may be a state in which a recording mark is formed.
  • the recording light, the reading light, and the initialization light may have a wavelength of 355 to 1064 nm.
  • FIG. 16 shows an outline when the recording layer 40 of the optical information recording medium used for near-field light is formed by the titanium oxide particles 1 separated from the silica glass 3. The figure is shown. In this case, recording / reproduction is performed by irradiating the recording layer 40 with near-field light L1 emitted from the optical pickup.
  • FIG. 17 is close to an image when the titanium oxide particles 1 shown in FIG. 1 are irradiated with a light spot S1 having a diameter of about 300 nm used in a general optical information recording / reproducing apparatus.
  • An image when a light spot S2 having a diameter of about 8 nm of field light is irradiated is shown.
  • the recording layer 40 is formed from a plurality of titanium oxide particles 1 having a particle size of about 6 to 10 nm
  • the recording density is higher than that of a conventional BD. Improvements can be made.
  • this invention is not limited to this embodiment, A various deformation
  • a microstructure in which titanium oxide particles 1 comprising a Ti 3 O 5 particle body 2 having a composition of Ti 3 O 5 and maintaining a paramagnetic metal state in a temperature range of 0 to 800 K are covered with silica glass 3.
  • various conditions such as various conditions of the sol-gel method (titanium tetrachloride concentration and ammonia concentration, etc.), various conditions such as the firing time and temperature in the firing treatment, and the hydrogen atmosphere are applied. May be.
  • the case where the titanium oxide particles 1 from which the silica glass 3 is removed is applied to optical switching, magnetic memory, charge storage type memory, optical information recording medium, etc. has been described.
  • the titanium oxide particles 1 covered with the silica glass 3 may be applied to optical switching, magnetic memory, charge storage type memory, optical information recording medium, or the like. That is, with respect to the titanium oxide particles 1 covered with the silica glass 3, as with the titanium oxide particles 1 from which the silica glass 3 has been removed, the crystal structure can be phase-shifted from the ⁇ phase to the ⁇ phase by external stimulation.
  • this characteristic can be used for optical switching, magnetic memory, charge storage type It can be applied to a memory, an optical information recording medium, and the like.

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PCT/JP2011/059344 2010-05-21 2011-04-15 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ Ceased WO2011145416A1 (ja)

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EP11783353.3A EP2573048B1 (en) 2010-05-21 2011-04-15 Process for producing titanium oxide particles
CN201180025163.XA CN102906026B (zh) 2010-05-21 2011-04-15 光信息记录媒体以及电荷蓄积型存储器
KR1020127033279A KR101834583B1 (ko) 2010-05-21 2011-04-15 산화티탄 입자, 그 제조 방법, 자기 메모리, 광 정보 기록 매체 및 전하 축적형 메모리
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111040473A (zh) * 2019-11-26 2020-04-21 广东盈骅新材料科技有限公司 亚氧化钛黑色颜料及其制备方法
CN115517535A (zh) * 2022-09-30 2022-12-27 武汉苏泊尔炊具有限公司 用于锅具的导磁材料、其制备方法和包括导磁材料的锅具

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JP6604370B2 (ja) * 2017-11-02 2019-11-13 堺化学工業株式会社 水酸化チタンの製造方法
US11830533B2 (en) * 2018-03-30 2023-11-28 Sony Corporation Method of producing magnetic powder and method of producing magnetic recording medium
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US12272476B2 (en) * 2020-10-26 2025-04-08 Tdk Corporation Photodetection element and receiver
CN116375079B (zh) * 2023-04-07 2025-05-27 上海大学 一种无还原剂快速制备β-Ti3O5的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224113A (ja) * 1990-12-26 1992-08-13 Osaka Titanium Co Ltd 蒸着用酸化チタンの製造方法
JP2003238156A (ja) * 2002-02-21 2003-08-27 Toho Titanium Co Ltd チタン酸リチウムの製造方法およびリチウムイオン電池ならびにその電極
JP2010024111A (ja) * 2008-07-23 2010-02-04 Toho Titanium Co Ltd 亜酸化チタンの製造方法
WO2010064575A1 (ja) * 2008-12-04 2010-06-10 国立大学法人東京大学 酸化チタン粒子、その製造方法、磁気メモリ及び電荷蓄積型メモリ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3509838B2 (ja) * 1996-12-16 2004-03-22 戸田工業株式会社 鉄を主成分とする金属磁性粒子粉末を使用している磁気記録媒体の非磁性下地層用酸化チタン粒子粉末、該酸化チタン粒子粉末を用いた非磁性下地層を有する磁気記録媒体の基体並びに該基体を用いた磁気記録媒体
DE10259246A1 (de) * 2002-12-17 2004-07-01 Merck Patent Gmbh Anorganische sphärische Absorptionspigmente
JP4288674B2 (ja) * 2003-09-25 2009-07-01 日立金属株式会社 磁性金属微粒子の製造方法および磁性金属微粒子
US20080112879A1 (en) * 2006-11-15 2008-05-15 Mccracken Colin G Production of high-purity titanium monoxide and capacitor production therefrom
CN101333003B (zh) * 2008-08-01 2010-06-09 上海特旺光电材料有限公司 五氧化三钛镀膜材料的制备方法
JP5736664B2 (ja) * 2010-04-30 2015-06-17 国立大学法人 東京大学 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224113A (ja) * 1990-12-26 1992-08-13 Osaka Titanium Co Ltd 蒸着用酸化チタンの製造方法
JP2003238156A (ja) * 2002-02-21 2003-08-27 Toho Titanium Co Ltd チタン酸リチウムの製造方法およびリチウムイオン電池ならびにその電極
JP2010024111A (ja) * 2008-07-23 2010-02-04 Toho Titanium Co Ltd 亜酸化チタンの製造方法
WO2010064575A1 (ja) * 2008-12-04 2010-06-10 国立大学法人東京大学 酸化チタン粒子、その製造方法、磁気メモリ及び電荷蓄積型メモリ

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
C.HAUF ET AL.: "Preparation of various titanium suboxide powders by reduction of Ti02 with silicon", JOURNAL OF MATERIALS SCIENCE, vol. 34, no. 6, 15 March 1999 (1999-03-15), pages 1287 - 1292, XP000822973 *
HITOSHI SATO ET AL., JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 75, no. 5, May 2006 (2006-05-01), pages 053702,1 - 4
M.ONODA: "Phase Transitions of Ti305", JOURNAL OF SOLID STATE CHEMISTRY, vol. 136, no. 1, 15 February 1998 (1998-02-15), pages 67 - 73, XP002674383 *
See also references of EP2573048A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111040473A (zh) * 2019-11-26 2020-04-21 广东盈骅新材料科技有限公司 亚氧化钛黑色颜料及其制备方法
CN111040473B (zh) * 2019-11-26 2021-02-23 广东盈骅新材料科技有限公司 亚氧化钛黑色颜料及其制备方法
CN115517535A (zh) * 2022-09-30 2022-12-27 武汉苏泊尔炊具有限公司 用于锅具的导磁材料、其制备方法和包括导磁材料的锅具

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