JP5733736B2 - 酸化チタン粒子の製造方法 - Google Patents

酸化チタン粒子の製造方法 Download PDF

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Publication number
JP5733736B2
JP5733736B2 JP2010117342A JP2010117342A JP5733736B2 JP 5733736 B2 JP5733736 B2 JP 5733736B2 JP 2010117342 A JP2010117342 A JP 2010117342A JP 2010117342 A JP2010117342 A JP 2010117342A JP 5733736 B2 JP5733736 B2 JP 5733736B2
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phase
titanium oxide
oxide particles
titanium
silica glass
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JP2010117342A
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Japanese (ja)
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JP2011241136A (ja
JP2011241136A5 (enExample
Inventor
慎一 大越
慎一 大越
裕子 所
裕子 所
史吉 箱江
史吉 箱江
由英 角渕
由英 角渕
橋本　和仁
和仁 橋本
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University of Tokyo NUC
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University of Tokyo NUC
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Priority to JP2010117342A priority Critical patent/JP5733736B2/ja
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Priority to EP11783353.3A priority patent/EP2573048B1/en
Priority to CN201180025163.XA priority patent/CN102906026B/zh
Priority to KR1020127033279A priority patent/KR101834583B1/ko
Priority to PCT/JP2011/059344 priority patent/WO2011145416A1/ja
Priority to US13/699,082 priority patent/US9079782B2/en
Publication of JP2011241136A publication Critical patent/JP2011241136A/ja
Publication of JP2011241136A5 publication Critical patent/JP2011241136A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C01G23/043—Titanium sub-oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
    • C09C1/3607—Titanium dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2010117342A 2010-05-21 2010-05-21 酸化チタン粒子の製造方法 Active JP5733736B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010117342A JP5733736B2 (ja) 2010-05-21 2010-05-21 酸化チタン粒子の製造方法
CN201180025163.XA CN102906026B (zh) 2010-05-21 2011-04-15 光信息记录媒体以及电荷蓄积型存储器
KR1020127033279A KR101834583B1 (ko) 2010-05-21 2011-04-15 산화티탄 입자, 그 제조 방법, 자기 메모리, 광 정보 기록 매체 및 전하 축적형 메모리
PCT/JP2011/059344 WO2011145416A1 (ja) 2010-05-21 2011-04-15 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ
EP11783353.3A EP2573048B1 (en) 2010-05-21 2011-04-15 Process for producing titanium oxide particles
US13/699,082 US9079782B2 (en) 2010-05-21 2011-04-15 Titanium oxide particles, process for producing same, magnetic memory, optical information recording medium, and charge accumulation type memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010117342A JP5733736B2 (ja) 2010-05-21 2010-05-21 酸化チタン粒子の製造方法

Publications (3)

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JP2011241136A JP2011241136A (ja) 2011-12-01
JP2011241136A5 JP2011241136A5 (enExample) 2013-05-23
JP5733736B2 true JP5733736B2 (ja) 2015-06-10

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JP2010117342A Active JP5733736B2 (ja) 2010-05-21 2010-05-21 酸化チタン粒子の製造方法

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US (1) US9079782B2 (enExample)
EP (1) EP2573048B1 (enExample)
JP (1) JP5733736B2 (enExample)
KR (1) KR101834583B1 (enExample)
CN (1) CN102906026B (enExample)
WO (1) WO2011145416A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015050269A1 (ja) * 2013-10-04 2015-04-09 国立大学法人東京大学 蓄放熱材および蓄放熱システム
CN105062149B (zh) * 2015-07-20 2017-08-08 苏州宇希新材料科技有限公司 一种纳米二氧化钛的改性方法
CN105800683B (zh) * 2016-02-24 2017-06-13 北京交通大学 一种一维阵列式TiOx纳米材料的制备方法
WO2018079363A1 (ja) * 2016-10-25 2018-05-03 パナソニックＩｐマネジメント株式会社 圧力センサ
JP6604370B2 (ja) * 2017-11-02 2019-11-13 堺化学工業株式会社 水酸化チタンの製造方法
WO2019189468A1 (ja) * 2018-03-30 2019-10-03 ソニー株式会社 磁性粉末の製造方法および磁気記録媒体の製造方法
CN110071122B (zh) * 2019-04-18 2021-01-15 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法、显示面板
CN111040473B (zh) * 2019-11-26 2021-02-23 广东盈骅新材料科技有限公司 亚氧化钛黑色颜料及其制备方法
CN114497268B (zh) * 2020-10-26 2025-10-21 Tdk株式会社 光检测元件及接收装置
CN115517535B (zh) * 2022-09-30 2025-11-07 武汉苏泊尔炊具有限公司 用于锅具的导磁材料、其制备方法和包括导磁材料的锅具
CN116375079B (zh) * 2023-04-07 2025-05-27 上海大学 一种无还原剂快速制备β-Ti3O5的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224113A (ja) * 1990-12-26 1992-08-13 Osaka Titanium Co Ltd 蒸着用酸化チタンの製造方法
JP3509838B2 (ja) * 1996-12-16 2004-03-22 戸田工業株式会社 鉄を主成分とする金属磁性粒子粉末を使用している磁気記録媒体の非磁性下地層用酸化チタン粒子粉末、該酸化チタン粒子粉末を用いた非磁性下地層を有する磁気記録媒体の基体並びに該基体を用いた磁気記録媒体
JP2003238156A (ja) * 2002-02-21 2003-08-27 Toho Titanium Co Ltd チタン酸リチウムの製造方法およびリチウムイオン電池ならびにその電極
DE10259246A1 (de) * 2002-12-17 2004-07-01 Merck Patent Gmbh Anorganische sphärische Absorptionspigmente
JP4288674B2 (ja) * 2003-09-25 2009-07-01 日立金属株式会社 磁性金属微粒子の製造方法および磁性金属微粒子
US20080112879A1 (en) * 2006-11-15 2008-05-15 Mccracken Colin G Production of high-purity titanium monoxide and capacitor production therefrom
JP5301211B2 (ja) * 2008-07-23 2013-09-25 東邦チタニウム株式会社 亜酸化チタンの製造方法
CN101333003B (zh) * 2008-08-01 2010-06-09 上海特旺光电材料有限公司 五氧化三钛镀膜材料的制备方法
WO2010064575A1 (ja) * 2008-12-04 2010-06-10 国立大学法人東京大学 酸化チタン粒子、その製造方法、磁気メモリ及び電荷蓄積型メモリ
JP5736664B2 (ja) * 2010-04-30 2015-06-17 国立大学法人 東京大学 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ

Also Published As

Publication number Publication date
EP2573048A4 (en) 2016-03-02
WO2011145416A1 (ja) 2011-11-24
JP2011241136A (ja) 2011-12-01
EP2573048A1 (en) 2013-03-27
US9079782B2 (en) 2015-07-14
EP2573048B1 (en) 2019-03-27
KR20130109978A (ko) 2013-10-08
KR101834583B1 (ko) 2018-03-05
CN102906026B (zh) 2014-09-10
CN102906026A (zh) 2013-01-30
US20130105723A1 (en) 2013-05-02

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